WO2022033323A1 - 焊带和具有其的光伏组件及焊带的加工方法 - Google Patents

焊带和具有其的光伏组件及焊带的加工方法 Download PDF

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Publication number
WO2022033323A1
WO2022033323A1 PCT/CN2021/109339 CN2021109339W WO2022033323A1 WO 2022033323 A1 WO2022033323 A1 WO 2022033323A1 CN 2021109339 W CN2021109339 W CN 2021109339W WO 2022033323 A1 WO2022033323 A1 WO 2022033323A1
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Prior art keywords
ribbon
welding
solder layer
welding strip
content
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PCT/CN2021/109339
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English (en)
French (fr)
Inventor
邓士锋
夏正月
许涛
Original Assignee
苏州阿特斯阳光电力科技有限公司
阿特斯阳光电力集团股份有限公司
常熟阿特斯阳光电力科技有限公司
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Priority claimed from CN202010797859.5A external-priority patent/CN114068749A/zh
Priority claimed from CN202010797861.2A external-priority patent/CN114074237A/zh
Application filed by 苏州阿特斯阳光电力科技有限公司, 阿特斯阳光电力集团股份有限公司, 常熟阿特斯阳光电力科技有限公司 filed Critical 苏州阿特斯阳光电力科技有限公司
Publication of WO2022033323A1 publication Critical patent/WO2022033323A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/40—Making wire or rods for soldering or welding
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
    • C23C2/08—Tin or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the technical field of welding ribbon manufacturing, and in particular, to a welding ribbon, a photovoltaic module having the same, and a processing method for the welding ribbon.
  • Soldering ribbon is one of the main accessories of photovoltaic modules, which plays the role of connecting cells and conducting electricity.
  • the conductivity, solderability and elongation of the soldering ribbon play a crucial role in the quality of photovoltaic modules.
  • the melting point of the welding ribbon is relatively high, so that the welding temperature of the welding ribbon is relatively high, so that the defective rate of the battery cell is relatively high, and there is a virtual welding spot.
  • an object of the present disclosure is to provide a welding ribbon, the melting point of the welding ribbon is low, the welding temperature of the welding ribbon can be lowered, and the yield rate of the battery slices can be improved.
  • Another object of the present disclosure is to provide a photovoltaic module with the above-mentioned welding tape.
  • Another object of the present disclosure is to provide a method for processing the above-mentioned welding strip.
  • a photovoltaic module includes: a conductive base; a solder layer covering at least a part of the conductive base, the solder layer is composed of Sn, Bi and Pb; or the solder layer It is composed of Sn, Bi, Pb, and at least one of Ga, Ge, In, Sb and lanthanide elements; wherein, the content of the Bi is 8%-20%, and the content of the Sn is 40%-65% %, the content of the Pb is 25% to 40%, and the sum of the content of at least one of the Ga, the Ge, the In, the Sb and the lanthanide is less than or equal to 5% .
  • solder tape of the embodiment of the present disclosure by making the solder layer composed of Sn, Bi, and Pb or composed of Sn, Bi, Pb, and at least one of Ga, Ge, In, Sb, and lanthanides, and making Bi
  • the content of tin is 8% to 40% and the sum of the content of at least one of Ga, Ge, In, Sb and lanthanide is less than or equal to 5%, which can reduce the melting point of the solder layer, thereby reducing the welding temperature of the ribbon. , to improve the yield of the cell.
  • the content of Sn is 50%-53%.
  • the content of Sn is 53%.
  • the sum of the content of at least one of the Ga, the Ge, the In, the Sb, and the lanthanide is less than or equal to 1%.
  • the solder layer is composed of Sn, Bi, Pb, Ga, In, and lanthanides.
  • the melting point temperature of the solder layer is T, wherein the T satisfies: 125°C ⁇ T ⁇ 170°C.
  • the ribbon is a ribbon with a circular cross-sectional shape, a ribbon with a triangular cross-sectional shape, a ribbon with a rectangular cross-sectional shape, or a ribbon with a triangular cross-sectional shape and a combination of ribbons with a rectangular cross-sectional shape.
  • the cross-sectional shape of the solder ribbon is circular
  • the diameter of the solder ribbon is d
  • the thickness of the solder layer is t 1
  • d and t 1 satisfy the requirements respectively : 0.15mm ⁇ d ⁇ 0.4mm, 10 ⁇ m ⁇ t 1 ⁇ 20 ⁇ m.
  • the length of the bottom side of the solder ribbon is L
  • the thickness of the solder layer is t 2
  • the L and t 2 are respectively Satisfaction: 0.35mm ⁇ L ⁇ 0.45mm, 10 ⁇ m ⁇ t 2 ⁇ 40 ⁇ m.
  • the width of the solder ribbon is w
  • the thickness of the solder layer is t 3
  • w and t 3 respectively satisfy: 0.7mm ⁇ w ⁇ 0.9mm, 10 ⁇ m ⁇ t 3 ⁇ 40 ⁇ m.
  • the conductive substrate is a copper substrate, a copper-aluminum alloy substrate, a copper-silver alloy substrate, or a copper-silver aluminum alloy substrate.
  • a photovoltaic module according to an embodiment of the second aspect of the present disclosure includes the solder ribbon according to the above-described embodiment of the first aspect of the present disclosure.
  • the method includes the following steps: drawing and shaping the filamentary conductive substrate for many times to obtain the conductive substrate with regular shape; A soft conductive base is obtained; after cooling, the soft conductive base is plated with a solder layer on its surface, so as to obtain the welding tape.
  • the method before heat-treating the regular-shaped conductive base, the method further includes: extruding the regular-shaped conductive base to obtain a rectangular conductive base; or extruding the regular-shaped conductive base with a triangular cross-sectional shape The extrusion and non-extrusion are performed alternately to obtain a special-shaped conductive base, which is a combination of a conductive base with a triangular cross-sectional shape and a conductive base with a rectangular cross-sectional shape.
  • the solder layer plated on the surface is obtained by using a hot dip process or an electroplating process.
  • FIG. 1 is a schematic cross-sectional view of a welding ribbon according to an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional view of a welding ribbon according to another embodiment of the present disclosure.
  • FIG. 3 is a schematic cross-sectional view of a welding ribbon according to yet another embodiment of the present disclosure.
  • FIG. 4 is a schematic cross-sectional view of a welding ribbon according to yet another embodiment of the present disclosure.
  • FIG. 6 is another schematic diagram of different contents of Bi and the melting point temperature of the solder layer according to an embodiment of the present disclosure
  • FIG. 7 is a schematic flowchart of a method for processing a welding ribbon according to an embodiment of the present disclosure
  • FIG. 8 is a schematic flowchart of a method for processing a solder layer according to an embodiment of the present disclosure
  • FIG. 9 is a schematic flowchart of a method for processing a solder layer according to another embodiment of the present disclosure.
  • 600 tinned module
  • 700 wire take-up module.
  • Ribbon 100 can be applied to photovoltaic modules (not shown) such as heterojunctions (a special kind of PN junction formed by sequentially depositing more than two layers of different semiconductor materials on the same base, these materials having different and these materials can be compounds such as gallium arsenide or semiconductor alloys such as silicon-germanium) components.
  • photovoltaic modules not shown
  • heterojunctions a special kind of PN junction formed by sequentially depositing more than two layers of different semiconductor materials on the same base, these materials having different and these materials can be compounds such as gallium arsenide or semiconductor alloys such as silicon-germanium
  • soldering ribbon 100 belongs to a kind of interconnection structure, and for the convenience of description, the present disclosure only describes in detail the interconnection structure applied to the photovoltaic module, that is, the soldering ribbon. Those skilled in the art will understand that the following structures and characteristics for the solder ribbon 100 can be applied to other interconnecting structures, and are not limited to application to the solder ribbon.
  • the solder ribbon 100 includes a conductive base 1 and a solder layer 2 , and the solder layer 2 covers at least a part of the conductive base 1 .
  • the conductive substrate 1 may be a copper substrate, a copper-aluminum alloy substrate, a copper-silver alloy substrate, or a copper-silver aluminum alloy substrate or the like. But not limited to this.
  • the melting point of the solder layer 2 can be lower than the melting point of the conductive substrate 1. After the solder layer 2 is melted, it has a certain fluidity. The liquid solder layer 2 fills the gap between the solder ribbon 100 and the cell, so as to realize the connection between the solder ribbon 100 and the photovoltaic module. connection between the battery slices.
  • the solder layer 2 may be composed of Sn (tin, a metallic element, a metallic element with silvery white luster), Bi (bismuth, the first element of the periodic table of elements) It is composed of six period VA group 83 elements) and Pb (lead, a metal chemical element with atomic number 82 and atomic weight 207.2, which is the non-radioactive element with the largest atomic weight).
  • Sn has a low melting point, soft texture, and ductility, and plays an important role in the welding between the welding tape 100 and the cells of the photovoltaic module.
  • the Bi element can reduce the melting point temperature of the solder layer 2 , thereby reducing the welding temperature of the solder ribbon 100 , improving the yield of the cell, and avoiding false soldering. And pollution-free, environmentally friendly.
  • the solder layer 2 may also be composed of Sn, Bi, Pb and at least one of Ga, Ge, In, Sb and lanthanides. That is, the solder layer 2 may be composed of Sn, Bi, Pb, and one or more of Ga, Ge, In, Sb, and lanthanides.
  • the solder layer 2 when the solder layer 2 is composed of Sn, Bi, Pb, and one of Ga, Ge, In, Sb, and lanthanides, the solder layer 2 may be composed of Sn, Bi, Pb, and Ga; alternatively, the solder layer 2 may be composed of Sn, Bi, Pb, and Ga; Composed of Sn, Bi, Pb and Ge; or, the solder layer 2 can be composed of Sn, Bi, Pb and In; alternatively, the solder layer 2 can be composed of Sn, Bi, Pb and Sb; Or, the solder layer 2 can be It is composed of one of the lanthanides and Sn, Bi and Pb.
  • the solder layer 2 When the solder layer 2 is composed of Sn, Bi, Pb and a plurality of Ga, Ge, In, Sb and lanthanide elements, the solder layer 2 includes Ga, Ge, In, Various of Sb and lanthanides.
  • “plurality” means two or more than two. It should be noted that “multiple kinds of Ga, Ge, In, Sb and lanthanide elements” can be only a plurality of Ga, Ge, In, Sb; it can also be only a plurality of lanthanide elements; of course , and may also include at least one of Ga, Ge, In, and Sb, and at least one of lanthanides.
  • the melting point of the solder layer 2 can be further lowered, and the wettability of the solder layer 2 on the surface of the conductive substrate 1 can be increased, The oxidation of Bi is reduced, and the low temperature brittleness of the ribbon 100 can be reduced.
  • the lanthanide elements (rare earth elements, alias rare earth elements, represented by REE) refer to the collective name of 15 elements from the 57th element lanthanum to the 71st element lutetium in the periodic table, specifically including lanthanum, cerium , praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium.
  • the content of Bi is 8% to 40% (inclusive)
  • the content of Sn is 40% to 65% (inclusive)
  • the content of Pb is 25% to 40% (including the endpoint value)
  • the sum of the content of at least one of Ga, Ge, In, Sb and lanthanoids is less than or equal to 5%.
  • the solder layer 2 includes one of Ga, Ge, In, Sb and lanthanides, the content of the above one of Ga, Ge, In, Sb and lanthanides is less than or equal to 5 %; when the solder layer 2 includes a plurality of Ga, Ge, In, Sb and lanthanides, the sum of the content of the above-mentioned various Ga, Ge, In, Sb and lanthanides is less than or equal to 5%.
  • the content of Sn can be fixed, and the content of Bi is different, the melting point temperature of the solder layer 2 is different, and the relationship between the content of Bi and the melting point temperature of the solder layer 2 As shown in Table 1.
  • the Pb content decreases by 1%, and the melting point temperature can be lowered by about 2°C.
  • the melting point temperature of the solder ribbon 100 can be further lowered.
  • the content of Bi cannot be too high.
  • the reliability risk is greater, and the solder ribbon 100 is brittle and easily oxidized.
  • the melting point of the solder layer 2 can be lowered, and the low-temperature brittleness can be lowered to prevent oxidation.
  • the solder layer 2 may be composed of Sn and Bi.
  • Sn and Bi elements and the advantages they bring to the solder layer 2 are the same as the above-mentioned characteristics and advantages, and will not be repeated here.
  • the solder layer 2 may also be composed of Sn, Bi, and at least one of Ga, Ge, In, Sb, and lanthanides. That is, the solder layer 2 may be composed of Sn, Bi, and one or more of Ga, Ge, In, Sb, and lanthanides.
  • the solder layer 2 when the solder layer 2 is composed of Sn, Bi and one of Ga, Ge, In, Sb and lanthanides, the solder layer 2 may be composed of Sn, Bi and Ga; or, the solder layer 2 may be composed of Sn, Bi and Ge; alternatively, the solder layer 2 may be composed of Sn, Bi and In; alternatively, the solder layer 2 may be composed of Sn, Bi and Sb; alternatively, the solder layer 2 may be composed of one of the lanthanides and It is composed of Sn and Bi.
  • the solder layer 2 When the solder layer 2 is composed of Sn, Bi and a plurality of Ga, Ge, In, Sb and lanthanides, the solder layer 2 includes Ga, Ge, In, Sb and lanthanides in addition to Sn and Bi variety of elements.
  • “multiple of Ga, Ge, In, Sb and lanthanides” can be only a plurality of Ga, Ge, In, Sb; it can also be only a plurality of lanthanides; of course , and may also include at least one of Ga, Ge, In, and Sb, and at least one of lanthanides.
  • the solder layer 2 when the solder layer 2 includes lanthanide elements, the melting point temperature of the solder ribbon 100 can be further lowered.
  • the melting point of the solder layer 2 can be further lowered, and the wettability of the solder layer 2 on the surface of the conductive substrate 1 can be increased.
  • the wettability can reduce the oxidation of Bi, and can reduce the low temperature brittleness of the ribbon 100 .
  • the lanthanoid elements specifically include lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium.
  • the content of Bi is 8% to 40% (inclusive)
  • the content of Sn is 40% to 65% (inclusive)
  • the sum of the content of at least one of Ga, Ge, In, Sb, and lanthanoids is 5% or less.
  • the solder layer 2 includes one of Ga, Ge, In, Sb and lanthanides, the content of the above one of Ga, Ge, In, Sb and lanthanides is less than or equal to 5 %; when the solder layer 2 includes a plurality of Ga, Ge, In, Sb and lanthanides, the sum of the content of the above-mentioned various Ga, Ge, In, Sb and lanthanides is less than or equal to 5%.
  • the melting point temperature of the solder ribbon 100 can be lower.
  • the higher the Bi content the lower the melting point temperature of the solder ribbon 100.
  • the content of Bi cannot be too high.
  • the reliability risk is greater, and the solder ribbon 100 is brittle and easily oxidized.
  • the melting point of the solder layer 2 can be lowered, and the low-temperature brittleness can be lowered to prevent oxidation.
  • the solder layer 2 includes a lanthanide element, the melting point temperature of the solder ribbon 100 can be further lowered.
  • solder ribbon 100 of the embodiment of the present disclosure by making the solder layer 2 composed of Sn, Bi, and Pb or composed of Sn, Bi, Pb, and at least one of Ga, Ge, In, Sb, and lanthanides, and
  • the content of Bi is 25% to 40% and the sum of the content of at least one of Ga, Ge, In, Sb and lanthanoids is 5% or less, or the solder layer 2 is composed of Sn and Bi or It is composed of Sn, Bi and at least one of Ga, Ge, In, Sb and lanthanides, and the content of Bi is 25% to 40% and at least one of Ga, Ge, In, Sb and lanthanides
  • the sum of the content of the species is less than or equal to 5%, which can lower the melting point of the solder layer 2, thereby lowering the soldering temperature of the solder ribbon 100 and improving the yield of the cell.
  • the content related to the constituent element of the solder layer 2 including Pb is only applicable to the first and second optional embodiments of the first aspect of the present disclosure, and the content related to the constituent element of the solder layer 2 does not include Pb Applicable to the third and fourth optional embodiments of the first aspect of the present disclosure, other content is applicable to any of the first to fourth optional embodiments of the first aspect of the present disclosure.
  • the content of Bi may be 20%. Therefore, when the content of Bi is 20%, the melting point of the welding strip 100 can be effectively reduced, the reliability of the welding strip 100 can be ensured, the low temperature brittleness of the welding strip 100 can be reduced, and oxidation can be prevented.
  • the content of Sn may be 45% to 58% (inclusive). This arrangement enables the welding strip 100 to have better welding performance, ensures the welding quality between the welding strip 100 and the cells of the photovoltaic module, and thus ensures that the welding strip 100 has high current collection efficiency.
  • the content of Sn may be 50% to 53% (including the endpoint value).
  • the content of Sn may be 53%.
  • the sum of the content of at least one of Ga, Ge, In, Sb and lanthanide is less than or equal to 1%.
  • the melting point temperature of the solder ribbon 100 can be lowered, the wettability can be improved, and the oxidation of Bi can be reduced, and at the same time, adverse effects on the solder ribbon 100 can be avoided.
  • the solder layer 2 is composed of Sn, Bi, Pb, Ga, In and lanthanides.
  • Ga can reduce the oxidation of Bi
  • In can increase the conductivity of the solder layer 2 and reduce the resistance
  • lanthanides can further reduce the melting point of the solder ribbon 100, and have better wetting properties, which can further reduce the oxidation of Bi. Therefore, the solder layer 2 thus provided makes the melting point of the solder tape 100 lower, has better wettability, and can prevent oxidation.
  • the solder layer 2 is composed of Sn, Bi, Ga, In and lanthanides.
  • the properties of Ga, In and lanthanides and their advantages brought to the ribbon are as described above and will not be repeated here. Therefore, the solder layer 2 thus arranged can also make the melting point of the solder tape 100 lower, have better wettability, and can prevent oxidation.
  • the melting point temperature of the solder layer 2 is T, where T satisfies: 125°C ⁇ T ⁇ 170°C. Specifically, for example, when T ⁇ 125°C, the melting point temperature of the solder layer 2 is too low, and the brittleness is high, so that the reliability of the solder ribbon 100 is low; when T>170°C, the melting point temperature of the solder layer 2 is too high. If the value is high, the welding temperature of the welding ribbon 100 is higher, which may lead to a higher defective rate of the cell, and there may be a virtual welding spot.
  • T 125°C ⁇ T ⁇ 170°C
  • the melting point temperature of the solder layer 2 is more reasonable, so that the yield rate of the cells of the photovoltaic module can be improved, the false soldering can be avoided, the low temperature brittleness can be reduced, and the soldering can be improved.
  • the cross-sectional shape of the welding ribbon 100 may be a circle, a triangle, a rectangle, or the like. Therefore, when the cross-sectional shape of the welding ribbon 100 is circular, continuous welding with the battery sheet can be achieved, and the series resistance can be reduced, thereby reducing the risk of cracking of the battery sheet; when the cross-sectional shape of the welding ribbon 100 is triangular. , the welding strip 100 has better welding performance and better reflective effect, which can improve the conversion efficiency; when the cross-sectional shape of the welding strip 100 is rectangular, the welding strip 100 is relatively flat, the thickness is smaller, and the Welding performance, and can achieve continuous welding with the battery.
  • the welding strip 100 may also be a combination of a welding strip having a triangular cross-sectional shape and a welding strip having a rectangular cross-sectional shape.
  • the welding strip 100 includes a triangular welding strip segment 3 and a rectangular welding strip segment 4 , wherein the cross-sectional shape of the triangular welding strip segment 3 is a triangle, and the cross-sectional shape of the rectangular welding strip segment 4 is a rectangle.
  • the triangular ribbon segment 3 and the rectangular ribbon segment 4 are connected to each other in the length direction of the ribbon 100 .
  • the rectangular welding strip section 4 can be connected to the back of the cell, and the welding area between the rectangular welding strip section 4 and the cell is large, which can improve the welding tension, thereby ensuring the reliability of the photovoltaic module, and the rectangular welding strip section 4 does not Occupies the front area of the cell.
  • the triangular welding strip section 3 is connected to the front side of the adjacent cell, and the light irradiated on the triangular welding strip section 3 can finally be reflected on the cell, which can effectively improve the optical utilization rate of the front side of the photovoltaic module and improve the power of the photovoltaic module. In this way, while ensuring that the welding strip 100 has good welding performance, continuous welding with the solar cells can be realized, and the optical utilization rate of the photovoltaic module can be effectively improved.
  • the cross-sectional shape of the solder ribbon 100 when the cross-sectional shape of the solder ribbon 100 is circular, the diameter of the solder ribbon 100 is d, and the thickness of the solder layer 2 is t 1 , where d and t 1 satisfy: 0.15mm ⁇ d ⁇ 0.4mm, 10 ⁇ m ⁇ t 1 ⁇ 20 ⁇ m.
  • the diameter of the welding strip 100 is too small, which may cause problems such as poor welding; when d>0.4mm, the diameter of the welding strip 100 is too large, which may increase
  • the shielding area of the cells affects the conversion efficiency of photovoltaic modules.
  • t 1 ⁇ 10 ⁇ m the thickness of the solder layer 2 is too small, which may reduce the welding quality between the solder ribbon 100 and the battery sheet.
  • t 1 >20 ⁇ m the cost of the entire solder ribbon 100 is too high.
  • d and t 1 satisfy: 0.15mm ⁇ d ⁇ 0.4mm and 10 ⁇ m ⁇ t 1 ⁇ 20 ⁇ m respectively, the welding quality between the welding tape 100 and the battery sheet can be guaranteed, and the stress on the battery sheet can be reduced. occlusion and low cost.
  • the cross-sectional shape of the solder ribbon 100 is a triangle
  • the length of the bottom side of the solder ribbon 100 is L
  • the thickness of the solder layer 2 is t 2
  • L and t 2 satisfy: 0.35 respectively.
  • the width of the solder ribbon 100 is w
  • the thickness of the solder layer 2 is t 3
  • w and t 3 respectively satisfy: 0.7mm ⁇ w ⁇ 0.9mm, 10 ⁇ m ⁇ t 3 ⁇ 40 ⁇ m.
  • the photovoltaic module according to the embodiment of the second aspect of the present disclosure includes the welding tape 100 according to the embodiment of the first aspect of the present disclosure.
  • the welding ribbon 100 can be welded with the busbars of the cell sheets for connecting adjacent cell sheets.
  • the grid line paste may be composed of conductive material and resin.
  • the melting point of the welding strip 100 is lower, low temperature brittleness can be reduced, and oxidation can be prevented, so that the yield of the photovoltaic module can be improved, and the cost can be reduced.
  • the processing method of the welding strip 100 according to the embodiment of the third aspect of the present disclosure includes the following steps:
  • the filamentary conductive base 1 is drawn and shaped for multiple times to obtain a regular-shaped conductive base 1 .
  • the copper wire passes through the pay-off module 200 for pay-off, and then enters the wire-drawing module 300 for multiple drawing and shaping, so as to obtain thin round wires or triangular copper wires with regular shapes and stable dimensions.
  • the wire-drawing module 300 for multiple drawing and shaping, so as to obtain thin round wires or triangular copper wires with regular shapes and stable dimensions.
  • the conductive substrate 1 with regular shape is heat-treated to obtain the conductive substrate 1 in a soft state.
  • the conductive substrate 1 such as copper wire can be heat-treated through the annealing module 500 to obtain soft copper wire, refine copper grains, reduce the yield strength of the copper wire, and improve the mechanical properties of the copper wire.
  • the soft conductive substrate 1 is plated with a solder layer 2 on its surface, so as to obtain a solder ribbon 100 .
  • the conductive substrate 1 such as copper wire can be plated with a solder layer 2 in the tin-plating module 600 .
  • solder layer 2 When the solder layer 2 is cooled and dried, it enters the wire take-up module 700 , so that a finished solder tape 100 that meets the specifications can be obtained.
  • the processing method of the welding strip 100 according to the embodiment of the present disclosure, the dimensional stability and production efficiency of the welding strip 100 can be improved, while the quality of the welding strip 100 is guaranteed, the production cost of the welding strip 100 is reduced, and the process steps are simplified.
  • the method further includes:
  • the conductive substrate 1 having a regular shape and a triangular cross-sectional shape is alternately extruded and non-extruded to obtain a special-shaped conductive substrate.
  • the special-shaped conductive substrate is a conductive substrate with a triangular cross-sectional shape and a rectangular cross-sectional shape. combination.
  • the wire base body 1 with a regular shape such as a thin round wire or a triangular copper wire, can enter the rolling module 400 .
  • the thin round wire or triangular copper wire can be squeezed by the upper and lower calendering wheels to obtain a conductive substrate with a rectangular cross-sectional shape.
  • the triangular copper wire can obtain a special-shaped conductive matrix, that is, a combination of a conductive matrix with a triangular cross-sectional shape and a conductive matrix with a rectangular cross-sectional shape.
  • the conductive base 1 does not need to enter the rolling module 400 .
  • a welding strip with a rectangular cross-sectional shape or a combination of a welding strip with a triangular cross-sectional shape and a rectangular cross-sectional shape can be obtained, with a simple process and high reliability.
  • the solder layer 2 plated on the surface is obtained by a hot dip process or an electroplating process.
  • Sn-Bi-Pb low-temperature tin material is used as the tin material.
  • the tin material is heated to a completely molten state, and then the conductive substrate 1 such as copper wire passes through the tin material in a completely molten state at a uniform speed. It can be evenly coated on the surface of the copper wire, the copper wire is cooled and blown dry, and finally enters the wire take-up module 700 to obtain the finished welding tape 100 that meets the specifications.
  • the anode of the electroplating pool adopts Sn-Bi-Pb alloy anode
  • the conductive substrate 1 such as copper wire enters the electroplating pool, and a thin layer of Sn-Bi-Pb alloy is plated on the surface of the copper wire through the principle of ion exchange.
  • the Sn-Bi-Pb alloy plating layer is firmly combined with the copper wire and has good adhesion.
  • the conductive substrate 1 is dehydrated, passivated, and dried after plating, and then enters the wire take-up module 700 to obtain a finished welding ribbon 100 that meets the specifications.
  • the solder layer 2 can be firmly attached to the conductive base 1, so that the quality of the entire solder ribbon 100 can be improved, so that the solder ribbon 100 has better solderability performance.
  • Sn-Bi low-temperature tin material is used as the tin material.
  • the tin material is heated to a completely molten state, and then the conductive substrate 1, such as a copper wire, passes through the tin material in a completely molten state at a uniform speed, and the tin material can be It is evenly coated on the surface of the copper wire, the copper wire is cooled and blown dry, and finally enters the wire take-up module 700 to obtain a finished welding tape 100 that meets the specifications.
  • the anode of the electroplating pool adopts Sn-Bi alloy anode, and the conductive substrate 1, such as copper wire, enters the electroplating bath, and a thin layer of Sn-Bi alloy is plated on the surface of the copper wire through the principle of ion exchange.
  • the alloy plating layer is firmly combined with the copper wire and has good adhesion. After plating, it enters the wire take-up module 700 after dehydration, passivation, and drying to obtain a finished welding ribbon 100 that meets the specifications.
  • the solder layer 2 can be firmly attached to the conductive base 1, so that the quality of the entire solder ribbon 100 can be improved, so that the solder ribbon 100 has better solderability performance.
  • the smelting coating agent on the surface of the mixed melt is removed, filtered through a filter, poured into a mold, and cooled to obtain alloy solder.
  • the Sn-Pb alloy into a crucible such as corundum crucible, add a certain amount of Bi, and smelt in a vacuum environment.
  • the smelting temperature is 260-300 ° C, and after complete melting, the temperature is kept for 40-60 minutes, and stirring every 10 minutes, take out After pouring into the mold and cooling, the alloy solder is obtained.
  • a first feature being "above” or “beneath” a second feature may include the first and second features in direct contact, or may include the first and second features not in direct contact but through them Additional feature contacts between.

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Abstract

一种焊带（100），包括：导电基体（1）；焊锡层（2），焊锡层（2）覆盖所述导电基体（1）的至少一部分，焊锡层（2）由Sn、Bi和Pb组成；或焊锡层（2）由Sn、Bi、Pb、以及Ga、Ge、In、Sb和镧系元素中的至少一种组成；其中，所述Bi的含量为8％～20％，所述Sn的含量为40％～65％，所述Pb的含量为25％～40％，所述Ga、所述Ge、所述In、所述Sb和所述镧系元素中的至少一种的含量之和为小于或等于5％。该焊带（100）的熔点较低，且可以降低其在低温下的脆性，防止氧化，从而可以提高光伏组件的良率，且可以降低成本。还公开了一种具有上述焊带（100）的光伏组件，以及还公开了一种上述焊带（100）的加工方法。

Description

焊带和具有其的光伏组件及焊带的加工方法 技术领域
本公开涉及焊带制造技术领域，尤其是涉及一种焊带和具有其的光伏组件及焊带的加工方法。
背景技术
焊带为光伏组件的主要辅料之一，起着连接电池片以及导电的作用，焊带的导电性、可焊性和伸长率对光伏组件的质量起着至关重要的作用。相关技术中，焊带的熔点较高，从而导致焊带的焊接温度较高，使得电池片不良率较高，且存在虚焊处。
公开内容
本公开旨在至少解决现有技术中存在的技术问题之一。为此，本公开的一个目的在于提出一种焊带，所述焊带的熔点较低，可以降低焊带的焊接温度，提高电池片的良率。
本公开的另一个目的在于提出一种具有上述焊带的光伏组件。
本公开的再一个目的在于提出一种上述焊带的加工方法。
根据本公开第一方面实施例的光伏组件，包括：导电基体；焊锡层，所述焊锡层覆盖所述导电基体的至少一部分，所述焊锡层由Sn、Bi和Pb组成；或所述焊锡层由Sn、Bi、Pb、以及Ga、Ge、In、Sb和镧系元素中的至少一种组成；其中，所述Bi的含量为8％～20％，所述Sn的含量为40％～65％，所述Pb的含量为25％～40％，所述Ga、所述Ge、所述In、所述Sb和所述镧系元素中的至少一种的含量之和为小于或等于5％。
根据本公开实施例的焊带，通过使焊锡层由Sn、Bi和Pb组成或由Sn、Bi、Pb、以及Ga、Ge、In、Sb和镧系元素中的至少一种组成，并使Bi的含量为8％～40％且Ga、Ge、In、Sb和镧系元素中的至少一种的含量之和为小于或等于5％，可以降低焊锡层的熔点，从而降低焊带的焊接温度，提高电池片的良率。
根据本公开的一些实施例，所述Sn的含量为45％～58％。
根据本公开的一些实施例，所述Sn的含量为50％～53％。
根据本公开的一些实施例，所述Sn的含量为53％。
根据本公开的一些实施例，所述Ga、所述Ge、所述In、所述Sb和所述镧系元素中的至少一种的含量之和为小于或等于1％。
根据本公开的一些实施例，所述焊锡层由Sn、Bi、Pb、Ga、In和镧系元素组成。
根据本公开的一些实施例，所述焊锡层的熔点温度为T，其中所述T满足：125℃≤T≤170℃。
根据本公开的一些实施例，所述焊带为横截面形状为圆形的焊带、横截面形状为三角形的 焊带、横截面形状为矩形的焊带、或横截面形状为三角形的焊带和横截面形状为矩形的焊带的组合。
根据本公开的一些实施例，当所述焊带的横截面形状为圆形时，所述焊带的直径为d，所述焊锡层的厚度为t 1，其中所述d、t 1分别满足：0.15mm≤d≤0.4mm、10μm≤t 1≤20μm。
根据本公开的一些实施例，当所述焊带的横截面形状为三角形时，所述焊带的底边长为L，所述焊锡层的厚度为t 2，其中所述L、t 2分别满足：0.35mm≤L≤0.45mm、10μm≤t 2≤40μm。
根据本公开的一些实施例，当所述焊带的横截面形状为矩形时，所述焊带的宽度为w，所述焊锡层的厚度为t 3，其中所述w、t 3分别满足：0.7mm≤w≤0.9mm、10μm≤t 3≤40μm。
根据本公开的一些实施例，所述导电基体为铜基体、铜铝合金基体、铜银合金基体或铜银铝合金基体。
根据本公开第二方面实施例的光伏组件，包括根据本公开上述第一方面实施例的焊带。
根据本公开第三方面实施例的焊带的加工方法，包括以下步骤：将丝状的导电基体进行多次拉拔定型，以得到形状规则的导电基体；对形状规则的导电基体进行热处理，以得到软态的导电基体；软态的导电基体冷却后表面镀附焊锡层，以得到所述焊带。
根据本公开的一些实施例，在对形状规则的导电基体进行热处理之前，还包括：对形状规则的导电基体进行挤压以得到矩形导电基体；或对形状规则且横截面形状为三角形的导电基体进行挤压、非挤压交替进行以得到异形导电基体，所述异形导电基体为横截面形状为三角形的导电基体和横截面形状为矩形的导电基体的组合。
根据本公开的一些实施例，在软态的导电基体冷却后表面镀附焊锡层是采用热浸工艺或电镀工艺得到的。
本公开的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本公开的实践了解到。
附图说明
本公开的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解，其中：
图1是根据本公开实施例的焊带的横截面示意图；
图2是根据本公开另一个实施例的焊带的横截面示意图；
图3是根据本公开再一个实施例的焊带的横截面示意图；
图4是根据本公开又一个实施例的焊带的横截面示意图；
图5是根据本公开实施例的Bi的不同含量与焊锡层的熔点温度的示意图；
图6是根据本公开实施例的Bi的不同含量与焊锡层的熔点温度的另一个示意图；
图7是根据本公开实施例的焊带的加工方法的流程示意图；
图8是根据本公开一个实施例的焊锡层的加工方法的流程示意图；
图9是根据本公开另一个实施例的焊锡层的加工方法的流程示意图。
附图标记：
100：焊带；
1：导电基体；2：焊锡层；
3：三角形焊带段；4：矩形焊带段；
200：放线模块；300：拉丝模块；
400：压延模块；500：退火模块；
600：镀锡模块；700：收线模块。
具体实施方式
下面详细描述本公开的实施例，参考附图描述的实施例是示例性的，下面详细描述本公开的实施例。
下面参考图1-图9描述根据本公开第一方面实施例的焊带100。焊带100可以应用于光伏组件(图未示出)例如异质结(一种特殊的PN结，由多于两层的不同的半导体材料薄膜依次沉积在同一基座上形成，这些材料具有不同的能带隙，且这些材料可以是砷化镓之类的化合物，也可以是硅-锗之类的半导体合金)组件。在本申请下面的描述中，以焊带100应用于光伏组件为例进行说明。可以理解的是，焊带100属于一种互连结构件，为了方便描述，本公开仅就应用于光伏组件的互连结构件即焊带进行了详述。本领域的技术人员可以理解，针对焊带100的下述结构和特性可以应用于其它的互连结构件，而不仅限于应用于焊带。
如图1-图4所示，根据本公开第一方面实施例的焊带100，包括导电基体1和焊锡层2，焊锡层2覆盖导电基体1的至少一部分。其中，导电基体1可以为铜基体、铜铝合金基体、铜银合金基体或铜银铝合金基体等。但不限于此。
焊锡层2的熔点可以小于导电基体1的熔点，焊锡层2熔化后，具有一定的流动性，液态的焊锡层2填充焊带100与电池片之间的间隙，从而实现焊带100与光伏组件的电池片之间的连接。
具体而言，根据本公开的第一方面的第一可选实施例，焊锡层2可以由Sn(锡，金属元素，一种有银白色光泽的金属元素)、Bi(铋，元素周期表第六周期VA族83号元素)和Pb(铅，一种金属化学元素，原子序数为82，原子量207.2，是原子量最大的非放射性元素)组成。其中，Sn的熔点较低，且质地柔软，富有延展性，在焊带100与光伏组件的电池片之间的焊接中起重要作用。Pb可以减小焊锡层2表面的张力和粘度，从而使焊锡层2具有较好的润湿性，且可以很好地吸收温度变化而产生的热应力。Bi元素可以降低焊锡层2的熔点温度，从而可以降低焊带100的焊接温度，提高电池片的良率，避免产生虚焊。且无污染，环境友好。
根据本公开的第一方面的第二可选实施例，焊锡层2也可以由Sn、Bi、Pb以及Ga、Ge、In、Sb和镧系元素中的至少一种组成。也就是说，焊锡层2可以由Sn、Bi、Pb以及Ga、Ge、In、Sb和镧系元素中一种或多种组成。例如，当焊锡层2由Sn、Bi、Pb以及Ga、Ge、In、Sb和镧系元素中一种组成时，焊锡层2可以由Sn、Bi、Pb和Ga组成；或者，焊锡层2可以由Sn、Bi、Pb和Ge组成；或者，焊锡层2可以由Sn、Bi、Pb和In组成；又或者，焊锡层2可以由Sn、Bi、Pb和Sb组成；再或者，焊锡层2可以由镧系元素中的其中一种和Sn、Bi、Pb组成。
当焊锡层2由Sn、Bi、Pb以及Ga、Ge、In、Sb和镧系元素中的多种组成时，焊锡层2除了包括Sn、Bi和Pb之外，还包括Ga、Ge、In、Sb和镧系元素中的多种。在本公开的描述中，“多种”的含义是两种或多于两种。需要说明的是，“Ga、Ge、In、Sb和镧系元素中的多种”可以仅是Ga、Ge、In、Sb中的多种；也可以仅是镧系元素中的多种；当然，还可以既包括Ga、Ge、In、Sb中的至少一种，又包括镧系元素中的至少一种。
由此，通过在焊锡层2中添加Ga、Ge、In、Sb和镧系元素中的至少一种，可以进一步降低焊锡层2的熔点，增加焊锡层2在导电基体1表面的润湿性，降低Bi的氧化，且可以降低焊带100的低温脆性。
这里，需要说明的是，镧系元素(rare earth elements，别名稀土元素，用REE表示)是指元素周期表中第57号元素镧到71号元素镥15种元素的统称，具体包括镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱和镥。
在根据本公开的第一方面的第一和第二可选实施例中，Bi的含量为8％～40％(包括端点值)，Sn的含量为40％～65％(包括端点值)，Pb的含量为25％～40％(包括端点值)，Ga、Ge、In、Sb和镧系元素中的至少一种的含量之和为小于或等于5％。也就是说，当焊锡层2包括Ga、Ge、In、Sb和镧系元素中的其中一种时，Ga、Ge、In、Sb和镧系元素中的上述其中一种的含量小于或等于5％；当焊锡层2包括Ga、Ge、In、Sb和镧系元素中的多种时，Ga、Ge、In、Sb和镧系元素中的上述多种的含量之和小于或等于5％。
例如，当焊锡层2由Sn、Bi和Pb组成时，Sn的含量可以固定不变，Bi的含量不同，焊锡层2的熔点温度不同，Bi的含量与焊锡层2的熔点温度之间的关系如表1所示。
表1
Figure PCTCN2021109339-appb-000001
Figure PCTCN2021109339-appb-000002
参照表1并结合图5、图6，Bi的含量每增加1％，Pb的含量相应下降1％，熔点温度可以降低约2℃。而且，当焊锡层2包括镧系元素时，可以进一步降低焊带100的熔点温度。但Bi的含量不能过高，当Bi含量过高时，可靠性风险越大，焊带100易脆，且易氧化。由此，通过使Bi的含量为8％～40％，可以在降低焊锡层2的熔点的同时，可以降低低温脆性，防止氧化。
根据本公开的第一方面的第三可选实施例，焊锡层2可以由Sn和Bi组成。Sn和Bi元素的特性及其为焊锡层2所带来的优点与上述的特性和优点相同，在此不再赘述。
根据本公开的第一方面的第四可选实施例，焊锡层2也可以由Sn、Bi以及Ga、Ge、In、Sb和镧系元素中的至少一种组成。也就是说，焊锡层2可以由Sn、Bi以及Ga、Ge、In、Sb和镧系元素中一种或多种组成。
例如，当焊锡层2由Sn、Bi以及Ga、Ge、In、Sb和镧系元素中一种组成时，焊锡层2可以由Sn、Bi和Ga组成；或者，焊锡层2可以由Sn、Bi和Ge组成；或者，焊锡层2可以由Sn、Bi和In组成；又或者，焊锡层2可以由Sn、Bi和Sb组成；再或者，焊锡层2可以由镧系元素中的其中一种和Sn、Bi组成。
当焊锡层2由Sn、Bi以及Ga、Ge、In、Sb和镧系元素中的多种组成时，焊锡层2除了包括Sn和Bi之外，还包括Ga、Ge、In、Sb和镧系元素中的多种。再次说明的是，“Ga、Ge、In、Sb和镧系元素中的多种”可以仅是Ga、Ge、In、Sb中的多种；也可以仅是镧系元素中的多种；当然，还可以既包括Ga、Ge、In、Sb中的至少一种，又包括镧系元素中的至少一种。其中，当焊锡层2包括镧系元素时，可以进一步降低焊带100的熔点温度。由此，同样地，通过在焊锡层2中添加Ga、Ge、In、Sb和镧系元素中的至少一种，可以进一步降低焊锡层2的熔点，增加焊锡层2在导电基体1表面的润湿性，降低Bi的氧化，且可以降低焊带100的低温脆性。
这里，再次说明，镧系元素具体包括镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱和镥。
在根据本公开的第一方面的第三和第四可选实施例中，Bi的含量为8％～40％(包括端点值)，Sn的含量为40％～65％(包括端点值)，Ga、Ge、In、Sb和镧系元素中的至少一种的含量之和为小于或等于5％。也就是说，当焊锡层2包括Ga、Ge、In、Sb和镧系元素中的其中一种时，Ga、Ge、In、Sb和镧系元素中的上述其中一种的含量小于或等于5％；当焊锡层2包括Ga、Ge、In、Sb和镧系元素中的多种时，Ga、Ge、In、Sb和镧系元素中的上述多种的含量之和小于或等于5％。
同样地，由于Bi可以降低焊带100的熔点温度，Bi的含量越高，焊带100的熔点温度越 低。但Bi的含量不能过高，当Bi含量过高时，可靠性风险越大，焊带100易脆，且易氧化。由此，通过使Bi的含量为8％～40％，可以在降低焊锡层2的熔点的同时，可以降低低温脆性，防止氧化。而且，当焊锡层2包括镧系元素时，可以进一步降低焊带100的熔点温度。
根据本公开实施例的焊带100，通过使焊锡层2由Sn、Bi和Pb组成或由Sn、Bi、Pb、以及Ga、Ge、In、Sb和镧系元素中的至少一种组成，并使Bi的含量为25％～40％且Ga、Ge、In、Sb和镧系元素中的至少一种的含量之和为小于或等于5％，或者通过使焊锡层2由Sn和Bi组成或由Sn、Bi以及Ga、Ge、In、Sb和镧系元素中的至少一种组成，并使Bi的含量为25％～40％且Ga、Ge、In、Sb和镧系元素中的至少一种的含量之和为小于或等于5％，可以降低焊锡层2的熔点，从而降低焊带100的焊接温度，提高电池片的良率。
在下文的描述中，涉及到焊锡层2的组成元素包括Pb的内容仅适用于本公开第一方面的第一和第二可选实施例，涉及到焊锡层2的组成元素不包括Pb的内容适用于本公开的第一方面的第三和第四可选实施例，其它内容适用于本公开第一方面的第一至第四可选实施例中的任一者。
在本公开的一些可选实施例中，Bi的含量可以为20％。由此，当Bi的含量为20％时，可以有效降低焊带100的熔点，且可以保证焊带100的可靠性，降低焊带100的低温脆性，防止氧化。
在本公开的一些可选实施例中，Sn的含量可以为45％～58％(包括端点值)。如此设置，使焊带100具有较好的焊接性能，保证焊带100与光伏组件的电池片之间的焊接质量，从而保证焊带100具有较高的电流收集效率。
进一步可选地，Sn的含量可以为50％～53％(包括端点值)。例如，Sn的含量可以为53％。如此设置，可以在降低焊带100的熔点温度的同时，进一步提升焊带100的焊接性能，提高焊带100与光伏组件的电池片之间的焊接质量，保证焊带100具有较高的电流收集效率。
可选地，Ga、Ge、In、Sb和镧系元素中的至少一种的含量之和为小于或等于1％。由此，可以在降低焊带100的熔点温度、提高润湿性能和降低Bi的氧化的同时，避免对焊带100产生不良影响。
在本公开的一些具体实施例中，焊锡层2由Sn、Bi、Pb、Ga、In和镧系元素组成。其中，Ga可以降低Bi的氧化，In可以增加焊锡层2的导电率，降低电阻，镧系元素可以进一步降低焊带100的熔点，且润湿性能较好，可以进一步降低Bi的氧化。由此，如此设置的焊锡层2使焊带100的熔点较低，具有较好的润湿性且可以防止氧化。
在本发明的另一些具体实施例中，焊锡层2由Sn、Bi、Ga、In和镧系元素组成。Ga、In和镧系元素的特性及其为焊带带来的优点如上所述，在此不再赘述。由此，如此设置的焊锡层2同样可以使焊带100的熔点较低，具有较好的润湿性且可以防止氧化。
在本公开的一些实施例中，焊锡层2的熔点温度为T，其中T满足：125℃≤T≤170℃。具体地，例如，当T＜125℃时，焊锡层2的熔点温度过低，脆性较大，从而使焊带100的可 靠性较低；当T＞170℃时，焊锡层2的熔点温度过高，使焊带100的焊接温度较高，从而可能导致电池片的不良率较高，且可能存在虚焊处。由此，通过使T满足：125℃≤T≤170℃，焊锡层2的熔点温度较为合理，从而可以提高光伏组件的电池片的良率，避免产生虚焊，且可以降低低温脆性，提高焊带100的可靠性。
可选地，如图1、图3和图4所示，焊带100的横截面形状可以为圆形、三角形或矩形等。由此，当焊带100的横截面形状为圆形时，可以实现与电池片的连续焊接，且可以降低串联电阻，降低电池片隐裂的风险；当焊带100的横截面形状为三角形时，焊带100具有较好的焊接性能，且具有较好的反光效果，可以提高转换效率；当焊带100的横截面形状为矩形时，焊带100较扁平，厚度较小，具有较好的焊接性能，且可以实现与电池片的连续焊接。
当然，本公开不限于此，参照图2，焊带100还可以为横截面形状为三角形的焊带和横截面形状为矩形的焊带的组合。例如，在图2的示例中，焊带100包括三角形焊带段3和矩形焊带段4，其中，三角形焊带段3的横截面形状为三角形，矩形焊带段4的横截面形状为矩形。三角形焊带段3和矩形焊带段4在焊带100的长度方向上彼此相连。例如，矩形焊带段4可以连接在电池片的背面，矩形焊带段4与电池片的焊接面积较大，可以提高焊接拉力，从而可以保证光伏组件的可靠性，且矩形焊带段4不占用电池片的正面区域。三角形焊带段3连接在相邻电池片的正面，照射到三角形焊带段3上的光线最终可以反射到电池片上，可以有效提高光伏组件正面的光学利用率，提高光伏组件的功率。如此设置，在保证焊带100具有较好的焊接性能的同时，可以实现与电池片的连续焊接，且可以有效提高光伏组件的光学利用率。
在本公开的一些实施例中，当焊带100的横截面形状为圆形时，焊带100的直径为d，焊锡层2的厚度为t 1，其中d、t 1分别满足：0.15mm≤d≤0.4mm、10μm≤t 1≤20μm。
具体地，例如，当d＜0.15mm时，焊带100的直径过小，可能产生虚焊等焊接不良的问题；当d＞0.4mm时，焊带100的直径过大，从而可能会增大对电池片的遮挡面积，影响光伏组件的转化效率。当t 1＜10μm时，焊锡层2的厚度过小，从而可能降低焊带100与电池片之间的焊接质量，当t 1＞20μm时，会导致整个焊带100的成本过高。由此，通过使d、t 1分别满足：0.15mm≤d≤0.4mm、10μm≤t 1≤20μm，在保证焊带100与电池片之间的焊接质量的同时，可以减小对电池片的遮挡，且成本较低。
在本公开的一些具体实施例中，当焊带100的横截面形状为三角形时，焊带100的底边长为L，焊锡层2的厚度为t 2，其中L、t 2分别满足：0.35mm≤L≤0.45mm、10μm≤t 2≤40μm。由此，通过上述设置，可以在提高光伏组件的转换率的同时，保证焊带100与电池片之间具有较好的焊接质量，且同样可以降低成本。
在本公开的一些实施例中，当焊带100的横截面形状为矩形时，焊带100的宽度为w，焊锡层2的厚度为t 3，其中w、t 3分别满足：0.7mm≤w≤0.9mm、10μm≤t 3≤40μm。如此设置，在保证焊带100与电池片之间的焊接质量的同时，同样可以减小对电池片的止挡，且可以降 低焊带100的成本。
根据本公开第二方面实施例的光伏组件，包括根据本公开上述第一方面实施例的焊带100。例如，焊带100可以与电池片的主栅进行焊接，用于连接相邻的电池片。其中，栅线浆料可以由导电材料和树脂组成。
根据本公开实施例的光伏组件，通过采用上述的焊带100，焊带100的熔点较低，且可以降低低温脆性，防止氧化，从而可以提高光伏组件的良率，且可以降低成本。
根据本公开实施例的光伏组件的其他构成以及操作对于本领域普通技术人员而言都是已知的，这里不再详细描述。
根据本公开第三方面实施例的焊带100的加工方法，参照图7，包括以下步骤：
将丝状的导电基体1进行多次拉拔定型，以得到形状规则的导电基体1。
例如，当导电基体1为铜导电基体时，铜丝经过放线模块200进行放线，然后进入拉丝模块300进行多次拉拔定型，从而获得形状规则且尺寸规格稳定的细圆丝或三角铜丝。
对形状规则的导电基体1进行热处理，以得到软态的导电基体1。
在上述步骤中，导电基体1例如铜丝可以经过退火模块500进行热处理，从而可以获得软态铜丝，细化铜的晶粒，降低铜丝的屈服强度，提高铜丝的机械性能。
软态的导电基体1冷却后表面镀附焊锡层2，以得到焊带100。
其中，导电基体1例如铜丝可以在镀锡模块600中镀附焊锡层2，当焊锡层2冷却干燥后进入收线模块700，从而可以获得符合规格的成品焊带100。
根据本公开实施例的焊带100的加工方法，可以提升焊带100的尺寸稳定性及生产效率，在保证焊带100的质量的同时，降低焊带100的生产成本，简化了工艺步骤。在本公开的一些实施例中，结合图7，在对形状规则的导电基体1进行热处理之前，还包括：
对形状规则的导电基体1进行挤压以得到矩形导电基体；或
对形状规则且横截面形状为三角形的导电基体1进行挤压、非挤压交替进行以得到异形导电基体，异形导电基体为横截面形状为三角形的导电基体和横截面形状为矩形的导电基体的组合。
例如，当需要制造横截面形状为矩形的焊带或异形焊带时，可以在得到形状规则的导电基体1后，可以使形状规则的导线基体1例如细圆丝或三角铜丝进入压延模块400。
其中，细圆丝或三角铜丝通过上、下压延轮的挤压可以获得横截面形状为矩形的导电基体。三角铜丝通过异形的上压延轮、平整的下压延轮的咬合及分离状态交替过程中可以获得异形导电基体也就是横截面形状为三角形的导电基体和横截面形状为矩形的导电基体的组合。当需要制作横截面形状为圆形的焊带时，导电基体1无需进入压延模块400。由此，通过上述步骤，可以获得横截面形状为矩形的焊带或横截面形状为三角形的焊带和横截面形状为矩形的焊带的组合，工艺简单，可靠性较高。
在本公开的一些实施例中，在软态的导电基体1冷却后表面镀附焊锡层2是采用热浸工艺 或电镀工艺得到的。
例如，当采用热浸工艺时，锡料采用Sn-Bi-Pb低温锡料，首先将锡料加热至完全熔融状态，然后导电基体1例如铜丝匀速通过处于完全熔融状态的锡料，锡料可以均匀涂敷于铜丝表面，铜丝经过冷却吹干，最后进入收线模块700，可以获得符合规格的成品焊带100。
当采用电镀工艺时，电镀池阳极采用Sn-Bi-Pb合金阳极，导电基体1例如铜丝进入电镀池中，通过离子交换原理，在铜丝表面镀上一薄层Sn-Bi-Pb合金，该Sn-Bi-Pb合金镀层与铜丝结合牢固，附着力好。导电基体1在镀后经过脱水、钝化、干燥后进入收线模块700，获得符合规格的成品焊带100。由此，通过采用热浸工艺或电镀工艺镀附焊锡层2，使焊锡层2可以牢靠地附着在导电基体1上，从而可以提高整个焊带100的质量，使焊带100具有较好的焊接性能。
又例如，当采用热浸工艺时，锡料采用Sn-Bi低温锡料，首先将锡料加热至完全熔融状态，然后导电基体1例如铜丝匀速通过处于完全熔融状态的锡料，锡料可以均匀涂敷于铜丝表面，铜丝经过冷却吹干，最后进入收线模块700，可以获得符合规格的成品焊带100。
当采用电镀工艺时，电镀池阳极采用Sn-Bi合金阳极，导电基体1例如铜丝进入电镀池中，通过离子交换原理，在铜丝表面镀上一薄层Sn-Bi合金，该Sn-Bi合金镀层与铜丝结合牢固，附着力好，镀后经过脱水、钝化、干燥后进入收线模块700，获得符合规格的成品焊带100。由此，通过采用热浸工艺或电镀工艺镀附焊锡层2，使焊锡层2可以牢靠地附着在导电基体1上，从而可以提高整个焊带100的质量，使焊带100具有较好的焊接性能。
下面结合图8和图9描述根据本公开实施例的两种焊锡层2的加工方法。
第一种：
将Sn，Bi，Pb按照一定的百分比混合均匀，加热至290～320℃，获得混合熔体；
然后加入熔炼覆盖剂，保温搅拌时间30分钟；
除去所述混合熔体表面的熔炼覆盖剂，并通过滤器进行过滤，倒入模具后冷却，得到合金焊料。
第二种：
将Sn、Pb按照一定的百分比混合均匀加入坩埚例如刚玉坩埚中，在真空环境下进行熔炼，熔炼温度290～320℃，待原料完全熔化后保温40-60min，并且每10min搅拌一次，取出倒入模具后备用；
将Sn-Pb合金放入坩埚例如刚玉坩埚中，并加入一定量的Bi，在真空环境下进行熔炼，熔炼温度为260-300℃，完全熔化后保温40-60min，并且每10min搅拌一次，取出倒入模具后冷却，即得合金焊料。
在本公开的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“轴向”、“径向”、“周向”等指示的方位或位置关 系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
在本公开的描述中，第一特征在第二特征“之上”或“之下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本公开的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。
尽管已经示出和描述了本公开的实施例，本领域的普通技术人员可以理解：在不脱离本公开的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型，本公开的范围由权利要求及其等同物限定。

Claims (16)

  1. 一种焊带，其特征在于，包括：
    导电基体；
    焊锡层，所述焊锡层覆盖所述导电基体的至少一部分，
    所述焊锡层由Sn、Bi和Pb组成；或
    所述焊锡层由Sn、Bi、Pb、以及Ga、Ge、In、Sb和镧系元素中的至少一种组成；
    其中，所述Bi的含量为8％～20％，所述Sn的含量为40％～65％，所述Pb的含量为25％～40％，所述Ga、所述Ge、所述In、所述Sb和所述镧系元素中的至少一种的含量之和为小于或等于5％。
  2. 根据权利要求1所述的焊带，其特征在于，所述Sn的含量为45％～58％。
  3. 根据权利要求2所述的焊带，其特征在于，所述Sn的含量为50％～53％。
  4. 根据权利要求3所述的焊带，其特征在于，所述Sn的含量为53％。
  5. 根据权利要求1-4中任一项所述的焊带，其特征在于，所述Ga、所述Ge、所述In、所述Sb和所述镧系元素中的至少一种的含量之和为小于或等于1％。
  6. 根据权利要求1-5中任一项所述的焊带，其特征在于，所述焊锡层由Sn、Bi、Pb、Ga、In和镧系元素组成。
  7. 根据权利要求1-6中任一项所述的焊带，其特征在于，所述焊锡层的熔点温度为T，其中所述T满足：125℃≤T≤170℃。
  8. 根据权利要求1-7中任一项所述的焊带，其特征在于，所述焊带为横截面形状为圆形的焊带、横截面形状为三角形的焊带、横截面形状为矩形的焊带、或横截面形状为三角形的焊带和横截面形状为矩形的焊带的组合。
  9. 根据权利要求1-8中任一项所述的焊带，其特征在于，当所述焊带的横截面形状为圆形时，所述焊带的直径为d，所述焊锡层的厚度为t 1，其中所述d、t 1分别满足：0.15mm≤d≤0.4mm、10μm≤t 1≤20μm。
  10. 根据权利要求1-8中任一项所述的焊带，其特征在于，当所述焊带的横截面形状为三角形时，所述焊带的底边长为L，所述焊锡层的厚度为t 2，其中所述L、t 2分别满足：0.35mm≤L≤0.45mm、10μm≤t 2≤40μm。
  11. 根据权利要求1-8中任一项所述的焊带，其特征在于，当所述焊带的横截面形状为矩形时，所述焊带的宽度为w，所述焊锡层的厚度为t 3，其中所述w、t 3分别满足：0.7mm≤w≤0.9mm、10μm≤t 3≤40μm。
  12. 根据权利要求1-11中任一项所述的焊带，其特征在于，所述导电基体为铜基体、铜铝合金基体、铜银合金基体或铜银铝合金基体。
  13. 一种光伏组件，其特征在于，包括根据权利要求1-12中任一项所述的焊带。
  14. 一种根据权利要求1-12中任一项所述的焊带的加工方法，其特征在于，包括以下步骤：
    将丝状的导电基体进行多次拉拔定型，以得到形状规则的导电基体；
    对形状规则的导电基体进行热处理，以得到软态的导电基体；
    软态的导电基体冷却后表面镀附焊锡层，以得到所述焊带。
  15. 根据权利要求14所述的焊带的加工方法，其特征在于，在对形状规则的导电基体进行热处理之前，还包括：
    对形状规则的导电基体进行挤压以得到矩形导电基体；或
    对形状规则且横截面形状为三角形的导电基体进行挤压、非挤压交替进行以得到异形导电基体，所述异形导电基体为横截面形状为三角形的导电基体和横截面形状为矩形的导电基体的组合。
  16. 根据权利要求14或15所述的焊带的加工方法，其特征在于，在软态的导电基体冷却后表面镀附焊锡层是采用热浸工艺或电镀工艺得到的。
PCT/CN2021/109339 2020-08-10 2021-07-29 焊带和具有其的光伏组件及焊带的加工方法 WO2022033323A1 (zh)

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