WO2022070917A1 - Procédé de formation de film et dispositif de formation de film - Google Patents

Procédé de formation de film et dispositif de formation de film Download PDF

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Publication number
WO2022070917A1
WO2022070917A1 PCT/JP2021/033911 JP2021033911W WO2022070917A1 WO 2022070917 A1 WO2022070917 A1 WO 2022070917A1 JP 2021033911 W JP2021033911 W JP 2021033911W WO 2022070917 A1 WO2022070917 A1 WO 2022070917A1
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WO
WIPO (PCT)
Prior art keywords
film
gas
convex portion
film forming
forming method
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Application number
PCT/JP2021/033911
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English (en)
Japanese (ja)
Inventor
敏夫 長谷川
Original Assignee
東京エレクトロン株式会社
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Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2022070917A1 publication Critical patent/WO2022070917A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • This disclosure relates to a film forming method and a film forming apparatus.
  • a technique is known in which deposition and etching are repeated at least once on a convex portion having a side wall and an upper end portion to selectively form a film on the upper end portion of the convex portion (see, for example, Patent Document 1).
  • the present disclosure provides a technique capable of selectively forming a high-density film on a convex portion.
  • the film forming method is a substrate having a convex portion on the surface, and the convex portion is a step of preparing a substrate having a side surface and an upper surface, and a film is deposited on a region including the side surface and the upper surface.
  • a high-density film can be selectively formed on a convex portion.
  • a flowchart showing an example of the film forming method of the embodiment A process sectional view showing an example of the film forming method of the embodiment. A process sectional view showing an example of the film forming method of the embodiment. A process sectional view showing an example of the film forming method of the embodiment. A process sectional view showing an example of the film forming method of the embodiment. A process sectional view showing an example of the film forming method of the embodiment. A flowchart showing another example of the film forming method of the embodiment. Schematic cross-sectional view showing an example of a film forming apparatus that implements the film forming method of the embodiment.
  • a substrate 100 having a convex portion 110 on the surface is prepared (preparation step S11).
  • the substrate 100 may be a semiconductor wafer such as a silicon wafer.
  • the protrusion 110 has a side surface 111 and an upper surface 112.
  • the convex portion 110 may be, for example, a convex portion of a trench.
  • the film 120 is deposited in the region including the side surface 111 and the upper surface 112 of the convex portion 110 of the substrate 100 prepared in the preparation step S11 (deposition step S12).
  • the deposition step S12 it is preferable to deposit the film 120 thicker on the upper surface 112 than on the side surface 111 of the convex portion 110. This facilitates the removal of the low-density film 121 in the etching step S14 described later.
  • the film is supplied in a rate-determining state by chemical vapor deposition (CVD) or atomic layer deposition (ALD).
  • a method of depositing 120 can be suitably used.
  • the rate-determining state of supply means a region in which the flow rate of the raw material gas supplied into the processing container is very small, and the film formation rate is mainly controlled by the supply amount of the raw material gas.
  • the supply rate-determining state can be realized by reducing the supply amount of the raw material gas and raising the processing temperature.
  • the membrane 120 is, for example, a membrane that becomes denser when exposed to plasma.
  • the film 120 include, but are not limited to, an oxide film containing silicon (Si) or a metal, a nitride film, and a carbide film.
  • the film 120 include TiN, TiO 2 , Al 2 O 3 , HfO, ZrO, SnO, NbO, MoO, VO, WO, SiO 2 , SiN, SiC, SiCN, SiOC, and SiOCN.
  • the raw material gas is selected according to the type of the film 120 to be deposited. For example, when a Si oxide film is deposited, the raw material gas contains a Si-containing gas and an oxidizing gas. For example, when depositing a Si nitride film, the raw material gas contains a Si-containing gas and a nitride gas. For example, when depositing a Si carbide film, the raw material gas contains a Si-containing gas and a carbide gas.
  • the raw material gas when depositing a metal oxide film, a metal nitride film and a metal carbide film, the raw material gas includes a metal-containing gas and an oxidation gas, a nitride gas and a carbonized gas.
  • the metal-containing gas include TiCl 4 , HfCl 4 , ZrCl 4 , AlCl 3 , TDMA-Ti / Hf / Zr, TDEAT-Ti / Hf / Zr, and TEMAT-Ti / Hf / Zr.
  • FIG. 2B shows an example in which the film 120 is not deposited on the bottom surface portion 113, which is a region between adjacent convex portions 110, the film 120 may be deposited on the bottom surface portion 113.
  • the film 120 is exposed to plasma to increase the density of the film 120 deposited on the upper surface 112 rather than the side surface 111 of the convex portion 110 (high density step S13). Since the ions contained in the plasma enter the surface of the substrate 100 and the upper surface 112 of the convex portion 110 with directivity in a direction perpendicular to the surface, the upper surface 112 of the convex portion 110 is selectively modified to increase the density. As a result, the low-density film 121 that has not been densified remains on the side surface 111 of the convex portion 110, and the high-density film 122 that has been densified is formed on the upper surface 112 of the convex portion 110.
  • the frequency of the plasma may be, for example, 450 kHz to 60 MHz.
  • inductively coupled plasma may be used.
  • the gas for generating plasma include rare gas, mixed gas of H 2 gas and rare gas, N 2 gas, NH 3 gas, and O 2 gas. ..
  • the rare gas include He gas and Ar gas.
  • the etching conditions are selected so as to be, for example, isotropic etching.
  • the etching agent may be an etching gas or an etching solution. In the case of dry etching using an etching gas as an etching agent, etching may be performed using plasma or etching using no plasma.
  • etching without plasma is preferable from the viewpoint that the low-density film 121 deposited on the side surface 111 of the convex portion 110 can be easily removed selectively.
  • the etching gas include Cl 2 , HF, ClF 3 , HCl, NF 3 , CF 4 , and C 4 F 8 .
  • the etching solution includes, for example, DHF (Diluted HF), H2O 2 , HCl, APM (Ammonia hydrogen Peroxide Mixture), SPM (Sulfuric hydrogen Peroxide Mixture), HPM (Hydrochloric). Hydrogen Peroxide Mixture), H 3 PO 4 .
  • the process returns to the deposition step S12, and if the number of repetitions of the cycle has reached the set number, the process ends.
  • the high-density film 122 can be selectively formed on the upper surface 112 of the convex portion 110.
  • the film is deposited on the region including the side surface and the upper surface of the convex portion, and then the film is exposed to plasma to be more than the side surface.
  • the film deposited on the upper surface is densified, and then an etching agent is supplied to the film to selectively leave the film on the upper surface of the convex portion. This makes it possible to selectively form a high-density film on the convex portion.
  • FIG. 3 another example of the film forming method of the embodiment will be described.
  • the film forming method shown in FIG. 3 is different from the film forming method shown in FIGS. 1 and 2A to 2E in that an etching step is performed after repeating a cycle including a deposition step and a densification step a plurality of times.
  • an etching step is performed after repeating a cycle including a deposition step and a densification step a plurality of times.
  • preparation step S21 a substrate having a convex portion on the surface is prepared (preparation step S21).
  • the preparation step S21 is the same as the preparation step S11 described above.
  • deposition step S22 a film is deposited on the region including the side surface and the upper surface of the convex portion of the substrate prepared in the preparation step S21 (deposition step S22).
  • the deposition step S22 is the same as the above-mentioned deposition step S12.
  • the densification step S23 is the same as the densification step S13 described above.
  • first determination step S24 it is determined whether or not the number of repetitions of the cycle including the deposition step S22 and the densification step S23 has reached the set number of times. If the number of repetitions of the cycle has not reached the set number, the process returns to the deposition step S22, and if the number of repetitions of the cycle has reached the set number, the process proceeds to the next step.
  • etching step S25 is the same as the etching step S14 described above.
  • the process determines whether or not the set number of times is reached by performing the etching step S25 after repeating the cycle including the deposition step S22 and the densification step S23 a plurality of times (second determination step S26).
  • the number of settings is determined, for example, according to the film thickness of the film formed on the upper surface of the convex portion. If the number of repetitions of the cycle has not reached the set number, the process returns to the deposition step S22, and if the number of repetitions of the cycle has reached the set number, the process ends. By repeating the cycle in this way, a high-density film can be selectively formed on the upper surface of the convex portion.
  • the film is deposited on the region including the side surface and the upper surface of the convex portion, and then the film is exposed to plasma to form the film deposited on the upper surface rather than the side surface.
  • the density is increased, and then an etching agent is supplied to the film to selectively leave the film on the upper surface of the convex portion. This makes it possible to selectively form a high-density film on the convex portion.
  • the etching step S25 is performed after repeating the cycle including the deposition step S22 and the densification step S23 a plurality of times.
  • the productivity is improved as compared with the case where the etching step S25 is performed every time the deposition step S22 and the densification step S23 are performed.
  • the film forming apparatus 1 includes a substantially cylindrical airtight processing container 2.
  • the processing container 2 houses the substrate W inside.
  • An exhaust chamber 21 is provided at the center of the bottom wall of the processing container 2.
  • the exhaust chamber 21 has, for example, a substantially cylindrical shape that protrudes downward.
  • An exhaust pipe 22 is connected to the exhaust chamber 21, for example, on the side surface of the exhaust chamber 21.
  • the exhaust section 24 is connected to the exhaust pipe 22 via the pressure adjusting section 23.
  • the pressure adjusting unit 23 includes a pressure adjusting valve such as a butterfly valve.
  • the exhaust pipe 22 is configured so that the inside of the processing container 2 can be depressurized by the exhaust unit 24.
  • a transport port 25 is provided on the side surface of the processing container 2. The transport port 25 is opened and closed by the gate valve 26. The loading of the substrate W into the processing container 2 and the loading of the substrate W from the processing container 2 are performed through the transport port 25.
  • a stage 3 is provided in the processing container 2.
  • the stage 3 is a holding portion that holds the substrate W horizontally with the surface of the substrate W facing up.
  • the stage 3 is formed in a substantially circular shape in a plan view, and is supported by the support member 31.
  • the recess 32 has an inner diameter slightly larger than the diameter of the substrate W.
  • the depth of the recess 32 is configured to be substantially the same as the thickness of the substrate W, for example.
  • the stage 3 is made of a ceramic material such as aluminum nitride (AlN). Further, the stage 3 may be formed of a metal material such as nickel (Ni).
  • a guide ring for guiding the substrate W may be provided on the peripheral edge of the surface of the stage 3.
  • a grounded lower electrode 33 is embedded in the stage 3.
  • a heating mechanism 34 is embedded below the lower electrode 33.
  • the heating mechanism 34 heats the substrate W mounted on the stage 3 to a set temperature by supplying power from a power supply unit (not shown) based on a control signal from the control unit 90.
  • the entire stage 3 is made of metal, the entire stage 3 functions as a lower electrode, so that the lower electrode 33 does not have to be embedded in the stage 3.
  • the stage 3 is provided with a plurality of (for example, three) elevating pins 41 for holding and elevating the substrate W mounted on the stage 3.
  • the material of the elevating pin 41 may be, for example, ceramics such as alumina (Al 2 O 3 ), quartz, or the like.
  • the lower end of the elevating pin 41 is attached to the support plate 42.
  • the support plate 42 is connected to an elevating mechanism 44 provided outside the processing container 2 via an elevating shaft 43.
  • the elevating mechanism 44 is installed, for example, at the lower part of the exhaust chamber 21.
  • the bellows 45 is provided between the opening 211 for the elevating shaft 43 formed on the lower surface of the exhaust chamber 21 and the elevating mechanism 44.
  • the shape of the support plate 42 may be a shape that can be raised and lowered without interfering with the support member 31 of the stage 3.
  • the elevating pin 41 is vertically configured by the elevating mechanism 44 between above the surface of the stage 3 and below the surface of the stage 3.
  • the top wall 27 of the processing container 2 is provided with a gas supply unit 5 via an insulating member 28.
  • the gas supply unit 5 forms an upper electrode and faces the lower electrode 33.
  • An RF power supply 512 is connected to the gas supply unit 5 via a matching unit 511.
  • the RF power supply 512 supplies RF power of, for example, 450 kHz to 100 MHz to the upper electrode (gas supply unit 5).
  • a high-frequency electric field is generated between the upper electrode (gas supply unit 5) and the lower electrode 33, and capacitively coupled plasma is generated.
  • the plasma generation unit 51 includes a matching unit 511 and an RF power supply 512.
  • the plasma generation unit 51 is not limited to capacitively coupled plasma, and may generate other plasma such as inductively coupled plasma.
  • the gas supply unit 5 includes a hollow gas supply chamber 52. On the lower surface of the gas supply chamber 52, for example, a large number of holes 53 for dispersing and supplying the processing gas into the processing container 2 are evenly arranged.
  • a heating mechanism 54 is embedded above, for example, the gas supply chamber 52 in the gas supply unit 5. The heating mechanism 54 is heated to a set temperature by supplying power from a power supply unit (not shown) based on a control signal from the control unit 90.
  • the gas introduction path 6 communicates with the gas supply chamber 52.
  • the other end of the gas introduction path 6 is connected to the gas source 61 via the gas line 62.
  • the gas source 61 includes, for example, various processing gas supply sources, a mass flow controller, and valves (none of which are shown).
  • the various treatment gases include a raw material gas, a plasma generation gas, and an etching gas used in the film forming method of the above-described embodiment.
  • gases are introduced from the gas source 61 into the gas supply chamber 52 via the gas line 62 and the gas introduction path 6.
  • the film forming apparatus 1 includes a control unit 90.
  • the control unit 90 implements, for example, the above-mentioned film forming method by controlling each part of the film forming apparatus 1.
  • the control unit 90 may be, for example, a computer.
  • the computer program that operates each part of the film forming apparatus 1 is stored in the storage medium.
  • the storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.
  • control unit 90 opens the gate valve 26 and conveys the substrate W having a convex portion on the surface into the processing container 2 by a transfer mechanism (not shown) and places it on the stage 3 (preparation step S11). ..
  • the substrate W is placed horizontally with its surface facing up.
  • the control unit 90 closes the gate valve 26 after retracting the transport mechanism from the processing container 2.
  • the control unit 90 heats the substrate W to a predetermined temperature by the heating mechanism 34 of the stage 3, and adjusts the inside of the processing container 2 to a predetermined pressure by the pressure adjusting unit 23.
  • control unit 90 controls each part of the film forming apparatus 1 to carry out the film forming method of the above-described embodiment. That is, the control unit 90 controls the pressure adjusting unit 23, the plasma generation unit 51, the gas source 61, and the like to perform the deposition step S12, the densification step S13, the etching step S14, and the determination step S15. This makes it possible to selectively form a high-density film on the convex portion formed on the surface of the substrate W.
  • control unit 90 sets the substrate W in the reverse procedure of carrying the substrate W into the processing container 2. Carry out from the processing container 2.
  • the film forming apparatus is a single-wafer type apparatus that processes substrates one by one
  • the present disclosure is not limited to this.
  • a plurality of substrates arranged on a rotary table in the processing container are revolved by the rotary table, and a region to which the first gas is supplied and a region to which the second gas is supplied are sequentially revolved.
  • It may be a semi-batch type device that passes through and processes the substrate.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Un procédé de formation de film selon un mode de réalisation de la présente invention comprend : une étape pour préparer un substrat qui comporte une saillie sur la surface associée, la saillie comprenant une surface latérale et une surface supérieure ; une étape pour déposer un film dans une région qui comprend la surface latérale et la surface supérieure ; une étape pour exposer le film à un plasma et amener le film déposé sur la surface supérieure à avoir une densité supérieure à celle sur la surface latérale ; et une étape pour former sélectivement un film sur la surface supérieure en éliminant au moins le film déposé sur la surface latérale.
PCT/JP2021/033911 2020-09-29 2021-09-15 Procédé de formation de film et dispositif de formation de film WO2022070917A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-163169 2020-09-29
JP2020163169A JP2022055633A (ja) 2020-09-29 2020-09-29 成膜方法及び成膜装置

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WO2022070917A1 true WO2022070917A1 (fr) 2022-04-07

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722339A (ja) * 1993-07-05 1995-01-24 Toshiba Corp 薄膜形成方法
US20180286663A1 (en) * 2017-03-29 2018-10-04 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
JP2019134062A (ja) * 2018-01-31 2019-08-08 東京エレクトロン株式会社 選択的成膜方法および成膜装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722339A (ja) * 1993-07-05 1995-01-24 Toshiba Corp 薄膜形成方法
US20180286663A1 (en) * 2017-03-29 2018-10-04 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
JP2019134062A (ja) * 2018-01-31 2019-08-08 東京エレクトロン株式会社 選択的成膜方法および成膜装置

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