WO2022082411A1 - 相干性可调的半导体激光器及应用 - Google Patents

相干性可调的半导体激光器及应用 Download PDF

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Publication number
WO2022082411A1
WO2022082411A1 PCT/CN2020/122088 CN2020122088W WO2022082411A1 WO 2022082411 A1 WO2022082411 A1 WO 2022082411A1 CN 2020122088 W CN2020122088 W CN 2020122088W WO 2022082411 A1 WO2022082411 A1 WO 2022082411A1
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cavity
semiconductor laser
coherence
metal layer
mode
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PCT/CN2020/122088
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English (en)
French (fr)
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郑婉华
徐林海
王宇飞
贾宇飞
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中国科学院半导体研究所
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Priority to PCT/CN2020/122088 priority Critical patent/WO2022082411A1/zh
Publication of WO2022082411A1 publication Critical patent/WO2022082411A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

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  • the present disclosure relates to the field of semiconductor lasers, laser display technology and biological imaging technology, and in particular, to a semiconductor laser with tunable coherence and applications.
  • lasers such as high coherence, high directivity, high brightness and good monochromaticity make lasers very useful in various industrial fields such as laser ranging, laser display, optical communication, laser weapons, laser whitening, and laser processing. great application.
  • Due to the high coherence of laser light speckle phenomenon occurs in equipment using laser light as the light source.
  • laser display laser holography, coherence tomography and synthetic aperture radar imaging, the speckle generated by laser will seriously damage the imaging quality and interfere with the accurate reading of information in the image. It is necessary to reduce or eliminate laser speckle to improve the image quality.
  • Laser speckle can be used as an information carrier in many fields, such as measuring the displacement and deformation of objects, measuring the roughness of objects, measuring the changing length of crystals, detecting material cracks, studying blood vessel blood flow and biological tissue, etc.
  • these techniques include speckle photography, shear speckle interferometry, electronic speckle interferometry, digital speckle correlation techniques, etc.
  • the high coherence of the current laser itself can well satisfy the field of work using laser speckle.
  • the mature methods of suppressing speckle are all done by adding speckle suppressing optical devices to the optical path of the laser.
  • this method has high cost, is highly dependent on the stability of the environment, and cannot satisfy the high coherence of the laser. and switch between low coherence. Therefore, a light source whose coherence can be adjusted from the laser light source itself is urgently needed.
  • QPI Quality of Imaging
  • the realization of QPI requires a low-coherence light source for imaging and a high-coherence light source to obtain phase information.
  • the most suitable light source for this technique is a light source with tunable spatial coherence.
  • the present disclosure provides a semiconductor laser with tunable coherence and its application.
  • a semiconductor laser with tunable coherence comprising:
  • the deformed resonant cavity includes a first concentric cavity, a connecting cavity and a second concentric cavity;
  • the few-mode electrode implantation region is arranged on the upper surface of the deformed resonator to generate high-coherence laser light
  • the multi-mode electrode implantation region is arranged in the region outside the few-mode electrode implantation region on the upper surface of the deformed resonator, and is used to generate low-coherence laser light;
  • an isolation layer arranged on the sidewall of the deformed resonant cavity
  • the first metal layer disposed on the isolation layer
  • the third metal layer is disposed on the second metal layer.
  • an application of the above semiconductor laser in the field of laser display technology, imaging technology, non-destructive laser detection and biological imaging is also provided.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a semiconductor laser with tunable coherence provided by an embodiment of the present disclosure
  • FIG. 2 is a schematic plan view of the structure of a semiconductor laser with tunable coherence provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of a semiconductor laser with a lead-out electrode injection region provided in an embodiment of the present disclosure
  • FIG. 4 is a schematic structural diagram of a semiconductor laser with three FP electrodes according to an embodiment of the present disclosure
  • FIG. 5 is a schematic structural diagram of a semiconductor laser with three FP electrodes and a concentric cavity asymmetric provided by an embodiment of the present disclosure
  • FIG. 6 is a mode field distribution diagram of a semiconductor laser with tunable coherence provided by an embodiment of the present disclosure
  • FIG. 7 is a Q value distribution diagram of different modes of a semiconductor laser with tunable coherence provided by an embodiment of the present disclosure
  • FIG. 8 is a schematic diagram of the mode field distribution of the asymmetric structure of the semiconductor laser with tunable coherence provided by the embodiment of the present disclosure
  • FIG. 9 is a polar coordinate schematic diagram of the far-field distribution of the asymmetric structure of the semiconductor laser with tunable coherence provided by the embodiment of the present disclosure and after the cavity surface is coated.
  • the present disclosure provides a semiconductor laser with tunable coherence, belonging to the field of semiconductor laser, laser display technology, imaging technology, laser non-destructive detection and biological imaging.
  • the coherence-tunable semiconductor laser is a deformed cavity laser with patterned electrodes.
  • Deformable cavity lasers with patterned electrodes include: few-mode patterned electrode regions and multi-mode patterned electrode regions, and the coherence of the laser can be regulated by injecting currents in different patterned electrode regions and controlling the magnitude of the injected current.
  • the present disclosure discloses a semiconductor laser with tunable coherence, comprising:
  • the deformed resonant cavity includes a first concentric cavity, a connecting cavity and a second concentric cavity;
  • the few-mode electrode implantation region is arranged on the upper surface of the deformed resonator to generate high-coherence laser light
  • the multi-mode electrode injection area is set in the area outside the few-mode electrode injection area on the upper surface of the deformed resonator, which is used to generate low-coherence laser and realize multi-mode simultaneous lasing;
  • an isolation layer arranged on the sidewall of the deformed resonant cavity
  • the first metal layer disposed on the isolation layer
  • the third metal layer is disposed on the second metal layer.
  • the few-mode electrode implantation region includes one or more FP electrodes.
  • the few-mode lasing power of the semiconductor laser is adjusted by adjusting the number or width of the FP electrodes
  • the width of a single FP electrode is 4 to 6 um.
  • the semiconductor laser adjusts the coherence of the generated laser light source by injecting different currents in the few-mode electrode injection region and/or the multi-mode electrode injection region.
  • the radius of the first concentric cavity and the second concentric cavity are different;
  • the engagement cavity is a flared structure.
  • the cross-sections of the first concentric cavity and the second concentric cavity are circular structures with cut edges;
  • the centers of the first concentric cavity and the second concentric cavity are on the same straight line.
  • the material used for the first metal layer includes Ti;
  • the material used for the second metal layer includes Pt or Ag
  • the material used for the third metal layer includes Au or Cu.
  • a powered electrode injection region is derived from the few-mode electrode injection region.
  • a cavity surface of the first concentric cavity is provided with a high-reflection film for a certain angle
  • a cavity surface of the second concentric cavity is provided with a high-reflection film for a certain angle.
  • the present disclosure also discloses the application of the above-mentioned semiconductor laser in the field of laser display technology, imaging technology, non-destructive laser detection and biological imaging.
  • the semiconductor laser with tunable coherence disclosed in the present disclosure utilizes the characteristics of deformed cavity multi-mode lasing and the characteristics of narrow strip FP (Fabry-Pérot cavity) lasers that can produce low coherence, and modifies the p-surface electrode of the laser into a pattern electrode, And the zoned injection, so that different currents are injected into different electrode regions on the laser, enables the device of the present disclosure to realize the adjustment of the laser coherence.
  • FP Fabry-Pérot cavity
  • This embodiment provides a semiconductor laser with tunable coherence, as shown in FIG. 1 , including a deformed cavity based on a deformed cavity that generates a chaotic mode, and the deformed cavity includes a first concentric cavity 101 , a second common cavity Cardiac chamber 102 and intermediate connecting chamber 103.
  • An isolation layer 105 , a first metal layer 106 , a second metal layer 107 and a third metal layer 108 are sequentially arranged on the sidewall of the deformed resonant cavity.
  • the cross-sectional shape of the connecting cavity 103 is a rectangle, and in other embodiments, it may be other shapes.
  • the cross-sections of the first concentric cavity 101 and the second concentric cavity 102 are circular structures with cut edges, and the centers of the first concentric cavity 101 and the second concentric cavity 102 are on the same straight line.
  • the embodiment can be changed to other shapes.
  • R1 is the radius of the first concentric cavity 101
  • R2 is the radius of the isolation layer 105
  • R3 is the radius of the first layer of metal 106
  • R4 is the radius of the second layer of metal 107
  • R5 is the third metal
  • W is the width of the connecting cavity 103
  • L is the length of the intermediate connecting cavity 103
  • d1 is the distance from the cavity surface of the first concentric cavity 101 to the center of the first concentric cavity 101
  • d2 is the first concentric cavity 101 The distance from the center of the cavity 101 to the cavity surface of the connecting cavity 103 .
  • the deformed resonator has a few-mode electrode injection region 109 and a multi-mode electrode injection region (including a first multi-mode electrode injection region 110 and a second multi-mode electrode injection region 111 ).
  • the few-mode electrode implantation region 109 is arranged in the middle region of the surface of the deformed resonator, and the few-mode electrode implantation region is a single FP electrode or multiple FP electrodes guided by the refractive index, and is used to generate laser light with high spatial coherence.
  • the multi-mode electrode injection area is the area on the surface of the deformed resonator except the FP electrode.
  • W1 is the width of a single FP electrode, and the width of the FP electrode region is very small (about 5um), so that the single-mode lasing of FP in the resonator is as far as possible, so that the number of modes in the resonator is small, and high coherence is achieved. output.
  • the current injected into the multi-mode electrode injection area and the few-mode electrode injection area are different in magnitude, and the injection time is different, so that low-coherence and high-coherence laser light sources are obtained respectively. 2A) to obtain high-coherence laser, and the injection current in the multi-mode electrode injection region is relatively large (eg, greater than 5A) to obtain low-coherence laser.
  • the multi-mode electrode injection area and the few-mode electrode injection area must use patterned electrodes, and zoned injection.
  • the pattern electrode in the multi-mode electrode injection area is a low-coherence electrode
  • the pattern electrode in the few-mode electrode injection area is a high-coherence electrode
  • the high-coherence electrode may be one FP electrode or multiple FP electrodes.
  • the few-mode electrode injection region 109 may also lead to the power-on electrode injection regions 112 and 113 exclusively, as shown in FIGS. 3 and 4 .
  • a plurality of FP electrode regions may be added, or the width of the FP electrode may be enlarged, as shown in FIG. 4 .
  • the size of the first concentric cavity 101 and the second concentric cavity 102 can be adjusted, and the intermediate connecting cavity 103 can be changed into a Taper (bell mouth) structure, as shown in FIG. 5 , this structure has the characteristics of adjustable coherence and good directionality , where the arrows point out the light field of the outgoing light. This structure further reduces the coherence of the laser and increases the directivity of the laser output.
  • Taper bell mouth
  • the material used in the deformed resonant cavity is the semiconductor material 104 .
  • the laser light source of semiconductor laser is prepared on the material system of semiconductor.
  • the etching depth of the sidewalls of the deformed resonant cavity all exceeds the active region of the semiconductor material.
  • the circular apex of the resonant region of the first concentric cavity 101 of the deformed cavity 101 or the second concentric cavity 102 can add scattering points and the sidewall of the structure of the connecting cavity 103 can be deformed to further reduce Laser coherence.
  • the semiconductor material 104 can be InGaP;
  • the material used for the isolation layer 105 is SiO 2 ;
  • the first metal layer 106 is used for confinement and feedback of the light field, and the material used is Ti;
  • the second metal layer 107 is used for confinement and feedback of the light field, and the material used is Pt;
  • the third metal layer 108 is used for confinement and feedback of the light field, and the material used is Au;
  • the confinement effect of the isolation layer 105, the first layer of metal 106, the second layer of metal 107 and the third metal layer 108 on light enables a large number of modes with completely different spatial distributions to be generated in the cavity, as shown in FIG. 6, and By adjusting the length of the cavity, the Q values of different modes in the cavity can be made very close.
  • the reflection surfaces required for the formation of various modes in the cavity and the Q value of these modes can divide the modes in the cavity into five categories.
  • the field is shown in Figure 6.
  • Figure 6(a) shows the first type of mode. This type of mode needs to be formed by the common reflection of four surfaces.
  • the light field distribution of the fundamental mode of this type of mode is rhombus, because the angle of this mode at the cavity surface is greater than The total reflection angle, and the confinement of the sidewall on the light field, the Q value of this mode is very large.
  • (b) in Fig. 6 belongs to the second type of mode, forming two symmetrical WGM (whispering gallery mode) mode evolution modes, each branch of this type of mode is formed by four faces, and the Q value of this type of mode is smaller than the first One type of mode, (c) and (d) in Figure 6 belong to the third type of mode, the formation of this type of mode requires the common reflection of the eight faces of the dumbbell cavity, and the Q value of the mode shown in (c) is slightly lower than the second type of mode.
  • Figures (e) and (f) belong to the fourth type of modes, which are formed by two surface reflections.
  • Figure (e) belongs to the FP mode, and the radiation loss of the FP mode is large, resulting in the Q value of this type of mode. smaller.
  • the image belongs to the concentric cavity mode, which cannot be ejected from the cavity surface, which is not the desired mode.
  • Figures (g) and (h) belong to the fifth type of mode. The formation of these two types of modes requires all surfaces to work together.
  • Figure (g) belongs to the mixed mode, and the Q value is between high Q and low Q.
  • (h) ) graphs belong to chaotic modes, which have low Q values.
  • the Q value distribution diagram of different modes of the semiconductor laser with tunable coherence provided by the embodiment of the present disclosure; 1, 2, 3, 4, and 5 in FIG. 7 correspond to the first type of the above-mentioned five types of modes
  • the Q value of the mode, the second mode, the third mode, the fourth mode and the fifth mode it can be seen that the Q values of different modes in the cavity are relatively close, so that a large number of modes in the cavity can be lased at the same time, to achieve low coherence laser output.
  • the radii of the two concentric cavities may be asymmetric structures, that is, the radii of the first concentric cavity 101 and the second concentric cavity 102 are different, as shown in FIG. 5 and FIG. 8 .
  • the degree of asymmetry is determined according to the angle ⁇ between the side wall of the connecting cavity 103 and the optical axis. When ⁇ is adjusted to an appropriate value, both multi-mode lasing and directional lasing can be realized in the resonant cavity. shoot.
  • a high-reflection film at a certain angle may be coated on the cavity surface of the first concentric cavity 101 and the second concentric cavity 102 to further As shown in Figure 9, the far-field distribution of various modes is between plus and minus 30°.
  • the method for preparing biochar and hydrogen by utilizing anaerobic fermentation by-products of the present disclosure has at least one of the following advantages over the prior art:
  • the semiconductor laser with tunable coherence provided by the present disclosure can achieve tunable coherence by introducing pattern electrodes on the upper surface of the cavity and sub-regional injection, and the injected currents in different electrode regions are different in magnitude;
  • the high coherence electrode is a single FP or a plurality of FPs, the injected current is small, and is used to realize a small number of FP mode lasing, even single-base mode lasing, to achieve high coherence;
  • the low coherence electrode is used to remove other regions of the FP, and the current injection is relatively large. At this time, the entire cavity can play a feedback effect on light, so that the modes in the cavity can be enriched. Multimode lasing to achieve low coherence;
  • a low-coherence light source as an illumination source in biological imaging.
  • a high-coherence light source needs to be used as an illumination source, and the whole process only needs to adjust the current injection size in different regions to achieve coherence Adjustable, high integration, easy to operate, convenient, simple and so on.

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  • General Physics & Mathematics (AREA)
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Abstract

一种相干性可调的半导体激光器及应用，半导体激光器包括变形谐振腔，包括第一共心腔（101）、衔接腔（103）和第二共心腔（102）；少模电极注入区（109），设置在变形谐振腔上表面，用于产生高相干性的激光；多模电极注入区（110，111），设置在变形谐振腔上表面少模电极注入区（109）之外的区域，用于产生低相干性的激光；隔离层（105），设置在变形谐振腔侧壁上；第一金属层（106），设置在隔离层（105）上；第二金属层（107），设置在第一金属层（106）上；以及第三金属层（108），设置在第二金属层（107）上。相干性可调的半导体激光器，通过在腔的上表面引入图形电极以及分区注入，且在不同电极区域的注入的电流大小不同，使得激光器可以实现相干性可调。

Description

相干性可调的半导体激光器及应用 技术领域
本公开涉及半导体激光器和激光显示技术以及生物成像技术领域，特别涉及一种相干性可调的半导体激光器及应用。
背景技术
激光的高相干性，高方向性，高亮度以及良好的单色性等优异的性能使得激光在激光测距，激光显示，光通讯，激光武器，激光美白，激光加工等各个工业领域都有很大的应用。由于激光的高相干性使得在以激光为光源的设备中会产生散斑现象。在激光显示，激光全息照相，相干层析术以及综合孔径雷达成像等方面，激光产生的散斑会严重的破坏成像质量，干扰图像中信息的准确读取，需要降低或者消除激光散斑来提高成像质量。而激光散斑可以作为一种信息载体应用于众多的领域中，如测量物体的位移、形变，测量物体的粗糙度，测量晶体的变化长度，检测材料裂纹，研究血管血流和生物组织等，这些技术总结来说包括散斑照相，剪切散斑干涉术，电子散斑干涉术，数字散斑相关技术等。
而现在的激光器本身的高相干性可以很好的满足利用激光散斑的工作的领域，要将激光器应用到显示等领域，需要对激光的高相干性进行抑制，从而抑制散斑。而目前成熟的抑制散斑的方法都是在激光的光路上添加抑制散斑的光学器件来完成，而这种方法成本高，对环境的稳定性依赖大，且无法满足激光器的在高相干性以及低相干性之间进行切换。所以急需一种从激光光源本身就可调节相干性的光源。
QPI(定量相位成像技术)是一种无标记高精度的生物成像技术，该技术对生物成像领域是巨大的推动，QPI的实现需要低相干光源用于成像，需要高相干光源获得相位信息。这种技术所最合适的光源就是空间相干性可调的光源。
公开内容
针对上述技术问题，本公开提供了一种相干性可调的半导体激光器及应用。
具体地，作为本公开的一个方面，提供了一种相干性可调的半导体激光器，包括
变形谐振腔，包括第一共心腔、衔接腔和第二共心腔；
少模电极注入区，设置在变形谐振腔上表面，用于产生高相干性的激光；
多模电极注入区，设置在变形谐振腔上表面少模电极注入区之外的区域，用于产生低相干性的激光；
隔离层，设置在变形谐振腔侧壁上；
第一金属层，设置在隔离层上；
第二金属层，设置在第一金属层上；以及
第三金属层，设置在第二金属层上。
作为本公开的另一个方面，还提供了一种如上所述的半导体激光器在激光显示技术、成像技术、激光无损探测领域以及生物成像领域的应用。
附图说明
图1为本公开实施例提供的相干性可调的半导体激光器的截面结构的示意图；
图2为本公开实施例提供的相干性可调的半导体激光器的俯视方向结构示意图；
图3为本公开实施例提供的引出电极注入区的半导体激光器的结构示意图；
图4为本公开实施例提供的带有三个FP电极的半导体激光器结构示意图；
图5为本公开实施例提供的带有三个FP电极且共心腔非对称的半 导体激光器结构示意图；
图6为本公开实施例提供的相干性可调的半导体激光器的模场分布图；
图7为本公开实施例提供的相干性可调的半导体激光器的不同模式的Q值分布图；
图8为本公开实施例提供的相干性可调的半导体激光器的非对称结构的模场分布示意图；
图9为本公开实施例提供的相干性可调的半导体激光器的非对称的结构的器件且腔面镀膜后的远场分布极坐标示意图。
上述附图中，附图标记含义具体如下：
101-第一共心腔；102-第二共心腔；103-衔接腔；104-半导体材料；105-隔离层；106-第一金属层；107-第二金属层；108-第三金属层；109-FP电极区；110-第一多模电极注入区；111-第二多模电极注入区；112-FP电极注入区；113-多FP电极注入区。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开作进一步的详细说明。
本公开提供了相干性可调的半导体激光器，属于半导体激光器，激光显示技术、成像技术、激光无损探测领域以及生物成像领域。所述相干性可调的半导体激光器是带图形电极的变形腔激光器。带图形电极的变形腔激光器包括：少模图形电极区域和多模图形电极区域，通过在不同的图形电极区域注入电流，以及控制注入电流的大小来调控激光器的相干性。
本公开公开了一种相干性可调的半导体激光器，包括：
变形谐振腔，包括第一共心腔、衔接腔和第二共心腔；
少模电极注入区，设置在变形谐振腔上表面，用于产生高相干性的激光；
多模电极注入区，设置在变形谐振腔上表面少模电极注入区之外的 区域，用于产生低相干性的激光，实现多模同时激射；
隔离层，设置在变形谐振腔侧壁上；
第一金属层，设置在隔离层上；
第二金属层，设置在第一金属层上；以及
第三金属层，设置在第二金属层上。
在本公开的一些实施例中，所述少模电极注入区包括一个或多个FP电极。
在本公开的一些实施例中，所述半导体激光器的少模激射功率通过调节FP电极的个数或者宽度来调节；
在本公开的一些实施例中，单个所述FP电极的宽度为4至6um。
在本公开的一些实施例中，所述半导体激光器通过在少模电极注入区和/或多模电极注入区注入不同的电流来调节产生的激光光源的相干性。
在本公开的一些实施例中，所述第一共心腔和第二共心腔的半径不同；
在本公开的一些实施例中，所述衔接腔为喇叭口结构。
在本公开的一些实施例中，所述第一共心腔和第二共心腔的截面均为切边的圆形结构；
在本公开的一些实施例中，所述第一共心腔和第二共心腔的圆心在同一直线上。
在本公开的一些实施例中，所述第一金属层采用的材料包括Ti；
在本公开的一些实施例中，所述第二金属层采用的材料包括Pt或Ag；
在本公开的一些实施例中，所述第三金属层采用的材料包括Au或Cu。
在本公开的一些实施例中，在所述少模电极注入区引出加电电极注入区。
在本公开的一些实施例中，所述第一共心腔的腔面上设有针对某一角度的高反膜；
在本公开的一些实施例中，所述第二共心腔的腔面上设有针对某一角度的高反膜。
本公开还公开了如上所述的半导体激光器在激光显示技术、成像技术、激光无损探测领域以及生物成像领域的应用。
以下通过具体实施例结合附图对本公开的技术方案做进一步阐述说明。需要注意的是，下述的具体实施例仅是作为举例说明，本公开的保护范围并不限于此。
本公开相干性可调的半导体激光器，利用变形腔多模激射的特点，以及窄条FP(Fabry-Pérot cavity)激光器能产生低相干性的特点，将激光器的p面电极修改为图形电极，并且分区注入，使得激光器上的不同的电极区域注入不同的电流使得本公开的器件实现激光器相干性的调节。
本实施例提供了一种相干性可调的半导体激光器，如图1所示，包括以变形腔为基础的产生混沌模式的变形谐振腔，变形谐振腔包括第一共心腔101、第二共心腔102和中间衔接腔103。变形谐振腔侧壁上依次设有隔离层105、第一层金属106、第二层金属107和第三金属层108。
本实施例中衔接腔103的截面形状为矩形，在其他实施例中可以为其他形状。
本实施例中第一共心腔101和第二共心腔102的截面为切边的圆形结构且的第一共心腔101和第二共心腔102的圆心在同一直线上，在其他实施例中可以改变为其他形状。
如图1所示，R1为第一共心腔101的半径；R2为隔离层105的半径；R3为第一层金属106的半径；R4为第二层金属107的半径；R5为第三金属层108的半径；W为衔接腔103的宽度；L为中间衔接腔103的长度；d1为第一共心腔101的腔面到第一共心腔101圆心的距离；d2为第一共心腔101的圆心到衔接腔103腔面的距离。
如图2所示，变形谐振腔上有少模电极注入区109和多模电极注入区(包括第一多模电极注入区110以及第二多模电极注入区111)。少模 电极注入区109设置在变形谐振腔表面的中间区域，少模电极注入区是折射率导引的单个FP电极或者多个FP电极，用于产生高空间相干性的激光。多模电极注入区为变形谐振腔表面除FP电极以外的区域，靠侧壁和腔面的折射率差的反馈形成各种空间分布不同且Q值接近的模式，以实现多模同时激射。图2中W1为单个FP电极的宽度，FP电极区的宽度非常小(5um左右)，使得谐振腔内尽量实现FP的单模激射，使得谐振腔内的模式数目较少，实现高相干性输出。
多模电极注入区和少模电极注入区上注入的电流大小不一样，且注入的时间不一样，分别获得低相干性和高相干性激光光源，少模电极注入区注入电流较小(如小于2A)，获得高相干性激光，多模电极注入区注入电流较大(如大于5A)，获得低相干性激光。
其中，多模电极注入区和少模电极注入区必须使用图型电极，以及分区注入。多模电极注入区的图型电极为低相干性电极，少模电极注入区的图型电极为高相干性电极，高相干性电极可以是一个FP电极或者多个FP电极。第一多模电极注入区110、第二多模电极注入区111和少模电极注入区109加电时在不同的注入区电极分别加电，且加电的大小不一样。
在本公开的一些实施例中，少模电极注入区109也可以专门引出加电电极注入区112和113，如图3、4所示。
在本公开的一些实施例中，为增加少模激射的功率，可以增加多个FP电极区域，或者扩大FP电极的宽度，如图4所示。
第一共心腔101和第二共心腔102大小可调，中间衔接腔103可以变为Taper(喇叭口)结构，如图5所示，该结构具有相干性可调且方向性良好的特点，其中箭头指出了出射光的光场。这种结构进一步的降低激光的相干性，且增加激光输出的方向性。
其中，变形谐振腔采用的材料为半导体材料104。
其中，半导体激光器激光光源制备在半导体的材料体系上。
其中，所述变形谐振腔的侧壁的刻蚀深度均超过半导体材料的有源区。
在其他实施例中，变形谐振腔的第一共心腔101或者第二共心腔102的谐振区的圆形顶点可以添加散射点以及在衔接腔103结构的侧壁可以发生形变来进一步的降低激光的相干性。
其中，半导体材料104可以为InGaP；
其中，隔离层105采用的材料为SiO 2；
其中，第一金属层106用于限制和反馈光场，采用的材料为Ti；
其中，第二金属层107用于限制和反馈光场，采用的材料为Pt；
其中，第三金属层108用于限制和反馈光场，采用的材料为Au；
其中，隔离层105、第一层金属106、第二层金属107和第三金属层108对光的限制作用，使腔内可以产生大量的空间分布完全不同的模式，如图6所示，且通过调整腔的长度可以使得腔内不同模式的Q值非常接近，腔内各种模式形成时所需要的反射面和以及这些模式的Q值大小可以将腔内的模式分为5大类，模场如图6所示。图6中(a)图所示的是第一类模式，此类模式需要4个面的共同反射形成，这类模式的基模的光场分布为菱形，由于此模式在腔面的角度大于全反射角，且侧壁对光场的限制作用，此模式的Q值非常大。图6中(b)属于第二类模式，形成两个对称的WGM(回音壁模式)模式演化的模式，此类模式的每一个分支由四个面形成，且此类模式的Q值小于第一类模式，图6中(c)、(d)图属于第三类模式，此类模式的形成需要哑铃型腔的八个面共同反射形成，(c)图所显示的模式的Q值略低于第二类模式。由于(d)图显示的模式的频繁的接触侧壁，导致侧壁金属的吸收损耗很大，Q值较小。(e)和(f)图属于第四类模式，此两类模式由两个面反射形成，其中(e)图属于FP模式，FP模式的辐射损耗较大，导致此类模式的Q值也较小。(f)图属于共心腔模式，不能腔面出射，并不是想要的模式。(g)、(h)图属于第五类模式，这两类模式的形成需要所有的面共同作用，(g)图属于混杂模式，Q值的大小处于高Q和低Q之间，(h)图属于混沌模式，此类模式的Q值较低。
如图7所示，本公开实施例提供的相干性可调的半导体激光器的不同模式的Q值分布图；图7中1，2，3，4，5对应上述的五类模式的第 一类模式、第二类模式、第三类模式、第四类模式和第五类模式Q值大小，可以看出腔内的不同模式的Q值较接近，使得腔内大量的模式可以同时激射，以实现低相干性激光输出。
在本公开的一些实施例中，其中两个共心腔的半径可以为非对称结构，即第一共心腔101和第二共心腔102的半径不同，如图5和图8所示。其中，非对称度根据衔接腔103的侧壁与光轴的夹角θ的大小来确定，当调整θ为合适的值时，谐振腔内既能实现多模激射，且可以实现方向性激射。
在本公开的一些实施例中，对于非对称的结构的腔面可以在第一共心腔101和第二共心腔102的腔面处镀一层对某一角度的高反膜，来进一步的实现出射光的方向性，如图9所示，各类模式的远场分布都在正负30°之间。
综上，本公开的利用厌氧发酵副产物制备生物炭及氢气的方法，相对于现有技术至少具有以下优势之一：
1、本公开提供的相干性可调的半导体激光器，通过在腔的上表面引入图形电极以及分区注入，且在不同电极区域的注入的电流大小不同，使得激光器可以实现相干性可调；
2、本公开提供的相干性可调的半导体激光器，高相干性电极为单个FP或者多个FP，注入的电流大小较小，用于实现少量FP模式激射，甚至单基模式激射，实现高相干性；
3、本公开提供的相干性可调的半导体激光器，低相干性电极为除去FP得其他区域，电流注入较大，此时的整个腔对光都能起到反馈作用使得腔内的模式丰富实现多模激射，实现低相干性；
4、在生物成像时用低相干的光源作为照明源，在提取生物的相位信息时，需要用高相干性光源作为照明源，且整个过程只需要调节不同区域的电流注入大小就能实现相干性可调，有高集成度，易操作，方便，简单等特点。
至此，已经结合附图对本实施例进行了详细描述。依据以上描述，本领域技术人员应当对本公开有了清楚的认识。
还需要说明的是，本文可提供包含特定值的参数的示范，但这些参数无需确切等于相应的值，而是可在可接受的误差容限或设计约束内近似于相应值。实施例中提到的方向用语，仅是参考附图的方向，并非用来限制本公开的保护范围。此外，除非特别描述或必须依序发生的步骤，上述步骤的顺序并无限制于以上所列，且可根据所需设计而变化或重新安排。并且上述实施例可基于设计及可靠度的考虑，彼此混合搭配使用或与其他实施例混合搭配使用，即不同实施例中的技术特征可以自由组合形成更多的实施例。
应注意，贯穿附图，相同的元素由相同或相近的附图标记来表示。在以上描述中，一些具体实施例仅用于描述目的，而不应该理解为对本公开有任何限制，而只是本公开实施例的示例。在可能导致对本公开的理解造成混淆时，将省略常规结构或构造。应注意，图中各部件的形状和尺寸不反映真实大小和比例，而仅示意本公开实施例的内容。
上述实施例可基于设计及可靠度的考虑，彼此混合搭配使用或与其他实施例混合搭配使用，即不同实施例中的技术特征可以自由组合形成更多的实施例。
以上所述的具体实施例，对本公开的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本公开的具体实施例而已，并不用于限制本公开，凡在本公开的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。
以上所述的具体实施例，对本公开的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本公开的具体实施例而已，并不用于限制本公开，凡在本公开的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (15)

  1. 一种相干性可调的半导体激光器，其中，包括：
    变形谐振腔，包括第一共心腔、衔接腔和第二共心腔；
    少模电极注入区，设置在变形谐振腔上表面，用于产生高相干性的激光；
    多模电极注入区，设置在变形谐振腔上表面少模电极注入区之外的区域，用于产生低相干性的激光；
    隔离层，设置在变形谐振腔侧壁上；
    第一金属层，设置在隔离层上；
    第二金属层，设置在第一金属层上；以及
    第三金属层，设置在第二金属层上。
  2. 根据权利要求1所述的半导体激光器，其中，
    所述少模电极注入区包括一个或多个FP电极。
  3. 根据权利要求2所述的半导体激光器，其中，
    所述半导体激光器的少模激射功率通过调节FP电极的个数或者宽度来调节。
  4. 根据权利要求2所述的半导体激光器，其中，
    单个所述FP电极的宽度为4至6um。
  5. 根据权利要求1所述的半导体激光器，其中，
    所述半导体激光器通过在少模电极注入区和/或多模电极注入区注入不同的电流来调节产生的激光光源的相干性。
  6. 根据权利要求1所述的半导体激光器，其中，
    所述第一共心腔和第二共心腔的半径不同。
  7. 根据权利要求1所述的半导体激光器，其中，
    所述衔接腔为喇叭口结构。
  8. 根据权利要求1所述的半导体激光器，其中，
    所述第一共心腔和第二共心腔的截面均为切边的圆形结构。
  9. 根据权利要求1所述的半导体激光器，其中，
    所述第一共心腔和第二共心腔的圆心在同一直线上。
  10. 根据权利要求1所述的半导体激光器，其中，
    所述第一金属层采用的材料包括Ti。
  11. 根据权利要求1所述的半导体激光器，其中，
    所述第二金属层采用的材料包括Pt或Ag。
  12. 根据权利要求1所述的半导体激光器，其中，
    所述第三金属层采用的材料包括Au或Cu。
  13. 根据权利要求1所述的半导体激光器，其中，
    在所述少模电极注入区引出加电电极注入区。
  14. 根据权利要求1所述的半导体激光器，其中，
    所述第一共心腔的腔面上设有针对某一角度的高反膜；
    所述第二共心腔的腔面上设有针对某一角度的高反膜。
  15. 如权利要求1至14任一项所述的半导体激光器在激光显示技术、成像技术、激光无损探测领域以及生物成像领域的应用。
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