WO2022137023A1 - 発光デバイス、発光装置、電子機器、および照明装置 - Google Patents

発光デバイス、発光装置、電子機器、および照明装置 Download PDF

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Publication number
WO2022137023A1
WO2022137023A1 PCT/IB2021/061732 IB2021061732W WO2022137023A1 WO 2022137023 A1 WO2022137023 A1 WO 2022137023A1 IB 2021061732 W IB2021061732 W IB 2021061732W WO 2022137023 A1 WO2022137023 A1 WO 2022137023A1
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Prior art keywords
layer
light emitting
emitting device
electrode
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PCT/IB2021/061732
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English (en)
French (fr)
Japanese (ja)
Inventor
大澤信晴
瀬尾哲史
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to CN202180086121.0A priority Critical patent/CN116648997A/zh
Priority to KR1020237018637A priority patent/KR20230124564A/ko
Priority to JP2022570763A priority patent/JPWO2022137023A1/ja
Priority to US18/039,593 priority patent/US20240099052A1/en
Publication of WO2022137023A1 publication Critical patent/WO2022137023A1/ja
Anticipated expiration legal-status Critical
Priority to JP2026003135A priority patent/JP2026050469A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H10K50/181—Electron blocking layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/321—Inverted OLED, i.e. having cathode between substrate and anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes

Definitions

  • One aspect of the present invention relates to a light emitting device, a light emitting device, an electronic device, and a lighting device.
  • one aspect of the present invention is not limited to the above technical fields.
  • the technical field of one aspect of the invention disclosed in the present specification and the like relates to a product, a method, or a manufacturing method.
  • one aspect of the invention relates to a process, machine, manufacture, or composition (composition of matter). Therefore, more specifically, the technical fields of one aspect of the present invention disclosed in the present specification include semiconductor devices, display devices, light emitting devices, power storage devices, storage devices, driving methods thereof, or manufacturing methods thereof. Can be given as an example.
  • a method for manufacturing an organic EL display capable of forming a light emitting layer without using a fine metal mask is known.
  • a first luminescence organic material containing a mixture of a host material and a dopant material is deposited above an electrode array containing first and second pixel electrodes formed above an insulating substrate.
  • the step of forming the first light emitting layer as a continuous film extending over the display area including the electrode array, and the portion of the first light emitting layer located above the first pixel electrode is not irradiated with ultraviolet light.
  • One aspect of the present invention is to provide a novel light emitting device having excellent convenience, usefulness or reliability. Further, one aspect of the present invention is to provide a novel light emitting device having excellent convenience, usefulness or reliability. Further, one aspect of the present invention is to provide a novel electronic device having excellent convenience, usefulness or reliability. Further, one aspect of the present invention is to provide a novel lighting device having excellent convenience, usefulness or reliability.
  • One aspect of the present invention has an anode sandwiching an EL layer on a cathode, the EL layer has at least a light emitting layer and an oxidation resistant layer on the light emitting layer, and the EL layer has side surfaces.
  • the cathode is in contact with the side surface of the EL layer via the block layer, and the block layer is a light emitting device containing a heterocyclic compound.
  • the EL layer can be protected.
  • the oxidation resistant layer can suppress the oxidation of the EL layer.
  • the side surface (or end portion) of the EL layer can be protected by the block layer.
  • the presence of the block layer can prevent the conduction between the first electrode and the second electrode, and thus emits light.
  • Various structures can be applied to the device.
  • the oxidation resistant layer may contain one or more selected from oxides of metals belonging to Groups 4 to 8 in the Periodic Table of the Elements and organic compounds having electron-withdrawing groups.
  • the oxide resistant layer is molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, renium oxide, 7,7,8,8-tetracyano-2.
  • 3,5,6-Tetrafluoroquinodimethane, 3,6-difluoro-2,5,7,7,8,8-Hexacyanoquinodimethane, Chloranyl, 2,3,6,7,10,11- Hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane, and 2- (7-dicyanomethylene-1) , 3, 4, 5, 6, 8, 9, 10-octafluoro-7H-pyrene-2-iriden) may contain any one or more selected from malononitrile.
  • the block layer has a first block layer and a second block layer on the first block layer, and the second block layer may contain metal. good.
  • the first block layer has a third block layer in contact with the EL layer, and the third block layer may contain a metal.
  • each EL layer By forming a block layer on the light emitting device having each of the above configurations, the side surface (or end portion) of each EL layer can be protected, and the electrodes formed on each EL layer and a part of each EL layer. Can be prevented from short-circuiting. Further, the second block layer improves the electron injection property from the anode to the EL layer, while the first block layer makes the anode and the EL layer conductive on the side surface (also referred to as the end portion) of the EL layer. It can be a layer that can also be blocked.
  • one aspect of the present invention is a light emitting device having a light emitting device having each of the above configurations, a transistor, or a substrate.
  • one aspect of the present invention includes an adjacent first light emitting device and a second light emitting device, and the first light emitting device sandwiches a first EL layer on a first cathode. It has an anode, the first EL layer has at least a first light emitting layer and a first oxidation resistant layer on the first light emitting layer, and the second light emitting device has a second cathode. It has an anode with a second EL layer interposed therebetween, and the second EL layer has at least a second light emitting layer and a second oxidation resistant layer on the second light emitting layer.
  • the upper surface and the side surface of the EL layer 1 and the upper surface and the side surface of the second EL layer have a block layer, and the second EL layer has a gap between the upper surface and the side surface and the first EL layer.
  • a light emitting device having an anode in the gap via a block layer in contact with the side surface of the first EL layer and the side surface of the second EL layer.
  • a high-definition light emitting device display panel exceeding 1000 ppi
  • By providing a gap in the high-definition light emitting device it is possible to provide a light emitting device capable of displaying vivid colors.
  • the first oxidation-resistant layer contains any one or more selected from oxides of metals belonging to Groups 4 to 8 in the Periodic Table of the Elements and organic compounds having electron-withdrawing groups. But it may be.
  • the first oxidation-resistant layer is molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and renium oxide, 7, 7, 8, 8.
  • -Tetracyano-2,3,5,6-tetrafluoroquinodimethane, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranyl, 2,3,6,7, 10,11-Hexaciano-1,4,5,8,9,12-Hexaazatriphenylene, 1,3,4,5,7,8-Hexafluorotetracyano-naphthoquinodimethane, and 2- (7-) Dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-iriden) may contain any one or more selected from malononitrile.
  • the block layer has a first block layer and a second block layer on the first block layer, and the first block layer contains an electron transporting material.
  • the second block layer may contain electron transporting materials and metals.
  • the first block layer has a third block layer in contact with the EL layer, and the third block layer may contain a metal.
  • each EL layer By forming a block layer on the light emitting device having each of the above configurations, the side surface (or end portion) of each EL layer can be protected, and the electrodes formed on each EL layer and a part of each EL layer. Can be prevented from short-circuiting. Further, the second block layer improves the electron injection property from the anode to the EL layer, while the first block layer makes the anode and the EL layer conductive on the side surface (also referred to as the end portion) of the EL layer. It can be a layer that can also be blocked.
  • one aspect of the present invention is an electronic device having a light emitting device having each of the above configurations, a sensor, an operation button, a speaker, or a microphone.
  • one aspect of the present invention is a lighting device including a light emitting device having each of the above configurations and a housing.
  • the sources and drains of a transistor are referred to differently depending on the polarity of the transistor and the potential applied to each terminal.
  • a terminal to which a low potential is given is called a source
  • a terminal to which a high potential is given is called a drain.
  • a terminal to which a low potential is given is called a drain
  • a terminal to which a high potential is given is called a source.
  • the connection relationship between transistors may be described on the assumption that the source and drain are fixed, but in reality, the names of source and drain are interchanged according to the above-mentioned potential relationship. ..
  • the source of a transistor means a source region that is a part of a semiconductor film that functions as an active layer, or a source electrode connected to the semiconductor film.
  • the drain of a transistor means a drain region that is a part of the semiconductor film, or a drain electrode connected to the semiconductor film.
  • the gate means a gate electrode.
  • the state in which the transistors are connected in series means, for example, a state in which only one of the source or drain of the first transistor is connected to only one of the source or drain of the second transistor. do. Further, in the state where the transistors are connected in parallel, one of the source or drain of the first transistor is connected to one of the source or drain of the second transistor, and the other of the source or drain of the first transistor is connected. It means the state of being connected to the other of the source or drain of the second transistor.
  • connection means an electrical connection, and corresponds to a state in which a current, a voltage, or a potential can be supplied or transmitted. Therefore, the connected state does not necessarily mean the directly connected state, and the wiring, resistance, diode, transistor, etc. so that the current, voltage, or potential can be supplied or transmitted.
  • the state of being indirectly connected via a circuit element is also included in the category.
  • one conductive film may be plural, for example, when a part of the wiring functions as an electrode. In some cases, it also has the functions of the components of.
  • connection includes the case where one conductive film has the functions of a plurality of components in combination.
  • one of the first electrode or the second electrode of the transistor refers to a source electrode, and the other refers to a drain electrode.
  • a novel light emitting device having excellent convenience, usefulness or reliability. Further, according to one aspect of the present invention, it is possible to provide a novel light emitting device having excellent convenience, usefulness or reliability. Further, according to one aspect of the present invention, it is possible to provide a novel electronic device having excellent convenience, usefulness or reliability. Further, according to one aspect of the present invention, it is possible to provide a novel lighting device having excellent convenience, usefulness or reliability.
  • 1A to 1C are diagrams illustrating a configuration of a light emitting device according to an embodiment.
  • 2A to 2E are diagrams illustrating the configuration of the light emitting device according to the embodiment.
  • 3A and 3B are diagrams illustrating the configuration of the light emitting device according to the embodiment.
  • 4A and 4B are diagrams illustrating a method of manufacturing a light emitting device according to an embodiment.
  • 5A to 5C are diagrams illustrating a method of manufacturing a light emitting device according to an embodiment.
  • 6A to 6C are diagrams illustrating a method for manufacturing a light emitting device according to an embodiment.
  • 7A and 7B are diagrams illustrating a method of manufacturing a light emitting device according to an embodiment.
  • FIG. 8 is a diagram illustrating a light emitting device according to an embodiment.
  • 9A and 9B are diagrams illustrating a light emitting device and a light emitting device according to an embodiment.
  • FIG. 10 is a diagram illustrating a light emitting device according to an embodiment.
  • 11A to 11C are diagrams illustrating a method for manufacturing a light emitting device according to an embodiment.
  • 12A and 12B are diagrams illustrating a method of manufacturing a light emitting device according to an embodiment.
  • FIG. 13 is a diagram illustrating a light emitting device according to an embodiment.
  • 14A and 14B are diagrams illustrating a light emitting device according to an embodiment.
  • 15A and 15B are diagrams illustrating a part of the structure of the circuit diagram and the light emitting device according to the embodiment.
  • 16A and 16B are diagrams illustrating a light emitting device according to an embodiment.
  • 17A and 17B are diagrams illustrating a light emitting device according to an embodiment.
  • 18A to 18E are diagrams illustrating an electronic device according to an embodiment.
  • 19A to 19E are diagrams illustrating an electronic device according to an embodiment.
  • 20A and 20B are diagrams illustrating an electronic device according to an embodiment.
  • 21A and 21B are diagrams illustrating an electronic device according to an embodiment.
  • FIG. 22 is a diagram illustrating an electronic device according to an embodiment.
  • FIGS. 1A and 1B are cross-sectional views illustrating a light emitting device 100 according to an aspect of the present invention.
  • the light emitting device 100 has a first electrode 101, a second electrode 102, and an EL layer 103.
  • the EL layer 103 has an oxidation resistant layer 105, an electron injection / transport layer 104, and a light emitting layer 113.
  • the first electrode 101 has a region overlapping the second electrode 102, and the EL layer 103 has a region sandwiched between the first electrode 101 and the second electrode 102.
  • the oxidation resistant layer 105 is located on the uppermost layer of the EL layer 103. Thereby, the EL layer 103 can be protected. For example, in the manufacturing process of the light emitting device 100, even when the EL layer 103 is exposed to the atmosphere, the oxidation resistant layer 105 can suppress the oxidation of the EL layer 103. Further, since the electron injection / transport layer 104 is located between the first electrode 101 and the light emitting layer 113 in the EL layer 103, for example, even when the EL layer 103 is exposed to the atmosphere, the EL layer 103 may be exposed to the atmosphere. Oxidation can be suppressed.
  • the oxidation-resistant layer 105 is formed by using an oxidation-resistant material.
  • an electron acceptor material is added to a hole transporting material which is an organic compound, which will be described later as a material that can be used for the charge generation layer of the EL layer.
  • a composite material or a laminated structure of a hole transporting material and an electron acceptor material can be used.
  • the electron acceptor material in the present embodiment, a material described later can be used as the organic acceptor material used for the hole injection layer.
  • the electron acceptor material include an electron-withdrawing group (halogen group or group) such as an oxide or quinodimethane derivative of a metal belonging to Groups 4 to 8 in the Periodic Table of the Elements, a chloranyl derivative, or a hexaazatriphenylene derivative. It is preferable to use an organic compound having a cyano group).
  • halogen group or group such as an oxide or quinodimethane derivative of a metal belonging to Groups 4 to 8 in the Periodic Table of the Elements, a chloranyl derivative, or a hexaazatriphenylene derivative. It is preferable to use an organic compound having a cyano group).
  • examples of the oxides of metals belonging to Groups 4 to 8 in the Periodic Table of the Elements include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and oxidation. Renium can be mentioned.
  • a metal oxide as the electron acceptor material, the oxidation resistance of the oxidation resistant layer 105 can be improved.
  • molybdenum oxide is more preferable as a material for forming the oxidation-resistant layer 105 because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.
  • 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodi as an organic compound having an electron-withdrawing group such as a quinodimethane derivative, a chloranyl derivative, or a hexaazatriphenylene derivative.
  • Methane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8 - hexacianoquinodimethane, chloranyl, 2,3,6,7,10,11-hexaciano-1 , 4,5,8,9,12-Hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ) , 2- (7-Dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene) malononitrile and the like can be used.
  • HAT-CN 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane
  • F6-TCNNQ 2- (7-Dicyanomethylene-1,3,4,5,6,8,9,10-oc
  • a compound such as HAT-CN in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of complex atoms is more preferable as a material for forming the oxidation-resistant layer 105 because the film quality is stable with respect to heat.
  • the oxidation-resistant layer 105 having the above configuration, when a voltage is applied to the light-emitting device 100, holes are injected from the oxidation-resistant layer 105 into the light-emitting layer 113, and electrons are injected into the second electrode 102.
  • the first electrode 101 functions as a cathode and the second electrode 102 functions as an anode.
  • the light emitting device 100 may have a block layer 107.
  • the block layer 107 has a region sandwiched between the second electrode 102 and the oxidation resistant layer 105.
  • the block layer 107 preferably has a laminated structure, and has, for example, a laminated structure of the first block layer 107-1 and the second block layer 107-2.
  • the first block layer 107-1 has a region in contact with the upper surface (or upper portion) and the side surface (or end portion) of the EL layer 103.
  • the second block layer 107-2 is in contact with the second electrode 102.
  • the second electrode 102 has a region in contact with the side surface (or end portion) of the EL layer 103 via the block layer 107 (the first block layer 107-1 and the second block layer 107-2).
  • the block layer 107 can protect the side surface (or end) of the EL layer 103. Further, even if the second electrode 102 is in contact with the side surface (or the end portion) of the EL layer 103 as shown in FIG. 1B, by having the block layer 107, the second electrode 102 and the electron injection can be performed. It is possible to prevent continuity with the transport layer 104. Therefore, various structures can be applied to the light emitting device 100. For example, when a plurality of light emitting devices 100 are arranged side by side, the structure may be such that the second electrodes 102 of the adjacent light emitting devices 100 are connected to each other.
  • an electron transporting material As the material for forming the block layer 107, it is preferable to use an electron transporting material.
  • an electron transporting material is used to form a layer having a higher electric resistance than the second block layer 107-2. It is possible to prevent the conduction between the second electrode 102 and the electron injection / transport layer 104.
  • the electron transporting material for forming the block layer 107 for example, it is preferable to use a heterocyclic compound. Specific examples of the electron transportable material will be described in the present embodiment.
  • the block layer 107 can have a function as an EL layer. However, in consideration of the driving voltage of the light emitting device and the like, a layer to which an electron donor (donor) is added is further provided at the interface with the EL layer 103 in the first block layer 107-1 (for example, the first block layer 107-1).
  • the block layer 107-3) of No. 3 is more preferable (see FIG. 1C).
  • the second block layer 107-2 in contact with the second electrode 102 a material to which an electron donor is added to the electron transporting material is used, and the first block layer 107-1 is used.
  • the electron donor an alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to Group 2 or Group 13 in the Periodic Table of the Elements, and an oxide or carbonate thereof can be used.
  • lithium Li
  • cesium Cs
  • magnesium Mg
  • calcium Ca
  • Yb itterbium
  • In indium
  • lithium oxide cesium carbonate and the like.
  • an organic compound such as tetrathianaphthalene may be used as an electron donor.
  • the second block layer 107-2 by making the second block layer 107-2 a layer having a lower electric resistance than the first block layer 107-1, the electron injection property from the EL layer 103 to the second electrode 102 can be improved.
  • the first block layer 107-1 can prevent the conduction between the second electrode 102 and the electron injection / transport layer 104 on the side surface (also referred to as an end portion) of the EL layer 103. Can be.
  • the material described in this embodiment can be used as the material for the electron injection layer and the electron transport layer.
  • the electron injection / transport layer 104 may be formed of a single layer or a plurality of layers. Further, the electron injection layer and the electron transport layer may be formed separately. Further, the electron injection / transport layer 104 may be only one of the electron injection layer and the electron transport layer.
  • the configuration of the light emitting device according to one aspect of the present invention is not limited to the configuration shown in FIG.
  • the basic structure of the light emitting device will be described with reference to FIGS. 2A to 2E.
  • FIG. 2A shows a light emitting device having an EL layer including a light emitting layer between a pair of electrodes. Specifically, it has a structure in which the EL layer 103 is sandwiched between the first electrode 101 and the second electrode 102. The EL layer 103 has an oxidation resistant layer 105.
  • FIG. 2B has a laminated structure (tandem structure) having a plurality of EL layers (103a, 103b) between the pair of electrodes (two layers in FIG. 2B) and a charge generating layer 106 between the EL layers. Indicates a light emitting device.
  • the light emitting device having a tandem structure can realize a light emitting device that can be driven at a low voltage and has low power consumption.
  • the EL layer 103b has an oxidation resistant layer 105.
  • the charge generation layer 106 injects electrons into one EL layer (103a or 103b) and the other EL layer (103b or 103b). It has a function of injecting holes into 103a). Therefore, in FIG. 2B, when a voltage is applied to the first electrode 101 so that the potential is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the EL layer 103a, and the EL layer 103b is positive. The holes will be injected.
  • the charge generation layer 106 is transparent to visible light from the viewpoint of light extraction efficiency (specifically, the transmittance of visible light to the charge generation layer 106 is 40% or more). preferable. Further, the charge generation layer 106 functions even if the conductivity is lower than that of the first electrode 101 or the second electrode 102.
  • FIG. 2C shows a laminated structure of the EL layer 103 of the light emitting device according to one aspect of the present invention.
  • the first electrode 101 functions as a cathode and the second electrode 102 functions as an anode.
  • the EL layer 103 has an electron injection layer 115, an electron transport layer 114, a light emitting layer 113, a hole transport layer 112, a hole injection layer 111, and an oxidation resistant layer 105 on the first electrode 101. It has a sequentially laminated structure.
  • the light emitting layer 113 may be configured by laminating a plurality of light emitting layers having different light emitting colors.
  • a light emitting layer containing a light emitting substance that emits red light, a light emitting layer containing a light emitting substance that emits green light, and a light emitting layer containing a light emitting substance that emits blue light are laminated, or via a layer having a carrier transportable material. It may be a laminated structure. Alternatively, it may be a combination of a light emitting layer containing a light emitting substance that emits yellow light and a light emitting layer containing a light emitting substance that emits blue light.
  • the laminated structure of the light emitting layer 113 is not limited to the above.
  • the light emitting layer 113 may be configured by laminating a plurality of light emitting layers having the same light emitting color.
  • a first light emitting layer containing a light emitting substance that emits blue light and a second light emitting layer containing a light emitting substance that emits blue light are laminated or laminated via a layer having a carrier transportable material. May be there.
  • a plurality of light emitting layers having the same emission color it may be possible to improve the reliability as compared with the configuration of a single layer. Further, even when a plurality of EL layers are provided as in the tandem structure shown in FIG.
  • the EL layers are sequentially laminated from the cathode side as described above.
  • the stacking order of the EL layers 103 is reversed.
  • 115 on the first electrode 101, which is an anode becomes a hole injection layer
  • 114 becomes a hole transport layer
  • 113 becomes a light emitting layer
  • 112 becomes an electron transport layer.
  • 111 have a configuration in which the electron injection layer is formed.
  • the light emitting layer 113 included in the EL layer (103, 103a, 103b) has a light emitting substance or a plurality of substances in an appropriate combination, respectively, and is configured to obtain fluorescent light emission or phosphorescent light emission exhibiting a desired light emission color. Can be. Further, the light emitting layer 113 may have a laminated structure having different light emitting colors. In this case, different materials may be used for the luminescent substance or other substances used for each of the laminated light emitting layers. Further, different emission colors may be obtained from the plurality of EL layers (103a, 103b) shown in FIG. 2B. In this case as well, the luminescent substance or other substance used for each light emitting layer may be a different material.
  • the first electrode 101 shown in FIG. 2C is used as a reflecting electrode
  • the second electrode 102 is used as a semitransmissive / semi-reflecting electrode
  • a micro optical resonator microwavecavity
  • the light emitted from the light emitting layer 113 included in the EL layer 103 can be resonated between both electrodes, and the light emitted from the second electrode 102 can be strengthened.
  • the first electrode 101 of the light emitting device is a reflective electrode having a laminated structure of a conductive material having a reflective property and a conductive material having a translucent property (transparent conductive film), a film of the transparent conductive film.
  • Optical adjustment can be performed by controlling the thickness.
  • the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 is m ⁇ / with respect to the wavelength ⁇ of the light obtained from the light emitting layer 113. It is preferable to adjust so that it is 2 (however, m is a natural number of 1 or more) or its vicinity.
  • the optical distance from the electrode 102 of 2 to the region (light emitting region) where the desired light of the light emitting layer 113 is obtained is (2 m'+ 1) ⁇ / 4 (where m'is a natural number of 1 or more) or its vicinity. It is preferable to adjust so as to be.
  • the light emitting region referred to here means a recombination region of holes and electrons in the light emitting layer 113.
  • the spectrum of the specific monochromatic light obtained from the light emitting layer 113 can be narrowed, and light emission with good color purity can be obtained.
  • the optical distance between the first electrode 101 and the second electrode 102 is, strictly speaking, the total thickness from the reflection region of the first electrode 101 to the reflection region of the second electrode 102. can.
  • the optical distance between the first electrode 101 and the light emitting layer from which the desired light can be obtained is, strictly speaking, the optical path between the reflection region in the first electrode 101 and the light emitting region in the light emitting layer where the desired light can be obtained. It can be said that it is a distance.
  • an arbitrary position of the first electrode 101 can be set as the reflection region, desired. It is assumed that the above-mentioned effect can be sufficiently obtained by assuming that an arbitrary position of the light emitting layer from which light is obtained is a light emitting region.
  • the light emitting device shown in FIG. 2D is a light emitting device having a tandem structure and has a microcavity structure, so that light having a different wavelength (monochromatic light) can be extracted from each EL layer (103a, 103b). Therefore, it is not necessary to paint differently (for example, a Side By Side (SBS) structure in which RGB is painted separately) to obtain different emission colors. Therefore, it is easy to realize high definition. It can also be combined with a colored layer (color filter). Further, since it is possible to enhance the emission intensity in the front direction of a specific wavelength, it is possible to reduce the power consumption.
  • the EL layer 103b has an oxidation resistant layer 105.
  • the light emitting device shown in FIG. 2E is an example of the light emitting device having a tandem structure shown in FIG. 2B, and as shown in the figure, three EL layers (103a, 103b, 103c) form a charge generation layer (106a, 106b). It has a structure that is sandwiched and laminated.
  • the three EL layers (103a, 103b, 103c) each have a light emitting layer (113a, 113b, 113c), and the light emitting colors of the light emitting layers can be freely combined.
  • the light emitting layer 113a may be blue, the light emitting layer 113b may be red, green, or yellow, and the light emitting layer 113c may be blue, but the light emitting layer 113a may be red and the light emitting layer 113b may be blue, green, or yellow. Either of the above, the light emitting layer 113c may be red.
  • the EL layer 103c has an oxidation resistant layer 105.
  • At least one of the first electrode 101 and the second electrode 102 is a translucent electrode (transparent electrode, transflective / semireflecting electrode, etc.). do.
  • the electrode having translucency is a transparent electrode
  • the transmittance of visible light of the transparent electrode is 40% or more.
  • the reflectance of visible light of the semi-transmissive / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less.
  • the resistivity of these electrodes is 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the reflective electrode when one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflecting electrode), the reflective electrode is visible.
  • the light reflectance is 40% or more and 100% or less, preferably 70% or more and 100% or less. Further, it is preferable that the resistivity of this electrode is 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the structure of the EL layer is the same for the light emitting devices of FIGS. 2A and 2C that do not have a tandem structure.
  • the first electrode 101 is formed as a reflective electrode
  • the second electrode 102 is formed as a semitransmissive / semi-reflecting electrode. Therefore, a single or a plurality of desired electrode materials can be used to form a single layer or laminated.
  • the second electrode 102 is formed by selecting a material in the same manner as described above.
  • the following materials can be appropriately combined and used as long as the functions of both electrodes described above can be satisfied.
  • metals, alloys, electrically conductive compounds, and mixtures thereof can be appropriately used. Specific examples thereof include In—Sn oxide (also referred to as ITO), In—Si—Sn oxide (also referred to as ITSO), In—Zn oxide, and In—W—Zn oxide.
  • Other elements belonging to Group 1 or Group 2 of the Periodic Table of Elements eg, Lithium (Li), Cesium (Cs), Calcium (Ca), Strontium (Sr)), Europium (Eu), Ytterbium Rare earth metals such as (Yb), alloys containing these in appropriate combinations, and other graphenes can be used.
  • the electron injection layer 115a and the electron transport layer 114a of the EL layer 103a are sequentially laminated and formed on the first electrode 101 by a vacuum vapor deposition method. After the EL layer 103a and the charge generation layer 106 are formed, the electron injection layer 115b and the electron transport layer 114b of the EL layer 103b are similarly laminated and formed on the charge generation layer 106.
  • the hole injection layer (111, 111a, 111b) has holes from the second electrode 102, which is the anode, or the charge generation layer (106, 106a, 106b) to the EL layer (103, 103a, 103b).
  • the layer to be injected which is a layer containing either or both of an organic acceptor material and a highly hole-injecting material.
  • the organic acceptor material is a material capable of generating holes in the organic compound by separating charges between the LUMO level value and another organic compound having a similar HOMO level value. be. Therefore, as the organic acceptor material, a compound having an electron-withdrawing group (for example, a halogen group or a cyano group) such as a quinodimethane derivative, a chloranil derivative, or a hexaazatriphenylene derivative can be used.
  • an electron-withdrawing group for example, a halogen group or a cyano group
  • a compound such as HAT-CN in which an electron acceptor group is bonded to a fused aromatic ring having a plurality of complex atoms is particularly suitable because it has a high acceptor property and a stable film quality against heat.
  • [3] radialene derivatives having an electron-withdrawing group are preferable because they have very high electron acceptability, and specifically, ⁇ , ⁇ ', ⁇ .
  • Materials with high hole injection properties include metal oxides (molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, etc.) belonging to Group 4 to Group 8 in the Periodic Table of the Elements. Transition metal oxides, etc.) can be used. Specific examples thereof include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide and rhenium oxide. Among the above, molybdenum oxide is preferable because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition, phthalocyanine-based compounds such as phthalocyanine (abbreviation: H 2 Pc) or copper phthalocyanine (abbreviation: CuPc) can be used.
  • H 2 Pc phthalocyanine
  • CuPc copper phthalocyanine
  • low molecular weight compounds such as 4,4', 4''-tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4', 4''-tris.
  • 4,4'-bis [N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl abbreviation: abbreviation: abbreviation: DPAB
  • N, N'-bis ⁇ 4- [bis (3-methylphenyl) amino] phenyl ⁇ -N, N'-diphenyl- (1,1'-biphenyl) -4,4'-diamine abbreviation: DNTPD
  • 1,3,5-Tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (
  • poly (N-vinylcarbazole) (abbreviation: PVK), poly (4-vinyltriphenylamine) (abbreviation: PVTPA), poly [N- (4), which are polymer compounds (oligoforms, dendrimers, polymers, etc.) - ⁇ N'-[4- (4-diphenylamino) phenyl] phenyl-N'-phenylamino ⁇ phenyl) methacrylicamide] (abbreviation: PTPDMA), poly [N, N'-bis (4-butylphenyl)- N, N'-bis (phenyl) benzidine] (abbreviation: Polymer-TPD) and the like can be used.
  • PVK poly (N-vinylcarbazole)
  • PVTPA poly (4-vinyltriphenylamine)
  • PVTPA poly [N- (4), which are polymer compounds (oligoforms, dendrimers, polymers, etc.) - ⁇ N
  • high molecular weight added with an acid such as poly (3,4-ethylenedioxythiophene) / poly (styrene sulfonic acid) (abbreviation: PEDOT / PSS), polyaniline / poly (styrene sulfonic acid) (abbreviation: Pani / PSS).
  • an acid such as poly (3,4-ethylenedioxythiophene) / poly (styrene sulfonic acid) (abbreviation: PEDOT / PSS), polyaniline / poly (styrene sulfonic acid) (abbreviation: Pani / PSS).
  • an acid such as poly (3,4-ethylenedioxythiophene) / poly (styrene sulfonic acid) (abbreviation: PEDOT / PSS), polyaniline / poly (styrene sulfonic acid) (abbreviation: Pani / PSS).
  • a composite material containing a hole transporting material and the above-mentioned organic acceptor material can also be used.
  • electrons are extracted from the hole transporting material by the organic acceptor material, holes are generated in the hole injection layer 111, and holes are injected into the light emitting layer 113 via the hole transport layer 112.
  • the hole injection layer 111 may be formed of a single layer composed of a composite material containing a hole transporting material and an organic acceptor material (electron acceptor material), but the hole transporting material and the organic acceptor material (electron acceptor material) may be formed.
  • the electron acceptor material) may be laminated with different layers to form the material.
  • the hole transporting material a substance having a hole mobility of 1 ⁇ 10 -6 cm 2 / Vs or more when the square root of the electric field strength [V / cm] is 600 is preferable. Any substance other than these can be used as long as it is a substance having a higher hole transport property than electrons.
  • the hole-transporting material examples include ⁇ -electron-rich heteroaromatic compounds (for example, carbazole derivatives, furan derivatives, or thiophene derivatives) and aromatic amines (compounds having an aromatic amine skeleton) having high hole-transporting properties.
  • the material is preferred.
  • Examples of the carbazole derivative (compound having a carbazole skeleton) include a carbazole derivative (for example, a 3,3'-bicarbazole derivative), an aromatic amine having a carbazolyl group, and the like.
  • bicarbazole derivative for example, 3,3'-bicarbazole derivative
  • PCCP 3,3'-bis (9-phenyl-9H-carbazole)
  • BisBPCz 3,3'-bis (1,1'-biphenyl-4-yl) -3,3'-bi-9H-carbazole
  • BismBPCz 9,9'-bis (1,1'-biphenyl-3-yl) -3,3'-bi-9H-carbazole
  • BismBPCz 9- (1,1'-biphenyl-3-yl) -9'-(1,1'-biphenyl-4-yl) -9H, 9'H-3,3'-bicarbazole
  • mBPCCBP 9,2-naphthyl) -9'-phenyl-9H, 9'H-3,3'-bicarbazole
  • aromatic amine having a carbazolyl group examples include 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl) triphenylamine (abbreviation: PCBA1BP) and N- (. 4-biphenyl) -N- (9,9-dimethyl-9H-fluoren-2-yl) -9-phenyl-9H-carbazole-3-amine (abbreviation: PCBiF), N- (1,1'-biphenyl- 4-yl) -N- [4- (9-phenyl-9H-carbazole-3-yl) phenyl] -9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 4,4'- Diphenyl-4''-(9-phenyl-9H-carbazole-3-yl) triphenylamine (abbreviation: PCBBi1BP), 4- (1-naphthyl) -4'-(9-
  • Phenyl] -9-Phenyl-9H-carbazole (abbreviation: PCPN), 1,3-bis (N-carbazolyl) benzene (abbreviation: mCP), 4,4'-di (N-carbazolyl) biphenyl (abbreviation: CBP) , 3,6-bis (3,5-diphenylphenyl) -9-phenylcarbazole (abbreviation: CzTP), 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation: TCPB), 9 -[4- (10-Phenyl-9-anthrasenyl) phenyl] -9H-carbazole (abbreviation: CzPA) and the like can be mentioned.
  • PCPN 1,3-bis (N-carbazolyl) benzene
  • CBP 4,4'-di (N-carbazolyl) biphenyl
  • furan derivative compound having a furan skeleton
  • examples of the furan derivative include 4,4', 4''- (benzene-1,3,5-triyl) tri (dibenzofuran) (abbreviation: DBF3P-II). ), 4- ⁇ 3- [3- (9-Phenyl-9H-fluorene-9-yl) phenyl] phenyl ⁇ dibenzofuran (abbreviation: mmDBFFLBi-II) and the like.
  • thiophene derivative compound having a thiophene skeleton
  • DBT3P-II 1,3,5-tri (dibenzothiophen-4-yl) -benzene
  • DBT3P-II 2,8-diphenyl
  • aromatic amine examples include 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB or ⁇ -NPD), N, N'-. Bis (3-methylphenyl) -N, N'-diphenyl- [1,1'-biphenyl] -4,4'-diamine (abbreviation: TPD), 4,4'-bis [N- (spiro-9,, 9'-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl) triphenylamine (abbreviation: BPAFLP), 4- Phenyl-3'-(9-phenylfluoren-9-yl) triphenylamine (abbreviation: mBPAFLP), N- (9,9-dimethyl-9H-fluoren-2-
  • PVK N-vinylcarbazole
  • PC4-vinyltriphenylamine abbreviations
  • PVTPA poly [N- (4- ⁇ N'-[4- (4-diphenylamino) phenyl] phenyl-N'-phenylamino ⁇ phenyl) methacrylicamide]
  • PTPDMA poly [N, N' -Bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine]
  • Polymer-TPD polymer-TPD
  • an acid such as poly (3,4-ethylenedioxythiophene) / poly (styrene sulfonic acid) (abbreviation: PEDOT / PSS) or polyaniline / poly (styrene sulfonic acid) (abbreviation: Pani / PSS) is added.
  • Molecular compounds, etc. can also be used.
  • the hole transporting material is not limited to the above, and various known materials may be used as the hole transporting material in combination of one or a plurality of known materials.
  • the hole injection layer (111, 111a, 111b) can be formed by using various known film forming methods, and can be formed by, for example, a vacuum vapor deposition method.
  • the hole transport layer (112, 112a, 112b) transfers the holes injected from the first electrode 101 into the light emitting layer (113, 113a, 113b, 113c) by the hole injection layer (111, 111a, 111b). It is the layer to be transported.
  • the hole transport layer (112, 112a, 112b) is a layer containing a hole transport material. Therefore, for the hole transport layer (112, 112a, 112b), a hole transport material that can be used for the hole injection layer (111, 111a, 111b) can be used.
  • the same organic compound as the hole transport layer (112, 112a, 112b) can be used for the light emitting layer (113, 113a, 113b, 113c).
  • the same organic compound is used for the hole transport layer (112, 112a, 112b) and the light emitting layer (113, 113a, 113b, 113c)
  • the hole transport layer (112, 112a, 112b) to the light emitting layer (113, 113a It is more preferable because the holes can be efficiently transported to 113b, 113c).
  • the light emitting layer (113, 113a, 113b) is a layer containing a light emitting substance.
  • a substance exhibiting a light emitting color such as blue, purple, bluish purple, green, yellowish green, yellow, orange, and red is appropriately used. be able to.
  • a configuration that exhibits different light emitting colors by using different light emitting substances for each light emitting layer for example, white light emission obtained by combining light emitting colors having a complementary color relationship
  • a laminated structure in which one light emitting layer has different light emitting substances may be used.
  • the light emitting layer may have one or more kinds of organic compounds (host material, etc.) in addition to the light emitting substance (guest material).
  • the energy gap larger than the energy gap of the existing guest material and the first host material is created as the second host material to be newly added. It is preferable to use a substance having. Further, the lowest singlet excitation energy level (S1 level) of the second host material is higher than the S1 level of the first host material, and the lowest triplet excitation energy level (T1) of the second host material. The level) is preferably higher than the T1 level of the guest material. Further, the minimum triplet excitation energy level (T1 level) of the second host material is preferably higher than the T1 level of the first host material.
  • an excited complex made of two types of host materials can be formed.
  • the organic compound used as the above-mentioned host material is the hole transport layer (112,) as long as the conditions as the host material used for the light emitting layer are satisfied.
  • Examples thereof include organic compounds such as a hole transporting material that can be used for 112a, 112b) or an electron transporting material that can be used for the electron transporting layer (114, 114a, 114b) described later, and a plurality of kinds of organic substances can be mentioned. It may be an excitation complex composed of a compound (the above-mentioned first host material and second host material).
  • An excited complex (also referred to as an exciplex, an exciplex, or an Exciplex) that forms an excited state with a plurality of types of organic compounds has an extremely small difference between the S1 level and the T1 level, and the triplet excitation energy is singlet-excited. It has a function as a TADF material that can be converted into energy.
  • a combination of a plurality of kinds of organic compounds forming an excited complex for example, it is preferable that one has a ⁇ -electron-deficient heteroaromatic ring and the other has a ⁇ -electron-rich heteroaromatic ring.
  • a phosphorescent substance such as iridium, rhodium, a platinum-based organic metal complex, or a metal complex may be used on one side.
  • the luminescent material that can be used for the light emitting layer (113, 113a, 113b, 113c) is not particularly limited, and a luminescent material that converts the singlet excitation energy into light emission in the visible light region or a triplet excitation energy in the visible light region.
  • a luminescent substance that converts light into luminescence can be used.
  • luminescent substance that converts singlet excitation energy into luminescence examples include the following fluorescing substances (fluorescent luminescent substances).
  • fluorescing substances fluorescent luminescent substances
  • pyrene derivative, anthracene derivative, triphenylene derivative, fluorene derivative, carbazole derivative, dibenzothiophene derivative, dibenzofuran derivative, dibenzoquinoxalin derivative, quinoxalin derivative, pyridine derivative, pyrimidine derivative, phenanthrene derivative, naphthalene derivative and the like can be mentioned.
  • the pyrene derivative is preferable because it has a high emission quantum yield.
  • pyrene derivative examples include N, N'-bis (3-methylphenyl) -N, N'-bis [3- (9-phenyl-9H-fluoren-9-yl) phenyl] pyrene-1,6. -Diamine (abbreviation: 1,6 mMFLPAPrun), (N, N'-diphenyl-N, N'-bis [4- (9-phenyl-9H-fluoren-9-yl) phenyl] pyrene-1,6-diamine) (Abbreviation: 1,6FLPAPrn), N, N'-bis (dibenzofuran-2-yl) -N, N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N, N'-bis (abbreviation: 1,6FLPARn) Dibenzothiophen-2-yl) -N, N'-diphenylpyrene-1,6-diamine (abbrevi
  • N- [9,10-bis (1,1'-biphenyl-2-yl) -2-anthryl] -N, 9-diphenyl-9H-carbazole-3-amine abbreviation: 2PCABPhA
  • N- ( 9,10-Diphenyl-2-anthryl) -N, N', N'-triphenyl-1,4-phenylenediamine abbreviation: 2DPAPA
  • N- [9,10-bis (1,1'-biphenyl-) 2-yl) -2-anthryl] -N, N', N'-triphenyl-1,4-phenylenediamine abbreviation: 2DPABPhA
  • 9,10-bis (1,1'-biphenyl-2-yl) -N- [4- (9H-carbazole-9-yl) phenyl] -N-phenylanthracen-2-amine abbreviation: 2YGABPhA
  • the light emitting substance that can be used for the light emitting layer 113 and converts the triplet excitation energy into light emission for example, a substance that emits phosphorescence (phosphorescent light emitting substance) or a thermal activated delayed fluorescence that exhibits thermal activation delayed fluorescence. (Thermally activated extended fluorescent (TADF) material) may be mentioned.
  • the phosphorescent substance refers to a compound that exhibits phosphorescence and does not exhibit fluorescence in any of the temperature ranges of low temperature (for example, 77K) or higher and room temperature or lower (that is, 77K or higher and 313K or lower).
  • the phosphorescent substance preferably has a metal element having a large spin-orbit interaction, and examples thereof include an organic metal complex, a metal complex (platinum complex), and a rare earth metal complex.
  • a transition metal element is preferable, and in particular, it may have a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)). It is preferable to have iridium in particular, because it is possible to increase the transition probability related to the direct transition between the single-term base state and the triple-term excited state.
  • phosphorescent substance (450 nm or more and 570 nm or less: blue or green)
  • examples of the phosphorescent substance having a blue or green color and a peak wavelength of the emission spectrum of 450 nm or more and 570 nm or less include the following substances.
  • Tris [3-methyl-1- (2-methylphenyl) -5-phenyl-1H-1,2,4-triazolat] iridium (III) (abbreviation: [Ir (Mptz1-mp)), an organic metal complex having a skeleton. 3 ]
  • 1H- such as Tris (1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolat) iridium (III) (abbreviation: [Ir (Prptz1-Me) 3 ]).
  • phosphorescent substance (495nm or more and 590nm or less: green or yellow)
  • examples of the phosphorescent substance having a green or yellow color and a peak wavelength of 495 nm or more and 590 nm or less in the emission spectrum include the following substances.
  • Tris (4-methyl-6-phenylpyrimidinat) iridium (III) (abbreviation: [Ir (mppm) 3 ]), Tris (4-t-butyl-6-phenylpyrimidinat) iridium (III).
  • phosphorescent substance (570 nm or more and 750 nm or less: yellow or red)
  • Examples of the phosphorescent substance having a yellow or red color and a peak wavelength of 570 nm or more and 750 nm or less in the emission spectrum include the following substances.
  • Platinum complexes such as Tris (1,3-diphenyl-1,3-propanedionat) (monophenanthroline) Europium (III) (abbreviation: [Eu (DBM) 3 (Phen)]), Tris [1- ( Examples include rare earth metal complexes such as 2-tenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: [Eu (TTA) 3 (Phen)]).
  • the TADF material has a small difference between the S1 level and the T1 level (preferably 0.2 eV or less), and up-converts the triplet excited state to the singlet excited state with a small amount of thermal energy (intersystem crossing). It is a material that can efficiently exhibit light emission (fluorescence) from a singlet excited state.
  • the conditions under which thermal activated delayed fluorescence can be efficiently obtained are that the energy difference between the triplet excited energy level and the singlet excited energy level is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. That can be mentioned.
  • the delayed fluorescence in the TADF material means light emission having a spectrum similar to that of normal fluorescence but having a significantly long lifetime. Its life is 1 ⁇ 10-6 seconds or longer, preferably 1 ⁇ 10 -3 seconds or longer.
  • the TADF material examples include fullerene or a derivative thereof, an acridine derivative such as proflavine, eosin and the like.
  • metal-containing porphyrin containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd) and the like can be mentioned.
  • the metal-containing porphyrin include protoporphyrin-tin fluoride complex (abbreviation: SnF 2 (Proto IX)), mesoporphyrin-tin fluoride complex (abbreviation: SnF 2 (Meso IX)), and hematoporphyrin-tin fluoride.
  • a substance in which a ⁇ -electron-rich heteroaromatic ring and a ⁇ -electron-deficient heteroaromatic ring are directly bonded has a stronger donor property of the ⁇ -electron-rich heteroaromatic ring and a stronger acceptor property of the ⁇ -electron-deficient heteroaromatic ring. , It is particularly preferable because the energy difference between the single-term excited state and the triple-term excited state becomes small.
  • examples of the material having a function of converting triplet excitation energy into light emission include nanostructures of transition metal compounds having a perovskite structure.
  • nanostructures of metal halogen perovskites are preferable.
  • nanoparticles and nanorods are preferable.
  • the organic compound (host material or the like) used in combination with the above-mentioned light emitting substance (guest material) has an energy gap larger than the energy gap of the light emitting substance (guest material).
  • One or more kinds of substances may be selected and used.
  • the luminescent material used for the light emitting layer is a fluorescent luminescent material
  • the energy level of the singlet excited state is large and the energy level of the triplet excited state is large as the organic compound (host material) to be combined.
  • the organic compound (host material) includes anthracene derivative, tetracene derivative, phenanthrene derivative, pyrene derivative, chrysene derivative, and the like. Examples thereof include condensed polycyclic aromatic compounds such as dibenzo [g, p] chrysene derivatives.
  • organic compound (host material) preferably used in combination with a fluorescent luminescent substance examples include 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviated as abbreviated).
  • PCzPA 3,6-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole
  • DPCzPA 3,6-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole
  • PCPN 9,10-diphenylanthracene
  • DPAnth N, N-diphenyl-9- [4- (10-phenyl-9-anthril) phenyl] -9H- Carbazole-3-amine
  • CzA1PA 4- (10-phenyl-9-anthril) triphenylamine
  • DPhPA YGAPA, PCAPA, N, 9-diphenyl-N- ⁇ 4- [4- (4) 10-Phenyl-9-anthryl) phenyl] phenyl ⁇ -9H-carbazole
  • the luminescent substance used for the light emitting layer is a phosphorescent luminescent substance
  • the tripled excitation energy (basic state and tripled excited state) of the luminescent substance is used as the organic compound (host material) to be combined.
  • An organic compound having a larger triplet excitation energy than the energy difference) may be selected.
  • a plurality of organic compounds for example, a first host material and a second host material (or an assist material)
  • these plurality of organic compounds are used in combination with a light emitting substance in order to form an excited complex. Is preferably used in combination with a phosphorescent substance.
  • ExTET Extra-Triplet Energy Transfer
  • a compound that easily forms an excitation complex is preferable, and a compound that easily receives holes (hole transporting material) and a compound that easily receives electrons (electron transporting material) are combined. Is particularly preferred.
  • the organic compounds include aromatic amines, carbazole derivatives, dibenzothiophene derivatives, and dibenzofurans. Examples thereof include derivatives, zinc and aluminum-based metal complexes, oxadiazole derivatives, triazole derivatives, benzoimidazole derivatives, quinoxalin derivatives, dibenzoquinoxalin derivatives, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenanthroline derivatives and the like.
  • specific examples of aromatic amines and carbazole derivatives which are organic compounds having high hole-transporting properties, include the same examples as those of the above-mentioned specific examples of hole-transporting materials. Are preferable as host materials.
  • dibenzothiophene derivative and the dibenzofuran derivative which are organic compounds having high hole transport properties
  • dibenzothiophene derivative and the dibenzofuran derivative which are organic compounds having high hole transport properties
  • -Il) phenyl] phenyl ⁇ dibenzofuran abbreviation: mmDBFFLBi-II
  • 4,4', 4''-(benzene-1,3,5-triyl) tri (dibenzofuran) abbreviation: DBF3P-II
  • DBT3P- II 2,8-diphenyl-4- [4- (9-phenyl-9H-fluoren-9-yl) phenyl] dibenzothiophene
  • DBTFLP-III 4- [4- (9-phenyl-9H-) Fluolene-9-yl) phenyl] -6-phenyldibenzothiophene
  • the metal complex which is an organic compound (electron transporting material) having high electron transport property tris (8-quinolinolat) aluminum (8-quinolinolat) aluminum which is a zinc or aluminum-based metal complex (8-quinolinolato) III) (abbreviation: Alq), tris (4-methyl-8-quinolinolat) aluminum (III) (abbreviation: Almq 3 ), bis (10-hydroxybenzo [h] quinolinato) berylium (II) (abbreviation: BeBq 2 ) , Bis (2-methyl-8-quinolinolat) (4-phenylphenorato) aluminum (III) (abbreviation: BAlq), bis (8-quinolinolato) zinc (II) (abbreviation: Znq), quinoline skeleton or benzo Examples thereof include metal complexes having a quinoline skeleton, all of which are preferable as host materials.
  • oxazole-based substances such as bis [2- (2-benzothazolyl) phenolato] zinc (II) (abbreviation: ZnPBO) and bis [2- (2-benzothiazolyl) phenolato] zinc (II) (abbreviation: ZnBTZ).
  • ZnPBO bis [2- (2-benzothazolyl) phenolato] zinc
  • ZnBTZ bis [2- (2-benzothiazolyl) phenolato] zinc
  • a metal complex having a thiazole-based ligand and the like are also mentioned as preferable host materials.
  • organic compounds having high electron-transporting properties, such as oxadiazole derivative, triazole derivative, benzoimidazole derivative, quinoxalin derivative, dibenzoquinoxalin derivative, phenylanthroline derivative and the like, include.
  • heterocyclic compound having a diazine skeleton the heterocyclic compound having a triazine skeleton, and the heterocyclic compound having a pyridine skeleton, which are organic compounds (electron transporting materials) having high electron transport properties, are shown as specific examples.
  • poly (2,5-pyridinediyl) (abbreviation: PPy)
  • poly [(9,9-dihexylfluorene-2,7-diyl) -co- (pyridine-3,5-diyl)] (abbreviation: PF) -Py)
  • poly [(9,9-dioctylfluorene-2,7-diyl) -co- (2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy)
  • PF-BPy poly [(9,9-dioctylfluorene-2,7-diyl) -co- (2,2'-bipyridine-6,6'-diyl)]
  • bipolar 9-phenyl-9'-(4-phenyl-2-quinazolinyl) -3,3'-bi which is an organic compound having a high hole transport property and also having a high electron transport property.
  • -9H-carbazol (abbreviation: PCCzQz) or the like can also be used as a host material.
  • the electron transport layer (114, 114a, 114b) emits electrons injected from the second electrode 102 or the charge generation layer (106, 106a, 106b) by the electron injection layer (115, 115a, 115b) described later. It is a layer to be transported to (113, 113a, 113b, 113c).
  • the electron transport layer (114, 114a, 114b) is a layer containing an electron transport material.
  • the electron-transporting material used for the electron-transporting layer (114, 114a, 114b) has an electron mobility of 1 ⁇ 10-6 cm 2 / Vs or more when the square root of the electric field strength [V / cm] is 600. The substance to have is preferable.
  • any substance other than these can be used as long as it is a substance having a higher electron transport property than holes.
  • the electron transport layer (114, 114a, 114b) can function as a single layer, the device characteristics can be improved by forming a laminated structure of two or more layers as needed.
  • Examples of the electron-transporting material that can be used for the electron-transporting layer (114, 114a, 114b) include an organic compound having a structure in which an aromatic ring is condensed with a furan ring of a frodiazine skeleton, a metal complex having a quinoline skeleton, and a benzoquinoline skeleton.
  • an organic compound having a structure in which an aromatic ring is condensed with a furan ring of a frodiazine skeleton a metal complex having a quinoline skeleton, and a benzoquinoline skeleton.
  • a metal complex having an oxazole skeleton a metal complex having an oxazole skeleton, a metal complex having a thiazole skeleton, etc.
  • Examples thereof include benzoquinoline derivatives, quinoxalin derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and heterocyclic compounds such as ⁇ -electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.
  • the electron-transporting material examples include 2- [3'-(dibenzothiophen-4-yl) biphenyl-3-yl] dibenzo [f, h] quinoxalin (abbreviation: 2mDBTBPDBq-II), 5- [.
  • oxadiazole derivatives such as PBD, OXD-7 and CO11
  • triazole derivatives such as TAZ and p-EtTAZ
  • imidazole derivatives such as TPBI and mDBTBIm-II (including benzoimidazole derivatives)
  • BzOs oxadiazole derivatives such as PBD, OXD-7 and CO11
  • triazole derivatives such as TAZ and p-EtTAZ
  • imidazole derivatives such as TPBI and mDBTBIm-II (including benzoimidazole derivatives)
  • BzOs such as Bphen, BCP, NBphen and the like, 2mDBTPDBq-II, 2mDBTBPDBq-II, 2mCzBPDBq, 2CzPDBq-III, 7mDBTPDBq-II, and 6mDBTPDBq-II and the like quinoxalin derivatives, or dibenzoquinoxalin derivatives, 35DC
  • a pyridine derivative such as TmPyPB, a pyrimidine derivative such as 4,6 mPnP2Pm, 4,6 mDBTP2Pm-II, and 4,6 mCzP2Pm, and a triazine derivative such as PCCzPTzhn and mPCCzPTzn-02 can be used as the electron transporting material.
  • poly (2,5-pyridinediyl) (abbreviation: PPy)
  • poly [(9,9-dihexylfluorene-2,7-diyl) -co- (pyridine-3,5-diyl)] (abbreviation: PF).
  • PPy poly [(9,9-dihexylfluorene-2,7-diyl) -co- (pyridine-3,5-diyl)]
  • PF-Py poly [(9,9-dioctylfluorene-2,7-diyl) -co- (2,2'-bipyridine-6,6'-diyl)]
  • PF-BPy A molecular compound can also be used as an electron transporting material.
  • the electron transport layer (114, 114a, 114b) is not limited to a single layer, but may have a structure in which two or more layers made of the above substances are laminated.
  • the electron injection layer (115, 115a, 115b) is a layer containing a substance having a high electron injection property. Further, the electron injection layer (115, 115a, 115b) is a layer for increasing the electron injection efficiency from the second electrode 102, and the value of the work function of the material used for the second electrode 102 and the electron injection. When compared with the LUMO level value of the material used for the layer (115, 115a, 115b), it is preferable to use a material having a small difference (0.5 eV or less).
  • Liq 2- (2-pyridyl) phenolatrithium
  • LiPPy 2- (2-pyridyl) -3-pyridinolatrithium
  • LiPPy 4-phenyl-2- (2-pyridyl) pheno Alkaline metals
  • LiPPP lithium oxide
  • rare earth metal compounds such as erbium fluoride (ErF 3 ) can be used.
  • electride may be used for the electron injection layer (115, 115a, 115b). Examples of the electride include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. In addition, the substance constituting the above-mentioned electron transport layer (114, 114a, 114b) can also be used.
  • a composite material obtained by mixing an organic compound and an electron donor (donor) may be used for the electron injection layer (115, 115a, 115b).
  • a composite material is excellent in electron injecting property and electron transporting property because electrons are generated in an organic compound by an electron donor.
  • the organic compound is preferably a material excellent in transporting generated electrons, and specifically, for example, an electron transporting material (metal complex) used for the above-mentioned electron transport layer (114, 114a, 114b). , Or a heteroaromatic compound, etc.) can be used.
  • the electron donor may be any substance that exhibits electron donating property to the organic compound.
  • an alkali metal, an alkaline earth metal, or a rare earth metal is preferable, and examples thereof include lithium, cesium, magnesium, calcium, erbium, and ytterbium.
  • alkali metal oxides or alkaline earth metal oxides are preferable, and lithium oxides, calcium oxides, barium oxides and the like can be mentioned.
  • a Lewis base such as magnesium oxide.
  • an organic compound such as tetrathiafulvalene (abbreviation: TTF) can also be used.
  • a composite material obtained by mixing an organic compound and a metal may be used for the electron injection layer (115, 115a, 115b).
  • the organic compound used here it is preferable that the LUMO (lowest unoccupied molecular orbital) level is -3.6 eV or more and -2.3 eV or less. Further, a material having an unshared electron pair is preferable.
  • a material having an unshared electron pair such as a pyridine skeleton, a diazine skeleton (pyrimidine or pyrazine), or a heterocyclic compound having a triazine skeleton is preferable.
  • heterocyclic compound having a pyridine skeleton examples include 3,5-bis [3- (9H-carbazole-9-yl) phenyl] pyridine (abbreviation: 35DCzPPy) and 1,3,5-tri [3- (3). -Pyridine) Phenyl] Benzene (abbreviation: TmPyPB), vasocuproin (abbreviation: BCP), 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), baso Examples thereof include phenanthroline (abbreviation: benzene).
  • heterocyclic compound having a diazine skeleton examples include 2- [3- (dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxalin (abbreviation: 2mDBTPDBq-II) and 2- [3'-(dibenzo).
  • heterocyclic compound having a triazine skeleton examples include 2- ⁇ 4- [3- (N-phenyl-9H-carbazole-3-yl) -9H-carbazole-9-yl] phenyl ⁇ -4,6-diphenyl. -1,3,5-triazine (abbreviation: PCCzPTzhn), 2,4,6-tris [3'-(pyridin-3-yl) biphenyl-3-yl] -1,3,5-triazine (abbreviation: TmPPPyTz) ), 2,4,6-tris (2-pyridyl) -1,3,5-triazine (abbreviation: 2Py3Tz) and the like.
  • PCCzPTzhn 2,4,6-tris [3'-(pyridin-3-yl) biphenyl-3-yl] -1,3,5-triazine
  • TmPPPyTz 2,4,6-tris (2-pyri
  • the metal it is preferable to use a material belonging to Group 5, Group 7, Group 9, Group 11 or Group 13 in the periodic table, and examples thereof include Ag, Cu, Al, and In. Be done.
  • the organic compound forms a semi-occupied orbital (SOMO: Single Occupied Molecular Orbital) with the metal.
  • SOMO Single Occupied Molecular Orbital
  • the optical distance between the second electrode 102 and the light emitting layer 113b is less than 1/4 of the wavelength ⁇ of the light exhibited by the light emitting layer 113b. It is preferable to form the above. In this case, it can be adjusted by changing the film thickness of the electron transport layer 114b or the electron injection layer 115b.
  • a plurality of EL layers are laminated between the pair of electrodes (tandem structure). Also called).
  • the charge generation layer 106 injects electrons into the EL layer 103a and causes holes in the EL layer 103b. Has the function of injecting. Even if the charge generation layer 106 has a structure in which an electron acceptor (acceptor) is added to the hole transporting material (also referred to as a P-type layer), an electron donor is added to the electron transporting material. It may have a configured structure (also referred to as an electron injection buffer layer). Further, both of these configurations may be laminated. Further, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer.
  • the hole transporting material is the material shown in the present embodiment.
  • the electron acceptor include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4 - TCNQ), chloranil and the like.
  • the oxides of metals belonging to Group 4 to Group 8 in the Periodic Table of the Elements can be mentioned. Specific examples thereof include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and renium oxide.
  • the acceptor material described above may be used. Further, in the P-type layer, even if a mixed membrane made by mixing a hole transporting material and an electron acceptor is used, a single membrane containing a hole transporting material and a single membrane containing an electron acceptor are laminated. You may use it.
  • the material shown in the present embodiment may be used as the electron transporting material.
  • the electron donor an alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to Group 2 or Group 13 in the Periodic Table of the Elements, an oxide thereof, or a carbonate can be used.
  • lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), itterbium (Yb), indium (In), lithium oxide (Li 2 O), cesium carbonate and the like can be used.
  • an organic compound such as tetrathianaphthalene may be used as an electron donor.
  • the electron relay layer When the electron relay layer is provided between the P-type layer and the electron injection buffer layer in the charge generation layer 106, the electron relay layer contains at least a substance having electron transportability, and the electron injection buffer layer and the P-type layer interact with each other. It has the function of preventing the action and smoothly transferring electrons.
  • the LUMO level of the electron-transporting substance contained in the electron relay layer is the LUMO level of the acceptor substance in the P-type layer and the electron-transporting substance contained in the electron-transporting layer in contact with the charge generation layer 106. It is preferably between the LUMO level.
  • the specific energy level of the LUMO level in the electron-transporting substance used for the electron relay layer is preferably ⁇ 5.0 eV or higher, preferably ⁇ 5.0 eV or higher and ⁇ 3.0 eV or lower.
  • the substance having electron transporting property used for the electron relay layer it is preferable to use a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand.
  • FIG. 2D shows a configuration in which two EL layers 103 are laminated
  • a stacked structure of three or more EL layers may be formed by providing a charge generation layer between different EL layers.
  • the light emitting device shown in this embodiment can be formed on various substrates.
  • the type of substrate is not limited to a specific one.
  • substrates include semiconductor substrates (eg single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates with stainless still foils, tungsten substrates, etc.
  • substrates include a substrate having a tungsten foil, a flexible substrate, a laminated film, paper containing a fibrous material, or a substrate film.
  • the glass substrate examples include barium borosilicate glass, aluminoborosilicate glass, and soda lime glass.
  • a flexible substrate a laminated film, a base film, etc., synthesis of plastics, acrylics and the like represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sulfone (PES).
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PES polyether sulfone
  • resins polypropylene, polyesters, polyvinyl chlorides, or polyvinyl chlorides, polyamides, polyimides, aramids, epoxys, inorganic vapor-deposited films, and papers.
  • a vacuum process such as a vapor deposition method or a solution process such as a spin coating method and an inkjet method can be used to fabricate the light emitting device shown in the present embodiment.
  • a physical vapor deposition method such as a sputtering method, an ion plating method, an ion beam vapor deposition method, a molecular beam vapor deposition method, or a vacuum vapor deposition method, or a chemical vapor deposition method (CVD method) is used.
  • PVD method physical vapor deposition method
  • CVD method chemical vapor deposition method
  • the functional layer (hole injection layer (111, 111a, 111b), hole transport layer (112, 112a, 112b), light emitting layer (113, 113a, 113b, 113c), electron transport included in the EL layer of the light emitting device).
  • a high molecular weight compound oligomer, dendrimer, polymer, etc.
  • a medium molecular weight compound compound in the intermediate region between low molecular weight and high molecular weight: molecular weight 400 to 4000
  • Inorganic compounds quantum dot materials, etc.
  • the quantum dot material a colloidal quantum dot material, an alloy type quantum dot material, a core / shell type quantum dot material, a core type quantum dot material, or the like can be used.
  • Each functional layer (hole injection layer (111, 111a, 111b), hole transport layer (112, 112a, 112b) constituting the EL layer (103, 103a, 103b, 103c) of the light emitting device shown in the present embodiment).
  • Light emitting layers (113, 113a, 113b, 113c), electron transport layers (114, 114a, 114b), electron injection layers (115, 115a, 115b)), or charge generation layers (106, 106a, 106b).
  • the material is not limited to the materials shown in the embodiments, and other materials can be used in combination as long as they can satisfy the functions of each layer.
  • the light emitting device 700 shown in FIG. 3A has a light emitting device 550B, a light emitting device 550G, a light emitting device 550R, and a partition wall 528. Further, the light emitting device 550B, the light emitting device 550G, the light emitting device 550R, and the partition wall 528 are formed on the functional layer 520 provided on the first substrate 510.
  • the functional layer 520 includes a drive circuit GD composed of a plurality of transistors, a drive circuit SD, a pixel circuit, and the like, as well as wiring for electrically connecting these.
  • these drive circuits are electrically connected to the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R, respectively, and can drive them.
  • the light emitting device 700 includes an insulating layer 705 on the functional layer 520 and each light emitting device, and the insulating layer 705 has a function of bonding the second substrate 770 and the functional layer 520.
  • the configuration in which the partition wall 528 is provided is illustrated, but the present invention is not limited to this.
  • the partition wall 528 may not be provided.
  • the drive circuit GD and the drive circuit SD will be described later in the third embodiment.
  • the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R have the device structure shown in the first embodiment. In particular, the case where the EL layer 103 in the structure shown in FIG. 2A is different for each light emitting device is shown.
  • the light emitting device 550B has an electrode 551B, an electrode 552, an EL layer 103B, an oxidation resistant layer 105B, and a block layer 107.
  • the specific configuration of each layer is as shown in the first embodiment.
  • the EL layer 103B has a laminated structure including a plurality of layers having different functions including the light emitting layer 113B.
  • the oxidation resistant layer 105B is included in the EL layer 103B.
  • FIG. 3A among the layers included in the EL layer 103B including the light emitting layer 113B, only the electron injection / transport layer 104B and the oxidation resistant layer 105B are shown, but the present invention is not limited to this.
  • the electron injection / transport layer 104B indicates a layer having the functions of the electron injection layer and the electron transport layer shown in the first embodiment, and may have a laminated structure. In the present specification, it is assumed that the electron injection / transport layer can be read as described above in any light emitting device. Further, the hole injection / transport layer is also a layer having the functions of the hole injection layer and the hole transport layer, and may have a laminated structure.
  • the block layer 107 is formed so as to cover the EL layer 103B formed on the electrode 551B.
  • the EL layer 103B has a side surface (or an end portion). Therefore, the block layer 107 is formed in contact with the side surface (or end portion) of the EL layer 103B. As a result, it is possible to suppress the invasion of oxygen and water or their constituent elements from the side surface of the EL layer 103B to the inside.
  • the electron transporting material shown in the first embodiment can be used for the block layer 107.
  • the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed by using an electron transporting material, it can be regarded as a part of the EL layer 103B.
  • the electrode 552 is formed on the block layer 107.
  • the electrode 551B and the electrode 552 have a region overlapping with each other.
  • the EL layer 103B is provided between the electrode 551B and the electrode 552. Therefore, the electrode 552 has a structure in which the electrode 552 is in contact with the side surface (or end portion) of the EL layer 103B via the block layer 107. This makes it possible to prevent the EL layer 103B and the electrode 552, more specifically, the electron injection / transport layer 104B and the electrode 552 of the EL layer 103B from being electrically short-circuited. Therefore, it is preferable that the block layer 107 has at least a layer having a high electric resistance.
  • the block layer 107 is provided between the electrode 551B and the EL layer 103B, it is more preferable to have at least a layer having a low electrical resistance. Therefore, the first block layer 107-1 in contact with the EL layer 103B is a layer having high electrical resistance made of only an electron transporting material, and the second block layer 107-2 in contact with the electrode 552 is a metal ion in the electron transporting material. It is preferable to form a layer having a low electrical resistance, which is doped with the above, and to have a laminated structure having at least the first block layer 107-1 and the second block layer 107-2.
  • a metal ion or the like is placed in an electron transporting material in a film. It is more preferable to provide a layer having a low electrical resistance, which is doped with.
  • the EL layer 103B shown in FIG. 3A has the same configuration as the EL layers 103, 103a, 103b, 103c described in the first embodiment. Further, the EL layer 103B can emit blue light, for example.
  • the light emitting device 550G has an electrode 551G, an electrode 552, an EL layer 103G, an oxidation resistant layer 105G, and a block layer 107.
  • the specific configuration of each layer is as shown in the first embodiment.
  • the EL layer 103G has a laminated structure including a plurality of layers having different functions including the light emitting layer 113G.
  • the oxidation resistant layer 105G is included in the EL layer 103G.
  • FIG. 3A among the layers included in the EL layer 103G including the light emitting layer 113G, only the electron injection / transport layer 104G and the oxidation resistant layer 105G are shown, but the present invention is not limited to this.
  • the electron injection / transport layer 104G indicates a layer having the functions of the electron injection layer and the electron transport layer shown in the first embodiment, and may have a laminated structure.
  • the block layer 107 is formed so as to cover the EL layer 103G formed on the electrode 551G.
  • the EL layer 103G has a side surface (or an end portion). Therefore, the block layer 107 is also formed in contact with the side surface (or end portion) of the EL layer 103G. This makes it possible to suppress the invasion of oxygen and water or their constituent elements from the side surface of the EL layer 103G into the inside.
  • the electron transporting material shown in the first embodiment can be used for the block layer 107.
  • the electrode 552 is formed on the block layer 107.
  • the electrode 551G and the electrode 552 have a region overlapping with each other.
  • the EL layer 103G is provided between the electrode 551G and the electrode 552. Therefore, the electrode 552 has a structure in contact with the side surface of the EL layer 103G via the block layer 107. This makes it possible to prevent the EL layer 103G and the electrode 552, more specifically, the electron injection / transport layer 104G and the electrode 552 of the EL layer 103G from being electrically short-circuited.
  • the EL layer 103G shown in FIG. 3A has the same configuration as the EL layers 103, 103a, 103b, 103c described in the first embodiment. Further, the EL layer 103G can emit green light, for example.
  • the light emitting device 550R has an electrode 551R, an electrode 552, an EL layer 103R, an oxidation resistant layer 105R, and a block layer 107.
  • the specific configuration of each layer is as shown in the first embodiment.
  • the EL layer 103R has a laminated structure including a plurality of layers having different functions including the light emitting layer 113R.
  • the oxidation resistant layer 105R is included in the EL layer 103R.
  • FIG. 3A among the layers included in the EL layer 103R including the light emitting layer 113R, only the electron injection / transport layer 104R and the oxidation resistant layer 105R are shown, but the present invention is not limited to this.
  • the electron injection / transport layer 104R indicates a layer having the functions of the electron injection layer and the electron transport layer shown in the first embodiment, and may have a laminated structure.
  • the block layer 107 is formed so as to cover the EL layer 103R formed on the electrode 551R.
  • the EL layer 103R has a side surface (or an end portion). Therefore, the block layer 107 is also formed in contact with the side surface (or end portion) of the EL layer 103R. As a result, it is possible to suppress the invasion of oxygen and water or their constituent elements from the side surface of the EL layer 103R into the inside.
  • the electron transporting material shown in the first embodiment can be used for the block layer 107.
  • the electrode 552 is formed on the block layer 107.
  • the electrode 551R and the electrode 552 have a region overlapping with each other.
  • the EL layer 103R is provided between the electrode 551R and the electrode 552. Therefore, the electrode 552 has a structure in contact with the side surface of the EL layer 103R via the block layer 107. This makes it possible to prevent the EL layer 103R and the electrode 552, more specifically, the electron injection / transport layer 104R and the electrode 552 of the EL layer 103R from being electrically short-circuited.
  • the EL layer 103R shown in FIG. 3A has the same configuration as the EL layers 103, 103a, 103b, 103c described in the first embodiment. Further, the EL layer 103R can emit red light, for example.
  • the electron injection layer included in the electron transport region located between the cathode and the light emitting layer 113 often has high conductivity, so that it is formed as a layer common to adjacent light emitting devices. , May cause crosstalk. Therefore, by providing a gap 580 between each EL layer as shown in this configuration example, it is possible to suppress the occurrence of crosstalk that occurs between adjacent light emitting devices.
  • the partition wall 528 includes an opening 528B, an opening 528G, and an opening 528R.
  • the opening 528B overlaps with the electrode 551B
  • the opening 528G overlaps with the electrode 551G
  • the opening 528R overlaps with the electrode 551R.
  • the pattern is formed by the photolithography method in the separation processing of these EL layers (EL layer 103B, EL layer 103G, and EL layer 103R), a high-definition light emitting device (display panel) should be manufactured. Can be done. Further, the end portion (side surface of the laminated structure constituting the EL layer) processed by pattern formation by the photolithography method has a shape having substantially the same surface (or being located on substantially the same plane). At this time, the width of the gap 580 provided between the EL layers is preferably 5 ⁇ m or less, more preferably 1 ⁇ m or less.
  • the electron injection layer included in the electron transport region located between the cathode and the light emitting layer often has high conductivity, and therefore, when formed as a layer common to adjacent light emitting devices, a cross is used. May cause talk. Therefore, by separating and processing the EL layer by pattern formation by the photolithography method as shown in this configuration example, it is possible to suppress the occurrence of crosstalk generated between adjacent light emitting devices.
  • Example 1 of manufacturing method of light emitting device As shown in FIG. 4A, the electrode 551B, the electrode 551G, and the electrode 551R are formed.
  • a conductive film is formed on the functional layer 520 formed on the first substrate 510, and processed into a predetermined shape by using a photolithography method.
  • a sputtering method for the formation of the conductive film, a sputtering method, a chemical vapor deposition (CVD) method, a vacuum vapor deposition method, a pulsed laser deposition (PLD) method, and an atomic layer deposition (ALD) method are used.
  • CVD method include a plasma chemical vapor deposition (PECVD: Plasma Enhanced CVD) method and a thermal CVD method.
  • PECVD Plasma vapor deposition
  • thermal CVD there is an organometallic chemical vapor deposition (MOCVD: Metalorganic CVD) method.
  • MOCVD Metalorganic CVD
  • an island-shaped thin film may be directly formed by a film forming method using a shielding mask such as a metal mask.
  • the island shape refers to a state in which the layers formed in the same process and using the same material are separated from each other in a plan view.
  • a photolithography method there are typically the following two methods.
  • One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching or the like, and removing the resist mask.
  • the other is a method in which a photosensitive thin film is formed, and then exposed and developed to process the thin film into a desired shape.
  • the light used for exposure for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof can be used.
  • ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
  • the exposure may be performed by the immersion exposure technique.
  • extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays may be used.
  • an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays or an electron beam because extremely fine processing is possible.
  • extreme ultraviolet light, X-rays or an electron beam because extremely fine processing is possible.
  • a dry etching method, a wet etching method, a sandblasting method, or the like can be used for etching the thin film using the resist mask.
  • a partition wall 528 is formed between the electrode 551B and the electrode 551G.
  • the partition 528 is formed by forming an insulating film covering the electrode 551B, the electrode 551G, and the electrode 551R, forming an opening by using a photolithography method, and exposing a part of the electrode 551B, the electrode 551G, and the electrode 551R.
  • the material that can be used for the partition wall 528 include an inorganic material, an organic material, or a composite material of an inorganic material and an organic material.
  • it includes an inorganic oxide film, an inorganic nitride film, an inorganic nitride film, or the like, or a laminated material obtained by laminating a plurality of films selected from these, more specifically, a silicon oxide film, acrylic, and the like.
  • a film or a film containing a polyimide, or a laminated material obtained by laminating a plurality of films selected from these can be used.
  • the EL layer 103B is formed on the electrode 551B, the electrode 551G, the electrode 551R, and the partition wall 528.
  • the EL layer 103B includes a light emitting layer 113B, an electron injection / transport layer 104B, and an oxidation resistant layer 105B.
  • a vacuum vapor deposition method is used to form the EL layer 103B so as to cover the electrode 551B, the electrode 551G, the electrode 551R, and the partition wall 528.
  • the oxidation-resistant layer 105B is formed by using an oxidation-resistant material.
  • an oxidation-resistant material Specifically, in the first embodiment, a composite in which an electron acceptor material is added to a hole transporting material which is an organic compound, which is mentioned as a material that can be used for the charge generation layer of the EL layer. A material or a laminated structure of a hole transporting material and an electron acceptor material can be used. Further, as the electron acceptor material, the material mentioned as the organic acceptor material used for the hole injection layer in the first embodiment can be used. Oxidation resistance can be improved by using a metal oxide as an electron acceptor material.
  • the metal oxide examples include oxides of metals belonging to Group 4 to Group 8 in the Periodic Table of the Elements. Specific examples thereof include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and renium oxide. Further, as the organic compound, a material listed as a hole transporting material can be used.
  • the oxidation-resistant layer 105B becomes formed when a resist is formed on the oxidation-resistant layer 105B in the subsequent steps. Elution can be suppressed.
  • the composition of the metal oxide and the organic compound used in the oxidation-resistant layer 105B is the weight of the organic compound with respect to the weight of the metal oxide in consideration of the film thickness and the transmittance of the oxidation-resistant layer 105B. Is preferably 1/100 to 100 times, more preferably 1/20 to 20 times.
  • the EL layer 103B on the electrode 551B is processed into a predetermined shape.
  • a resist is formed using a photolithography method, and the EL layer 103G on the electrode 551G and the EL layer 103R on the electrode 551R are removed by etching to have a shape having a side surface (or the side surface is exposed) or intersecting with a paper surface. It is processed into a strip-shaped shape that extends in the direction of etching. Specifically, dry etching is performed using the resist REG formed on the EL layer 103B overlapping the electrode 551B (see FIG. 5B).
  • the partition wall 528 can be used as an etching stopper.
  • each EL layer is patterned by a photolithography method
  • a known method may be applied. That is, a known resist material suitable for an organic material may be used, and specific examples thereof include a resist material that dissolves in an aqueous solvent.
  • the EL layer 103G (light emitting layer 113G, electron injection / transport layer 104G, and oxidation resistance) are placed on the resist REG, the electrode 551G, the electrode 551R, and the partition wall 528.
  • Layer 105G is included.).
  • a vacuum vapor deposition method is used to form the EL layer 103G so as to cover the electrode 551G, the electrode 551R, and the partition wall 528.
  • the oxidation-resistant layer 105G is formed by using a composite material containing a metal oxide and an organic compound (hole transporting material), similarly to the oxidation-resistant layer 105B.
  • the EL layer 103G on the electrode 551G is processed into a predetermined shape.
  • a resist is formed on the EL layer 103G by a photolithography method, and the EL layer 103G on the electrode 551B and the EL layer 103G on the electrode 551R are removed by etching to have a side surface (or the side surface is exposed).
  • the partition wall 528 can be used as an etching stopper.
  • the EL layer 103R (light emitting layer 113R, electron injection / transport layer 104R) is placed on the resist REG, the electrode 551R, and the partition wall 528.
  • an oxidation resistant layer 105R For example, a vacuum vapor deposition method is used to form the EL layer 103R so as to cover the electrode 551R, the resist REG, and the partition wall 528.
  • the oxidation-resistant layer 105R is formed by using a composite material containing a metal oxide and an organic compound (hole transporting material), similarly to the oxidation-resistant layer 105B.
  • the EL layer 103R on the electrode 551R is processed into a predetermined shape.
  • a shape having a side surface (or the side surface is exposed) by forming a resist on the EL layer 103R using a photolithography method and removing the EL layer 103R on the electrode 551B and the EL layer 103R on the electrode 551G.
  • it is processed into a strip shape extending in the direction intersecting the paper surface. Specifically, dry etching is performed using the resist REG formed on the EL layer 103R that overlaps with the electrode 551R.
  • the partition wall 528 can be used as an etching stopper.
  • the hole injection / transport layer 104B, the light emitting layer 113B, and the electron transport layer 108B are first formed on the electrode 551B.
  • the hole injection / transport layer 104G, the light emitting layer 113G, and the electron transport layer 108G are formed on the electrode 551G
  • the hole injection / transport layer 104R, the light emitting layer 113R, and the electron transport are formed on the electrode 551R. It is preferable to form the layer 108R.
  • the hole injection / transport layer 104B, the light emitting layer 113B, and the electron transport layer 108B on the electrode 551G and the hole injection / transport layer 104B, the light emitting layer 113B, and the electron transport layer 108B on the electrode 551R are removed by etching.
  • the surfaces of the electrode 551G and the electrode 551R are exposed to the etching gas.
  • the hole injection / transport layer 104G, the light emitting layer 113G, and the electron transport layer 108G on the electrode 551R are removed by etching, the surface of the electrode 551 is exposed to the etching gas. Therefore, the surface of the electrode 551B is not exposed to the etching gas, but the surface of the electrode 551G is exposed to the etching gas once, and the surface of the electrode 551R is exposed to the etching gas twice.
  • Exposure of the surface of the electrode to the etching gas may cause damage to the surface of the electrode. Further, by forming a light emitting device using an electrode having a damaged surface, the characteristics of the light emitting device may be deteriorated. The degree to which the surface condition of the electrode affects the characteristics of the light emitting device depends on the structure of the light emitting device, the material used, and the like. Comparing the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R, the light emitting device 550B may be most affected by the surface state of the electrode.
  • the surface of the electrode 551B can be prevented from being exposed to the etching gas, and the surface state of the electrode can be prevented. Can prevent deterioration of the characteristics of the light emitting device 550B, which is most susceptible to the above.
  • the block layer 107 is formed on the oxidation-resistant layer 105B, the oxidation-resistant layer 105G, the oxidation-resistant layer 105R, and the partition wall 528.
  • a vacuum vapor deposition method is used to form the block layer 107 so as to cover the oxidation resistant layer 105B, the oxidation resistant layer 105G, the oxidation resistant layer 105R, and the partition wall 528.
  • the block layer 107 is formed in contact with the side surface of each EL layer (103B, 103G, 103R) as shown in FIG. 7A.
  • the electron transporting material shown in the first embodiment can be used for the block layer 107.
  • the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed by using an electron transporting material, it can be regarded as a part of the EL layer 103B.
  • an electrode 552 is formed on the block layer 107.
  • the electrode 552 is formed, for example, by using a vacuum vapor deposition method.
  • the electrode 552 has a structure in which the electrode 552 is in contact with the side surface of each EL layer (103B, 103G, 103R) via the block layer 107.
  • the first block layer 107-1 in contact with the EL layer is a layer made of only an electron transporting material and having a high electric resistance, and is an electrode.
  • the second block layer 107-2 in contact with the electron-transporting material is a layer having a low electrical resistance, which is formed by doping an electron-transporting material with metal ions or the like, and these first block layer 107-1 and second block layer. It is preferable to have a laminated structure having at least 107-2.
  • the EL layer 103B, the EL layer 103G, and the EL layer 103R in the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R can be separated and processed, respectively.
  • the pattern is formed by the photolithography method in the separation processing of these EL layers (EL layer 103B, EL layer 103G, and EL layer 103R), a high-definition light emitting device (display panel) should be manufactured. Can be done. Further, the end portion (side surface of the laminated structure constituting the EL layer) processed by pattern formation by the photolithography method has a shape having substantially the same surface (or being located on substantially the same plane).
  • the electron injection layer included in the electron transport region located between the cathode and the light emitting layer often has high conductivity, and therefore, when formed as a layer common to adjacent light emitting devices, a cross is used. May cause talk. Therefore, by separating and processing the EL layer by pattern formation by the photolithography method as shown in this configuration example, it is possible to suppress the occurrence of crosstalk generated between adjacent light emitting devices.
  • a device manufactured by using a metal mask or an FMM may be referred to as a device having an MM (metal mask) structure.
  • a device that does not use a metal mask or FMM may be referred to as a device having an MML (metal maskless) structure.
  • SBS Side
  • a light emitting device capable of emitting white light may be referred to as a white light emitting device.
  • the white light emitting device can be combined with a colored layer (for example, a color filter) to realize a light emitting device having a full color display.
  • the light emitting device can be roughly classified into a single structure and a tandem structure.
  • a device having a single structure preferably has one EL layer between a pair of electrodes, and the EL layer preferably includes one or more light emitting layers.
  • a light emitting layer may be selected so that the light emission of each of the two or more light emitting layers has a complementary color relationship. For example, by making the emission color of the first light emitting layer and the emission color of the second light emitting layer have a complementary color relationship, it is possible to obtain a configuration in which the entire light emitting device emits white light. The same applies to a light emitting device having three or more light emitting layers.
  • the device having a tandem structure preferably has two or more EL layers between a pair of electrodes, and each EL layer preferably includes one or more light emitting layers.
  • each EL layer preferably includes one or more light emitting layers.
  • the light emitted from the light emitting layers of the plurality of EL layers may be combined to obtain white light emission.
  • the configuration for obtaining white light emission is the same as the configuration for a single structure.
  • the SBS structure light emitting device can have lower power consumption than the white light emitting device.
  • the white light emitting device is suitable because the manufacturing process is simpler than that of the light emitting device having an SBS structure, so that the manufacturing cost can be lowered or the manufacturing yield can be increased.
  • the light emitting device 700 shown in FIG. 8 has a light emitting device 550B, a light emitting device 550G, a light emitting device 550R, and a partition wall 528. Further, the light emitting device 550B, the light emitting device 550G, the light emitting device 550R, and the partition wall 528 are formed on the functional layer 520 provided on the first substrate 510.
  • the functional layer 520 includes a drive circuit GD composed of a plurality of transistors, a drive circuit SD, and the like, as well as wiring for electrically connecting these. It should be noted that these drive circuits are electrically connected to the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R, respectively, and can drive them.
  • the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R have the device structure shown in the first embodiment. In particular, the case where the EL layer 103 in the structure shown in FIG. 2A is different for each light emitting device is shown.
  • each light emitting device shown in FIG. 8 is the same as that of the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R described with reference to FIG.
  • each light emitting device for example, between the light emitting device 550B and the light emitting device 550G. Therefore, it has a structure that forms an insulating layer 540 in this gap 580.
  • the EL layer 103B (including the hole injection / transport layer 104B and the oxidation resistant layer 105B) and the EL layer 103G (hole injection / transport layer 104G, and the oxidation resistant layer 105G) are formed by pattern formation by a photolithography method. Included) and EL layer 103R (including hole injection / transport layer 104R and oxidation resistant layer 105R) are separated and formed, and then an insulating layer is formed in the gap 580 on the partition wall 528 by pattern formation by a photolithography method. 540 can be formed. Further, the electrode 552 can be formed on the EL layer (103B, 103G, 103R) and the insulating layer 540.
  • each EL layer (EL layer 103B, EL layer 103G, and EL layer 103R) having this configuration is patterned by a photolithography method in the separation processing, the end portion (EL) of the processed EL layer is formed.
  • the side surfaces of the laminated structure constituting the layer have substantially the same surface (or are located on substantially the same plane).
  • the hole injection layer contained in the hole transport region located between the anode and the light emitting layer often has high conductivity, so that it is formed as a layer common to adjacent light emitting devices. , May cause crosstalk. Therefore, by separating and processing the EL layer by pattern formation by the photolithography method as shown in this configuration example, it is possible to suppress the occurrence of crosstalk generated between adjacent light emitting devices.
  • the light emitting device 700 shown in FIG. 9A has a light emitting device 550B, a light emitting device 550G, a light emitting device 550R, and a partition wall 528. Further, the light emitting device 550B, the light emitting device 550G, the light emitting device 550R, and the partition wall 528 are formed on the functional layer 520 provided on the first substrate 510.
  • the functional layer 520 includes a drive circuit GD composed of a plurality of transistors, a drive circuit SD, and the like, as well as wiring for electrically connecting these. These drive circuits are electrically connected to the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R, and can drive them.
  • the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R have the device structure shown in the first embodiment.
  • the light emitting device 550B has an electrode 551B, an electrode 552, an EL layer (103P, 103Q), a charge generation layer 106B, an oxidation resistant layer 105B, and a block layer 107, and has a laminated structure shown in FIG. 9A.
  • the specific configuration of each layer is as shown in the first embodiment. Further, the electrode 551B and the electrode 552 overlap each other. Further, the EL layer 103P and the EL layer 103Q are laminated with the charge generation layer 106B interposed therebetween, and have the EL layer 103P, the EL layer 103Q, and the charge generation layer 106B between the electrodes 551B and the electrodes 552.
  • the EL layers 103P and 103Q have a laminated structure composed of a plurality of layers having different functions including a light emitting layer (113P, 113Q), similarly to the EL layers 103, 103a, 103b and 103c described in the first embodiment. .. Further, the EL layer 103P can emit blue light, for example, and the EL layer 103Q can emit yellow light, for example.
  • a light emitting layer 113P, 113Q
  • FIG. 9A only the light emitting layer 113P and the electron injection / transport layer 104P are shown among the layers included in the EL layer 103P, and among the layers included in the EL layer 103Q, the light emitting layer 113Q and the electron injection / transport layer 104Q are shown. And only the oxidation resistant layer 105Q is shown. Therefore, in the following, when the layer included in each EL layer can be described, the EL layer (EL layer 103P, EL layer 103Q) will be used for convenience.
  • the block layer 107 is formed so as to cover the EL layer 103P, the EL layer 103Q, and the charge generation layer 106B formed on the electrode 551B.
  • the EL layer 103P, the EL layer 103Q, and the charge generation layer 106B have side surfaces (or ends). Therefore, the block layer 107 is formed in contact with the side surfaces (or ends) of the EL layer 103P, the EL layer 103Q, and the charge generation layer 106B. Thereby, it is possible to suppress the invasion of oxygen and moisture or their constituent elements from the side surfaces of the EL layer 103P, the EL layer 103Q, and the charge generation layer 106B, respectively.
  • the electron transporting material shown in the first embodiment can be used for the block layer 107.
  • the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed by using an electron transporting material, it can be regarded as a part of the EL layer 103B.
  • the electrode 552 is formed on the block layer 107.
  • the electrode 551B and the electrode 552 overlap each other.
  • an EL layer 103P, an EL layer 103Q, and a charge generation layer 106B are provided between the electrode 551B and the electrode 552. Therefore, the electrode 552 has a structure in which the electrode 552 is in contact with the side surface (or end portion) of the EL layer 103P, the EL layer 103Q, and the charge generation layer 106B via the block layer 107.
  • the EL layer 103P and the electrode 552 more specifically, the electron injection / transport layer 104P and the electrode 552, the EL layer 103Q and the electrode 552, and more specifically, the EL layer 103Q have.
  • the electron injection / transport layer 104Q and the electrode 552, or the charge generation layer 106B and the electrode 552 can be prevented from being electrically short-circuited.
  • the first block layer 107-1 in contact with the EL layer is a layer made of only an electron transporting material and having a high electric resistance, and is an electrode.
  • the second block layer 107-2 in contact with the electron-transporting material is a layer having a low electrical resistance, which is formed by doping an electron-transporting material with metal ions or the like, and these first block layer 107-1 and second block layer. It is preferable to have a laminated structure having at least 107-2.
  • the light emitting device 550G has an electrode 551G, an electrode 552, an EL layer (103P, 103Q (including an oxidation resistant layer 105Q)), a charge generation layer 106G, an oxidation resistant layer 105G, and a block layer 107, and is laminated as shown in FIG. 9A.
  • the electrode 551G and the electrode 552 overlap each other.
  • the EL layer 103P and the EL layer 103Q are laminated with the charge generation layer 106G interposed therebetween, and have the EL layer 103P, the EL layer 103Q, and the charge generation layer 106G between the electrode 551G and the electrode 552.
  • the block layer 107 is formed so as to cover the EL layer 103P, the EL layer 103Q, and the charge generation layer 106G formed on the electrode 551G.
  • the EL layer 103P, the EL layer 103Q, and the charge generation layer 106G have side surfaces (or ends). Therefore, the block layer 107 is formed in contact with the side surfaces (or ends) of the EL layer 103P, the EL layer 103Q, and the charge generation layer 106G. Thereby, it is possible to suppress the invasion of oxygen and moisture or their constituent elements from the side surfaces of the EL layer 103P, the EL layer 103Q, and the charge generation layer 106G, respectively.
  • the electron transporting material shown in the first embodiment can be used for the block layer 107.
  • the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed by using an electron transporting material, it can be regarded as a part of the EL layer 103B.
  • the electrode 552 is formed on the block layer 107.
  • the electrode 551G and the electrode 552 overlap each other.
  • an EL layer 103P, an EL layer 103Q, and a charge generation layer 106G are provided between the electrode 551G and the electrode 552. Therefore, the electrode 552 has a structure in which the electrode 552 is in contact with the side surface (or end portion) of the EL layer 103P, the EL layer 103Q, and the charge generation layer 106G via the block layer 107.
  • the EL layer 103P and the electrode 552 more specifically, the electron injection / transport layer 104P and the electrode 552, the EL layer 103Q and the electrode 552, and more specifically, the EL layer 103Q have.
  • the electron injection / transport layer 104Q and the electrode 552, or the charge generation layer 106G and the electrode 552 can be prevented from being electrically short-circuited.
  • the first block layer 107-1 in contact with the EL layer is a layer made of only an electron transporting material and having a high electric resistance, and is an electrode.
  • the second block layer 107-2 in contact with the electron-transporting material is a layer having a low electrical resistance, which is formed by doping an electron-transporting material with metal ions or the like, and these first block layer 107-1 and second block layer. It is preferable to have a laminated structure having at least 107-2.
  • the light emitting device 550R has an electrode 551R, an electrode 552, an EL layer (103P, 103Q), a charge generation layer 106R, an oxidation resistant layer 105R, and a block layer 107, and has a laminated structure shown in FIG. 9A.
  • the specific configuration of each layer is as shown in the first embodiment. Further, the electrode 551R and the electrode 552 overlap each other. Further, the EL layer 103P and the EL layer 103Q are laminated with the charge generation layer 106R interposed therebetween, and have the EL layer 103P, the EL layer 103Q, and the charge generation layer 106R between the electrode 551R and the electrode 552.
  • the block layer 107 is formed so as to cover the EL layer 103P, the EL layer 103Q, and the charge generation layer 106R, which are formed on the electrode 551R.
  • the EL layer 103P, the EL layer 103Q, and the charge generation layer 106R have side surfaces (or ends). Therefore, the block layer 107 is formed in contact with the side surfaces (or ends) of the EL layer 103P, the EL layer 103Q, and the charge generation layer 106R. Thereby, it is possible to suppress the invasion of oxygen and water or their constituent elements from the side surfaces of the EL layer 103P, the EL layer 103Q, and the charge generation layer 106R, respectively.
  • the electron transporting material shown in the first embodiment can be used for the block layer 107.
  • the block layer 107 is provided between the electrode 551B and the EL layer 103B and is formed by using an electron transporting material, it can be regarded as a part of the EL layer 103B.
  • the electrode 552 is formed on the block layer 107.
  • the electrode 551R and the electrode 552 overlap each other.
  • an EL layer (103P, 103Q) and a charge generation layer 106R are provided between the electrode 551R and the electrode 552.
  • the electrode 552 has a structure in which the electrode 552 is in contact with the EL layer (103P, 103Q) and the side surface (or end portion) of the charge generation layer 106R via the block layer 107.
  • the EL layer 103P and the electrode 552 more specifically, the electron injection / transport layer 104P and the electrode 552, the EL layer 103Q and the electrode 552, and more specifically, the EL layer 103Q have.
  • the electron injection / transport layer 104Q and the electrode 552, or the charge generation layer 106R and the electrode 552 can be prevented from being electrically short-circuited.
  • the first block layer 107-1 in contact with the EL layer is a layer made of only an electron transporting material and having a high electric resistance, and is an electrode.
  • the second block layer 107-2 in contact with the electron-transporting material is a layer having a low electrical resistance, which is formed by doping an electron-transporting material with metal ions or the like, and these first block layer 107-1 and the second block layer. It is preferable to have a laminated structure having at least 107-2.
  • the side surface of the laminated structure constituting the EL layer has a shape having substantially the same surface (or being located on substantially the same plane).
  • the second substrate 770 has a colored layer CFB, a colored layer CFG, and a colored layer CFR. As shown in FIG. 9A, these colored layers may be partially overlapped with each other. By providing a part in layers, the overlapped part can function as a light-shielding film.
  • a material that preferentially transmits blue light (B) is used for the colored layer CFB, and a material that preferentially transmits green light (G) is used for the colored layer CFG.
  • a material that preferentially transmits red light (R) is used for the colored layer CFR.
  • FIG. 9B shows the configuration of the light emitting device 550B when the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R are light emitting devices that emit white light.
  • the EL layer 103P and the EL layer 103Q are laminated on the electrode 551B with the charge generation layer 106B interposed therebetween. Further, the EL layer 103P has a light emitting layer 113B that emits, for example, a blue light EL (1) as a light emitting layer 113P, and the EL layer 103Q has, for example, a green light EL (2) as a light emitting layer 113Q. It has a light emitting layer 113G for emitting light and a light emitting layer 113R for emitting red light EL (3).
  • a color conversion layer can be used instead of the above-mentioned colored layer.
  • nanoparticles, quantum dots, and the like can be used for the color conversion layer.
  • a color conversion layer that converts blue light into green light can be used instead of the colored layer CFG. As a result, the blue light emitted by the light emitting device 550G can be converted into green light.
  • a color conversion layer that converts blue light into red light can be used instead of the colored layer CFR. As a result, the blue light emitted by the light emitting device 550R can be converted into red light.
  • the light emitting device (display panel) 700 shown in FIG. 10 has a light emitting device 550B, a light emitting device 550G, a light emitting device 550R, and a partition wall 528. Further, the light emitting device 550B, the light emitting device 550G, the light emitting device 550R, and the partition wall 528 are formed on the functional layer 520 provided on the first substrate 510.
  • the functional layer 520 includes a drive circuit GD composed of a plurality of transistors, a drive circuit SD, and the like, as well as wiring for electrically connecting these. These drive circuits are electrically connected to the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R, and can drive them.
  • the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R have the device structure shown in the first embodiment.
  • each light emitting device has an EL layer (103P, 103Q) having a structure shown in FIG. 2B, that is, a so-called tandem structure in common.
  • each light emitting device shown in FIG. 10 is the same as that of the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R described with reference to FIG. 9, and all of them emit white light.
  • the light emitting device shown in this configuration example is shown in FIG. 9 in that it has a colored layer CFB, a colored layer CFG, and a colored layer CFR formed on each light emitting device formed on the first substrate 510. It is different from the configuration of the light emitting device.
  • the first insulating layer 573 is provided on the electrode 552 of each light emitting device formed on the first substrate 510, and the colored layer CFB, the colored layer CFG, and the colored layer CFR are on the first insulating layer 573. Has.
  • the second insulating layer 705 has a functional layer 520, each light emitting device (550B, 550G, 550R), and a colored layer CFB, a colored layer CFG, and a colored layer CFR, and a colored layer (CFB,) of the first substrate 510.
  • a region sandwiched with the second substrate 770 is provided, and a function of bonding the first substrate 510 and the second substrate 770 is provided.
  • an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used as the first insulating layer 573 and the second insulating layer 705.
  • an inorganic oxide film, an inorganic nitride film, an inorganic nitride film, or the like, or a laminated structure in which a plurality of layers selected from these are laminated can be used.
  • a silicon oxide film, a silicon nitride film, a silicon nitride film, an aluminum oxide film, or the like, or a film including a laminated structure in which a plurality of layers selected from these are laminated can be used.
  • the silicon nitride film is a dense film and has an excellent function of suppressing the diffusion of impurities.
  • the oxide semiconductor for example, IGZO film or the like
  • a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used.
  • organic material polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic or the like, or a laminated material or a composite material of a plurality of resins selected from these can be used.
  • organic materials such as reaction curable adhesives, photocurable adhesives, thermosetting adhesives and / and anaerobic adhesives can be used.
  • the EL layer 103P (light emitting layer 113P, electron injection / transport) so as to cover the electrodes (551B, 551G, 551R) and the partition wall 528 (see FIG. 4) formed on the first substrate 510.
  • a layer 104P is included), a charge generation layer (106B, 106G, 106R), and an EL layer 103Q (including a light emitting layer 113Q, an electron injection / transport layer 104Q, and an oxidation resistant layer 105Q).
  • the oxidation-resistant layer 105Q contained in the EL layer 103Q is formed by using an oxidation-resistant material.
  • an oxidation-resistant material Specifically, in the first embodiment, a composite in which an electron acceptor material is added to a hole transporting material which is an organic compound, which is mentioned as a material that can be used for the charge generation layer of the EL layer. A material or a laminate of a hole transporting material and an electron acceptor material can be used. Further, as the electron acceptor material, the material mentioned as the organic acceptor material used for the hole injection layer in the first embodiment can be used. Oxidation resistance can be improved by using a metal oxide as an electron acceptor material.
  • the metal oxide examples include oxides of metals belonging to Group 4 to Group 8 in the Periodic Table of the Elements. Specific examples thereof include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and renium oxide. Further, as the organic compound, a material listed as a hole transporting material can be used.
  • the oxidation-resistant layer 105 is formed when a resist is formed on the oxidation-resistant layer 105 in the subsequent steps. Elution can be suppressed.
  • the composition of the metal oxide and the organic compound used in the oxidation-resistant layer 105 is the weight of the organic compound with respect to the weight of the metal oxide in consideration of the film thickness and the transmittance of the oxidation-resistant layer 105. Is preferably 1/100 to 100 times, more preferably 1/20 to 20 times.
  • the EL layer 103P (including the light emitting layer 113P, the electron injection / transport layer 104P), the charge generation layer 106, and the EL layer 103Q (light emitting layer) on the electrodes (551B, 551G, 551R).
  • 113Q, electron injection / transport layer 104Q, and oxidation resistant layer 105Q are processed into a predetermined shape.
  • a resist REG is formed on an EL layer 103Q (including a light emitting layer 113Q, an electron injection / transport layer 104Q, and an oxidation resistant layer 105Q) on an electrode (551B, 551G, 551R) using a photolithography method, and is etched.
  • EL layer 103P (including light emitting layer 113P, electron injection / transport layer 104P), charge generation layer 106, and EL layer 103Q (light emitting layer 113Q, electron injection / transport layer 104Q,) on which a resist REG is not formed.
  • the oxidation-resistant layer 105Q is removed) and processed into a shape having side surfaces (or having side surfaces exposed) or a strip shape extending in a direction intersecting the paper surface. Specifically, dry etching is performed using a resist REG formed on the EL layer 103Q (including the light emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation resistant layer 105Q) (see FIG. 11C).
  • the partition wall 528 can be used as an etching stopper.
  • the EL layer 103P (including the light emitting layer 113P and the electron injection / transport layer 104P), the charge generation layer (106B, 106G, 106R), and the EL layer 103Q (including the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R).
  • the light emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation resistant layer 105Q) can be formed separately by pattern formation by a single photolithography method.
  • the EL layer 103P (including the light emitting layer 113P and the electron injection / transport layer 104P), the charge generation layer (106B, 106G, 106R), and the EL layer 103Q (light emitting layer 113Q, electron injection).
  • the block layer 107 and the electrode 552 are formed on the transport layer 104Q, the oxidation resistant layer 105Q), and the partition wall 528.
  • the block layer 107 and the electrode 552 are formed by using a vacuum vapor deposition method.
  • the electron transporting material described in the first embodiment can be used.
  • the block layer 107 is provided between the electrode 551B and the EL layer 103P and is formed by using an electron transporting material, it can be regarded as a part of the EL layer 103P.
  • the block layer 107 includes an EL layer 103P (including a light emitting layer 113P and an electron injection / transport layer 104P), a charge generation layer (106B, 106G, 106R), and an EL layer 103P (light emitting layer 113Q, an electron injection / transport layer). It is also formed on the side surface exposed when the (104P, including the oxidation resistant layer 105) is etched.
  • the electrode 552 is formed on the block layer 107.
  • the electrodes 552 include an EL layer 103P (including a light emitting layer 113P and an electron injection / transport layer 104P), a charge generation layer (106B, 106G, 106R), and an EL layer 103Q (light emitting layer 113Q,) via the block layer 107. It has a structure in contact with the side surface of the electron injection / transport layer 104Q and the oxidation resistant layer 105Q, respectively.
  • the EL layer 103P and the electrode 552 more specifically, the electron injection / transport layer 104P and the electrode 552, the EL layer 103Q and the electrode 552, and more specifically, the EL layer 103Q have.
  • the electron injection / transport layer 104Q and the electrode 552, or the charge generation layer 106R and the electrode 552 can be prevented from being electrically short-circuited.
  • the first block layer 107-1 in contact with the EL layer is a layer made of only an electron transporting material and having a high electric resistance, and is an electrode.
  • the second block layer 107-2 in contact with the electron-transporting material is a layer having a low electrical resistance, which is formed by doping an electron-transporting material with metal ions or the like, and these first block layer 107-1 and the second block layer. It is preferable to have a laminated structure having at least 107-2.
  • the insulating film 573, the colored layer CFB, the colored layer CFG, the colored layer CFR, and the insulating film 705 are formed (see FIG. 12B).
  • a flat film and a dense film are laminated to form an insulating film 573.
  • a flat film is formed by using a coating method, and a dense film is laminated on the flat film by using a chemical vapor deposition method (ALD: Atomic Layer Deposition) or the like. ..
  • ALD Atomic Layer Deposition
  • a color resist is used to form the colored layer CFB, the colored layer CFG, and the colored layer CFR into predetermined shapes.
  • the colored layer CFR and the colored layer CFB are processed so as to overlap each other on the partition wall 528. As a result, it is possible to suppress the phenomenon that the light emitted by the adjacent light emitting device wraps around.
  • an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used as the insulating layer 705.
  • a high-definition light emitting device (display panel) is used to form a pattern by a photolithography method. Can be produced. Further, the end portion (side surface of the laminated structure constituting the EL layer) processed by pattern formation by the photolithography method has a shape having substantially the same surface (or being located on substantially the same plane).
  • the electron injection layer and the charge generation layer (106B, 106G, 106R) included in the electron transport region in the EL layer (103P, 103Q) often have high conductivity, they can be used as layers common to adjacent light emitting devices. Once formed, it may cause crosstalk. Therefore, by separating and processing the EL layer by pattern formation by the photolithography method as shown in this configuration example, it is possible to suppress the occurrence of crosstalk generated between adjacent light emitting devices.
  • the light emitting device (display panel) 700 shown in FIG. 13 has a light emitting device 550B, a light emitting device 550G, a light emitting device 550R, and a partition wall 528. Further, the light emitting device 550B, the light emitting device 550G, the light emitting device 550R, and the partition wall 528 are formed on the functional layer 520 provided on the first substrate 510.
  • the functional layer 520 includes a drive circuit GD composed of a plurality of transistors, a drive circuit SD, and the like, as well as wiring for electrically connecting these. These drive circuits are electrically connected to the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R, and can drive them.
  • the light emitting device 550B, the light emitting device 550G, and the light emitting device 550R have the device structure shown in the first embodiment.
  • each light emitting device has the EL layer 103 having the structure shown in FIG. 2B, that is, the so-called tandem structure in common.
  • each light emitting device for example, between the light emitting device 550B and the light emitting device 550G. Therefore, it has a structure that forms an insulating layer 540 in this gap 580.
  • an EL layer 103P (including a light emitting layer 113P and an electron injection / transport layer 104P), a charge generation layer (106B, 106G, 106R), and an EL layer 103Q (light emitting layer 113Q, electron injection).
  • a photolithography method an EL layer 103P (including a light emitting layer 113P and an electron injection / transport layer 104P), a charge generation layer (106B, 106G, 106R), and an EL layer 103Q (light emitting layer 113Q, electron injection).
  • the insulating layer 540 can be formed in the gap 580 on the partition wall 528 by using a photolithography method.
  • the electrode 552 can be formed on the EL layer 103Q (including the light emitting layer 113Q, the electron injection / transport layer 104Q, and the oxidation resistant layer 105Q) and the insulating layer 540.
  • a high-definition light emitting device (display panel) is used to form a pattern by a photolithography method. Can be produced. Further, the end portion (side surface of the laminated structure constituting the EL layer) processed by pattern formation by the photolithography method has a shape having substantially the same surface (or being located on substantially the same plane).
  • the electron injection layer and the charge generation layer (106B, 106G, 106R) included in the electron transport region in the EL layer (103P, 103Q) often have high conductivity, they can be used as layers common to adjacent light emitting devices. Once formed, it may cause crosstalk. Therefore, by separating and processing the EL layer by pattern formation by the photolithography method as shown in this configuration example, it is possible to suppress the occurrence of crosstalk generated between adjacent light emitting devices.
  • the light emitting device 700 shown in FIGS. 14A to 16B has the light emitting device shown in the first embodiment. Further, the light emitting device 700 described in this embodiment can also be called a display panel because it can be applied to a display unit of an electronic device or the like.
  • the light emitting device 700 described in this embodiment includes a display area 231, and the display area 231 has a set of pixels 703 (i, j). Further, as shown in FIG. 14B, it has a set of pixels 703 (i + 1, j) adjacent to a set of pixels 703 (i, j).
  • a plurality of pixels can be used for the pixel 703 (i, j). For example, it is possible to use a plurality of pixels that display colors having different hues from each other. It should be noted that each of the plurality of pixels can be paraphrased as a sub-pixel. Alternatively, a plurality of sub-pixels can be combined into a set and paraphrased as a pixel.
  • the colors displayed by the plurality of pixels can be additively mixed or subtractively mixed.
  • the pixel 702B (i, j) displaying blue, the pixel 702G (i, j) displaying green, and the pixel 702R (i, j) displaying red are used for the pixel 703 (i, j). be able to. Further, each of the pixels 702B (i, j), the pixels 702G (i, j) and the pixels 702R (i, j) can be paraphrased as sub-pixels.
  • a pixel displaying white or the like may be used for the pixel 703 (i, j) in addition to the above set. Further, each of the pixel displaying cyan, the pixel displaying magenta, and the pixel displaying yellow may be used as sub-pixels in the pixel 703 (i, j).
  • a pixel that emits infrared rays may be used for the pixel 703 (i, j).
  • a pixel that emits light including light having a wavelength of 650 nm or more and 1000 nm or less can be used for the pixel 703 (i, j).
  • a drive circuit GD and a drive circuit SD are provided around the display area 231 shown in FIG. 14A. Further, it has a terminal 519 electrically connected to the drive circuit GD, the drive circuit SD, and the like.
  • the terminal 519 can be electrically connected to, for example, the flexible printed circuit FPC1 (see FIG. 16).
  • the drive circuit GD has a function of supplying a first selection signal and a second selection signal.
  • the drive circuit GD is electrically connected to the conductive film G1 (i) described later to supply a first selection signal, and is electrically connected to the conductive film G2 (i) described later to be a second selection signal.
  • Supply Further, the drive circuit SD has a function of supplying an image signal and a control signal, and the control signal includes a first level and a second level.
  • the drive circuit SD is electrically connected to the conductive film S1g (j) described later to supply an image signal, and is electrically connected to the conductive film S2g (j) described later to supply a control signal.
  • the light emitting device 700 has a functional layer 520 between the first substrate 510 and the second substrate 770.
  • the functional layer 520 includes wiring and the like for electrically connecting these.
  • the functional layer 520 shows a configuration including, but is not limited to, the pixel circuit 530B (i, j), the pixel circuit 530G (i, j), and the drive circuit GD.
  • each pixel circuit included in the functional layer 520 is each light emitting device (for example) formed on the functional layer 520.
  • the light emitting device 550B (i, j) shown in FIG. 16A, and the light emitting device 550G (i, j)) are electrically connected.
  • an insulating layer 705 is provided on the functional layer 520 and each light emitting device, and the insulating layer 705 has a function of bonding the second substrate 770 and the functional layer 520.
  • a substrate having a touch sensor in a matrix can be used as the second substrate 770.
  • a substrate provided with a capacitive touch sensor or an optical touch sensor can be used for the second substrate 770.
  • the light emitting device of one aspect of the present invention can be used as a touch panel.
  • FIG. 15A a specific configuration of the pixel circuit 530G (i, j) is shown in FIG. 15A.
  • the pixel circuit 530G (i, j) has a switch SW21, a switch SW22, a transistor M21, a capacitance C21 and a node N21. Further, the pixel circuit 530G (i, j) has a node N22, a capacitance C22, and a switch SW23.
  • the transistor M21 has a gate electrode electrically connected to the node N21, a first electrode electrically connected to the light emitting device 550G (i, j), and a second electrode electrically connected to the conductive film ANO. With electrodes.
  • the switch SW21 has a first terminal electrically connected to the node N21 and a second terminal electrically connected to the conductive film S1g (j), and has a potential of the conductive film G1 (i). It has a function of controlling a conductive state or a non-conducting state based on.
  • the switch SW22 has a first terminal electrically connected to the conductive film S2g (j), and has a function of controlling a conductive state or a non-conducting state based on the potential of the conductive film G2 (i). Have.
  • the capacitance C21 has a conductive film electrically connected to the node N21 and a conductive film electrically connected to the second electrode of the switch SW22.
  • the image signal can be stored in the node N21.
  • the potential of the node N21 can be changed by using the switch SW22.
  • the intensity of the light emitted by the light emitting device 550G (i, j) can be controlled by using the potential of the node N21.
  • FIG. 15B an example of the specific structure of the transistor M21 described with reference to FIG. 15A is shown in FIG. 15B.
  • the transistor M21 a bottom gate type transistor, a top gate type transistor, or the like can be appropriately used.
  • the transistor shown in FIG. 15B has a semiconductor film 508, a conductive film 504, an insulating film 506, a conductive film 512A, and a conductive film 512B.
  • the transistor is formed, for example, on the insulating film 501C.
  • the semiconductor film 508 has a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B.
  • the semiconductor film 508 has a region 508C between the regions 508A and 508B.
  • the conductive film 504 includes a region overlapping the region 508C, and the conductive film 504 has a function of a gate electrode.
  • the insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504.
  • the insulating film 506 has the function of a gate insulating film.
  • the conductive film 512A has either the function of the source electrode or the function of the drain electrode, and the conductive film 512B has the function of the source electrode or the function of the drain electrode.
  • the conductive film 524 can be used for the transistor.
  • the conductive film 524 has a region sandwiching the semiconductor film 508 with the conductive film 504.
  • the conductive film 524 has the function of a second gate electrode.
  • the insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524, and has the function of a second gate insulating film.
  • the semiconductor film used for the transistor of the pixel circuit can be formed.
  • a semiconductor film having the same composition as the semiconductor film used for the transistor of the pixel circuit can be used for the drive circuit.
  • a semiconductor containing a Group 14 element can be used as the semiconductor film 508, a semiconductor containing a Group 14 element can be used. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508.
  • hydrided amorphous silicon can be used for the semiconductor film 508.
  • microcrystalline silicon or the like can be used for the semiconductor film 508. Thereby, for example, it is possible to provide a light emitting device having less display unevenness than a light emitting device (or a display panel) using polysilicon for the semiconductor film 508. Alternatively, it is easy to increase the size of the light emitting device.
  • polysilicon can be used for the semiconductor film 508.
  • the electric field effect mobility of the transistor can be made higher than that of the transistor using hydride amorphous silicon for the semiconductor film 508.
  • the driving ability can be enhanced as compared with a transistor using hydride amorphous silicon for the semiconductor film 508.
  • the aperture ratio of the pixel can be improved as compared with a transistor using hydride amorphous silicon for the semiconductor film 508.
  • the reliability of the transistor can be improved as compared with a transistor using hydride amorphous silicon for the semiconductor film 508.
  • the temperature required for manufacturing the transistor can be made lower than that of a transistor using, for example, single crystal silicon.
  • the semiconductor film used for the transistor of the drive circuit can be formed by the same process as the semiconductor film used for the transistor of the pixel circuit.
  • the drive circuit can be formed on the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of parts constituting the electronic device can be reduced.
  • single crystal silicon can be used for the semiconductor film 508.
  • the definition can be improved as compared with the light emitting device (or the display panel) in which hydrogenated amorphous silicon is used for the semiconductor film 508.
  • smart glasses or head-mounted displays can be provided.
  • a metal oxide can be used for the semiconductor film 508.
  • the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once a minute, while suppressing the occurrence of flicker.
  • the fatigue accumulated in the user of the electronic device can be reduced.
  • the power consumption associated with driving can be reduced.
  • an oxide semiconductor can be used for the semiconductor film 508.
  • an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium and zinc, or an oxide semiconductor containing indium, gallium, zinc and tin can be used for the semiconductor film 508.
  • a circuit that uses a transistor that uses an oxide semiconductor as a semiconductor film for a switch holds the potential of a floating node for a longer time than a circuit that uses a transistor that uses hydride amorphous silicon as a semiconductor film for a switch. be able to.
  • a light emitting device having a structure that extracts light emission to the second substrate 770 side (top emission type) is shown, but as shown in FIG. 16B, a structure that extracts light to the first substrate 510 side (bottom emission type) is shown. It may be used as a light emitting device.
  • the first electrode is formed so as to function as a semi-transmissive / semi-reflective electrode
  • the second electrode is formed so as to function as a reflective electrode.
  • FIGS. 16A and 16B have described the active matrix type light emitting device
  • the configuration of the light emitting device shown in the first embodiment can be applied to the passive matrix type light emitting device shown in FIGS. 17A and 17B. good.
  • FIG. 17A is a perspective view showing a passive matrix type light emitting device
  • FIG. 17B is a cross-sectional view of FIG. 17A cut by XY.
  • an EL layer 955 is provided between the electrodes 952 and the electrodes 956 on the substrate 951.
  • the end of the electrode 952 is covered with an insulating layer 953.
  • a partition wall layer 954 is provided on the insulating layer 953.
  • the side wall of the partition wall layer 954 has an inclination such that the distance between one side wall and the other side wall becomes narrower as it gets closer to the substrate surface.
  • the cross section of the partition wall layer 954 in the minor axis direction is trapezoidal, and the lower base (the side in contact with the insulating layer 953) is shorter than the upper base.
  • 18A to 20B are views illustrating the configuration of an electronic device according to an aspect of the present invention.
  • 18A is a block diagram of an electronic device
  • FIGS. 18B to 18E are perspective views illustrating the configuration of the electronic device.
  • 19A to 19E are perspective views illustrating the configuration of the electronic device.
  • 20A and 20B are perspective views illustrating the configuration of the electronic device.
  • the electronic device 5200B described in this embodiment includes an arithmetic unit 5210 and an input / output device 5220 (see FIG. 18A).
  • the arithmetic unit 5210 has a function of supplying operation information, and has a function of supplying image information based on the operation information.
  • the input / output device 5220 has a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function of supplying operation information, and a function of supplying image information. Further, the input / output device 5220 has a function of supplying detection information, a function of supplying communication information, and a function of supplying communication information.
  • the input unit 5240 has a function of supplying operation information.
  • the input unit 5240 supplies operation information based on the operation of the user of the electronic device 5200B.
  • a keyboard a hardware button, a pointing device, a touch sensor, an illuminance sensor, an image pickup device, a voice input device, a line-of-sight input device, an attitude detection device, and the like can be used for the input unit 5240.
  • the display unit 5230 has a display panel and a function of displaying image information.
  • the display panel described in the second embodiment can be used for the display unit 5230.
  • the detection unit 5250 has a function of supplying detection information. For example, it has a function of detecting the surrounding environment in which an electronic device is used and supplying it as detection information.
  • an illuminance sensor an image pickup device, a posture detection device, a pressure sensor, a motion sensor, and the like can be used for the detection unit 5250.
  • the communication unit 5290 has a function of supplying communication information and a function of supplying communication information. For example, it has a function of connecting to other electronic devices or communication networks by wireless communication or wired communication. Specifically, it has functions such as wireless premises communication, telephone communication, and short-range wireless communication.
  • FIG. 18B shows an electronic device having an outer shape along a cylindrical pillar or the like.
  • One example is digital signage and the like.
  • the display panel according to one aspect of the present invention can be applied to the display unit 5230. It may be provided with a function of changing the display method according to the illuminance of the usage environment. It also has a function to detect the presence of a person and change the displayed contents. Thereby, for example, it can be installed on a pillar of a building. Alternatively, advertisements, information, etc. can be displayed.
  • FIG. 18C shows an electronic device having a function of generating image information based on the locus of a pointer used by a user.
  • Examples include electronic blackboards, electronic bulletin boards, and electronic signboards.
  • a display panel having a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more can be used.
  • a plurality of display panels can be arranged side by side and used for one display area.
  • a plurality of display panels can be arranged side by side and used for a multi-screen.
  • FIG. 18D shows an electronic device as a wristwatch-type portable information terminal that can receive information from another device and display it on the display unit 5230.
  • An example is a smart watch (registered trademark).
  • some options can be displayed, or the user can select some from the options and reply to the sender of the information.
  • it has a function of changing the display method according to the illuminance of the usage environment. Thereby, for example, the power consumption of the smart watch can be reduced.
  • the image can be displayed on the smart watch so that it can be suitably used even in an environment with strong outside light such as outdoors in fine weather.
  • FIG. 18E shows an electronic device having a display unit 5230 having a curved surface that gently bends along the side surface of the housing.
  • An example is a mobile phone.
  • the display unit 5230 includes a display panel, and the display panel has, for example, a function of displaying on the front surface, the side surface, the top surface, and the back surface. Thereby, for example, information can be displayed not only on the front surface of the mobile phone but also on the side surface, the top surface and the back surface.
  • FIG. 19A shows an electronic device capable of receiving information from the Internet and displaying it on the display unit 5230.
  • An example is a smartphone.
  • the created message can be confirmed on the display unit 5230.
  • the created message can be sent to another device.
  • it has a function of changing the display method according to the illuminance of the usage environment. As a result, the power consumption of the smartphone can be reduced.
  • the image can be displayed on the display unit 5230 so that it can be suitably used even in an environment with strong outside light such as outdoors in fine weather.
  • FIG. 19B shows an electronic device in which the remote controller can be the input unit 5240.
  • An example is a television system.
  • information can be received from a broadcasting station or the Internet and displayed on the display unit 5230.
  • the user can be photographed using the detection unit 5250.
  • the user's video can be transmitted.
  • the viewing history of the user can be acquired and provided to the cloud service.
  • the recommendation information can be acquired from the cloud service and displayed on the display unit 5230.
  • the program or video can be displayed based on the recommendation information.
  • it has a function of changing the display method according to the illuminance of the usage environment. As a result, the image can be displayed on the display unit 5230 so that it can be suitably used even when it is exposed to strong external light that is inserted indoors on a sunny day.
  • FIG. 19C shows an electronic device capable of receiving teaching materials from the Internet and displaying them on the display unit 5230.
  • An example is a tablet computer.
  • the input unit 5240 can be used to input a report and send it to the Internet.
  • the correction result or evaluation of the report can be acquired from the cloud service and displayed on the display unit 5230.
  • suitable teaching materials can be selected and displayed based on the evaluation.
  • an image signal can be received from another electronic device and displayed on the display unit 5230.
  • the display unit 5230 can be used as a sub-display by leaning against a stand or the like. This makes it possible to display an image on a tablet computer so that it can be suitably used even in an environment with strong external light such as outdoors in fine weather.
  • FIG. 19D shows an electronic device having a plurality of display units 5230.
  • An example is a digital camera.
  • it can be displayed on the display unit 5230 while being photographed by the detection unit 5250.
  • the captured image can be displayed on the display unit 5230.
  • the input unit 5240 can be used to decorate the captured image.
  • it has a function of changing the shooting conditions according to the illuminance of the usage environment.
  • the subject can be displayed on the display unit 5230 so that the subject can be suitably viewed even in an environment with strong outside light such as outdoors in fine weather.
  • FIG. 19E shows an electronic device capable of controlling another electronic device by using another electronic device as a slave and using the electronic device of the present embodiment as a master.
  • An example is a portable personal computer.
  • a part of the image information can be displayed on the display unit 5230, and another part of the image information can be displayed on the display unit of another electronic device.
  • an image signal can be supplied.
  • the communication unit 5290 can be used to acquire information to be written from an input unit of another electronic device. This makes it possible to utilize a wide display area, for example, by using a portable personal computer.
  • FIG. 20A shows an electronic device having a detection unit 5250 that detects acceleration or direction.
  • An example is a goggle-type electronic device.
  • the detection unit 5250 can supply information regarding the position of the user or the direction in which the user is facing.
  • the electronic device can generate image information for the right eye and image information for the left eye based on the position of the user or the direction in which the user is facing.
  • the display unit 5230 has a display area for the right eye and a display area for the left eye. Thereby, for example, an image of a virtual reality space that gives an immersive feeling can be displayed on the display unit 5230.
  • FIG. 20B shows an image pickup device, an electronic device having a detection unit 5250 for detecting acceleration or direction.
  • An example is a glasses-type electronic device.
  • the detection unit 5250 can supply information regarding the position of the user or the direction in which the user is facing.
  • the electronic device can generate image information based on the position of the user or the direction in which the user is facing. Thereby, for example, information can be attached and displayed on a real landscape.
  • the image of the augmented reality space can be displayed on a glasses-type electronic device.
  • FIG. 21A is a cross-sectional view taken along the line ef in the top view of the lighting device shown in FIG. 21B.
  • the first electrode 401 is formed on the translucent substrate 400 which is a support.
  • the first electrode 401 corresponds to the first electrode 101 in the first embodiment.
  • the first electrode 401 is formed of a translucent material.
  • a pad 412 for supplying a voltage to the second electrode 404 is formed on the substrate 400.
  • the EL layer 403 is formed on the first electrode 401.
  • the EL layer 403 corresponds to the configuration of the EL layer 103 in the first embodiment, or the configuration in which the EL layers 103a, 103b, 103c and the charge generation layer 106 (106a, 106b) are combined. Please refer to the description for these configurations.
  • a second electrode 404 is formed by covering the EL layer 403.
  • the second electrode 404 corresponds to the second electrode 102 in the first embodiment.
  • the second electrode 404 is formed of a material having a high reflectance.
  • the second electrode 404 is connected to the pad 412 to supply a voltage.
  • the lighting device showing the light emitting device having the first electrode 401, the EL layer 403, and the second electrode 404 in the present embodiment has. Since the light emitting device is a light emitting device having high luminous efficiency, the lighting device in the present embodiment can be a lighting device having low power consumption.
  • the lighting device is completed by fixing the substrate 400 on which the light emitting device having the above configuration is formed and the sealing substrate 407 using the sealing materials 405 and 406 and sealing them. Either one of the sealing materials 405 and 406 may be used. Further, a desiccant can be mixed with the inner sealing material 406 (not shown in FIG. 21B), whereby moisture can be adsorbed, which leads to improvement in reliability.
  • the pad 412 and a part of the first electrode 401 can be used as an external input terminal.
  • an IC chip 420 or the like on which a converter or the like is mounted may be provided on the IC chip 420.
  • the ceiling light 8001 has a ceiling-mounted type and a ceiling-embedded type. It should be noted that such a lighting device is configured by combining a light emitting device with a housing or a cover. In addition, it can be applied to the cord pendant type (cord hanging type from the ceiling).
  • the foot light 8002 can irradiate the floor surface with a light to enhance the safety of the foot. For example, it is effective to use it for bedrooms, stairs, and passageways. In that case, the size and shape can be appropriately changed according to the size and structure of the room. It is also possible to make a stationary lighting device configured by combining a light emitting device and a support base.
  • the sheet-shaped lighting 8003 is a thin sheet-shaped lighting device. Since it is attached to the wall surface, it can be used for a wide range of purposes without taking up space. It is also easy to increase the area. It can also be used for a wall surface having a curved surface and a housing.
  • the lighting device 8004 in which the light from the light source is controlled only in a desired direction.
  • the desk lamp 8005 has a light source 8006, and as the light source 8006, a light emitting device according to an aspect of the present invention or a light emitting device which is a part thereof can be applied.
  • a lighting device having a function as furniture can be obtained. can do.
  • 100 Light emitting device, 101: First electrode, 102: Second electrode, 103, 103a, 103b, 103c: EL layer, 103B, 103G, 103R: EL layer, 103P, 103Q: EL layer, 104, 104a, 104b: Electron injection / transport layer, 104B, 104G, 104R: Electron injection / transport layer, 104P, 104Q: Hole injection / transport layer, 105, 105B, 105G, 105R: Oxidation resistant layer, 106, 106B, 106G, 106R: Charge generation layer, 107: block layer, 107-1: first block layer, 107-2: second block layer, 107-3: second block layer, 111, 111a, 111b: hole injection layer, 112, 112a, 112b: hole transport layer, 113, 113a, 113b, 113c: light emitting layer, 114, 114b: electron transport layer, 115,

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PCT/IB2021/061732 2020-12-25 2021-12-15 発光デバイス、発光装置、電子機器、および照明装置 Ceased WO2022137023A1 (ja)

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CN202180086121.0A CN116648997A (zh) 2020-12-25 2021-12-15 发光器件、发光装置、电子设备及照明装置
KR1020237018637A KR20230124564A (ko) 2020-12-25 2021-12-15 발광 디바이스, 발광 장치, 전자 기기, 및 조명 장치
JP2022570763A JPWO2022137023A1 (https=) 2020-12-25 2021-12-15
US18/039,593 US20240099052A1 (en) 2020-12-25 2021-12-15 Light-emitting device, light-emitting apparatus, electronic device, and lighting device
JP2026003135A JP2026050469A (ja) 2020-12-25 2026-01-12 発光デバイス

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