WO2021148120A1 - Laser dfb à mode unique - Google Patents

Laser dfb à mode unique Download PDF

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Publication number
WO2021148120A1
WO2021148120A1 PCT/EP2020/051565 EP2020051565W WO2021148120A1 WO 2021148120 A1 WO2021148120 A1 WO 2021148120A1 EP 2020051565 W EP2020051565 W EP 2020051565W WO 2021148120 A1 WO2021148120 A1 WO 2021148120A1
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WO
WIPO (PCT)
Prior art keywords
waveguide
laser
section
reflector
elements
Prior art date
Application number
PCT/EP2020/051565
Other languages
English (en)
Inventor
Xin Chen
Original Assignee
Huawei Technologies Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co., Ltd. filed Critical Huawei Technologies Co., Ltd.
Priority to CN202080091537.7A priority Critical patent/CN114930657A/zh
Priority to PCT/EP2020/051565 priority patent/WO2021148120A1/fr
Publication of WO2021148120A1 publication Critical patent/WO2021148120A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers

Definitions

  • This invention relates to lasers, for example to promoting single-mode lasing.
  • High-performance and low-cost laser modules are used in applications such as large-capacity and high-speed optical access networks.
  • a conventional laser diode generally comprises a semiconductor block which has a front face or facet, a rear face or facet opposite to the front facet and a laser cavity formed therebetween.
  • the cavity traditionally comprises an active layer interposed between layers of p- or n-type semiconductor material.
  • One or more coating layers such as anti-reflection (AR) or high- reflection (HR) coatings, may be applied to the front and the rear facets to provide a predetermined reflectivity.
  • a Bragg grating acts as the wavelength selective element for at least one of the faces and provides feedback, reflecting light back into the cavity to form the resonator.
  • a waveguide restricts the region in which light can propagate and comprises a region of increased refractive index relative to the surrounding material, such that total internal refection of light occurs within the waveguide. This makes it possible to direct the emitted light into a collimated beam, and allows a laser resonator to be built such that light can be coupled back into the gain medium.
  • InP single-mode DFB laserfs are widely used in telecommunication systems. Due to symmetry, a conventional DFB with a full grating, as illustrated in the plan view of Figure 1 , has two competing lasing modes.
  • the Bragg grating comprises a series of parallel elements, shown at 101.
  • a tapered waveguide can also be used to break the DFB structure symmetry.
  • tapering the waveguide affects the refractive index of the waveguide, such that the grating must be chirped to result in a single wavelength output.
  • a curved waveguide may be used to break the DFB structure symmetry.
  • a higher Kappa is normally used for higher bandwidth, which may lead to spatial-hole burning and mode-hop.
  • the yield of a DFB laser is sensitive to facet phases and external optical reflection.
  • the external optical feedback not only changes the threshold current, efficiency, linewidth, and intensity noise, but also destroys the modulated diagram and produces bit-error-rate (BER) saturation.
  • BER bit-error-rate
  • Optical isolators may be inserted in DFB-LD modules to cut off the external optical feedback. However, this makes the DFB modules expensive and increases their size.
  • a laser having a rear reflector, a front reflector and a laser cavity defined between the rear reflector and the front reflector, the cavity having a waveguide comprising a Bragg grating having a series of parallel elements of equal physical spacing along an axis, wherein the waveguide comprises: a first waveguide section comprising a first subset of the elements, the first waveguide section extending along a first direction; and a second waveguide section comprising a second subset of the elements, the second waveguide section optically connected to the first waveguide section and extending along a second direction offset to the first direction.
  • the second waveguide section is optically connected to the first waveguide section in the sense that light can propagate from the first into the second waveguide section and from the second into the first waveguide section.
  • the first direction may be orthogonal to one or both of the front reflector and the rear reflector. This may be convenient for manufacturing the laser.
  • the axis may be parallel to the first direction. This may allow one of the waveguide sections to be aligned with the length of the cavity and the other waveguide section to be angled relative to it.
  • the first waveguide may promote optical intensification at a first lower wavelength peak and a first higher wavelength peak
  • the second waveguide may promote optical intensification at a second lower wavelength peak and a second higher wavelength peak
  • the first direction and the second direction may be offset such that the first higher wavelength peak overlaps in wavelength with the second lower wavelength peak. This may allow a single lasing mode to be realized by a achieving a single-wavelength high-intensity peak.
  • Each of the elements may extend orthogonally to the axis. This may be convenient for manufacturing the laser.
  • One of the first and second waveguide sections may terminate at (or be adjacent to) the front reflector and the other of the first and second waveguide sections may terminate at (or be adjacent to) the rear reflector.
  • the waveguide may therefore be formed as a two-part waveguide.
  • the waveguide may have a width between 0.5 pm to 3.0 pm. This may allow the effective refractive index of the waveguide to be selected accordingly.
  • One or both of the front reflector and the rear reflector may be constituted by a cleaved facet. This may be convenient for manufacturing the laser.
  • the front reflector may be coated with an anti-reflection coating.
  • the rear reflector may be coated with an anti-reflection coating or a high-reflection coating. This may improve the performance of the laser.
  • the waveguide may be a ridge waveguide or a buried heterostructure waveguide. This may allow flexibility in manufacturing the laser.
  • the strength of the Bragg grating Kappa*L may be in the range from 0.7 to 3.0. This may allow the optical properties of the laser to be selected accordingly.
  • the first direction and the second direction may be offset by between 1 to 8 degrees. This may allow the effective pitch of the waveguide sections to be selected accordingly.
  • the laser may be a distributed feedback laser.
  • the laser may be a single-mode laser. This may allow the laser to be used for applications requiring a single lasing mode, such as telecommunications.
  • Figure 1 shows a plan view of a conventional DFB laser
  • Figure 2 schematically illustrates a side view of an example of the DFB laser described herein;
  • Figure 3 schematically illustrates a cross-section through an example of the DFB laser described herein;
  • Figure 4 schematically illustrates a plan view of an example of the DFB laser described herein;
  • Figure 5 schematically illustrates a plot of intensity versus wavelength for a DFB laser
  • Figures 6(a)-(d) illustrate the peaks of the DFB laser described herein under different relative offsets between the first and second waveguide sections.
  • one form of DFB laser comprises a semiconductor block which has a front face 201 , a rear face 202 opposite to the front face and a laser cavity formed therebetween.
  • the front and rear faces may be cleaved facets. It is preferable that the front and rear facets are aligned parallel to one another.
  • a high-reflection (HR) coating may be applied to the rear facet.
  • the rear facet acts as a rear reflector and the front facet can act as a front reflector.
  • a HR coating or an anti-reflection (AR) coating may be applied to the front face. Light exits the laser cavity at the front face, shown at 203.
  • the laser cavity comprises an active layer 204 interposed between layers of p- and n-type semiconductor material, shown at 205 and 206 respectively.
  • the semiconductor layers are made from InP.
  • other semiconductor materials such as GaAs, may be used.
  • the material forming the cavity may be selectively doped in the region of the p- and n-type layers 205, 206.
  • Layers 204, 205 and 206 are defined in a substrate 207.
  • the waveguide 208 of the laser comprises a material with a refractive index n greater than that of the substrate. Light is emitted from the end of the waveguide at the front face of the laser.
  • the waveguide is a ridge waveguide.
  • a ridge waveguide may be created by etching parallel trenches in the material either side of the waveguide to create an isolated projecting strip, typically less than 10 pm wide and several hundred pm long.
  • a material with a lower refractive index than the waveguide material can be deposited at the sides of the ridge to guide injected current into the ridge.
  • the ridge may be surrounded by air on the three sides that are not in contact with the substrate beneath the waveguide.
  • the ridge may also be coated with gold to provide electrical contact and to assist heat removal from the ridge when it is producing light.
  • the waveguide comprises a Bragg grating 209.
  • the Bragg grating may be positioned between the waveguide ridge 208 and the p-lnP layer 205.
  • the Bragg grating can be positioned under the active region, i.e. in the n-doped layer 206.
  • the Bragg grating comprises a series of parallel elements 210 of regular physical spacing, A std , along an axis F. Each of the elements extends orthogonally to the axis.
  • the parallel elements extend across the width of the waveguide.
  • the width of the waveguide w is measured parallel to the elements.
  • the grating Kappa*L is preferably between 0.7 to 3.0.
  • the waveguide 208 comprises a first section L1 and a second section L2.
  • the first waveguide section L1 comprises a first subset of the elements 210 and extends along a first direction Di.
  • the second waveguide section L2, which is optically coupled to the first waveguide section comprises a second subset of the elements 210 and extends along a second direction D2 offset to the first direction by angle Q.
  • the axis F is parallel to the first direction Di and the first direction is orthogonal to both the front reflector 201 and the rear reflector 202.
  • the physical pitch of the Bragg grating in the waveguide sections is the same along the whole waveguide.
  • the first and second waveguide sections have different effective pitches, A ef r, for light travelling along the waveguide from the rear face towards the front face.
  • the first section of the waveguide is straight (i.e. aligned with the length of the cavity, perpendicular to the width of the waveguide) and the second section is offset at an angle Q relative to the first section.
  • the physical grating pitch A std measured parallel to the cavity length is proportional to A/n eff , where l is the lasing wavelength and n eff is the effective refractive index of the waveguide.
  • Angling the waveguide section L2 increases the path length of light travelling between the elements of the Bragg grating. Therefore, the effective pitch of the Bragg grating in the second section, A ang , is larger than the physical pitch, which in this case where the first waveguide section is straight is equal to /W
  • the first, straight section of the waveguide with grating pitch A std corresponds to a Bragg grating wavelength lo .
  • the effective pitch of the first waveguide section is less than the effective pitch of the second waveguide section.
  • the physical pitch of the waveguide has a constant value of A std .
  • the elements of the Bragg grating are arranged across the width of the waveguide and the first waveguide section is aligned with the length of the cavity (i.e. the first waveguide section is straight).
  • the second waveguide section is angled relative to the length of the cavity.
  • the elements extend perpendicular to the length of the cavity.
  • the rear reflector is planar and the length of the cavity is measured in a direction perpendicular to the rear reflector (along axis F in Figure 4).
  • a DFB laser promotes optical intensification at at a first lower wavelength peak 501 and a first higher wavelength peak 502, a second lower wavelength peak 503 and a second higher wavelength peak 504. These two sets of two peaks correspond to first and second lasing modes, with wavelengths li and l2 respectively.
  • the first waveguide promotes optical intensification at a first lower wavelength peak and a first higher wavelength peak
  • the second waveguide promotes optical intensification at a second lower wavelength peak and a second higher wavelength peak.
  • the peaks are separated, as in a standard straight waveguide DFB laser with two lasing modes.
  • angling the second waveguide section relative to the first waveguide section shifts the two sets of peaks closer together in wavelength.
  • the waveguide sections are angled relative to one another such that peaks 502 and 503 overlap in wavelength to produce a peak 505 with high intensity, which realizes a single lasing mode.
  • Figure 6(d) if the angle between the waveguide sections increases further, the peaks 502 and 503 no longer overlap to give a single high-intensity peak.
  • the increase in the effective pitch in the second waveguide section results in a shift of the peaks.
  • a constant physical grating pitch, A s td in the direction of the length of the cavity can be applied to the structure.
  • the DFB laser may lase at the coincident mode/wavelength.
  • the waveguide therefore selectively promotes a preferred lasing mode of the laser.
  • the first section L1 of the waveguide adjacent to the rear reflector 202 is straight (i.e. the first direction Di is parallel to the length of the cavity, which is along axis F in Figure 4) and the second section L2 adjacent to the front reflector 201 is angled relative to the first section (and therefore angled relative to the length of the cavity and axis F).
  • the second section L2 may be straight (i.e. the second direction D2 is parallel to the length of the cavity, which is along axis F in Figure 4) and the first section L1 may be angled relative to the second section (and therefore angled relative to the length of the cavity and axis F).
  • first and second sections may both be angled relative to the axis perpendicular to the elements of the Bragg grating, such that the Bragg grating in the first section has a different effective pitch to the Bragg grating in the second section.
  • the grating along the DFB laser can be uniformly pitched to avoid the need for an expensive and complicated chirped grating. No e-beam grating writing is required.
  • a low-cost holographic grating process can be used to fabricate the uniformly pitched grating.
  • the physical pitch of the grating may be, for example, approximately 300 nm, 200 nm, or 50 nm.
  • the Bragg grating may be an index coupled grating, a gain coupled grating or a complex coupled grating.
  • the layer comprising the waveguide and/or the grating may be fabricated from a p-doped or n-doped semiconductor material.
  • the waveguide for DFB laser can be a buried heterostructure (BH) or a shallow ridge waveguide.
  • the waveguide width may be between approximately 0.5 pm to 3.0 pm.
  • the first section of the waveguide may have a different width to the second section of the waveguide, or the first and second waveguide sections may have the same width.
  • U is preferably between 20% to 80% of L.
  • the first waveguide section may therefore extend along the axis for a length between 20 to 80% of the total length of the first waveguide section plus the second waveguide section along the axis.
  • the angle of offset between the two waveguide sections, Q is between 1 to 8 degrees.
  • the angle of offset can be chosen depending on the application of the laser.
  • the semiconductor layers and the active region of the cavity may be made of InP, GaAs, or another semiconductor material.
  • a two-section waveguide can therefore be used to realize a single-mode DFB laser that is easier to fabricate.
  • the grating along the waveguide has the same pitch (the grating period is constant for the whole waveguide) and there is no need to chirp the grating.
  • the proposed DFB laser breaks the structure symmetry. As a result, it may have a preferred lasing wavelength, reducing the mode-hop.
  • a HR/AR coating can also be applied to the facets to enhance the output power and reduce the structure symmetry further.
  • the laser structure may be integrated with another optically functional structure, for example an electroabsorption modulator (EAM), a Mach-Zehnder modulator, or an amplifier.
  • EAM electroabsorption modulator
  • Mach-Zehnder modulator Mach-Zehnder modulator
  • amplifier amplifier
  • the front face of the laser may be optically coupled to a lens.

Abstract

L'invention concerne un laser ayant un réflecteur arrière, un réflecteur avant et une cavité laser définie entre le réflecteur arrière et le réflecteur avant. La cavité a un guide d'ondes comprenant un réseau de Bragg ayant une série d'éléments parallèles d'espacement physique égal le long d'un axe. Le guide d'ondes comprend une première et une seconde section de guide d'ondes qui sont reliées optiquement l'une à l'autre. La première section comprend un premier sous-ensemble des éléments et s'étend le long d'une première direction. La seconde section de guide d'ondes comprend un second sous-ensemble des éléments et s'étend le long d'une seconde direction décalée par rapport à la première direction.
PCT/EP2020/051565 2020-01-23 2020-01-23 Laser dfb à mode unique WO2021148120A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202080091537.7A CN114930657A (zh) 2020-01-23 2020-01-23 单模dfb激光器
PCT/EP2020/051565 WO2021148120A1 (fr) 2020-01-23 2020-01-23 Laser dfb à mode unique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2020/051565 WO2021148120A1 (fr) 2020-01-23 2020-01-23 Laser dfb à mode unique

Publications (1)

Publication Number Publication Date
WO2021148120A1 true WO2021148120A1 (fr) 2021-07-29

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Application Number Title Priority Date Filing Date
PCT/EP2020/051565 WO2021148120A1 (fr) 2020-01-23 2020-01-23 Laser dfb à mode unique

Country Status (2)

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CN (1) CN114930657A (fr)
WO (1) WO2021148120A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023227189A1 (fr) * 2022-05-23 2023-11-30 Huawei Technologies Co., Ltd. Laser à semi-conducteur incliné

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008675A (en) * 1996-07-31 1999-12-28 Canon Kabushiki Kaisha Polarization-mode selective semiconductor laser with a bending channel stripe, apparatus including the same and optical communication system using the same
US20060165147A1 (en) * 2005-01-21 2006-07-27 Samsung Electronics Co., Ltd. Single mode distributed feedback laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008675A (en) * 1996-07-31 1999-12-28 Canon Kabushiki Kaisha Polarization-mode selective semiconductor laser with a bending channel stripe, apparatus including the same and optical communication system using the same
US20060165147A1 (en) * 2005-01-21 2006-07-27 Samsung Electronics Co., Ltd. Single mode distributed feedback laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EPLER J: "SINGLE MODE INDEX GUIDED DISTRIBUTED FEEDBACK LASER", XEROX DISCLOSURE JOURNAL, XEROX CORPORATION. STAMFORD, CONN, US, vol. 16, no. 4, 1 July 1991 (1991-07-01), pages 265 - 266, XP000225938 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023227189A1 (fr) * 2022-05-23 2023-11-30 Huawei Technologies Co., Ltd. Laser à semi-conducteur incliné

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