WO2022068812A1 - 一种铜钨合金材料及其制备方法和应用 - Google Patents

一种铜钨合金材料及其制备方法和应用 Download PDF

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WO2022068812A1
WO2022068812A1 PCT/CN2021/121307 CN2021121307W WO2022068812A1 WO 2022068812 A1 WO2022068812 A1 WO 2022068812A1 CN 2021121307 W CN2021121307 W CN 2021121307W WO 2022068812 A1 WO2022068812 A1 WO 2022068812A1
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copper
alloy material
tungsten alloy
content
graphene
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PCT/CN2021/121307
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English (en)
French (fr)
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祝志祥
丁一
陈保安
张强
朱承治
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全球能源互联网研究院有限公司
国家电网有限公司
国网浙江省电力有限公司
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Priority to AU2021354815A priority Critical patent/AU2021354815B2/en
Publication of WO2022068812A1 publication Critical patent/WO2022068812A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0475—Impregnated alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon

Definitions

  • the present disclosure relates to the technical field of electrical materials, in particular to a copper-tungsten alloy material and a preparation method and application thereof.
  • SF6 circuit breakers are mainly used in high-voltage, ultra-high-voltage and ultra-high-voltage power transmission and transformation systems of 110kV and above in my country, while vacuum circuit breakers are mostly used in power distribution systems below 35kV.
  • the application of high-power SF6 circuit breaker is mainly CuW80 alloy material.
  • the CuW80 alloy material is prone to serious arc burning after 5-6 times of full capacity breaking, and the contacts must be fully maintained and repaired. Therefore, it is of great significance to study and improve the performance indicators such as electrical conductivity of electrical contact materials for high-voltage and high-power SF6 circuit breakers to reduce the failure rate of SF6 circuit breakers and maintain the safe and stable operation of the power grid.
  • the ideal high-voltage electrical contact material requires breaking capacity under high current, good pressure resistance, low contact resistance, good welding resistance, wear resistance, small breaking current, high mechanical strength and good processing performance.
  • CuW80 alloy materials it is difficult for CuW80 alloy materials to meet the performance requirements of arc ablation resistance and mechanical wear under UHV and high current conditions.
  • the related art discloses that materials with high hardness, wear resistance, good thermal conductivity, high temperature resistance and corrosion resistance of various media (for example, La 2 O 3 , MoS 2 , A1 2 O 3 , CdO, etc.) Metal matrix CuW80 composite electrical contact material.
  • these reinforcing phase substances have poor electrical conductivity, which makes the electrical conductivity of the electrical contact material worse, which has a great impact on the performance of the electrical contact material.
  • a related process method adopts the method of adding graphene with a coating layer.
  • the coating process of graphene is complicated, polluted and costly.
  • the plated metal is easy to agglomerate during coating, resulting in that the metal plated on the graphene surface is adhered to the graphene in the form of particles and does not completely wrap the surface of the graphene. Therefore, even if plated graphene is added, its electrical conductivity is still poor and cannot meet the requirements of arc contact materials for high-voltage SF6 circuit breakers. Therefore, the development of an electrical contact with excellent mechanical and electrical properties is the main development direction of current electrical contact materials research.
  • the technical problem to be solved by the present disclosure is to overcome the defect that the electrical contact material in the prior art cannot take both electrical and mechanical properties into consideration, so as to provide a copper-tungsten alloy material and a preparation method and application thereof.
  • a copper-tungsten alloy material is composed of the following components in terms of mass percentage: Cu: 18.0-22.0%; graphene: 0.005-0.1%, and the total C content: ⁇ 0.15%; impurity Fe content ⁇ 0.02%; impurity The content of SiO 2 is ⁇ 0.02%; the balance is W and other unavoidable trace impurities.
  • mass percentage in terms of mass percentage, it is composed of the following components: Cu: 18.0-20.0%; graphene content: 0.01-0.1%, and the total C content ⁇ 0.15%; impurity Fe content ⁇ 0.01%; impurity SiO 2 Content ⁇ 0.01%; the balance is W and other unavoidable trace impurities.
  • the present disclosure also provides a method for preparing a copper-tungsten alloy material, comprising the following steps: mixing: weighing each raw material according to a selected ratio, and then ball-milling and mixing tungsten powder, graphene and part of the copper powder to obtain a mixed powder ; compact sintering: the mixed powder is pressed into shape, vacuum sintered, and cooled to obtain a sintered billet; and infiltration: after the surface of the sintered billet is cleaned, copper is infiltrated under vacuum conditions, and then cooled and annealed. Thereby, an arc-ablation resistant material is obtained.
  • the ball milling rate in the mixing step is 1000-1500 rpm and the time is 0.5-1.0 h.
  • the graphene is a few-layer graphene; and the illustrated few-layers are 2-10 layers.
  • the graphene is graphene oxide or reduced graphene oxide.
  • the part of the copper powder in the mixing step accounts for 3%-5% of the total mass of the raw materials, the average particle size of the copper powder is 20-100 ⁇ m, and the average particle size of the tungsten powder is 20-100 ⁇ m.
  • the pressing pressure is 550-650MPa
  • the vacuum sintering temperature is 1150-1250°C
  • the vacuum degree is 1 ⁇ 10 -2 -3 ⁇ 10 -2 Pa
  • the sintering time is 0.5-1.5h.
  • the temperature of infiltration of copper is 1200-1300°C
  • the time is 0.5-1.5h
  • the vacuum degree is 1 ⁇ 10 -1 -3 ⁇ 10 -3 Pa
  • the cooling It is carried out at a temperature of 600-800°C
  • the annealing is carried out at 600-800°C under a vacuum of 1 ⁇ 10 ⁇ 2 to 3 ⁇ 10 ⁇ 2 Pa for 0.5-1 h.
  • the present disclosure also provides the application of the copper-tungsten alloy material prepared by the above-mentioned copper-tungsten alloy material or the above-mentioned preparation method of the copper-tungsten alloy material in the arc contact material for high-voltage SF6 circuit breakers.
  • the raw materials mainly include three kinds of graphene, copper powder and tungsten powder.
  • the high electrical conductivity, thermal conductivity, specific surface area and superior lubricating properties of doped graphene can improve graphene
  • the interfacial wettability with the metal matrix (the content of graphene is too high or too low, resulting in poor interfacial wettability between graphene and the metal matrix, resulting in poor electrical conductivity and mechanical properties).
  • the preparation method of the copper-tungsten alloy material provided by the present disclosure first mixes graphene with tungsten powder and part of copper powder by ball milling, so that graphene is surrounded by tungsten powder and copper powder, and graphene, tungsten powder and part of copper powder are mixed.
  • the copper powder is mixed evenly, thereby preventing the problem of uneven mixing of materials and uneven electrical conductivity caused by the easy agglomeration and agglomeration of graphene in the ordinary mixing method.
  • the compactness of the copper-tungsten alloy material is improved by ball-milling, mixing, pressing, sintering, and vacuum infiltration of copper.
  • the method not only improves the electrical conductivity and mechanical properties of the graphene-modified copper-tungsten alloy material, so that it can well meet the application in arc contact materials for high-voltage SF6 circuit breakers; and the graphene does not need to be metal-plated, Reduced costs.
  • the preparation process of the method is simple, and the preparation process does not pollute the environment.
  • the preparation method of copper-tungsten alloy material provided by the present disclosure further promotes the mixing uniformity of graphene, tungsten powder and copper powder by limiting the speed and time of ball milling, and improves the performance of graphene-doped modified copper-tungsten alloy material. Electrical conductivity and mechanical properties.
  • the preparation method of the copper-tungsten alloy material provided by the present disclosure by using few-layer graphene (the number of layers is 2-10 layers) and/or by using graphene oxide or reduced graphene oxide, combined with compact sintering and melting.
  • the infiltration step can further improve the density of the graphene-doped modified copper-tungsten alloy material, and improve the electrical conductivity and mechanical properties of the material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650 MPa, then sintered at 1250 ° C under a vacuum of 1 ⁇ 10 -2 Pa for 1.5 hours, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 150g of copper powder in a 1 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 800°C in a furnace, then vacuum annealed at 800°C and 1 ⁇ 10 -2 Pa for 1 hour, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering the mixture is pressed into a cemented carbide mold with a pressure of 550 MPa, then sintered at 1200° C. under a vacuum of 1.5 ⁇ 10 -2 Pa for 1.0 h, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 16g of copper powder in a 2 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 750°C in a furnace, then annealed in a vacuum at 750°C and 2 ⁇ 10 -2 Pa for 0.6 h, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650MPa, then sintered at 1200°C under a vacuum of 1 ⁇ 10 -2 Pa for 1 hour, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 16.5g of copper powder in a 3 ⁇ 10 -3 Pa vacuum furnace. The temperature of infiltration of copper powder is 1250°C and the time is 0.5h.
  • Annealing the samples after vacuum infiltration of copper are cooled to 700°C in a furnace, then annealed at 700°C and 3 ⁇ 10 -2 Pa for 1 hour and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 600 MPa, then sintered at 1150 ° C under a vacuum of 3 ⁇ 10 -2 Pa for 0.5 h, and cooled to room temperature to obtain a sintered billet.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 17g of copper powder in a 1.5 ⁇ 10 -3 Pa vacuum furnace, and infiltrate the copper powder at a temperature of 1250° C. for 1 hour.
  • Annealing the sample after vacuum infiltration of copper was cooled to 700°C in a furnace, then annealed at 700°C and 1.5 ⁇ 10 -2 Pa for 1 h and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering the mixture is pressed into a cemented carbide mold with a pressure of 600 MPa, then sintered at 1150 ° C under a vacuum of 2 ⁇ 10 -2 Pa for 0.5 h, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 17g of copper powder in a 2.5 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the samples after vacuum infiltration of copper were cooled to 600°C in a furnace, then annealed in a vacuum at 600°C and 1 ⁇ 10 -2 Pa for 0.5h, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • the present embodiment provides a copper-tungsten alloy material, and its preparation method is as follows:
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650 MPa, then sintered at 1250 ° C under a vacuum of 1 ⁇ 10 -2 Pa for 1.5 hours, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 130g of copper powder in a 1 ⁇ 10 -3 Pa vacuum furnace. The temperature of the infiltrated copper powder is 1300°C and the time is 1h.
  • Annealing the sample after vacuum infiltration of copper was cooled to 800°C in a furnace, then vacuum annealed at 800°C and 1 ⁇ 10 -2 Pa for 1 hour, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650 MPa, then sintered at 1250 ° C under a vacuum of 1 ⁇ 10 -2 Pa for 1.5 hours, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 170g of copper powder in a 1 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 800°C in a furnace, then vacuum annealed at 800°C and 1 ⁇ 10 -2 Pa for 1 hour, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650 MPa, then sintered at 1250 ° C under a vacuum of 1 ⁇ 10 -2 Pa for 1.5 hours, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 150g of copper powder in a 1 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 800°C in a furnace, then vacuum annealed at 800°C and 1 ⁇ 10 -2 Pa for 1 hour, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering the mixture is pressed into a cemented carbide mold with a pressure of 550 MPa, then sintered at 1200° C. under a vacuum of 1.5 ⁇ 10 -2 Pa for 1.0 h, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 16g of copper powder in a 1 ⁇ 10 -1 Pa vacuum furnace, and infiltrate the copper powder at a temperature of 1250°C for 1h.
  • Annealing the sample after vacuum infiltration of copper was cooled to 750°C in a furnace, then annealed in a vacuum at 750°C and 2 ⁇ 10 -2 Pa for 0.6 h, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering the mixture is pressed into a cemented carbide mold with a pressure of 550 MPa, then sintered at 1200° C. under a vacuum of 1.5 ⁇ 10 -2 Pa for 1.0 h, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 16g of copper powder in a 1 ⁇ 10 -2 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 750°C in a furnace, then annealed in a vacuum at 750°C and 2 ⁇ 10 -2 Pa for 0.6 h, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This comparative example provides a copper-tungsten alloy material, the preparation method of which is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650 MPa, then sintered at 1250 ° C under a vacuum of 1 ⁇ 10 -2 Pa for 1.5 hours, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 15g of copper powder in a 1 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 800°C in a furnace, then vacuum annealed at 800°C and 1 ⁇ 10 -2 Pa for 1 hour, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This embodiment provides a copper-tungsten alloy material, and the preparation method is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650 MPa, then sintered at 1250 ° C under a vacuum of 1 ⁇ 10 -2 Pa for 1.5 hours, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 150g of copper powder in a 1 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 800°C in a furnace, then vacuum annealed at 800°C and 1 ⁇ 10 -2 Pa for 1 hour, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This comparative example provides a copper-tungsten alloy material, the preparation method of which is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650 MPa, then sintered at 1250 ° C under a vacuum of 1 ⁇ 10 -2 Pa for 1.5 hours, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 150g of copper powder in a 1 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 800°C in a furnace, then vacuum annealed at 800°C and 1 ⁇ 10 -2 Pa for 1 hour, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This comparative example provides a copper-tungsten alloy material, the preparation method of which is as follows.
  • Green compact sintering The mixture is pressed into a cemented carbide mold with a pressure of 650 MPa, then sintered at 1250 ° C under a vacuum of 1 ⁇ 10 -2 Pa for 1.5 hours, and cooled to room temperature to obtain a sintered compact.
  • Infiltration After cleaning the surface of the sintered blank, infiltrate 15g of copper powder in a 1 ⁇ 10 -3 Pa vacuum furnace.
  • Annealing the sample after vacuum infiltration of copper was cooled to 800°C in a furnace, then vacuum annealed at 800°C and 1 ⁇ 10 -2 Pa for 1 hour, and then cooled to room temperature in a furnace to obtain the copper-tungsten alloy material.
  • This comparative example provides a copper-tungsten alloy material, the preparation method of which is as follows.
  • Compact sintering vacuum-dry the mixed powder, pass through a 90-mesh sieve, and press into a steel mold with a pressing pressure of 600 MPa to obtain a compact; the compact is heated to 175°C in an argon protection furnace, and kept for 50 minutes; Subsequently, the temperature was raised to 500° C., and the temperature was kept for 35 minutes; then the temperature was raised to a sintering temperature of 1,450° C., and the temperature was kept for 2 hours, and the furnace was cooled to room temperature to obtain a sintered blank.
  • Infiltration After cleaning the surface of the sintered billet, infiltrate 9.89g of copper powder in a vacuum furnace, the infiltration temperature is 1300°C, and the holding time is 20min.
  • the copper-tungsten alloy materials obtained in each example and comparative example were processed into cylinders with a diameter of 20 mm and a height of 5 mm, and then their electrical properties and mechanical properties were tested respectively.
  • 1 point is randomly selected in the middle area of the copper-tungsten alloy material, and 2 points are randomly selected in the edge area, a total of 3 points, and then tested respectively, and the average value is taken.
  • the copper-tungsten alloy material provided by the present disclosure can improve the interface wettability between graphene and the metal matrix by doping graphene and limiting the specific graphene content, while graphene is free.
  • a continuous conductive network is constructed at the internal defects of the material, so that the copper-tungsten alloy material has a dense microstructure, which greatly reduces the influence of internal micro-defects on its electrical conductivity, and significantly improves the electrical conductivity and mechanical properties of the copper-tungsten alloy material. Material properties are uniform.

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Abstract

本申请提供了一种铜钨合金材料及其制备方法和应用，按照质量百分比计，所述铜钨合金材料由如下组分组成，Cu：18.0-22.0％；石墨烯：0.005-0.1％，且总C含量：≤0.15％；杂质Fe含量≤0.02％；杂质SiO 2含量≤0.02％；余量为W和其它不可避免的微量杂质。所述铜钨合金材料，通过添加石墨烯并限定各组分含量，尤其是石墨烯及总C含量，提高了铜钨合金材料的导电和力学性能，其中密度≥15.35g/cm 3，硬度(HB)≥232，导电率≥40.7％IACS(20℃)且抗弯强度≥1055MPa，从而能够很好地满足高压SF6断路器用弧触头材料的各项性能要求。

Description

一种铜钨合金材料及其制备方法和应用 技术领域
本公开涉及电工材料技术领域，具体涉及一种铜钨合金材料及其制备方法和应用。
背景技术
目前我国110kV及以上高压、超高压及特高压输变电系统主要使用SF6断路器，而35kV以下配电系统则以真空断路器使用居多。目前大功率SF6断路器的应用主要为CuW80合金材料。但是CuW80合金材料在满容量开断5-6次后易出现较严重的电弧烧损现象，必须对触头进行全面维护检修。因此，研究并提升高压大功率SF6断路器用电触头材料导电性等性能指标，对减少SF6断路器的故障率，维护电网的安全稳定运行具有重要意义。
理想的高压电触头材料要求具有大电流下的开断能力、耐压性能好、接触电阻小、抗熔焊性好、耐磨、截断电流小、机械强度高以及良好的加工性能。但是CuW80合金材料难以较好满足特高压大电流工况条件下耐电弧烧蚀及机械磨损的性能要求。相关技术公开了将具有高硬度、耐磨、导热性好、耐高温和耐各种介质腐蚀性能的材料(例如，La 2O 3、MoS 2、A1 2O 3、CdO等)作为增强相与金属基体CuW80进行复合的复合电接触材料。但这些增强相物质导电性都很差，使得电接触材料的导电性变差，这对电接触材料的性能有很大的影响。
为改善CuW80合金材料的导电性能，还有相关的工艺方法采用了添加具有镀层的石墨烯的方式。但是石墨烯的镀层工艺复杂、污染大、成本高。而且由于石墨烯表面复杂，镀层时被镀金属很容易团聚，导致在石墨烯表面镀的金属都是以颗粒状粘覆在石墨烯上并没有完全包裹石墨烯的表面。 因此，即使添加了镀层的石墨烯，但是其导电性能依然较差，无法满足高压SF6断路器用弧触头材料的要求。因此开发一种同时具备优良的力学和电学性能的电触头是当前电接触材料研究的主要发展方向。
发明内容
因此，本公开要解决的技术问题在于克服现有技术中的电触头材料存在电学和力学性能不能兼顾的缺陷，从而提供一种铜钨合金材料及其制备方法和应用。
为此，本公开提供如下技术方案：
一种铜钨合金材料，按照质量百分比计，由如下组分组成，Cu：18.0-22.0％；石墨烯：0.005-0.1％，且总C含量：≤0.15％；杂质Fe含量≤0.02％；杂质SiO 2含量≤0.02％；余量为W和其它不可避免的微量杂质。
根据一种实施方式，按照质量百分比计，由如下组分组成，Cu：18.0-20.0％；石墨烯含量：0.01-0.1％，且总C含量≤0.15％；杂质Fe含量≤0.01％；杂质SiO 2含量≤0.01％；余量为W和其它不可避免的微量杂质。
本公开还提供了一种铜钨合金材料的制备方法，包括如下步骤：混合：按选定的配比称取各原料，然后将钨粉、石墨烯和部分铜粉球磨混合，得混合粉体；压坯烧结：将混合粉体压制成型，真空烧结，冷却得烧结坯；和熔渗：将烧结坯进行表面清理后，在真空条件下进行熔渗铜，然后冷却并退火。由此获得抗电弧烧蚀材料。
根据一种实施方式，混合步骤中的球磨速率为1000-1500rpm，时间为0.5-1.0h。
根据一种实施方式，所述石墨烯为寡层石墨烯；且所示寡层为2-10层。
根据一种实施方式，所述石墨烯为氧化石墨烯或还原氧化石墨烯。
根据一种实施方式，所述混合步骤中的所述部分铜粉占原料总质量的3％-5％，所述铜粉的平均粒径为20-100μm，且所述钨粉的平均粒径为 20-100μm。
根据一种实施方式，所述压坯烧结步骤中，压制压强为550-650MPa，真空烧结温度为1150-1250℃，真空度为1×10 -2-3×10 -2Pa，且烧结时间为0.5-1.5h。
根据一种实施方式，所述溶渗步骤中，溶渗铜的温度为1200-1300℃，时间为0.5-1.5h，真空度为1×10 -1-3×10 -3Pa；所述冷却在600-800℃的温度下进行；所述退火在600-800℃、1×10 -2-3×10 -2Pa的真空下进行0.5-1h。
本公开还提供了上述的铜钨合金材料或上述的铜钨合金材料的制备方法制得的铜钨合金材料在高压SF6断路器用弧触头材料中的应用。
本公开技术方案，具有如下优点：
1、本公开提供的铜钨合金材料中，原料主要包括石墨烯、铜粉和钨粉三种。通过掺杂石墨烯的方式，并限定各组分含量，尤其是石墨烯及总C含量，利用掺杂石墨烯的高的导电性、导热性、比表面积以及优越的润滑特性，可改善石墨烯与金属基体的界面润湿性(石墨烯的含量过高或过低，导致石墨烯与金属基体的界面润湿性差，导致导电和力学性能均差)。同时石墨烯游离在材料内部缺陷处并构建连续导电网络，使得铜钨合金材料具有致密的微观组织，大大减少了内部微缺陷对其导电性能的影响，显著提高了铜钨合金材料的导电性能和力学性能(密度≥15.35g/cm 3，硬度(HB)≥232，导电率≥40.7％IACS(20℃)，抗弯强度≥1055MPa)，从而能够很好地满足其在高压SF6断路器用弧触头材料中的应用中的性能要求。而且，无需对石墨烯进行镀金属处理，降低了成本。
2、本公开提供的铜钨合金材料的制备方法，先将石墨烯与钨粉、部分铜粉以球磨的方式混合，使得石墨烯被钨粉、铜粉包围，且石墨烯与钨粉、部分铜粉混合均匀，从而防止了普通的混合方式中石墨烯易团聚结块导致物料混合不均匀，导电性能不均匀的问题。所述方法通过球磨混合结合压 制烧结、真空熔渗铜，提高了铜钨合金材料的致密性。所述方法不仅提高了石墨烯改性铜钨合金材料的导电率和力学性能，使其很好地满足在高压SF6断路器用弧触头材料中的应用；而且无需对石墨烯进行镀金属处理，降低了成本。所述方法的制备工艺简单，且制备过程对环境无污染。
3、本公开提供的铜钨合金材料的制备方法，通过限定球磨的速率及时间，进一步促进石墨烯与钨粉和铜粉的混合均匀性，提高了石墨烯掺杂改性铜钨合金材料的导电和力学性能。
4、本公开提供的铜钨合金材料的制备方法，通过使用寡层石墨烯(层数为2-10层)和/或通过使用氧化石墨烯或还原氧化石墨烯，并结合压坯烧结和溶渗步骤，可进一步提高石墨烯掺杂改性铜钨合金材料致密性，提高材料的导电和力学性能。
具体实施方式
提供下述实施例是为了更好地进一步理解本公开，并不局限于所述最佳实施方式，不对本公开的内容和保护范围构成限制，任何人在本公开的启示下或是将本公开与其他相关技术的特征进行组合而得出的任何与本公开相同或相近似的产品，均落在本公开的保护范围之内。
实施例中未注明具体实验步骤或条件者，按照本领域内的文献所描述的常规实验步骤的操作或条件即可进行。所用试剂或仪器未注明生产厂商者，均为可以通过市购获得的常规试剂产品。
各实施例和对比例制得的铜钨合金材料在进行元素分析时，分别在铜钨合金材料中间区域随机取1点、边缘区域随机取2点，共3个点，然后分别进行元素分析，取平均值；且在元素分析过程中只能测定铜钨合金材料中总C含量，其中的石墨烯(碳纤维)在制备过程中无损失。
实施例1
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将802.95g钨粉(平均粒径为60μm)、0.05g氧化石墨烯(寡层)、50g铜粉(平均粒径为40μm)，在3D高能球磨机中以1500rpm速率球磨混合0.5h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1250℃，1×10 -2Pa真空度下烧结1.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -3Pa真空炉中熔渗150g铜粉，熔渗铜粉的温度为1300℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至800℃，然后在800℃、1×10 -2Pa下真空退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.91％；石墨烯：0.005％，且总C含量：0.12％；W含量79.2％；杂质Fe含量0.012％；杂质SiO 2含量0.009％；其它不可避免的微量杂质。
实施例2
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将80.19g钨粉(平均粒径为20μm)、0.01g氧化石墨烯(寡层)、4g铜粉(平均粒径为60μm)在3D高能球磨机中以1500rpm速率球磨混合1h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为550MPa，然后在1200℃，1.5×10 -2Pa真空度下烧结1.0h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在2×10 -3Pa真空炉中熔渗16g铜粉，熔渗铜粉的温度为1250℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至750℃，然后在750℃、2×10 -2Pa真空退火0.6h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.42％； 石墨烯：0.01％，且总C含量：0.08％；W含量79.56％；杂质Fe含量0.011％；杂质SiO 2含量0.008％；其它不可避免的微量杂质。
实施例3
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将80.08g钨粉(平均粒径为100μm)、0.02g氧化石墨烯(寡层)、3.5g铜粉(平均粒径为80μm)在3D高能球磨机中以1000rpm速率球磨混合0.8h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1200℃，1×10 -2Pa真空度下烧结1h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在3×10 -3Pa真空炉中熔渗16.5g铜粉，熔渗铜粉的温度为1250℃，时间为0.5h。
退火：将真空熔渗铜后的样品随炉冷却至700℃，然后在700℃、3×10 -2Pa退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.93％；石墨烯：0.02％，且总C含量：0.09％；W含量79.88％；杂质Fe含量0.012％；杂质SiO 2含量0.009％；其它不可避免的微量杂质。
实施例4
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将80.05g钨粉(平均粒径为30μm)、0.05g氧化石墨烯(寡层)、3g铜粉(平均粒径为100μm)在3D高能球磨机中以1200rpm速率球磨混合1h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为600MPa，然后在1150℃，3×10 -2Pa真空度下烧结0.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1.5×10 -3Pa真空炉中熔渗17g铜粉， 熔渗铜粉的温度为1250℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至700℃，然后在700℃、1.5×10 -2Pa退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.92％；石墨烯：0.05％，且总C含量：0.10％；W含量79.88％；杂质Fe含量0.011％；杂质SiO 2含量0.01％；其它不可避免的微量杂质。
实施例5
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将79.9g钨粉(平均粒径为80μm)、0.1g氧化石墨烯(寡层)、3g铜粉(平均粒径为20μm)在3D高能球磨机中以1400rpm速率球磨混合1h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为600MPa，然后在1150℃，2×10 -2Pa真空度下烧结0.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在2.5×10 -3Pa真空炉中熔渗17g铜粉，熔渗铜粉的温度为1200℃，时间为1.5h。
退火：将真空熔渗铜后的样品随炉冷却至600℃，然后在600℃、1×10 -2Pa真空退火0.5h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.91％；石墨烯：0.1％，且总C含量：0.12％；W含量79.78％；杂质Fe含量0.012％；杂质SiO 2含量0.008％；其它不可避免的微量杂质。
实施例6
本实施例提供一种铜钨合金材料，其制备方法如下：
混合：将820.95g钨粉(平均粒径为60μm)、0.05g氧化石墨烯(寡层)、50g铜粉(平均粒径为40μm)在3D高能球磨机中以1500rpm速率球磨混 合0.5h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1250℃，1×10 -2Pa真空度下烧结1.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -3Pa真空炉中熔渗130g铜粉，熔渗铜粉的温度为1300℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至800℃，然后在800℃、1×10 -2Pa下真空退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：17.96％；石墨烯：0.005％，且总C含量：0.08％；W含量81.88％；杂质Fe含量0.011％；杂质SiO 2含量0.008％；其它不可避免的微量杂质。
实施例7
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将781.05g钨粉(平均粒径为60μm)、0.05g氧化石墨烯(寡层)、50g铜粉(平均粒径为40μm)在3D高能球磨机中以1500rpm速率球磨混合0.5h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1250℃，1×10 -2Pa真空度下烧结1.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -3Pa真空炉中熔渗170g铜粉，熔渗铜粉的温度为1300℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至800℃，然后在800℃、1×10 -2Pa下真空退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：21.93％；石墨烯：0.005％，且总C含量：0.08％；W含量77.83％；杂质Fe含量0.010％；杂质SiO 2含量0.008％；其它不可避免的微量杂质。
实施例8
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将802.95g钨粉(平均粒径为60μm)、0.05g还原氧化石墨烯(寡层)、50g铜粉(平均粒径为40μm)在3D高能球磨机中以1500rpm速率球磨混合0.5h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1250℃，1×10 -2Pa真空度下烧结1.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -3Pa真空炉中熔渗150g铜粉，熔渗铜粉的温度为1300℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至800℃，然后在800℃、1×10 -2Pa下真空退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.90％；石墨烯：0.005％，且总C含量：0.091％；W含量79.85％；杂质Fe含量0.01％；杂质SiO 2含量0.008％；其它不可避免的微量杂质。
实施例9
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将80.19g钨粉(平均粒径为20μm)、0.01g氧化石墨烯(寡层)、4g铜粉(平均粒径为60μm)在3D高能球磨机中以1500rpm速率球磨混合1h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为550MPa，然后在1200℃，1.5×10 -2Pa真空度下烧结1.0h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -1Pa真空炉中熔渗16g铜粉，熔渗铜粉的温度为1250℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至750℃，然后在750℃、2×10 -2Pa真空退火0.6h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.92％；石墨烯：0.01％，且总C含量：0.1％；W含量79.82％；杂质Fe含量0.011％；杂质SiO 2含量0.009％；其它不可避免的微量杂质。
实施例10
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将80.19g钨粉(平均粒径为20μm)、0.01g氧化石墨烯(寡层)、4g铜粉(平均粒径为60μm)在3D高能球磨机中以1500rpm速率球磨混合1h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为550MPa，然后在1200℃，1.5×10 -2Pa真空度下烧结1.0h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -2Pa真空炉中熔渗16g铜粉，熔渗铜粉的温度为1250℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至750℃，然后在750℃、2×10 -2Pa真空退火0.6h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.94％；石墨烯：0.01％，且总C含量：0.095％；W含量79.79％；杂质Fe含量0.012％；杂质SiO 2含量0.009％；其它不可避免的微量杂质。
对比例1
本对比例提供一种铜钨合金材料，其制备方法如下。
混合：将80.30g钨粉(平均粒径为60μm)、5g铜粉(平均粒径为40μm)在2000rpm速率下球磨混合0.5h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1250℃，1×10 -2Pa真空度下烧结1.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -3Pa真空炉中熔渗15g铜粉， 熔渗铜粉的温度为1300℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至800℃，然后在800℃、1×10 -2Pa下真空退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.98％；且总C含量：0.09％；W含量79.88％；杂质Fe含量0.011％；杂质SiO 2含量0.008％；其它不可避免的微量杂质。
对比例2
本实施例提供一种铜钨合金材料，其制备方法如下。
混合：将802.95g钨粉(平均粒径为60μm)、0.05g碳纤维、50g铜粉(平均粒径为40μm)在3D高能球磨机中以1500rpm速率球磨混合0.5h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1250℃，1×10 -2Pa真空度下烧结1.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -3Pa真空炉中熔渗150g铜粉，熔渗铜粉的温度为1300℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至800℃，然后在800℃、1×10 -2Pa下真空退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.90％；碳纤维：0.005％，且总C含量：0.091％；W含量79.83％；杂质Fe含量0.012％；杂质SiO 2含量0.009％；其它不可避免的微量杂质。
对比例3
本对比例提供一种铜钨合金材料，其制备方法如下。
混合：将802.95g钨粉(平均粒径为60μm)、0.05g氧化石墨烯(寡层)、50g铜粉(平均粒径为40μm)在3000rpm速率下搅拌混合3h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1250℃，1×10 -2Pa真空度下烧结1.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -3Pa真空炉中熔渗150g铜粉，熔渗铜粉的温度为1300℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至800℃，然后在800℃、1×10 -2Pa下真空退火1h后随炉冷却至室温，即得所述铜钨合金材料。
上述铜钨合金材料中随机选取的3个点分别进行元素分析的数据相差较大，说明物料混合不均匀。
对比例4
本对比例提供一种铜钨合金材料，其制备方法如下。
混合：将80.295g钨粉(平均粒径为60μm)、0.2g氧化石墨烯(寡层)、5g铜粉(平均粒径为40μm)，在3D高能球磨机中以1500rpm速率球磨混合0.5h，得混合物。
压坯烧结：将混合物在硬质合金模具中压制成型，压力为650MPa，然后在1250℃，1×10 -2Pa真空度下烧结1.5h，冷却至室温得烧结坯。
熔渗：将烧结坯进行表面清理后，在1×10 -3Pa真空炉中熔渗15g铜粉，熔渗铜粉的温度为1300℃，时间为1h。
退火：将真空熔渗铜后的样品随炉冷却至800℃，然后在800℃、1×10 -2Pa下真空退火1h后随炉冷却至室温，即得所述铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.05％；石墨烯：0.199％，且总C含量：0.25％；W含量79.88％；杂质Fe含量0.012％；杂质SiO 2含量0.010％；余量为其它不可避免的微量杂质。
对比例5
本对比例提供一种铜钨合金材料，其制备方法如下。
混合：称取还原氧化石墨烯0.045g加入0.3ml的乙醇中得15mg/ml的石墨烯乙醇悬浮液，然后与0.3ml的0.5M聚乙烯醇缩丁醛乙醇溶液混合，在8000rpm搅拌条件下逐步加入80g钨粉、0.008g镧、0.15g锆和9.89g铜粉，得混合粉体。
压坯烧结：将混合粉体真空干燥，过90目筛，在钢质模具中压制成型，压制压强为600MPa，得压坯；将压坯在氩气保护炉中升温至175℃，保温50min；随后升温至500℃，保温35min；之后升温至烧结温度1450℃，保温2h后炉冷至室温，得烧结坯。
熔渗：将烧结坯进行表面清理后，在真空炉中进行熔渗9.89g铜粉，熔渗温度为1300℃，保温时间为20min。
退火：将真空熔渗铜粉后的样品随炉冷却至900℃，然后在900℃、1×10 -2Pa真空退火2h，即得铜钨合金材料。
经元素分析，按照质量百分比计，上述铜钨合金材料中Cu：19.75％；石墨烯：0.045％，且总C含量：0.12％；W含量78.60％，镧含量0.008％；锆含量0.15％；杂质Fe含量0.013％；杂质SiO 2含量0.01％；余量为其它不可避免的微量杂质。
实验例
将各实施例和对比例制得的铜钨合金材料分别加工成直径为20mm，高5mm的圆柱体，然后分别测试其电学性能和力学性能，检测方法按照GB/T5586-2016标准，电学性能和力学性能测试时分别在铜钨合金材料中间区域随机取1点、边缘区域随机取2点，共3个点，然后分别进行测试，取平均值。
测试结果如下表1所示。
表1性能测试结果
Figure PCTCN2021121307-appb-000001
注：由于对比例3中随机选取的3个点的测试结果相差较大，因此不进行平均值的计算。
由上表中的数据可知，本公开提供的铜钨合金材料，通过掺杂石墨烯的方式，并限定特定的石墨烯含量，可改善石墨烯与金属基体的界面润湿性，同时石墨烯游离在材料内部缺陷处并构建连续导电网络，使得铜钨合金材料具有致密的微观组织，大大减少了内部微缺陷对其导电性能的影响，显著提高了铜钨合金材料的导电性能和力学性能，而且材料性能均匀。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本公开创造的保护范围之中。

Claims (10)

  1. 一种铜钨合金材料，按照质量百分比计，由如下组分组成，Cu：18.0-22.0％；石墨烯：0.005-0.1％，且总C含量：≤0.15％；杂质Fe含量≤0.02％；杂质SiO 2含量≤0.02％；和余量为W和其它不可避免的微量杂质。
  2. 根据权利要求1所述的铜钨合金材料，其中，按照质量百分比计，由如下组分组成，Cu：18.0-20.0％；石墨烯含量：0.01-0.1％，且总C含量≤0.15％；杂质Fe含量≤0.01％；杂质SiO 2含量≤0.01％；和余量为W和其它不可避免的微量杂质。
  3. 一种铜钨合金材料的制备方法，包括如下步骤：
    混合：按选定的配比称取各原料，然后将钨粉、石墨烯和部分铜粉球磨混合，得混合粉体；
    压坯烧结：将混合粉体压制成型，真空烧结，冷却得烧结坯；和
    熔渗：将烧结坯进行表面清理后，在真空条件下进行熔渗铜，然后冷却并退火。
  4. 根据权利要求3所述的铜钨合金材料的制备方法，其中，混合步骤中的球磨速率为1000-1500rpm，且时间为0.5-1.0h。
  5. 根据权利要求3或4所述的铜钨合金材料的制备方法，其中，所述石墨烯为寡层石墨烯。
  6. 根据权利要求3-5任一项所述的铜钨合金材料的制备方法，其中，所述石墨烯为氧化石墨烯或还原氧化石墨烯。
  7. 根据权利要求3-6任一项所述的铜钨合金材料的制备方法，其中，所述混合步骤中的所述部分铜粉占原料总质量的3％-5％，所述铜粉的平均粒径为20-100μm，且所述钨粉的平均粒径为20-100μm。
  8. 根据权利要求3-7任一项所述的铜钨合金材料的制备方法，其中，所述压坯烧结步骤中，压制压强为550-650MPa，真空烧结温度为 1150-1250℃，真空度为1×10 -2-3×10 -2Pa，且烧结时间为0.5-1.5h。
  9. 根据权利要求3-8任一项所述的铜钨合金材料的制备方法，其中，所述溶渗步骤中，溶渗铜的温度为1200-1300℃，时间为0.5-1.5h，真空度为1×10 -1-3×10 -3Pa；所述冷却在600-800℃的温度下进行；且所述退火在600-800℃、1×10 -2-3×10 -2Pa的真空下进行0.5-1h。
  10. 权利要求1或2所述的铜钨合金材料或权利要求3-9任一项所述的铜钨合金材料的制备方法制得的铜钨合金材料在高压SF6断路器用弧触头材料中的应用。
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