CN115555565B - Alloy cutter and preparation method thereof - Google Patents
Alloy cutter and preparation method thereof Download PDFInfo
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- CN115555565B CN115555565B CN202211165109.1A CN202211165109A CN115555565B CN 115555565 B CN115555565 B CN 115555565B CN 202211165109 A CN202211165109 A CN 202211165109A CN 115555565 B CN115555565 B CN 115555565B
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- 239000000956 alloy Substances 0.000 title claims abstract description 110
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 109
- 238000002360 preparation method Methods 0.000 title description 8
- 238000000576 coating method Methods 0.000 claims abstract description 88
- 239000011248 coating agent Substances 0.000 claims abstract description 79
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000002131 composite material Substances 0.000 claims abstract description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 17
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 239000010941 cobalt Substances 0.000 claims abstract description 10
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052742 iron Inorganic materials 0.000 claims abstract description 10
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims abstract description 10
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 10
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 65
- 238000010438 heat treatment Methods 0.000 claims description 40
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 36
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910002804 graphite Inorganic materials 0.000 claims description 34
- 239000010439 graphite Substances 0.000 claims description 34
- 239000000843 powder Substances 0.000 claims description 30
- 238000001035 drying Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 238000004140 cleaning Methods 0.000 claims description 22
- 239000010936 titanium Substances 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims description 17
- 229910008484 TiSi Inorganic materials 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 239000006185 dispersion Substances 0.000 claims description 15
- 235000019441 ethanol Nutrition 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000011049 filling Methods 0.000 claims description 10
- 238000007733 ion plating Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 238000001238 wet grinding Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 238000005255 carburizing Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 235000015895 biscuits Nutrition 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 230000007935 neutral effect Effects 0.000 claims description 5
- 238000007873 sieving Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- 238000003801 milling Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000012071 phase Substances 0.000 abstract description 13
- 238000005452 bending Methods 0.000 abstract description 5
- 230000004048 modification Effects 0.000 abstract description 5
- 238000012986 modification Methods 0.000 abstract description 5
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 5
- 229910009043 WC-Co Inorganic materials 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/148—Composition of the cutting inserts
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/02—Pretreatment of the fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/14—Making alloys containing metallic or non-metallic fibres or filaments by powder metallurgy, i.e. by processing mixtures of metal powder and fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/20—Carburising
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
- B22F2003/1051—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding by electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/241—Chemical after-treatment on the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/241—Chemical after-treatment on the surface
- B22F2003/242—Coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2222/00—Materials of tools or workpieces composed of metals, alloys or metal matrices
- B23B2222/28—Details of hard metal, i.e. cemented carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/08—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner applied by physical vapour deposition [PVD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/10—Coatings
- B23B2228/105—Coatings with specified thickness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/36—Multi-layered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
- B23B2228/61—Materials comprising whiskers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an alloy cutter, which comprises a substrate layer and a carburized layer, wherein the carburized layer is arranged on the surface of the substrate layer, a graphene-doped TiAISISIIN composite coating is deposited outside the carburized layer, and the substrate layer comprises the following raw materials in parts by weight: 70-80 parts of tungsten carbide, 5-8 parts of titanium carbide, 3-5 parts of niobium carbide, 0.3-0.8 part of silicon carbide whisker, 4-6 parts of cobalt, 1-3 parts of nickel, 1-3 parts of iron and 3-5 parts of yttrium. The hard alloy of the alloy cutter substrate layer takes tungsten carbide, titanium carbide and niobium carbide as hard phases, cobalt, iron and nickel as composite bonding phases, rare earth elements yttrium and silicon carbide whiskers are added for modification, the high-temperature bending resistance of the alloy cutter substrate layer is improved while the hardness of the substrate is improved, the carburization treatment enables the coated cutter to keep better mechanical properties at high temperature, graphene is doped in the coating, and the interface bonding capability between the coating and a substrate and between the coating and the coating is improved.
Description
Technical Field
The invention relates to the technical field of industrial cutters, in particular to an alloy cutter and a preparation method thereof.
Background
The high-speed cutting is widely applied to the processing fields of difficult-to-process materials such as high-temperature alloy, titanium alloy, high-strength steel and the like. Along with the increase of the cutting speed, the cutting temperature near the cutting area is up to 500-1000 ℃. Therefore, the tool is extremely susceptible to oxidation during cutting, thereby causing structural changes and performance degradation of the tool, resulting in reduced cutting life, and even severe wear and abrupt fracture failure of the tool. Therefore, it is important to improve the oxidation resistance and mechanical properties of the cutter at high temperature. The hard alloy is one of the most widely used tool materials at present, and the traditional WC-Co hard alloy is obviously oxidized at 600 ℃, so that the performance of the tool is drastically reduced, and the cutting life of the tool is shortened.
The surface of the cutter is plated with a high-hardness and wear-resistant coating, so that the cutting service life of the cutter can be effectively prolonged, and the processing efficiency and quality are improved. The TiAIN coating has the advantages of high hardness, good wear resistance and the like, and is a mainstream cutter coating applied in the industry at present. However, as the temperature of the cutting tool increases during cutting operation, it is found that the Co element diffusion at the coating/substrate interface affects the coating structure and thus the hardness and wear resistance of the coating. Therefore, improving the high temperature performance of the traditional WC-Co hard alloy and prolonging the cutting life of the WC-Co hard alloy tool are the problems to be solved urgently.
Disclosure of Invention
In order to solve the problems in the background art, the invention provides an alloy cutter and a preparation method thereof, wherein the hard alloy of the base material layer of the alloy cutter takes tungsten carbide, titanium carbide and niobium carbide as hard phases, cobalt, iron and nickel as composite bonding phases, rare earth elements yttrium and silicon carbide whiskers are added for modification, the high-temperature bending resistance of the base material is improved while the hardness of the base material is improved, the carburization treatment ensures that the coated cutter can keep better mechanical properties at high temperature, graphene is doped in the coating, and the interface bonding capability between the coating and a substrate and between the coating and the coating is improved.
The aim of the invention can be achieved by the following technical scheme:
the invention provides an alloy cutter, which comprises a substrate layer and a carburized layer, wherein the carburized layer is arranged on the surface of the substrate layer, a graphene-doped TiAISISIIN composite coating is deposited outside the carburized layer, and the substrate layer comprises the following raw materials in parts by weight: 70-80 parts of tungsten carbide, 5-8 parts of titanium carbide, 3-5 parts of niobium carbide, 0.3-0.8 part of silicon carbide whisker, 4-6 parts of cobalt, 1-3 parts of nickel, 1-3 parts of iron and 3-5 parts of yttrium.
Further preferably, the carburized layer has a gradient structure in which the Co element content increases from the surface layer to the inner layer, and the carburized layer has a thickness of 500 to 800 μm.
Further preferably, the graphene-doped TiAISiN composite coating comprises a TiN coating, a TiAIN coating and a TiAISiN coating, wherein the thickness of the TiN coating is 100-200 mu m, the thickness of the TiAIN coating is 100-200 mu m, and the thickness of the TiAISiN coating is 200-300 mu m.
Further preferably, the diameter d of the silicon carbide whisker is more than 120nm, and the length is 10-20 mu m, the silicon carbide whisker needs to be subjected to dispersion treatment before use, and the step of the dispersion treatment comprises the following steps:
(1) Firstly, silicon carbide whisker is prepared according to a solid-to-liquid ratio of 1: 8-10, adding 1-2 mol/L hydrofluoric acid to carry out acid washing for 12-24 hours, washing with deionized water to be neutral, then placing into a constant temperature drying oven, heating to 70-90 ℃, and drying to obtain silicon carbide whisker powder subjected to acid washing treatment;
(2) Adding gamma-aminopropyl triethoxysilane into ethanol to prepare gamma-aminopropyl triethoxysilane ethanol solution with the mass concentration of 0.5-1%, and then, carrying out acid washing treatment on silicon carbide whisker powder in the step (1) according to the solid-liquid ratio of 1: and 2-4, adding the silicon carbide whisker into the solution, performing ultrasonic dispersion, stirring for 2-4 hours, then placing into a blast drier, heating to 160-180 ℃, drying, and finally sieving with a 100-mesh sieve to obtain the silicon carbide whisker subjected to dispersion treatment.
The invention also provides a preparation method of the alloy cutter, which comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet milling, wherein the wet milling medium is absolute ethyl alcohol, the milling balls are hard alloy balls, the granularity of the hard alloy balls is 10-20 mm, and heating the wet milled slurry in a vacuum drying oven to 90-110 ℃ for drying for 4-6 hours;
s2, filling the ball-milled raw material powder into a graphite mold, pressing a cutter biscuit by using a metal pressure head, filling a proper amount of landfill powder, prepressing by using the graphite pressure head with the same pressing process, and finally sintering in a discharge plasma furnace in a gradient heating mode to prepare a cutter blank;
and S3, polishing the cutter blank, then cleaning the cutter blank with alcohol, finally cleaning the cutter blank with an ultrasonic cleaner, drying the cutter blank in a drying oven, and setting the temperature to be 80-l 00 ℃ to obtain the cutter fine blank.
S4, placing the cutter fine blank into a closed carburizing furnace, heating the furnace to 1300-1350 ℃, and introducing H 2 And CH (CH) 4 Keeping the mixed gas for 40-50 min, cooling along with a furnace, and taking out to obtain the alloy cutter containing the carburized layer;
s5, sequentially preparing TiN, tiAIN, tiAISiN coatings on the carburized hard alloy cutter by a cathodic arc ion plating process to form a graphene doped TiAISIIN composite coating, and obtaining the alloy cutter.
Further preferably, sintering in step S2 by adopting a gradient heating mode specifically comprises the following steps: firstly, heating to 550-650 ℃ at the speed of 5-10 ℃/min, preserving heat for 40-60 min, then heating to 1300-1500 ℃ at the speed of 15-20 ℃/min, preserving heat for 60-90 min, and finally cooling to room temperature along with a furnace.
Further preferably, H in the mixed gas in step S4 2 And CH (CH) 4 The volume ratio of (2) is 40-60:1.
Further preferably, the coating materials required for preparing the graphene doped TiAISISININ coating in the step S5 cathodic arc ion plating process comprise a graphite target, a Ti target, an alloy AITi target and an alloy TiSi target, wherein the mass ratio of Ti to Al in the alloy AITi target is 2:1, and the mass ratio of Ti to Si in the alloy TiSi target is 4:1.
Further preferably, step S5 is specifically:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 400-500 ℃;
s502, introducing argon into the furnace chamber, and adjusting the substrate bias voltage in an argon environment, wherein the pressure value is 700-800V, and performing plasma etching cleaning for 3-5 min; setting a bias voltage of 700-950V, starting a Ti target and a TiSi target to perform ion sputtering bombardment on the surface of a workpiece, and cleaning for 9-18 min;
s503, adjusting the bias voltage to 60-120V, stopping introducing argon and introducing N 2 And H 2 The flow of the mixed gas is 150-300 ml/min, the vacuum degree range is controlled to be 0.005-0.05 mbar, the targets are electrified in sequence, and a graphene doped TiAISIN coating is deposited on the surface of the carburized alloy cutter;
s504, cooling to 180 ℃ along with a furnace under vacuum, and then air-cooling to room temperature to obtain the alloy cutter.
Further preferably, N in step S503 2 And H 2 The volume ratio of the graphene-doped TiAISiN coating is 8:1, the graphite target and the Ti target are firstly opened for 15-30 s during deposition, then the graphite target and the alloy AITi target are opened for 15-30 s, finally the graphite target, the alloy AITi target and the alloy TiSi target are opened for 30-45 s, and the graphene-doped TiAISiN coating is obtained.
The invention has the beneficial effects that:
the hard alloy of the alloy cutter substrate layer adopts tungsten carbide, titanium carbide and niobium carbide as hard phases, the added rare metal carbide can be combined with the original hard phases WC and TiC to form a complex solid solution structure, the hard phase structure is strengthened, meanwhile, the growth of grains of the hard phase can be restrained, the uniformity of the structure is enhanced, the comprehensive performance of the hard alloy is improved, cobalt, iron and nickel are adopted as composite bonding phases, the hard alloy has better high-temperature bending resistance, yttrium and silicon carbide whisker are added for modification, the mechanical property and cutting performance of the hard alloy can be obviously improved by adding the rare earth element, and the silicon carbide whisker is adopted as the toughening reinforcing phase of the hard alloy material, so that the mechanical property of the material is greatly improved, and the wear resistance and the corrosion resistance of the composite material are higher.
When the carbide lathe tool base material is carburized, active C atoms are formed by decomposition of a carburized medium, the concentration of the active C atoms on the surface of the alloy is high, the concentration of carbon on the core is low, gradient distribution of carbon concentration from the surface to the core is formed, and in a high-temperature environment, compared with a homogeneous carbide base body, the Co-deficient carbide base body on the surface increases the diffusion activation energy of Co, and Co in the base body is more difficult to diffuse to a coating, so that the carburized coated tool can keep better mechanical property at high temperature. Meanwhile, the graphene doped TiAISININ composite coating is deposited on the surface of the carburized hard alloy cutter by adopting an arc ion plating process, and the interface bonding performance among the composite layers is further improved by adding the graphene.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The alloy cutter comprises a substrate layer and a carburized layer, wherein the carburized layer is arranged on the surface of the substrate layer, the carburized layer is of a gradient structure with the Co element content increasing gradually from a surface layer to an inner layer, the thickness of the carburized layer is 650 mu m, a graphene-doped TiAISIN composite coating is deposited outside the carburized layer, the graphene-doped TiAISISIN composite coating comprises TiN, tiAIN and TiAISIN coatings, the thickness of the TiN coating is 150 mu m, the thickness of the TiAIN coating is 180 mu m, and the thickness of the TiAISISIN coating is 250 mu m.
The substrate layer comprises the following raw materials in parts by weight: 75 parts of tungsten carbide, 6 parts of titanium carbide, 4 parts of niobium carbide, 0.5 part of silicon carbide whisker, 5 parts of cobalt, 2 parts of nickel, 2 parts of iron and 4 parts of yttrium. The diameter d=150 nm and the length of the silicon carbide whisker is 15 mu m, the silicon carbide whisker needs to be subjected to dispersion treatment before use, and the dispersion treatment comprises the following steps:
(1) Firstly, silicon carbide whisker is prepared according to a solid-to-liquid ratio of 1:9, adding 1.5mol/L hydrofluoric acid to carry out acid washing for 18 hours, washing with deionized water to be neutral, then placing the mixture into a constant-temperature drying oven, heating to 80 ℃, and drying the mixture to obtain acid-washed silicon carbide whisker powder;
(2) Adding gamma-aminopropyl triethoxysilane into ethanol to prepare gamma-aminopropyl triethoxysilane ethanol solution with the mass concentration of 0.8%, and then, carrying out acid washing treatment on silicon carbide whisker powder in the step (1) according to the solid-to-liquid ratio of 1: and 3, adding the silicon carbide whisker into the solution, performing ultrasonic dispersion, stirring for 3 hours, then putting into a blast drier, heating to 170 ℃, drying, and finally sieving with a 100-mesh sieve to obtain the dispersion-treated silicon carbide whisker.
The preparation method of the alloy cutter comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet grinding, wherein the wet grinding medium is absolute ethyl alcohol, the grinding balls are hard alloy balls, the granularity of the hard alloy balls is 15mm, and heating the wet ground slurry in a vacuum drying oven to 100 ℃ for drying for 5 hours;
s2, filling the ball-milled raw material powder into a graphite mold, pressing a cutter biscuit by using a metal pressing head, filling a proper amount of landfill powder, prepressing by using the graphite pressing head with the same pressing process, finally heating to 600 ℃ at the speed of 8 ℃/min in a discharge plasma furnace, preserving heat for 50min, heating to 1330 ℃ at the speed of 17 ℃/min, preserving heat for 75min, and finally cooling to room temperature along with the furnace to prepare a cutter blank;
and S3, polishing the cutter blank, then cleaning the cutter blank with alcohol, finally cleaning the cutter blank with an ultrasonic cleaner, drying the cutter blank in a drying oven, and setting the temperature to 90 ℃ to obtain the cutter fine blank.
S4, placing the cutter fine blank into a closed carburizing furnace, heating the furnace to 1320 ℃, and introducing H with the volume ratio of 50:1 2 And CH (CH) 4 Keeping for 45min, cooling along with a furnace, and taking out to obtain the alloy cutter containing the carburized layer;
s5, sequentially preparing TiN, tiAIN, tiAISiN coatings on the carburized hard alloy cutter by a cathodic arc ion plating process to form a graphene doped TiAISININ composite coating, wherein the method specifically comprises the following steps of:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 450 ℃;
s502, introducing argon into the furnace chamber, and adjusting the substrate bias voltage in an argon environment, wherein the pressure value is 750V, and performing plasma etching cleaning for 4min; setting a bias voltage of 800V, starting a Ti target and a TiSi target to perform ion sputtering bombardment on the surface of a workpiece, and cleaning for 15min;
s503, adjusting the bias voltage to 90V, stopping introducing argon, and introducing N with the volume ratio of 8:1 2 And H 2 The flow of the mixed gas is 220ml/min, the vacuum degree range is controlled to be 0.005-0.05 mbar, the targets are sequentially electrified, a graphite target and a Ti target are firstly opened, 18s of deposition is carried out, then the graphite target and an alloy AITi target are opened, 20s of deposition is carried out, finally the graphite target, the alloy AITi target and the alloy TiSi target are opened, 35s of deposition is carried out, a graphene-doped TiAISiN coating is obtained, and the graphene-doped TiAISiN coating is deposited on the surface of a carburized alloy cutter;
s504, cooling to 180 ℃ along with a furnace under vacuum, and then air-cooling to room temperature to obtain the alloy cutter.
Example 2
The alloy cutter comprises a substrate layer and a carburized layer, wherein the carburized layer is arranged on the surface of the substrate layer, the carburized layer is of a gradient structure with the Co element content increasing gradually from a surface layer to an inner layer, the thickness of the carburized layer is 500 mu m, a graphene-doped TiAISIN composite coating is deposited outside the carburized layer, the graphene-doped TiAISISIN composite coating comprises TiN, tiAIN and TiAISIN coatings, the thickness of the TiN coating is 100 mu m, the thickness of the TiAIN coating is 100 mu m, and the thickness of the TiAISISIN coating is 200 mu m.
The substrate layer comprises the following raw materials in parts by weight: 70 parts of tungsten carbide, 5 parts of titanium carbide, 3 parts of niobium carbide, 0.3 part of silicon carbide whisker, 4 parts of cobalt, 1 part of nickel, 1 part of iron and 3 parts of yttrium. The diameter d=120 nm and the length of the silicon carbide whisker is 10 mu m, the silicon carbide whisker needs to be subjected to dispersion treatment before use, and the dispersion treatment comprises the following steps:
(1) Firstly, silicon carbide whisker is prepared according to a solid-to-liquid ratio of 1:8, adding 1mol/L hydrofluoric acid to carry out acid washing for 12 hours, washing with deionized water to be neutral, then placing the mixture into a constant-temperature drying oven, heating to 70 ℃, and drying the mixture to obtain acid-washed silicon carbide whisker powder;
(2) Adding gamma-aminopropyl triethoxysilane into ethanol to prepare gamma-aminopropyl triethoxysilane ethanol solution with the mass concentration of 0.5%, and then, carrying out acid washing treatment on silicon carbide whisker powder in the step (1) according to the solid-to-liquid ratio of 1:2 adding the silicon carbide whisker into the solution, carrying out ultrasonic dispersion and stirring for 2 hours, then placing the silicon carbide whisker into a blast drier, heating to 160 ℃, drying, and finally sieving the silicon carbide whisker with a 100-mesh sieve to obtain the silicon carbide whisker subjected to dispersion treatment.
The preparation method of the alloy cutter comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet grinding, wherein the wet grinding medium is absolute ethyl alcohol, the grinding balls are hard alloy balls, the granularity of the hard alloy balls is 10mm, and heating the wet ground slurry in a vacuum drying oven to 90 ℃ for drying for 4 hours;
s2, filling the ball-milled raw material powder into a graphite mold, pressing a cutter biscuit by using a metal pressing head, filling a proper amount of landfill powder, prepressing by using the graphite pressing head with the same pressing process, finally heating to 550 ℃ at a speed of 5 ℃/min in a discharge plasma furnace, preserving heat for 40min, heating to 1300 ℃ at a speed of 15 ℃/min, preserving heat for 60min, and finally cooling to room temperature along with the furnace to prepare a cutter blank;
and S3, polishing the cutter blank, then cleaning the cutter blank with alcohol, finally cleaning the cutter blank with an ultrasonic cleaner, drying the cutter blank in a drying oven, and setting the temperature to be 80 ℃ to obtain the cutter fine blank.
S4, placing the cutter fine blank into a closed carburizing furnace, heating the furnace to 1300 ℃, and introducing H with the volume ratio of 40:1 2 And CH (CH) 4 Keeping for 40min, cooling along with the furnace, and taking out to obtain the alloy cutter containing the carburized layer;
s5, sequentially preparing TiN, tiAIN, tiAISiN coatings on the carburized hard alloy cutter by a cathodic arc ion plating process to form a graphene doped TiAISININ composite coating, and obtaining the alloy cutter specifically comprises the following steps:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 400 ℃;
s502, introducing argon into the furnace chamber, and adjusting the substrate bias voltage in an argon environment, wherein the pressure value is 700V, and performing plasma etching cleaning for 3min; setting bias voltage 700V, starting Ti target and TiSi target to perform ion sputtering bombardment on the surface of the workpiece, and cleaning for 9min;
s503, adjusting the bias voltage to 60V, stopping introducing argon, and introducing N with the volume ratio of 8:1 2 And H 2 The flow of the mixed gas is 150ml/min, the vacuum degree range is controlled to be 0.005mbar, the targets are sequentially electrified, firstly, a graphite target and a Ti target are opened, 15s of deposition is carried out, then, the graphite target and an alloy AITi target are opened, 15s of deposition is carried out, finally, the graphite target, the alloy AITi target and an alloy TiSi target are opened, 35s of deposition is carried out, a graphene-doped TiAISiN coating is obtained, and the graphene-doped TiAISiN coating is deposited on the surface of a carburized alloy cutter;
s504, cooling to 180 ℃ along with a furnace under vacuum, and then air-cooling to room temperature to obtain the alloy cutter.
Example 3
The alloy cutter comprises a substrate layer and a carburized layer, wherein the carburized layer is arranged on the surface of the substrate layer, the carburized layer is of a gradient structure with the Co element content increasing gradually from a surface layer to an inner layer, the thickness of the carburized layer is 800 mu m, a graphene-doped TiAISIN composite coating is deposited outside the carburized layer, the graphene-doped TiAISISIN composite coating comprises TiN, tiAIN and TiAISIN coatings, the thickness of the TiN coating is 200 mu m, the thickness of the TiAIN coating is 200 mu m, and the thickness of the TiAISISIN coating is 300 mu m.
The substrate layer comprises the following raw materials in parts by weight: 80 parts of tungsten carbide, 8 parts of titanium carbide, 5 parts of niobium carbide, 0.8 part of silicon carbide whisker, 6 parts of cobalt, 3 parts of nickel, 3 parts of iron and 5 parts of yttrium. The diameter d=200 nm and the length of the silicon carbide whisker are 20 mu m, the silicon carbide whisker needs to be subjected to dispersion treatment before use, and the dispersion treatment comprises the following steps:
(1) Firstly, silicon carbide whisker is prepared according to a solid-to-liquid ratio of 1:10 adding 2mol/L hydrofluoric acid to carry out acid washing for 24 hours, washing with deionized water to be neutral, then placing the mixture into a constant temperature drying oven, heating to 90 ℃, and drying the mixture to obtain acid-washed silicon carbide whisker powder;
(2) Adding gamma-aminopropyl triethoxysilane into ethanol to prepare gamma-aminopropyl triethoxysilane ethanol solution with the mass concentration of 1%, and then, carrying out acid washing treatment on the silicon carbide whisker powder in the step (1) according to the solid-to-liquid ratio of 1:4 adding the silicon carbide whisker into the solution, performing ultrasonic dispersion and stirring for 4 hours, then placing the silicon carbide whisker into a blast drier, heating to 180 ℃, drying, and finally sieving the silicon carbide whisker with a 100-mesh sieve to obtain the dispersion-treated silicon carbide whisker.
The preparation method of the alloy cutter comprises the following steps:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet grinding, wherein the wet grinding medium is absolute ethyl alcohol, the grinding balls are hard alloy balls, the granularity of the hard alloy balls is 20mm, and heating the wet ground slurry in a vacuum drying oven at 110 ℃ for 6 hours;
s2, filling the ball-milled raw material powder into a graphite mold, pressing a cutter biscuit by using a metal pressing head, filling a proper amount of landfill powder, prepressing by using the graphite pressing head with the same pressing process, finally heating to 650 ℃ at a speed of 10 ℃/min in a discharge plasma furnace, preserving heat for 60min, heating to 1500 ℃ at a speed of 20 ℃/min, preserving heat for 90min, and finally cooling to room temperature along with the furnace to prepare a cutter blank;
and S3, polishing the cutter blank, then cleaning the cutter blank with alcohol, finally cleaning the cutter blank with an ultrasonic cleaner, drying the cutter blank in a drying oven, and setting the temperature at l00 ℃ to obtain the cutter fine blank.
S4, placing the cutter fine blank into a closed carburizing furnace, heating the furnace to 1350 ℃, and introducing H with the volume ratio of 60:1 2 And CH (CH) 4 Keeping for 50min, cooling along with the furnace, and taking out to obtain the alloy cutter containing the carburized layer;
s5, sequentially preparing TiN, tiAIN, tiAISiN coatings on the carburized hard alloy cutter by a cathodic arc ion plating process to form a graphene doped TiAISININ composite coating, and obtaining the alloy cutter specifically comprises the following steps:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 500 ℃;
s502, introducing argon into a furnace chamber, regulating a substrate bias voltage in an argon environment, performing plasma etching cleaning at a pressure value of 800V for 5min, setting a bias voltage of 950V, starting a Ti target and a TiSi target to perform ion sputtering bombardment on the surface of a workpiece, and cleaning for 18min;
s503, adjusting the bias voltage to 120V, stopping introducing argon, and introducing N with the volume ratio of 8:1 2 And H 2 The flow of the mixed gas is 300ml/min, the vacuum degree range is controlled to be 0.05mbar, the targets are sequentially electrified, firstly, a graphite target and a Ti target are opened, the deposition is carried out for 30 seconds, then, the graphite target and an alloy AITi target are opened, the deposition is carried out for 30 seconds, finally, the graphite target, the alloy AITi target and an alloy TiSi target are opened, the deposition is carried out for 45 seconds, a graphene-doped TiAISIN coating is obtained, and the graphene-doped TiAISIN coating is deposited on the surface of a carburized alloy cutter;
s504, cooling to 180 ℃ along with a furnace under vacuum, and then air-cooling to room temperature to obtain the alloy cutter.
And (3) detecting a base material:
alloy density was calculated by archimedes' drainage method using the tool blank prepared in step S2 of examples 1 to 3, hardness test was performed by indentation method using vickers hardness tester of model HVS-50 after polishing, load of 30kgf was used in the experiment, and pressure was maintained for 15S. The bending strength of the test sample is measured on an electronic universal tester (AGS-X5 KN) by adopting a three-point bending resistance method, and the span of the test sample is set to be 15mm and the load loading rate is set to be 0.5mm/min. Fracture toughness is measured on the indentation produced by vickers hardness by the formula:performing a calculation, whereinHV 30 Is the hardness of the steel in the Vickers scale,L 1 ~L 4 four crack lengths were generated at the indentation angle in order to measure the vickers hardness. The data obtained are shown in table 1 below:
table 1 alloy tool substrate property test results
，
As can be seen from Table 1, the cemented carbide of the substrate layer of the invention takes tungsten carbide, titanium carbide and niobium carbide as hard phases and cobalt, iron and nickel as composite bonding phases, so that the cemented carbide has better high-temperature bending resistance, and the addition of rare earth elements yttrium and silicon carbide whisker for modification can obviously improve the mechanical properties of the cemented carbide, and the addition of rare earth elements takes silicon carbide whisker as a toughening reinforcing phase of the cemented carbide material, thereby greatly improving the mechanical properties of the material.
And (3) coating detection:
the graphene-doped tiassiin coating prepared in step S5 of examples 1-3 was tested for film-substrate binding force using a scratch method. The critical load was tested using a scratch tester (switzland) manufactured by swiss CSM company, the loading load was 100N, the scratch length was 3mm, and each sample was scored 2-3 times. In the test process, under the action of load, the needle point is scratched through the surface of the coating at the speed of 6mm/min until the coating is scratched to expose the substrate, and the critical load at the moment is Lc. The general scratch threshold values can be classified into Lc1, lc2, lc3, and the value Lc2 at which peeling of the coating edge starts to occur is generally used as a criterion for measuring the binding force of the coating to the substrate. The data obtained are shown in table 2 below:
TABLE 2 Membrane-substrate binding force detection results
，
As can be seen from table 1, according to the invention, when the carburization treatment is carried out on the hard alloy turning tool base material, the graphene doped tiassin composite coating is deposited on the surface of the carburized hard alloy turning tool by adopting the arc ion plating process, so that the interface bonding performance between the composite layers is improved.
The foregoing describes one embodiment of the present invention in detail, but the description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (6)
1. The alloy cutter is characterized by comprising a base material layer and a carburized layer, wherein the carburized layer is arranged on the surface of the base material layer, a graphene-doped TiAISISIIN composite coating is deposited outside the carburized layer, the carburized layer is of a gradient structure with the increasing Co element content from a surface layer to an inner layer, and the thickness of the carburized layer is 500-800 mu m;
the graphene-doped TiAISiN composite coating comprises a TiN coating, a TiAIN coating and a TiAISiN coating, wherein the thickness of the TiN coating is 100-200 mu m, the thickness of the TiAIN coating is 100-200 mu m, and the thickness of the TiAISiN coating is 200-300 mu m;
the method for preparing the graphene-doped TiAISIIN composite coating comprises the following steps of sequentially preparing TiN, tiAIN, tiAISiN coatings on a carburized hard alloy cutter by adopting a cathodic arc ion plating process to form the graphene-doped TiAISIIN composite coating:
s501, placing a carburized alloy cutter into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 400-500 ℃;
s502, introducing argon into the furnace chamber, and adjusting the substrate bias voltage in an argon environment, wherein the pressure value is 700-800V, and performing plasma etching cleaning for 3-5 min; setting a bias voltage of 700-950V, starting a Ti target and a TiSi target to perform ion sputtering bombardment on the surface of a workpiece, and cleaning for 9-18 min;
s503, adjusting the bias voltage to 60-120V, stopping introducing argon and introducing N 2 And H 2 N, N 2 And H 2 The volume ratio of the graphite target to the Ti target is 8:1, the flow of the gas mixture is 150-300 ml/min, the vacuum degree range is controlled to be 0.005-0.05 mbar, the graphite target and the Ti target are firstly opened during deposition, 15-30 s of the graphite target and the alloy AITi target are deposited, 15-30 s of the graphite target and the alloy AITi target are then opened, and finally the graphite target, the alloy AITi target and the alloy TiSi target are opened, and 30-45 s of the graphene doped TiAISiN coating is deposited, namely the graphene doped TiAISiN coating is deposited on the surface of the carburized alloy cutter;
the substrate layer comprises the following raw materials in parts by weight: 70-80 parts of tungsten carbide, 5-8 parts of titanium carbide, 3-5 parts of niobium carbide, 0.3-0.8 part of silicon carbide whisker, 4-6 parts of cobalt, 1-3 parts of nickel, 1-3 parts of iron and 3-5 parts of yttrium.
2. The alloy cutter of claim 1, wherein the silicon carbide whiskers have a diameter d > 120nm and a length of 10-20 μm, and the silicon carbide whiskers need to be subjected to dispersion treatment before use, and the step of dispersion treatment comprises:
(1) Firstly, silicon carbide whisker is prepared according to a solid-to-liquid ratio of 1: 8-10, adding 1-2 mol/L hydrofluoric acid to carry out acid washing for 12-24 hours, washing with deionized water to be neutral, then placing into a constant temperature drying oven, heating to 70-90 ℃, and drying to obtain silicon carbide whisker powder subjected to acid washing treatment;
(2) Adding gamma-aminopropyl triethoxysilane into ethanol to prepare gamma-aminopropyl triethoxysilane ethanol solution with the mass concentration of 0.5-1%, and then, carrying out acid washing treatment on silicon carbide whisker powder in the step (1) according to the solid-liquid ratio of 1: and 2-4, adding the silicon carbide whisker into the solution, performing ultrasonic dispersion, stirring for 2-4 hours, then placing into a blast drier, heating to 160-180 ℃, drying, and finally sieving with a 100-mesh sieve to obtain the silicon carbide whisker subjected to dispersion treatment.
3. A method of producing an alloy tool according to any one of claims 1-2, comprising the steps of:
s1, weighing base material layer powder, adding the base material layer powder into a roller ball mill for wet milling, wherein the wet milling medium is absolute ethyl alcohol, the milling balls are hard alloy balls, the granularity of the hard alloy balls is 10-20 mm, and heating the wet milled slurry in a vacuum drying oven to 90-110 ℃ for drying for 4-6 hours;
s2, filling the ball-milled raw material powder into a graphite mold, pressing a cutter biscuit by using a metal pressure head, filling a proper amount of landfill powder, prepressing by using the graphite pressure head with the same pressing process, and finally sintering in a discharge plasma furnace in a gradient heating mode to prepare a cutter blank;
s3, polishing the cutter blank, then cleaning the cutter blank with alcohol, finally cleaning the cutter blank with an ultrasonic cleaner, drying the cutter blank in a drying oven, and setting the temperature to be 80-l 00 ℃ to obtain a cutter fine blank;
s4, placing the cutter fine blank into a closed carburizing furnace, heating the furnace to 1300-1350 ℃, and introducing H 2 And CH (CH) 4 Is kept for 40-50 min, and is taken out after being cooled along with the furnace, thus obtaining the carburizing-containing gasAlloy cutters of the layers;
s5, sequentially preparing TiN, tiAIN, tiAISiN coatings on the carburized hard alloy cutter by a cathodic arc ion plating process to form a graphene doped TiAISININ composite coating, thus obtaining the alloy cutter;
the step S5 specifically comprises the following steps:
s501, placing the alloy cutter subjected to carburization in the step S4 into a PVD furnace tube, adjusting the pressure range P to be less than 0.005mbar, and heating the furnace chamber to 400-500 ℃;
s502, introducing argon into the furnace chamber, and adjusting the substrate bias voltage in an argon environment, wherein the pressure value is 700-800V, and performing plasma etching cleaning for 3-5 min; setting a bias voltage of 700-950V, starting a Ti target and a TiSi target to perform ion sputtering bombardment on the surface of a workpiece, and cleaning for 9-18 min;
s503, adjusting the bias voltage to 60-120V, stopping introducing argon and introducing N 2 And H 2 N, N 2 And H 2 The volume ratio of the graphite target to the Ti target is 8:1, the flow of the gas mixture is 150-300 ml/min, the vacuum degree range is controlled to be 0.005-0.05 mbar, the graphite target and the Ti target are firstly opened during deposition, 15-30 s of the graphite target and the alloy AITi target are deposited, 15-30 s of the graphite target and the alloy AITi target are then opened, and finally the graphite target, the alloy AITi target and the alloy TiSi target are opened, and 30-45 s of the graphene doped TiAISiN coating is deposited, namely the graphene doped TiAISiN coating is deposited on the surface of the carburized alloy cutter;
s504, cooling to 180 ℃ along with a furnace under vacuum, and then air-cooling to room temperature to obtain the alloy cutter.
4. The method for manufacturing an alloy tool according to claim 3, wherein the sintering in step S2 by using a gradient heating method is specifically: firstly, heating to 550-650 ℃ at the speed of 5-10 ℃/min, preserving heat for 40-60 min, then heating to 1300-1500 ℃ at the speed of 15-20 ℃/min, preserving heat for 60-90 min, and finally cooling to room temperature along with a furnace.
5. The method of manufacturing an alloy tool according to claim 3, wherein H in the mixed gas in step S4 2 And CH (CH) 4 The volume ratio of (2) is 40-60:1.
6. The method for preparing the alloy cutter according to claim 3, wherein the coating materials required for preparing the graphene doped TiAISISIIN coating in the step S5 cathodic arc ion plating process comprise a graphite target, a Ti target, an alloy AITi target and an alloy TiSi target, wherein the mass ratio of Ti to Al in the alloy AITi target is 2:1, and the mass ratio of Ti to Si in the alloy TiSi target is 4:1.
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| US6482476B1 (en) * | 1997-10-06 | 2002-11-19 | Shengzhong Frank Liu | Low temperature plasma enhanced CVD ceramic coating process for metal, alloy and ceramic materials |
| CA2798947A1 (en) * | 2011-12-23 | 2013-06-23 | Halliburton Energy Services, Inc. | Erosion resistant hard composite materials |
| CN104630533A (en) * | 2015-02-12 | 2015-05-20 | 成都邦普合金材料有限公司 | Preparation method of composite hard alloy used as cutter material |
| CN105478779A (en) * | 2015-11-25 | 2016-04-13 | 芜湖市鸿坤汽车零部件有限公司 | Method for preparing engine crankshaft connecting rod bypowder metallurgyprocess |
| CN112222405A (en) * | 2020-09-14 | 2021-01-15 | 蓬莱市超硬复合材料有限公司 | Preparation system and method of hard alloy cutter |
| WO2022068812A1 (en) * | 2020-09-30 | 2022-04-07 | 全球能源互联网研究院有限公司 | Copper-tungsten alloy material, preparation method therefor, and application thereof |
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| US6946096B2 (en) * | 2002-05-03 | 2005-09-20 | Honeywell International, Inc. | Use of powder metal sintering/diffusion bonding to enable applying silicon carbide or rhenium alloys to face seal rotors |
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|---|---|---|---|---|
| US6482476B1 (en) * | 1997-10-06 | 2002-11-19 | Shengzhong Frank Liu | Low temperature plasma enhanced CVD ceramic coating process for metal, alloy and ceramic materials |
| CA2798947A1 (en) * | 2011-12-23 | 2013-06-23 | Halliburton Energy Services, Inc. | Erosion resistant hard composite materials |
| CN104630533A (en) * | 2015-02-12 | 2015-05-20 | 成都邦普合金材料有限公司 | Preparation method of composite hard alloy used as cutter material |
| CN105478779A (en) * | 2015-11-25 | 2016-04-13 | 芜湖市鸿坤汽车零部件有限公司 | Method for preparing engine crankshaft connecting rod bypowder metallurgyprocess |
| CN112222405A (en) * | 2020-09-14 | 2021-01-15 | 蓬莱市超硬复合材料有限公司 | Preparation system and method of hard alloy cutter |
| WO2022068812A1 (en) * | 2020-09-30 | 2022-04-07 | 全球能源互联网研究院有限公司 | Copper-tungsten alloy material, preparation method therefor, and application thereof |
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