WO2022164073A1 - 산화물 절연 피복된 본딩 와이어를 포함하는 반도체 패키지, 이를 포함하는 전자 시스템, 및 이를 포함하는 배터리 모듈 - Google Patents
산화물 절연 피복된 본딩 와이어를 포함하는 반도체 패키지, 이를 포함하는 전자 시스템, 및 이를 포함하는 배터리 모듈 Download PDFInfo
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- WO2022164073A1 WO2022164073A1 PCT/KR2022/000317 KR2022000317W WO2022164073A1 WO 2022164073 A1 WO2022164073 A1 WO 2022164073A1 KR 2022000317 W KR2022000317 W KR 2022000317W WO 2022164073 A1 WO2022164073 A1 WO 2022164073A1
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- Prior art keywords
- bonding wire
- oxide
- fragments
- insulating coating
- semiconductor chip
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 238000009413 insulation Methods 0.000 title abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 59
- 238000000576 coating method Methods 0.000 claims abstract description 59
- 239000012634 fragment Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 20
- 229910000765 intermetallic Inorganic materials 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 10
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 9
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 9
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 10
- 230000009977 dual effect Effects 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- SEEZIOZEUUMJME-FOWTUZBSSA-N cannabigerolic acid Chemical compound CCCCCC1=CC(O)=C(C\C=C(/C)CCC=C(C)C)C(O)=C1C(O)=O SEEZIOZEUUMJME-FOWTUZBSSA-N 0.000 description 1
- SEEZIOZEUUMJME-UHFFFAOYSA-N cannabinerolic acid Natural products CCCCCC1=CC(O)=C(CC=C(C)CCC=C(C)C)C(O)=C1C(O)=O SEEZIOZEUUMJME-UHFFFAOYSA-N 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000002161 passivation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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Definitions
- the technical idea of the present invention relates to a semiconductor package, and more particularly, to a semiconductor package including a bonding wire coated with oxide insulation, an electronic system including the same, and a battery module including the same.
- a bonding pad of a wiring board for example, a printed circuit board or a lead frame
- a chip pad of a semiconductor chip are electrically connected by bonding with a bonding wire made of metal.
- This process is called a wire bonding process.
- the wire bonding process as the chip pad of the semiconductor chip is miniaturized and a stack package for stacking multi-layered semiconductor chips is applied, a short circuit phenomenon in which the metal wires are attached to each other occurs. Therefore, there is a demand for a bonding wire for preventing such a short circuit.
- An object of the present invention is to provide a semiconductor package including a bonding wire coated with oxide insulation, an electronic system including the same, and a battery module including the same.
- a semiconductor package including a bonding wire coated with an oxide insulation, an electronic system including the same, and a battery module including the same.
- the semiconductor package includes: a substrate; a semiconductor chip mounted on the substrate; a metal core part electrically connecting the substrate and the semiconductor chip and positioned therein; and an oxide insulating coating part covering the metal core part; and first fragments positioned at the first portion where the substrate and the bonding wire are connected, and made of the same material as the oxide insulating coating portion of the bonding wire.
- the first fragments may be composed of fragments of the oxide insulating coating portion destroyed while the bonding wire is bonded.
- it further includes an intermetallic compound layer formed in the first portion to which the substrate and the bonding wire are connected, and at least a portion of the first fragments may be located in the intermetallic compound layer.
- second fragments are located in the second portion where the semiconductor chip and the bonding wire are connected, and made of the same material as the oxide insulating coating portion of the bonding wire; may include.
- the second fragments may be composed of fragments of the oxide insulating coating portion destroyed during bonding of the bonding wire.
- the oxide insulating coating part may include at least one of aluminum oxide, titanium oxide, zirconium oxide, and hafnium oxide, and the metal core part is gold, silver, copper, aluminum, tin, palladium, and alloys thereof.
- the oxide insulating coating portion may have a thickness in the range of 2 nm to 50 nm.
- the metal core part may be configured by one conductive wire, by including a plurality of coaxial conductive wires, or by twisting a plurality of conductive wires.
- the semiconductor package includes: a substrate; first and second semiconductor chips mounted on the substrate; a metal core part electrically connecting the first semiconductor chip and the second semiconductor chip and positioned therein; and an oxide insulating coating part covering the metal core part; and third fragments positioned at a portion where the first semiconductor chip and the first bonding wire are connected and made of the same material as the oxide insulating coating portion of the first bonding wire.
- the second semiconductor chip and the first bonding wire is located in the connection portion, the fourth fragments made of the same material as the oxide insulating coating portion of the first bonding wire; a second bonding wire electrically connecting one of the first semiconductor chip and the second semiconductor chip to the substrate; and fifth fragments positioned at a portion where the substrate and the second bonding wire are connected, and made of the same material as the oxide insulating coating portion of the second bonding wire.
- a first battery a second battery electrically connected to the first battery; a metal core part electrically connecting the first battery and the second battery, and positioned therein; and an oxide insulating coating part covering the metal core part; and fragments located at a portion where the first battery or the second battery and the bonding wire are connected, and made of the same material as the oxide insulating coating portion of the bonding wire.
- the semiconductor package can prevent a short circuit between the bonding wires by electrically connecting between the substrate and the semiconductor chip, or between the semiconductor chip and the semiconductor chip using an oxide-insulated bonding wire.
- bonding wires can be integrated with high density, and bonding wires having a long length between chips can be used.
- the bonding wire is coated with oxide insulation, it is possible to prevent a short circuit, thereby reducing the diameter of the bonding wire.
- the oxide insulating coating portion of the bonding wire is composed of at least any one of aluminum oxide, titanium oxide, zirconium oxide, and hafnium oxide, it has excellent insulation, excellent dielectric strength, and an intermetallic compound with a material constituting the metal core. Since it does not form, the stability is high, the bonding property of the bonding wire is excellent, and the protection property is excellent.
- the first fragments or the second fragments formed from the oxide insulating coating of the bonding wire are composed of a metal oxide such as at least one of aluminum oxide, titanium oxide, zirconium oxide, and hafnium oxide, adhesion of a substrate or a semiconductor chip
- a metal oxide such as at least one of aluminum oxide, titanium oxide, zirconium oxide, and hafnium oxide
- adhesion of a substrate or a semiconductor chip By increasing the roughness of the surface, it is possible to improve adhesion with the bonding wire.
- the bonding force between the metal and at least one of aluminum oxide, titanium oxide, zirconium oxide, and hafnium oxide is greater than the bonding by the intermetallic compound, in the case of stitch bonding, the adhesive force may be further increased.
- FIG. 1 is a schematic diagram showing a bonding wire according to an embodiment of the present invention.
- FIG. 2 is a schematic diagram showing a metal core portion of a bonding wire according to an embodiment of the present invention.
- FIG 3 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.
- 4 to 6 are cross-sectional views illustrating connection states of bonding wires in a semiconductor package according to an embodiment of the present invention.
- FIG. 7 is a schematic diagram illustrating a bonding process of a bonding wire in a semiconductor package according to an embodiment of the present invention.
- FIG. 8 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.
- FIG. 9 is a cross-sectional view illustrating a connection state of a bonding wire in a semiconductor package according to an embodiment of the present invention.
- FIG. 10 is a block diagram of an electronic system according to an embodiment of the present invention.
- FIG. 11 is a schematic diagram illustrating a battery module according to an embodiment of the present invention.
- the conventional bonding wire is formed using only metals such as gold, silver, copper or aluminum, or according to the purpose, gold is coated on a silver core, aluminum is coated on a gold core, copper is coated on a gold core, or copper is coated with copper. It was formed by coating pallanium or by coating aluminum on copper.
- the diameter of the bonding wire is reduced, and the spacing between the bonding wires is also reduced. Accordingly, interest in forming an insulating layer on the surface of the bonding wire is increasing.
- a bonding wire coated with oxide insulation and a semiconductor package including the same.
- FIG. 1 is a schematic diagram showing a bonding wire 130 according to an embodiment of the present invention.
- the bonding wire 130 includes a metal core part 132 positioned therein and an oxide insulating coating part 134 covering the metal core part 132 .
- the metal core portion 132 may have a diameter in the range of, for example, 0.1 mm to 5.0 mm, for example, it may have a diameter in the range of 0.1 mm to 1.0 mm.
- the metal core part 132 may include a metal, for example, gold (Au), silver (Ag), copper (Cu), aluminum (Al), tin (Sn), palladium (Pd), and these alloys may be included.
- the metal core part 132 may have various cross-sectional shapes, for example, a circular shape, an oval shape, a semicircle shape, a triangular shape, a square shape, or the like.
- the oxide insulating coating part 134 may perform a function of insulating the metal core part 132 from the outside, and may also perform a passivation function of protecting the metal core part 132 .
- the oxide insulating coating part 134 may completely cover the metal core part 132 .
- the oxide insulating coating portion 134 may have, for example, a thickness in a range of 2 nm to 100 nm, and may have a thickness in a range of, for example, 2 nm to 50 nm. It is preferable that the thickness of the oxide insulating coating portion 134 increases as the applied voltage increases.
- the oxide insulating coating portion 134 may include an insulating material, for example, an oxide, for example, aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ) , and hafnium oxide (HfO 2 ) It may include at least one of.
- an oxide for example, aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ) , and hafnium oxide (HfO 2 )
- the oxide insulating coating part 134 is formed with at least one of aluminum oxide, titanium oxide, zirconium oxide, and hafnium oxide, the insulating property is excellent, the dielectric strength is excellent, and the metal core part 132 is constituted. Since it does not form an intermetallic compound with a material to be used, the stability is high, the bonding property of the bonding wire is excellent, and the protection property is excellent.
- the oxide insulating coating portion 134 may be formed using physical
- FIG. 2 is a schematic diagram showing a metal core portion 132 of the bonding wire 130 according to an embodiment of the present invention.
- the metal core part 132 may include a metal core part 132a formed of one conductive wire, a metal core part 132b including a plurality of coaxial wires, or a metal formed by twisting a plurality of conductive wires. It may include a core part 132c and the like.
- FIG 3 is a cross-sectional view illustrating a semiconductor package 100 according to an embodiment of the present invention.
- 4 to 6 are cross-sectional views illustrating connection states of bonding wires in the semiconductor package 100 according to an embodiment of the present invention.
- the semiconductor package 100 includes a substrate 110 , a semiconductor chip 120 , a bonding wire 130 , and first fragments 140 .
- the semiconductor package 100 may include various semiconductor packages using bonding wires, for example, a system-in-package (SIP), a small outline package (SOP), a quad flat package (QFP), and a small outline (SOJ).
- SIP system-in-package
- SOP small outline package
- QFP quad flat package
- SOJ small outline
- J-Band Package PLCC(Plastic Leaded Chip Carrier), JLCC(J Leaded Chip Carrier), MSP(Mini Square Package), LCC(Leadless Chip Carrier), DIP(Dual In-Line Package), SILP(Single In- Line Package), ZIP(Zigzag In-Line Package), S-DIP(Shrink Dual In-Line Package), SK-DIP(Skinny Dual In-Line Package), PGA(Pin Grid Array), CBGA(Ceramic Ball Grid Array) ), CPGA (Ceramic Pin Grid Array), TCP (Tape Carrier Package), LCC (Leadless Chip Package), CO
- the substrate 110 may include various substrates, and may include, for example, a printed circuit board, a lead frame, a flexible printed circuit board, an LED metal-core printed circuit board (MCPCB), or a battery module electrode.
- a printed circuit board a lead frame
- a flexible printed circuit board a flexible printed circuit board
- an LED metal-core printed circuit board MCPCB
- a battery module electrode a battery module electrode
- the semiconductor chip 120 may be mounted on the substrate 110 .
- the semiconductor chip 120 may be mounted on the substrate 110 in various ways.
- the semiconductor chip 120 may include various semiconductor chips.
- the semiconductor chip 120 may be, for example, a memory semiconductor chip.
- the memory semiconductor chip is, for example, a volatile memory semiconductor chip such as dynamic random access memory (DRAM) or static random access memory (SRAM), phase-change random access memory (PRAM), magnetic random access memory (MRAM), It may be a non-volatile memory semiconductor chip such as Ferroelectric Random Access Memory (FeRAM) or Resistive Random Access Memory (RRAM).
- the semiconductor chip 120 may be, for example, a logic semiconductor chip such as a central processing unit (CPU, MPU), an application processor (AP), a graphics processing semiconductor chip (GPU), an image sensor semiconductor chip, or the like.
- the bonding wire 130 may electrically connect the substrate 110 and the semiconductor chip 120 .
- the bonding wire 130 may include a metal core part 132 positioned therein and an oxide insulating coating part 134 covering the metal core part 132 .
- the substrate 110 and the bonding wire 130 are connected in the first part 142 .
- the first fragments 140 are positioned in the first portion 142 , and the first fragments 140 may be made of the same material as the oxide insulating coating portion 134 of the bonding wire 130 .
- the first fragments 140 may be composed of fragments of the oxide insulating coating portion 134 that is destroyed while the bonding wire 130 is bonded.
- the substrate 110 and the bonding wire 130 are connected in the first part 142 .
- the substrate 110 and the bonding wire 130 may further include an intermetallic compound layer 144 formed in the first portion 142 is connected.
- at least a portion of the first fragments 140 may be located in the intermetallic compound layer 144 .
- at least a portion of the first fragments 140 may be located at the interface between the bonding wire 130 and the intermetallic compound layer 144 , or at the interface between the substrate 110 and the intermetallic compound layer 144 .
- the intermetallic compound layer 144 may be formed by alloying and combining a material constituting the pad of the substrate 110 and a material constituting the bonding wire 130 in contact with the pad.
- the semiconductor chip 120 and the bonding wire 130 are connected in the second part 152 .
- the second fragments 150 are positioned in the second portion 152 , and the second fragments 150 may be made of the same material as the oxide insulating coating portion 134 of the bonding wire 130 .
- the second fragments 150 may be composed of fragments of the oxide insulating coating portion 134 destroyed while the bonding wire 130 is bonded.
- an intermetallic compound layer such as the above-described intermetallic compound layer 144 may be formed on the second portion 152 , and at least a portion of the second fragments 150 may be located in the intermetallic compound layer.
- first fragments 140 or second fragments 150 are composed of a metal oxide such as at least one of aluminum oxide, titanium oxide, zirconium oxide, and hafnium oxide, the substrate 110 or the semiconductor chip ( By increasing the roughness of the surface of the 120 , it is possible to improve adhesion with the bonding wire 130 .
- the bonding strength between the metal and the metal oxide such as at least one of aluminum oxide, titanium oxide, zirconium oxide, and hafnium oxide is greater than the bonding strength by the intermetallic oxide, the adhesive strength may be increased.
- FIG. 7 is a schematic diagram illustrating a bonding process of a bonding wire in a semiconductor package according to an embodiment of the present invention.
- a bonding wire 130 including a metal core part 132 and an oxide insulating coating part 134 is provided. Then, when one end of the bonding wire 130 is heated, the metal core part 132 is heated by heating to form a liquid metal 136 , and thus the oxide insulating coating part 134 is subjected to pressure in the outward direction. do. Such heating may be accomplished using an electrical spark or laser. Accordingly, the insulating coating portion 134 is destroyed by the pressure. Subsequently, the fragments 140 and 150 of the destroyed insulating coating portion 134 are mixed with the liquid metal 136 . Accordingly, the fragments 140 and 150 remain in the first portion 142 of the substrate 110 or the second portion 152 of the semiconductor chip 120 .
- the bonding wire may be applied to a case of connecting a semiconductor chip and a semiconductor chip, and will be described below.
- FIG. 8 is a cross-sectional view illustrating a semiconductor package 100a according to an embodiment of the present invention.
- FIG. 9 is a cross-sectional view illustrating a connection state of bonding wires in a semiconductor package 100a according to an embodiment of the present invention.
- regions indicated by dotted lines indicate regions in which the semiconductor chip and the bonding wire are connected or regions in which the substrate and the bonding wire are connected.
- the semiconductor package 100a may include a substrate 110 ; first and second semiconductor chips 120a and 120b mounted on the substrate 110; a metal core that electrically connects the first semiconductor chip 120a and the second semiconductor chip 120b and is positioned therein; And a first bonding wire (130a) comprising a; and an oxide insulating coating portion covering the metal core portion; and third fragments ( 160); may include.
- the fourth fragments are located in the fourth portion 172 to which the second semiconductor chip 120b and the first bonding wire 130a are connected, and made of the same material as the oxide insulating coating portion of the first bonding wire 130a. (170); may include.
- second bonding wires 130b and 130c electrically connecting one of the first semiconductor chip 120a and the second semiconductor chip 120b to the substrate 110; and fifth fragments located at the portion where the substrate 110 and the second bonding wires 130b and 130c are connected, and made of the same material as the oxide insulating coating portion of the second bonding wires 130b and 130c.
- the fifth fragments may be the same as the above-described first fragments 140 or second fragments 150 .
- an intermetallic compound layer such as the above-described intermetallic compound layer 144 may be formed on the third portion 162 and the fourth portion 172 , and at least a portion of the third fragments 160 and At least a portion of the fourth fragments 170 may be located in the intermetallic compound layer, respectively.
- the substrate 110 is illustrated as one substrate, this is exemplary and the substrate 110 is composed of two separate substrates, and the first semiconductor chip 120a and the second semiconductor chip 120b are separated. A case in which each of the substrates is positioned is also included in the technical spirit of the present invention.
- a short circuit between bonding wires is prevented by electrically connecting between a substrate and a semiconductor chip or between a semiconductor chip and a semiconductor chip using a bonding wire coated with oxide insulation.
- FIG. 10 is a block diagram of an electronic system according to an embodiment of the present invention.
- the electronic system 1000 includes a controller 1010 , an input/output device (I/O) 1020 , a memory 1030 , and an interface 1040 , each of which is via a bus 1050 . are interconnected.
- the controller 1010 may include at least one of a microprocessor, a digital signal processor, or a processing device similar thereto.
- the input/output device 1020 may include at least one of a keypad, a keyboard, and a display.
- Memory 1030 may be used to store instructions executed by controller 1010 .
- the memory 1030 may be used to store user data.
- the electronic system 1000 includes the above-described semiconductor package and at least one of the semiconductor packages manufactured by various manufacturing methods modified and changed within the scope of the technical spirit of the present invention.
- FIG. 11 is a schematic diagram illustrating a battery module 200 according to an embodiment of the present invention.
- the battery module 200 includes a first battery 210 ; a second battery 220 electrically connected to the first battery 210; a metal core that electrically connects the first battery 210 and the second battery 220 and is positioned therein; and a bonding wire 130 including an oxide insulating coating part covering the metal core part; and fragments formed of the same material as the oxide insulating coating portion of the bonding wire 130 located at a portion where the first battery 210 or the second battery 220 and the bonding wire 130 are connected.
- the metal core part may be substantially the same as the above-described metal core part 132 .
- the oxide insulating coating part may be substantially the same as the oxide insulating coating part 134 described above.
- the fragments may be substantially the same as the first fragments 140 described above.
- the bonding wire according to the technical idea of the present invention may be applied to a wire inside a motor of an electric vehicle, and may be applied to various wirings.
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Abstract
Description
Claims (12)
- 기판;상기 기판 상에 탑재된 반도체 칩;상기 기판과 상기 반도체 칩을 전기적으로 연결하고, 내부에 위치하는 금속 코어부; 및 상기 금속 코어부를 피복하는 산화물 절연 피복부;를 포함하는 본딩 와이어; 및상기 기판과 상기 본딩 와이어가 연결된 제1 부분에 위치하고, 상기 본딩 와이어의 상기 산화물 절연 피복부와 동일한 물질로 이루어진 제1 파편들;을 포함하고,상기 제1 파편들은 상기 본딩 와이어가 본딩되는 과정에서 상기 본딩 와이어의 가열에 의하여 상기 금속 코어부가 가열되어 형성된 액상 금속에 의한 압력에 의하여 파괴된 상기 산화물 절연 피복부의 파편으로 구성되고,상기 본딩 와이어는 상기 산화물 절연 피복부가 상기 금속 코어부의 길이 방향을 따라서 단부까지 피복된 상태에서 상기 본딩 와이어의 단부가 가열되어 상기 액상 금속 및 상기 제1 파편들을 포함하는 본딩 부분이 형성된 상태로 상기 제1 부분에서 상기 기판에 연결되는,반도체 패키지.
- 제 1 항에 있어서,상기 산화물 절연 피복부는 알루미늄 산화물, 티타늄 산화물, 지르코늄 산화물, 및 하프늄 산화물 중 적어도 어느 하나와 같은 금속 산화물을 포함하고, 상기 금속 산화물은 상기 금속 코어부 상에 원자층 증착법(ALD)을 이용하여 형성되는,반도체 패키지.
- 제 2 항에 있어서,상기 기판과 상기 본딩 와이어가 연결된 상기 제1 부분 내에 형성된 금속간화합물층을 더 포함하고,상기 제1 파편들의 적어도 일부는 상기 금속간화합물층 내에 위치하는,반도체 패키지.
- 제 1 항에 있어서,상기 반도체 칩과 상기 본딩 와이어가 연결된 제2 부분에 위치하고, 상기 본딩 와이어의 상기 산화물 절연 피복부와 동일한 물질로 이루어진 제2 파편들;을 포함하는,반도체 패키지.
- 제 3 항에 있어서,상기 제2 파편들은 상기 본딩 와이어가 본딩되는 과정에서 파괴된 상기 산화물 절연 피복부의 파편으로 구성된,반도체 패키지.
- 제 1 항에 있어서,상기 금속 코어부는 금, 은, 구리, 알루미늄, 팔라듐, 및 이들의 합금을 포함하는,반도체 패키지.
- 제 1 항에 있어서,상기 산화물 절연 피복부는 10 nm 내지 20 nm 범위의 두께를 가지는,반도체 패키지.
- 제 1 항에 있어서,상기 금속 코어부는, 하나의 도선으로 구성되거나, 복수의 동축 도선들을 포함하여 구성되거나, 또는 복수의 도선들이 꼬여져 구성된,반도체 패키지.
- 기판;상기 기판 상에 탑재된 제1 및 제2 반도체 칩들;상기 제1 반도체 칩과 상기 제2 반도체 칩을 전기적으로 연결하고, 내부에 위치하는 금속 코어부; 및 상기 금속 코어부를 피복하는 산화물 절연 피복부;를 포함하는 제1 본딩 와이어; 및상기 제1 반도체 칩과 상기 제1 본딩 와이어가 연결된 부분에 위치하고, 상기 제1 본딩 와이어의 상기 산화물 절연 피복부와 동일한 물질로 이루어진 제3 파편들;을 포함하고상기 제3 파편들은 상기 제1 본딩 와이어가 본딩되는 과정에서 상기 제1 본딩 와이어의 가열에 의하여 상기 금속 코어부가 가열되어 형성된 액상 금속에 의한 압력에 의하여 파괴된 상기 산화물 절연 피복부의 파편으로 구성되고,상기 제1 본딩 와이어는 상기 산화물 절연 피복부가 상기 금속 코어부의 길이 방향을 따라서 단부까지 피복된 상태에서 상기 제1 본딩 와이어의 단부가 가열되어 상기 액상 금속 및 상기 제3 파편들을 포함하는 본딩 부분이 형성된 상태로 상기 제1 반도체 칩에 연결되는,반도체 패키지.
- 제 9 항에 있어서,상기 산화물 절연 피복부는 알루미늄 산화물, 티타늄 산화물, 지르코늄 산화물, 및 하프늄 산화물 중 적어도 어느 하나와 같은 금속 산화물을 포함하고, 상기 금속 산화물은 상기 금속 코어부 상에 원자층 증착법(ALD)을 이용하여 형성되는,반도체 패키지.
- 제 10 항에 있어서,상기 제1 반도체 칩과 상기 본딩 와이어가 연결된 부분 내에 형성된 금속간화합물층을 더 포함하고,상기 제3 파편들의 적어도 일부는 상기 금속간화합물층 내에 위치하는,반도체 패키지.
- 제 9 항에 있어서,상기 제2 반도체 칩과 상기 제1 본딩 와이어가 연결된 부분에 위치하고, 상기 제1 본딩 와이어의 상기 산화물 절연 피복부와 동일한 물질로 이루어진 제4 파편들;상기 제1 반도체 칩 및 상기 제2 반도체 칩 중 어느 하나와 상기 기판을 전기적으로 연결하는 제2 본딩 와이어; 및상기 기판과 상기 제2 본딩 와이어가 연결된 부분에 위치하고, 상기 제2 본딩 와이어의 상기 산화물 절연 피복부와 동일한 물질로 이루어진 제5 파편들;을 더 포함하는,반도체 패키지.
Priority Applications (4)
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US18/274,369 US20240088088A1 (en) | 2021-02-01 | 2022-01-07 | Semiconductor package including bonding wire coated with oxide insulation, electronic system including same, and battery module including same |
DE112022000902.0T DE112022000902T5 (de) | 2021-02-01 | 2022-01-07 | Halbleitergehäuse, das mit oxidisolation überzogenen bonddraht einschliesst, elektronisches system, welches dasselbe einschliesst, und batteriemodul, welches dasselbe einschliesst |
JP2023546103A JP2024504804A (ja) | 2021-02-01 | 2022-01-07 | 酸化物絶縁被覆されたボンディングワイヤを含む半導体パッケージ、それを含む電子システム、及びそれを含むバッテリーモジュール |
CN202280010643.7A CN116724390A (zh) | 2021-02-01 | 2022-01-07 | 包括覆盖有绝缘氧化物的接合线的半导体封装件、包括该封装件的电子系统及包括该系统的电池模块 |
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KR1020210014291A KR102323557B1 (ko) | 2021-02-01 | 2021-02-01 | 산화물 절연 피복된 본딩 와이어를 포함하는 반도체 패키지, 이를 포함하는 전자 시스템, 및 이를 포함하는 배터리 모듈 |
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2021
- 2021-02-01 KR KR1020210014291A patent/KR102323557B1/ko active IP Right Grant
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2022
- 2022-01-07 US US18/274,369 patent/US20240088088A1/en active Pending
- 2022-01-07 WO PCT/KR2022/000317 patent/WO2022164073A1/ko active Application Filing
- 2022-01-07 DE DE112022000902.0T patent/DE112022000902T5/de active Pending
- 2022-01-07 CN CN202280010643.7A patent/CN116724390A/zh active Pending
- 2022-01-07 JP JP2023546103A patent/JP2024504804A/ja active Pending
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JP2013118310A (ja) * | 2011-12-05 | 2013-06-13 | Jjtech Co Ltd | 半導体装置 |
KR102323557B1 (ko) * | 2021-02-01 | 2021-11-08 | 박수재 | 산화물 절연 피복된 본딩 와이어를 포함하는 반도체 패키지, 이를 포함하는 전자 시스템, 및 이를 포함하는 배터리 모듈 |
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KR102323557B9 (ko) | 2024-02-08 |
DE112022000902T5 (de) | 2023-11-16 |
JP2024504804A (ja) | 2024-02-01 |
CN116724390A (zh) | 2023-09-08 |
US20240088088A1 (en) | 2024-03-14 |
KR102323557B1 (ko) | 2021-11-08 |
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