WO2022105794A1 - 工艺腔室及半导体工艺设备 - Google Patents

工艺腔室及半导体工艺设备 Download PDF

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Publication number
WO2022105794A1
WO2022105794A1 PCT/CN2021/131205 CN2021131205W WO2022105794A1 WO 2022105794 A1 WO2022105794 A1 WO 2022105794A1 CN 2021131205 W CN2021131205 W CN 2021131205W WO 2022105794 A1 WO2022105794 A1 WO 2022105794A1
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WIPO (PCT)
Prior art keywords
chamber
process chamber
cantilever
base
base body
Prior art date
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PCT/CN2021/131205
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English (en)
French (fr)
Inventor
鲁艳成
韦刚
茅兴飞
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to JP2023530166A priority Critical patent/JP7421013B2/ja
Priority to KR1020237016739A priority patent/KR102643212B1/ko
Priority to US18/253,423 priority patent/US20230402265A1/en
Publication of WO2022105794A1 publication Critical patent/WO2022105794A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2005—Seal mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20207—Tilt

Definitions

  • the present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a process chamber and semiconductor process equipment.
  • plasma processing equipment is widely used in today's semiconductor, solar cell and flat panel display manufacturing processes.
  • the types of discharges that have been used in plasma processing equipment are capacitively coupled plasma (CCP) type, inductively coupled plasma (ICP) type, and electron cyclotron resonance plasma (ECR) type.
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma
  • ECR electron cyclotron resonance plasma
  • these discharge types are widely used in physical vapor deposition (Physical Vapour Deposition, PVD), plasma etching and chemical vapor deposition (Chemical Vapor Deposition, CVD), plasma immersion ion implantation (Plasma Immersion Ion Implantation, PIII) etc.
  • Semiconductor process equipment In order to ensure good uniformity of the etching results from the center to the edge of the wafer, the process environment requires the process chamber RF circuit of the semiconductor process equipment to have good uniformity, and also requires the process chamber temperature to have good uniformity.
  • the base is installed in the process chamber through a cantilever. Due to factors such as processing tolerances and assembly tolerances, there is a small gap between the cantilever and the chamber wall of the process chamber, resulting in electrical and thermal conductivity between the two. poor, resulting in lower wafer yield.
  • the present application proposes a process chamber and semiconductor process equipment, which are used to solve the problem of poor electrical conductivity and thermal conductivity between the base and the process chamber in the prior art, thereby causing wafer yield Less technical issues.
  • an embodiment of the present application provides a process chamber, which is applied to semiconductor process equipment, including: a chamber body, a base and a chuck assembly; a reaction chamber is formed in the chamber body, and the base is The seat is located in the reaction chamber, and the chuck assembly is connected to the base for carrying wafers;
  • the base includes a base body and a plurality of cantilevers, the plurality of cantilevers are spaced and evenly arranged along the circumference of the base body, and each cantilever is respectively connected to the inner wall of the chamber body and the the outer wall of the base body;
  • the chamber body, the base body and the cantilever are integrally formed and made of a material with electrical and thermal conductivity.
  • the base body has an accommodating cavity, and the accommodating cavity has an upward opening; a plurality of the cantilevers are provided with installations that communicate with the accommodating cavity. a channel, the chamber body is provided with a through hole, and the through hole communicates the installation channel with the outside of the chamber body;
  • the chuck assembly is sealingly connected with the base body to seal the opening of the accommodating cavity.
  • the installation channel has an upward opening on the cantilever, and the opening communicates with the accommodating cavity;
  • the chuck assembly is also sealingly connected to a plurality of the cantilevers for sealing the opening of the mounting channel.
  • the chuck assembly includes an interface disk, and the interface disk includes a disk main body and a plurality of cover plates connected thereto, wherein the disk main body is sealedly connected with the base body, to seal the opening of the accommodating cavity;
  • the number of the cover plates is the same as the number of the cantilevers, a plurality of the cover plates are spaced apart and evenly distributed around the disk main body, and each of the cover plates is in a one-to-one correspondence with each of the cantilevers in a sealed connection, to seal the opening of the mounting channel.
  • a positioning structure is provided between each of the cover plates and the corresponding cantilever arm, so as to limit the position of the cover plate on the cantilever arm.
  • each of the positioning structures includes at least a pair of mutually matched positioning recesses and positioning protrusions, and the positioning recesses are provided on two surfaces of the cover plate and the cantilever that are opposite to each other. on one of them; the positioning convex portion is arranged on the other of the two surfaces of the cover plate and the cantilever that are opposite to each other.
  • the base body includes a side wall and a bottom cover, the bottom cover is detachably disposed on the bottom of the side wall, the upper surface of the bottom cover and the bottom cover of the side wall are detachable.
  • the inner surface surrounds the accommodating cavity;
  • a maintenance port is provided on the chamber body at a position corresponding to the bottom cover, and the maintenance port communicates with the reaction chamber.
  • the diameter of the outer wall of the bottom cover gradually decreases along a vertical direction away from the side wall.
  • two connecting flanges are correspondingly disposed on the outer surface of the side wall and the bottom cover, and the two connecting flanges are stacked on each other in the vertical direction, and pass through the Multiple fasteners for fixed connection.
  • an embodiment of the present application provides a semiconductor process equipment, including a process chamber, a radio frequency component, an air intake component, and an exhaust component, and the process chamber adopts the process chamber provided in the first aspect, Both the radio frequency component and the air intake component are arranged on the top of the chamber body, and the exhaust component is arranged on the bottom of the chamber body.
  • the chamber body, the base body and the cantilever are made of the same material with electrical conductivity and thermal conductivity as an integrally formed structure, so that there is no gap between the cantilever and the chamber body , so that the electrical conductivity between the cantilever and the chamber body is better, thereby greatly improving the uniformity of the radio frequency circuit of the process chamber; in addition, it also improves the thermal conductivity of the chamber body to the cantilever, thereby greatly increasing the process chamber The overall temperature Uniformity, thereby greatly improving the yield of the wafer. Further, since the chamber body, the base body and the cantilever adopt an integral molding structure, this can not only improve the structural stability of the embodiment of the present application, but also greatly reduce application and maintenance costs.
  • the semiconductor process equipment provided by the embodiment of the present application by using the above-mentioned process chamber provided by the embodiment of the present application, can greatly improve the uniformity of the radio frequency circuit and the overall temperature uniformity of the process chamber, thereby greatly improving the yield of the wafer;
  • not only the structural stability of the embodiments of the present application can be improved, but also application and maintenance costs can be greatly reduced.
  • FIG. 1 is a schematic three-dimensional structural diagram of a process chamber omitting a chuck assembly provided by an embodiment of the present application;
  • FIG. 2 is a schematic three-dimensional structural diagram of a chuck assembly provided by an embodiment of the present application.
  • FIG. 3 is a schematic cross-sectional view of a process chamber provided by an embodiment of the present application.
  • FIG. 4 is a schematic top view of a process chamber according to an embodiment of the present application.
  • the embodiment of the present application provides a process chamber, which is applied to semiconductor process equipment.
  • the schematic structural diagrams of the process chamber are shown in FIGS. 1 and 3 , including: a chamber body 1 , a base 2 and a chuck assembly 3 ;
  • a reaction chamber 11 is formed in the chamber body 1, the base 2 is located in the reaction chamber 11, and the chuck assembly 3 is connected to the base 2 for carrying wafers (not shown in the figure);
  • the base 2 includes a base body 21 and a plurality of cantilevers 22, the plurality of cantilevers 22 are spaced and uniformly arranged along the circumference of the base body 21, and each cantilever 22 is respectively connected to the inner wall of the reaction chamber 11 and the outer wall of the base body 21, and the chamber body 1,
  • the base body 21 and the cantilever 22 are integrally formed and made of materials with electrical and thermal conductivity.
  • the chamber body 1 may specifically adopt a cubic structure made of metal material, and a hollow reaction chamber 11 is formed in the middle of the chamber body 1 for accommodating the base 2 and the chuck assembly 3 .
  • the top of the chamber body 1 may be provided with a cover (not shown in the figure), and the air extraction port 12 at the bottom may be connected to an exhaust assembly (not shown in the figure) of the semiconductor process equipment, and the exhaust assembly
  • the inside of the reaction chamber 11 can be pumped to make the reaction chamber 11 in a vacuum state, thereby providing a reaction environment for the wafer.
  • the base 2 and the chamber body 1 adopt an integral molding structure, and the base 2 and the chamber body 1 are made of the same material and are made of materials with electrical and thermal conductivity, such as metal materials.
  • the base body 21 is a cylindrical structure, and three cantilevers 22 are disposed on the outer periphery of the base body 21 .
  • Both the seat body 21 and the chamber body 1 are made by integral molding, and two ends of each cantilever 22 are respectively connected to the inner wall of the chamber body 1 and the outer wall of the base body 21 .
  • the overall structure of the chuck assembly 3 can be a disc-shaped structure, and the chuck assembly 3 is disposed on the top of the base body 21 for carrying and adsorbing wafers.
  • the chamber body, the base body and the cantilever are made of the same material with electrical conductivity and thermal conductivity as an integrally formed structure, so that there is no gap between the cantilever and the chamber body , so that the electrical conductivity between the cantilever and the chamber body is better, thereby greatly improving the uniformity of the radio frequency circuit of the process chamber; in addition, it also improves the thermal conductivity of the chamber body to the cantilever, thereby greatly increasing the process chamber The overall temperature Uniformity, thereby greatly improving the yield of the wafer. Further, since the chamber body, the base body and the cantilever are integrally formed, this not only improves the structural stability of the embodiment of the present application, but also greatly reduces application and maintenance costs.
  • the embodiments of the present application do not limit the specific implementation of the cantilever 22 and the chamber body 1 , for example, two or more cantilevers 22 may be used, and the chamber body 1 may also be a cylindrical structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
  • the base body 21 has an accommodating cavity 211 , and the accommodating cavity 211 has an upward opening; a plurality of cantilevers 22 are provided with accommodating cavities. 211 is connected to the installation channel 221, the chamber body 1 is provided with a through hole 13, the through hole 13 communicates the installation channel 221 with the outside of the chamber body 1; the chuck assembly 3 is sealed with the base body 21 for sealing The above-mentioned opening of the accommodating cavity 211 is accommodated.
  • the base body 21 is specifically a cylindrical structure, so that an accommodating cavity 211 is formed in the base body 21 .
  • Each cantilever 22 adopts, for example, a rectangular rod-shaped structure.
  • the cantilever 22 is a hollow structure to form an installation channel 221 .
  • the chamber body 1 is provided with a through hole 13 corresponding to the installation channel 221 in each cantilever 22 .
  • the through hole 13 may adopt a rectangular structure, and the cross-sectional dimension of the through hole 13 is the same as that of the installation channel 221 in the cantilever 22 .
  • the installation channel 221 can be used not only for arranging parts (not shown in the figure) such as cables, air pipes and water pipes connected inside and outside the chamber body 1, but also for installing some parts of suitable size, thereby greatly saving the external space of the chamber body 1 and the space occupied by the chamber body 1 .
  • the mounting channel 221 has an upward opening 222 on the cantilever 22 , and the opening 222 communicates with the accommodating cavity 211 ; the chuck assembly 3 is also connected to a plurality of The cantilever 22 is sealed and connected to seal the above-mentioned opening 222 of the installation channel 221 .
  • the chuck assembly 3 includes an interface plate 32 , and the interface plate 32 is sealed and disposed on the above-mentioned opening of the accommodating cavity 211 .
  • the interface plate 32 of the chuck assembly 3 can be a disk-shaped structure made of metal material, and the interface plate 32 can be covered on the top of the base body 21 to seal the opening of the accommodating cavity 211 .
  • the interface plate 32 and the base body 21 are connected in a detachable manner, thereby improving the disassembly and maintenance efficiency of the embodiment of the present application.
  • both the base body 21 and the cantilever 22 adopt a hollow structure, the manufacturing cost of the embodiment of the present application can also be greatly reduced.
  • the embodiment of the present application does not limit the specific shape of the cantilever 22 , for example, the cantilever 22 may also adopt a round rod-shaped structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
  • the interface disk 32 includes a disk main body 321 and a plurality of cover plates 322 connected thereto.
  • the number of cover plates 322 is the same as that of the cantilever 22, and the plurality of cover plates 322 are spaced and evenly distributed around the disk main body 321, and each cover plate 322 corresponds to each
  • the cantilever 22 is sealed and connected to seal the above-mentioned opening 222 of the installation channel 221 .
  • the disk main body 321 and the plurality of cover plates 322 are integrally formed.
  • the three cover plates 322 can be correspondingly covered on the three cantilevers 22 , so as to seal the above-mentioned openings 222 of the installation channels 221 of the three cantilevers 22 in a one-to-one correspondence. , so as to protect the components installed in the installation channel 221 of the cantilever 22 , so as to prevent the process chamber from causing corrosion to the components during the process, thereby greatly reducing the failure rate and improving the service life.
  • the opening 222 can be used to maintain the components installed in the base body 21 and the cantilever 22 by disassembling the interface plate 32 , thereby greatly improving the disassembly and maintenance efficiency of the embodiment of the present application.
  • the embodiment of the present application does not limit the specific number of the cover plates 322 , as long as the number of the cover plates 322 is set corresponding to the number of the cantilevers 22 . Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
  • the chuck assembly 3 includes an electrostatic chuck 31 .
  • the electrostatic chuck 31 is disposed on the disk main body 321 and is used for carrying wafers.
  • the electrostatic chuck 31 can specifically adopt a disc-shaped structure made of ceramic material.
  • the top surface of the electrostatic chuck 31 can be used to carry wafers, and the bottom surface of the electrostatic chuck 31 is connected to the disk body 321 . Fitting settings.
  • the disk main body 321 can be covered on the top of the base body 21 , and the disk main body 321 can be used to install the electrostatic chuck 31 and provide an interface for the electrodes and the back air of the electrostatic chuck 31 .
  • the diameter of the disc body 321 can be larger than that of the electrostatic chuck 31 to facilitate connection with the electrostatic chuck 31 and the base body 21 , and the connection can be detachable, thereby improving the disassembly and maintenance efficiency of the embodiment of the present application.
  • the embodiment of the present application does not limit the specific type of the chuck assembly 3 , and those skilled in the art can adjust the settings according to the actual situation.
  • each positioning structure 4 is provided between each cover plate 322 and the corresponding cantilever 22 to limit the position of the cover plate 322 on the cantilever 22 .
  • the positioning structure may have various structures.
  • each positioning structure 4 includes at least a pair of mutually matched positioning recesses and positioning protrusions, and the positioning recesses are provided in the two surfaces of the cover plate 322 and the cantilever 22 opposite to each other.
  • the positioning convex portion is disposed on the other of the two surfaces of the cover plate 322 and the cantilever 22 opposite to each other.
  • the positioning convex portion is, for example, a positioning column 41 provided on the top surface of the cantilever 22
  • the positioning recessed portion is, for example, a positioning hole (not shown in the figure) provided on the bottom surface of the cover plate 322 .
  • the holes cooperate with the positioning posts 41 to define the position of the cover plate 322 on the cantilever 22 .
  • the positioning structure 4 is used to position and install the interface plate 32 to the correct position. position.
  • the embodiments of the present application are not limited to this.
  • the positioning structure 4 may also adopt the manner of matching between bumps and grooves, and those skilled in the art can adjust the setting according to the actual situation.
  • the outer peripheral surfaces of the three cover plates 322 may adopt a curved surface structure, and the diameter of the curved surface structure is smaller than the inner diameter of the reaction chamber 11, and the difference between the two is about 2 mm (millimeters), for example.
  • Mechanical interference between the interface plate 32 and the inner wall of the reaction chamber 11 is avoided when the interface plate 32 is installed, thereby greatly improving the disassembly and maintenance efficiency of the embodiment of the present application, and also effectively reducing the failure rate of the embodiment of the present application.
  • the top surface of the cantilever 22 close to the side wall of the reaction chamber 11 is a closed structure, that is, the opening 222 is far from the side of the accommodating chamber 211 and the reaction chamber 11 .
  • There is a predetermined distance between the side walls and the predetermined distance may be 30 mm, and the wall thickness of the cantilever 22 may be set to about 20 mm.
  • the positioning column 41 may be disposed near the side wall of the reaction chamber 11 for positioning the position of the interface tray 32 .
  • the embodiments of the present application are not limited to the above, and those skilled in the art can adjust the settings by themselves according to the actual situation.
  • the base body 21 includes a side wall 35 and a bottom cover 34 , wherein the bottom cover 34 is detachably disposed at the bottom of the side wall 35 , and the bottom cover 34
  • the upper surface of the upper surface and the inner surface of the side wall 35 enclose the accommodating cavity 211;
  • the chamber body 1 is provided with a maintenance port 14 at the position corresponding to the bottom cover 34, and the maintenance port 14 is communicated with the reaction chamber 11 and is used for For maintenance of the bottom cover 34.
  • the bottom cover 34 is specifically a shell-like structure made of metal material.
  • the surface encloses the accommodating cavity 211 .
  • the bottom cover 34 is used to close the accommodating cavity 211, and various components can be installed in the accommodating cavity 211, such as a lift assembly (not shown in the figure), and the lift assembly can pass through the interface plate 32 and the electrostatic chuck 31 to be used for The wafer is driven to move up and down relative to the chuck assembly 3 , and the components in the accommodating cavity 211 can be easily maintained by removing the bottom cover 34 .
  • the bottom cover 34 and the side wall 35 can be specifically connected by flanges and bolts.
  • the bottom cover 34 and the side wall 35 may also be connected by means of screw connection or snap connection.
  • the bottom cover 34 and the side wall 35 adopt a detachable structure, so as to facilitate the maintenance of the lifting assembly, thereby greatly improving the efficiency of disassembly and maintenance.
  • the bottom cover 34 and the side wall 35 may adopt an integral molding structure, and the side wall 35 has openings for maintenance of various components. maintenance door structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the height setting by themselves according to the actual situation.
  • a rectangular maintenance port 14 may be opened on the side of the chamber body 1 , the length of the maintenance port 14 is greater than the diameter of the bottom cover 34 , and the height of the maintenance port 14 is greater than the thickness of the bottom cover 34 , so as to facilitate the disassembly and maintenance of the bottom cover 34 , thereby greatly improving the disassembly and maintenance efficiency of the embodiment of the present application.
  • the embodiment of the present application does not limit the specific position and shape of the maintenance port 14 , as long as the position of the maintenance port 14 corresponds to the position of the bottom cover 34 . Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves according to the actual situation.
  • the diameter of the outer wall of the bottom cover 34 gradually decreases along the vertical direction away from the side wall 35 .
  • the bottom cover 34 may have a conical conical structure with a large upper and a small lower, that is, the outer diameter of the bottom cover 34 gradually decreases in the direction from the top surface to the bottom surface.
  • the bottom cover 34 is designed with a conical cone, which facilitates the flow of the gas in the chamber body 1 to the lower air inlet 12 , thereby reducing the stability of the gas flow in the reaction chamber 11 and improving the yield of wafers.
  • the base 2 and the chamber body 1 are both made of aluminum alloy.
  • the chamber body 1 , the base body 21 and the cantilever 22 can all be made of aluminum alloy material. Due to the one-piece molding structure, the electrical conductivity between the three is excellent, and there is almost no space between the cantilevers 22 . Difference, the equivalent current of the radio frequency circuit can flow to the chamber body 1 through the three cantilevers 22 evenly distributed in the circumferential direction and be grounded, thereby improving the uniformity of the radio frequency circuit.
  • the number of cantilevers 22 can be three, the three cantilevers 22 are evenly arranged on the outer circumference of the base body 21, and the included angle between two adjacent cantilevers 22 is 120 degrees.
  • the heat conduction between the chamber body 1 and the cantilever 22 is excellent, and the chamber body 1 is conducted to the base body 21 through the three evenly distributed cantilever arms 22, which can not only reduce the temperature difference between the chamber body 1 and the base body 21, but also improve the base body 21. Temperature uniformity at body 21 .
  • the upper width of the plurality of cantilevers 22 on the cross section of the chamber body 1 may be 100-200 mm, but the embodiment of the present application is not limited to this. It is set according to the influence of the internal air flow state. Therefore, the specific specifications of the cantilever 22 are not limited in the embodiments of the present application, and those skilled in the art can adjust the settings according to the actual situation.
  • an embodiment of the present application provides a semiconductor process equipment, including a process chamber, a radio frequency component, an air intake component, and an exhaust component, wherein the process chamber adopts the process chamber provided by the above embodiments,
  • the radio frequency component and the air intake component are both arranged at the top of the chamber body, and the exhaust component is arranged at the bottom of the chamber body.
  • the semiconductor process equipment provided by the embodiment of the present application by using the above-mentioned process chamber provided by the embodiment of the present application, can greatly improve the uniformity of the radio frequency circuit and the overall temperature uniformity of the process chamber, thereby greatly improving the yield of the wafer;
  • not only the structural stability of the embodiments of the present application can be improved, but also application and maintenance costs can be greatly reduced.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as “first” or “second” may expressly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise specified, "plurality" means two or more.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements.
  • installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the internal communication of two elements.

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Abstract

本发明提供了一种工艺腔室及半导体工艺设备。该工艺腔室应用于半导体工艺设备，包括：腔室本体、基座及卡盘组件；腔室本体内形成有反应腔，基座位于反应腔内，卡盘组件与基座连接，用于承载晶圆；基座包括基座本体和多个悬臂，多个所述悬臂沿基座本体的周向间隔且均匀设置，且每个悬臂分别连接腔室本体的内壁和基座本体的外壁；腔室本体、基座本体和悬臂为一体成型结构，且由具有导电性和导热性的材质制成。本发明实现了大幅提高工艺腔室的射频回路均匀性及整体温度均匀性，进而大幅提高晶圆的良率。

Description

工艺腔室及半导体工艺设备 技术领域
本申请涉及半导体加工技术领域，具体而言，本申请涉及一种工艺腔室及半导体工艺设备。
背景技术
目前，等离子工艺设备广泛用于当今的半导体、太阳能电池及平板显示等制作工艺中。在目前的制造工艺中，已经使用等离子工艺设备的放电类型有电容耦合等离子体(CCP)类型、电感耦合等离子体(ICP)类型以及电子回旋共振等离子体(ECR)等类型。目前这些放电类型被广泛应用于物理气相沉积(Physical Vapour Deposition，PVD)、等离子体刻蚀及化学气相沉积(Chemical Vapor Deposition，CVD)、等离子体浸没离子注入(Plasma Immersion Ion Implantation，PIII)等的半导体工艺设备。为了保证晶圆中心到边缘的刻蚀结果有较好的一致性，工艺环境要求半导体工艺设备的工艺腔室射频回路具有良好的均匀性，也要求工艺腔室温度具有良好的均匀性。
但是现有技术中基座通过悬臂安装于工艺腔室内，由于加工公差和装配公差等因素，悬臂与工艺腔室的腔室壁之间具有微小间隙，造成两者之间的导电性能及热传导性能不佳，从而造成晶圆的良率较低。
发明内容
本申请针对现有方式的缺点，提出一种工艺腔室及半导体工艺设备，用以解决现有技术存在的基座与工艺腔室之间导电性能及热传导性能不佳，从而造成晶圆良率较低的技术问题。
第一个方面，本申请实施例提供了一种工艺腔室，应用于半导体工艺设 备，包括：腔室本体、基座及卡盘组件；所述腔室本体内形成有反应腔，所述基座位于所述反应腔内，所述卡盘组件与所述基座连接，用于承载晶圆；
所述基座包括基座本体和多个悬臂，多个所述悬臂沿所述基座本体的周向间隔且均匀设置，且每个所述悬臂分别连接所述腔室本体的内壁和所述基座本体的外壁；
所述腔室本体、所述基座本体和所述悬臂为一体成型结构，且由具有导电性和导热性的材质制成。
于本申请的一实施例中，所述基座本体内具有容置腔，所述容置腔具有朝上的敞口；多个所述悬臂内均设置有与所述容置腔连通的安装通道，所述腔室本体上开设有通孔，所述通孔将所述安装通道与所述腔室本体的外部连通；
所述卡盘组件与所述基座本体密封连接，用以密封所述容置腔的所述敞口。
于本申请的一实施例中，所述安装通道在所述悬臂上具有朝上的开口，所述开口与所述容置腔连通；
所述卡盘组件还与多个所述悬臂密封连接，用以密封所述安装通道的所述开口。
于本申请的一实施例中，所述卡盘组件包括接口盘，所述接口盘包括盘主体和与之连接的多个盖板，其中，所述盘主体与所述基座本体密封连接，用以密封所述容置腔的所述敞口；
所述盖板的数量与所述悬臂的数量相同，且多个所述盖板间隔且均匀分布在所述盘主体的周围，各个所述盖板一一对应地与各个所述悬臂密封连接，用以密封所述安装通道的所述开口。
于本申请的一实施例中，每个所述盖板和与之对应的所述悬臂之间设置有定位结构，用于限定所述盖板在所述悬臂上的位置。
于本申请的一实施例中，每个所述定位结构均包括至少一对相互配合的定位凹部和定位凸部，所述定位凹部设置于所述盖板与所述悬臂彼此相对的两个表面中的一者上；所述定位凸部设置于所述盖板与所述悬臂彼此相对的两个表面中的另一者上。
于本申请的一实施例中，所述基座本体包括侧壁和底盖，所述底盖可拆卸地设置于所述侧壁的底部，所述底盖的上表面和所述侧壁的内表面围成所述容置腔；
所述腔室本体上，且与所述底盖相对应的位置处设有维护口，所述维护口与所述反应腔连通。
于本申请的一实施例中，所述底盖的外壁的直径沿远离所述侧壁的竖直方向逐渐减小。
于本申请的一实施例中，在所述侧壁和所述底盖的外表面上对应设置有两个连接法兰，两个所述连接法兰在竖直方向上相互叠置，并通过多个紧固件固定连接。
第二个方面，本申请实施例提供了一种半导体工艺设备，包括工艺腔室、射频组件、进气组件和排气组件，所述工艺腔室采用如第一个方面提供的工艺腔室，所述射频组件和所述进气组件均设置于所述腔室本体的顶部，所述排气组件设置于所述腔室本体的底部。
本申请实施例提供的技术方案带来的有益技术效果是：
本申请实施例提供的工艺腔室，其腔室本体、基座本体及悬臂采用相同的具有导电性和导热性的材质制成的一体成型结构，这使得悬臂与腔室本体之间不存在缝隙，以使得悬臂和腔室本体之间的导电性能较佳，从而大幅提高工艺腔室的射频回路均匀性；另外还提高了腔室本体向悬臂的热传导性能，从而大幅提高工艺腔室的整体温度均匀性，进而大幅提高晶圆的良率。进一步的，由于腔室本体、基座本体及悬臂采用一体成型结构，这不仅能提高本 申请实施例的结构稳定性，而且还能大幅降低应用及维护成本。
本申请实施例提供的半导体工艺设备，其通过采用本申请实施例提供的上述工艺腔室，可以大幅提高工艺腔室的射频回路均匀性、整体温度均匀性，从而大幅提高晶圆的良率；另外，不仅可以提高本申请实施例的结构稳定性，而且还可以大幅降低应用及维护成本。
本申请附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为本申请实施例提供的一种工艺腔室省略卡盘组件的立体结构示意图；
图2为本申请实施例提供的一种卡盘组件的立体结构示意图；
图3为本申请实施例提供的一种工艺腔室的剖视示意图；
图4为本申请实施例提供的一种工艺腔室的俯视示意图。
具体实施方式
下面详细描述本申请，本申请的实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的部件或具有相同或类似功能的部件。此外，如果已知技术的详细描述对于示出的本申请的特征是不必要的，则将其省略。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能解释为对本申请的限制。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)，具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语，应该被 理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样被特定定义，否则不会用理想化或过于正式的含义来解释。
下面以具体地实施例对本申请的技术方案以及本申请的技术方案如何解决上述技术问题进行详细说明。
本申请实施例提供了一种工艺腔室，应用于半导体工艺设备，该工艺腔室的结构示意图如图1及图3所示，包括：腔室本体1、基座2及卡盘组件3；腔室本体1内形成有反应腔11，基座2位于反应腔11内，卡盘组件3与基座2连接，用于承载晶圆(图中未示出)；基座2包括基座本体21和多个悬臂22，多个悬臂22沿基座本体21的周向间隔且均匀设置，且每个悬臂22分别连接反应腔11的内壁和基座本体21的外壁，并且腔室本体1、基座本体21和悬臂22为一体成型结构，且由具有导电性和导热性的材质制成。
如图1及图3所示，腔室本体1具体可以采用金属材质制成的立方体结构，腔室本体1的中部形成中空的反应腔11，用于容置基座2及卡盘组件3。在实际应用中，腔室本体1的顶部可以设置有盖体(图中未示出)，底部的抽气口12可以与半导体工艺设备的排气组件(图中未示出)连接，排气组件可以对反应腔11内部进行抽气，以使反应腔11呈真空状态，从而为晶圆提供反应环境。
基座2与腔室本体1采用一体成型结构，而且，基座2和腔室本体1的材质相同，并且均采用具有导电性和导热性的材质制成，例如采用金属材质。具体来说，基座本体21具体为圆柱形结构，基座本体21的外周设置有三个悬臂22，三个悬臂22沿基座本体21的周向间隔且均匀分布，且三个悬臂22与基座本体21及腔室本体1均采用一体成型的方式制成，并且每个悬臂22的两端分别与腔室本体1的内壁及基座本体21的外壁连接。卡盘组件3整体结构可以采用圆盘形结构，卡盘组件3设置于基座本体21的顶部，以用于承载并吸附晶圆。
本申请实施例提供的工艺腔室，其腔室本体、基座本体及悬臂采用相同的具有导电性和导热性的材质制成的一体成型结构，这使得悬臂与腔室本体之间不存在缝隙，以使得悬臂和腔室本体之间的导电性能较佳，从而大幅提高工艺腔室的射频回路均匀性；另外还提高了腔室本体向悬臂的热传导性能，从而大幅提高工艺腔室的整体温度均匀性，进而大幅提高晶圆的良率。进一步的，由于腔室本体、基座本体和悬臂为一体成型结构，这不仅能提高本申请实施例的结构稳定性，而且还能大幅降低应用及维护成本。
需要说明的是，本申请实施例并不限定悬臂22及腔室本体1的具体实施方式，例如悬臂22可以采用两个或者三个以上，而腔室本体1也可以采用圆筒形结构。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1所示，基座本体21内具有容置腔211，该容置腔211具有朝上的敞口；多个悬臂22内均设置有与容置腔211连通的安装通道221，腔室本体1上开设有通孔13，该通孔13将安装通道221与腔室本体1的外部连通；卡盘组件3与基座本体21密封连接，用以密封容置腔211的上述敞口。
如图1所示，基座本体21具体为圆筒形结构，以使基座本体21内形成有容置腔211。各悬臂22例如采用矩形的杆状结构，悬臂22为中空结构以形成安装通道221，腔室本体1上设置有与各悬臂22内安装通道221对应的通孔13。通孔13具体可以采用矩形结构，并且通孔13的截面尺寸与悬臂22内的安装通道221尺寸相同。安装通道221既可用于设置腔室本体1内外连接的线缆、气管和水管等零部件(图中未示出)，也可以安装一些尺寸合适的零部件，从而大幅节约腔室本体1外部空间和以及腔室本体1的空间占用。
于本申请的一实施例中，如图1至图4所示，安装通道221在悬臂22上具有朝上的开口222，该开口222与容置腔211连通；卡盘组件3还与多 个悬臂22密封连接，用以密封安装通道221的上述开口222。
于本申请的一实施例中，卡盘组件3包括接口盘32，该接口盘32密封设置于容置腔211的上述敞口上。
卡盘组件3的接口盘32具体可以采用金属材质制成的圆盘形结构，接口盘32可以盖合于基座本体21顶部以密封容置腔211的敞口。接口盘32与基座本体21之间采用可拆卸方式连接，从而提高本申请实施例的拆装维护效率。另外，由于基座本体21及悬臂22均采用中空结构，还可以大幅节省本申请实施例的制造成本。
需要说明的是，本申请实施例并不限定悬臂22的具体形状，例如悬臂22也可以采用圆杆形结构。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1至图4所示，接口盘32包括盘主体321和与之连接的多个盖板322，其中，盘主体321与基座本体21密封连接，用以密封容置腔211的上述敞口；盖板322的数量与悬臂22的数量相同，且多个盖板322间隔且均匀分布在盘主体321的周围，各个盖板322一一对应地与各个悬臂22密封连接，用以密封安装通道221的上述开口222。
于本申请的一实施例中，盘主体321及多个盖板322为一体成型结构。
当接口盘32被装配至基座本体21上时，三个盖板322可对应盖合于三个悬臂22上，以用于一一对应地密封三个悬臂22的安装通道221的上述开口222，以保护悬臂22的安装通道221内安装的零部件，从而避免工艺腔室在执行工艺时对零部件造成腐蚀，进而大幅降低故障率及提高使用寿命。在实际应用时，拆开接口盘32即可以经由开口222，对基座本体21内及悬臂22内安装的零部件进行维护，从而大幅提高本申请实施例的拆装维护效率。
需要说明的是，本申请实施例并不限定盖板322的具体数量，只要盖板322的数量与悬臂22的数量对应设置即可。因此本申请实施例并不以此为限， 本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1至图4所示，卡盘组件3包括静电卡盘31，静电卡盘31设置于盘主体321上，用于承载晶圆。
如图1至图4所示，静电卡盘31具体可以采用陶瓷材质制成的圆盘形结构，静电卡盘31的顶面可以用于承载晶圆，静电卡盘31的底面与盘主体321贴合设置。盘主体321可以盖合于基座本体21顶部，盘主体321可以用于安装静电卡盘31，以及为静电卡盘31的电极及背气提供接口。盘主体321的直径可以大于静电卡盘31的直径，以便于与静电卡盘31及基座本体21连接，并且连接方式可以采用可拆卸方式连接，从而提高本申请实施例的拆装维护效率。但是需要说明的是，本申请实施例并不限定卡盘组件3的具体类型，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1至图3所示，每个盖板322和与之对应的悬臂22之间设置有定位结构4，用于限定盖板322在悬臂22上的位置。该定位结构可以有多种结构，例如，每个定位结构4均包括至少一对相互配合的定位凹部和定位凸部，该定位凹部设置于盖板322与悬臂22彼此相对的两个表面中的一者上；该定位凸部设置于于盖板322与悬臂22彼此相对的两个表面中的另一者上。具体地，如图1所示，上述定位凸部例如为设置于悬臂22顶面的定位柱41，上述定位凹部例如为设置于盖板322底面的定位孔(图中未示出)，该定位孔与定位柱41相配合，以限定盖板322在悬臂22上的位置。
如图1至图3所示，定位凹部和定位凸部具体可以为两对，分别位于两个悬臂22及两个盖板322之间，定位结构4用于将接口盘32定位安装到正确的位置上。但是本申请实施例并不以此为限，例如定位结构4还可以采用凸块与凹槽配合的方式，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，三个盖板322的外周面可以采用弧面结构，并 且弧面结构的直径小于反应腔11的内径，二者的差值例如为2mm(毫米)左右，以避免安装接口盘32时与反应腔11的内壁之间发生机械干涉，从而大幅提高本申请实施的拆装维护效率，并且还能有效降低本申请实施例的故障率。
另外，为了便于接口盘32与基座本体21之间的安装和密封，悬臂22的顶面靠近反应腔11侧壁处为封闭结构，即开口222远离容置腔211的侧边与反应腔11侧壁之间具有一预设距离，该预设距离具体可以为30mm，并且悬臂22的壁厚可以设置为20mm左右。定位柱41可以靠近反应腔11侧壁设置，以用于定位接口盘32的位置。但是本申请实施例并不以上为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1至图4所示，基座本体21包括侧壁35和底盖34，其中，底盖34可拆卸地设置于侧壁35的底部，底盖34的上表面和侧壁35的内表面围成容置腔211；腔室本体1上，且与底盖34相对应的位置处设有维护口14，该维护口14与反应腔11连通，用于对底盖34进行维护。
如图1至图4所示，底盖34具体采用金属材质制成的壳状结构，底盖34的顶面与侧壁35的底面连接，并且底盖34的上表面和侧壁35的内表面围成容置腔211。底盖34用于封闭容置腔211，容置腔211内可安装多种部件，例如升降组件(图中未示出)，该升降组件可以穿过接口盘32及静电卡盘31，用于带动晶圆相对于卡盘组件3升降，通过拆卸底盖34可方便维修容置腔211内的部件。底盖34和侧壁35具体可以通过法兰及螺栓配合连接，具体地，在侧壁35和底盖34的外表面上对应设置有两个连接法兰(351,341)，两个连接法兰(351,341)在竖直方向上相互叠置，并通过多个紧固件(图中未示出)固定连接。但是本申请实施例并不以此为限，例如底盖34与侧壁35之间还可以采用螺接或者卡接等方式连接。底盖34与侧壁35采用可拆卸 式结构，以便于对升降组件进行维护，从而大幅提高拆装维护效率。
需要说明的是，本申请实施例并非所有实施例都必须包括有底盖34，例如底盖34可以与侧壁35之间采用一体成型结构，并且在侧壁35上开设有用于维护各零部件的维护门结构。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整高度设置。腔室本体1的侧面可开设有矩形的维护口14，该维护口14的长度大于底盖34的直径，并且维护口14的高度大于底盖34的厚度，以便于底盖34的拆装维护，从而大幅提高本申请实施例的拆装维护效率。
需要说明的是，本申请实施例并不限定维护口14的具体位置及形状，只要维护口14所在位置与底盖34的位置对应设置即可。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图3所示，底盖34的外壁的直径沿远离侧壁35的竖直方向逐渐减小。具体来说，底盖34具体可以为上大下小的锥形圆台结构，即底盖34外径自顶面至底面的方向上逐渐减小。采用上述设计，由于底盖34采用锥形圆台设计，以利于腔室本体1内的气体向下方的抽气口12流动，从而降低反应腔11内的气流稳定性，进而提高晶圆的良率。
于本申请的一实施例中，如图1所示，基座2及腔室本体1均为铝合金材质制成。具体来说，腔室本体1、基座本体21及悬臂22均可以采用铝合金材质制成，由于采用一体成型结构使得三者之间的导电性能优良，并且由于多个悬臂22之间几乎没有差异性，射频回路的等效电流可通过周向均布地由三个悬臂22流向腔室本体1并接地，从而提高了射频回路的均匀性。悬臂22的数量具体可以为三个，三个悬臂22均匀排布于基座本体21的外周，并且两相邻悬臂22之间的夹角为120度，由于腔室本体1、基座本体21及悬臂22之间的热传导优良，腔室本体1通过三个均布地悬臂22传导至基座本体21，不但可减小腔室本体1与基座本体21的温度差异，而且还可提高基 座本体21处的温度均匀性。另外，多个悬臂22在腔室本体1横截面的上宽度可以为100-200mm，但是本申请实施例并不以此为限，悬臂22的宽度具体可以根据悬臂22的数量以及对反应腔11内气流状态的影响而设定。因此本申请实施例对于悬臂22的具体规格并不限定，本领域技术人员可以根据实际情况自行调整设置。
基于同一发明构思，本申请实施例提供了一种半导体工艺设备，包括工艺腔室、射频组件、进气组件和排气组件，其中，工艺腔室采用如上述各实施例提供的工艺腔室，射频组件和进气组件均设置于腔室本体的顶部，排气组件设置于腔室本体的底部。
应用本申请实施例，至少能够实现如下有益效果：
本申请实施例提供的半导体工艺设备，其通过采用本申请实施例提供的上述工艺腔室，可以大幅提高工艺腔室的射频回路均匀性、整体温度均匀性，从而大幅提高晶圆的良率；另外，不仅可以提高本申请实施例的结构稳定性，而且还可以大幅降低应用及维护成本。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。
在本申请的描述中，需要理解的是，术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第 二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
在本说明书的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述仅是本申请的部分实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (10)

  1. 一种工艺腔室，应用于半导体工艺设备，其特征在于，包括腔室本体、基座及卡盘组件；
    所述腔室本体内形成有反应腔，所述基座位于所述反应腔内，所述卡盘组件与所述基座连接，用于承载晶圆；
    所述基座包括基座本体和多个悬臂，多个所述悬臂沿所述基座本体的周向间隔且均匀设置，且每个所述悬臂分别连接所述腔室本体的内壁和所述基座本体的外壁；
    所述腔室本体、所述基座本体和所述悬臂为一体成型结构，且由具有导电性和导热性的材质制成。
  2. 如权利要求1所述的工艺腔室，其特征在于，所述基座本体内具有容置腔，所述容置腔具有朝上的敞口；多个所述悬臂内均设置有与所述容置腔连通的安装通道，所述腔室本体上开设有通孔，所述通孔将所述安装通道与所述腔室本体的外部连通；
    所述卡盘组件与所述基座本体密封连接，用以密封所述容置腔的所述敞口。
  3. 如权利要求2所述的工艺腔室，其特征在于，所述安装通道在所述悬臂上具有朝上的开口，所述开口与所述容置腔连通；
    所述卡盘组件还与多个所述悬臂密封连接，用以密封所述安装通道的所述开口。
  4. 如权利要求3所述的工艺腔室，其特征在于，所述卡盘组件包括接口盘，所述接口盘包括盘主体和与之连接的多个盖板，其中，所述盘主体与所述基座本体密封连接，用以密封所述容置腔的所述敞口；
    所述盖板的数量与所述悬臂的数量相同，且多个所述盖板间隔且均匀分布在所述盘主体的周围，各个所述盖板一一对应地与各个所述悬臂密封连接，用以密封所述安装通道的所述开口。
  5. 如权利要求3所述的工艺腔室，其特征在于，每个所述盖板和与之对应的所述悬臂之间设置有定位结构，用于限定所述盖板在所述悬臂上的位置。
  6. 如权利要求5所述的工艺腔室，其特征在于，每个所述定位结构均包括至少一对相互配合的定位凹部和定位凸部，所述定位凹部设置于所述盖板与所述悬臂彼此相对的两个表面中的一者上；所述定位凸部设置于所述盖板与所述悬臂彼此相对的两个表面中的另一者上。
  7. 如权利要求2所述的工艺腔室，其特征在于，所述基座本体包括侧壁和底盖，所述底盖可拆卸地设置于所述侧壁的底部，所述底盖的上表面和所述侧壁的内表面围成所述容置腔；
    所述腔室本体上，且与所述底盖相对应的位置处设有维护口，所述维护口与所述反应腔连通。
  8. 如权利要求7所述的工艺腔室，其特征在于，所述底盖的外壁的直径沿远离所述侧壁的竖直方向逐渐减小。
  9. 如权利要求7所述的工艺腔室，其特征在于，在所述侧壁和所述底盖的外表面上对应设置有两个连接法兰，两个所述连接法兰在竖直方向上相互叠置，并通过多个紧固件固定连接。
  10. 一种半导体工艺设备，包括工艺腔室、射频组件、进气组件和排气 组件，其特征在于，所述工艺腔室采用如权利要求1至9中任一项所述的工艺腔室，所述射频组件和所述进气组件均设置于所述腔室本体的顶部，所述排气组件设置于所述腔室本体的底部。
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