WO2022077725A1 - 一种微型发光二极管灯板、背光模组及其制备方法 - Google Patents

一种微型发光二极管灯板、背光模组及其制备方法 Download PDF

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Publication number
WO2022077725A1
WO2022077725A1 PCT/CN2020/132848 CN2020132848W WO2022077725A1 WO 2022077725 A1 WO2022077725 A1 WO 2022077725A1 CN 2020132848 W CN2020132848 W CN 2020132848W WO 2022077725 A1 WO2022077725 A1 WO 2022077725A1
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Prior art keywords
layer
backlight module
light
emitting diode
miniature light
Prior art date
Application number
PCT/CN2020/132848
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English (en)
French (fr)
Inventor
胡道兵
Original Assignee
Tcl华星光电技术有限公司
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Priority to US16/973,790 priority Critical patent/US20220320368A1/en
Publication of WO2022077725A1 publication Critical patent/WO2022077725A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133605—Direct backlight including specially adapted reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • the present application relates to the field of display technology, and in particular, to a miniature light-emitting diode lamp panel, a backlight module and a preparation method thereof.
  • Liquid crystal displays are the mainstream products in the display panel market.
  • the backlight module is one of the key components of the liquid crystal display, which is used to provide sufficient and evenly distributed light sources so that the liquid crystal display can display images.
  • Traditional backlight modules usually include backlight source, light guide plate, optical film, plastic frame and other components. Depending on the distribution position of the light source, traditional backlight modules are divided into two types: edge-lit backlight modules and direct-lit backlight modules. .
  • Mini-Light Emitting Diode Mini-Light Emitting Diode, Mini-LED
  • Mini-LED has the characteristics of good display performance, low power, high brightness, etc.
  • Mini-LED backlight module is turned on, not all Mini-LEDs are turned on, but they are turned on to match the display screen. The Mini-LED makes the areas that do not need to be displayed appear completely dark, thus achieving high contrast.
  • the existing Mini-LED backlight module includes a Mini-LED light board.
  • the Mini-LED light board generally includes: a glass substrate 100; a plurality of Mini-LED200 (Mini-Light Emitting Diode, Mini-LED), arranged on the glass substrate 100 at intervals; and a white oil reflective layer 300, stacked on the glass substrate 100, the white oil reflective layer 300 is on each of the Mini-LED200.
  • a white oil opening is provided at the position, so that each of the Mini-LEDs 200 is exposed on the white oil reflective layer 300 .
  • the white oil reflective layer 300 is used to enhance the reflection effect of the glass substrate 100 on light, improve the utilization rate of light, and avoid low reflectivity and high light loss rate in the area of the glass substrate 100 where the Mini-LED 200 is not provided Shortcomings.
  • Due to the hole-opening process it is impossible to ensure that the white oil hole is fully adapted to the Mini-LED200, that is, there is a gap 400 between the hole edge of the white oil hole and the edge of the Mini-LED200. Light will leak out from the void 400, thereby reducing the utilization rate of light.
  • the main purpose of the present application is to provide a miniature light-emitting diode lamp panel, a backlight module and a preparation method thereof, so as to improve the existing Mini-LED backlight module with high light loss rate and light utilization. low rate problem.
  • the present application provides a miniature light-emitting diode lamp panel, comprising:
  • a first reflective layer stacked on one side of the substrate
  • circuit layer stacked on the side of the first reflective layer facing away from the substrate, and a plurality of electrical connection positions are provided on the circuit layer;
  • a plurality of miniature light-emitting diodes are electrically connected to each of the electrical connection positions, and the plurality of miniature light-emitting diodes are arranged at intervals.
  • the first reflection layer is a distributed Bragg mirror structure.
  • the first reflective layer is composed of a first silicon nitride layer, a silicon oxide layer and a second silicon nitride layer which are stacked in sequence.
  • the first reflective layer is composed of a first silicon nitride layer, an amorphous silicon layer and a second silicon nitride layer which are stacked in sequence.
  • the circuit layer is at least one of a printed circuit board, a BT board, an aluminum substrate, and a flexible circuit board.
  • a backlight module comprising:
  • a miniature light-emitting diode light board includes: a substrate, a first reflective layer, a circuit layer and a plurality of miniature light-emitting diodes, the first reflective layer is stacked on one side of the substrate , the circuit layer is stacked on the side of the first reflective layer away from the substrate, and the circuit layer is provided with a plurality of electrical connection positions, and the plurality of miniature light-emitting diodes are respectively electrically connected to each on the electrical connection position, and the plurality of miniature light-emitting diodes are arranged at intervals; and
  • a second reflective layer is stacked on one side of the micro-LED light board, and the second reflective layer is provided with a plurality of openings arranged at intervals to expose each of the micro-LEDs.
  • the material of the second reflective layer is white ink with reflective effect.
  • the backlight module further includes: a protective layer covering each of the miniature light-emitting diodes and the second reflection layer.
  • the material of the protective layer is silica gel or epoxy resin.
  • the backlight module further includes: an optical film group stacked on the side of the second reflective layer facing away from the miniature light-emitting diode lamp board.
  • the optical film set includes one or more of a prism sheet, a quantum dot film, a diffusion sheet and a reflective polarizer.
  • the backlight module further includes: an outer frame, the outer frame is composed of a metal backplane and four metal retaining walls, the metal backplane, the miniature light-emitting diode lamp board and the second The reflective layers are stacked in sequence, and each of the metal retaining walls is arranged around the miniature light-emitting diode lamp board and the second reflective layer.
  • the backlight module further includes: a plastic frame, the plastic frame is arranged around the micro light-emitting diode lamp panel and the second reflective layer, and each of the metal retaining walls is respectively arranged on the the periphery of the plastic frame.
  • the backlight module further includes: a double-sided adhesive layer disposed between the metal backplane and the miniature light-emitting diode lamp board.
  • the backlight module further includes: a light-shielding layer disposed on the top of each of the metal retaining walls.
  • the present application provides a method for preparing a backlight module, comprising the following steps:
  • a miniature light-emitting diode lamp board is prepared, the miniature light-emitting diode lamp board includes: a substrate; a first reflective layer stacked on one side of the substrate; a circuit layer stacked on the first reflective layer away from the A plurality of electrical connection positions are arranged on one side of the substrate and on the circuit layer; diode spacing settings; and
  • a second reflection layer is formed by printing on one side of the miniature light-emitting diode light board, and the second reflection layer is respectively provided with an opening at the position of each miniature light-emitting diode, so that each miniature light-emitting diode is exposed.
  • the printing is a jet printing process or a silk screen printing process.
  • the preparation of a miniature light-emitting diode lamp board includes the following steps:
  • a circuit layer is formed on the side of the first reflective layer facing away from the substrate, and a plurality of electrical connection positions are provided on the circuit layer;
  • the plurality of miniature light-emitting diodes are electrically connected to each of the electrical connection positions.
  • the deposition is a physical vapor deposition process.
  • preparing and forming a circuit layer on the side of the first reflective layer away from the substrate, the circuit layer being provided with a plurality of electrical connection positions includes the following steps:
  • a first photoresist layer is prepared on the side of the metal layer away from the first reflective layer to form an entire surface
  • a plurality of electrical connection sites are prepared and formed on the patterned metal layer.
  • the present application provides a miniature light-emitting diode lamp board.
  • a first reflection layer is added, and the first reflection layer is arranged between the substrate and the plurality of miniature light-emitting diodes.
  • the first reflective layer is provided in the gap to enhance the reflection effect of light, effectively preventing light from leaking from the gap, thereby improving the utilization rate of light and greatly reducing the the loss rate of light.
  • the miniature light emitting diode lamp board can be used as a backlight source of a backlight module, and has the advantage of saving energy consumption.
  • FIG. 1 is a schematic structural diagram of a Mini-LED light panel in the prior art.
  • FIG. 2 is a schematic structural diagram of an embodiment of the Mini-LED light panel provided by the present application.
  • FIG. 3 is a schematic flowchart of an embodiment of a method for manufacturing a Mini-LED light panel provided by the present application.
  • FIG. 4 is a schematic flowchart of an embodiment of step S2 in FIG. 3 .
  • FIG. 5 is a schematic flowchart of another embodiment of step S2 in FIG. 4 .
  • FIG. 6 is a schematic cross-sectional view of an embodiment of a backlight module provided by the present application.
  • FIG. 7 is a schematic longitudinal cross-sectional view of an embodiment of a backlight module provided by the present application.
  • FIG. 8 is a schematic structural diagram of another embodiment of the backlight module provided by the present application.
  • FIG. 9 is a schematic flowchart of an embodiment of a method for manufacturing a backlight module provided by the present application.
  • the present application provides a miniature light-emitting diode (Mini-Light Emitting Diode, Mini-LED) light board, mainly includes: a substrate 1, a first reflective layer 2, a circuit layer 3 and a plurality of Mini-LED4.
  • the first reflective layer 2 is stacked on one side of the substrate 1
  • the circuit layer 3 is stacked on the side of the first reflective layer 2 away from the substrate 1
  • the plurality of Mini-LEDs are spaced apart from each other. arranged on the circuit layer 3 .
  • the substrate 1 is used to carry a plurality of Mini-LEDs 4 , and the material of the substrate 1 may be glass.
  • the substrate 1 has the function of reflecting the light emitted by the Mini-LED4, so as to reduce the loss rate of the light.
  • the first reflection layer 2 is a distributed Bragg mirror structure, that is, a composite layer structure formed by alternately arranging two material layers with different refractive indices.
  • the first reflection layer 2 can improve the utilization rate of light and enhance the reflection effect of light.
  • the first reflective layer 2 is composed of a first silicon nitride (SiNx) layer, a silicon monoxide (SiOx) layer and a second silicon nitride layer which are stacked in sequence.
  • the first reflective layer 2 is composed of a first silicon nitride (SiNx) layer, an amorphous silicon (a-Si) layer and a second silicon nitride (SiNx) layer which are stacked in sequence. ) layer composition.
  • the overall thickness of the first reflective layer 2 and the thicknesses of the respective material layers constituting the first reflective layer 2 are not specifically limited, and can be selected according to actual needs.
  • the circuit layer 3 is provided with a plurality of electrical connection sites, and each of the electrical connection sites includes a positive electrode connection site and a negative electrode connection site.
  • the circuit layer 3 may include a patterned metal layer, and the material of the metal layer may be a single metal such as molybdenum (Mo), aluminum (Al), copper (Cu) or titanium (Ti), or an alloy.
  • the metal layer may be a single-layer structure or a multi-layer structure, and at least two layers in the multi-layer structure are of different materials.
  • the circuit layer 3 may be a printed circuit board (Printed Circuit Board, PCB), BT (Bismaleimide) Triazine) board, aluminum substrate, flexible circuit (Flexible Printed Circuit, FPC) board and other circuit board structures.
  • PCB printed Circuit Board
  • BT Bismaleimide
  • FPC Flexible Printed Circuit
  • the plurality of Mini-LEDs 4 are respectively electrically connected to the electrical connection positions, that is, the Mini-LEDs 4 are respectively electrically connected to a positive connection point and a negative connection point.
  • the external power supply is electrically connected to each Mini-LED4 through the electrical connection position, so as to provide light-emitting power for each Mini-LED4.
  • the number of the plurality of Mini-LED4 is not specifically limited, and can be selected according to actual needs.
  • Mini-LED light board should also include some other necessary structural components to ensure the normal operation of the Mini-LED light board, for example, an adhesive layer and the like.
  • the present application provides a method for preparing a Mini-LED lamp panel, which is used to prepare the Mini-LED lamp panel described in the first aspect. As shown in FIG. 3 , the method includes the following steps:
  • S1 Provide a substrate, and deposit a first reflective layer on one side of the substrate to form an entire surface.
  • a physical vapor deposition (Physical Vapor Deposition, PVD) process is used to deposit a first reflective layer on one side of the substrate to form an entire surface.
  • PVD Physical Vapor Deposition
  • the preparation of the circuit layer is a conventional technical means in the field.
  • the circuit layer can be directly prepared and formed on the first reflective layer by photolithography and etching processes, or inkjet printing (Ink-Jet printing) can be used to prepare the circuit layer. printing, IJP) process to form the circuit layer; or, first prepare a circuit board structure separately, and then adhere the circuit board structure to the side of the first reflective layer away from the substrate through an adhesive.
  • IJP inkjet printing
  • the step S2 includes the following steps:
  • a physical vapor deposition (Physical Vapor Deposition, PVD) process is used to deposit a metal layer on the first reflective layer to form an entire surface, and the material of the metal layer is preferably copper (Cu).
  • PVD Physical Vapor Deposition
  • a first photoresist layer is prepared on the side of the metal layer away from the first reflective layer to form an entire surface.
  • a photoresist material is first coated on the side of the metal layer away from the first reflective layer, and then dried to form the first photoresist layer.
  • the patterning treatment is a conventional technical means in the art, including processes such as exposure, development, and drying.
  • the metal layer may be patterned by wet etching, that is, chemical solution etching is used to remove the metal in the area not covered by the patterned first photoresist layer.
  • the remaining first photoresist layer on the patterned metal layer is removed; then, a second photoresist layer is deposited on the patterned metal layer; finally, on the first photoresist layer A plurality of electrical connection positions are etched on the two photoresist layers, and the etching method may be photo-etching, die-cutting or the like.
  • the step S2 includes:
  • step S2.1-b the step S2.1-b and the step S2.2-b can be performed in an alternate order or simultaneously.
  • the PCB board is prepared by using conventional technical means in the art, which will not be repeated here.
  • the adhesive is an adhesive with ideal light transmittance.
  • the plurality of Mini-LEDs are electrically connected to the respective electrical connection positions through Surface Mounted Technology (SMT).
  • SMT Surface Mounted Technology
  • the present application provides a backlight module, as shown in FIG. 6 and FIG. 7 , the backlight module includes: a Mini-LED lamp panel described in the first aspect and a second reflective layer 20 , the second reflective layer 20 is stacked on one side of the Mini-LED light board.
  • the second reflective layer 20 is provided with an opening at the position of each Mini-LED4, so that each Mini-LED4 is exposed. Due to the opening process, there is a gap between each of the openings and the edge of the corresponding Mini-LED4, but because the first reflective layer 2 with enhanced reflection effect is additionally provided, the light will not pass through the gap. leakage, thereby effectively improving the utilization of light.
  • the material of the second reflective layer 20 is white ink with reflective effect.
  • the thickness of the second reflective layer 20 is 5 microns to 10 microns, wherein each Mini-LED 4 protrudes from the upper surface of the second reflective layer 20 from the corresponding openings, that is, in a longitudinal direction,
  • the top of the second reflective layer 20 is not higher than the top of each Mini-LED 4 to ensure that each Mini-LED 4 has high light extraction efficiency.
  • the backlight module may also include some other structural components, such as: an optical film set, a protective layer, an outer frame, a plastic frame, an adhesive layer, a light-shielding layer, etc.
  • the necessary components for the normal operation of the backlight module may have the function of improving certain aspects of the performance of the backlight module.
  • the backlight module mainly includes: a Mini-LED lamp board, a second reflective layer 20 , an outer frame 30 , a plastic frame 40 , and a double-sided adhesive layer 50 . , a protective layer 60 , an optical film set 70 and a light shielding layer 80 .
  • the outer frame 30 is formed by a metal backboard 301 and four metal retaining walls 302 (only two metal retaining walls 302 are shown in FIG. 8 ).
  • the adhesive layer 50 , the Mini-LED lamp board, the second reflection layer 20 , the protective layer 60 and the optical film group 70 are stacked in sequence.
  • the plastic frame 40 is disposed around the double-sided adhesive layer 50 , the Mini-LED light board, the protective layer 60 and the optical film group 70 , and the plastic frame 40 is disposed on the metal On the back plate 301 , each of the metal retaining walls 302 is respectively disposed on the periphery of the plastic frame 40 .
  • the light shielding layer 80 is disposed on the top of each of the metal retaining walls 302 and extends to the top of a part of the optical film set 70 to ensure that each Mini-LED 4 is not blocked.
  • the outer frame 30 is the carrier of the overall structure of the backlight module, and is used to support each component of the backlight module.
  • the material of the outer frame 30 may be copper (Cu), aluminum (Al), alloy, or the like.
  • the metal back plate 301 and the four metal retaining walls 302 may be integrally formed structures or may not be integrally formed structures.
  • the double-sided adhesive layer 50 is used for adhering the Mini-LED light board 10 to the metal backplane 301 .
  • Mini-LED light board and the second reflective layer 20 and the relationship between them are as described above, and will not be repeated here.
  • the protective layer 60 covers the plurality of Mini-LEDs 4 and extends to the second reflection layer 20 .
  • the protective layer 60 is used to encapsulate the plurality of Mini-LEDs 4 to prevent the plurality of Mini-LEDs 4 from falling off and being exposed to moisture.
  • the material of the protective layer 60 may be silica gel, epoxy resin or other colloidal materials with high light transmittance.
  • the optical film set 70 may include one or more of prism sheets, quantum dot films, diffusion sheets, reflective polarizers, etc., so that the backlight module can be adapted to various applications.
  • the prism sheet can change the exit angle of light, thereby changing the viewing angle of the display device.
  • the quantum dot film can provide quantum dot emission with higher monochromaticity, thereby broadening the display color gamut of the display device and greatly improving the display brightness.
  • the reflective polarizer can improve the utilization rate of light, and at the same time make the outgoing light polarized, so that the lower polarizer in the liquid crystal display panel can be omitted.
  • air gap 10 between the light shielding layer 80 and the optical film group 70 , that is, in a longitudinal direction, the top of each of the metal retaining walls 302 is higher than the top of the optical film group 70 , so
  • the function of the air gap 10 is to reserve deformation space for the optical film group 70, the Mini-LED light board and other components, so as to avoid the deformation problem of the backlight module in a high temperature or low temperature environment.
  • the present application provides a method for preparing a backlight module for preparing the backlight module described in the third aspect, comprising the steps of: preparing a mini-LED lamp panel; and, in the miniature light-emitting diode A second reflection layer is formed by printing on one side of the lamp board, and the second reflection layer is respectively provided with an opening at the position of each of the micro light-emitting diodes, so that each of the micro-light-emitting diodes is exposed.
  • the second reflective layer can be prepared by printing methods such as jet printing and silk screen printing.
  • the preparation method of the backlight module further includes the steps of preparing some other structural components, which are necessary components to ensure the normal operation of the backlight module or have the ability to improve certain aspects of the backlight module. Aspects of performance, such as the steps of preparing optical film sets, protective layers, outer frames, plastic frames, adhesive layers, light-shielding layers and other structural components.
  • a method for preparing a backlight module is provided, which is used to prepare the backlight module as shown in FIG. 8 , as shown in FIG. 9 , and specifically includes the following steps:
  • S10 Provide an outer frame, and the outer frame is an integrated structure formed by a metal back plate and four metal retaining walls.
  • S40 Provide a Mini-LED light board, and attach the Mini-LED light board to the side of the metal backplane coated with the double-sided adhesive layer.
  • S70 Provide an assembled optical film group, and attach the optical film group to the side of the protective layer facing away from the Mini-LED light board.
  • a light-shielding glue is respectively attached to the top of each of the metal retaining walls to form a light-shielding layer, and the backlight module is obtained.
  • the outer frame can be integrally formed by a mold, and the process parameters are not specifically limited, and can be selected according to actual needs.
  • the Mini-LED light board is prepared by referring to the preparation method described in the second aspect.
  • the optical film set is assembled using conventional technical means in the art, and details are not described herein again.
  • an embodiment of the present application provides a display device, and the display device may be a mobile phone, a computer, a digital camera, a digital video camera, a game console, an audio reproduction device, an information terminal, a smart wearable device, a smart weighing device Any product or component with a display function, such as an electronic scale, a car display, a TV, etc., wherein the smart wearable device can be a smart bracelet, a smart watch, a smart glasses, etc.
  • the display device includes: a backlight module as described in the third aspect and a display panel, the display panel is located on the light-emitting side of the backlight module.
  • the backlight module can evenly emit light in the entire light-emitting surface, so as to provide the display panel with light with recombined brightness and uniform distribution, so that the display panel can display images normally.
  • the display panel has a plurality of pixel units distributed in an array, and each pixel unit can independently control the light transmittance and color of the backlight module incident therein, so as to modulate the light emitted by the backlight module, Realize image display.
  • the display panel may be a product in the prior art, such as a liquid crystal display panel, a quantum dot display panel, and the like.

Abstract

一种微型发光二极管灯板、背光模组及其制备方法，所述微型发光二极管灯板主要包括：依次层叠设置的一基板、一第一反射层、一电路层以及多个微型发光二极管，其中，所述多个微型发光二极管间隔设置于所述电路层上，所述微型发光二极管灯板可以作为背光模组的背光源，具有提高光线利用率、节约能耗的优点。

Description

一种微型发光二极管灯板、背光模组及其制备方法 技术领域
本申请涉及显示技术领域，尤其涉及一种微型发光二极管灯板、背光模组及其制备方法。
 背景技术
液晶显示器是显示面板市场上的主流产品。背光模组是液晶显示器的关键部件之一，用于提供充足且分布均匀的光源，使得液晶显示器可以显示图面。传统的背光模组通常包括背光源、导光板、光学膜片、胶框等部件，依光源分布位置不同，传统的背光模组分为侧光式背光模组和直下式背光模组两大类型。
传统的背光模组开启时，由于其上所有的背光源都会开启，所以液晶显示面板上无需显示的区域亦会受到背光照射，使得亮态和暗态之间对比度低。微型发光二极管(Mini-Light Emitting Diode, Mini-LED)背光模组具有显示性能佳、低功率、高亮度等特点，且Mini-LED背光模组开启时，并非所有的Mini-LED全部开启，而是开启与显示画面相匹配的Mini-LED，使得无需显示的区域呈现完全的暗态，从而实现高对比度。
 技术问题
现有Mini-LED背光模组包括Mini-LED灯板，如图1所示，所述Mini-LED灯板一般包括：一玻璃基板100；多个Mini-LED200(Mini-Light Emitting Diode, Mini-LED)，间隔设置所述玻璃基板100上；以及一白油反射层300，层叠设置于所述玻璃基板100上，所述白油反射层300在各个所述Mini-LED200的位置处设有一白油开孔，使得各个所述Mini-LED200在所述白油反射层300上露出。所述白油反射层300用于增强所述玻璃基板100对光线的反射效果，提高光线的利用率，避免所述玻璃基板100上未设有Mini-LED200的区域反射率低、光线损失率大的缺点。但是，由于开孔工艺的原因，无法确保所述白油开孔与所述Mini-LED200充分适配，即：所述白油开孔的孔缘与Mini-LED200的边缘之间具有空隙400，光线会从所述空隙400漏出，从而降低光线的利用率。
 技术解决方案
有鉴于现有技术的缺点，本申请的主要目的在于提供一种微型发光二极管灯板、背光模组及其制备方法，以改善现有Mini-LED背光模组存在的光线损失率大、光线利用率低的问题。
为达成本申请的前述目的，第一方面，本申请提供了一种微型发光二极管灯板，包括：
一基板；
一第一反射层，层叠设置于所述基板的一面上；
一电路层，层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位；以及
多个微型发光二极管，分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置。
进一步地，所述第一反射层为分布式布拉格反射镜结构。
作为本申请的一优选实施方案，所述第一反射层由依次层叠设置的一第一氮化硅层、一氧化硅层和一第二氮化硅层组成。
作为本申请的另一优选实施方案，所述第一反射层由依次层叠设置的一第一氮化硅层、一非晶矽层和一第二氮化硅层组成。
进一步地，所述电路层是印刷电路板、BT板、铝基板以及柔性电路板中的至少一者。
第二方面，本申请提供了一种背光模组，包括：
一微型发光二极管灯板，所述微型发光二极管灯板包括：一基板、一第一反射层、一电路层和多个微型发光二极管，所述第一反射层层叠设置于所述基板的一面上，所述电路层层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位，所述多个微型发光二极管分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置；以及
一第二反射层，层叠设置于所述微型发光二极管灯板的一面上，且所述第二反射层上设有多个间隔设置的开口，以将各个所述微型发光二极管露出。
进一步地，所述第二反射层的材质为具有反射作用的白色油墨。
进一步地，所述背光模组还包括：一保护层，覆盖于各个所述微型发光二极管和所述第二反射层上。
进一步地，所述保护层的材质为硅胶或环氧树脂。
进一步地，所述背光模组还包括：一光学膜片组，层叠设置于所述第二反射层背离所述微型发光二极管灯板的一面上。
进一步地，所述光学膜片组包括棱镜片、量子点膜、扩散片以及反射式偏光片中的一种或多种。
进一步地，所述背光模组还包括：一外框，所述外框由一金属背板和四个金属挡墙组成，所述金属背板、所述微型发光二极管灯板和所述第二反射层依次层叠设置，各个所述金属挡墙设置于所述微型发光二极管灯板和所述第二反射层的四周。
进一步地，所述背光模组还包括：一胶框，所述胶框设置于所述微型发光二极管灯板和所述第二反射层的四周，并且各个所述金属挡墙分别设置于所述胶框的外围。
进一步地，所述背光模组还包括：一双面胶层，设置于所述金属背板和所述微型发光二极管灯板之间。
进一步地，所述背光模组还包括：一遮光层，设置于各个所述金属挡墙的顶部。
第三方面，本申请提供了一种背光模组的制备方法，包括如下步骤：
制备一微型发光二极管灯板，所述微型发光二极管灯板包括：一基板；一第一反射层，层叠设置于所述基板的一面上；一电路层，层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位；以及多个微型发光二极管，分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置；以及
在所述微型发光二极管灯板的一面上印刷形成一第二反射层，所述第二反射层在各个微型发光二极管的位置处分别设有一开口，使得各个微型发光二极管露出。
进一步地，所述在所述微型发光二极管灯板的一面上印刷形成一第二反射层的步骤中，所述印刷是喷印工艺或丝印工艺。
进一步地，所述制备一微型发光二极管灯板，包括如下步骤：
提供一基板，在所述基板的一面上沉积形成整面的一第一反射层；
在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位；以及
将多个微型发光二极管分别电性连接于各个所述电性连接位上。
进一步地，所述在所述基板的一面上沉积形成整面的一第一反射层的步骤中，所述沉积是物理气相沉积工艺。
进一步地，所述在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位，包括如下步骤：
在第一反射层背离基板的一面上沉积形成整面的一金属层；
在所述金属层背离所述第一反射层的一面上制备形成整面的一第一光刻胶层；
对所述第一光刻胶层进行图案化处理，获得图案化的第一光刻胶层；
对所述金属层进行图案化处理，即去除所述图案化的第一光刻胶层未覆盖区域的金属，获得图案化的金属层；以及
在所述图案化的金属层上制备形成多个电性连接位。
 有益效果
本申请提供了一种微型发光二极管灯板，相较于现有的微型发光二极管灯板，增设了一第一反射层，所述第一反射层设置于基板与多个微型发光二极管之间，以解决现有微型发光二极管灯板存在的问题: 白油开孔的孔缘与对应的微型发光二极管的边缘之间具有空隙，光线会从所述空隙漏出，从而降低光线的利用率。在本申请的微型发光二极管灯板中，所述空隙内设有所述第一反射层以增强光线的反射效果，有效避免光线从所述空隙漏出，从而提高了光线的利用率，极大地降低了光线的损失率。所述微型发光二极管灯板所述微型发光二极管灯板可以作为背光模组的背光源，具有节约能耗的优点。
 附图说明
图1为现有技术中Mini-LED灯板的结构示意图。
图2为本申请提供的Mini-LED灯板的一个实施例的结构示意图。
图3为本申请提供的Mini-LED灯板的制备方法的一个实施例的流程示意图。
图4为图3中步骤S2的一个实施例的流程示意图。
图5为图4中步骤S2的另一个实施例的流程示意图。
图6为本申请提供的背光模组的一个实施例的横向截面示意图。
图7为本申请提供的背光模组的一个实施例的纵向截面示意图。
图8为本申请提供的背光模组的另一个实施例的结构示意图。
图9为本申请提供的背光模组的制备方法的一个实施例的流程示意图。
 本发明的实施方式
为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明如下。再者，本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
第一方面，如图2所示，本申请提供了一种微型发光二极管(Mini-Light Emitting Diode, Mini-LED)灯板，主要包括：一基板1、一第一反射层2、一电路层3以及多个Mini-LED4。所述第一反射层2层叠设置于所述基板1的一面上，所述电路层3层叠设置于所述第一反射层2背离所述基板1的一面上，所述多个Mini-LED4间隔设置于所述电路层3上。
所述基板1用于承载多个Mini-LED4，所述基板1的材质可以是玻璃。此外，所述基板1对Mini-LED4发出的光线具有反射的作用，以降低光线的损失率。
所述第一反射层2为分布式布拉格反射镜结构，即：由两种不同折射率的材料层交替设置而形成的复合层结构。所述第一反射层2可以提高光线的利用率，增强光线的反射效果。
作为一优选的实施方案，所述第一反射层2由依次层叠设置的一第一氮化硅(SiNx)层、一氧化硅(SiOx)层和一第二氮化硅层组成。
作为另一优选的实施方案，所述第一反射层2由依次层叠设置的一第一氮化硅(SiNx)层、一非晶矽(a-Si)层和一第二氮化硅(SiNx)层组成。
需要说明的是，所述第一反射层2的整体厚度，以及组成所述第一反射层2的各个材料层的厚度不作具体限定，可依据实际需要自行选择。
所述电路层3上设有多个电性连接位，每个所述电性连接位包括一正极连接位点和一负极连接位点。所述电路层3可以包括图案化的金属层，所述金属层的材质可以是钼(Mo)、铝(Al)、铜(Cu) 或钛(Ti)等单种金属，也可以是合金，并且所述金属层可以是单层结构，也可以是多层结构，所述多层结构中至少两层的材质不相同。
作为一优选的实施方案，所述电路层3可以是印刷电路板(Printed Circuit Board, PCB)、BT(Bismaleimide Triazine)板、铝基板、柔性电路(Flexible Printed Circuit, FPC)板等电路板结构。
所述多个Mini-LED4分别电性连接于各个所述电性连接位上，即：各个Mini-LED4分别电性连接于一正极连接位点和一负极连接位点上。外部的电源通过所述电性连接位与各个Mini-LED4电性连接，从而为各个Mini-LED4提供发光的电力。所述多个Mini-LED4的数量不作具体限定，可依据实际需要自行选择。
本领域技术人员可以理解，所述Mini-LED灯板还应包括一些其他所必需的结构件，以确保所述Mini-LED灯板正常工作，例如：胶层等。
第二方面，本申请提供了一种Mini-LED灯板的制备方法，用于制备第一方面中所述的Mini-LED灯板，如图3所示，包括如下步骤：
S1、提供一基板，在所述基板的一面上沉积形成一整面的一第一反射层。
在一个实施例中，采用物理气相沉积(Physical Vapor Deposition, PVD)工艺在所述基板的一面上沉积形成一整面的一第一反射层。
S2、在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位。
具体的，制备电路层为本领域常规技术手段，可以直接在所述第一反射层上利用光刻与刻蚀工艺制备形成所述电路层，也可以采用喷墨印刷(Ink-Jet printing, IJP )工艺制备形成所述电路层；或者，先单独制备一电路板结构，然后将所述电路板结构通过胶合剂粘附于所述第一反射层背离所述基板的一面上。
在一个实施例中，如图4所示，所述步骤S2包括如下步骤：
S2.1-a、在第一反射层背离基板的一面上沉积形成整面的一金属层。
具体的，采用物理气相沉积(Physical Vapor Deposition, PVD)工艺在所述第一反射层上沉积形成整面的一金属层，所述金属层的材质优选为铜(Cu)。
S2.2-a、在所述金属层背离所述第一反射层的一面上制备形成整面的一第一光刻胶层。
具体的，先将光刻胶材料涂布于所述金属层背离所述第一反射层的一面上，然后烘干，形成所述第一光刻胶层。
S2.3-a、对所述第一光刻胶层进行图案化处理，获得图案化的第一光刻胶层。
具体的，所述图案化处理为本领域常规技术手段，包括曝光、显影、烘干等工序。
S2.4-a、对所述金属层进行图案化处理，即去除所述图案化的第一光刻胶层未覆盖区域的金属，获得图案化的金属层。
具体的，可以采用湿法刻蚀方式对所述金属层进行图案化处理，即利用化学溶液腐蚀去除所述图案化的第一光刻胶层未覆盖区域的金属。
S2.5-a、在所述图案化的金属层上制备形成多个电性连接位。
具体的，首先，去除所述图案化的金属层上剩余的所述第一光刻胶层；然后，在所述图案化的金属层上沉积第二光刻胶层；最后，在所述第二光刻胶层上刻蚀出多个电性连接位，所述刻蚀方式可以是光刻蚀、刀模冲切等。
在另一个实施例中，如图5所示，所述步骤S2包括：
S2.1-b、制备一PCB板，所述PCB板上设有多个电性连接位。
S2.2-b、在第一反射层背离基板的一面上均匀涂覆一胶合剂，获得一胶层。
S2.3-b、将所述PCB板与所述基板对向贴合，形成基板-PCB板一体化结构。
对步骤S2.1-b至步骤S2.3-b需要说明的是，所述步骤S2.1-b和所述步骤S2.2-b可以交换顺序进行，也可以同时进行。在所述步骤S2.1-b中，采用本领域常规技术手段制备PCB板，在此不再赘述。在所述步骤S2.2-b中，所述胶合剂为透光性理想的胶。
S3、将多个Mini-LED分别电性连接于各个所述电性连接位上。
具体的，通过表面组装技术(Surface Mounted Technology, SMT)将多个Mini-LED分别电性连接于各个电性连接位上。
第三方面，本申请提供了一种背光模组，如图6和图7所示，所述背光模组包括：一第一方面中所述的Mini-LED灯板以及一第二反射层20，所述第二反射层20层叠设置于所述Mini-LED灯板的一面上。
所述第二反射层20在各个Mini-LED4的位置处分别设有一开口，使得各个Mini-LED4露出。由于开口工艺的原因，各个所述开口与对应的Mini-LED4的边缘之间具有一空隙，但因额外设置了具有增强反射效果的所述第一反射层2，所以光线不会从所述空隙中漏出，从而有效地提高了光线的利用率。
在一实施例中，所述第二反射层20的材质为具有反射作用的白色油墨。所述第二反射层20的厚度为5微米至10微米，其中，各个Mini-LED4从对应的各个开口处凸伸出所述第二反射层20的上表面外，即：在一纵向上，所述第二反射层20的顶部不高于各个Mini-LED4的顶部，以保证各个Mini-LED4具有较高的出光效率。
本领域技术人员可以理解，所述背光模组还可以包括一些其他的结构件，例如：光学膜片组、保护层、外框、胶框、胶层、遮光层等，这些结构件是保证所述背光模组正常工作的必需组成元件或具有提升所述背光模组某方面性能的作用。
在一实施例中，如图8所示，所述背光模组主要包括：一Mini-LED灯板、一第二反射层20、一外框30、一胶框40、一双面胶层50、一保护层60、一光学膜片组70以及一遮光层80。其中，所述外框30是由一金属背板301和四个金属挡墙302(图8中仅示出两个金属挡墙302)围合形成，所述金属背板301、所述双面胶层50、所述Mini-LED灯板、所述第二反射层20、所述保护层60以及所述光学膜片组70依次层叠设置。所述胶框40设置于所述双面胶层50、所述Mini-LED灯板、所述保护层60以及所述光学膜片组70的四周，并且所述胶框40设置于所述金属背板301上，各个所述金属挡墙302分别设置于所述胶框40的外围。所述遮光层80设置于各个所述金属挡墙302的顶部，并延伸至所述光学膜片组70的部分区域的上方，以确保不遮挡各个Mini-LED4。
所述外框30是所述背光模组的整体结构的承载，用于支撑所述背光模组的各个组成元件。所述外框30的材质可以为铜(Cu)、铝(Al)、合金等。所述金属背板301和所述四个金属挡墙302可以是一体成型结构，也可以不是一体成型结构。所述双面胶层50用于将所述Mini-LED灯板10粘附于所述金属背板301上。
所述Mini-LED灯板和所述第二反射层20的结构组成，以及两者之间的关系如上所述，在此不再赘述。
所述保护层60覆盖于所述多个Mini-LED4上，并延伸至所述第二反射层20上。所述保护层60用于封装所述多个Mini-LED4，以避免所述多个Mini-LED4出现脱落、受潮等问题。所述保护层60的材质可以是硅胶、环氧树脂或其它具有较高光透过率的胶体材料。
所述光学膜片组70可以包括棱镜片、量子点膜、扩散片、反射式偏光片等中的一种或多种，以使背光模组适应多样化的应用。例如，棱镜片可以改变光线的出射角度，从而改变显示装置的可观看角度。量子点膜可以提供单色性更高的量子点发光，从而拓宽显示装置的显示色域，以及大幅度地提升显示亮度。反射式偏光片可以提高光线的利用率，同时使出射光线具有偏振性，从而可以省略液晶显示面板中的下偏光片。
所述遮光层80和所述光学膜片组70之间具有一空气间隙10，即：在一纵向上，各个所述金属挡墙302的顶部高于所述光学膜片组70的顶部，所述空气间隙10的作用是：为所述光学膜片组70、所述Mini-LED灯板等组成元件留存形变的空间，从而避免所述背光模组在高温或低温环境下出现变形的问题。
第四方面，本申请提供了一种背光模组的制备方法，用于制备第三方面中所述的背光模组，包括步骤：制备一mini-LED灯板；以及，在所述微型发光二极管灯板的一面上印刷形成一第二反射层，所述第二反射层在各个所述微型发光二极管的位置处分别设有一开口，使得各个所述微型发光二极管露出。
其中，所述mini-LED灯板的制备方法详见第二方面中所述，在此不再赘述。可以采用喷印、丝印等印刷方式制备所述第二反射层。
本领域技术人员可以理解，所述背光模组的制备方法还包括制备一些其他结构件的步骤，这些结构件是保证所述背光模组正常工作的必需组成元件或具有提升所述背光模组某方面性能的作用，例如：制备光学膜片组、保护层、外框、胶框、胶层、遮光层等结构件的步骤。
在一实施例中，提供了一种背光模组的制备方法，用于制备如图8所示的背光模组，如图9所示，具体包括如下步骤：
S10、提供一外框，所述外框是由一金属背板和四个金属挡墙围合形成的一体化结构。
S20、提供一胶框，将所述胶框贴附于所述金属背板的一面上。
S30、在所述胶框内的所述金属背板的一面上均匀涂覆一胶合剂，烘干形成所述双面胶层。
S40、提供一Mini-LED灯板，将所述Mini-LED灯板贴附于所述金属背板涂覆有所述双面胶层的一面上。
S50、在所述Mini-LED灯板背离所述金属背板的一面上，采用丝印工艺印刷形成一第二反射层。
S60、在多个Mini-LED和所述第二反射层的表面上喷涂形成一保护层。
S70、提供一组装好的光学膜片组，将所述光学膜片组贴附于所述保护层背离所述Mini-LED灯板的一面上。
S80、在各个所述金属挡墙的顶部分别贴附一遮光胶，以形成一遮光层，获得所述背光模组。
对上述步骤需要说明的是，在所述步骤S10中，所述外框可以通过模具一体成型，工艺参数不作具体限定，可依据实际需要自行选择。在所述步骤S40中，所述Mini-LED灯板参照第二方面中所述的制备方法制得。在所述步骤S70中，所述光学膜片组采用本领域的常规技术手段进行组装，在此不再赘述。
第五方面，本申请实施例提供了一种显示装置，所述显示装置可为手机、电脑、数码相机、数码摄像机、游戏机、音频再生装置、信息终端机、智能可穿戴设备、智能称重电子秤、车载显示器、电视机等任何具有显示功能的产品或部件，其中，所述智能可穿戴设备可为智能手环、智能手表、智能眼镜等。
所述显示装置包括：一如第三方面中所述的背光模组以及一显示面板，所述显示面板位于所述背光模组的出光侧。所述背光模组可以在整个出光面内均匀的发出光线，用于为所述显示面板提供亮度重组且分布均匀的光线，以使所述显示面板可以正常显示影像。
所述显示面板具有多个呈阵列分布的像素单元，每个像素单元都可以独立控制背光模组入射于其内的光线透过率和色彩，以对所述背光模组射出的光线进行调制，实现图像显示。所述显示面板可以是现有技术中的产品，例如：液晶显示面板、量子点显示面板等。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (20)

  1. 一种微型发光二极管灯板，其中，包括：
    一基板；
    一第一反射层，层叠设置于所述基板的一面上；
    一电路层，层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位；以及
    多个微型发光二极管，分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置。
  2. 根据权利要求1所述的微型发光二极管灯板，其中，所述第一反射层为分布式布拉格反射镜结构。
  3. 根据权利要求2所述的微型发光二极管灯板，其中，所述第一反射层由依次层叠设置的一第一氮化硅层、一氧化硅层和一第二氮化硅层组成。
  4. 据权利要求2所述的微型发光二极管灯板，其中，所述第一反射层由依次层叠设置的一第一氮化硅层、一非晶矽层和一第二氮化硅层组成。
  5. 根据权利要求1所述的微型发光二极管灯板，其中，所述电路层是印刷电路板、BT板、铝基板以及柔性电路板中的至少一者。
  6. 一种背光模组，其中，包括：
    一微型发光二极管灯板，所述微型发光二极管灯板包括：一基板、一第一反射层、一电路层和多个微型发光二极管，所述第一反射层层叠设置于所述基板的一面上，所述电路层层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位，所述多个微型发光二极管分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置；以及
    一第二反射层，层叠设置于所述微型发光二极管灯板的一面上，且所述第二反射层上设有多个间隔设置的开口，以将各个所述微型发光二极管露出。
  7. 根据权利要求6所述的背光模组，其中，所述第二反射层的材质为具有反射作用的白色油墨。
  8. 根据权利要求6所述的背光模组，其中，所述背光模组还包括：一保护层，覆盖于各个所述微型发光二极管和所述第二反射层上。
  9. 根据权利要求8所述的背光模组，其中，所述保护层的材质为硅胶或环氧树脂。
  10. 根据权利要求6所述的背光模组，其中，所述背光模组还包括：一光学膜片组，层叠设置于所述第二反射层背离所述微型发光二极管灯板的一面上。
  11. 根据权利要求10所述的背光模组，其中，所述光学膜片组包括棱镜片、量子点膜、扩散片以及反射式偏光片中的一种或多种。
  12. 根据权利要求6所述的背光模组，其中，所述背光模组还包括：一外框，所述外框由一金属背板和四个金属挡墙组成，所述金属背板、所述微型发光二极管灯板和所述第二反射层依次层叠设置，各个所述金属挡墙设置于所述微型发光二极管灯板和所述第二反射层的四周。
  13. 根据权利要求12所述的背光模组，其中，所述背光模组还包括：一胶框，所述胶框设置于所述微型发光二极管灯板和所述第二反射层的四周，并且各个所述金属挡墙分别设置于所述胶框的外围。
  14. 根据权利要求12所述的背光模组，其中，所述背光模组还包括：一双面胶层，设置于所述金属背板和所述微型发光二极管灯板之间。
  15. 根据权利要求12所述的背光模组，其中，所述背光模组还包括：一遮光层，设置于各个所述金属挡墙的顶部。
  16. 一种背光模组的制备方法，其中，包括如下步骤：
    制备一微型发光二极管灯板，所述微型发光二极管灯板包括：一基板；一第一反射层，层叠设置于所述基板的一面上；一电路层，层叠设置于所述第一反射层背离所述基板的一面上，且所述电路层上设有多个电性连接位；以及多个微型发光二极管，分别电性连接于各个所述电性连接位上，并且所述多个微型发光二极管间隔设置；以及
    在所述微型发光二极管灯板的一面上印刷形成一第二反射层，所述第二反射层在各个微型发光二极管的位置处分别设有一开口，使得各个微型发光二极管露出。
  17. 根据权利要求16所述的背光模组的制备方法，其中，所述在所述微型发光二极管灯板的一面上印刷形成一第二反射层的步骤中，所述印刷是喷印工艺或丝印工艺。
  18. 根据权利要求16所述的背光模组的制备方法，其中，所述制备一微型发光二极管灯板，包括如下步骤：
    提供一基板，在所述基板的一面上沉积形成整面的一第一反射层；
    在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位；以及
    将多个微型发光二极管分别电性连接于各个所述电性连接位上。
  19. 根据权利要求18所述的背光模组的制备方法，其中，所述在所述基板的一面上沉积形成整面的一第一反射层的步骤中，所述沉积是物理气相沉积工艺。
  20. 根据权利要求18所述的背光模组的制备方法，其中，所述在所述第一反射层背离所述基板的一面上制备形成一电路层，所述电路层上设有多个电性连接位，包括如下步骤：
    在第一反射层背离基板的一面上沉积形成整面的一金属层；
    在所述金属层背离所述第一反射层的一面上制备形成整面的一第一光刻胶层；
    对所述第一光刻胶层进行图案化处理，获得图案化的第一光刻胶层；
    对所述金属层进行图案化处理，即去除所述图案化的第一光刻胶层未覆盖区域的金属，获得图案化的金属层；以及
    在所述图案化的金属层上制备形成多个电性连接位。
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