WO2022095130A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2022095130A1
WO2022095130A1 PCT/CN2020/130056 CN2020130056W WO2022095130A1 WO 2022095130 A1 WO2022095130 A1 WO 2022095130A1 CN 2020130056 W CN2020130056 W CN 2020130056W WO 2022095130 A1 WO2022095130 A1 WO 2022095130A1
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WO
WIPO (PCT)
Prior art keywords
light
insulating layer
display
layer
organic insulating
Prior art date
Application number
PCT/CN2020/130056
Other languages
English (en)
French (fr)
Inventor
张佳
彭菲菲
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US17/275,442 priority Critical patent/US11864397B2/en
Publication of WO2022095130A1 publication Critical patent/WO2022095130A1/zh
Priority to US18/519,831 priority patent/US20240107838A1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

Definitions

  • the present application relates to the field of display technology, and in particular, to a display panel and a display device.
  • the driving circuit for driving the pixels in the CUP area can be set at the periphery of the CUP area, and multiple leads are used to connect the peripheral area of the CUP area.
  • the driving circuit is electrically connected to the pixels in the CUP area, but the leads with a large number, dense arrangement, and long distance across the line are prone to generate parasitic capacitance, which leads to the problem of uneven display in the CUP area and affects the display quality of the display panel.
  • Embodiments of the present application provide a display panel and a display device, which can improve the problem of uneven display caused by parasitic capacitance in the display light-transmitting area.
  • An embodiment of the present application provides a display panel, including a display light-transmitting area, a main display area, and a transition display area located between the display light-transmitting area and the main display area
  • the display panel includes: a first light-emitting device , located in the display light-transmitting area; the first pixel driving circuit, located in the transition display area, is electrically connected to the first light-emitting device for driving the first light-emitting device to emit light; the signal wiring layer, electrically connected to the first pixel driving circuit; the first wiring layer extends along the direction from the transition display area to the display light-transmitting area, and is connected to the first pixel driving circuit and the first Between the light-emitting devices, the first wiring layer and the signal wiring layer are partially overlapped; the capacitive blocking layer is located between the first wiring layer and the signal wiring layer, and the capacitive blocking layer includes at least one organic insulating layer.
  • the relative permittivity of the organic insulating layer is less than or equal to 3.8.
  • the relative permittivity of the organic insulating layer is less than or equal to 3.3.
  • the thickness of the organic insulating layer is greater than or equal to 0.5 microns and less than or equal to 3 microns.
  • the thickness of the organic insulating layer is greater than or equal to 1.5 microns and less than or equal to 2.5 microns.
  • the visible light transmittance of the organic insulating layer is greater than or equal to 85%.
  • the organic insulating layer includes a photosensitive resin composition.
  • the photosensitive resin composition includes a solvent, an additive, a photopolymerization initiator, and is selected from the group consisting of a polyimide precursor structure, a polybenzoxazole precursor structure, and a silicon-based precursor.
  • a polymer in which at least one of a structure, a polyacrylic acid precursor structure and a phenolic resin structure is used as a main component.
  • the capacitive blocking layer further includes an inorganic insulating layer on at least one side of the organic insulating layer.
  • the inorganic insulating layer is located between the organic insulating layer and the signal wiring layer, and/or the inorganic insulating layer is located between the organic insulating layer and the first wiring layer between.
  • the organic insulating layer includes a first organic insulating layer and a second organic insulating layer, and a material for preparing the first organic insulating layer is different from a material for preparing the second organic insulating layer.
  • the first organic insulating layer and the second organic insulating layer have different dielectric constants and light transmittances.
  • the signal wiring layer includes a power signal line connected to the first voltage terminal.
  • the display panel further includes: a first insulating layer located between the first pixel driving circuit and the signal wiring layer, the signal wiring layer passing through the first insulating layer
  • the via hole is connected to the first pixel driving circuit;
  • the flat layer is located between the first wiring layer and the first light-emitting device, and the first light-emitting device is connected to the first light-emitting device through the via hole on the flat layer.
  • the first wiring layer is connected.
  • the first light emitting device includes at least one of an organic light emitting diode, a micro light emitting diode, and a sub-millimeter light emitting diode.
  • the present application also provides a display device, including any of the above-mentioned display panels.
  • the display device further includes a sensor facing the display light-transmitting area.
  • an embodiment of the present application provides a display panel and a display device.
  • the display panel includes a display light-transmitting area, a main display area, and a display light-transmitting area and a main display area located between the display light-transmitting area and the main display area.
  • the transition display area includes: a first light-emitting device, located in the display light-transmitting area; a first pixel driving circuit, located in the transition display area, electrically connected to the first light-emitting device for use in the first light-emitting device is driven to emit light; the signal wiring layer is electrically connected to the first pixel driving circuit; the first wiring layer extends along the direction from the transition display area to the display light-transmitting area, and connected between the first pixel driving circuit and the first light-emitting device, the first wiring layer and the signal wiring layer are partially overlapped; the capacitance blocking layer is located between the first wiring layer and the signal wiring layer.
  • the capacitance blocking layer includes at least one organic insulating layer, so as to improve the problem of uneven display caused by parasitic capacitance in the display light-transmitting area, and improve the display effect of the display light-transmitting area .
  • FIG. 1A is a schematic structural diagram of a display panel provided by an embodiment of the present application.
  • Fig. 1B is a partial enlarged view at A in Fig. 1A;
  • FIG. 1C to 1H are schematic structural diagrams of the display panel in FIG. 1A cut along B-B'.
  • FIG. 2 is a graph of the relationship between the change rate of driving current and the change of parasitic capacitance according to an embodiment of the present application.
  • FIG. 1A is a schematic structural diagram of a display panel provided by an embodiment of the present application; as shown in FIG. 1B , which is a partial enlarged view of A in FIG. 1A ; and FIG. 1C to FIG. 1H , which are FIG. 1A shows a schematic structural diagram of the panel cut along BB′, as shown in FIG. 2 , which is a diagram of the relationship between the change rate of driving current and the change of parasitic capacitance according to an embodiment of the present application.
  • An embodiment of the present application provides a display panel 100, including a display light-transmitting area 100a, a main display area 100c, and a transition display area 100b located between the display light-transmitting area 100a and the main display area 100c.
  • the display panel 100 includes:
  • the first light-emitting device 101 is located in the display light-transmitting area 100a;
  • a first pixel driving circuit 102 located in the transition display area 100b, electrically connected to the first light-emitting device 101 for driving the first light-emitting device 101 to emit light;
  • the signal wiring layer 103 is located on the side of the first pixel driving circuit 102 close to the first light emitting device 101 , and is electrically connected to the first pixel driving circuit 102 ;
  • the first wiring layer 104 is located on the side of the signal wiring layer 103 away from the first pixel driving circuit 102, extends along the direction from the transition display area 100b to the display light-transmitting area 100a, and is connected to Between the first pixel driving circuit 102 and the first light emitting device 101, the first wiring layer 104 and the signal wiring layer 103 are partially overlapped;
  • the capacitive blocking layer 105 is located between the first wiring layer 104 and the signal wiring layer 103 , and the capacitive blocking layer 105 includes at least one organic insulating layer 1051 to reduce the distance between the first wiring layer 104 and the signal wiring layer 103 .
  • the parasitic capacitance Cp generated between the signal wiring layers 103 reduces the influence of the parasitic capacitance Cp on the driving current I1 driving the first light emitting device 101 to emit light, and realizes uniform display in the display light transmission area 100a.
  • the parasitic capacitance Cp generated by the first wiring layer 104 and the signal wiring layer 103 is affected by the overlapping area S of the first wiring layer 104 and the signal wiring layer 103 , the first The thickness d and the relative permittivity ⁇ of the dielectric layer (ie, the capacitance blocking layer 105 ) between the wiring layer 104 and the signal wiring layer 103 are affected, so the first wiring layer 104 can be adjusted by adjusting the thickness d and the relative permittivity ⁇ .
  • the overlapping area S with the signal trace layer 103 and/or the thickness d and relative permittivity ⁇ of the capacitive barrier layer 105 reduce the parasitic generated by the first trace layer 104 and the signal trace layer 103 Capacitance Cp.
  • the overlapping area S of the first wiring layer 104 and the signal wiring layer 103 the smaller the overlapping area S of the first wiring layer 104 and the signal wiring layer 104.
  • the overlapping area S of the first wiring layer 104 and the signal wiring layer 103 is affected by the high resolution requirement of the display panel and the wiring process and other factors.
  • the wiring layer 103 will inevitably have overlapping areas S of different sizes, so by adjusting the parameters of the capacitive barrier layer 105 , the generated space between the first wiring layer 104 and the signal wiring layer 103 can be further reduced. Parasitic capacitance Cp.
  • the relative permittivity of the organic insulating layer 1051 may be less than or equal to 3.8.
  • the relative dielectric constant of the organic insulating layer 1051 is less than or equal to 3.3, so as to better reduce the parasitic capacitance Cp generated between the first wiring layer 104 and the signal wiring layer 103 .
  • the organic insulating layer 1051 includes a weak polar material or a non-polar material; the organic insulating layer 1051 includes a photosensitive resin composition.
  • the photosensitive resin composition includes a solvent, an additive, a photopolymerization initiator, and is selected from the group consisting of a polyimide precursor structure, a polybenzoxazole precursor structure, a silicon-based precursor structure, and a polyacrylic acid precursor.
  • a polymer whose main component is at least one of a structure and a phenolic resin structure.
  • the organic insulating layer 1051 can reduce the relative permittivity of the organic insulating layer 1051 by selecting a low-polarity polymer main chain structure and grafting bulky, low-polarity side chains on the main chain.
  • the thickness of the organic insulating layer 1051 is greater than or equal to 0.5 micrometers and less than or equal to 3 micrometers.
  • the thickness of the organic insulating layer 1051 can be equal to 0.5 microns, 0.55 microns, 0.7 microns, 0.85 microns, 1.2 microns, 1.4 microns, 1.8 microns, 2.2 microns, 2.5 microns, 2.8 microns, 2.9 microns, 2.98 microns, 3 microns, etc. .
  • the thickness of the first wiring layer 104 is generally thin, and the capacitance blocking layer 105 is located under the first wiring layer 104 .
  • the thickness of the capacitive barrier layer 105 is relatively thin, there is likely to be a step difference on the capacitive barrier layer 105, which is very likely to cause cracks and disconnections in the first wiring layer 104, which will affect the display light transmission area. Normal display of 100a. Therefore, making the organic insulating layer 1051 have a certain thickness can eliminate the step difference on the capacitive barrier layer 105 and avoid problems such as cracks and disconnections in the first wiring layer 104 .
  • the thickness of the organic insulating layer 1051 may be greater than or equal to 1.5 ⁇ m and less than or equal to 2.5 ⁇ m.
  • the thickness of the organic insulating layer 1051 may be equal to 1.5 microns, 1.55 microns, 1.7 microns, 1.85 microns, 1.9 microns, 1.94 microns, 2 microns, 2.2 microns, 2.35 microns, 2.4 microns, 2.5 microns, etc.
  • the visible light transmittance of the organic insulating layer 1051 may be greater than or equal to 85%.
  • the visible light transmittance of the organic insulating layer 1051 may be equal to 85%, 88%, 90%, 93%, 95%, 98%, 99%, and the like.
  • the organic insulating layer 1051 can be designed with a multi-layer structure.
  • the organic insulating layer 1051 includes a first organic insulating layer 1052 and a second organic insulating layer 1053, and the preparation material of the first organic insulating layer 1052 is different from that of the second organic insulating layer 1053, so as to While reducing the parasitic capacitance Cp generated between the first wiring layer 104 and the signal wiring layer 103 , the light transmittance of the display light-transmitting region 100a or the interface of the organic insulating layer 1051 is reduced. Properties such as adhesion are improved.
  • the first organic insulating layer 1052 and the second organic insulating layer 1053 have different dielectric constants; further, the first organic insulating layer 1052 and the second organic insulating layer 1053 have different dielectric constants of light transmittance.
  • the dielectric constants of the first organic insulating layer 1052 and the second organic insulating layer 1053 are similar, if the light transmittance of the first organic insulating layer 1052 is better than that of the second organic insulating layer 1053, the thickness of the second organic insulating layer 1053 can be made larger than the thickness of the first organic insulating layer 1052, so as to reduce the transparency of the organic insulating layer 1051 to the display light-transmitting region 100a.
  • the parasitic capacitance Cp generated between the first wiring layer 104 and the signal wiring layer 103 is reduced while not being affected by the light rate.
  • the first organic insulating layer 1052 and the second organic insulating layer 1053 include the photosensitive resin composition.
  • the organic insulating layer 1051 may further include a third organic insulating layer, a fourth organic insulating layer, etc., so as to further adjust the properties such as the light transmittance of the display light-transmitting region 100a, which will not be repeated here. Repeat.
  • the capacitive blocking layer 105 further includes an inorganic insulating layer 1054 on at least one side of the organic insulating layer 1051 , so as to maintain the balance of various properties of the display light-transmitting region 100 a.
  • the inorganic insulating layer 1054 is located between the organic insulating layer 1051 and the signal wiring layer 103 , and/or the inorganic insulating layer 1054 is located between the first wiring layer 104 and the organic wiring layer 103 . between the insulating layers 1051 .
  • the inorganic insulating layer 1054 may also be located between the two organic insulating layers 1051 ; further, the organic insulating layer 1051 and the inorganic insulating layer 1054 may be periodically disposed on the first traces Between the layer 104 and the signal trace layer 103, that is, the capacitance blocking layer 105 may include the organic insulating layer 1051 and the inorganic insulating layer 1054 stacked on each other, and the organic insulating layer 1051 stacked on each other And the inorganic insulating layer 1054 may be repeatedly disposed between the first wiring layer 104 and the signal wiring layer 103 in a cycle.
  • the inorganic insulating layer 1054 has better water and oxygen barrier properties than the organic insulating layer 1051 , disposing the inorganic insulating layer 1054 on at least one side of the organic insulating layer 1051 can block the organic insulating layer The influence of the gas or water vapor released from the layer 1051 during the manufacturing process on the first wiring layer 104 and the signal wiring layer 103 .
  • the gas or water vapor released from the organic insulating layer 1051 during the manufacturing process can prevent the display panel 100 from being partially raised. , to ensure that the display panel 100 has good flatness.
  • the signal wiring layer 103 includes a power signal line connected to the first voltage terminal VDD.
  • the first pixel driving circuit 102 includes a plurality of transistors 109 , and the power signal line is electrically connected to one of the source or drain of at least one of the transistors 109 , so The first wiring layer 104 is electrically connected to one of the source or drain of at least one of the transistors 109 , so that the first light-emitting device 101 emits light under the driving of the first pixel driving circuit 102 .
  • the capacitance blocking layer 105 reduces the parasitic capacitance Cp generated between the first wiring layer 104 and the signal wiring layer 103 , thereby reducing the driving of the parasitic capacitance Cp for driving the first light emitting device 101 to emit light
  • the influence of the current I1 improves the display uniformity of the display light-transmitting region 100a.
  • the plurality of transistors 109 include at least one of oxide transistors and silicon transistors.
  • the plurality of transistors 109 include field effect transistors; further, the plurality of transistors 109 include thin film transistors. It can be understood that the structures of the plurality of transistors 109 are not limited to the double-gate structure shown in FIG. 1G , and those skilled in the art can also choose other structures, such as a single-gate structure, etc., which will not be repeated here.
  • the parasitic capacitance Cp generated between the first wiring layer 104 and the signal wiring layer 103 is reduced from 300fF (fly method) to 50fF, that is, the parasitic capacitance Cp is reduced by 6 times , the rate of change of the driving current I1 for driving the first light-emitting device 101 to emit light is reduced from 50.4% to 13.2%, and the influence of the parasitic capacitance Cp on the driving current I1 is significantly reduced, which is beneficial to The uniform display of the display light-transmitting area 100a is realized.
  • the display panel 100 further includes:
  • the first insulating layer 106 is located between the first pixel driving circuit 102 and the signal wiring layer 103 , and the signal wiring layer 103 is connected to the first insulating layer 106 through the via holes on the first insulating layer 106 .
  • the pixel driving circuit 102 is connected;
  • the flat layer 107 is located between the first wiring layer 104 and the first light emitting device 101 , and the first light emitting device 101 is connected to the first wiring layer 104 through the via hole on the flat layer 107 connect.
  • the first light-emitting device 101 includes:
  • the first anode 1011 is located on the side of the flat layer 107 away from the first wiring layer 104 , the preparation material of the first anode 1011 includes a transparent conductive film, and further, the preparation material of the first anode 1011 Including one of indium tin oxide, indium tin zinc oxide, etc., or a combination of indium tin oxide, indium tin zinc oxide and silver.
  • a first cathode 1013 located on a side of the first anode 1011 away from the flat layer 107;
  • the first light-emitting layer 1012 is located between the first anode 1011 and the first cathode 1013 .
  • the first light-emitting layer 1012 further includes one of a quantum dot material, a perovskite material, and a fluorescent material.
  • the first light emitting device 101 includes at least one of organic light emitting diodes, micro light emitting diodes and sub-millimeter light emitting diodes.
  • the first light-emitting device 101 includes a red light-emitting device, a blue light-emitting device, a green light-emitting device, a white light-emitting device, and the like.
  • the display panel 100 further includes:
  • a substrate 110, the first pixel driving circuit 102 is located on the substrate 110, and the substrate 110 includes a rigid substrate and a flexible substrate.
  • the preparation material of the substrate 110 includes glass, quartz, ceramic, plastic or polymer resin, etc.; the polymer resin includes polyethersulfone, polyacrylate, polyarylate, polyetherimide, polyethylene naphthalate At least one of alcohol ester, polyethylene terephthalate, polyphenylene sulfide, polyallyl ester, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate.
  • the pixel definition layer 108 is located on the first anode 1011 and the flat layer 107 , and the first light emitting layer 1012 is located in the pixel definition area of the pixel definition layer 108 .
  • the display panel 100 may further include touch electrodes, a buffer layer, an encapsulation layer, a color filter layer and other parts that are not shown.
  • the first wiring layer 104 includes a plurality of connecting wires 1041 located in different layers, an insulating layer 1042 is arranged between the plurality of the connecting wires 1041 , and the plurality of the connecting wires 1041
  • the connecting wires 1041 are electrically connected through the vias on the insulating layer 1042 to reduce the wiring density.
  • a plurality of interconnected connecting lines 1041 extend from the transition display area 100b to the display light-transmitting area 100a, so as to realize the electrical connection between the first pixel driving circuit 102 and the first light emitting device 101 .
  • FIG. 1B only the portion of the first wiring layer 104 located in the transition display area 100b is shown, and the portion of the first wiring layer 104 located in the display light-transmitting area 100a is not shown.
  • the display panel 100 further includes:
  • the second light-emitting device 200 is located in the transition display area 100b, and the second light-emitting device 200 is driven to emit light by the first pixel driving circuit 102;
  • the third light-emitting device 300 is located in the main display area 100c;
  • the second pixel driving circuit located in the main display area 100c, is used for driving the third light emitting device 300 to emit light.
  • the light-emitting area of the third light-emitting device 300 is larger than the light-emitting area of the first light-emitting device 101 ; further, the light-emitting area of the third light-emitting device 300 is larger than the light-emitting area of the second light-emitting device 200 .
  • the display panel 100 includes a first pixel unit located in the display light-transmitting area 100a, the first pixel unit includes a plurality of first pixels, and each of the first pixels includes a plurality of sub-pixels, so The sub-pixels are formed by the first light emitting device 101 .
  • the sub-pixels include a first sub-pixel, a second sub-pixel and a third sub-pixel with different emission colors
  • the first pixel includes two of the first sub-pixels and two of the second sub-pixels. pixel and four of the third sub-pixels.
  • the first sub-pixel, the second sub-pixel and the third sub-pixel include red sub-pixels, green sub-pixels, blue sub-pixels, white sub-pixels, and the like.
  • the first subpixel is a red subpixel
  • the second subpixel is a blue subpixel
  • the third subpixel is a green subpixel.
  • the display panel 100 further includes:
  • the second pixel unit is located in the transition display area 100b, the second pixel unit includes a plurality of second pixels, the second pixels include a plurality of transition sub-pixels, and the transition sub-pixels are composed of the second light emitting device 200 formed.
  • the number and arrangement of the transition sub-pixels included in the second pixel are the same as the number and arrangement of the sub-pixels included in the first pixel.
  • the third pixel unit is located in the main display area 100c, the third pixel unit includes a plurality of third pixels, the third pixels include a plurality of main sub-pixels, and the main sub-pixels are formed by the third light emitting device 300 .
  • the number and arrangement of the main sub-pixels included in the third pixel are the same as the number and arrangement of the sub-pixels included in the first pixel, so that the main display area 100c,
  • the transition display area 100b and the display light-transmitting area 100a have similar or identical display effects.
  • the display panel 100 may include a plurality of the display light-transmitting regions 100a, and the positions of the plurality of the display light-transmitting regions 100a can be set according to actual requirements, which will not be repeated here.
  • the present application also provides a display device including any of the above-mentioned display panels.
  • the display device further includes a sensor, and the sensor is facing the display light-transmitting area, so that the display device can realize functions such as fingerprint recognition, photography, light sensing, distance sensing, and the like.
  • the senor includes a fingerprint recognition sensor, a camera, a structured light sensor, a time-of-flight sensor, a distance sensor, a light sensor, etc., so that the sensor can collect signals through the display light-transmitting area, thereby enabling the display device Realize off-screen sensing solutions such as off-screen fingerprint recognition, off-screen camera, off-screen face recognition, and off-screen distance perception.
  • the display device further includes a touch panel, and the touch panel is combined with the display panel in a built-in or externally mounted manner, so that the display device has a touch function.
  • the display device includes fixed terminals such as televisions and desktop computers, mobile terminals such as mobile phones and notebook computers, and wearable devices such as wristbands, VR (virtual display) devices, and AR (augmented display) devices.
  • fixed terminals such as televisions and desktop computers
  • mobile terminals such as mobile phones and notebook computers
  • wearable devices such as wristbands, VR (virtual display) devices, and AR (augmented display) devices.
  • the display panel 100 includes a display light-transmitting area 100a, a main display area 100c, and a transition between the display light-transmitting area 100a and the main display area 100c
  • the display area 100b, the display panel 100 includes: a first light-emitting device 101 located in the display light-transmitting area 100a; a first pixel driving circuit 102 located in the transition display area 100b and electrically connected to the first light-emitting device
  • the device 101 is used for driving the first light-emitting device 101 to emit light;
  • the signal wiring layer 103 is located on the side of the first pixel driving circuit 102 close to the first light-emitting device 101, and is electrically connected to the first light-emitting device 101.

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Abstract

一种显示面板（100）及显示装置，显示面板（100）包括连接于第一像素驱动电路（102）和第一发光器件（101）之间的第一走线层（104）；电性连接于第一像素驱动电路（102）且与第一走线层（104）部分重叠的信号走线层（103）；以及位于第一走线层（104）与信号走线层（103）之间且包括至少一有机绝缘层的电容阻挡层（105），以通过电容阻挡层（105）改善显示透光区（100a）的显示效果。

Description

显示面板及显示装置 技术领域
本申请涉及显示技术领域，特别涉及一种显示面板及显示装置。
 背景技术
在屏下摄像头(Camera Under Panel, CUP) 技术中，为了提升CUP区光线的透过率，可将驱动CUP区像素的驱动电路设置在CUP区的外围，并利用多条引线将CUP区外围的驱动电路与CUP区内的像素进行电性连接，但数量多、排布密集、跨线距离长的引线易产生寄生电容，导致CUP区出现显示不均的问题，影响显示面板的显示质量。
 技术问题
本申请实施例提供一种显示面板及显示装置，可以改善显示透光区因寄生电容导致的显示不均的问题。
 技术解决方案
本申请实施例提供一种显示面板，包括显示透光区、主显示区及位于所述显示透光区和所述主显示区之间的过渡显示区，所述显示面板包括：第一发光器件，位于所述显示透光区；第一像素驱动电路，位于所述过渡显示区，电性连接于所述第一发光器件以用于驱动所述第一发光器件发光；信号走线层，电性连接于所述第一像素驱动电路；第一走线层，沿由所述过渡显示区到所述显示透光区的方向延伸，并连接于所述第一像素驱动电路和所述第一发光器件之间，所述第一走线层与所述信号走线层部分重叠；电容阻挡层，位于所述第一走线层与所述信号走线层之间，所述电容阻挡层包括至少一有机绝缘层。
在一些实施例中，所述有机绝缘层的相对介电常数小于或等于3.8。
在一些实施例中，所述有机绝缘层的相对介电常数小于或等于3.3。
在一些实施例中，所述有机绝缘层的厚度大于或等于0.5微米且小于或等于3微米。
在一些实施例中，所述有机绝缘层的厚度大于或等于1.5微米且小于或等于2.5微米。
在一些实施例中，所述有机绝缘层的可见光透过率大于或等于85%。
在一些实施例中，所述有机绝缘层包括感光性树脂组合物。
在一些实施例中，所述感光性树脂组合物包括溶剂、添加剂、光聚合反应引发剂，以及，以选自聚酰亚胺前体结构、聚苯并恶唑前体结构、硅基前体结构、聚丙烯酸前体结构及酚醛树脂结构中的至少一种结构作为主成分的聚合物。
在一些实施例中，所述电容阻挡层还包括位于所述有机绝缘层的至少一侧的无机绝缘层。
在一些实施例中，所述无机绝缘层位于所述有机绝缘层与所述信号走线层之间，和/或，所述无机绝缘层位于所述有机绝缘层与所述第一走线层之间。
在一些实施例中，所述有机绝缘层包括第一有机绝缘层和第二有机绝缘层，所述第一有机绝缘层的制备材料与所述第二有机绝缘层的制备材料不同。
在一些实施例中，所述第一有机绝缘层与所述第二有机绝缘层具有不同的介电常数及透光率。
在一些实施例中，所述信号走线层包括与第一电压端连接的电源信号线。
在一些实施例中，所述显示面板还包括：第一绝缘层，位于所述第一像素驱动电路及所述信号走线层之间，所述信号走线层通过所述第一绝缘层上的过孔与所述第一像素驱动电路连接；平坦层，位于所述第一走线层与所述第一发光器件之间，所述第一发光器件通过所述平坦层上的过孔与所述第一走线层连接。
在一些实施例中，所述第一发光器件包括有机发光二极管、微型发光二极管及次毫米发光二极管中的至少一种。
本申请还提供一种显示装置，包括上述的任一种显示面板。
在一些实施例中，所述显示装置还包括传感器，所述传感器正对所述显示透光区。
 有益效果
相较于现有技术，本申请实施例提供的一种显示面板及显示装置，所述显示面板包括显示透光区、主显示区及位于所述显示透光区和所述主显示区之间的过渡显示区，所述显示面板包括：第一发光器件，位于所述显示透光区；第一像素驱动电路，位于所述过渡显示区，电性连接于所述第一发光器件以用于驱动所述第一发光器件发光；信号走线层，电性连接于所述第一像素驱动电路；第一走线层，沿由所述过渡显示区到所述显示透光区的方向延伸，并连接于所述第一像素驱动电路和所述第一发光器件之间，所述第一走线层与所述信号走线层部分重叠；电容阻挡层，位于所述第一走线层与所述信号走线层之间，所述电容阻挡层包括至少一有机绝缘层，以改善所述显示透光区因寄生电容导致出现显示不均的问题，改善所述显示透光区的显示效果。
 附图说明
图1A为本申请的实施例提供的显示面板的结构示意图；
图1B为图1A中A处的局部放大图；
图1C~图1H为图1A中显示面板沿B-B’剖切的结构示意图。
图2为本申请的实施例提供的驱动电流变化率与寄生电容变化关系图。
 本发明的实施方式
为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
具体地，请参阅图1A，其为本申请的实施例提供的显示面板的结构示意图；如图1B所示，其为图1A中A处的局部放大图；如图1C~图1H，其为图1A中显示面板沿B-B’剖切的结构示意图，如图2所示，其为本申请的实施例提供的驱动电流变化率与寄生电容变化关系图。
本申请实施例提供一种显示面板100，包括显示透光区100a、主显示区100c及位于所述显示透光区100a和所述主显示区100c之间的过渡显示区100b，所述显示面板100包括：
第一发光器件101，位于所述显示透光区100a；
第一像素驱动电路102，位于所述过渡显示区100b，电性连接于所述第一发光器件101以用于驱动所述第一发光器件101发光；
信号走线层103，位于所述第一像素驱动电路102靠近所述第一发光器件101的一侧，且电性连接于所述第一像素驱动电路102；
第一走线层104，位于所述信号走线层103远离所述第一像素驱动电路102的一侧，沿由所述过渡显示区100b到所述显示透光区100a的方向延伸，并连接于所述第一像素驱动电路102和所述第一发光器件101之间，所述第一走线层104与所述信号走线层103部分重叠；
电容阻挡层105，位于所述第一走线层104与所述信号走线层103之间，所述电容阻挡层105包括至少一有机绝缘层1051，以降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp，从而降低寄生电容Cp对驱动所述第一发光器件101发光的驱动电流I 1的影响，实现所述显示透光区100a的均一显示。
请继续参阅图1A~图1F，由于所述第一走线层104与所述信号走线层103产生的寄生电容Cp=Sε/4πkd；其中，S为所述第一走线层104与所述信号走线层103的交叠面积，ε为所述电容阻挡层105的相对介电常数，d为所述电容阻挡层105的厚度，k为静电力常量。因此，所述第一走线层104与所述信号走线层103产生的寄生电容Cp受所述第一走线层104与所述信号走线层103的交叠面积S、所述第一走线层104与所述信号走线层103之间的介质层（即所述电容阻挡层105）的厚度d及相对介电常数ε的影响，故可通过调整所述第一走线层104与所述信号走线层103交叠面积S和/或所述电容阻挡层105的厚度d、相对介电常数ε降低所述第一走线层104与所述信号走线层103产生的寄生电容Cp。
即在所述电容阻挡层105的参数一定的情况下，所述第一走线层104与所述信号走线层103交叠面积S越小，所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp越小。但所述第一走线层104与所述信号走线层103的交叠面积S受显示面板高分辨率的要求及布线工艺等因素的影响，所述第一走线层104与所述信号走线层103必然会存在大小不一的交叠面积S，因此可通过调整所述电容阻挡层105的参数进一步降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp。
具体地，通过降低所述电容阻挡层105的相对介电常数ε，和/或，增大所述电容阻挡层105的厚度d以降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp。
进一步地，通过降低所述有机绝缘层1051的相对介电常数，以降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp；如在频率为100kHz的测试条件下，所述有机绝缘层1051的相对介电常数可以小于或等于3.8。更进一步地，所述有机绝缘层1051的相对介电常数小于或等于3.3，以更好的降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp。
所述有机绝缘层1051包括弱极性材料或非极性材料；所述有机绝缘层1051包括感光性树脂组合物。所述感光性树脂组合物包括溶剂、添加剂、光聚合反应引发剂，以及，以选自聚酰亚胺前体结构、聚苯并恶唑前体结构、硅基前体结构、聚丙烯酸前体结构及酚醛树脂结构中的至少一种结构作为主成分的聚合物。所述有机绝缘层1051可通过选择低极性的聚合物的主链结构，并在主链上接枝大体积、低极性侧链，以降低所述有机绝缘层1051的相对介电常数。
具体地，通过增大所述有机绝缘层1051的厚度，以降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp；其中，所述有机绝缘层1051的厚度大于或等于0.5微米且小于或等于3微米。如所述有机绝缘层1051的厚度可等于0.5微米、0.55微米、0.7微米、0.85微米、1.2微米、1.4微米、1.8微米、2.2微米、2.5微米、2.8微米、2.9微米、2.98微米、3微米等。
更进一步地，为保证所述显示透光区100a的透光率，所述第一走线层104的厚度一般均较薄，而所述电容阻挡层105位于所述第一走线层104下，若所述电容阻挡层105的厚度较薄，所述电容阻挡层105上易存在段差，极易造成所述第一走线层104出现裂纹、断线等问题，影响所述显示透光区100a的正常显示。因此，使所述有机绝缘层1051具有一定的厚度可以消除所述电容阻挡层105上的段差，避免所述第一走线层104出现裂纹、断线等问题。但所述有机绝缘层1051的厚度过大又会增加所述显示面板100在制程中的膜层应力匹配难度，造成所述显示面板100出现翘曲或破片等问题。因此，一方面为使所述第一有机绝缘层1051起到膜层平坦化的作用的同时，降低膜层应力匹配难度，防止所述显示面板100出现翘曲或破片等问题，另一方面为降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp，所述有机绝缘层1051的厚度可大于或等于1.5微米且小于或等于2.5微米。如所述有机绝缘层1051的厚度可等于1.5微米、1.55微米、1.7微米、1.85微米、1.9微米、1.94微米、2微米、2.2微米、2.35微米、2.4微米、2.5微米等。
此外，为避免所述有机绝缘层1051对所述显示透光区100a的透光率造成影响，可使所述有机绝缘层1051的可见光透过率大于或等于85%。如所述有机绝缘层1051的可见光透过率可以等于85%、88%、90%、93%、95%、98%、99%等。
请继续参阅图1D，为在降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp的同时，保证所述显示透光区100a仍具有较好的透光率，保持所述显示透光区100a的各性能的平衡，所述有机绝缘层1051可采用多层结构设计。
具体地，所述有机绝缘层1051包括第一有机绝缘层1052和第二有机绝缘层1053，所述第一有机绝缘层1052的制备材料与所述第二有机绝缘层1053的制备材料不同，以在降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp的同时，使所述显示透光区100a的透光率，或所述有机绝缘层1051的界面附着力等性能得到改善。
进一步地，所述第一有机绝缘层1052与所述第二有机绝缘层1053具有不同的介电常数；更进一步地，所述第一有机绝缘层1052和所述第二有机绝缘层1053具有不同的透光率。如在所述第一有机绝缘层1052和所述第二有机绝缘层1053的介电常数相近的情况下，若所述第一有机绝缘层1052的透光率优于所述第二有机绝缘层1053的透光率，则可将使所述第二有机绝缘层1053的厚度大于所述第一有机绝缘层1052的厚度，以降低所述有机绝缘层1051对所述显示透光区100a的透光率的影响的同时，降低所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp。其中，所述第一有机绝缘层1052和所述第二有机绝缘层1053包括所述感光性树脂组合物。
可以理解的，所述有机绝缘层1051还可以包括第三有机绝缘层、第四有机绝缘层等，以对所述显示透光区100a的透光性等性能进行进一步调整，在此不再进行赘述。
请继续参阅图1E~图1H，所述电容阻挡层105还包括位于所述有机绝缘层1051的至少一侧的无机绝缘层1054，以保持所述显示透光区100a的各性能的平衡。
具体地，所述无机绝缘层1054位于所述有机绝缘层1051与所述信号走线层103之间，和/或，所述无机绝缘层1054位于所述第一走线层104与所述有机绝缘层1051之间。
可以理解的，所述无机绝缘层1054还可位于两所述有机绝缘层1051之间；进一步地，所述有机绝缘层1051和所述无机绝缘层1054可呈周期设置于所述第一走线层104和所述信号走线层103之间，即所述电容阻挡层105可包括相互层叠设置的所述有机绝缘层1051和所述无机绝缘层1054，相互层叠设置的所述有机绝缘层1051和所述无机绝缘层1054可以呈周期重复设置于所述第一走线层104和所述信号走线层103之间。
由于所述无机绝缘层1054较所述有机绝缘层1051具有较好的水氧阻隔性，因此，将所述无机绝缘层1054设置于所述有机绝缘层1051的至少一侧可以阻隔所述有机绝缘层1051在制程工艺中释放出的气体或水汽对所述第一走线层104和所述信号走线层103的影响。此外，还可以避免所述有机绝缘层1051位于所述无机绝缘层1054下时，所述有机绝缘层1051在制程工艺中释放出的气体或水汽导致所述显示面板100出现部分区域凸起的现象，保证所述显示面板100具有较好的平整性。
请继续参阅图1A~图1H，所述信号走线层103包括与第一电压端VDD连接的电源信号线。进一步地，如图1G所示，所述第一像素驱动电路102包括多个晶体管109，所述电源信号线与至少一所述晶体管109的源极或漏极中的一者电性连接，所述第一走线层104与至少一所述晶体管109的源极或漏极中的一者电性连接，以使所述第一发光器件101在所述第一像素驱动电路102的驱动下发光。通过所述电容阻挡层105降低所述第一走线层104与所述信号走线层103之间的产生的寄生电容Cp，从而降低寄生电容Cp对驱动所述第一发光器件101发光的驱动电流I 1的影响，提高所述显示透光区100a的显示均一性。
其中，多个所述晶体管109包括氧化物晶体管、硅晶体管中的至少一种。多个所述晶体管109包括场效应晶体管；进一步地，多个所述晶体管109包括薄膜晶体管。可以理解的，多个所述晶体管109的结构不限于图1G所示的双栅结构，本领域技术人员还可选用其他的结构形式，如单栅结构等，在此不再进行赘述。
请继续参阅图2，当所述第一走线层104与所述信号走线层103之间产生的寄生电容Cp从300fF（飞法）减小至50fF时，即寄生电容Cp降低了6倍，则驱动所述第一发光器件101发光的驱动电流I 1的变化率从50.4%减小至13.2%，所述寄生电容Cp对所述驱动电流I 1的影响得到了显著的降低，有利于实现所述显示透光区100a的均一显示。
请继续参阅图1A~图1H，所述显示面板100还包括：
第一绝缘层106，位于所述第一像素驱动电路102及所述信号走线层103之间，所述信号走线层103通过所述第一绝缘层106上的过孔与所述第一像素驱动电路102连接；
平坦层107，位于所述第一走线层104与所述第一发光器件101之间，所述第一发光器件101通过所述平坦层107上的过孔与所述第一走线层104连接。
进一步地，所述第一发光器件101包括：
第一阳极1011，位于所述平坦层107远离所述第一走线层104的一侧，所述第一阳极1011的制备材料包括透明导电薄膜，进一步地，所述第一阳极1011的制备材料包括氧化铟锡、氧化铟锡锌等中的一种，或氧化铟锡、氧化铟锡锌与银等的组合。
第一阴极1013，位于所述第一阳极1011远离所述平坦层107的一侧；以及，
第一发光层1012，位于所述第一阳极1011和所述第一阴极1013之间。
进一步地，所述第一发光层1012还包括量子点材料、钙钛矿材料、荧光材料中的一种。
所述第一发光器件101包括有机发光二极管、微型发光二极管及次毫米发光二极管中的至少一种。
所述第一发光器件101包括红色发光器件、蓝色发光器件、绿色发光器件、白色发光器件等。
请继续参阅图1A~图1H，所述显示面板100还包括：
衬底110，所述第一像素驱动电路102位于所述衬底110上，所述衬底110包括刚性衬底和柔性衬底。所述衬底110的制备材料包括玻璃、石英、陶瓷、塑料或聚合物树脂等；聚合物树脂包括聚醚砜、聚丙烯酸酯、聚芳酯、聚醚酰亚胺、聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚苯硫醚、聚烯丙基酯、聚酰亚胺、聚碳酸酯、三乙酸纤维素、醋酸丙酸纤维素中的至少一种。
像素定义层108，位于所述第一阳极1011及所述平坦层107上，所述第一发光层1012位于所述像素定义层108的像素定义区内。
进一步地，所述显示面板100还可以包括触控电极、缓冲层、封装层、彩膜层等未示出部分。
进一步地，请参阅图1H所示，所述第一走线层104包括位于不同层的多条连接走线1041，多条所述连接走线1041之间设置有绝缘层1042，多条所述连接走线1041通过所述绝缘层1042上的过孔电性连接，以降低布线密度。多条相互连接的所述连接走线1041从所述过渡显示区100b延伸至所述显示透光区100a，以实现所述第一像素驱动电路102与所述第一发光器件101的电性连接。在图1B中，所述第一走线层104仅示出位于所述过渡显示区100b的部分，所述第一走线层104位于所述显示透光区100a的部分未示出。
请继续参阅图1A~图1B，所述显示面板100还包括：
第二发光器件200，位于所述过渡显示区100b，所述第二发光器件200通过所述第一像素驱动电路102驱动发光；
第三发光器件300，位于所述主显示区100c；
第二像素驱动电路，位于所述主显示区100c，用于驱动所述第三发光器件300发光。
进一步地，所述第三发光器件300的发光面积大于所述第一发光器件101的发光面积；更进一步地，所述第三发光器件300的发光面积大于所述第二发光器件200的发光面积。
进一步地，所述显示面板100包括位于所述显示透光区100a内的第一像素单元，所述第一像素单元包括多个第一像素，每一所述第一像素包括多个子像素，所述子像素由所述第一发光器件101形成。
更进一步地，所述子像素包括发光颜色不同的第一子像素、第二子像素和第三子像素，所述第一像素包括两个所述第一子像素、两个所述第二子像素和四个所述第三子像素。其中，所述第一子像素、所述第二子像素及所述第三子像素包括红色子像素、绿色子像素、蓝色子像素、白色子像素等。具体地，所述第一子像素为红色子像素、所述第二子像素为蓝色子像素、所述第三子像素为绿色子像素。
进一步地，所述显示面板100还包括：
第二像素单元，位于所述过渡显示区100b，所述第二像素单元包括多个第二像素，所述第二像素包括多个过渡子像素，所述过渡子像素由所述第二发光器件200形成。其中，所述第二像素包括的所述过渡子像素的个数及排布方式与所述第一像素包括的所述子像素的个数及排布方式相同。
第三像素单元，位于所述主显示区100c，所述第三像素单元包括多个第三像素，所述第三像素包括多个主子像素，所述主子像素由所述第三发光器件300形成。其中，所述第三像素包括的所述主子像素的个数及排布方式与所述第一像素包括的所述子像素的个数及排布方式相同，以使所述主显示区100c、所述过渡显示区100b及所述显示透光区100a具有相近或相同的显示效果。
可以理解的，所述显示面板100可以包括多个所述显示透光区100a，多个所述显示透光区100a的位置可根据实际需求设置，在此不再进行赘述。
本申请还提供一种显示装置，包括上述任一种显示面板。
进一步地，所述显示装置还包括传感器，所述传感器正对所述显示透光区，以使所述显示装置实现指纹识别、摄像、光线感测、距离感测等功能。
具体地，所述传感器包括指纹识别传感器、摄像头、结构光传感器、飞行时间传感器、距离传感器、光线传感器等，以使所述传感器可以通过所述显示透光区采集信号，从而使所述显示装置实现屏下指纹识别、屏下摄像头、屏下面部识别、屏下距离感知等屏下传感方案。
进一步地，所述显示装置还包括触控面板，所述触控面板以内置式或外挂式的方式与所述显示面板结合，以使所述显示装置具有触控功能。
所述显示装置包括固定终端如电视、台式电脑，移动终端如手机、笔记本电脑，以及可穿戴设备如手环、VR（虚拟显示）设备、AR（增强显示）设备。
本申请实施例提供的一种显示面板及显示装置，所述显示面板100包括显示透光区100a、主显示区100c及位于所述显示透光区100a和所述主显示区100c之间的过渡显示区100b，所述显示面板100包括：第一发光器件101，位于所述显示透光区100a；第一像素驱动电路102，位于所述过渡显示区100b，电性连接于所述第一发光器件101以用于驱动所述第一发光器件101发光；信号走线层103，位于所述第一像素驱动电路102靠近所述第一发光器件101的一侧，且电性连接于所述第一像素驱动电路102；第一走线层104，位于所述信号走线层103远离所述第一像素驱动电路102的一侧，沿由所述过渡显示区100b到所述显示透光区100a的方向延伸，并连接于所述第一像素驱动电路102和所述第一发光器件101之间，所述第一走线层104与所述信号走线层103部分重叠；电容阻挡层105，位于所述第一走线层104与所述信号走线层103之间，所述电容阻挡层105包括至少一有机绝缘层1051，以改善所述显示透光区100a因寄生电容Cp导致出现显示不均的问题，改善所述显示透光区100a的显示效果。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例所提供的显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (20)

  1. 一种显示面板，其中，包括显示透光区、主显示区及位于所述显示透光区和所述主显示区之间的过渡显示区，所述显示面板包括：
    第一发光器件，位于所述显示透光区；
    第一像素驱动电路，位于所述过渡显示区，电性连接于所述第一发光器件以用于驱动所述第一发光器件发光；
    信号走线层，电性连接于所述第一像素驱动电路；
    第一走线层，沿由所述过渡显示区到所述显示透光区的方向延伸，并连接于所述第一像素驱动电路和所述第一发光器件之间，所述第一走线层与所述信号走线层部分重叠；
    电容阻挡层，位于所述第一走线层与所述信号走线层之间，所述电容阻挡层包括至少一有机绝缘层。
  2. 根据权利要求1所述的显示面板，其中，所述有机绝缘层的相对介电常数小于或等于3.8。
  3. 根据权利要求2所述的显示面板，其中，所述有机绝缘层的相对介电常数小于或等于3.3。
  4. 根据权利要求1所述的显示面板，其中，所述有机绝缘层的厚度大于或等于0.5微米且小于或等于3微米。
  5. 根据权利要求4所述的显示面板，其中，所述有机绝缘层的厚度大于或等于1.5微米且小于或等于2.5微米。
  6. 根据权利要求1所述的显示面板，其中，所述有机绝缘层的可见光透过率大于或等于85%。
  7. 根据权利要求1所述的显示面板，其中，所述有机绝缘层包括感光性树脂组合物。
  8. 根据权利要求7所述的显示面板，其中，所述感光性树脂组合物包括溶剂、添加剂、光聚合反应引发剂，以及，以选自聚酰亚胺前体结构、聚苯并恶唑前体结构、硅基前体结构、聚丙烯酸前体结构及酚醛树脂结构中的至少一种结构作为主成分的聚合物。
  9. 根据权利要求1所述的显示面板，其中，所述电容阻挡层还包括位于所述有机绝缘层的至少一侧的无机绝缘层。
  10. 根据权利要求9所述的显示面板，其中，所述无机绝缘层位于所述有机绝缘层与所述信号走线层之间，和/或，所述无机绝缘层位于所述有机绝缘层与所述第一走线层之间。
  11. 根据权利要求1所述的显示面板，其中，所述有机绝缘层包括第一有机绝缘层和第二有机绝缘层，所述第一有机绝缘层的制备材料与所述第二有机绝缘层的制备材料不同。
  12. 根据权利要求11所述的显示面板，其中，所述第一有机绝缘层与所述第二有机绝缘层具有不同的介电常数及透光率。
  13. 根据权利要求1所述的显示面板，其中，所述信号走线层包括与第一电压端连接的电源信号线。
  14. 根据权利要求1所述的显示面板，其中，所述显示面板还包括：
    第一绝缘层，位于所述第一像素驱动电路及所述信号走线层之间，所述信号走线层通过所述第一绝缘层上的过孔与所述第一像素驱动电路连接；
    平坦层，位于所述第一走线层与所述第一发光器件之间，所述第一发光器件通过所述平坦层上的过孔与所述第一走线层连接。
  15. 根据权利要求14所述的显示面板，其中，所述第一发光器件包括有机发光二极管、微型发光二极管及次毫米发光二极管中的至少一种。
  16. 一种显示装置，其中，包括显示面板，所述显示面板包括显示透光区、主显示区及位于所述显示透光区和所述主显示区之间的过渡显示区，所述显示面板包括：
    第一发光器件，位于所述显示透光区；
    第一像素驱动电路，位于所述过渡显示区，电性连接于所述第一发光器件以用于驱动所述第一发光器件发光；
    信号走线层，电性连接于所述第一像素驱动电路；
    第一走线层，沿由所述过渡显示区到所述显示透光区的方向延伸，并连接于所述第一像素驱动电路和所述第一发光器件之间，所述第一走线层与所述信号走线层部分重叠；
    电容阻挡层，位于所述第一走线层与所述信号走线层之间，所述电容阻挡层包括至少一有机绝缘层。
  17. 根据权利要求16所述的显示装置，其中，所述有机绝缘层的相对介电常数小于或等于3.8。
  18. 根据权利要求16所述的显示装置，其中，所述有机绝缘层的厚度大于或等于0.5微米且小于或等于3微米。
  19. 根据权利要求16所述的显示装置，其中，所述有机绝缘层的可见光透过率大于或等于85%。
  20. 根据权利要求16所述的显示装置，其中，还包括传感器，所述传感器正对所述显示透光区。
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