WO2022162489A1 - 表示装置及びその作製方法 - Google Patents

表示装置及びその作製方法 Download PDF

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Publication number
WO2022162489A1
WO2022162489A1 PCT/IB2022/050332 IB2022050332W WO2022162489A1 WO 2022162489 A1 WO2022162489 A1 WO 2022162489A1 IB 2022050332 W IB2022050332 W IB 2022050332W WO 2022162489 A1 WO2022162489 A1 WO 2022162489A1
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Prior art keywords
anode
layer
light
region
partition
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Ceased
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English (en)
French (fr)
Japanese (ja)
Inventor
山崎舜平
瀬尾哲史
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to US18/271,582 priority Critical patent/US20240065038A1/en
Priority to JP2022577802A priority patent/JP7808560B2/ja
Publication of WO2022162489A1 publication Critical patent/WO2022162489A1/ja
Anticipated expiration legal-status Critical
Priority to JP2026006824A priority patent/JP2026065167A/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • One embodiment of the present invention relates to a display device and a manufacturing method thereof.
  • a technical field of one embodiment of the invention disclosed in this specification and the like relates to a product, a method, or a manufacturing method.
  • one aspect of the invention relates to a process, machine, manufacture, or composition of matter.
  • Examples of more specific technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, and memory devices. These manufacturing methods can also be given as an example.
  • FIG. 3A of Japanese Patent Application Laid-Open No. 2002-200000 describes how a solution is dropped onto regions in which each pixel is divided by an insulator, and shows a pool of liquid immediately after dropping. Since the solvent evaporates in such a liquid pool, it is disclosed in the above-mentioned Patent Document 1 that the baking process can be made unnecessary by using the coating process.
  • one embodiment of the present invention provides a structure of a display device formed by a wet method such as an inkjet method, in which liquid pools are reduced, and a manufacturing method thereof.
  • one aspect of the present invention provides a first anode, a second anode adjacent to the first anode in the X direction, and a third anode adjacent to the first anode in the Y direction.
  • a hole injection layer provided over the first to third anodes; a partition provided on the hole injection layer; a first opening of the partition and the first anode; a first light emitting layer that overlaps, a second light emitting layer positioned in the second opening of the partition and overlapping the second anode, and a third anode positioned in the third opening of the partition; a third light-emitting layer that overlaps with the light-emitting layer; and a cathode provided over the first light-emitting layer to the third light-emitting layer.
  • a first region located and extending in the X direction, and a second region located between the first anode and the second anode and extending in the Y direction; wherein the height in the first area is greater than the height in
  • Another aspect of the present invention includes a first anode, a second anode adjacent to the first anode in the X direction, a third anode adjacent to the first anode in the Y direction, and a third anode.
  • a hole-injection layer provided over one anode to a third anode; a partition provided on the hole-injection layer; a second light-emitting layer located in the second opening of the partition and overlapping the second anode; and a third light-emitting layer located in the third opening of the partition and overlapping the third anode.
  • the partition wall is positioned between the first anode and the third anode when viewed from above. , and a first region extending in the X direction, and a second region located between the first anode and the second anode and extending in the Y direction.
  • the display device wherein the height in the second region is greater than the height in the first region.
  • Another aspect of the present invention includes a first anode, a second anode adjacent to the first anode in the X direction, a third anode adjacent to the first anode in the Y direction, and a third anode.
  • a hole-injection layer provided over one anode to a third anode; a partition provided on the hole-injection layer; a second light-emitting layer located in the second opening of the partition and overlapping the second anode; and a third light-emitting layer located in the third opening of the partition and overlapping the third anode.
  • the partition wall is positioned between the first anode and the third anode when viewed from above. , and a first region extending in the X direction, and a second region located between the first anode and the second anode and extending in the Y direction.
  • the height in the first region is higher than the height in the second region, and the partition has a stacked structure in the first region.
  • Another aspect of the present invention includes a first anode, a second anode adjacent to the first anode in the X direction, a third anode adjacent to the first anode in the Y direction, and a third anode.
  • a hole-injection layer provided over one anode to a third anode; a partition provided on the hole-injection layer; a second light-emitting layer located in the second opening of the partition and overlapping the second anode; and a third light-emitting layer located in the third opening of the partition and overlapping the third anode.
  • the partition wall is positioned between the first anode and the third anode when viewed from above. , and a first region extending in the X direction, and a second region located between the first anode and the second anode and extending in the Y direction.
  • the height in region 2 is greater than the height in the first region, and the partition has a laminated structure in the second region.
  • the partition having a laminated structure preferably has a first partition containing an inorganic material and a second partition containing an organic material over the first partition.
  • a hole-transport layer is preferably provided between the hole-injection layer and the partition.
  • the hole injection layer preferably comprises molybdenum oxide.
  • each of the ends of the first to third anodes has a tapered shape.
  • Another aspect of the present invention forms a first anode, a second anode adjacent to the first anode in the X direction, and a third anode adjacent to the first anode in the Y direction.
  • a hole injection layer is formed over the first to third anodes, and a first opening overlapping the first anode and a second opening overlapping the second anode are formed on the hole injection layer , and a third opening overlapping with the third anode, the first light emitting layer located in the first opening, the second light emitting layer located in the second opening, or the third 3.
  • a method for manufacturing a display device comprising forming any one of third light-emitting layers located in three openings by an inkjet method, and forming a cathode over the first to third light-emitting layers, the method comprising: is positioned between the first anode and the third anode in top view and is positioned between the first region extending in the X direction and the first anode and the second anode, and a second region extending in the Y direction, the height of the first region being greater than the height of the second region in a cross-sectional view, and the first region moving along the first region. and a method for manufacturing a display device, in which either one of the light-emitting layer and the third light-emitting layer is formed by an inkjet method.
  • Another aspect of the present invention forms a first anode, a second anode adjacent to the first anode in the X direction, and a third anode adjacent to the first anode in the Y direction.
  • a hole injection layer is formed over the first to third anodes, and a first opening overlapping the first anode and a second opening overlapping the second anode are formed on the hole injection layer , and a third opening overlapping with the third anode, the first light emitting layer located in the first opening, the second light emitting layer located in the second opening, or the third 3.
  • a method for manufacturing a display device comprising forming any one of third light-emitting layers located in three openings by an inkjet method, and forming a cathode over the first to third light-emitting layers, the method comprising: is positioned between the first anode and the third anode in top view and is positioned between the first region extending in the X direction and the first anode and the second anode, and a second region extending in the Y direction, the height of the second region being greater than the height of the first region in a cross-sectional view, and moving along the second region while moving along the second region. and a method for manufacturing a display device, in which either one of the light-emitting layer and the third light-emitting layer is formed by an inkjet method.
  • a display device in which liquid pooling is suppressed and a manufacturing method thereof can be provided.
  • FIG. 1 is a perspective view illustrating a pixel region of one embodiment of the present invention.
  • 2A and 2B are cross-sectional views illustrating pixel regions of one embodiment of the present invention.
  • 3A to 3C are cross-sectional views illustrating pixel regions of one embodiment of the present invention.
  • 4A to 4D are cross-sectional views illustrating a method for manufacturing a pixel region of one embodiment of the present invention.
  • FIG. 5 is a perspective view illustrating a pixel region of one embodiment of the present invention.
  • FIG. 6 is a perspective view illustrating a pixel region of one embodiment of the present invention.
  • 7A and 7B are cross-sectional views illustrating pixel regions of one embodiment of the present invention.
  • FIG. 8A to 8C are cross-sectional views illustrating pixel regions of one embodiment of the present invention.
  • 9A to 9C are cross-sectional views illustrating a method for manufacturing a pixel region of one embodiment of the present invention.
  • FIG. 10 is a perspective view illustrating a pixel region of one embodiment of the present invention.
  • 11A to 11D2 are cross-sectional views illustrating light-emitting elements of one embodiment of the present invention.
  • 12A to 12D are circuit diagrams illustrating pixel circuits of one embodiment of the present invention.
  • 13A to 13D are circuit diagrams illustrating pixel circuits of one embodiment of the present invention.
  • FIG. 14 is a diagram illustrating a method for driving a pixel circuit of one embodiment of the present invention.
  • FIG. 15 is a perspective view showing an example of a display device. 16A and 16B are cross-sectional views showing examples of display devices.
  • FIG. 17 is a cross-sectional view showing an example of a display device.
  • FIG. 18A is a cross-sectional view showing an example of a display device;
  • FIG. 18B is a cross-sectional view showing an example of a transistor;
  • 19A and 19B are cross-sectional views showing examples of display devices.
  • FIG. 20 is a cross-sectional view showing an example of a display device.
  • FIG. 21A is a cross-sectional view showing an example of a display device.
  • 23A to 23D are diagrams illustrating examples of electronic devices.
  • 24A to 24F are diagrams illustrating examples of electronic devices.
  • 25A to 25F are diagrams illustrating examples of electronic devices.
  • the terms “source” and “drain” of a transistor are interchanged depending on the polarity of the transistor and the level of the potential applied to each terminal.
  • a terminal to which a low potential is applied is called a source
  • a terminal to which a high potential is applied is called a drain
  • a terminal to which a high potential is applied is called a source.
  • the connection relationship between transistors is sometimes described on the assumption that the source and the drain are fixed for convenience. replaced.
  • a source of a transistor means a source region which is part of a semiconductor film functioning as an active layer, or a source electrode connected to the semiconductor film.
  • the drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film.
  • a gate means a gate electrode.
  • a state in which transistors are connected in series means, for example, a state in which only one of the source and drain of a first transistor is connected to only one of the source and drain of a second transistor.
  • a state in which transistors are connected in parallel means that one of the source and drain of the first transistor is connected to one of the source and drain of the second transistor, and the other of the source and drain of the first transistor is connected to It means the state of being connected to the other of the source and the drain of the second transistor.
  • connection means electrical connection, and corresponds to a state in which current, voltage, or potential can be supplied or transmitted. Therefore, the state of being connected does not necessarily refer to the state of being directly connected, but rather the state of wiring, resistors, diodes, transistors, etc., so that current, voltage or potential can be supplied or transmitted.
  • a state of being indirectly connected via a circuit element is also included in this category.
  • connection includes such cases in which one conductive layer has the functions of a plurality of constituent elements.
  • a first electrode and a second electrode of a transistor may be used for description, but when one of the first electrode and the second electrode is a source electrode, the other is a drain electrode. .
  • a light-emitting element has a structure in which a layer containing an organic compound (referred to as an organic compound layer) is interposed between a pair of electrodes.
  • One of the pair of electrodes is an anode
  • the other of the pair of electrodes is a cathode
  • the organic compound layer is a functional layer
  • one of the functional layers is a light-emitting layer.
  • a structure in which functional layers form a laminate and at least a light-emitting layer is sometimes referred to as a light-emitting unit.
  • a light-emitting element is sometimes referred to as a light-emitting device.
  • a light-emitting device that does not use a metal mask or a fine metal mask (FMM) may be referred to as a light-emitting device having a metal maskless (MML) structure.
  • MML metal maskless
  • a structure in which light-emitting layers are separately painted in light-emitting elements of each color is sometimes referred to as an SBS (side-by-side) structure.
  • a light-emitting element capable of emitting white light is sometimes referred to as a white light-emitting element.
  • a white light-emitting element can be combined with a colored layer (for example, a color filter) to form a full-color display device.
  • a light-emitting element can be roughly classified into a single structure and a tandem structure.
  • a single structure has one light-emitting unit between a pair of electrodes, and the light-emitting unit has one or more light-emitting layers.
  • the single structure in order to obtain white light emission, it is sufficient to select two or more light emitting layers such that the light emitted from each of the light emitting layers has a complementary color relationship. For example, by setting the emission color of the first light-emitting layer and the emission color of the second light-emitting layer to have a complementary color relationship, it is possible to obtain a configuration in which the entire light-emitting element emits white light. The same applies to a light-emitting element having three or more light-emitting layers.
  • a tandem structure has two or more light-emitting units between a pair of electrodes, and each light-emitting unit has one or more light-emitting layers.
  • the light from the light emitting layers of two or more light emitting units may be combined to obtain white light emission.
  • the structure for obtaining white light emission is the same as the structure of the single structure.
  • the white light emitting element when comparing the white light emitting element (single structure and tandem structure) and the light emitting element having the SBS structure, the light emitting element having the SBS structure can consume less power than the white light emitting element. If it is desired to keep power consumption low, it is preferable to use a light-emitting element having an SBS structure.
  • the white light emitting element is preferable because the manufacturing process is simpler than that of the SBS structure light emitting element, so that the manufacturing cost can be reduced or the manufacturing yield can be increased.
  • a display device which is one embodiment of the present invention will be described.
  • a display device includes a light-emitting element, which includes a hole-injection layer containing a hole-injection material, a hole-transport layer containing a hole-transport material, a light-emitting layer containing a light-emitting material, and an electron-transport material. or an electron injection layer containing an electron injection material.
  • any of the layers described above can be made by a wet method. In this embodiment mode, the case where the light-emitting layer is mainly manufactured by a wet method is described.
  • the wet method is a method of dissolving or dispersing a material having a predetermined function in a solvent, liquefying the material to obtain a liquid composition, and applying the liquid composition. After application, it is solidified or made into a thin film through a drying or curing process.
  • a liquid composition may be referred to as a solution.
  • Wet methods typically include a spin coating method, an inkjet method, a casting method, a printing method, a dispensing method, a spray method, and the like.
  • the display device which is one embodiment of the present invention also has features such as the height of the partition. Further, as a display device according to one embodiment of the present invention, Structural Example 1 in which a hole-injecting layer is positioned below partition walls and Structural Example 2 in which a hole-injecting layer and a hole-transporting layer are positioned below partition walls will be described. .
  • ⁇ Configuration example 1> 1 shows an example of a perspective view of a display device
  • FIGS. 2A to 3C show examples of cross-sectional views of a display device
  • FIG. 4 shows an example of manufacturing a light-emitting layer
  • FIG. 5 shows an example of a perspective view of a display device different from that of FIG.
  • the display device has a pixel region 100 in which light emitting elements are provided, and also has a driver circuit region and the like.
  • the pixel region 100 has a plurality of pixels, and each pixel has a plurality of sub-pixels.
  • a pixel is the minimum unit capable of full-color display, and when full-color display is achieved with red, green, and blue, one of a plurality of sub-pixels in a top view (sometimes referred to as a plan view) is a red light-emitting element.
  • One may correspond to a light emitting region, another may correspond to a light emitting region of a green light emitting device, and another may correspond to a light emitting region of a blue light emitting device.
  • each sub-pixel also has a transistor electrically connected to each light emitting element, and the transistor can be used to control the light emitting element.
  • a display device having such a structure is called an active matrix display device, and Structural Example 1 or the like which is one embodiment of the present invention can be applied to the display device.
  • Structural Example 1 and the like which are one embodiment of the present invention can also be applied to a passive matrix display device.
  • the X direction and the Y direction intersecting with the X direction may be used as shown in FIG.
  • the X direction is the direction along the wiring to which the gate signal is supplied
  • the Y direction is the direction along the wiring to which the source signal is supplied.
  • the partition 110 includes a first region 110x and a second region 110y, and the partition 110 is characterized in that the top surface of the second region 110y is higher than the top surface of the first region 110x.
  • the light-emitting layer 115 includes a light-emitting layer 115r, a light-emitting layer 115g, and a light-emitting layer 115b. It can correspond to a light-emitting layer included in a light-emitting element.
  • An insulating film 101 is provided on the above-described transistor as shown in FIG.
  • the insulating film serves as a formation surface for an anode or the like to be formed later. Therefore, the insulating film 101 is preferably formed using an organic material so that the formation surface thereof is flat. Further, the insulating film 101 is preferably formed using an inorganic material so that it functions as a protective film to prevent impurities from entering the transistor.
  • a first insulating film containing at least an inorganic material and a second insulating film containing an organic material positioned on the first insulating film are required. It is preferable to have a laminated structure having
  • the insulating film 101 is preferably formed using an organic resin such as a polyimide resin, a polyamide resin, an acrylic resin, a siloxane resin, a silicone resin, an epoxy resin, or a phenol resin as an organic material.
  • an organic resin such as a polyimide resin, a polyamide resin, an acrylic resin, a siloxane resin, a silicone resin, an epoxy resin, or a phenol resin
  • an impurity element such as lanthanum (La), nitrogen, or zirconium (Zr) to the above material may be used.
  • One or more inorganic materials selected from aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. It is preferable to form an insulating film 101 including Note that a material obtained by adding an impurity element such as lanthanum (La), nitrogen, or zirconium (Zr) to the above material may be used.
  • an impurity element such as lanthanum (La), nitrogen, or zirconium (Zr)
  • An anode 102 is formed on the insulating film 101 .
  • the anode 102 is electrically connected to the transistor through a contact hole or the like provided in the insulating film 101 .
  • a contact hole is an opening formed in an insulating film, and a wiring layer positioned below the insulating film (referred to as a lower wiring layer) is connected to a wiring layer positioned above the insulating film (referred to as an upper wiring layer).
  • a contact hole is an opening formed in an insulating film, and a wiring layer positioned below the insulating film (referred to as a lower wiring layer) is connected to a wiring layer positioned above the insulating film (referred to as an upper wiring layer).
  • the lower wiring layer has a region exposed through the opening
  • the upper wiring layer has a region located inside the opening in cross-sectional view.
  • Anode 102 is supplied with a signal, eg, a predetermined potential, by the transistor. Therefore, the anode 102 is processed so as to be independent for each sub-pixel. Processing to become independent is sometimes described as division. Also, the processing may be referred to as patterning. Furthermore, the anode 102 electrically connected to the transistor is sometimes referred to as a pixel electrode.
  • the anode 102 is an ITO film (a film containing indium, tin, and oxygen, referred to as an indium tin oxide film), an indium tin oxide film containing silicon, an indium oxide film containing 2 to 20 wt% zinc oxide. , or has a titanium nitride film.
  • the anode 102 has a single layer film such as a chromium film, a tungsten film, a Zn film, an Al film, an Ag film, or a Pt film.
  • the anode 102 can have a laminated structure, for example, a laminated structure of a titanium nitride film and a film containing aluminum as its main component, or a three-layer laminated structure of a titanium nitride film, a film containing aluminum as its main component, and a titanium nitride film. etc. can be used.
  • the laminated structure has the effect of being able to reduce the resistance of the wiring while functioning as an anode, and of being able to make good ohmic contact with other layers.
  • the thickness of the entire anode 102 is preferably 100 nm or more and 250 nm or less.
  • the anode 102 has a transparent electrode with translucency.
  • the transparent electrode is made of a light-transmitting material, or thinned when a non-light-transmitting material is used.
  • the light transmittance of the transparent electrode is set to 40% or more. That is, for the anode 102, it is preferable to use a transparent electrode having a transmittance of 40% or more for visible light (light having a wavelength of 400 nm or more and less than 750 nm).
  • FIG. 1 shows a rectangular shape, and the short sides of the rectangular shape are arranged along the X direction and the long sides of the rectangular shape are arranged along the Y direction.
  • FIGS. 2A and 2B are cross-sectional views of the pixel region 100 shown in FIG. 1 taken along the dashed-dotted line AB.
  • the cross-sectional shape of the anode 102 is not limited, FIGS. 2A and 2B show the case where the end of the anode 102 has a tapered shape.
  • 3A to 3C are cross-sectional views of the pixel region 100 shown in FIG. 1 taken along the dashed-dotted line CD.
  • the ends of the anode 102 also have a tapered shape in FIGS. 3A to 3C.
  • 2A to 3C show the tapered shape of the end portion of the anode 102, the top side is shorter than the bottom side, but in addition to this, a reverse tapered shape in which the bottom side is shorter than the top side may be applied.
  • the ends of the anode 102 may not have a tapered shape, but may have a steep shape in which the upper side and the lower side are approximately the same (a shape in which the ends are vertical or a shape in which the ends are substantially vertical in a cross-sectional view). .
  • the tapered shape includes a region where the anode 102 is gradually thinned. Due to the tapered shape, cutting of the thin film formed on the anode 102 can be suppressed.
  • the anode having the thinned region may have a gradual increase in resistance. That is, the anode 102 includes a region of high resistance corresponding to the tapered shape.
  • the anode having the high-resistance region can also be considered to be a region to which a signal supplied from the transistor, specifically, a voltage is difficult to be applied.
  • a hole injection layer 104 is formed on the anode 102, as shown in FIGS. 1-3C. Since the hole injection layer 104 is formed on the anode 102, it is difficult to cut, which is preferable.
  • the hole injection layer 104 is formed over the entire pixel region 100 instead of dividing each sub-pixel like the anode 102 . That is, the hole injection layer 104 is formed over a plurality of anodes and can be shared by each sub-pixel. A layer that can be shared by each sub-pixel is referred to as a common layer.
  • the hole injection layer 104 can be formed by a wet method or a vapor deposition method. By using the hole injection layer 104 as a common layer, a step of separately painting each sub-pixel is unnecessary.
  • the hole injection layer 104 has a region that overlaps the tapered region of the anode 102 . As described above, since the tapered region of the anode 102 has high resistance, holes are difficult to be injected from the anode 102 into the hole-injection layer 104, or holes are not injected into the hole-injection layer 104 in the portion overlapping with the high-resistance region. . When the hole-injection layer 104 has the above portion, crosstalk between adjacent light-emitting elements can be suppressed. Crosstalk means that a signal from a transistor of an adjacent subpixel is transmitted to a non-driven subpixel. Suppression of crosstalk is particularly desired when adjacent light emitting elements have different colors.
  • the hole injection layer 104 is formed on the anode 102 having the reverse tapered shape and steep shape, the hole injection layer 104 is cut, so the crosstalk is suppressed.
  • the effect of the configuration in which the hole injection layer 104 and the like are provided along the anode 102 in this manner is to suppress crosstalk.
  • a hole transport layer may be provided on the hole injection layer 104 .
  • Partition 110> since the light-emitting layer is separately coated by a wet method such as an inkjet method, a section for dripping a solution is required.
  • the compartments can be provided by insulation, and such insulation is sometimes referred to as a bulkhead, embankment, or bank.
  • a barrier rib 110 is formed on the hole injection layer 104, and the barrier rib 110 is used to define sub-pixels, ie, light emitting regions.
  • the partition walls 110 that partition the sub-pixels have a lattice shape when the pixel region 100 is viewed from above.
  • the partition 110 has openings 112 corresponding to the sub-pixels, that is, the light-emitting regions in cross-sectional views of the pixel region 100 as shown in FIGS. 2A to 3C.
  • the hole-injection layer 104 is exposed from the opening 112 when viewed from above, and a solution containing a starting material such as the light-emitting layer 115r can be dropped so as to overlap at least the exposed hole-injection layer 104 .
  • the solution X containing the starting material for the hole transport layer may be dropped before dropping the solution containing the starting material for the light-emitting layer 115r. After the solution X is added dropwise, the solvent is removed from the solution X through a baking step or the like, and further cured to obtain the hole transport layer.
  • FIG. 2A the upper end of the second region 110y has a corner portion
  • FIG. 2B the upper end of the second region 110y has a rounded portion
  • FIG. 3A the upper end of the first region 110x has a corner portion
  • FIG. 3B the upper end of the first region 110x has a rounded portion
  • FIG. 3C has a configuration in which the upper end of the first region 110x has a rounded portion, and the light emitting layer 115r is also provided on the upper surface of the first region 110x.
  • the light-emitting material included in the light-emitting layer 115r that is, the light-emitting material included in the starting material will be described later.
  • the ends of the partition walls 110 may have a tapered shape.
  • the lower end of partition 110 can be longer than the upper end to provide a tapered shape.
  • the partition 110 may have a reverse tapered shape with a lower end shorter than an upper end. Since the end portion of the partition wall 110 has a tapered shape, the solution from the inkjet device is dripped into the section of the target light emitting element, so that it is difficult for adjacent light emitting elements of different colors to mix.
  • the tapered shape includes a shape in which the partition wall 110 has a region where the thickness is gradually reduced.
  • the thin film formed on the tapered partition wall 110 can be prevented from being cut or the like.
  • the ends of the partition walls 110 have a tapered shape in which the upper side is shorter than the lower side. You can also Of course, the ends of the partition walls 110 may not have a tapered shape, but may have a steep shape in which the upper side and the lower side are approximately the same (a shape in which the ends are vertical or a shape in which the ends are approximately vertical in a cross-sectional view). .
  • the partition 110 has a single-layer structure or laminated structure of an inorganic material, a single-layer structure or laminated structure of an organic material, or a laminated structure of an inorganic material and an organic material.
  • the laminated structure of the inorganic material and the organic material one of the inorganic material and the organic material is positioned in the lower layer, and the other is positioned in the upper layer.
  • the partition walls 110 may be formed. Note that a material obtained by adding an impurity element such as lanthanum (La), nitrogen, or zirconium (Zr) to the above material may be used.
  • the barrier ribs 110 made of an inorganic material may have corners at the top as shown in FIGS. 2A and 3A.
  • the partition 110 is preferably formed using an organic resin such as a polyimide resin, a polyamide resin, an acrylic resin, a siloxane resin, a silicone resin, an epoxy resin, or a phenol resin as an organic material.
  • an organic resin such as a polyimide resin, a polyamide resin, an acrylic resin, a siloxane resin, a silicone resin, an epoxy resin, or a phenol resin
  • a material obtained by adding an impurity element such as lanthanum (La), nitrogen, or zirconium (Zr) to the above material may be used.
  • the barrier rib 110 made of an organic material has a round portion at the top as shown in FIGS. 2B, 3B and 3C. Having a rounded portion may be described as having a curved top edge or having a rounded top edge.
  • the partition 110 also has a rounded lower end. Although not shown, if a negative photosensitive resin or a positive photosensitive resin is used as the organic material, the upper and lower ends of the partition walls 110 can be rounded.
  • the partition 110 has a first region 110x extending along the X direction and a second region 110y extending along the Y direction. In a cross-sectional view of the pixel region 100, the first region 110x and the second region 110y have different heights.
  • FIGS. 1 to 3C show the case where the top surface of the barrier rib 110 is higher in the second region 110y than in the first region 110x. Since the positions of the uppermost surfaces of the partition walls 110 are compared in this embodiment mode, either the film thickness of the first region 110x or the film thickness of the second region 110y may be larger. Further, as shown in FIG. 1, the highest point of the top surface of the partition 110 is the intersection of the first region 110x and the second region 110y.
  • FIG. 4 shows how the solution is separately applied to the light-emitting layer by an ink jet method, but it is preferable because the nozzles 119r, 119g, and 119b of the ink jet device can be moved along the second region 110y where the uppermost surface is high.
  • FIG. 4 shows nozzles 119r, 119g, and 119b, and explains how solutions containing starting materials for different light-emitting layers are dropped from each nozzle. good.
  • light emitting elements of the same color can be formed along the second region 110y, and mass productivity is considered to be high.
  • FIG. 4 shows the septum 110 corresponding to FIG. 2A with a rounded top and tapered ends, whereas the septum 110 shown in FIG. 2B has a rounded top and edges.
  • the portion may have a tapered shape, or may have another shape.
  • the ink jet device it is preferable to move the ink jet device along the partition wall 110 in the region where the uppermost surface is high. That is, the top surface of the first region 110x of the partition may be higher than the top surface of the second region 110y of the partition, and the inkjet device may be moved along the first region 110x.
  • the second regions 110y are located between different colored light emitting elements. That is, the second region 110y is arranged between sub-pixels in which light emitting elements of different colors are formed.
  • the second region 110y arranged in this way can also provide an effect that the solution discharged from the nozzles does not mix between sub-pixels.
  • the solution begins to dry the moment it is dropped and aggregates, making it difficult to control the aggregation.
  • the first region 110x be arranged for each sub-pixel. That is, in order to prevent the color mixture, it is preferable to arrange the first region 110x in addition to the second region 110y, so that the solution discharged from the nozzle can stay in the target light emitting region.
  • ⁇ Method 1 for Manufacturing First Region 110x and Second Region 110y A method for manufacturing the first region 110x and the second region 110y shown in FIG. 1 will be described. First, only the second region 110y is formed in a strip shape. A material for the partition 110 can be selected to form the second region 110y. For example, photosensitive polyimide will be used. A polyimide precursor is applied to the entire pixel region 100 and dried. Using a photoresist or the like, a mask is arranged so as to overlap with a region that is desired to be the second region 110y. Alternatively, the mask is arranged so as to overlap with areas other than the second area 110y. When exposure and development are performed using the mask, polyimide is arranged corresponding to the second region 110y. After that, imidation is performed as necessary. The second region 110y can be obtained in this way.
  • the first region 110x is formed in a strip shape. Specifically, the first region 110x can be obtained through the same steps as those for the second region 110y.
  • both the second region 110y and the first region 110x are formed in a strip shape, the arrangement of the mask is facilitated.
  • the amount of the precursor is increased when forming the second region 110y compared to when forming the first region 110x in a band shape.
  • the second region 110y preferably has a height of 1.5 to 3 times the height of the first region 110x.
  • both polyimides are laminated
  • the partition 110 can have a layered structure such as a lower partition containing an inorganic material and an upper partition containing an organic material.
  • a layered structure such as a lower partition containing an inorganic material and an upper partition containing an organic material.
  • an inorganic material for the lower partition is first formed over the entire pixel region 100, and an organic material for the upper partition is formed thereon.
  • This laminated structure is applied to the second region 110y.
  • only the inorganic material or only the organic material is applied to the first region 110x.
  • a first region 110x and a second region 110y can also be obtained in this way.
  • the upper partition can be used as a mask for processing the lower partition. Therefore, in a cross-sectional view, the end of the upper partition and the end of the lower partition can be matched or substantially matched. Alternatively, the edge of the upper partition can be located inside the edge of the lower partition having the inorganic material.
  • the edge of the upper partition can be located outside the edge of the lower partition having the inorganic material.
  • light emitting layers 115r, 115g, and 115b are separately formed on the hole injection layer 104 as shown in FIGS.
  • the colored structure corresponds to the SBS structure light emitting element.
  • the luminescent colors of the luminescent layers 115r, 115g, and 115b correspond to red, green, and blue, which are representative of full-color display.
  • the light emitting layer 115r may be formed over the first region 110x.
  • the light-emitting layer 115r is likely to be formed over the first region 110x, for example, when the solution is continuously discharged from the nozzle. The same applies to the light-emitting layer 115g and the light-emitting layer 115b.
  • the wet method includes a spin coating method, an inkjet method, a casting method, a printing method, a dispensing method, a spray method, and the like.
  • productivity can be improved.
  • a configuration in which at least the light-emitting layer is formed by a wet method is highly flexible and suitable.
  • Solvents for solutions used in the wet method include, for example, chlorine-based solvents such as dichloroethane, trichloroethane, chlorobenzene, and dichlorobenzene; ether-based solvents such as tetrahydrofuran, dioxane, anisole, and methylanisole; toluene, xylene, mesitylene, ethylbenzene, and hexyl.
  • chlorine-based solvents such as dichloroethane, trichloroethane, chlorobenzene, and dichlorobenzene
  • ether-based solvents such as tetrahydrofuran, dioxane, anisole, and methylanisole
  • toluene xylene, mesitylene, ethylbenzene, and hexyl.
  • Aromatic hydrocarbon solvents such as benzene and cyclohexylbenzene, aliphatic hydrocarbon solvents such as cyclohexane, methylcyclohexane, pentane, hexane, heptane, octane, nonane, decane, dodecane, and bicyclohexyl, acetone, methyl ethyl ketone, benzophenone, and acetophenone Ketone solvents such as ethyl acetate, butyl acetate, ethyl cellosolve acetate, methyl benzoate, ester solvents such as phenyl acetate, polyhydric alcohol solvents such as ethylene glycol, glycerin, hexanediol, isopropyl alcohol, cyclohexanol, etc. Examples include alcohol solvents, sulfoxide solvents such as dimethylsulfoxide, and amide solvents such as
  • a starting material for a light-emitting layer formed by an inkjet method preferably includes a polymer material (also referred to as a polymer-based light-emitting organic material). That is, in order to obtain a solution to be dropped by an inkjet method, it is preferable to use a polymer material that is easily mixed with the above solvent.
  • a polymer material also referred to as a polymer-based light-emitting organic material
  • the inkjet device has nozzles 119r, 119g and 119b.
  • the nozzle 119 includes nozzles 119r, 119g, and 119b, and the opening diameter (also referred to as nozzle diameter) through which the solution is discharged from the opening provided in the nozzle 119 has a diameter of several ⁇ m or more and several tens of ⁇ m or less.
  • a part having nozzles is sometimes called a head.
  • the head is provided with a solution ejection control unit, and has, for example, a piezoelectric element (piezo element).
  • a pressure element can change the volume of an ink tank connected to the nozzle to drop the solution.
  • the amount of one droplet is often several pl or more and several tens of pl or less depending on the nozzle diameter. 1 pl of the solution can be considered as the amount to form a cube with a side of about 10 ⁇ m.
  • the solution may be intermittently dripped from nozzles 119r, 119g, and 119b.
  • the solution may be described as a droplet.
  • the solution may be linearly and continuously dropped from the nozzles 119r, 119g, and 119b. In both cases of intermittent dropping and continuous dropping, the solution may be applied onto the partition wall 110 .
  • FIGS. 2A to 3C show a first puddle 118r, a second puddle 118g, and a third puddle 118b corresponding to the light-emitting layer 115r, the light-emitting layer 115g, and the light-emitting layer 115b, respectively.
  • Each puddle can be seen in the area circled by the dotted line.
  • Liquid puddles are caused by a drying process in a normal pressure atmosphere or a reduced pressure atmosphere, which is performed to remove the solvent from the solution discharged by the wet method.
  • a liquid pool occurs due to a phenomenon in which the solute gathers outside with the driving force of the surface tension of the solution.
  • the liquid puddle can be said to be a portion where the light-emitting layer is thicker than the central portion in the inner periphery of the partition wall 110 (for example, the region indicated by the dotted lines in FIGS. 2A to 3B).
  • Current is concentrated in the center of the light emitting area due to the liquid pool, and the current density becomes non-uniform, so the smaller the liquid pool, the better.
  • the partition 110 is formed over the hole-injection layer 104, there is no liquid pool in the hole-injection layer 104 even when the hole-injection layer 104 is formed by a wet method.
  • a minute liquid pool corresponding to the light-emitting layer formed by a wet method is formed.
  • a display device having a high-definition pixel region 100 with a small liquid pool can be provided.
  • FIG. 5 shows a partition 110 that differs from the pixel region 100 shown in FIG. 1 in that the first region 110x is higher than the second region 110y.
  • the second region 110y has a height such that the solution can be dripped onto the light-emitting layer area of the same color and color mixing can be prevented, and the first region 110x is higher.
  • the first region 110x sufficiently separates the light-emitting layers of the same color from each other. Therefore, crosstalk between adjacent light emitting elements can be prevented in the same color light emitting layers.
  • a hole-transport layer may be provided between the hole-injection layer 104 and the light-emitting layer 115 .
  • an electron-transporting layer, an electron-injecting layer, and a cathode are provided to complete the light-emitting element.
  • An electron transport layer, an electron injection layer, and a cathode can be formed over the pixel area 100 . That is, the electron transport layer, the electron injection layer, or the cathode shared by each pixel is a common layer.
  • the electron transport layer, electron injection layer, and cathode can be formed by a wet method or a vapor deposition method. When forming a common layer, it is preferable to use a spin coating method as a wet method.
  • FIG. 6 shows an example of a perspective view of a display device
  • FIGS. 7A to 8C show examples of cross-sectional views of a display device
  • FIG. 9 shows an example of manufacturing a light-emitting layer
  • FIG. 10 shows an example of a perspective view of a display device different from that of FIG.
  • the display device has a pixel area 100 and other areas such as a driver circuit area. Insulating film 101, anode 102, hole injection layer 104, hole transport layer 105, partition wall 110, light emitting layer 115 and the like are shown in pixel region 100 of FIG.
  • the partition 110 includes a first region 110x and a second region 110y, and the partition 110 is characterized in that the top surface of the second region 110y is higher than the top surface of the first region 110x.
  • the light-emitting layer 115 includes a light-emitting layer 115r, a light-emitting layer 115g, and a light-emitting layer 115b. It can correspond to a light-emitting layer included in a light-emitting element.
  • the configuration of the pixel region 100 has portions that are similar to configuration example 1, and the description is omitted in the case of similarity.
  • ⁇ Insulating film 101> An insulating film 101 is provided on the above-described transistor as shown in FIG.
  • the insulating film can have the same structure as ⁇ insulating film 101> of structural example 1, and the structure and the like are as described in ⁇ insulating film 101> of structural example 1.
  • FIG. Therefore, in Structural Example 2, detailed description of the insulating film 101 is omitted.
  • An anode 102 is provided on the insulating film 101 .
  • the anode can have the same configuration as ⁇ anode 102> of configuration example 1, and the configuration and the like are as described in ⁇ anode 102> of configuration example 1. Therefore, in Configuration Example 2, detailed description of the anode 102 is omitted.
  • FIGS. 7A and 7B are cross-sectional views of the pixel region 100 shown in FIG. 6 taken along the dashed-dotted line AB.
  • the cross-sectional shape of the anode 102 is not limited, FIGS. 7A and 7B show the case where the end of the anode 102 has a tapered shape.
  • 8A to 8C are cross-sectional views of the pixel region 100 shown in FIG. 6 taken along the dashed-dotted line CD. 8A to 8C, the end of the anode 102 also has a tapered shape.
  • 7A to 8C show the tapered shape of the end portion of the anode 102, the top side is shorter than the bottom side, but a reverse tapered shape in which the bottom side is shorter than the top side may be applied.
  • the ends of the anode 102 may not have a tapered shape, but may have a steep shape in which the upper side and the lower side are approximately the same (a shape in which the ends are vertical or a shape in which the ends are substantially vertical in a cross-sectional view). .
  • the anode having the thinned region may have a gradual increase in resistance. That is, the anode 102 includes a region of high resistance corresponding to the tapered shape.
  • the anode having the high-resistance region can also be considered to be a region to which a signal supplied from the transistor, specifically, a voltage is difficult to be applied.
  • ⁇ Hole injection layer 104> A hole injection layer 104 is formed on the anode 102, as shown in FIGS. 6-8C.
  • the hole injection layer can have the same structure as ⁇ hole injection layer 104> of Structural Example 1, and the structure and the like are as described in ⁇ Hole Injection Layer 104> of Structural Example 1. Therefore, in Structural Example 2, detailed description of the hole injection layer 104 is omitted.
  • the hole transport layer 105 is formed on the hole injection layer 104 .
  • the hole-transporting layer 105 is formed over the entire pixel region 100 without dividing it into individual pixels like the anode 102 . That is, the hole transport layer 105 is formed over a plurality of anodes and can be shared by each pixel. Again, a layer that can be shared by each sub-pixel is referred to as a common layer.
  • the hole-transporting layer 105 can be formed by a wet method or a vapor deposition method. By using the hole-transporting layer 105 as a common layer, a step of separately painting each sub-pixel is unnecessary.
  • Hole transport layer 105 has a region that overlaps the tapered region of anode 102 . As described above, since the tapered region of the anode 102 has high resistance, the hole-transport layer 105 does not easily transport holes or cannot transport holes in the portion overlapping with the high-resistance region. When the hole-transport layer 105 has the above region, crosstalk between adjacent light-emitting elements of different colors can be suppressed.
  • holes are less likely to be injected from the anode 102 into the hole-injecting layer 104 or holes are not injected into the hole-injecting layer 104 in the portion overlapping with the high-resistance region.
  • the hole transport layer 105 is formed on the anode 102 having the reverse tapered shape and steep shape, the crosstalk is suppressed by cutting the hole transport layer 105 .
  • the effect of the configuration in which the hole transport layer 105 and the like are provided along the anode 102 in this manner is suppression of crosstalk.
  • Partition 110> since the light-emitting layer is separately coated by a wet method such as an inkjet method, a section for dripping a solution is required.
  • the compartments can be provided by insulation, and such insulation is sometimes referred to as a bulkhead, embankment, or bank.
  • a barrier rib 110 is formed on the hole transport layer 105, and the barrier rib 110 is used to define sub-pixels, ie, light emitting regions.
  • the partition 110 can have the same configuration as ⁇ partition 110> of configuration example 1, and the configuration and the like are as described in ⁇ partition 110> of configuration example 1. FIG. Therefore, in Configuration Example 2, detailed description of the partition 110 is omitted.
  • the partition 110 has a first region 110x extending along the X direction and a second region 110y extending along the Y direction. In a cross-sectional view of the pixel region 100, the first region 110x and the second region 110y have different heights.
  • FIG. 6 to 8C show the case where the top surface of the barrier rib 110 is higher in the second region 110y than in the first region 110x. Since the positions of the uppermost surfaces of the partition walls 110 are compared in this embodiment mode, either the film thickness of the first region 110x or the film thickness of the second region 110y may be larger. Further, as shown in FIG. 6, the highest point of the top surface of the partition wall 110 is the intersection of the first region 110x and the second region 110y.
  • FIG. 9 shows how the solution is separately applied to the light-emitting layer by an ink jet method, and it is preferable because the nozzles 119r, 119g, and 119b of the ink jet device can be moved along the second region 110y where the uppermost surface is high.
  • FIG. 9 shows nozzles 119r, 119g, and 119b, and explains how solutions containing starting materials for different light-emitting layers are dropped from the respective nozzles. good too. In this case, light emitting elements of the same color can be formed along the second region 110y, and mass productivity is considered to be high.
  • FIG. 9 shows a partition 110 with a rounded upper end and tapered ends corresponding to FIG. 7A, whereas the partition 110 shown in FIG.
  • the portion may have a tapered shape or may have other shapes.
  • the inkjet device can be moved along the partition wall 110 in the region where the top surface is high.
  • the ink jet device it is preferable to move the ink jet device along the partition wall 110 in the region where the uppermost surface is high. That is, the top surface of the first region 110x of the partition may be higher than the top surface of the second region 110y of the partition, and the inkjet device may be moved along the first region 110x.
  • the second region 110y is located between different colored light emitting elements. That is, the second region 110y is arranged between sub-pixels corresponding to light-emitting elements of different colors.
  • the second region 110y arranged in this way can also provide an effect that the solution discharged from the nozzles does not mix between sub-pixels.
  • the solution begins to dry the moment it is dropped and aggregates, making it difficult to control the aggregation.
  • the first region 110x be arranged for each sub-pixel. That is, in order to prevent the color mixture, it is preferable to arrange the first region 110x in addition to the second region 110y, so that the solution discharged from the nozzle can stay in the target light emitting region.
  • light emitting layers 115r, 115g, and 115b are separately formed on the hole transport layer 105 as shown in FIGS.
  • the colored structure corresponds to the SBS structure light emitting element.
  • the luminescent colors of the luminescent layers 115r, 115g, and 115b correspond to red, green, and blue, which are representative of full-color display.
  • the light-emitting layers 115r, 115g, and 115b are formed by a wet method.
  • a wet method or the like a method or a structure similar to the specific method and materials described in ⁇ Light-emitting layers 115r, 115g, and 115b> of Structural Example 1 can be used.
  • the light emitting layer 115r may be formed over the first region 110x.
  • the light-emitting layer 115r is likely to be formed over the first region 110x, for example, when the solution is continuously discharged from the nozzle. The same applies to the light-emitting layer 115g and the light-emitting layer 115b.
  • the inkjet device has nozzles 119r, 119g and 119b.
  • the inkjet device and the like can have the same configuration as the configuration described in Configuration Example 1 ⁇ Inkjet Device>, and is as described in Configuration Example 1 ⁇ Inkjet Device>. A detailed description of ⁇ inkjet device> will be omitted.
  • liquid pools occur near the partition wall 110 as shown in FIGS. 7A to 8C.
  • 7A to 8C show the first liquid pool 118r, the second liquid pool 118g, and the third liquid pool 118b corresponding to the light emitting layer 115r, the light emitting layer 115g, and the light emitting layer 115b, respectively.
  • Liquid puddles are caused by a drying process in a normal pressure atmosphere or a reduced pressure atmosphere, which is performed to remove the solvent from the solution discharged by the wet method.
  • a liquid pool occurs due to a phenomenon in which the solute gathers outside with the driving force of the surface tension of the solution.
  • the liquid pool can be said to be a portion where the light-emitting layer is thicker than the central portion in the inner periphery of the partition wall 110 (for example, the region indicated by the dotted lines in FIGS. 7A to 8B). Current is concentrated in the center of the light emitting area due to the liquid pool, and the current density becomes non-uniform.
  • the partition 110 since the partition 110 is formed over the hole-transport layer 105, liquid does not pool in the hole-transport layer even when the hole-transport layer 105 is formed by a wet method. In other words, in one embodiment of the present invention, a minute liquid pool corresponding to the light-emitting layer formed by a wet method is formed. According to one embodiment of the present invention, a display device having a high-definition pixel region 100 with a small liquid pool can be provided.
  • FIG. 10 shows a partition 110 that differs from the partition 110 shown in FIG. 6 in that the first region 110x is higher than the second region 110y.
  • the second region 110y has a height such that the solution can be dripped onto the light-emitting layer area of the same color and color mixing can be prevented, and the first region 110x is higher.
  • the first region 110x sufficiently separates the light-emitting layers of the same color from each other. Therefore, crosstalk between adjacent pixels can be prevented between the same color light-emitting layers.
  • an electron-transporting layer, an electron-injecting layer, and a cathode are provided to complete the light-emitting element.
  • An electron transport layer, an electron injection layer, and a cathode can be formed over the pixel area 100 . That is, the electron transport layer, the electron injection layer, and the cathode are common layers in each pixel.
  • the electron transport layer, electron injection layer, and cathode can be formed by a wet method or a vapor deposition method. When forming a common layer, it is preferable to use a spin coating method as a wet method.
  • the light emitting element 20 has a light emitting unit 686 between a pair of electrodes (lower electrode 672, upper electrode 688).
  • the light-emitting unit 686 has multiple functional layers such as a layer 4430 , a light-emitting layer 4421 and a layer 4420 in order from the lower electrode 672 .
  • partition walls 110 are positioned relative to the functional layer formed by the wet method. For example, when the light-emitting layer 4421 is formed by a wet method, partition walls 110 are provided on the layer 4430 for partitioning the light-emitting layer 4421 .
  • the partition wall 110 has the first region and the second region with different heights as described in the above embodiments.
  • a functional layer containing a light-emitting material may be used for the light-emitting layer 4421 .
  • Layers 4420 and 4430 are described.
  • the layer 4430 positioned above the lower electrode 672 is a hole-injecting layer, a hole-transporting layer, and the like.
  • a structure in which the layers are stacked in order from the top to the bottom may be used.
  • Layer 4430 may be either a hole injection layer or a hole transport layer.
  • the layer 4420 may have a structure in which an electron-injecting layer, an electron-transporting layer, and the like are stacked in order from the upper electrode.
  • Layer 4420 may also be one of an electron injection layer and an electron transport layer.
  • the lower electrode 672 can be used as a cathode and the upper electrode 688 can be used as an anode.
  • the layer 4430 located on the lower electrode 672 may have a structure in which an electron injection layer, an electron transport layer, and the like are stacked in order from the lower electrode.
  • Layer 4430 can be either an electron injection layer or an electron transport layer.
  • the layer 4420 may have a structure in which a hole-injection layer, a hole-transport layer, and the like are stacked in order from the upper electrode.
  • Layer 4430 may be either a hole injection layer or a hole transport layer.
  • the lower electrode 672 can be formed by an evaporation method, a CVD method, or a sputtering method.
  • the upper electrode 688 can be formed by an evaporation method, a CVD method, or a sputtering method.
  • the layer 4430 can be formed by a wet method or an evaporation method.
  • the layer 4420 can be formed by a wet method or an evaporation method.
  • the partition 110 is formed over the layer 4430, and the light-emitting layer 4421 is formed by a wet method such as an inkjet method over the layer 4430 exposed from the partition 110 in top view.
  • Layer 4420 and top electrode 688 may also be a common layer, and layer 4420 and top electrode 688 may be formed over barrier rib 110 as in FIG. 11A. It is preferable to increase the thickness of the common layer so that it can get over the partition wall 110 . If there is a restriction on increasing the thickness of the common layer, the light-emitting layer 4421 may be thickened. In this case, the amount of the solution dropped from the inkjet device may be adjusted so that the film thickness of the light-emitting layer is 2/3 times or more and less than 1 times the height of the partition wall 110, for example.
  • FIG. 11B shows a more specific configuration of FIG. 11A.
  • the light-emitting element 20 shown in FIG. 11B includes a layer 4430-1 on the lower electrode 672, a layer 4430-2 on the layer 4430-1, a light-emitting layer 4421 on the layer 4430-2, and a layer 4420 on the light-emitting layer 4421.
  • the partition 110 is provided on the layer 4430-2 for partitioning the light-emitting layer 4421.
  • the partition wall 110 has the first region and the second region with different heights as described in the above embodiments.
  • layer 4430-1 functions as a hole injection layer and layer 4430-2 functions as a hole transport layer.
  • layer 4420-1 functions as an electron-transporting layer, and layer 4420-2 functions as an electron-injecting layer.
  • the lower electrode 672 can be used as a cathode and the upper electrode 688 can be used as an anode.
  • layer 4430-1 functions as an electron injection layer
  • layer 4430-2 functions as an electron transport layer
  • layer 4420-1 functions as a hole transport layer
  • layer 4420-2 functions as a hole injection layer. Function.
  • the layer included between the light-emitting layer 4421 and the lower electrode 672 and the layer included between the light-emitting layer 4421 and the upper electrode 688 are not limited to these. good.
  • a layer having both a carrier transport function and a carrier injection function may be used.
  • the lower electrode 672 can be formed by an evaporation method, a CVD method, or a sputtering method.
  • the upper electrode 688 can be formed by an evaporation method, a CVD method, or a sputtering method.
  • layer 4430-1 can be formed by a wet method or an evaporation method.
  • layer 4430-2 can be formed by a wet method or an evaporation method.
  • layer 4420-1 can be formed by a wet method or an evaporation method.
  • layer 4420-2 can be formed by a wet method or an evaporation method.
  • the partition 110 is formed over the layer 4430-2, and the light-emitting layer 4421 is formed by a wet method such as an inkjet method over the layer 4430-2 exposed from the partition 110 in top view.
  • Layers 4420-1, 4420-2, and top electrode 688 may be common layers, and layers 4420-1, 4420-2, and top electrode 688 may be formed over barrier rib 110 as in FIG. 11B. good. It is preferable to increase the thickness of the common layer so that it can get over the partition wall 110 . If there is a restriction on increasing the thickness of the common layer, the light-emitting layer 4421 may be thickened. In this case, the amount of the solution dropped from the inkjet device may be adjusted so that the film thickness of the light-emitting layer is 2/3 times or more and less than 1 times the height of the partition wall 110, for example.
  • FIGS. 11C1 and 11C2 modified examples of FIGS. 11A and 11B are shown in FIGS. 11C1 and 11C2.
  • 11C1 a plurality of light-emitting layers (a first light-emitting layer 4411, a second light-emitting layer 4412, and a third light-emitting layer 4413) are provided between the layers 4420 and 4430.
  • a plurality of light-emitting layers (a first light-emitting layer 4411 and a second light-emitting layer 4412) are provided between the layers 4420 and 4430.
  • the barrier ribs 110 are positioned with respect to the layers formed by the wet method.
  • the partition wall 110 by forming the partition wall 110 over the layer 4430, one or more of the plurality of light-emitting layers in FIGS. 11C1 and 11C2, specifically all the light-emitting layers can be formed by a wet method.
  • the partition wall 110 has the first region and the second region with different heights as described in the above embodiments.
  • the luminescent materials included in the plurality of luminescent layers in FIGS. 11C1 and 11C2 can be selected to have the same color or different colors. When the light-emitting materials of the same color are selected, it is possible to reduce the drive current at the expense of the drive voltage, which is advantageous in terms of high luminance and long life.
  • blue (B), green (G), and red (R) light-emitting substances of the same color are separately painted for each light-emitting element to enable full-color display.
  • a light-emitting element that emits white light can be obtained by selecting light-emitting substances so as to have complementary colors.
  • the luminescent color of the first luminescent layer 4411 and the luminescent color of the third luminescent layer 4413 are the same, and the luminescent color and the luminescent color of the second luminescent layer 4412 are in a complementary color relationship.
  • White light emission can be obtained from the light-emitting element 20 by using a light-emitting substance. Further, for example, in FIG.
  • white light emission can be obtained from the light-emitting element 20 by using a light-emitting substance so that the emission color of the first light-emitting layer 4411 and the emission color of the second light-emitting layer 4412 have a complementary relationship.
  • a light-emitting substance so that the emission color of the first light-emitting layer 4411 and the emission color of the second light-emitting layer 4412 have a complementary relationship.
  • desired colors such as blue (B), green (G), and red (R) using a color filter or a color conversion layer.
  • FIGS. 11C1 and 11C2 show a structure in which the light-emitting layers are laminated in three layers and two layers, the number of layers may be four or more.
  • a first light-emitting layer 4411 is formed over the layer 4430 exposed from the partition wall 110 by a wet method such as an inkjet method.
  • the lower electrode 672 and upper electrode 688 can be formed by vapor deposition, CVD, or sputtering.
  • Layers 4430 and 4420 can be formed by a wet method or an evaporation method. Among them, the layer 4420 and the upper electrode 688 can be shared among a plurality of light emitting elements and are referred to as a common layer.
  • a common layer is formed over the entire pixel region. The common layer is formed over the partition 110, but if the partition 110 does not cut the common layer, the thickness of the common layer should be increased.
  • the thickness of the partition wall 110 is 2/3 or more and less than 1. It is preferable to adjust the amount of the solution dropped from the inkjet device so that
  • layers 4420 and 4430 in FIGS. 11C1 and 11C2 may have a laminated structure of two or more layers as shown in FIG. 11B.
  • FIGS. 11D1 and 11D2 both show configuration examples in which light emitting units are stacked.
  • 11D1 and 11D2 have a first light-emitting unit 686a and a second light-emitting unit 686b, and have an intermediate layer 690 therebetween. It has a laminated structure of 690b.
  • First light-emitting unit 686a has layer 4430-1, first light-emitting layer 4411, and layer 4420-1.
  • Second light-emitting unit 686b also includes layer 4430-2, second light-emitting layer 4412, and layer 4420-2.
  • a partition wall 110 is positioned with respect to a layer formed by a wet method among the layers.
  • the partition wall 110 is provided for partitioning the first light-emitting layer 4411 and the second light-emitting layer 4412 .
  • the partition wall 110 has the first region and the second region with different heights as described in the above embodiments.
  • Layers 4420-1 and 4430-1 are functional layers similar to layers 4420 and 4430, respectively.
  • Layers 4420-2 and 4430-2 are functional layers similar to layers 4420 and 4430, respectively.
  • Intermediate layer 690 shown in FIG. 11D1 has dopant materials in materials similar to layer 4420-1 and acceptor materials in materials similar to layer 4430-2.
  • Intermediate layer 690a shown in FIG. 11D2 is a layer having a dopant material in the same material as layer 4420-1
  • intermediate layer 690b is a layer having an acceptor material in the same material as layer 4430-2.
  • the luminescent materials included in the plurality of luminescent layers can be selected from luminescent materials of the same color or luminescent materials of different colors.
  • the light-emitting materials of the same color it is possible to reduce the drive current at the expense of the drive voltage, which is advantageous in terms of high luminance and long life.
  • a light-emitting element that emits white light can be obtained by selecting light-emitting substances so as to have complementary colors.
  • color filters or color conversion layers are used, for example, blue (B), green (G), and blue (G). There are ways to get the desired color, such as red (R).
  • each light-emitting element is colored differently (for example, blue (B), green (G), and red (R)) to enable full-color display. .
  • the color purity can be further increased by providing the light emitting device 20 shown in FIG. 11 with a microcavity structure.
  • the microcavity structure has a configuration in which the optical distance between the upper electrode 688 and the lower electrode 672, specifically the distance, differs for each emission color.
  • the thickness of the lower electrode 672 may be made different.
  • the thickness of the lower electrode 672 is varied and the lower electrode 672 has a laminated structure of a first conductive film and a second conductive film on the first conductive film, the second conductive film It is easier to impart a microcavity structure when the film thicknesses of the layers are different.
  • the hole-injecting layer is a layer that injects holes from the anode into the hole-transporting layer.
  • it can be formed from a phthalocyanine-based complex compound, an aromatic amine compound, or a polymer such as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS). can.
  • the hole-injection layer may be formed using a substance having an acceptor property.
  • a substance having acceptor property an organic compound having an electron-withdrawing group (halogen group, cyano group, or the like) can be used.
  • condensed aromatic rings having multiple heteroatoms such as 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN)
  • HAT-CN 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene
  • a radialene derivative having an electron-withdrawing group is preferable because of its extremely high electron-accepting property.
  • molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used in addition to the organic compounds described above.
  • molybdenum oxide is preferable because it is stable in the air, has low hygroscopicity, and is easy to handle.
  • tin oxide, indium oxide, or titanium oxide may be used.
  • a substance having acceptor properties can extract electrons from an adjacent hole transport layer (or hole transport material) by applying a voltage between electrodes.
  • the hole injection layer may be formed of a composite material containing the material having the acceptor property and the material having the hole transport property.
  • Various organic compounds such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, or polymer compounds (oligomers, dendrimers, polymers, etc.) can be used as materials having hole-transport properties for use in composite materials. can be done.
  • a material having a hole-transport property used for the composite material is preferably a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more.
  • the hole-transporting material used for the composite material is preferably a compound having a condensed aromatic hydrocarbon ring or a ⁇ -electron rich heteroaromatic ring.
  • the condensed aromatic hydrocarbon ring anthracene ring, naphthalene ring, or the like is preferable.
  • the ⁇ -electron rich heteroaromatic ring is preferably a condensed aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, or a thiophene skeleton in the ring, specifically a carbazole ring or a dibenzothiophene ring, or A ring further condensed with an aromatic ring or heteroaromatic ring is preferred.
  • other aromatic amine compounds can be used as the material having a hole-transporting property.
  • the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that any substance having a higher hole-transport property than an electron-transport property can be used as the hole-transport material.
  • As the hole-transporting material specifically, a material having a high hole-transporting property such as a ⁇ -electron rich heteroaromatic compound or an aromatic amine is preferable.
  • the ⁇ -electron rich heteroaromatic ring is preferably a condensed aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, or a thiophene skeleton in the ring, specifically a carbazole ring or a dibenzothiophene ring, or an aromatic ring A ring or a ring further condensed with a heteroaromatic ring is preferred.
  • the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that other materials can be used as the electron-transporting material as long as they have a higher electron-transporting property than hole-transporting substances.
  • a metal complex, an organic compound having a ⁇ -electron-deficient heteroaromatic ring skeleton, and the like are preferable.
  • metal complexes having a quinoline skeleton in addition to metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., oxadiazole derivatives, triazole derivatives, imidazole derivatives, and oxazole derivatives , thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or other nitrogen-containing heteroaromatic compounds.
  • a material having a high electron-transport property such as a heteroaromatic compound can be used.
  • a heterocyclic compound having a diazine skeleton, a heterocyclic compound having a triazine skeleton, or a heterocyclic compound having a pyridine skeleton is preferable because of its high reliability.
  • a diazine (pyrimidine, pyrazine, or the like) or a heterocyclic compound having a triazine skeleton has a high electron-transport property and contributes to a reduction in driving voltage.
  • the electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds or complexes thereof can be used as materials with high electron injection properties.
  • a layer made of an electride or a substance having an electron transport property and containing an alkali metal, an alkaline earth metal, or a compound thereof can also be used.
  • a material having an electron transport property may be used as the electron injection layer described above.
  • a compound having an electron-deficient heteroaromatic ring having an uncommon electron pair can be used as a material having an electron-transport property.
  • compounds having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, or pyridazine ring), or a triazine ring such as 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen) , or 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) can be used.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • a light-emitting layer is a layer containing a light-emitting material (also referred to as a light-emitting substance).
  • the emissive layer can have one or more emissive materials.
  • a substance that emits light such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • a fluorescent material a phosphorescent material, a substance exhibiting thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF) material, a quantum dot material, or the like can be used.
  • TADF thermally activated delayed fluorescence
  • a known material can be used as the fluorescent material, but a heteroaromatic diamine compound or a condensed aromatic diamine compound is particularly preferable as the blue fluorescent material.
  • examples of such compounds include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, or naphthalene derivatives. etc.
  • a condensed aromatic diamine compound represented by a pyrenediamine compound is preferable because it has a high hole-trapping property and is excellent in luminous efficiency and reliability.
  • Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, carbene skeleton, pyrimidine skeleton, pyrazine skeleton, pyridine skeleton, and quinoline skeleton, and electron-withdrawing groups.
  • Organometallic complexes (especially iridium complexes), platinum complexes, or rare earth metal complexes having phenylpyridine derivatives as ligands can be mentioned.
  • TADF materials include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium.
  • a metal-containing porphyrin containing (Pd) or the like, or a heterocyclic compound having one or both of a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring, or the like can be used.
  • pyridine skeletons having a ⁇ -electron-deficient heteroaromatic ring
  • diazine skeletons pyrimidine skeleton, pyrazine skeleton, or pyridazine skeleton
  • triazine skeletons are all stable and reliable, and thus are preferable as TADF materials.
  • a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton all have high acceptability and good reliability, and are therefore preferable as TADF materials.
  • the acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are all stable and reliable, so TADF materials are It is preferable to have at least one of the skeletons.
  • a dibenzofuran skeleton is preferable as the furan skeleton, and a dibenzothiophene skeleton is preferable as the thiophene skeleton.
  • an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton is particularly preferred.
  • a ⁇ -electron-deficient heteroaromatic ring and a ⁇ -electron-rich heteroaromatic ring are present, a ⁇ -electron-deficient skeleton or a ⁇ -electron-rich heteroaromatic ring can be used instead of at least one of them.
  • a ⁇ -electron rich skeleton an aromatic amine skeleton, a phenazine skeleton, or the like can be used.
  • ⁇ -electron-deficient skeletons examples include xanthene skeletons, thioxanthene dioxide skeletons, oxadiazole skeletons, triazole skeletons, imidazole skeletons, anthraquinone skeletons, boron-containing skeletons such as phenylborane and borantrene, and benzonitrile or cyanobenzene skeletons.
  • An aromatic ring having a nitrile group or a cyano group, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, or the like can be used.
  • the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • organic compounds host material, assist material, etc.
  • guest material One or both of the above-described hole-transporting materials and electron-transporting materials can be used as the one or more organic compounds.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material, a hole-transporting material, and an electron-transporting material.
  • a hole-transporting material and an electron-transporting material are a combination that easily forms an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance, energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be realized at the same time.
  • the light-emitting layer is formed by a wet method such as an inkjet method, and a solution obtained by dissolving or dispersing the above various materials in a solvent can be used.
  • a solution obtained by dissolving or dispersing the above various materials in a solvent can be used.
  • various organic solvents can be used as the solvent.
  • materials such as polymer materials, low-molecular-weight materials, or dendrimers having desired functions can be mixed and used as they are or as a solution after being dispersed or dissolved in a solvent.
  • the light-emitting layer is to be composed of a polymer
  • a solution obtained by mixing one or more monomers of the polymer material to be deposited is discharged onto the film-forming surface, and is heated or irradiated with energy light to form cross-linking, condensation, polymerization, coordination, salt formation, or the like.
  • the desired film may be formed by forming bonds such as
  • the solution may contain an organic compound having other functions, such as a substance for surface activity or viscosity adjustment.
  • Conjugated polymers non-conjugated polymers, pendant-type polymers, or dye-blend-type polymers can be used as the polymer material.
  • Conjugated polymers include polyparaphenylene vinylene derivatives ((poly(p-phenylenevinylene); PPV), polyalkylthiophene derivatives ((poly(3-alkylthiophene); PAT), polyparaphenylene derivatives (poly(1,4-phenylene ); PPP system), polyfluorene derivatives (poly(9,9-dialkylfluorene); PDAF), or copolymers thereof, etc.
  • pendant type polymers include vinyl polymers, such as polyvinylcarbazole derivatives (polyvinylcarbazole ; PVK) and the like.
  • Organic solvents that can be used as the above solvent include benzene, toluene, xylene, mesitylene, tetrahydrofuran, dioxane, ethanol, methanol, n-propanol, isopropanol, n-butanol, t-butanol, acetonitrile, dimethylsulfoxide, and dimethyl.
  • Various organic solvents such as formamide, chloroform, methylene chloride, carbon tetrachloride, ethyl acetate, hexane, or cyclohexane can be used.
  • the boiling point is preferably 100° C. or higher, more preferably toluene, xylene, or mesitylene.
  • the layer 4430 may be formed by a wet method in addition to the light-emitting layer. Since the layer 4430 can be a common layer, a spin coating method is preferably used as a wet method. Specifically, after forming the lower electrode 672, the layer 4430 can be formed without patterning by a spin coating method or the like.
  • the layer 4430 preferably contains both the skeleton having a high hole-transport property and the material exhibiting an acceptor property.
  • examples of materials exhibiting acceptor properties include sulfonic acid compounds, fluorine compounds, trifluoroacetic acid compounds, propionic acid compounds, metal oxides, and the like.
  • the layer 4430 is formed by a wet method and a mixed solution of monomers is applied, secondary amine and arylsulfonic acid are preferably used as the monomers.
  • a substituted or unsubstituted aryl group having 6 to 14 carbon atoms and a substituted or unsubstituted ⁇ -electron rich heteroaryl group having 6 to 12 carbon atoms can be used.
  • the aryl group for example, a phenyl group, a biphenyl group, a naphthyl group, a fluorenyl group, a phenanthrenyl group, an anthryl group, or the like can be used, and a phenyl group is preferred because of good solubility and low cost.
  • a carbazole skeleton, a pyrrole skeleton, a thiophene skeleton, a furan skeleton, an imidazole skeleton, or the like can be used as the heteroaryl group.
  • some of the amines may be tertiary amines, and it is preferable that the proportion of secondary amines is higher than the proportion of tertiary amines.
  • the number of amines is preferably 1000 or less, more preferably 10 or less, and the molecular weight is preferably 100,000 or less.
  • the compatibility with fluorine-substituted compounds is improved, which is preferable.
  • an organic compound represented by the following general formula (G1) is preferable.
  • Ar 11 to Ar 13 represent hydrogen
  • Ar 14 to Ar 17 represent a substituted or unsubstituted aromatic ring having 6 to 14 carbon atoms
  • Ar 14 to Ar 17 represents a substituted or unsubstituted aromatic ring having 6 to 14 carbon atoms.
  • a benzene ring, a bisbenzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, an anthracene ring, or the like can be used as the aromatic ring having 6 to 14 carbon atoms.
  • Ar 12 and Ar 16 , Ar 14 and Ar 16 , Ar 11 and Ar 14 , Ar 14 and Ar 15 , Ar 15 and Ar 17 , Ar 13 and Ar 17 may be bonded to each other to form a ring.
  • p represents an integer of 0 or more and 1000 or less, preferably 0 or more and 3 or less.
  • the molecular weight of the organic compound represented by General Formula (G1) is preferably 100,000 or less.
  • tertiary amine for example, an organic compound represented by the following general formula (G2) is preferable.
  • Ar 21 to Ar 23 each represent a substituted or unsubstituted aryl group having 6 to 14 carbon atoms, which may be bonded to each other to form a ring.
  • the substituent may be a group in which a plurality of diarylamino groups or carbazolyl groups are linked. Further, it may have an ether bond, a sulfide bond, or a bond via an amine, and when it has a plurality of aryl groups, it is preferred that the bond via these bonds improves the solubility in an organic solvent. Also when having an alkyl group as a substituent, it may be bonded through an ether bond, a sulfide bond, or an amine.
  • organic compounds represented by structural formulas (Am2-1) to (Am2-32) below are preferably used.
  • the organic compounds represented by Structural Formulas (Am2-1) to (Am2-32) below have an NH group.
  • the amine compound can be mixed with the sulfonic acid compound and used in the solution.
  • a sulfonic acid compound When mixed with a sulfonic acid compound, carriers are easily generated and conductivity is improved. Mixing with a sulfonic acid compound is sometimes referred to as p-doping.
  • a secondary amine As the amine compound because a bond can be formed by a dehydration reaction with the mixed sulfonic acid compound.
  • the compound to be mixed with the amine compound is a fluoride
  • a fluoride such as the above structural formulas (Am2-1), (Am2-22) to (Am2-28), or (Am2-31) is used as the amine compound. and the compatibility is improved, which is preferable.
  • a thiophene derivative may be used instead of the secondary amine.
  • Specific examples of thiophene derivatives include organic compounds represented by the following structural formulas (T-1) to (T-4), or polythiophene or poly(3,4-ethylenedioxythiophene) ( PEDOT) is preferred.
  • a sulfonic acid compound is a material that exhibits acceptor properties.
  • Sulfonic acid compounds include arylsulfonic acids.
  • the arylsulfonic acid it is sufficient that it has a sulfo group, and sulfonic acid, sulfonate, alkoxysulfonic acid, halogenated sulfonic acid, or sulfonate anion can be used. You may have a plurality of these sulfo groups.
  • the aryl group of the arylsulfonic acid a substituted or unsubstituted aryl group having 6 or more and 16 or less carbon atoms can be used.
  • aryl group for example, a phenyl group, a biphenyl group, a naphthyl group, a fluorenyl group, a phenanthrenyl group, an anthryl group, or a pyrenyl group can be used.
  • the naphthyl group is preferred because of its good solubility in organic solvents and transportability.
  • the arylsulfonic acid may have multiple aryl groups.
  • the arylsulfonic acid has a fluorine-substituted aryl group, the LUMO level can be adjusted deeply (to a large negative value), which is preferable.
  • the arylsulfonic acid may have an ether bond, a sulfide bond, or a bond via an amine, and when it has multiple aryl groups, via these bonds, the solubility in organic solvents is improved, which is preferable. .
  • the arylsulfonic acid may be bonded via an ether bond, a sulfide bond, or an amine.
  • the arylsulfonic acid may be substituted on the polymer.
  • Polyethylene, nylon, polystyrene, or polyfluorenylene can be used as the polymer, and polystyrene or polyfluorenylene is preferable because of its good conductivity.
  • arylsulfonic acid compound examples are preferably organic compounds represented by structural formulas (S-1) to (S-15) below.
  • Polymers with sulfo groups such as poly(4-styrenesulfonic acid) (PSS) can also be used.
  • PSS poly(4-styrenesulfonic acid)
  • an arylsulfonic acid compound it is possible to accept electrons from a HOMO shallow electron donor (such as an amine compound, a carbazole compound, or a thiophene compound). Alternatively, it can have a hole-transport property.
  • a fluorine compound as the arylsulfonic acid compound, the LUMO level can be adjusted deeper (having a more negative energy level).
  • a tertiary amine may be further added to the mixed solution of the secondary amine and the sulfonic acid compound.
  • Tertiary amines are more electrochemically and photochemically stable than secondary amines and, when mixed, provide good hole transport properties.
  • organic compounds represented by the following structural formulas (Am3-1) to (Am3-7) are preferable.
  • the solution may be appropriately mixed with a material having a hole-transporting property.
  • cyano compounds such as tetracyanoquinodimethane compounds can also be used as electron acceptors.
  • cyano compounds such as tetracyanoquinodimethane compounds can also be used as electron acceptors.
  • F4TCNQ 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane
  • HAT-CN6 dipyrazino[2,3-f:2′,3′-h]quinoxaline-2 , 3,6,7,10,11-hexacarbonitrile
  • the layer has a sufficient hole-transporting property, and the fact that a skeleton such as an amine responsible for the hole-transporting property is not observed means that It is suggested that the above-mentioned monomers combine to form a polymer compound film.
  • the analysis result as described above means that the layer was formed by a wet method.
  • the sulfonic acid compound represented by the structural formula (S-1) or (S-2) is preferable because it has many sulfo groups, can form a three-dimensional bond with the amine compound, and easily stabilizes the film quality. .
  • iridium complex represented by the following structural formula is preferably used as a light-emitting material in the light-emitting element of one embodiment of the present invention. Since the following iridium complexes have alkyl groups, they are easily soluble in organic solvents and easy to prepare a solution, which is preferable.
  • an organic compound layer containing an acceptor material and a donor material may be used as the intermediate layer.
  • the intermediate layer preferably has an organic compound layer containing an acceptor material and an organic compound layer containing a donor material.
  • the organic compound layer containing the acceptor material is preferably formed using the composite material exemplified as the material capable of forming the hole injection layer or the hole transport layer.
  • An acceptor material is a material that can generate holes in an organic compound by causing charge separation between the organic compound and another organic compound having similar LUMO and HOMO level values.
  • an organic acceptor material a compound having an electron-withdrawing group (halogen group or cyano group) such as a quinodimethane derivative, a chloranil derivative, or a hexaazatriphenylene derivative can be used.
  • organic acceptor materials a compound such as HAT-CN, in which an electron-withdrawing group is bound to a condensed aromatic ring having a plurality of heteroatoms, has a high acceptor property and a stable film quality against heat.
  • the [3] radialene derivative having an electron-withdrawing group is preferable because of its extremely high electron-accepting property, specifically ⁇ , ⁇ ', ⁇ '.
  • alkali metal compounds as the above compounds include oxides such as lithium oxide and halides, and further alkali metal compounds include carbonates such as lithium carbonate and cesium carbonate.
  • Alkaline earth metal compounds as the above compounds include oxides, halides, or carbonates, and compounds of rare earth metals include oxides, halides, or carbonates.
  • the organic compound layer containing the donor material can be formed using the same material as the material constituting the electron transport layer or the electron injection layer described above.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described in this specification and the like.
  • a pixel circuit PIX1 shown in FIG. 12A has a transistor M1, a transistor M2, a capacitor C1, and a light emitting element EL.
  • a wiring SL, a wiring GL, a wiring AL, and a wiring CL are electrically connected to the pixel circuit PIX1.
  • the transistor M1 has a gate electrically connected to the wiring GL, one of the source and the drain electrically connected to the wiring SL, and the other electrically connected to the gate of the transistor M2 and one electrode of the capacitor C1.
  • One of the source and the drain of the transistor M2 is electrically connected to the wiring AL, and the other is electrically connected to the anode of the light emitting element EL.
  • the other electrode of the capacitor C1 is electrically connected to the anode of the light emitting element EL.
  • the cathode of the light emitting element EL is electrically connected to the wiring CL.
  • the transistor M1 can also be called a selection transistor and functions as a switch for controlling selection/non-selection of pixels.
  • the transistor M2 can also be called a driving transistor and has a function of controlling current flowing through the light emitting element EL.
  • the capacitor C1 functions as a holding capacitor and has a function of holding the gate potential of the transistor M2.
  • a capacitive element such as an MIM capacitance may be applied, or capacitance between wirings, gate capacitance of a transistor, or the like may be used as the capacitance C1.
  • a source signal is supplied to the wiring SL.
  • the wiring SL can be formed using the same conductive layer as the conductive layer functioning as the source or drain of the transistor.
  • a gate signal is supplied to the wiring GL.
  • the wiring GL can be formed using the same conductive layer as the conductive layer functioning as the gate of the transistor.
  • a constant potential is supplied to each of the wiring AL and the wiring CL.
  • the anode side of the light emitting element EL can be set at a high potential and the cathode side can be set at a lower potential than the anode side, and the anode can correspond to the anode and the cathode to the cathode.
  • the pixel circuit PIX2 shown in FIG. 12B has a configuration in which a transistor M3 is added to the pixel circuit PIX1.
  • a wiring V0 is electrically connected to the pixel circuit PIX2.
  • the transistor M3 has a gate electrically connected to the wiring GL, one of the source and the drain electrically connected to the anode of the light emitting element EL, and the other electrically connected to the wiring V0.
  • a constant potential is applied to the wiring V0 when data is written to the pixel circuit PIX2. Thereby, variations in the gate-source voltage of the transistor M3 can be suppressed.
  • a pixel circuit PIX3 shown in FIG. 12C is an example in which a pair of transistors whose gates are electrically connected are applied to the transistor M1 and the transistor M2 of the pixel circuit PIX1.
  • a pixel circuit PIX4 shown in FIG. 12D is an example in which a transistor having a pair of gates electrically connected to the pixel circuit PIX2 is applied. This can increase the current that the transistor can pass. Note that although a transistor having a pair of gates electrically connected to each other is used as all the transistors here, the present invention is not limited to this. Alternatively, a transistor having a pair of gates and electrically connected to different wirings may be used. For example, reliability can be improved by using a transistor in which one of the gates and the source are electrically connected.
  • a pixel circuit PIX5 shown in FIG. 13A has a configuration in which a transistor M4 is added to the above PIX2.
  • the pixel circuit PIX5 is electrically connected to three wirings (wiring GL1, wiring GL2, and wiring GL3) functioning as gate lines.
  • the transistor M4 has a gate electrically connected to the wiring GL3, one of the source and the drain electrically connected to the gate of the transistor M2, and the other electrically connected to the wiring V0.
  • a gate of the transistor M1 is electrically connected to the wiring GL1, and a gate of the transistor M3 is electrically connected to the wiring GL2.
  • the wiring V0 may be arranged so as to cross the wiring AL.
  • Such a pixel circuit is suitable for a display method in which display periods and off periods are alternately provided.
  • a pixel circuit PIX6 shown in FIG. 13B is an example in which a capacitor C2 is added to the pixel circuit PIX5. Capacitor C2 functions as a holding capacitor.
  • a pixel circuit PIX7 shown in FIG. 13C and a pixel circuit PIX8 shown in FIG. 13D are examples in which a transistor having a pair of gates is applied to the pixel circuit PIX5 or pixel circuit PIX6, respectively.
  • a transistor having a pair of gates electrically connected to each other is used as the transistor M1, the transistor M3, and the transistor M4, and a transistor having one gate electrically connected to a source is used as the transistor M2.
  • Example of driving method An example of a method for driving a display device to which the pixel circuit PIX5 is applied will be described below. A similar driving method can be applied to the pixel circuits PIX6, PIX7, and PIX8.
  • FIG. 14 shows a timing chart relating to a method of driving a display device to which the pixel circuit PIX5 is applied.
  • FIG. 14 shows timings of signals supplied to the wiring SL functioning as a source line.
  • an example of a driving method is shown in which one horizontal period is divided into a lighting period and a lighting-out period for display. Further, the horizontal period of the k-th row and the horizontal period of the k+1-th row are shifted by the selection period of the gate line.
  • a high-level potential is applied to the wirings GL1[k] and GL2[k], and a source signal is applied to the wiring SL. Accordingly, the transistor M1 and the transistor M3 are brought into conduction, and a potential corresponding to the source signal is written from the wiring SL to the gate of the transistor M2. After that, a low-level potential is applied to the wirings GL1[k] and GL2[k], so that the transistors M1 and M3 are brought out of conduction, and the gate potential of the transistor M2 is held.
  • a high-level potential is applied to the wiring GL2[k] and the wiring GL3[k] in the off period of the k-th row.
  • the transistor M3 and the transistor M4 are brought into a conductive state, and the same potential is supplied to the source and gate of the transistor M2, so that almost no current flows through the transistor M2.
  • the light emitting element EL is extinguished. All pixels located in the k-th row are turned off. The pixels in the k-th row are kept off until the next lighting period.
  • a driving method in which a light-off period is provided during one horizontal period instead of lighting all over one horizontal period can be called duty driving.
  • duty driving an afterimage phenomenon when displaying moving images can be reduced, so that a display device with high moving image display performance can be realized.
  • VR motion sickness can be alleviated by reducing afterimages.
  • the ratio of the lighting period to one horizontal period can be called a duty ratio.
  • the duty ratio can be freely set, and can be appropriately adjusted within a range of, for example, higher than 0% and 100% or less.
  • the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment includes a relatively large screen such as a television device, a desktop or notebook personal computer, a computer monitor, a digital signage, a large game machine such as a pachinko machine, or the like. In addition to electronic devices, it can be used for display parts of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch terminals, tablet terminals, personal digital assistants, and sound reproducing devices.
  • FIG. 15 shows a perspective view of the display device 400A
  • FIG. 16A shows a cross-sectional view of the display device 400A.
  • the display device 400A has a configuration in which a substrate 452 and a substrate 451 are bonded together.
  • the substrate 452 is clearly indicated by dashed lines.
  • the display device 400A includes a display portion 462, a circuit 464, wirings 465, and the like.
  • FIG. 15 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400A. Therefore, the configuration shown in FIG. 15 can also be called a display module including the display device 400A, an IC (integrated circuit), and an FPC.
  • a scanning line driver circuit can be used.
  • the wiring 465 has a function of supplying signals and power to the display portion 462 and the circuit 464 .
  • the signal and power are input to the wiring 465 from the outside through the FPC 472 or input to the wiring 465 from the IC 473 .
  • FIG. 15 shows an example in which an IC 473 is provided on a substrate 451 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like.
  • a COG Chip On Glass
  • COF Chip on Film
  • the IC 473 for example, an IC having a scanning line driver circuit, a signal line driver circuit, or the like can be applied.
  • the display device 400A and the display module may be configured without an IC.
  • the IC may be mounted on the FPC by the COF method or the like.
  • FIG. 16A shows an example of a cross-section of the display device 400A when part of the region including the FPC 472, part of the circuit 464, part of the display section 462, and part of the region including the end are cut. show.
  • a display device 400A illustrated in FIG. 16A includes a transistor 201 and a transistor 205, a light-emitting element 430a that emits red light, a light-emitting element 430b that emits green light, and a light-emitting element 430b that emits blue light. It has an element 430c and the like.
  • the light-emitting elements exemplified in Embodiments 1 to 3 can be applied to the light-emitting elements 430a, 430b, and 430c.
  • the three sub-pixels include three combinations of R, G, and B, yellow (Y), and cyan. (C), and magenta (M).
  • the four sub-pixels include four combinations of R, G, B, and white (W), four combinations of R, G, B, and Y, and the like. be done.
  • a pixel can have three or more sub-pixels as a minimum unit capable of full-color display.
  • Protective layer 416 and substrate 452 are adhered via adhesive layer 442 .
  • a solid sealing structure, a hollow sealing structure, or the like can be applied to the sealing of the light emitting element.
  • the space 443 surrounded by the substrate 452, the adhesion layer 442, and the substrate 451 is filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure.
  • the adhesive layer 442 may be provided so as to overlap with the light emitting element.
  • a space 443 surrounded by the substrate 452 , the adhesive layer 442 , and the substrate 451 may be filled with a resin different from that of the adhesive layer 442 .
  • the light emitting elements 430 a , 430 b , 430 c have an optical adjustment layer between the pixel electrode and the hole injection layer 431 .
  • the light emitting element 430a has an optical adjustment layer 426a
  • the light emitting element 430b has an optical adjustment layer 426b
  • the light emitting element 430c has an optical adjustment layer 426c.
  • Embodiment Modes 1 to 3 can be referred to for details of the light-emitting element.
  • the pixel electrodes 411a, 411b, and 411c are connected to the conductive layer 222b of the transistor 205 through openings provided in the insulating layer 214, respectively.
  • Edges of the pixel electrode and the optical adjustment layer are covered with an insulating layer 421 with a hole injection layer 431 interposed therebetween.
  • the hole injection layer 431 may be provided over the entire surface of the display portion 462, or may be separated for each sub-pixel region.
  • a layer 435 having an electron-transporting layer and an electron-injecting layer is provided over the light-emitting layer provided in the opening of the insulating layer 421 and the insulating layer 421 , and a counter electrode 418 is provided over the layer 435 .
  • the pixel electrode contains a material that reflects visible light
  • the counter electrode 418 contains a material that transmits visible light.
  • Light emitted by the light emitting element is emitted to the substrate 452 side.
  • a material having high visible light transmittance is preferably used for the substrate 452 .
  • the insulating layer 421 may have a laminated structure of an inorganic insulating film and an organic insulating film.
  • the inorganic insulating film is preferably the lower layer.
  • the inorganic insulating film is provided on the hole-injection layer 431 side; It is possible to suppress adverse effects on the hole injection layer 431, which may be a concern in some cases.
  • Both the transistor 201 and the transistor 205 are formed over the substrate 451 . These transistors can be made with the same material and the same process.
  • An insulating layer 211 , an insulating layer 213 , an insulating layer 215 , and an insulating layer 214 are provided in this order over the substrate 451 .
  • Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
  • Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
  • An insulating layer 215 is provided over the transistor.
  • An insulating layer 214 is provided over the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering a transistor are not limited, and each may have a single layer or two or more layers.
  • a material into which impurities such as water and hydrogen are difficult to diffuse is preferably used for at least one insulating layer that covers the transistor. This allows the insulating layer to function as a barrier layer. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.
  • An inorganic insulating film is preferably used for each of the insulating layers 211 , 213 , and 215 .
  • the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the insulating films described above may be laminated and used.
  • the organic insulating film preferably has openings near the ends of the display device 400A. As a result, it is possible to prevent impurities from entering through the organic insulating film from the end portion of the display device 400A.
  • the organic insulating film may be formed so that the edges of the organic insulating film are located inside the edges of the display device 400A so that the organic insulating film is not exposed at the edges of the display device 400A.
  • An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer.
  • materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
  • An opening is formed in the insulating layer 214 in a region 228 shown in FIG. 16A.
  • the transistors 201 and 205 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as a source and a drain, a semiconductor layer 231, and an insulating layer functioning as a gate insulating layer. It has a layer 213 and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.
  • the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
  • the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
  • the structure of the transistor included in the display device of this embodiment there is no particular limitation on the structure of the transistor included in the display device of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 201 and 205 .
  • a transistor may be driven by connecting two gates and applying the same signal to them.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • crystallinity of a semiconductor material used for a transistor there is no particular limitation on the crystallinity of a semiconductor material used for a transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having a crystallinity other than a single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystal region in part) can be used. semiconductor) may be used. A single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration in transistor characteristics can be suppressed.
  • a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
  • the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
  • the semiconductor layer of the transistor may comprise silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, monocrystalline silicon, etc.).
  • the semiconductor layer includes, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, one or more selected from hafnium, tantalum, tungsten, and magnesium) and zinc.
  • M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used for the semiconductor layer.
  • the In atomic ratio in the In-M-Zn oxide is preferably equal to or higher than the M atomic ratio.
  • the transistor included in the circuit 464 and the transistor included in the display portion 462 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 464 may all have the same structure, or may have two or more types.
  • the plurality of transistors included in the display portion 462 may all have the same structure, or may have two or more types.
  • a connection portion 204 is provided in a region of the substrate 451 where the substrate 452 does not overlap.
  • the wiring 465 is electrically connected to the FPC 472 through the conductive layer 466 and the connection layer 242 .
  • the conductive layer 466 shows an example of a laminated structure of a conductive film obtained by processing the same conductive film as the pixel electrode and a conductive film obtained by processing the same conductive film as the optical adjustment layer. .
  • the conductive layer 466 is exposed on the upper surface of the connecting portion 204 . Thereby, the connecting portion 204 and the FPC 472 can be electrically connected via the connecting layer 242 .
  • a light shielding layer 417 is preferably provided on the surface of the substrate 452 on the substrate 451 side.
  • various optical members can be arranged outside the substrate 452 .
  • optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, light collecting films, and the like.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses scratches due to use, a shock absorption layer, etc. are arranged on the outside of the substrate 452.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses scratches due to use, a shock absorption layer, etc. are arranged.
  • the protective layer 416 that covers the light-emitting element, entry of impurities such as water into the light-emitting element can be suppressed, and the reliability of the light-emitting element can be improved.
  • the insulating layer 215 and the protective layer 416 are in contact with each other through the opening of the insulating layer 214 in the region 228 near the edge of the display device 400A.
  • the inorganic insulating film included in the insulating layer 215 and the inorganic insulating film included in the protective layer 416 are in contact with each other. This can prevent impurities from entering the display section 462 from the outside through the organic insulating film. Therefore, the reliability of the display device 400A can be improved.
  • FIG. 16B shows an example in which the protective layer 416 has a three-layer structure.
  • the protective layer 416 has an inorganic insulating layer 416a on the light emitting element 430c, an organic insulating layer 416b on the inorganic insulating layer 416a, and an inorganic insulating layer 416c on the organic insulating layer 416b.
  • the end of the inorganic insulating layer 416a and the end of the inorganic insulating layer 416c extend outside the end of the organic insulating layer 416b and are in contact with each other.
  • the inorganic insulating layer 416a is in contact with the insulating layer 215 (inorganic insulating layer) through the opening of the insulating layer 214 (organic insulating layer). Accordingly, the insulating layer 215 and the protective layer 416 can surround the light emitting element, so that the reliability of the light emitting element can be improved.
  • the protective layer 416 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the end portion of the inorganic insulating film extends further outward than the end portion of the organic insulating film.
  • Glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like can be used for the substrates 451 and 452, respectively.
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting element is extracted.
  • the flexibility of the display device can be increased.
  • a polarizing plate may be used as the substrate 451 or the substrate 452 .
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethylmethacrylate resins, polycarbonate (PC) resins, and polyether resins are used, respectively.
  • PES resin Sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, or the like can be used.
  • PES polytetyrene resin
  • polyamideimide resin polyurethane resin
  • polyvinyl chloride resin polyvinylidene chloride resin
  • polypropylene resin polytetrafluoroethylene (PTFE) resin
  • PTFE resin polytetrafluoroethylene
  • ABS resin cellulose nanofiber, or the like
  • One or both of the substrates 451 and 452 may be made of glass having a thickness sufficient to be flexible.
  • a substrate having high optical isotropy is preferably used as the substrate of the display device.
  • a substrate with high optical isotropy has small birefringence (it can be said that the amount of birefringence is small).
  • the absolute value of the retardation (retardation) value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.
  • Films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.
  • TAC triacetyl cellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • the film when a film is used as the substrate, the film may absorb water, which may cause a change in shape such as wrinkling of the display panel. Therefore, it is preferable to use a film having a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • connection layer 242 an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • materials that can be used for conductive layers such as various wirings and electrodes constituting display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, Examples include metals such as tantalum and tungsten, and alloys containing these metals as main components. A film containing these materials can be used as a single layer or as a laminated structure.
  • a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene
  • metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials can be used.
  • a nitride of the metal material eg, titanium nitride
  • it is preferably thin enough to have translucency.
  • a stacked film of any of the above materials can be used as the conductive layer.
  • a laminated film of a silver-magnesium alloy and indium tin oxide because the conductivity can be increased.
  • conductive layers such as various wirings and electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.
  • Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
  • FIG. 17 shows a cross-sectional view of the display device 400B.
  • a perspective view of the display device 400B is the same as that of the display device 400A (FIG. 15).
  • FIG. 17 shows an example of a cross section of the display device 400B when part of the region including the FPC 472, part of the circuit 464, and part of the display portion 462 are cut. Note that the description of the same parts as those of the display device 400A may be omitted.
  • the display device 400B has a structure in which a substrate 452 and a substrate 451 are bonded together.
  • the display device 400B includes a display portion 462, a circuit 464, wirings 465, and the like. Therefore, the display device 400B shown in FIG. 17 can also be called a display module including the display device 400B, an IC (integrated circuit), and an FPC.
  • a scanning line driver circuit can be used.
  • the wiring 465 has a function of supplying signals and power to the display portion 462 and the circuit 464 .
  • the signal and power are input to the wiring 465 from the outside through the FPC 472 or input to the wiring 465 from the IC 473 .
  • the display module shows an example in which an IC 473 is provided on a substrate 451 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like.
  • IC 473 for example, an IC having a scanning line driver circuit, a signal line driver circuit, or the like can be applied.
  • the display device 400B and the display module may be configured without an IC.
  • the IC may be mounted on the FPC by the COF method or the like.
  • FIG. 17 shows an example of a cross section of the display device 400B when part of the region including the FPC 472, part of the circuit 464, part of the display portion 462, and part of the region including the end are cut. show.
  • the display device 400B illustrated in FIG. 17 includes a transistor 201 and a transistor 205, a light-emitting element 430a that emits red light, a light-emitting element 430b that emits green light, and a light-emitting element 430b that emits blue light. It has an element 430c and the like.
  • the light-emitting elements exemplified in Embodiments 1 to 3 can be applied to the light-emitting elements 430a, 430b, and 430c.
  • the three sub-pixels are R, G, and B sub-pixels, and yellow (Y). , cyan (C), and magenta (M).
  • the four sub-pixels include R, G, B, and white (W) sub-pixels, and R, G, B, and Y four-color sub-pixels. be done.
  • Protective layer 416 and substrate 452 are adhered via adhesive layer 442 .
  • a solid sealing structure, a hollow sealing structure, or the like can be applied to the sealing of the light emitting element.
  • the space 443 surrounded by the substrate 452, the adhesive layer 442, and the substrate 451 is filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure.
  • the adhesive layer 442 may be provided so as to overlap with the light emitting element.
  • a space 443 surrounded by the substrate 452 , the adhesive layer 442 , and the substrate 451 may be filled with a resin different from that of the adhesive layer 442 .
  • the light emitting elements 430 a , 430 b , 430 c have an optical adjustment layer between the pixel electrode and the hole injection layer 431 .
  • the light emitting element 430a has an optical adjustment layer 426a
  • the light emitting element 430b has an optical adjustment layer 426b
  • the light emitting element 430c has an optical adjustment layer 426c.
  • Embodiment Modes 1 to 3 can be referred to for details of the light-emitting element.
  • the pixel electrodes 411a, 411b, and 411c are connected to the conductive layer 222b of the transistor 205 through openings provided in the insulating layer 214, respectively.
  • Edges of the pixel electrode and the optical adjustment layer are covered with an insulating layer 421 with a hole injection layer 431 interposed therebetween.
  • the hole injection layer 431 may be provided over the entire surface of the display portion 462, or may be separated for each sub-pixel region.
  • a layer 435 having an electron-transporting layer and an electron-injecting layer is provided over the light-emitting layer provided in the opening of the insulating layer 421 and the insulating layer 421 , and a counter electrode 418 is provided over the layer 435 .
  • the pixel electrode contains a material that transmits visible light
  • the counter electrode 418 contains a material that reflects visible light.
  • Light emitted by the light emitting element is emitted to the substrate 454 side.
  • a material having high visible light transmittance is preferably used for the substrate 454 .
  • the insulating layer 421 may have a laminated structure of an inorganic insulating film and an organic insulating film.
  • the inorganic insulating film is preferably the lower layer.
  • the inorganic insulating film is provided on the hole-injection layer 431 side; It is possible to suppress adverse effects on the hole injection layer 431, which may be a concern in some cases.
  • Both the transistor 201 and the transistor 205 are formed over the substrate 451 . These transistors can be made with the same material and the same process.
  • An insulating layer 211 , an insulating layer 213 , an insulating layer 215 , and an insulating layer 214 are provided in this order over the substrate 451 .
  • Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
  • Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
  • An insulating layer 215 is provided over the transistor.
  • An insulating layer 214 is provided over the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering a transistor are not limited, and each may have a single layer or two or more layers.
  • a material into which impurities such as water and hydrogen are difficult to diffuse is preferably used for at least one insulating layer that covers the transistor. This allows the insulating layer to function as a barrier layer. With such a structure, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.
  • An inorganic insulating film is preferably used for each of the insulating layers 211 , 213 , and 215 .
  • the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the insulating films described above may be laminated and used.
  • the organic insulating film preferably has openings near the ends of the display device 400B. As a result, it is possible to prevent impurities from entering through the organic insulating film from the end portion of the display device 400B.
  • the organic insulating film may be formed so that the edges of the organic insulating film are located inside the edges of the display device 400B so that the organic insulating film is not exposed at the edges of the display device 400B.
  • An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer.
  • materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
  • An opening is formed in the insulating layer 214 in a region 228 shown in FIG. As a result, even when an organic insulating film is used for the insulating layer 214 , it is possible to prevent impurities from entering the display section 462 from the outside through the insulating layer 214 . Therefore, the reliability of the display device 400B can be improved.
  • the transistors 201 and 205 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as sources and drains, a semiconductor layer 231, and an insulating layer functioning as a gate insulating layer. It has a layer 213 and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.
  • the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
  • the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
  • the structure of the transistor included in the display device of this embodiment there is no particular limitation on the structure of the transistor included in the display device of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 201 and 205 .
  • a transistor may be driven by connecting two gates and applying the same signal to them.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • crystallinity of a semiconductor material used for a transistor there is no particular limitation on the crystallinity of a semiconductor material used for a transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having a crystallinity other than a single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystal region in part) can be used. semiconductor) may be used. A single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration in transistor characteristics can be suppressed.
  • a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
  • the display device of this embodiment preferably uses a transistor including a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).
  • the semiconductor layer of the transistor may comprise silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, monocrystalline silicon, etc.).
  • the semiconductor layer includes, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, one or more selected from hafnium, tantalum, tungsten, and magnesium) and zinc.
  • M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used for the semiconductor layer.
  • the In atomic ratio in the In-M-Zn oxide is preferably equal to or higher than the M atomic ratio.
  • the transistor included in the circuit 464 and the transistor included in the display portion 462 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 464 may all have the same structure, or may have two or more types.
  • the plurality of transistors included in the display portion 462 may all have the same structure, or may have two or more types.
  • a connection portion 204 is provided in a region of the substrate 451 where the substrate 452 does not overlap.
  • the wiring 465 is electrically connected to the FPC 472 through the conductive layer 466 and the connection layer 242 .
  • the conductive layer 466 shows an example of a laminated structure of a conductive film obtained by processing the same conductive film as the pixel electrode and a conductive film obtained by processing the same conductive film as the optical adjustment layer. .
  • the conductive layer 466 is exposed on the upper surface of the connecting portion 204 . Thereby, the connecting portion 204 and the FPC 472 can be electrically connected via the connecting layer 242 .
  • a light shielding layer 417 is preferably provided on the surface of the substrate 452 on the substrate 451 side.
  • various optical members can be arranged outside the substrate 452 .
  • optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, light collecting films, and the like.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. are arranged on the outside of the substrate 452.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. are arranged.
  • the protective layer 416 that covers the light-emitting element, entry of impurities such as water into the light-emitting element can be suppressed, and the reliability of the light-emitting element can be improved.
  • the insulating layer 215 and the protective layer 416 are in contact with each other through the opening of the insulating layer 214 in the region 228 near the edge of the display device 400B.
  • the inorganic insulating film included in the insulating layer 215 and the inorganic insulating film included in the protective layer 416 are in contact with each other. This can prevent impurities from entering the display section 462 from the outside through the organic insulating film. Therefore, the reliability of the display device 400B can be improved.
  • the protective layer 416 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the end portion of the inorganic insulating film extends further outward than the end portion of the organic insulating film.
  • Glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like can be used for the substrates 451 and 452, respectively.
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting element is extracted.
  • the flexibility of the display device can be increased.
  • a polarizing plate may be used as the substrate 451 or the substrate 452 .
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethylmethacrylate resins, polycarbonate (PC) resins, and polyether resins are used.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • acrylic resins acrylic resins
  • polyimide resins polymethylmethacrylate resins
  • PC polycarbonate
  • polyether resins polyether resins
  • PES resin Sulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, or the like can be used.
  • PES polytetyrene resin
  • polyamideimide resin polyurethane resin
  • polyvinyl chloride resin polyvinylidene chloride resin
  • polypropylene resin polytetrafluoroethylene (PTFE) resin
  • PTFE resin polytetrafluoroethylene
  • ABS resin cellulose nanofiber, or the like
  • One or both of the substrates 451 and 452 may be made of glass having a thickness sufficient to be flexible.
  • a substrate having high optical isotropy is preferably used as the substrate of the display device.
  • a substrate with high optical isotropy has small birefringence (it can be said that the amount of birefringence is small).
  • the absolute value of the retardation (retardation) value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.
  • Films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.
  • TAC triacetyl cellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • the film when a film is used as the substrate, the film may absorb water, which may cause a change in shape such as wrinkling of the display panel. Therefore, it is preferable to use a film having a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • connection layer 242 an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • materials that can be used for conductive layers such as various wirings and electrodes constituting display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, Examples include metals such as tantalum and tungsten, and alloys containing these metals as main components. A film containing these materials can be used as a single layer or as a laminated structure.
  • a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene
  • metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials can be used.
  • a nitride of the metal material eg, titanium nitride
  • it is preferably thin enough to have translucency.
  • a stacked film of any of the above materials can be used as the conductive layer.
  • a laminated film of a silver-magnesium alloy and indium tin oxide because the conductivity can be increased.
  • conductive layers such as various wirings and electrodes that constitute a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.
  • Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resins and epoxy resins, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
  • FIG. 18A shows a cross-sectional view of the display device 400C.
  • a perspective view of the display device 400C is the same as that of the display device 400A (FIG. 15).
  • FIG. 18A shows an example of a cross section of the display device 400C when part of the region including the FPC 472, part of the circuit 464, and part of the display portion 462 are cut.
  • FIG. 18A shows an example of a cross section of the display section 462, in particular, a region including the light emitting element 430b that emits green light and the light emitting element 430c that emits blue light. Note that the description of the same parts as those of the display device 400A may be omitted.
  • a display device 400C illustrated in FIG. 18A includes the transistor 202, the transistor 210, the light-emitting elements 430b, 430c, and the like between the substrate 453 and the substrate 454.
  • FIG. 18A includes the transistor 202, the transistor 210, the light-emitting elements 430b, 430c, and the like between the substrate 453 and the substrate 454.
  • FIG. 18A includes the transistor 202, the transistor 210, the light-emitting elements 430b, 430c, and the like between the substrate 453 and the substrate 454.
  • the substrate 454 and protective layer 416 are adhered via an adhesive layer 442 .
  • the adhesive layer 442 is provided so as to overlap each of the light emitting elements 430b and 430c, and a solid sealing structure is applied to the display device 400C.
  • the substrate 453 and the insulating layer 212 are bonded together by an adhesive layer 455 .
  • a method for manufacturing the display device 400C first, a manufacturing substrate provided with the insulating layer 212, each transistor, each light-emitting element, and the like, and the substrate 454 provided with the light shielding layer 417 are bonded together with the adhesive layer 442. FIG. Then, the formation substrate is peeled off and a substrate 453 is attached to the exposed surface, so that each component formed over the formation substrate is transferred to the substrate 453 .
  • Each of the substrates 453 and 454 preferably has flexibility. Thereby, the flexibility of the display device 400C can be enhanced.
  • an inorganic insulating film that can be used for the insulating layers 211, 213, and 215 can be used.
  • the pixel electrode is connected to the conductive layer 222b included in the transistor 210 through an opening provided in the insulating layer 214.
  • the conductive layer 222 b is connected to the low-resistance region 231 n through openings provided in the insulating layers 215 and 225 .
  • the transistor 210 has a function of controlling driving of the light emitting element.
  • the pixel electrode 411 is connected to the conductive layer 222b included in the transistor 210 through an opening provided in the insulating layer 214 .
  • An end portion of the pixel electrode 411 is covered with an insulating layer 421 with a hole injection layer 431 interposed therebetween.
  • the hole injection layer 431 may be provided over the entire surface of the display portion 462, or may be separated for each sub-pixel region.
  • a layer 435 having an electron-transporting layer and an electron-injecting layer is provided over the light-emitting layer provided in the opening of the insulating layer 421 and the insulating layer 421 , and a counter electrode 418 is provided over the layer 435 .
  • the pixel electrode 411 contains a material that reflects visible light
  • the counter electrode 418 contains a material that transmits visible light.
  • Light emitted by the light emitting elements 430b and 430c is emitted to the substrate 454 side.
  • a material having high visible light transmittance is preferably used for the substrate 454 .
  • connection portion 204 is provided in a region of the substrate 453 where the substrate 454 does not overlap.
  • the wiring 465 is electrically connected to the FPC 472 through the conductive layer 466 and the connection layer 242 .
  • the conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. Thereby, the connecting portion 204 and the FPC 472 can be electrically connected via the connecting layer 242 .
  • the transistors 202 and 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer having a channel formation region 231i and a pair of low-resistance regions 231n, and one of the pair of low-resistance regions 231n.
  • a connecting conductive layer 222a, a conductive layer 222b connecting to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223 are provided.
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
  • the insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.
  • the conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 215, respectively.
  • One of the conductive layers 222a and 222b functions as a source and the other functions as a drain.
  • FIG. 18A shows an example in which an insulating layer 225 covers the top and side surfaces of the semiconductor layer.
  • the conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively.
  • the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n.
  • the structure shown in FIG. 18B can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask.
  • the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low resistance region 231n through openings in the insulating layer 215, respectively.
  • an insulating layer 218 may be provided to cover the transistor.
  • FIG. 19A shows a cross-sectional view of the display device 400D.
  • the perspective view of the display device 400D is the same as that of the display device 400A (FIG. 15), and the description of the same parts as the display device 400A is omitted.
  • the display device 400D differs from the display device 400A in that it has a hole transport layer 432 on the hole injection layer 431, and the rest of the configuration is the same as that of the display device 400A. omitted.
  • the display device 400D has the hole-transport layer 432 on the hole-injection layer 431, the ends of the pixel electrode and the optical adjustment layer are separated by the insulating layer 421 through the hole-injection layer 431 and the hole-transport layer 432. covered.
  • the hole injection layer 431 and the hole transport layer 432 may be provided over the entire surface of the display portion 462, or may be separated for each sub-pixel region.
  • the insulating layer 421 may have a laminated structure of an inorganic insulating film and an organic insulating film.
  • the inorganic insulating film is preferably the lower layer.
  • the inorganic insulating film is provided on the hole-transport layer 432 side; It is possible to suppress adverse effects on the hole transport layer 432 which may be a concern in some cases.
  • FIG. 19B shows an example in which the protective layer 416 has a three-layer structure.
  • the display device 400D differs from the display device 400A in that it has a hole transport layer 432 on the hole injection layer 431, and the rest of the configuration is the same as that of the display device 400A. .
  • FIG. 20 shows a cross-sectional view of the display device 400E.
  • the perspective view of the display device 400E is the same as that of the display device 400A (FIG. 15), and the description of the same parts as the display device 400A is omitted.
  • the display device 400D differs from the display device 400A in that it has a hole transport layer 432 on the hole injection layer 431, and the rest of the configuration is the same as that of the display device 400A. omitted.
  • the display device 400E differs from the display device 400B in that it has a hole transport layer 432 on the hole injection layer 431, and the rest of the configuration is the same as that of the display device 400B.
  • the display device 400E has the hole transport layer 432 on the hole injection layer 431, the edge of the pixel electrode is covered with the insulating layer 421 via the hole injection layer 431 and the hole transport layer 432. .
  • the hole injection layer 431 and the hole transport layer 432 may be provided over the entire surface of the display portion 462, or may be separated for each sub-pixel region.
  • the insulating layer 421 may have a laminated structure of an inorganic insulating film and an organic insulating film.
  • the inorganic insulating film is preferably the lower layer.
  • the inorganic insulating film is provided on the hole-transport layer 432 side; It is possible to suppress adverse effects on the hole transport layer 432 which may be a concern in some cases.
  • FIG. 21A shows a cross-sectional view of the display device 400F.
  • the perspective view of the display device 400F is the same as that of the display device 400A (FIG. 15), and the description of the same parts as the display device 400A is omitted.
  • the display device 400D differs from the display device 400A in that it has a hole transport layer 432 on the hole injection layer 431, and the rest of the configuration is the same as that of the display device 400A. omitted.
  • the display device 400F differs from the display device 400C in that it has a hole transport layer 432 on the hole injection layer 431, and the rest of the configuration is the same as that of the display device 400C.
  • the display device 400 ⁇ /b>F has the hole transport layer 432 on the hole injection layer 431 , the edge of the pixel electrode 411 is covered with the insulating layer 421 via the hole injection layer 431 and the hole transport layer 432 .
  • the hole injection layer 431 and the hole transport layer 432 may be provided over the entire surface of the display portion 462, or may be separated for each sub-pixel region.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described in this specification and the like.
  • the metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition to these, aluminum, gallium, yttrium, tin and the like are preferably contained. In addition, one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained. .
  • the metal oxide is formed by sputtering, chemical vapor deposition (CVD) such as metal organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD). It can be formed by a layer deposition method or the like.
  • CVD chemical vapor deposition
  • MOCVD metal organic chemical vapor deposition
  • ALD atomic layer deposition
  • Crystal structures of oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal. (poly crystal) and the like.
  • the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum.
  • XRD X-ray diffraction
  • it can be evaluated using an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement.
  • GIXD Gram-Incidence XRD
  • the GIXD method is also called a thin film method or a Seemann-Bohlin method.
  • the peak shape of the XRD spectrum is almost symmetrical.
  • the peak shape of the XRD spectrum is left-right asymmetric.
  • the asymmetric shape of the peaks in the XRD spectra demonstrates the presence of crystals in the film or substrate. In other words, the film or substrate cannot be said to be in an amorphous state unless the shape of the peaks in the XRD spectrum is symmetrical.
  • the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a nanobeam electron diffraction pattern) observed by nano beam electron diffraction (NBED).
  • a diffraction pattern also referred to as a nanobeam electron diffraction pattern
  • NBED nano beam electron diffraction
  • a halo is observed in the diffraction pattern of a quartz glass substrate, and it can be confirmed that the quartz glass is in an amorphous state.
  • a spot-like pattern is observed instead of a halo. Therefore, it is presumed that the IGZO film deposited at room temperature is neither crystalline nor amorphous, but in an intermediate state and cannot be concluded to be in an amorphous state.
  • oxide semiconductors may be classified differently from the above when their structures are focused. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.
  • CAAC-OS is an oxide semiconductor that includes a plurality of crystal regions, and the c-axes of the plurality of crystal regions are oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction to the formation surface of the CAAC-OS film, or the normal direction to the surface of the CAAC-OS film.
  • a crystalline region is a region having periodicity in atomic arrangement. If the atomic arrangement is regarded as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement.
  • CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and the region may have strain.
  • the strain refers to a portion where the orientation of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in a region where a plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and has no obvious orientation in the ab plane direction.
  • each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm).
  • the maximum diameter of the crystalline region is less than 10 nm.
  • the size of the crystal region may be about several tens of nanometers.
  • CAAC-OS contains indium (In) and oxygen.
  • a tendency to have a layered crystal structure also referred to as a layered structure in which a layer (hereinafter referred to as an In layer) and a layer containing the element M, zinc (Zn), and oxygen (hereinafter referred to as a (M, Zn) layer) are stacked.
  • the (M, Zn) layer may contain indium.
  • the In layer contains the element M.
  • the In layer may contain Zn.
  • the layered structure is observed as a lattice image in, for example, a high-resolution TEM (Transmission Electron Microscope) image.
  • a plurality of bright points are observed in the electron beam diffraction pattern of the CAAC-OS film.
  • a certain spot and another spot are observed at point-symmetrical positions with respect to the spot of the incident electron beam that has passed through the sample (also referred to as a direct spot) as the center of symmetry.
  • the lattice arrangement in the crystal region is basically a hexagonal lattice, but the unit lattice is not always regular hexagon and may be non-regular hexagon. Moreover, the distortion may have a lattice arrangement such as a pentagon or a heptagon.
  • the distortion of the lattice arrangement suppresses the formation of grain boundaries. This is because the CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab plane direction, the bond distance between atoms changes due to the substitution of metal atoms, and the like. It is considered to be for
  • a crystal structure in which clear grain boundaries are confirmed is called a so-called polycrystal.
  • a grain boundary becomes a recombination center, traps carriers, and is highly likely to cause a decrease in on-current of a transistor, a decrease in field-effect mobility, and the like. Therefore, a CAAC-OS in which no clear grain boundaries are observed is one of crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor.
  • a structure containing Zn is preferable for forming a CAAC-OS.
  • In--Zn oxide and In--Ga--Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.
  • a CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, it can be said that the decrease in electron mobility due to grain boundaries is less likely to occur in CAAC-OS.
  • a CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, an oxide semiconductor including CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS is resistant to heat and has high reliability.
  • CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS for the OS transistor makes it possible to increase the degree of freedom in the manufacturing process.
  • nc-OS has periodic atomic arrangement in a minute region (eg, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm).
  • the nc-OS has minute crystals.
  • the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also called a nanocrystal.
  • nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
  • an nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor depending on the analysis method.
  • an nc-OS film is subjected to structural analysis using an XRD apparatus, out-of-plane XRD measurement using ⁇ /2 ⁇ scanning does not detect a peak indicating crystallinity.
  • an nc-OS film is subjected to electron beam diffraction (also referred to as selected area electron beam diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern such as a halo pattern is obtained. is observed.
  • an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than the size of a nanocrystal (for example, 1 nm or more and 30 nm or less)
  • an electron beam diffraction pattern is obtained in which a plurality of spots are observed within a ring-shaped area centered on the direct spot.
  • An a-like OS is an oxide semiconductor having a structure between an nc-OS and an amorphous oxide semiconductor.
  • An a-like OS has void or low density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. In addition, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.
  • CAC-OS relates to material composition.
  • CAC-OS is, for example, one structure of a material in which elements constituting a metal oxide are unevenly distributed with a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof.
  • the metal oxide one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size in the vicinity thereof.
  • the mixed state is also called mosaic or patch.
  • CAC-OS is a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the film (hereinafter, also referred to as a cloud shape). ). That is, CAC-OS is a composite metal oxide in which the first region and the second region are mixed.
  • the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In—Ga—Zn oxide are represented by [In], [Ga], and [Zn], respectively.
  • the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film.
  • the second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film.
  • the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
  • the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
  • the first region is a region containing indium oxide, indium zinc oxide, or the like as a main component.
  • the second region is a region containing gallium oxide, gallium zinc oxide, or the like as a main component. That is, the first region can be rephrased as a region containing In as a main component. Also, the second region can be rephrased as a region containing Ga as a main component.
  • the CAC-OS in the In—Ga—Zn oxide means a region containing Ga as a main component and a region containing In as a main component in a material structure containing In, Ga, Zn, and O. Each region is a mosaic, and refers to a configuration in which these regions exist randomly. Therefore, CAC-OS is presumed to have a structure in which metal elements are unevenly distributed.
  • a CAC-OS can be formed, for example, by a sputtering method under conditions in which the substrate is not heated.
  • a sputtering method one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. good.
  • an inert gas typically argon
  • oxygen gas typically argon
  • a nitrogen gas may be used as a deposition gas. good.
  • the lower the flow rate ratio of the oxygen gas to the total flow rate of the film formation gas during film formation, the better. is preferably 0% or more and 10% or less.
  • a region containing In as a main component is obtained by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that the (first region) and the region (second region) containing Ga as the main component are unevenly distributed and have a mixed structure.
  • EDX energy dispersive X-ray spectroscopy
  • the first region is a region with higher conductivity than the second region. That is, when carriers flow through the first region, conductivity as a metal oxide is developed. Therefore, by distributing the first region in the form of a cloud in the metal oxide, a high field effect mobility ( ⁇ ) can be realized.
  • the second region is a region with higher insulation than the first region.
  • the leakage current can be suppressed by distributing the second region in the metal oxide.
  • CAC-OS when used for a transistor, the conductivity caused by the first region and the insulation caused by the second region act in a complementary manner to provide a switching function (turning ON/OFF). functions) can be given to the CAC-OS.
  • a part of the material has a conductive function
  • a part of the material has an insulating function
  • the whole material has a semiconductor function.
  • CAC-OS is most suitable for various semiconductor devices including display devices.
  • Oxide semiconductors have various structures and each has different characteristics.
  • An oxide semiconductor of one embodiment of the present invention includes two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS. may
  • an oxide semiconductor with low carrier concentration is preferably used for a transistor.
  • the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm ⁇ 3 or less, preferably 1 ⁇ 10 15 cm ⁇ 3 or less, more preferably 1 ⁇ 10 13 cm ⁇ 3 or less, more preferably 1 ⁇ 10 11 cm ⁇ 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 cm ⁇ 3 and 1 ⁇ 10 ⁇ 9 cm ⁇ 3 or more.
  • the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
  • a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
  • an oxide semiconductor with a low carrier concentration is sometimes referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
  • the trap level density may also be low.
  • the charge trapped in the trap level of the oxide semiconductor takes a long time to disappear and may behave like a fixed charge. Therefore, a transistor whose channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
  • Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.
  • the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are 2. ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 17 atoms/cm 3 or less.
  • the concentration of alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
  • the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms/cm 3 , preferably 5 ⁇ 10 18 atoms/cm 3 or less, more preferably 1 ⁇ 10 18 atoms/cm 3 or less. , more preferably 5 ⁇ 10 17 atoms/cm 3 or less.
  • the oxide semiconductor reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies.
  • oxygen vacancies When hydrogen enters the oxygen vacancies, electrons, which are carriers, may be generated.
  • part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron, which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, hydrogen in the oxide semiconductor is preferably reduced as much as possible.
  • the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms/cm 3 , preferably less than 1 ⁇ 10 19 atoms/cm 3 , more preferably less than 5 ⁇ 10 18 atoms/cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described in this specification and the like.
  • An electronic device of this embodiment includes a display device of one embodiment of the present invention.
  • the display device of one embodiment of the present invention can easily have high definition, high resolution, and large size. Therefore, the display device of one embodiment of the present invention can be used for display portions of various electronic devices.
  • the display device of one embodiment of the present invention can be manufactured at low cost, the manufacturing cost of the electronic device can be reduced.
  • Examples of electronic devices include televisions, desktop or notebook personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens. Examples include cameras, digital video cameras, digital photo frames, mobile phones, mobile game machines, mobile information terminals, and sound reproducing devices.
  • the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
  • electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, and glasses-type AR devices that can be worn on the head. equipment and the like.
  • Wearable devices also include devices for SR and devices for MR.
  • a display device of one embodiment of the present invention includes HD (1280 ⁇ 720 pixels), FHD (1920 ⁇ 1080 pixels), WQHD (2560 ⁇ 1440 pixels), WQXGA (2560 ⁇ 1600 pixels), 4K2K (2560 ⁇ 1600 pixels), 3840 ⁇ 2160) and 8K4K (7680 ⁇ 4320 pixels).
  • the resolution it is preferable to set the resolution to 4K2K, 8K4K, or higher.
  • the pixel density (definition) of the display device of one embodiment of the present invention is preferably 300 ppi or more, more preferably 500 ppi or more, 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, and 5000 ppi or more.
  • the electronic device of the present embodiment can be incorporated along the inner wall or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.
  • the electronic device of this embodiment may have an antenna.
  • An image, information, or the like can be displayed on the display portion by receiving a signal with the antenna.
  • the antenna may be used for contactless power transmission.
  • the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage , power, radiation, flow, humidity, gradient, vibration, odor or infrared sensing, detection or measurement).
  • the electronic device of this embodiment can have various functions. For example, functions to display various information (still images, moving images, text images, etc.) on the display, touch panel functions, functions to display calendars, dates or times, functions to execute various software (programs), wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.
  • An electronic device 6500 illustrated in FIG. 22A is a personal digital assistant that can be used as a smart phone.
  • An electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • a display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502 .
  • FIG. 22B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.
  • a light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printer are placed in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • a portion of the display panel 6511 is folded back in a region outside the display portion 6502, and the FPC 6515 is connected to the folded portion.
  • An IC6516 is mounted on the FPC6515.
  • the FPC 6515 is connected to terminals provided on the printed circuit board 6517 .
  • a flexible display (flexible display device) of one embodiment of the present invention can be applied to the display panel 6511 . Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and the large-capacity battery 6518 can be mounted. In addition, by folding back part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.
  • FIG. 23A shows an example of a television device.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • the operation of the television apparatus 7100 shown in FIG. 23A can be performed by operation switches provided in the housing 7101 and a separate remote controller 7111 .
  • the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display section for displaying information output from the remote controller 7111 .
  • a channel and a volume can be operated with operation keys or a touch panel provided in the remote controller 7111 , and an image displayed on the display portion 7000 can be operated.
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers, etc.) information communication is performed. is also possible.
  • FIG. 23B shows an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • FIGS. 23C and 23D An example of digital signage is shown in FIGS. 23C and 23D.
  • a digital signage 7300 illustrated in FIG. 23C includes a housing 7301, a display portion 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), connection terminals, various sensors, a microphone, and the like.
  • FIG. 23D is a digital signage 7400 mounted on a cylindrical post 7401.
  • FIG. A digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 in FIGS. 23C and 23D.
  • the display portion 7000 As the display portion 7000 is wider, the amount of information that can be provided at one time can be increased. In addition, the wider the display unit 7000, the more conspicuous it is, and the more effective the advertisement can be, for example.
  • a touch panel By applying a touch panel to the display portion 7000, not only an image or a moving image can be displayed on the display portion 7000 but also the user can intuitively operate the display portion 7000, which is preferable. Further, when used for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or 7400 is preferably capable of cooperating with an information terminal 7311 or information terminal 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 can execute a game using the screen of the information terminal 7311 or 7411 as an operation means (controller). This allows an unspecified number of users to simultaneously participate in and enjoy the game.
  • FIG. 24A is a diagram showing the appearance of camera 8000 with finder 8100 attached.
  • a camera 8000 includes a housing 8001, a display portion 8002, operation buttons 8003, a shutter button 8004, and the like.
  • a detachable lens 8006 is attached to the camera 8000 . Note that the camera 8000 may be integrated with the lens 8006 and the housing.
  • the camera 8000 can capture an image by pressing the shutter button 8004 or by touching the display portion 8002 functioning as a touch panel.
  • a housing 8001 has a mount having electrodes, and can be connected to a finder 8100, a strobe device, or the like.
  • a viewfinder 8100 includes a housing 8101, a display portion 8102, buttons 8103, and the like.
  • Housing 8101 is attached to camera 8000 by mounts that engage mounts of camera 8000 .
  • a viewfinder 8100 can display an image or the like received from the camera 8000 on a display portion 8102 .
  • a button 8103 has a function as a power button or the like.
  • the display device of one embodiment of the present invention can be applied to the display portion 8002 of the camera 8000 and the display portion 8102 of the viewfinder 8100 .
  • the camera 8000 having a built-in finder may also be used.
  • FIG. 24B is a diagram showing the appearance of head mounted display 8200. As shown in FIG. 24B
  • the head mounted display 8200 has a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, a cable 8205 and the like.
  • a battery 8206 is built in the mounting portion 8201 .
  • a main body 8203 includes a wireless receiver or the like, and can display received video information on a display portion 8204 .
  • the main body 8203 is equipped with a camera, and information on the movement of the user's eyeballs or eyelids can be used as input means.
  • the mounting portion 8201 may be provided with a plurality of electrodes capable of detecting a current that flows along with the movement of the user's eyeballs at a position that touches the user, and may have a function of recognizing the line of sight. Moreover, it may have a function of monitoring the user's pulse based on the current flowing through the electrode.
  • the mounting unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, an acceleration sensor, etc., and has a function of displaying biological information of the user on the display unit 8204, In addition, a function of changing an image displayed on the display portion 8204 may be provided.
  • the display device of one embodiment of the present invention can be applied to the display portion 8204 .
  • FIG. 24C to 24E are diagrams showing the appearance of the head mounted display 8300.
  • FIG. A head mounted display 8300 includes a housing 8301 , a display portion 8302 , a band-shaped fixture 8304 , and a pair of lenses 8305 .
  • the user can see the display on the display portion 8302 through the lens 8305 .
  • the display portion 8302 it is preferable to arrange the display portion 8302 in a curved manner because the user can feel a high presence.
  • three-dimensional display or the like using parallax can be performed.
  • the configuration is not limited to the configuration in which one display portion 8302 is provided, and two display portions 8302 may be provided and one display portion may be arranged for one eye of the user.
  • the display device of one embodiment of the present invention can be applied to the display portion 8302 .
  • the display device of one embodiment of the present invention can also achieve extremely high definition. For example, even when the display is magnified using the lens 8305 as shown in FIG. 24E and visually recognized, the pixels are difficult for the user to visually recognize. In other words, the display portion 8302 can be used to allow the user to view highly realistic images.
  • FIG. 24F is a diagram showing the appearance of a goggle-type head mounted display 8400.
  • the head mounted display 8400 has a pair of housings 8401, a mounting section 8402, and a cushioning member 8403.
  • a display portion 8404 and a lens 8405 are provided in the pair of housings 8401, respectively. By displaying different images on the pair of display portions 8404, three-dimensional display using parallax can be performed.
  • a user can view the display portion 8404 through the lens 8405 .
  • the lens 8405 has a focus adjustment mechanism, and its position can be adjusted according to the user's visual acuity.
  • the display portion 8404 is preferably square or horizontally long rectangular. This makes it possible to enhance the sense of reality.
  • the mounting portion 8402 preferably has plasticity and elasticity so that it can be adjusted according to the size of the user's face and does not slip off.
  • a part of the mounting portion 8402 preferably has a vibration mechanism that functions as a bone conduction earphone. As a result, you can enjoy video and audio without the need for separate audio equipment such as earphones and speakers.
  • the housing 8401 may have a function of outputting audio data by wireless communication.
  • the mounting portion 8402 and the cushioning member 8403 are portions that come into contact with the user's face (forehead, cheeks, etc.). Since the cushioning member 8403 is in close contact with the user's face, it is possible to prevent light leakage and enhance the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that the cushioning member 8403 comes into close contact with the user's face when the head mounted display 8400 is worn by the user. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used.
  • a member that touches the user's skin is preferably detachable for easy cleaning or replacement.
  • the electronic device shown in FIGS. 25A to 25F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed). , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays , detection or measurement), a microphone 9008, and the like.
  • the electronic devices shown in FIGS. 25A to 25F have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display the date or time, a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device is equipped with a camera, etc., and has the function of capturing still images or moving images and storing them in a recording medium (external or built into the camera), or the function of displaying the captured image on the display unit, etc. good.
  • the display device of one embodiment of the present invention can be applied to the display portion 9001 .
  • FIG. 25A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as a smart phone, for example.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display text and image information on its multiple surfaces.
  • FIG. 25A shows an example in which three icons 9050 are displayed.
  • Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display portion 9001 . Examples of the information 9051 include notification of incoming e-mail, SNS, telephone, etc., title of e-mail, SNS, etc., sender name, date and time, remaining battery power, strength of antenna reception, and the like.
  • an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 25B is a perspective view showing the mobile information terminal 9102.
  • the portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001 .
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can confirm the information 9053 displayed at a position where the mobile information terminal 9102 can be viewed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of the clothes.
  • the user can check the display without taking out the portable information terminal 9102 from the pocket, and can determine, for example, whether to receive a call.
  • FIG. 25C is a perspective view showing a wristwatch-type personal digital assistant 9200.
  • the mobile information terminal 9200 can be used as a smart watch (registered trademark), for example.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • Hands-free communication is also possible by allowing the mobile information terminal 9200 to communicate with, for example, a headset capable of wireless communication.
  • the portable information terminal 9200 can transmit data to and from another information terminal through the connection terminal 9006, and can be charged. Note that the charging operation may be performed by wireless power supply.
  • FIG. 25D to 25F are perspective views showing a foldable personal digital assistant 9201.
  • FIG. 25D is a state in which the portable information terminal 9201 is unfolded
  • FIG. 25F is a state in which it is folded
  • FIG. 25E is a perspective view in the middle of changing from one of FIGS. 25D and 25F to the other.
  • the portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055 .
  • the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described in this specification and the like.
  • AB line, AL: wiring, CD: line, CL: wiring, GL: wiring, IC: display device, SL: wiring, 20: light emitting element, 100: pixel region, 101: insulating film, 102: anode, 104: hole injection layer, 105: hole transport layer, 110x: first region, 110y: second region, 110: partition wall, 115b: light emitting layer, 115g: light emitting layer, 115r: light emitting layer, 118b: third Liquid pool, 118g: Second liquid pool, 118r: First liquid pool, 119: Nozzle, 201: Transistor, 202: Transistor, 204: Connector, 205: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer 212: Insulating layer 213: Insulating layer 214: Insulating layer 215: Insulating layer 218: Insulating layer 221: Conductive layer 222a: Conductive layer 222b: Conductive layer 223: Conductive layer 225

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