WO2022142361A1 - 耦合结构、谐振结构、低频辐射单元、天线及电磁边界 - Google Patents

耦合结构、谐振结构、低频辐射单元、天线及电磁边界 Download PDF

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Publication number
WO2022142361A1
WO2022142361A1 PCT/CN2021/112250 CN2021112250W WO2022142361A1 WO 2022142361 A1 WO2022142361 A1 WO 2022142361A1 CN 2021112250 W CN2021112250 W CN 2021112250W WO 2022142361 A1 WO2022142361 A1 WO 2022142361A1
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Prior art keywords
conductor
conductor strips
coupling structure
low
potential
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PCT/CN2021/112250
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English (en)
French (fr)
Inventor
赖展军
郑之伦
李明超
苏国生
梁嘉驹
刘培涛
王强
Original Assignee
京信通信技术(广州)有限公司
京信射频技术(广州)有限公司
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Priority to EP21913109.1A priority Critical patent/EP4274019A4/en
Priority to US18/269,911 priority patent/US20240250438A1/en
Publication of WO2022142361A1 publication Critical patent/WO2022142361A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
    • H01Q9/285—Planar dipole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H01P1/20327—Electromagnetic interstage coupling
    • H01P1/20354—Non-comb or non-interdigital filters
    • H01P1/20381—Special shape resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/026—Coplanar striplines [CPS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/24—Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
    • H01Q21/26—Turnstile or like antennas comprising arrangements of three or more elongated elements disposed radially and symmetrically in a horizontal plane about a common centre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/321—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors within a radiating element or between connected radiating elements

Definitions

  • the present invention relates to the technical field of mobile communication, and in particular, the present invention relates to a coupling structure and a resonance structure, a radiating element, a low-frequency antenna and an electromagnetic boundary using the coupling structure.
  • Coupling structures are often used as feed structures for antenna radiation units. , radiating arms, electromagnetic boundaries and transmission lines with filtering properties.
  • FIG. 1 is a schematic diagram of a conventional coupling structure. It can be seen from the figure that the direction of the electric field in the coupling structure is from the conductor with high potential (positive charge) to the conductor with low potential (negative charge). Concentrate on the lower surface of the upper conductor and the upper surface of the lower conductor. Therefore, in order to achieve a large coupling amount, a wider microstrip line or a metal layer is used as much as possible to form a coupling structure, or a multi-layer intermetal coupling is used to achieve the required coupling amount.
  • the coupling structure when the coupling structure is applied to an antenna, such as when the radiating element is used as a radiating arm, the area of the coupling structure formed by the wide microstrip line (or metal layer) is large, while providing sufficient coupling amount, when the neighbors are placed When the other radiating units of the radiator are in the working state, it is easy to generate a strong induced current, which in turn affects the performance indicators of other radiating units placed by the neighbors.
  • the primary object of the present invention is to provide a coupling structure which is simple in structure and can be advantageously reduced in size on the basis of providing the required coupling amount.
  • Another object of the present invention is to provide a resonance structure using the above-mentioned coupling structure.
  • Another object of the present invention is to provide a low-frequency radiation unit using the above-mentioned resonance structure.
  • Another object of the present invention is to provide an antenna using the above-mentioned radiating element.
  • Another object of the present invention is to provide an electromagnetic boundary using the above resonant structure.
  • the present invention provides the following technical solutions:
  • a coupling structure comprising at least two layers of conductors in a capacitive coupling relationship, each layer of conductors includes a plurality of side-by-side conductor strips with gaps, and among the plurality of conductor strips in the same layer, at least one There is a potential difference between the conductor strips and the adjacent conductor strips during operation. Between the conductor strips of two different layers, there is a potential difference between at least one conductor strip of one layer and at least one conductor strip of the other layer, and in the mutual projection direction of each other at least partially overlap.
  • the conductor strips of each layer of conductors work at two relative potentials of high potential and low potential, part of the conductor strips work at high potentials, and another part of the conductor strips that have a coupling relationship with them work at low potentials.
  • a conductor strip operating at a high potential is connected to one conductor segment, and a conductor strip operating at a low potential is connected to another conductor segment.
  • the coupling structure further includes a dielectric board, the conductors of each layer are stacked along the thickness direction of the dielectric board, and the two conductor segments are provided on the surface of the dielectric board, and the conductor segments are located on the same layer and work in the same layer.
  • the potential conductor strips are integrally formed, and the conductor strips located on two different layers are electrically connected to the conductor segments through metallized vias.
  • the two conductor segments are arranged at two ends of the conductor strip.
  • At least two conductor strips working at one potential are provided with two conductor strips working at another potential.
  • the number of conductor strips operating at a high potential is the same or different than the number of conductor strips operating at a low potential.
  • the sum of the projected areas of the conductor strips is greater than the sum of the projected areas of the gaps between the conductor strips.
  • the sum of the widths of the conductor strips is greater than the sum of the widths of the gaps between the conductor strips.
  • the present invention relates to a resonant structure comprising a capacitor and an inductor, wherein the capacitor and the inductor are connected in series or in parallel, wherein the capacitor is formed by the above-mentioned coupling structure.
  • the inductor includes a zigzag conductor or a wrap-around conductor provided on a dielectric substrate.
  • the present invention relates to a low-frequency radiation unit, comprising a radiation arm, and the radiation arm includes the above-mentioned resonance structure.
  • the radiation arm is a ring-shaped radiation arm formed by connecting a plurality of the resonance structures.
  • the present invention relates to an antenna, comprising a low-frequency radiation unit, and the low-frequency radiation unit is the above-mentioned low-frequency radiation unit.
  • the antenna further includes a high-frequency radiation unit, and the high-frequency radiation unit is arranged between two adjacent low-frequency radiation units, and/or the high-frequency radiation unit is arranged adjacent to the low-frequency radiation unit. between the two radiating arms.
  • the antenna further includes an electromagnetic boundary, and the electromagnetic boundary is arranged around the low-frequency radiation unit.
  • the electromagnetic boundary is formed by connecting a plurality of the resonant structures.
  • the present invention relates to an electromagnetic boundary, which is arranged between radiating elements to avoid interference between the radiating elements, the electromagnetic boundary including the resonant structure.
  • a plurality of conductor strips are separated on each layer by separating conductors with a coupling relationship between two layers, and the conductor strips have a potential difference with the adjacent conductor strips on the same layer during operation. , so that the direction of the electric field can have two paths from the conductor with high potential to the conductor with low potential in the same layer and to the conductor with low potential in another layer.
  • the conductor carries more charges, so that more A large amount of coupling, that is, when the same amount of coupling is achieved, the size of the coupling structure of the present invention is smaller.
  • the conductor strips working at the same potential are connected to one conductor segment, and the conductor strips working at another potential are connected to another conductor segment, and the specific performance is that the conductor strips located on the same layer as the conductor segments are connected.
  • the conductor strip and the conductor segment are integrally formed, and the conductor strips located on two different layers from the conductor segment are connected to the conductor segment through metallized vias. Only two conductor segments are required to apply voltage to all the conductor strips to form a coupling relationship.
  • the structure is relatively simple.
  • the above-mentioned coupling structure has the advantages of the coupling structure.
  • the resonance structure can achieve a lower resonance frequency.
  • the size of the radiation arm is smaller, which is beneficial to the miniaturization of the antenna.
  • the size of the antenna is smaller and the radiation performance is better.
  • the electromagnetic boundary of the present invention due to the above-mentioned resonant structure, it exhibits band-pass characteristics in the low frequency frequency band and high resistance characteristics in the high frequency frequency band, which can be applied to the dual-frequency antenna to improve the performance of the low frequency vibrator, and at the same time weaken the resistance to high frequency.
  • Figure 1 is an electromagnetic schematic diagram of a conventional coupling structure
  • FIG. 2a is a schematic structural diagram of a coupling structure provided by an embodiment of the present invention.
  • 2b is a schematic structural diagram of a coupling structure provided by another embodiment of the present invention.
  • Fig. 3 is the A-A sectional view of the coupling structure shown in Fig. 2b, showing the direction of the electric field when the coupling structure works;
  • Fig. 4 is the equivalent circuit diagram of the coupling structure shown in Fig. 2b;
  • Fig. 5 is the coupling structure of the present invention and the conventional coupling structure dual-port S21 parameter simulation diagram;
  • FIG. 6 is a simulation diagram of the single-port S11 parameter of the coupling structure of the present invention and the conventional coupling structure;
  • FIG. 7 is a schematic structural diagram of a coupling structure according to another embodiment of the present invention, showing a plurality of conductor strips of a single-layer conductor and their mutual relationships;
  • FIG. 8 is a schematic structural diagram of a coupling structure according to another embodiment of the present invention, showing a plurality of conductor strips of a single-layer conductor and their mutual relationships;
  • FIG. 9 is a schematic structural diagram of a resonant structure used in a linear vibrator according to an embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of the resonant structure of another embodiment of the present invention used for a linear vibrator;
  • Figure 11 is a structural comparison diagram of three linear vibrators
  • Fig. 12 is a simulation diagram of the return loss of the three linear vibrators shown in Fig. 11;
  • FIG. 13 is a perspective view of a low-frequency radiation unit according to an embodiment of the present invention.
  • FIG. 14 is a schematic diagram of a radiation surface of a low-frequency radiation unit according to another embodiment of the present invention.
  • Figure 15 is a perspective view of the low frequency radiation unit shown in Figure 14;
  • 16 is a schematic structural diagram of an electromagnetic boundary according to an embodiment of the present invention.
  • FIG. 17 is a schematic structural diagram of an electromagnetic boundary according to another embodiment of the present invention.
  • Fig. 19 is the frequency response graph of the electromagnetic boundary of the present invention.
  • FIG. 20 is a schematic structural diagram of an antenna according to an embodiment of the present invention.
  • the term “including” and variations thereof are open-ended inclusions, ie, "including but not limited to”.
  • the term “connected” may be directly connected or indirectly connected through intermediate members (elements).
  • the term “one embodiment” means “at least one embodiment”; the term “another embodiment” means “at least one additional embodiment”; the term “some embodiments” means “at least some embodiments”. Relevant definitions of other terms will be given in the description below.
  • the present invention relates to a coupling structure 10, which mainly exhibits capacitive coupling characteristics, which can be used as a capacitor alone, or can be connected with an inductive element to form an LC resonance structure, which is suitable for use in
  • the feed structure of the base station antenna, the radiation arm of the radiation unit and the electromagnetic boundary are used to reduce the size of the coupling structure on the premise of providing the required coupling amount, which is conducive to the miniaturized design of the antenna.
  • the coupling structure is used in The LC resonant structure mainly reflects the capacitance characteristics, so that the resonant structure has a low resonant frequency, and has the characteristics of low frequency band pass and high frequency band resistance, which can enhance the radiation performance of the multi-frequency antenna.
  • the coupling structure 10 includes at least two layers of conductors, and the two adjacent layers of conductors are stacked, so that when a voltage is applied to the two adjacent layers of conductors, there is a potential difference between the two layers of conductors to form a capacitance, that is, a capacitive coupling relationship. .
  • the at least two layers of conductors can be supported by the dielectric plate 3.
  • the dielectric plate is a multi-layer dielectric. board, the multilayer conductors are arranged in layers along the thickness direction of the dielectric board, and the two layers of conductors are respectively arranged on the two outermost surfaces of the dielectric board.
  • the conductors can also be supported by means of point contact between the dielectric support and the conductors, and the conductors located on the upper layer are suspended relative to the conductors on the lower layer.
  • the conductors are arranged in layers and layers, so that a coupling gap is formed between the conductors of the two different layers, and after a voltage is applied, a coupling relationship can be formed between the conductors of the two different layers.
  • the coupling structure includes two layers of conductors 1 and 2 and a dielectric plate 3 .
  • the two layers of conductors 1 and 2 are respectively disposed on the front and the back of the dielectric plate 3 .
  • Each layer of conductors includes a plurality of conductor strips, which are arranged side by side with gaps; the mutual projections of the upper layer conductor strip and the lower layer conductor strip at least partially overlap between the conductor strips of two adjacent layers of conductors.
  • the plurality of conductor strips of each layer of conductors work at two potentials with a potential difference between a high potential and a low potential, and a voltage is applied to the conductor strips, that is, when the conductor strips work, some of the conductor strips are at a high potential , and the other part of the conductor strip has a low potential, so that an electric field from a high potential to a low potential can be formed, that is, a coupling relationship is formed between the conductor strips of the same layer.
  • the plurality of conductor strips located in the upper layer and the plurality of conductor strips located in the lower layer are in a one-to-one correspondence with each other and the projections overlap each other.
  • the potentials are opposite so that an electric field is formed between each two corresponding conductor strips of the two distinct layers directed from a high potential to a low potential.
  • the coupling structure has four conductor strips, two conductor strips per layer.
  • the conductor strips 11 and 12 are located on the front side of the dielectric board 3
  • the conductor strips 21 and 22 are located on the reverse side of the dielectric board 3
  • the two conductor strips on the same side are separated by a gap.
  • the conductor strip 11 is positively charged and has a high potential, and the conductor strip 12 is negatively charged and has a low potential; for the dielectric plate
  • the conductor strip 21 and the conductor strip 22 on the opposite side the conductor strip 21 is positively charged and has a high potential, and the conductor strip 22 is negatively charged and has a low potential, so that the two conductor strips on the same layer carry different charges and lead to opposite potentials , with a potential difference, can form an electric field directed from the high-potential conductor strip to the low-potential conductor strip.
  • the conductor strip 11 and the conductor strip 22 are facing each other and the potential is opposite, and the conductor strip 12 and the conductor strip 21 are facing each other and the potential is opposite, so it can be formed between the two different layers of conductor strips
  • the electric field directed from a high-potential conductor strip to a low-potential conductor strip.
  • the path of the electric field from the high-potential conductor strip to the low-potential conductor strip includes the path inside the dielectric plate and the path located on the surface of the dielectric plate, so that the front surface of the conductor strip and the The opposite side can carry charges, and can carry more charges than the conventional coupling structure, so it has a larger coupling capacitance.
  • FIG. 4 is an equivalent circuit diagram of the coupling structure provided by the present invention, which shows that the coupling amount of the coupling structure has both a capacitance C1 and a C2. Compared with the conventional coupling structure, the coupling amount of C2 is increased.
  • the above-mentioned coupling structure and the conventional coupling structure with the same projection size are used, and the two-port S 21 parameter and the single-port S 11 parameter are calculated for them.
  • the simulation diagrams of the dual-port S21 parameters and the single-port S11 parameters of the coupling structure shown in Figure 5 and Figure 6 are formed.
  • the parameter values shown in Table 1 can be calculated.
  • the coupling amount of the conventional surface coupling structure only has the capacitance C1
  • the coupling amount of the coupling structure of the present invention has the capacitance C1 and the capacitance C2.
  • the capacitance of the structure is higher than that of the conventional coupling structure and has better coupling effect, which helps to improve the conduction characteristics of the coupling structure in high frequency applications.
  • This feature can also be equivalently described as: if the capacitance value required by the design is the same, the new coupling structure can have a smaller size, which is beneficial to realize the miniaturization of the device.
  • each layer of conductors has four conductor strips. Taking four conductor strips of one layer of conductors as an example, two conductor strips 11 and 13 work at high potential. The two conductor strips 12 and 14 work at low potential, and the four conductor strips are alternately arranged in a manner of having a potential difference, so as to form a coupling relationship between every two adjacent conductor strips on the same layer, which can achieve greater amount of coupling.
  • the number of conductor strips operating at the two potentials may or may not be equal, and in one embodiment, the number of conductor strips operating at one potential is greater than the number of conductor strips operating at the other potential to achieve a specific amount of coupling.
  • the shaded conductor strips 12 , 14 , 16 , 18 work at one potential
  • the blank conductor strips 11 , 13 , 15 , 17 work at another potential.
  • two adjacent conductor strips 15 and 17 working at the same potential can be provided with two conductor strips 16 and 18 working at another potential.
  • a pointing electric field is formed between the conductor strips with opposite potentials (that is, there is a potential difference), which has a coupling relationship.
  • multiple conductor strips in the same layer can apply multiple voltages, so that the potential between multiple conductor strips increases in one direction to form a gradual electric field, so that a coupling relationship can be formed between two adjacent conductor strips , to increase the amount of coupling.
  • the mutual projections of the corresponding conductor strips of the upper and lower layers may not completely overlap, and the projections between the conductor strips having the potential difference at least partially overlap, and the coupling function can also be realized.
  • the coupling structure there is a potential difference between at least one conductor strip and an adjacent conductor strip when a voltage is applied to work, thereby generating an electric field directed from a conductor strip with a high potential to a conductor strip with a low potential, forming a capacitive coupling relationship.
  • at least one conductor strip of one layer has a potential difference with at least one conductor strip of the other layer during operation, and there is an overlapping area on the projection of each other, which can also be formed by a high potential.
  • the electric field of the conductor band with the lower potential is formed into a capacitive coupling relationship.
  • the coupling structure of the present invention a high-potential to low-potential electric field is formed between conductor strips of two different layers, and a high-potential to low-potential electric field is also formed between adjacent conductor strips of the same layer
  • the coupling structure of the present invention is band coupling, has more coupling paths, and realizes a larger coupling amount. In other words, when the same coupling amount is realized, the coupling structure of the present invention size is smaller.
  • the coupling structure further includes two conductor segments 4, which are used to connect with external transmission lines to connect the voltage to the coupling structure, and the conductor segments 4 specifically include a first conductor A segment 41 and a second conductor segment 42, the first conductor segment 41 and the second conductor segment 42 are provided on one surface of the dielectric plate 3 and connected with the conductor strip.
  • the conductor strips 11 , 21 operating at a high potential are connected to the second conductor segment 42
  • the conductor strips 12 , 22 operating at a low potential are connected to the first conductor segment 41
  • the conductor strips 11 and 13 operating at a high potential are connected to the second conductor segment 42
  • the conductor strips 12 and 14 operating at a low potential are connected to the first conductor segment 41
  • the conductor strips are in a manner of having a potential difference between them. Alternate settings.
  • the conductor strips are arranged in layers on the dielectric plate, and there are at least two layers, and the conductor segments are arranged on the surface of the dielectric plate (that is, one layer on the surface of the dielectric plate).
  • energy i.e., the conductor segment provides the required charge to the conductor strip
  • the conductor strip on the same layer as the conductor segment is integrally formed with the conductor segment, and the conductor strip on the same layer as the conductor segment is metallized.
  • the holes are connected with the conductor segments, so that the conductor strips can be energized through the two conductor segments, and each layer of conductors has conductor strips that work at two different working potentials: high potential and low potential, so that the coupling structure can be energized.
  • the circuit layout is more concise.
  • the first conductor segment and the second conductor segment are arranged at both ends of the conductor strip, so that the input and output of the circuit are arranged at both ends of the conductor strip when it is applied to the circuit, which is convenient for circuit design.
  • the capacitive coupling relationship is formed between the two layers of conductors.
  • the coupling amount is increased.
  • the amount of coupling is reduced. Size; compared with the coupling structure of the multi-layer PCB, only the single-layer circuit board can achieve the coupling amount target and reduce the cost.
  • the coupling structure has multi-layer conductors, and the multi-layer conductors are stacked along the thickness direction of the dielectric plate.
  • the arrangement of each layer of conductors and the relationship between the two different layers of conductors are the same as those in the above-mentioned embodiment, and are not described in detail here. Thereby, a coupling relationship can be formed between the conductor strips of every two adjacent layers of conductors, so that a larger coupling amount can be realized.
  • the plurality of conductor strips of each layer of conductors can be cut from planar conductors, wherein adjacent conductors have gaps, and along the direction of conductor stacking, the sum of the projected areas of the conductor strips is greater than the projection of the gaps between the conductor strips sum of areas.
  • the sum of the widths of the conductor strips is greater than the sum of the widths of the gaps between the conductor strips, so that the area of the removed conductors is smaller than the newly added area that can carry charges, thus compared to the conventional coupling structure. A larger amount of coupling can be achieved.
  • the present invention relates to a resonant structure, which is a practical application of the above-mentioned coupling structure, which can be applied to antenna elements for radiating signals.
  • the resonant structure is embodied in that the coupling structure 10 and the inductor 20 are connected in series (or in parallel) to form an LC series resonant structure (or an LC parallel resonant structure), which has the characteristics of conducting conduction at the resonant frequency and exhibiting high impedance when deviating from the resonant frequency, After it is used in the radiation arm, the radiation arm will have band-pass filtering characteristics, and the size of the radiation arm will be further reduced.
  • the inductor is a zigzag inductor, specifically a zigzag conductor disposed on a dielectric plate and having inductance characteristics, which is connected to a conductor segment in the coupling structure to realize zigzag Type inductor and coupling structure in series.
  • the inductor is a wrap-around inductor, specifically a wrap-around conductor arranged on a dielectric plate and having inductive characteristics, which is connected to a conductor segment in the coupling structure to achieve A wraparound inductor in series with a coupling structure.
  • the lengths of the three calculation models diople_1, dipole_2 and dipole_3 are set to be the same, wherein, diople_1 is a conventional symmetrical vibrator, dipole_2 is a symmetrical vibrator loaded with a wrap-around inductance, and dipole_3 is a symmetrical vibrator loaded with an LC series resonant circuit composed of the coupling structure of the present invention and a wrap-around inductance, and defines the medium used by the three vibrators
  • the parameters of board 3 are the same, and the return loss calculated by the simulation software is shown in Figure 12.
  • the resonant frequency of the symmetrical vibrator using the coupling structure of the present invention plus the wrap-around inductor is the lowest, which also means that if the symmetrical vibrator with the same resonant frequency is designed, the structure of dipole_3 can have the smallest size.
  • the present invention relates to a low-frequency radiation unit, including a radiation surface and a feeding balun 5 for supporting and feeding the radiation surface, wherein the radiation surface includes a cross-shaped radiating surface.
  • the four radiating arms are arranged, and the radiating arms are preferably annular radiating arms, which are formed by connecting the above-mentioned resonant structures.
  • a single coupling structure has four conductor strips; in the low-frequency radiation unit shown in FIG. 15, a single coupling structure has eight conductor strips. Compared with the coupling structure of four conductor strips, A larger amount of coupling can be achieved.
  • the resonant frequency is lower than that of the radiating arm using the conventional resonant structure, so the size of the radiating arm can be reduced, which is beneficial to the miniaturization of the antenna.
  • the present invention further relates to an antenna 1000 , which includes the above-mentioned low-frequency radiation unit 100 , a high-frequency radiation unit 200 and an electromagnetic boundary 300 , wherein the high-frequency radiation unit is arranged at two adjacent low-frequency radiation units. Between the radiation units, and/or, the high-frequency radiation unit is arranged between two adjacent radiation arms of the low-frequency radiation unit, the electromagnetic boundary 300 is arranged around the low-frequency radiation unit 100 and is used to reduce the interference between the radiation units, Enhance the radiation performance of the antenna.
  • the resonant frequency is lower than that of the radiating arm using the conventional resonant structure, so the size of the radiating arm can be reduced, which is beneficial to the miniaturization of the antenna.
  • the band-pass characteristic of the electromagnetic boundary is configured to be the same as that of the low-frequency radiation unit 100 and exhibits high resistance characteristics in the frequency band of the high-frequency radiation unit, the performance of the low-frequency radiation unit can be improved while the influence on the high-frequency radiation unit is reduced.
  • the coupling structure of the present invention can also be applied to the electromagnetic boundary. Therefore, referring to FIGS. 16 to 19 , as a fifth aspect, the present invention also provides an electromagnetic boundary applying the above-mentioned resonance structure, which is connected by a plurality of the above-mentioned resonance structures It is used for setting between radiating units to reduce the interference between radiating units and enhance the radiation performance of the antenna.
  • the coupling structure has a dielectric plate, wherein the length direction of the conductor strip is parallel to the length direction of the dielectric plate; in the electromagnetic boundary shown in FIG. 17 , the coupling structure has a dielectric plate, wherein the conductor The length of the tape is perpendicular to the length of the media sheet.
  • the extending direction of the conductor strip can be set by the technical personnel according to actual needs, so as to reasonably utilize the space of the dielectric plate and facilitate circuit design.
  • the electromagnetic boundary of the present invention can be regarded as a cascade of multiple resonant structures.
  • the frequency response characteristics of the circuit are shown in Figure 19.
  • the band-pass characteristics presented by the electromagnetic boundary make the new electromagnetic boundary can be used in multi-frequency antennas to improve the radiating element index of a specific frequency band.

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Abstract

本发明提供了一种耦合结构及应用该耦合结构的谐振结构、低频辐射单元、天线和电磁边界。其中，耦合结构包括至少两层具有容性耦合关系的导体，每层导体均包括多个并排且具有间隙的导体带，相同一层的多个导体带中，至少一个导体带在工作时与相邻导体带存在电势差，相异两层的导体带之间，其中一层的至少一个导体带与另一层的至少一个导体带存在电势差，且在彼此相互投影方向上至少部分重叠。由此，在工作时，一个导体带与相同一层相邻且具有电势差的另一个导体带之间可形成耦合关系，与另一层一个相对且具有电势差的导体带也具有耦合关系，可实现更大耦合量，有利于缩小耦合结构的尺寸，进而有利于实现天线小型化和增强辐射性能。

Description

耦合结构、谐振结构、低频辐射单元、天线及电磁边界 技术领域
本发明涉及移动通信技术领域，具体而言，本发明涉及一种耦合结构及应用该耦合结构的谐振结构、辐射单元、低频天线和电磁边界。
背景技术
随着移动通信系统的发展，基站天线和滤波器、合路器、双工器等用于通信系统的产品和部件也得到了快速的发展，耦合结构常被用于天线辐射单元的馈电结构、辐射臂、电磁边界和具有滤波特性的传输线路当中。
众所周知地，耦合结构的耦合量(在容性耦合结构中一般指电容)与电荷量成正比，也关联于具有电势差的极板的重叠面积。请参考图1，图1为常规耦合结构的原理图，从图上可以看出，耦合结构中电场方向由高电势(带正电荷)的导体指向低电势(带负电荷)的导体，电荷主要集中于上层导体的下表面和下层导体的上表面。因而，为了实现大的耦合量，尽可能采用较宽的微带线或金属层来构成耦合结构，或者采用多层金属间耦合来实现所需耦合量。
然而，在耦合结构应用于天线中，例如应用于辐射单元作为辐射臂使用时，由宽微带线(或金属层)形成的耦合结构面积较大，在提供足够耦合量的同时，当邻居放置的其他辐射单元处于工作状态时，容易产生较强的感应电流，进而影响邻居放置的其他辐射单元的性能指标。
而采用多层PCB制作耦合器件以实现所需大耦合量，工艺较为复杂，成本较高。
发明内容
本发明的首要目的旨在提供一种结构简单并可有利于在提供所需耦合量基础上缩小尺寸的耦合结构。
本发明的另一目的旨在提供一种采用上述耦合结构的谐振结构。
本发明的另一目的旨在提供一种采用上述谐振结构的低频辐射单元。
本发明的另一目的旨在提供一种采用上述辐射单元的天线。
本发明的另一目的旨在提供一种采用上述谐振结构的电磁边界。
为实现以上目的，本发明提供以下技术方案：
第一方面，提供了一种耦合结构，包括至少两层具有容性耦合关系的导体，每层导体均包括多个并排且具有间隙的导体带，相同一层的多个导体带中，至少一个导体带在工作时与相邻导体带存在电势差，相异两层的导体带之间，其中一层的至少一个导体带与另一层的至少一个导体带存在电势差，且在彼此相互投影方向上至少部分重叠。
可选地，每层导体的导体带均工作于高电势和低电势两种相对电势，部分导体带工作于高电势，与其具有耦合关系的另一部分导体带工作于低电势。
可选地，工作于高电势的导体带连接于一导体段，工作于低电势的导体带连接于另一导体段。
进一步地，所述耦合结构还包括介质板，各层所述导体沿介质板厚度方向层叠设置，两个所述导体段设于介质板的表面，导体段与位于其相同一层且工作于同一电势的导体带一体成型，与位于其相异两层的导体带通过金属化过孔与导体段电连接。
可选地，两个所述导体段分设于导体带的两端。
可选地，相同一层的多个导体带中，相邻的每两个导体带之间因分别工作于两种不同电势而存在电势差。
可选地，相同一层的导体带中，至少两个工作于一种电势的导体带之间设置有两个工作于另一电势的导体带。
可选地，工作于高电势的导体带的数量与工作于低电势的导体带的数量相同或不同。
可选地，沿各层导体带层叠的方向上，导体带的投影面积之和大于导体带之间的间隙的投影面积之和。
可选地，在相同一层导体上，导体带的宽度之和大于导体带之间的间 隙的宽度之和。
作为第二方面，本发明涉及一种谐振结构，包括电容和电感，所述电容与电感串联或并联，其中，所述电容由上述耦合结构构成。
可选地，所述电感包括设于介质基板上的折线型导体或环绕型导体。
作为第三方面，本发明涉及一种低频辐射单元，包括辐射臂，所述辐射臂包括上述的谐振结构。
可选地，所述辐射臂为多个所述谐振结构连接形成的环形辐射臂。
作为第四方面，本发明涉及一种天线，包括低频辐射单元，所述低频辐射单元为上述的低频辐射单元。
进一步地，所述天线还包括高频辐射单元，所述高频辐射单元设于相邻两个所述低频辐射单元之间，和/或，高频辐射单元设于所述低频辐射单元相邻两个辐射臂之间。
进一步地，所述天线还包括电磁边界，所述电磁边界围设于低频辐射单元的四周。
可选地，所述电磁边界由多个所述谐振结构连接构成。
作为第四方面，本发明涉及一种电磁边界，用于设置在辐射单元之间用以避免辐射单元之间的干扰，所述电磁边界包括所述的谐振结构。
本发明提供的技术方案带来的有益效果是：
1.本发明的耦合结构中，通过将两层间具有耦合关系的导体在每层上分隔出多个导体带，并且使导体带在工作时与位于相同一层且相邻的导体带具有电势差，从而可使电场方向具有由电势高的导体带指向相同一层电势低的导体带和指向另一层电势低的导体带这两种路径，导体带上携带更多的电荷，从而可以实现更大的耦合量，也即，当实现相同耦合量时，本发明的耦合结构的尺寸更小。
2.本发明的耦合结构中，工作于同一电势的导体带与一导体段连接，工作于另一电势的导体带连接于另一导体段，并且具体表现为，与导体段位于相同一层的导体带与导体段一体成型，与导体段位于相异两层的导体带通过金属化过孔与导体段连接，只需通过两个导体段来对所有导体带施加电压，使之形成耦合关系，结构较为简单。
3.本发明的谐振结构中，由于采用上述耦合结构，具有耦合结构的优点。在其应用于辐射单元辐射臂，在辐射臂尺寸和介质材料相同时，采用该谐振结构可以实现更低的谐振频率。
4.本发明的辐射单元中，由于采用上述谐振结构，在实现相同谐振频率时，辐射臂的尺寸更小，有利于天线的小型化。
5.本发明的天线中，由于采用上述辐射单元，天线尺寸更小、辐射性能更优。
6.本发明的电磁边界中，由于采用上述谐振结构，其在低频频段呈带通特性，在高频频段呈现高阻特性，可应用于双频天线中改善低频振子的性能，同时减弱对高频振子的影响。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对本发明实施例描述中所需要使用的附图作简单地介绍。
图1为常规耦合结构的电磁原理图；
图2a为本发明一种实施方式提供的耦合结构的结构示意图；
图2b为本发明另一种实施方式提供的耦合结构的结构示意图；
图3为图2b所示耦合结构的A-A向截面图，示出该耦合结构工作时电场的指向；
图4为图2b所示耦合结构的等效电路图；
图5为本发明的耦合结构与常规耦合结构双端口S 21参数仿真图；
图6为本发明的耦合结构与常规耦合结构单端口S 11参数仿真图；
图7为本发明另一种实施方式的耦合结构的结构示意图，示出单层导体的多个导体带及其相互关系；
图8为本发明又一种实施方式的耦合结构的结构示意图，示出单层导体的多个导体带及其相互关系；
图9为本发明一种实施方式的谐振结构用于直线型振子的结构示意图；
图10为本发明另一种实施方式的谐振结构用于直线型振子的结构示 意图；
图11为三种直线型振子的结构对比图；
图12为图11所示三种直线型振子的回波损耗仿真图；
图13为本发明一种实施方式的低频辐射单元的立体图；
图14为本发明另一种实施方式的低频辐射单元的辐射面示意图；
图15为图14所示低频辐射单元的立体图；
图16为本发明一种实施方式的电磁边界的结构示意图；
图17为本发明另一种实施方式的电磁边界的结构示意图；
图18为本发明的电磁边界的等效电路图；
图19为本发明的电磁边界的频率响应曲线图；
图20为本发明一种实施方式的天线的结构示意图。
具体实施方式
下面将参照附图更详细地描述本发明的实施例。虽然附图中显示了本发明的某些实施例，然而应当理解的是，本发明可以通过各种形式来实现，而且不应该被解释为限于这里阐述的实施例，相反提供这些实施例是为了更加透彻和完整地理解本发明。应当理解的是，本发明的附图及实施例仅用于示例性作用，并非用于限制本发明的保护范围。
应当理解，本发明的方法实施方式中记载的各个步骤可以按照不同的顺序执行，和/或并行执行。此外，方法实施方式可以包括附加的步骤和/或省略执行示出的步骤。本发明的范围在此方面不受限制。
本文使用的术语“包括”及其变形是开放性包括，即“包括但不限于”。术语“连接”可以是直接相接，也可是通过中间部件(元件)间接连接。术语“一个实施例”表示“至少一个实施例”；术语“另一实施例”表示“至少一个另外的实施例”；术语“一些实施例”表示“至少一些实施例”。其他术语的相关定义将在下文描述中给出。
需要注意，本发明中提及的“第一”、“第二”等概念仅用于对装置、模块或单元进行区分，并非用于限定这些装置、模块或单元一定为不同的装置、模块或单元，也并非用于限定这些装置、模块或单元所执行的功能 的顺序或者相互依存关系。
参见图2至图8，作为第一方面，本发明涉及一种耦合结构10，主要表现为容性耦合特性，可作为一种电容单独使用，也可与电感元件连接构成LC谐振结构，适用于基站天线的馈电结构、辐射单元的辐射臂及电磁边界中，用于在提供所需耦合量的前提下缩小耦合结构的尺寸，进而有利于天线的小型化设计，另外，该耦合结构用在LC谐振结构时主要体现电容特性，使得谐振结构具有较低的谐振频率，具有低频带通，高频带阻的特性，可增强多频天线的辐射性能。
所述耦合结构10包括至少两层导体，相邻两层导体之间层叠设置，以在相邻两层导体上施加电压时，两层导体之间具有电势差而形成电容，即具有容性耦合关系。
所述至少两层导体可以通过介质板3支撑，当导体设有两层时，两层导体分设于介质板的正反两面；当导体设有三层或以上层数时，介质板为多层介质板，多层导体沿介质板厚度方向分层设置，并且其中两层导体分设在介质板最外面的两个表面。
所述导体也可通过介质支撑件与导体点接触的方式来支撑，位于上层的导体相对下层导体悬空设置。
由此，将导体分层层叠设置，使得相异两层导体之间形成耦合间隙，在施加电压后，相异两层导体之间可形成耦合关系。
以下以耦合结构10具有两层导体1、2为例说明本发明的耦合结构的具体结构及工作原理。
所述耦合结构包括两层导体1、2及介质板3，两层所述导体1、2分设于介质板3的正面与反面。每层导体包括多个导体带，所述多个导体带之间并排且具有间隙设置；相邻两层导体的导体带之间，上层导体带与下层导体带的相互投影至少部分重叠。
在一种具体实施方式中，每层导体的多个导体带工作于高电势与低电势两种具有电势差的电势，在导体带上施加电压，即导体带工作时，其中部分导体带呈高电势，另一部分导体带呈低电势，从而可形成由高电势指向低电势的电场，即在相同一层的导体带之间形成耦合关系。
在相邻两层的导体带之间，位于上层的多个导体带与位于下层的多个导体带一一对应正对并且投影相互重合设置，并且上层导体带与下层对应的一个导体带之间电势相反，从而在相异两层的每两个对应导体带之间形成由高电势指向低电势的电场。
请结合图3，在图3中，用+号表示高电势，用-表示低电势。在本实施例中，耦合结构具有四个导体带，每层具有两个导体带。导体带11和导体带12位于介质板3的正面，导体带21和导体带22位于介质板3的反面，并且同一面的两个导体带之间以间隙分隔开。
在相同一层的两个导体带中，对于介质板3正面的导体带11和导体带12，导体带11带正电荷而呈高电势，导体带12带负电荷而呈低电势；对于介质板反面的导体带21和导体带22，导体带21带正电荷而呈高电势，导体带22带负电荷而呈低电势，以使得相同一层的两个导体带由于携带不同电荷而导致电势相反，具有电势差，可形成由高电势导体带指向低电势导体带的电场。
而在相异两层的导体带之间，导体带11和导体带22正对且电势相反，导体带12和导体带21正对且电势相反，因而可在相异两层导体带之间形成由高电势导体带指向低电势导体带的电场。
从图中可以看出，以上示例的耦合结构中，电场由高电势的导体带指向低电势的导体带的路径包括位于介质板内部的路径和位于介质板表面的路径，使得导体带的正面和反面都可以携带电荷，相对于常规耦合结构可携带更多电荷，从而具有更大的耦合电容。
图4为本发明提供的耦合结构的等效电路图，示出了上述耦合结构的耦合量既有电容C1，又有C2，相对于常规耦合结构，增加C2这一耦合量。为了对比本发明耦合结构与常规耦合结构的耦合量大小，采用投影尺寸相同(同为20平方厘米)的上述耦合结构和常规耦合结构，并对其进行双端口S 21参数和单端口S 11参数仿真，形成图5和图6所示的耦合结构双端口S 21参数和单端口S 11参数的仿真图，另外，；根据相应等效电路，可计算出表1所示的参数值。
Figure PCTCN2021112250-appb-000001
Figure PCTCN2021112250-appb-000002
表1等效电路的参数值
从等效电路的参数值可以看出，在投影尺寸相同的情况下，常规面耦合结构的耦合量只具有电容C1，而本发明耦合结构的耦合量具有电容C1和电容C2，本发明的耦合结构的电容量高于常规耦合结构，具有更好的耦合效果，这一特性有助于改善耦合结构在高频应用时的导通特性。这一特性也可等价描述为：假如设计所需的电容值相同，新型耦合结构可以具有更小的尺寸，这一特性有利于实现器件的小型化。
当需要更大的耦合量时，可在每层上设置更多的导体带来实现。请结合图7，该实施例为上述实施例的延伸，每层导体具有四个导体带，以一层导体的四个导体带为例，其中两个导体带11、13工作于高电势，另外两个导体带12、14工作于低电势，并且四个导体带以具有电势差的方式交替排布，从而在相同一层的每两个相邻导体带之间形成耦合关系，可以实现更大的耦合量。
另外，工作于两种电势的导体带的数量可以相等也可不等，在一种实施方式中，工作于一种电势的导体带的数量多于工作于另一电势的导体带，以实现特定的耦合量。
请结合图8，图中阴影所示的导体带12、14、16、18工作于一种电势，空白的导体带11、13、15、17工作于另一电势。由图可以看出，两个相邻且工作于同一电势的导体带15、17之间可设置有两个工作于另一电势的导体带16、18，工作于一电势的导体带与相邻且电势相反(即存在电势差)的导体带之间形成指向电场，具有耦合关系。
另外，相同一层中的多个导体带可施加多个电压，使多个导体带之间的电势沿一个方向递增，形成渐变的电场，从而可在相邻两个导体带之间形成耦合关系，提高耦合量。
此外，上下两层的对应导体带的相互投影可不完全重合，具有电势差的导体带之间的投影至少部分重叠，也可实现耦合功能。
总而言之，所述耦合结构中，至少一个导体带在施加电压工作时与相 邻的导体带之间存在电势差，从而产生由电势高的导体带指向电势低的导体带的电场，形成容性耦合关系。相异两层的导体带之间，其中一层的至少一个导体带在工作时与位于另一层的至少一个导体带存在电势差，且在彼此的投影上存在重叠区域，也可形成由电势高的导体带到电势低的导体带的电场，形成容性耦合关系。
由此，本发明的所述耦合结构中，既在相异两层的导体带之间形成高电势到低电势的电场，也在相同一层的相邻导体带之间形成高电势到低电势的电场，相对于常规面耦合的结构而言，本发明的耦合结构为带耦合，具有更多的耦合路径，实现更大的耦合量，换言之，当实现相同耦合量时，本发明的耦合结构的尺寸更小。
请结合图2a、图2b和图7，可选地，所述耦合结构还包括两个导体段4，用于与外部传输线连接为耦合结构接入电压，所述导体段4具体包括第一导体段41和第二导体段42，所述第一导体段41和第二导体段42设于介质板3的其中一个表面并与所述导体带连接。
在图2a中，工作于高电势的导体带11、21连接于第二导体段42，工作于低电势的导体带12、22连接于第一导体段41。在图7中，工作于高电势的导体带11、13连接于第二导体段42，工作于低电势的导体带12、14连接于第一导体段41，导体带之间以具有电势差的方式交替设置。由此，在两个导体段上施加电压时，与第二导体段42连接的导体带均带正电荷，与第一导体段41连接的导体带均带负电荷，带有不同电荷的导体带之间具有电势差，形成耦合关系。
由上可知，导体带在介质板上分层设置，并且设有至少两层，而导体段设在介质板的表面(也即介质板表面的一层)，为了实现导体段对导体带的供能(即导体段向导体带提供所需电荷)，其中，与导体段位于相同一层的导体带与该导体段一体成型，而与该导体段不在相同一层的导体带则通过金属化过孔与导体段连接，由此，可通过两个导体段来对导体带进行供能，并使每层导体都具有工作于高电势和低电势两种不同工作电势的导体带，使耦合结构的电路布局更为简洁。
较佳地，所述第一导体段与第二导体段分设于导体带的两端，以在其 应用于电路时将电路的输入和输出设在导体带的两端，方便线路设计。
以上示例的耦合结构中，容性耦合关系在两层导体之间形成，通过增加电场的指向路径，提高了耦合量，在实现相同耦合量时，相对于宽微带线的耦合结构，缩小了尺寸；相对于多层PCB的耦合结构，仅使用单层电路板即可达到耦合量目标，降低成本。
作为延伸地，所述耦合结构具有多层导体，多层导体沿介质板厚度方向层叠设置。每层导体的设置及相异两层导体的关系与上述实施方式相同，在此不作赘述。由此，可在相邻的每两层导体的导体带之间形成耦合关系，从而可以实现更大的耦合量。
每层导体的所述多个导体带可由平面导体切割而成，其中相邻导体之间具有间隙，并且沿导体层叠的方向上，导体带的投影面积之和大于导体带之间的间隙的投影面积之和。可选地，在相同一层导体上，导体带的宽度之和大于导体带之间的间隙的宽度之和，使得去除的导体的面积小于新增的可携带电荷的面积，从而相对常规耦合结构可实现更大的耦合量。
请结合图9至图12，作为第二方面，本发明涉及一种谐振结构，为上述耦合结构的一种实际应用，其可应用于天线振子用以辐射信号。所述谐振结构具体表现为上述耦合结构10与电感20串联(或并联)，形成LC串联谐振结构(或LC并联谐振结构)，具有在谐振频率导通、在偏离谐振频率呈现高阻抗的特性，在其用于辐射臂后将使辐射臂具有带通型的滤波特性，同时还将使辐射臂的尺寸得到进一步减小。
参见图9，在一种实施方式中，所述电感为折线型电感，具体为设置在介质板上且具有电感特性的折线型导体，其与所述耦合结构中的一个导体段连接，实现折线型电感与耦合结构的串联。
参见图10，在另一种实施方式中，所述电感为环绕型电感，具体为设置在介质板上且具有电感特性的环绕型导体，其与所述耦合结构中的一个导体段连接，实现环绕型电感与耦合结构的串联。
为说明本发明的耦合结构可使辐射臂尺寸减小的特性，以下对三种直线型对称振子进行对比，如图11所示，设置三个计算模型diople_1、dipole_2和dipole_3的长度相同，其中，diople_1为常规的对称振子、 dipole_2为加载了环绕型电感的对称振子、dipole_3为加载了由本发明的耦合结构和环绕型电感组成的LC串联谐振电路的对称振子，并限定三种振子所使用的介质板3的参数相同，用仿真软件计算得到的回波损耗如图12所示。从图12可以看出，使用了由本发明的耦合结构加环绕型电感的对称振子的谐振频率最低，这也意味着假如设计谐振频率相同的对称振子，dipole_3的结构可以具有最小的尺寸。
请结合图13至图15，作为第三方面，本发明涉及一种低频辐射单元，包括辐射面及用于支撑辐射面并为之馈电的馈电巴伦5，其中，辐射面包括呈十字排布的四个辐射臂，所述辐射臂优选为环形辐射臂，其由上述谐振结构连接形成。
其中，图13所示的低频辐射单元中，单个耦合结构具有四个导体带；图15所示的低频辐射单元中，单个耦合结构具有八个导体带，相对于四个导体带的耦合结构，可实现更大的耦合量。
通过采用上述谐振结构作为低频辐射单元辐射臂的构成元素，相对于采用常规谐振结构的辐射臂，谐振频率更低，因而可以缩小辐射臂的尺寸，有利于天线的小型化。
请结合图20，作为第四方面，本发明还涉及一种天线1000，其包括上述低频辐射单元100、高频辐射单元200和电磁边界300，其中，高频辐射单元设于相邻两个低频辐射单元之间，和/或，高频辐射单元设于低频辐射单元的相邻两个辐射臂之间，电磁边界300围设于低频辐射单元100四周并用于减小辐射单元之间的干扰，增强天线的辐射性能。
通过采用上述谐振结构作为低频辐射单元辐射臂的构成元素，相对于采用常规谐振结构的辐射臂，谐振频率更低，因而可以缩小辐射臂的尺寸，有利于天线的小型化。
另外，当电磁边界的带通特性被配置为与低频辐射单元100相同，在高频辐射单元的频段呈现高阻特性时，可改善低频辐射单元的性能，同时减弱对高频辐射单元的影响。
另外，本发明的耦合结构也可应用于电磁边界中，因此，请结合图16至图19，作为第五方面，本发明还提供应用上述谐振结构的电磁边界， 其由多个上述谐振结构连接而成，用于设置在辐射单元之间以减小辐射单元之间的干扰，增强天线的辐射性能。
图16示出的电磁边界中，所述耦合结构具有介质板，其中导体带的长度方向平行于介质板的长度方向；图17示出的电磁边界中，所述耦合结构具有介质板，其中导体带的长度方向垂直于介质板的长度方向。换言之，本发明的电磁边界，可由技术人员根据实际需要来设置导体带的延伸方向，以合理利用介质板的空间和方便线路设计。
由于本发明的耦合结构的等效电路中的电感量较小(远小于折线型电感的电感值)，实际应用时主要呈现电容特性，和折线型电感连接后的等效电路如图18所示，本发明的电磁边界可视为由多个谐振结构级联而成。该电路的频率响应特性如图19所示，该电磁边界呈现出的带通特性使得新型的电磁边界可用于多频天线中改善特定频段的辐射单元指标。
以上描述仅为本发明的较佳实施例以及对所运用技术原理的说明。本领域技术人员应当理解，本发明中所涉及的发明范围，并不限于上述技术特征的特定组合而成的技术方案，同时也应涵盖在不脱离上述发明构思的情况下，由上述技术特征或其等同特征进行任意组合而形成的其它技术方案。例如上述特征与本发明中发明的(但不限于)具有类似功能的技术特征进行互相替换而形成的技术方案。
尽管已经采用特定于结构特征和/或方法逻辑动作的语言描述了本主题，但是应当理解所附权利要求书中所限定的主题未必局限于上面描述的特定特征或动作。相反，上面所描述的特定特征和动作仅仅是实现权利要求书的示例形式。

Claims (19)

  1. 一种耦合结构，包括至少两层具有容性耦合关系的导体，其特征在于，每层导体均包括多个并排且具有间隙的导体带，相同一层的多个导体带中，至少一个导体带在工作时与相邻导体带存在电势差，相异两层的导体带之间，其中一层的至少一个导体带与另一层的至少一个导体带存在电势差，且在彼此相互投影方向上至少部分重叠。
  2. 根据权利要求1所述的耦合结构，其特征在于，每层导体的导体带均工作于高电势和低电势两种相对电势，部分导体带工作于高电势，与其具有耦合关系的另一部分导体带工作于低电势。
  3. 根据权利要求2所述的耦合结构，其特征在于，工作于高电势的导体带连接于一导体段，工作于低电势的导体带连接于另一导体段。
  4. 根据权利要求3所述的耦合结构，其特征在于，还包括介质板，各层导体沿介质板厚度方向层叠设置，各个所述导体段设于介质板的表面，导体段与位于其相同层且工作于同种电势的导体带一体成型，与位于其相异层且工作于同种电势的导体带通过金属化过孔电连接。
  5. 根据权利要求3所述的耦合结构，其特征在于，两个所述导体段分设于导体带的两端。
  6. 根据权利要求2所述的耦合结构，其特征在于，相同一层的多个导体带中，相邻的每两个导体带之间分别工作于不同种电势而存在电势差。
  7. 根据权利要求2所述的耦合结构，其特征在于，相同一层的导体带中，至少两个工作于一种电势的导体带之间设置有两个工作于另一电势的导体带。
  8. 根据权利要求2所述的耦合结构，其特征在于，工作于高电势的导体带的数量与工作于低电势的导体带的数量相同或不同。
  9. 根据权利要求1所述的耦合结构，其特征在于，沿各层导体带的层叠方向上，导体带的投影面积之和大于导体带之间的间隙的投影面积之和。
  10. 根据权利要求9所述的耦合结构，其特征在于，在相同一层导体上，导体带的宽度之和大于导体带之间的间隙的宽度之和。
  11. 一种谐振结构，包括电容和电感，所述电容与电感串联或并联，其特征在于，所述电容由权利要求1至10任一项所述的耦合结构构成。
  12. 根据权利要求11所述的谐振结构，其特征在于，所述电感包括设于介质基板上的折线型导体或环绕型导体。
  13. 一种低频辐射单元，包括辐射臂，其特征在于，所述辐射臂包括权利要求11或12所述的谐振结构。
  14. 根据权利要求13所述的低频辐射单元，其特征在于，所述辐射臂为多个所述谐振结构连接形成的环形辐射臂。
  15. 一种天线，包括低频辐射单元，其特征在于，所述低频辐射单元为权利要求13或14所述的低频辐射单元。
  16. 根据权利要求15所述的天线，其特征在于，还包括高频辐射单元，所述高频辐射单元设于相邻两个所述低频辐射单元之间，和/或，高频辐射单元设于所述低频辐射单元相邻两个辐射臂之间。
  17. 根据权利要求16所述的天线，其特征在于，还包括电磁边界，所述电磁边界围设于低频辐射单元的四周。
  18. 根据权利要求17所述的天线，其特征在于，所述电磁边界由多个所述谐振结构连接构成。
  19. 一种电磁边界，用于设置在辐射单元之间用以避免辐射单元之间的干扰，其特征在于，所述电磁边界包括权利要求11或12所述的谐振结构。
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