JP5519145B2 - 等温、低圧プラズマ堆積技術を用いる光ファイバ製造方法 - Google Patents
等温、低圧プラズマ堆積技術を用いる光ファイバ製造方法 Download PDFInfo
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- JP5519145B2 JP5519145B2 JP2008313821A JP2008313821A JP5519145B2 JP 5519145 B2 JP5519145 B2 JP 5519145B2 JP 2008313821 A JP2008313821 A JP 2008313821A JP 2008313821 A JP2008313821 A JP 2008313821A JP 5519145 B2 JP5519145 B2 JP 5519145B2
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- 230000008021 deposition Effects 0.000 title claims description 59
- 239000013307 optical fiber Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000151 deposition Methods 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 33
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 238000011144 upstream manufacturing Methods 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 21
- 239000000376 reactant Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 230000005672 electromagnetic field Effects 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 239000006227 byproduct Substances 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 1
- 238000005201 scrubbing Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 11
- 239000004071 soot Substances 0.000 description 9
- 238000005253 cladding Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000006060 molten glass Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
- C03B37/01815—Reactant deposition burners or deposition heating means
- C03B37/01823—Plasma deposition burners or heating means
- C03B37/0183—Plasma deposition burners or heating means for plasma within a tube substrate
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01846—Means for after-treatment or catching of worked reactant gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
- Chemical Vapour Deposition (AREA)
Description
12 シリカ管
14 化学物質供給システム
16 第一の封止部
18 第二の封止部
20 真空排気システム
22 スクラバ
30 等温プラズマ発生器
32 共振コイル
34 RF信号源
40 堆積区間
Claims (17)
- 基材管の内壁に物質を堆積するプロセスであって、
プラズマ発生器の共振コイル内にシリカの基材管を配する段階と、
前記基材管の第一の端である供給端を通して少なくとも一つの化学反応物質を送り込む段階と、
前記基材管の内圧を大気圧よりも低く維持する段階と、
前記基材管内にイオンと電子が同じ温度の等温プラズマを生成するために共振コイルにエネルギーを供給して、前記基材管の内壁を加熱する段階と、
前記生成された等温プラズマの上流の狭い区間内の前記基材管の内壁に、前記少なくとも一つの化学反応物質の反応生成物を堆積する段階であって、前記等温プラズマ内には堆積は生じず、前記狭い区間は前記基材管の長さの1%以下である、堆積する段階と、
を含むプロセス。 - 前記狭い区間が長さで1cm以下の範囲に限定されるように堆積条件が制御されることを特徴とする請求項1に記載のプロセス。
- 前記プロセスがさらに、
前記基材管の第二の端である排気端に結合された真空システムを通して反応副生成物を排出する段階をさらに含むことを特徴とする請求項1に記載のプロセス。 - 前記プロセスがさらに、
前記反応副生成物を除去し中和するために、排出された前記反応副生成物を気体洗浄する段階を含むことを特徴とする請求項3に記載のプロセス。 - 堆積を遂行するときに、前記狭い区間の長さが、プラズマ発生器のパワー、基材管の内圧、基材管の内径、基材管の壁厚、基材管の外部加熱、化学反応物質の組成、化学反応物質の流速、等温プラズマの横移動速度、等温プラズマの横移動長さ、および共振コイルからなる群から選択される一つ以上のパラメータによって制御されることを特徴とする請求項1に記載のプロセス。
- 前記プロセスがさらに、光ファイバコア棒を形成するために、
前記基材管を加熱する段階と、
加熱された前記基材管を縮径することによって前記光ファイバコア棒を形成する段階と、
を含むことを特徴とする請求項1に記載のプロセス。 - 等温低圧堆積装置であって、
基材管と、
共振コイルと、
共振コイルに結合されたRF発生器とを含み、前記共振コイルが前記基材管の一部を取り囲むように配され、前記共振コイルが前記基材管の内部に電磁場を生成し、そして前記共振コイルと前記基材管とがそれらの間で横移動をもたらすように設定されており、さらに、
前記電磁場と相互作用して前記基材管内でイオンと電子が同じ温度の等温プラズマを生成するよう選択された化学反応物質を、第一の端部を通して前記基材管の中に導入する化学反応物質供給システムと、
前記基材管内部を減圧状態に維持し、前記生成された等温プラズマの上流に少なくとも一つの前記化学反応物質の反応生成物の狭い堆積区間を生成する真空ベースの排気システムとを含み、前記等温プラズマ内には堆積は生じず、前記狭い堆積区間は前記基材管の長さの1%以下である、
を含む装置。 - 前記基材管に前記化学反応物質供給システムを結合する第一の回転型封止部と、前記真空ベースの排気システムを前記基材管に結合する第二の回転型封止部とをさらに含むことを特徴とする請求項7に記載の装置。
- 前記共振コイルは、前記基材管の中の小さな容積に電磁場を形成する収束型コイルを含むことを特徴とする請求項7に記載の装置。
- 光ファイバプリフォーム製造装置であって、
基材管の上流側に反応物質を導入する反応物質供給システムと、
前記基材管内部を減圧状態に維持する圧力制御システムと、
導入される前記反応物質が等温プラズマの上流の狭い区間内の前記基材管の内壁に堆積すべく、前記基材管の内部にイオンと電子が同じ温度の等温プラズマの場を発生するよう構成された共振コイルとを含み、前記等温プラズマ内には堆積は生じず、前記狭い区間は前記基材管の長さの1%以下である、
を含む装置。 - 前記共振コイルは、小さな容積を占めるべく形成された電磁場を生成するよう構成された収束型コイルを含むことを特徴とする請求項10に記載の装置。
- 光ファイバプリフォームを製造するプロセスであって、
基材管の上流側端部を通して反応物質を導入する段階と、
前記基材管の内部の減圧状態を維持する段階と、
減圧状態で前記基材管の内部にイオンと電子が同じ温度の等温プラズマの場を発生させる段階と、
前記等温プラズマの場を用いて反応を生じさせる段階とを含み、前記反応が前記等温プラズマの場の上流側に生じ、前記等温プラズマ内には反応は生じず、前記上流側の反応を生じさせる区間は前記基材管の長さの1%以下である、プロセス。 - 反応の結果として、前記反応物質から堆積物質を生成する段階と、
前記基材管の内側表面に前記堆積物質を堆積する段階とをさらに含み、前記堆積が前記等温プラズマの場の上流側に生じる、
ことを特徴とする請求項12に記載のプロセス。 - 構成部材に物質を堆積するプロセスであって、
少なくとも一つの反応物質を堆積室に送り込む段階と、
前記堆積室内の内圧を大気圧よりも低く維持する段階と、
前記構成部材の近傍にイオンと電子が同じ温度の等温プラズマを生成するためにプラズマ発生器の共振コイルにエネルギーを供給し、前記構成部材を加熱する段階と、
前記生成された等温プラズマの上流の狭い区間内の前記構成部材の表面に前記少なくとも一つの化学反応物質の反応生成物を堆積する段階であって、前記等温プラズマ内には堆積は生じず、前記狭い区間は前記構成部材の長さの1%以下である、堆積する段階と、
を含むプロセス。 - 前記構成部材がシリカ物質からなることを特徴とする請求項14のプロセス。
- 前記構成部材が基材からなることを特徴とする請求項14のプロセス。
- 前記構成部材がコア棒からなることを特徴とする請求項14のプロセス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/001,174 US8252387B2 (en) | 2007-12-10 | 2007-12-10 | Method of fabricating optical fiber using an isothermal, low pressure plasma deposition technique |
US12/001174 | 2007-12-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009137837A JP2009137837A (ja) | 2009-06-25 |
JP5519145B2 true JP5519145B2 (ja) | 2014-06-11 |
Family
ID=40451185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008313821A Expired - Fee Related JP5519145B2 (ja) | 2007-12-10 | 2008-12-10 | 等温、低圧プラズマ堆積技術を用いる光ファイバ製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8252387B2 (ja) |
EP (1) | EP2070885B8 (ja) |
JP (1) | JP5519145B2 (ja) |
CN (1) | CN101580341B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8252387B2 (en) * | 2007-12-10 | 2012-08-28 | Ofs Fitel, Llc | Method of fabricating optical fiber using an isothermal, low pressure plasma deposition technique |
US9002162B2 (en) * | 2013-03-15 | 2015-04-07 | Ofs Fitel, Llc | Large core multimode optical fibers |
US20160023939A1 (en) * | 2014-07-24 | 2016-01-28 | Ofs Fitel, Llc | Isothermal plasma cvd system for reduced taper in optical fiber preforms |
CN110629200B (zh) * | 2019-09-20 | 2020-04-10 | 理想晶延半导体设备(上海)有限公司 | 半导体处理设备 |
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US8857372B2 (en) * | 2007-12-10 | 2014-10-14 | Ofs Fitel, Llc | Method of fabricating optical fiber using an isothermal, low pressure plasma deposition technique |
US9002162B2 (en) * | 2013-03-15 | 2015-04-07 | Ofs Fitel, Llc | Large core multimode optical fibers |
-
2007
- 2007-12-10 US US12/001,174 patent/US8252387B2/en active Active
-
2008
- 2008-12-05 EP EP08021208.7A patent/EP2070885B8/en not_active Ceased
- 2008-12-09 CN CN200810183834.5A patent/CN101580341B/zh not_active Expired - Fee Related
- 2008-12-10 JP JP2008313821A patent/JP5519145B2/ja not_active Expired - Fee Related
-
2012
- 2012-07-26 US US13/559,016 patent/US20120285202A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US8252387B2 (en) | 2012-08-28 |
EP2070885B8 (en) | 2017-05-24 |
US20090148613A1 (en) | 2009-06-11 |
JP2009137837A (ja) | 2009-06-25 |
CN101580341A (zh) | 2009-11-18 |
EP2070885B1 (en) | 2017-02-15 |
CN101580341B (zh) | 2013-08-14 |
EP2070885A3 (en) | 2012-09-19 |
EP2070885A2 (en) | 2009-06-17 |
US20120285202A1 (en) | 2012-11-15 |
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