WO2022153521A1 - 半導体電力変換装置 - Google Patents

半導体電力変換装置 Download PDF

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Publication number
WO2022153521A1
WO2022153521A1 PCT/JP2021/001419 JP2021001419W WO2022153521A1 WO 2022153521 A1 WO2022153521 A1 WO 2022153521A1 JP 2021001419 W JP2021001419 W JP 2021001419W WO 2022153521 A1 WO2022153521 A1 WO 2022153521A1
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Prior art keywords
terminal
voltage
switching element
semiconductor switching
clamp
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PCT/JP2021/001419
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English (en)
French (fr)
Japanese (ja)
Inventor
晃郎 島田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to PCT/JP2021/001419 priority Critical patent/WO2022153521A1/ja
Priority to JP2021544371A priority patent/JPWO2022153521A1/ja
Publication of WO2022153521A1 publication Critical patent/WO2022153521A1/ja
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present disclosure discloses a power conversion device that performs DC-AC power conversion using a semiconductor power conversion device such as an IGBT (Insulated Gate Bipolar Transistor), particularly a semiconductor capable of suppressing a surge voltage generated when a semiconductor switching element is turned off.
  • a semiconductor power conversion device such as an IGBT (Insulated Gate Bipolar Transistor), particularly a semiconductor capable of suppressing a surge voltage generated when a semiconductor switching element is turned off.
  • a general semiconductor power conversion device has a power conversion circuit that uses a semiconductor switching element. For example, by connecting semiconductor switching elements such as IGBTs in series and turning the semiconductor switching elements on and off alternately. , Converts power from DC power to AC power. In such a semiconductor power conversion device, it is necessary to reduce the influence of the surge voltage generated when the semiconductor switching element is turned off, and a surge voltage suppression circuit or the like is added to take countermeasures (for example, Patent Document 1). ..
  • the voltage between the terminals of the clamp capacitor connected between the collector and gate of the IGBT is the auxiliary DC power supply or the positive voltage for the drive signal source.
  • the power supply holds the surge voltage at the voltage that starts the operation to suppress the surge voltage (hereinafter referred to as “clamping operation”) (hereinafter referred to as “clamping operation start voltage”), and the IGBT starts the turn-off operation between the collector and the emitter.
  • Patent Document 1 although the surge voltage can be suppressed, an auxiliary DC power supply is required in addition to the DC power supply when the clamp operation is performed using the auxiliary DC power supply. Further, when the clamp operation is performed using the positive voltage for the drive signal source, the voltage of the positive voltage for the drive signal source is too low as the power source for setting the clamp operation start voltage, so even a low clamp operation start voltage is predetermined. It is necessary to divide the voltage between the collector and the emitter using a voltage dividing resistor so that the clamping operation can be started when a surge voltage is generated. Therefore, in the method of Patent Document 1, an auxiliary DC power supply or a voltage dividing resistor is extra required, and the circuit becomes large.
  • the clamp capacitor is charged to the clamp operation start voltage, but when a surge voltage is generated and the clamp operation is performed, the clamp capacitor is additionally charged by the surge voltage.
  • the clamp operation start voltage when the next clamp operation is performed becomes higher than the clamp operation start voltage when the clamp operation is first performed. Therefore, when the semiconductor switching element is repeatedly switched and a large surge voltage is continuously generated between the collector and emitter of the IGBT, even if a surge voltage to be suppressed occurs, it is clamped at the desired clamping operation start voltage. The operation may not be started, the effect of suppressing the surge voltage may not be sufficient, and the IGBT may be damaged.
  • the present disclosure has been made in view of the above, and is applied to the semiconductor switching element when the semiconductor switching element is turned off even if the semiconductor switching element is repeatedly switched while reducing the size of the surge voltage suppression circuit.
  • the purpose is to obtain a semiconductor power converter that can stably suppress the surge voltage.
  • the first terminal is connected to the positive side of the DC power supply
  • the second terminal is an output terminal that outputs AC power. It has a first semiconductor switching element connected and a second semiconductor switching element in which the second terminal is connected to the negative side of the DC power supply and the first terminal is connected to the output terminal.
  • a semiconductor power conversion device that converts DC power to AC power by alternately turning on and off the semiconductor switching element and the second semiconductor switching element, and the cathode is the third semiconductor switching element of the first semiconductor switching element.
  • a first backflow prevention diode connected to the terminal of the first, one end connected to the first terminal of the first semiconductor switching element, and the other end connected to the anode of the first backflow prevention diode.
  • the clamp capacitor, the first gate resistor whose one end is connected to the third terminal of the first semiconductor switching element, and the drive signal output terminal are connected to the other end of the first gate resistor, and the first A first drive circuit for driving a semiconductor switching element, a first charge / discharge resistor having one end connected to the negative side of a DC power supply and the other end connected to the anode of a first backflow prevention diode, and an anode.
  • a second clamping capacitor connected to the cathode of the semiconductor switching element, a second gate resistor having one end connected to the third terminal of the second semiconductor switching element, and a second gate resistor whose drive signal output terminal is a second gate resistor.
  • a second drive circuit connected to the other end of the semiconductor switching element to drive the second semiconductor switching element, one end connected to the positive side of the DC power supply, and the other end connected to the cathode of the second backflow prevention diode. It is characterized by having a second charge / discharge resistor.
  • the semiconductor power conversion device stabilizes the surge voltage applied to the semiconductor switching element when the semiconductor switching element is turned off even if the semiconductor switching element is repeatedly switched while miniaturizing the surge voltage suppression circuit. It has the effect of being able to suppress it.
  • FIG. 1 is a diagram showing a circuit configuration of the semiconductor power conversion device according to the first embodiment of the present disclosure.
  • the power conversion circuit of a general semiconductor power converter is a three-phase bridge circuit, and is composed of a three-phase series circuit electrically connected in parallel between the positive side and the negative side of the DC power supply. There is.
  • the series circuit is also called an arm, and is configured by electrically connecting a semiconductor switching element on the upper side of the arm and a semiconductor switching element on the lower side of the arm in series.
  • FIG. 1 shows a circuit configuration using an IGBT as a semiconductor switching element as an example, and is connected to the IGBT 1a on the upper side of the arm connected to the positive electrode side of the DC power supply 7 and to the negative electrode side of the DC power supply 7.
  • An example of one phase of a power conversion circuit in which the IGBT 1b on the lower side of the arm is connected in series is shown.
  • the semiconductor power conversion device shown in FIG. 1 includes an IGBT 1a, 1b having a gate G, a collector C, and an emitter E, a freewheeling diode 2a, 2b, a gate resistor 3a, 3b, a clamping capacitor 4a, 4b, and a backflow prevention diode 5a, It includes 5b, charging / discharging resistors 6a and 6b, a DC power supply 7, an output terminal 8 for outputting AC power, and drive circuits 10a and 10b for driving the IGBTs 1a and 1b.
  • the drive circuits 10a and 10b include positive power supplies 13a and 13b for the drive circuit, negative power supplies 14a and 14b for the drive circuit, NPN transistors 11a and 11b, PNP transistors 12a and 12b, control signal input terminals 15a and 15b, and drive signals, respectively.
  • the output terminals 16a and 16b are provided.
  • the semiconductor power conversion device operates so that the circuit portion including the clamping capacitors 4a and 4b, the backflow prevention diodes 5a and 5b, and the charge and discharge resistors 6a and 6b suppress the surge voltage due to the turn-off of the IGBTs 1a and 1b.
  • IGBTs 1a and 1b are examples of a first semiconductor switching element and a second semiconductor switching element
  • gate resistors 3a and 3b are examples of a first gate resistor and a second gate resistor
  • clamping capacitors 4a and 4b Is an example of a first clamp capacitor and a second clamp capacitor
  • backflow prevention diodes 5a and 5b are examples of a first backflow prevention diode and a second backflow prevention diode for charging and discharging.
  • the resistors 6a and 6b are examples of the first charge / discharge resistor and the second charge / discharge resistor
  • the drive circuits 10a and 10b are examples of the first drive circuit and the second drive circuit.
  • the collector C, the emitter E, and the gate G included in the IGBTs 1a and 1b are examples of the first terminal, the second terminal, and the third terminal of the semiconductor switching element.
  • the circuit configuration on the upper side of the arm is as follows. First, in the IGBT 1a, the collector C is connected to the positive electrode side of the DC power supply 7, the emitter E is connected to the output terminal 8, and the gate G is connected to one end of the gate resistor 3a. In the freewheeling diode 2a, the anode is connected to the emitter E of the IGBT 1a and the cathode is connected to the collector C of the IGBT 1a. One end of the clamping capacitor 4a is connected to the anode of the backflow prevention diode 5a, and the other end is connected to the collector C of the IGBT 1a. The cathode of the backflow prevention diode 5a is connected to the gate G of the IGBT 1a.
  • the drive signal output terminal 16a is connected to the other end of the gate resistor 3a.
  • the drive signal output terminal 16a is connected to the NPN transistor 11a and the emitter E of the PNP transistor 12a.
  • the control signal input terminal 15a is connected to the NPN transistor 11a and the base B of the PNP transistor 12a.
  • the positive electrode terminal is connected to the collector C of the NPN transistor 11a, and the negative electrode terminal is connected to the emitter E of the IGBT 1a.
  • the negative power supply 14a the negative electrode terminal is connected to the collector C of the PNP transistor 12a, and the positive electrode terminal is connected to the emitter E of the IGBT 1a.
  • One end of the charge / discharge resistor 6a is connected to the negative electrode side of the DC power supply 7, and the other end is connected to the anode of the backflow prevention diode 5a.
  • the circuit configuration on the lower side of the arm is almost the same as the circuit configuration on the upper side of the arm.
  • the collector C is connected to the output terminal 8
  • the emitter E is connected to the negative electrode side of the DC power supply 7
  • the gate G is connected to one end of the gate resistor 3b.
  • the freewheeling diode 2b the anode is connected to the emitter E of the IGBT 1b and the cathode is connected to the collector C of the IGBT 1b.
  • One end of the clamping capacitor 4b is connected to the cathode of the backflow prevention diode 5b, and the other end is connected to the gate G of the IGBT 1b.
  • the anode of the backflow prevention diode 5b is connected to the collector C of the IGBT 1b.
  • the drive signal output terminal 16b is connected to the other end of the gate resistor 3b.
  • the drive signal output terminal 16b is connected to the NPN transistor 11b and the emitter E of the PNP transistor 12b.
  • the control signal input terminal 15b is connected to the base B of the NPN transistor 11b and the PNP transistor 12b.
  • the positive power supply 13b for the drive circuit is connected to the collector C of the NPN transistor 11b, and the negative electrode terminal is connected to the emitter E of the IGBT 1b.
  • the negative electrode terminal is connected to the collector C of the PNP transistor 12b, and the positive electrode terminal is connected to the emitter E of the IGBT 1b.
  • One end of the charge / discharge resistor 6b is connected to the positive electrode side of the DC power supply 7, and the other end is connected to the cathode of the backflow prevention diode 5b.
  • FIG. 2 also shows, as a comparative example, the characteristics of a semiconductor switching element in a semiconductor power conversion device not provided with the surge voltage suppression circuit as shown in FIG.
  • FIGS. 2 (a) to 2 (d) 31, 32, 33, and 34 shown by solid lines are characteristic curves of the gate-emitter voltage Vge with respect to the IGBTs 1a and 1b of the semiconductor power conversion device according to the first embodiment.
  • 21, 22, 23, and 24 shown by broken lines are the characteristic curve of the gate-emitter voltage Vge and the characteristic curve of the collector-emitter voltage Vce with respect to the IGBTs 1a and 1b of the semiconductor power converter shown in FIG. It is a characteristic curve of a collector current Ic and a turn-off loss, and is shown as a comparative example.
  • the drive signal of the positive pulse is output from the drive signal output terminal 16a of the drive circuit 10a by the control signal input from the control signal input terminal 15a
  • the drive signal is supplied to the gate G of the IGBT 1a via the gate resistor 3a.
  • IGBT1a turns on.
  • the voltage V4a between the terminals of the clamping capacitor 4a is held at the same voltage as the DC power supply 7 via the charging / discharging resistor 6a.
  • control signal input from the control signal input terminal 15a changes the drive signal output from the drive signal output terminal 16a of the drive circuit 10a from a positive pulse to a negative pulse, and the negative pulse changes to a gate resistance.
  • the control signal input from the control signal input terminal 15a changes the drive signal output from the drive signal output terminal 16a of the drive circuit 10a from a positive pulse to a negative pulse, and the negative pulse changes to a gate resistance.
  • the gate-emitter voltage Vge1a changes so as to temporarily increase with respect to the characteristic curve 21 near time t1 as shown in the characteristic curve 31 of FIG. 2 (a), and becomes a threshold voltage.
  • the IGBT 1a is turned on, and the collector-emitter voltage Vce1a is clamped to the clamp voltage Vcecr near time t2.
  • the current change (di / dt) of the collector current Ic1a flowing between the collector and the emitter of the IGBT 1a becomes gentler than that of the characteristic curve 23 as shown in the characteristic curve 33 of FIG. 2 (c).
  • the arm upper clamp operation start voltage is an example of the first clamp operation start voltage.
  • the clamp voltage Vsecr in the first embodiment can be expressed by the following equation (1).
  • Vcecr V4a + Vge (th) + V5a ... (1)
  • Vge (th) indicates the threshold voltage of IGBT 1a.
  • the terminal voltage V4a of the clamping capacitor 4a is charged to the same voltage as the DC power supply 7, and the threshold voltage Vge (th) and the forward voltage V5a of the backflow prevention diode 5a are sufficient for the DC power supply voltage. Since it is small, the clamp voltage Vcecr is almost equal to the DC power supply voltage.
  • the operation of the circuit on the lower side of the arm is the same as that of the circuit on the upper side of the arm. Specifically, when the drive signal of the positive pulse is output from the drive circuit 10b by the control signal input from the control signal input terminal 15b, the drive signal is supplied to the gate G of the IGBT 1b via the gate resistor 3b. , IGBT1b turns on. At this time, the voltage V4b between the terminals of the clamping capacitor 4b is changed from the voltage of the DC power supply 7 to the positive power supply 13b for the drive circuit according to the control signal input from the control signal input terminal 15b via the charging / discharging resistor 6b.
  • control signal input from the control signal input terminal 15b changes the drive signal output from the drive signal output terminal 16b of the drive circuit 10b from a positive pulse to a negative pulse, and the negative pulse changes to a gate resistance.
  • the control signal input from the control signal input terminal 15b changes the drive signal output from the drive signal output terminal 16b of the drive circuit 10b from a positive pulse to a negative pulse, and the negative pulse changes to a gate resistance.
  • the gate-emitter voltage Vge1b changes so as to temporarily increase with respect to the characteristic curve 21 near time t1 as shown in the characteristic curve 31 of FIG. 2 (a), and becomes a threshold voltage.
  • the IGBT 1b is turned on, and the collector-emitter voltage Vce1b is clamped to the same clamping voltage as in the equation (1) near the time t2.
  • the current change (di / dt) of the collector current Ic1b flowing between the collector and the emitter due to the turn-off of the IGBT 1b becomes gentler than that of the characteristic curve 23 as shown in the characteristic curve 33 of FIG. 2 (c).
  • the lower clamp operation start voltage of the arm is an example of the second clamp operation start voltage.
  • the voltage between the terminals of the clamping capacitors 4a and 4b is charged and the voltage rises temporarily, but DC is supplied via the charging / discharging resistors 6a and 6b. It is discharged to the power source 7.
  • the clamp capacitor 4a is discharged until it reaches the same potential as the DC power supply 7.
  • the discharge of the clamping capacitor 4b is the voltage obtained by subtracting the drive circuit positive power supply 13b from the voltage of the DC power supply 7 or the voltage of the DC power supply 7 according to the drive signal input from the control signal input terminal 15b. It is discharged until it reaches the same potential as the voltage to which the negative power supply 14b is applied.
  • the clamping capacitor 4b is discharged until the potential becomes substantially the same as that of the DC power supply 7. In this way, the clamping capacitors 4a and 4b charged by the surge voltage are discharged via the charging / discharging resistors 6a and 6b, so that the clamping operation start voltage at the time of the second and subsequent switching of the semiconductor switching element becomes. It is maintained at the same voltage as the clamp operation start voltage at the time of the first switching of the semiconductor switching element. Therefore, the semiconductor power conversion device according to the embodiment of the present disclosure stably suppresses the surge voltage applied between the collector and the emitter at the time of turn-off even if the semiconductor switching element is repeatedly switched. Can be done.
  • the energy discharged from the clamping capacitors 4a and 4b is limited to the energy charged more than the DC power supply 7 by the surge voltage, not the total energy charged in the clamping capacitors 4a and 4b.
  • the discharge loss can be minimized, and the charging / discharging resistors 6a and 6b can be miniaturized.
  • the charging / discharging resistors 6a and 6b are not only used as a charging / discharging path for the capacitors 4a and 4b, but also suppress the current flowing from the DC power supply 7 to the gates of the IGBTs 1a and 1b.
  • the semiconductor power conversion device has a configuration in which a clamping capacitor is connected between the collector and gate of the IGBT, and the clamping capacitor is charged and discharged from the DC power supply via the charging / discharging resistor.
  • This makes it possible to set the clamp operation start voltage without using an auxiliary DC power supply or a voltage dividing resistor, and it is possible to suppress the surge voltage while reducing the size of the surge voltage suppression circuit.
  • the clamp capacitor by configuring the clamp capacitor to discharge the excess charge to the DC power supply via the charging / discharging resistor, the clamping operation start voltage is set to a predetermined voltage even if the semiconductor switching element is repeatedly switched. It is possible to stably suppress the surge voltage applied between the collector and the emitter when the semiconductor switching element is turned off.
  • Embodiment 2 There is a trade-off relationship between surge voltage suppression and turn-off loss, and if the surge voltage suppression effect is high, turn-off loss increases.
  • the clamp voltage that determines the surge voltage suppression effect is determined by the voltage between the terminals of the clamp capacitor (that is, the DC power supply voltage), the threshold voltage of the semiconductor switching element, and the forward voltage of the backflow prevention diode. Since the clamp voltage cannot be adjusted flexibly, the trade-off between surge voltage suppression and increase in turn-off loss cannot be flexibly adjusted.
  • a semiconductor power conversion device capable of flexibly adjusting the clamp voltage and flexibly adjusting the trade-off between surge voltage suppression and increase in turn-off loss will be described. The same parts as those of the first embodiment will be omitted, and the parts different from the first embodiment will be described.
  • FIG. 3 is a diagram showing a circuit configuration of the semiconductor power conversion device according to the second embodiment.
  • the semiconductor power conversion device shown in FIG. 3 includes clamp current suppression resistors 9a and 9b that suppress the clamp operation start current, and other configurations are the same as those in FIG.
  • the same components as those shown in FIG. 1 are designated by the same reference numerals.
  • the clamp current suppression resistors 9a and 9b are examples of the first clamp current suppression resistor and the second clamp current suppression resistor.
  • One end of the clamp current suppression resistor 9a is connected to the collector C of the IGBT 1a, and the other end of the clamp current suppression resistor 9a is connected to the terminal opposite to the terminal of the clamp capacitor 4a connected to the backflow prevention diode 5a. Has been done.
  • clamp current suppression resistor 9b One end of the clamp current suppression resistor 9b is connected to the collector C of the IGBT 1b, and the other end of the clamp current suppression resistor 9b is connected to the anode of the backflow prevention diode 5b.
  • the connection configuration of the clamp current suppression resistors 9a and 9b shown in FIG. 3 is an example, and the clamp current suppression resistors 9a and 9b may be provided so as to suppress the clamp operation start current. That is, the clamp current suppression resistor 9a is connected in series with the clamp capacitor 4a between the collector C and the gate G of the IGBT 1a, and the clamp current suppression resistor 9b is connected between the collector C and the gate G of the IGBT 1b. It suffices if it is connected in series with the clamping capacitor 4b.
  • FIGS. 2 and 3 The operation of the semiconductor power conversion device according to the second embodiment will be described with reference to FIGS. 2 and 3. Similar to the description in the first embodiment, when either of the IGBTs 1a and 1b is turned off, a surge voltage is generated between the collector and the emitter of the IGBT that has turned off. Since the operation is the same regardless of whether the IGBT 1a is turned off or the IGBT 1b is turned off, the case where the IGBT 1a on the upper side of the arm is turned off will be described below as an example.
  • the voltage obtained by subtracting the clamp operation start voltage on the upper side of the arm from the collector-emitter voltage Vce1a of the IGBT 1a is the clamp current suppression resistor 9a. Is applied to. Therefore, the current obtained by dividing the applied voltage to the clamp current suppression resistance 9a by the resistance value R9a of the clamp current suppression resistance 9a flows from the collector C of the IGBT 1a to the gate resistance 3a as the arm upper clamp operation start current, and becomes the gate resistance 3a. A voltage is generated in the direction opposite to that of the drive circuit negative power supply 14a.
  • the gate-emitter voltage Vge1a changes so as to temporarily increase.
  • the gate-emitter voltage Vge1a of the IGBT 1a at this time shows a characteristic curve as shown in 41 of FIG. 2 (a). That is, the characteristic curve 41 of the gate-emitter voltage Vge1a of the IGBT 1a of the second embodiment temporarily rises near time t1, but the clamp operation start current on the upper side of the arm is limited by the clamp current suppression resistor 9a. As a result, the increase in the gate-emitter voltage Vge1a after the turn-off of the IGBT 1a is reduced as compared with the characteristic curve 31 of the gate-emitter voltage Vge1a of the first embodiment.
  • the characteristic curve of the collector-emitter voltage Vce1a at this time is a characteristic curve as shown in 42 of FIG. 2 (b). That is, the characteristic curve 42 of the collector-emitter voltage Vce1a of the IGBT 1a of the second embodiment is the voltage immediately after the turn-off near the time t2 as compared with the characteristic curve 32 of the collector-emitter voltage Vce1a of the IGBT 1a of the first embodiment. The rise of is slightly higher, but after that, it quickly converges to the steady state voltage.
  • the clamp voltage Vcecr at this time can be expressed by the following equation (2).
  • Vcecr V4a + (Vge (th) + V14a) x R9a / R3a + V5a + Vge (th) ⁇ ⁇ ⁇ (2)
  • V4a is the voltage between the terminals of the clamping capacitor 4a
  • Vge (th) is the threshold voltage of the IGBT 1a
  • V14a is the voltage of the negative power supply 14a for the drive circuit
  • R9a is the resistance value of the clamping current suppression resistor 9a.
  • R3a indicates the resistance value of the gate resistance 3a
  • V5a indicates the forward voltage of the backflow prevention diode 5a.
  • the second term (Vge (th) + V14a) ⁇ R9a The clamp voltage can be predominantly adjusted with / R3a.
  • the inter-terminal voltage V4a of the clamp capacitor 4a is charged by the clamp operation start current Icr flowing from the collector of the IGBT 1a when a surge voltage is generated.
  • the clamp operation start current Icr can be expressed by the following equation (3).
  • the capacitance of the clamp capacitor 4a is not sufficient with respect to the clamp operation start current Icr flowing from the collector C of the IGBT 1a into the clamp capacitor 4a, the voltage V4a between the terminals of the clamp capacitor 4a rises, and the clamp voltage Vcecr Will be higher than the originally planned voltage, so there is a risk that an excessive surge voltage will be applied to the IGBT 1a. Therefore, regarding the capacitance of the clamping capacitor 4a, it is necessary to select a capacitor having an appropriate capacitance with respect to the clamping operation start current Icr flowing from the collector C of the IGBT 1a into the clamping capacitor 4a.
  • the collector-emitter voltage Vce1a of the IGBT 1a is clamped, and the IGBT 1a has the characteristic curve 41 of the gate-emitter voltage Vge1a and the characteristic curve 42 of the collector-emitter voltage Vce1a.
  • the characteristic curve of the collector current Ic1a of the IGBT 1a shows the characteristic curve shown in 43 of FIG. 2 (c).
  • the slope of the current change (di / dt) of the collector current Ic of 43 in FIG. 2 (c) is compared with the slope of the current change (di / dt) of the collector current Ic of 33 in FIG. 2 (c).
  • the clamp current suppression resistor 9a has a function of adjusting the inclination of the current change (di / dt) of the collector current Ic.
  • the slope of the current change (di / dt) of the collector current Ic of 43 in FIG. 2 (c) became larger than the slope of the current change (di / dt) of the collector current Ic of 33 in FIG. 2 (c).
  • the turn-off loss 44 of the IGBT 1a is reduced as compared with the turn-off loss 34.
  • the semiconductor power converter flexibly adjusts the clamping voltage between the collector and the emitter of the IGBT by the clamping current suppression resistor provided in series with the clamping capacitor between the collector and the gate of the IGBT. Since it can be adjusted to flexibly adjust the trade-off between surge voltage suppression and increase in turn-off loss, the desired surge voltage suppression within the allowable range of turn-off loss can be achieved by selecting an appropriate resistance value for the clamp current suppression resistance. The effect can be obtained.
  • the semiconductor switching element has been described as an IGBT, but the same action / effect can be obtained by replacing the semiconductor switching element with a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).
  • MOSFET Metal-Oxide-Semiconductor Field Effect Transistor
  • the semiconductor switching element is configured so that the collector C is replaced with the drain D and the emitter E is replaced with the source S.
  • the drain D, the source S, and the gate G included in the MOSFET are examples of the first terminal, the second terminal, and the third terminal of the semiconductor switching element.
  • the configuration shown in the above-described embodiment shows an example of the contents of the present disclosure, can be combined with another known technique, and has a configuration within a range that does not deviate from the gist of the present disclosure. It is also possible to omit or change a part.

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7754354B1 (ja) * 2025-01-22 2025-10-15 三菱電機ビルソリューションズ株式会社 半導体スイッチング素子駆動装置

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2009273244A (ja) * 2008-04-11 2009-11-19 Nippon Soken Inc スイッチング回路
JP2013201590A (ja) * 2012-03-24 2013-10-03 Toshiba Corp Ｆｅｔ駆動回路およびｆｅｔモジュール
JP2019129565A (ja) * 2018-01-23 2019-08-01 日産自動車株式会社 駆動装置

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JP2009273244A (ja) * 2008-04-11 2009-11-19 Nippon Soken Inc スイッチング回路
JP2013201590A (ja) * 2012-03-24 2013-10-03 Toshiba Corp Ｆｅｔ駆動回路およびｆｅｔモジュール
JP2019129565A (ja) * 2018-01-23 2019-08-01 日産自動車株式会社 駆動装置

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JP7754354B1 (ja) * 2025-01-22 2025-10-15 三菱電機ビルソリューションズ株式会社 半導体スイッチング素子駆動装置

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