WO2022036713A1 - 图像传感器、指纹检测装置和电子设备 - Google Patents

图像传感器、指纹检测装置和电子设备 Download PDF

Info

Publication number
WO2022036713A1
WO2022036713A1 PCT/CN2020/110604 CN2020110604W WO2022036713A1 WO 2022036713 A1 WO2022036713 A1 WO 2022036713A1 CN 2020110604 W CN2020110604 W CN 2020110604W WO 2022036713 A1 WO2022036713 A1 WO 2022036713A1
Authority
WO
WIPO (PCT)
Prior art keywords
output
pixel
image sensor
circuit
pixel circuit
Prior art date
Application number
PCT/CN2020/110604
Other languages
English (en)
French (fr)
Chinese (zh)
Inventor
王程左
Original Assignee
深圳市汇顶科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市汇顶科技股份有限公司 filed Critical 深圳市汇顶科技股份有限公司
Priority to PCT/CN2020/110604 priority Critical patent/WO2022036713A1/zh
Priority to EP20926391.2A priority patent/EP3985555B1/de
Priority to KR1020217031868A priority patent/KR102701567B1/ko
Priority to US17/505,001 priority patent/US11837013B2/en
Publication of WO2022036713A1 publication Critical patent/WO2022036713A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/141—Control of illumination
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147—Details of sensors, e.g. sensor lenses
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14678—Contact-type imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Definitions

  • Embodiments of the present application relate to the field of image sensors, and more particularly, to image sensors, fingerprint detection devices, and electronic devices.
  • An image sensor is a device that converts optical signals into electrical signals.
  • An image sensor usually includes a pixel circuit, an output circuit, etc., wherein the pixel circuit can convert the received optical signal into an electrical signal and input it to the output circuit, and the output circuit can read out the electrical signal output by the pixel circuit.
  • the area and power consumption of the image sensor have become one of the factors affecting its development. Therefore, how to reduce the area and power consumption of the image sensor has become an urgent problem to be solved.
  • Embodiments of the present application provide an image sensor, a fingerprint detection device, and an electronic device, which have small area and power consumption.
  • an image sensor comprising: an array of pixel circuits, wherein each pixel circuit is used to generate an output signal according to a received light signal; an output circuit is used to simultaneously receive a plurality of pixel circuits in the array of pixel circuits output signals of the pixel circuits, and output a signal mean value of the output signals of the plurality of pixel circuits.
  • the output circuit in the image sensor can simultaneously receive the output signals of a plurality of pixel circuits in the pixel circuit array, and output the signal average value of the output signals of the plurality of pixel circuits, so as to realize the realization of the output circuit in the output circuit.
  • Combining and averaging of the output signals of multiple pixel circuits For scenarios that require signal combining and averaging, the number of output circuits is greatly reduced, and the area and power consumption of the image sensor are reduced.
  • the image sensor further includes: a sampling circuit, configured to collect the mean value of the signal output by the output circuit.
  • each output circuit only needs one sampling circuit to collect the average value of its output signal, the number of sampling circuits in the image sensor is also reduced, which further reduces the area and power consumption of the image sensor.
  • the pixel circuit array is composed of multiple sub-arrays
  • the multiple pixel circuits include pixel circuits with the same number in the multiple sub-arrays
  • the pixel circuits with the same number in each sub-array are located in the same row and column within their respective corresponding subarrays.
  • the distribution of the multiple pixel circuits may be such that the multiple pixel circuits are located in the same row and column in the pixel circuit sub-array where they are located. , so that the multiple pixel circuits that need to perform signal combining and averaging at present can be selected by row scanning and column scanning.
  • the output circuit includes an operational amplifier
  • the operational amplifier includes a first input terminal and a second input terminal
  • the first output terminal of the plurality of pixel circuits is connected to the first output terminal of the operational amplifier.
  • An input terminal is connected
  • the second output terminals of the plurality of pixel circuits are connected to the second input terminal of the operational amplifier.
  • the operational amplifier further includes a plurality of groups of transistors connected to its output terminals, wherein each group of transistors includes a first transistor and a second transistor connected in series.
  • the number of the multiple groups of transistors is the same as the number of the multiple pixel circuits, the first transistor and the source of the pixel circuit have the same transconductance as the input transistor, and the second transistor is the same as the pixel circuit.
  • the gate switch tube of the circuit is the same gate switch tube, the source follower input tube and the gate switch tube are connected in series between the first output end and the second output end of the pixel circuit.
  • the operational amplifier further includes a current mirror, one end of the current mirror is connected to the source follower input tube of each pixel circuit, and the other end of the current mirror is connected to the first transistor in each group of transistors. A transistor is connected.
  • the operational amplifier further includes a current source, one end of the current source is connected to the gate switch of each pixel circuit, and is connected to the second transistor in each group of transistors, the The other end of the current source is grounded.
  • the operational amplifier further includes a current mirror, one end of the current mirror is connected to the gate switch of each pixel circuit, and the other end of the current mirror is connected to the first transistor in each group of transistors The two transistors are connected.
  • the operational amplifier further includes a current source, one end of the current source is connected to the source-following input transistor of each pixel circuit, and is connected to the first transistor in each group of transistors, the The other end of the current source is grounded.
  • the pixel circuit further includes a photodiode, a parasitic capacitor, a reset switch tube and a transfer tube.
  • the anode of the photodiode is grounded, the cathode of the photodiode is connected to the source of the transmission tube, the gate of the transmission tube is controlled by the transmission signal, and the drain of the transmission tube is connected to the parasitic capacitor one end, the source is connected with the gate of the input tube, and the source of the reset switch tube, the gate of the transmission tube is controlled by the transmission signal, the other end of the parasitic capacitor is grounded, the reset switch tube
  • the drain of the switch is connected to the reset voltage, the gate of the reset switch is controlled by the reset signal, the gate of the gate switch is controlled by the gate signal, the source follows the source of the input tube and the gate switch
  • the drains of the transistors are connected, and the source follows the drain of the input transistor and the source of the gate switch as the first output end and the second output end of the pixel circuit, respectively.
  • the sampling circuit includes a first sampling capacitor and a second sampling capacitor, and the first sampling capacitor and the second sampling capacitor are used for sampling twice before and after the pixel circuit is exposed. The signal is averaged to achieve correlated double sampling.
  • Using correlated double sampling can eliminate the interference of reset noise in the pixel circuit and improve the performance of the image sensor.
  • the image sensor is applied to a fingerprint detection device, wherein the optical signals received by the plurality of pixel circuits are optical signals in the same direction returned by the finger.
  • a fingerprint detection apparatus including: the image sensor in the foregoing first aspect and any possible implementation manner of the first aspect.
  • the fingerprint detection device further includes an optical path guiding structure disposed above each sub-array, the optical path guiding structure including a microlens and a plurality of optical path guiding structures disposed under the microlens
  • a light-blocking layer the uppermost light-blocking layer in the plurality of light-blocking layers is provided with at least one light-passing hole, and each light-blocking layer in the remaining light-blocking layers is provided with a plurality of light-passing holes, so as to form
  • the light guide channels in multiple directions are used for converging the optical signals returned by the finger above the display screen, and the light guide channels in the multiple directions are used for converging the optical signals in corresponding directions. lead to the corresponding pixel circuit.
  • an electronic device including: the aforementioned second aspect and the fingerprint detection apparatus in any possible implementation manner of the second aspect.
  • FIG. 1 is a schematic structural diagram of a conventional image sensor.
  • FIG. 2 is a schematic diagram of the working principle of the image sensor based on FIG. 1 .
  • FIG. 3 is a schematic diagram of an image sensor according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of the working principle of the image sensor based on FIG. 3 .
  • FIG. 5 is a schematic structural diagram of a possible pixel circuit according to an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a possible output circuit according to an embodiment of the present application.
  • FIG. 7 is a schematic diagram of a possible structure of the image sensor based on FIGS. 5 and 6 .
  • FIG. 8 is a schematic diagram of an optical path implementing multiple receiving directions according to an embodiment of the present application.
  • FIG. 9 is a schematic diagram of an optical path implementing multiple receiving directions according to an embodiment of the present application.
  • the image sensor in this embodiment of the present application can be applied to any scene that requires signal combining and averaging.
  • the image sensor can be applied to a fingerprint detection device to collect the signal returned by the finger to obtain the fingerprint of the finger image.
  • FIG. 1 is a schematic structural diagram of a conventional image sensor.
  • the image sensor shown in FIG. 1 includes a pixel circuit array 110, an output circuit 120, a sampling circuit 130, a row scan controller 140, a column scan controller 150, a multiplexer switch 160, and a Programmable Gain Amplifier (PGA) 170 and an analog-to-digital conversion circuit (Analog-to-Digital Converter, ADC) 180 and so on.
  • the gated pixel circuits in the pixel circuit array 110 convert the respective received optical signals into electrical signals, which are input to the output circuit 120 , and the electrical signals are read out by the output circuit 120 .
  • the output circuit 120 may have various forms including, but not limited to, a source follower of a conventional 4T pixel circuit structure.
  • the sampling circuit 130 can sample and hold the signal output by the output circuit 120, and perform correlated double sampling (Correlated Double Sampling, CDS), and then sequentially output to the PGA circuit 170 and the ADC circuit 180 under the control of the multiplexer switch. Operations such as amplification and analog-to-digital conversion are performed to obtain the final data.
  • CDS Correlated Double Sampling
  • FIG. 2 is a schematic diagram based on the working principle of the image sensor shown in FIG. 1 .
  • Row in Figure 2 represents a row
  • Col represents a column.
  • the output signal of the pixel circuit numbered 1 needs to be signal combined and averaged
  • the output signal of the pixel circuit numbered 2 needs to be signal combined and averaged
  • the output signal of the pixel circuit numbered 3 needs to be signal combined and averaged.
  • the output signal needs to be combined and averaged
  • the output signal of the pixel circuit numbered 4 needs to be combined and averaged.
  • Figure 2 shows four sub-arrays, namely: a sub-array consisting of four pixel circuits in the upper left corner, a sub-array consisting of four pixel circuits in the upper right corner, and a sub-array consisting of four pixel circuits in the lower left corner. array, and a sub-array consisting of four pixel circuits in the lower right corner.
  • the signal mean value corresponding to the output signals of the pixel circuits with the same number in every four sub-arrays can be used as the pixel data of one pixel point in an image collected by the image sensor 300 after subsequent processing, for example,
  • the signal average corresponding to the output signals of the four pixel circuits 1 can be used as the pixel data of the pixel circuit 1 after subsequent processing, and the signal average corresponding to the output signals of the four pixel circuits 2 can be used as the pixel data of the pixel circuit 2 after subsequent processing. data.
  • the output signal of the pixel circuit 1 in the i-th row and the j-th column is OUT1 ⁇ j>, and the output signal OUT1 ⁇ j> is The corresponding output circuit 120 reads out and obtains the signal B1 ⁇ j>, and the signal B1 ⁇ j> will be sampled and held by the corresponding sampling capacitor in the sampling circuit; the output of the pixel circuit 1 in the i+2th row and the jth column
  • the signal is OUT2 ⁇ j>, the output signal OUT2 ⁇ j> is read out through the corresponding output circuit 120, and the signal B2 ⁇ j> is obtained, and the signal B2 ⁇ j> will be sampled and held by the corresponding sampling capacitor in the sampling circuit ;
  • the output signal of the pixel circuit 1 of the i-th row and the j+2-th column is OUT1 ⁇ j+2>, the output signal OUT1 ⁇ j+2> is read out
  • V RST and V SIG are the signals collected twice before and after exposure, respectively.
  • V RST and V SIG are the signals collected twice before and after exposure, respectively.
  • the noise signal can be eliminated, and then the correlated double sampling signal is input to the PGA circuit 170 and the ADC circuit 180 Amplification and analog-to-digital conversion are performed to obtain the pixel data of the pixel circuit 1 .
  • the four pixel circuits 2 go through a similar process, and finally the corresponding V RST and V SIG of the pixel circuit 2 can be obtained. After correlated double sampling of these two signals, the input To the PGA circuit 170 and the ADC circuit 180 for amplification and analog-to-digital conversion to obtain the pixel data of the pixel circuit 2 .
  • multiple pixel circuits that need to combine and average signals are read out through multiple output circuits 120 respectively, then sampled and held through multiple sampling capacitors, and finally combined and averaged.
  • NxY output circuits 120 and NxY sampling circuits 130 are required. Therefore, a large number of output circuits 120 and sampling circuits 130 need to be provided in the image sensor, resulting in high area and power consumption of the image sensor.
  • the embodiments of the present application provide an image sensor with small area and power consumption.
  • FIG. 3 is a schematic diagram of an image sensor according to an embodiment of the present application.
  • the image sensor 300 includes a pixel circuit array 310 and an output circuit 320 .
  • the output circuit 320 may also be referred to as a readout circuit 320 or a readout circuit 320 .
  • each pixel circuit in the pixel circuit array 310 is used to generate an output signal according to the received optical signal.
  • the output circuit 320 is configured to simultaneously receive the output signals of the plurality of pixel circuits in the pixel circuit array 310, and output the signal average value of the output signals of the plurality of pixel circuits.
  • the output circuit 320 in the image sensor 300 can simultaneously receive the output signals of a plurality of pixel circuits in the pixel circuit array 310, and output the signal average value of the output signals of the plurality of pixel circuits, thereby realizing the output Combining and averaging the output signals of multiple pixel circuits is implemented in the circuit 320 .
  • the number of output circuits is greatly reduced, the area and power consumption of the image sensor are reduced, and the cost is reduced.
  • the image sensor 300 may further include a sampling circuit 330 for collecting the average value of the signal output by the output circuit 320 .
  • each output circuit only needs one sampling circuit to collect the average value of its output signal, the number of sampling circuits in the image sensor is also reduced, which further reduces the area and power consumption of the image sensor.
  • the image sensor 300 may further include a multiplexing switch 360 for gating the average value of the signal output by a certain channel in the multiple channels, so that the average value of the signals output by the multiple channels is sequentially Processing is performed by subsequent common processing circuits.
  • the image sensor 300 may further include a row scan controller 340 and a column scan controller 350 , which are respectively used to control the gates of rows and columns in the pixel circuit array 310 .
  • the image sensor 300 may further include a PGA circuit 370 for amplifying the received signal.
  • the image sensor 300 may further include an ADC circuit 370 for performing analog-to-digital conversion on the amplified signal.
  • the image sensor 300 may simultaneously perform signal combining and averaging on a plurality of pixel circuits at any position in the pixel circuit array 310 .
  • the pixel circuit array 310 is composed of a plurality of sub-arrays, and the plurality of pixel circuits include the The pixel circuits with the same number in the multiple sub-arrays are located in the same row and column in the respective sub-arrays.
  • the pixel circuits numbered 1 in each subarray are located in the first row and first column in the corresponding subarray, and the pixel circuits numbered 2 in each subarray are located in the first row and second column in the corresponding subarray, etc.
  • the multiple pixel circuits that currently need to combine and average signals can be conveniently gated through row scanning and column scanning, as shown in FIG. 2 and FIG. 4 , for example.
  • the output circuit 320 includes an operational amplifier, and the operational amplifier includes a first input terminal and a second input terminal.
  • the first output ends of the plurality of pixel circuits are connected to the first input end of the operational amplifier, and the second output ends of the plurality of pixel circuits are connected to the second input end of the operational amplifier.
  • the output signals of the plurality of pixel circuits are firstly read out through the plurality of output circuits 320 , and are sampled and held by the plurality of sampling circuits 330 respectively, and then the signals are combined and averaged.
  • the two outputs of the plurality of pixel circuits that need to be combined and averaged are used as the two inputs of the output circuit 320 respectively, so that the output signals of the plurality of pixel circuits are in the output circuit 320.
  • Combining and averaging is completed, the number of output circuits 320 and the number of sampling circuits 330 are greatly reduced, the area and power consumption of the image sensor are greatly reduced, and the cost is reduced.
  • FIG. 4 only shows four sub-arrays in the pixel circuit array 310 , and each sub-array includes 2 ⁇ 2 pixel circuits, numbered 1, 2, 3, and 4, respectively. Each sub-array may also include other numbers of pixel circuits, for example, each sub-array includes R ⁇ R pixel circuits, where R>1. What is shown in FIG. 4 is only an example, and should not limit the protection scope of the present application.
  • the sub-arrays included in the pixel circuit array 310 may also have other numbers.
  • the output signal of the pixel circuit numbered 1 in the four sub-arrays needs to be combined and averaged, and the output signal of the pixel circuit numbered 2 needs to be combined and averaged, and the output signal of the pixel circuit numbered 3 needs to be combined and averaged.
  • the output signal of the pixel circuit needs to be combined and averaged, and the output signal of the pixel circuit numbered 4 needs to be combined and averaged.
  • the signal mean value corresponding to the output signals of the pixel circuits with the same number in every four sub-arrays can be used as the pixel data of one pixel point in an image collected by the image sensor 300 .
  • the pixel circuit array 310 includes P ⁇ Q ⁇ M sub-arrays
  • an image collected by the image sensor 300 includes P ⁇ Q pixel points
  • the output signals of the M pixel circuits need to be combined and averaged.
  • the signal mean value corresponding to the output signals of the four pixel circuits 2 is used as the pixel circuit 2 pixel data.
  • the signal mean value corresponding to the output signal of the circuit 2 is used as the pixel data of the pixel circuit 2
  • the signal mean value corresponding to the output signals of the four pixel circuits 4 is used as the pixel data of the pixel circuit 4, and so on.
  • the pixel circuit 1 in the i-th row and the j-th column when the i-th row and the i+2-th row are gated, the pixel circuit 1 in the i-th row and the j-th column, the pixel circuit 1 in the i+2-th row and the j-th column, and the i-th pixel circuit 1 in the i-th row and the j-th column.
  • the pixel circuit 1 in the row j+2th column and the pixel circuit 1 in the i+2th row and the j+2th column are both enabled.
  • the output signals OUTN of the four pixel circuits 1 are input to the same input terminal of the corresponding output circuit 320 , and the output signals OUTP of the four pixel circuits 1 are input to the other input terminal of the corresponding output circuit 320 . That is to say, OUTN ⁇ j> output by the pixel circuit 1 of the i-th row and the j-th column and the pixel circuit 1 of the i+2-th row and the j-th column, and the i-th row and the j+2-th column and the i+2-th row and the i+2-th row.
  • the pixel circuit 1 output OUTN ⁇ j+2> of the j+2 column is input to the same input terminal of the corresponding output circuit 320 .
  • the pixel circuit 1 output of the column OUTP ⁇ j+2> is input to the other input terminal of the output circuit 320 .
  • the output circuit 320 receives the output signals OUTN and OUTP of the four pixel circuits 1 , and outputs OUT1 , where OUT1 is the combined and averaged output signals of the four pixel circuits 1 .
  • the signal OUT1 is sampled and held by the corresponding sampling circuit 330, and finally the combined and averaged data are output, which are respectively denoted as V RST and V SIG .
  • V RST and V SIG are the signals collected twice before and after exposure, respectively. After correlated double sampling of these two signals, a certain noise signal can be eliminated, and then the correlated double sampling signal is input to the PGA circuit 370 and ADC.
  • the circuit 380 performs amplification and analog-to-digital conversion to obtain pixel data of the pixel circuit 1 .
  • the pixel circuit 2 at the i-th row and the i+2-th row are gated, the pixel circuit 2 at the i-th row and the j+1-th column, the pixel circuit 1 at the i+2-th row and the j+1-th column, and the i-th row and the j+3-th column
  • the pixel circuit 1 of , and the pixel circuit 2 of the i+2th row and the j+3th column are both enabled.
  • the four pixel circuits 2 go through a similar process, and finally the pixel circuit 2 corresponding to V RST and V SIG can also be obtained.
  • the two signals are input to the PGA circuit 170 and the ADC circuit 180 for amplification and analog-to-digital. Conversion, the pixel data of the pixel circuit 2 is obtained.
  • the embodiments of the present application do not limit the structure of each pixel circuit in the pixel circuit array 310 .
  • the pixel circuit further includes a photodiode, a parasitic capacitor, a reset switch transistor and a transfer transistor.
  • the anode of the photodiode is grounded, the cathode of the photodiode is connected to the source of the transmission tube, the gate of the transmission tube is controlled by the transmission signal, the drain of the transmission tube is connected to one end of the parasitic capacitor, and the source follows
  • the gate of the input tube is connected to the source of the reset switch tube, the other end of the parasitic capacitor is grounded, the drain of the reset switch tube is connected to the reset voltage, the gate of the reset switch tube is controlled by the reset signal, the gate
  • the gate of the switch tube is controlled by the gating signal, the source of the source follows the input tube and the drain of the gating switch tube is connected, the drain end of the source following the input tube and the source end of the gating switch tube are respectively as the first output terminal and the second output terminal of the pixel circuit.
  • a pixel circuit includes a photodiode (PD), a parasitic capacitor C FD , a transfer transistor M1 , a reset switch M2 , a source follower input transistor M3 and a gate switch M4 .
  • the reset switch M2 is used to reset the photodiode PD.
  • the gate switch M4 When the gate switch M4 is turned on, it indicates that the pixel circuit is currently gated for signal combining and averaging.
  • the anode of the photodiode PD is grounded, the cathode of the photodiode PD is connected to the source of the transmission tube M1, the gate of the transmission tube M1 is controlled by the transmission signal TX, and the drain of the transmission tube M1 is connected to one end and the source of the parasitic capacitor CFD respectively.
  • the gate of the input tube M3 and the source of the reset switch tube M2 are connected, the other end of the parasitic capacitor C FD is grounded, the drain of the reset switch tube is connected to the reset voltage V RST , and the gate of the reset switch tube is controlled by the reset signal RST,
  • the source of the source follower input tube M3 is connected to the drain of the gate switch M4, the drain of the follower input tube M3 is connected to the power supply voltage VCCP, and the gate of the gate switch M4 is controlled by the gate signal RSEL.
  • the pixel circuit shown in FIG. 5 is only an example, and the embodiments of the present application may also adopt pixel circuits of other structures, including but not limited to a 4T pixel structure.
  • This embodiment of the present application also does not limit the structure of the output circuit 320 .
  • the operational amplifier in the output circuit 320 further includes multiple groups of transistors connected to its output terminals.
  • each group of transistors includes a first transistor and a second transistor connected in series.
  • the number of transistors in the plurality of groups is the same as the number of the plurality of pixel circuits that need to perform signal combining and averaging.
  • the transconductance of the first transistor and the source-following input transistor of the pixel circuit are the same, or in other words, the first transistor and the source-following-input transistor of the pixel circuit are the same transistor.
  • the second transistor is the same gate switch tube as the gate switch tube of the pixel circuit.
  • the first transistor, the source follower input transistor, the second transistor, and the gate switch transistor may all be the same transistor.
  • the operational amplifier further includes a current mirror, one end of the current mirror is connected to the source follower input transistor of each pixel circuit, and the other end of the current mirror is connected to the first transistor in each group of transistors .
  • the operational amplifier further includes a current source, one end of the current source is connected to the gate switch of each pixel circuit, and is connected to the second transistor in each group of transistors, and the other end of the current source is connected ground.
  • the operational amplifier further includes a current mirror, one end of the current mirror is connected to the gate switch of each pixel circuit, and the other end of the current mirror is connected to the second transistor in each group of transistors. transistors are connected.
  • the operational amplifier further includes a current source, one end of the current source is connected to the source follower input tube of each pixel circuit, and is connected to the first transistor in each group of transistors, and the other end of the current source is connected ground.
  • the output circuit 320 shown in FIG. 6 includes an operational amplifier 321 .
  • FD ⁇ 1> to FD ⁇ N> are the gate voltages of the source follower input transistor M3 of the pixel circuit that need to perform signal combining and averaging, respectively.
  • POUT such as OUT1 in FIG. 4 , is the output signal of the output terminal of the output circuit 320 .
  • the output terminal is connected to N groups of transistors 3212, and the N groups of transistors 3212 are connected in parallel, wherein each group of transistors 3212 includes a transistor M5 and a transistor M6 connected in series. Specifically, the output terminal may be connected to the gate of the transistor M5 in each group of transistors 3212 .
  • the transconductance of the transistor M5 in the output circuit 320 is the same as the transconductance of the transistor M3, or in other words, the transistor M5 in the output circuit 320 and the transistor M3 in the pixel circuit are the same transistor.
  • the transistor M6 and the transistor M4 are the same gate switch. Since the output circuit 320 performs signal combining and averaging, the transistors M6 and M4 are both turned on as switches. In the following, for ease of understanding, the transistors M6 and M4 may be regarded as wires.
  • VCM the common mode signal
  • ⁇ V ⁇ k> the small signal
  • I1 I(CM)+gm(1) ⁇ V(1)+gm(2) ⁇ V(2)+ whilgm(k) ⁇ V(k)+ whil+gm(N) ⁇ ⁇ V(N).
  • I1 I(CM)+gm ⁇ V(1)+gm ⁇ V(2)+...gm ⁇ V(k)+...+gm ⁇ V(N).
  • the output POUT of the output circuit 320 is:
  • the output circuit 320 adopts the operational amplifier 321 based on the summation of multi-input transconductance currents, and realizes the corresponding operation of FD ⁇ 1>, FD ⁇ 2>, ..., FD ⁇ k>, ..., FD ⁇ N> Combining and averaging of output signals.
  • the operational amplifier 321 of the output circuit 320 in FIG. 6 adopts the basic structure of a five-tube operational amplifier, and since the input end of the operational amplifier 321 is connected to N pixel circuits that need to combine and average signals, the operational amplifier The output terminals of the N pixel circuits are connected to the same N transistors M5 and N transistors M6 as the source follower input M3 and the gate switch M4 in the N pixel circuits, thereby realizing the combination and summation of the output signals of the N pixel circuits. average.
  • the positions of the source-following input M3 and the strobe switch M4 shown in FIG. 6 can be exchanged, and the positions of the transistor M5 and the transistor M6 are exchanged at the same time.
  • output circuit shown in FIG. 6 is only an example, and the embodiments of the present application may also adopt output circuits of other structures, including but not limited to five-tube operational amplifiers.
  • the output signals OUTP and OUTN of the four pixel circuits 1 are respectively input to the two input terminals of the output circuit 320, and the output circuit 320 receives multiple After the output signals OUTP and OUTN of the pixel circuits, a combined and averaged signal POUT is output.
  • the sampling circuit 330 includes a first sampling capacitor and a second sampling capacitor, and the first sampling capacitor and the second sampling capacitor are used to respectively collect the signal twice before and after the pixel circuit is exposed. mean to achieve correlated double sampling.
  • the sampling circuit 330 is connected to the output circuit 320, wherein the first sampling capacitor C1 is connected to the output end of the output circuit 320 through the switch K1, and the second sampling capacitor C2 is connected to the output end of the output circuit 320 through the switch K2 .
  • the switch K1 and the switch K2 can be controlled so that the average value of the signal is collected twice through the first sampling capacitor C1 and the second sampling capacitor C2 before and after the exposure of the pixel circuit, the former is the sampling of the reset level V RST , and the latter is the For the sampling of the exposure signal level V SIG , the reset noise can be eliminated after the difference of the two collected signals, thus improving the performance of the image sensor.
  • An embodiment of the present application further provides a fingerprint detection device, where the fingerprint detection device includes the image sensor in the above-mentioned various embodiments of the present application.
  • the fingerprint detection device can be arranged below the display screen to realize fingerprint detection under the screen.
  • the light signals received by the plurality of pixel circuits that need to perform signal combining and averaging may be, for example, light signals returning from the finger in the same direction.
  • the plurality of pixel circuits in each sub-array of the plurality of pixel circuit arrays are respectively configured to receive light signals in multiple directions.
  • the structure of the fingerprint detection device may, for example, use a microlens and one or more light blocking layers to receive light signals in different directions.
  • the fingerprint detection device further includes an optical path guiding structure disposed above each sub-array, the optical path guiding structure including a microlens and a plurality of light blocking structures disposed below the microlens layer, wherein the uppermost light-blocking layer in the plurality of light-blocking layers is provided with at least one light-passing hole, and each light-blocking layer in the remaining light-blocking layers is provided with a plurality of light-passing holes, so as to form the multiple light-blocking layers.
  • the light guide channels in each direction are used for condensing the light signals returned by the finger above the display screen, and the light guide channels in multiple directions are used for guiding the light signals in the corresponding directions to the corresponding pixel circuits.
  • the pixel circuits with the same number can be used to receive light in the same direction, and the aforementioned pixel circuit 1, pixel circuit 2, pixel circuit 3 and pixel circuit 4 can be used to receive four different directions respectively.
  • 8 is a cross-sectional view of the light path guiding structure above the three sub-arrays in the pixel circuit array 310
  • FIG. 9 is a top view of the light path guiding structure above the four sub-arrays in the pixel circuit array 310 .
  • the pixel circuit array 310 of the image sensor 300 are three light-blocking layers and one microlens layer, the uppermost light-blocking layer is provided with a light-passing hole, and each of the remaining light-blocking layers is provided with Four light-passing holes are formed to form four light-guiding channels in different directions, and the light signals condensed by the microlens pass through the four light-guiding channels and reach the four pixel circuits respectively.
  • the microlens array 210 includes a plurality of microlenses 211 , each microlens corresponds to one pixel unit, and each pixel unit includes 4 pixels.
  • the opening 2211 on the light blocking layer 211, the opening 2221 on the light blocking layer 222, and the opening 2231 on the light blocking layer 223 form a light receiving direction, and the light signal in this direction can be received by the pixel circuit 331; light blocking
  • the openings 2211 on the layer 211, the openings 2222 on the light blocking layer 222, and the openings 2232 on the light blocking layer 223 form another light receiving direction, and the light signal in this direction can be received by the pixel circuit 332; similarly, Fig.
  • the top view of 9 shows 4 light receiving directions.
  • FIG. 8 and FIG. 9 are only examples, and other optical path structures capable of realizing multiple receiving directions can also be applied to the fingerprint detection device.
  • one microlens may also be provided for each pixel circuit, that is, one microlens corresponds to one pixel circuit.
  • the above only takes light rays in four directions as an example.
  • the pixel circuits included in one sub-array in the pixel circuit array are 2 ⁇ 2 pixel circuits with different numbers.
  • other numbers of light directions can also be used, for example, a sub-array includes two pixel circuits with different numbers, which are respectively used to receive light in two different directions.
  • An embodiment of the present application further provides an electronic device, the electronic device includes a screen and the fingerprint detection device in the above-mentioned various embodiments of the present application.
  • the fingerprint detection device is arranged below the screen to realize optical fingerprint detection under the screen.
  • the electronic device in the embodiments of the present application may be a portable or mobile computing device such as a terminal device, a mobile phone, a tablet computer, a notebook computer, a desktop computer, a game device, a vehicle-mounted electronic device, or a wearable smart device, and Electronic databases, automobiles, bank ATMs (Automated Teller Machine, ATM) and other electronic devices.
  • the wearable smart device includes full-featured, large-sized devices that can achieve complete or partial functions without relying on smart phones, such as smart watches or smart glasses; Devices used in conjunction with mobile phones, such as various types of smart bracelets and smart jewelry that monitor physical signs.

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Vascular Medicine (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
PCT/CN2020/110604 2020-08-21 2020-08-21 图像传感器、指纹检测装置和电子设备 WO2022036713A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/CN2020/110604 WO2022036713A1 (zh) 2020-08-21 2020-08-21 图像传感器、指纹检测装置和电子设备
EP20926391.2A EP3985555B1 (de) 2020-08-21 2020-08-21 Bildsensor, fingerabdruckerkennungseinrichtung und elektronische vorrichtung
KR1020217031868A KR102701567B1 (ko) 2020-08-21 2020-08-21 이미지 센서, 지문 검출 장치 및 전자 장치
US17/505,001 US11837013B2 (en) 2020-08-21 2021-10-19 Image sensor, fingerprint detection apparatus and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/110604 WO2022036713A1 (zh) 2020-08-21 2020-08-21 图像传感器、指纹检测装置和电子设备

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/505,001 Continuation US11837013B2 (en) 2020-08-21 2021-10-19 Image sensor, fingerprint detection apparatus and electronic device

Publications (1)

Publication Number Publication Date
WO2022036713A1 true WO2022036713A1 (zh) 2022-02-24

Family

ID=80269627

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/110604 WO2022036713A1 (zh) 2020-08-21 2020-08-21 图像传感器、指纹检测装置和电子设备

Country Status (4)

Country Link
US (1) US11837013B2 (de)
EP (1) EP3985555B1 (de)
KR (1) KR102701567B1 (de)
WO (1) WO2022036713A1 (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040109074A1 (en) * 2002-12-05 2004-06-10 Jung Duck Young Image sensor and optical pointing system using the same
CN109496427A (zh) * 2018-10-25 2019-03-19 深圳市汇顶科技股份有限公司 一种影像传感器及其感测方法
CN111133445A (zh) * 2019-08-23 2020-05-08 深圳市汇顶科技股份有限公司 指纹识别装置和电子设备
CN111464765A (zh) * 2020-04-15 2020-07-28 锐芯微电子股份有限公司 全差分像素读出电路、像素电路以及像素数据读出方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030183829A1 (en) 2002-03-27 2003-10-02 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device and camera
KR100994993B1 (ko) * 2004-03-16 2010-11-18 삼성전자주식회사 서브 샘플링된 아날로그 신호를 평균화하여 디지털 변환한영상신호를 출력하는 고체 촬상 소자 및 그 구동 방법
JP4935486B2 (ja) 2007-04-23 2012-05-23 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、固体撮像装置の信号処理方法および撮像装置
TWI399088B (zh) 2007-10-12 2013-06-11 Sony Corp 資料處理器，固態成像裝置，成像裝置，及電子設備
JP4403435B2 (ja) 2007-11-16 2010-01-27 ソニー株式会社 固体撮像装置、駆動制御方法、および撮像装置
JP5151507B2 (ja) * 2008-01-29 2013-02-27 ソニー株式会社 固体撮像素子、固体撮像素子の信号読み出し方法および撮像装置
JP5475482B2 (ja) 2010-01-26 2014-04-16 キヤノン株式会社 撮像素子及び撮像装置
GB2479594A (en) 2010-04-16 2011-10-19 St Microelectronics A sample and hold circuit with internal averaging of samples
GB2486428A (en) 2010-12-14 2012-06-20 St Microelectronics Res & Dev Image sensor utilising analogue binning with ADC architecture
JP5887827B2 (ja) 2011-10-20 2016-03-16 ソニー株式会社 固体撮像素子およびカメラシステム
CN107911633B (zh) 2011-12-27 2021-05-14 株式会社尼康 固体成像元件及摄像装置
US8896693B2 (en) * 2012-02-14 2014-11-25 Cmos Sensor Inc. System and method for monitoring multiple targets using a single camera
CN103780850B (zh) 2014-01-30 2017-12-15 上海集成电路研发中心有限公司 像素分裂与合并图像传感器及其信号传输方法
JP2016005161A (ja) 2014-06-18 2016-01-12 キヤノン株式会社 撮像装置及びその駆動方法
JP6369233B2 (ja) 2014-09-01 2018-08-08 ソニー株式会社 固体撮像素子及びその信号処理方法、並びに電子機器
JP6740905B2 (ja) 2015-02-12 2020-08-19 ソニー株式会社 撮像装置およびその制御方法
CN105516625B (zh) 2016-01-13 2018-10-19 中国科学院上海技术物理研究所 Cmos图像传感器像元合并读出电路结构及信号处理读出方法
CN107526993A (zh) * 2016-06-20 2017-12-29 康达生命科学有限公司 电容式指纹传感器
JP2018007035A (ja) * 2016-07-01 2018-01-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP6887856B2 (ja) * 2017-04-11 2021-06-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
KR102400840B1 (ko) * 2017-10-13 2022-05-24 삼성전자주식회사 디스플레이를 광원으로 이용하여 생체 정보를 획득하기 위한 방법 및 그 전자 장치
US10679034B2 (en) 2018-06-08 2020-06-09 Synaptics Incorporated Short latency fingerprint sensing
CN109257548B (zh) 2018-08-10 2021-01-29 上海集成电路研发中心有限公司 一种cmos图像传感器及图像输出方法
KR102538220B1 (ko) 2018-10-02 2023-06-01 삼성전자주식회사 이미지 센싱 시스템 및 이의 동작 방법
US10755065B2 (en) 2018-12-03 2020-08-25 Novatek Microelectronics Corp. Sensor device and flicker noise mitigating method
EP3979123B1 (de) 2019-08-02 2023-11-29 Shenzhen Goodix Technology Co., Ltd. Fingerabdruckdetektor und elektronische vorrichtung
CN111328398B (zh) 2019-08-23 2021-09-17 深圳市汇顶科技股份有限公司 指纹识别装置和电子设备
CN110720212B (zh) 2019-09-02 2022-03-22 深圳市汇顶科技股份有限公司 用于像素阵列的信号处理电路和方法以及图像传感器
US11600095B2 (en) * 2019-10-25 2023-03-07 Visera Technologies Company Limited Optical fingerprint sensors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040109074A1 (en) * 2002-12-05 2004-06-10 Jung Duck Young Image sensor and optical pointing system using the same
CN109496427A (zh) * 2018-10-25 2019-03-19 深圳市汇顶科技股份有限公司 一种影像传感器及其感测方法
CN111133445A (zh) * 2019-08-23 2020-05-08 深圳市汇顶科技股份有限公司 指纹识别装置和电子设备
CN111464765A (zh) * 2020-04-15 2020-07-28 锐芯微电子股份有限公司 全差分像素读出电路、像素电路以及像素数据读出方法

Also Published As

Publication number Publication date
EP3985555B1 (de) 2023-10-11
KR20220023821A (ko) 2022-03-02
US11837013B2 (en) 2023-12-05
EP3985555A1 (de) 2022-04-20
KR102701567B1 (ko) 2024-08-30
US20220058364A1 (en) 2022-02-24
EP3985555A4 (de) 2022-06-01

Similar Documents

Publication Publication Date Title
US20200236319A1 (en) Imaging element, imaging method and electronic apparatus
US8836833B2 (en) Solid-state imaging apparatus having pixels with plural semiconductor regions
CN112714268B (zh) 图像传感器、指纹检测装置和电子设备
US9113103B2 (en) Solid-state imaging apparatus and imaging system
US8687246B2 (en) Solid-state imaging apparatus and imaging system
CN109257548B (zh) 一种cmos图像传感器及图像输出方法
JPS5850030B2 (ja) 光電変換装置およびそれを用いた固体撮像板
US7910965B2 (en) Image sensor circuits including shared floating diffusion regions
US10057518B2 (en) Imaging device and image acquisition device
JP6814860B2 (ja) 画像検出器の２列のピクセルのプール
KR102398375B1 (ko) 고체 촬상 장치
US20220102401A1 (en) Image sensing device
US20190296087A1 (en) Semiconductor device
KR20110051859A (ko) 이미지 센서 및 그 동작 방법
US20190037154A1 (en) Imaging device, pixel and manufacturing method thereof
US11539905B2 (en) Image sensing device including conversion gain capacitor
US10573682B2 (en) Pixel array included in image sensor and image sensor including the same
CN104980669A (zh) 具有一致性的图像传感器优化像素结构
WO2024046196A1 (zh) 图像传感器及电子设备
US11233962B2 (en) Image sensor and pixel array which operate based on a clamp voltage and a selection voltage, and operation method of the image sensor
WO2022036713A1 (zh) 图像传感器、指纹检测装置和电子设备
WO2021068397A1 (zh) Cmos结构、图像传感器及手持装置
US20230137218A1 (en) Pixel circuit, control method, and image sensor
US11303837B2 (en) Readout circuit, image sensor, and electronic device
CN109726704B (zh) 屏幕信号采集装置及方法

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2020926391

Country of ref document: EP

Effective date: 20211001

NENP Non-entry into the national phase

Ref country code: DE