AU2021354815A1 - Copper-tungsten alloy material, preparation method therefor, and application thereof - Google Patents
Copper-tungsten alloy material, preparation method therefor, and application thereof Download PDFInfo
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- 239000000956 alloy Substances 0.000 title claims abstract description 106
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910001080 W alloy Inorganic materials 0.000 title claims abstract description 101
- 238000002360 preparation method Methods 0.000 title abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 74
- 239000012535 impurity Substances 0.000 claims abstract description 56
- 239000010949 copper Substances 0.000 claims description 93
- 239000000843 powder Substances 0.000 claims description 80
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 76
- 229910052802 copper Inorganic materials 0.000 claims description 75
- 239000000203 mixture Substances 0.000 claims description 58
- 238000001816 cooling Methods 0.000 claims description 50
- 238000005245 sintering Methods 0.000 claims description 43
- 238000002156 mixing Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 37
- 238000000137 annealing Methods 0.000 claims description 34
- 239000002245 particle Substances 0.000 claims description 32
- 238000003825 pressing Methods 0.000 claims description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 24
- 239000010937 tungsten Substances 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 238000000498 ball milling Methods 0.000 claims description 20
- 230000008595 infiltration Effects 0.000 claims description 20
- 238000001764 infiltration Methods 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000011812 mixed powder Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 230000002829 reductive effect Effects 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 16
- 238000000921 elemental analysis Methods 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0475—Impregnated alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Powder Metallurgy (AREA)
- Chemically Coating (AREA)
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Abstract
The present application provides a copper-tungsten alloy material, a preparation method therefor, and an application thereof. The copper-tungsten alloy material consists of the following components in mass percent: Cu: 18.0-22.0%; graphene: 0.005-0.1%, the total C content being less than or equal to 0.15%; impurity Fe: the content being less than or equal to 0.02%; impurity SiO
Description
[0001] The application relates to the technical field of electrical materials, and in particular to a copper-tungsten alloy material, a method for preparing a copper-tungsten alloy material, and an application of a copper-tungsten alloy material.
[0002] At present, in China, a SF6 circuit breaker is mainly used in high voltage, ultra high voltage and extra-high voltage power transmission and transformation systems of 110kV or more, while a vacuum circuit breaker is mainly used in power distribution systems below 35kV. At present, copper-tungsten 80 (CuW80) alloy material is mainly applied in a high power SF6 circuit breaker. However, CuW80 alloy material is prone to generate a phenomenon of serious arc burning loss after switching for 5 to 6 times at a full capacity, and it is necessary to fully maintain and overhaul contacts. Therefore, it is of great significance to study and improve conductivity and other performance indexes of an electrical contact material for a high voltage and high power SF6 circuit breaker so as to reduce failure rate of the SF6 circuit breaker and maintain safe and stable operation of a power grid.
[0003] An ideal material for a high voltage electrical contact is required to have an ability of switching under a high current, good voltage resistance, small contact resistance, good fusion-welding resistance, wear resistance, small cut-off current, high mechanical strength and good machinability. However, CuW80 alloy material is difficult to well meet performance requirements of arc ablation resistance and mechanical wear resistance under ultra-high voltage and high current conditions. The related art discloses a composite electrical contact material obtained by using a material having properties of high hardness, wear resistance, good thermal conductivity, high temperature resistance and corrosion resistance of various media (e.g., La203, MoS2, A1 2 03 , CdO, or the like) as a reinforcing phase to recombine with a metal matrix of CuW80. However, materials of these reinforcing phases have very poor conductivity, which makes conductivity of the electrical contact material worse, and has a great impact on performance of the electrical contact material.
[0004] In order to improve conductivity of CuW80 alloy material, there are also related process methods to add graphene with plating. However, plating process of graphene is complex, has serious pollution and high cost. Furthermore, due to a complex surface of graphene, a metal plated on the surface of graphene is easy to agglomerate during plating, which leads to the metal plated on the surface of graphene being adhered to graphene in granules rather than completely wrapping the surface of graphene. Therefore, even though graphene with plating is added, the alloy material still has poor conductivity, which cannot meet requirements of an arc contact material for a high voltage SF6 circuit breaker. Therefore, developing a kind of electrical contact with excellent mechanical and electrical performance simultaneously is a main development direction of current research on electrical contact materials.
[0005] Therefore, the technical problem to be solved by the application is to overcome a defect in the related art, that is, electrical and mechanical performance of the electrical contact material cannot be taken into account simultaneously, thereby providing a copper tungsten alloy material, a method for preparing a copper-tungsten alloy material, and an application of a copper-tungsten alloy material.
[0006] To this end, the application provides the following technical solutions.
[0007] A copper-tungsten alloy material, is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 18.0% to 22.0%; graphene, occupying 0.005% to 0.1%, and a total C content < 0.15%; an impurity Fe, with
a content < 0.02%; an impurity Si02 , with a content < 0.02%; and W and other inevitable
trace impurities, constituting a remainder of the copper-tungsten alloy material.
[0008] According to an implementation, the copper-tungsten alloy material is composed of following components in their respective percentages with respect to the mass of the material: Cu, occupying 18.0% to 22 .0%; graphene, with a content occupying 0.01% to 0.1%, and the total C content < 0.15%; the impurity Fe, with a content < 0.01%; the
impurity Si 2 , with a content < 0.01%; and W and other inevitable trace impurities,
constituting the remainder of the copper-tungsten alloy material.
[0009] The application also provides a method for preparing a copper-tungsten alloy material, including operations of mixing, blank pressing and sintering, and infiltrating. In operation of mixing, raw materials are weighed according to their respective selected composition ratios, and then tungsten powders, graphene and part of copper powders are mixed by ball-milling, to obtain a mixed powder. In operation of blank pressing and sintering, press-forming and vacuum sintering are performed to the mixed powder, and then cooling is performed, to obtain a sintered blank. In operation of infiltrating, after cleaning a surface of the sintered blank, copper infiltration is performed under a vacuum condition, and then cooling and annealing are performed. Therefore, an arc ablation resistant material is obtained.
[0010] According to an implementation, the ball-milling in the operation of mixing may have a speed of 1000 to 1500 rpm and a duration of 0.5 to 1.0h.
[0011] According to an implementation, the graphene may be an oligolayered graphene, the oligolayer includes 2 to 10 layers.
[0012] According to an implementation, the graphene may be an oxidized graphene oxide or a reductive oxidized graphene.
[0013] According to an implementation, the part of copper powders in the operation of mixing may occupy 3% to 5% of a total mass of the raw materials, an average particle diameter of the copper powders is 20 to 100 um, and an average particle diameter of the tungsten powders is 20 to 100 um.
[0014] According to an implementation, in the operation of blank pressing and sintering, a pressure of the pressing may be 550 to 650 MPa, the vacuum sintering is performed at a temperature of 1150 to 1250°C, a vacuum degree of 1x10-2 to 3x10-2 Pa and a sintering duration of 0.5 to 1.5h.
[0015] According to an implementation, in the operation of infiltrating, the copper infiltration may be performed at a temperature of 1200 to 1300°C, a duration of 0.5 to 1.5h and a vacuum degree of 1x10-1 to 3x10-3 Pa; the cooling is performed at a temperature of 600 to 800°C; and the annealing is performed for 0.5 to lh at a temperature of 600 to 800°C and a vacuum of 1x10-2 to 3x10-2 Pa.
[0016] The application also provides an application of the above copper-tungsten alloy material or a copper-tungsten alloy material prepared by the above method for preparing a copper-tungsten alloy material, applied in an arc contact material for a high voltage SF6 circuit breaker.
[0017] The technical solutions of the application have the following advantages:
[0018] 1. In the copper-tungsten alloy material provided in the application, the raw materials mainly include graphene, copper powders and tungsten powders. By doping graphene and defining contents of various components, especially the graphene content and the total C content, wettability of an interface between the graphene and a metal matrix may be improved by using high electrical conductivity, thermal conductivity, specific surface area and superior lubrication characteristics of the doped graphene (too high or too low graphene content leads to poor wettability of the interface between the graphene and the metal matrix, thereby resulting in poor conductivity and mechanical performance). Furthermore, graphene dissociates at internal defects of the material and constructs a continuous conductive network, so that the copper-tungsten alloy material has a dense microstructure, thereby greatly reducing influence of internal micro-defects on conductivity of the copper-tungsten alloy material, and significantly improving conductivity and mechanical performance of the copper-tungsten alloy material (density > 15.35 g/cm3
, hardness (HB) > 232, conductivity > 40.7% IACS ( 20°C), bending strength > 1055 MPa), to well meet performance requirements of its application in an arc contact material for a high voltage SF6 circuit breaker. Furthermore, there is no need for metal plating on graphene, thereby reducing cost.
[0019] 2. According to the method for preparing a copper-tungsten alloy material provided in the application, graphene is firstly mixed with tungsten powders and part of copper powders by ball-milling, such that graphene is surrounded by tungsten powders and copper powders, and graphene is uniformly mixed with tungsten powders and part of copper powders, thereby preventing problems of uneven material mixing and uneven conductivity caused by easy agglomeration of graphene in conventional mixing methods. The method improves compactness of the copper-tungsten alloy material by ball-milling mixing in combination with pressing and sintering as well as vacuum copper infiltration. The method not only improves conductivity and mechanical performance of the graphene-modified copper-tungsten alloy material so that the graphene-modified copper-tungsten alloy material well meets its application in the arc contact material for the high voltage SF6 circuit breaker. Furthermore, there is no need for metal plating on graphene, thereby reducing cost. Preparation process of the method is simple and has no pollution to the environment.
[0020] 3. According to the method for preparing a copper-tungsten alloy material provided in the application, mixing uniformity of graphene, tungsten powders and copper powders is further promoted by defining the speed and duration of ball-milling, thereby improving conductivity and mechanical performance of the graphene-doped and modified copper-tungsten alloy material.
[0021] 4. According to the method for preparing a copper-tungsten alloy material provided in the application, compactness of the graphene-doped and modified copper- tungsten alloy material may be further improved by using the oligolayered graphene (the number of layers is 2 to 10) and/or using the oxidized graphene oxide or the reductive oxidized graphene in combination with the operations of blank pressing and sintering as well as infiltrating, thereby improving conductivity and mechanical performance of the material.
[0022] The following embodiments are provided to better understand the application, and are not limited to best embodiments as described and do not limit contents and scope of protection of the application. Any product which is the same as or similar to the application obtained by any person under an inspiration of the application or by combining features of the application with other related arts, falls within the scope of protection of the application.
[0023] When specific experimental operations or conditions are not specified in the embodiments, the operations or conditions may be carried out according to conventional experimental operations described in literatures in the art. When manufacturers of reagents or instruments used are not indicated, the reagents or instruments used are conventional reagent products which may be obtained through commercial purchase.
[0024] When elemental analysis is performed to copper-tungsten alloy materials prepared in various embodiments and comparative examples, one point is randomly selected in a middle area of the copper-tungsten alloy material, and two points are randomly selected in an edge area of the copper-tungsten alloy material, to select 3 points in total, and then element analysis is performed to the 3 points respectively, to take an average value therefrom; and during the elemental analysis, only the total C content in the copper-tungsten alloy material may be measured, and there is no loss of graphene (carbon fibers) in the preparation process.
[0025] First embodiment
[0026] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0027] Mixing: mixing 802.95g tungsten powders (an average particle diameter thereof is 60 m), 0.05g oxidized graphene (oligolayered) and 50g copper powders (an average particle diameter thereof is 40 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 0.5h, to obtain a mixture.
[0028] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1250°C and a vacuum degree of 1x10-2 Pa for 1.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0029] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 150g copper powders in a vacuum furnace at 1x10-3 Pa, here the copper powders are infiltrated at a temperature of 1300°C and a duration of 1h.
[0030] Annealing: cooling the sample subject to vacuum copper infiltration to 800°C along with the furnace, and then performing vacuum annealing on the sample at 800°C and 1x10-2 Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0031] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.91%; graphene, occupying 0.005%, and a total C content occupying 0.12%; W, with a content occupying 79.2%; an impurity Fe, with a content occupying 0.012%; an impurity SiO 2 , with a content occupying 0.009%; and other inevitable trace impurities.
[0032] Second embodiment
[0033] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0034] Mixing: mixing 80.19g tungsten powders (an average particle diameter thereof is 20 m), 0.01g oxidized graphene (oligolayered) and 4g copper powders (an average particle diameter thereof is 60 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 1h, to obtain a mixture.
[0035] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 550 MPa, and then sintering the mixture at 1200°C and a vacuum degree of 1.5x10-2 Pa for 1h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0036] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 16g copper powders in a vacuum furnace at 2x10-3 Pa, here the copper powders are infiltrated at a temperature of 1250°C and a duration of 1h.
[0037] Annealing: cooling the sample subject to vacuum copper infiltration to 750°C along with the furnace, and then performing vacuum annealing on the sample at 750°C and 2x10-2 Pa for 0.6h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0038] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.42%; graphene, occupying 0.01%, and a total C content occupying 0.08%; W, with a content occupying 7 9 . 5 6 %; an impurity Fe, with a content occupying 0.011%; an impurity SiO 2 , with a content occupying 0.008%; and other inevitable trace impurities.
[0039] Third embodiment
[0040] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0041] Mixing: mixing 80.08g tungsten powders (an average particle diameter thereof is 100 m), 0.02g oxidized graphene (oligolayered) and 3.5g copper powders (an average particle diameter thereof is 80 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1000 rpm for 0.8h, to obtain a mixture.
[0042] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1200°C and a vacuum degree of 1x10-2 Pa for 1h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0043] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 16.5g copper powders in a vacuum furnace at 3x10-3 Pa, here the copper powders are infiltrated at a temperature of 1250°C and a duration of 0.5h.
[0044] Annealing: cooling the sample subject to vacuum copper infiltration to 700°C along with the furnace, and then performing annealing on the sample at 700°C and 3x10-2Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0045] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 1 9 .9 3 %; graphene, occupying 0.02%, and a total C content occupying 0.09%; W, with a content occupying 7 9 . 8 8 %; an impurity Fe, with a content occupying 0.012%; an impurity SiO2 , with a content occupying 0.009%; and other inevitable trace impurities.
[0046] Fourth embodiment
[0047] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0048] Mixing: mixing 80.05g tungsten powders (an average particle diameter thereof is 30 m), 0.05g oxidized graphene (oligolayered) and 3g copper powders (an average particle diameter thereof is 100 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1200 rpm for 1h, to obtain a mixture.
[0049] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 600 MPa, and then sintering the mixture at 1150°C and a vacuum degree of 3x10-2 Pa for 0.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0050] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 17g copper powders in a vacuum furnace at 0.5x10-3 Pa, here the copper powders are infiltrated at a temperature of 1250°C and a duration of 1h.
[0051] Annealing: cooling the sample subject to vacuum copper infiltration to 700°C along with the furnace, and then performing annealing on the sample at 700°C and 1.5x10-2 Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0052] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.92%; graphene, occupying 0.05%, and a total C content occupying 0.10%; W, with a content occupying 79.88%; an impurity Fe, with a content occupying 0.011%; an impurity SiO2 , with a content occupying 0.01%; and other inevitable trace impurities.
[0053] Fifth embodiment
[0054] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0055] Mixing: mixing 79.9g tungsten powders (an average particle diameter thereof is 80 m), 0.lg oxidized graphene (oligolayered) and 3g copper powders (an average particle diameter thereof is 20 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1400 rpm for 1h, to obtain a mixture.
[0056] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 600 MPa, and then sintering the mixture at 1150°C and a vacuum degree of 2x10-2 Pa for 0.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0057] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 17g copper powders in a vacuum furnace at 2.5x10-3 Pa, here the copper powders are infiltrated at a temperature of 1200°C and a duration of 1.5h.
[0058] Annealing: cooling the sample subject to vacuum copper infiltration to 600°C along with the furnace, and then performing vacuum annealing on the sample at 600°C and 1x10-2 Pa for 0.5h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0059] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.91%; graphene, occupying 0.1%, and a total C content occupying 0. 12 %; W, with a content occupying 79.78%; an impurity Fe, with a content occupying 0.012%; an impurity SiO 2 , with a content occupying 0.008%; and other inevitable trace impurities.
[0060] Sixth embodiment
[0061] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0062] Mixing: mixing 820.95g tungsten powders (an average particle diameter thereof is 60 m), 0.05g oxidized graphene (oligolayered) and 50g copper powders (an average particle diameter thereof is 40 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 0.5h, to obtain a mixture.
[0063] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1250°C and a vacuum degree of 1x10-2 Pa for 1.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0064] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 130g copper powders in a vacuum furnace at 1x10-3 Pa, here the copper powders are infiltrated at a temperature of 1300°C and a duration of 1h.
[0065] Annealing: cooling the sample subject to vacuum copper infiltration to 800°C along with the furnace, and then performing vacuum annealing on the sample at 800°C and 1x10-2 Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0066] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 1 7 .9 6 %; graphene, occupying 0.005%, and a total C content occupying 0.08%; W, with a content occupying 81. 8 8 %; an impurity Fe, with a content occupying 0.011%; an impurity SiO 2 , with a content occupying 0.008%; and other inevitable trace impurities.
[0067] Seventh embodiment
[0068] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0069] Mixing: mixing 781.05g tungsten powders (an average particle diameter thereof is 60 m), 0.05g oxidized graphene (oligolayered) and 50g copper powders (an average particle diameter thereof is 40 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 0.5h, to obtain a mixture.
[0070] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1250°C and a vacuum degree of 1x10-2 Pa for 1.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0071] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 170g copper powders in a vacuum furnace at 1x10-3 Pa, here the copper powders are infiltrated at a temperature of 1300°C and a duration of 1h.
[0072] Annealing: cooling the sample subject to vacuum copper infiltration to 800°C along with the furnace, and then performing vacuum annealing on the sample at 800°C and 1x10-2 Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0073] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 21.93%; graphene, occupying 0.005%, and a total C content occupying 0.08%; W, with a content occupying 77.83%; an impurity Fe, with a content occupying 0.010%; an impurity SiO 2 , with a content occupying 0.008%; and other inevitable trace impurities.
[0074] Eighth embodiment
[0075] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0076] Mixing: mixing 802.95g tungsten powders (an average particle diameter thereof is 60 m), 0.05g reductive oxidized graphene (oligolayered) and 50g copper powders (an average particle diameter thereof is 40 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 0.5h, to obtain a mixture.
[0077] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1250°C and a vacuum degree of 1x10-2 Pa for 1.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0078] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 150g copper powders in a vacuum furnace at 1x10-3 Pa, here the copper powders are infiltrated at a temperature of 1300°C and a duration of 1h.
[0079] Annealing: cooling the sample subject to vacuum copper infiltration to 800°C along with the furnace, and then performing vacuum annealing on the sample at 800°C and 1x10-2 Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0080] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.90%; graphene, occupying 0.005%, and a total C content occupying 0.091%; W, with a content occupying 79.85%; an impurity Fe, with a content occupying 0.01%; an impurity SiO 2 , with a content occupying 0.008%; and other inevitable trace impurities.
[0081] Ninth embodiment
[0082] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0083] Mixing: mixing 80.19g tungsten powders (an average particle diameter thereof is 20 m), 0.01g oxidized graphene (oligolayered) and 4g copper powders (an average particle diameter thereof is 60 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 1h, to obtain a mixture.
[0084] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 550 MPa, and then sintering the mixture at 1200°C and a vacuum degree of 1.5x10-2 Pa for 1.0h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0085] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 16g copper powders in a vacuum furnace at 1x10-1 Pa, here the copper powders are infiltrated at a temperature of 1250°C and a duration of 1h.
[0086] Annealing: cooling the sample subject to vacuum copper infiltration to 750°C along with the furnace, and then performing vacuum annealing on the sample at 750°C and 2x10-2 Pa for 0.6h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0087] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 1 9 .9 2 %; graphene, occupying 0.01%, and a total C content occupying 0.1%; W, with a content occupying 7 9 .82 %; an impurity Fe, with a content occupying 0.011%; an impurity SiO2, with a content occupying 0.009%; and other inevitable trace impurities.
[0088] Tenth embodiment
[0089] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0090] Mixing: mixing 80.19g tungsten powders (an average particle diameter thereof is 20 m), 0.01g oxidized graphene (oligolayered) and 4g copper powders (an average particle diameter thereof is 60 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 1h, to obtain a mixture.
[0091] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 550 MPa, and then sintering the mixture at 1200°C and a vacuum degree of 1.5x10-2 Pa for 1.0h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0092] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 16g copper powders in a vacuum furnace at 1x10-2 Pa, here the copper powders are infiltrated at a temperature of 1250°C and a duration of 1h.
[0093] Annealing: cooling the sample subject to vacuum copper infiltration to 750°C along with the furnace, and then performing vacuum annealing on the sample at 750°C and 2x10-2 Pa for 0.6h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0094] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.94%; graphene, occupying 0.01%, and a total C content occupying 0.095%; W, with a content occupying 7 9 . 7 9 %; an impurity Fe, with a content occupying 0.012%; an impurity SiO 2 , with a content occupying 0.009%; and other inevitable trace impurities.
[0095] First comparative example
[0096] The comparative example provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0097] Mixing: mixing 80.30g tungsten powders (an average particle diameter thereof is 60 m) and 5g copper powders (an average particle diameter thereof is 40 m) by ball milling them at a speed of 2000 rpm for 0.5h, to obtain a mixture.
[0098] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1250°C and a vacuum degree of 1x10-2 Pa for 1.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0099] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 15g copper powders in a vacuum furnace at 1x10-3 Pa, here the copper powders are infiltrated at a temperature of 1300°C and a duration of 1h.
[0100] Annealing: cooling the sample subject to vacuum copper infiltration to 800°C along with the furnace, and then performing vacuum annealing on the sample at 800°C and 1x10-2 Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0101] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.98%; a total C content, occupying 0.09%; W, with a content occupying 79.88%; an impurity Fe, with a content occupying 0.011%; an impurity SiO 2 , with a content occupying 0.008%; and other inevitable trace impurities.
[0102] Second comparative example
[0103] The embodiment provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0104] Mixing: mixing 802.95g tungsten powders (an average particle diameter thereof is 60 m), 0.05g carbon fibers and 50g copper powders (an average particle diameter thereof is 40 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 0.5h, to obtain a mixture.
[0105] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1250°C and a vacuum degree of 1x10-2 Pa for 1.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0106] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 150g copper powders in a vacuum furnace at 1x10-3 Pa, here the copper powders are infiltrated at a temperature of 1300°C and a duration of 1h.
[0107] Annealing: cooling the sample subject to vacuum copper infiltration to 800°C along with the furnace, and then performing vacuum annealing on the sample at 800°C and 1x10-2 Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0108] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 1 9 .9 0%; carbon fibers, occupying 0.005%, and a total C content occupying
0.091%; W, with a content occupying 79.83%; an impurity Fe, with a content occupying 0.012%; an impurity SiO 2 , with a content occupying 0.009%; and other inevitable trace impurities.
[0109] Third comparative example
[0110] The comparative example provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0111] Mixing: mixing 802.95g tungsten powders (an average particle diameter thereof is 60 m), 0.05g oxidized graphene (oligolayered) and 50g copper powders (an average particle diameter thereof is 40 m) by stirring them at a speed of 3000 rpm for 3h, to obtain a mixture.
[0112] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1250°C and a vacuum degree of 1x10-2 Pa for 1.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0113] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 150g copper powders in a vacuum furnace at 1x10-3 Pa, here the copper powders are infiltrated at a temperature of 1300°C and a duration of lh.
[0114] Annealing: cooling the sample subject to vacuum copper infiltration to 800°C along with the furnace, and then performing vacuum annealing on the sample at 800°C and 1x10-2 Pa for h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0115] Data obtained by performing element analysis of 3 points randomly selected in the above copper-tungsten alloy material respectively are quite different, which shows that the materials are not uniformly mixed.
[0116] Fourth comparative example
[0117] The comparative example provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0118] Mixing: mixing 80.295g tungsten powders (an average particle diameter thereof is 60 m), 0.2g oxidized graphene (oligolayered) and 5g copper powders (an average particle diameter thereof is 40 m) by ball-milling them in a 3D high-energy ball mill at a speed of 1500 rpm for 0.5h, to obtain a mixture.
[0119] Blank pressing and sintering: performing press-forming to the mixture in a cemented carbide mold at a pressure of 650 MPa, and then sintering the mixture at 1250°C and a vacuum degree of 1x10-2 Pa for 1.5h, and then cooling the mixture to room temperature, to obtain a sintered blank.
[0120] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 15g copper powders in a vacuum furnace at 1x10-3 Pa, here the copper powders are infiltrated at a temperature of 1300°C and a duration of 1h.
[0121] Annealing: cooling the sample subject to vacuum copper infiltration to 800°C along with the furnace, and then performing vacuum annealing on the sample at 800°C and 1x10-2 Pa for 1h, and then cooling the sample to room temperature along with the furnace, to obtain the copper-tungsten alloy material.
[0122] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.05%; graphene, occupying 0.199%, and a total C content occupying 0.25%; W, with a content occupying 79.88%; an impurity Fe, with a content occupying 0.012%; an impurity SiO2 , with a content occupying 0.010%; and other inevitable trace impurities.
[0123] Fifth comparative example
[0124] The comparative example provides a copper-tungsten alloy material, a method for preparing the same is as follows.
[0125] Mixing: weighing 0.045g reductive oxidized graphene, adding it into 0.3ml ethanol to obtain a graphene ethanol suspension of 15mg/ml, then mixing the suspension with 0.3ml polyvinyl butyral ethanol solution of 0.5M, and gradually adding 80g tungsten powders, 0.008g lanthanum, 0.15g zirconium and 9.89g copper powders under a stirring condition at 8000 rpm, to obtain a mixed powder.
[0126] Blank pressing and sintering: vacuum drying the mixed powder and making the mixed powder pass through a 90-mesh sieve, and preforming press-forming to the mixed powder in a steel mold at a pressure of 600 MPa, to obtain a pressed blank; heating up the pressed blank to 175°C in an argon protective furnace, and keeping the temperature for 50min; then heating up the pressed blank to 500°C, and keeping the temperature for 35min; and then heating up the pressed blank to a sintering temperature of 1450°C, keeping the temperature for 2h, and then cooling the pressed blank to room temperature, to obtain a sintered blank.
[0127] Infiltrating: after cleaning a surface of the sintered blank, infiltrating 9.89g copper powders in a vacuum furnace, here the copper powders are infiltrated at a temperature of 1300°C and a duration of keeping the temperature is 200min.
[0128] Annealing: cooling the sample subject to vacuum copper powder infiltration to
900°C along with the furnace, and then performing vacuum annealing on the sample at 900°C and 1x10-2 Pa for 2h, to obtain the copper-tungsten alloy material.
[0129] By elemental analysis, the above copper-tungsten alloy material is composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 19.75%; graphene, occupying 0.045%, and a total C content occupying 0.12%; W, with a content occupying 78.60%; lanthanum, with a content occupying 0.008%; zirconium, with a content occupying 0.15%; an impurity Fe, with a content occupying 0.013%; an impurity Si02 , with a content occupying 0.01%; and other inevitable trace impurities, constituting a remainder of the material.
[0130] Experimental example
[0131] Each of the copper-tungsten alloy materials obtained in various embodiments and comparative examples is processed into a cylinder with a diameter of 20mm and a height of 5mm respectively, and electrical and mechanical performance of the cylinders are tested respectively. The testing method is according to a standard under GB/T5586-2016. When the electrical and mechanical performance are tested, one point is randomly selected in a middle area of the copper-tungsten alloy material, and two points are randomly selected in an edge area of the copper-tungsten alloy material, to select 3 points in total, and then the 3 points are tested respectively, to take an average value therefrom.
[0132] The test result is shown in Table 1 below.
Table 1 Performance testing result Density Hardness conductivity at Bending strength (g/cm 3 ) (HB) 20°C (IACS) (MPa) First 15.35 238 40.7% 1126.5 embodiment Second 15.42 241 44.1% 1059.2 embodiment Third 15.49 244 44.2% 1062.7 embodiment Fourth 15.41 243 43.9% 1078.1 embodiment Fifth 15.50 247 44.5% 1068.8 embodiment Sixth 15.37 240 41.2% 1113.3 embodiment Seventh 15.39 232 42.9% 1055.2 embodiment Eighth 15.52 255 44.6% 1108.9 embodiment Ninth 15.38 235 42.8% 1055.6 embodiment
Tenth 15.40 239 43.3% 1058.9 embodiment First comparative 15.16 226 33.09% 990.3 example Second comparative 15.26 230 35.09% 1000.1 example Fourth comparative 15.30 228 36.21% 1009.5 example Fifth comparative 15.35 239 39.7% 1112.7 example Note: Because testing results of the 3 points randomly selected in the third comparative example are quite different, an average value thereof is not calculated.
[0133] According to data in the above table, it may be known that in the copper-tungsten alloy material provided in the application, by doping graphene and defining a specific graphene content, wettability of an interface between the graphene and a metal matrix may be improved. Furthermore, graphene dissociates at internal defects of the material and constructs a continuous conductive network, so that the copper-tungsten alloy material has a dense microstructure, thereby greatly reducing influence of internal micro-defects on conductivity of the copper-tungsten alloy material, significantly improving conductivity and mechanical performance of the copper-tungsten alloy material, and having uniform material properties.
[0134] It is apparent that the above embodiments are merely examples for clarity of descriptions and do not limit implementations. Other variations or alterations in different forms may be made by those of ordinary skill in the art based on the above descriptions. It is unnecessary and impossible to enumerate all implementations here. Apparent variations or alterations resulting therefrom are still within the scope of protection created by the application.
Claims (10)
1. A copper-tungsten alloy material, composed of following components in their respective percentages with respect to mass of the material: Cu, occupying 18.0% to 22.0%; graphene, occupying 0.005% to 0.1%, and a total C content < 0.15%; an impurity Fe, with a content < 0.02%; an impurity SiO2 , with a content < 0.02%; and W and other inevitable trace impurities, constituting a remainder of the copper-tungsten alloy material.
2. The copper-tungsten alloy material of claim 1, wherein the copper-tungsten alloy material is composed of following components in their respective percentages with respect to the mass of the material: Cu, occupying 18.0% to 20.0%; graphene, with a content occupying 0.01% to 0.1%, and the total C content < 0.15%; the impurity Fe, with a content < 0.01%; the impurity SiO2 , with a content < 0.01%; and W and other inevitable trace impurities, constituting the remainder of the copper-tungsten alloy material.
3. A method for preparing a copper-tungsten alloy material, comprising following steps: mixing: weighing raw materials according to their respective selected composition ratios, and then mixing tungsten powders, graphene and part of copper powders by ball-milling, to obtain a mixed powder; blank pressing and sintering: performing press-forming and vacuum sintering to the mixed powder, and then performing cooling, to obtain a sintered blank; and infiltrating: after cleaning a surface of the sintered blank, performing copper infiltration under a vacuum condition, and then performing cooling and annealing.
4. The method for preparing a copper-tungsten alloy material of claim 3, wherein the ball-milling in the step of mixing has a speed of 1000 to 1500 rpm and a duration of 0.5 to 1.Oh.
5. The method for preparing a copper-tungsten alloy material of claim 3 or 4, wherein the graphene is an oligolayered graphene.
6. The method for preparing a copper-tungsten alloy material of any one of claims 3 to 5, wherein the graphene is an oxidized graphene oxide or a reductive oxidized graphene.
7. The method for preparing a copper-tungsten alloy material of any one of claims 3 to 6, wherein the part of copper powders in the step of mixing occupies 3% to 5% of a total mass of the raw materials, an average particle diameter of the copper powders is 20 to 100 um, and an average particle diameter of the tungsten powders is 20 to 100 um.
8. The method for preparing a copper-tungsten alloy material of any one of claims 3 to 7, wherein in the step of blank pressing and sintering, a pressure of the pressing is 550 to 650 MPa, the vacuum sintering is performed at a temperature of 1150 to 1250°C, a vacuum degree of 1x10-2 to 3x10-2 Pa and a sintering duration of 0.5 to 1.5h.
9. The method for preparing a copper-tungsten alloy material of any one of claims 3 to 8, wherein in the step of infiltrating, the copper infiltration is performed at a temperature of 1200 to 1300°C, a duration of 0.5 to 1.5h and a vacuum degree of lxlO-1 to 3x10-3 Pa; the cooling is performed at a temperature of 600 to 800°C; and the annealing is performed for 0.5 to lh at a temperature of 600 to 800°C and a vacuum of x10-2 to 3x10-2 Pa.
10. An application of the copper-tungsten alloy material of claim 1 or 2 or a copper-tungsten alloy material prepared by the method for preparing a copper-tungsten alloy material of any one of claims 3 to 9, applied in an arc contact material for a high voltage SF6 circuit breaker.
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