WO2022151368A1 - 掩膜板组件及其加工方法 - Google Patents

掩膜板组件及其加工方法 Download PDF

Info

Publication number
WO2022151368A1
WO2022151368A1 PCT/CN2021/072207 CN2021072207W WO2022151368A1 WO 2022151368 A1 WO2022151368 A1 WO 2022151368A1 CN 2021072207 W CN2021072207 W CN 2021072207W WO 2022151368 A1 WO2022151368 A1 WO 2022151368A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask plate
evaporation
hole
frame
stretching
Prior art date
Application number
PCT/CN2021/072207
Other languages
English (en)
French (fr)
Inventor
吕文旭
伍青峰
王永茂
张文畅
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to CN202180000032.XA priority Critical patent/CN115087923A/zh
Priority to PCT/CN2021/072207 priority patent/WO2022151368A1/zh
Priority to US18/026,293 priority patent/US20230357914A1/en
Publication of WO2022151368A1 publication Critical patent/WO2022151368A1/zh

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof

Definitions

  • the present invention relates to the technical field of evaporation, in particular to a mask assembly and a processing method thereof.
  • the masks welded on the frame also have different shapes.
  • the tension force on the mask plate is too large, which will cause the mobility of the mask strip to deteriorate, so that uneven distribution of magnetic force is likely to occur during the evaporation process, and then the occurrence of Adverse phenomena such as edge color mixing caused by lamination will affect the evaporation effect.
  • an object of the present invention is to provide a mask assembly, which can effectively solve the problem of uneven distribution of magnetic force during the evaporation process.
  • the invention also provides a processing method of the mask assembly.
  • the mask assembly according to the embodiment of the first aspect of the present invention includes: a frame, the middle of the frame forms an opening; on the frame; and a mask plate, the mask plate is fixed on the frame, the mask plate is provided with an evaporation hole and a stretching hole, and the evaporation hole is opposite to the opening,
  • the stretching hole is opposite to the shielding bar to shield the stretching hole by the shielding bar.
  • the mask plate assembly of the embodiment of the present invention by arranging the stretching holes on the mask plate, the area of the solid region on the mask plate can be reduced, so that the tension force on the mask plate can be reduced, so that the mask plate
  • the plate has good mobility, which can ensure the uniform distribution of the magnetic force during the evaporation process, improve the fit between the mask plate and the part to be evaporated, make the edge color mixing well, and improve the evaporation effect and product yield.
  • the stretching hole can be shielded by the shielding bar, so as to prevent the evaporation material from being evaporated onto the part to be evaporated through the stretching hole, so that the influence of the stretching hole can be avoided. Evaporation pattern, simple structure and ingenious design.
  • the stretching hole includes a first stretching hole
  • the mask plate includes an evaporation area and a connection area
  • the connection area is located outside the evaporation area
  • the connection area is connected with the frame
  • a transition area is formed between the connection area and the evaporation area
  • the first stretching hole is arranged on the transition area.
  • the plurality of the first stretching holes are arranged at intervals in the circumferential direction of the mask plate.
  • the mask plate is provided with an observation hole, the observation hole is recessed inward from the edge of the mask plate, and the first stretching hole is provided on the side of the observation hole. One side adjacent to the center of the mask plate and the first stretching hole communicates with the observation hole.
  • the plurality of evaporation holes are arranged in an array, and the stretching holes include second stretching holes, and the second stretching holes are arranged adjacent to each other. between two rows of the evaporation holes and/or two adjacent rows of the evaporation holes.
  • the mask has a plurality of first solid regions spaced in a first direction and a plurality of second solid regions spaced in a second direction, the first direction and the The second direction is vertical, the widths of the plurality of first solid regions are equal, and/or the widths of the plurality of second solid regions are the same.
  • the blocking strip is located between the frame and the mask plate.
  • the frame is provided with a sinking groove, and both ends of the shielding strip are fixed in the sinking groove.
  • the thickness of the shielding strip is less than or equal to the depth of the sink.
  • the frame is a metal part
  • the shielding strip is a stainless steel part
  • the mask plate is an invar alloy part
  • both the shielding strip and the mask plate are welded to the frame superior.
  • the mask plate assembly is the mask plate assembly according to the above embodiment, and the processing method includes: providing a frame; The end is fixed on the frame; the mask plate is fixed on the frame, and the stretching hole on the mask plate is opposite to the shielding strip.
  • the processing method of the mask plate assembly according to the embodiment of the second aspect of the present invention, by arranging the stretching holes on the mask plate, the area of the solid region on the mask plate can be reduced, so that the tension on the mask plate can be reduced.
  • the tightening force makes the mask plate have good mobility, which can ensure the uniform distribution of the magnetic force during the evaporation process, improve the adhesion between the mask plate and the part to be evaporated, make the edge color mixing well, and improve the evaporation effect. and product yield.
  • the stretching hole can be shielded by the shielding bar, so as to prevent the evaporation material from being evaporated onto the part to be evaporated through the stretching hole, so that the influence of the stretching hole can be avoided.
  • Evaporation pattern simple structure and ingenious design.
  • FIG. 1 is a schematic diagram of a mask assembly according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a frame and a shielding strip according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a frame and a shielding strip according to another embodiment of the present invention.
  • Figure 4 is a side view according to the frame and shielding strip shown in Figure 3;
  • FIG. 5 is a schematic diagram of a mask according to an embodiment of the present invention.
  • Mask plate 3 evaporation hole 31; drawing hole 32; first drawing hole 33a, second drawing hole 32b, observation hole 33; first solid area 34; second solid area 35.
  • the mask assembly 100 includes a frame 1 , a blocking strip 2 and a mask 3 .
  • the frame 1 may be formed into a ring-shaped structure, and an opening 12 is formed in the middle of the frame 1 .
  • the shielding bar 2 is arranged at the opening 12 and both ends of the shielding bar 2 are fixed on the frame 1 .
  • the shielding bar 2 can be formed into a long strip shape, and both ends of the shielding bar 2 in the length direction can be fixed on the frame 1 .
  • a plane parallel to the plane where the end face of the frame 1 is located is defined as the reference plane, and the orthographic projection of the middle of the shielding strip 2 on the reference plane falls within the orthographic projection of the opening 12 on the reference plane.
  • the middle part of the shielding strip 2 described in this application should be understood in a broad sense, that is, the middle part in the strict sense is not required, and the positions between the two ends of the lengthwise direction of the shielding strip 2 can be understood as the “shielding strip 2" in this application. Middle of Article 2".
  • the mask plate 3 is fixed on the frame 1.
  • the mask plate 3 is provided with an evaporation hole 31 and a stretching hole 32.
  • the evaporation hole 31 is opposite to the opening 12, and the stretching hole 32 is opposite to the shielding bar 2 to pass the shielding bar. 2. Block the stretching hole 32.
  • the evaporation material can be evaporated onto the sample through the evaporation hole 31 .
  • the drawing hole 32 may be formed on the solid area of the mask plate 3 where the evaporation hole 31 is not provided.
  • the stretching holes 32 on the mask plate 3 and disposing the shielding strips 2 for shielding the stretching holes 32 on the frame 1 the area of the solid area on the mask plate 3 can be reduced, thereby reducing the
  • the tension on the small mask plate 3 makes the mask plate 3 have good mobility, thereby ensuring uniform distribution of the magnetic force during the evaporation process, and improving the fit between the mask plate 3 and the part to be evaporated.
  • the color mixing of the edge is good, the evaporation effect is improved, and at the same time, the stretching hole 32 can be prevented from affecting the evaporation pattern.
  • the dimension of the orthographic projection of the shielding strip 2 on the reference surface perpendicular to the extending direction of the shielding strip 2 is greater than or equal to the dimension of the orthographic projection of the stretching hole 32 on the reference surface in this direction. In this way, it can be ensured that the shielding strip 2 can completely cover the stretching hole 32 , so as to prevent the evaporation material from being evaporated onto the part to be evaporated through the stretching hole 32 .
  • the part to be evaporated is arranged on the side of the mask plate 3 away from the frame 1, and a magnetic adsorption device is installed on the side of the part to be evaporated away from the mask plate 3, and the magnetic adsorption device
  • the mask plate 3 is adsorbed, so that the mask plate 3 and the part to be evaporated can be closely attached.
  • the inventor of the present application found that if the area of the solid area on the mask plate 3 is large, the tension force on the mask plate 3 will increase, so that the mobility of the mask plate 3 will be deteriorated, resulting in the failure of the magnetic adsorption device.
  • Adsorbing the larger physical area on the mask plate 3 greatly affects the close fit between the mask plate 3 and the part to be evaporated, resulting in uneven distribution of the magnetic force, and then edge color mixing caused by the adhesion, etc.
  • the bad phenomenon affects the evaporation effect.
  • the mask assembly 100 by disposing the stretching holes 32 on the mask 3 , the area of the solid area on the mask 3 can be reduced, so that the tension on the mask 3 can be reduced Therefore, the mask plate 3 has good mobility, which can ensure uniform distribution of the magnetic force during the evaporation process, improve the adhesion between the mask plate 3 and the part to be evaporated, make the edge color mixing well, and improve the evaporation process. effect and product yield.
  • the stretching hole 32 can be shielded by the shielding bar 2, so as to prevent the evaporation material from being evaporated onto the part to be evaporated through the stretching hole 32, thereby The stretching hole 32 can be prevented from affecting the evaporation pattern, the structure is simple, and the design is ingenious.
  • the stretching hole 32 includes a first stretching hole 32a
  • the mask plate 3 includes an evaporation area and a connection area
  • the connection area is located outside the evaporation area
  • the evaporation hole 31 is formed in the evaporation area
  • the connection area is connected with the frame 1
  • a transition area is formed between the connection area and the evaporation area
  • the first stretching hole 32a is provided on the transition area.
  • connection area refers to the area where the mask plate 3 is connected to the frame 1
  • evaporation area refers to the outer edge of the row of evaporation holes 31 closest to the edge of the mask plate 3. enclosed area.
  • the evaporation area may be a square area, a circular area, or the like.
  • the “transition region” is the region located between the connection region and the evaporation region. The transition region may be formed as an annular region.
  • the direction “outside” mentioned in this application refers to the direction from the center of the mask plate 3 to the edge of the mask plate 3 .
  • connection area can be connected with the frame 1 , and the solid area between a row or a column of evaporation holes 31 near the edge of the mask 3 and the connection area is a transition area.
  • first stretching hole 32a By arranging the first stretching hole 32a at the transition area, the tension force on the outer periphery of the evaporation area of the mask plate 3 can be reduced, so that the outer periphery of the mask plate 3 has good mobility, thereby ensuring the magnetic force during the evaporation process.
  • the distribution is uniform, the fit between the mask plate 3 and the part to be evaporated is improved, the edge color mixing is good, and the product yield is improved.
  • first stretching holes 32 a there are a plurality of first stretching holes 32 a, and the plurality of first stretching holes 32 a are arranged at intervals in the circumferential direction of the mask plate 3 .
  • “plurality” means two or more.
  • a plurality of first stretching holes 32a may be respectively provided near each edge of the mask plate 3, and in other embodiments of the present invention, a plurality of first stretching holes 32a may also be provided near the mask plate 3 A plurality of first stretching holes 32a are provided at a part of the edges of 3 .
  • a plurality of first stretching holes 32 a may be respectively provided near the upper edge and the lower edge of the mask plate 3 .
  • a plurality of first stretching holes 32a may also be provided near the left edge and the right edge of the mask plate 3, respectively. Therefore, during the stretching process, the force of the mask plate 3 can be made uniform, so that the distribution of the magnetic force in the evaporation process can be uniform, and the adhesion between the mask plate 3 and the part to be evaporated can be improved, so that the edge Good color mixing improves product yield.
  • the mask plate 3 is provided with an observation hole 33 , the observation hole 33 is recessed inward from the edge of the mask plate 3 , and the first stretching hole 32 a is provided on the mask plate adjacent to the observation hole 33 . On one side of the center, at least one first stretching hole 32a communicates with the observation hole 33.
  • the observation hole 33 can be used to observe and detect the thickness of the vapor-deposited material on the to-be-evaporated part, and the like.
  • the observation holes 33 may be formed by inwardly concave edges on both sides of the mask plate 3 in the first direction. There may be multiple observation holes 33 , and the plurality of observation holes 33 are in the circumferential direction of the mask plate 3 . interval setting.
  • the first stretching hole 32a is located on the side of the observation hole 33 adjacent to the vapor deposition area. A part of the plurality of first stretching holes 32 a communicates with the observation hole 33 , or each of the first stretching holes 32 a communicates with the observation hole 33 . Therefore, by arranging the first stretching hole 32a on the side of the observation hole 33 adjacent to the vapor deposition area, and making at least one first stretching hole 32a communicate with the observation hole 33, the processing technology of the mask plate 3 can be simplified , improve processing efficiency and reduce processing costs.
  • the plurality of evaporation holes 31 are arranged in multiple rows and columns, and the stretching holes 32 include second stretching holes 32b, and the second stretching holes 32b are arranged in the opposite Between two adjacent rows of evaporation holes 31 and/or between two adjacent rows of evaporation holes 31 .
  • the plurality of vapor deposition holes 31 may be arranged in multiple rows and multiple columns, for example, M rows and N rows.
  • the second stretching holes 32b can be arranged between two adjacent rows of vapor deposition holes 31, or the second stretching holes 32b can be arranged between two adjacent rows of evaporation holes 31, or
  • the second drawing holes 32 b are provided between two adjacent rows of vapor deposition holes 31 and two adjacent rows of vapor deposition holes 31 .
  • the mask plate 3 has a plurality of first solid regions 34 spaced in a first direction and a plurality of second solid regions 35 spaced in a second direction, the first direction and the The two directions are perpendicular, and the widths of the plurality of first solid regions 34 are equal, and/or the widths of the plurality of second solid regions 35 are the same. That is, the widths of the plurality of first solid regions 34 are equal, or the widths of the plurality of second solid regions 35 are the same, or the widths of the plurality of first solid regions 34 are the same and the widths of the plurality of second solid regions 35 are the same.
  • the “perpendicular” in “the first direction is perpendicular to the second direction” described in this application should be understood in a broad sense. For example, if the included angle intersecting the first direction and the second direction is 80-100°, it can be understood that the first direction is perpendicular to the second direction.
  • the first direction may be the length direction of the frame 1 (eg, the up-down direction in FIG. 1 ), and the second direction may be the width direction of the frame 1 (eg, the left-right direction in FIG. 1 ) .
  • the width of the first solid region 34 is the distance between the two adjacent rows of evaporation holes 31 .
  • the width of the first solid regions 34 may be the distance between the adjacent evaporation holes 31 and the stretching holes 32 .
  • the width of the second solid region 35 is the distance between the two adjacent rows of evaporation holes 31 .
  • the width of the second solid regions 35 may be the distance between the adjacent evaporation holes 31 and the stretching holes 32 .
  • the tension force on the mask plate 3 can be made uniform, so that the evaporation process can be made uniform.
  • the distribution of the magnetic force is uniform, which improves the fit between the mask plate 3 and the part to be evaporated, makes the edge color mixing well, and improves the evaporation effect and product yield.
  • the blocking strip 2 is located between the frame 1 and the mask plate 3 .
  • the shielding strip 2 and the mask plate 3 are both located on the same side of the frame 1 , and the shielding strip 2 is located on the side of the mask plate 3 adjacent to the frame 1 . Therefore, the stretching hole 32 can be shielded by the shielding bar 2, and interference between the shielding bar 2 and other components can be avoided during the evaporation process.
  • the frame 1 is provided with a sinking groove 11 , and both ends of the shielding strip 2 are fixed in the sinking groove 11 .
  • the sink groove 11 may be formed by a concave formation of one side surface of the frame 1 toward the other side surface of the frame 1 . Therefore, by arranging the sinking groove 11 on the frame 1 and fixing both ends of the shielding strip 2 in the sinking groove 11, the gap between the mask plate 3 and the frame 1 can be reduced to ensure the evaporation effect.
  • the thickness of the shielding strip 2 is less than or equal to the depth of the sink groove 11 .
  • the thickness of the shielding strip 2 is smaller than the width of the sink groove 11 . In this way, the shielding bar 2 can be prevented from protruding from the surface of the frame 1, so that the gap between the mask plate 3 and the frame 1 can be eliminated, and the evaporation effect can be further improved.
  • the frame 1 is a metal part
  • the shielding strip 2 is a stainless steel part
  • the mask plate 3 is an invar alloy part
  • the shielding strip 2 and the mask plate 3 are welded on the frame 1
  • the frame 1 is a stainless steel piece.
  • the mask assembly 100 is the mask assembly 100 according to the above embodiment.
  • the mask assembly 100 includes a frame 1 , a blocking strip 2 and a mask 3 .
  • the frame 1 may be formed in a ring-shaped structure, and an opening 12 is formed in the middle of the frame 1 .
  • the shielding bar 2 is arranged at the opening 12 and both ends of the shielding bar 2 are fixed on the frame 1 .
  • the shielding bar 2 may be formed in an elongated shape.
  • the mask plate 3 is fixed on the frame 1.
  • the mask plate 3 is provided with an evaporation hole 31 and a stretching hole 32.
  • the evaporation hole 31 is opposite to the opening 12, and the stretching hole 32 is opposite to the shielding bar 2 to pass the shielding bar. 2.
  • the evaporation material can be evaporated onto the sample through the evaporation hole 31 .
  • the drawing hole 32 may be formed on the solid area of the mask plate 3 where the evaporation hole 31 is not provided.
  • the stretching holes 32 on the mask plate 3 and disposing the shielding strips 2 for shielding the stretching holes 32 on the frame 1 the area of the solid area on the mask plate 3 can be reduced, thereby reducing the
  • the tension on the small mask plate 3 makes the mask plate 3 have good mobility, thereby ensuring uniform distribution of the magnetic force during the evaporation process, and improving the fit between the mask plate 3 and the part to be evaporated.
  • the color mixing of the edge is good, the evaporation effect is improved, and at the same time, the stretching hole 32 can be prevented from affecting the evaporation pattern.
  • the processing method of the mask assembly 100 includes:
  • the mask plate 3 is fixed on the frame 1 , and the stretching holes 32 on the mask plate 3 are opposite to the shielding bar 2 .
  • both ends of the shielding strip 2 can be welded to the frame 1 first, and then the mask plate 3 can be welded to the frame 1 , wherein the shielding strip 2 and the mask plate 3 are located on the same side of the frame 1 .
  • the stretching holes 32 on the mask plate 3 can be reduced, so that the mask plate 3 can be reduced in size
  • the tension on the plate 3 makes the mask plate 3 have good mobility, which can ensure the uniform distribution of the magnetic force during the evaporation process, improve the adhesion between the mask plate 3 and the part to be evaporated, and make the edge color mixed Good, improving the evaporation effect and product yield.
  • the stretching hole 32 can be shielded by the shielding bar 2, so as to prevent the evaporation material from being evaporated onto the part to be evaporated through the stretching hole 32, thereby The stretching hole 32 can be prevented from affecting the evaporation pattern, the structure is simple, and the design is ingenious.

Abstract

一种掩膜板组件(100)及其加工方法,掩膜板组件(100)包括框架(1)、遮挡条(2)和掩膜板(3),框架(1)中部形成开口部(12);遮挡条(2)设在开口部(12)处且遮挡条(2)的两端固定在框架(1)上;掩膜板(3)固定在框架(1)上,掩膜板(3)上设有蒸镀孔(31)和拉伸孔(32),蒸镀孔(31)与开口部(12)相对,拉伸孔(32)与遮挡条(2)相对以通过遮挡条(2)遮挡拉伸孔(32)。

Description

掩膜板组件及其加工方法 技术领域
本发明涉及蒸镀技术领域,尤其是涉及一种掩膜板组件及其加工方法。
背景技术
相关技术中,由于产品排版不同,框架上焊接的掩膜板也呈现不同形状。然而,若掩膜板的实材区域过多,掩膜板上的张紧力过大,会导致掩膜条的活动性变差,从而在蒸镀过程中容易出现磁力分配不均,进而出现因贴合导致的边缘混色等不良现象,影响蒸镀效果。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一。为此,本发明的一个目的在于提出一种掩膜板组件,所述掩膜板组件可以有效解决蒸镀过程中出现的磁力分配不均的问题。
本发明还提出一种掩膜板组件的加工方法。
根据本发明第一方面实施例的掩膜板组件,包括:框架,所述框架中部形成开口部;遮挡条,所述遮挡条设在所述开口部处且所述遮挡条的两端固定在所述框架上;和掩膜板,所述掩膜板固定在所述框架上,所述掩膜板上设有蒸镀孔和拉伸孔,所述蒸镀孔与所述开口部相对,所述拉伸孔与所述遮挡条相对以通过所述遮挡条遮挡所述拉伸孔。
根据本发明实施例的掩膜板组件,通过在掩膜板上设置拉伸孔,可以减小掩膜板上实体区域的面积,从而可以减小掩膜板上的张紧力,使得掩膜板具有良好的活动性,进而可以保证蒸镀过程中磁力分配均匀,提高掩膜板与待蒸镀件之间的贴合度,使得边缘混色良好,提高了蒸镀效果和产品良率。同时,通过在框架上设置用于遮挡拉伸孔的遮挡条,可以通过遮挡条遮挡拉伸孔,避免蒸镀材料通过拉伸孔蒸镀至待蒸镀件上,从而可以避免拉伸孔影响蒸镀图案,结构简单,设计巧妙。
根据本发明的一些实施例,所述拉伸孔包括第一拉伸孔,所述掩膜板包括蒸镀区域和连接区域,所述连接区域位于所述蒸镀区域外侧,所述蒸镀孔形成在所述蒸镀区域,所述连接区域与所述框架相连,所述连接区域和所述蒸镀区域之间形成过渡区域,所述第一拉伸孔设在所述过渡区域上。
根据本发明的一些实施例,所述第一拉伸孔为多个,多个所述第一拉伸孔在所述掩膜板的周向上间隔设置。
根据本发明的一些实施例,所述掩膜板上设有观察孔,所述观察孔由所述掩膜板的边缘向内凹入,所述第一拉伸孔设在所述观察孔的邻近所述掩膜板中心的一侧且所述第一拉伸孔与所述观察孔连通。
根据本发明的一些实施例,所述蒸镀孔为多个,多个蒸镀孔排成阵列,所述拉伸孔包括第二拉伸孔,所述第二拉伸孔设在相邻的两排所述蒸镀孔和/或相邻的两列所述蒸镀孔之间。
根据本发明的一些实施例,所述掩膜板具有在第一方向上间隔设置的多个第一实体区域和在第二方向上间隔设置的多个第二实体区域,所述第一方向与所述第二方向垂直,多个所述第一实体区域的宽度相等,和/或多个所述第二实体区域的宽度相等。
根据本发明的一些实施例,所述遮挡条位于所述框架和所述掩膜板之间。
根据本发明的一些实施例,所述框架上设有沉槽,所述遮挡条的两端均固定在所述沉槽内。
根据本发明的一些实施例,所述遮挡条的厚度小于或等于所述沉槽的深度。
根据本发明的一些实施例,所述框架为金属件,所述遮挡条为不锈钢件,所述掩膜板为因瓦合金件,所述遮挡条和所述掩膜板均焊接在所述框架上。
根据本发明第二方面实施例的掩膜板组件的加工方法,所述掩膜板组件为根据上述实施例所述的掩膜板组件,所述加工方法包括:提供框架;将遮挡条的两端固定在框架上;将掩膜板固定在所述框架上,并使所述掩膜板上的拉伸孔与所述遮挡条相对。
根据本发明第二方面实施例的掩膜板组件的加工方法,通过在掩膜板上设置拉伸孔,可以减小掩膜板上实体区域的面积,从而可以减小掩膜板上的张紧力,使得掩膜板具有良好的活动性,进而可以保证蒸镀过程中磁力分配均匀,提高掩膜板与待蒸镀件之间的贴合度,使得边缘混色良好,提高了蒸镀效果和产品良率。同时,通过在框架上设置用于遮挡拉伸孔的遮挡条,可以通过遮挡条遮挡拉伸孔,避免蒸镀材料通过拉伸孔蒸镀至待蒸镀件上,从而可以避免拉伸孔影响蒸镀图案,结构简单,设计巧妙。
本发明的附加方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解,其中:
图1是根据本发明实施例的掩膜板组件的示意图;
图2是根据本发明实施例的框架和遮挡条的示意图;
图3是根据本发明另一个实施例的框架和遮挡条的示意图;
图4是根据图3中所示的框架和遮挡条的侧视图;
图5是根据本发明实施例的掩膜板的示意图。
附图标记:
掩膜板组件100;
框架1;沉槽11;开口部12;
遮挡条2;
掩膜板3;蒸镀孔31;拉伸孔32;第一拉伸孔33a,第二拉伸孔32b,观察孔33;第一实体区域34;第二实体区域35。
具体实施方式
下面详细描述本发明的实施例,所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,仅用于解释本发明,而不能理解为对本发明的限制。
下面参考附图描述根据本发明实施例的掩膜板组件100。
如图1所示,根据本发明第一方面实施例的掩膜板组件100,包括框架1、遮挡条2和掩膜板3。
具体地,参照图2和图3,框架1可以形成为环状结构,框架1的中部形成开口部12。遮挡条2设在开口部12处且遮挡条2的两端固定在框架1上。遮挡条2可以形成为长条形,遮挡条2的长度方向的两端可以固定在框架1上。
例如,定义与框架1的端面所在的平面平行的一个平面为参考面,遮挡条2的中部在参考面上的正投影落在开口部12在参考面上的正投影内。其中,本申请中所述的“遮挡条2的中部”应作广义理解,即无需严格意义上的中部,遮挡条2长度方向的两端之间的位置均可以理解为本申请中的“遮挡条2的中部”。
掩膜板3固定在框架1上,掩膜板3上设有蒸镀孔31和拉伸孔32,蒸镀孔31与开口部12相对,拉伸孔32与遮挡条2相对以通过遮挡条2遮挡拉伸孔32。蒸镀材料可以通过蒸镀孔31蒸镀至样品上。拉伸孔32可以形成在掩膜板3上未设有蒸镀孔31的实体区域上。由此,通过在掩膜板3上设置拉伸孔32,并在框架1上设置用于遮挡拉伸孔32的遮挡条2,可以减小掩膜板3上实体区域的面积,从而可以减小掩膜板3上的张紧力,使得掩膜板3具有良好的活动性,进而可以保证蒸镀过程中磁力分配均匀,提高掩膜板3与待蒸镀件之间的贴合度,使得边缘混色良好,提高了蒸镀效果,同时可以避免拉伸孔32影响蒸镀图案。
在本发明的一些实施例中,遮挡条2在参考面上正投影的垂直于遮挡条2延伸方向的尺寸大于或等于拉伸孔32在参考面上的正投影在该方向上的尺寸。由此,可以保证遮挡条2能完全遮住拉伸孔32,避免蒸镀材料透过拉伸孔32蒸镀至待蒸镀件上。
需要说明的是,蒸镀过程中,待蒸镀件设置在掩膜板3背离框架1的一侧,并在待蒸镀件背离掩膜板3的一侧设置磁力吸附装置,通过磁力吸附装置吸附掩膜板3,以使掩膜板3与待蒸镀件之间能够紧密贴合。本申请的发明人发现,若掩膜板3上的实体区域的面积较大,会增大掩膜板3上的张紧力,使得掩膜板3的活动性变差,导致磁力吸附装置无法吸附掩膜板3上实体区域较大的位置,极大地影响了掩膜板3与待蒸镀件之间的紧密贴合度,使得磁力分配不均,进而出现因贴合导致的边缘混色等不良现象,影响蒸镀效果。
根据本发明实施例的掩膜板组件100,通过在掩膜板3上设置拉伸孔32,可以减小掩膜板3上实体区域的面积,从而可以减小掩膜板3上的张紧力,使得掩膜板3具有良好的活动性,进而可以保证蒸镀过程中磁力分配均匀,提高掩膜板3与待蒸镀件之间的贴合度,使得边缘混色良好,提高了蒸镀效果和产品良率。同时,通过在框架1上设置用于遮挡拉伸孔32的遮挡条2,可以通过遮挡条2遮挡拉伸孔32,避免蒸镀材料通过拉伸孔32蒸镀至待蒸镀件上,从而可以避免拉伸孔32影响蒸镀图案,结构简单,设计巧妙。
根据本发明的一些实施例,拉伸孔32包括第一拉伸孔32a,掩膜板3包括蒸镀区域和连接区域,连接区域位于蒸镀区域外侧,蒸镀孔31形成在蒸镀区域,连接区域与框架1相连,连接区域和蒸镀区域之间形成过渡区域,第一拉伸孔32a设在过渡区域上。
在本申请中,“连接区域”指的是掩膜板3与框架1的相连的区域,“蒸镀区域”指的是最靠近掩膜板3边缘的一排蒸镀孔31的外侧边缘所围成的区域。蒸镀区域可以为方形区域、圆形区域等。“过渡区域”为位于连接区域和蒸镀区域之间的区域。过渡区域可以形成为环形区域。
其中,本申请中所述的方向“外”指的是由掩膜板3的中心指向掩膜板3的边缘的方向。另外,在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“左”、“右”、“竖直”、“水平”、“内”、“外”、“顺时针”、“逆时针”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
参照图1,连接区域可以与框架1相连,靠近掩膜板3边缘的一排或一列蒸镀孔31与连接区域之间的实体区域为过渡区域。通过将第一拉伸孔32a设置在过渡区域处,可 以减小掩膜板3蒸镀区域外周的张紧力,使得掩膜板3外周具有良好的活动性,进而可以保证蒸镀过程中磁力分配均匀,提高掩膜板3与待蒸镀件之间的贴合度,使得边缘混色良好,提高了产品良率。
根据本发明的一些实施例,第一拉伸孔32a为多个,多个第一拉伸孔32a在掩膜板3的周向上间隔设置。在本发明的描述中,“多个”的含义是两个或两个以上。
可以理解是,本申请中“掩膜板的周向”指的是掩膜板外轮廓的延伸方向。在本发明的一些实施例中,可以在靠近掩膜板3的各个边缘处均分别设有多个第一拉伸孔32a,在本发明的另一些实施例中,也可以在靠近掩膜板3的其中一部分边缘处设置多个第一拉伸孔32a。例如,如图1所示,可以在靠近掩膜板3的上边缘和下边缘处分别设有多个第一拉伸孔32a。在发明的另一些实施例中,也可以在靠近掩膜板3的左边缘和右边缘处分别设置多个第一拉伸孔32a。由此,在拉伸过程中,可以使得掩膜板3的受力均匀,从而可以保证蒸镀过程中磁力分配均匀,提高掩膜板3与待蒸镀件之间的贴合度,使得边缘混色良好,提高了产品良率。
根据本发明的一些实施例,掩膜板3上设有观察孔33,观察孔33由掩膜板3的边缘向内凹入,第一拉伸孔32a设在观察孔33的邻近掩膜板3中心的一侧,至少一个第一拉伸孔32a与观察孔33连通。观察孔33可以用于观察、检测待蒸镀件上蒸镀材料的厚度等。如图1所示,观察孔33可以由掩膜板3第一方向上的两侧边缘向内凹入形成,观察孔33可以为多个,多个观察孔33在掩膜板3的周向上间隔设置。第一拉伸孔32a位于观察孔33邻近蒸镀区域的一侧。多个第一拉伸孔32a中的其中一部分与观察孔33连通,或者每个第一拉伸孔32a均与观察孔33连通。由此,通过将第一拉伸孔32a设在观察孔33的邻近蒸镀区域的一侧,并使得至少一个第一拉伸孔32a与观察孔33连通,可以简化掩膜板3的加工工艺,提高加工效率,降低加工成本。
根据本发明的一些实施例,蒸镀孔31为多个,多个蒸镀孔31排成多排多列,拉伸孔32包括第二拉伸孔32b,第二拉伸孔32b设在相邻的两排蒸镀孔31和/或相邻的两列蒸镀孔31之间。具体而言,多个蒸镀孔31可以排成多排多列,例如M排N列。其中,可以将第二拉伸孔32b设在相邻的两排蒸镀孔31之间,也可以将第二拉伸孔32b设在相邻的两列蒸镀孔31之间,还可以将第二拉伸孔32b设在相邻的两排蒸镀孔31和相邻的两列蒸镀孔31之间。由此,可以减小掩膜板3蒸镀区域的张紧力,使得掩膜板3整体具有良好的活动性,进而可以保证蒸镀过程中磁力分配均匀,提高掩膜板3与待蒸镀件之间的贴合度,使得边缘混色良好,提高了产品良率。
根据本发明的一些实施例,掩膜板3具有在第一方向上间隔设置的多个第一实体区域34和在第二方向上间隔设置的多个第二实体区域35,第一方向与第二方向垂直,多 个第一实体区域34的宽度相等,和/或多个第二实体区域35的宽度相等。也就是说,多个第一实体区域34的宽度相等,或者多个第二实体区域35的宽度相等,或者多个第一实体区域34的宽度相等且多个第二实体区域35的宽度相等。
需要说明的是,本申请中所述的“第一方向与第二方向垂直”中的“垂直”应作广义理解。例如,第一方向和第二方向相交的夹角为80-100°即可理解为第一方向与第二方向垂直。
例如,在本发明的一些实施例中,第一方向可以为框架1的长度方向(例如图1中的上下方向),第二方向可以为框架1的宽度方向(例如图1中的左右方向)。其中,当第一实体区域34形成在相邻的两排蒸镀孔31之间时,第一实体区域34的宽度为相邻的两排蒸镀孔31之间的间距。当第一实体区域34形成在相邻的蒸镀孔31和拉伸孔32之间时,第一实体区域34的宽度可以为相邻的蒸镀孔31和拉伸孔32之间的间距。当第二实体区域35形成在相邻的两列蒸镀孔31之间时,第二实体区域35的宽度为相邻的两列蒸镀孔31之间的间距。当第二实体区域35形成在相邻的蒸镀孔31和拉伸孔32之间时,第二实体区域35的宽度可以为相邻的蒸镀孔31和拉伸孔32之间的间距。
由此,通过使多个第一实体区域34的宽度相等,和/或多个第二实体区域35的宽度相等,可以使得掩膜板3上的张紧力均匀,从而可以使得蒸镀过程中磁力分配均匀,提高了掩膜板3与待蒸镀件之间的贴合度,使得边缘混色良好,提高了蒸镀效果和产品良率。
根据本发明的一些实施例,遮挡条2位于框架1和掩膜板3之间。具体地,遮挡条2和掩膜板3均位于框架1的同一侧,且遮挡条2位于掩膜板3邻近框架1的的一侧。由此,可以通过遮挡条2遮挡拉伸孔32,且可以避免蒸镀过程中遮挡条2与其他部件之间形成干涉。
根据本发明的一些实施例,框架1上设有沉槽11,遮挡条2的两端均固定在沉槽11内。在本发明的一些实施例中,沉槽11可以由框架1的一侧表面朝向框架1的另一侧表面凹入形成。由此,通过在框架1上设置沉槽11,并将遮挡条2的两端固定在沉槽11内,可以减小掩膜板3与框架1之间的间隙,保证蒸镀效果。
根据本发明的一些实施例,遮挡条2的厚度小于或等于沉槽11的深度。例如,在图4的示例中,遮挡条2的厚度小于沉槽11的宽度。由此,可以避免遮挡条2凸出框架1的表面,从而可以消除掩膜板3与框架1之间的间隙,进一步地提高了蒸镀效果。
根据本发明的一些实施例,框架1为金属件,遮挡条2为不锈钢件,掩膜板3为因瓦合金件,遮挡条2和掩膜板3均焊接在框架1上。可选地,框架1为不锈钢件。由此,可以方便地将掩膜板3和遮挡条2焊接在框架1上,且可以提高掩膜板组件100的整体 结构强度。
根据本发明第二方面实施例的掩膜板组件100的加工方法,掩膜板组件100为根据上述实施例的掩膜板组件100。
具体地,掩膜板组件100包括框架1、遮挡条2和掩膜板3。参照图2和图3,框架1可以形成为环状结构,框架1的中部形成开口部12。遮挡条2设在开口部12处且遮挡条2的两端固定在框架1上。遮挡条2可以形成为长条形。掩膜板3固定在框架1上,掩膜板3上设有蒸镀孔31和拉伸孔32,蒸镀孔31与开口部12相对,拉伸孔32与遮挡条2相对以通过遮挡条2遮挡拉伸孔32。蒸镀材料可以通过蒸镀孔31蒸镀至样品上。拉伸孔32可以形成在掩膜板3上未设有蒸镀孔31的实体区域上。
由此,通过在掩膜板3上设置拉伸孔32,并在框架1上设置用于遮挡拉伸孔32的遮挡条2,可以减小掩膜板3上实体区域的面积,从而可以减小掩膜板3上的张紧力,使得掩膜板3具有良好的活动性,进而可以保证蒸镀过程中磁力分配均匀,提高掩膜板3与待蒸镀件之间的贴合度,使得边缘混色良好,提高了蒸镀效果,同时可以避免拉伸孔32影响蒸镀图案。
掩膜板组件100的加工方法包括:
提供框架1;
将遮挡条2的两端固定在框架1上;
将掩膜板3固定在框架1上,并使掩膜板3上的拉伸孔32与遮挡条2相对。
具体地,可以先将遮挡条2的两端焊接在框架1上,再将掩膜板3焊接在框架1上,其中,遮挡条2和掩膜板3位于框架1的同一侧。结构简单,加工方便。
根据本发明第二方面实施例的掩膜板组件100的加工方法,通过在掩膜板3上设置拉伸孔32,可以减小掩膜板3上实体区域的面积,从而可以减小掩膜板3上的张紧力,使得掩膜板3具有良好的活动性,进而可以保证蒸镀过程中磁力分配均匀,提高掩膜板3与待蒸镀件之间的贴合度,使得边缘混色良好,提高了蒸镀效果和产品良率。同时,通过在框架1上设置用于遮挡拉伸孔32的遮挡条2,可以通过遮挡条2遮挡拉伸孔32,避免蒸镀材料通过拉伸孔32蒸镀至待蒸镀件上,从而可以避免拉伸孔32影响蒸镀图案,结构简单,设计巧妙。
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结 合。
尽管已经示出和描述了本发明的实施例,本领域的普通技术人员可以理解:在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由权利要求及其等同物限定。

Claims (11)

  1. 一种掩膜板组件,其中,包括:
    框架,所述框架中部形成开口部;
    遮挡条,所述遮挡条设在所述开口部处且所述遮挡条的两端固定在所述框架上;和
    掩膜板,所述掩膜板固定在所述框架上,所述掩膜板上设有蒸镀孔和拉伸孔,所述蒸镀孔与所述开口部相对,所述拉伸孔与所述遮挡条相对以通过所述遮挡条遮挡所述拉伸孔。
  2. 根据权利要求1所述的掩膜板组件,其中,所述拉伸孔包括第一拉伸孔,所述掩膜板包括蒸镀区域和连接区域,所述连接区域位于所述蒸镀区域外侧,所述蒸镀孔形成在所述蒸镀区域,所述连接区域与所述框架相连,所述连接区域和所述蒸镀区域之间形成过渡区域,所述第一拉伸孔设在所述过渡区域上。
  3. 根据权利要求2所述的掩膜板组件,其中,所述第一拉伸孔为多个,多个所述第一拉伸孔在所述掩膜板的周向上间隔设置。
  4. 根据权利要求2或3所述的掩膜板组件,其中,所述掩膜板上设有观察孔,所述观察孔由所述掩膜板的边缘向内凹入,所述第一拉伸孔设在所述观察孔的邻近所述掩膜板中心的一侧且至少一个所述第一拉伸孔与所述观察孔连通。
  5. 根据权利要求1-4中任一项所述的掩膜板组件,其中,所述蒸镀孔为多个,多个蒸镀孔排成多排多列,所述拉伸孔包括第二拉伸孔,所述第二拉伸孔设在相邻的两排所述蒸镀孔和/或相邻的两列所述蒸镀孔之间。
  6. 根据权利要求5所述的掩膜板组件,其中,所述掩膜板具有在第一方向上间隔设置的多个第一实体区域和在第二方向上间隔设置的多个第二实体区域,所述第一方向与所述第二方向垂直,多个所述第一实体区域的宽度相等,和/或多个所述第二实体区域的宽度相等。
  7. 根据权利要求1-6中任一项所述的掩膜板组件,其中,所述遮挡条位于所述框架和所述掩膜板之间。
  8. 根据权利要求7所述的掩膜板组件,其中,所述框架上设有沉槽,所述遮挡条的两端均固定在所述沉槽内。
  9. 根据权利要求8所述的掩膜板组件,其中,所述遮挡条的厚度小于或等于所述沉槽的深度。
  10. 根据权利要求1-9中任一项所述的掩膜板组件,其中,所述框架为金属件,所述遮挡条为不锈钢件,所述掩膜板为因瓦合金件,所述遮挡条和所述掩膜板均焊接在所述框架上。
  11. 一种根据权利要求1-10中任一项所述的掩膜板组件的加工方法,其中,包括:
    提供框架;
    将遮挡条的两端固定在所述框架上;
    将掩膜板固定在所述框架上,并使所述掩膜板上的拉伸孔与所述遮挡条相对。
PCT/CN2021/072207 2021-01-15 2021-01-15 掩膜板组件及其加工方法 WO2022151368A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202180000032.XA CN115087923A (zh) 2021-01-15 2021-01-15 掩膜板组件及其加工方法
PCT/CN2021/072207 WO2022151368A1 (zh) 2021-01-15 2021-01-15 掩膜板组件及其加工方法
US18/026,293 US20230357914A1 (en) 2021-01-15 2021-01-15 Mask plate assembly and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/072207 WO2022151368A1 (zh) 2021-01-15 2021-01-15 掩膜板组件及其加工方法

Publications (1)

Publication Number Publication Date
WO2022151368A1 true WO2022151368A1 (zh) 2022-07-21

Family

ID=82446375

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/072207 WO2022151368A1 (zh) 2021-01-15 2021-01-15 掩膜板组件及其加工方法

Country Status (3)

Country Link
US (1) US20230357914A1 (zh)
CN (1) CN115087923A (zh)
WO (1) WO2022151368A1 (zh)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120183903A1 (en) * 2011-01-14 2012-07-19 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
CN103014618A (zh) * 2012-12-25 2013-04-03 唐军 蒸镀用掩模板及其制造方法
CN103695841A (zh) * 2013-11-28 2014-04-02 昆山允升吉光电科技有限公司 一种掩模组件的组装方法
CN205205218U (zh) * 2015-10-27 2016-05-04 唐军 掩模板的改良结构
US9837608B2 (en) * 2015-11-12 2017-12-05 Samsung Display Co., Ltd. Mask assembly and apparatus and method of manufacturing display apparatus using the same
CN108611596A (zh) * 2018-05-14 2018-10-02 昆山国显光电有限公司 掩膜板
CN108914057A (zh) * 2018-08-09 2018-11-30 武汉华星光电半导体显示技术有限公司 掩模组件和显示面板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120183903A1 (en) * 2011-01-14 2012-07-19 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
CN103014618A (zh) * 2012-12-25 2013-04-03 唐军 蒸镀用掩模板及其制造方法
CN103695841A (zh) * 2013-11-28 2014-04-02 昆山允升吉光电科技有限公司 一种掩模组件的组装方法
CN205205218U (zh) * 2015-10-27 2016-05-04 唐军 掩模板的改良结构
US9837608B2 (en) * 2015-11-12 2017-12-05 Samsung Display Co., Ltd. Mask assembly and apparatus and method of manufacturing display apparatus using the same
CN108611596A (zh) * 2018-05-14 2018-10-02 昆山国显光电有限公司 掩膜板
CN108914057A (zh) * 2018-08-09 2018-11-30 武汉华星光电半导体显示技术有限公司 掩模组件和显示面板

Also Published As

Publication number Publication date
CN115087923A (zh) 2022-09-20
US20230357914A1 (en) 2023-11-09

Similar Documents

Publication Publication Date Title
TWI707964B (zh) 蒸鍍遮罩、附有框架之蒸鍍遮罩、有機半導體元件之製造方法及蒸鍍遮罩之製造方法
TWI661071B (zh) 蒸鍍遮罩、蒸鍍遮罩準備體、蒸鍍遮罩之製造方法、圖案之形成方法、及有機半導體元件之製造方法
TWI665320B (zh) 蒸鍍遮罩、蒸鍍遮罩之製造方法、及有機半導體元件之製造方法
WO2018000949A1 (zh) 掩膜板及其制造方法
WO2019184224A1 (zh) 显示面板及制作显示面板用掩模板
KR20170112673A (ko) 증착용마스크 및 이를 이용한 oled 패널
US20230085315A1 (en) Mask, and manufacturing method for mask
CN108998756B (zh) 支撑条
CN107653437B (zh) 蒸镀用的复合掩模板
CN106367716B (zh) 掩模板及显示面板的制作方法
US11066738B2 (en) Mask plates and display panels
WO2020113751A1 (zh) 一种掩膜板
WO2021027794A1 (zh) 掩膜板组件
WO2022151368A1 (zh) 掩膜板组件及其加工方法
CN210916231U (zh) 一种掩膜版
JP6597863B2 (ja) 蒸着マスク、フレーム付き蒸着マスク、有機半導体素子の製造方法、及び蒸着マスクの製造方法
US20220098718A1 (en) Mask and evaporation system
US20230295790A1 (en) Full Mask Sheet, Mask Sheet Assembly and Evaporation Device
WO2019218606A1 (zh) 掩膜板、显示器件、显示面板及显示终端
US20190292647A1 (en) Masks and display devices
TW202246547A (zh) 掩膜板
KR101199623B1 (ko) 대면적 기판용 판 마스크

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21918572

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 23/10/2023)