WO2022123977A1 - 電圧制御型半導体素子の駆動装置 - Google Patents

電圧制御型半導体素子の駆動装置 Download PDF

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Publication number
WO2022123977A1
WO2022123977A1 PCT/JP2021/040994 JP2021040994W WO2022123977A1 WO 2022123977 A1 WO2022123977 A1 WO 2022123977A1 JP 2021040994 W JP2021040994 W JP 2021040994W WO 2022123977 A1 WO2022123977 A1 WO 2022123977A1
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Prior art keywords
circuit
voltage
short
power supply
supply voltage
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Ceased
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PCT/JP2021/040994
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English (en)
French (fr)
Japanese (ja)
Inventor
正裕 田岡
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Priority to JP2022568114A priority Critical patent/JP7533621B2/ja
Publication of WO2022123977A1 publication Critical patent/WO2022123977A1/ja
Priority to US18/080,374 priority patent/US12341500B2/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H1/00—Details of emergency protective circuit arrangements
    • H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025—Current limitation using field effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/093—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current with timing means

Definitions

  • the present invention relates to a drive device for a voltage-controlled semiconductor element.
  • an inverter device applied to a variable speed device of a motor is provided with a power element that performs power conversion, a drive circuit that controls and drives this power element, a protection circuit, and a control circuit that controls these in an integrated manner.
  • a semiconductor device called an intelligent power module (hereinafter referred to as IPM) in which a power element excluding a control circuit, a drive circuit, and a protection circuit are integrated into one package has been commercialized.
  • a voltage control type semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is used.
  • IGBT Insulated Gate Bipolar Transistor
  • MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • IPM generally has a short-circuit protection circuit that monitors the current flowing through the power element and can protect the power element so that the power element is not destroyed when a short-circuit current flows through the power element.
  • Patent Document 1 As such a short-circuit protection circuit, there is known a technique of limiting the short-circuit current by lowering the gate voltage when the short-circuit current flowing through the power element is detected (see, for example, Patent Document 1).
  • Patent Document 1 when a short-circuit current is detected, the short-circuit detection is canceled only for a predetermined period immediately after the operation start command is input to prevent the occurrence of short-circuit erroneous detection.
  • the short circuit protection circuit In the short circuit protection circuit, the short circuit is detected and the protection circuit operates, and when the gate voltage of the power element is lowered to cut off the current, the gate voltage is gradually lowered. At this time, if noise enters before the gate cutoff is completed, the gate voltage may be temporarily increased and the power element may be turned on again. On the contrary, when the gate cutoff ability is high and the current is cut off from a large current, the gate voltage is lowered below the specified gate voltage at which the protection circuit operates, and after the erroneous cutoff due to this, the power element is turned on again. It may end up. In this case, the power element repeats erroneous interruption at high speed, which causes an excessive surge voltage to continue.
  • the present invention has been made in view of such a point, and provides a drive device for a voltage-controlled semiconductor element capable of suppressing a continuous short circuit caused by a malfunction and suppressing a short circuit peak current flowing at that time.
  • the purpose is to do.
  • one proposal provides a drive device for a voltage-controlled semiconductor element.
  • the drive device of this voltage-controlled semiconductor element has a short-circuit current detection circuit that detects the short-circuit current of the voltage-controlled semiconductor element and a time setting that represents a predetermined length of time when the short-circuit current detection circuit detects the short-circuit current.
  • a timer circuit that outputs a signal and a control that outputs a step-down voltage that is lowered to a voltage lower than the power supply voltage only during the period when the power supply voltage applied to the power supply terminal is received from the timer circuit and the time setting signal is received, as the control power supply voltage. It is equipped with a variable power supply voltage circuit.
  • the drive device for the voltage-controlled semiconductor element having the above configuration has an advantage that a continuous short circuit due to a malfunction is suppressed and a short circuit peak current flowing at that time is suppressed.
  • FIG. 1 is a diagram showing an example of a drive device for a voltage-controlled semiconductor element according to an embodiment of the present invention
  • FIG. 2 is a waveform diagram of a main part showing the operation of the drive device for a voltage-controlled semiconductor element.
  • FIG. 1 shows an IGBT 10 as a voltage-controlled semiconductor element and a control IC (Integrated Circuit) 20 as a drive device for driving the IGBT, and the IGBT 10 and the control IC 20 constitute an IPM. ..
  • the IGBT 10 is configured by combining a main IGBT through which a main current flows and a sense IGBT that divides the current of this main IGBT into a current of about 1 / 10,000 and outputs the current.
  • the sense IGBT has the same structure as the main IGBT and has a smaller size than the main IGBT, the gate and collector are shared with the gate and collector of the main IGBT, and the sense emitter is independent of the emitter of the main IGBT. ing.
  • the IGBT 10 also has an FWD (Free Wheeling Diode) 12 connected in antiparallel to a collector and an emitter. That is, the anode of the FWD 12 is connected to the emitter of the IGBT 10, and the cathode of the FWD 12 is connected to the collector of the IGBT 10.
  • FWD Free Wheeling Diode
  • the control IC 20 has an IN terminal that receives an input signal that turns the IGBT 10 on or off, an AE terminal that outputs an alarm signal, a VCS terminal that receives a power supply voltage VCS, an OUT terminal that outputs a gate voltage Vg that drives the IGBT 10, and a sense current. Has an OC terminal for inputting.
  • the control IC 20 also has a ground potential GND terminal to which the emitter of the IGBT 10 is connected.
  • the control IC 20 has an input signal detection circuit 22 that detects and outputs an input signal, the input of the input signal detection circuit 22 is connected to the IN terminal, and the output of the input signal detection circuit 22 is the first of the predriver 24. It is connected to one input.
  • the output of the predriver 24 is connected to the input of the IGBT drive circuit 26, the soft cutoff circuit 28 and the non-latch-up (hereinafter referred to as NLU) circuit 30, and the output of the IGBT drive circuit 26, the soft cutoff circuit 28 and the NLU circuit 30 is , Is connected to the OUT terminal.
  • the OUT terminal is connected to the gate of the IGBT 10.
  • the IGBT drive circuit 26 outputs a gate voltage Vg that drives the IGBT 10 on or off based on the signal received from the input signal detection circuit 22. That is, when the IGBT drive circuit 26 is driven on, the source current for charging the gate capacitance of the IGBT 10 is output, and when the IGBT 10 is off-driven (cut off), the charge charged in the gate capacitance of the IGBT 10 is extracted.
  • the gate voltage Vg is output.
  • the withdrawal of charge from the gate capacitance is carried out by dividing the withdrawal capacity into two stages. Immediately after receiving the off-drive signal, charge extraction is performed with a low extraction capacity, and charge extraction after a predetermined time is performed with 100% extraction capacity.
  • the soft cutoff circuit 28 outputs a gate voltage Vg that gradually cuts off the IGBT 10 with a pull-out capacity smaller than the pull-out capacity immediately after the cutoff by the IGBT drive circuit 26 when the overcurrent state of the IGBT continues for more than a predetermined time. do.
  • the NLU circuit 30 outputs a gate voltage Vg that suppresses the short-circuit current when a short circuit of the IGBT 10 is detected, and outputs a gate voltage Vg that cuts off the IGBT 10 when the suppression current continues for more than a predetermined time. do.
  • the OC terminal of the control IC 20 is connected to the sense emitter of the IGBT 10.
  • the OC terminal is also connected to one terminal of the sense resistor 32, the other terminal of the sense resistor 32 is connected to one terminal of the sense resistor 34, and the other terminal of the sense resistor 34 is connected to ground. ing.
  • the OC terminal is further connected to the cathode of the Zener diode 36, and the anode of the Zener diode 36 is connected to the ground.
  • the sense resistors 32 and 34 constitute a voltage dividing circuit that converts the sense voltage Vs into a sense voltage Vs by passing a sense current input to the OC terminal and divides the sense voltage Vs.
  • the Zener diode 36 is for protecting the sense voltage Vs from becoming abnormally high due to noise or the like.
  • One terminal of the sense resistor 32 is connected to the non-inverting input terminal of the overcurrent detecting comparator 38, and the inverting input terminal of the overcurrent detecting comparator 38 is connected to the positive electrode terminal of the reference voltage source 40 to be a reference.
  • the negative electrode terminal of the voltage source 40 is connected to the ground.
  • the output terminal of the overcurrent detection comparator 38 is connected to the delay circuit 42.
  • the overcurrent detection comparator 38 compares the sense voltage Vs with the voltage of the reference voltage source 40 corresponding to the overcurrent detection threshold value. When the sense voltage Vs exceeds the overcurrent detection threshold value, the overcurrent detection comparator 38 determines that the overcurrent has been detected, and outputs a high (H) level overcurrent detection signal. This overcurrent detection signal is input to the delay circuit 42 and is delayed for a predetermined time.
  • the output of the delay circuit 42 is connected to the first input of the or circuit 44, and the output of the or circuit 44 is connected to the second input of the predriver 24 and the input of the alarm output circuit 46.
  • the output of the alarm output circuit 46 is connected to the AE terminal.
  • the common connection portion of the sense resistors 32 and 34 is connected to the non-inverting input terminal of the short-circuit detecting comparator 48, and the inverting input terminal of the short-circuit detecting comparator 48 is connected to the positive electrode terminal of the reference voltage source 50.
  • the negative electrode terminal of the reference voltage source 50 is connected to the ground.
  • the output terminal of the short-circuit detection comparator 48 is connected to the delay circuit 52 and the third input of the pre-driver 24.
  • the short circuit detection comparator 48 compares the voltage dividing voltage Vsc of the sense voltage Vs with the voltage of the reference voltage source 50 corresponding to the short circuit detection threshold value Vscth. When the voltage dividing voltage Vsc of the sense voltage Vs exceeds the short-circuit detection threshold Vscth, the short-circuit detection comparator 48 determines that the short-circuit current has been detected, and outputs a high (H) level short-circuit current detection signal.
  • This short-circuit current detection signal is input to the third input of the predriver 24, and is also input to the delay circuit 52 to be delayed by a predetermined delay time tdASC. The output of the delay circuit 52 is connected to the second input of the or circuit 44.
  • the voltage divider circuit shared with the sense resistors 32 and 34 for overcurrent detection, the short-circuit detection comparator 48, and the reference voltage source 50 constitute the short-circuit current detection circuit 51.
  • the control IC 20 also has a control power supply voltage variable circuit 54 capable of varying the control power supply voltage inside the control IC 20.
  • the control power supply voltage variable circuit 54 includes MOSFETs 56 and 58 constituting switch elements, inverter circuits 60 and 62, and a buck converter circuit 64.
  • the source of the MOSFETs 56 and 58 is connected to the VCS terminal, the drain of the MOSFET 56 is connected to the output of the control power supply voltage variable circuit 54, and the drain of the MOSFET 58 is connected to the input of the buck converter circuit 64.
  • the output of the buck converter circuit 64 is connected to the output of the control power supply voltage variable circuit 54.
  • the input of the inverter circuit 60 is connected to the output of the timer circuit 66, and the input of the timer circuit 66 is connected to the output of the short circuit detection comparator 48.
  • the output of the inverter circuit 60 is connected to the gate of the MOSFET 56 and the input of the inverter circuit 62, and the output of the inverter circuit 62 is connected to the gate of the MOSFET 58.
  • the step-down converter circuit 64 has a function of stepping down the power supply voltage VCS of the VCS terminal.
  • the control power supply voltage variable circuit 54 lowers the control power supply voltage Vcc from a voltage substantially equal to the power supply voltage VCS to the voltage output by the step-down converter circuit 64.
  • Set the time Output the time setting signal is the period from when the short-circuit current detection circuit 51 detects the short-circuit current and starts to decrease the gate voltage Vg until the gate voltage Vg or the sense voltage Vs becomes 0 when the short-circuit current is detected again.
  • a pulse width time tPW of a predetermined length longer than that is set.
  • the timer circuit 66 When the short-circuit current detection circuit 51 does not detect a short circuit, the timer circuit 66 outputs an H level signal, and after the short-circuit current detection circuit 51 detects the short circuit, the pulse width time tPW is low (L). Outputs the level time setting signal.
  • the control power supply voltage variable circuit 54 When the short-circuit current detection circuit 51 does not detect a short circuit, the control power supply voltage variable circuit 54 outputs the power supply voltage VCS of the VCS terminal as the control power supply voltage Vcc by turning on the MOSFET 56 and turning off the MOSFET 58.
  • the MOSFET 56 When the short-circuit current detection circuit 51 detects a short circuit, the MOSFET 56 is turned off and the MOSFET 58 is turned on during the period of the pulse width time tPW set by the timer circuit 66.
  • the control power supply voltage variable circuit 54 outputs the voltage stepped down from the power supply voltage VCS by the step-down converter circuit 64 as the control power supply voltage Vcc during the period of the pulse width time tPW.
  • the control IC 20 also has a power supply voltage drop detection protection circuit 68.
  • the power supply voltage drop detection protection circuit 68 includes resistors 70, 72, 74, switches 76, 78, a comparator 80, a reference voltage source 82, and a delay circuit 84.
  • One terminal of the resistor 70 is connected to the VCS terminal, the other terminal of the resistor 70 is connected to one terminal of the resistor 72, and the other terminal of the resistor 72 is connected to one terminal of the resistor 74.
  • the other terminal of the resistor 74 is connected to ground.
  • the common connection of the resistors 70 and 72 is connected to the inverting input terminal of the comparator 80 via the switch 76, and the common connection of the resistors 72 and 74 is the inverting input terminal of the comparator 80 via the switch 78. It is connected to the.
  • the non-inverting input terminal of the comparator 80 is connected to the positive electrode terminal of the reference voltage source 82, and the negative electrode terminal of the reference voltage source 82 is connected to the ground.
  • the output terminal of the comparator 80 is connected to the input of the delay circuit 84, and the output of the delay circuit 84 is connected to the control terminal of the switches 76 and 78 and the third input of the or circuit 44.
  • the voltage of the reference voltage source 82 is set to a voltage at which the circuit inside the control IC 20 does not operate normally due to a decrease in the power supply voltage VCS of the VCS terminal.
  • the power supply voltage drop detection protection circuit 68 when the voltage obtained by dividing the power supply voltage VCS supplied from the outside by the resistors 70, 72, 74 becomes lower than the voltage of the reference voltage source 82, the comparator 80 outputs an H level signal. Output. When the time for outputting the H level signal exceeds the time set by the delay circuit 84, the delay circuit 84 outputs the H level signal. This H level signal switches the switches 76 and 78, and switches the voltage input to the comparator 80 to a voltage further divided. As a result, the power supply voltage drop detection protection circuit 68 has a hysteresis characteristic that detects a drop in the power supply voltage VCS and maintains the state when the state continues for a predetermined time.
  • this control IC 20 In normal operation, when an input signal for turning on / off the IGBT 10 is input to the IN terminal, the input signal is input to the IGBT drive circuit 26 via the input signal detection circuit 22 and the predriver 24.
  • the IGBT drive circuit 26 When the IGBT drive circuit 26 is turned on, the source current for charging the gate capacitance of the IGBT is output, and when the IGBT 10 is turned off (cut off), the gate is such that the charge charged in the gate capacitance of the IGBT 10 is extracted.
  • the voltage Vg is output.
  • the overcurrent detection comparator 38 When the sense voltage Vs corresponding to the sense current exceeds the overcurrent detection threshold value of the reference voltage source 40, the overcurrent detection comparator 38 outputs an H level overcurrent detection signal. If the overcurrent detection continues beyond the delay time set by the delay circuit 42, the delay circuit 42 outputs an H-level signal. This signal is input to the predriver 24 and the alarm output circuit 46 via the or circuit 44.
  • the pre-driver 24 instructs the soft cutoff circuit 28 to pull out the charge charged in the gate capacitance of the IGBT 10 with a pull-out capacity lower than the pull-out capacity of the IGBT drive circuit 26, and gradually shuts off the IGBT 10.
  • the alarm output circuit 46 receives the notification of the occurrence of an abnormality from the or circuit 44, the alarm output circuit 46 notifies the outside of the occurrence of the abnormality via the AE terminal.
  • FIG. 2 shows, from the top, the voltage divider voltage Vsc of the sense voltage Vs, the control power supply voltage Vcc output by the control power supply voltage variable circuit 54, the gate voltage Vg, and the collector current Ic.
  • the gate voltage Vg rises.
  • the collector current Ic starts to flow, and the voltage dividing voltage Vsc of the sense voltage Vs rises.
  • the short-circuit detection comparator 48 when the voltage dividing voltage Vsc exceeds the short-circuit detection threshold Vscth, the short-circuit detection comparator 48 outputs an H-level short-circuit current detection signal.
  • This short-circuit current detection signal is first notified to the pre-driver 24, and the NLU circuit 30 is operated to output a gate voltage Vg that suppresses the short-circuit current.
  • the timer circuit 66 outputs an H level time setting signal during normal operation of the control IC 20.
  • the control power supply voltage variable circuit 54 since the inverter circuit 60 outputs the L level signal and the inverter circuit 62 outputs the H level signal, the MOSFET 56 is on and the MOSFET 58 is off. As a result, the control power supply voltage variable circuit 54 outputs the input power supply voltage VCS as the control power supply voltage Vcc.
  • the timer circuit 66 when the timer circuit 66 receives the short-circuit current detection signal from the short-circuit detection comparator 48, it outputs the L-level time setting signal for the period of the pulse width time tPW.
  • the control power supply voltage variable circuit 54 since the inverter circuit 60 outputs the H level signal and the inverter circuit 62 outputs the L level signal, the MOSFET 56 is turned off and the MOSFET 58 is turned on.
  • the control power supply voltage variable circuit 54 outputs the voltage stepped down from the power supply voltage VCS to the step-down level by the step-down converter circuit 64 as the control power supply voltage Vcc.
  • the gate voltage Vg is lowered from the charging voltage Vgch1 at the time of ON to the charging voltage Vgch2.
  • the gate voltage Vg can be lowered from the low charge voltage Vgch2 in a short time, so that stable protection operation becomes possible.
  • the peak current IcP1 of the collector current Ic can also be reduced to the peak current IcP2.
  • the delay circuit 52 outputs an H level signal. This signal is input to the predriver 24 and the alarm output circuit 46 via the or circuit 44.
  • the predriver 24 instructs the soft cutoff circuit 28 to cut off the soft, and the alarm output circuit 46 notifies the outside of the occurrence of an abnormality via the AE terminal.
  • the gate voltage Vg gradually decreases from the gate voltage VgNLU held by the NLU circuit 30, and the IGBT 10 is gradually cut off.
  • the step-down level of the control power supply voltage Vcc by the buck converter circuit 64 is set higher than the protection threshold by the reference voltage source 82 of the power supply voltage drop detection protection circuit 68.
  • the step-down level by the step-down converter circuit 64 can be set to be equal to or lower than the protection threshold value by the reference voltage source 82. In this case, when the gate voltage Vg drops to the charging voltage Vgch2 due to the stepping down of the control power supply voltage Vcc, the short circuit cannot be prevented again, the short circuit protection is surely performed by the power supply voltage drop detection protection circuit 68. Can be done.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
PCT/JP2021/040994 2020-12-11 2021-11-08 電圧制御型半導体素子の駆動装置 Ceased WO2022123977A1 (ja)

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JP2022568114A JP7533621B2 (ja) 2020-12-11 2021-11-08 電圧制御型半導体素子の駆動装置
US18/080,374 US12341500B2 (en) 2020-12-11 2022-12-13 Drive device for voltage-controlled semiconductor element

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JP2020206307 2020-12-11

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