WO2022130622A1 - Dispositif optique - Google Patents

Dispositif optique Download PDF

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Publication number
WO2022130622A1
WO2022130622A1 PCT/JP2020/047451 JP2020047451W WO2022130622A1 WO 2022130622 A1 WO2022130622 A1 WO 2022130622A1 JP 2020047451 W JP2020047451 W JP 2020047451W WO 2022130622 A1 WO2022130622 A1 WO 2022130622A1
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WO
WIPO (PCT)
Prior art keywords
optical device
waveguide
region
passive waveguide
active region
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PCT/JP2020/047451
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English (en)
Japanese (ja)
Inventor
優 山岡
慎治 松尾
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日本電信電話株式会社
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Priority to JP2022569666A priority Critical patent/JPWO2022130622A1/ja
Priority to PCT/JP2020/047451 priority patent/WO2022130622A1/fr
Publication of WO2022130622A1 publication Critical patent/WO2022130622A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Definitions

  • the present invention relates to an optical device using a semiconductor laser.
  • a semiconductor laser which is a typical optical transmitter, can transmit a large-capacity signal over a long distance.
  • a semiconductor laser used in an information communication system first, there is an external modulation laser that modulates a signal by a modulator provided outside the semiconductor laser. Further, the semiconductor laser used in the information communication system includes a directly modulated laser that directly modulates the output light by modulating the current injected into the active region.
  • the direct modulation laser has features such as small size, low power consumption, and low cost compared to the external modulation laser. For this reason, the direct modulation laser is widely used as a transmitter of an information communication system for a relatively short distance in or between data centers.
  • the direct modulation laser has a problem that the modulation speed is slow because the modulation band is narrower than that of the external modulation laser. This is because when the current injection is increased for high-speed operation, the heat generation of the semiconductor laser active layer lowers the luminous efficiency and limits the increase in the modulation band.
  • the intrinsic band is regulated by the relaxation vibration frequency.
  • the direct modulation laser using PPR has a structure in which a distributed feedback type (DFB) laser active region and a passive waveguide responsible for a light feedback mechanism are connected adjacent to each other.
  • a laser active region is optically connected to one end of the passive waveguide. Further, both ends of the passive waveguide serve as reflection points (Non-Patent Document 2 and Non-Patent Document 3).
  • the laser beam generated in the laser active region interacts with the Fabry-Perot type resonance mode formed in the optical feedback region by the passive waveguide, and PPR is generated when the phase matching condition is satisfied.
  • the state of PPR is controlled by adjusting the phase by changing the refractive index due to the injected current.
  • the PPR frequency is approximately defined by the frequency difference between the laser oscillation mode and the Fabry-Pérot type resonant peak.
  • the frequency at which the response enhancement due to PPR occurs is defined within the free spectral range (FSR) defined by the length of the optical feedback region due to the passive waveguide.
  • FSR free spectral range
  • the length of the optical feedback region is limited to 300 ⁇ m in order to generate PPR at about 43 GHz. Phase control in this relatively long optical feedback region requires a large amount of power consumption.
  • Non-Patent Document 2 the waveguide length is 135 ⁇ m
  • Non-Patent Document 3 the waveguide length is 120 ⁇ m
  • a larger FSR is defined as compared with Non-Patent Document 1.
  • the PPR frequency determined by the frequency difference between the laser oscillation mode and the Fabry-Perot type resonance peak can be defined to be larger.
  • the phase change with respect to the wavelength change becomes gentle, so that relatively stable operation can be realized with respect to the injection current change and the temperature change.
  • Non-Patent Document 2 a laser using a PPR composed of a relatively short resonator
  • SOA semiconductor optical amplifier
  • the present invention has been made to solve the above problems, and the PPR frequency and the intensity of the reflected reflected light and the intensity of the output light that determine this response can be independently controlled.
  • the purpose is to do so.
  • the optical device has a distributed feedback type laser active region formed on a substrate and an optical device formed on a substrate and optically connected to one end of the laser active region in the waveguide direction.
  • an amplification region formed on the substrate and optically connected to one end of the reflection region, the frequency of the light generated in the laser active region and the frequency of the Fabry-Pérot mode of the passive waveguide.
  • Laser oscillation is performed using photon-photon resonance generated according to the difference.
  • the laser active region, the passive waveguide, the reflection region and the amplification region are provided, so that the PPR frequency and the intensity and output of the feedback reflected light that determines this response are provided.
  • the intensity of light can be controlled independently.
  • FIG. 1 is a configuration diagram showing a configuration of an optical device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing the configuration of an optical device according to an embodiment of the present invention.
  • FIG. 3 is an explanatory diagram illustrating the generation of PPR.
  • FIG. 4 is a characteristic diagram showing the relationship between the length of the reflection region 103 and the reflectance.
  • FIG. 5 is a characteristic diagram showing an optical spectrum in each region when the reflectance of the reflection region 103 is changed.
  • FIG. 6 is an explanatory diagram illustrating a change in the optical spectrum after being amplified in the amplification region 104.
  • FIG. 7 is an explanatory diagram illustrating a state in which the S21 response regarding PPR increases due to amplification by the amplification region 104.
  • FIG. 8 is a cross-sectional view showing a partial configuration of another optical device according to the embodiment of the present invention.
  • FIG. 9A is a perspective view showing a partial configuration of another optical device according to the embodiment of the present invention.
  • FIG. 9B is a perspective view showing a partial configuration of another optical device according to the embodiment of the present invention.
  • This optical device has a distributed feedback type laser active region 101, a passive waveguide 102 optically connected to one end of the laser active region 101 in the waveguide direction, and optical to one end of the passive waveguide 102 in the waveguide direction.
  • the reflection region 103 is provided with the reflection region 103, and the amplification region 104 optically connected to one end of the reflection region 103 in the waveguide direction.
  • the passive waveguide 102 In the passive waveguide 102, reflection points 105 and 106, which are locations where reflection occurs, are formed at both ends in the waveguide direction. Further, the passive waveguide 102 has an optical waveguide structure, has a Fabry-Perot type resonator structure, and can form a Fabry-Perot (FP) mode. Further, the passive waveguide 102 can form a composite mode with the laser active region 101.
  • FP Fabry-Perot
  • the optical device includes, for example, a substrate 111 and a lower clad layer 112 formed on the substrate 111, as shown in FIG. Note that FIG. 2 shows a cross section parallel to the waveguide direction and perpendicular to the plane of the substrate 111.
  • the substrate 111 can be composed of, for example, InP which is made n-type by doping with Si. Further, the substrate 111 may be composed of, for example, GaAs, SiO 2 , Si, or SiC.
  • the lower clad layer 112 can be composed of, for example, an n-shaped InP. Further, the lower clad layer 112 may be composed of SiO 2 .
  • the active layer 113 is formed on the lower clad layer 112, and the diffraction grating 114 is formed on the active layer 113.
  • the active layer 113 can have, for example, a multiple quantum well structure made of InGaAsP or InGaAlAs. Further, the active layer 113 may have a bulk structure made of the above-mentioned material.
  • the diffraction grating 114 is composed of a concave portion and a convex portion adjacent to the concave portion, and these are arranged in the waveguide direction. In the diffraction grating 114, a portion (1/4 shift portion) whose phase is ⁇ inverted can be formed in a part (central portion) in the waveguide direction. The phase shift of this partial 1/4 shift section enables single-mode light emission at the Bragg wavelength.
  • the core 115 is formed.
  • the core 115 can be composed of, for example, InGaAlAs whose lattice constant in the plane direction of the substrate 111 is lattice-matched to InP.
  • the core 116 is formed, and the diffraction grating 117 can be formed on the core 116.
  • the core 115 can be composed of, for example, InGaAlAs whose lattice constant in the plane direction of the substrate 111 is lattice-matched to InP.
  • the diffraction grating 117 is composed of a concave portion and a convex portion adjacent to the concave portion, and these are arranged in the waveguide direction.
  • the reflection region 103 can have a DBR mirror structure, but the present invention is not limited to this, and the reflection region 103 can also be composed of a mere air gap, a ring resonator, or the like.
  • the active layer 118 is formed on the lower clad layer 112.
  • the active layer 118 can have, for example, a multiple quantum well structure made of InGaAsP or InGaAlAs.
  • An upper clad layer 119 is formed on the active layer 113, the core 115, the core 116, and the active layer 118.
  • the active layer 113 extends in the waveguide direction, and the shape of the cross section perpendicular to the waveguide direction is the same as that of the core 115.
  • the core 115 and the core 116 also extend in the waveguide direction.
  • the active layer 118 also extends in the waveguide direction, and the shape of the cross section perpendicular to the waveguide direction is the same as that of the core 116.
  • the upper clad layer 119 covers the active layer 113, the core 115, the core 116, and the active layer 118, and is formed on the lower clad layer 112.
  • the upper clad layer 119 can be composed of, for example, InP.
  • a part of the upper clad layer 119 above the active layer 113 is, for example, p-shaped. Further, the upper clad layer 119 in other regions including the upper part of the core 115 is i-type (non-doped).
  • the n-type lower clad layer 112, the i-type active layer 113, and the upper clad layer 119 are p-shaped regions. It can be laminated to form a so-called vertical n-ip structure.
  • a so-called longitudinal current injection type current injection structure can be configured by the p-type region of the lower clad layer 112 and the upper clad layer 119.
  • the current injection mechanism may be configured to include an n-type layer and a p-type layer arranged with the active layer 113 interposed therebetween. For example, an n-electrode is formed on the n-type layer, and a p-electrode is formed on the p-type layer. This is a so-called lateral current injection type current injection structure.
  • the laser active region 101 of the optical waveguide structure having the active layer 113 as the core and the passive waveguide 102 of the optical waveguide structure by the core 115 can be formed by directly joining each other.
  • the reflection point 105 is effectively formed for the light traveling from the passive waveguide 102 to the laser active region 101 by the reflection at the reflection portion by the diffraction grating 114 of the laser active region 101.
  • the position of the reflection point 105 configured in this way deviates from the boundary between the laser active region 101 and the passive waveguide 102 by the penetration depth of light.
  • the passive waveguide 102 of the optical waveguide structure formed by the core 115 and the reflection region 103 of the optical waveguide structure formed by the core 116 can be formed by directly joining each other.
  • the reflection point 106 is effectively formed for the light traveling from the passive waveguide 102 to the reflection region 103 due to the reflection at the reflection portion by the diffraction grating 117 of the reflection region 103.
  • the reflection point 105 and the reflection point 106 can be formed by another structure.
  • Each layer structure made of the above-mentioned compound semiconductor can be formed by, for example, epitaxial growth by a known organic metal vapor phase growth method or the like. Further, each core, each diffraction grating, and the like can be formed by processing (patterning) by a known lithography technique and etching technique.
  • spot size conversion structure in the light emitting portion of the optical device to reduce the optical coupling loss with the optical fiber or the external optical waveguide.
  • the spot size conversion structure it is possible to adiabatically shift the mode from the conversion core tapered as the distance from the connecting point to the spot size conversion core region.
  • this optical device uses photon-photon resonance (PPR) generated according to the frequency difference between the frequency of the light generated (oscillated) in the laser active region 101 and the frequency of the FP mode of the passive waveguide 102.
  • PPR photon-photon resonance
  • the PPR has a peak wavelength of the transmission spectrum 201 in the laser active region 101 (peak wavelength in the oscillation wavelength) and a peak wavelength of the transmission spectrum 202 in the passive waveguide 102 (peak wavelength in the FP mode). It occurs according to the frequency difference.
  • the PPR frequency is defined within the FSR, which is determined by the length of the passive waveguide 102.
  • the operating range of the desired PPR frequency can be obtained by adjusting the FSR by changing the length of the passive waveguide 102 according to the application.
  • the S21 response intensity at the PPR frequency increases as the area of the overlapping region 203 of each spectrum shown in FIG. 3 increases.
  • PPR can be expressed regardless of the length of the passive waveguide 102 in the waveguide direction.
  • a wide modulation band by PPR capable of high-speed direct modulation can be realized with a short element length, the effect of PPR can be stably exhibited, and the controllability is high. High-speed optical devices are feasible.
  • the reflection region 103 optically connected to the rear stage of the passive waveguide 102 makes it possible to adjust the optical feedback light intensity to the laser active region 101 of the front stage.
  • the reflection region 103 is a DBR mirror
  • the reflectance can be adjusted by changing the length (length in the waveguide direction) of the reflection region 103 as shown in FIG.
  • FIG. 5 shows an optical spectrum when the reflectance of the reflection region 103 is changed.
  • the transmission spectrum 202 expands to the transmission spectrum 202a, the light intensity of the feedback side mode increases, and the overlap area of the spectra increases only in the overlap region 204 shown in FIG. do.
  • FIG. 6 shows the optical spectrum after being amplified in the amplification region 104.
  • the transmission spectrum 201 expands to the transmission spectrum 201a
  • the transmission spectrum 202 expands to the transmission spectrum 202b
  • the effective optical spectrum overlapping region 205 increases.
  • FIG. 7 shows the S21 small signal response of the laser using PPR.
  • the frequency of the Fabry-Perot mode of the passive waveguide 102 can be adjusted by using a frequency adjustment mechanism.
  • the frequency adjustment mechanism can be composed of either injecting a current into the passive waveguide 102, controlling the temperature, or applying an electric field, and adjusts the frequency of the Fabry-Perot mode.
  • frequency control can be realized by providing a resistance heating type heater made of a metal such as tantalum as a temperature control mechanism.
  • the adjustment of the feedback light intensity changes the reflectance of the reflection region 103.
  • the desired reflectance can be controlled by changing the length of the reflection region 103 in the waveguide direction or by providing a heater on the reflection region 103 and adjusting the Bragg wavelength.
  • the reflection region 103 can be a simple air gap or a ring resonator.
  • the optical output can be amplified by, for example, injecting a current into the amplification region 104.
  • a DBR region 121 optically connected to the other end of the laser active region 101 in the waveguide direction may be further provided.
  • FIG. 8 shows a cross section parallel to the waveguide direction and perpendicular to the plane of the substrate 111. Further, in FIG. 8, the reflection region 103 and the amplification region 104 are omitted.
  • the core 122 is formed on the lower clad layer 112, and the diffraction grating 123 is formed on the core 122.
  • the core 122 can be composed of, for example, InGaAlAs.
  • the DBR region 121 By providing the DBR region 121 in this way, single mode can be realized as shown below without using phase shift.
  • a transmission peak on the short wave side of the laser active region 101 can be selected, and laser operation and band expansion by PPR can be performed.
  • the fringe peak on the longer wavelength side than the peak wavelength of the reflection spectrum of the DBR region 121 and the peak of the FP mode are concentrated in the stop band of the transmission spectrum in the laser active region 101.
  • most of the modes in the region slightly longer than the peak of the transmission spectrum, which is important for PPR expression are attenuated, and stable single-mode operation and PPR expression are possible.
  • the width of the passive waveguide 102 (core 115) on the side of the laser active region 101 (the width of the core 115 at the connection portion with the active layer 113) and the laser active region 101 of the passive waveguide 102 (core 115)?
  • the reflectance of the reflection points 105 and 106 can be adjusted by making the width of the reflection point 106 on the opposite side different, and the S21 response at the PPR frequency and the S21 response at the PPR frequency can be adjusted by the same principle as the enhancement of the PPR application shown in FIG. , PPR frequency can be adjusted.
  • the core 115 of the passive waveguide 102 is butt-coupled to the active layer 113 (core) of the laser active region 101 so that at least one of the thickness and the width is different from the active layer 113 (core), thereby reflecting these connection points. It can be point 105.
  • the connection point between the laser active region 101 and the passive waveguide 102 can be set as the reflection point 105.
  • the reflection point 105 can be formed by forming the active layer 113 with a multiple quantum structure made of InGaAlAs and the core 115 made of InGaAlAs or InGaAsP.
  • the reflection point 105 can also be formed by forming a groove extending in the direction intersecting the waveguide direction in the upper clad layer 119 at the connection point between the laser active region 101 and the passive waveguide 102. By forming such a groove, an inflection point of the refractive index is formed at this point, and the reflection point 105 can be obtained.
  • the difference in refractive index between the lower clad layer 112 and the upper clad layer 119a and the active layer 113 (core 115) can be increased, and the active layer can be increased. It will be possible to trap light more strongly in 113. Due to this stronger light confinement, the interaction between the light returned from the passive waveguide 102 and the light in the laser active region 101 can be further increased. As a result, the band can be increased by PPR without increasing the reflection return component from the laser active region 101.
  • a high reflectance (HR) coating is not required on the end face of the passive waveguide 102, and the structure can be easily formed. ..
  • HR high reflectance
  • the frequency difference between the transmission spectrum 201 in the laser active region 101 and the transmission spectrum 202 in the passive waveguide 102 is large. Even in this case, PPR is generated, so that it is possible to design to increase the band in the high frequency region.
  • the diffraction grating 114 having a large degree of refractive index modulation can be formed in the laser active region 101, the laser active region 101 by the diffraction grating 114 having a large coupling coefficient can be realized.
  • the width of the stopband of the laser active region 101 becomes large, so that most of the maximum peaks of the transmission spectrum of the passive waveguide 102 are contained in the stopband.
  • the instability of the laser operation due to the interference between the peak of the oscillated light in the laser active region 101 and the peak of the FP mode in the passive waveguide 102 is unlikely to occur.
  • the FP mode In a DFB laser with a small coupling coefficient of a general diffraction grating, the FP mode hardly enters the stop band of the DFB laser, so that operation instability is likely to occur due to interference between the FP mode and the DFB mode.
  • the operation can also be affected by adjusting the gain spectrum of the material constituting the active layer 113, but it is possible to select only the DFB and FP mode peaks, which are smaller than when the coupling coefficient is small. Therefore, single mode operation and stable operation (easiness of expression of mode hop and PPR) are possible.
  • the intensity of the return light (end face reflectance) from the passive waveguide 102 is defined by the structure.
  • the return light is appropriately amplified or attenuated during operation.
  • the shape (cross-sectional shape) of the core 115 of the passive waveguide 102 is changed.
  • the cross-sectional shape of the core 115 may be narrowed or widened, thickened or thinned with respect to the cross-sectional shape of the active layer 113.
  • the diameter of the core 115 may be reduced or increased as the distance from the active layer 113 increases.
  • the core 115a can be formed in which the shape of the cross section perpendicular to the waveguide direction is multi-staged in the thickness direction.
  • the shape of the cross section perpendicular to the waveguide direction may be multi-staged in the thickness direction, and the upper stage and the lower stage may be core 115b made of different materials.
  • the laser active region, the passive waveguide, the reflection region and the amplification region are provided, so that the PPR frequency and the intensity of the feedback reflected light that determines this response and the intensity of the reflected light are determined.
  • the intensity of the output light can be controlled independently.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Dispositif optique étant équipé d'une région active au laser (101) du type à rétroaction répartie, d'un guide d'ondes passif (102) qui est optiquement connecté à une extrémité de la région active au laser (101) dans la direction d'onde guidée, d'une région de réflexion (103) qui est optiquement connectée à ladite extrémité du guide d'ondes passif (102) dans la direction d'onde guidée, et d'une zone d'amplification (104) qui est optiquement connectée à une extrémité de la zone de réflexion (103) dans la direction d'onde guidée. Un point de réflexion (105) et un point de réflexion (106), qui sont des emplacements où une réflexion est produite, sont respectivement formés sur les deux extrémités du guide d'ondes passif (102) dans la direction d'onde guidée. De plus, le guide d'ondes passif (102) est équipé d'une structure de guide d'ondes optique, est configuré sous la forme d'une structure de résonateur du type Fabry-Perot et est capable de former un mode de Fabry-Perot.
PCT/JP2020/047451 2020-12-18 2020-12-18 Dispositif optique WO2022130622A1 (fr)

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JP2017527121A (ja) * 2014-09-08 2017-09-14 オクラロ テクノロジー リミテッド モノリシック集積された波長可変半導体レーザー
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