WO2022111709A1 - 散热装置和电子设备 - Google Patents

散热装置和电子设备 Download PDF

Info

Publication number
WO2022111709A1
WO2022111709A1 PCT/CN2021/134155 CN2021134155W WO2022111709A1 WO 2022111709 A1 WO2022111709 A1 WO 2022111709A1 CN 2021134155 W CN2021134155 W CN 2021134155W WO 2022111709 A1 WO2022111709 A1 WO 2022111709A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat
layer
thermally conductive
circuit board
heat dissipation
Prior art date
Application number
PCT/CN2021/134155
Other languages
English (en)
French (fr)
Inventor
李岚
靳林芳
胡锦炎
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to US18/254,737 priority Critical patent/US20240008167A1/en
Priority to EP21897209.9A priority patent/EP4236642A4/en
Publication of WO2022111709A1 publication Critical patent/WO2022111709A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/20—Cooling means
    • G06F1/203—Cooling means for portable computers, e.g. for laptops
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H05K1/144—Stacked arrangements of planar printed circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures
    • H05K7/20136—Forced ventilation, e.g. by fans
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2029—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures
    • H05K7/20336—Heat pipes, e.g. wicks or capillary pumps
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • H05K7/205—Heat-dissipating body thermally connected to heat generating element via thermal paths through printed circuit board [PCB]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/04—Assemblies of printed circuits
    • H05K2201/042—Stacked spaced PCBs; Planar parts of folded flexible circuits having mounted components in between or spaced from each other

Definitions

  • the present application relates to the technical field of circuit boards, and in particular, to a heat sink and electronic equipment.
  • electronic equipment can be provided with a heat dissipation device, and the heat dissipation device includes a plurality of circuit boards arranged in a stack, so that a variety of functional devices can be mounted on different circuit boards, so as to improve device integration.
  • the present application provides a heat dissipation device and electronic equipment.
  • the heat dissipation device has lower heat flux density, higher heat dissipation efficiency and better working reliability.
  • the present application provides a heat dissipation device, which includes a first circuit board, a second circuit board, a support column, a main heating device, and a heat-conducting component.
  • the first circuit board includes a first thermal conduction layer, a second thermal conduction layer and a thermal conduction structure connected between the first thermal conduction layer and the second thermal conduction layer, and the first thermal conduction layer is used for connecting with the heat sink.
  • the second circuit board is located on one side of the first circuit board and is spaced apart from the first circuit board.
  • the second circuit board includes a third thermally conductive layer, a fourth thermally conductive layer, and a thermally conductive structure connected between the third thermally conductive layer and the fourth thermally conductive layer.
  • the support column is connected between the first circuit board and the second circuit board to form an air layer between the first circuit board and the second circuit board.
  • the main heating element is mounted on the second circuit board, and the heat dissipation pins of the main heating element are connected to the fourth heat conducting layer.
  • the heat-conducting component is connected between the first heat-conducting layer and the second heat-conducting layer of the second circuit board.
  • the heat generated by the main heating device during operation can be first transferred to the fourth thermal conductive layer through the heat dissipation pins, then transferred to the thermal conductive component through the second thermal conductive structure and the third thermal conductive layer, and then transferred to the thermal conductive component through the thermal conductive component.
  • the two heat-conducting layers are transferred to the radiator through the first heat-conducting structure and the first heat-conducting layer of the first circuit board, so as to realize the heat dissipation of the main heating device.
  • the fourth thermally conductive layer, the second thermally conductive structure, the third thermally conductive layer, the thermally conductive component, the second thermally conductive layer, the first thermally conductive structure, the first thermally conductive layer, and the heat sink of the second circuit board form a three-dimensional heat dissipation topology network.
  • the network can receive the heat generated by the main heating device through the heat dissipation pins, realize the heat dissipation of the main heating device, reduce the junction temperature of the main heating device, effectively solve the heat dissipation problem of the main heating device, and improve the working efficiency of the main heating device. service life, so that the heat density of the heat dissipation device is small, the heat dissipation efficiency is high, and the work reliability is better.
  • the first heat-conducting layer and the second heat-conducting layer are arranged at intervals along the thickness direction of the first circuit board, and the second heat-conducting layer is located on the side of the first circuit board close to the second circuit board.
  • the third heat-conducting layer and the fourth heat-conducting layer are arranged at intervals along the thickness direction of the second circuit board, and the fourth heat-conducting layer is located on the side of the second circuit board facing away from the first circuit board.
  • the main heating element is installed on the side of the second circuit board away from the first circuit board, and the heat-conducting component is located in the air layer.
  • a first circuit board and a second circuit board are separated between the main heating device and the radiator, and the heat generated by the main heating device can be effectively thermally diffused through the three-dimensional heat dissipation topology network, which can reduce the The junction temperature of the main heating device solves the heat dissipation problem of the main heating device and improves the working efficiency and service life of the main heating device.
  • the main heating device and the second heat conduction structure at least partially overlap, so as to shorten the heat transfer of the main heating device to the third heat conduction layer through the fourth heat conduction layer and the second heat conduction structure.
  • the heat dissipation path of the layer helps to improve the heat dissipation efficiency of the main heating device.
  • the heat dissipation device includes a solder layer, and the solder layer is electrically connected between the heat dissipation pins of the main heating device and the fourth heat conducting layer.
  • the heat dissipation device includes a solder layer and a wire, the solder layer is connected between the heat dissipation pins of the main heating device and the heat conduction layer of the second circuit board, and the wire is electrically connected between the main heat generation device and the fourth heat conduction layer between.
  • the orthographic projection of the main heating element on the first circuit board is located in the first circuit board. That is, in the thickness direction of the first circuit board, the main heat generating device overlaps with the first circuit board.
  • the thermally conductive component and the second thermally conductive structure at least partially overlap, so as to shorten the heat transfer of the main heating element through the fourth thermally conductive layer, the second thermally conductive structure and the third thermally conductive layer.
  • the heat dissipation path to the thermally conductive component helps to improve the heat dissipation efficiency of the main heating device.
  • the thermally conductive component and the thermally conductive structure of the first circuit board at least partially overlap, so as to shorten the heat of the main heating device through the thermally conductive component, the second thermally conductive layer, and the first thermally conductive structure.
  • the heat dissipation path transmitted to the first heat conducting layer helps to improve the heat dissipation efficiency of the main heating device.
  • the thermally conductive assembly includes two thermally conductive blocks and thermal interface material layers, one thermally conductive block is connected to the second thermally conductive layer, the other thermally conductive block is connected to the third thermally conductive layer, and the thermal interface material layer is connected to the two thermally conductive blocks. between.
  • the thermal interface material can fill the air gap and tolerance redundancy between the two thermally conductive blocks, reduce the interface thermal resistance between the two thermally conductive blocks, and improve the heat transfer efficiency between the two thermally conductive blocks.
  • the thermally conductive component includes a thermally conductive column, and the thermally conductive column is connected between the second thermally conductive layer and the third thermally conductive layer.
  • the heat dissipation device further includes a first component, and the first component is mounted on the first circuit board or the second circuit board;
  • the heat conduction column and the support column are made of metal materials and are in a grounded state;
  • thermoelectric column There is one heat conducting column, one heat conducting column and one supporting column are respectively located on both sides of the first component;
  • the multiple thermally conductive pillars and the supporting pillars are arranged around the first component at intervals, or, the multiple thermally conductive pillars and the supporting pillars are fixed and enclosed with each other to form a metal frame, and the first component is located on the side of the metal frame. inside.
  • the heat-conducting column and the support column can form an electromagnetic shielding structure of the first component, which has a certain electromagnetic shielding effect, which can prevent the electromagnetic interference of the external device to the first component, or prevent the first component from causing electromagnetic interference to other components.
  • the first component includes one or more of an antenna module, a front-end module, a modem, a signal transceiver, a memory, a flash memory, a connector, a functional sensor, a resistor, a capacitor, an inductor, or a crystal oscillator.
  • the thermally conductive component includes a package device, the packaged component of the thermally conductive component is provided with a heat dissipation channel, and the heat dissipation channel of the packaged component of the thermally conductive component is connected between the second thermally conductive layer and the third thermally conductive layer.
  • the fourth heat conduction layer, the second heat conduction structure and the third heat conduction layer of the second circuit board, the heat dissipation channel, the second heat conduction layer, the first heat conduction structure and the first heat conduction layer of the packaged device of the heat conduction component are used.
  • the thermal conduction layer and the heat sink together form a three-dimensional heat dissipation topology network, which helps to improve the integration degree of the heat dissipation device.
  • the packaging device of the thermally conductive assembly includes:
  • the carrier plate, the inside of the carrier plate is provided with a heat sink;
  • the heat dissipation pin is located on one side of the carrier board and is connected with the heat sink of the carrier board;
  • the heat dissipation column is located on the other side of the carrier board and is connected with the heat sink of the carrier board;
  • packaging layer covering the carrier board and the heat dissipation column, and the heat dissipation column is exposed relative to the packaging layer;
  • the heat dissipation pin, the heat dissipation member of the carrier board and the heat dissipation column form a heat dissipation channel of the packaged device of the heat conduction assembly.
  • the packaging device of the thermally conductive assembly includes:
  • the carrier plate, the inside of the carrier plate is provided with a heat sink;
  • the heat dissipation pin is located on one side of the carrier board and is connected with the heat sink of the carrier board;
  • the heat dissipation column is located on the other side of the carrier board and is connected with the heat sink of the carrier board;
  • the packaging layer covers the carrier board and the heat dissipation column, and the heat dissipation column is exposed relative to the packaging layer;
  • the heat dissipation pin, the heat dissipation member of the carrier board, the heat dissipation column and the auxiliary heat dissipation layer form the heat dissipation channel of the packaged device of the heat conduction component.
  • the thermally conductive assembly further includes a thermally conductive block
  • the number of thermally conductive blocks is one, and the thermally conductive block is connected between the heat dissipation channel of the packaged device of the thermally conductive component and the second thermally conductive layer, or the thermally conductive block is connected between the heat dissipation channel of the packaged device of the thermally conductive component and the third thermally conductive layer;
  • heat-conducting blocks There are two heat-conducting blocks, one is connected between the heat-dissipating channel and the second heat-conducting layer of the encapsulation device of the heat-conducting component, and the other heat-conducting block is connected between the heat-dissipating channel and the third heat-conducting layer of the encapsulating component of the heat-conducting component.
  • the thermally conductive component further includes a thermal interface material layer, and the thermal interface material layer is connected between the thermally conductive block and the heat dissipation channel of the packaged device of the thermally conductive component.
  • the thermal interface material can fill the air gap and tolerance redundancy between the thermally conductive block and the heat dissipation channel of the packaged device of the thermally conductive assembly, thereby reducing the interface thermal resistance between the two and improving the heat transfer efficiency between the two.
  • the circuit board stack structure further includes a connection layer, and the connection layer is made of solder, or the connection layer is made of thermal interface material, or the connection layer is made of thermal conductive glue.
  • the connecting layer has one layer, and the connecting layer is connected between the heat-conducting component and the second heat-conducting layer, or the connecting layer is connected between the heat-conducting component and the third heat-conducting layer;
  • the connecting layer has two layers, one connecting layer is connected between the heat-conducting component and the second heat-conducting layer, and the other connecting layer is connected between the heat-conducting component and the third heat-conducting layer.
  • the heat conduction structure of the first circuit board includes a chip, the chip of the first heat conduction structure is provided with a heat dissipation channel, and the heat dissipation channel of the chip of the first heat conduction structure is connected to the first heat conduction layer and the second heat conduction layer of the first circuit board. between the thermally conductive layers.
  • the fourth heat conduction layer, the second heat conduction structure and the third heat conduction layer of the second circuit board, the heat conduction component, the second heat conduction layer of the first circuit board, and the chip of the first heat conduction structure are used to dissipate heat.
  • the channel, the first heat conducting layer and the heat sink together form a three-dimensional heat dissipation topology network, which helps to improve the area utilization rate of the first circuit board and improve the integration degree of the heat dissipation device.
  • the chip of the first circuit board includes:
  • the surface heat conduction layer, the surface heat conduction layer is located on one side of the wafer layer and connected with the wafer layer;
  • soldering feet are located on the other side of the wafer layer and are connected to the wafer layer;
  • packaging layer covers the wafer layer, the surface heat conduction layer and the solder feet, and the surface heat conduction layer and the solder feet are exposed relative to the packaging layer;
  • the surface heat conduction layer, the wafer layer and the solder fillet form a heat dissipation channel of the chip of the first circuit board.
  • the wafer layer is made of semiconductor materials such as silicon, gallium nitride or silicon carbide.
  • the semiconductor material has good thermal conductivity, which is conducive to the high-density integration of high thermal conductivity materials in the heat dissipation device and effectively reduces the thermal resistance of the three-dimensional heat dissipation topology network. .
  • the second heat conduction structure includes a chip, the chip of the second circuit board is provided with a heat dissipation channel, and the heat dissipation channel of the chip of the second circuit board is connected between the third heat conduction layer and the second heat conduction layer.
  • the fourth heat conduction layer of the second circuit board, the heat dissipation channel and the third heat conduction layer of the chip of the second heat conduction structure, the heat conduction component, the second heat conduction layer of the first circuit board, the first heat conduction layer and the first heat conduction layer are used.
  • the structure, the first heat conducting layer and the heat sink together form a three-dimensional heat dissipation topology network, which helps to improve the area utilization rate of the second circuit board and improve the integration degree of the heat dissipation device.
  • the chip of the second circuit board includes:
  • the surface heat conduction layer, the surface heat conduction layer is located on one side of the wafer layer and connected with the wafer layer;
  • soldering feet are located on the other side of the wafer layer and are connected to the wafer layer;
  • packaging layer covers the wafer layer, the surface heat conduction layer and the solder feet, and the surface heat conduction layer and the solder feet are exposed relative to the packaging layer;
  • the surface heat conduction layer, the wafer layer and the solder fillet form a heat dissipation channel of the chip of the second circuit board.
  • the wafer layer is made of semiconductor materials such as silicon, gallium nitride or silicon carbide.
  • the semiconductor material has good thermal conductivity, which is conducive to the high-density integration of high thermal conductivity materials in the heat dissipation device and effectively reduces the thermal resistance of the three-dimensional heat dissipation topology network. .
  • the main heating device is a multimedia application processing device, a system-on-chip, a central processing unit, a power management device or a radio frequency amplifier device.
  • the heat dissipation device further includes a flexible circuit board, and the flexible circuit board is electrically connected between the first circuit board and the second circuit board, so as to realize the communication connection between the first circuit board and the second circuit board.
  • the present application provides an electronic device, comprising a heat sink and any of the above-mentioned heat dissipation devices, wherein the heat sink is connected to a first heat conducting layer of a first circuit board.
  • the electronic device further includes a heat transfer member, and the heat transfer member is connected between the heat sink and the first heat conducting layer of the first circuit board, so as to realize heat transfer between the heat sink and the first heat conducting layer.
  • the heat transfer member and the first heat conducting structure at least partially overlap, so as to shorten the heat transfer to the heat transfer through the second heat conducting layer, the first heat conducting structure and the first heat conducting layer.
  • the heat dissipation path of the component is improved, and the heat dissipation efficiency of the heat-generating component is improved.
  • the heat transfer member includes a heat transfer block, and the heat transfer block is connected between the first heat conducting layer and the heat sink.
  • the heat transfer member includes a package device, the package device of the heat transfer member is provided with a heat dissipation channel, and the heat dissipation channel of the package device of the heat transfer member is connected between the heat sink and the first heat conducting layer.
  • the fourth thermal conduction layer, the second thermal conduction structure and the third thermal conduction layer, the thermal conduction component, the second thermal conduction layer, the first thermal conduction structure and the first thermal conduction layer, and the heat conduction member of the second circuit board are used.
  • the heat dissipation channel of the packaged device and the heat sink together form a three-dimensional heat dissipation topology network, which helps to improve the integration degree of electronic equipment.
  • the encapsulation device of the heat transfer member includes:
  • the carrier plate, the inside of the carrier plate is provided with a heat sink;
  • the heat dissipation pin is located on one side of the carrier board and is connected with the heat sink of the carrier board;
  • the heat dissipation column is located on the other side of the carrier board and is connected with the heat sink of the carrier board;
  • packaging layer covering the carrier board and the heat dissipation column, and the heat dissipation column is exposed relative to the packaging layer;
  • the heat-dissipating pins, the heat-dissipating members and the heat-dissipating columns of the carrier plate form a heat-dissipating channel of the packaged device of the heat-transferring member.
  • the encapsulation device of the heat transfer member includes:
  • the carrier plate, the inside of the carrier plate is provided with a heat sink;
  • the heat dissipation pin is located on one side of the carrier board and is connected with the heat sink of the carrier board;
  • the heat dissipation column is located on the other side of the carrier board and is connected with the heat sink of the carrier board;
  • the packaging layer covers the carrier board and the heat dissipation column, and the heat dissipation column is exposed relative to the packaging layer;
  • the heat dissipation pin, the heat dissipation member of the carrier board, the heat dissipation column and the auxiliary heat dissipation layer form a heat dissipation channel of the packaged device of the heat transfer member.
  • the circuit board stack structure further includes a heat transfer layer, and the heat transfer layer is made of solder, or the heat transfer layer is made of a thermal interface material, or the heat transfer layer is made of a thermally conductive adhesive;
  • the heat transfer layer has one layer, and the heat transfer layer is connected between the heat transfer member and the first heat conduction layer of the first circuit board, or the heat transfer layer is connected between the heat transfer member and the radiator;
  • the heat transfer layer has two layers, one heat transfer layer is connected between the heat transfer member and the first heat conduction layer of the first circuit board, and the other heat transfer layer is connected between the heat transfer member and the heat sink.
  • the electronic device further includes an auxiliary heat transfer layer, the auxiliary heat transfer layer is made of a thermal interface material, and the auxiliary heat transfer layer is connected between the heat sink and the first heat conducting layer.
  • the thermal interface material can fill the air gap and tolerance redundancy between the heat sink and the first heat conducting layer, reduce the interface thermal resistance between the two, and improve the heat transfer efficiency between the two.
  • the radiator is a middle frame, a graphite film, a graphene film, a thermally conductive metal film, a heat pipe radiator, a steam vapor chamber radiator or a fan.
  • FIG. 1 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • Fig. 2 is the partial exploded structure schematic diagram of the electronic device shown in Fig. 1;
  • Fig. 3 is the structural representation of the middle frame of the housing in the electronic device shown in Fig. 2;
  • Fig. 4 is the structural representation of the middle frame shown in Fig. 3 under another angle;
  • FIG. 5 is a schematic diagram of the assembly structure of the middle frame, battery, speaker module, camera module and heat sink of the housing in the electronic device shown in FIG. 2;
  • FIG. 6 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under an embodiment
  • Fig. 7 is a partial cross-sectional structural schematic diagram of the structure shown in Fig. 5 cut along the I-I direction under another embodiment
  • FIG. 8 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under the third embodiment
  • Fig. 9 is a partial cross-sectional structural schematic diagram of the structure shown in Fig. 5 cut along the I-I direction under the fourth embodiment;
  • Fig. 10 is a partial cross-sectional structural schematic diagram of the structure shown in Fig. 5 cut along the I-I direction under the fifth embodiment;
  • Fig. 11 is a partial cross-sectional structural schematic diagram of the structure shown in Fig. 5 cut along the I-I direction under the sixth embodiment;
  • FIG. 12 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under the seventh embodiment
  • FIG. 13 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under the eighth embodiment
  • FIG. 14 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under the ninth embodiment
  • Fig. 15 is a partial cross-sectional structural schematic diagram of the structure shown in Fig. 5 cut along the I-I direction under the tenth embodiment
  • FIG. 16 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under the eleventh embodiment
  • FIG. 17 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under the twelfth embodiment
  • Fig. 18 is a partial structural schematic diagram of the orthographic projection of the thermally conductive component and the first component on the bottom surface of the first circuit board in an embodiment in the structure shown in Fig. 17;
  • Fig. 19 is a partial structural schematic diagram of the orthographic projection of the thermally conductive component and the first component on the bottom surface of the first circuit board under another embodiment in the structure shown in Fig. 17;
  • Fig. 20 is a partial structural schematic diagram of the orthographic projection of the thermally conductive component and the first component on the bottom surface of the first circuit board in the third embodiment in the structure shown in Fig. 17;
  • Figure 21 is a partial cross-sectional structural schematic diagram of the structure shown in Figure 5 cut along the I-I direction under the thirteenth embodiment
  • Figure 22 is a partial cross-sectional structural schematic diagram of the structure shown in Figure 5 cut along the I-I direction under the fourteenth embodiment
  • Figure 23 is a partial cross-sectional structural schematic diagram of the structure shown in Figure 5 cut along the I-I direction under the fifteenth embodiment
  • FIG. 24 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the sixteenth embodiment.
  • FIG. 1 is a schematic structural diagram of an electronic device 100 provided by an embodiment of the present application
  • FIG. 2 is a partially exploded structural schematic diagram of the electronic device 100 shown in FIG. 1
  • the width direction of the electronic device 100 is defined as the X-axis direction
  • the length direction of the electronic device 100 is defined as the Y-axis direction
  • the height direction of the electronic device 100 is defined as the Z-axis direction
  • the electronic device 100 is defined as the Z-axis direction.
  • the height direction (ie, the Z-axis direction) of the electronic device 100 is perpendicular to the width direction (ie, the X-axis direction) and the length direction (ie, the Y-axis direction) of the electronic device 100 .
  • the electronic device 100 may be an electronic product such as a mobile phone, a tablet computer, a car device, a multimedia player, an e-book reader, a notebook computer, a point of sales terminal (point of sales terminal, POS machine for short) car device or a wearable device.
  • the wearable device may be a smart bracelet, a smart watch, augmented reality (AR) glasses, virtual reality (virtual reality, VR) glasses, and the like.
  • AR augmented reality
  • VR virtual reality
  • the electronic device 100 includes a casing 110 , a screen 120 , a battery 130 , a speaker module 140 , a camera module 150 and a heat sink 160 .
  • the casing 110 is provided with a sound outlet 111 .
  • the screen 120 is mounted on the casing 110 and is enclosed with the casing 110 to form an inner cavity (not shown in the figure).
  • the inner cavity of the whole machine is communicated with the sound outlet 111 .
  • the battery 130 , the speaker module 140 , the camera module 150 and the cooling device 160 are all installed in the inner cavity of the whole machine.
  • the battery 130 can supply power to the screen 120 , the speaker module 140 , the camera module 150 and the heat sink 160 .
  • the speaker module 140 is capable of vibrating and producing sound, and the sound is diffused into the external environment through the sound outlet 111 to realize the sound production of the electronic device 100 .
  • the camera module 150 can collect light outside the electronic device 100 and form corresponding image data. It should be understood that, in the embodiments of the present application, a certain component or module is installed in the inner cavity of the whole machine, which does not mean that the component or module must be all located in the overall inner cavity, and part or all of the component or module is located in the whole machine. Inner cavity is available.
  • the casing 110 includes a middle frame 112 and a rear cover 113 .
  • the sound outlet 111 is provided in the middle frame 112 .
  • the back cover 113 is provided with an escape hole 114 , and the escape hole 114 penetrates the back cover 113 along the thickness direction of the back cover 113 .
  • the back cover 113 is fixed to one side of the middle frame 112 .
  • the rear cover 113 can be detachably mounted on the middle frame 112 to facilitate maintenance and replacement of components or modules such as the battery 130 inside the electronic device 100 .
  • the middle frame 112 can be made of metal alloy materials such as titanium alloy or aluminum-magnesium alloy
  • the back cover 113 can be made of polycarbonate (PC), acrylonitrile butadiene styrene copolymers, ABS) and other engineering plastics, glass or ceramics, or titanium alloys, aluminum-magnesium alloys and other metal alloys.
  • the back cover 113 and the middle frame 112 may be integrally formed to improve the structural stability of the electronic device 100 .
  • the middle frame 112 and the back cover 113 may be made of one metal material or a combination of multiple metal materials.
  • FIG. 3 is a schematic structural diagram of the middle frame 112 of the housing 110 of the electronic device 100 shown in FIG. 2
  • FIG. 4 is a structural schematic diagram of the middle frame 112 shown in FIG. 3 from another angle.
  • the middle frame 112 includes a middle plate 115 , a frame 116 and a partition 117 .
  • the sound outlet 111 is provided on the frame 116 .
  • the middle plate 115 is provided with an avoidance hole 118 , and the avoidance hole 118 penetrates the middle plate 115 along the thickness direction of the middle plate 115 .
  • the frame 116 is fixed on the periphery of the middle plate 115, and is enclosed with the middle plate 115 to form a receiving space 119.
  • the accommodating space 119 communicates with the escape hole 118 .
  • the partition 117 is located on the inner side of the frame 116 and is fixed to the frame 116 , and divides the accommodation space 119 into a first accommodation space 1191 and a second accommodation space 1192 .
  • the first accommodating space 1191 communicates with the sound outlet hole 111
  • the second accommodating space 1192 communicates with the escape hole 118 .
  • the screen 120 is fixed on the other side of the middle frame 112 , that is, the screen 120 is installed on the side of the middle frame 112 away from the back cover 113 , that is, the screen 120 and the back cover 113 are installed on the opposite sides of the middle frame 112 . side.
  • the direction in which the back cover 113 points to the screen 120 is the Z-axis direction shown in the figure.
  • the screen 120 is placed toward the user, and the back cover 113 is placed away from the user.
  • the screen 120 includes a display surface (not shown in the figure) and a non-display surface (not shown in the figure) arranged oppositely.
  • the display surface is the surface of the screen 120 facing away from the middle frame 112 for displaying images.
  • the screen 120 may include a cover plate and a display screen fixed on the cover plate.
  • the cover plate can be made of transparent materials such as glass.
  • the display screen may be a liquid crystal display (LCD) or an organic light-emitting diode (OLED).
  • FIG. 5 is a schematic diagram illustrating the assembly structure of the middle frame 112 , the battery 130 , the speaker module 140 , the camera module 150 and the heat sink 160 of the housing 110 of the electronic device 100 shown in FIG. 2 .
  • the battery 130 and the speaker module 140 are installed in the first accommodating space 1191 , and the camera module 150 and the heat sink 160 are installed in the second accommodating space 1192 .
  • the camera module 150 is exposed relative to the casing 110 .
  • the camera module 150 is the rear camera module 150 of the electronic device 100 .
  • the camera module 150 passes through the avoidance hole 118 of the middle plate 115 (as shown in FIG. 4 ) and the avoidance hole 114 of the back cover 113 (as shown in FIG. 2 ), and is exposed relative to the back cover 113 .
  • some of the camera modules 150 are accommodated in the second accommodation space 1192 , and some of the camera modules 150 protrude from the back cover 113 .
  • the exposure of the camera module 150 relative to the rear cover 113 means that the rear cover 113 does not completely cover the camera module 150 .
  • the camera module 150 may also be flush with the back cover 113 , or the camera module 150 may not pass through the avoidance hole 114 of the back cover 113 and be completely accommodated in the second accommodation space 1192 .
  • FIG. 6 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under an embodiment. Wherein, sectioned along the "I-I direction" means sectioned along the plane where the I-I line is located, and the same or similar descriptions of the accompanying drawings can be understood hereinafter.
  • the heat dissipation device 160 is fixed to the middle frame 112 .
  • the heat dissipation device 160 is fixed to the middle plate 115 .
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • orientation terms such as “top” and “bottom” used in describing the heat sink 160 in the embodiments of the present application are mainly explained based on the display orientation in FIG.
  • the negative direction toward the Z-axis is "bottom”, which does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a negative impact on the heat dissipation device 160 in practical application scenarios.
  • the first circuit board 10 includes a substrate 11 , two thermally conductive layers 12 and a first thermally conductive structure 13 .
  • the substrate 11 includes a top surface 14 and a bottom surface 15 disposed opposite to each other. Both the two thermally conductive layers 12 and the first thermally conductive structure 13 are embedded in the substrate 11 .
  • the two thermally conductive layers 12 are spaced apart from each other, and the first thermally conductive structure 13 is connected between the two thermally conductive layers 12 .
  • the two thermally conductive layers 12 are a first thermally conductive layer 12a and a second thermally conductive layer 12b respectively, and the first thermally conductive layer 12a and the second thermally conductive layer 12b are arranged at intervals along the thickness direction of the first circuit board 10 .
  • the first thermally conductive layer 12a is exposed relative to the top surface 14 of the substrate 11 .
  • the top surface (not shown) of the first heat conducting layer 12 a is flush with the top surface 14 of the substrate 11 . It should be understood that the fact that the first thermally conductive layer 12a is exposed relative to the top surface 14 of the substrate 11 means that the substrate 11 does not completely cover the first thermally conductive layer 12a.
  • the top surface of the first thermally conductive layer 12a may be convex relative to the top surface 14 of the substrate 11 , or the top surface of the first thermally conductive layer 12a may be recessed relative to the top surface 14 of the substrate 11 .
  • the second heat conducting layer 12b is located on the side of the first circuit board 10 facing the second circuit board 20 .
  • the second thermally conductive layer 12b is located on the bottom side of the first thermally conductive layer 12a , is arranged parallel to and spaced from the first thermally conductive layer 12a , and is exposed relative to the bottom surface 15 of the substrate 11 .
  • the bottom surface (not marked) of the second heat conducting layer 12 b is flush with the bottom surface 15 of the substrate 11 . It should be understood that the fact that the second thermally conductive layer 12b is exposed relative to the bottom surface 15 of the substrate 11 means that the substrate 11 does not completely cover the second thermally conductive layer 12b.
  • the bottom surface of the second thermally conductive layer 12b may be convex relative to the bottom surface 15 of the substrate 11 , or the bottom surface of the second thermally conductive layer 12b may be recessed relative to the bottom surface 15 of the substrate 11 .
  • both the first thermally conductive layer 12a and the second thermally conductive layer 12b are ground layers.
  • the first thermal conductive layer 12a and the second thermal conductive layer 12b can be made of metal materials such as copper, silver, aluminum, magnesium or tin to ensure that the first thermal conductive layer 12a and the second thermal conductive layer 12b have high thermal conductivity .
  • the first heat-conducting structure 13 is connected between the first heat-conducting layer 12a and the second heat-conducting layer 12b to realize heat transfer and electrical connection between the first heat-conducting layer 12a and the second heat-conducting layer 12b.
  • the first heat conducting structure 13 includes a plurality of heat conducting members, and the plurality of heat conducting members 13 are arranged at intervals to increase the heat transfer path between the first heat conducting layer 12a and the second heat conducting layer 12b, and speed up the The heat transfer speed between the second thermally conductive layers 12b.
  • the substrate 11 is provided with a communication hole (not shown) for connecting the first thermally conductive layer 12a and the second thermally conductive layer 12b.
  • the communication holes are via holes or buried holes.
  • the heat-conducting member is located in the communication hole to connect the first heat-conducting layer 12a and the second heat-conducting layer 12b.
  • the heat-conducting member can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the first heat-conducting structure 13 has a high thermal conductivity and improve the gap between the first heat-conducting layer 12a and the second heat-conducting layer 12b. heat transfer efficiency.
  • the thermally conductive member may be a metal column formed by filling the communication hole with a metal material, or the thermally conductive member may be a metal layer formed by partially covering or completely covering the hole wall of the communication hole with a metal material.
  • the first circuit board 10 may also include three or more thermally conductive layers 12 and a first thermally conductive structure 13.
  • the first thermally conductive structure 13 includes a plurality of thermally conductive members, each of which is connected to Between the two thermally conductive layers 12 , to achieve heat transfer and electrical communication between the multiple thermally conductive layers 12 , to ensure uniform heat diffusion inside the first circuit board 10 .
  • the second circuit board 20 is disposed opposite to the first circuit board 10 .
  • the arrangement of the second circuit board 20 opposite to the first circuit board 10 means that, along the Z-axis direction, the second circuit board 20 and the first circuit board 10 at least partially overlap.
  • the orthographic projection of the second circuit board 20 on the plane where the bottom surface 15 of the first circuit board 10 is located is at least partially within the bottom surface 15 of the first circuit board 10 , or the first circuit board 10 is on the top surface of the second circuit board 20 .
  • the orthographic projection of the plane on which 14 is located is at least partially within the top surface 14 of the second circuit board 20 .
  • the second circuit board 20 and the first circuit board 10 may not be disposed opposite to each other, that is, along the Z-axis direction, the second circuit board 20 and the first circuit board 10 are completely staggered, and there is no overlapping portion.
  • the second circuit board 20 is disposed opposite to the first circuit board 10 .
  • the second circuit board 20 includes a substrate 21 , two thermally conductive layers 22 and a second thermally conductive structure 23 .
  • the base plate 21 includes a top surface 24 and a bottom surface 25 disposed opposite to each other.
  • the two thermally conductive layers 22 and the second thermally conductive structure 23 are both embedded in the substrate 21 .
  • the two thermally conductive layers 22 are spaced apart from each other, and the second thermally conductive structure 23 is connected between the two thermally conductive layers 22 .
  • the two thermally conductive layers 22 are a third thermally conductive layer 22a and a fourth thermally conductive layer 22b, respectively, and the third thermally conductive layer 22a and the fourth thermally conductive layer 22b are spaced apart from each other along the thickness direction of the second circuit board 20 .
  • the third thermally conductive layer 22 a is exposed relative to the top surface 24 of the substrate 21 .
  • the top surface (not shown) of the third heat conducting layer 22 a is flush with the top surface 24 of the substrate 21 . It should be understood that the fact that the third thermally conductive layer 22a is exposed relative to the top surface 24 of the substrate 21 means that the substrate 22 does not completely cover the third thermally conductive layer 22a.
  • the top surface of the third thermally conductive layer 22 a may be convex relative to the top surface 24 of the substrate 21 , or the top surface of the third thermally conductive layer 22 a may be recessed relative to the top surface 24 of the substrate 21 .
  • the fourth thermal conductive layer 22b is located on the side of the second circuit board 20 facing away from the first circuit board 10 .
  • the fourth heat-conducting layer 22b is located on the bottom side of the third heat-conducting layer 22a, is parallel to and spaced apart from the third heat-conducting layer 22a, and is located between the bottom surface 25 and the top surface 24 of the substrate 21 .
  • both the third thermally conductive layer 22a and the fourth thermally conductive layer 22b are ground layers.
  • the third thermal conductive layer 22a and the fourth thermal conductive layer 22b can be made of metal materials such as copper, silver, aluminum, magnesium or tin to ensure that the third thermal conductive layer 22a and the fourth thermal conductive layer 22b have higher thermal conductivity .
  • the second thermally conductive structure 23 is connected between the third thermally conductive layer 22a and the fourth thermally conductive layer 22b to realize heat transfer and electrical connection between the third thermally conductive layer 22a and the fourth thermally conductive layer 22b.
  • the second heat-conducting structure 23 includes a plurality of heat-conducting members, and the plurality of heat-conducting members are spaced apart from each other, so as to increase the heat dissipation path between the third heat-conducting layer 22a and the fourth heat-conducting layer 22b, and speed up the connection between the third heat-conducting layer 22a and the fourth heat-conducting layer 22b. The heat transfer speed between the thermally conductive layers 22b.
  • the substrate 21 is provided with a communication hole (not shown) that communicates with the third thermally conductive layer 22a and the fourth thermally conductive layer 22b.
  • the communication holes are via holes or buried holes.
  • the heat-conducting members of the second heat-conducting structure 23 are located in the communication holes to connect the third heat-conducting layer 22a and the fourth heat-conducting layer 22b.
  • the heat-conducting member of the second heat-conducting structure 23 can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the second heat-conducting structure 23 has a high thermal conductivity and improve the third heat-conducting layer 22a and the third heat-conducting layer 22a.
  • the thermally conductive member of the second thermally conductive structure 23 may be a metal column formed by filling the communication hole with a metal material, or the thermally conductive member of the second thermally conductive structure 23 may be a hole partially or completely covered with a metal material. wall to form a metal layer.
  • the second circuit board 20 may also include three or more thermally conductive layers 22 and a second thermally conductive structure 23 , the second thermally conductive structure 23 includes a plurality of thermally conductive members, each of the second thermally conductive structures 23 A heat-conducting member is connected between the two heat-conducting layers 22 to achieve heat transfer and electrical communication between the multiple-layers of heat-conducting layers 22 and ensure uniform heat diffusion inside the second circuit board 20 .
  • the heat dissipation device 160 further includes a support column 50, and the support column 50 is connected between the first circuit board 10 and the second circuit board 20 to form an air layer 161 between the first circuit board 10 and the second circuit board 20, It is convenient to mount electronic components on the surfaces of the first circuit board 10 and the second circuit board 20 facing each other, which can not only increase the functional diversity of the heat dissipation device 160 , but also improve the integration degree of the heat dissipation device 160 .
  • the support column 50 may be made of high-strength materials such as metal or high-strength plastic, so as to ensure the structural stability of the heat dissipation device 160 .
  • the heat dissipation device 160 further includes a plurality of first components 60 , and the plurality of first components 60 are all located in the accommodating space 151 .
  • Some of the first components 60 are mounted on the first circuit board 10 and are electrically connected to the first circuit board 10
  • some of the first components 60 are mounted on the second circuit board 20 and are electrically connected to the second circuit board 20 .
  • the first component 60 may include one or more functional devices such as an antenna module, a front-end module, a modem, a signal transceiver, a memory, a flash memory, a connector, a functional sensor, a resistor, a capacitor, an inductor or a crystal oscillator.
  • the support column 50 is connected between the substrate 11 of the first circuit board 10 and the substrate 21 of the second circuit board 20 .
  • the support column 50 may be connected to the substrate 11 of the first circuit board 10 and the substrate 21 of the second circuit board 20 by means of adhesive bonding.
  • the heat dissipation device 160 includes two layers of adhesive layers 51 , one layer of the adhesive layer 51 is connected between the bottom surface 15 of the substrate 11 of the first circuit board 10 and the top surface 14 of the support column 50 , and the other layer of the adhesive layer 51 is connected between the bottom surface 15 of the support column 50 and the top surface 14 of the base plate 21 of the second circuit board 20 .
  • the support columns 50 are connected to the first circuit board 10 and the second circuit board 20 at intervals through the two adhesive layers 51 respectively.
  • the height of the support column 50 is H. It should be understood that the height refers to the dimension along the Z-axis direction, and the same understanding can be made in the related descriptions hereinafter.
  • the main heating element 30 is mounted on the side of the second circuit board 20 away from the first circuit board 10 , that is, the main heating element 30 is mounted on the bottom side of the second circuit board 20 .
  • the main heating device 30 is electrically connected with the second circuit board 20 .
  • the main heat generating device 30 is mounted on the second circuit board 20 in a flip-chip package.
  • the main heating device 30 can also be mounted on the side of the second circuit board 20 facing the first circuit board 10, that is, the main heating device 30 can also be mounted on the top side of the second circuit board 20.
  • the main heating device 30 may be a multimedia application processing device (multimedia application processor, MAP), a system on chip (system on chip, SOC), a central processing unit (central processing unit, CPU), a power management device (power management unit, PMU) or RF amplifier (power amplifier, PA) and other high-heat components.
  • the main heating device 30 includes heat dissipation pins 31 , and the heat dissipation pins 31 are connected to the heat conduction layer 22 of the second circuit board 20 . Specifically, the heat dissipation pins 31 are connected to the fourth heat conduction layer 22 b to realize heat transfer and electrical communication between the main heating device 30 and the second circuit board 20 .
  • the main heating device 30 can not only transfer the heat generated during operation to the second circuit board 20 through the heat dissipation pins 31 , but also realize electrical communication with the second circuit board 20 through the heat dissipation pins 31 .
  • the heat dissipation pin 31 has two functions of heat dissipation and grounding, that is, the heat dissipation pin 31 can be used as the grounding pin of the main heating device 30 .
  • the heat dissipation pins 31 are electrically connected to the fourth heat conducting layer 22b by welding.
  • the heat dissipation device 160 includes the solder layer 32, and the solder layer 32 is connected between the heat dissipation pins 31 and the fourth thermal conductive layer 22b. That is, the heat dissipation pins 31 are indirectly connected to the fourth heat conduction layer 22b through the solder layer 32 .
  • the heat dissipation pins 31 may also be connected to the third thermal conductive layer 22 a, or the heat dissipation pins 31 may also be connected to the second heat conductive structure 23 .
  • the orthographic projection of the main heating device 30 on the first circuit board 10 is located in the first circuit board 10 . That is, along the thickness direction of the first circuit board 10 (ie, the Z-axis direction in the figure), the main heating element 30 overlaps with the first circuit board 10 . That is, the orthographic projection of the main heating element 30 on the bottom surface 15 of the substrate 11 (ie, the bottom surface of the first circuit board 10 ) is located on the bottom surface 15 of the substrate 11 . In addition, along the Z-axis direction, the main heating element 30 and the second heat conducting structure 23 are completely staggered.
  • the orthographic projections of the main heating device 30 and the first thermally conductive structure 13 on the fourth thermally conductive layer 22b are completely staggered, that is, the orthographic projections of the main heating device 30 and the first thermally conductive structure 13 on the fourth thermally conductive layer 22b do not overlap at all. .
  • the main heating device 30 and the first heat-conducting structure 13 are respectively connected to two ends of the fourth heat-conducting layer 22b.
  • the heat generated when the main heating device 30 is working is firstly transferred to one end of the fourth thermally conductive layer 22b through the heat dissipation pins 31 , and then transferred to the other end of the fourth thermally conductive layer 22b , and then transferred to the third thermally conductive layer through the second thermally conductive structure 23 .
  • 22a is helpful to realize the uniform diffusion of the heat generated by the main heating device 30 on the second circuit board 20 and improve the heat dissipation efficiency of the main heating device 30 .
  • the heat dissipation device 160 may further include a plurality of second components 70 .
  • the plurality of second components 70 are mounted on the bottom side of the second circuit board 20 at intervals and are electrically connected to the second circuit board 20 to increase the heat dissipation device.
  • the functional diversity of the 160 is improved, and the integration degree of the cooling device 160 is improved.
  • the second component 70 may include one or more functional devices such as an antenna module, a front-end module, a modem, a signal transceiver, a memory, a flash memory, a connector, a functional sensor, a resistor, a capacitor, an inductor or a crystal oscillator.
  • the thermally conductive component 40 is connected between the thermally conductive layer 12 of the first circuit board 10 and the thermally conductive layer 22 of the second circuit board 20 to achieve heat transfer between the first circuit board 10 and the second circuit board 20 .
  • the heat-conducting component 40 is located in the air layer 161 and is connected between the second heat-conducting layer 12b and the third heat-conducting layer 22a. In this embodiment, along the Z-axis direction, the thermally conductive component 40 at least partially overlaps with the first thermally conductive structure 13 and the second thermally conductive structure 23 .
  • the orthographic projections of the thermally conductive component 40 and the first thermally conductive structure 13 on the second thermally conductive layer 12b at least partially overlap, and the orthographic projections of the thermally conductive component 40 and the second thermally conductive structure 23 on the third thermally conductive layer 22a at least partially overlap. It helps to shorten the heat dissipation path of the heat generated when the main heating device 30 is working from the fourth thermally conductive layer 22b to the thermally conductive component 40, and then from the thermally conductive component 40 to the first thermally conductive layer 12a of the second circuit board 10. 30 cooling efficiency.
  • the thermally conductive component 40 is also electrically connected between the thermally conductive layer 12 of the first circuit board 10 and the thermally conductive layer 22 of the second circuit board 20 , so as to realize the thermal conductivity of the thermally conductive layer 12 of the first circuit board 10 and the second circuit board 20 The electrical connection between the layers 22 further realizes the electrical communication between the first circuit board 10 and the second circuit board 20 .
  • the thermally conductive component 40 includes two thermally conductive blocks 41 and a thermal interface material (thermal interface material, TIM) layer 42 , and the thermal interface material layer 42 is connected between the two thermally conductive blocks 41 .
  • thermally conductive block 41 is connected to the thermally conductive layer 12 of the first circuit board 10 , and the other thermally conductive block 41 is connected to the thermally conductive layer 22 of the second circuit board 20 , that is, the two thermally conductive blocks 41 are respectively connected to the thermally conductive layer of the first circuit board 10 . 12 and the thermally conductive layer 22 of the second circuit board 20 .
  • the thermally conductive block 41 is made of metal materials such as copper, silver, aluminum, magnesium or tin.
  • the two heat-conducting blocks 41 are a first heat-conducting block 41a and a second heat-conducting block 41b, respectively, and the second heat-conducting block 41b is located on the bottom side of the first heat-conducting block 41a.
  • the first thermally conductive block 41a is connected to the second thermally conductive layer 12b and electrically connected to the second thermally conductive layer 12b
  • the second thermally conductive block 41b is connected to the third thermally conductive layer 22a and electrically connected to the third thermally conductive layer 22a.
  • the height of the first heat-conducting block 41a is H1
  • the height of the second heat-conducting block 41b is H2. At this time, H/2 ⁇ H1+H2 ⁇ H.
  • the first thermally conductive block 41a may also be connected to the first thermally conductive layer 12a
  • the second thermally conductive block 41b may also be connected to the fourth thermally conductive layer 22b.
  • the thermal interface material layer 42 is connected between the first thermally conductive block 41a and the second thermally conductive block 41b.
  • a thermal interface material may be added between the first thermally conductive block 41a and the second thermally conductive block 41b by means of mounting, dispensing or coating to form the thermal interface material layer 42 .
  • the first thermally conductive block 41a and the second thermally conductive block 41b are indirectly connected through the thermal interface material layer 42 to achieve heat transfer and electrical connection.
  • the thermal interface material is located between the first thermally conductive block 41a and the second thermally conductive block 41b, and can fill the air gap and tolerance redundancy between the first thermally conductive block 41a and the second thermally conductive block 41b, reducing the first thermally conductive block 41a and the second thermally conductive block 41b.
  • the interface thermal resistance between the thermally conductive blocks 41b improves the heat transfer efficiency.
  • the thermal interface material layer 42 may be a material such as a thermally conductive gasket or thermally conductive silicone grease containing metal particles or carbon-based high thermal conductivity particles.
  • the heat dissipation device 160 further includes two connecting layers 80 .
  • a layer of connection layer 80 is connected between the thermally conductive layer 12 of the first circuit board 10 and the thermally conductive component 40 to achieve heat transfer and electrical communication between the first circuit board 10 and the thermally conductive component 40 .
  • Another connection layer 80 is connected between the thermally conductive layer 22 of the second circuit board 20 and the thermally conductive component 40 to achieve heat transfer and electrical communication between the second circuit board 20 and the thermally conductive component 40 .
  • the thermally conductive component 40 is indirectly connected to the thermally conductive layer 12 of the first circuit board 10 and the thermally conductive layer 22 of the second circuit board 20 through the two connection layers 80 respectively.
  • the heat dissipation device 160 may only include one layer of connection layer 80 , and the connection layer 80 is connected between the thermally conductive layer 12 of the first circuit board 10 and the thermally conductive component 40 , that is, the thermally conductive component 40 is connected to the first circuit board 10 through the connecting layer 80 and the thermally conductive component 40 .
  • the thermally conductive layer 12 of one circuit board 10 is indirectly connected and directly connected to the thermally conductive layer 22 of the second circuit board 20 .
  • the connecting layer 80 is connected between the thermally conductive layer 22 of the second circuit board 20 and the thermally conductive component 40 , that is, the thermally conductive component 40 is indirectly connected to the thermally conductive layer 22 of the second circuit board 20 through the connecting layer 80 , and is connected to the first circuit board 10
  • the thermally conductive layer 12 is directly connected.
  • the two connecting layers 80 are a first connecting layer 80a and a second connecting layer 80b respectively.
  • the first connecting layer 80a is connected between the thermally conductive layer 12 of the first circuit board 10 and the thermally conductive component 40, and the second connecting layer 80b
  • the thermally conductive layer 22 connected to the second circuit board 20 is between the thermally conductive component 40 .
  • the first connection layer 80a is connected between the second heat conduction layer 12b and the first heat conduction block 41a
  • the second connection layer 80b is connected between the third heat conduction layer 22a and the second heat conduction block 41b.
  • connection layer 80 is made of solder. That is, the connection layer 80 is a solder layer.
  • the first heat-conducting block 41a is welded to the second heat-conducting layer 12b by welding, and is electrically connected to the second heat-conducting layer 12b.
  • the second heat-conducting block 41b is welded to the third heat-conducting layer 22a by welding, and is electrically connected to the third heat-conducting layer 22a. At this time, heat transfer and electrical communication can be achieved between the first circuit board 10 and the second circuit board 20 through the two layers of connection layers 80 and the thermally conductive component 40 .
  • connection layer 80 is made of thermal interface material. That is, the connection layer 80 is a thermal interface material layer.
  • a thermal interface material may be added between the first thermally conductive block 41a and the second thermally conductive layer 12b by means of mounting, dispensing or coating to form the first connection layer 80a.
  • the first heat-conducting block 41a is indirectly connected to the second heat-conducting layer 12b through the thermal interface material, so as to realize heat transfer and electrical connection with the second heat-conducting layer 12b.
  • the thermal interface material is located between the first thermally conductive block 41a and the second thermally conductive layer 12b, and can fill the air gap and tolerance redundancy between the first thermally conductive block 41a and the second thermally conductive layer 12b, reducing the reduction of the first thermally conductive block 41a and the second thermally conductive layer 12b.
  • the interface thermal resistance between the thermally conductive layers 12b improves the heat transfer efficiency between the first thermally conductive block 41a and the second thermally conductive layer 12b.
  • a thermal interface material may be added between the second thermally conductive block 41b and the third thermally conductive layer 22a by means of mounting, dispensing or coating to form the second connection layer 80b.
  • the second thermally conductive block 41b is indirectly connected to the third thermally conductive layer 22a through a thermal interface material, so as to achieve heat transfer and electrical connection with the third thermally conductive layer 22a.
  • the thermal interface material is located on the second thermally conductive block 41b and the third thermally conductive layer 22a, which can fill the air gap and tolerance redundancy between the second thermally conductive block 41b and the third thermally conductive layer 22a, and reduce the second thermally conductive block 41b and the third thermally conductive layer.
  • the interface thermal resistance between 22a improves the thermal conduction efficiency between the second thermally conductive block 41b and the third thermally conductive layer 22a.
  • connection layer 80 is made of thermally conductive adhesive. That is, the connection layer 80 is a thermally conductive adhesive layer.
  • the first heat-conducting block 41a is connected to the second heat-conducting layer 12b by means of adhesion
  • the second heat-conducting block 41b is connected to the third heat-conducting layer 22a by means of adhesion.
  • heat transfer can be achieved between the first circuit board 10 and the second circuit board 20 through two thermally conductive adhesive layers and the thermally conductive component 40 .
  • the thermally conductive adhesive layer also has a conductive function, and electrical communication between the first circuit board 10 and the second circuit board 20 can be achieved through two layers of thermally conductive adhesive layers and the thermally conductive component 40 .
  • the thermally conductive adhesive may be thermally conductive silver adhesive, and the conductive particles in the thermally conductive silver adhesive may be made of materials such as sintered silver, lead-tin alloy, or gold-tin alloy.
  • the two connecting layers 80 may also be different, for example, one connecting layer 80 is made of solder, the other connecting layer 80 is made of thermal interface material or thermally conductive adhesive, or, one connecting layer 80 is made of It is made of thermal interface material, and the other connecting layer 80 is made of thermal conductive glue.
  • the air layer 161 between the first circuit board 10 and the second circuit board 20 there are only a plurality of first components 60 , the thermally conductive component 40 and the two connection layers 80 , and there is no covering
  • the encapsulation layers of the components 60 , the thermally conductive components 40 and the connection layer 80 that is, the rest of the medium are all air, which not only saves the cost waste caused by the encapsulation process, but also simplifies the assembly process of the heat sink 160 .
  • the electronic device 100 further includes a heat transfer member 170 , and the heat transfer member 170 is connected between the heat dissipation device 160 and the middle frame 112 .
  • the heat transfer member 170 is connected between the first circuit board 10 and the middle board 115 to form an accommodating space 171 between the first circuit board 10 and the middle board 115 , so that the first circuit board 10 faces the middle board 115
  • the surface-mounted electronic components are formed to form the heat dissipation device 160 in the form of a "squash", which can not only increase the functional diversity of the heat dissipation device 160, but also improve the integration degree of the heat dissipation device 160.
  • the heat dissipation device 160 may further include a plurality of third components 90 , and the plurality of third components 90 are all located in the accommodating space 171 .
  • the plurality of third components 90 are mounted on the first circuit board 10 at a distance from each other, and are electrically connected to the first circuit board 10 .
  • the third component 90 includes one or more functional devices such as an antenna module, a front-end module, a modem, a signal transceiver, a memory, a flash memory, a connector, a functional sensor, a resistor, a capacitor, an inductor or a crystal oscillator.
  • the heat transfer member 170 is connected between the heat conducting layer 12 of the first circuit board 10 and the middle plate 115 to realize heat transfer between the heat dissipation device 160 and the middle plate 115 .
  • the heat dissipation device 160 can transfer heat to the middle plate 115 through the heat transfer member 170 to achieve heat dissipation.
  • the middle frame 112 is made of metal and can be used as a heat sink of the heat sink 160 .
  • the middle frame 112 may not be used as a heat sink of the heat sink 160, and the electronic device 100 may further include a heat sink specially used to dissipate heat to the heat sink 160, and the heat sink may be a graphite film, a graphene film, Thermal conductive metal film, heat pipe (HP) radiator, vapor chamber (VC) radiator or fan and other components.
  • the heat sink may be a graphite film, a graphene film, Thermal conductive metal film, heat pipe (HP) radiator, vapor chamber (VC) radiator or fan and other components.
  • the heat transfer member 170 at least partially overlaps with the first heat conducting structure 13 .
  • the orthographic projections of the heat transfer member 170 and the first heat transfer structure 13 on the first heat transfer layer 12a at least partially overlap, which helps to shorten the heat transfer from the second heat transfer layer 12b to the middle frame of the main heating device 30 during operation.
  • the heat dissipation path 112 improves the heat dissipation efficiency of the main heating device 30 .
  • the heat transfer member 170 is a heat transfer block, and the heat transfer block is connected between the second heat conducting layer 12 b and the middle plate 115 to realize heat transfer between the first circuit board 10 and the middle plate 115 .
  • the heat transfer block can be made of metal materials such as copper, silver, aluminum, magnesium or tin to ensure high thermal conductivity of the heat transfer block.
  • the heat transfer block is also electrically connected between the thermal conductive layer 12 of the first circuit board 10 and the middle plate 115 .
  • the middle frame 112 of the electronic device 100 is used for grounding, and the thermally conductive layer 12 of the first circuit board 10 is electrically connected to the middle plate 115 through a heat transfer block to realize the grounding of the thermally conductive layer 12 of the first circuit board 10 .
  • the thermally conductive layer 22 of the second circuit board 20 is electrically connected to the thermally conductive layer 12 of the first circuit board 10 , the grounding of the thermally conductive layer 22 of the second circuit board 20 is also achieved.
  • the electronic device 100 further includes two heat transfer layers 180 .
  • One heat transfer layer 180 is connected between the heat transfer member 170 and the middle plate 115 to realize heat transfer between the heat transfer member 170 and the middle plate 115 .
  • Another heat transfer layer 180 is connected between the heat transfer member 170 and the thermally conductive layer 12 of the first circuit board 10 to achieve heat transfer between the heat transfer member 170 and the first circuit board 10 .
  • the heat transfer member 170 is indirectly connected to the middle board 115 and the heat transfer layer 12 of the first circuit board 10 through the two heat transfer layers 180 respectively.
  • the electronic device 100 may include only one heat transfer layer 180 , and the heat transfer layer 180 is connected between the heat transfer member 170 and the middle plate 115 , that is, the heat transfer member 170 passes through the heat transfer layer 180 and the middle plate 115 .
  • 115 is indirectly connected and directly connected to the thermal conductive layer 12 of the first circuit board 10 .
  • the heat transfer layer 180 is connected between the heat transfer member 170 and the heat transfer layer 12 of the first circuit board 10 , that is, the heat transfer member 170 is connected to the heat transfer layer 12 of the first circuit board 10 through the heat transfer layer 180 at intervals, and the middle Board 115 is directly connected.
  • the electronic device 100 may not include the heat transfer layer 180 , and the heat transfer member 170 is directly connected to the middle board 115 and the heat transfer layer 12 of the first circuit board 10 .
  • the two heat transfer layers 180 are the first heat transfer layer 180 and the second heat transfer layer 180 respectively.
  • the first heat transfer layer 180 is connected between the heat transfer member 170 and the middle board 115
  • the second heat transfer layer 180 is connected between the heat transfer member 170 and the thermally conductive layer 12 of the first circuit board 10 .
  • the first heat transfer layer 180 is made of thermal interface material. That is, the first heat transfer layer 180 is a thermal interface material layer. Specifically, a thermal interface material may be added between the heat transfer member 170 and the middle plate 115 by means of mounting, dispensing or coating to form the first heat transfer layer 180 . At this time, heat transfer and electrical connection are achieved between the heat transfer member 170 and the middle plate 115 through the thermal interface material.
  • the thermal interface material is located between the heat transfer member 170 and the middle plate 115 , which can fill the air gap and tolerance redundancy between the heat transfer member 170 and the middle plate 115 and reduce the interface thermal resistance between the heat transfer member 170 and the middle plate 115 , to improve the heat transfer efficiency between the heat transfer member 170 and the middle plate 115 .
  • the first heat transfer layer 180 can also be made of solder, and the heat transfer member 170 is welded to the middle plate 115 by welding, or the first heat transfer layer 180 can also be made of thermal conductive glue At this time, the heat transfer member 170 is connected with the middle plate 115 by means of bonding.
  • the second heat transfer layer 180 is connected between the heat transfer member 170 and the first heat transfer layer 12a.
  • the second connection layer 80b is made of thermally conductive adhesive. That is, the second connection layer 80b is a thermally conductive adhesive layer.
  • the heat transfer member 170 is connected to the first heat conducting layer 12a by means of bonding. At this time, heat transfer and electrical connection are realized between the heat transfer member 170 and the first heat conducting layer 12a through the heat conducting adhesive layer.
  • the second connection layer 80b can also be made of thermal interface material, and in this case, a thermal interface can be increased between the heat transfer member 170 and the first thermal conductive layer 12a by mounting, dispensing or coating. material to form the second heat transfer layer 180 .
  • the heat transfer member 170 is indirectly connected to the first heat conducting layer 12a through a thermal interface material, so as to realize heat transfer and electrical connection with the first heat conducting layer 12a.
  • the second connection layer 80b can also be made of solder, and in this case, the heat transfer member 170 is connected to the first heat conduction layer 12a by soldering.
  • the first circuit board 10 and the second circuit board 20 are separated between the main heating device 30 and the middle plate 115 , and the heat generated by the main heating device 30 during operation can be transferred to the fourth heat conduction through the heat dissipation pins 31 first.
  • the layer 22b is transferred to the second thermally conductive block 41b via the second thermally conductive structure 23 and the third thermally conductive layer 22a, transferred to the second thermally conductive layer 12b via the thermal interface material layer 42 and the first thermally conductive block 41a of the thermally conductive component 40, and passed through the third thermally conductive layer 12b.
  • a heat-conducting structure 13 and the first heat-conducting layer 12 a are transferred to the heat transfer member 170 , and finally transferred to the middle plate 115 via the heat transfer member 170 , so as to dissipate heat to the main heating device 30 .
  • a heat-conducting structure 13 , heat-transfer member 170 and middle plate 115 form a three-dimension (3D) heat dissipation topology network.
  • the three-dimensional heat dissipation topology network can receive the heat generated by the main heating device 30 through the heat dissipation pins 31 , so as to realize the heat dissipation of the main heating device 30 .
  • the heat dissipation of the heating device 30 is such that the heat flux density of the heat dissipation device 160 is low, the heat dissipation efficiency is high, and the work reliability is better.
  • the three-dimensional heat dissipation topology network shown in this embodiment can transfer the heat generated when the main heating device 30 of the second circuit board 20 far away from the middle plate 115 operates to the middle plate 115 for effective heat diffusion, so as to realize the heat inside the electronic device 100
  • the redistribution of the main heating element 30 can not only reduce the junction temperature of the main heating element 30, but also effectively solve the heat dissipation problem of the main heating element 30, improve the working efficiency and service life of the main heating element 30, and prevent the main heating element 30 from being in the electronic device 100.
  • Local hot spots are formed on the housing 110 to avoid the restriction of the application environment of the electronic device 100 by the heat of the main heating device 30 .
  • the heat dissipation device 160 may further include three or more circuit boards.
  • the main heating device 30 and the middle plate 115 may also be separated by three or more circuit boards. More than one circuit board can also construct a three-dimensional heat dissipation topology network to achieve effective heat dissipation of the main heating device 30 .
  • the heat dissipation path of the main heating device 30 by the three-dimensional heat dissipation topology network will be described.
  • the heat dissipation path of the main heating device 30 reference may be made to the black bold dashed line with arrows shown in FIG. 6 .
  • part of the heat E1 is transferred to the external environment through the structure of the main heating device 30 , and the rest of the heat E2 is transferred to the fourth heat conduction layer 22b through the heat dissipation pins 31 .
  • the heat E2 is transferred to the second thermally conductive structure 23 through the fourth thermally conductive layer 22b , and then transferred to the third thermally conductive layer 22a through the second thermally conductive structure 23 .
  • part of the heat E3 in the heat E2 is transferred to the external environment through the second circuit board 20 , and the rest of the heat E4 is transferred to the thermally conductive component 40 through the third thermally conductive layer 22a , and then transferred to the second thermally conductive layer 12b through the thermally conductive component 40 .
  • the heat E4 is transferred to the first thermally conductive structure 13 through the second thermally conductive layer 12b , and then transferred to the first thermally conductive layer 12a through the first thermally conductive structure 13 .
  • part of the heat E5 in the heat E4 is transferred to the external environment through the first circuit board 10 , and the rest of the heat E6 is transferred to the heat transfer member 170 through the first thermal conductive layer 12 a , and then transferred to the middle plate 115 through the heat transfer member 170 .
  • the heat E6 is transferred to the external environment through the middle plate 115 .
  • the heat generated when the main heating device 30 is working can be transferred to the external environment through the main heating device 30 , the second circuit board 20 , the first circuit board 10 and the middle plate 115 , so as to achieve an effective effect on the main heating device 30 . heat dissipation.
  • Table 1 is the temperature of each component obtained by testing the existing heat sink and the heat sink shown in this embodiment by means of finite element simulation.
  • the three-dimensional heat dissipation topology network shown in this embodiment is not constructed in the existing heat dissipation device.
  • Table 1 The temperature of each component in the existing heat sink and the heat sink shown in this embodiment
  • the temperature of the main heating device 30, the second circuit board 20 and the first circuit board 10 is significantly lower than that of the existing heat dissipation device.
  • the temperature of the main heater 30 is reduced from the existing 69.1° C. to 51.2° C., and the junction temperature gain is about 60%.
  • the junction temperature gain 100%-[(the temperature of the main heating element in this embodiment-the temperature of the middle plate in this embodiment)/(the temperature of the existing main heating element-the temperature of the existing middle plate)]. Therefore, the three-dimensional heat dissipation topology network constructed in the heat dissipation device 160 shown in this embodiment effectively reduces the temperature of the main heating device 30 and solves the problem of heat generation of the main heating device 30 .
  • FIG. 7 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under another embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive assembly 40 is connected between the first circuit board 10 and the second circuit board 20.
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that:
  • the fourth thermally conductive layer 22b is exposed to the bottom surface 25 of the substrate 21 .
  • the bottom surface (not marked) of the fourth thermal conductive layer 22 b is flush with the bottom surface 25 of the substrate 21 . It should be understood that the exposure of the fourth thermally conductive layer 22b relative to the bottom surface 21 of the substrate 21 means that the substrate 21 of the second circuit board 20 does not completely cover the fourth thermally conductive layer 22b.
  • the bottom surface of the fourth thermally conductive layer 22b is convex relative to the bottom surface 25 of the substrate 21 , or the bottom surface of the fourth thermally conductive layer 22b is recessed relative to the bottom surface 25 of the substrate 21 .
  • the main heating device 30 includes heat dissipation pins 31 and wires 33 .
  • the heat dissipation pins 31 are heat dissipation layers.
  • the heat dissipation pins 31 are connected to the fourth heat conduction layer 22b, that is, the main heating device 30 is connected to the fourth heat conduction layer 22b through the heat dissipation pins 31 to realize heat transfer between the main heat generation device 30 and the fourth heat conduction layer 22b.
  • the heat dissipation pins 31 are connected to the fourth thermal conductive layer 22b by means of die attach or die bond. At this time, the heat dissipation pins 31 are indirectly connected to the fourth thermal conductive layer 22b through the solder layer 32 .
  • the wire 33 is electrically connected to the fourth heat-conducting layer 22b, that is, the main heating device 30 is electrically connected to the fourth heat-conducting layer 22b through the wire 33, so as to realize the electrical connection between the main heating device 30 and the fourth heat-conducting layer 22b, thereby realizing the main heating Electrical communication between the device 30 and the second circuit board 20 .
  • the wires 33 are electrically connected to the fourth thermally conductive layer 22b by means of wire bonding (WB). Wherein, there may be two or more wires 33 .
  • FIG. 8 is a partial cross-sectional structural schematic diagram of the structure shown in FIG. 5 cut along the I-I direction under the third embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the second embodiment above, and the difference from the second embodiment above is that:
  • the second circuit board 20 includes a substrate 21 , three thermally conductive layers 22 and a second thermally conductive structure 23 .
  • the three-layer thermal conductive layer 22 and the second thermal conductive structure 23 are both embedded in the substrate 21 .
  • the three thermally conductive layers 22 are spaced apart from each other, the second thermally conductive structure 23 includes a plurality of thermally conductive members, and each thermally conductive member of the second thermally conductive structure 23 is connected between the two thermally conductive layers 22 .
  • the three thermally conductive layers 22 are respectively a third thermally conductive layer 22a, a fourth thermally conductive layer 22b and a fifth thermally conductive layer 22c.
  • the third thermally conductive layer 22 a is exposed relative to the top surface 24 of the substrate 21 .
  • the fourth heat-conducting layer 22b is located on the bottom side of the third heat-conducting layer 22a, is arranged in parallel with the third heat-conducting layer 22a and spaced apart, and is exposed relative to the bottom surface 25 of the substrate 21 .
  • the fifth heat-conducting layer 22c is located between the third heat-conducting layer 22a and the fourth heat-conducting layer 22b, and is arranged parallel to and spaced apart from the third heat-conducting layer 22a and the fourth heat-conducting layer 22b.
  • the third thermally conductive layer 22a, the fourth thermally conductive layer 22b and the fifth thermally conductive layer 22c are all ground layers.
  • the third thermally conductive layer 22a, the fourth thermally conductive layer 22b and the fifth thermally conductive layer 22c can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the third thermally conductive layer 22a, the fourth thermally conductive layer 22b and the The fifth thermally conductive layer 22c has higher thermal conductivity.
  • the thermally conductive member of the second thermally conductive structure 23 is connected between the third thermally conductive layer 22a and the fourth thermally conductive layer 22b, and part of the thermally conductive member of the second thermally conductive structure 23 is connected between the fourth thermally conductive layer 22b and the fifth thermally conductive layer 22c, In order to achieve heat transfer and electrical connection between the third thermally conductive layer 22a, the fourth thermally conductive layer 22b and the fifth thermally conductive layer 22c.
  • the plurality of heat-conducting members of the second heat-conducting structure 23 are respectively a first heat-conducting member 23a and a second heat-conducting member 23b.
  • the first heat-conducting member 23a is connected between the third heat-conducting layer 22a and the fifth heat-conducting layer 22c.
  • the thermally conductive member 23b is connected between the fourth thermally conductive layer 22b and the fifth thermally conductive layer 22c.
  • the plurality of first heat-conducting members 23a are spaced apart from each other to increase the heat transfer path between the third heat-conducting layer 22a and the fifth heat-conducting layer 22c and speed up the heat-transfer speed between the third heat-conducting layer 22a and the fifth heat-conducting layer 22c .
  • the plurality of second heat-conducting members 23b are spaced apart from each other to increase the heat transfer path between the fourth heat-conducting layer 22b and the fifth heat-conducting layer 22c and speed up the heat-transfer speed between the fourth heat-conducting layer 22b and the fifth heat-conducting layer 22c .
  • part of the heat-conducting components of the second heat-conducting structure 23 may also be connected between the third heat-conducting layer 22a and the fourth heat-conducting layer 22b, so as to shorten the space between the third heat-conducting layer 22a and the fourth heat-conducting layer 22b
  • the heat transfer path can improve the heat transfer efficiency between the two.
  • the heat generated by the main heating device 30 can be transferred to the fourth thermally conductive layer 22b through the heat dissipation pins 31, to the fifth thermally conductive layer 22c through the second thermally conductive member 23b, and to the fifth thermally conductive layer 22c through the first thermally conductive member 23a and the third thermally conductive member 23a.
  • the three thermally conductive layers 22a are transferred to the second thermally conductive block 41b, then transferred to the second thermally conductive layer 12b through the thermal interface material layer 42 and the first thermally conductive block 41a of the thermally conductive component 40, and then transferred to the second thermally conductive layer 12b through the first thermally conductive structure 13 and the first thermally conductive layer 12a
  • the heat transfer element 170 is finally transferred to the middle plate 115 through the heat transfer element 170 , so that the heat dissipation of the main heating element 30 can be realized.
  • the three-layer thermally conductive layer 22 and the second thermally conductive structure 23 of the second circuit board 20 , the two thermally conductive blocks 41 and the thermal interface material layer 42 of the thermally conductive component 40 , the two-layered thermally conductive layer 12 and the thermal interface material layer 42 of the first circuit board 10 The two thermally conductive structures 13 , the heat transfer member 170 and the middle plate 115 form a three-dimensional heat dissipation topology network.
  • the heat generated by the main heating device 30 during operation can be transferred to the three-dimensional heat dissipation topology network through the heat dissipation pins 31, and the three-dimensional heat dissipation topology network can evenly disperse the heat inside the electronic device 100, which can not only reduce the junction temperature of the main heating device 30, but also effectively It solves the problem of heat dissipation of the main heating device 30, improves the working efficiency and service life of the main heating device 30, and also prevents the main heating device 30 from forming a local hot spot on the housing 110 of the electronic device 100, and prevents the heat of the main heating device 30 from affecting the electronic equipment. Limitations applied by the device 100 .
  • FIG. 9 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the fourth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that: Along the Z-axis direction, the main heating device 30 and the second thermally conductive structure 23 at least partially overlap. At this time, the orthographic projections of the main heating device 30 and the second heat-conducting structure 23 on the fourth heat-conducting layer 22b at least partially overlap, which is helpful to shorten the heat generated by the main heating device 30 through the heat dissipation pins 31 of the main heating device 30 during operation.
  • the heat dissipation path transferred to the third thermally conductive layer 22 a further shortens the heat dissipation path for the heat generated by the main heating device 30 to be transferred to the middle plate 115 during operation, and improves the heat dissipation efficiency of the main heating device 30 .
  • FIG. 10 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the fifth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that:
  • the heat-conducting assembly 40 includes a heat-conducting column 43 , and there is one heat-conducting column 43 .
  • the thermally conductive pillars 43 are connected between the thermally conductive layer 12 of the first circuit board 10 and the thermally conductive layer 22 of the second circuit board 20 to achieve heat transfer and electrical connection between the first circuit board 10 and the second circuit board 20 .
  • the thermal conductive column 43 may be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure high thermal conductivity of the thermal conductive column 43 .
  • the thermally conductive post 43 is connected between the second thermally conductive layer 12b and the third thermally conductive layer 22a.
  • the thermally conductive pillar 43 is indirectly connected to the second thermally conductive layer 12b through the first connecting layer 80a, and is indirectly connected to the third thermally conductive layer 22a through the second connecting layer 80b.
  • the heat generated by the main heating device 30 during operation can be first transferred to the fourth thermal conductive layer 22b through the heat dissipation pins 31, and then transferred to the thermal conductive column 43 of the thermal conductive component 40 through the second thermal conductive structure 23 and the third thermal conductive layer 22a. , transferred to the second thermal conductive layer 12b via the thermal conductive column 43 of the thermal conductive component 40, transferred to the heat transfer member 170 via the first thermal conductive structure 13 and the first thermal conductive layer 12a, and finally transferred to the middle plate 115 via the heat transfer member 170 to achieve Heat dissipation to the main heating element 30 .
  • the two layers of thermal conduction layers 22 and the second thermal conduction structure 23 of the second circuit board 20 , the thermal conduction columns 43 of the thermal conduction component 40 , the two layers of thermal conduction layers 12 and the first thermal conduction structure 13 of the first circuit board 10 , and the heat transfer member 170 and the middle plate 115 form a three-dimensional heat dissipation topology network
  • the heat generated by the main heating device 30 during operation can be transferred to the three-dimensional heat dissipation topology network through the heat dissipation pins 31, and the three-dimensional heat dissipation topology network can disperse the heat inside the electronic device 100, not only can
  • the junction temperature of the main heating device 30 is reduced, the working efficiency and service life of the main heating device 30 are improved, and the main heating device 30 can also be prevented from forming a local hot spot on the housing 110 of the electronic device 100, and the heat of the main heating device 30 can be prevented from affecting the electronic equipment.
  • Device 100 applies the limitations of the environment.
  • FIG. 11 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the sixth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the fifth embodiment, and the difference from the fifth embodiment is that:
  • There are two thermally conductive pillars 43 the two thermally conductive pillars 43 are spaced apart from each other, and each thermally conductive pillar 43 is connected between the second thermally conductive layer 12b and the third thermally conductive layer 22a to increase the first circuit board 10 and the second thermally conductive layer
  • the heat transfer path between 12b and the third thermally conductive layer 22a improves the heat transfer efficiency between the first circuit board 10 and the second thermally conductive layer 12b and the third thermally conductive layer 22a.
  • the thermally conductive post 43 is connected to the second thermally conductive layer 12b and the third thermally conductive layer 22a through surface mounting technology (SMT), so as to realize heat transfer between the second thermally conductive layer 12b and the third thermally conductive layer 22a. transfer and electrical communication.
  • SMT surface mounting technology
  • the heat generated by the main heating device 30 during operation can be firstly transferred to the fourth thermally conductive layer 22b through the heat dissipation pins 31, and then transferred to the two thermally conductive components 40 through the second thermally conductive structure 23 and the third thermally conductive layer 22a.
  • the pillars 43 are transferred to the second thermally conductive layer 12b via the two thermally conductive pillars 43 of the thermally conductive component 40, and then transferred to the heat transfer member 170 via the first thermally conductive structure 13 and the first thermally conductive layer 12a, and finally transferred to the middle via the heat transfer member 170.
  • the plate 115 realizes heat dissipation to the main heating device 30 .
  • the heating element 170 and the middle plate 115 form a three-dimensional heat dissipation topology network.
  • the heat generated by the main heating element 30 during operation can be transferred to the three-dimensional heat dissipation topology network through the heat dissipation pins 31, and the three-dimensional heat dissipation topology network can disperse the heat inside the electronic device 100.
  • the junction temperature of the main heating device 30 can be reduced, the working efficiency and service life of the main heating device 30 can be improved, but also the main heating device 30 can be prevented from forming a local hot spot on the housing 110 of the electronic device 100, and the heat of the main heating device 30 can be avoided. Restrictions on application scenarios of the electronic device 100 .
  • FIG. 12 is a schematic partial cross-sectional structure diagram of the structure shown in FIG. 5 cut along the I-I direction under the seventh embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that:
  • the third thermally conductive layer 22 a is located between the top surface 24 and the bottom surface 25 of the substrate 21 , that is, the third thermally conductive layer 22 a is not exposed relative to the top surface 24 of the substrate 21 .
  • the thermally conductive assembly 40 includes a thermally conductive block 41 , a thermal interface material layer 42 and a packaged device 44 .
  • the thermally conductive block 41 is connected to the thermally conductive layer 12 of the first circuit board 10
  • the package device 44 is connected to the thermally conductive layer 22 of the second circuit board 20
  • the thermal interface material layer 42 is connected between the thermally conductive block 41 and the packaged device 44 .
  • the thermally conductive block 41 may also be connected to the thermally conductive layer 22 of the second circuit board 20
  • the package device 44 may be connected to the thermally conductive layer 12 of the first circuit board 10 .
  • the heat-conducting block 41 is connected to the second heat-conducting layer 12b, so as to realize heat transfer and electrical connection between the heat-conducting block 41 and the second heat-conducting layer 12b.
  • the thermally conductive block 41 is connected to the second thermally conductive layer 12b through the first connecting layer 80a.
  • the thermally conductive block 41 is made of metal materials such as copper, silver, aluminum alloy, magnesium or tin, so as to ensure that the thermally conductive block 41 has high thermal conductivity.
  • the packaged device 44 is connected to the third thermally conductive layer 22a.
  • the package device 44 may be a radio frequency front-end module, a WIFI Bluetooth communication module or a power management module.
  • the packaged device 44 includes a carrier board 441 , heat dissipation pins 442 , components 443 , heat dissipation pillars 444 and a package layer 445 .
  • the heat dissipation pins 442 are mounted on the bottom surface of the carrier board 441 (not shown).
  • the components 442 are mounted on the top surface of the carrier board 441 (not shown). Among them, there are two components 443, and the two components 443 are installed on the top surface of the carrier board at intervals.
  • the heat dissipation column 444 is mounted on the top surface of the carrier board 441 and is located between the two components 443 .
  • the encapsulation layer 445 covers the carrier board 441 , the components 443 and the heat dissipation pillars 444 .
  • the heat dissipation pillars 444 are exposed relative to the top surface (not shown) of the encapsulation layer 445 .
  • the top surface (not shown) of the heat dissipation pillar 444 is flush with the top surface of the encapsulation layer 445 . It should be understood that the exposure of the heat dissipation pillars 444 relative to the top surface of the encapsulation layer 445 means that the encapsulation layer 445 does not completely cover the heat dissipation pillars 444 .
  • the top surfaces of the heat dissipation pillars 444 may also be convex relative to the top surface of the encapsulation layer 445 , or the top surfaces of the heat dissipation pillars 444 may also be recessed relative to the top surface of the encapsulation layer 445 .
  • the encapsulation layer 445 is provided with a communication hole (not shown), and the communication hole exposes the carrier plate 441 relative to the encapsulation layer 445 .
  • the heat dissipation pillars 444 are located in the communication holes to be connected with the carrier board 441 .
  • the heat dissipation column 444 can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the heat dissipation column 444 has a high thermal conductivity.
  • the heat dissipation post 444 may be a metal post formed by filling the via hole with a metal material, or a metal layer formed by partially covering or completely covering the hole wall of the via hole with a metal material.
  • the carrier board 441 includes a base plate 446 , a heat dissipation layer 447 and a heat dissipation member 448 , and the heat dissipation layer 447 and the heat dissipation member 448 are both embedded in the base plate 446 .
  • the heat dissipation layer 447 can be made of metal materials such as copper, silver, aluminum, magnesium, or tin, so as to ensure that the heat dissipation layer 447 has high thermal conductivity.
  • Part of the heat dissipation member 448 is located on one side of the heat dissipation layer 447 and is connected between the heat dissipation layer 447 and the heat dissipation pin 31 .
  • Part of the heat dissipation member 448 is located on another layer of the heat dissipation layer 447 and is connected between the heat dissipation layer 447 and the heat dissipation column 444 .
  • the heat dissipation pins 442 , the heat dissipation members 448 and the heat dissipation layer 447 of the carrier board 441 and the heat dissipation pillars 444 form heat dissipation channels inside the package device 44 .
  • the substrate 446 is provided with a communication hole (not shown), and the communication hole exposes the heat dissipation layer 447 relative to the substrate 446 .
  • the heat dissipation member 448 is located in the communication hole to connect with the heat dissipation layer 447 .
  • the heat dissipation member 448 may be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the heat dissipation member 448 has high thermal conductivity.
  • the heat sink 448 may be a metal column formed by filling the via hole with a metal material, or a metal layer formed by partially covering or completely covering the hole wall of the via hole with a metal material.
  • the heat dissipation pillars 444 of the packaged device 44 are connected to the thermal interface material layer 42 to realize heat transfer and electrical connection between the packaged device 44 and the thermally conductive block 41 through the thermal interface material layer 42 .
  • the thermal interface material layer 42 covers the top surface (not shown) of the heat dissipation pillar 44 of the package device 44 and the top surface (not shown) of the package layer 445 .
  • a thermal interface material may be added between the package device 44 and the thermally conductive block 41 by means of mounting, dispensing or coating to form the thermal interface material layer 42 .
  • the package device 44 and the thermally conductive block 41 are indirectly connected through the thermal interface material layer 42 to achieve heat transfer and electrical connection.
  • the thermal interface material between the packaged device 44 and the thermally conductive block 41 can fill the air gap and tolerance redundancy between the thermally conductive pillar 444 of the packaged device 44 and the thermally conductive block 41 , reducing the gap between the thermally conductive pillar 444 of the packaged device 44 and the thermally conductive block 41
  • the interface thermal resistance improves the heat transfer efficiency.
  • the heat dissipation pins 442 of the packaged device 44 are connected to the third thermally conductive layer 22a to achieve heat transfer and electrical connection between the packaged device 44 and the third thermally conductive layer 22a. That is, the packaged device 44 can not only achieve heat transfer with the third thermal conductive layer 22 a through the heat dissipation pins 442 , but also can achieve electrical communication with the second circuit board 20 through the heat dissipation pins 442 . In some other embodiments, the heat dissipation pins 442 of the package device 44 may also be connected to the fourth thermal conductive layer 22b.
  • the heat dissipation pin 442 of the packaged device 44 has two functions of heat dissipation and grounding, that is, the heat dissipation pin 442 of the packaged device 44 is also used as the ground pin of the packaged device 44 .
  • the heat dissipation pins 442 of the package device 44 are connected to the third heat conduction layer 22a through the second connection layer 80b.
  • the second connection layer 80b is a solder layer.
  • the heat dissipation pins 442 of the packaged device 44 may be connected to the third thermally conductive layer 22a through a through molding via (TMV) process and a soldering process.
  • TMV through molding via
  • the heat generated by the main heating device 30 can be first transferred to the fourth thermal conductive layer 22b through the heat dissipation pins 31, and then transferred to the package device 44 in the thermal conductive assembly 40 through the second thermal conductive structure 23 and the third thermal conductive layer 22a.
  • the heat dissipation member 448 , the heat dissipation layer 447 and the heat dissipation column 444 of the package device 44 are transferred to the thermal interface material layer 42 of the thermal conductive component 40 , and transferred to the second thermal conductive layer 12 b via the thermal conductive block 41 of the thermal conductive component 40 , and passed through the first thermal conductive component 40 .
  • the structure 13 and the first thermal conductive layer 12 a are transferred to the heat transfer member 170 , and finally transferred to the middle plate 115 via the heat transfer member 170 , so as to realize heat dissipation to the main heating device 30 .
  • the thermal conductive layer 12, the first thermal conductive structure 13, the heat transfer member 170 and the middle plate 115 form a three-dimensional heat dissipation topology network.
  • the heat generated by the main heating device 30 during operation can be transferred to the three-dimensional heat dissipation topology network through the heat dissipation pins 31.
  • the three-dimensional heat dissipation topology can disperse heat inside the electronic device 100 , which can not only reduce the junction temperature of the main heating device 30 , improve the working efficiency and service life of the main heating device 30 , but also prevent the main heating device 30 from being in the housing 110 of the electronic device 100 .
  • a local hot spot is formed on the surface to avoid the restriction of the application of the electronic device 100 by the heat of the main heating device 30 .
  • the present embodiment utilizes the heat dissipation channel of the package device 44 itself and other components to form a three-dimensional heat dissipation topology network, which can reduce the number of heat conduction blocks 41 (as shown in the first embodiment) in the three-dimensional heat dissipation topology network, and can improve the first
  • the area utilization ratio of the second circuit board 20 is beneficial to the miniaturization design of the electronic device 100 .
  • FIG. 13 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the eighth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the seventh embodiment, and the difference from the seventh embodiment is that:
  • the packaged device 44 further includes an auxiliary heat dissipation layer 449, and the auxiliary heat dissipation layer 449 is connected between the heat dissipation column 444 and the thermal interface material layer 42, so that the packaged device 44 is indirectly connected to the thermally conductive block 41 through the auxiliary heat dissipation layer 449 and the thermal interface material layer 42. , to achieve heat transfer and electrical communication between the packaged device 44 and the thermally conductive block 41 .
  • the auxiliary heat dissipation layer 449 covers the top surface of the heat dissipation column 444 and the top surface of the packaging layer 445 .
  • the heat dissipation pins 442 of the packaged device 44 , the heat dissipation member 448 and the heat dissipation layer 447 of the carrier board 441 , the heat dissipation column 444 and the auxiliary heat dissipation layer 449 form a heat dissipation channel of the packaged device 44 .
  • FIG. 14 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the ninth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that:
  • the second heat-conducting structure 23 includes a chip, and the chip is connected between the two heat-conducting layers 12 of the second circuit board 20 to realize heat transfer and electrical communication between the two heat-conducting layers 12 .
  • the first thermally conductive structure 13 may also include a chip.
  • the chip includes a wafer layer 231 , a surface heat conduction layer 232 , solder fillets 233 and a packaging layer 234 .
  • the wafer layer 231 can be made of semiconductor materials such as silicon, gallium nitride or silicon carbide. At this time, the wafer layer 231 has good thermal conductivity, and the thermal conductivity is above 100 W/mk.
  • the surface heat conduction layer 232 is fixed to the bottom surface of the wafer layer 231 (not shown).
  • the surface heat-conducting layer 232 may be made of metal materials such as copper, silver, aluminum, magnesium, or tin, so as to ensure that the surface heat-conducting layer 232 has high thermal conductivity.
  • the solder pads 233 are fixed on the top surface of the wafer layer 231 (not shown). Wherein, there are a plurality of welding legs 233, and the plurality of welding legs 233 are arranged at intervals.
  • the encapsulation layer 234 covers the wafer layer 231 , the surface heat conduction layer 232 and the solder fillet 233 . At this time, the surface heat conduction layer 232, the wafer layer 231 and the solder fillet 233 form a heat dissipation channel inside the chip.
  • the surface heat conducting layer 232 is exposed relative to the bottom surface (not shown) of the encapsulation layer 234 and is connected to the fourth heat conducting layer 22b.
  • the bottom surface (not shown) of the surface heat conduction layer 232 is flush with the bottom surface of the encapsulation layer 234 . It should be understood that the exposure of the surface heat conduction layer 232 relative to the bottom surface of the encapsulation layer 234 means that the encapsulation layer 234 does not completely cover the surface heat conduction layer 232 .
  • the bottom surface of the thermally conductive surface layer 232 may also be convex relative to the bottom surface of the encapsulation layer 234 , or the bottom surface of the thermally conductive surface layer 232 may also be recessed relative to the bottom surface of the encapsulation layer 234 .
  • the solder pads 233 are exposed relative to the top surface (not shown) of the encapsulation layer 234 and are connected to the third thermal conductive layer 22a.
  • the top surface (not shown) of the solder fillet 233 is flush with the top surface of the encapsulation layer 234 . It should be understood that the exposure of the solder fillets 233 relative to the top surface of the encapsulation layer 234 means that the encapsulation layer 234 does not completely cover the solder fillets.
  • the top surface of the solder fillet 233 may also protrude relative to the top surface of the encapsulation layer 234 , or the top surface of the solder fillet 233 may also be recessed relative to the top surface of the encapsulation layer 234 .
  • the heat generated by the main heating device 30 during operation can be first transferred to the fourth thermal conductive layer 22b through the heat dissipation pins 31, then transferred to the chip through the fourth thermal conductive layer 22b, and passed through the surface thermal conductive layer 232 of the chip and the wafer layer.
  • 231 and the solder fillet 233 are transferred to the third thermally conductive layer 22a, then transferred to the second thermally conductive layer 12b via the thermally conductive component 40, and transferred to the heat transfer member 170 via the first thermally conductive structure 13 and the first thermally conductive layer 12a, and finally the heat transfer
  • the heat generating element 170 is transferred to the middle plate 115 to realize heat dissipation to the main heating element 30 .
  • the two thermally conductive layers 22 of the second circuit board 20 and the heat dissipation channels inside the chip, the thermally conductive component 40 , the two thermally conductive layers 12 and the first thermally conductive structure 13 of the first circuit board 10 , the heat transfer member 170 and the middle plate 115 forms a three-dimensional heat dissipation topology network
  • the heat generated by the main heating device 30 during operation can be transferred to the heat dissipation topology network through the heat dissipation pins 31, and the three-dimensional heat dissipation topology network can disperse the heat inside the electronic device 100, which can not only reduce the main heating device 30.
  • the junction temperature of the main heating device 30 can be increased, the working efficiency and service life of the main heating device 30 can be improved, and local hot spots can be prevented from being formed on the housing 110 of the electronic device 100 by the main heating device 30, and the application of the electronic device 100 by the heat of the main heating device 30 can be avoided. .
  • the heat dissipation channel of the chip itself is used to replace the metal column or metal layer used in the second heat conduction structure 23 of the second circuit board 20 shown in the above-mentioned embodiment.
  • the thermal conductivity can effectively reduce the thermal resistance of the three-dimensional heat dissipation topology network formed by the heat dissipation channel of the chip itself and other components, and achieve effective heat dissipation to the main heating device 30 .
  • the size of the chip in the plane direction is between 500 ⁇ m and 5000 ⁇ m, and the size in the thickness direction is between 50 ⁇ m and 500 ⁇ m, the high-density integration of high thermal conductivity materials in the heat dissipation topology network is realized, and the second circuit board 20 is increased.
  • the benefit of area utilization improves the integration level of the heat sink 160 .
  • FIG. 15 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the tenth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the ninth embodiment, and the difference from the ninth embodiment is that:
  • the surface thermal conductive layer 232 is connected to the third thermal conductive layer 22a, and the solder pins 233 are connected to the fourth thermal conductive layer 22b, so that the chip is connected between the fourth thermal conductive layer 22b and the third thermal conductive layer 22a, and the fourth thermal conductive layer 22b and the third thermal conductive layer 22a are realized. Heat transfer and electrical connection between the three thermally conductive layers 22a.
  • the heat generated by the main heating device 30 during operation can be transferred to the fourth thermal conductive layer 22b through the heat dissipation pins 31 first, then transferred to the chip through the fourth thermal conductive layer 22b, and then passed through the solder pins 233 of the chip and the wafer layer 231.
  • the heat generating element 170 is transferred to the middle plate 115 to realize heat dissipation to the main heating element 30 .
  • FIG. 16 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the eleventh embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that:
  • the first heat-conducting structure 13 includes a chip, and the chip is connected between the two heat-conducting layers 12 of the first circuit board 10 to realize heat transfer and electrical communication between the two heat-conducting layers 12 .
  • the chip includes a wafer layer 131 , a surface heat conduction layer 132 , solder fillets 133 and a packaging layer 134 .
  • the wafer layer 131 can be made of semiconductor materials such as silicon, gallium nitride or silicon carbide. At this time, the wafer layer 131 has good thermal conductivity, and the thermal conductivity is above 100 W/mk.
  • the surface heat conduction layer 132 is fixed on the bottom surface of the wafer layer 131 (not shown).
  • the surface heat conduction layer 132 may be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the surface heat conduction layer 132 has high thermal conductivity.
  • the solder pads 133 are fixed on the top surface of the wafer layer 131 (not shown).
  • the packaging layer 134 covers the wafer layer 131 , the surface heat conduction layer 132 and the solder fillet 133 . At this time, the surface heat conduction layer 132 , the wafer layer 131 and the solder fillet 133 form a heat dissipation channel inside the chip.
  • the surface heat-conducting layer 132 is exposed relative to the bottom surface (not marked) of the encapsulation layer 134 and is connected to the second heat-conducting layer 12b.
  • the bottom surface (not shown) of the surface heat conduction layer 132 is flush with the bottom surface of the encapsulation layer 134 . It should be understood that the exposure of the surface heat conduction layer 132 relative to the bottom surface of the encapsulation layer 134 means that the encapsulation layer 134 does not completely cover the surface heat conduction layer 132 .
  • the bottom surface of the thermally conductive surface layer 132 may also be convex relative to the bottom surface of the encapsulation layer 134 , or the bottom surface of the thermally conductive surface layer 132 may also be recessed relative to the bottom surface of the encapsulation layer 134 .
  • the solder pads 133 are exposed relative to the top surface (not shown) of the encapsulation layer 134 and are connected to the first heat conducting layer 12a.
  • the top surface (not shown) of the solder fillet 133 is flush with the top surface of the encapsulation layer 134 . It should be understood that the exposure of the solder fillet 133 relative to the top surface of the encapsulation layer 134 means that the encapsulation layer 134 does not completely cover the solder fillet.
  • the top surface of the solder fillet 133 may also protrude relative to the top surface of the encapsulation layer 134 , or the top surface of the solder fillet 133 may also be recessed relative to the top surface of the encapsulation layer 134 .
  • the heat generated by the main heating device 30 can be firstly transferred to the fourth thermal conductive layer 22b through the heat dissipation pins 31, then transferred to the thermal conductive component 40 through the second thermal conductive structure 23 and the third thermal conductive layer 22a, and then transferred to the thermal conductive component 40 through the thermal conductive structure 23 and the third thermal conductive layer 22a.
  • the component 40 is transferred to the second thermal conductive layer 12b, transferred to the chip via the second thermal conductive layer 12b, transferred to the heat transfer member 170 via the surface thermal conductive layer 132 of the chip, the wafer layer 131, the solder fillet 133 and the first thermal conductive layer 12a, and finally The heat is transferred to the middle plate 115 through the heat transfer member 170 to realize heat dissipation to the main heating device 30 .
  • the two thermally conductive layers 22 and the second thermally conductive structure 23 of the second circuit board 20 , the thermally conductive component 40 , the two thermally conductive layers 12 of the first circuit board 10 , the heat dissipation channel inside the chip, the heat transfer member 170 and the middle plate 115 forms a three-dimensional heat dissipation topology network
  • the heat generated by the main heating device 30 during operation can be transferred to the heat dissipation topology network through the heat dissipation pins 31, and the three-dimensional heat dissipation topology network can disperse the heat inside the electronic device 100, which can not only reduce the main heating device 30.
  • the junction temperature of the main heating device 30 can be increased, the working efficiency and service life of the main heating device 30 can be improved, and local hot spots can be prevented from being formed on the housing 110 of the electronic device 100 by the main heating device 30, and the application of the electronic device 100 by the heat of the main heating device 30 can be avoided. .
  • the heat dissipation channel of the chip itself is used to replace the metal column or metal layer used in the first heat conduction structure 13 of the first circuit board 10 shown in the above embodiment, because the wafer layer 131 of the chip has better good
  • the thermal conductivity can effectively reduce the thermal resistance of the three-dimensional heat dissipation topology network formed by the heat dissipation channel of the chip itself and other components, and achieve effective heat dissipation to the main heating device 30 .
  • the size of the chip in the plane direction is between 500 ⁇ m and 5000 ⁇ m, and the size in the thickness direction is between 50 ⁇ m and 500 ⁇ m, the high-density integration of high thermal conductivity materials in the heat dissipation topology network is realized, and the first circuit board 10 is increased.
  • the benefit of area utilization improves the integration level of the heat sink 160 .
  • the surface thermal conductive layer 132 of the chip can be connected to the first thermal conductive layer 12a, and the solder pins 133 of the chip can be connected to the second thermal conductive layer 12b, so that the chip is connected to the second thermal conductive layer 22b and the first thermal conductive layer 12b. between layers 12a.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that:
  • the first circuit board 10 includes a substrate 11 , a three-layer thermal conduction layer 12 and a first thermal conduction structure 13 , and the three-layer thermal conduction layer 12 and the first thermal conduction structure 13 are both embedded in the substrate 11 .
  • the three thermally conductive layers 12 are spaced apart from each other, the first thermally conductive structure 13 includes a plurality of thermally conductive members, and each thermally conductive member of the first thermally conductive structure 13 is connected between the two thermally conductive layers 12 .
  • the three-layer heat-conducting layers 12 are respectively a first heat-conducting layer 12a, a second heat-conducting layer 12b, and a sixth heat-conducting layer 12c.
  • the first thermally conductive layer 12a is exposed relative to the top surface 14 of the substrate 11 .
  • Both the second thermally conductive layer 12b and the sixth thermally conductive layer 12c are located on the bottom side of the first thermally conductive layer 12a, are arranged parallel to and spaced from the first thermally conductive layer 12a, and are exposed relative to the bottom surface 15 of the substrate 11 .
  • the first thermal conductive layer 12a, the second thermal conductive layer 12b and the sixth thermal conductive layer 12c are all ground layers.
  • the first thermally conductive layer 12a, the second thermally conductive layer 12b and the sixth thermally conductive layer 12c can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure the first thermally conductive layer 12a and the second thermally conductive layer 12b.
  • the third thermally conductive layer 12b has higher thermal conductivity.
  • Part of the thermally conductive member of the first thermally conductive structure 13 is connected between the first thermally conductive layer 12a and the second thermally conductive layer 12b, and part of the thermally conductive member of the first thermally conductive structure 13 is connected between the first thermally conductive layer 12a and the sixth thermally conductive layer 12c, In order to realize the connection between the first thermally conductive layer 12a, the second thermally conductive layer 12b and the sixth thermally conductive layer 12c.
  • the plurality of thermally conductive members of the first thermally conductive structure 13 are respectively a first thermally conductive member 13a and a second thermally conductive member 13b, the first thermally conductive member 13a is connected between the first thermally conductive layer 12a and the second thermally conductive layer 12b, and the second thermally conductive member 13a
  • the thermally conductive member 13b is connected between the first thermally conductive layer 12a and the sixth thermally conductive layer 12c.
  • part of the thermally conductive members of the first thermally conductive structure 13 may also be connected between the second thermally conductive layer 12b and the sixth thermally conductive layer 12c.
  • first heat conducting members 13a and second heat conducting members 13b there are multiple first heat conducting members 13a and second heat conducting members 13b.
  • the plurality of first heat-conducting members 13a are spaced apart from each other to increase the heat transfer path between the first heat-conducting layer 12a and the second heat-conducting layer 12b and speed up the heat-transfer speed between the first heat-conducting layer 12a and the second heat-conducting layer 12b .
  • the plurality of second heat-conducting members 13b are spaced apart from each other to increase the heat transfer path between the first heat-conducting layer 12a and the sixth heat-conducting layer 12c and speed up the heat-transfer speed between the second heat-conducting layer 12b and the sixth heat-conducting layer 12c .
  • the substrate 11 is provided with a plurality of first communication holes (not shown) and a plurality of second communication holes (not shown).
  • the first communication hole communicates with the first heat conduction layer 12a and the second heat conduction layer 12b
  • the second communication hole communicates with the first heat conduction layer 12a and the third heat conduction layer 12c.
  • each first heat-conducting member 13a is located in a first communication hole to connect the first heat-conducting layer 12a and the second heat-conducting layer 12b.
  • Each of the second heat-conducting members 13b is located in a second communication hole to connect the first heat-conducting layer 12a and the sixth heat-conducting layer 12c.
  • the first heat-conducting member 13a and the second heat-conducting member 13b can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the first heat-conducting member 13a and the second heat-conducting member 13b have high thermal conductivity , to improve the heat transfer efficiency between the first thermally conductive layer 12a, the second thermally conductive layer 12b and the third thermally conductive layer 13c.
  • the first thermally conductive member 13a and the second thermally conductive member 13b may be metal pillars formed by filling the communication holes with a metal material, or the first thermally conductive member 13a and the second thermally conductive member 13b may be partially covered with a metal material or A metal layer formed by completely covering the hole walls of the vias.
  • the second circuit board 20 includes a substrate 21 , a three-layer thermally conductive layer 22 , a second thermally conductive structure 23 and an auxiliary thermally conductive layer 26 .
  • the three-layer heat-conducting layers 22 and the second heat-conducting structure 23 are both embedded in the substrate 21 , and the three-layer heat-conducting layers 22 are spaced apart from each other.
  • the auxiliary heat conducting layer 26 is fixed on the top surface 24 of the substrate 21 .
  • the second heat-conducting structure 23 includes a plurality of heat-conducting members, some of the heat-conducting members of the second heat-conducting structure 23 are connected between the two heat-conducting layers 22 , and some of the heat-conducting members of the second heat-conducting structure 23 are connected between the heat-conducting layer 23 and the auxiliary heat-conducting layer 26 . between.
  • the three thermally conductive layers 22 are all located between the top surface 24 and the top surface 25 of the substrate 21 , and the three thermally conductive layers 22 are respectively a third thermally conductive layer 22a, a fourth thermally conductive layer 22b and a fifth thermally conductive layer 22c.
  • the fourth thermally conductive layer 22b is located on the bottom side of the third thermally conductive layer 22a, is parallel to and spaced from the third thermally conductive layer 22a, and is located between the bottom surface 25 and the top surface 24 of the substrate 21 .
  • the fifth thermally conductive layer 22c is located on the top side of the fourth thermally conductive layer 22b, and is disposed parallel to and spaced from the fourth thermally conductive layer 22b.
  • the third thermal conductive layer 22a, the fourth thermal conductive layer 22b and the fifth thermal conductive layer 22c are all ground layers.
  • the third thermally conductive layer 22a, the fourth thermally conductive layer 22b and the fifth thermally conductive layer 22c can be made of metal materials such as copper, silver, aluminum, magnesium or tin to ensure the third thermally conductive layer 22a, the fourth thermally conductive layer 22b And the fifth thermally conductive layer 22c has higher thermal conductivity.
  • the auxiliary heat conduction layer 26 covers the top surface 24 of the substrate 21 to improve the heat dissipation efficiency of the heat dissipation device 160 .
  • the auxiliary heat-conducting layer 27 and the third heat-conducting layer 22a are arranged in parallel and spaced apart.
  • the auxiliary heat conduction layer 26 is a ground layer.
  • the auxiliary heat conduction layer 26 may be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the auxiliary heat conduction layer 26 has a high thermal conductivity.
  • Part of the thermally conductive member of the second thermally conductive structure 23 is connected between the first thermally conductive layer 22a and the fifth thermally conductive layer 22c, and part of the thermally conductive member of the second thermally conductive structure 23 is connected between the fifth thermally conductive layer 22c and the fourth thermally conductive layer 22b, Part of the thermally conductive member of the second thermally conductive structure 23 is connected between the third thermally conductive layer 22a and the auxiliary thermally conductive layer 26, and part of the thermally conductive member of the second thermally conductive structure 23 is connected between the fifth thermally conductive layer 22c and the auxiliary thermally conductive layer 26, so as to realize Pairwise connections between the third thermally conductive layer 22a, the fourth thermally conductive layer 22b, the fifth thermally conductive layer 22c and the auxiliary thermally conductive layer 26.
  • part of the heat-conducting members of the second heat-conducting structure 23 may be connected between the auxiliary heat-conducting layer 26 and the fourth heat-conducting layer 22b, and/or part of the heat-conducting members of the second heat-conducting structure 23 may be connected to the first heat-conducting layer 26 and the fourth heat-conducting layer 22b. between the three thermally conductive layers 22a and the fifth thermally conductive layer 22c.
  • the second heat conducting structures 23 are respectively a first heat conducting member 23a, a second heat conducting member 23b, a third heat conducting member 23c and a fourth heat conducting member 23d, and the first heat conducting member 23a is connected to the third heat conducting layer 22a and the fourth heat conducting member 23a.
  • the second heat-conducting member 23b is connected between the fifth heat-conducting layer 22c and the fourth heat-conducting layer 22b
  • the third heat-conducting member 23c is connected between the third heat-conducting layer 22a and the auxiliary heat-conducting layer 26
  • the fourth heat-conducting member 23d is connected between the fifth thermally conductive layer 22c and the auxiliary thermally conductive layer 26 .
  • first heat conducting members 23a there are multiple first heat conducting members 23a, second heat conducting members 23b, third heat conducting members 23c and fourth heat conducting members 23d.
  • the plurality of first heat-conducting members 23a are spaced apart from each other to increase the heat transfer path between the third heat-conducting layer 22a and the fourth heat-conducting layer 22b and speed up the heat-transfer speed between the third heat-conducting layer 22a and the fourth heat-conducting layer 22b .
  • the plurality of second heat-conducting members 23b are spaced apart from each other to increase the heat transfer path between the fourth heat-conducting layer 22b and the fifth heat-conducting layer 22c and speed up the heat-transfer speed between the fourth heat-conducting layer 22b and the fifth heat-conducting layer 22c .
  • the plurality of third heat-conducting members 23c are spaced apart from each other to increase the heat transfer path between the third heat-conducting layer 22a and the auxiliary heat-conducting layer 26 and speed up the heat-transfer speed between the third heat-conducting layer 22a and the auxiliary heat-conducting layer 26 .
  • the plurality of fourth heat-conducting members 23d are spaced apart from each other to increase the heat transfer path between the fifth heat-conducting layer 22c and the auxiliary heat-conducting layer 26 and speed up the heat-transfer speed between the fifth heat-conducting layer 22c and the auxiliary heat-conducting layer 26 .
  • the substrate 21 is provided with a plurality of first communication holes (not shown), a plurality of second communication holes (not shown), a plurality of third communication holes (not shown) and a plurality of fourth communication holes. hole (not shown).
  • the first communication hole communicates with the third heat conduction layer 22a and the fourth heat conduction layer 22b
  • the second communication hole communicates with the fourth heat conduction layer 22b and the fifth heat conduction layer 22c
  • the third communication hole exposes the third heat conduction layer 22a relative to the substrate 11
  • the fourth communication hole exposes the fifth thermally conductive layer 22 c with respect to the substrate 11 .
  • each first heat-conducting member 23a is located in a first communication hole
  • each second heat-conducting member 23b is located in a second communication hole
  • each third heat-conducting member 23c is located in a third communication hole
  • each fourth heat-conducting member 23c is located in a third communication hole.
  • the piece 23d is located in a fourth communication hole.
  • the first communication hole and the second communication hole are via holes or buried holes
  • the third communication hole and the fourth communication hole are blind holes.
  • the first heat-conducting member 23a, the second heat-conducting member 23b, the third heat-conducting member 23c and the fourth heat-conducting member 23d can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the first heat-conducting member 23a, The second heat-conducting member 23b, the third heat-conducting member 23c and the fourth heat-conducting member 23d have higher thermal conductivity, which improves the gap between the third heat-conducting layer 22a, the fourth heat-conducting layer 22b, the third heat-conducting layer 23c and the auxiliary heat-conducting layer 26 heat transfer efficiency.
  • the first thermally conductive member 23a, the second thermally conductive member 23b, the third thermally conductive member 23c and the fourth thermally conductive member 23d may be metal pillars formed by filling the corresponding communication holes with metal materials, or the first thermally conductive member 23a
  • the second thermally conductive member 23b, the third thermally conductive member 23c and the fourth thermally conductive member 23d may be metal layers formed by partially covering or completely covering the hole walls of the corresponding communication holes with metal materials.
  • the heat dissipation device 160 further includes a flexible printed circuit (FPC) 162, and the flexible printed circuit 162 is electrically connected between the first circuit board 10 and the second circuit board 20 to realize the first circuit board 10
  • the electrical communication between the first circuit board 10 and the second circuit board 20 is realized to realize the communication connection between the first circuit board 10 and the second circuit board 20 .
  • the first circuit board 10 and the second circuit board 20 may also implement electrical communication through the signal frame board structure.
  • the thermally conductive assembly 40 includes thermally conductive pillars 43 , and the thermally conductive pillars 43 are all connected between the first circuit board 10 and the second circuit board 20 .
  • each thermally conductive post 43 is indirectly connected to the first circuit board 10 through the first connection layer 80a, and indirectly connected to the second circuit board 20 through the second connection layer 80b.
  • the thermal conductive column 43 is made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the thermal conductive column 43 has high thermal conductivity.
  • the thermally conductive pillars 43 are connected between the second thermally conductive layer 12b and the auxiliary thermally conductive layer 26 of the second circuit board 20 to realize heat transfer between the second thermally conductive layer 12b and the auxiliary thermally conductive layer 26 of the second circuit board 20 .
  • the thermally conductive pillars 43 are both electrically connected to the ground layers of the first circuit board 10 and the second circuit board 20 , so the thermally conductive pillars 43 are also in a grounded state.
  • the two support columns 50 are a first support column 50a and a second support column 50b, respectively.
  • the first support column 50a is connected between the sixth thermally conductive layer 12c of the first circuit board 10 and the auxiliary thermally conductive layer 26 of the second circuit board 20 to realize the sixth thermally conductive layer 12c of the first circuit board 10 and the second circuit board Heat transfer and electrical connection between auxiliary thermally conductive layers 26 of 20 .
  • the second support column 50 a is connected between the substrate 11 of the first circuit board 10 and the auxiliary heat conduction layer 26 of the second circuit board 20 .
  • the first support column 50a is electrically connected to the ground layer of the second circuit board 20, so the first support column 50a is also in a grounded state.
  • FIG. 18 is a partial structural schematic diagram of the orthographic projection of the thermally conductive component 40 and the first component 60 on the bottom surface of the first circuit board 10 in one embodiment in the structure shown in FIG. 17 .
  • a first component 60 is located between the thermally conductive column 43 and the first support column 50a.
  • the heat conduction column 43 and the first support column 50a are located on both sides of the functional device, and both are grounded, and can form an electromagnetic shielding structure of the first component 60 with the auxiliary heat conduction layer 26 of the first circuit board 10, and has a certain The electromagnetic shielding function can prevent the electromagnetic interference of the external device to the first component 60, or prevent the first component 60 from causing electromagnetic interference to other devices.
  • the shape of the thermally conductive column 43 is not limited to the square column shape shown in FIG. 19 , and may also be a cylindrical shape or other anomalous column shapes.
  • FIG. 19 is a partial structural schematic diagram of the orthographic projection of the thermally conductive component 40 and the first component 60 on the bottom surface of the first circuit board 10 in another embodiment in the structure shown in FIG. 17 .
  • both the heat conduction column 43 and the first support column 50a are plural.
  • the plurality of thermally conductive pillars 43 and the plurality of first support pillars 50a are arranged around the first component 60 at intervals.
  • the plurality of thermally conductive pillars 43 and the plurality of first support pillars 50a and the auxiliary thermally conductive layer 26 of the second circuit board 20 can form an electromagnetic shielding structure for the first component 60, which can prevent the electromagnetic shielding structure of the first component 60 from external devices. interference, or avoid electromagnetic interference caused by the first component 60 to other devices.
  • the shape of the thermally conductive column 43 is not limited to the cylindrical shape shown in FIG. 19 , and may also be a square column shape or other special-shaped column shapes.
  • thermally conductive column 43 there may be only one thermally conductive column 43, and the rest are the first support columns 50a, or, there may be only one first support column 50a, and the rest are all the thermally conductive columns 43, which are not specifically limited in this application. .
  • FIG. 20 is a partial structural schematic diagram of the orthographic projection of the thermally conductive component 40 and the first component 60 on the bottom surface of the first circuit board 10 in the third embodiment in the structure shown in FIG. 17 .
  • a plurality of thermally conductive columns 43 and a plurality of first support columns 50 a are fixedly connected to each other to form a thermally conductive frame 45 , and the first component 60 is located inside the thermally conductive frame 45 .
  • the plurality of heat-conducting columns 43 and the plurality of first support columns 50a may be integrally formed to form the heat-conducting frame 45 .
  • the thermal conductive frame 45 and the auxiliary thermal conductive layer 26 of the second circuit board 20 can form an electromagnetic shielding structure of the first component 60 to protect the functional device in all directions, and can prevent the electromagnetic interference of the external device to the first component 60. Alternatively, electromagnetic interference caused by the first component 60 to other devices is avoided.
  • the shape of the metal frame 45 is not limited to the square ring shown in FIG. 20 , and may also be a circular ring or other special-shaped rings.
  • the heat generated by the main heating device 30 during operation can be first transferred to the fourth thermal conductive layer 22b through the heat dissipation pins 31, and then transferred to the fourth thermal conductive layer 22b through the first thermal conductive member 23a and the second thermal conductive member 23b, respectively.
  • the three thermally conductive layers 23c and the third thermally conductive layer 23c are transferred to the auxiliary thermally conductive layer 26 of the second circuit board 20 through the third thermally conductive member 23c and the fourth thermally conductive member 23d of the second circuit board 20 , and then passed through the thermally conductive column of the thermally conductive component 40 43 and the first support column 50a are transferred to the second thermally conductive layer 12b and the sixth thermally conductive layer 12c respectively, and are transferred to the first thermally conductive layer 12a through the first thermally conductive member 13a and the second thermally conductive member 13b of the first circuit board 10, and finally The heat transfer member 170 is transferred to the middle plate 115 to realize heat dissipation to the main heating device 30 .
  • the heat transfer member 170 and the middle plate 115 form a three-dimensional heat dissipation topology network, the heat generated by the main heating device 30 during operation can be transferred to the heat dissipation topology network through the heat dissipation pins 31, and the three-dimensional heat dissipation topology network can dissipate the heat.
  • Dispersing inside the electronic device 100 can not only reduce the junction temperature of the main heating device 30 , improve the working efficiency and service life of the main heating device 30 , but also prevent the main heating device 30 from forming local hot spots on the housing 110 of the electronic device 100 , to avoid the limitation of the application of the electronic device 100 by the heat of the main heating element 30 .
  • the flexible circuit board 162 is used to realize signal communication between the second circuit board 20 and the first circuit board 10 , so that there is no need to use hard contact between the second circuit board 20 and the first circuit board 10 realization of signal transmission.
  • the thermal conductive column 43 in the thermal conductive assembly 40 can be connected to the thermal conductive layer 22 of the second circuit board 20 and the auxiliary thermal conductive layer 26 of the first circuit board 10 by welding, which can reduce the introduction of thermal interface materials and help reduce the The thermal resistance of the three-dimensional heat dissipation topology network, thereby reducing the junction temperature of the main heating device 30 .
  • the thermally conductive pillars 43 of the thermally conductive component 40 and the auxiliary thermally conductive layer 26 of the second circuit board 20 can form an electromagnetic shielding structure of the first component 60 to play an electromagnetic shielding role.
  • FIG. 21 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the thirteenth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that:
  • the first thermal conductive layer 12 a is located between the top surface 14 and the bottom surface 15 of the substrate 11 , that is, the first thermal conductive layer 12 a of the second circuit board 10 is not exposed relative to the top surface 14 of the substrate 11 .
  • the heat transfer member 170 includes a packaged device.
  • the packaged device may be a radio frequency front-end module, a WIFI Bluetooth communication module or a power management module.
  • the packaged device includes a carrier board 172 , heat dissipation pins 173 , components 174 , heat dissipation pillars 175 and a package layer 176 .
  • the heat dissipation pins 173 are mounted on the bottom surface of the carrier board 172 (not shown).
  • the components 173 are mounted on the top surface of the carrier board 172 (not shown). Among them, there are two components 174, and the two components 174 are installed on the top surface of the carrier board at intervals.
  • the heat dissipation column 175 is mounted on the top surface of the carrier board 172 and is located between the two components 174 .
  • the encapsulation layer 176 covers the carrier board 172 , the components 174 and the heat dissipation pillars 175 .
  • the heat dissipation pillar 175 is exposed relative to the top surface (not shown) of the encapsulation layer 176 .
  • the top surface (not shown) of the heat dissipation pillar 175 is flush with the top surface of the encapsulation layer 176 . It should be understood that the exposure of the heat dissipation pillars 175 relative to the top surface of the encapsulation layer 176 means that the encapsulation layer 176 does not completely cover the heat dissipation pillars 175 .
  • the top surfaces of the heat dissipation pillars 175 may also be convex relative to the top surface of the encapsulation layer 176 , or the top surfaces of the heat dissipation pillars 175 may also be recessed relative to the top surface of the encapsulation layer 176 .
  • the encapsulation layer 176 is provided with a communication hole (not shown), and the communication hole exposes the carrier plate 172 relative to the encapsulation layer 176 .
  • the heat dissipation post 175 is located in the communication hole to be connected with the carrier board 172 .
  • the heat dissipation column 175 may be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the heat dissipation column 175 has a high thermal conductivity.
  • the heat dissipation post 175 may be a metal post formed by filling the via hole with a metal material, or a metal layer formed by partially covering or completely covering the hole wall of the via hole with a metal material.
  • the carrier board 172 includes a base plate 177 , a heat dissipation layer 178 and a heat dissipation member 179 , and the heat dissipation layer 178 and the heat dissipation member 179 are both embedded in the base plate 177 .
  • the heat dissipation layer 178 may be made of metal materials such as copper, silver, aluminum, magnesium, or tin, so as to ensure that the heat dissipation layer 178 has high thermal conductivity.
  • Part of the heat dissipation member 179 is located on one side of the heat dissipation layer 178 and is connected between the heat dissipation layer 178 and the heat dissipation pin 31 .
  • Part of the heat dissipation member 179 is located on another layer of the heat dissipation layer 178 and is connected between the heat dissipation layer 178 and the heat dissipation column 175 .
  • the heat dissipation pins 173 , the heat dissipation members 179 and the heat dissipation layer 178 of the carrier board 172 and the heat dissipation pillars 175 form a heat dissipation channel of the packaged device.
  • the substrate 177 is provided with a communication hole (not shown), and the communication hole exposes the heat dissipation layer 178 relative to the substrate 177 .
  • the heat dissipation member 179 is located in the communication hole to connect with the heat dissipation layer 178 .
  • the heat dissipation member 179 may be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the heat dissipation member 179 has high thermal conductivity.
  • the heat sink 179 may be a metal column formed by filling the via hole with a metal material, or a metal layer formed by partially covering or completely covering the hole wall of the via hole with a metal material.
  • the heat dissipation column 175 of the packaged device is connected to the middle board 115 to realize heat transfer and electrical communication between the packaged device and the middle board 115 .
  • the heat dissipation column 175 of the packaged device is connected to the middle plate 115 through the first heat transfer layer 180a.
  • the first heat transfer layer 180a covers the top surface (not shown) of the heat dissipation pillar 175 of the packaged device and the top surface (not shown) of the packaging layer 176 .
  • the first heat transfer layer 180a is a thermal interface material layer. Wherein, a thermal interface material may be added between the packaged device and the mid-board 115 by means of mounting, dispensing or coating to form the first heat transfer layer 180a.
  • the packaged device and the middle board 115 are indirectly connected through the first heat transfer layer 180a to achieve heat transfer and electrical connection.
  • the thermal interface material between the packaged device and the midplane 115 can fill the air gaps and tolerance redundancy between the packaged device heatsink studs 175 and the midplane 115, reducing interface heat between the packaged device heatsink studs 175 and the midplane 115 resistance to improve heat transfer efficiency.
  • the heat dissipation pins 173 of the packaged device are connected to the first thermally conductive layer 12a to realize heat transfer and electrical connection between the packaged device and the first thermally conductive layer 12a. That is, the packaged device can not only achieve heat transfer with the first heat conduction layer 12 a through the heat dissipation pins 173 , but also can achieve electrical communication with the first circuit board 10 through the heat dissipation pins 173 . In some other embodiments, the heat dissipation pins 172 of the packaged device may also be connected to the second thermal conductive layer 12b.
  • the heat dissipation pin 173 of the packaged device has two functions of heat dissipation and grounding, that is, the heat dissipation pin 173 of the packaged device is also used as the grounding pin of the packaged device.
  • the heat dissipation pins 172 of the packaged device are connected to the first heat conduction layer 12a through the second heat conduction layer 180b.
  • the second heat transfer layer 180b is a solder layer.
  • the heat dissipation pins 173 of the packaged device can be connected to the first thermal conductive layer 12a through a through molding via (TMV) process and a soldering process of the packaged device.
  • TMV through molding via
  • the heat transfer member 170 may further comprise a heat transfer block. There is one heat transfer block, and one heat transfer block is connected between the heat dissipation channel of the packaged device and the middle plate 115 , or one heat transfer block is connected between the heat dissipation channel of the packaged device and the first heat conduction layer 12a. Alternatively, there are two heat transfer blocks, one heat transfer block is connected between the heat dissipation channel of the packaged device and the middle plate 115 , and the other heat transfer block is connected between the heat dissipation channel of the packaged device and the first heat conducting layer 12a.
  • the heat generated by the main heating device 30 can be firstly transferred to the fourth thermally conductive layer 22b through the heat dissipation pins 31, then transferred to the thermally conductive component 40 through the second thermally conductive structure 23 and the third thermally conductive layer 22a, and then passed through the thermally conductive component.
  • 40 is transferred to the second thermally conductive layer 12b, and then transferred to the packaged device through the first thermally conductive structure 13 and the first thermally conductive layer 12a, and finally transferred to the middle plate 115 through the heat sink 179, the heat dissipation layer 178 and the heat dissipation column 175 of the packaged device, so as to realize Heat dissipation to the main heating element 30 .
  • the board 115 forms a three-dimensional heat dissipation topology network.
  • the heat generated by the main heating device 30 during operation can be transferred to the three-dimensional heat dissipation topology network through the heat dissipation pins 31.
  • the three-dimensional heat dissipation topology network can disperse the heat inside the electronic device 100, which can not only reduce the main heat generation.
  • the junction temperature of the device 30 can improve the working efficiency and service life of the main heating device 30 , and can also prevent the main heating device 30 from forming local hot spots on the housing 110 of the electronic device 100 , and prevent the heat of the main heating device 30 from being applied to the electronic device 100 . limits.
  • this embodiment utilizes the heat dissipation channel of the packaged device itself and other components to form a three-dimensional heat dissipation topology network, which can reduce the number of heat transfer blocks (as shown in the first embodiment) in the three-dimensional heat dissipation topology network, and can improve the first
  • the area utilization of the circuit board 10 is beneficial to the miniaturized design of the electronic device 100 .
  • FIG. 22 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the fourteenth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the thirteenth embodiment above, and the difference from the thirteenth embodiment above
  • the packaged device further includes an auxiliary heat dissipation layer 170a, and the auxiliary heat dissipation layer 170a is connected between the heat dissipation column 175 and the first heat transfer layer 180a, so that the packaged device passes through the auxiliary heat dissipation layer 170a and the first heat transfer layer 180a and the middle plate 115.
  • the indirect connection enables heat transfer and electrical communication between the packaged device and the midplane 115 .
  • the auxiliary heat dissipation layer 170a covers the top surface of the heat dissipation column 175 and the top surface of the packaging layer 176 .
  • the heat dissipation pins 173 of the packaged device, the heat dissipation member 179 and the heat dissipation layer 178 of the carrier board 172 , the heat dissipation column 175 and the auxiliary heat dissipation layer 170a form a heat dissipation channel of the packaged device.
  • FIG. 23 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the fifteenth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is substantially the same as the structure between the components of the electronic device 100 shown in the above-mentioned first embodiment, and the difference from the above-mentioned first embodiment is that:
  • the first circuit board 10 includes a substrate 11 , two thermally conductive layers 12 , a first thermally conductive structure 13 and an auxiliary thermally conductive layer 16 .
  • the two thermally conductive layers 12 and the first thermally conductive structure 13 are both embedded in the substrate 11 , and the two thermally conductive layers 12 are spaced apart from each other.
  • the auxiliary heat conducting layer 16 is fixed on the top surface 14 of the substrate 11 .
  • the first thermally conductive structure 13 includes a plurality of thermally conductive components, some of the thermally conductive components of the first thermally conductive structure 13 are connected between the two thermally conductive layers 12 , and some of the thermally conductive components of the first thermally conductive structure 13 are connected between the thermally conductive layer 13 and the auxiliary thermally conductive layer 16 . .
  • the two thermally conductive layers 12 are a first thermally conductive layer 12a and a second thermally conductive layer 12b, respectively.
  • the first thermally conductive layer 12 a is located between the top surface 14 and the bottom surface 15 of the substrate 11 .
  • the second thermally conductive layer 12b is located on the bottom side of the first thermally conductive layer 12a, is disposed parallel to and spaced from the first thermally conductive layer 12a, and is exposed relative to the bottom surface 15 of the substrate 11 .
  • the first thermal conductive layer 12a and the second thermal conductive layer 12b are both ground layers.
  • the first thermal conductive layer 12a and the second thermal conductive layer 12b can be made of metal materials such as metal copper, silver, aluminum, magnesium or tin, so as to ensure that the first thermal conductive layer 12a and the second thermal conductive layer 12b have higher thermal conductivity Conductivity.
  • the auxiliary thermally conductive layer 16 covers the top surface of the substrate 11 and is arranged parallel to and spaced from the first thermally conductive layer 11 .
  • the auxiliary heat conduction layer 16 is a ground layer.
  • the auxiliary heat conduction layer 16 can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the auxiliary heat conduction layer 16 has a high thermal conductivity.
  • the plurality of thermally conductive members of the first thermally conductive structure 13 are respectively a first thermally conductive member 13a and a second thermally conductive member 13b, the first thermally conductive member 13a is connected between the first thermally conductive layer 12a and the second thermally conductive layer 12b, and the second thermally conductive member 13b It is connected between the first thermal conductive layer 12 a and the auxiliary thermal conductive layer 16 to realize the pairwise connection between the first thermal conductive layer 12 a , the second thermal conductive layer 12 b and the auxiliary thermal conductive layer 16 .
  • part of the thermally conductive members of the first thermally conductive structure 13 may also be connected between the second thermally conductive layer 12b and the auxiliary thermally conductive layer 16 .
  • first heat conducting members 13a and second heat conducting members 13b there are multiple first heat conducting members 13a and second heat conducting members 13b.
  • the plurality of first heat-conducting members 13a are spaced apart from each other to increase the heat transfer path between the first heat-conducting layer 12a and the second heat-conducting layer 12b and speed up the heat-transfer speed between the first heat-conducting layer 12a and the second heat-conducting layer 12b .
  • the plurality of second heat-conducting members 13b are spaced apart from each other to increase the heat transfer path between the first heat-conducting layer 12a and the auxiliary heat-conducting layer 16 and speed up the heat-transfer speed between the first heat-conducting layer 12a and the auxiliary heat-conducting layer 16 .
  • the substrate 11 is provided with a plurality of first communication holes (not shown) and a plurality of second communication holes (not shown).
  • the first communication hole communicates with the first heat conduction layer 12 a and the third heat conduction layer 12 b
  • the second communication hole communicates with the first heat conduction layer 12 a and the auxiliary heat conduction layer 16 .
  • each first heat-conducting member 13a is located in a first communication hole
  • each second heat-conducting member 13b is located in a second communication hole.
  • the first heat-conducting member 13a and the second heat-conducting member 13b can be made of metal materials such as copper, silver, aluminum, magnesium or tin, so as to ensure that the first heat-conducting member 13a and the second heat-conducting member 13b have high thermal conductivity , to improve the heat transfer efficiency between the first heat conducting layer 12a, the second heat conducting layer 12b and the auxiliary heat conducting layer 16.
  • the first heat-conducting member 13a and the second heat-conducting member 13b may be metal pillars formed by filling the corresponding communication holes with a metal material, or the first heat-conducting member 13a and the second heat-conducting member 13b may be part of a metal material.
  • the auxiliary heat conduction layer 16 of the first circuit board 10 is fixed to the middle plate 115 to realize heat transfer and electrical communication between the middle plate 115 and the first heat conduction layer 12a.
  • the first circuit board 10 and the middle board 115 may be fixed to each other by fixing members such as screws or bolts.
  • the heat generated by the main heating device 30 can be firstly transferred to the fourth thermal conductive layer 22b through the heat dissipation pins 31, then transferred to the thermal conductive component 40 through the second thermal conductive structure 23 and the third thermal conductive layer 22a of the second circuit board 22b, and then passed through the third thermal conductive layer 22b.
  • the two thermally conductive layers 12b and the first thermally conductive member 13a are transferred to the first thermally conductive layer 12a, and then transferred to the middle plate 115 through the second thermally conductive member 13b and the auxiliary thermally conductive layer 16 of the first circuit board 10 to realize heat dissipation to the main heating device 30 .
  • the two thermally conductive layers 22 and the first thermally conductive structure 23 of the second circuit board 20 , the thermally conductive component 40 , the two thermally conductive layers 12 of the first circuit board 10 , the first thermally conductive structure 13 and the auxiliary thermally conductive layer 16 and the middle plate 115 forms a three-dimensional heat dissipation topology network.
  • the heat generated by the main heating device 30 during operation can be transferred to the three-dimensional heat dissipation topology network through the heat dissipation pins 31.
  • the three-dimensional heat dissipation topology network can disperse the heat inside the electronic device 100, which can not only reduce the main heat generation.
  • the junction temperature of the device 30 can improve the working efficiency and service life of the main heating device 30 , and can also prevent the main heating device 30 from forming local hot spots on the housing 110 of the electronic device 100 , and prevent the heat of the main heating device 30 from being applied to the electronic device 100 . limits.
  • the auxiliary heat conduction layer 16 of the first circuit board 10 is used to transfer heat to the middle plate 115 , and the heat transfer member 170 (as shown in FIG. 6 ) shown in the above embodiment is not required, which helps to reduce the three-dimensional heat dissipation topology
  • the thermal resistance of the network improves the heat dissipation efficiency of the main heating device 30 .
  • FIG. 24 is a schematic partial cross-sectional structural diagram of the structure shown in FIG. 5 cut along the I-I direction under the sixteenth embodiment.
  • the heat dissipation device 160 includes a first circuit board 10 , a second circuit board 20 , a main heating device 30 and a heat conducting component 40 .
  • the second circuit board 20 is located on the bottom side of the first circuit board 10 and is spaced apart from the first circuit board 10 .
  • the main heating element 30 is mounted on the second circuit board 20 and is electrically connected to the second circuit board 20 .
  • the thermally conductive component 40 is connected between the first circuit board 10 and the second circuit board 20 .
  • the structure between the components of the electronic device 100 shown in this embodiment is basically the same as the structure between the components of the electronic device 100 shown in the fourteenth embodiment above, and the difference from the fourteenth embodiment above
  • the electronic device 100 further includes an auxiliary heat transfer layer 190 , and the auxiliary heat transfer layer 190 is connected between the middle board 115 and the auxiliary heat conduction layer 16 of the first circuit board 10 . That is, the middle plate 115 is connected to the auxiliary heat conduction layer 16 of the first circuit board 10 through the auxiliary heat conduction layer 190 .
  • the auxiliary heat transfer layer 190 is a solder layer. Specifically, the auxiliary heat conduction layer 16 of the first circuit board 10 is welded to the middle plate 115 by welding. At this time, heat transfer and electrical communication can be achieved between the first circuit board 10 and the middle board 115 through the solder layer.
  • the auxiliary heat transfer layer 190 is a thermal interface material layer.
  • a thermal interface material may be added between the auxiliary heat transfer layer 16 of the first circuit board 10 and the middle board 115 by means of mounting, dispensing or coating to form the auxiliary heat transfer layer 190 .
  • the auxiliary heat conduction layer 16 of the first circuit board 10 is indirectly connected to the middle plate 115 through the thermal interface material, so as to realize heat transfer with the middle plate 115 .
  • the thermal interface material is located between the first thermally conductive layer 12a and the middle board 115 , and can fill the air gap and tolerance redundancy between the auxiliary thermally conductive layer 16 of the first circuit board 10 and the middle board 115 , thereby reducing the auxiliary thermal conductivity of the first circuit board 10 .
  • the interface thermal resistance between the thermally conductive layer 16 and the middle plate 115 improves the heat transfer efficiency between the auxiliary thermally conductive layer 16 of the first circuit board 10 and the middle plate 115 .
  • the auxiliary heat transfer layer 190 is a thermally conductive adhesive layer.
  • the auxiliary heat conducting layer 16 of the first circuit board 10 is connected to the middle board 115 by means of bonding. At this time, heat transfer and electrical communication can be achieved between the auxiliary thermally conductive layer 16 of the first circuit board 10 and the middle board 115 through the thermally conductive adhesive layer.
  • the middle plate 115 forms a three-dimensional heat dissipation topology network.
  • the heat generated by the main heating device 30 during operation can be transferred to the three-dimensional heat dissipation topology network through the heat dissipation pins 31.
  • the three-dimensional heat dissipation topology network can disperse the heat inside the electronic device 100, which can not only reduce
  • the junction temperature of the main heating element 30 can improve the working efficiency and service life of the main heating element 30, and can also prevent the main heating element 30 from forming a local hot spot on the housing 110 of the electronic device 100, and prevent the heat of the main heating element 30 from affecting the electronic equipment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Human Computer Interaction (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本申请实施例提供一种散热装置和电子设备，散热装置与散热器连接。散热装置包括第一电路板、第二电路板、支撑柱、主发热器件和导热组件。第二电路板位于第一电路板的一侧，且与第一电路板彼此间隔设置。支撑柱连接于第一电路板和第二电路板之间，以在第一电路板和第二电路板之间形成空气层。主发热器件安装于第二电路板。导热组件连接于第一电路板的第二导热层与第二电路板的第三导热层之间。本申请所示散热装置的热流密度较低，散热效率较高，具有较好的工作可靠性。

Description

散热装置和电子设备
本申请要求于2020年11月30日提交中国专利局、申请号为202011373611.2、申请名称为“散热装置和电子设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及电路板技术领域，特别涉及一种散热装置和电子设备。
背景技术
随着电子通信技术的快速发展，功能多元化是电子设备发展的必然趋势。目前，电子设备可以设置散热装置，散热装置包括多个堆叠设置的电路板，使得多种功能器件能够安装于不同的电路板，以提高器件集成度。然而，功能器件越多，导致散热装置的热流密度较大，使得散热装置难以满足散热要求，可靠性较低。
发明内容
本申请提供一种散热装置和电子设备，散热装置的热流密度较低，散热效率较高，具有较好的工作可靠性。
第一方面，本申请提供一种散热装置，包括第一电路板、第二电路板、支撑柱、主发热器件和导热组件。
第一电路板包括彼此间隔的第一导热层、第二导热层以及连接于第一导热层和第二导热层之间的导热结构，第一导热层用于与散热器连接。
第二电路板位于第一电路板的一侧，且与第一电路板彼此间隔设置。第二电路板包括彼此间隔的第三导热层、第四导热层以及连接于第三导热层和第四导热层之间的导热结构。
支撑柱连接于第一电路板和第二电路板之间，以在第一电路板和第二电路板之间形成空气层。
主发热器件安装于第二电路板，主发热器件的散热管脚与第四导热层连接。
导热组件连接于第二电路板的第一导热层与第二导热层之间。
本申请所示散热装置中，主发热器件工作时产生的热量可通过散热管脚先传递至第四导热层，经第二导热结构和第三导热层传递至导热组件，经导热组件传递至第二导热层，并经第一电路板的第一导热结构和第一导热层传递至散热器，实现对主发热器件的散热。
第二电路板的第四导热层、第二导热结构和第三导热层、导热组件、第二导热层、第一导热结构和第一导热层以及散热器形成了三维散热拓扑网络，三维散热拓扑网络可通过散热管脚接收主发热器件工作时产生的热量，实现对主发热器件的散热，可以降低主发热器件的结温，有效解决主发热器件的散热问题，提高主发热器件的工作效率和使用寿命，以使散热装置的热量密度较小，散热效率较高，具有较好的工作可靠性。
一种实施方式中，第一导热层和第二导热层沿第一电路板的厚度方向上间隔排布，第二导热层位于第一电路板靠近第二电路板的一侧。
第三导热层和第四导热层沿第二电路板的厚度方向上间隔排布，第四导热层位于第二电路板背离第一电路板的一侧。
主发热器件安装于第二电路板背离第一电路板的一侧，导热组件位于空气层内。
本申请所示散热装置中，主发热器件与散热器之间相隔有第一电路板和第二电路板，主发热器件工作时产生的热量可经三维散热拓扑网络进行有效的热扩散，可以降低主发热器件的结温，解决主发热器件的散热问题，提高主发热器件的工作效率和使用寿命。
一种实施方式中，沿第二电路板的厚度方向上，主发热器件与第二导热结构至少部分重叠，以缩短主发热器件的热量经第四导热层和第二导热结构传递至第三导热层的散热路径，有助于提高主发热器件的散热效率。
一种实施方式中，散热装置包括焊料层，焊料层电连接于主发热器件的散热管脚与第四导热层之间。
另一种实施方式中，散热装置包括焊料层和导线，焊料层连接于主发热器件的散热管脚与第二电路板的导热层之间，导线电连接于主发热器件与第四导热层之间。
一种实施方式中，主发热器件在第一电路板上的正投影位于第一电路板内。即，沿第一电路板的厚度方向上，主发热器件与第一电路板重叠。
一种实施方式中，沿第二电路板的厚度方向上，导热组件与第二导热结构至少部分重叠，以缩短主发热器件的热量经第四导热层、第二导热结构和第三导热层传递至导热组件的散热路径，有助于提高主发热器件的散热效率。
一种实施方式中，沿第一电路板的厚度方向上，导热组件与第一电路板的导热结构至少部分重叠，以缩短主发热器件的热量经导热组件、第二导热层、第一导热结构传递至第一导热层的散热路径，有助于提高主发热器件的散热效率。
一种实施方式中，导热组件包括两个导热块和热界面材料层，一个导热块连接于第二导热层，另一个导热块连接于第三导热层，热界面材料层连接于两个导热块之间。
热界面材料可填充两个导热块之间的空气间隙和公差冗余，降低两个导热块之间的界面热阻，提高两个导热块之间的热传递效率。
一种实施方式中，导热组件包括导热柱，导热柱连接于第二导热层与第三导热层之间。
一种实施方式中，散热装置还包括第一元器件，第一元器件安装于第一电路板或第二电路板；
导热柱和支撑柱均采用金属材料制成，且均处于接地状态；
导热柱有一个，一个导热柱和支撑柱分别位于第一元器件的两侧；
或者，导热柱有多个，多个导热柱和支撑柱彼此间隔环绕第一元器件设置，或者，多个导热柱和支撑柱彼此固接围合形成金属框架，第一元器件位于金属框架的内侧。
导热柱和支撑柱可形成第一元器件的电磁屏蔽结构，具有一定的电磁屏蔽作用，可防止外部器件对第一元器件的电磁干扰，或者，避免第一元器件对其他器件造成电磁干扰。
一种实施方式中，第一元器件包括天线模块、前端模块、调制解调器、信号收发器、内存、闪存、连接器、功能传感器、电阻、电容、电感或晶振中的一种或多种。
一种实施方式中，导热组件包括封装器件，导热组件的封装器件设有散热通道，导热组件的封装器件的散热通道连接于第二导热层和第三导热层之间。
本申请所示散热装置中，利用第二电路板的第四导热层、第二导热结构和第三导热层、导热组件的封装器件的散热通道、第二导热层、第一导热结构和第一导热层以及散热器共同形成三维散热拓扑网络，有助于提高散热装置的集成度。
一种实施方式中，导热组件的封装器件包括：
承载板，承载板的内部设有散热件；
散热管脚，位于承载板的一侧，且与承载板的散热件连接；
散热柱，位于承载板的另一侧，且与承载板的散热件连接；
及封装层，覆盖承载板和散热柱，散热柱相对于封装层露出；
散热管脚、承载板的散热件和散热柱形成导热组件的封装器件的散热通道。
一种实施方式中，导热组件的封装器件包括：
承载板，承载板的内部设有散热件；
散热管脚，位于承载板的一侧，且与承载板的散热件连接；
散热柱，位于承载板的另一侧，且与承载板的散热件连接；
封装层，覆盖承载板和散热柱，散热柱相对于封装层露出；
及辅助散热层，覆盖散热柱和封装层；
散热管脚、承载板的散热件、散热柱和辅助散热层形成导热组件的封装器件的散热通道。
一种实施方式中，导热组件还包括导热块；
导热块为一个，导热块连接于导热组件的封装器件的散热通道与第二导热层之间，或者，导热块连接于导热组件的封装器件的散热通道与第三导热层之间；
导热块有两个，一个导热块连接于导热组件的封装器件的散热通道与第二导热层之间，另一导热块连接于导热组件的封装器件的散热通道与第三导热层之间。
一种实施方式中，导热组件还包括热界面材料层，热界面材料层连接于导热块与导热组件的封装器件的散热通道之间。
热界面材料可填充导热块和导热组件的封装器件的散热通道之间的空气间隙和公差冗余，降低两者之间的界面热阻，提高两者之间的热传递效率。
一种实施方式中，电路板堆叠结构还包括连接层，连接层采用焊料制成，或者，连接层采用热界面材料制成，或者，连接层采用导热胶制成。
连接层有一层，连接层连接于导热组件与第二导热层之间，或，连接层连接于导热组件与第三导热层之间；
或者，连接层有两层，一层连接层连接于导热组件与第二导热层之间，另一层连接层连接于导热组件与第三导热层之间。
一种实施方式中，第一电路板的导热结构包括芯片，第一导热结构的芯片设有散热通道，第一导热结构的芯片的散热通道连接于第一电路板的第一导热层和第二导热层之间。
本申请所示散热装置中，利用第二电路板的第四导热层、第二导热结构和第三导热层、导热组件、第一电路板的第二导热层、第一导热结构的芯片的散热通道和第一导热层以及散热器共同形成三维散热拓扑网络，有助于提高第一电路板的面积利用率收益，提高散热装置的集成度。
一种实施方式中，第一电路板的芯片包括：
晶圆层；
表面导热层，表面导热层位于晶圆层的一侧，且与晶圆层连接；
焊脚，焊脚位于晶圆层的另一侧，且与晶圆层连接；
及封装层，封装层覆盖晶圆层、表面导热层和焊脚，表面导热层和焊脚相对于封装层露出；
表面导热层、晶圆层和焊脚形成第一电路板的芯片的散热通道。
其中，晶圆层采用硅、氮化镓或碳化硅等半导体材料制成，半导体材料具有良好的导热性能，有助于散热装置中高导热材料的高密度集成，有效降低三维散热拓扑网络的热阻。
一种实施方式中，第二导热结构包括芯片，第二电路板的芯片设有散热通道，第二电路板的芯片的散热通道连接于第三导热层和第二导热层之间。
本申请所示散热装置中，利用第二电路板的第四导热层、第二导热结构的芯片的散热通道和第三导热层、导热组件、第一电路板的第二导热层、第一导热结构和第一导热层以及散热器共同形成三维散热拓扑网络，有助于提高第二电路板的面积利用率收益，提高散热装置的集成度。
一种实施方式中，第二电路板的芯片包括：
晶圆层；
表面导热层，表面导热层位于晶圆层的一侧，且与晶圆层连接；
焊脚，焊脚位于晶圆层的另一侧，且与晶圆层连接；
及封装层，封装层覆盖晶圆层、表面导热层和焊脚，表面导热层和焊脚相对于封装层露出；
表面导热层、晶圆层和焊脚形成第二路板的芯片的散热通道。
其中，晶圆层采用硅、氮化镓或碳化硅等半导体材料制成，半导体材料具有良好的导热性能，有助于散热装置中高导热材料的高密度集成，有效降低三维散热拓扑网络的热阻。
一种实施方式中，主发热器件为多媒体应用处理器件、系统级芯片、中央处理器、电源管理器件或射频放大器件。
一种实施方式中，散热装置还包括柔性电路板，柔性电路板电连接于第一电路板与第二电路板之间，以实现第一电路板和第二电路板之间的通讯连接。
第二方面，本申请提供一种电子设备，包括散热器和上述任一种散热装置，散热器与第一电路板的第一导热层连接。
一种实施方式中，电子设备还包括传热件，传热件连接于散热器与第一电路板的第一导热层之间，以实现散热器与第一导热层之间的热量传递。
一种实施方式中，沿第一电路板的厚度方向上，传热件与第一导热结构至少部分重叠，以缩短热量经第二导热层、第一导热结构和第一导热层传递至传热件的散热路径，提高朱发热器件的散热效率。
一种实施方式中，传热件包括传热块，传热块连接于第一导热层与散热器之间。
一种实施方式中，传热件包括封装器件，传热件的封装器件设有散热通道，传热件的封装器件的散热通道连接于散热器和第一导热层之间。
本申请所示电子设备中，利用第二电路板的第四导热层、第二导热结构和第三导热层、导热组件、第二导热层、第一导热结构和第一导热层、传热件的封装器件的散热通道以及散热器共同形成三维散热拓扑网络，有助于提高电子设备的集成度。
一种实施方式中，传热件的封装器件包括：
承载板，承载板的内部设有散热件；
散热管脚，位于承载板的一侧，且与承载板的散热件连接；
散热柱，位于承载板的另一侧，且与承载板的散热件连接；
及封装层，覆盖承载板和散热柱，散热柱相对于封装层露出；
散热管脚、承载板的散热件和散热柱形成传热件的封装器件的散热通道。
一种实施方式中，传热件的封装器件包括：
承载板，承载板的内部设有散热件；
散热管脚，位于承载板的一侧，且与承载板的散热件连接；
散热柱，位于承载板的另一侧，且与承载板的散热件连接；
封装层，覆盖承载板和散热柱，散热柱相对于封装层露出；
及辅助散热层，覆盖散热柱和封装层；
散热管脚、承载板的散热件、散热柱和辅助散热层形成传热件的封装器件的散热通道。
一种实施方式中，电路板堆叠结构还包括传热层，传热层采用焊料制成，或者，传热层采用热界面材料制成，或者，传热层采用导热胶制成；
传热层有一层，传热层连接于传热件与第一电路板的第一导热层之间，或，传热层连接于传热件与散热器之间；
或者，传热层有两层，一层传热层连接于传热件与第一电路板的第一导热层之间，另一层传热层连接于传热件与散热器之间。
一种实施方式中，电子设备还包括辅助传热层，辅助传热层采用热界面材料制成，辅助传热层连接于散热器与第一导热层之间。
热界面材料可填充散热器与第一导热层之间的空气间隙和公差冗余，降低两者之间的界面热阻，提高两者之间的热传递效率。
一种实施方式中，散热器为中框、石墨膜、石墨烯膜、导热金属膜、热管散热器、蒸汽均温板散热器或风扇。
附图说明
为了更清楚地说明本申请实施例或背景技术中的技术方案，下面将对本申请实施例或背景技术中所需要使用的附图进行说明。
图1是本申请实施例提供的一种电子设备的结构示意图；
图2是图1所示电子设备的部分分解结构示意图；
图3是图2所示电子设备中壳体的中框的结构示意图；
图4是图3所示中框在另一个角度下的结构示意图；
图5是图2所示电子设备中壳体的中框、电池、扬声器模组、摄像模组和散热装置的组装结构示意图；
图6是图5所示结构在一种实施例下沿I-I方向剖开的局部剖面结构示意图；
图7是图5所示结构在另一种实施例下沿I-I方向剖开的局部剖面结构示意图；
图8是图5所示结构在第三种实施例下沿I-I方向剖开的局部剖面结构示意图；
图9是图5所示结构在第四种实施例下沿I-I方向剖开的局部剖面结构示意图；
图10是图5所示结构在第五种实施例下沿I-I方向剖开的局部剖面结构示意图；
图11是图5所示结构在第六种实施例下沿I-I方向剖开的局部剖面结构示意图；
图12是图5所示结构在第七种实施例下沿I-I方向剖开的局部剖面结构示意图；
图13是图5所示结构在第八种实施例下沿I-I方向剖开的局部剖面结构示意图；
图14是图5所示结构在第九种实施例下沿I-I方向剖开的局部剖面结构示意图；
图15是图5所示结构在第十种实施例下沿I-I方向剖开的局部剖面结构示意图；
图16是图5所示结构在第十一种实施例下沿I-I方向剖开的局部剖面结构示意图；
图17是图5所示结构在第十二种实施例下沿I-I方向剖开的局部剖面结构示意图；
图18是图17所示结构中导热组件和第一元器件在一种实施方式下在第一电路板的底面上的正投影的部分结构示意图；
图19是图17所示结构中导热组件和第一元器件在另一种实施方式下在第一电路板的底 面上的正投影的部分结构示意图；
图20是图17所示结构中导热组件和第一元器件在第三种实施方式下在第一电路板的底面上的正投影的部分结构示意图；
图21是图5所示结构在第十三种实施例下沿I-I方向剖开的局部剖面结构示意图；
图22是图5所示结构在第十四种实施例下沿I-I方向剖开的局部剖面结构示意图；
图23是图5所示结构在第十五种实施例下沿I-I方向剖开的局部剖面结构示意图；
图24是图5所示结构在第十六种实施例下沿I-I方向剖开的局部剖面结构示意图。
具体实施方式
下面结合本申请实施例中的附图对本申请实施例进行描述。
请参阅图1和图2，图1是本申请实施例提供的一种电子设备100的结构示意图，图2是图1所示电子设备100的部分分解结构示意图。其中，为方便后文说明，图1中将电子设备100的宽度方向定义为X轴方向，电子设备100的长度方向定义为Y轴方向，电子设备100的高度方向定义为Z轴方向，电子设备100的高度方向(即Z轴方向)垂直于电子设备100的宽度方向(即X轴方向)和长度方向(即Y轴方向)。
电子设备100可以是手机、平板电脑、车机、多媒体播放器、电子书阅读器、笔记本电脑、销售点终端(point of sales terminal，简称为POS机)车载设备或可穿戴设备等电子产品。其中，可穿戴设备可以是智能手环、智能手表、增强现实(augmented reality，AR)眼镜、虚拟现实技术(virtual reality，VR)眼镜等。图1所示实施例以电子设备100是手机为例进行说明。
电子设备100包括壳体110、屏幕120、电池130、扬声器模组140、摄像模组150和散热装置160。壳体110设有出声孔111。屏幕120安装于壳体110，且与壳体110围合形成整机内腔(图未示)。整机内腔与出声孔111连通。电池130、扬声器模组140、摄像模组150和散热装置160均安装于整机内腔。电池130能够为屏幕120、扬声器模组140、摄像模组150和散热装置160供电。扬声器模组140能够振动发声，声音经出声孔111扩散至外界环境中，实现电子设备100的发声。摄像模组150能够采集电子设备100外部的光线，并形成对应的图像数据。应当理解的是，本申请实施例中某一部件或模组安装于整机内腔，并不意味着该部件或模组必须全部位于整体内腔，该部件或模组部分或全部位于整机内腔均可。
壳体110包括中框112和后盖113。出声孔111设于中框112。本实施例中，后盖113设有避让孔114，避让孔114沿后盖113的厚度方向贯穿后盖113。具体的，后盖113固接于中框112的一侧。其中，后盖113可采用可拆卸的方式安装于中框112，以便于电子设备100内部电池130等器件或模组的维修和更换。此时，中框112可由钛合金或铝镁合金等金属合金材料制成，后盖113可由聚碳酸酯(polycarbonate，PC)、丙烯腈-丁二烯-苯乙烯共聚物(acrylonitrile butadiene styrene copolymers，ABS)等工程塑料、玻璃或陶瓷等或者钛合金、铝镁合金等金属合金制成。在其他一些实施例中，后盖113和中框112可以一体成型，以提高电子设备100的结构稳定性。此时，中框112和后盖113可由一种金属材料或多种金属材料组合制成。
请参阅图3和图4，图3是图2所示电子设备100中壳体110的中框112的结构示意图，图4是图3所示中框112在另一个角度下的结构示意图。
中框112包括中板115、边框116和隔板117。出声孔111设于边框116。本实施例中，中板115设有避让孔118，避让孔118沿中板115的厚度方向贯穿中板115。边框116固接于 中板115的周缘，且与中板115围合形成收容空间119。收容空间119与避让孔118连通。隔板117位于边框116的内侧，且固接于边框116，将收容空间119划分为第一收容空间1191和第二收容空间1192。其中，第一收容空间1191与出声孔111连通，第二收容空间1192与避让孔118连通。
复参图1，屏幕120固接于中框112的另一侧，即屏幕120安装于中框112背离后盖113的一侧，也即屏幕120和后盖113安装于中框112的相对两侧。此时，后盖113指向屏幕120的方向为图示Z轴方向。用户使用电子设备100时，屏幕120朝向用户放置，后盖113背离用户放置。具体的，屏幕120包括相对设置的显示面(图未标)和非显示面(图未标)。显示面为屏幕120背离中框112的表面，用以显示画面。其中，屏幕120可包括盖板和固定于盖板上的显示屏。盖板可以采用玻璃等透明材料制成。显示屏可以是液晶显示屏(liquid crystal display，LCD)或有机发光二极管显示屏(organic light-emitting diode，OLED)。
请参阅图1和图5，图5是图2所示电子设备100中壳体110的中框112、电池130、扬声器模组140、摄像模组150和散热装置160的组装结构示意图。
电池130和扬声器模组140安装于第一收容空间1191，摄像模组150和散热装置160安装于第二收容空间1192。具体的，摄像模组150相对于壳体110露出。本实施例中，摄像模组150为电子设备100的后置摄像模组150。其中，摄像模组150穿过中板115的避让孔118(如图4所示)和后盖113的避让孔114(如图2所示)，且相对于后盖113露出。此时，部分摄像模组150收容于第二收容空间1192，部分摄像模组150相对于后盖113凸出。需要说明的是，摄像模组150相对后盖113露出是指，后盖113不完全遮盖摄像模组150。在其他一些实施例中，摄像模组150也可以与后盖113平齐，或者，摄像模组150也可以不穿过后盖113的避让孔114，而完全收容于第二收容空间1192。
请参阅图5和图6，图6是图5所示结构在一种实施例下沿I-I方向剖开的局部剖面结构示意图。其中，沿“I-I方向剖开”是指沿I-I线所在的平面剖开，后文中对附图的相同或类似说明可做相同理解。
散热装置160固接于中框112。其中，散热装置160固接于中板115。散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20。导热组件40连接于第一电路板10和第二电路板20之间。
应当理解的是，本申请实施例描述散热装置160时所采用“顶”“底”等方位用词主要依据附图6中的展示方位进行阐述，以朝向Z轴正方向为“顶”，以朝向Z轴负方向为“底”，并不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对散热装置160于实际应用场景中的方位的限定。
本实施例中，第一电路板10包括基板11、两层导热层12和第一导热结构13。基板11包括相背设置的顶面14和底面15。两层导热层12和第一导热结构13均嵌设于基板11。两层导热层12彼此间隔设置，第一导热结构13连接于两层导热层12之间。应当理解的是，本申请实施例描述散热装置160所提及的“连接”包括“直接连接”和“间接连接”两种情况，后文中相关描述可做相同理解。
具体的，两层导热层12分别为第一导热层12a和第二导热层12b，第一导热层12a和第二导热层12b沿第一电路板10的厚度方向间隔排布。第一导热层12a相对于基板11的顶面14露出。其中，第一导热层12a的顶面(图未标)与基板11的顶面14平齐。应当理解的是，第一导热层12a相对基板11的顶面14露出是指，基板11不完全覆盖第一导热层12a。在其 他一些实施例中，第一导热层12a的顶面可相对于基板11的顶面14凸出，或者，第一导热层12a的顶面可相对于基板11的顶面14凹陷。
第二导热层12b位于第一电路板10朝向第二电路板20的一侧。具体的，第二导热层12b位于第一导热层12a的底侧，与第一导热层12a平行且间隔设置，并相对于基板11的底面15露出。其中，第二导热层12b的底面(图未标)与基板11的底面15平齐。应当理解的是，第二导热层12b相对基板11的底面15露出是指，基板11不完全覆盖第二导热层12b。在其他一些实施例中，第二导热层12b的底面可相对于基板11的底面15凸出，或者，第二导热层12b的底面可相对于基板11的底面15凹陷。
本实施例中，第一导热层12a和第二导热层12b均为接地层。其中，第一导热层12a和第二导热层12b可采用铜、银、铝、镁或锡等金属材料制成，以保证第一导热层12a和第二导热层12b具有较高的热导率。
第一导热结构13连接于第一导热层12a和第二导热层12b之间，以实现第一导热层12a与第二导热层12b之间的热量传递和电连接。其中，第一导热结构13包括多个导热件，多个导热件13彼此间隔排布，以增加第一导热层12a与第二导热层12b之间的热量传递路径，加快第一导热层12a与第二导热层12b之间的热量传递速度。
一些实施例中，基板11设有连通第一导热层12a和第二导热层12b的连通孔(图未标)。其中，连通孔为过孔或埋孔。导热件位于连通孔，以连接第一导热层12a和第二导热层12b。其中，导热件可采用铜、银、铝、镁或锡等金属材料制成，以保证第一导热结构13具有较高的热导率，提高第一导热层12a和第二导热层12b之间的热量传递效率。此时，导热件可为采用金属材料填充于连通孔以形成的金属柱，或者，导热件可为采用金属材料部分覆盖或完全覆盖连通孔的孔壁以形成的金属层。
在其他一些实施例中，第一电路板10也可以包括三层或三层以上的导热层12和第一导热结构13，第一导热结构13包括多个导热件，每一导热件均连接于两层导热层12之间，以实现多层导热层12之间的热量传递和电气连通，保证热量在第一电路板10内部的均匀扩散。
本实施例中，第二电路板20与第一电路板10相对设置。应当理解的是，第二电路板20与第一电路板10相对设置是指，沿Z轴方向上，第二电路板20与第一电路板10至少部分重叠。换言之，第二电路板20在第一电路板10的底面15所在平面的正投影至少部分位于第一电路板10的底面15内，或者，第一电路板10在第二电路板20的顶面14所在平面的正投影至少部分位于第二电路板20的顶面14内。在其他一些实施例中，第二电路板20与第一电路板10也可以不相对设置，即沿Z轴方向上，第二电路板20与第一电路板10完全错开，不存在重叠部分。
其中，第二电路板20与第一电路板10正对设置。第二电路板20包括基板21、两层导热层22和第二导热结构23。基板21包括相背设置的顶面24和底面25。两层导热层22和第二导热结构23均嵌设于基板21。两层导热层22彼此间隔设置，第二导热结构23连接于两层导热层22之间。具体的，两层导热层22分别为第三导热层22a和第四导热层22b，第三导热层22a和第四导热层22b沿第二电路板20的厚度方向彼此间隔。第三导热层22a相对于基板21的顶面24露出。其中，第三导热层22a的顶面(图未标)与基板21的顶面24平齐。应当理解的是，第三导热层22a相对基板21的顶面24露出是指，基板22不完全覆盖第三导热层22a。在其他一些实施例中，第三导热层22a的顶面可相对于基板21的顶面24凸出，或者，第三导热层22a的顶面可相对于基板21的顶面24凹陷。
第四导热层22b位于第二电路板20背离第一电路板10的一侧。具体的，第四导热层22b 位于第三导热层22a的底侧，与第三导热层22a平行且间隔设置，并位于基板21的底面25与顶面24之间。本实施例中，第三导热层22a和第四导热层22b均为接地层。其中，第三导热层22a和第四导热层22b可采用铜、银、铝、镁或锡等金属材料制成，以保证第三导热层22a和第四导热层22b具有较高的热导率。
第二导热结构23连接于第三导热层22a和第四导热层22b之间，以实现第三导热层22a和第四导热层22b之间的热量传递和电连接。其中，第二导热结构23包括多个导热件，多个导热件彼此间隔排布，以增加第三导热层22a与第四导热层22b之间的散热路径，加快第三导热层22a与第四导热层22b之间的热量传递速度。
一些实施例中，基板21设有连通第三导热层22a和第四导热层22b的连通孔(图未标)。其中，连通孔为过孔或埋孔。第二导热结构23的导热件位于连通孔，以连接第三导热层22a和第四导热层22b。其中，第二导热结构23的导热件可采用铜、银、铝、镁或锡等金属材料制成，以保证第二导热结构23具有较高的热导率，提高第三导热层22a和第四导热层22b之间的热量传递效率。此时，第二导热结构23的导热件可为采用金属材料填充于连通孔以形成的金属柱，或者，第二导热结构23的导热件可为采用金属材料部分覆盖或完全覆盖连通孔的孔壁以形成的金属层。
在其他一些实施例中，第二电路板20也可以包括三层或三层以上的导热层22和第二导热结构23，第二导热结构23包括多个导热件，第二导热结构23的每一导热件连接于两层导热层22之间，以实现多层导热层22之间的热量传递和电气连通，保证热量在第二电路板20内部的均匀扩散。
此外，散热装置160还包括支撑柱50，支撑柱50连接于第一电路板10和第二电路板20之间，以在第一电路板10和第二电路板20之间形成空气层161，便于第一电路板10和第二电路板20彼此相对的表面安装电子元器件，不仅可以增加散热装置160的功能多样性，还可以提高散热装置160的集成度。其中，支撑柱50可采用金属或高强度塑料等高强度材料制成，以保证散热装置160的结构稳定性。
示例性的，散热装置160还包括多个第一元器件60，多个第一元器件60均位于容置空间151内。其中，部分第一元器件60安装于第一电路板10，且与第一电路板10电连接，部分第一元器件60安装于第二电路板20，且与第二电路板20电连接。其中，第一元器件60可包括天线模块、前端模块、调制解调器、信号收发器、内存、闪存、连接器、功能传感器、电阻、电容、电感或晶振等功能器件中的一个或多个。
本实施例中，支撑柱50有两个，两个支撑柱50彼此间隔排布，以保证散热装置160的结构稳定性。具体的，支撑柱50连接于第一电路板10的基板11和第二电路板20的基板21之间。示例性的，支撑柱50可通过粘接的方式与第一电路板10的基板11和第二电路板20的基板21连接。此时，散热装置160包括两层粘接层51，一层粘接层51连接于第一电路板10的基板11的底面15与支撑柱50的顶面14之间，另一层粘接层51连接于支撑柱50的底面15与第二电路板20的基板21的顶面14之间。换言之，支撑柱50分别通过两个粘接层51与第一电路板10和第二电路板20间隔连接。其中，支撑柱50的高度为H。应当理解的是，高度是指沿Z轴方向的尺寸，后文中相关描述可做相同理解。
主发热器件30安装于第二电路板20背离第一电路板10的一侧，即主发热器件30安装于第二电路板20的底侧。其中，主发热器件30与第二电路板20电气连通(electrically connected)。示例性的，主发热器件30以倒装封装的形式安装于第二电路板20。在其他一些实施例中，主发热器件30也可以安装于第二电路板20朝向第一电路板10的一侧，即主发热 器件30也可安装于第二电路板20的顶侧。
其中，主发热器件30可以为多媒体应用处理器件(multimedia application processor，MAP)、系统级芯片(system on chip，SOC)、中央处理器(central processing unit，CPU)、电源管理器件(power management unit，PMU)或射频放大器件(power amplifier，PA)等高发热的元器件。主发热器件30包括散热管脚31，散热管脚31与第二电路板20的导热层22连接。具体的，散热管脚31与第四导热层22b连接，以实现主发热器件30与第二电路板20之间的热量传递和电气连通。即主发热器件30不仅可以通过散热管脚31将工作时产生的热量传递至第二电路板20，还可以通过散热管脚31实现与第二电路板20的电气连通。此时，散热管脚31兼具散热和接地两个功能，即散热管脚31可用作主发热器件30的接地管脚。
其中，散热管脚31通过焊接的方式与第四导热层22b电连接。此时，散热装置160包括焊料层32，焊料层32连接于散热管脚31和第四导热层22b之间。即散热管脚31通过焊料层32与第四导热层22b间接连接。在其他一些实施例中，散热管脚31也可以与第三导热层22a连接，或者，散热管脚31也可以与第二导热结构23连接。
本实施例中，主发热器件30在第一电路板10上的正投影位于第一电路板10内。即沿第一电路板10的厚度方向(即图示Z轴方向)上，主发热器件30与第一电路板10重叠。也即，主发热器件30在基板11的底面15(即第一电路板10的底面)上的正投影位于基板11的底面15。此外，沿Z轴方向上，主发热器件30与第二导热结构23完全错开。此时，主发热器件30与第一导热结构13在第四导热层22b上的正投影完全错开，即主发热器件30与第一导热结构13在第四导热层22b上的正投影完全不重叠。
具体的，主发热器件30和第一导热结构13分别连接于第四导热层22b的两端。主发热器件30工作时产生的热量经散热管脚31先传递至第四导热层22b的一端，传递至第四导热层22b的另一端后，再经第二导热结构23传递至第三导热层22a，有助于实现主发热器件30产生的热量在第二电路板20上的均匀扩散，提高主发热器件30的散热效率。
此外，散热装置160还可以包括多个第二元器件70，多个第二元器件70彼此间隔安装于第二电路板20的底侧，且与第二电路板20电连接，以增加散热装置160的功能多样性，提高散热装置160的集成度。其中，第二元器件70可包括天线模块、前端模块、调制解调器、信号收发器、内存、闪存、连接器、功能传感器、电阻、电容、电感或晶振等功能器件中的一个或多个。
导热组件40连接于第一电路板10的导热层12与第二电路板20的导热层22之间，以实现第一电路板10与第二电路板20之间的热量传递。其中，导热组件40位于空气层161内，且连接于第二导热层12b和第三导热层22a之间。本实施例中，沿Z轴方向上，导热组件40与第一导热结构13和第二导热结构23至少部分重叠。此时，导热组件40和第一导热结构13在第二导热层12b上的正投影至少部分重叠，导热组件40和第二导热结构23在第三导热层22a上的正投影至少部分重叠，有助于缩短主发热器件30工作时产生的热量从第四导热层22b传递至导热组件40，再从导热组件40传递至第二电路板10的第一导热层12a的散热路径，提高主发热器件30的散热效率。
此外，导热组件40还电连接于第一电路板10的导热层12和第二电路板20的导热层22之间，以实现第一电路板10的导热层12和第二电路板20的导热层22之间的电连接，进而实现第一电路板10和第二电路板20之间的电气连通。本实施例中，导热组件40包括两个导热块41和热界面材料(thermal interface material，TIM)层42，热界面材料层42连接于两个导热块41之间。一个导热块41连接于第一电路板10的导热层12，另一个导热块41连接于 第二电路板20的导热层22，即两个导热块41分别连接于第一电路板10的导热层12和第二电路板20的导热层22。示例性的，导热块41采用铜、银、率、镁或锡等金属材料制成。
具体的，两个导热块41分别为第一导热块41a和第二导热块41b，第二导热块41b位于第一导热块41a的底侧。第一导热块41a连接于第二导热层12b，且与第二导热层12b电连接，第二导热块41b连接于第三导热层22a，且与第三导热层22a电连接。其中，第一导热块41a的高度为H1，第二导热块41b的高度为H2。此时，H/2<H1+H2<H。在其他一些实施例中，第一导热块41a也可以连接于第一导热层12a，第二导热块41b也可以连接于第四导热层22b。
热界面材料层42连接于第一导热块41a和第二导热块41b之间。其中，第一导热块41a和第二导热块41b之间可采用贴装、点胶或涂覆等方式增加热界面材料以形成热界面材料层42。此时，第一导热块41a和第二导热块41b之间通过热界面材料层42间接连接，实现热量传递和电连接。热界面材料位于第一导热块41a和第二导热块41b之间，可填充第一导热块41a和第二导热块41b之间的空气间隙和公差冗余，降低第一导热块41a和第二导热块41b之间的界面热阻，提高热传递效率。其中，热界面材料层42可为含有金属粒子或碳基高导热粒子的导热垫片或导热硅脂等材料。
此外，散热装置160还包括两层连接层80。一层连接层80连接于第一电路板10的导热层12与导热组件40之间，以实现第一电路板10与导热组件40之间的热量传递和电气连通。另一层连接层80连接于第二电路板20的导热层22与导热组件40之间，以实现第二电路板20与导热组件40之间的热量传递和电气连通。换言之，导热组件40分别通过两个连接层80实现与第一电路板10的导热层12与第二电路板20的导热层22的间接连接。
在其他一些实施例中，散热装置160可以只包括一层连接层80，连接层80连接于第一电路板10的导热层12与导热组件40之间，即导热组件40通过连接层80与第一电路板10的导热层12间接连接，与第二电路板20的导热层22直接连接。或者，连接层80连接于第二电路板20的导热层22与导热组件40之间，即导热组件40通过连接层80与第二电路板20的导热层22间接连接，与第一电路板10的导热层12直接连接。
具体的，两层连接层80分别为第一连接层80a和第二连接层80b，第一连接层80a连接于第一电路板10的导热层12与导热组件40之间，第二连接层80b连接于第二电路板20的导热层22与导热组件40中间。具体的，第一连接层80a连接于第二导热层12b与第一导热块41a之间，第二连接层80b连接于第三导热层22a与第二导热块41b之间。
一种实施方式中，连接层80采用焊料制成。即连接层80为焊料层。具体的，第一导热块41a通过焊接的方式焊接于第二导热层12b，且与第二导热层12b电连接。第二导热块41b通过焊接的方式焊接于第三导热层22a，且与第三导热层22a电连接。此时，第一电路板10与第二电路板20之间可通过两层连接层80和导热组件40实现热量传递和电气连通。
另一种实施方式中，连接层80采用热界面材料制成。即连接层80为热界面材料层。示例性的，第一导热块41a和第二导热层12b之间可通过贴装、点胶或涂覆等方式增加热界面材料以形成第一连接层80a。此时，第一导热块41a通过热界面材料与第二导热层12b间接连接，实现与第二导热层12b之间的热量传递和电连接。热界面材料位于第一导热块41a和第二导热层12b之间，可填充第一导热块41a和第二导热层12b之间的空气间隙和公差冗余，降低第一导热块41a和第二导热层12b之间的界面热阻，提高第一导热块41a和第二导热层12b之间的热传递效率。
第二导热块41b和第三导热层22a之间可通过贴装、点胶或涂覆等方式增加热界面材料以形成第二连接层80b。此时，第二导热块41b通过热界面材料与第三导热层22a间接连接， 以实现与第三导热层22a之间的热量传递和电连接。热界面材料位于第二导热块41b和第三导热层22a，可填充第二导热块41b和第三导热层22a之间的空气间隙和公差冗余，降低第二导热块41b和第三导热层22a之间的界面热阻，提高第二导热块41b和第三导热层22a之间的热传导效率。
第三种实施方式中，连接层80采用导热胶制成。即连接层80为导热胶层。具体的，第一导热块41a通过粘接的方式与第二导热层12b连接，第二导热块41b通过粘接的方式与第三导热层22a连接。此时，第一电路板10与第二电路板20之间可通过两层导热胶层和导热组件40实现热量传递。此外，导热胶层还具有导电作用，第一电路板10与第二电路板20之间可通过两层导热胶层和导热组件40实现电气连通。其中，导热胶可为导热银胶，导热银胶中的导电粒子可以采用烧结银、铅锡合金或金锡合金等材料制成。
在其他一些实施方式中，两层连接层80也可以不同，比如一层连接层80采用焊料制成，另一层连接层80采用热界面材料或导热胶制成，或者，一层连接层80采用热界面材料制成，另一层连接层80采用导热胶制成。
本实施例中，第一电路板10和第二电路板20之间的空气层161中，仅有多个第一元器件60、导热组件40和两个连接层80，而不存在覆盖第一元器件60、导热组件40和连接层80的封装层，即其余介质均为空气，不仅可节省封装工艺造成的成本浪费，还可简化散热装置160的组装工艺。
此外，电子设备100还包括传热件170，传热件170连接于散热装置160和中框112之间。具体的，传热件170连接于第一电路板10和中板115之间，以在第一电路板10和中板115之间形成容置空间171，便于第一电路板10朝向中板115的表面安装电子元器件，以形成“四明治”形式的散热装置160，不仅可以增加散热装置160的功能多样性，还可以提高散热装置160的集成度。示例性的，散热装置160还可以包括多个第三元器件90，多个第三元器件90均位于容置空间171内。多个第三元器件90彼此间隔地安装于第一电路板10，且与第一电路板10电连接。其中，第三元器件90包括天线模块、前端模块、调制解调器、信号收发器、内存、闪存、连接器、功能传感器、电阻、电容、电感或晶振等功能器件中的一个或多个。
本实施例中，传热件170连接于第一电路板10的导热层12和中板115之间，以实现散热装置160与中板115之间的热量传递。换言之，散热装置160可通过传热件170将热量传递至中板115，以实现散热。此时，中框112采用金属制成，可作为散热装置160的散热器。在其他一些实施例中，中框112也可以不作为散热装置160的散热器，电子设备100还可以包括专门用于给散热装置160散热的散热器，散热器可以为石墨膜、石墨烯膜、导热金属膜、热管(heat pipe，HP)散热器、蒸汽均温板(vapor chamber，VC)散热器或风扇等部件。
其中，沿Z轴方向上，传热件170与第一导热结构13至少部分重叠。此时，传热件170和第一导热结构13在第一导热层12a上的正投影至少部分重叠，有助于缩短主发热器件30工作时产生的热量从第二导热层12b传递至中框112的散热路径，提高主发热器件30的散热效率。
本实施例中，传热件170为传热块，传热块连接于第二导热层12b和中板115之间，以实现第一电路板10与中板115之间的热量传递。其中，传热块可采用铜、银、铝、镁或锡等金属材料制成，以保证传热块的高热导率。此外，传热块还电连接于第一电路板10的导热层12与中板115之间。应当理解的是，电子设备100的中框112用于接地，第一电路板10的导热层12通过传热块与中板115电连接，实现了第一电路板10的导热层12的接地。此时， 由于第二电路板20的导热层22与第一电路板10的导热层12电连接，也实现了第二电路板20的导热层22的接地。
此外，电子设备100还包括两层传热层180，一层传热层180连接于传热件170与中板115之间，以实现传热件170与中板115之间的热量传递。另一层传热层180连接于传热件170与第一电路板10的导热层12之间，以实现传热件170与第一电路板10之间的热量传递。换言之，传热件170分别通过两个传热层180实现与中板115与第一电路板10的导热层12的间接连接。
在其他一些实施例中，电子设备100可以只包括一层传热层180，传热层180连接于传热件170与中板115之间，即传热件170通过传热层180与中板115间接连接，与第一电路板10的导热层12直接连接。或者，传热层180连接于传热件170与第一电路板10的导热层12之间，即传热件170通过传热层180与第一电路板10的导热层12间隔连接，与中板115直接连接。或者，电子设备100也可以不包括传热层180，传热件170与中板115和第一电路板10的导热层12直接连接。
具体的，两层传热层180分别为第一传热层180和第二传热层180。第一传热层180连接于传热件170与中板115之间，第二传热层180连接于传热件170与第一电路板10的导热层12之间。
本实施例中，第一传热层180采用热界面材料制成。即第一传热层180为热界面材料层。具体的，传热件170与中板115之间可通过贴装、点胶或涂覆等方式增加热界面材料以形成第一传热层180。此时，传热件170和中板115之间通过热界面材料实现热量传递和电连接。热界面材料位于传热件170与中板115之间，可填充传热件170和中板115之间的空气间隙和公差冗余，降低传热件170和中板115之间的界面热阻，提高传热件170和中板115之间的热传递效率。在其他一些实施例中，第一传热层180也可以采用焊料制成，此时传热件170通过焊接的方式焊接于中板115，或者，第一传热层180也可以采用导热胶制成，此时传热件170通过粘接的方式与中板115连接。
第二传热层180连接于传热件170与第一导热层12a之间。本实施例中，第二连接层80b采用导热胶制成。即第二连接层80b为导热胶层。具体的，传热件170通过粘接的方式与第一导热层12a连接。此时，传热件170与第一导热层12a之间通过导热胶层实现热量传递和电连接。在其他一些实施例中，第二连接层80b也可以采用热界面材料制成，此时传热件170与第一导热层12a之间可通过贴装、点胶或涂覆等方式增加热界面材料以形成第二传热层180。此时，传热件170通过热界面材料与第一导热层12a间接连接，以实现与第一导热层12a之间的热量传递和电连接。或者，第二连接层80b也可以采用焊料制成，此时传热件170通过焊接的方式与第一导热层12a连接。
本实施例中，主发热器件30与中板115之间相隔有第一电路板10和第二电路板20，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第二导热结构23和第三导热层22a传递至第二导热块41b，经导热组件40的热界面材料层42和第一导热块41a传递至第二导热层12b，并经第一导热结构13和第一导热层12a传递至传热件170，最终经传热件170传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的两层导热层22和第二导热结构23、导热组件40的两个导热块41和热界面材料层42、第一电路板10的两层导热层12和第一导热结构13、传热件170以及中板115形成了三维(three dimension，3D)散热拓扑网络，三维散热拓扑网络可通过散热管脚31接收主发热器件30工作时产生的热量，实现对主发热器件30的散热，以使散热装置 160的热流密度较低，散热效率较高，具有较好的工作可靠性。
本实施例所示三维散热拓扑网络可将远离中板115的第二电路板20的主发热器件30工作时产生的热量，传递至中板115进行有效的热扩散，实现热量在电子设备100内部的重分布，不仅可以降低主发热器件30的结温，有效解决了主发热器件30的散热问题，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用环境的限制。
在其他一些实施例中，散热装置160还可以包括三个或三个以上电路板，此时主发热器件30与中板115之间也可以相隔三个或三个以上电路板，三个或三个以上电路板同样可以构建三维散热拓扑网络实现对主发热器件30的有效散热。
接下来，为了便于理解，以主发热器件30工作时产生的总热量E为例，对三维散热拓扑网络对主发热器件30的散热路径进行说明。其中，主发热器件30的散热路径可参见图6所示的带箭头的黑色加粗虚线。
主发热器件30工作时，部分热量E1通过主发热器件30自身结构传递至外部环境，其余热量E2经过散热管脚31传递至第四导热层22b。热量E2经第四导热层22b传递至第二导热结构23，再经第二导热结构23传递至第三导热层22a。此时，热量E2中部分热量E3通过第二电路板20传递至外部环境，其余热量E4经第三导热层22a传递至导热组件40，再经导热组件40传递至第二导热层12b。热量E4经第二导热层12b传递至第一导热结构13，再经第一导热结构13传递至第一导热层12a。此时，热量E4中部分热量E5通过第一电路板10传递至外部环境，其余热量E6经第一导热层12a传递至传热件170，再经传热件170传递至中板115。此时，热量E6经中板115传递至外部环境。
可以理解的是，在忽略热量传递过程中的损耗的前提下，E＝E1+E2，E2＝E3+E4，E4＝E5+E6，即E＝E1+E3+E5+E6。换言之，主发热器件30工作时产生的热量可通过主发热器器件30、第二电路板20、第一电路板10和中板115四个部件传递至外部环境，实现对主发器件30的有效散热。
请参阅下表1，下表1是现有散热装置与本实施例所示散热装置通过有限元仿真的方式下测试得到的各部件的温度。其中，现有散热装置中未构建本实施例所示三维散热拓扑网络。
表1现有散热装置和本实施例所示散热装置中各部件的温度
方案 主发热器件 第二电路板 导热组件 第一电路板 传热件 中板
现有 69.1℃ 61.8℃ / 47.4℃ / 35.4℃
本实施例 51.2℃ 49.2℃ 43.6℃ 42.5℃ 40.6℃ 36.3℃
根据表1可知，本实施例所示电子设备100的散热装置160中，主发热器件30、第二电路板20和第一电路板10的温度明显低于现有散热装置的温度。尤其地，本实施例中主发热器急案30的温度由现有的69.1℃降低至51.2℃，结温收益约为60％。其中，结温收益＝100％-[(本实施例主发热器件温度-本实施例中板温度)/(现有主发热器件温度-现有中板温度)]。因此，本实施例所示散热装置160中所构建的三维散热拓扑网络有效降低了主发热器件30的温度，解决了主发热器件30的发热问题。
请参阅图7，图7是图5所示结构在另一种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路 板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，第四导热层22b相对于基板21的底面25露出。其中，第四导热层22b的底面(图未标)与基板21的底面25平齐。应当理解的是，第四导热层22b相对于基板21的底面21露出是指，第二电路板20的基板21不完全覆盖第四导热层22b。在其他一些实施例中，第四导热层22b的底面相对于基板21的底面25凸出，或者，第四导热层22b的底面相对于基板21的底面25凹陷。
主发热器件30包括散热管脚31和导线33。其中，散热管脚31为散热层。散热管脚31与第四导热层22b连接，即主发热器件30通过散热管脚31与第四导热层22b连接，以实现主发热器件30与第四导热层22b之间的热量传递。示例性的，散热管脚31通过芯片贴装(die attach或die bond)的方式与第四导热层22b连接。此时，散热管脚31通过焊料层32与第四导热层22b间接连接。
导线33与第四导热层22b电连接，即主发热器件30通过导线33与第四导热层22b电连接，以实现主发热器件30与第四导热层22b之间的电连接，进而实现主发热器件30与第二电路板20之间的电气连通。示例性的，导线33通过引线键合(wire bonding，WB)的方式与第四导热层22b电连接。其中，导线33可以有两根或两根以上。
请参阅图5和图8，图8是图5所示结构在第三种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第二种实施例所示电子设备100的各部件之间的结构大体相同，与上述第二种实施例不同之处在于，第二电路板20包括基板21、三层导热层22和第二导热结构23。三层导热层22和第二导热结构23均嵌设于基板21。三层导热层22之间彼此间隔设置，第二导热结构23包括多个导热件，第二导热结构23的每一导热件均连接于两层导热层22之间。
具体的，三层导热层22分别为第三导热层22a、第四导热层22b和第五导热层22c。第三导热层22a相对于基板21的顶面24露出。第四导热层22b位于第三导热层22a的底侧，与第三导热层22a平行且间隔设置，并相对于基板21的底面25露出。第五导热层22c位于第三导热层22a和第四导热层22b之间，并与第三导热层22a和第四导热层22b平行且间隔设置。示例性的，第三导热层22a、第四导热层22b和第五导热层22c均为接地层。其中，第三导热层22a、第四导热层22b和第五导热层22c可采用铜、银、铝、镁或锡等金属材料制成，以保证第三导热层22a、第四导热层22b和第五导热层22c具有较高的热导率。
第二导热结构23的部分导热件连接于第三导热层22a和第四导热层22b之间，第二导热结构23的部分导热件连接于第四导热层22b和第五导热层22c之间，以实现第三导热层22a、第四导热层22b和第五导热层22c之间的热量传递和电连接。具体的，第二导热结构23的多个导热件分别为第一导热件23a和第二导热件23b，第一导热件23a连接于第三导热层22a和第五导热层22c之间，第二导热件23b连接于第四导热层22b和第五导热层22c之间。本实施例中，第一导热件23a和第二导热件23b均有多个。多个第一导热件23a彼此间隔排布，以增加第三导热层22a和第五导热层22c之间的热量传递路径，加快第三导热层22a和第五 导热层22c之间的热量传递速度。多个第二导热件23b彼此间隔排布，以增加第四导热层22b与第五导热层22c之间的热量传递路径，加快第四导热层22b和第五导热层22c之间的热量传递速度。在其他一些实施例中，也可以有第二导热结构23的部分导热件连接于第三导热层22a和第四导热层22b之间，以缩短第三导热层22a和第四导热层22b之间的热量传递路径，提高两者之间的热量传递效率。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31传递至第四导热层22b，经第二导热件23b传递至第五导热层22c，经第一导热件23a和第三导热层22a传递至第二导热块41b，经导热组件40的热界面材料层42和第一导热块41a传递至第二导热层12b，并经第一导热结构13和第一导热层12a传递至传热件170，最终经传热件170传递至中板115，即可实现对主发热器件30的散热。
此时，第二电路板20的三层导热层22和第二导热结构23、导热组件40的两个导热块41和热界面材料层42、第一电路板10的两层导热层12和第二导热结构13、传热件170以及中板115形成了三维散热拓扑网络。主发热器件30工作时产生的热量可通过散热管脚31传递至三维散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部均匀分散，不仅可以降低主发热器件30的结温，有效解决主发热器件30的散热问题，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用的限制。
请参阅图9，图9是图5所示结构在第四种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，沿Z轴方向上，主发热器件30与第二导热结构23至少部分重叠。此时，主发热器件30和第二导热结构23在第四导热层22b上的正投影至少部分重叠，有助于缩短主发热器件30工作时产生的热量经主发热器件30的散热管脚31传递至第三导热层22a的散热路径，进而缩短了主发热器件30工作时产生的热量传递至中板115的散热路径，提高了主发热器件30的散热效率。
请参阅图5和图10，图10是图5所示结构在第五种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，导热组件40包括导热柱43，导热柱43有1个。导热柱43连接于第一电路板10的导热层12和第二电路板20的导热层22之间，以实现第一电路板10和第二电路板20之间的热量传递和电连接。其中，导热柱43可采用铜、银、铝、镁或锡等金属材料制成，以保证导热柱43的高热导率。
具体的，导热柱43连接于第二导热层12b和第三导热层22a之间。其中，导热柱43通 过第一连接层80a与第二导热层12b间接连接，且通过第二连接层80b与第三导热层22a间接连接。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第二导热结构23和第三导热层22a传递至导热组件40的导热柱43，经导热组件40的导热柱43传递至第二导热层12b，并经第一导热结构13和第一导热层12a传递至传热件170，最终经传热件170传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的两层导热层22和第二导热结构23、导热组件40的导热柱43、第一电路板10的两层导热层12和第一导热结构13、传热件170以及中板115形成三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至三维散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用环境的限制。
请参阅图5和图11，图11是图5所示结构在第六种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第五种实施例所示电子设备100的各部件之间的结构大体相同，与上述第五种实施例不同之处在于，导热柱43有两个，两个导热柱43彼此间隔设置，每一导热柱43均连接于第二导热层12b和第三导热层22a之间，以增加第一电路板10和第二导热层12b和第三导热层22a之间的热量传递路径，提高第一电路板10和第二导热层12b和第三导热层22a之间的热量传递效率。示例性的，导热柱43通过表面贴装技术(surface mounting technology，SMT)与第二导热层12b和第三导热层22a连接，实现与第二导热层12b和第三导热层22a之间的热量传递和电气连通。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第二导热结构23和第三导热层22a传递至导热组件40的两个导热柱43，经导热组件40的两个导热柱43传递至第二导热层12b，并经第一导热结构13和第一导热层12a传递至传热件170，最终经传热件170传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的两层导热层22和第二导热结构23、导热组件40的两个导热柱43、第一电路板10的两层导热层12和第一导热结构13、传热件170以及中板115形成三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至三维散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用场景的限制。
请参阅图5和图12，图12是图5所示结构在第七种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，第三导热层22a位于基板21的顶面24和底面25之间，即第三导热层22a不相对于基板21的顶面24露出。
导热组件40包括导热块41、热界面材料层42和封装器件44。导热块41连接于第一电路板10的导热层12，封装器件44连接于第二电路板20的导热层22，热界面材料层42连接于导热块41和封装器件44之间。在其他一些实施例中，也可以导热块41连接于第二电路板20的导热层22，封装器件44连接于第一电路板10的导热层12。
具体的，导热块41连接于第二导热层12b，以实现导热块41与第二导热层12b之间的热量传递和电连接。其中，导热块41通过第一连接层80a与第二导热层12b连接。示例性的，导热块41采用铜、银、率、镁或锡等金属材料制成，以保证导热块41具有较高的热导率。
封装器件44连接于第三导热层22a。示例性的，封装器件44可为射频前端模组、WIFI蓝牙通信模组或电源管理模组。本实施例中，封装器件44包括承载板441、散热管脚442、元器件443、散热柱444和封装层445。散热管脚442安装于承载板441的底面(图未标)。元器件442安装于承载板441的顶面(图未标)。其中，元器件443有两个，两个元器件443彼此间隔地安装于承载板的顶面。散热柱444安装于承载板441的顶面，且位于两个元器件443之间。封装层445覆盖承载板441、元器件443和散热柱444。
其中，散热柱444相对于封装层445的顶面(图未标)露出。本实施例中，散热柱444的顶面(图未标)与封装层445的顶面平齐。应当理解的是，散热柱444相对于封装层445的顶面露出是指，封装层445未完全覆盖散热柱444。在其他一些实施例中，散热柱444的顶面也可以相对于封装层445的顶面凸出，或者，散热柱444的顶面也可以相对于封装层445的顶面凹陷。
一些实施例中，封装层445设有连通孔(图未标)，连通孔使承载板441相对于封装层445露出。散热柱444位于连通孔，以与承载板441连接。其中，散热柱444可采用铜、银、铝、镁或锡等金属材料制成，以保证散热柱444具有较高的热导率。此时，散热柱444可为采用金属材料填充于连通孔以形成的金属柱，或者，散热柱444可为采用金属材料部分覆盖或完全覆盖连通孔的孔壁以形成的金属层。
承载板441包括基板446、散热层447和散热件448，散热层447和散热件448均嵌设于基板446。散热层447可采用铜、银、铝、镁或锡等金属材料制成，以保证散热层447具有较高的热导率。其中，散热件448有多个，多个散热件448彼此间隔排布。部分散热件448位于散热层447的一侧，且连接于散热层447与散热管脚31之间。部分散热件448位于散热层447的另一层，且连接于散热层447与散热柱444之间。此时，散热管脚442、承载板441的散热件448和散热层447以及散热柱444形成封装器件44内部的散热通道。
一些实施例中，基板446设有连通孔(图未标)，连通孔使散热层447相对于基板446露出。散热件448位于连通孔，以与散热层447连接。其中，散热件448可采用铜、银、铝、镁或锡等金属材料制成，以保证散热件448具有较高的热导率。此时，散热件448可为采用金属材料填充于连通孔以形成的金属柱，或者，散热件448可为采用金属材料部分覆盖或完全覆盖连通孔的孔壁以形成的金属层。
具体的，封装器件44的散热柱444连接于热界面材料层42，以通过热界面材料层42实现封装器件44与导热块41之间的热量传递和电连接。此时，热界面材料层42覆盖封装器件44的散热柱44的顶面(图未标)和封装层445的顶面(图未标)。其中，封装器件44和导热块41之间可采用贴装、点胶或涂覆等方式增加热界面材料以形成热界面材料层42。此时， 封装器件44和导热块41之间通过热界面材料层42间接连接，实现热量传递和电连接。封装器件44和导热块41之间的热界面材料可填充封装器件44的散热柱444和导热块41之间的空气间隙和公差冗余，降低封装器件44的散热柱444和导热块41之间的界面热阻，提高热传递效率。
封装器件44的散热管脚442连接于第三导热层22a，以实现封装器件44与第三导热层22a之间的热量传递和电连接。即封装器件44不仅可以通过散热管脚442实现与第三导热层22a之间的热量传递，还可以通过散热管脚442实现与第二电路板20的电气连通。在其他一些实施例中，封装器件44的散热管脚442也可以连接于第四导热层22b。
此时，封装器件44的散热管脚442兼具散热和接地两个功能，即封装器件44的散热管脚442也用作封装器件44的接地管脚。其中，封装器件44的散热管脚442通过第二连接层80b与第三导热层22a连接。示例性的，第二连接层80b为焊料层。封装器件44的散热管脚442可通过封装器件开孔(through molding via，TMV)工艺和焊接工艺与第三导热层22a连接。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第二导热结构23和第三导热层22a传递至导热组件40中封装器件44，经封装器件44的散热件448、散热层447和散热柱444传递至导热组件40的热界面材料层42，经导热组件40的导热块41传递至第二导热层12b，并经第一导热结构13和第一导热层12a传递至传热件170，最终经传热件170传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的两层导热层22和第二导热结构23、导热组件40的导热柱43、热界面材料层42和封装器件44内部的散热通道、第一电路板10的两层导热层12和第一导热结构13、传热件170以及中板115形成三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至三维散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用的限制。
此外，本实施例利用封装器件44本身的散热通道和其余部件共同形成三维散热拓扑网络中，可减少三维散热拓扑网络中导热块41(如第一种实施例所示)的数量，可提升第二电路板20的面积利用率，有利于电子设备100的小型化设计。
请参阅图13，图13是图5所示结构在第八种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第七种实施例所示电子设备100的各部件之间的结构大体相同，与上述第七种实施例不同之处在于，封装器件44还包括辅助散热层449，辅助散热层449连接于散热柱444与热界面材料层42之间，以使封装器件44通过辅助散热层449和热界面材料层42与导热块41间接连接，实现封装器件44与导热块41之间的热量传递和电气连通。其中，辅助散热层449覆盖散热柱444的顶面和封装层445的顶面。此时，封装器件44的散热管脚442、承载板441的散热件448和散热层447、散热柱444以及辅助散热层449形成封装器件44的散热通道。
请参阅图14，图14是图5所示结构在第九种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，第二导热结构23包括芯片，芯片连接于第二电路板20的两个导热层12之间，以实现两个导热层12之间的热量传递和电气连通。在其他一些实施例中，第一导热结构13也可以包括芯片。
芯片包括晶圆层231、表面导热层232、焊脚233和封装层234。晶圆层231可采用硅、氮化镓或碳化硅等半导体材料制成。此时，晶圆层231具有良好的导热性能，导热系数在100W/mk以上。表面导热层232固接于晶圆层231的底面(图未标)。其中，表面导热层232可采用铜、银、铝、镁或锡等金属材料制成，以保证表面导热层232具有较高的热导率。焊脚233固接于晶圆层231的顶面(图未标)。其中，焊脚233有多个，多个焊脚233彼此间隔排布。封装层234覆盖晶圆层231、表面导热层232和焊脚233。此时，表面导热层232、晶圆层231和焊脚233形成芯片内部的散热通道。
具体的，表面导热层232相对于封装层234的底面(图未标)露出，且连接于第四导热层22b。其中，表面导热层232的底面(图未标)与封装层234的底面平齐。应当理解的是，表面导热层232相对于封装层234的底面露出是指，封装层234未完全覆盖表面导热层232。在其他一些实施例中，表面导热层232的底面也可以相对于封装层234的底面凸出，或者，表面导热层232的底面也可以相对于封装层234的底面凹陷。
焊脚233相对于封装层234的顶面(图未标)露出，且连接于第三导热层22a。其中，焊脚233的顶面(图未标)与封装层234的顶面平齐。应当理解的是，焊脚233相对于封装层234的顶面露出是指，封装层234未完全覆盖焊脚。在其他一些实施例中，焊脚233的顶面也可以相对于封装层234的顶面凸出，或者，焊脚233的顶面也可以相对于封装层234的顶面凹陷。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第四导热层22b传递至芯片，经芯片的表面导热层232、晶圆层231和焊脚233传递至第三导热层22a，再经导热组件40传递至第二导热层12b，并经第一导热结构13和第一导热层12a传递至传热件170，最终经传热件170传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的两层导热层22和芯片内部的散热通道、导热组件40、第一电路板10的两层导热层12和第一导热结构13、传热件170以及中板115形成三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用的限制。
此外，本实施例利用芯片本身的散热通道取代了上述实施例所示第二电路板20中第二导热结构23所采用的金属柱或金属层，由于芯片的晶圆层231具有较好的良好导热性能，可有效降低芯片本身的散热通道和其余部件共同形成的三维散热拓扑网络的热阻，实现对主发热 器件30的有效散热。
而且，由于芯片在平面方向上的尺寸在500μm～5000μm之间，厚度方向上的尺寸在50μm～500μm之间，实现了散热拓扑网络中高导热材料的高密度集成，增加了第二电路板20的面积利用率的收益，提高了散热装置160的集成度。
请参阅图15，图15是图5所示结构在第十种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第九种实施例所示电子设备100的各部件之间的结构大体相同，与上述第九种实施例不同之处在于，表面导热层232连接于第三导热层22a，焊脚233连接于第四导热层22b，以使芯片连接于第四导热层22b和第三导热层22a之间，实现第四导热层22b和第三导热层22a之间的热量传递和电连接。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第四导热层22b传递至芯片，经芯片的焊脚233、晶圆层231和表面导热层232传递至第三导热层22a，再经导热组件40传递至第二导热层12b，并经第一导热结构13和第一导热层12a传递至传热件170，最终经传热件170传递至中板115，实现对主发热器件30的散热。
请参阅图5和图16，图16是图5所示结构在第十一种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，第一导热结构13包括芯片，芯片连接于第一电路板10的两个导热层12之间，以实现两个导热层12之间的热量传递和电气连通。
芯片包括晶圆层131、表面导热层132、焊脚133和封装层134。晶圆层131可采用硅、氮化镓或碳化硅等半导体材料制成。此时，晶圆层131具有良好的导热性能，导热系数在100W/mk以上。表面导热层132固接于晶圆层131的底面(图未标)。其中，表面导热层132可采用铜、银、铝、镁或锡等金属材料制成，以保证表面导热层132具有较高的热导率。焊脚133固接于晶圆层131的顶面(图未标)。其中，焊脚133有多个，多个焊脚133彼此间隔排布。封装层134覆盖晶圆层131、表面导热层132和焊脚133。此时，表面导热层132、晶圆层131和焊脚133形成芯片内部的散热通道。
具体的，表面导热层132相对于封装层134的底面(图未标)露出，且连接于第二导热层12b。其中，表面导热层132的底面(图未标)与封装层134的底面平齐。应当理解的是，表面导热层132相对于封装层134的底面露出是指，封装层134未完全覆盖表面导热层132。在其他一些实施例中，表面导热层132的底面也可以相对于封装层134的底面凸出，或者，表面导热层132的底面也可以相对于封装层134的底面凹陷。
焊脚133相对于封装层134的顶面(图未标)露出，且连接于第一导热层12a。其中，焊脚133的顶面(图未标)与封装层134的顶面平齐。应当理解的是，焊脚133相对于封装层134的顶面露出是指，封装层134未完全覆盖焊脚。在其他一些实施例中，焊脚133的顶面也可以相对于封装层134的顶面凸出，或者，焊脚133的顶面也可以相对于封装层134的顶面凹陷。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第二导热结构23和第三导热层22a传递至导热组件40，再经导热组件40传递至第二导热层12b，经第二导热层12b传递至芯片，经芯片的表面导热层132、晶圆层131和焊脚133以及第一导热层12a传递至传热件170，最终经传热件170传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的两层导热层22和第二导热结构23、导热组件40、第一电路板10的两层导热层12和芯片内部的散热通道、传热件170以及中板115形成三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用的限制。
此外，本实施例利用芯片本身的散热通道取代了上述实施例所示第一电路板10中第一导热结构13所采用的金属柱或金属层，由于芯片的晶圆层131具有较好的良好导热性能，可有效降低芯片本身的散热通道和其余部件共同形成的三维散热拓扑网络的热阻，实现对主发热器件30的有效散热。
而且，由于芯片在平面方向上的尺寸在500μm～5000μm之间，厚度方向上的尺寸在50μm～500μm之间，实现了散热拓扑网络中高导热材料的高密度集成，增加了第一电路板10的面积利用率的收益，提高了散热装置160的集成度。
在其他一些实施例中，芯片的表面导热层132可以连接于第一导热层12a，芯片的焊脚133可以连接于第二导热层12b，以使芯片连接于第二导热层22b和第一导热层12a之间。
请参阅图5和图17，图17是图5所示结构在第十二种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，第一电路板10包括基板11、三层导热层12和第一导热结构13，三层导热层12和第一导热结构13均嵌设于基板11。三层导热层12之间彼此间隔设置，第一导热结构13包括多个导热件，第一导热结构13的每一导热件均连接于两层导热层12之间。
具体的，三层导热层12分别为第一导热层12a、第二导热层12b和第六导热层12c。第一导热层12a相对于基板11的顶面14露出。第二导热层12b和第六导热层12c均位于第一导热层12a的底侧，与第一导热层12a平行且间隔设置，并相对于基板11的底面15露出。其中，第一导热层12a、第二导热层12b和第六导热层12c均为接地层。此时，第一导热层12a、第二导热层12b和第六导热层12c可采用铜、银、铝、镁或锡等金属材料制成，以保证 第一导热层12a、第二导热层12b和第三导热层12b具有较高的热导率。
第一导热结构13的部分导热件连接于第一导热层12a和第二导热层12b之间，第一导热结构13的部分导热件连接于第一导热层12a和第六导热层12c之间，以实现第一导热层12a与第二导热层12b和第六导热层12c之间的连接。具体的，第一导热结构13的多个导热件分别为第一导热件13a和第二导热件13b，第一导热件13a连接于第一导热层12a和第二导热层12b之间，第二导热件13b连接于第一导热层12a和第六导热层12c之间。在其他一些实施例中，第一导热结构13的部分导热件也可以连接于第二导热层12b和第六导热层12c之间。
本实施例中，第一导热件13a和第二导热件13b均有多个。多个第一导热件13a彼此间隔排布，以增加第一导热层12a和第二导热层12b之间的热量传递路径，加快第一导热层12a和第二导热层12b之间的热量传递速度。多个第二导热件13b彼此间隔排布，以增加第一导热层12a与第六导热层12c之间的热量传递路径，加快第二导热层12b和第六导热层12c之间的热量传递速度。
一些实施例中，基板11设有多个第一连通孔(图未标)和多个第二连通孔(图未标)。第一连通孔连通第一导热层12a和第二导热层12b，第二连通孔连通第一导热层12a和第三导热层12c。具体的，每一第一导热件13a位于一个第一连通孔，以连接第一导热层12a和第二导热层12b。每一第二导热件13b位于一个第二连通孔，以连接第一导热层12a和第六导热层12c。其中，第一导热件13a和第二导热件13b可采用铜、银、铝、镁或锡等金属材料制成，以保证第一导热件13a和第二导热件13b具有较高的热导率，提高第一导热层12a与第二导热层12b和第三导热层13c之间的热量传递效率。此时，第一导热件13a和第二导热件13b可为采用金属材料填充于连通孔以形成的金属柱，或者，第一导热件13a和第二导热件13b可为采用金属材料部分覆盖或完全覆盖连通孔的孔壁以形成的金属层。
第二电路板20包括基板21、三层导热层22、第二导热结构23和辅助导热层26。三层导热层22和第二导热结构23均嵌设于基板21，三层导热层22之间彼此间隔设置。辅助导热层26固接于基板21的顶面24。第二导热结构23包括多个导热件，第二导热结构23的部分导热件连接于两层导热层22之间，第二导热结构23的部分导热件连接于导热层23和辅助导热层26之间。
具体的，三层导热层22均位于基板21的顶面24和顶面25之间，三层导热层22分别为第三导热层22a、第四导热层22b和第五导热层22c。第四导热层22b位于第三导热层22a的底侧，与第三导热层22a平行且间隔设置，并位于基板21的底面25与顶面24之间。第五导热层22c位于第四导热层22b的顶侧，并与第四导热层22b平行且间隔设置。其中，第三导热层22a、第四导热层22b和第五导热层22c均为接地层。此时，第三导热层22a、第四导热层22b和第五导热层22c可采用铜、银、铝、镁或锡等金属材料制成，以保证第三导热层22a、第四导热层22b和第五导热层22c具有较高的热导率。
辅助导热层26覆盖基板21的顶面24，以提高散热装置160的散热效率。辅助导热层27与第三导热层22a平行且间隔设置。其中，辅助导热层26为接地层。此时，辅助导热层26可采用铜、银、铝、镁或锡等金属材料制成，以保证辅助导热层26具有较高的热导率。
第二导热结构23的部分导热件连接于第一导热层22a和第五导热层22c之间，第二导热结构23的部分导热件连接于第五导热层22c和第四导热层22b之间，第二导热结构23的部分导热件连接于第三导热层22a和辅助导热层26之间，第二导热结构23的部分导热件连接于第五导热层22c和辅助导热层26之间，以实现第三导热层22a、第四导热层22b、第五导热层22c和辅助导热层26之间的两两连接。在其他一些实施例中，也可以有第二导热结构 23的部分导热件连接于辅助导热层26和第四导热层22b之间，和/或，第二导热结构23的部分导热件连接于第三导热层22a和第五导热层22c之间。
具体的，第二导热结构23分别为第一导热件23a、第二导热件23b、第三导热件23c和第四导热件23d，第一导热件23a连接于第三导热层22a和第四导热层22b之间，第二导热件23b连接于第五导热层22c和第四导热层22b之间，第三导热件23c连接于第三导热层22a和辅助导热层26之间，第四导热件23d连接于第五导热层22c和辅助导热层26之间。
本实施例中，第一导热件23a、第二导热件23b、第三导热件23c和第四导热件23d均有多个。多个第一导热件23a彼此间隔排布，以增加第三导热层22a和第四导热层22b之间的热量传递路径，加快第三导热层22a和第四导热层22b之间的热量传递速度。多个第二导热件23b彼此间隔排布，以增加第四导热层22b与第五导热层22c之间的热量传递路径，加快第四导热层22b和第五导热层22c之间的热量传递速度。多个第三导热件23c彼此间隔排布，以增加第三导热层22a和辅助导热层26之间的热量传递路径，加快第三导热层22a和辅助导热层26之间的热量传递速度。多个第四导热件23d彼此间隔排布，以增加第五导热层22c和辅助导热层26之间的热量传递路径，加快第五导热层22c和辅助导热层26之间的热量传递速度。
一些实施例中，基板21设有多个第一连通孔(图未标)、多个第二连通孔(图未标)、多个第三连通孔(图未标)和多个第四连通孔(图未标)。第一连通孔连通第三导热层22a和第四导热层22b，第二连通孔连通第四导热层22b和第五导热层22c，第三连通孔使第三导热层22a相对于基板11露出，第四连通孔使第五导热层22c相对于基板11露出。具体的，每一第一导热件23a位于一个第一连通孔，每一第二导热件23b位于一个第二连通孔，每一第三导热件23c位于一个第三连通孔，每一第四导热件23d位于一个第四连通孔。其中，第一连通孔和第二连通孔为过孔或埋孔，第三连通孔和第四连通孔为盲孔。
其中，第一导热件23a、第二导热件23b、第三导热件23c和第四导热件23d可采用铜、银、铝、镁或锡等金属材料制成，以保证第一导热件23a、第二导热件23b、第三导热件23c和第四导热件23d具有较高的热导率，提高第三导热层22a、第四导热层22b、第三导热层23c和辅助导热层26之间的热量传递效率。此时，第一导热件23a、第二导热件23b、第三导热件23c和第四导热件23d可为采用金属材料填充于相应的连通孔以形成的金属柱，或者，第一导热件23a、第二导热件23b、第三导热件23c和第四导热件23d可为采用金属材料部分覆盖或完全覆盖相应的连通孔的孔壁以形成的金属层。
本实施例中，散热装置160还包括柔性电路板(flexible printed circuit，FPC)162，柔性电路板162电连接于第一电路板10和第二电路板20之间，以实现第一电路板10和第二电路板20之间的电气连通，以实现第一电路板10和第二电路板20之间的通讯连接。在其他一些实施例中，第一电路板10和第二电路板20也可以通过信号框板结构实现电器连通。
导热组件40包括导热柱43，导热柱43均连接于第一电路板10和第二电路板20之间。其中，每一导热柱43均通过第一连接层80a与第一电路板10间接连接，并通过第二连接层80b与第二电路板20间接连接。其中，导热柱43采用铜、银、铝、镁或锡等金属材料制成，以保证导热柱43具有较高的热导率。
具体的，导热柱43连接于第二导热层12b和第二电路板20的辅助导热层26之间，以实现第二导热层12b和第二电路板20的辅助导热层26之间的热量传递。此时，导热柱43均与第一电路板10和第二电路板20的接地层电连接，因此导热柱43也处于接地状态。
本实施例中，两个支撑柱50分别为第一支撑柱50a和第二支撑柱50b。第一支撑柱50a 连接于第一电路板10的第六导热层12c和第二电路板20的辅助导热层26之间，以实现第一电路板10的第六导热层12c和第二电路板20的辅助导热层26之间的热量传递和电连接。第二支撑柱50a连接于第一电路板10的基板11和第二电路板20的辅助导热层26之间。第一支撑柱50a与第二电路板20的接地层电连接，因此第一支撑柱50a也处于接地状态。
请一并参阅图18，图18是图17所示结构中导热组件40和第一元器件60在一种实施方式下在第一电路板10的底面上的正投影的部分结构示意图。
本实施方式中，一个第一元器件60位于导热柱43和第一支撑柱50a之间。此时，导热柱43和第一支撑柱50a分别位于功能器件的两侧，且均接地，可与第一电路板10的辅助导热层26形成第一元器件60的电磁屏蔽结构，具有一定的电磁屏蔽作用，可防止外部器件对第一元器件60的电磁干扰，或者，避免第一元器件60对其他器件造成电磁干扰。应当理解的是，导热柱43的形状并不局限于图19所示的方柱形，也可以为圆柱形或其他异性柱状。
请参阅图17和图19，图19是图17所示结构中导热组件40和第一元器件60在另一种实施方式下在第一电路板10的底面上的正投影的部分结构示意图。
本实施方式中，导热柱43和第一支撑柱50a均为多个。多个导热柱43和多个第一支撑柱50a彼此间隔地环绕第一元器件60设置。其中，多个导热柱43和多个第一支撑柱50a可与第二电路板20的辅助导热层26形成第一元器件60的电磁屏蔽架构，可防止外部器件对第一元器件60的电磁干扰，或者，避免第一元器件60对其他器件造成电磁干扰。应当理解的是，导热柱43的形状并不局限于图19所示的圆柱形，也可以为方柱形或其他异形柱状。
在其他一些实施例中，也可以只有一个导热柱43，其余的均为第一支撑柱50a，或者，只有一个第一支撑柱50a，其余的均为导热柱43，本申请对此不作具体限定。
请参阅图17和图20，图20是图17所示结构中导热组件40和第一元器件60在第三种实施方式下在第一电路板10的底面上的正投影的部分结构示意图。
本实施方式中，多个导热柱43和多个第一支撑柱50a彼此固接围合形成导热框架45，第一元器件60位于导热框架45的内侧。其中，多个导热柱43和多个第一支撑柱50a可一体成型形成导热框架45。此时，导热框架45可与第二电路板20的辅助导热层26形成第一元器件60的电磁屏蔽架构，以全方位保护功能器件，可防止外部器件对第一元器件60的电磁干扰，或者，避免第一元器件60对其他器件造成电磁干扰。应当理解的是，金属框架45的形状并不局限于图20所示的方环形，也可以为圆环形或其他异形环状。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第一导热件23a和第二导热件23b分别传递至第二电路板的第三导热层23c和第三导热层23c，经第二电路板20的第三导热件23c和第四导热件23d传递至第二电路板20的辅助导热层26，再经导热组件40的导热柱43和第一支撑柱50a分别传递至第二导热层12b和第六导热层12c，经第一电路板10的第一导热件13a和第二导热件13b传递至第一导热层12a，最终经传热件170传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的三层导热层22、第二导热结构23和辅助导热层26、导热组件40的导热柱43、第一支撑柱50a、第一电路板10的三层导热层12和第一导热结构13、传热件170以及中板115形成三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用的限制。
此外，本实施例中，利用柔性电路板162实现第二电路板20与第一电路板10之间的信号联通，使得第二电路板20与第一电路板10之间无需采用硬接触的方式的实现信号传递。此时，导热组件40中的导热柱43，可以采用焊接与第二电路板20的导热层22和第一电路板10的辅助导热层26连接，可以减少热界面材料的引入，有助于降低三维散热拓扑网络的热阻，进而降低主发热器件30的结温。此外，导热组件40的导热柱43与第二电路板20的辅助导热层26可形成第一元器件60的电磁屏蔽结构，起到电磁屏蔽作用。
请参阅图5和图21，图21是图5所示结构在第十三种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，第一导热层12a位于基板11的顶面14和底面15之间，即第二电路板10的第一导热层12a不相对于基板11的顶面14露出。
传热件170包括封装器件。示例性的，封装器件可为射频前端模组、WIFI蓝牙通信模组或电源管理模组。本实施例中，封装器件包括承载板172、散热管脚173、元器件174、散热柱175和封装层176。散热管脚173安装于承载板172的底面(图未标)。元器件173安装于承载板172的顶面(图未标)。其中，元器件174有两个，两个元器件174彼此间隔地安装于承载板的顶面。散热柱175安装于承载板172的顶面，且位于两个元器件174之间。封装层176覆盖承载板172、元器件174和散热柱175。
其中，散热柱175相对于封装层176的顶面(图未标)露出。本实施例中，散热柱175的顶面(图未标)与封装层176的顶面平齐。应当理解的是，散热柱175相对于封装层176的顶面露出是指，封装层176未完全覆盖散热柱175。在其他一些实施例中，散热柱175的顶面也可以相对于封装层176的顶面凸出，或者，散热柱175的顶面也可以相对于封装层176的顶面凹陷。
一些实施例中，封装层176设有连通孔(图未标)，连通孔使承载板172相对于封装层176露出。散热柱175位于连通孔，以与承载板172连接。其中，散热柱175可采用铜、银、铝、镁或锡等金属材料制成，以保证散热柱175具有较高的热导率。此时，散热柱175可为采用金属材料填充于连通孔以形成的金属柱，或者，散热柱175可为采用金属材料部分覆盖或完全覆盖连通孔的孔壁以形成的金属层。
承载板172包括基板177、散热层178和散热件179，散热层178和散热件179均嵌设于基板177。散热层178可采用铜、银、铝、镁或锡等金属材料制成，以保证散热层178具有较高的热导率。其中，散热件179有多个，多个散热件179彼此间隔排布。部分散热件179位于散热层178的一侧，且连接于散热层178与散热管脚31之间。部分散热件179位于散热层178的另一层，且连接于散热层178与散热柱175之间。此时，散热管脚173、承载板172的散热件179和散热层178以及散热柱175形成封装器件的散热通道。
一些实施例中，基板177设有连通孔(图未标)，连通孔使散热层178相对于基板177露出。散热件179位于连通孔，以与散热层178连接。其中，散热件179可采用铜、银、铝、镁或锡等金属材料制成，以保证散热件179具有较高的热导率。此时，散热件179可为采用 金属材料填充于连通孔以形成的金属柱，或者，散热件179可为采用金属材料部分覆盖或完全覆盖连通孔的孔壁以形成的金属层。
具体的，封装器件的散热柱175连接于中板115，以实现封装器件与中板115之间的热量传递和电气连通。本实施例中，封装器件的散热柱175通过第一传热层180a与中板115连接。此时，第一传热层180a覆盖封装器件的散热柱175的顶面(图未标)和封装层176的顶面(图未标)。示例性的，第一传热层180a为热界面材料层。其中，封装器件和中板115之间可采用贴装、点胶或涂覆等方式增加热界面材料以形成第一传热层180a。此时，封装器件和中板115之间通过第一传热层180a间接连接，实现热量传递和电连接。封装器件和中板115之间的热界面材料可填充封装器件的散热柱175和中板115之间的空气间隙和公差冗余，降低封装器件的散热柱175和中板115之间的界面热阻，提高热传递效率。
封装器件的散热管脚173连接于第一导热层12a，以实现封装器件与第一导热层12a之间的热量传递和电连接。即封装器件不仅可以通过散热管脚173实现与第一导热层12a之间的热量传递，还可以通过散热管脚173实现与第一电路板10的电气连通。在其他一些实施例中，封装器件的散热管脚172也可以连接于第二导热层12b。
此时，封装器件的散热管脚173兼具散热和接地两个功能，即封装器件的散热管脚173也用作封装器件的接地管脚。其中，封装器件的散热管脚172通过第二传热层180b与第一导热层12a连接。示例性的，第二传热层180b为焊料层。封装器件的散热管脚173可通过封装器件开孔(through molding via，TMV)工艺和焊接工艺与第一导热层12a。
在其他一些实施例中，传热件170还可以包括传热块。传热块有一个，一个传热块连接于封装器件的散热通道和中板115之间，或者，一个传热块连接于封装器件的散热通道和第一导热层12a之间。或者，传热块有两个，一个传热块连接于封装器件的散热通道和中板115之间，另一个传热块连接于封装器件的散热通道和第一导热层12a之间。
本实施例中，主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第二导热结构23和第三导热层22a传递至导热组件40，经导热组件40传递至第二导热层12b，并经第一导热结构13和第一导热层12a传递至封装器件，最终经封装器件的散热件179、散热层178和散热柱175传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的两层导热层22和第二导热结构23、导热组件40、第一电路板10的两层导热层12和第一导热结构13、封装器件的散热通道以及中板115形成三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至三维散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用的限制。
此外，本实施例利用封装器件本身的散热通道和其余部件共同形成三维散热拓扑网络中，可减少三维散热拓扑网络中传热块(如第一种实施例所示)的数量，可提升第一电路板10的面积利用率，有利于电子设备100的小型化设计。
请参阅图22，图22是图5所示结构在第十四种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第十三种实施例所示电子设备100的各部件之间的结构大体相同，与上述第十三种实施例不同之处在于，封装器件还包括辅助散热层170a，辅助散热层170a连接于散热柱175与第一传热层180a之间，以使封装器件通过辅助散热层170a和第一传热层180a与中板115间接连接，实现封装器件与中板115之间的热量传递和电气连通。其中，辅助散热层170a覆盖散热柱175的顶面和封装层176的顶面。此时，封装器件的散热管脚173、承载板172的散热件179和散热层178、散热柱175以及辅助散热层170a形成封装器件的散热通道。
请参阅图5和图23，图23是图5所示结构在第十五种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第一种实施例所示电子设备100的各部件之间的结构大体相同，与上述第一种实施例不同之处在于，第一电路板10包括基板11、两层导热层12、第一导热结构13和辅助导热层16。两层导热层12和第一导热结构13均嵌设于基板11，两层导热层12之间彼此间隔设置。辅助导热层16固接于基板11的顶面14。第一导热结构13包括多个导热件，第一导热结构13的部分导热件连接于两层导热层12之间，第一导热结构13的部分导热件连接导热层13和辅助导热层16之间。
具体的，两层导热层12分别为第一导热层12a和第二导热层12b。第一导热层12a位于基板11的顶面14和底面15之间。第二导热层12b位于第一导热层12a的底侧，与第一导热层12a平行且间隔设置，且相对于基板11的底面15露出。其中，第一导热层12a和第二导热层12b均为接地层。此时，第一导热层12a和第二导热层12b可采用金属铜、银、铝、镁或锡等金属材料制成，以保证第一导热层12a和第二导热层12b具有较高的热导率。
辅助导热层16覆盖基板11的顶面，并与第一导热层11平行且间隔设置。其中，辅助导热层16为接地层。此时，辅助导热层16可采用铜、银、铝、镁或锡等金属材料制成，以保证辅助导热层16具有较高的热导率。
第一导热结构13的多个导热件分别为第一导热件13a和第二导热件13b，第一导热件13a连接于第一导热层12a和第二导热层12b之间，第二导热件13b连接于第一导热层12a和辅助导热层16之间，以实现第一导热层12a、第二导热层12b和辅助导热层16之间的两两连接。在其他一些实施例中，第一导热结构13的部分导热件也可以连接于第二导热层12b与辅助导热层16之间。
本实施例中，第一导热件13a和第二导热件13b均有多个。多个第一导热件13a彼此间隔排布，以增加第一导热层12a和第二导热层12b之间的热量传递路径，加快第一导热层12a和第二导热层12b之间的热量传递速度。多个第二导热件13b彼此间隔排布，以增加第一导热层12a与辅助导热层16之间的热量传递路径，加快第一导热层12a与辅助导热层16之间的热量传递速度。
一些实施例中，基板11设有多个第一连通孔(图未标)和多个第二连通孔(图未标)。第一连通孔连通第一导热层12a和第三导热层12b，第二连通孔连通第一导热层12a和辅助导热层16。具体的，每一第一导热件13a位于一个第一连通孔，每一第二导热件13b位于一个第二连通孔。其中，第一导热件13a和第二导热件13b可采用铜、银、铝、镁或锡等金属材 料制成，以保证第一导热件13a和第二导热件13b具有较高的热导率，提高第一导热层12a第二导热层12b和辅助导热层16之间的热量传递效率。此时，第一导热件13a和第二导热件13b可为采用金属材料填充于相应的连通孔以形成的金属柱，或者，第一导热件13a和第二导热件13b可为采用金属材料部分覆盖或完全覆盖相应的连通孔的孔壁以形成的金属层。
本实施例中，第一电路板10的辅助导热层16固接于中板115，以实现中板115与第一导热层12a之间的热量传递和电气连通。示例性的，第一电路板10和中板115之间可通过螺钉或螺栓等固定件实现彼此固定。
主发热器件30工作时产生的热量可通过散热管脚31先传递至第四导热层22b，经第二电路板22b的第二导热结构23和第三导热层22a传递至导热组件40，经第二导热层12b和第一导热件13a传递至第一导热层12a，再经第一电路板10的第二导热件13b和辅助导热层16传递至中板115，实现对主发热器件30的散热。
此时，第二电路板20的两层导热层22和第一导热结构23、导热组件40、第一电路板10的两层导热层12、第一导热结构13和辅助导热层16以及中板115形成了三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至三维散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用的限制。
此外，本实施例利用第一电路板10的辅助导热层16将热量传递至中板115，不需要上述实施例所示传热件170(如图6所示)，有助于降低三维散热拓扑网络的热阻，提高对主发热器件30的散热效率。
请参阅图24，图24是图5所示结构在第十六种实施例下沿I-I方向剖开的局部剖面结构示意图。
散热装置160包括第一电路板10、第二电路板20、主发热器件30和导热组件40。第二电路板20位于第一电路板10的底侧，且与第一电路板10间隔设置。主发热器件30安装于第二电路板20，且与第二电路板20电连接。导热组件40连接于第一电路板10和第二电路板20之间。
本实施例中所示电子设备100的各部件之间的结构与上述第十四种实施例所示电子设备100的各部件之间的结构大体相同，与上述第十四种实施例不同之处在于，电子设备100还包括辅助传热层190，辅助传热层190连接于中板115与第一电路板10的辅助导热层16之间。即中板115通过辅助传热层190与第一电路板10的辅助导热层16连接。
一种实施方式中，辅助传热层190为焊料层。具体的，第一电路板10的辅助导热层16通过焊接的方式焊接于中板115。此时，第一电路板10与中板115之间可通过焊料层实现热量传递和电气连通。
另一种实施方式中，辅助传热层190为热界面材料层。示例性的，第一电路板10的辅助导热层16和中板115之间可通过贴装、点胶或涂覆等方式增加热界面材料以形成辅助传热层190。此时，第一电路板10的辅助导热层16通过热界面材料与中板115间接连接，实现与中板115之间的热量传递。热界面材料位于第一导热层12a和中板115之间，可填充第一电路板10的辅助导热层16和中板115之间的空气间隙和公差冗余，降低第一电路板10的辅助导热层16和中板115之间的界面热阻，提高第一电路板10的辅助导热层16和中板115之间的热传递效率。
第三种实施方式中，辅助传热层190为导热胶层。具体的，第一电路板10的辅助导热层 16通过粘接的方式与中板115连接。此时，第一电路板10的辅助导热层16和中板115之间可通过导热胶层实现热量传递和电气连通。
本实施例中，第二电路板20的两层导热层22和第二导热结构23、导热组件40、第一电路板10的两层导热层12、第一导热结构13和辅助导热层16以及中板115形成了三维散热拓扑网络，主发热器件30工作时产生的热量可通过散热管脚31传递至三维散热拓扑网络，三维散热拓扑网络可将热量在电子设备100的内部分散，不仅可以降低主发热器件30的结温，提高主发热器件30的工作效率和使用寿命，还可以避免主发热器件30在电子设备100的壳体110上形成局部热点，避免主发热器件30的热量对电子设备100应用场景的限制。
以上描述，仅为本申请的部分实施例和实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内；在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。因此，本申请的保护范围应以权利要求的保护范围为准。

Claims (28)

  1. 一种散热装置，其特征在于，包括：
    第一电路板，包括彼此间隔的第一导热层、第二导热层以及连接于所述第一导热层和所述第二导热层之间的第一导热结构，所述第一导热层用于与散热器连接；
    第二电路板，位于所述第一电路板的一侧，且与所述第一电路板彼此间隔设置，所述第二电路板包括彼此间隔的第三导热层、第四导热层以及连接于所述第三导热层和所述第四导热层之间的第二导热结构；
    支撑柱，连接于所述第一电路板和所述第二电路板之间，以在所述第一电路板和所述第二电路板之间形成空气层；
    主发热器件，安装于所述第二电路板，所述主发热器件的散热管脚与所述第四导热层连接；
    及导热组件，连接于所述第二导热层与所述第三导热层之间。
  2. 根据权利要求1所述的散热装置，其特征在于，所述第一导热层和所述第二导热层沿所述第一电路板的厚度方向间隔排布，所述第二导热层位于所述第一电路板靠近所述第二电路板的一侧；
    所述第三导热层和所述第四导热层沿所述第二电路板的厚度方向间隔排布，所述第四导热层位于所述第二电路板背离所述第一电路板的一侧；
    所述主发热器件安装于所述第二电路板背离所述第一电路板的一侧，所述导热组件位于所述空气层内。
  3. 根据权利要求1或2所述的散热装置，其特征在于，沿所述第二电路板的厚度方向上，所述主发热器件与所述第二导热结构至少部分重叠。
  4. 根据权利要求1至3中任一项所述的散热装置，其特征在于，所述主发热器件在所述第一电路板上的正投影位于所述第一电路板内。
  5. 根据权利要求1至4中任一项所述的散热装置，其特征在于，沿所述第二电路板的厚度方向上，所述导热组件与所述第二导热结构至少部分重叠。
  6. 根据权利要求1至5中任一项所述的散热装置，其特征在于，沿所述第一电路板的厚度方向上，所述导热组件与所述第一导热结构至少部分重叠。
  7. 根据权利要求1至6中任一项所述的散热装置，其特征在于，所述导热组件包括两个导热块和热界面材料层，一个所述导热块连接于所述第二导热层，另一个所述导热块连接于所述第三导热层，所述热界面材料层连接于两个所述导热块之间。
  8. 根据权利要求1至6中任一项所述的散热装置，其特征在于，所述导热组件包括导热柱，所述导热柱连接于所述第二导热层与所述第三导热层之间。
  9. 根据权利要求8所述的散热装置，其特征在于，所述散热装置还包括第一元器件，所述第一元器件安装于所述第一电路板或所述第二电路板；
    所述导热柱和所述支撑柱均采用金属材料制成，且均处于接地状态；
    所述导热柱有一个，一个所述导热柱和所述支撑柱分别位于所述第一元器件的两侧；
    或者，所述导热柱有多个，多个所述导热柱和所述支撑柱彼此间隔环绕所述第一元器件设置，或，多个所述导热柱和所述支撑柱彼此固接围合形成金属框架，所述第一元器件位于所述金属框架的内侧。
  10. 根据权利要求9所述的散热装置，其特征在于，所述第一元器件包括天线模块、前端模块、调制解调器、信号收发器、内存、闪存、连接器、功能传感器、电阻、电容、电感或 晶振中的一种或多种。
  11. 根据权利要求1至6中任一项所述的散热装置，其特征在于，所述导热组件包括封装器件，所述封装器件设有散热通道，所述封装器件的散热通道连接于所述第二导热层和所述第三导热层之间。
  12. 根据权利要求11所述散热装置，其特征在于，所述封装器件包括：
    承载板，所述承载板的内部设有散热件；
    散热管脚，位于所述承载板的一侧，且与所述承载板的散热件连接；
    散热柱，位于所述承载板的另一侧，且与所述承载板的散热件连接；
    及封装层，覆盖所述承载板和所述散热柱，所述散热柱相对于所述封装层露出；
    所述散热管脚、所述散热件和所述散热柱形成所述封装器件的散热通道。
  13. 根据权利要求11所述的散热装置，其特征在于，所述封装器件包括：
    承载板，所述承载板的内部设有散热件；
    散热管脚，位于所述承载板的一侧，且与所述承载板的散热件连接；
    散热柱，位于所述承载板的另一侧，且与所述承载板的散热件连接；
    封装层，覆盖所述承载板和所述散热柱，所述散热柱相对于所述封装层露出；
    及辅助散热层，覆盖所述散热柱和所述封装层；
    所述散热管脚、所述散热件、所述散热柱和所述辅助散热层形成所述封装器件的散热通道。
  14. 根据权利要求11至13中任一项所述的散热装置，其特征在于，所述导热组件还包括导热块；
    所述导热块为一个，所述导热块连接于所述封装器件的散热通道与所述第二导热层之间，或者，所述导热块连接于所述封装器件的散热通道与所述第三导热层之间；
    所述导热块有两个，一个所述导热块连接于所述封装器件的散热通道与所述第二导热层之间，另一所述导热块连接于所述封装器件的散热通道与所述第三导热层之间。
  15. 根据权利要求14所述的散热装置，其特征在于，所述导热组件还包括热界面材料层，所述热界面材料层连接于所述导热块与所述封装器件的散热通道之间。
  16. 根据权利要求1至15中任一项所述的散热装置，其特征在于，所述散热装置还包括连接层，所述连接层采用焊料制成，或者，所述连接层采用热界面材料制成，或者，所述连接层采用导热胶制成；
    所述连接层有一层，所述连接层连接于所述导热组件与所述第二导热层之间，或，所述连接层连接于所述导热组件与所述第三导热层之间；
    或者，所述连接层有两层，一层所述连接层连接于所述导热组件与所述第二导热层之间，另一层所述连接层连接于所述导热组件与所述第三导热层之间。
  17. 根据权利要求1至16中任一项所述的散热装置，其特征在于，所述第一导热结构包括芯片，所述第一导热结构的芯片设有散热通道，所述第一电路板的芯片的散热通道连接于所述第一导热层和第二导热层之间。
  18. 根据权利要求17所述的散热装置，其特征在于，所述第一导热结构的芯片包括：
    晶圆层；
    表面导热层，所述表面导热层位于所述晶圆层的一侧，且与所述晶圆层连接；
    焊脚，所述焊脚位于所述晶圆层的另一侧，且与所述晶圆层连接；
    及封装层，所述封装层覆盖所述晶圆层、所述表面导热层和所述焊脚，所述表面导热层 和所述焊脚相对于所述封装层露出；
    所述表面导热层、所述晶圆层和所述焊脚形成所述第一导热结构的芯片的散热通道。
  19. 根据权利要求1至18中任一项所述的散热装置，其特征在于，所述第二导热结构包括芯片，所述第二导热结构的芯片设有散热通道，所述第二导热结构的芯片的散热通道连接于所述第三导热层和第二导热层之间。
  20. 根据权利要求1至19中任一项所述的散热装置，其特征在于，所述主发热器件为多媒体应用处理器件、系统级芯片、中央处理器、电源管理器件或射频放大器件。
  21. 根据权利要求1至20中任一项所述的散热装置，其特征在于，所述散热装置还包括柔性电路板，所述柔性电路板电连接于所述第一电路板与所述第二电路板之间。
  22. 一种电子设备，其特征在于，包括散热器和如权利要求1-21中任一项所述的散热装置，所述散热器与所述第一导热层连接。
  23. 根据权利要求22所述的电子设备，其特征在于，所述电子设备还包括传热件，所述传热件连接于所述散热器与所述第一导热层之间。
  24. 根据权利要求23所述的散热装置，其特征在于，沿所述第一电路板的厚度方向上，所述传热件与所述第一导热结构至少部分重叠。
  25. 根据权利要求23或24所述的散热装置，其特征在于，所述传热件包括传热块，或者，所述传热件包括封装器件，所述传热件的封装器件设有散热通道，所述传热件的封装器件的散热通道连接于所述散热器和所述第一导热层之间。
  26. 根据权利要求22至25中任一项所述的散热装置，其特征在于，所述散热装置还包括传热层，所述传热层采用焊料制成，或者，所述传热层采用热界面材料制成，或者，所述传热层采用导热胶制成；
    所述传热层有一层，所述传热层连接于所述传热件与所述第一导热层之间，或，所述传热层连接于所述传热件与所述散热器之间；
    或者，所述传热层有两层，一层所述传热层连接于所述传热件与所述第一导热层之间，另一层所述传热层连接于所述传热件与所述散热器之间。
  27. 根据权利要求22所述的电子设备，其特征在于，所述电子设备还包括辅助传热层，所述辅助传热层采用热界面材料制成，所述辅助传热层连接于所述散热器与所述第一导热层之间。
  28. 根据权利要求22至27中任一项所述的电子设备，其特征在于，所述散热器为中框、石墨膜、石墨烯膜、导热金属膜、热管散热器、蒸汽均温板散热器或风扇。
PCT/CN2021/134155 2020-11-30 2021-11-29 散热装置和电子设备 WO2022111709A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US18/254,737 US20240008167A1 (en) 2020-11-30 2021-11-29 Heat dissipation apparatus and electronic device
EP21897209.9A EP4236642A4 (en) 2020-11-30 2021-11-29 HEAT DISSIPATION DEVICE AND ELECTRONIC DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011373611.2A CN114585212B (zh) 2020-11-30 2020-11-30 散热装置和电子设备
CN202011373611.2 2020-11-30

Publications (1)

Publication Number Publication Date
WO2022111709A1 true WO2022111709A1 (zh) 2022-06-02

Family

ID=81754056

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/134155 WO2022111709A1 (zh) 2020-11-30 2021-11-29 散热装置和电子设备

Country Status (4)

Country Link
US (1) US20240008167A1 (zh)
EP (1) EP4236642A4 (zh)
CN (2) CN114585212B (zh)
WO (1) WO2022111709A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114823582A (zh) * 2022-07-01 2022-07-29 开平依利安达电子有限公司 一种多层印刷线路板芯片散热块封装结构
CN116033730A (zh) * 2023-03-27 2023-04-28 之江实验室 机箱及飞行设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023045290A (ja) * 2021-09-21 2023-04-03 キオクシア株式会社 記憶装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101930952A (zh) * 2009-06-17 2010-12-29 天津莱尔德电子材料有限公司 柔顺的多层导热界面组件和包含该组件的存储器模块
TW201146097A (en) * 2010-06-01 2011-12-16 Azotek Co Ltd Heat dissipating plate
CN107318236A (zh) * 2016-04-27 2017-11-03 佳邦科技股份有限公司 可携式电子产品以及用于可携式电子产品的散热式外壳结构
CN209643249U (zh) * 2019-01-14 2019-11-15 飞天诚信科技股份有限公司 一种双pcb板的散热结构
CN210959211U (zh) * 2019-06-06 2020-07-07 漳州市东方拓宇信息科技有限公司 一种移动终端设备用散热组件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215700A (ja) * 1988-07-04 1990-01-19 Mitsubishi Electric Corp 印刷配線板
US20020008963A1 (en) * 1999-07-15 2002-01-24 Dibene, Ii Joseph T. Inter-circuit encapsulated packaging
US6770967B2 (en) * 2002-12-23 2004-08-03 Eastman Kodak Company Remote thermal vias for densely packed electrical assemblage
JP4556174B2 (ja) * 2004-12-15 2010-10-06 日本電気株式会社 携帯端末機器及び放熱方法
JP2008140924A (ja) * 2006-11-30 2008-06-19 Toshiba Corp 電子機器
DE102009058914A1 (de) * 2009-12-17 2011-06-22 Conti Temic microelectronic GmbH, 90411 Leiterplatte mit mehreren übereinander angeordneten Leiterplattenlagen
US20120299173A1 (en) * 2011-05-26 2012-11-29 Futurewei Technologies, Inc. Thermally Enhanced Stacked Package and Method
US9807899B2 (en) * 2015-12-28 2017-10-31 Kabushiki Kaisha Toshiba Storage device
WO2018095233A1 (zh) * 2016-11-24 2018-05-31 苏州晶方半导体科技股份有限公司 半导体结构及其形成方法、封装结构及其形成方法
US10147664B2 (en) * 2017-04-24 2018-12-04 Xilinx, Inc. Dynamic mounting thermal management for devices on board
CN111447725B (zh) * 2020-03-25 2021-03-16 深圳捷飞高电路有限公司 一种应用于高精度盲孔电路板的散热结构及其工艺

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101930952A (zh) * 2009-06-17 2010-12-29 天津莱尔德电子材料有限公司 柔顺的多层导热界面组件和包含该组件的存储器模块
TW201146097A (en) * 2010-06-01 2011-12-16 Azotek Co Ltd Heat dissipating plate
CN107318236A (zh) * 2016-04-27 2017-11-03 佳邦科技股份有限公司 可携式电子产品以及用于可携式电子产品的散热式外壳结构
CN209643249U (zh) * 2019-01-14 2019-11-15 飞天诚信科技股份有限公司 一种双pcb板的散热结构
CN210959211U (zh) * 2019-06-06 2020-07-07 漳州市东方拓宇信息科技有限公司 一种移动终端设备用散热组件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4236642A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114823582A (zh) * 2022-07-01 2022-07-29 开平依利安达电子有限公司 一种多层印刷线路板芯片散热块封装结构
CN114823582B (zh) * 2022-07-01 2022-11-01 开平依利安达电子有限公司 一种多层印刷线路板芯片散热块封装结构
CN116033730A (zh) * 2023-03-27 2023-04-28 之江实验室 机箱及飞行设备

Also Published As

Publication number Publication date
CN114585212B (zh) 2024-05-17
EP4236642A4 (en) 2024-05-15
US20240008167A1 (en) 2024-01-04
CN114585212A (zh) 2022-06-03
CN118450670A (zh) 2024-08-06
EP4236642A1 (en) 2023-08-30

Similar Documents

Publication Publication Date Title
WO2022111709A1 (zh) 散热装置和电子设备
US10228735B2 (en) Methods of direct cooling of packaged devices and structures formed thereby
KR101751914B1 (ko) 전자 디바이스용 다층 열 방산 장치
US7433188B2 (en) Electronic package with direct cooling of active electronic components
CN100380657C (zh) 多配置处理器-存储设备
KR20190122133A (ko) 이방성 열 전도 섹션 및 등방성 열 전도 섹션을 갖는 방열 디바이스
US9595505B2 (en) Thermally-enhanced three dimensional system-in-packages and methods for the fabrication thereof
CN109087908A (zh) 封装结构、电子设备及封装方法
CN105099564B (zh) 封装结构及光模块
CN212517170U (zh) 一种芯片封装结构及电子设备
US11171118B2 (en) Semiconductor assemblies including thermal circuits and methods of manufacturing the same
WO2023071671A1 (zh) 一种芯片模组和电路板
US20230156900A1 (en) Processor Heat Dissipation in a Stacked PCB Configuration
JP2023507050A (ja) 積層ボトムダイの冷却を改善する熱伝導スラグ／アクティブダイ
TWI495423B (zh) 散熱模組及採用該散熱模組之電子裝置
JP2008153400A (ja) 回路基板、その製造方法及び半導体装置
TWI522032B (zh) 散熱模組
KR20180108109A (ko) 초박형 히트 파이프를 포함하는 온도조절모듈 및 이를 이용한 모바일 단말기
JPH1098287A (ja) 回路基板モジュールの冷却装置およびこの冷却装置を有する携帯形電子機器
CN207304709U (zh) 外接摄像组件及其盖板、底座以及外壳
CN113363164A (zh) 一种方体芯片封装方法及其封装结构
TWM500284U (zh) 可攜式電子裝置
WO2023189739A1 (ja) 情報処理装置及び回路モジュール
US20240098877A1 (en) Stack-pcb architecture with embedded vapor chamber
US11839054B1 (en) Stack-PCB design and midplane architecture

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21897209

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 18254737

Country of ref document: US

ENP Entry into the national phase

Ref document number: 2021897209

Country of ref document: EP

Effective date: 20230522

NENP Non-entry into the national phase

Ref country code: DE