Classifications

• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B19/00—Other methods of shaping glass
  • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
  • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
  • C03B5/02—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
  • C03B5/025—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by arc discharge or plasma heating
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
  • C30B15/10—Crucibles or containers for supporting the melt
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B35/002—Crucibles or containers
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
  • C03B2201/00—Type of glass produced
  • C03B2201/02—Pure silica glass, e.g. pure fused quartz

Definitions

• the present invention is generally related to manufacture of quartz hollow cylinders and more, specifically fabrication of quartz hollow cylinder with reduced bubbles using atmospheric control.
• Hollow cylinders of silica (SiO2) glass are used for semiconductor wafer processing.
• Semiconductor materials are placed inside the cylinder during some processing steps, such as masking, deposition, and etching. Due to the aggressive nature of the etch processes, for example, the etch chamber materials are selected to withstand harsh environments to promote reliable wafer processing. Therefore, the innermost etch chamber components are typically fabricated from quartz glass. Etching of pure quartz glass theoretically results in liberation of only silicon and oxygen species. These are less harmful to the wafer, as compared to transition metals and other elements, which may modify the composition and, therefore the semiconducting properties, of the wafer.
• a cylinder body of the furnace includes ports with porous plugs on the outside of the cylinder body.
• the ports are fluidly connected to manifolds so that a vacuum can be drawn in the space between the sand grains after the inner surface is fused.
• the two or more sets of ports are fluidly connected respectively to two or more manifolds so that vacuum may be applied to some of the ports and a high diffusivity gas, such as helium, hydrogen, mixtures thereof, etc., may be introduced into the other ports.
• the flow of the high diffusivity gas may promote the flow of the gas species that cause bubbles to the vacuum ports.
• the apparatus and system provides a system in which gases that lead to bubble formation may be evacuated from the sand bed prior to fusion.
• This system and method for fabricating hollow quartz cylinders facilitates production of a quartz material that can be used in semiconductor wafer processing application, such as the etching step, by reducing bubbles formed while fusing the quartz.
• the apparatus and system allow for control of the atmosphere and conditions within the cylinder body where the quartz is formed.
• Prior systems for forming cylindrical quartz tubes did not allow for control of the atmosphere.
• the atmosphere within the sand bed was fixed.
• the present apparatus and system allow for controlling the atmosphere through a series of ports on the rotating cylinder through which a vacuum can be applied and/or process gases can be introduced. In this manner, conditions can be created within the cylinder that will either prevent bubble formation or result in the reduction of bubble size and/or promote bubbles to escape the glass during processing.
• a horizontal rotating arc furnace comprising: a housing defining an interior configured to receive particles for forming quartz or ceramic body and electrodes that generate a plasma arc, the housing including a plurality of first ports on an exterior of the housing fluidly connected to the interior and supply pipes fluidly coupled to the first ports; supports mechanically coupling the housing to a drive system to provide rotational motion to the housing; and a rotary union coupled to the housing, the rotary union including second ports to fluidly connect to a vacuum supply, the second ports fluidly connected to at least some of the first ports via the supply pipes, wherein the horizontal rotating arc furnace is configured to apply a vacuum to the interior of the housing via the first ports when the housing is rotating.
• the plurality of first ports comprise a first set of first ports and a second set of first ports
• the supply pipes comprise a first set of supply pipes and a second set of supply pipes
• the rotary union is a first rotary union
• the horizontal rotating arc furnace further comprises a second rotary union coupled to the housing opposite the first rotary union, the second rotary union including third ports to fluidly connect to a gas supply, the third ports fluidly connected to the second set of first ports via the second set of supply pipes, wherein the second ports are fluidly connected to the first set of first ports via the first set of supply pipes.
• the gas supply supplies a high diffusivity gas.
• the high diffusivity gas is a mixture of helium and oxygen that is at least 80% helium by weight.
• the gas supply is configured to supply a high diffusivity gas to the second set of first ports simultaneously with the vacuum supply applying the vacuum to the first set of first ports.
• the horizontal rotating arc furnace further comprises: an axial extension coupled to each end of the housing, wherein the axial extensions rotates with the housing, wherein at least one axial extension is fluidly coupled to the rotary union, and configured to fluidly couple the rotary union to supply pipes, and wherein the rotary union provides a seal between the vacuum source and the at least one axial extension.
• the housing includes a cylinder body in which the particles and the electrodes are received, wherein the axial extensions extend radially away from the cylinder body, and wherein the at least one axial extension interfaces with the drive system within one of the supports to provide rotational force to the housing.
• the housing includes a cylinder body in which the particles and the electrodes are received, wherein the first ports that are spaced about the cylinder body to supply the vacuum to an interior of the cylinder body while remaining balanced to facilitate rotation of the cylinder body.
• the first ports each include a plug sufficient to allow a vacuum to be drawn from or the high diffusivity gas to be introduced in the housing and prevent the particles from entering the first ports.
• the plugs are formed from a porous material having a porosity sufficient to allow a vacuum to be drawn from the housing while preventing the silica particles from entering the first ports.
• a method of forming a quartz or ceramic body comprising: supplying quartz or ceramic particles to the horizontal rotating arc furnace of any of the previous embodiments; and while rotating the housing: providing heat to fuse at least a portion of the particles into a quartz or ceramic body, and applying a vacuum between an interior wall of the housing and an exterior wall of the quartz or ceramic body via the plurality of first ports on the housing.
• the particles are quartz particles
• the method comprises forming a quartz body.
• a method for forming a silica glass body comprising: supplying silica particles into an interior of a hollow cylinder body of a horizontal rotating arc furnace; and while rotating the hollow cylinder body: providing heat to fuse at least a portion of the silica particles into the silica glass body, and applying a vacuum between an interior wall of the hollow cylinder body and an exterior wall of the silica glass body via a first set of one or more ports on the cylindrical hollow body.
• the method comprises, while rotating the hollow cylinder body, supplying a process gas to the interior of the cylinder via a second set of one or more ports on the cylindrical hollow body.
• applying the vacuum and supplying the process gas are performed simultaneously.
• process gas is a high diffusivity gas.
• the process gas is a mixture of helium and oxygen that is at least 80% helium by weight.
• the method further comprises, while rotating the hollow cylinder body, supplying a process gas to the interior of the cylinder via a second set of one or more ports on the cylindrical hollow body at a first time, wherein applying the vacuum occurs at a second time, and the second time occurs subsequent to the first time.
• the method further comprises, while rotating the hollow cylinder body, supplying a post-process gas to the interior of the cylinder via the second set of one or more ports at a third time, the third time being after the first time
• FIG. 1 is a perspective view of a rotating arc furnace with ports in accordance with teachings of this disclosure.
• FIG. 2 is a perspective view of a rotating arc furnace assembly in accordance with the teachings of this disclosure.
• the words “example” and “exemplary” mean an instance, or illustration. The words “example” or “exemplary” do not indicate a key or preferred aspect or embodiment.
• the word “or” is intended to be inclusive rather an exclusive, unless context suggests otherwise.
• the phrase “A employs B or C,” includes any inclusive permutation (e.g., A employs B; A employs C; or A employs both B and C).
• the articles “a” and “an” are generally intended to mean “one or more” unless context suggests otherwise.
• Semiconductor wafer processing for microchip fabrication requires, among other steps, sequential and repeated steps such as masking, deposition, and etching.
• the wafer and the chamber in which the etching takes place are exposed to an aggressive environment (e.g., the environments for reactive ion etching and plasma etching, etc.).
• the innermost etch chamber components are fabricated from quartz glass so that etching results in liberation of only silicon and oxygen species. These are less harmful to the wafer, as compared to transition metals and other elements, which would modify the composition and therefore the semiconducting properties of the wafer.
• quartz components should (i) be as chemically pure as possible (e.g., having less than 50 parts per million by weight (ppmw) total impurities), and (ii) have a very low concentration of bulk defects (e.g., foreign material inclusions and bubbles, etc.).
• bulk defects e.g., foreign material inclusions and bubbles, etc.
• Such bulk defects when exposed to the etching atmosphere can cause inhomogeneous etching that generates quartz glass particles.
• Loose particulate matter within the etch chamber may block gates and destroy conductive vias on the wafer or contaminate the wafer with impurity elements.
• a system and method are described to reduce bubbles in quartz hollow cylinders by controlling the atmosphere within a cylinder body of a rotating arc furnace.
• a cylinder body of the furnace includes ports with porous plugs on the outside of the cylinder body.
• the ports are fluidly connected to manifolds so that a vacuum can be drawn in the space between the sand grains after the inner surface of the sand bed is fused.
• the two or more sets of ports are fluidly connected respectively to two or more manifolds.
• vacuum is applied to one set of ports and high diffusivity gasses, such as helium or hydrogen, etc., are introduced into the other set of ports.
• the ports are flush to the interior of the cylindrical body and include a membrane or filter that allows gas to flow and/or vacuum to be applied without letting sand to enter the ports.
• the ports are distributed on the cylinder body in a balanced manner to facilitate rotation of the cylinder body.
• FIGS. 1 and 2 are perspective views of a rotating arc furnace 100 with ports 102 to facilitate controlling gas in a sand bed (e.g., silica particles).
• the rotating arc furnace 100 is a horizontal rotating arc furnace in which silica is fused into hollow quartz cylinders. While the rotating arc furnace 100 is shown as using plasma arc heating, other suitable heating methods, such as resistance heating, etc., may be used.
• the rotating arc furnace 100 includes a housing 104 that is supported by supports 106. In the illustrated example, the rotating arc furnace 100 is mounted on a machine bed 108 via the supports 106.
• the housing 104 includes a hollow cylinder body 110 and furnace flanges 112.
• the cylinder body 110 includes the ports 102 that are spaced about the cylinder body 110 to supply a vacuum and/or high diffusivity gas to the interior of the cylinder body 110 while remaining balanced to facilitate spinning of the cylinder body 110.
• the ports 102 are flush with the interior of the cylinder body 110.
• the ports 102 may each include a plug sufficient to allow a vacuum to be drawn from or the high diffusivity gas to be introduced in the cylinder where plugs prevent or hinder silica particles from entering the ports 102 during the process.
• the plugs may be formed from a porous material having a porosity sufficient to satisfy these objectives with respect to gas flow and prevention of silica particles escaping the tube and clogging the ports.
• the material for the plug is not particularly limited and can be selected as desired.
• the plug is made from refractory materials, alloys, steel or stainless steel.
• ports 102 facilitate introduction of a gas into the interior of the cylinder body 110 (e.g., in the space between interior of the cylinder body 110 and the fused hollow quartz cylinder).
• Each of the furnace flanges 112 includes a flange body 113, a refractory 114 that supports the cylinder body 110, and an axial extension 116 that interfaces with a drive system 118 within the corresponding one of the supports 106.
• Each refractory 114 extends radially into the interior of the cylinder body 110.
• the outer diameter of the refractories 114 is configured to fit the inner diameter of the cylinder body 110.
• Each refractory 114 defines a hole along a horizontal central axis though which electrodes 119 and/or silica particles may be introduced.
• the axial extensions 116 extend radially away from the cylinder body 110 to interface with the drive system 118 within the corresponding one of the supports 106 to provide rotational force to the housing 104.
• the axial extensions 116 define a hole that is coaxial with the hole defined by the respective refractories 114 to provide access to the interior of the cylinder body 110 to the electrodes 119 and/or silica particles.
• Each of the axial extensions 116 is coupled of to a rotary union 120 that provides a seal between a stationary gas supply and/or vacuum source and the rotating axial extension 116.
• the rotary unions 120 include supply ports 122.
• one rotary union 116 may be fluidly coupled to a vacuum source and the other one of the rotary unions 116 may be fluidly coupled to one or more gas supplies.
• the axial extension 116 is fluidly coupled to the corresponding rotary union 120 and is configured to fluidly couple the rotary union 120 to supply pipes 124 that fluidly couple the axial extension 116 to the flange body 113.
• the flange body 113 defines passages corresponding to the supply pipes 124 such that the flange body 113 is fluidly connected to the vacuum source and/or the one or more gas supplies via the corresponding axial extension 116 and the corresponding rotary union 120.
• the passages defined in the flange body 113 are fluidly coupled to the ports 102 to supply vacuum and/or or gas to the interior of the cylinder body 110. In such a manner, vacuum may applied to the radially outer side of molten silica forming into the hollow quartz cylinder while the housing 104 is spinning to promote any bubbles that form in the molten silica to leave via the radially outer side of molten silica.
• FIG. 2 illustrates the rotating arc furnace 100 within an assembly housing 200.
• a feed system e.g., a pneumatic feed system, etc.
• An arc system 206 provides the electrodes 119 to the interior of the rotating arc furnace 100.
• a plasma arc is established between the electrodes 119 to provide heat to fuse the silica particles into fused quartz.
• the hoppers 202 and the arc system 206 are on platforms 208 movable on tracks 210.
• the platforms 208 and the tracks 210 are configured to move to interchange whether the feed tubes 204 or the electrodes 119 are in the interior of the rotating arc furnace 100. In some examples, one or more of platforms 208 move perpendicular to the tracks to interchange whether the feed tubes 204 or the electrodes 119 are in the interior of the rotating arc furnace 100.
• silica particles are introduced into the interior of the rotating cylinder body 110 (e.g., via the hoppers 202 and the feed tubes 204, etc.).
• the electrodes 119 are introduced into the interior of the cylinder body 110.
• ahigh diffusivity gas e.g., helium, hydrogen, a mixture of helium and oxygen that is at least 80% helium by weight, etc.
• the housing 104 rotates, causing the silica particles to the inner wall of the cylinder body 110. An arc is generated between the electrodes 119.
• the electrodes 119 are then moved apart to their operating positions with the plasma arc between them.
• the arc heats the silica particles, gradually converting it to a molten (fused) state.
• the layer of silica particles closest to the arc melts first, with the melt front gradually extending outward, toward the inner wall of the cylinder body 110.
• a vacuum is drawn in the remaining sand layer.
• a thin layer of unmolten silica particles remains between the molten silica and the inner wall of the cylinder body 110, which remains in the unmolten state throughout the rest of the processing.
• a high diffusivity gas is introduced into the interior of the cylinder body 110 (sometimes referred to as a “postprocessing gas”) such that some ports 102 are applying the vacuum and some ports are 102 supplying the post-processing gas.
• the post-processing gas may be a different gas or mixture of gasses than the processing gas. In such examples, flow of the high diffusivity gasses may promote the flow of the gas species that cause bubbles to the vacuum ports.
• the assembly housing 200 includes an adjustable wall 212.
• the adjustable wall 212 and the corresponding support 106 may be horizontally adjusted to accommodate hollow cylinder bodies 110 of different lengths and/or different port configurations. In such a manner, one hollow cylinder body 110 of one length may be removed and replaces it with a hollow cylinder body 110 of a different length.
• the apparatus with the cylinder comprising the ports allows for control of the environment within the system.
• the various process conditions with respect to the vacuum applied to the system and/or flowing a processing gas through the system via the ports can be selected as desired for a particular purpose or intended application.
• the present system and apparatus allow for simultaneously pulling a vacuum at different locations along the length of the rotating cylinder including at opposite ends of the cylinder.
• the system is configured to simultaneously pull a vacuum within the system and introduce a process gas into the system.
• the introduction of process gas(es) and pulling a vacuum occur at separate times.
• the apparatus and system also allow for introducing different process gases at selected times.
• helium is introduced as a process gas for a selected period of time, and once the silica begins to glass over, the flow of helium is stopped, and argon is introduced into the system.
• the system with the various ports allows for the introduction of mixture of process gases at a ratio as desired such as by controlling the flow rate of the respective gases through the ports.
• the number of ports provided on the cylinder is generally not limited and can be selected as desired for a particular purpose or to provide particular conditions or properties within the cylinder.
• the number of ports may affect how the atmosphere within the system can be controlled. A greater number of ports allows for more options in controlling/creating the atmosphere within the cylinder. For example, the number and location of the ports will contribute to where the vacuum is applied, or the process gases are introduced within the cylinder. By increasing the number of ports per unit area, for example, it may allow for a certain level vacuum to be applied across the length of the cylinder and the bed of silica.
• the ports along a first half of the length are connected to apply a vacuum to the system, and the ports along a second half of the length of the cylinder are connected to supply a process gas.
• the pressure or flow rate of the gas can be controlled as desired.
• the apparatus and methods described herein are suitable for forming tubes useful in a variety of applications including, but not limited to the semiconductor industry.
• the apparatus and system can be employed to make quartz glass cylinders of a selected thickness.
• the quartz cylinders can have a thickness of from about 1 cm to about 10 cm and an outer diameter of from about 15 cm to about 50 cm.
• the type and nature of the starting feed material employed in the process can be selected as desired for a particular purpose or intended application.
• the starting material is a silica (SiO2) sand.
• the silica (SiO?) used in the glass compositions of the present embodiments can be synthetic sand, natural sand, or a mixture thereof.
• the amount of SiOz in die glass composition ranges from about 82 to about 99.9999%.
• the amount of SiOzin the glass composition ranges from about 92 to about 99.9999%; from about 96 to about 99.9999 wt. %; from about 97 to about 99.9999 wt. %; even from about 98 to about 99 wt. %.
• ranges can be combined to form new and non-specified ranges.
• the feed material may also include recycled or broke glass materials (which are also known as and referred to as cullet).
• Ceramic materials can include alumina, zirconia, barium oxide, silicon carbide, silicon nitride, boron nitride, beryllium oxide, titania, calcium oxide, magnesium oxide, combinations of two or more thereof, and the like.
• Glass-ceramics may include a mixture of ceramic and silica particles.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
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• Organic Chemistry (AREA)
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• Crystallography & Structural Chemistry (AREA)
• Metallurgy (AREA)
• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• Glass Melting And Manufacturing (AREA)
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• Muffle Furnaces And Rotary Kilns (AREA)

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• 2021
  • 2021-11-16 US US18/036,791 patent/US12384712B2/en active Active
  • 2021-11-16 KR KR1020237020159A patent/KR20230115304A/ko active Pending
  • 2021-11-16 JP JP2023528608A patent/JP2023549526A/ja active Pending
  • 2021-11-16 EP EP21824196.6A patent/EP4244193A1/en active Pending
  • 2021-11-16 CN CN202180090877.2A patent/CN116783149A/zh active Pending
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