WO2022102228A1 - 接合装置 - Google Patents
接合装置 Download PDFInfo
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- WO2022102228A1 WO2022102228A1 PCT/JP2021/032690 JP2021032690W WO2022102228A1 WO 2022102228 A1 WO2022102228 A1 WO 2022102228A1 JP 2021032690 W JP2021032690 W JP 2021032690W WO 2022102228 A1 WO2022102228 A1 WO 2022102228A1
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- WIPO (PCT)
- Prior art keywords
- joining
- metal layer
- targets
- diaphragm
- laser light
- Prior art date
Links
- 238000005304 joining Methods 0.000 title claims abstract description 180
- 239000002184 metal Substances 0.000 claims abstract description 150
- 229910052751 metal Inorganic materials 0.000 claims abstract description 150
- 230000007246 mechanism Effects 0.000 claims abstract description 60
- 238000003825 pressing Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000470 constituent Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/021—Isostatic pressure welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/32—Bonding taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/32—Bonding taking account of the properties of the material involved
- B23K26/324—Bonding taking account of the properties of the material involved involving non-metallic parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0426—Fixtures for other work
- B23K37/0435—Clamps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0461—Welding tables
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/002—Apparatus for assembling MEMS, e.g. micromanipulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
Definitions
- the present invention relates to a joining technique using laser light.
- MEMS semiconductor devices
- a technique for joining two wafers by utilizing the eutectic reaction of two kinds of metals there is a technique for joining two wafers by utilizing the eutectic reaction of two kinds of metals.
- a metal layer containing one of the two types of metals that cause an eutectic reaction as a main component and a metal layer containing the other metal as a main component are formed. It is formed on the bonding surface of each of the two wafers, and the two wafers are bonded by utilizing the eutectic reaction generated by the contact and heating of the metal layers.
- this technique is used to encapsulate sensors (gyro sensors, biosensors, etc.), waveguides, etc. within devices.
- the sensors that can be sealed in the device by the technique are limited to those having high heat resistance.
- Patent Document 2 a technique for locally heating a contact point between two metal layers using a laser beam has been proposed (see Patent Document 2). Specifically, this technique pressurizes two upper and lower wafers placed on the bonding stage with a quartz plate (that is, presses the two wafers between the bonding stage and the quartz plate), and in that state, 2 By irradiating the contact points of the two metal layers with laser light via a quartz plate, a eutectic reaction is caused at the contact points.
- the contact point between the two metal layers is locally heated, so that the thermal effect on the sensor is reduced, and as a result, a sensor having low heat resistance is used as a device. It becomes possible to seal inside. Further, since the joining portion of the two metal layers can be intensively heated by the laser beam, the temperature of the joining portion can be rapidly raised to the temperature at which the eutectic reaction occurs, and as a result, the time required for the joining process can be increased. Can be shortened.
- the above-mentioned bonding technique using laser light is effective not only for bonding using eutectic reaction (eutectic bonding) but also for various bonding requiring local heating such as solder bonding and welding bonding. be.
- the quartz plate needs to be designed to be thick so as to have a strength that can withstand the pressure at the time of joining (that is, so that it does not crack during the pressure).
- an object of the present invention is to reduce the pressure required to bring two kinds of metals into contact with each other without a gap in the joining technique using laser light.
- the joining device joins the two joining targets by joining the first metal layer and the second metal layer formed on the joining surfaces of the two joining targets by joining using a laser beam.
- It is a device for joining surfaces, and includes a table, a pressurizing mechanism, a laser light source that emits laser light, and a control unit.
- the table has transparency to laser light
- two joining targets are placed on the table in a state where the first metal layer and the second metal layer face each other.
- the pressurizing mechanism has a diaphragm, and is a mechanism capable of applying pressure to the back surface of the object to be joined by the diaphragm from the side opposite to the table.
- control unit brings the first metal layer and the second metal layer into contact with each other by applying pressure to the back surface of the joining object with a diaphragm while the two joining objects are placed on the table. While maintaining the state, the contact point between the first metal layer and the second metal layer is irradiated with the laser beam through the table.
- the diaphragm when pressure is applied to the back surface of the joining target, the diaphragm can flexibly change according to the shape of the back surface, so that uniform pressure can be applied in close contact with the back surface of the joining target.
- the pressure can be used to deform the object to be joined.
- the diaphragm can continue to apply uniform pressure to the back surface by following the change in the shape of the back surface due to the deformation of the object to be joined. Therefore, by applying a uniform pressure to the back surface of the object to be bonded by the diaphragm, the object to be bonded is deformed so that there is no gap between the first metal layer and the second metal layer even if the pressure is relatively small. However, the state can be maintained.
- the first metal layer and the second metal layer can be brought into contact with each other in a wide range without gaps. Then, by irradiating the contact point between the first metal layer and the second metal layer with a laser beam in that state, the first metal layer and the second metal layer are bonded to each other in a wide range by using the laser beam. Can be combined.
- the pressure required to bring two kinds of metals into contact without a gap can be reduced.
- FIG. 1 is a conceptual diagram illustrating two joining objects to be joined by a joining device.
- FIG. 2A is a cross-sectional view showing an example when the first metal layer and the second metal layer are patterned
- FIG. 2B is a plan view showing the example.
- FIG. 3 is a conceptual diagram showing the joining device according to the first embodiment.
- FIG. 4 is a conceptual diagram showing a modified example of the joining device according to the first embodiment.
- FIG. 5 is a conceptual diagram showing the joining device according to the second embodiment.
- FIG. 1 is a conceptual diagram illustrating two joining targets 101 and 102 to be joined by the joining device described below.
- the bonding targets 101 and 102 are, for example, semiconductor wafers, and the first metal layer 201 and the second metal layer 202 are formed on the bonding surfaces 101a and 102a, respectively.
- the first metal layer 201 is a layer containing one of the two types of metals that cause an eutectic reaction as a main component
- the second metal layer 202 contains the other metal as a main component. It is a layer that contains.
- a combination of two kinds of metals for example, a combination of aluminum (Al) and germanium (Ge), a combination of copper (Cu) and tin (Sn), a combination of silver (Ag) and tin (Sn), indium (In).
- Al aluminum
- Ge germanium
- Cu copper
- Sn tin
- Ag silver
- Sn silver
- In indium
- tin (Sn) and tin (Sn) can be mentioned.
- these layers are not particularly limited, but are formed by vapor deposition or coating of a metal on the joint surfaces 101a and 102a.
- FIG. 1 schematically shows a case where the first metal layer 201 is formed over the entire surface of the joint surface 101a and the second metal layer 202 is formed over the entire area of the joint surface 101a, but an actual semiconductor is shown.
- the first metal layer 201 and the second metal layer 202 are patterned into various shapes according to the shape and application of the device.
- 2 (A) and 2 (B) are a cross-sectional view and a plan view showing an example of the pattern shape of the first metal layer 201 and the second metal layer 202. Note that FIG. 2B is a plan view of only the first metal layer 201.
- the first metal layer 201 and the second metal layer 202 are formed in a rectangular frame shape surrounding each sensor 103 so that each sensor 103 can be sealed in the device. ..
- the pattern shapes of the first metal layer 201 and the second metal layer 202 are not limited to the quadrangular frame shape, and can be appropriately changed according to the shape and application of the device.
- the joining device described below performs a eutectic reaction (that is, eutectic joining using a laser beam) caused by heating a contact point between the first metal layer 201 and the second metal layer 202 with a laser beam.
- a eutectic reaction that is, eutectic joining using a laser beam
- FIG. 3 is a conceptual diagram showing a joining device according to the first embodiment.
- the joining device of the present embodiment includes a chamber mechanism 1, a pressurizing mechanism 2, a laser light source 3, and a control unit 9A.
- the configuration of each part will be specifically described.
- the chamber mechanism 1 includes a first chamber component 11, a second chamber component 12, a drive unit 13, and an exhaust unit 14.
- the first chamber component 11 and the second chamber component 12 are portions that form a closed space (hereinafter referred to as “chamber 10”) for performing a joining process, and are relatively close to each other in the vertical direction. It is configured so that the formation and opening of the chamber 10 can be selectively realized.
- the first chamber constituent portion 11 is horizontally and without a gap inward with the first cylindrical portion 111 arranged in a state where the central axial direction coincides with the vertical direction and the first cylindrical portion 111. It is composed of a supported table 112 and.
- the table 112 is a table having transparency to laser light, and the two joining targets 101 and 102 are in a state where the first metal layer 201 and the second metal layer 202 are opposed to each other (FIGS. 1 and 12). 2 (see)) is the part to be placed.
- the table 112 is a table made of quartz.
- the second chamber component 12 includes a second cylindrical portion 121 arranged coaxially with the first cylindrical portion 111 above the first cylindrical portion 111, and a top plate 122 that closes the upper end of the second cylindrical portion 121. Consists of ,. Then, the upper end of the first cylindrical portion 111 and the lower end of the second cylindrical portion 121 come into contact with each other without a gap, so that the chamber 10 is formed between the table 112 and the top plate 122.
- the drive unit 13 is a portion in which at least one of the first chamber component 11 and the second chamber component 12 is moved in the vertical direction so that the components are relatively close to each other.
- the exhaust unit 14 is a portion of the chamber 10 that lowers the air pressure in the chamber 10 until the inside of the chamber 10 (specifically, the space between the diaphragm 21 and the table 112, which will be described later) is in a vacuum state. be.
- An air pressure adjusting device such as a vacuum pump is used for the exhaust unit 14.
- the chamber mechanism 1 may further include a gas supply unit for supplying a gas for processing (argon (Ar) gas or the like) into the chamber 10.
- the pressurizing mechanism 2 has a diaphragm 21 and is a mechanism capable of applying pressure to the back surface 102b of the joining target 102 with the diaphragm 21 from the side opposite to the table 112.
- the pressurizing mechanism 2 includes a diaphragm 21 and a driving unit 22 for operating the diaphragm 21. Specifically, it is as follows.
- the diaphragm 21 has a second cylindrical portion so as to come into contact with the back surface 102b of the upper joining target 102 of the two joining targets 101 and 102 placed on the table 112 when the chamber 10 is formed. It is supported inside the 121 without any gaps.
- the drive unit 22 operates the diaphragm 21 by transmitting pressure to the diaphragm 21 using the pressure medium 221. More specifically, the pressure medium 221 is filled between the diaphragm 21 and the top plate 122 in the second chamber component 12, and the drive unit 22 changes the pressure applied to the pressure medium 221. Then, the diaphragm 21 is operated via the pressure medium 221.
- the pressure medium 221 may be a liquid or a gas.
- the laser light source 3 is a portion that emits a laser beam.
- the laser light source 3 is arranged below the table 112, and the first metal layer 201 and the second metal layer are arranged while irradiating the laser beam toward the bonding targets 101 and 102 on the table 112. It is possible to scan the laser beam in the horizontal plane along the pattern shape of 202. Further, the laser light source 3 can focus the laser beam on the contact point between the first metal layer 201 and the second metal layer 202.
- the control unit 9A is composed of a processing device such as a CPU (Central Processing Unit) and a microcomputer, and controls various operating units (chamber mechanism 1, pressurizing mechanism 2, laser light source 3, etc.) included in the joining device. .. Specifically, it is as follows.
- the control unit 9A brings the first chamber constituent unit 11 and the second chamber constituent unit 12 into close proximity to each other in a state where the two joining targets 101 and 102 are placed on the table 112. Form the chamber 10. Then, the control unit 9A controls the exhaust unit 14 until the inside of the chamber 10 (specifically, the space between the diaphragm 21 and the table 112 in the chamber 10) becomes a vacuum state. Decrease the air pressure in 10. Further, the control unit 9A supplies a processing gas (argon (Ar) gas or the like) into the chamber 10 as needed.
- argon (Ar) gas or the like argon (Ar) gas or the like
- control unit 9A applies pressure to the back surface 102b of the joining target 102 by the diaphragm 21 by controlling the pressurizing mechanism 2.
- the diaphragm 21 when pressure is applied to the back surface 102b of the joining target 102, the diaphragm 21 can flexibly change according to the shape of the back surface 102b, so that the diaphragm 21 is in close contact with the back surface 102b of the joining target 102 and uniformly applies pressure.
- the pressure can be used to deform (including elastic deformation) the joining target 102.
- the diaphragm 21 can continue to apply uniform pressure to the back surface 102b by following the shape change of the back surface 102b due to the deformation of the back surface 102b.
- the diaphragm 21 by applying a uniform pressure to the back surface 102b of the joining target 102 by the diaphragm 21, even if the pressure is relatively small, there is no gap between the first metal layer 201 and the second metal layer 202. The state can be maintained while the joining target 102 is deformed. Therefore, even with a relatively small pressure, the first metal layer 201 and the second metal layer 202 can be brought into contact with each other in a wide range without gaps. That is, by pressurizing with the diaphragm 21, the pressure required to bring the first metal layer 201 and the second metal layer 202 into contact with each other without a gap can be reduced.
- the objects to be bonded 101 and 102 are wafers having a diameter of 200 mm
- a load of 3 to 6 tons is required when the wafers are pressed on the press plane as in Patent Document 2, but the load is 2 tons or less by pressurizing with the diaphragm 21.
- the load can be reduced to.
- the control unit 9A maintains that state while maintaining the state.
- the contact point between the first metal layer 201 and the second metal layer 202 is irradiated with the laser beam via the table 112.
- the control unit 9A scans the laser beam in the horizontal plane along the pattern shapes of the first metal layer 201 and the second metal layer 202.
- the first metal layer 201 and the second metal layer 202 can be bonded by eutectic bonding in the entire area of the bonding target 101 and 102. In this way, the joining surfaces 101a and 102a of the two joining targets 101 and 102 are joined together.
- the required pressure can be reduced, so that the strength required for the table 112 (strength that can withstand the pressurization at the time of joining) is also reduced, and as a result, the table 112 It is possible to make the thickness of the table relatively small.
- FIG. 4 is a conceptual diagram showing a modification of the joining device according to the first embodiment.
- the joining device may further include a heater 4 for heating the joining targets 101 and 102.
- the heater 4 includes a heat exchange unit 41 made of a material having high heat conductivity (aluminum (Al) or the like), a heat medium 42 that gives heat to the heat exchange unit 41, and the heat medium 42. It is a heat exchanger composed of a temperature adjusting unit 43 for adjusting the temperature of the above.
- the heater 4 is arranged on the side opposite to the table 112 with respect to the diaphragm 21.
- the heat exchange unit 41 is installed on the inner surface of the top plate 122, and the heat medium 42 circulates between the heat exchange unit 41 and the temperature control unit 43 through the holes provided in the top plate 122. Will be done.
- the pressure medium 221 is interposed between the heat exchange unit 41 and the diaphragm 21, and heat exchange is performed between the heat exchange unit 41 and the diaphragm 21 via the pressure medium 221. .. That is, the heat of the heater 4 is transferred to the diaphragm 21 via the pressure medium 221.
- the control unit 9A controls the temperature adjusting unit 43 to be joined via the heat exchange unit 41.
- the 101 and 102 are heated.
- the control unit 9A heats the joining targets 101 and 102 at a temperature lower than the temperature required for eutectic joining (eutectic temperature).
- the temperature range of the contact point between the first metal layer 201 and the second metal layer 202 can be reduced by the amount of the temperature rised by the heating by the heater 4.
- the temperature required for eutectic bonding is about 450 ° C.
- the heating by the heater 4 is for alleviating the distortion of the joining targets 101 and 102 that occurs at the time of joining (specifically, the deformation of the joining target 102 due to the pressurization by the diaphragm 21 remains as it is in the joining). It can also be used for annealing treatment.
- the pressure medium 221 is a liquid rather than a gas. This is because the liquid has a higher thermal conductivity than the gas, so that the efficiency of heat exchange between the heat exchange unit 41 and the diaphragm 21 via the pressure medium 221 is increased, and as a result, the heat of the heater 4 is transferred to the diaphragm. This is because it is easy to be transmitted to 21.
- the heat medium 42 is preferably constant temperature water adjusted to a predetermined temperature (for example, 90 ° C.) by the temperature adjusting unit 43. This is because the constant temperature water makes it possible to keep the temperature of the heat exchange unit 41 constant, so that not only the bonding targets 101 and 102 are auxiliary heated, but also the temperature of the bonding targets 101 and 102 is heated by the laser beam. If they rise too much, they can be cooled (prevention of overheating).
- the joining device described in the first embodiment is a device that does not have a chuck mechanism for individually holding the joining targets 101 and 102 and an alignment mechanism for adjusting their positional relationship. .. Therefore, the two joining targets 101 and 102 are overlapped by adjusting the positional relationship by another device before joining by the joining device, and then transferred and placed on the table 112. However, when the two joining targets 101 and 102 are simply transported in a state of being overlapped with each other, the adjusted positional relationship between the joining targets 101 and 102 may be disrupted due to vibration or the like generated during the transport.
- the positional relationship between the two joining targets 101 and 102 is adjusted, and the positional relationship after the adjustment is tentatively maintained.
- Another joining device that performs both joining will be described.
- the temporary bonding is performed by bonding the first metal layer 201 and the second metal layer 202 at several points by using eutectic bonding using laser light.
- FIG. 5 is a conceptual diagram showing the joining device according to the second embodiment.
- the joining device of the present embodiment includes a chuck mechanism 5, an alignment mechanism 6, a pressurizing mechanism 7, a laser light source 8, and a control unit 9B.
- the configuration of each part will be specifically described.
- the chuck mechanism 5 has a first chuck portion 51 and a second chuck portion 52.
- the first chuck portion 51 is a table having a suction surface 51a for sucking the back surface 101b of one of the two joining targets 101 and 102, and the suction groove 51b covers the entire area of the suction surface 51a. Is formed. Then, the bonding target 101 is placed on the suction surface 51a with the back surface 101b facing down, and in that state, the air pressure in the suction groove 51b is lowered by vacuum suction or the like to lower the back surface 101b of the bonding target 101 on the suction surface. It can be adsorbed on 51a.
- through holes 51c through which laser light is passed are formed at a plurality of locations (for example, five locations; three of which are shown in FIG. 5). Further, a quartz block 511 for correcting the spherical aberration of the laser beam is embedded in each through hole 51c.
- the second chuck portion 52 has a suction surface 52a that sucks the back surface 102b of the other joining target 102 of the two joining targets 101 and 102, and the suction surface 52a faces the suction surface 51a of the first chuck portion 51. It is arranged in a state where it is made to.
- the second chuck portion 52 has a base body 521 as a base thereof, and each of the portions of the lower surface 521a of the base body 521 facing the through hole 51c is the pressurizing mechanism 7. It is composed of the pressure contact surface 71a of the above. Further, a suction groove 52b is formed on the pressure contact surface 71a. More specifically, it is as follows.
- the pressure mechanism 7 has a pressure contact portion 71 having a pressure contact surface 71a and a drive unit 72.
- a pressure contact portion 71 is provided at each of the portions of the second chuck portion 52 facing the through hole 51c. Further, the pressure contact portion 71 is provided so as to be able to move in a direction perpendicular to the lower surface 521a of the base body 521 (here, in the vertical direction), and the pressure contact surface 71a is downward from the lower surface 521a of the base body 521. It is possible to move to a protruding position that protrudes to.
- the drive unit 72 is, for example, an air cylinder, which enables pressurization of an object in contact with the pressure contact surface 71a. In the present embodiment, the drive unit 72 moves the pressure contact portion 71 to the protruding position by urging the pressure contact portion 71 downward.
- the pressure contact surface 71a is brought into contact with the back surface 102b of the joining target 102, and the back surface 102b of the joining target 102 is attracted to the pressure contact surface 71a by reducing the air pressure in the suction groove 52b by vacuum suction or the like.
- the suction surface 52a of the second chuck portion 52 is configured by the pressure contact surface 71a provided with the suction groove 52b.
- the holding (adsorption) of the two joining targets 101 and 102 to the first chuck portion 51 and the second chuck portion 52 is performed as follows. Before adsorbing the joining target 101 on the first chuck portion 51, first, the joining target 102 is placed on the first chuck portion 51 with its back surface 102b facing upward. Then, by moving at least one of the first chuck portion 51 and the second chuck portion 52 in the vertical direction (for example, by lowering the second chuck portion 52), the pressure contact surface 71a (suction surface 52a) is moved.
- the back surface 102b of the bonding target 102 is attracted to the pressure contact surface 71a by contacting the back surface 102b of the bonding target 102 and lowering the air pressure in the suction groove 52b by vacuum suction or the like. After that, the first chuck portion 51 and the second chuck portion 52 are separated from each other (for example, the second chuck portion 52 is raised), and then the joining target 101 is attracted to the first chuck portion 51.
- the positional relationship between the two joining targets 101 and 102 is adjusted by the alignment mechanism 6 described below. Then, by moving at least one of the first chuck portion 51 and the second chuck portion 52 in the vertical direction (for example, by lowering the second chuck portion 52), the two joining targets 101 and 102 (specifically). The first metal layer 201 and the second metal layer 202) are brought into contact with each other.
- pressure can be applied locally overlapping the through hole 51c in the back surface 102b of the joining target 102 adsorbed on the second chuck portion 52.
- the first metal layer 201 and the second metal layer 202 can be brought into contact with each other without a gap at the local location.
- the alignment mechanism 6 sets the positional relationship between the two joining targets 101 and 102 in a state where the two joining targets 101 and 102 are held (adsorbed) by the first chuck portion 51 and the second chuck portion 52, and the first metal.
- This is a mechanism for adjusting the layer 201 and the second metal layer 202 so as to face each other.
- the alignment mechanism 6 adjusts the positions of at least one of the first chuck portion 51 and the second chuck portion 52 in a horizontal plane, so that the two joining targets 101 held (adsorbed) by the alignment mechanism 6 are held by the first chuck portion 51 and the second chuck portion 52. And 102 can be adjusted.
- the laser light source 8 is a portion that emits laser light.
- the laser light source 8 is arranged below the first chuck portion 51, and irradiates the laser beam toward the joining targets 101 and 102 on the first chuck portion 51 through the through hole 51c. do.
- the laser light source 8 may be one that allows laser light to pass through a plurality of through holes 51c provided in the first chuck portion 51 at the same time, or can move in a horizontal plane one by one. A laser beam may be passed through the through holes 51c in order.
- the laser light source 3 can focus the laser beam on the contact point between the first metal layer 201 and the second metal layer 202.
- the control unit 9B is composed of processing devices such as a CPU (Central Processing Unit) and a microcomputer, and has various operating units (chuck mechanism 5, alignment mechanism 6, pressurizing mechanism 7, laser light source 8, etc.) included in the joining device. ) Is controlled. Specifically, it is as follows.
- the control unit 9B controls the alignment mechanism 6 in a state where the two joining targets 101 and 102 are held (sucked) by the first chuck portion 51 and the second chuck portion 52.
- the positional relationship between the two joining targets 101 and 102 is adjusted so that the first metal layer 201 and the second metal layer 202 face each other.
- the control unit 9B moves at least one of the first chuck unit 51 and the second chuck unit 52 in the vertical direction while maintaining the positional relationship.
- the two bonded objects 101 and 102 that are held (adsorbed) are brought close to each other, whereby the first metal layer 201 and the second metal layer 202 are brought into contact with each other.
- the control unit 9B controls the pressurizing mechanism 7 (specifically, the drive unit 72) in a state where the first metal layer 201 and the second metal layer 202 are in contact with each other, thereby locally.
- the pressure applied may be adjusted.
- the control unit 9B controls the laser light source 3 while maintaining the state, thereby causing the local area.
- the contact point between the first metal layer 201 and the second metal layer 202 is irradiated with the laser beam through the through hole 51c corresponding to the above.
- the first metal layer 201 and the second metal layer 202 can be bonded by eutectic bonding at several points of the bonding target 101 and 102. In this way, the joining surfaces 101a and 102a of the two joining targets 101 and 102 are joined together.
- the two joining targets 101 adjusted by the alignment mechanism 6 are temporarily joined to the two joining targets 101 and 102 before the joining (main joining) by the joining device described in the first embodiment.
- the positional relationship between the two and 102 is fixed, and as a result, the positional relationship between the two joining targets 101 and 102 is less likely to be broken even when vibration or the like occurs during transportation.
- the table 112 and the diaphragm 21 may have a suction surface for individually adsorbing the two joining targets 101 and 102, respectively. ..
- the joining device may further include an alignment mechanism for adjusting the positional relationship between the two joining targets 101 and 102 held (adsorbed) on the table 112 and the diaphragm 21.
- the alignment mechanism has two joining objects adsorbed on the table 112 and the diaphragm 21 by adjusting the positions of at least one of the first chamber constituents 11 and the second chamber constituents 12 in a horizontal plane. Adjust the positional relationship between 101 and 102.
- control unit 9A controls the alignment mechanism while the two joining targets 101 and 102 are held (adsorbed) on the table 112 and the diaphragm 21, so that the positions of the two joining targets 101 and 102 are located.
- the relationship is adjusted so that the first metal layer 201 and the second metal layer 202 face each other.
- the control unit 9A forms the chamber 10 by bringing the first chamber constituent unit 11 and the second chamber constituent unit 12 into close proximity to each other while maintaining the positional relationship.
- the two joining targets 101 and 102 held (adsorbed) on the table 112 and the diaphragm 21 are brought close to each other, whereby the first metal layer 201 and the second metal layer 202 can be brought into contact with each other (including proximity). ..
- the control unit 9A controls the pressurizing mechanism 2 in a state where the first metal layer 201 and the second metal layer 202 are in contact with each other (including proximity), so that the diaphragm 21 is attached to the back surface 102b of the joining target 102. Pressure is applied at the above, whereby the first metal layer 201 and the second metal layer 202 are brought into contact with each other without a gap. Then, the control unit 9A irradiates the contact point between the first metal layer 201 and the second metal layer 202 with the laser beam via the table 112 by controlling the laser light source 3 while maintaining the state. Further, the control unit 9A scans the laser beam in the horizontal plane along the pattern shapes of the first metal layer 201 and the second metal layer 202.
- the temporary joining described in the second embodiment becomes unnecessary, and the entire system used for joining can be simplified.
- the above-mentioned joining device can be applied not only to joining using eutectic reaction (eutectic joining) but also to various joinings requiring local heating such as solder joining and welding joining.
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Abstract
Description
[1-1]接合装置の構成
図3は、第1実施形態に係る接合装置を示した概念図である。図3に示されるように、本実施形態の接合装置は、チャンバ機構1と、加圧機構2と、レーザ光源3と、制御部9Aと、を備える。以下、各部の構成について具体的に説明する。
チャンバ機構1は、第1チャンバ構成部11と、第2チャンバ構成部12と、駆動部13と、排気部14と、を有する。
加圧機構2は、ダイアフラム21を有し、テーブル112とは反対側からダイアフラム21で接合対象102の背面102bに圧力を加えることが可能な機構である。本実施形態では、加圧機構2は、ダイアフラム21と、当該ダイアフラム21を動作させる駆動部22と、で構成されている。具体的には、以下のとおりである。
レーザ光源3は、レーザ光を発する部分である。本実施形態では、レーザ光源3は、テーブル112の下方に配されており、当該テーブル112上の接合対象101及び102へ向けてレーザ光を照射しつつ、第1金属層201及び第2金属層202のパターン形状に沿ってレーザ光を水平面内で走査することが可能である。また、レーザ光源3は、第1金属層201と第2金属層202との接触箇所にレーザ光の焦点を合わせることができる。
制御部9Aは、CPU(Central Processing Unit)やマイクロコンピュータなどの処理装置で構成されており、接合装置が備える様々な動作部(チャンバ機構1、加圧機構2、レーザ光源3など)を制御する。具体的には、以下のとおりである。
図4は、第1実施形態に係る接合装置の変形例を示した概念図である。図4に示されるように、接合装置は、接合対象101及び102を加熱するヒータ4を更に備えていてもよい。本実施形態では、ヒータ4は、熱伝導率の高い材料(アルミニウム(Al)など)で形成された熱交換部41と、当該熱交換部41に熱を与える熱媒体42と、当該熱媒体42の温度を調整する温度調整部43と、で構成された熱交換器である。そして、ヒータ4は、ダイアフラム21に対してテーブル112とは反対側に配置されている。具体的には、天板122の内面に熱交換部41が設置され、当該天板122に設けられた孔を通じて、熱交換部41と温度調整部43との間での熱媒体42の循環が行われる。このような構成によれば、熱交換部41とダイアフラム21との間に圧力媒体221が介在し、当該圧力媒体221を介して熱交換部41とダイアフラム21との間での熱交換が行われる。即ち、ヒータ4の熱が、圧力媒体221を介してダイアフラム21に伝わることになる。
第1実施形態で説明した接合装置は、接合対象101及び102を個別に保持するチャック機構、及びそれらの位置関係を調整するアライメント機構、を何れも持たない装置である。このため、2つの接合対象101及び102は、当該接合装置での接合前に別の装置で位置関係が調整されて重ねられ、それからテーブル112上に搬送されて載置される。しかし、2つの接合対象101及び102を重ねただけの状態で搬送した場合、搬送時に生じる振動などで、調整された接合対象101及び102の位置関係が崩れるおそれがある。
チャック機構5は、第1チャック部51と、第2チャック部52と、を有する。
アライメント機構6は、第1チャック部51及び第2チャック部52に2つの接合対象101及び102が保持(吸着)された状態で、当該2つの接合対象101及び102の位置関係を、第1金属層201と第2金属層202とが対向するように調整するための機構である。具体的には、アライメント機構6は、第1チャック部51及び第2チャック部52の少なくとも何れか一方の位置を水平面内で調整することにより、それらに保持(吸着)された2つの接合対象101及び102の位置関係を調整することができる。
レーザ光源8は、レーザ光を発する部分である。本実施形態では、レーザ光源8は、第1チャック部51の下方に配されており、貫通孔51cを介して、当該第1チャック部51上の接合対象101及び102へ向けてレーザ光を照射する。ここで、レーザ光源8は、第1チャック部51に設けられている複数の貫通孔51cに同時にレーザ光を通すものであってもよいし、水平面内での移動が可能であって1つずつ順番に貫通孔51cにレーザ光を通すものであってもよい。また、レーザ光源3は、第1金属層201と第2金属層202との接触箇所にレーザ光の焦点を合わせることができる。
制御部9Bは、CPU(Central Processing Unit)やマイクロコンピュータなどの処理装置で構成されており、接合装置が備える様々な動作部(チャック機構5、アライメント機構6、加圧機構7、レーザ光源8など)を制御する。具体的には、以下のとおりである。
上述した第1実施形態に係る接合装置において、テーブル112及びダイアフラム21は、2つの接合対象101及び102をそれぞれ個別に吸着する吸着面を持ったものであってもよい。また、当該接合装置は、テーブル112及びダイアフラム21に保持(吸着)された2つの接合対象101及び102の位置関係を調整するアライメント機構を更に備えていてもよい。ここで、当該アライメント機構は、第1チャンバ構成部11及び第2チャンバ構成部12の少なくとも何れか一方の位置を水平面内で調整することにより、テーブル112及びダイアフラム21に吸着された2つの接合対象101及び102の位置関係を調整する。
2 加圧機構
3 レーザ光源
4 ヒータ
5 チャック機構
6 アライメント機構
7 加圧機構
8 レーザ光源
9A、9B 制御部
10 チャンバ
11 第1チャンバ構成部
12 第2チャンバ構成部
13 駆動部
14 排気部
21 ダイアフラム
22 駆動部
41 熱交換部
42 熱媒体
43 温度調整部
51 第1チャック部
51a 吸着面
51b 吸着溝
51c 貫通孔
52 第2チャック部
52a 吸着面
52b 吸着溝
71 圧接部
71a 圧接面
72 駆動部
101、102 接合対象
101a、102a 接合面
101b、102b 背面
103 センサ
111 第1円筒部
112 テーブル
121 第2円筒部
122 天板
201 第1金属層
202 第2金属層
221 圧力媒体
511 石英ブロック
521 ベース体
521a 下面
Claims (7)
- 2つの接合対象の接合面にそれぞれ形成された第1金属層及び第2金属層を、レーザ光を用いた接合で結合させることにより、前記2つの接合対象の接合面どうしを接合する装置であって、
前記レーザ光に対する透過性を持ったテーブルであり、前記2つの接合対象が、前記第1金属層と前記第2金属層とを対向させた状態で載置されるテーブルと、
ダイアフラムを有し、前記テーブルとは反対側から前記ダイアフラムで前記接合対象の背面に圧力を加えることが可能な加圧機構と、
前記レーザ光を発するレーザ光源と、
前記2つの接合対象が前記テーブルに載置された状態で、当該接合対象の背面に前記ダイアフラムで圧力を加えることにより、前記第1金属層と前記第2金属層とを接触させ、更にその状態を維持しつつ、前記第1金属層と前記第2金属層との接触箇所に前記テーブルを介して前記レーザ光を照射する制御部と、
を備える、接合装置。 - 前記接合対象を加熱するヒータを更に備え、
前記制御部は、前記接触箇所に前記レーザ光を照射する際に、前記ヒータにより、当該レーザ光を用いた前記接合に必要な温度よりも低い温度で前記接合対象を加熱する、請求項1に記載の接合装置。 - 前記加圧機構において前記ダイアフラムに圧力を伝えるための圧力媒体が液体であり、
前記ヒータは、前記ダイアフラムに対して前記テーブルとは反対側に配置され、前記ヒータと前記ダイアフラムとの間に前記圧力媒体が介在している、請求項2に記載の接合装置。 - 前記ヒータは、所定温度に調整された恒温水を熱媒体とする熱交換器である、請求項2又は3に記載の接合装置。
- 2つの接合対象の接合面にそれぞれ形成された第1金属層及び第2金属層を、レーザ光を用いた接合で結合させることにより、前記2つの接合対象の接合面どうしを接合する装置であって、
前記2つの接合対象のうちの一方の接合対象の背面を吸着する吸着面を持ち、前記レーザ光を通す貫通孔が前記吸着面に設けられた第1チャック部と、
前記2つの接合対象のうちの他方の接合対象の背面を吸着する吸着面を持った第2チャック部と、
前記第1チャック部及び前記第2チャック部に前記2つの接合対象が吸着された状態で、当該2つの接合対象の位置関係を、前記第1金属層と前記第2金属層とが対向するように調整するためのアライメント機構と、
前記第2チャック部に吸着された前記接合対象の背面のうちの前記貫通孔と重なる局所に圧力を加えるための加圧機構と、
前記レーザ光を発するレーザ光源と、
前記アライメント機構による前記位置関係の調整後、前記第1金属層と前記第2金属層とを接触させた状態で、前記加圧機構によって前記局所に圧力を加え、更にその状態を維持しつつ、当該局所に対応する前記貫通孔を介して、前記第1金属層と前記第2金属層との接触箇所に前記レーザ光を照射する制御部と、
を備える、接合装置。 - 請求項1~4の何れかに記載の接合装置での接合前において、前記2つの接合対象の位置関係の調整、及び調整後の位置関係を維持するための仮接合、を行う、請求項5に記載の接合装置。
- 2つの接合対象の接合面にそれぞれ形成された第1金属層及び第2金属層を、レーザ光を用いた接合で結合させることにより、前記2つの接合対象の接合面どうしを接合する装置であって、
前記レーザ光に対する透過性を持ち、且つ、前記2つの接合対象のうちの一方の接合対象の背面を吸着する吸着面を持ったテーブルと、
前記2つの接合対象のうちの他方の接合対象の背面を吸着する吸着面を持ったダイアフラムを有し、そのダイアフラムで当該接合対象の背面に圧力を加えることが可能な加圧機構と、
前記テーブル及び前記ダイアフラムに前記2つの接合対象が吸着された状態で、当該2つの接合対象の位置関係を、前記第1金属層と前記第2金属層とが対向するように調整するためのアライメント機構と、
前記レーザ光を発するレーザ光源と、
前記アライメント機構による前記位置関係の調整後、前記第1金属層と前記第2金属層とを接触させた状態で、前記接合対象の背面に前記ダイアフラムで圧力を加え、更にその状態を維持しつつ、前記第1金属層と前記第2金属層との接触箇所に前記テーブルを介して前記レーザ光を照射する制御部と、
を備える、接合装置。
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US10969960B2 (en) | 2016-09-01 | 2021-04-06 | Samsung Electronics Co., Ltd. | Storage device and host for the same |
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JP2004343042A (ja) * | 2003-04-25 | 2004-12-02 | Nippon Steel Chem Co Ltd | 電子装置の製造方法 |
JP2011200933A (ja) * | 2010-03-26 | 2011-10-13 | Panasonic Electric Works Co Ltd | 接合方法 |
JP2014063963A (ja) * | 2012-09-24 | 2014-04-10 | Murata Mfg Co Ltd | 電子部品の製造方法 |
CN210223961U (zh) | 2019-01-23 | 2020-03-31 | 爱莱私人有限公司 | 一种室温晶圆共晶键合的硬件配置及模块和系统 |
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