WO2022163806A1 - Procédé de mesure de température, dispositif de mesure de température et procédé de formation de film mince - Google Patents

Procédé de mesure de température, dispositif de mesure de température et procédé de formation de film mince Download PDF

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Publication number
WO2022163806A1
WO2022163806A1 PCT/JP2022/003293 JP2022003293W WO2022163806A1 WO 2022163806 A1 WO2022163806 A1 WO 2022163806A1 JP 2022003293 W JP2022003293 W JP 2022003293W WO 2022163806 A1 WO2022163806 A1 WO 2022163806A1
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WO
WIPO (PCT)
Prior art keywords
temperature
substrate
phase change
film
temperature measurement
Prior art date
Application number
PCT/JP2022/003293
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English (en)
Japanese (ja)
Inventor
健一 石橋
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Publication of WO2022163806A1 publication Critical patent/WO2022163806A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C51/00—Measuring, gauging, indicating, counting, or marking devices specially adapted for use in the production or manipulation of material in accordance with subclasses B21B - B21F
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

Dans le procédé de mesure de température de la présente invention, un substrat de mesure de température, sur lequel est stratifié un film à changement de phase dont la grandeur physique change en raison d'un changement de la température d'arrivée, est soumis à un traitement thermique, après que le substrat de mesure de température a été soumis à un traitement thermique, la grandeur physique du film à changement de phase est mesurée pour obtenir une grandeur physique mesurée, et la température et la distribution de température du substrat de mesure de température dans le traitement thermique du substrat de mesure de température sont obtenues sur la base de la grandeur physique mesurée et d'une relation prédéterminée entre la grandeur physique et la température.
PCT/JP2022/003293 2021-02-01 2022-01-28 Procédé de mesure de température, dispositif de mesure de température et procédé de formation de film mince WO2022163806A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-014575 2021-02-01
JP2021014575 2021-02-01

Publications (1)

Publication Number Publication Date
WO2022163806A1 true WO2022163806A1 (fr) 2022-08-04

Family

ID=82653505

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/003293 WO2022163806A1 (fr) 2021-02-01 2022-01-28 Procédé de mesure de température, dispositif de mesure de température et procédé de formation de film mince

Country Status (2)

Country Link
TW (1) TW202240136A (fr)
WO (1) WO2022163806A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208524A (ja) * 1999-01-13 2000-07-28 Tokyo Electron Ltd 温度モニタ用半導体ウエハの温度測定方法
JP2002289614A (ja) * 2001-03-26 2002-10-04 Nec Corp 誘電体膜の評価方法、熱処理装置の温度校正方法及び半導体記憶装置の製造方法
JP2003022981A (ja) * 2001-05-31 2003-01-24 Chartered Semiconductor Mfg Ltd 高融点金属シリサイド化相転移温度点を用いてｒｔｐ低温操作を制御及び／又は較正する方法
JP2005333032A (ja) * 2004-05-20 2005-12-02 Tokyo Electron Ltd モニタ用被処理体の温度換算関数の形成方法、温度分布の算出方法及び枚葉式の熱処理装置
JP2007046091A (ja) * 2005-08-09 2007-02-22 Canon Inc 真空容器内の温度制御装置および薄膜形成方法
US20100254425A1 (en) * 2007-06-29 2010-10-07 International Business Machines Corporation Phase change material based temperature sensor
JP2012094875A (ja) * 2005-04-01 2012-05-17 Lam Research Corporation 半導体用途での正確な温度測定

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208524A (ja) * 1999-01-13 2000-07-28 Tokyo Electron Ltd 温度モニタ用半導体ウエハの温度測定方法
JP2002289614A (ja) * 2001-03-26 2002-10-04 Nec Corp 誘電体膜の評価方法、熱処理装置の温度校正方法及び半導体記憶装置の製造方法
JP2003022981A (ja) * 2001-05-31 2003-01-24 Chartered Semiconductor Mfg Ltd 高融点金属シリサイド化相転移温度点を用いてｒｔｐ低温操作を制御及び／又は較正する方法
JP2005333032A (ja) * 2004-05-20 2005-12-02 Tokyo Electron Ltd モニタ用被処理体の温度換算関数の形成方法、温度分布の算出方法及び枚葉式の熱処理装置
JP2012094875A (ja) * 2005-04-01 2012-05-17 Lam Research Corporation 半導体用途での正確な温度測定
JP2007046091A (ja) * 2005-08-09 2007-02-22 Canon Inc 真空容器内の温度制御装置および薄膜形成方法
US20100254425A1 (en) * 2007-06-29 2010-10-07 International Business Machines Corporation Phase change material based temperature sensor

Also Published As

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TW202240136A (zh) 2022-10-16

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