WO2022091769A1 - 光検出装置、構造体の製造方法、および光検出装置の製造方法 - Google Patents

光検出装置、構造体の製造方法、および光検出装置の製造方法 Download PDF

Info

Publication number
WO2022091769A1
WO2022091769A1 PCT/JP2021/037711 JP2021037711W WO2022091769A1 WO 2022091769 A1 WO2022091769 A1 WO 2022091769A1 JP 2021037711 W JP2021037711 W JP 2021037711W WO 2022091769 A1 WO2022091769 A1 WO 2022091769A1
Authority
WO
WIPO (PCT)
Prior art keywords
filter array
light
filters
image sensor
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/037711
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
義和 山岡
基樹 八子
篤 石川
誓 細川
拓 平澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Priority to JP2022552280A priority Critical patent/JP7304534B2/ja
Priority to CN202180069200.0A priority patent/CN116324351A/zh
Priority to EP21885888.4A priority patent/EP4239682A4/en
Publication of WO2022091769A1 publication Critical patent/WO2022091769A1/ja
Priority to US18/194,669 priority patent/US12557414B2/en
Anticipated expiration legal-status Critical
Priority to JP2023097873A priority patent/JP7607225B2/ja
Priority to JP2024176515A priority patent/JP2025010160A/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
    • G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
    • G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
    • G01J3/513—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters having fixed filter-detector pairs
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G01J2003/2826—Multispectral imaging, e.g. filter imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters

Definitions

  • the present disclosure relates to a photodetector, a method for manufacturing a structure, and a method for manufacturing a photodetector.
  • Hyperspectral cameras are used in various fields such as food inspection, biopsy, drug development, and mineral component analysis.
  • Patent Document 1 discloses an example of a hyperspectral image pickup device using compressed sensing.
  • the image pickup apparatus includes a coding element which is an array of a plurality of optical filters having different wavelength dependences of light transmittance, an image sensor for detecting light transmitted through the coding element, and a signal processing circuit.
  • a coding element is arranged on the optical path connecting the subject and the image sensor.
  • the image sensor acquires one wavelength division multiplexing image by simultaneously detecting light on which components in a plurality of wavelength regions are superimposed for each pixel.
  • the signal processing circuit utilizes the information of the spatial distribution of the spectral transmittance of the coding element and applies compressed sensing to the acquired wavelength-multiplexed image to obtain an image for each of a plurality of wavelength regions. Generate data.
  • an optical filter array having two or more transmittance peaks (that is, maximum values) in a target wavelength range is used as a coding element.
  • Patent Document 2 discloses an example of a filter array including a Fabry-Perot resonator using a dielectric multilayer film as a reflective layer.
  • Patent Documents 3 to 5 disclose examples of arrangement of a filter array and an image sensor.
  • the present disclosure provides a photodetector capable of improving imaging characteristics.
  • the light detection device is a filter array including a plurality of filters arranged two-dimensionally, each having a light incident surface and a light emitting surface, and the plurality of filters are different from each other.
  • An image sensor having a filter array including a plurality of types of filters having a transmission spectrum and a light detection surface facing the light emission surface, and a plurality of lights two-dimensionally arranged along the light detection surface.
  • An image sensor including a detection element is provided, and the distance between the light emitting surface and the light detecting surface is different for each of the filters.
  • the computer-readable recording medium includes a non-volatile recording medium such as a CD-ROM (Compact Disc-Read Only Memory).
  • the device may be composed of one or more devices. When the device is composed of two or more devices, the two or more devices may be arranged in one device, or may be separately arranged in two or more separated devices. As used herein and in the claims, "device" can mean not only one device, but also a system of multiple devices.
  • FIG. 1 is a diagram schematically showing a photodetection system according to an exemplary embodiment.
  • FIG. 2A is a diagram schematically showing an example of a filter array according to an exemplary embodiment.
  • FIG. 2B is a diagram showing an example of the spatial distribution of the transmittance of light in each of a plurality of wavelength ranges included in the target wavelength range.
  • FIG. 2C is a diagram showing an example of a transmission spectrum of a filter included in the filter array shown in FIG. 2A.
  • FIG. 2D is a diagram showing an example of transmission spectra of other filters included in the filter array shown in FIG. 2A.
  • FIG. 3A is a diagram for explaining an example of the relationship between the target wavelength region and a plurality of wavelength regions included in the target wavelength region.
  • FIG. 3A is a diagram for explaining an example of the relationship between the target wavelength region and a plurality of wavelength regions included in the target wavelength region.
  • FIG. 3B is a diagram for explaining another example of the relationship between the target wavelength region and the plurality of wavelength regions included in the target wavelength region.
  • FIG. 4A is a diagram for explaining the characteristics of the transmission spectrum of a filter in the filter array.
  • FIG. 4B is a diagram showing the results of averaging the transmission spectra shown in FIG. 4A for each wavelength range.
  • FIG. 5A is a cross-sectional view schematically showing a first example of the filter array according to the embodiment of the present disclosure.
  • FIG. 5B is a cross-sectional view schematically showing a second example of the filter array according to the embodiment of the present disclosure.
  • FIG. 5C is a cross-sectional view schematically showing a third example of the filter array according to the embodiment of the present disclosure.
  • FIG. 6 is a diagram showing an example of light transmission spectra of a double-sided DBR structure and a single-sided DBR structure when light is vertically incident.
  • FIG. 7 is a cross-sectional view schematically showing a first example of the photodetector according to the embodiment of the present disclosure.
  • FIG. 8 is a graph showing a transmission spectrum in a configuration including two media having the same refractive index and an air gap layer located between them.
  • FIG. 9A is a diagram schematically showing a modified example of the photodetector shown in FIG. 7.
  • FIG. 9B is a diagram schematically showing another modification of the photodetector shown in FIG. 7.
  • FIG. 10 is a cross-sectional view schematically showing a second example of the photodetector.
  • FIG. 9A is a diagram schematically showing a modified example of the photodetector shown in FIG. 7.
  • FIG. 9B is a diagram schematically showing another modification of the photodetector shown in FIG. 7.
  • FIG. 11 is a cross-sectional view schematically showing a third example of the photodetector.
  • FIG. 12 is a cross-sectional view schematically showing a fourth example of the photodetector.
  • FIG. 13 is a plan view schematically showing a fifth example of the photodetector.
  • FIG. 14 is a plan view schematically showing a configuration in which the filter array is rotated in an angle of 5 ° from 0 ° to 45 ° with respect to the image sensor in the XY plane.
  • FIG. 15A is a cross-sectional view schematically showing a sixth example of the photodetector.
  • FIG. 15B is a cross-sectional view showing a state in which the filter array and the substrate are removed from the photodetector shown in FIG. 15A.
  • FIG. 15C is a plan view schematically showing another example of the arrangement of the double-sided tape 30 shown in FIG. 15B.
  • FIG. 16A is a cross-sectional view schematically showing a seventh example of a photodetector.
  • FIG. 16B is a plan view showing a state in which the filter array and the substrate are removed from the photodetector shown in FIG. 16A.
  • FIG. 16C is a plan view schematically showing another example of the arrangement of the plurality of spacers shown in FIG. 16B.
  • FIG. 16D is a plan view schematically showing still another example of the arrangement of the plurality of spacers shown in FIG. 16B.
  • FIG. 16E is a plan view schematically showing still another example of the arrangement of the plurality of spacers shown in FIG.
  • FIG. 17A is a diagram for explaining an example of a process in a method for forming a spacer.
  • FIG. 17B is a diagram for explaining an example of a process in a method for forming a spacer.
  • FIG. 17C is a diagram for explaining an example of a process in a method for forming a spacer.
  • FIG. 17D is a diagram for explaining an example of a process in a method for forming a spacer.
  • FIG. 18A is a diagram for explaining an example of a process in a method of bonding a filter array and an image sensor.
  • FIG. 18B is a diagram for explaining an example of a process in a method of bonding a filter array and an image sensor.
  • FIG. 18A is a diagram for explaining an example of a process in a method of bonding a filter array and an image sensor.
  • FIG. 18B is a diagram for explaining an example of a process in a method of bonding a filter array and an image sensor.
  • FIG. 18C is a diagram for explaining an example of a process in a method of bonding a filter array and an image sensor.
  • FIG. 19 is a cross-sectional view schematically showing an eighth example of a photodetector.
  • FIG. 20 is a cross-sectional view schematically showing a ninth example of a photodetector.
  • FIG. 21 is a diagram schematically showing transmission spectra of a red filter, a green filter, and a blue filter.
  • FIG. 22 is a cross-sectional view schematically showing a tenth example of the photodetector.
  • FIG. 23A is a cross-sectional view schematically showing a modified example of the photodetector shown in FIG. 22.
  • FIG. 23B is a cross-sectional view schematically showing another modification of the photodetector shown in FIG. 22.
  • FIG. 24A is a cross-sectional view schematically showing an eleventh example of a photodetector.
  • FIG. 24B is a cross-sectional view schematically showing a twelfth example of the photodetector.
  • FIG. 24C is a cross-sectional view schematically showing a thirteenth example of the photodetector.
  • FIG. 25 is a cross-sectional view schematically showing a 14th example of a photodetector.
  • FIG. 26 is a cross-sectional view schematically showing a fifteenth example of a photodetector.
  • FIG. 24A is a cross-sectional view schematically showing an eleventh example of a photodetector.
  • FIG. 24B is a cross-sectional view schematically showing a twelfth example of the photodetector.
  • FIG. 24C is
  • FIG. 27 is a cross-sectional view schematically showing a sixteenth example of a photodetector.
  • FIG. 28 is a cross-sectional view schematically showing a 17th example of a photodetector.
  • FIG. 29 is a cross-sectional view schematically showing an 18th example of a photodetector.
  • FIG. 30 is a cross-sectional view schematically showing a 19th example of a photodetector.
  • FIG. 31 is a cross-sectional view schematically showing a twentieth example of the photodetector.
  • Patent Document 1 discloses an image pickup device capable of generating a high-resolution multi-wavelength image, that is, an image for each of a plurality of wavelength ranges.
  • an image of light from an object is encoded and imaged by an optical element called a "coding element".
  • the coding element has, for example, a plurality of regions arranged two-dimensionally. Each transmission spectrum of at least two of the plurality of regions has a maximum value of transmittance in a plurality of wavelength regions within the wavelength region to be imaged.
  • the plurality of regions may be arranged corresponding to, for example, a plurality of pixels of the image sensor.
  • the data of each pixel includes information in a plurality of wavelength ranges.
  • the image data acquired by imaging is compressed image data in which wavelength information is compressed. Therefore, it is only necessary to hold the two-dimensional data, and the amount of data can be suppressed. For example, even when the capacity of the recording medium is limited, it is possible to acquire moving image data for a long time.
  • a multi-wavelength image is generated by reconstructing a plurality of images corresponding to a plurality of wavelength regions from an image acquired by imaging.
  • the coding element can be realized, for example, by a filter array including a plurality of filters arranged two-dimensionally.
  • Each of the plurality of filters may include, for example, the structure of a so-called Fabry-Perot cavity including an interference layer.
  • the Fabry-Perot resonator for example, the structure disclosed in Patent Document 2 can be adopted.
  • the plurality of filters may be designed so that the transmission spectrum of each filter has a plurality of peaks in the wavelength range to be imaged. Multiple filters with different thicknesses of the interference layer have different transmission spectra.
  • Patent Documents 3 to 5 disclose examples of arrangement of filter arrays and image sensors.
  • the filter array is integrated on the image sensor. In such a configuration, if the configuration of the filter array is changed, the manufacturing process is also changed, resulting in high cost.
  • the filter array and the image sensor are adhered with a gap between them. In such a configuration, interference fringes such as Newton's rings appear in the captured image due to the interference of light generated between the filter array and the image sensor. As a result, the imaging characteristics deteriorate.
  • the filter array and the image sensor are adhered without a gap between them. However, if the filter array and / or the image sensor has a warp, there is a possibility that a gap will be created even if an attempt is made to bond without a gap.
  • the light detection device includes a filter array having a light incident surface and a light emitting surface on the opposite side thereof, and an image sensor having a light detecting surface facing the light emitting surface.
  • the filter array includes a plurality of types of filters having different transmission spectra within a specific wavelength range. The distance between the light emitting surface and the photodetecting surface differs depending on the transmission spectrum of the filter. Since the distance between the light emitting surface and the light detecting surface is non-uniform, it is possible to suppress the appearance of the influence of interference fringes on the captured image.
  • the photodetector can be manufactured at low cost.
  • the photodetector according to the embodiment of the present disclosure can be applied not only to a hyperspectral camera but also to a general color camera that acquires images of, for example, three primary colors.
  • the photodetector according to the embodiment of the present disclosure will be briefly described.
  • the light detection device is a filter array including a plurality of filters arranged two-dimensionally, each having a light incident surface and a light emitting surface, and the plurality of filters transmit differently from each other.
  • the photodetector according to the second item is the photodetector according to the first item, wherein each of the plurality of types of filters has an interference layer having a first surface and a second surface located on opposite sides of each other. It has a resonance structure including a reflective layer provided on the first surface. The thickness of the interference layer varies depending on the transmission spectrum of the filter.
  • the transmission spectrum of each of the plurality of types of filters has a maximum value of transmittance at each of two or more wavelengths included in a specific wavelength region.
  • the image sensor has sensitivity in the specific wavelength range.
  • This photodetector can acquire multi-wavelength images.
  • the photodetector according to the third item is the photodetector according to the first item, wherein the plurality of types of filters include two or more types of color filters.
  • This photodetector can acquire multi-wavelength images.
  • At least one of the plurality of types of color filters includes an antireflection film on the light emitting surface.
  • the plurality of types of filters are irregularly arranged in the photodetector according to any one of the first to fourth items.
  • this photodetector it is possible to further suppress the appearance of interference fringes in the captured image. Further, when acquiring a multi-wavelength image, it is possible to reduce the restoration error of the multi-wavelength image.
  • the photodetector according to the sixth item is the photodetector according to any one of the first to fifth items, in which the minimum distance between the light emitting surface and the light detection surface is 0.1 ⁇ m or more and 200 ⁇ m or less. be.
  • the photodetector according to the seventh item is the photodetector according to any one of the first to sixth items, wherein the plurality of filters face each of the plurality of photodetectors.
  • each filter In this photodetector, the light that has passed through each filter can be incident on one photodetector.
  • the photodetector according to the eighth item is the photodetector according to any one of the first to sixth items, wherein at least one of the plurality of filters is adjacent to two of the plurality of photodetectors. It has a portion facing each part of the photodetector.
  • the photodetector according to the ninth item is the photodetector according to any one of the first to eighth items, in which the light incident surface and the light detection surface of the plurality of filters are parallel to each other.
  • the distance between the filter array and the image sensor can be reduced without contacting each other.
  • the photodetector according to the tenth item is the photodetector according to any one of the first to eighth items, in which the light incident surface and the light detection surface of the plurality of filters are not parallel to each other.
  • the photodetector according to the eleventh item is the photodetector according to any one of the first to tenth items, wherein the plurality of filters are used in the first direction and the first.
  • the photodetectors are arranged two-dimensionally along a second direction rotated counterclockwise from one direction by a predetermined angle, and the plurality of photodetectors are arranged counterclockwise from the third direction and the third direction. They are arranged two-dimensionally along a fourth direction rotated by a predetermined angle.
  • the angle formed by the first direction and the third direction is 1/4 or more and 1/2 or less of the predetermined angle.
  • the photodetector according to the twelfth item is the photodetector according to the eleventh item, and the predetermined angle is 90 degrees.
  • the filter array and the image sensor have the same tendency of warpage.
  • the distance between the filter array and the image sensor can be reduced without contacting each other.
  • the filter array and the image sensor have a warp of the opposite tendency.
  • the photodetector according to the fifteenth item is the photodetector according to any one of the first to the fourteenth items, and includes a substrate on the light incident surface of the plurality of filters.
  • the step of removing the substrate can be omitted by using the substrate provided with the filter array as a component.
  • the photodetector according to the sixteenth item is the photodetector according to the fifteenth item, wherein the substrate is provided with an antireflection film on a surface opposite to the surface on the side of the filter array.
  • the photodetector according to the seventeenth item is, in the photodetector according to any one of the first to the sixteenth items, at least a part of the peripheral region located around the light emitting surface of the plurality of filters.
  • a double-sided tape for bonding to at least a part of a peripheral region located around the light detection surface of the image sensor is provided.
  • the arrangement of the filter array and the image sensor can be fixed.
  • the photodetector according to the eighteenth item is sandwiched between the filter array and the image sensor in the photodetector according to any one of the first to the sixteenth items, and the light emitting surface of each filter and the light.
  • a plurality of spacers that define the distance from the detection surface are provided. At least a part of the light emitting surface and at least a part of the light detecting surface of the plurality of filters are adhered with a transparent adhesive.
  • the arrangement of the filter array and the image sensor can be fixed.
  • the photodetector according to the nineteenth item is arranged at a position where at least one of the plurality of spacers overlaps with at least one of the plurality of photodetectors in a plan view in the photodetector according to the eighteenth item.
  • the photodetector according to the twentieth item is a plurality of first microlenses in which the image sensor is arranged in each of the plurality of photodetectors in the photodetector according to any one of the first to nineteenth items. To prepare for.
  • the light transmitted through the filter can be efficiently incident on the photodetector by the first microlens.
  • the photodetector according to the twenty-first item is the photodetector according to any one of the first to the twentieth items, wherein the filter array is arranged on the light emission surface of the plurality of filters, respectively. Equipped with a microlens.
  • the light transmitted through the filter can be efficiently incident on the photodetector by the second microlens.
  • the minimum distance between the light emitting surface and the light detecting surface is larger than 0.1 ⁇ m.
  • the light detection device is the light detection device according to any one of the 1st to 21st items, when the target wavelength range is ⁇ 1 or more and ⁇ 2 or less, the light emission surface and the light detection.
  • the minimum distance to the surface is greater than ⁇ 1/4 .
  • the imaging characteristics in the target wavelength range can be improved.
  • the light detection device is the light detection device according to any one of the first to the twenty-first items, when the target wavelength range is ⁇ 1 or more and ⁇ 2 or less, the light emission surface and the light detection.
  • the minimum distance to the surface is greater than ⁇ 2/4 .
  • the imaging characteristics in the target wavelength range can be further improved.
  • the photodetector according to the 25th item is the bottom of the photodetector according to any one of the first to the 24th items, which has a transparent cover for supporting the filter array and a first region in which the image sensor is provided. And a package of the bottom that extends from a second region located around the first region and has a side wall that surrounds the image sensor. The transparent cover and the package seal the filter array and the image sensor.
  • This photodetector can prevent dust, dust, or moisture from getting inside the photodetector.
  • the photodetector according to the 26th item further includes a signal processing circuit in the photodetector according to any one of the first to the 25th items.
  • the signal processing circuit restores a plurality of spectroscopic images for each of four or more wavelength regions from the compressed image encoded by the filter array.
  • the method for manufacturing a structure according to the 27th item is a filter array including a plurality of filters arranged two-dimensionally and having uneven surfaces, wherein the plurality of filters have different transmission spectra from each other.
  • the method for manufacturing a photodetector according to the 28th item includes a step of preparing a structure manufactured by the method for manufacturing a structure according to the 27th item and an image sensor having a photodetection surface, and the filter array. This includes a step of bonding the filter array and the image sensor via the plurality of spacers with the uneven surface and the light detection surface of the image sensor facing each other.
  • the filter array and the image sensor can be bonded together in a state of being almost parallel to each other.
  • the method for manufacturing a photodetector according to the item 29 is the peripheral region located around the photodetector surface and / or the photodetector surface of the image sensor in the method for manufacturing the photodetector according to the item 28.
  • a plurality of adhesives are arranged in the image sensor, and in the step of bonding the filter array and the image sensor, the filter array is pushed onto the image sensor via the plurality of spacers and the plurality of adhesives. Including hitting.
  • a plurality of adhesives can be cured and the filter array and the image sensor can be bonded together.
  • all or part of a circuit, unit, device, member or part, or all or part of a functional block in a block diagram is, for example, a semiconductor device, a semiconductor integrated circuit (IC), or an LSI (lage scale integration). ) Can be performed by one or more electronic circuits.
  • the LSI or IC may be integrated on one chip, or may be configured by combining a plurality of chips.
  • functional blocks other than the storage element may be integrated on one chip.
  • it is called LSI or IC, but the name changes depending on the degree of integration, and it may be called system LSI, VLSI (very large scale integration), or ULSI (ultra large scale integration).
  • Field Programmable Gate Array (FPGA) which is programmed after the LSI is manufactured, or reconfigurable logistic device, which can reconfigure the connection relationship inside the LSI or set up the circuit partition inside the LSI, can also be used for the same purpose.
  • FPGA Field Programmable Gate Array
  • circuits, units, devices, members or parts can be performed by software processing.
  • the software is recorded on a non-temporary recording medium such as one or more ROMs, optical disks, hard disk drives, etc., and when the software is run by a processor, the functions identified by the software It is performed by a processor and peripherals.
  • the system or device may include one or more non-temporary recording media on which the software is recorded, a processor, and the required hardware device, such as an interface.
  • FIG. 1 is a diagram schematically showing a photodetection system 400 according to an exemplary embodiment of the present disclosure.
  • the photodetection system 400 includes an optical system 40, a filter array 10, an image sensor 60, and a signal processing circuit 200.
  • the filter array 10 has the same function as the "coding element" disclosed in Patent Document 1. Therefore, the filter array 10 can also be referred to as a "coding element”.
  • the optical system 40 and the filter array 10 are arranged in an optical path of light incident from the object 70. In the example shown in FIG. 1, the filter array 10 is arranged between the optical system 40 and the image sensor 160.
  • FIG. 1 illustrates an apple as an example of the object 70.
  • the object 70 is not limited to an apple, but can be any object.
  • the signal processing circuit 200 generates image data for each of a plurality of wavelength ranges included in a specific wavelength range (hereinafter, also referred to as “target wavelength range”) based on the image data generated by the image sensor 60.
  • This image data is referred to as "spectroscopic image data" in the present specification.
  • the number of wavelength regions included in the target wavelength region is N (N is an integer of 4 or more).
  • the generated spectroscopic image data in a plurality of wavelength regions are referred to as separated images 220W 1 , 220W 2 , ..., 220WN , and these are collectively referred to as separated images 220.
  • a signal indicating an image that is, a set of signals representing pixel values of a plurality of pixels constituting the image is also simply referred to as an "image”.
  • the filter array 10 includes a plurality of translucent filters arranged in rows and columns.
  • the filter array 10 is an optical element in which the transmission spectrum of light, that is, the wavelength dependence of the light transmittance differs depending on the filter.
  • the filter array 10 modulates the intensity of the incident light for each wavelength range and passes the light.
  • the filter array 10 is arranged in the vicinity of the image sensor 60.
  • the “neighborhood” means that the image of the light from the optical system 40 is close enough to be formed on the surface of the filter array 10 in a state of being clear to some extent.
  • the device including the filter array 10 and the image sensor 60 is referred to as a “photodetector 300”.
  • the optical system 40 includes at least one lens. Although shown as one lens in FIG. 1, the optical system 40 may be composed of a combination of a plurality of lenses. The optical system 40 forms an image on the image pickup surface of the image sensor 60 via the filter array 10.
  • the image sensor 60 includes a plurality of photodetecting elements arranged two-dimensionally.
  • the image sensor 60 may be, for example, a CCD (Charge-Coupled Device) sensor, a CMOS (Complementary Metal Oxide Sensor) sensor, or an infrared array sensor.
  • the photodetector may include, for example, a photodiode.
  • the image sensor 60 may be, for example, a monochrome type sensor or a color type sensor.
  • the target wavelength range may be arbitrarily determined. The target wavelength range is not limited to the visible wavelength range, and may be an ultraviolet, near-infrared, mid-infrared, far-infrared, or microwave wavelength range.
  • each of the plurality of photodetectors is arranged to face one of the plurality of filters.
  • Each of the plurality of photodetectors has sensitivity to light in the wavelength range to be imaged.
  • each of the plurality of photodetectors has the substantial sensitivity required to detect light in the wavelength range to be imaged.
  • the external quantum efficiency of the photodetector in the wavelength range can be 1% or more.
  • the external quantum efficiency of the photodetector may be 10% or more.
  • the external quantum efficiency of the photodetector may be 20% or more.
  • the photodetector will also be referred to as a "pixel".
  • the signal processing circuit 200 may be an integrated circuit including, for example, a processor and a storage medium such as a memory.
  • the signal processing circuit 200 generates data of a plurality of separated images 220 including information in a plurality of wavelength ranges based on the image 120 acquired by the image sensor 60. Details of the method of processing the image signals of the plurality of separated images 220 and the signal processing circuit 200 will be described later.
  • the signal processing circuit 200 may be incorporated in the photodetector 300, or may be a component of the signal processing device electrically connected to the photodetector 300 by wire or wirelessly.
  • the filter array 10 is arranged in an optical path of light incident from an object, and outputs the intensity of the incident light by modulating it for each wavelength. This process with a filter array or coding element is referred to herein as "coding".
  • FIG. 2A is a diagram schematically showing an example of the filter array 10.
  • the filter array 10 includes a plurality of filters arranged two-dimensionally. Each filter has an individually set transmission spectrum.
  • the transmission spectrum is represented by the function T ( ⁇ ), where the wavelength of the incident light is ⁇ .
  • the transmission spectrum T ( ⁇ ) can take a value of 0 or more and 1 or less.
  • the filter array 10 has 48 rectangular filters arranged in 6 rows and 8 columns. This is just an example, and in actual use, more filters may be provided. The number may be, for example, about the same as the number of pixels of the image sensor 60. The number of filters included in the filter array 10 is determined depending on the application, for example, in the range of tens to tens of millions.
  • FIG. 2B is a diagram showing an example of the spatial distribution of the transmittance of light in each of a plurality of wavelength regions W 1 , W 2 , ..., And Wi included in the target wavelength region.
  • the difference in shade of each filter represents the difference in transmittance. The lighter the filter, the higher the transmittance, and the darker the filter, the lower the transmittance.
  • the spatial distribution of light transmittance differs depending on the wavelength range.
  • 2C and 2D are diagrams showing examples of transmission spectra of the filter A1 and the filter A2 included in the plurality of filters of the filter array 10 of FIG. 2A, respectively.
  • the transmission spectrum of the filter A1 and the transmission spectrum of the filter A2 are different from each other.
  • the transmission spectrum of the filter array 10 differs depending on the filter. However, the transmission spectra of all filters do not necessarily have to be different.
  • the transmission spectra of at least two or more of the plurality of filters are different from each other. That is, the filter array 10 includes two or more filters having different transmission spectra from each other.
  • the number of transmission spectrum patterns of the plurality of filters included in the filter array 10 may be equal to or greater than the number i of the wavelength regions included in the target wavelength region.
  • the filter array 10 may be designed so that the transmission spectra of more than half of the filters are different.
  • the target wavelength range W can be set in various ranges depending on the application.
  • the target wavelength region W may be, for example, a wavelength region of visible light of about 400 nm to about 700 nm, a wavelength region of near infrared rays of about 700 nm to about 2500 nm, or a wavelength region of near ultraviolet rays of about 10 nm to about 400 nm.
  • the target wavelength region W may be a radio wave region such as mid-infrared, far-infrared, terahertz wave, or millimeter wave.
  • the wavelength range used is not always the visible light range.
  • visible light not only visible light but also invisible light such as near-ultraviolet rays, near-infrared rays, and radio waves are referred to as "light" for convenience.
  • i is an arbitrary integer of 4 or more, and the target wavelength region W is equally divided into i , and each is defined as a wavelength region W 1 , a wavelength region W 2 , ..., And a wavelength region Wi.
  • a plurality of wavelength ranges included in the target wavelength range W may be arbitrarily set.
  • the bandwidth may be non-uniform depending on the wavelength range. There may be gaps between adjacent wavelength ranges.
  • the bandwidth differs depending on the wavelength range, and there is a gap between two adjacent wavelength ranges.
  • the plurality of wavelength ranges may be different from each other, and the method of determining the wavelength ranges is arbitrary.
  • the wavelength division number i may be 3 or less.
  • FIG. 4A is a diagram for explaining the characteristics of the transmission spectrum of a filter in the filter array 10.
  • the transmission spectrum has a plurality of maximum values P1 to a maximum value P5 and a plurality of minimum values with respect to the wavelength within the target wavelength region W.
  • the maximum value and the minimum value of the light transmittance in the target wavelength region W are normalized to be 1.
  • the transmission spectrum has a maximum value in a wavelength region such as the wavelength region W2 and the wavelength region Wi - 1 .
  • the transmission spectrum of each filter has a maximum value in at least two plurality of wavelength regions from the plurality of wavelength regions W1 to the wavelength region Wi.
  • the maximum value P1, the maximum value P3, the maximum value P4, and the maximum value P5 are 0.5 or more.
  • the filter array 10 transmits a large amount of components in a certain wavelength range from the incident light, and does not transmit so much components in another wavelength range. For example, for light in k wavelengths out of i wavelengths, the transmittance is greater than 0.5, and for light in the remaining ik wavelengths, the transmittance is 0.5. Can be less than. k is an integer satisfying 2 ⁇ k ⁇ i. If the incident light is white light that evenly contains all the wavelength components of visible light, the filter array 10 filters the incident light for each filter and has a plurality of discrete peaks of intensity with respect to the wavelength. It is modulated to and these multi-wavelength light is superimposed and output.
  • FIG. 4B is a diagram showing, as an example, the result of averaging the transmission spectra shown in FIG. 4A for each of the wavelength region W 1 , the wavelength region W 2 , ..., And the wavelength region Wi.
  • the averaged transmittance is obtained by integrating the transmission spectrum T ( ⁇ ) for each wavelength region and dividing by the bandwidth of that wavelength region.
  • the value of the transmittance averaged for each wavelength region in this way is referred to as the transmittance in the wavelength region.
  • the transmittance is remarkably high in the three wavelength regions having the maximum value P1, the maximum value P3, and the maximum value P5.
  • the transmittance exceeds 0.8 in the two wavelength ranges having the maximum value P3 and the maximum value P5.
  • the resolution in the wavelength direction of the transmission spectrum of each filter can be set to about the bandwidth of a desired wavelength range.
  • the width of the range having a value equal to or higher than the average value of the minimum value closest to the maximum value and the maximum value is the width of the desired wavelength range. It can be set to about the bandwidth.
  • the transmission spectrum is decomposed into frequency components by, for example, Fourier transform, the value of the frequency component corresponding to the wavelength range becomes relatively large.
  • the filter array 10 typically has a plurality of filters divided in a grid pattern, as shown in FIG. 2A. Some or all of these filters have different transmission spectra from each other.
  • the wavelength distribution and spatial distribution of the light transmittance of the plurality of filters included in the filter array 10 may be, for example, a random distribution or a quasi-random distribution.
  • each filter in the filter array 10 can be considered as a vector element having a value of 0 to 1, for example, depending on the light transmittance.
  • the value of the vector element is 0, and when the transmittance is 1, the value of the vector element is 1.
  • a set of filters lined up in a row or column can be thought of as a multidimensional vector with values from 0 to 1. Therefore, it can be said that the filter array 10 includes a plurality of multidimensional vectors in the column direction or the row direction.
  • the random distribution means that any two multidimensional vectors are independent, that is, they are not parallel.
  • the quasi-random distribution means that a configuration that is not independent among some multidimensional vectors is included. Therefore, in the random distribution and the quasi-random distribution, the value of the light transmittance in the first wavelength range in each filter belonging to the set of filters arranged in one row or column included in the plurality of filters is used as an element.
  • the vector and the vector whose element is the value of the light transmittance in the first wavelength region in each filter belonging to the set of filters arranged in other rows or columns are independent of each other.
  • the light transmittance of the second wavelength region in each filter belonging to the set of filters arranged in one row or column included in the plurality of filters are independent of each other.
  • the mutual spacing of the plurality of filters included in the filter array 10 may be substantially the same as the pixel pitch of the image sensor 60.
  • the resolution of the coded light image emitted from the filter array 10 substantially matches the resolution of the pixels.
  • the cell pitch may be made finer according to the distance.
  • the filter array 10 has a grayscale transmittance distribution in which the transmittance of each filter can take any value of 0 or more and 1 or less. However, it does not necessarily have to be a grayscale transmittance distribution.
  • a binary-scale transmittance distribution may be adopted in which the transmittance of each filter can take either a value of approximately 0 or approximately 1.
  • each filter transmits most of the light in at least two wavelength regions of the plurality of wavelength regions included in the target wavelength region, and transmits most of the light in the remaining wavelength regions. I won't let you.
  • "most" refers to about 80% or more.
  • a part of all filters, for example half of the filters, may be replaced with a transparent filter.
  • a transparent filter transmits light in the wavelength region Wi from all the wavelength regions W1 included in the target wavelength region with high transmittance.
  • the high transmittance is, for example, 0.8 or more.
  • the plurality of transparent filters may be arranged, for example, in a checkerboard pattern. That is, in the two arrangement directions of the plurality of filters in the filter array 10, filters having different light transmittances depending on the wavelength and transparent filters may be arranged alternately. In the example shown in FIG. 2A, the two arrangement directions are the horizontal direction and the vertical direction.
  • the data showing the spatial distribution of the spectral transmittance of the filter array 10 is acquired in advance based on the design data or the actual measurement calibration, and is stored in the storage medium included in the signal processing circuit 200. This data is used for arithmetic processing described later.
  • the filter array 10 may be configured using, for example, a multilayer film, an organic material, a diffraction grating structure, or a microstructure containing a metal.
  • a multilayer film for example, a dielectric multilayer film or a multilayer film including a metal layer may be used.
  • each cell may be formed so that at least one of the thickness, material, and stacking order of each multilayer film is different. This makes it possible to realize different spectral characteristics depending on the cell.
  • the multilayer film it is possible to realize sharp rising and falling in the spectral transmittance.
  • Compositions using organic materials can be realized by making the pigments or dyes contained different depending on the cell, or by laminating different materials.
  • a configuration using a diffraction grating structure can be realized by providing a diffraction structure having a different diffraction pitch or depth for each cell.
  • a microstructure containing a metal When a microstructure containing a metal is used, it can be produced by utilizing spectroscopy due to the plasmon effect.
  • the term "multi-wavelength” means, for example, a wavelength range larger than the three-color wavelength range of RGB acquired by a normal color camera, that is, four or more wavelength ranges.
  • the number of this wavelength range can be, for example, about 4 to 100.
  • the number of wavelength regions is also referred to as "spectral band number”. Depending on the application, the number of spectral bands may exceed 100.
  • the data to be obtained is the separated image 220, and the data is represented as f.
  • f is data in which image data f 1 , f 2 , ..., And f w of each band are integrated.
  • the horizontal direction of the image is the x direction
  • the vertical direction of the image is the y direction.
  • the number of pixels in the x direction of the image data to be obtained is n and the number of pixels in the y direction is m
  • each of the image data f 1 , f 2 , ..., F w is two-dimensional data of n ⁇ m pixels. Is.
  • the data f is three-dimensional data having the number of elements n ⁇ m ⁇ w.
  • the number of elements of the data g of the image 120 encoded and multiplexed by the filter array 10 is n ⁇ m.
  • the data g can be represented by the following equation (1).
  • f 1 , f 2 , ..., F w are data having n ⁇ m elements. Therefore, strictly speaking, the vector on the right side is a one-dimensional vector having n ⁇ m ⁇ w rows and one column.
  • the vector g is converted into a one-dimensional vector having n ⁇ m rows and one column, and is represented and calculated.
  • the matrix H represents a transformation in which each component f 1 , f 2 , ..., Wh of the vector f is encoded and intensity-modulated with different coding information for each wavelength region, and the sum of them is added. Therefore, H is a matrix of n ⁇ m rows and n ⁇ m ⁇ w columns.
  • the signal processing circuit 200 utilizes the redundancy of the image included in the data f and obtains a solution by using a compressed sensing method. Specifically, the obtained data f is estimated by solving the following equation (2).
  • f' represents the estimated data of f.
  • the first term in parentheses in the above equation represents the amount of deviation between the estimation result Hf and the acquired data g, the so-called residual term.
  • the sum of squares is used as the residual term, but the absolute value, the square root of the sum of squares, or the like may be used as the residual term.
  • the second term in parentheses is a regularization term or a stabilization term described later.
  • Equation (2) means finding f that minimizes the sum of the first term and the second term.
  • the signal processing circuit 200 can converge the solution by recursive iterative operation and calculate the final solution f'.
  • the first term in parentheses in the equation (2) means an operation for finding the sum of squares of the differences between the acquired data g and Hf in which the estimation process f is system-transformed by the matrix H.
  • the second term ⁇ (f) is a constraint condition in the regularization of f, and is a function that reflects the sparse information of the estimated data. As a function, it has the effect of smoothing or stabilizing the estimated data.
  • the regularization term can be represented by, for example, the Discrete Cosine Transform (DCT), Wavelet Transform, Fourier Transform, or Total Variation (TV) of f. For example, when the total variation is used, stable guess data that suppresses the influence of noise in the observation data g can be obtained.
  • DCT Discrete Cosine Transform
  • TV Total Variation
  • the sparsity of the object 70 in the space of each regularization term depends on the texture of the object 70. You may choose a regularization term that makes the texture of the object 70 more sparse in the space of the regularization term. Alternatively, a plurality of regularization terms may be included in the operation.
  • ⁇ is a weighting factor. The larger the weighting coefficient ⁇ , the larger the amount of redundant data to be reduced, and the higher the compression ratio. The smaller the weighting factor ⁇ , the weaker the convergence to the solution.
  • the weighting factor ⁇ is set to an appropriate value at which f converges to some extent and does not cause overcompression.
  • FIGS. 5A to 5C are cross-sectional views schematically showing first to third examples of the filter array 10 according to the embodiment of the present disclosure, respectively. In these cross-sectional views, for simplicity, five filters 100 contained in one row are shown.
  • the filter array 10 is supported by the substrate 20.
  • the filter array 10 includes a plurality of filters 100 arranged two-dimensionally in a square grid pattern.
  • all the filters 100 included in the filter array 10 have a resonance structure.
  • the resonance structure means a structure in which light having a certain wavelength forms a standing wave inside and exists stably.
  • each resonance structure shown in FIG. 5A has an interference layer 12 having a first surface 12s 1 and a second surface 12s 2 located on opposite sides, a first reflective layer 14a provided on the first surface 12s 1 , and a first surface. 2 includes a second reflective layer 14b provided on the surface 12s 2 .
  • the reflectance of the light of the target wavelength range W of each of the first surface 12s 1 and the second surface 12s 2 can be, for example, 80% or more. The reflectance may be lower than 80% but may be designed to be 40% or higher.
  • the thickness of the first reflective layer 14a and the thickness of the second reflective layer 14b can be designed to be equal.
  • the plurality of filters 100 having different thicknesses of the interference layers 12 have different transmission spectra in the target wavelength region W.
  • the transmission spectrum of each resonance structure shown in FIG. 5A has two or more sharp peaks in the target wavelength region W as described later.
  • each of the first reflective layer 14a and the second reflective layer 14b is a distributed Bragg reflector (Distributed) in which a plurality of high refractive index layers and a plurality of low refractive index layers are alternately laminated. It is formed from Bragg Reflector (DBR).
  • DBR Bragg Reflector
  • Each of the first reflective layer 14a and the second reflective layer 14b may be formed of a metal thin film.
  • the DBR includes one or more pairs of high-refractive index layers and low-refractive index layers having different refractive indexes.
  • the refractive index of the high refractive index layer is higher than that of the low refractive index layer.
  • the DBR has a wavelength range with high reflectance due to Bragg reflection due to the periodic laminated structure. The wavelength range is called a stop band. When the number of the above pair layers is increased, the reflectance of the stopband approaches 100%.
  • ⁇ be the wavelength in the target wavelength range W
  • n H be the refractive index of the high refractive index layer
  • n L be the refractive index of the low refractive index layer.
  • the target wavelength range W is in the range of the wavelength ⁇ i or more and the wavelength ⁇ f or less
  • the DBR can be determined by changing the thickness of the plurality of high refractive index layers and the plurality of low refractive index layers in a stepwise manner . It is possible to include the pair layer corresponding to the wavelength ⁇ f from the pair layer corresponding to. As a result, the DBR can efficiently reflect all the light in the target wavelength range W.
  • the high-refractive index layer and the low-refractive index layer contained in each of the first reflective layer 14a and the second reflective layer 14b, and the interference layer 12 are formed of, for example, a material having a low absorption rate for light in the target wavelength region W. obtain.
  • a material is, for example, a group consisting of SiO 2 , Al 2 O 3 , SiO x N y , Si 3 N 4 , Ta 2 O 5 , and TIO 2 . It can be at least one selected from.
  • the target wavelength range W is in the infrared region
  • such materials may be found in, for example, the above-mentioned SiO 2 , Al 2 O 3 , SiO x N y , Si 3 N 4 , Ta 2 O 5 , and TIO 2 .
  • it may be at least one selected from the group consisting of single crystal Si, polycrystalline Si, and amorphous Si.
  • the substrate 20 may be formed of, for example, a material having a low absorption rate for light in the target wavelength region W.
  • such a material is selected from the group consisting of SiO 2 , ITO, Al 2 O 3 , GaN, Nb 2 O 5 , Ta 2 O 5 , and SiC. It can be at least one.
  • such materials are, for example, in addition to the above-mentioned SiO 2 , ITO, Al 2 O 3 , GaN, Nb 2 O 5 , Ta 2 O 5 , and SiC.
  • each of the first reflective layer 14a and the second reflective layer 14b can be, for example, 100 nm or more and 900 nm or less.
  • the thickness of the interference layer 12 can be, for example, 10 nm or more and 500 nm or less.
  • the thickness of the substrate 20 can be, for example, 0.1 mm or more and 1 mm or less.
  • each resonance structure shown in FIG. 5B includes an interference layer 12 and a first reflective layer 14a provided on the first surface 12s 1 .
  • the second example shown in FIG. 5B differs from the first example shown in FIG. 5A in that the second reflective layer 14b is not provided on the second surface 12s 2 .
  • the transmission spectrum of each resonance structure shown in FIG. 5B has two or more wide peaks in the target wavelength region W as described later.
  • the second surface 12s 2 is exposed to the outside and is in contact with air.
  • a transparent layer may be further laminated on the second surface 12s 2 of the interference layer 12.
  • the reflectance (hereinafter, referred to as “first reflectance”) for light in the target wavelength region W on the first surface 12s 1 can be, for example, 80% or more.
  • the first reflectance may be lower than 80% but may be designed to be 40% or higher.
  • the reflectance (referred to as “second reflectance”) for light in the target wavelength region W on the second surface 12s 2 is lower than the first reflectance, and can be, for example, 1% or more and less than 30%. There is a certain difference of 10% or more between the first reflectance and the second reflectance.
  • the resonance structure shown in FIG. 5A is referred to as a “two-sided DBR structure”, and the resonance structure shown in FIG. 5B is referred to as a “one-sided DBR structure”.
  • the light in the interference layer 12 is reflected by the first surface 12s 1 and the second surface 12s 2 unless the exact position of the surface reflecting the light is an issue. It shall be done.
  • a part of the light incident on the first reflective layer 14a or the second reflective layer 14b from the interference layer 12 actually penetrates into the first reflective layer 14a or the second reflective layer 14b, and a plurality of light particles are present. Reflected at the interface between the high index layer and multiple low index layers. The interface on which light is reflected depends on the wavelength. However, for convenience of explanation, these lights are treated as being reflected by the first surface 12s 1 and the second surface 12s 2 .
  • some filters 100 have a double-sided DBR structure and some other filters 100 have a one-sided DBR structure.
  • the ratio of the one-sided DBR structure to all the DBR structures contained in the filter array 10 can be, for example, 10% or more and 90% or less.
  • the proportion of the one-sided DBR structure may be smaller than the proportion of the two-sided DBR structure, may be equal to the proportion of the two-sided DBR structure, or may be greater than the proportion of the two-sided DBR structure.
  • the arrangement of the two-sided DBR structure and the one-sided DBR structure may be regular or irregular.
  • FIG. 6 is a diagram showing an example of light transmission spectra of a double-sided DBR structure and a single-sided DBR structure when light is vertically incident.
  • the target wavelength range W is 450 nm or more and 850 nm or less.
  • the solid line shown in FIG. 6 represents the transmission spectrum of the double-sided DBR structure, and the broken line shown in FIG. 6 represents the transmission spectrum of the one-sided DBR structure.
  • the transmission spectra of the two-sided DBR structure and the one-sided DBR structure have maximum transmittance values at each of two or more wavelengths in the target wavelength region W.
  • a filter having such a transmission spectrum is referred to as a "multimode filter".
  • the wavelength at which the transmittance shows the maximum value shifts to the short wavelength side when the interference layer 12 is thinned, and shifts to the long wavelength side when the interference layer 12 is thickened.
  • the characteristics of the two-sided DBR structure and the one-sided DBR structure differ in the following points.
  • each peak is sharp, the maximum transmittance is about 1.0, and the minimum transmittance is about 0.02.
  • the maximum transmittance is about 0.5
  • the minimum transmittance is about 0.1.
  • the one-sided DBR structure has an increased transmittance baseline as compared to the two-sided DBR structure.
  • the average transmittance in the target wavelength region W of the one-sided DBR structure is about 26%
  • the average transmittance in the target wavelength region W of the two-sided DBR structure is about 14%.
  • the one-sided DBR structure has about twice the average transmittance as compared to the two-sided DBR structure. As described above, the one-sided DBR structure can suppress the light amount loss at the time of imaging.
  • a plurality of types of multimode filters having different transmission spectra may be irregularly arranged in the target wavelength region W.
  • An irregular arrangement is an arrangement that does not show clear regularity or periodicity, and is also an aperiodic arrangement.
  • the irregular arrangement may be, for example, an arrangement according to the above-mentioned concept of random distribution or quasi-random distribution.
  • the filter array 10 includes millions of filters 100 that are two-dimensionally arranged, and the millions of filters 100 include nine types of irregularly arranged multimode filters. Nine types of multimode filters can be arranged with high randomness.
  • the filter array 10 having such a highly random filter array can reduce the restoration error of the separated image 220. Due to the irregular arrangement, adjacent filters may be of the same type. However, such cases are considered rare and do not pose a major problem.
  • the filter array 10 according to the present embodiment may include a filter that does not have the above-mentioned resonance structure.
  • the filter array 10 according to the present embodiment may include a filter having no wavelength dependence of light transmittance, such as a transparent filter or an ND filter (Neutral Density Filter).
  • the filter 100 having a two-sided DBR structure and / or a one-sided DBR structure is also referred to as a “Fabry-Perot filter”.
  • the Fabry-Perot filter is a type of interference filter.
  • another type of interference filter such as a color separation filter composed of a diffraction grating or the like can be used.
  • each of the filter array 10 and the image sensor 60 is described as including a 5 ⁇ 5 unit cell arranged two-dimensionally.
  • each of the filter array 10 and the image sensor 60 may include, for example, millions of two-dimensionally arranged unit cells.
  • the structure shown is only exemplary and the number and placement of unit cells can be determined arbitrarily.
  • FIG. 7 is a cross-sectional view schematically showing a first example of the photodetector 300 according to the embodiment of the present disclosure.
  • the cross-sectional view is a cross-sectional view of the filter array 10 and the image sensor 60 for a certain row.
  • the structure shown in FIG. 7 is a partial structure of the photodetector 300.
  • FIG. 7 shows X-axis, Y-axis, and Z-axis that are orthogonal to each other.
  • the direction of the arrow on the X-axis is referred to as the + X direction, and the opposite direction is referred to as the -X direction.
  • the + Z direction side is also referred to as "upper”, and the -Z direction side is also referred to as “lower”. These axes do not limit the arrangement and orientation of the photodetector 300, and the actual arrangement and orientation of the photodetector 300 is arbitrary.
  • the photodetector 300 according to the present embodiment includes a filter array 10, a substrate 20 that supports the filter array 10, and an image sensor 60.
  • the configuration of the filter array 10 and the substrate 20 shown in FIG. 7 is the same as the configuration of the filter array 10 and the substrate 20 shown in FIG. 5C except that the filter array 10 and the substrate 20 are turned upside down. Instead of the configuration shown in FIG. 5C, the configuration shown in FIG. 5A or FIG. 5B may be adopted.
  • the substrate 20 is used in the process of manufacturing the photodetector 300. The substrate 20 is not always necessary, but if the substrate 20 is not removed in the manufacture of the photodetector 300, the substrate 20 is included in the photodetector 300.
  • the filter array 10 includes a plurality of filters 100 arranged two-dimensionally in a square grid along the XY plane.
  • the plurality of filters 100 include a plurality of types of multimode filters having different transmission spectra within the target wavelength region W.
  • the thickness of the interference layer 12 varies depending on the transmission spectrum of the multimode filter.
  • the array pitches of the plurality of filters 100 in the X and Y directions are all equal.
  • the plurality of types of multimode filters are arranged irregularly according to, for example, the above-mentioned concept of random distribution or quasi-random distribution.
  • the filter array 10 has a light incident surface 10s 1 and a light emitting surface 10s 2 on the opposite side thereof.
  • the light incident surface 10s 1 is formed by a collection of light incident surfaces of a plurality of filters 100.
  • the light emitting surface 10s 2 is formed by a collection of light emitting surfaces of a plurality of filters 100.
  • the light incident surface 10s 1 is flat.
  • the light incident surface in the plurality of filters 100 forms a flat surface without a step.
  • the light emitting surface 10s 2 has irregularities, that is, steps.
  • the light emitting surface of the plurality of filters 100 forms an uneven surface. This unevenness is caused by the difference in thickness depending on the filter 100.
  • the difference in the thickness of each filter 100 is caused by the difference in the thickness of the interference layer or the presence or absence of the second reflective layer 14b.
  • the substrate 20 is provided on the light incident surface 10s 1 of the filter array 10.
  • the image sensor 60 has a photodetection surface 60s facing the light emission surface 10s 2 , and includes a plurality of photodetection elements 60a two-dimensionally arranged in a square grid along the light detection surface 60s.
  • the photodetection surface 60s is flat.
  • the plurality of photodetecting elements 60a have sensitivity in the target wavelength region W.
  • the plurality of photodetecting elements 60a face each of the plurality of filters 100.
  • the arrangement pitches of the plurality of photodetecting elements 60a in the X direction and the Y direction are all equal.
  • the arrangement pitches of the photodetection elements 60a in the X direction and the Y direction may be different.
  • the arrangement pitch of the photodetection element 60a can be, for example, 1 ⁇ m or more and 10 ⁇ m or less. In the first example shown in FIG. 7, the arrangement pitch of the filter 100 is designed to be equal to the arrangement pitch of the photodetection element 60a.
  • Each of the plurality of photodetecting elements 60a includes a plurality of microlenses 40a directly above the plurality of photodetecting elements 60a. The microlens 40a efficiently incidents the light transmitted through the filter 100 on the photodetection element 60a.
  • the light incident surface 10s 1 and the photodetected surface 60s are parallel to each other.
  • the light incident surface 10s 1 and the light detection surface 60s are parallel to each other does not mean that they are exactly parallel to each other, but the normal direction of the light incident surface 10s 1 and the normal line of the light detection surface 60s. It means that the angle formed by the direction is 10 ° or less.
  • the normal direction of the light incident surface 10s 1 is perpendicular to the light incident surface 10s 1 and away from the filter array 10.
  • the normal direction of the photodetection surface 60s is perpendicular to the photodetection surface 60s and away from the image sensor 60.
  • the light reflected by the object 70 enters the light incident surface 10s 1 of the filter array 10 mainly along the ⁇ Z direction via the substrate 20, passes through the filter array 10, and the light emitting surface 10s of the filter array 10 Emit from 2 .
  • the light emitted from the light emitting surface 10s 2 of the filter array 10 is incident on the light detecting surface 60s of the image sensor 60.
  • the distance between the light emitting surface 10s 2 and the light detecting surface 60s is different for each multimode filter.
  • the photodetector 300 of the present embodiment is manufactured by fixing the structure and the image sensor 60 shown in FIG. 5C so that the uneven surface of the filter array 10 faces the photodetection surface 60s. Since the distance between the light emitting surface 10s 2 and the light detecting surface 60s becomes non-uniform, even if multiple reflections of light occur between the light emitting surface 10s 2 and the light detecting surface 60s, the captured image is affected by light interference. It is possible to suppress the appearance of interference fringes. Therefore, the imaging characteristics of the photodetector 300 can be improved.
  • the irregular arrangement of the plurality of types of multi-mode filters can not only reduce the restoration error of the plurality of separated images 220, but also further suppress the appearance of interference fringes in the captured image.
  • the filter array 10 and the image sensor 60 can be brought close to each other by arranging the second reflective layer 14b instead of the substrate 20 so as to face the photodetection surface 60s of the image sensor 60.
  • the distance between the light detection surface 60s and the portion of the light emission surface 10s 2 closest to the light detection surface 60s (hereinafter, may be referred to as “minimum distance dm”) is, for example, 0.1 ⁇ m or more and 200 ⁇ m or less. possible.
  • the F value of the optical system 40 shown in FIG. 1 is 16 or less, and the arrangement pitch of the photodetection elements 60a may be about 6 ⁇ m.
  • the depth of focus is about 200 ⁇ m, so if the minimum distance between the light emitting surface 10s 2 and the light detection surface 60s is within the above range, most of the light that has passed through each filter 100 is detected. It can be incident on a region located directly below each filter 100 in the surface 60s. In the first example shown in FIG. 7, one photodetection element 60a is located in the region.
  • the interference may occur between the two. Due to the influence of this interference, the spectrum of light detected by the photodetection element 60a and the transmission spectrum of the multimode filter may deviate from each other.
  • the interference that can occur here depends on the distance d between the light emitting surface 10s 2 and the light detecting surface 60s.
  • the transmittance becomes maximum at / m1.
  • m 1 is an integer of 1 or more.
  • m 2 is an integer greater than or equal to 0.
  • FIG. 8 is a graph showing a transmission spectrum in a configuration including two media having the same refractive index and an air gap layer located between them.
  • the solid line, the dotted line, and the broken line shown in FIG. 8 represent the case where the thickness d of the gap layer is 100 nm, 125 nm, and 150 nm, respectively.
  • n 1.5
  • the transmittance gradually increases, and when the wavelength is shorter than the wavelength at which the interference of the basic mode occurs, the transmittance toward the maximum value. It increases sharply.
  • the photodetection element of each pixel will detect the light in which the influence of the above interference is added to the transmission spectrum of the multimode filter. That is, there is a possibility that the spectrum of light detected in each pixel and the transmission spectrum of the multimode filter are significantly different. As a result, there is a possibility that the imaging characteristics may be deteriorated, such as an increase in the restoration error of the separated image 220.
  • the target wavelength range is the wavelength range of visible light, that is, about 400 nm or more and about 700 m or less.
  • the minimum distance dm is 0.1 ⁇ m or less, the transmittance may be low due to the influence of interference over the entire target wavelength range.
  • the minimum distance dm is larger than 0.1 ⁇ m , that is, when there is no pixel having a distance dm of 0.1 ⁇ m or less, the influence of interference near a wavelength of 400 nm in the target wavelength range should be reduced. Can be done. Therefore, the imaging characteristics can be improved as compared with the case where the minimum distance dm is 0.1 ⁇ m or less.
  • the minimum distance dm is larger than 0.125 ⁇ m
  • the influence of interference in the wavelength range of 400 nm or more and 500 nm or less in the target wavelength range can be reduced, and the imaging characteristics can be further improved.
  • the minimum distance dm is larger than 0.150 ⁇ m
  • the influence of interference in the wavelength range of 400 nm or more and 600 nm or less in the target wavelength range can be reduced, and the imaging characteristics can be further improved.
  • the imaging characteristics can be improved by making the minimum distance dm larger than ⁇ 1/4 .
  • the imaging characteristics can be further improved.
  • the transmittance shown in FIG. 8 oscillates in a shorter cycle with a change in wavelength in the target wavelength region due to the influence of interference.
  • this vibration width is sufficiently smaller than, for example, each wavelength region Wi included in the target wavelength region shown in FIG. 3A, vibrations having a short period are averaged and canceled in each wavelength region Wi , so that a plurality of separations are made.
  • the image 220 is hardly affected by interference, and the imaging characteristics can be further improved.
  • the lower limit wavelength ⁇ 1 and the upper limit wavelength ⁇ 2 in the target wavelength range may be the lower limit wavelength and the upper limit wavelength of the wavelength component included in the separated image 220, respectively.
  • the lower limit wavelength ⁇ 1 and the upper limit wavelength ⁇ 2 in the target wavelength range may be the lower limit wavelength and the upper limit wavelength of light that can be detected by the image sensor 60 in the light detection device 300, respectively.
  • the lower limit wavelength ⁇ 1 and the upper limit wavelength ⁇ 2 in the target wavelength range may be the lower limit wavelength and the upper limit wavelength of the light incident on the image sensor 60 in the light detection device 300, respectively.
  • the filter array 10 and the image sensor 60 may have a warp.
  • the substrate 20 that supports the filter array 10 may also have a warp in the same direction as the filter array 10.
  • a difference of about 1 ⁇ m may occur in the Z direction between the central portion and the end portion due to the warp.
  • the filter array 10 and the image sensor 60 may have the same tendency to warp each other. That is, both the filter array 10 and the image sensor 60 may have an upwardly convex or a downwardly convex warp.
  • the filter array 10 and the image sensor 60 may have warpages that tend to be opposite to each other.
  • one of the filter array 10 and the image sensor 60 may have an upwardly convex warp and the other may have a downwardly convex warp.
  • the filter array 10 and the image sensor 60 have warpages of opposite tendencies, the distance between the light emitting surface 10s 2 and the photodetecting surface 60s becomes more non-uniform, so that interference fringes appear in the captured image. It can be further suppressed.
  • the warpage of the filter array 10 and the image sensor 60 is ignored.
  • FIG. 9A is a diagram schematically showing a modified example of the photodetector 300 shown in FIG. 7.
  • the photodetector 300 shown in FIG. 9A differs from the photodetector 300 shown in FIG. 7 in that the filter array 10 includes a plurality of microlenses 40b arranged on the light emitting surfaces of the plurality of filters 100, respectively. be.
  • the plurality of microlenses 40b arranged on the light emitting surface 10s 2 face each of the plurality of microlenses 40a arranged on the light detecting surface 60s.
  • each filter 100 With such a configuration, most of the light that has passed through each filter 100 can be focused or collimated by the microlens 40b and incident on the photodetection element 60a via the microlens 40a underneath.
  • the microlenses 40a and 40b By using the microlenses 40a and 40b together, the light passing through each filter 100a can be efficiently incident on the corresponding photodetection element 60a.
  • FIG. 9B is a diagram schematically showing another modification of the photodetector 300 shown in FIG. 7.
  • the difference between the photodetector 300 shown in FIG. 9B and the photodetector 300 shown in FIG. 9A is that a plurality of microlenses 40a are not arranged on the photodetection surface 60s. Even if light is efficiently incident on the photodetection element 60a by using a plurality of microlenses 40b arranged on the light emitting surface 10s 2 instead of arranging the plurality of microlenses 40a as in this modification. good.
  • the plurality of microlenses 40a arranged on the photodetection surface 60s are also referred to as “plurality of first microlenses", and the plurality of microlenses 40b provided on the light emission surface 10s2 are referred to as “plurality of second microlenses”. Also called “lens”.
  • FIG. 10 is a cross-sectional view schematically showing a second example of the photodetector 300.
  • the structure shown in FIG. 10 is different from the structure shown in FIG. 7 in that the substrate 20 is provided with the antireflection film 22 on the surface opposite to the surface supporting the filter array 10.
  • the antireflection film 22 can suppress the reflection of light generated at the interface between the substrate 20 and air in the first example shown in FIG. 7. Therefore, the photodetection efficiency of the photodetector 300 can be improved. Further, the antireflection film 22 can moderate the warp of the filter array 10 and the substrate 20 and reverse the direction of the warp. By adjusting the warpage of the filter array 10 and the substrate 20 with the antireflection film 22, it is possible to further suppress the appearance of interference fringes in the captured image.
  • FIG. 11 is a cross-sectional view schematically showing a third example of the photodetector 300.
  • the structure shown in FIG. 11 differs from the structure shown in FIG. 7 in that the arrangement relationship between the filter array 10 and the image sensor 60 is deviated along one direction parallel to the photodetection surface 60s.
  • the direction is the X direction.
  • the magnitude of the deviation is smaller than the arrangement pitch of the filter 100 or the arrangement pitch of the photodetection element 60a.
  • the plurality of filters 100 and the plurality of photodetecting elements 60a do not face each other on a one-to-one basis.
  • each of the plurality of filters 100 overlaps two adjacent photodetecting elements 60a when viewed from the Z direction.
  • each of those filters 100 has a portion facing a portion of each of two adjacent photodetectors 60a.
  • a part of the light transmitted through each filter 100 is incident on a certain photodetection element 60a, and the other part is incident on another photodetection element 60a next to the light detection element 60a. Therefore, it is possible to improve the randomness of the spectrum of the light detected by the plurality of photodetecting elements 60a. As a result, the plurality of separated images 220 can be restored more accurately.
  • the arrangement pitch of the filter 100 and the arrangement pitch of the photodetection element 60a are equal, but these arrangement pitches may be different.
  • the arrangement pitch of the plurality of filters 100 and / or the arrangement pitch of the plurality of photodetecting elements 60a may be non-uniform. With such an arrangement, when the light emitting surface 0s 2 of the filter array 10 and the photodetection surface 60s of the image sensor 60 face each other, the plurality of filters 100 and the plurality of photodetection elements 60a do not face each other on a one-to-one basis. You can get the configuration. In such a configuration, some filters 100 and some photodetection elements 60a may face each other on a one-to-one basis. In this embodiment, at least one of the plurality of filters 100 may have a portion facing each part of two adjacent photodetecting elements 60a.
  • FIG. 12 is a cross-sectional view schematically showing a fourth example of the photodetector 300.
  • the fourth example shown in FIG. 12 differs from the first example shown in FIG. 7 in that the light incident surface 10s 1 of the filter array 10 and the light detection surface 60s of the image sensor 60 are not parallel to each other. ..
  • the normal direction of the light incident surface 10s 1 and the normal direction of the photodetection surface 60s intersect.
  • the angle at which these normal directions intersect can be, for example, 30 ° or more and 45 ° or less.
  • the distance between the light emission surface 10s 2 and the light detection surface 60s becomes more non-uniform. As a result, it is possible to further suppress the appearance of interference fringes in the captured image.
  • FIG. 13 is a plan view schematically showing a fifth example of the photodetector 300.
  • the plan view is a view of the photodetector 300 from the side of the light incident surface 10s 1 of the filter array 10.
  • the illustration of the substrate 20 is omitted.
  • the thick line represents the filter array 10 including the 5 ⁇ 5 filter 100
  • the thin line represents the image sensor 60 including the 5 ⁇ 5 photodetector 60a.
  • the fifth example shown in FIG. 13 differs from the first example shown in FIG. 7 in that the filter array 10 is rotated by a certain angle with respect to the image sensor 60 in the XY plane.
  • the plurality of filters 100 included in the filter array 10 use the first vector D 1 and the second vector D 2 obtained by rotating the first vector D 1 counterclockwise by 90 ° as basic vectors, and these basic vectors are used. They are arranged two-dimensionally along the direction.
  • the plurality of photodetecting elements 60a in the image sensor 60 use the third vector D 3 and the fourth vector D 4 obtained by rotating the third vector D 3 counterclockwise by 90 ° as basic vectors, and these basic vectors are used. They are arranged two-dimensionally along the direction.
  • the magnitudes of the first and second vectors D 1 and D 2 are equal to the array pitch of the filters 100 in the directions of the first and second vectors D 1 and D 2 , respectively.
  • the magnitudes of the third and fourth vectors D 3 and D 4 are equal to the arrangement pitch of the photodetectors 60a in the directions of the third and fourth vectors D 3 and D 4 , respectively.
  • the magnitudes of the first vector D 1 to the fourth vector D 4 are all equal.
  • the first vector D 1 and the third vector D 3 are parallel to each other, and the second vector D 2 and the fourth vector D 4 are parallel to each other.
  • the third vector D 3 intersects the first vector D 1 and the fourth vector D 4 intersects the second vector D 2 .
  • FIG. 14 is a plan view schematically showing a configuration in which the filter array 10 is rotated with respect to the image sensor 60 at an angle of 5 ° from 0 ° to 45 ° in the XY plane.
  • the configuration of the rotation angle from 45 ° to 90 ° is equal to the configuration of the rotation angle from 45 ° to 0 ° shown in FIG.
  • a 55 ° rotation angle configuration is equivalent to a 35 ° rotation angle configuration
  • an 80 ° rotation angle configuration is equivalent to a 10 ° rotation angle configuration.
  • moire that is, regular light and darkness appears in the portion where the filter array 10 and the image sensor 60 overlap.
  • the moire pattern becomes finer. Moire is difficult to see in the range of rotation angle of 25 ° or more and 45 ° or less.
  • Moire may be suppressed as much as possible in order to obtain a higher quality hyperspectral image. Even if the filter array 10 and the image sensor 60 are arranged without being rotated, an error of several degrees of rotation angle may actually occur. As shown in FIG. 14, remarkable moiré appears even at a rotation angle of 5 °. On the other hand, when the filter array 10 and the image sensor 60 are arranged at a rotation angle of 25 ° or more and 45 ° or less, the moire hardly changes as shown in FIG. 14 even if an error of several degrees occurs. And it is hard to see. Therefore, it is possible to suppress an increase in moire caused by an arrangement error.
  • the plurality of filters 100 and the plurality of photodetecting elements 60a do not face each other on a one-to-one basis, as in the third example shown in FIG. Therefore, it is possible to improve the randomness of the spectrum of the light detected by the plurality of photodetecting elements 60a. As a result, the plurality of separated images 220 can be restored more accurately.
  • the angle formed by the first vector D 1 and the second vector D 2 and the angle formed by the third vector D 3 and the fourth vector are 90 °.
  • the angle corresponds to an array of square grids.
  • the angle formed by the first vector D 1 and the second vector D 2 and the angle formed by the third vector D 3 and the fourth vector may be a predetermined angle other than 90 °.
  • an angle of 60 ° corresponds to an array of triangular grids.
  • the angle of rotation at which moire is difficult to see is 1/4 or more and 1/2 or less of the predetermined angle.
  • FIG. 15A is a cross-sectional view schematically showing a sixth example of the photodetector 300.
  • FIG. 15B is a plan view showing a state in which the filter array 10 and the substrate 20 are removed from the photodetector 300 shown in FIG. 15A.
  • the filter array 10 has a peripheral region 10p located around the light emitting surface 10s 2
  • the image sensor 60 has a peripheral region 60p located around the light detecting surface 60s.
  • the peripheral region 10p of the filter array 10 and the peripheral region 60p of the image sensor 60 are flat.
  • FIG. 15A is a cross-sectional view schematically showing a sixth example of the photodetector 300.
  • FIG. 15B is a plan view showing a state in which the filter array 10 and the substrate 20 are removed from the photodetector 300 shown in FIG. 15A.
  • the filter array 10 has a peripheral region 10p located around the light emitting surface 10s 2
  • the image sensor 60 has a peripheral region 60p located around the light
  • the photodetector 300 includes a double-sided tape 30 for bonding the peripheral region 10p of the filter array 10 and the peripheral region 60p of the image sensor 60.
  • the double-sided tape 30 has a shape extending along a direction perpendicular to the light detection surface 60s, and as shown in FIG. 15B, the light emission surface 10s 2 and the light detection surface 60s. It has a shape that surrounds the space between and.
  • the double-sided tape 30 defines the distance between the light emitting surface of each filter 100 and the light detecting surface 60s.
  • the height of the double-sided tape 30 may be designed so that the distance between the light emitting surface 10s 2 and the light detecting surface 60s satisfies the above-mentioned minimum distance.
  • FIG. 15C is a plan view schematically showing another example of the arrangement of the double-sided tape 30 shown in FIG. 15B.
  • the four corners of the peripheral region 10p of the filter array 10 and the four corners of the peripheral region 60p of the image sensor 60 are bonded by the double-sided tape 30.
  • at least a part of the peripheral region 10p of the filter array 10 and at least a part of the peripheral region 60p of the image sensor 60 are bonded by the double-sided tape 30.
  • the arrangement of the filter array 10 and the image sensor 60 can be fixed.
  • FIG. 16A is a cross-sectional view schematically showing a seventh example of the photodetector 300.
  • FIG. 16B is a plan view showing a state in which the filter array 10 and the substrate 20 are removed from the photodetector 300 shown in FIG. 16A.
  • the photodetector 300 includes a plurality of spacers 32 sandwiched between the filter array 10 and the image sensor 60.
  • the light emitting surface 10s 2 and the light detecting surface 60s are adhered to each other with a transparent adhesive 34.
  • the transparent adhesive 34 transmits light in the wavelength region Wi from all the wavelength regions W1 included in the target wavelength region with high transmittance.
  • the high transmittance is, for example, 0.8 or more.
  • the plurality of spacers 32 have rigidity and more accurately define the distance between the light emitting surface and the light detecting surface 60s of each filter 100.
  • the spacer 32 can be, for example, a photospacer that defines the height of the space in which the liquid crystal material is injected in a liquid crystal display.
  • the photospacer can be formed from, for example, a negative photoresist SU8 (manufactured by Nippon Kayaku Co., Ltd.).
  • the transparent adhesive 34 can be formed from, for example, an optical path bonding adhesive GA700L (manufactured by NTT Advanced Technology). The method of forming the spacer 32 will be described later.
  • each spacer 32 in the XY plane When the size of the cross section of each spacer 32 in the XY plane is larger than the size of the photodetection element 60a, each spacer 32 is supported by the light emitting surface of the filter 100 and the top of the microlens 40a. Even if the size of the cross section of each spacer 32 is similar to the size of the photodetector 60a, some spacers 32 are supported by the light emitting surface of the filter 100 and the top of the microlens 40a. In either case, the spacer 32 can more accurately define the distance between the light emitting surface of each filter 100 and the light detecting surface 60s.
  • the plurality of spacers 32 are irregularly arranged.
  • the distribution density of the spacer 32 can be designed to be uniform for each region of a predetermined size (for example, a region corresponding to a 3 ⁇ 3 unit cell).
  • the size of the cross section of the plurality of spacers 32 may be uniform or non-uniform.
  • the size of the cross section of the spacer 32 may be larger than, for example, the size of the photodetection element 60a, or may be about the same.
  • the size of the cross section of some spacers 32 may be smaller than the size of the photodetector 60a.
  • the spacer 32 may or may not have translucency.
  • at least one of the plurality of spacers 32 may be arranged at a position overlapping the microlens 40a.
  • the plurality of spacers 32 make the distance between the light emitting surface and the photodetected surface 60s of each filter 100 more accurate regardless of whether they are provided near the peripheral region 60p of the image sensor 60 or on the photodetected surface 60s. Helps to prescribe in.
  • the spacer 32 provided on the photodetection surface 60s and overlapping the microlens 40a also helps to improve the randomness of the spectrum of light detected by the photodetection element 60a. This is because if the refractive index of the spacer 32 is different from the refractive index of the transparent adhesive 34, a part of the light incident on the photodetection element 60a is modulated by the spacer 32.
  • the space between the light emitting surface 10s 2 and the light detecting surface 60s is filled with the transparent adhesive 34. Therefore, the mechanical strength of the photodetector 300 can be improved. As a result, the reliability of the photodetector 300 can be improved. Further, since the heat generated from the image sensor 60 is transferred to the filter array 10 and the substrate 20 via the transparent adhesive 34, the heat can be efficiently released to the outside. In the present embodiment, at least a part of the light emitting surface 10s 2 and at least a part of the light detecting surface 60s are adhered with the transparent adhesive 34. Alternatively, as shown in FIGS. 15A to 15C, at least a part of the peripheral region 10p of the filter array 10 and at least a part of the peripheral region 60p of the image sensor 60 may be bonded with an adhesive. In this case, the adhesive does not have to be transparent.
  • FIG. 16C is a plan view schematically showing another example of the arrangement of the plurality of spacers 32 shown in FIG. 16B.
  • the plurality of spacers 32 are provided not on the peripheral region 60p of the image sensor 60 but on the photodetection surface 60s of the image sensor 60.
  • the arrangement of the plurality of spacers 32 shown in FIG. 16C is effective.
  • FIG. 16D is a plan view schematically showing still another example of the arrangement of the plurality of spacers 32 shown in FIG. 16B.
  • a plurality of spacers 32 are provided near the peripheral region 60p of the image sensor 60 rather than the photodetection surface 60s of the image sensor 60.
  • 16D shows a case where it is not necessary to improve the randomness of the spectrum of the light detected by the photodetection element 60a and it is necessary to more accurately define the distance between the light emission surface and the light detection surface 60s of each filter 100.
  • the arrangement of the plurality of spacers 32 is effective.
  • FIG. 16E is a plan view schematically showing still another example of the arrangement of the plurality of spacers 32 shown in FIG. 16B.
  • the plurality of spacers 32 and the plurality of adhesives 35 are arranged in the peripheral region 60p of the image sensor 60.
  • the adhesive 35 has a columnar shape like the spacer 32.
  • the adhesive 35 arranged in the peripheral region 60p does not have to be transparent. This is because the peripheral region 60p does not contribute to light detection. When viewed from the normal direction of the light incident surface 10s 1 , the adhesive 35 and the spacer 32 do not overlap each other.
  • the distance between the light emitting surface 10s 2 of the filter array 10 and the light detection surface 60s of the image sensor 60 can be accurately defined, and the filter array 10 and the image sensor 60 are bonded together in a more parallel state. Will be possible.
  • the spacer 32 and the transparent adhesive 34 are not arranged on the photodetection surface 60s, the light is not attenuated by the spacer 32 and the transparent adhesive 34. It is not necessary to improve the randomness of the spectrum of the light detected by the photodetection element 60a, it is not necessary to improve the mechanical strength by the transparent adhesive 34, and the distance between the light emission surface 10s 2 and the light detection surface 60s is further increased.
  • the arrangement of the plurality of spacers 32 shown in FIG. 16E is effective.
  • the plurality of spacers 32 and the plurality of adhesives 35 are alternately arranged in the peripheral region 60p of the image sensor 60.
  • the plurality of spacers 32 and the plurality of adhesives 35 do not need to be arranged alternately, and two or more spacers 32 may be continuously arranged, or two or more adhesives 35 may be continuously arranged. It may have been done.
  • four spacers 32 may be arranged at the four corners of the peripheral region 60p of the image sensor 60, and a plurality of adhesives 35 may be arranged at other portions.
  • the spacer 32 has a rectangular cross-sectional shape, but may have a circular cross-sectional shape.
  • the adhesive 35 has a circular shape, but may be oval. When it is not necessary to accurately define the distance between the light emitting surface 10s 2 and the light detecting surface 60s, the adhesive 35 and the spacer 32 may overlap each other when viewed from the normal direction of the light incident surface 10s 1 . good.
  • a method for forming the spacer 32 for example, a method of forming a plurality of spacers 32 on the light detection surface 60s of the image sensor 60 can be considered.
  • the method may cause the following problems. It is assumed that the image sensor 60 having a plurality of spacers 32 formed on the photodetection surface 60s and the filter array 10 having the light emission surface 10s 2 which is an uneven surface are bonded to each other.
  • the distance between the light detection surface 60s of the image sensor 60 and the light emission surface 10s 2 of the filter array 10 is different for each pixel, or the peripheral region 10p of the filter array 10 and the peripheral region 60p of the image sensor 60 Since the distance varies from place to place, some spacers 32 may not come into contact with the light emitting surface 10s 2 of the filter array 10. In such a configuration, there is a problem that the mechanical strength of the bonded filter array 10 and the image sensor 60 is lowered, and the accuracy of defining the distance between the light emitting surface 10s 2 and the photodetecting surface 60s is lowered. Can occur. In order to solve this problem, the present inventors have come up with a method of forming a plurality of spacers 32 on the light emitting surface 10s 2 of the filter array 10.
  • FIGS. 17A to 17D are diagrams for explaining an example of a process in a method for forming a spacer.
  • a filter array 10 having an uneven surface is prepared.
  • the filter array 10 is supported by the substrate 20, but the substrate 20 may not be present.
  • the liquid photoresist 32A is applied to the light emitting surface 10s 2 of the filter array 10 by, for example, spin coating. Since the spin-coated photoresist 32A absorbs or fills the irregular irregularities of the light emitting surface 10s 2 , the outermost surface of the photoresist 32A becomes flat. A photoresist can be formed on the uneven surface of the filter array 10 by the step described with reference to FIG. 17B.
  • a plurality of spacers 32 having the same height are formed on the light emitting surfaces 10s 2 of the filter array 10.
  • the fact that the heights are uniform means that the ends of the plurality of spacers 32 are located at substantially the same height in the vertical direction.
  • the size of the cross section of each spacer 32 is smaller than or equal to the size of one pixel, the length of the spacer in the vertical direction differs for each pixel, while the length of the plurality of spacers 32 in the filter array 10 is different.
  • the heights are the same. As shown in FIG.
  • the heights of the plurality of spacers 32 are uniform in the filter array 10 even when the size of the cross section of each spacer 32 is larger than the size of one pixel.
  • a plurality of spacers can be formed on the uneven surface of the filter array 10 by the steps described with reference to FIGS. 17C or 17D.
  • a plurality of spacers 32 are formed on the light emitting surface 10s 2 of the filter array 10.
  • a plurality of spacers 32 may be formed on the light emitting surface 10s 2 and / or the peripheral region 10p of the filter array 10.
  • the filter array 10 in which a plurality of spacers 32 are formed is also referred to as a “structure”.
  • FIGS. 18A to 18C are diagrams for explaining an example of a process in a method of bonding the filter array 10 and the image sensor 60.
  • a filter array 10 in which a plurality of spacers 32 are formed on the light emitting surface 10s 2 and an image sensor in which a plurality of adhesives 35 are arranged in dots on the photodetection surface 60s. 60 and are prepared.
  • the adhesive 35 can be formed from, for example, a photocurable resin or a thermosetting resin.
  • the photocurable resin can be an ultraviolet curable resin or a visible light curable resin.
  • the adhesive 35 has a substantially semi-elliptical spherical shape. The shape of the adhesive 35 is arbitrary.
  • the filter array 10 has a plurality of spacers 32 and a plurality of spacers 32 in a state where the light emitting surface 10s of the filter array 10 and the light detection surface 60s of the image sensor 60 face each other. It is pressed against the image sensor 60 via the adhesive 35.
  • the spacer 32 and the adhesive 35 may be arranged so as not to overlap each other when viewed from a direction perpendicular to the light incident surface 10s1 .
  • the adhesive 35 is pressed by the filter array 10 to have a substantially cylindrical shape. By pressing, the diameter of the adhesive 35 shown in FIG. 18B becomes larger than the diameter of the adhesive 35 shown in FIG. 18A.
  • the adhesive 35 is formed from the photocurable resin, as shown in FIG. 18C, a plurality of adhesives 35 are irradiated with light via the filter array 10 and the substrate 20.
  • the arrow shown in FIG. 18C indicates the state of light irradiation.
  • the photocurable resin is an ultraviolet curable resin
  • the irradiation light is ultraviolet light
  • the photocurable resin is a visible light curable resin
  • the irradiation light is visible light.
  • the plurality of adhesives 35 are cured by light irradiation, and the filter array 10 and the image sensor 60 are bonded together in a state of being substantially parallel to each other.
  • the adhesive 35 is formed of a thermosetting resin
  • the plurality of adhesives 35 are cured by heating, and the filter array 10 and the image sensor 60 are bonded together in a substantially parallel state.
  • the filter array 10 in which the plurality of spacers 32 are formed on the light emitting surface 10s 2 and the image sensor 60 in which the plurality of adhesives 35 are arranged on the light detection surface 60s are bonded together. Be done. Not limited to this example, the filter array 10 in which a plurality of spacers 32 are formed on the light emitting surface 10s 2 and / or the peripheral region 10p, and the plurality of adhesives 35 are arranged on the photodetection surface 60s and / or the peripheral region 60p.
  • the image sensor 60 may be bonded to the image sensor 60.
  • the peripheral region 10p of the filter array 10 and the peripheral region 60p of the image sensor 60 face each other.
  • FIG. 19 is a cross-sectional view schematically showing an eighth example of the photodetector 300.
  • the eighth example shown in FIG. 19 differs from the seventh example shown in FIG. 16A in that the photodetector 300 includes a transparent cover 50 and a package 80, and has a light emitting surface 10s 2 and a light detecting surface 60s. The transparent adhesive 34 between them is not provided.
  • the transparent cover 50 transmits light in the wavelength region Wi from all the wavelength regions W1 included in the target wavelength region with high transmittance.
  • the high transmittance is, for example, 0.8 or more.
  • the transparent cover 50 has a convex portion 50p.
  • the convex portion 50p of the transparent cover 50 supports the filter array 10 and the substrate 20 via the transparent adhesive 36.
  • the transparent cover 50 can be made of, for example, glass or plastic.
  • the package 80 includes a bottom 82, a side wall 84, and a plurality of pairs of lead electrodes 80a penetrating the bottom 82.
  • the bottom portion 82 has a first region 82a in which the image sensor 60 is provided.
  • the side wall 84 extends from the second region 82b located around the first region 82a of the bottom portion 82 in the direction perpendicular to the bottom portion 82, and has a shape surrounding the image sensor 60.
  • the plurality of pairs of lead electrodes 80a are electrically connected to a plurality of photodetecting elements 60a included in the image sensor 60, respectively. The photocurrent generated by each photodetection element 60a can be taken out from the pair of lead electrodes 80a.
  • the upper surface of the side wall 84 of the package 80 and the peripheral region of the transparent cover 50 facing the upper surface are joined.
  • a soldering material or a brazing material, or a photocurable resin or a thermosetting resin can be used.
  • the transparent cover 50 and the package 80 seal the filter array 10 and the image sensor 60. This sealing can prevent dust, dirt, or moisture from entering the inside of the photodetector 300. As a result, the reliability of the photodetector 300 can be improved.
  • the photodetector 300 shown in FIG. 19 is manufactured by covering the package 80 including the image sensor 60 and a plurality of pairs of lead electrodes 80a with a transparent cover 50 supporting the filter array 10 and the substrate 20 via a transparent adhesive 36. can do. Since the package 80 is covered with the transparent cover 50, the photodetector 300 can be manufactured by a simple process at low cost.
  • the plurality of spacers 32 are provided on the light emitting surface 10s 2 before covering the package 80 with the transparent cover 50.
  • the thickness of the convex portion 50p of the transparent cover 50 and the thickness of the transparent adhesive 36 are designed so that the plurality of spacers 32 come into contact with the photodetected surface 60s when the package 80 is covered with the transparent cover 50.
  • the transparent adhesive 36 before curing is compressed and the thickness of the transparent adhesive 36 is reduced.
  • the distance between the light emitting surface and the light detecting surface 60s of each filter 100 is more accurately defined by the plurality of spacers 32.
  • the manufacturing error may be, for example, 100 ⁇ m to 300 ⁇ m.
  • the transparent adhesive 36 is then irradiated with light or heated to cure. Unlike the form shown in FIG. 19, the substrate 20 located on the filter array 10 and the transparent cover 50 do not have to be bonded to each other by the transparent adhesive 36. In this case, since there is a gap between the substrate 20 and the transparent cover 50, they do not come into contact with each other.
  • the filter array 10 is fixed to the image sensor 60 by the adhesive 35.
  • FIG. 20 is a cross-sectional view schematically showing a ninth example of the photodetector 300.
  • the ninth example shown in FIG. 20 differs from the eighth example shown in FIG. 19 in the following three points.
  • the convex portion 50p of the transparent cover 50 directly supports the filter array 10 without going through the substrate 20.
  • the side wall 84 of the package 80 is lower than the absence of the substrate 20.
  • the upper surface of the side wall 84 of the package 80 and the peripheral region of the transparent cover 50 facing the upper surface are joined with an adhesive 38 formed of a photocurable resin or a thermosetting resin.
  • the filter array 10 may be directly laminated on the convex portion 50p of the transparent cover 50.
  • the number of parts can be reduced by the amount of the absence of the substrate 20.
  • the gap between the upper surface of the side wall 84 of the package 80 and the peripheral region of the transparent cover 50 can be filled with the stretchable adhesive 38 before curing.
  • the adhesive 38 is then irradiated with light or heated to cure. As a result, the transparent cover 50 is joined to the package 80.
  • Adhesive 38 does not have to be transparent.
  • the filter array 10 includes a Fabry-Perot filter.
  • a filter array 10 can be used for hyperspectral cameras.
  • the filter array of the present disclosure can be used not only for a hyperspectral camera but also for a general camera (that is, an image pickup device) that acquires color images of, for example, three primary colors (red, green, and blue).
  • the filter array 10 may include a color filter instead of a Fabry-Perot filter.
  • the effect of reducing the influence of the above-mentioned interference fringes can be obtained not only in the Fabry-Perot filter but also in the filter array by the color ilta.
  • Filter arrays containing color filters can also be used for hyperspectral cameras.
  • an example of a configuration for acquiring a hyperspectral image that is, the above-mentioned separated image 220 using such a filter array will be described.
  • FIG. 21 is a diagram schematically showing transmission spectra of a red filter, a green filter, and a blue filter.
  • “R”, “G”, and “B” shown in FIG. 21 represent red, green, and blue, respectively.
  • the red, green, and blue color filters are referred to as "R filter”, “G filter”, and “B filter”, respectively.
  • the transmission spectrum of the R filter has a maximum value in a wavelength range of 600 nm or more and 700 nm or less, and has a peak width similar to this range.
  • the transmission spectrum of the G filter has a maximum value at a wavelength in the range of 500 nm or more and 600 nm or less, and has a peak width comparable to this range.
  • the transmission spectrum of the B filter has a maximum value at a wavelength in the range of 400 nm or more and 500 nm or less, and has a peak width similar to this range.
  • the transmission spectrum of each color filter has a single wide peak within the target wavelength range W. This peak width is wide enough to include two or more wavelength regions among a plurality of wavelength regions W 1 , W 2 , ..., Wii included in the target wavelength region W. If the transmission spectrum of each color filter has such a wide peak, one of the color filters has a transmittance between the adjacent wavelength region Wii and the wavelength region Wi + 1 in the target wavelength region W. Can have a difference of. In this case, a plurality of separated images 220 can be obtained even if the transmission spectrum of each color filter does not have two or more peaks in the target wavelength region W.
  • the filter array 10 including the Fabry-Perot filter in the first example shown in FIG. 7 to the ninth example shown in FIG. 20 may be replaced with the filter array 10 including the color filter.
  • the filter array 10 can be manufactured at low cost.
  • FIG. 22 is a cross-sectional view schematically showing a tenth example of the photodetector 300 according to the embodiment of the present disclosure.
  • the tenth example shown in FIG. 22 differs from the first example shown in FIG. 7 in that the filter array 10 includes a filter 100 which is a color filter.
  • the color filter can be formed from, for example, a color resist.
  • the filter array 10 includes a plurality of R filters, a plurality of G filters, and a plurality of B filters arranged irregularly on the substrate 20 such as a random distribution or a quasi-random distribution.
  • the thicknesses of the R filter, G filter, and B filter are different from each other.
  • the thickness of each filter can be, for example, 100 nm or more and 5 ⁇ m or less.
  • the distance between the light emitting surface 10s 2 and the light detecting surface 60s is different for each of the R filter, the G filter, and the B filter. Since the distance between the light emitting surface 10s 2 and the light detecting surface 60s becomes non-uniform, interference fringes appear in the captured image even if multiple reflections of light occur between the light emitting surface 10s 2 and the light detecting surface 60s. It can be suppressed. If the distance between the light emitting surface 10s 2 and the light detecting surface 60s is non-uniform, it is possible to suppress the appearance of interference fringes in the captured image even if the filter array 10 includes a color filter having a normal Bayer arrangement. Unlike the filter array 10 including the Fabry-Perot filter, the filter array 10 including the color filter has substantially no warp. Therefore, the influence of the filter array 10 on the warp of the substrate 20 is sufficiently small.
  • the filter array 10 includes two or more types of color filters having different transmission spectra in the target wavelength region W.
  • the distance between the light emitting surface 10s 2 and the light detecting surface 60s is different for each of the two or more types of color filters.
  • the color filter may be a primary color filter such as an R filter, a G filter, and a B filter.
  • the color filter may be a complementary color filter such as a cyan filter, a magenta filter, and a yellow filter.
  • the color filter may be a filter in which a primary color filter and a complementary color filter are mixed.
  • the filter array 10 according to the present embodiment may include a filter having no wavelength dependence of light transmittance, such as a transparent filter or an ND filter.
  • FIGS. 23A and 23B are cross-sectional views schematically showing a modified example of the photodetector shown in FIG. 22.
  • the modified examples shown in FIGS. 23A and 23B correspond to the modified examples shown in FIGS. 9A and 9B, respectively.
  • FIG. 24A to 24C are cross-sectional views schematically showing the eleventh to thirteenth examples of the photodetector 300 according to the embodiment of the present disclosure, respectively.
  • the eleventh example shown in FIG. 24A corresponds to the second example shown in FIG.
  • the twelfth example shown in FIG. 24B and the thirteenth example shown in FIG. 24C have a configuration peculiar to the filter array 10 including the color filter.
  • the twelfth example shown in FIG. 24B differs from the tenth example shown in FIG. 22 in that each of the plurality of filters 100 is provided with an antireflection film 22 on the light emitting surface. At least one filter 100 may include the antireflection film 22 instead of all the filters 100. If the antireflection film 22 is directly provided on the Fabry-Perot filter, the transmission spectrum of the Fabry-Perot filter may change. On the other hand, even if the antireflection film 22 is directly provided on the color filter, the transmission spectrum of the color filter does not change. Therefore, in the filter array 10 including the color filter, the antireflection film 22 can be provided on the light emitting surface 10s 2 .
  • the antireflection film 22 can suppress the reflection of light generated at the interface between the filter array 10 and air in the tenth example shown in FIG. Therefore, it is possible to suppress multiple reflection of light generated between the light emitting surface 10s 2 and the light detecting surface 60s. As a result, it is possible to further suppress the appearance of interference fringes in the captured image.
  • the thirteenth example shown in FIG. 24C differs from the twelfth example shown in FIG. 24B in that the substrate 20 is further provided with the antireflection film 22 on the surface opposite to the surface supporting the filter array 10. be.
  • the two antireflection films 22 can further improve the light detection efficiency of the photodetector 300.
  • 25 and 26 are cross-sectional views schematically showing the 14th and 15th examples of the photodetector 300 according to the embodiment of the present disclosure, respectively.
  • the fourteenth example shown in FIG. 25 corresponds to the third example shown in FIG.
  • the fifteenth example shown in FIG. 26 corresponds to the fourth example shown in FIG.
  • FIG. 27 is a plan view schematically showing a sixteenth example of the photodetector 300 according to the embodiment of the present disclosure.
  • the sixteenth example shown in FIG. 27 corresponds to the fifth example shown in FIG.
  • FIG. 28 is a cross-sectional view schematically showing a 17th example of the photodetector 300 according to the embodiment of the present disclosure.
  • the 17th example shown in FIG. 28 corresponds to the 6th example shown in FIG. 15A.
  • the peripheral region 10p of the filter array 10 shown in FIG. 28 can be, for example, the surface of any of the R filter, the G filter, and the B filter.
  • 29 to 31 are sectional views schematically showing examples of 18th to 20th of the photodetector 300 according to the embodiment of the present disclosure, respectively.
  • the eighteenth example shown in FIG. 29 corresponds to the seventh example shown in FIG. 16A.
  • the example shown in FIG. 19 corresponds to the eighth example shown in FIG.
  • the twentieth example shown in FIG. 31 corresponds to the ninth example shown in FIG.
  • the antireflection film 22 in the second example shown in FIG. 10 may be applied to any of the third example shown in FIG. 11 to the ninth example shown in FIG.
  • the filter array 10 and the image sensor 60 in the fifth example shown in FIG. 13 may be sealed by the transparent cover 50 and the package 80 in the eighth example shown in FIG. 19 or the ninth example shown in FIG. 20. good.
  • the light detection device and the filter array in the present disclosure are useful for, for example, a camera and a measuring device for acquiring a multi-wavelength two-dimensional image.
  • the optical detection device and the filter array in the present disclosure can also be applied to sensing for living organisms / medical / beauty, foreign matter / residual pesticide inspection system for food, remote sensing system, in-vehicle sensing system and the like.
  • Filter array 10s 1 Light incident surface 10s 2 Light emitting surface 10p Peripheral area of filter array 12 Interference layer 14a First reflective layer 14b Second reflective layer 20 Substrate 22 Anti-reflection film 30 Double-sided tape 32 Spacer 32A Photoresist 34, 36 Transparent Adhesive 35 Adhesive 38 Adhesive 40 Optical system 40a Microlens 50 Transparent cover 50p Convex part of transparent cover 60 Image sensor 60s Optical detection surface 60a Optical detection element 60p Peripheral area of image sensor 70 Object 80 Package 82 Bottom 82a Bottom 1st region 82b 2nd region at the bottom 84 Side wall 100 Filter 120 Image 200 Signal processing circuit 220 Separated image 300 Optical detector 400 Optical detection system

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Studio Devices (AREA)
PCT/JP2021/037711 2020-10-30 2021-10-12 光検出装置、構造体の製造方法、および光検出装置の製造方法 Ceased WO2022091769A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022552280A JP7304534B2 (ja) 2020-10-30 2021-10-12 光検出装置、構造体の製造方法、および光検出装置の製造方法
CN202180069200.0A CN116324351A (zh) 2020-10-30 2021-10-12 光检测装置、结构体的制造方法及光检测装置的制造方法
EP21885888.4A EP4239682A4 (en) 2020-10-30 2021-10-12 PHOTODETECTOR DEVICE, METHOD FOR MANUFACTURING STRUCTURE, AND METHOD FOR MANUFACTURING PHOTODETECTOR DEVICE
US18/194,669 US12557414B2 (en) 2020-10-30 2023-04-03 Light detecting device for hyperspectral imaging, method for manufacturing structure for hyperspectral imaging, and method for manufacturing light detecting device for hyperspectral imaging
JP2023097873A JP7607225B2 (ja) 2020-10-30 2023-06-14 光検出装置
JP2024176515A JP2025010160A (ja) 2020-10-30 2024-10-08 光検出装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020182110 2020-10-30
JP2020-182110 2020-10-30
JP2021-155972 2021-09-24
JP2021155972 2021-09-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/194,669 Continuation US12557414B2 (en) 2020-10-30 2023-04-03 Light detecting device for hyperspectral imaging, method for manufacturing structure for hyperspectral imaging, and method for manufacturing light detecting device for hyperspectral imaging

Publications (1)

Publication Number Publication Date
WO2022091769A1 true WO2022091769A1 (ja) 2022-05-05

Family

ID=81383742

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/037711 Ceased WO2022091769A1 (ja) 2020-10-30 2021-10-12 光検出装置、構造体の製造方法、および光検出装置の製造方法

Country Status (5)

Country Link
US (1) US12557414B2 (https=)
EP (1) EP4239682A4 (https=)
JP (3) JP7304534B2 (https=)
CN (1) CN116324351A (https=)
WO (1) WO2022091769A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024057950A1 (ja) * 2022-09-16 2024-03-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置、および電子機器

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113167649B (zh) 2019-01-16 2024-07-12 松下知识产权经营株式会社 光检测装置、光检测系统及滤光器阵列
WO2021241122A1 (ja) * 2020-05-29 2021-12-02 パナソニックＩｐマネジメント株式会社 フィルタアレイおよび光検出システム
US20230197866A1 (en) * 2021-12-16 2023-06-22 Attollo Engineering, LLC Electron-photon barrier in photodetectors
EP4492103A4 (en) * 2022-03-11 2025-06-25 Panasonic Intellectual Property Management Co., Ltd. Light detection device, light detection system, and filter array
CN118943154B (zh) * 2024-10-12 2025-01-24 武汉楚兴技术有限公司 一种图像传感器结构、制作方法及电子设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218770A (ja) 1983-05-26 1984-12-10 Toppan Printing Co Ltd 色分解フイルタ−の貼り合わせ方法
JPS63151076A (ja) 1986-12-16 1988-06-23 Sony Corp 固体撮像装置
JP2008035047A (ja) * 2006-07-27 2008-02-14 Matsushita Electric Ind Co Ltd カメラ部品およびカメラと、カメラ部品の製造方法
JP2008170979A (ja) * 2006-12-13 2008-07-24 Matsushita Electric Ind Co Ltd 固体撮像装置、その製造方法およびカメラ
JP2016114683A (ja) * 2014-12-12 2016-06-23 日本放送協会 フィルタ及び撮像装置
US9466628B2 (en) 2012-12-21 2016-10-11 Imec Spectral imaging device and method to calibrate the same
US9599511B2 (en) 2014-11-19 2017-03-21 Panasonic Intellectual Property Management Co., Ltd. Imaging apparatus comprising coding element and spectroscopic system comprising the imaging apparatus
WO2018193986A1 (ja) * 2017-04-17 2018-10-25 凸版印刷株式会社 固体撮像素子及びその製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743131A1 (de) * 1987-10-26 1989-05-03 Siemens Ag Anordnung zur hochaufloesenden spektroskopie
US6031653A (en) * 1997-08-28 2000-02-29 California Institute Of Technology Low-cost thin-metal-film interference filters
JP2008070437A (ja) * 2006-09-12 2008-03-27 Matsushita Electric Ind Co Ltd 干渉フィルタ、液晶ディスプレイ、エレクトロルミネッセンスディスプレイ、プロジェクション表示装置
JP2008177362A (ja) * 2007-01-18 2008-07-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラ
US7701024B2 (en) 2006-12-13 2010-04-20 Panasonic Corporation Solid-state imaging device, manufactoring method thereof and camera
WO2008085385A2 (en) * 2006-12-29 2008-07-17 Nanolambda, Inc. Plasmonic fabry-perot filter
JP2009004680A (ja) * 2007-06-25 2009-01-08 Panasonic Corp 固体撮像装置およびカメラ
KR20120030547A (ko) * 2009-06-17 2012-03-28 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 미니 분광계를 위한 고투과 및 큰 저지 범위를 갖는 간섭 필터
EP2507599B1 (en) 2009-11-30 2025-06-11 IMEC vzw Integrated circuit for spectral imaging system
JP6104264B2 (ja) * 2011-11-04 2017-03-29 アイメックＩｍｅｃ センサアレイ上に多重隣接画像コピーを投影するためのミラーを備えたスペクトルカメラ
JP6272627B2 (ja) 2013-01-29 2018-01-31 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 可変光学フィルターおよびそれに基づく波長選択型センサー
US9253420B2 (en) * 2014-02-12 2016-02-02 Xerox Corporation Hyperspectral single pixel imager with fabry perot filter
US10050075B2 (en) * 2014-11-21 2018-08-14 Lumilant, Inc. Multi-layer extraordinary optical transmission filter systems, devices, and methods
JP6468482B2 (ja) 2014-11-26 2019-02-13 株式会社リコー 撮像装置、物体検出装置及び移動体機器制御システム
FI127159B (en) * 2015-03-09 2017-12-15 Teknologian Tutkimuskeskus Vtt Oy Mirror plate for Fabry-Perot interferometer and Fabry-Perot interferometer
US9923007B2 (en) * 2015-12-29 2018-03-20 Viavi Solutions Inc. Metal mirror based multispectral filter array
US10170509B2 (en) * 2016-02-12 2019-01-01 Viavi Solutions Inc. Optical filter array
CN107192349B (zh) * 2016-03-14 2020-10-16 松下知识产权经营株式会社 光检测装置
WO2018070431A1 (ja) * 2016-10-11 2018-04-19 凸版印刷株式会社 光学デバイス、表示体、カラーフィルタ、および、光学デバイスの製造方法
JP2018137284A (ja) 2017-02-20 2018-08-30 ソニーセミコンダクタソリューションズ株式会社 センサ、固体撮像装置及び電子装置
JP7146376B2 (ja) * 2017-08-31 2022-10-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および電子機器
JP2019114602A (ja) * 2017-12-21 2019-07-11 ソニーセミコンダクタソリューションズ株式会社 電磁波処理装置
FR3082322B1 (fr) * 2018-06-08 2020-07-31 Commissariat A L Energie Atomique Et Aux Energies Alternatives Capteurs d'images comprenant une matrice de filtres interferentiels
FR3084459B1 (fr) 2018-07-30 2020-07-10 Silios Technologies Capteur d'imagerie multispectrale pourvu de moyens de limitation de la diaphonie
JP6945195B2 (ja) 2019-01-16 2021-10-06 パナソニックＩｐマネジメント株式会社 光学フィルタ、光検出装置、および光検出システム
CN113167649B (zh) * 2019-01-16 2024-07-12 松下知识产权经营株式会社 光检测装置、光检测系统及滤光器阵列
EP3936837A4 (en) * 2019-03-06 2022-04-27 Panasonic Intellectual Property Management Co., Ltd. LIGHT DETECTION DEVICE, LIGHT DETECTION SYSTEM AND FILTER ASSEMBLY
KR102832511B1 (ko) * 2019-10-09 2025-07-10 니폰 덴신 덴와 가부시끼가이샤 분광소자 어레이, 촬상소자 및 촬상장치
CN111141385B (zh) * 2020-01-02 2022-05-24 暨南大学 窄带透射滤波器及片上光谱分析与成像系统
EP4182750A1 (en) * 2020-07-20 2023-05-24 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Multi-spectral light-field device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218770A (ja) 1983-05-26 1984-12-10 Toppan Printing Co Ltd 色分解フイルタ−の貼り合わせ方法
JPS63151076A (ja) 1986-12-16 1988-06-23 Sony Corp 固体撮像装置
JP2008035047A (ja) * 2006-07-27 2008-02-14 Matsushita Electric Ind Co Ltd カメラ部品およびカメラと、カメラ部品の製造方法
JP2008170979A (ja) * 2006-12-13 2008-07-24 Matsushita Electric Ind Co Ltd 固体撮像装置、その製造方法およびカメラ
US9466628B2 (en) 2012-12-21 2016-10-11 Imec Spectral imaging device and method to calibrate the same
US9599511B2 (en) 2014-11-19 2017-03-21 Panasonic Intellectual Property Management Co., Ltd. Imaging apparatus comprising coding element and spectroscopic system comprising the imaging apparatus
JP2016114683A (ja) * 2014-12-12 2016-06-23 日本放送協会 フィルタ及び撮像装置
WO2018193986A1 (ja) * 2017-04-17 2018-10-25 凸版印刷株式会社 固体撮像素子及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4239682A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024057950A1 (ja) * 2022-09-16 2024-03-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置、および電子機器
EP4589660A4 (en) * 2022-09-16 2025-12-10 Sony Semiconductor Solutions Corp Photodetector and electronic appliance

Also Published As

Publication number Publication date
EP4239682A1 (en) 2023-09-06
JP7607225B2 (ja) 2024-12-27
JP7304534B2 (ja) 2023-07-07
JP2023121766A (ja) 2023-08-31
US12557414B2 (en) 2026-02-17
US20230238413A1 (en) 2023-07-27
EP4239682A4 (en) 2024-12-18
CN116324351A (zh) 2023-06-23
JP2025010160A (ja) 2025-01-20
JPWO2022091769A1 (https=) 2022-05-05

Similar Documents

Publication Publication Date Title
JP7607225B2 (ja) 光検出装置
JP6945195B2 (ja) 光学フィルタ、光検出装置、および光検出システム
JP6952294B2 (ja) 光検出装置、光検出システム、およびフィルタアレイ
US20250341661A1 (en) Photodetection device, photodetection system, and filter array
JP6952283B1 (ja) 光学フィルタアレイ、光検出装置、および光検出システム
WO2021085014A1 (ja) フィルタアレイおよび光検出システム
WO2021241122A1 (ja) フィルタアレイおよび光検出システム
WO2021241171A1 (ja) フィルタアレイおよび光検出システム
US20240410754A1 (en) Light detection device, light detection system, and filter array
US20230168126A1 (en) Filter array and imaging system
JP7122636B2 (ja) フィルタアレイおよび光検出システム
JP2021110869A (ja) 光学フィルタ、および光検出装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21885888

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2022552280

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2021885888

Country of ref document: EP

Effective date: 20230530