WO2022140980A1 - 封装芯片及芯片的封装方法 - Google Patents

封装芯片及芯片的封装方法 Download PDF

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Publication number
WO2022140980A1
WO2022140980A1 PCT/CN2020/140376 CN2020140376W WO2022140980A1 WO 2022140980 A1 WO2022140980 A1 WO 2022140980A1 CN 2020140376 W CN2020140376 W CN 2020140376W WO 2022140980 A1 WO2022140980 A1 WO 2022140980A1
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WIPO (PCT)
Prior art keywords
substrate
heat dissipation
chip
adhesive layer
adhesive
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Application number
PCT/CN2020/140376
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English (en)
French (fr)
Inventor
吴维哲
任亦纬
赵南
郑见涛
蒋尚轩
江宇
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2020/140376 priority Critical patent/WO2022140980A1/zh
Priority to CN202080108213.XA priority patent/CN116670807A/zh
Publication of WO2022140980A1 publication Critical patent/WO2022140980A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings

Definitions

  • the embodiments of the present application relate to the technical field of electronic packaging, and in particular, to a packaging method for packaging chips and chips.
  • chips are widely used in the fields of high-speed data communication and artificial intelligence.
  • the integration degree of chips is gradually improved, and the size of packaged chips is also increasing.
  • the packaged chip includes a substrate 10 and a chip 20 disposed on the substrate. As the size of the packaged chip increases, the thermal expansion coefficient mismatch between the chip 20 and the substrate 10 is serious, and the substrate 10 is prone to occur. warping.
  • the packaged chip further includes: a heat dissipation cover (Lid) 30 (or a reinforcement ring (Ring)), wherein the heat dissipation cover 30 (or the reinforcement ring) can balance the warpage of the packaged chip.
  • insulating glue (Adheisve, Ad) 70 may be used to connect the heat dissipation cover 30 and the substrate 10 .
  • the thickness of the insulating adhesive is difficult to control.
  • the insulating adhesive is too thick, the deformation coupling between the heat dissipation cover and the substrate is small, and the warpage of the package becomes larger, which seriously affects the soldering yield.
  • the insulating glue is thin, the deformation of the heat dissipation cover and the substrate is greatly coupled, and the deformation of the heat dissipation cover is more easily transmitted to the packaged chip, resulting in increased internal stress of the package and affecting the reliability of the package.
  • the embodiments of the present application provide a packaged chip and a chip packaging method, so as to better control the thickness of the adhesive layer and improve the welding yield and packaging reliability.
  • a first aspect of the embodiments of the present application provides a packaged chip, including: a substrate, a chip, and a heat dissipation structure; the heat sink is disposed on the substrate, and the heat dissipation structure and the substrate enclose a first space, where the chip is accommodated In the first space; the first surface of the heat dissipation structure and the second surface of the substrate are connected by an adhesive layer, the adhesive layer includes: an adhesive material, and a plurality of supporting structures arranged at intervals, the supporting structures abut against the on the first surface and the second surface.
  • the thickness of the adhesive layer can be controlled by laminating the adhesive to the thickness of the support structure through the heat dissipation structure.
  • the height of the support structure can be adjusted, so that the thickness of the adhesive layer between the heat dissipation structure and the substrate is moderate, so as to ensure the reliability of the package stress while taking into account the warpage control, and improve the package reliability.
  • the support structure includes: a spaced columnar structure formed between the first surface and the second surface, two ends of the columnar structure abut against the first surface and the second surface respectively. on the two surfaces; the glue material is filled between the plurality of columnar structures, wherein the columnar structures are formed by curing the glue material. Therefore, the support structure has a certain hardness and can play a supporting role, and the adhesive material also has a certain fluidity and viscosity, which can fill the gap between the heat dissipation structure and the substrate under the extrusion of the heat dissipation structure, and play a role in adhesion. Effect.
  • the solidified shape of the support structure is spherical, cubic or cylindrical.
  • the support structure includes: a filler mixed in the glue material, the filler abuts on the first surface and the second surface.
  • the filler adopts one or more of resin, rubber, plastic, fiber or polymer-based composite materials.
  • the shape of the filler is cylindrical, square, trapezoidal or spherical.
  • the thickness of the support structure is 30-300um.
  • the supporting structure and the adhesive material of the adhesive material include one or more of an underfill, an insulating adhesive, an encapsulant, or a filler.
  • heat dissipation glue is provided between the heat dissipation structure and the chip.
  • the heat dissipation structure includes: an annular bracket and a cover plate, the annular bracket is arranged on the base plate, the cover plate is supported on the base plate by the annular bracket, the annular bracket, the cover plate and The substrate encloses the first space.
  • the annular support and the cover plate are integrally formed.
  • the chip is connected to the substrate through solder balls.
  • primer is provided in the gaps of the solder balls.
  • a chip packaging method including: fixing a chip on a second surface of a substrate; dispensing an adhesive layer on the second surface of the substrate, wherein the adhesive layer includes: an adhesive material , and a plurality of supporting structures arranged at intervals; the first surface of the heat dissipation structure is connected with the adhesive layer, and the adhesive layer is cured.
  • dispensing an adhesive layer on the second surface of the substrate includes: dispensing adhesive material mixed with fillers at multiple positions on the second surface of the substrate; wherein, after the adhesive layer is cured, The filler rests on the first surface and the second surface.
  • the dispensing an adhesive layer on the second surface of the substrate includes: forming a support structure at multiple positions on the second surface of the substrate; curing the supporting structure; wherein, curing the adhesive layer Then, the two ends of the support structure abut on the first surface and the second surface respectively; the filling glue material is applied on the second surface of the substrate, so that the filling glue material fills the gap of the support structure middle.
  • 1 is a schematic structural diagram of a packaged chip
  • FIG. 2 is a top view of a packaged chip
  • FIG. 3 is a schematic structural diagram of a packaged chip provided by an embodiment of the present application.
  • 3a is a top view of a packaged chip provided by an embodiment of the application.
  • 3b is a top view of another packaged chip provided by an embodiment of the application.
  • FIG. 3c is a top view of another packaged chip provided by an embodiment of the present application.
  • 4a is a top view of a packaged chip provided by an embodiment of the present application.
  • FIG. 4b is a top view of another packaged chip provided by an embodiment of the present application.
  • FIG. 5 is a flowchart of a chip packaging method provided by an embodiment of the present application.
  • Fig. 6a, Fig. 6b, Fig. 6c, Fig. 6d are respectively the structural schematic diagrams respectively obtained by executing each step shown in Fig. 5;
  • FIG. 6e is a use state diagram of the packaged chip provided by the embodiment of the present application.
  • FIG. 7 is a flowchart of another chip packaging method provided by an embodiment of the present application.
  • Fig. 8a, Fig. 8b are respectively the structural schematic diagrams obtained by executing each step shown in Fig. 7;
  • FIG. 9 is a flowchart of another chip packaging method provided by an embodiment of the present application.
  • FIG. 10 is a schematic structural diagram obtained by executing each step shown in FIG. 9;
  • FIG. 11 is a flowchart of another chip packaging method provided by an embodiment of the present application.
  • FIG. 12a and FIG. 12b are schematic structural diagrams obtained by performing the steps shown in FIG. 11 respectively.
  • orientation terms such as “upper” and “lower” are defined relative to the orientation in which the components in the drawings are schematically placed. It should be understood that these directional terms are relative concepts, and they are used for relative In the description and clarification of the drawings, it may change correspondingly according to the change of the orientation in which the components are placed in the drawings.
  • FIG. 3 is a cross-sectional view of a packaged chip provided by an embodiment of the present application.
  • the packaged chip adopts, for example, a package format of a flip chip ball grid array (Flip Chip Ball Grid Array, FC-BGA).
  • the packaged chip includes: a substrate 10 , a chip 20 , and a heat dissipation structure 30 .
  • the chip 20 is located on one surface of the substrate 10 and is electrically connected to the substrate 10 .
  • the heat dissipation structure 30 and the first surface of the substrate 10 form a sealed space, and the chip 20 is located in the sealed space.
  • the heat dissipation structure 30 can be used to protect the chip 20 and also be used for Dissipate heat for the chip 20 .
  • the packaged chip may be disposed on a circuit board. Referring to FIG. 6e , wherein the substrate 10 and the circuit board 001 respectively include opposite first and second surfaces, and the second surface of the substrate 10 is opposite to the first surface of the circuit board 001 .
  • the substrate 10 When the substrate 10 is specifically arranged, the substrate 10 is, for example, located on the first surface of the circuit board 001, and the substrate 10 is fixedly connected to the circuit board 001 by, for example, solder balls (or bumps). It should be understood that, as shown in FIG. 6e The welding between the substrate 10 and the circuit board 001 shown is only a specific implementation manner, and other connection manners may also be used for connection in the embodiments of the present application.
  • the substrate 10 can be made of different materials such as silicon, ceramic, organic substrate 10 and the like.
  • the chip 20 may be, for example, a bare chip, or may be a package structure in which the bare chip is packaged.
  • the chip 20 is, for example, located on the first surface of the substrate 10 .
  • the chip 20 includes opposite first and second surfaces, and side surfaces connecting the first and second surfaces.
  • the second surface of the chip 20 is opposite to the first surface of the substrate 10.
  • solder balls 50 can be used for connection, or jumpers can be used for connection, no matter which one is used. way, it only needs to be able to realize the electrical connection.
  • a filler material 60 may also be injected into the gaps of the solder balls 50 .
  • the material of the filling material 60 may specifically be: one or more of silica gel, polyolefin resin, epoxy resin, modified epoxy resin, silicone resin and modified silicone resin.
  • the chip 20 generates heat during use.
  • a heat dissipation structure 30 is also provided on the chip 20 .
  • the heat dissipation structure 30 When specifically disposing the heat dissipation structure 30 , the heat dissipation structure 30 includes, for example, a bracket 301 disposed on the first surface of the substrate 10 , and a cover plate 302 covered on the bracket 301 .
  • the bracket 301 can be integrally formed with the cover plate 302 .
  • the bracket 301 and the cover plate 302 may be two independent components that are fixedly connected together.
  • the specific fixed connection method can be welded, bonded, snap-fit connection, or connected by connecting pieces (such as bolts or screws).
  • the bracket 301 and the cover plate 302 can be made of metal materials (eg, copper, aluminum or an alloy of the two).
  • the bracket 301 and the cover plate 302 are used to dissipate heat for the chip 20 .
  • the cross-section of the heat dissipation structure 30 in the present application is in the shape of a rectangle.
  • the heat dissipation structure 30 is not limited to having a rectangular cross-section, and the cross-section may also be circular, trapezoidal or other shapes.
  • the shape of the heat dissipation structure 30 is consistent with the shape of the substrate 10 .
  • the substrate 10 for carrying the chip 20 also becomes larger, and the size of the heat dissipation structure 30 adapts to become larger, which makes it difficult to solder the substrate 10 to the circuit board.
  • the substrate 10 When the substrate 10 is mounted on the substrate 001, the substrate 10 expands and deforms due to heat.
  • the heat dissipation structure 30 has a relatively strong strength, so the substrate can be pressed tightly to avoid the substrate from being deformed.
  • an insulating glue 70 Adheisve, Ad
  • Ad Ad
  • the thickness of the insulating adhesive is difficult to control.
  • the insulating adhesive is too thick, the degree of coupling between the heat dissipation cover and the substrate deformation is small, and the warpage of the package becomes larger, which seriously affects the yield of soldering.
  • the insulating adhesive is thin, the deformation of the heat dissipation cover and the substrate is greatly coupled, and the deformation of the heat dissipation cover is more easily transmitted to the packaged chip, resulting in aggravation of the internal stress of the package and affecting the reliability of the package.
  • an embodiment of the present application provides a packaged chip with a controllable adhesive layer thickness.
  • Adhesive layer 100 includes:
  • Support structure 101 and glue material 102 are provided.
  • the support structure 102 and the adhesive material 102 are distributed between the heat dissipation structure 30 and the substrate 10 at intervals.
  • the support structure 101 and the adhesive material 102 are respectively formed by the adhesive layer 100 through two process steps, so that when the heat dissipation structure 30 is mounted on the substrate 10 , the adhesive layer 100 can provide adhesive properties on the one hand. On the one hand, it can provide support for the heat dissipation structure 30 and adjust the thickness of the entire adhesive layer 100 .
  • the support structure 101 may be formed on the substrate 10 first. After the support structure 101 is cured and formed, the glue material 102 is then applied. After dispensing the adhesive material 102, the heat dissipation structure 30 can be mounted on the substrate 10 immediately. At this time, the support structure 101 already has a certain hardness and can play a supporting role, and the adhesive material 102 also has a certain fluidity and viscosity. Under the extrusion of the heat dissipation structure 30 , the gap between the heat dissipation structure 30 and the substrate 10 is filled, and the effect of adhesion is achieved. In order to achieve this purpose, the glue material 102 should be formed in a large amount.
  • the support structure 101 may be a structural member formed at intervals after the adhesive material is cured on the substrate 10 .
  • the glue material 102 is formed between the support structures 10 .
  • the support structure 101 may be cylindrical, square or trapezoidal, and the like.
  • the shape of the support structure 101 may also be spherical.
  • the thickness of the entire adhesive layer 100 can be accurately controlled by adjusting the height of the support structure 101 during molding, so as to avoid the thickness of the adhesive layer being too large or too small.
  • the height of the support structure 101 during molding can be adjusted by controlling the amount of glue material, so that the height of the support structure formed by the support structure 101 satisfies a preset value.
  • the amount of glue material can be obtained through multiple tests, and can also be calculated according to the deformation coupling performance of the heat dissipation structure 30 and the substrate 10, and these all belong to the protection scope of the present application.
  • the thickness of the adhesive layer 100 is, for example, 30-300um.
  • the degree of deformation coupling between the heat dissipation structure 30 and the substrate 10 is moderate, and the heat dissipation structure 30 and the substrate 10 generate heat due to the difference in the coefficient of thermal expansion (CTE).
  • CTE coefficient of thermal expansion
  • the embodiments of the present application do not limit the materials of the support structure 101 and the adhesive material 102, and the two may use the same material or different materials.
  • Materials of the support structure 101 and the adhesive material 102 include but are not limited to adhesive materials such as insulating adhesive (Adhesive), underfill adhesive (Underfill), encapsulating adhesive (Dam), and filling adhesive (fill).
  • the insulating adhesive is a composite adhesive with good electrical insulating properties.
  • Underfill is an epoxy-based underfill that flows by capillary action. After the filler is cured, it can improve the mechanical strength of the connection.
  • the embodiments of the present application do not limit the number and distribution of the support structures 101 .
  • the support structures 101 can be distributed around or at the edge of the bonding surface of the substrate 10 and the heat dissipation structure 30 , so as to provide stable adhesion and support effects.
  • the substrate 10 is provided with 8 support structures with circular cross-sections, wherein the surface of the substrate 10 is rectangular, and each of the four vertices of the substrate 10 is provided with There is a support structure, and at the same time, a support structure is also provided at the middle position of each side of the substrate 10, and a rectangular glue material 102 is provided between the adjacent support structures.
  • the substrate 10 is provided with four support structures 101 with a circular cross section, wherein the surface of the substrate 10 is rectangular, and the support structures 101 are respectively arranged on the substrate 10 The four vertex positions of .
  • Two rectangular adhesive materials 102 are provided on each side of the substrate 10 .
  • the substrate 10 is provided with four supporting structures 101 with a circular cross section, wherein the surface of the substrate 10 is rectangular, and the supporting structures 101 are respectively arranged on each side of the substrate 10 . the middle of the edge. Two rectangular adhesive materials 102 are provided on each side of the substrate 10 .
  • the present invention further provides another adhesive layer 100 .
  • the adhesive layer 100 includes a filler 1011 and an adhesive material 102 mixed in the adhesive material 102, the filler can be used as a support structure, and the filler 1011 abuts against the first surface and the on the second surface.
  • the support structure 101 and the adhesive material 102 are respectively formed by the adhesive layer 100 through one process step, so that when the heat dissipation structure 30 is mounted on the substrate 10 , the adhesive layer 100 can provide adhesion on the one hand.
  • the fixed effect can, on the one hand, provide support for the heat dissipation structure 30 and adjust the thickness of the entire adhesive layer 100 .
  • the glue material 102 mixed with the filler 1011 may be dispensed on the substrate 10 , and then the heat dissipation structure 30 may be mounted on the substrate 10 .
  • the filler 1011 in the adhesive material 102 has a certain hardness and can play a supporting role, while the adhesive material 102 has a certain fluidity and viscosity and can fill the space between the heat dissipation structure 30 and the substrate 10 under the extrusion of the heat dissipation structure 30 . gaps between them, and play a role in adhesion.
  • the support structure may be the filler 1011 mixed in the glue material 102 .
  • the filler can be hard particles made of one or more of silica, resin, rubber, plastic, fiber or polymer matrix composite materials.
  • the shape of the packing can be cylindrical, square, trapezoidal or spherical.
  • the thickness of the entire adhesive layer 100 can be accurately controlled by adjusting the size of the filler to avoid the thickness of the adhesive layer being too large or too small.
  • the size of the filler can be obtained through multiple tests or calculated according to the deformation coupling performance of the heat dissipation structure 30 and the substrate 10 , which all belong to the protection scope of the present application.
  • the thickness of the adhesive layer 100 is, for example, 30-300um.
  • the degree of deformation coupling between the heat dissipation structure 30 and the substrate 10 is moderate, and the heat dissipation structure 30 and the substrate 10 generate heat due to the difference in the coefficient of thermal expansion (CTE).
  • CTE coefficient of thermal expansion
  • the present invention further provides another adhesive layer 100 .
  • the adhesive layer 100 includes: a first coating layer 11 and a second coating layer 12, and the first coating layer 11 is a mixture composed of adhesive material and filler.
  • the first coating layer includes a first glue material 1021 and a filler 1011 mixed in the first glue material 1021 .
  • the second coating layer 12 includes: a second glue material.
  • the adhesive layer 100 is formed through two process steps to form the first coating layer 11 and the second coating layer 12 respectively, so that when the heat dissipation structure 30 is mounted on the substrate 10, the adhesive layer 100 on the one hand It can provide the effect of bonding and fixing, and on the one hand, it can provide support for the heat dissipation structure 30 and adjust the thickness of the entire adhesive layer 100 .
  • the heat dissipation structure 30 may be mounted on the substrate 10 immediately.
  • the filler 1011 in the first coating layer 11 has a certain hardness and can play a supporting role, while the first glue material 1021 in the first coating layer 11 and the second glue material in the second coating layer 12 have a certain hardness Liquidity and stickiness.
  • the gap between the heat dissipation structure 30 and the substrate 10 can be filled, and the effect of adhesion can be achieved.
  • the second coating layer 12 should be formed in a large amount.
  • the first coating layer 11 should be formed in a small amount.
  • the filler 1011 can be used to support the heat dissipation structure 10 .
  • the support structure 101 and the glue material 102 may be applied out of sequence. for example:
  • the first coating 11 may be formed first, and then the second coating 12 may be formed:
  • a first coating layer 11 is formed on a plurality of positions on the first surface of the substrate 10 , and then a second coating layer 12 is formed on the first surface of the substrate 10 , wherein the first coating layer 11 and The second coating layers 12 are arranged at intervals.
  • the second coating layer 12 may be formed first, and then the first coating layer 11 may be formed:
  • the second coating layer 12 is formed on a plurality of positions on the first surface of the substrate 10, and then the first coating layer 11 is formed on the first surface of the substrate 10; wherein, the first coating layer 11 and The second coating layers 12 are arranged at intervals, which all belong to the protection scope of the present application.
  • the support structure may be the filler 1011 mixed in the first glue material 1021 .
  • the filler can be hard particles made of one or more of silica, resin, rubber, plastic, fiber or polymer matrix composite materials.
  • the shape of the packing can be cylindrical, square, trapezoidal or spherical.
  • the thickness of the entire adhesive layer 100 can be accurately controlled by adjusting the size of the first filler, so as to avoid the thickness of the adhesive layer being too large or too small.
  • the material and shape of the filler 1011 are not limited in the embodiments of the present application.
  • the material and shape of the filler 1011 may be the same as those of the filler in the previous embodiments.
  • the embodiments of the present application do not limit the materials of the first glue material 1021 and the second glue material, and the materials of the first glue material 1021 and the second glue material may be the same as those of the supports in the foregoing embodiments.
  • the structure and the glue material in the glue are the same.
  • first glue material 1021 and the second glue material can be made of the same material or different.
  • the adhesive layer 100 can have a certain supporting effect.
  • the thickness of the entire adhesive layer 100 can be accurately controlled by adjusting the size of the filler, so as to avoid excessively large or too small thickness of the adhesive layer, ensure the reliability of the package stress while taking into account the warpage index, and ensure the welding yield of the surface assembly technology.
  • the first coating 11 is dot-coated at 8 positions on the substrate 10 , wherein the surface of the substrate 10 is rectangular, and the four vertices of the substrate 10 are dot-coated with the first coating 11 .
  • the first coating layer 11 is also dot-coated at the middle position of each side of the substrate 10 , and the rectangular second coating layer 12 is dot-coated between the adjacent first coating layers 11 .
  • the first coating layer 11 is dot-coated at four positions on the substrate 10 , wherein the surface of the substrate 10 is rectangular, and the first coating layer 11 is dot-coated at four vertices of the substrate 10 .
  • Two rectangular second coatings 12 are dot-coated on each side of the substrate 10 .
  • the first coating layer 11 is dot-coated at four positions on the substrate 10, wherein the surface of the substrate 10 is rectangular, and the first coating layer 11 is dot-coated at the middle position of each side of the substrate 10. .
  • Two rectangular second coatings 12 are provided on each side of the substrate 10 .
  • heat dissipation glue 40 may be disposed between the chip 20 and the heat dissipation structure 30 to connect the chip 20 and the heat dissipation structure 30 to improve the stability of the packaged chip.
  • the heat dissipation glue can also effectively conduct the heat generated by the chip 20 to the outside.
  • disposing the heat dissipation glue 40 between the chip 20 and the heat dissipation structure 30 can reduce the contact thermal resistance between the chip 20 and the heat dissipation structure 30 .
  • the air gap can be filled by using the heat dissipation glue 40, so that the contact thermal resistance can be reduced and the heat dissipation performance can be improved.
  • the heat dissipation glue 40 includes, for example, an opposite first surface and a second surface.
  • the first surface of the heat dissipation glue 40 is adjacent to the heat dissipation structure 30
  • the second surface of the heat dissipation glue 40 is adjacent to the first surface of the chip 20 .
  • the heat dissipation glue 40 is arranged between the heat dissipation structure 30 and the chip 20, so that the heat dissipation structure 30 can fully contact the chip 20, so that the heat generated when the chip 20 is working is conducted to the external environment in time. .
  • the heat dissipation adhesive 40 can be, for example, a thermal interface material (Thermal Interface Materials, TIM) capable of conducting electricity, such as a low melting point metal such as indium, or an insulating thermal interface material, such as silica gel or polyolefin resin.
  • a thermal interface material such as a low melting point metal such as indium
  • an insulating thermal interface material such as silica gel or polyolefin resin.
  • the heat dissipation glue 40 When disposing the heat dissipation glue 40, if the heat dissipation glue 40 is made of indium, for example, the heat dissipation glue 40 can be placed on the first surface of the chip 20, and then the heat dissipation structure 30 can be fixed on the heat dissipation glue 40, and then the whole package structure is heated, so that The heat dissipation glue 40 is melted to fill the air gap between the chip 20 and the heat dissipation structure 30 .
  • the heat dissipation glue 40 is made of indium, for example, the heat dissipation glue 40 can be placed on the first surface of the chip 20, and then the heat dissipation structure 30 can be fixed on the heat dissipation glue 40, and then the whole package structure is heated, so that The heat dissipation glue 40 is melted to fill the air gap between the chip 20 and the heat dissipation structure 30 .
  • the embodiment of the present application also provides a chip packaging method, as shown in Figure 5, the chip packaging method comprises the following steps:
  • the chip is fixed on the second surface of the substrate 10 .
  • Fixing the chip 20 on the first surface of the substrate 10 includes: as shown in FIG. 6 a , arranging solder balls 50 on the first surface of the chip 20 , and connecting the solder balls 50 to the first surface of the substrate 10 by reflow soldering Surface connections, and as shown in Figure 6b, fill material 60 is injected into the gaps of solder balls 50.
  • the adhesive layer 100 is dispensed on the second surface of the substrate 10 , and the heat dissipation adhesive 40 is applied on the surface of the chip 20 away from the substrate 10 at the same time.
  • the adhesive layer 100 includes: a supporting structure 101 and an adhesive material 102 , the supporting structure 101 is used to support the heat dissipation structure 30 , and the adhesive material 102 is used to fill the gap of the supporting structure 101 .
  • the support structure 101 is used to support the heat dissipation structure 30 , and the heat dissipation structure 30 includes a sealed annular bracket.
  • the support structure 101 can be applied at multiple positions on the edge of the substrate 10 to form the support structure.
  • the adhesive layer 100 may also be disposed on the first end of the heat dissipation structure 30 , and then the adhesive layer 100 is attached to the first surface of the substrate 10 along with the heat dissipation structure 30 .
  • the adhesive layer 100 can be pressed to a specific height through dual control of pressure and temperature, and then cured and shaped to achieve a desired adhesive layer thickness.
  • the first surface of the heat dissipation adhesive 40 can be connected to the second surface of the chip 20
  • the second surface of the heat dissipation adhesive 40 can be connected to the heat dissipation structure 30 .
  • FIG. 6e shows a use state diagram of the packaged chip. As shown in FIG. 6e, after the chip 20 is packaged, the chip 20 can also be connected to the circuit board 001. As shown in FIG. 6e, after the chip 20 is packaged, the chip 20 can also be connected to the circuit board 001. As shown in FIG. 6e, after the chip 20 is packaged, the chip 20 can also be connected to the circuit board 001. As shown in FIG. 6e, after the chip 20 is packaged, the chip 20 can also be connected to the circuit board 001. As shown in FIG.
  • solder balls may be disposed on the second surface of the substrate 10 , and the solder balls may be connected to the first surface of the circuit board 001 by means of reflow soldering.
  • the packaged chip 1 is disposed on a circuit board 001 during use, for example, the circuit board 001 is used to carry the packaged chip, and the packaged chip 1 is fixed on the circuit board 001 and is electrically connected to the circuit board 001 .
  • the circuit board 001 may be a common printed circuit board 001 .
  • the dispensing layer 100 on the second surface of the substrate 10 includes:
  • the size of the support structure 101 can be adjusted by controlling the amount of glue material.
  • the amount of glue applied to each position can be the same, so that the size of the support structure 101 at each position is the same.
  • the support structure can be formed after the support structure 101 is cured.
  • the material of the adhesive layer 100 and the adhesive material 102 are the same or different.
  • the adhesive material 102 is spaced apart from the support structure 101 , and the adhesive material 102 is used to fill the gap of the support structure 101 .
  • the glue material 102 can be made of the same material as the support structure 101 . In other embodiments, the support structure 101 can be made of a different material from the glue material 102.
  • the thickness of the support structure 101 can be used as a reference, and the thickness of the adhesive material 102 is equal to the thickness of the support structure 101 .
  • the dispensing layer 100 on the first surface of the substrate 10 includes:
  • the glue material 102 mixed with the filler 1011 is applied on a plurality of positions on the first surface of the substrate 10 .
  • the filler mixed in the glue material can be used as a support structure, and after the glue layer 100 is cured, the filler abuts on the first surface and the second surface.
  • the filler has a certain hardness and can play a supporting role, and the adhesive material 102 has a certain fluidity and viscosity, and can fill the gap between the heat dissipation structure 30 and the substrate 10 under the extrusion of the heat dissipation structure 30 . have a sticking effect.
  • the filler can be hard particles made of one or more of silica, resin, rubber, plastic, fiber or polymer matrix composite materials.
  • the shape of the packing can be cylindrical, square, trapezoidal or spherical.
  • the thickness of the entire adhesive layer 100 can be accurately controlled by adjusting the size of the filler, so as to avoid the thickness of the adhesive layer being too large or too small.
  • the dispensing layer 100 on the second surface of the substrate 10 includes:
  • the first coating layer 11 is a mixture composed of glue material and filler. As shown in FIG. 3 b , the first coating layer includes a first glue material 1021 and a filler 1011 mixed in the first glue material 1021 .
  • the filler 1011 in the first coating layer 11 has a certain hardness and can play a supporting role, and the first glue material 1021 in the first coating layer 11 has certain fluidity and viscosity. Under the extrusion of the heat dissipation structure 30 , the gap between the heat dissipation structure 30 and the substrate 10 can be filled, and the effect of adhesion can be achieved. Wherein, in order to avoid the stacking of fillers in the first glue material 1021, the first coating layer 11 should be formed in a small amount.
  • the material and shape of the filler 1011 are not limited in the embodiments of the present application.
  • the material and shape of the filler 1011 may be the same as those of the filler in the previous embodiments.
  • S402 as shown in FIG. 12 b , form a second coating layer 12 on the second surface of the substrate 10 , so that the second coating layer 12 fills the gaps of the first coating layer.
  • the second coating layer 12 includes: a second glue material.
  • the embodiments of the present application do not limit the materials of the first glue material 1021 and the second glue material, and the materials of the first glue material 1021 and the second glue material may be the same as the support materials in the foregoing embodiments.
  • the material of the glue in the structure and glue is the same.
  • the first glue material 1021 and the second glue material can be made of the same material or different.
  • the adhesive layer 100 can have a certain supporting effect.
  • the present application does not limit the sequence of the above steps, and the sequence of the above steps may be adjusted according to different manufacturing processes.
  • the embodiments of the present application do not limit the dispensing sequence of the support structure 101 and the adhesive material 102:
  • the first coating 11 may be dispensed first, and then the second coating 12 may be dispensed.
  • the second coating layer 12 may be applied first, and then the first coating layer 11 may be applied.
  • the support structure 101 and the adhesive material 102 can also be applied simultaneously, which all belong to the protection scope of the present application.

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Abstract

本申请实施例公开了一种封装芯片及芯片的封装方法，该封装芯片包括：基板、芯片和散热结构；该散热器设置在该基板上，且该散热结构和该基板围成第一空间，该芯片被容纳在该第一空间内；该散热结构的第一表面与该基板的第二表面通过胶层连接，该胶层包括：胶材，以及间隔设置的多个支撑结构，该支撑结构抵靠在该第一表面和该第二表面上。由此，封装芯片时，可以通过散热结构将胶材压到支撑结构的厚度以控制胶层厚度。其中，可以调整该支撑结构的高度，使散热结构和基板之间的胶层厚度适中，保证封装应力可靠性的同时兼顾翘曲控制，提高了封装可靠性。

Description

封装芯片及芯片的封装方法 技术领域
本申请实施例涉及电子封装技术领域，尤其涉及一种封装芯片及芯片的封装方法。
背景技术
目前，芯片被广泛用于高速数据通信和人工智能领域，随着技术的发展，芯片的集成度逐渐提升，封装芯片的尺寸也越来越大。
如图1、图2所示，封装芯片包括基板10，以及设置在基板上的芯片20，随着封装芯片尺寸的增大，芯片20与基板10的热膨胀系数失配较严重，基板10容易发生翘曲。该封装芯片还包括：散热盖(Lid)30(或加固环(Ring))，其中，散热盖30(或加固环)可以平衡封装芯片的翘曲。
其中，可以采用绝缘胶(Adheisve，Ad)70连接散热盖30与基板10。
然而，绝缘胶的厚度难以控制，当绝缘胶偏厚的时候，散热盖与基板变形耦合程度较小，封装翘曲变大，严重影响焊接的良率。当绝缘胶偏薄的时候，散热盖与基板变形耦合程度较大，散热盖的变形更容易传递到封装芯片，导致封装内应力加剧，影响封装可靠性。
发明内容
本申请实施例提供一种封装芯片及芯片的封装方法，以更好的控制胶层厚度，提高焊接良率和封装可靠性。
为达到上述目的，本申请实施例采用如下技术方案：
本申请实施例的第一方面，提供一种封装芯片，包括：基板、芯片和散热结构；该散热器设置在该基板上，且该散热结构和该基板围成第一空间，该芯片被容纳在该第一空间内；该散热结构的第一表面与该基板的第二表面通过胶层连接，该胶层包括：胶材，以及间隔设置的多个支撑结构，该支撑结构抵靠在该第一表面和该第二表面上。由此，封装该芯片时，可以通过散热结构将胶层压到支撑结构的厚度以控制胶层厚度。其中，可以调整该支撑结构的高度，使得散热结构和基板之间的胶层厚度适中，保证封装应力可靠性的同时兼顾翘曲控制，提高了封装可靠性。
一种可选的实现方式中，该支撑结构包括：形成于该第一表面和该第二表面之间的、间隔的柱状结构，该柱状结构的两端分别抵靠在该第一表面和第二表面上；该胶材填充于该多个柱状结构之间，其中，该柱状结构由胶材固化后成型。由此，支撑结构具备一定的硬度，能够起到支撑作用，而胶材还具有一定的流动性和粘性能够在散热结构的挤压下，填充散热结构和基板之间的缝隙，并起到粘连的效果。
一种可选的实现方式中，该支撑结构固化后的形状为球形、立方体形状或柱状体形状。
一种可选的实现方式中，该支撑结构包括：混合在该胶材中的填料，该填料抵靠在该第一表面和该第二表面上。由此，通过在胶材中设置填料，可以精准控制胶层厚度。
一种可选的实现方式中，该填料采用：树脂、橡胶、塑料、纤维或高分子基复合材料中的一种或几种。
一种可选的实现方式中，该填料的形状为柱形，方形，梯形或球形。
一种可选的实现方式中，该支撑结构的厚度为30-300um。
一种可选的实现方式中，该支撑结构和该胶材的胶材包括：底部填充剂、绝缘胶、包封剂或填充剂中的一种或几种。
一种可选的实现方式中，该散热结构和该芯片之间设有散热胶。
一种可选的实现方式中，该散热结构包括：环形支架和盖板，该环形支架设置在该基板上，该盖板被该环形支架支撑于该基板上，该环形支架、该盖板和该基板围成该第一空间。
一种可选的实现方式中，该环形支架与该盖板一体成型。
一种可选的实现方式中，该芯片通过焊球与该基板连接。
一种可选的实现方式中，焊球的间隙中设有有底胶。
本申请实施例的第二方面，提供一种芯片封装方法，包括：将芯片固定在基板的第二表面上；在该基板的第二表面点涂胶层，其中，该胶层包括：胶材，以及间隔设置的多个支撑结构；将散热结构的第一表面与该胶层连接，并固化该胶层。
一种可选的实现方式中，在该基板的第二表面点涂胶层，包括：在该基板第二表面的多个位置点涂混合有填料的胶材；其中，该胶层固化后，该填料抵靠在该第一表面和该第二表面上。
一种可选的实现方式中，该在该基板的第二表面点涂胶层，包括：在该基板的第二表面的多个位置形成支撑结构；固化该支撑结构；其中，该胶层固化后，该支撑结构的两端分别抵靠在该第一表面和该第二表面上；在该基板的第二表面上点涂该填充胶材，使得该填充胶材填充在该支撑结构的间隙中。
附图说明
图1为一种封装芯片的结构示意图；
图2为一种封装芯片的俯视图；
图3为本申请实施例提供的一种封装芯片的结构示意图；
图3a为本申请实施例提供的一种封装芯片的俯视图；
图3b为本申请实施例提供的另一种封装芯片的俯视图；
图3c为本申请实施例提供的另一种封装芯片的俯视图；
图4a为本申请实施例提供的一种封装芯片的俯视图；
图4b为本申请实施例提供的另一种封装芯片的俯视图；
图5为本申请实施例提供的一种芯片封装方法流程图；
图6a、图6b、图6c、图6d分别为执行图5所示的各个步骤分别得到的结构示意图；
图6e为本申请实施例提供的封装芯片的使用状态图；
图7为本申请实施例提供的另一种芯片封装方法流程图；
图8a、图8b分别为执行图7所示的各个步骤分别得到的结构示意图；
图9为本申请实施例提供的另一种芯片封装方法流程图；
图10为执行图9所示的各个步骤得到的结构示意图；
图11为本申请实施例提供的另一种芯片封装方法流程图；
图12a、图12b分别为执行图11所示的各个步骤分别得到的结构示意图。
具体实施方式
为了使本申请的目的、技术方案和优点更加清楚，下面将结合附图对本申请作进一步地详细描述。
以下，术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。
此外，本申请中，“上”、“下”等方位术语是相对于附图中的部件示意置放的方位来定义的，应当理解到，这些方向性术语是相对的概念，它们用于相对于的描述和澄清，其可以根据附图中部件所放置的方位的变化而相应地发生变化。
下面结合附图对本申请实施例提供的封装芯片进行说明。图3为本申请实施例提供的封装芯片的剖视图。
其中，该封装芯片例如采用倒装芯片球栅格阵列(Flip Chip Ball Grid Array，FC-BGA)的封装格式。如图3所示，该封装芯片包括：基板10、芯片20、和散热结构30。所述芯片20位于所述基板10的一个表面上，并与所述基板10电连接。所述散热结构30与所述基板10的第一表面围设成一个密封的空间，所述芯片20位于所述密封空间内，所述散热结构30既可以用于保护芯片20，还可以用于为芯片20进行散热。
在本申请一些实施例中，该封装芯片可以设置在电路板上。参考图6e，其中，基板10和电路板001分别包括相对的第一表面和第二表面，基板10的第二表面与电路板001的第一表面相对。
在具体设置基板10时，基板10例如位于电路板001的第一表面上，并且基板10例如通过焊球(或凸块(Bump))与电路板001固定连接，应当理解的是，图6e所示的基板10与电路板001之间的焊接仅仅为一种具体的实施方式，在本申请实施例中还可以采用其他的连接方式进行连接。
此外，对于该基板10可以采用如硅、陶瓷、有机基板10等不同材质的基板10。
芯片20例如可以是裸片，也可以是封装了裸片的封装结构。在具体设置芯片20时，芯片20例如位于基板10的第一表面，芯片20包括相对的第一表面和第二表面，以及连接第一表面和第二表面的侧面，芯片20与基板10连接时，芯片20的第二表面与基板10的第一表面相对，在芯片20与基板10的电路层连接时，例如可以采用焊球50进行连接，或者还可以采用跳线进行连接，无论采用哪种方式，只需要能够实现电连接即可。
在通过焊球50进行连接时，例如还可以在焊球50的间隙中注入填充材料60。填充材料60的材质具体可以为：硅胶、聚烯烃树脂、环氧树脂，改性环氧树脂，硅树脂和改性硅树脂中的一种或多种。
芯片20在使用中会产生热量，为了将芯片20产生的热量传递至外部环境中以进行散热，例如还在芯片20上罩设有散热结构30。
具体设置该散热结构30时，该散热结构30例如包括设置在基板10第一表面的支架301，以及盖合在支架301上的盖板302。该支架301可以与盖板302一体成型。或者，该支架301和盖板302可以是两个独立器件固定连接在一起。具体的固定连接方式可采用焊接、粘接、卡合连接或者采用连接件(如螺栓或螺钉)进行连接。
该支架301与盖板302，可由金属材料(例如，铜、铝或二者的合金)制成。该支架301与盖板302用于为芯片20进行散热。
参考图3，本申请中的散热结构30的横截面为长方形形状。当然在能够实现本发明目的的情况下，散热结构30并不局限于截面为长方形，截面也可以为圆形、梯形或其他形状。在本发明实施例中，散热结构30的形状与基板10的形状保持一致。
目前，随着现有的芯片20越做越大，用于承载芯片20的基板10也随之变大，散热结构30的尺寸也适应性变大，这就使得在将基板10焊接到电路板001上时，基板10受热膨胀变形，其中，散热结构30强度较大，因此能够将基板压紧，避免基板变形。如图1所示，可以采用绝缘胶70(Adheisve，Ad)连接散热盖与基板。
然而，绝缘胶的厚度难以控制，当绝缘胶偏厚的时候，散热盖与基板变形耦合程度较小，封装翘曲(Warpage)变大，严重影响焊接的良率。当绝缘胶偏薄的时候，散热盖与基板变形耦合程度较大，散热盖的变形更容易传递到封装芯片，导致封装内应力(Stress)加剧，影响封装可靠性。
为此，本申请实施例提供了一种胶层厚度可控的封装芯片，如图3、图3a、图3b所示，所述散热结构30与所述基板10通过胶层100连接，所述胶层100包括：
支撑结构101和胶材102。
在一些实施例中，如图3a所示，所述支撑结构102和胶材102间隔分布于所述散热结构30和基板10之间。
在本发明实施例中，将胶层100通过两个工艺步骤来分别形成的支撑结构101和胶材102，使得在将散热结构30安装至基板10上面的时候，胶层100一方面能够提供粘合固定的效果，一方面又能对散热结构30提供支撑，调整整个胶层100的厚度。
在可选择的实施例中，可以先在基板10上形成支撑结构101。待支撑结构101固化成型后，再点涂胶材102。点涂胶材102后，可以立即将散热结构30安装至基板10上，此时，支撑结构101已经具备一定的硬度，能够起到支撑作用，而胶材102还具有一定的流动性和粘性能够在散热结构30的挤压下，填充散热结构30和基板10之间的缝隙，并起到粘连的效果。为了实现这一目的，胶材102在成型时，应该量大。
在本发明实施例汇总，支撑结构101可以是由胶材在基板10上固化后间隔成型的结构件。而胶材102形成在支撑结构10之间。所述支撑结构101可以是柱形，方形或者梯形等。在可选择的实施例中，由于支撑结构101可以是通过点胶的方式形成在基板10上，其形状也可以是球形。
在本发明实施例中，可以通过调整支撑结构101成型时的高度，来准确控制整个胶层100的厚度，避免胶层厚度过大或过小。
在本发明实施例中，可以通过控制胶材的用量调整支撑结构101成型时的高度，使得支撑结构101形成的支撑结构的高度满足预设值。
其中，胶材的用量可以通过多次试验得到，也可以根据散热结构30和基板10的 变形耦合性能计算得到，这些均属于本申请的保护范围。本实施例中，胶层100的厚度例如为30-300um。
本实施例中，其中，当支撑结构的高度为预设值时，散热结构30与基板10变形耦合程度适中，散热结构30与基板10由于热膨胀系数(Coefficient of Thermal Expansion，CTE)不同产生的热机械应力传递至胶层100时，可以在胶层100位置降低，提高了封装可靠性。
本申请实施例对所述支撑结构101和所述胶材102的材质不做限制，二者可以使用相同的材料，也可以不同。
所述支撑结构101和所述胶材102的材质包括但不限于：绝缘胶(Adhesive)、底部填充胶(Underfill)、包封胶(Dam)、填充胶(fill)等胶材。
其中，绝缘胶是具有良好电绝缘性能的一种复合胶。
底部填充胶是依靠毛细作用流动的环氧类底部填充胶，填充胶固化后，可以提高连接的机械强度。
本申请实施例对所述支撑结构101数量和分布不做限制。通常来说，支撑结构101可以分布于基板10与散热结构30的粘结面的四周或者边缘位置，从而能提供稳定的粘连和支撑效果。
其中，在本申请的一些实施例中，如图3a所示，基板10上设有8个横截面为圆形的支撑结构，其中，基板10的表面为矩形，基板10的四个顶点各设有一个支撑结构，同时基板10每条侧边的中间位置也分别设有一个支撑结构，相邻的支撑结构之间设有矩形的胶材102。
在本申请的另一些实施例中，如图4a所示，基板10上设有4个横截面为圆形的支撑结构101，其中，基板10的表面为矩形，支撑结构101分别设置在基板10的四个顶点位置。基板10的每条侧边上设有2个矩形的胶材102。
在其他的实施例中，如图4b所示，基板10上设有4个横截面为圆形的支撑结构101，其中，基板10的表面为矩形，支撑结构101分别设置在基板10每条侧边的中间位置。基板10的每条侧边上设有2个矩形的胶材102。
现在可选择的实施例中，本发明还提供另一种胶层100。如图3b所示，所述胶层100包括混合在所述胶材102中的填料1011和胶材102，所述填料可以作为支撑结构，所述填料1011抵靠在所述第一表面和所述第二表面上。
在本发明实施例中，将胶层100通过一个工艺步骤来分别形成的支撑结构101和胶材102，使得在将散热结构30安装至基板10上面的时候，胶层100一方面能够提供粘合固定的效果，一方面又能对散热结构30提供支撑，调整整个胶层100的厚度。
在可选择的实施例中，可以在基板10上点涂混合有填料1011的胶材102，接着可以将散热结构30安装至基板10上。其中，胶材102中的填料1011具备一定的硬度，能够起到支撑作用，而胶材102则具有一定的流动性和粘性能够在散热结构30的挤压下，填充散热结构30和基板10之间的缝隙，并起到粘连的效果。
在本发明实施例汇总，支撑结构可以是混合在胶材102中的填料1011。所述填料可以是是由二氧化硅、树脂、橡胶、塑料、纤维或高分子基复合材料中的一种或几种制成的硬质颗粒。所述填料的形状可以是柱形，方形，梯形或球形。
在本发明实施例中，可以通过调整填料的尺寸，来准确控制整个胶层100的厚度，避免胶层厚度过大或过小。
在本发明实施例中，其中，填料的尺寸可以通过多次试验得到，也可以根据散热结构30和基板10的变形耦合性能计算得到，这些均属于本申请的保护范围。本实施例中，胶层100的厚度例如为30-300um。
本实施例中，其中，当支撑结构的高度为预设值时，散热结构30与基板10变形耦合程度适中，散热结构30与基板10由于热膨胀系数(Coefficient of Thermal Expansion，CTE)不同产生的热机械应力传递至胶层100时，可以在胶层100位置降低，提高了封装可靠性。
现在可选择的实施例中，本发明还提供另一种胶层100。如图3b所示，该胶层100包括：第一涂层11和第二涂层12，所述第一涂层11是由胶材和填料组成的混合物。如图3b所示，所述第一涂层包括第一胶材1021，以及混杂在所述第一胶材1021中的填料1011。
所述第二涂层12包括：第二胶材。
在本发明实施例中，将胶层100通过两个工艺步骤来分别形成第一涂层11和第二涂层12，使得在将散热结构30安装至基板10上面的时候，胶层100一方面能够提供粘合固定的效果，一方面又能对散热结构30提供支撑，调整整个胶层100的厚度。
在可选择的实施例中，在基板10上点涂第一涂层11和第二涂层12后，可以立即将散热结构30安装至基板10上。其中，第一涂层11中的填料1011具备一定的硬度，能够起到支撑作用，而第一涂层11中的第一胶材1021和第二涂层12中的第二胶材具有一定的流动性和粘性。能够在散热结构30的挤压下，填充散热结构30和基板10之间的缝隙，并起到粘连的效果。为了实现这一目的，第二涂层12在成型时，应该量大。其中，为了避免第一胶材1021中的填料堆叠，第一涂层11在成型时，应该量小。
在本发明实施例中，由于第一涂层11中包括了填料1011，而所述填料1011能够用来支撑散热结构10。在这种情况下，可以不按顺序点涂支撑结构101和胶材102。比如：
在一些实施例中，可以先形成第一涂层11，再形成第二涂层12：
首先在所述基板10的第一表面上的多个位置形成第一涂层11，接着在所述基板10的第一表面上形成第二涂层12，其中，所述第一涂层11和第二涂层12间隔设置。
在另一些实施例中，可以先形成第二涂层12，再形成第一涂层11：
首先在所述基板10的第一表面上的多个位置形成第二涂层12，接着在所述基板10的第一表面上形成第一涂层11；其中，所述第一涂层11和第二涂层12间隔设置，这些均属于本申请的保护范围。
在本发明实施例汇总，支撑结构可以是混合在第一胶材1021中的填料1011。所述填料可以是是由二氧化硅、树脂、橡胶、塑料、纤维或高分子基复合材料中的一种或几种制成的硬质颗粒。所述填料的形状可以是柱形，方形，梯形或球形。
在本发明实施例中，可以通过调整第一填料的尺寸，来准确控制整个胶层100的厚度，避免胶层厚度过大或过小。
本申请实施例对所述填料1011的材料和形状不做限制。所述填料1011的材料和 形状可以与前述实施例中的填料的材料和形状相同。
本申请实施例对所述第一胶材1021和所述第二胶材的材料不做限制，所述第一胶材1021和所述第二胶材的材料可以与前述的实施例中的支撑结构和胶材中的胶材材料相同。
且第一胶材1021和所述第二胶材可以使用相同的材料，也可以不同。
本申请实施例通过在胶材中增加填料，使得所述胶层100能够具备一定的支撑效果。
由此，可以通过调整填料的尺寸，来准确控制整个胶层100的厚度，避免胶层厚度过大或过小，保证封装应力可靠性的同时兼顾翘曲指标，保障表面组装技术焊接良率。
其中，在一些实施例中，如图3c所示，基板10上8个位置点涂有第一涂层11，其中，基板10的表面为矩形，基板10的四个顶点处点涂有第一涂层11，同时基板10每条侧边的中间位置也分别点涂有第一涂层11，相邻的第一涂层11之间点涂有矩形的第二涂层12。
在另一些实施例中，基板10上4个位置点涂有第一涂层11，其中，基板10的表面为矩形，基板10的四个顶点处分别点涂有第一涂层11。基板10的每条侧边上点涂有2个矩形的第二涂层12。
在其他的实施例中，基板10上4个位置点涂有第一涂层11，其中，基板10的表面为矩形，基板10每条侧边的中间位置也分别点涂有第一涂层11。基板10的每条侧边上设有2个矩形的第二涂层12。
此外，为了进一步提高封装芯片的稳定性，例如还可以在芯片20和散热结构30之间设置散热胶40，可以将芯片20和散热结构30连接，提高了封装芯片的稳定性。其，散热胶还可以有效地将芯片20产生的热量向外界传导。
参考图1，将散热胶40设置在芯片20与散热结构30之间，能够降低芯片20与散热结构30之间的接触热阻。这是由于，凡是表面都会有粗糙度，所以当芯片20与散热结构30的表面接触在一起的时候，不可能完全接触在一起，总会有一些空气隙夹杂在其中，而空气的导热系数非常之小，因此就造成了比较大的接触热阻。而使用散热胶40就可以填充这个空气隙，这样就可以降低接触热阻，提高散热性能。
散热胶40例如包括相对的第一表面和第二表面，散热胶40的第一表面例如与散热结构30邻接，散热胶40的第二表面例如与芯片20的第一表面邻接。
本申请实施例提供的封装芯片，通过在散热结构30和芯片20之间设置散热胶40，使得散热结构30可充分接触芯片20，从而将该芯片20工作时产生的热量及时传导至外界环境中。
散热胶40例如可以采用能够导电的热界面材料(Thermal Interface Materials，TIM)，例如，铟等低熔点金属，也可以采用绝缘的热界面材料，例如硅胶或者聚烯烃树脂。
具体设置散热胶40时，若散热胶40采用铟，例如可以先将散热胶40放置在芯片20的第一表面，再将散热结构30固定在散热胶40的上方，接着加热整个封装结构，使得散热胶40融化，以填充芯片20与散热结构30之间的空气隙。
本申请实施例还提供一种芯片封装方法，如图5所示，该芯片的封装方法包括以 下步骤：
S101、图6a、图6b所示，将芯片固定在基板10的第二表面上。
将芯片20固定在基板10的第一表面上，包括：如图6a所示，在芯片20的第一表面上设置焊球50，并通过回流焊的方式将焊球50与基板10的第一表面连接，以及如图6b所示，在焊球50的间隙中注入填充材料60。
S102、如图6c所示，在所述基板10的第二表面点涂胶层100，同时在芯片20背离基板10的表面上涂散热胶40。
其中，所述胶层100包括：支撑结构101和胶材102，所述支撑结构101用于支撑所述散热结构30，所述胶材102用于填充所述支撑结构101的间隙。
其中，支撑结构101用于支撑散热结构30，散热结构30包括密封的环形支架，可以将支撑结构101在基板10边缘的多个位置处点涂，以形成支撑结构。
在本申请实施例的另一种实现方式中，也可以将胶层100设置在散热结构30的第一端，然后，该胶层100随着散热结构30附着在基板10的第一表面。
S103、如图6d所示，将散热结构30与胶层100和散热胶40连接，并固化所述胶层100。
其中，可以通过封装工艺的散热片压合，可通过压力(force)与温度的双重控制将胶层100压到特定的高度，并进行固化定型，以达到所期望的胶层厚度。
此外，散热结构30与所述胶层100连接时，还可以使得散热胶40的第一表面与芯片20的第二表面连接，散热胶40的第二表面与散热结构30连接。
图6e示出了该封装芯片的使用状态图，如图6e所示，芯片20完成封装后，还可以将芯片20与电路板001连接。
其中，可以在基板10的第二表面上设置焊球，并通过回流焊的方式将焊球与电路板001的第一表面连接。
封装芯片1在使用时设置在一个电路板001上，该电路板001例如用于承载该封装芯片，封装芯片1固定在该电路板001上，并与该电路板001电连接。其中，该电路板001可以为常见的印刷电路板001。
在一些实施例中，如图7所示，所述在所述基板10的第二表面点涂胶层100，包括：
S201、如图8a所示，在所述基板10的第二表面的多个位置形成支撑结构。
其中，可以通过控制胶材的用量调整支撑结构101的尺寸。本实施例中，可使得每个位置点涂的胶材用量相同，使得每个位置的支撑结构101尺寸相同。
S202、固化所述支撑结构。
由此，支撑结构101固化后可以形成支撑结构。
S203、如图8b所示，在所述基板10的第一表面上点涂胶材102，使得所述胶材102填充在所述支撑结构101的间隙中。
其中，所述一胶层100和所述胶材102的材质相同或不同。
所述胶材102例如与所述支撑结构101间隔设置，所述胶材102用于填充所述支撑结构101的间隙。
在一些实施例中，胶材102可以采用和支撑结构101相同的材质。在另一些实施 例中，支撑结构101可以采用和胶材102不同的材质。
其中，可以将支撑结构101的厚度作为参考，所述胶材102的厚度等于所述支撑结构101的厚度。
在本申请另一些实施例中，如图9所示，所述在所述基板10的第一表面点涂胶层100，包括：
S301、如图10所示，在所述基板10的第一表面上的多个位置点涂混合有填料1011的胶材102。
其中，混合在所述胶材中的填料可以作为支撑结构，所述胶层100固化后，所述填料抵靠在所述第一表面和所述第二表面上。
其中，填料具备一定的硬度，能够起到支撑作用，而胶材102则具有一定的流动性和粘性，能够在散热结构30的挤压下，填充散热结构30和基板10之间的缝隙，并起到粘连的效果。
所述填料可以是是由二氧化硅、树脂、橡胶、塑料、纤维或高分子基复合材料中的一种或几种制成的硬质颗粒。所述填料的形状可以是柱形，方形，梯形或球形。
在本发明实施例中，可以通过调整填料的尺寸，来准确控制整个胶层100的厚度，避免胶层厚度过大或过小。
在本申请另一些实施例中，如图11所示，所述在所述基板10的第二表面点涂胶层100，包括：
S401、如图12a所示，在所述基板10的第二表面上的多个位置形成第一涂层11。
其中，所述第一涂层11是由胶材和填料组成的混合物。如图3b所示，所述第一涂层包括第一胶材1021，以及混杂在所述第一胶材1021中的填料1011。
其中，第一涂层11中的填料1011具备一定的硬度，能够起到支撑作用，而第一涂层11中的第一胶材1021具有一定的流动性和粘性。能够在散热结构30的挤压下，填充散热结构30和基板10之间的缝隙，并起到粘连的效果。其中，为了避免第一胶材1021中的填料堆叠，第一涂层11在成型时，应该量小。
本申请实施例对所述填料1011的材料和形状不做限制。所述填料1011的材料和形状可以与前述实施例中的填料的材料和形状相同。
S402、如图12b所示，在所述基板10的第二表面上形成第二涂层12，使得所述第二涂层12填充在所述第一涂层的间隙中。
所述第二涂层12包括：第二胶材。
本申请实施例对所述第一胶材1021和所述第二胶材的材料不做限制，所述第一胶材1021和所述第二胶材的材料可以与前述的实施例中的支撑结构和胶材中的胶材的材料相同。且第一胶材1021和所述第二胶材可以使用相同的材料，也可以不同。
本申请实施例通过在胶材中增加填料，使得所述胶层100能够具备一定的支撑效果。
要说明的是，本申请对上述步骤的先后顺序不做限定，根据制作工艺的不同，可以对上述步骤的先后顺序进行调整。本申请实施例对支撑结构101和胶材102的点涂顺序不做限制：
在一些实施例中，可以先点涂第一涂层11，再点涂第二涂层12。
在另一些实施例中，可以先点涂第二涂层12，再点涂第一涂层11。
当然，在其他的实施例中，也可以同时点涂支撑结构101和胶材102，这些均属于本申请的保护范围。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何在本申请揭露的技术范围内的变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (16)

  1. 一种封装芯片，其特征在于，包括：基板、芯片和散热结构；
    所述散热结构设置在所述基板上，且所述散热结构和所述基板围成第一空间，所述芯片被容纳在所述第一空间内；
    所述散热结构的第一表面与所述基板的第二表面通过胶层连接，所述胶层包括：胶材，以及间隔设置的多个支撑结构，所述支撑结构抵靠在所述第一表面和所述第二表面上。
  2. 根据权利要求1所述的封装芯片，其特征在于，所述支撑结构包括：混合在所述胶材中的填料，所述填料抵靠在所述第一表面和所述第二表面上。
  3. 根据权利要求2所述的封装芯片，其特征在于，所述填料的形状为柱形，方形，梯形或球形。
  4. 根据权利要求2或3所述的封装芯片，其特征在于，所述填料的材质采用：二氧化硅、塑料、橡胶中的一种或几种。
  5. 根据权利要求1所述的封装芯片，其特征在于，所述支撑结构包括：形成于所述第一表面和所述第二表面之间的、间隔的柱状结构，所述柱状结构的两端分别抵靠在所述第一表面和第二表面上；所述胶材填充于所述柱状结构之间。
  6. 根据权利要求5所述的封装芯片，其特征在于，所述柱状结构由胶材固化后成型。
  7. 根据权利要求1-6任一项所述的封装芯片，其特征在于，所述支撑结构的高度为30-300um。
  8. 根据权利要求1-7任一项所述的封装芯片，其特征在于，所述胶材包括：底部填充剂、绝缘胶、包封剂或填充剂中的一种或几种。
  9. 根据权利要求1-8任一项所述的封装芯片，其特征在于，所述散热结构和所述芯片之间设有散热胶。
  10. 根据权利要求1-9任一项所述的封装芯片，其特征在于，所述散热结构包括：环形支架和盖板，所述环形支架设置在所述基板上，所述盖板被所述环形支架支撑于所述基板上，所述环形支架、所述盖板和所述基板围成所述第一空间。
  11. 根据权利要求10所述的封装芯片，其特征在于，所述环形支架与所述盖板一体成型。
  12. 根据权利要求1-11任一项所述的封装芯片，其特征在于，所述芯片通过焊球与所述基板连接。
  13. 根据权利要求1-12任一项所述的封装芯片，其特征在于，焊球的间隙中设有底胶。
  14. 一种芯片封装方法，其特征在于，包括：
    将芯片固定在基板的第二表面上；
    在所述基板的第二表面点涂胶层，其中，所述胶层包括：胶材，以及间隔设置的多个支撑结构；
    将散热结构的第一表面与所述胶层连接，并固化所述胶层。
  15. 根据权利要求14所述的芯片封装方法，其特征在于，所述在所述基板的第二表面点涂胶层，包括：
    在所述基板第二表面的多个位置点涂混合有填料的胶材；其中，所述胶层固化后，所述填料抵靠在所述第一表面和所述第二表面上。
  16. 根据权利要求14所述的芯片封装方法，其特征在于，所述在所述基板的第二表面点涂胶层，包括：
    在所述基板的第二表面的多个位置形成支撑结构；
    固化所述支撑结构；其中，所述胶层固化后，所述支撑结构的两端分别抵靠在所述第一表面和所述第二表面上；
    在所述基板的第二表面上点涂所述胶材，使得所述胶材填充在所述支撑结构的间隙中。
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