WO2022032741A1 - 显示面板及其制备方法 - Google Patents

显示面板及其制备方法 Download PDF

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Publication number
WO2022032741A1
WO2022032741A1 PCT/CN2020/112455 CN2020112455W WO2022032741A1 WO 2022032741 A1 WO2022032741 A1 WO 2022032741A1 CN 2020112455 W CN2020112455 W CN 2020112455W WO 2022032741 A1 WO2022032741 A1 WO 2022032741A1
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Prior art keywords
layer
electrode
display area
light
array substrate
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PCT/CN2020/112455
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English (en)
French (fr)
Inventor
万之君
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US17/047,469 priority Critical patent/US11374073B2/en
Publication of WO2022032741A1 publication Critical patent/WO2022032741A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the field of display technology, in particular to a large-size top-emitting OLED display panel and a preparation method thereof.
  • An organic electroluminescence (OLED) display device mainly includes a bottom emission type (light is emitted downward relative to the substrate) and a top emission type (light is emitted upward relative to the substrate).
  • top-emitting OLED emits light without passing through the substrate, and its light is emitted from above the device.
  • the pixel circuit design on the substrate will not affect the light-emitting area of the device, avoiding the competition between thin-film transistor (TFT) and metal circuit area and light-emitting area. , can effectively improve the aperture ratio of the panel, and prepare a high-brightness, high-resolution OLED display panel.
  • the top-emitting OLED has a lower operating voltage under the same brightness, so the device has a longer life and lower power consumption.
  • cathodes of top-emitting OLED devices generally use low work function metals or alloys (eg, Ag or Mg, Ag alloys), or transparent conductive oxides (TCOs, such as IZO).
  • low work function metals or alloys eg, Ag or Mg, Ag alloys
  • TCOs transparent conductive oxides
  • the square resistance of the cathode of the device is too large, and the panel voltage drop (IR-Drop) is serious. Serious uneven brightness of the panel. When the panel is too bright, the panel heats up too much, which will easily affect the normal operation of the TFT substrate.
  • the cathode sheet resistance is too large, the driving voltage of the OLED device is large, and the power consumption of the panel increases.
  • One of the objectives of the present invention is to provide a display panel, wherein an auxiliary cathode is arranged in a non-display area, and a parallel connection between the auxiliary cathode and the cathode is used to reduce the cathode resistance of the device, so as to improve the IR-Drop phenomenon and improve the brightness uniformity of the panel.
  • the display panel includes: an array substrate having a display area and a non-display area; a first electrode disposed on the array substrate and corresponding to the display area; a pixel definition layer disposed on the array substrate and corresponding to the display area the non-display area; an organic functional layer, disposed on the first electrode and the pixel definition layer; a second electrode, disposed on the organic functional layer; a cover layer, disposed on the second electrode and corresponding to the The display area; the auxiliary electrode, which is arranged on the second electrode and corresponds to the non-display area, and the auxiliary electrode is connected in parallel with the second electrode.
  • the material of the cover layer includes an organic material; the material of the auxiliary electrode includes a metal material.
  • the organic functional layer includes: a light-emitting functional layer, disposed on the first electrode; an electron transport layer, disposed on the light-emitting functional layer and the pixel definition layer.
  • the light-emitting functional layer includes: a hole injection layer; a hole transport layer, which is provided on the hole injection layer; and a light-emitting layer, which is provided on the hole transport layer.
  • the pixel definition layer includes: a first layer, the edge of which covers the first electrode; and a second layer, disposed on the first layer.
  • Another object of the present invention is to provide a preparation method of a display panel, which can pattern an organic material to form a cover layer without using a fine mask, and realize the patterning of a metal material to form an auxiliary electrode by utilizing the characteristics of self-assembled materials, thereby reducing production costs.
  • the preparation method of the display panel includes: providing an array substrate and a mask, the array substrate has a display area and a non-display area, the mask includes a light-transmitting area and a non-light-transmitting area; forming a first electrode on the on the array substrate of the display area and corresponding to the display area; forming a pixel definition layer on the array substrate of the non-display area and corresponding to the non-display area; forming an organic functional layer on the first electrode and on the pixel definition layer; forming a second electrode on the organic functional layer; vacuum evaporation of an organic material on the second electrode; disposing the mask on the array substrate, the transparent
  • the light area corresponds to the non-display area
  • the non-transmissive area corresponds to the display area; the laser irradiates the mask, and the light passes through the transparent area to the organic material in the non-display area, the The organic material in the non-display area absorbs high energy and sublimates into a gaseous state,
  • the step of forming the auxiliary electrode on the second electrode of the non-display area specifically includes: vacuum evaporation of metal materials on the display area and the non-display area, since the organic material in the display area Due to the repulsion effect of the metal material, the metal material autonomously forms a film in the non-light-emitting region to form the auxiliary electrode.
  • the mask plate includes: a light-transmitting substrate with alignment marks; a masking layer, which is provided on the light-transmitting substrate and corresponds to the non-light-transmitting area; a limiting frame, which is provided on the light-transmitting substrate around and surrounding the masking layer.
  • the step of arranging the mask plate above the array substrate it includes corresponding the alignment mark of the mask plate to the alignment mark of the array substrate.
  • the side faces the array substrate, and the limiting frame is arranged on the periphery of the array substrate.
  • the organic functional layer is prepared by means of inkjet printing.
  • the present invention provides a display panel and a preparation method thereof.
  • An auxiliary cathode is arranged in a non-display area, and the parallel connection of the auxiliary cathode and the cathode is used to reduce the cathode resistance of the device, so as to improve the IR-Drop phenomenon and increase the brightness of the panel. uniformity.
  • a method for preparing a display panel which can pattern an organic material to form a cover layer without using a fine mask, and utilize the characteristics of self-assembled materials to realize patterning of metal materials to form auxiliary electrodes, thereby reducing production costs.
  • FIG. 1 is a schematic structural diagram of a display panel provided by the present invention.
  • FIG. 2 is a schematic plan view of a display panel provided by the present invention.
  • FIG. 3 is a schematic plan view of a mask plate provided by the present invention.
  • array substrate 101 first electrode 102; pixel definition layer 103;
  • organic functional layer 104 organic functional layer 104; second electrode 105; cover layer 106;
  • auxiliary electrode 107 first layer 1031; second layer 1032;
  • Non-display area 120 is a region of a display.
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as “first” or “second” may expressly or implicitly include one or more of that feature. In the description of this application, unless stated otherwise, “plurality” means two or more. Additionally, the term “comprising” and any variations thereof are intended to cover non-exclusive inclusion.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a support connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication between two elements.
  • installed should be understood in a broad sense, for example, it may be a support connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication between two elements.
  • the present invention provides a display panel 100 including: an array substrate 101 , a first electrode 102 , a pixel definition layer 103 , an organic functional layer 104 , a second electrode 105 , a cover layer 106 and an auxiliary electrode 107 .
  • the array substrate 101 has a display area 110 and a non-display area 120 .
  • the first electrode 102 is disposed on the array substrate 101 and corresponds to the display area 110 , and the first electrode 102 is an anode.
  • the pixel definition layer 103 is disposed on the array substrate 101 and corresponds to the non-display area 120 .
  • the pixel definition layer 103 surrounds the first electrode 102 .
  • the area defined by the pixel definition layer 103 is the light-emitting area of the panel, that is, the sub-pixel area.
  • the organic functional layer 104 is disposed on the first electrode 102 and the pixel definition layer 103 .
  • the organic functional layer 104 includes a light-emitting functional layer 1041 and an electron transport layer 1042 .
  • the light-emitting functional layer 1041 is disposed on the first electrode 102 .
  • the light-emitting functional layer 1041 includes: a hole injection layer, a hole transport layer, and a light-emitting layer.
  • the hole transport layer is arranged on the hole injection layer; the light emitting layer is arranged on the hole transport layer.
  • the electron transport layer 1042 is disposed on the light-emitting functional layer 1041 and the pixel definition layer 103 .
  • the second electrode 105 is disposed on the organic functional layer 104, and the second electrode 105 includes a cathode.
  • the cover layer 106 is disposed on the second electrode 105 and corresponds to the display area 110 .
  • the auxiliary electrode 107 is disposed on the second electrode 105 and corresponds to the non-display area 120 , and the auxiliary electrode 107 is connected to the second electrode 105 in parallel.
  • the material of the cover layer 106 includes organic materials.
  • the material of the auxiliary electrode 107 includes metal material.
  • the cover layer 106 is prepared in the display area 110 by vacuum evaporation of organic materials and matching with a common mask.
  • the organic material in the non-display area 120 absorbs high energy and sublimates into a gaseous state, and gaseous molecules condense on the mask to form a film, so that the organic material in the non-emitting area is transferred to the mask.
  • the auxiliary electrode 107 is vapor-deposited on the entire surface of the display area 110 and the non-display area 120 with a metal material by vacuum evaporation. Due to the repulsion between the metal material evaporated on the display area 110 and the organic material in the display area 110, the metal material is automatically deposited in the non-display area 110.
  • the auxiliary electrode 107 is formed by film formation in the light-emitting region.
  • the pixel definition layer 103 includes: a first layer 1031 and a second layer 1032 .
  • the edge of the first layer 1031 covers the first electrode 102 ; the second layer 1032 is disposed on the first layer 1031 .
  • a double-layer pixel definition layer 103 is preferred, which can better define the organic material of the display area 110 .
  • FIG. 2 is a top view of the display panel 100 provided by the present invention.
  • Alignment marks 130 are arranged at four outer corners of the array substrate 101 , and the sub-pixels arranged in an array in the display area 110 include red sub-pixels R, green sub-pixels G and blue sub-pixels B.
  • the width and length of a single sub-pixel on the display panel 100 are respectively a and b.
  • the present invention provides a display panel 100.
  • An auxiliary cathode is provided in the non-display area 120, and the parallel connection of the auxiliary cathode and the cathode is used to reduce the cathode resistance of the device, so as to improve the IR-Drop phenomenon and improve the brightness uniformity of the panel.
  • the present invention also provides a preparation method of a display panel, which includes the following steps S1-S9.
  • the array substrate 101 has a display area 110 and a non-display area 120.
  • the mask includes a transparent area 210 and a non-transparent area. District 220.
  • the mask plate further includes: a light-transmitting substrate 201 , a masking layer 202 , a limiting support column 240 and a limiting frame 20 .
  • the light-transmitting substrate 201 has alignment marks 230 around it, and the material of the light-transmitting substrate 201 can be a high-transparency substrate such as quartz, glass, or plastic film.
  • the cover layer 202 is disposed on the transparent substrate 201 and corresponds to the non-transparent area 220 .
  • the cover layer 202 is made of materials with low light transmittance such as metal.
  • the masking layer 202 can be formed by a yellow light process. Specifically, the mask layer 202 is formed by patterning a yellow light process by depositing a low-transparency metal material on the light-transmitting substrate 201 .
  • each unit on the masking layer 202 corresponds to the sub-pixel unit in FIG. 2 respectively, that is, the shape and position of each masking layer 202 unit is the same as that of the sub-pixel unit.
  • each masking layer 202 unit is a' and b', respectively, and the corresponding size relationship with the sub-pixel unit is a'>0.8a and b'>0.8b (refer to Figure 2).
  • each masking layer 202 also needs to be correspondingly different.
  • the limiting frame 20 is disposed around the transparent substrate 201 and surrounds the cover layer 202 .
  • the limiting frame 20 corresponds to the effective area of the display panel 100 (refer to the area 10 in FIG. 2 ).
  • the shape and size of the limit support column 240 are not limited, and the position must be in the non-transparent area 220.
  • the limit frame 20 and the limit support column 240 have the same height to ensure that the distance between the mask plate and the display panel 100 is everywhere. Consistent.
  • a metal material is deposited on the array substrate 101 and patterned on the display area 110 to form the first electrode 102 .
  • the area defined by the pixel definition layer 103 is the light-emitting area of the panel, that is, the sub-pixel area.
  • a two-layer material layer is provided on the array substrate 101, a first yellow light is used to form a second layer 1032 structure, and then a second yellow light process is performed using the pattern of the second layer 1032 to form a double-layer structure.
  • the step of forming the organic functional layer 104 on the first electrode 102 and the pixel definition layer 103 specifically includes the following steps S401 to S402.
  • the organic functional layer 104 is formed by inkjet printing.
  • the second electrode 105 is formed by depositing a metal material on the display area 110 and the non-display area 120 and patterning the metal material on the non-display area 120 .
  • the mask is arranged above the array substrate 101 , the transparent area corresponds to the non-display area 120 , and the non-transparent area corresponds to the display area 110 .
  • the step of disposing the mask plate above the array substrate 101 specifically includes.
  • the alignment marks 230 of the mask are corresponding to the alignment marks 130 of the array substrate 101 , one side of the masking layer 202 faces the array substrate 101 , and the limiting frame 20 is provided on the The periphery of the array substrate 101 .
  • the mask plate is irradiated with laser light, and the light passes through the light-transmitting area 210 to the organic material in the non-display area 120, and the organic material in the non-display area 120 absorbs high energy and sublimates into a gaseous state, gaseous molecules
  • a film is condensed in the light-transmitting area (marked 203 in FIG. 4 is an organic material condensing film), and the organic material in the display area 110 forms the cover layer 106 .
  • step S8 needs to be performed in a vacuum environment, because the organic material is easier to sublimate when the laser is irradiated on the organic material in the vacuum environment, and the effect will be better.
  • the organic material is deposited above the second electrode 105, due to the difference between the organic material and the metal material, when the organic material in the non-display area 120 is removed by irradiating the laser, the organic material can be removed more easily and the metal material is not easily damaged. A wider selection of process windows.
  • the step of forming the auxiliary electrode 107 on the second electrode 105 of the non-display area 120 specifically includes the following steps.
  • the metal material is vacuum-evaporated on the display area 110 and the non-display area 120. Due to the repulsion between the organic material in the display area 110 and the metal material, the metal material is automatically formed into a film in the non-light-emitting area.
  • the auxiliary electrode 107 is described.
  • the cover layer 106 is formed without patterning the organic material without using a fine mask, and the auxiliary electrode 107 is formed by patterning the metal material by utilizing the characteristics of the self-assembled material, and then the auxiliary electrode 107 is formed by patterning the metal material. reduce manufacturing cost.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
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Abstract

一种显示面板及其制备方法，显示面板（100）包括：阵列基板（101）、第一电极（102）、像素定义层（103）、有机功能层（104）、第二电极（105）、覆盖层（106）以及辅助电极（107）。通过非显示区（120）设置辅助电极（107），利用辅助电极（107）与第二电极（105）的并联，降低器件第二电极（105）电阻，以改善IR-Drop现象，提高面板亮度均匀性。显示面板（100）的制备方法，不使用精细掩膜板对有机材料图案化形成覆盖层（106），并利用自组装材料特性，实现金属材料图案化形成辅助电极（107），进而降低生产成本。

Description

显示面板及其制备方法 技术领域
本发明涉及显示技术领域，特别是一种大尺寸顶发光OLED显示面板及其制备方法。
 背景技术
有机电致发光（OLED）显示装置主要包括底发光型（相对于基板向下出光）和顶发光型（相对于基板向上出光）。相较于底发光型OLED，顶发光OLED发光不经过基板，其光线从器件上方发出，基板上像素线路设计不会影响器件发光面积，避免薄膜晶体管（TFT）和金属线路面积与发光面积的竞争，能有效提高面板开口率，制备高亮度、高分辨率OLED显示面板。同时，顶发光型OLED在相同亮度下其工作电压更低，从而器件使用寿命更长，并且功耗更低。
 技术问题
在顶发光OLED显示装置中，由于光线需穿过器件阴极，为保证出光率，需增大阴极透明度。现有技术中，顶发光OLED器件阴极，一般采用低功函金属或合金（如Ag或Mg、Ag合金），或透明导电氧化物（TCO，如IZO）。但以上两种阴极都无可避免会出现，阴极方块电阻过大这一问题，通过采用金属或合金作器件阴极，为避免阴极对出光率的影响，会将阴极制作得较薄；而采用透明导电氧化物，由于材料本身透明度高则不用制作得很薄；
对于大尺寸顶发光OLED显示面板，器件阴极方块电阻过大，面板电压降（IR-Drop）严重，面板上离电源供给处越远处电压降越严重，导致面板四周与中心亮度差异大，造成面板严重的亮度不均匀现象。在面板过亮处，面板发热过大，易影响TFT基板正常工作。并且，阴极方块电阻过大，OLED器件驱动电压大，面板功耗增高。
 技术解决方案
本发明的其中一目的是提供一种显示面板，通过非显示区设置辅助阴极，利用辅助阴极与阴极的并联，降低器件阴极电阻，以改善IR-Drop现象，提高面板亮度均匀性。
所述显示面板，包括:阵列基板，具有显示区以及非显示区；第一电极，设于所述阵列基板上且对应所述显示区；像素定义层，设于所述阵列基板上且对应所述非显示区；有机功能层，设于所述第一电极以及所述像素定义层上；第二电极，设于所述有机功能层上；覆盖层，设于所述第二电极上且对应所述显示区；辅助电极，设于所述第二电极上且对应所述非显示区，所述辅助电极并联连接所述第二电极。
进一步地，所述覆盖层的材料包括有机材料；所述辅助电极的材料包括金属材料。
进一步地，所述有机功能层包括：发光功能层，设于所述第一电极上；电子传输层，设于所述发光功能层以及所述像素定义层上。
进一步地，所述发光功能层包括：空穴注入层；空穴传输层，设于所述空穴注入层上；发光层，设于所述空穴传输层上。
进一步地，所述像素定义层包括：第一层，其边缘覆盖所述第一电极；第二层，设于所述第一层上。
本发明的另一目的是提供一种显示面板的制备方法，不需要使用精细掩膜板就可以对有机材料图案化形成覆盖层，并利用自组装材料特性，实现金属材料图案化形成辅助电极，进而降低生产成本。
所述显示面板的制备方法包括：提供一阵列基板以及掩膜版，所述阵列基板具有显示区以及非显示区，所述掩膜板包括透光区以及非透光区；形成第一电极于所述显示区的阵列基板上，且对应所述显示区；形成像素定义层于所述非显示区的阵列基板上，且对应所述非显示区；形成有机功能层于所述第一电极以及所述像素定义层上；形成第二电极于所述有机功能层上；真空蒸镀一有机材料于所述第二电极上；将所述掩膜板设于所述阵列基板上方，所述透光区对应所述非显示区，所述非透光区对应所述显示区；激光照射所述掩膜板，光线透过所述透光区射向所述非显示区的有机材料，所述非显示区的有机材料吸收高能量而升华成气态，气态分子在所述透光区冷凝成膜，所述显示区的有机材料形成所述覆盖层；形成述辅助电极于所述非显示区的第二电极上，所述辅助电极并联连接所述第二电极。
进一步地，在形成所述辅助电极于所述非显示区的第二电极上的步骤中，具体包括：真空蒸镀金属材料于所述显示区以及非显示区，由于所述显示区的有机材料与所述金属材料的排斥作用，所述金属材料自主在所述非发光区成膜形成所述辅助电极。
进一步地，所述掩膜板包括：透光基板，具有对位标记；掩盖层，设于所述透光基板上且对应所述非透光区；限位框，设于所述透光基板的四周且围绕所述掩盖层。
进一步地，在将所述掩膜板设于所述阵列基板上方的步骤中，包括将所述掩膜板的对位标记与所述阵列基板的对位标记相对应，所述掩盖层的一侧朝向所述阵列基板，所述限位框设于所述阵列基板的外围。
进一步地，在形成像素定义层于所述非显示区的阵列基板上的步骤中，采用两道黄光制程制备双层像素定义层；在形成有机功能层于所述第一电极以及所述像素定义层上的步骤中，采用喷墨打印的方式制备所述有机功能层。
 有益效果
本发明的有益效果为：本发明提供一种显示面板及其制备方法，通过非显示区设置辅助阴极，利用辅助阴极与阴极的并联，降低器件阴极电阻，以改善IR-Drop现象，提高面板亮度均匀性。提供一种显示面板的制备方法，在并不使用精细掩膜板下对有机材料图案化形成覆盖层，并利用自组装材料特性，实现金属材料图案化形成辅助电极，进而降低生产成本。
 附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为本发明提供显示面板的结构示意图；
图2为本发明提供的显示面板的平面示意图；
图3为本发明提供的掩膜板的平面示意图；
图4为本发明提供的显示面板制备方法中步骤S7~S8的结构示意图
显示面板100；
阵列基板101；第一电极102；像素定义层103；
有机功能层104；第二电极105；覆盖层106；
辅助电极107；第一层1031；第二层1032；
发光功能层1041；电子传输层1042；显示区110；
非显示区120。
 本发明的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是支撑连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
如图1所示，本发明提供一种显示面板100，包括: 阵列基板101、第一电极102、像素定义层103、有机功能层104、第二电极105、覆盖层106以及辅助电极107。
所述阵列基板101具有显示区110以及非显示区120。
所述第一电极102设于所述阵列基板101上且对应所述显示区110，所述第一电极102为阳极。
所述像素定义层103设于所述阵列基板101上且对应所述非显示区120。
所述像素定义层103包围所述第一电极102。所述像素定义层103所限定的区域为面板的发光区域，也即是子像素区域。
所述有机功能层104设于所述第一电极102以及所述像素定义层103上。
所述有机功能层104包括：发光功能层1041以及电子传输层1042。
所述发光功能层1041设于所述第一电极102上。
所述发光功能层1041包括：空穴注入层、空穴传输层以及发光层。
所述空穴传输层设于所述空穴注入层上；所述发光层设于所述空穴传输层上。所述电子传输层1042设于所述发光功能层1041以及所述像素定义层103上。
所述第二电极105设于所述有机功能层104上，所述第二电极105包括阴极。
所述覆盖层106设于所述第二电极105上且对应所述显示区110。
所述辅助电极107设于所述第二电极105上且对应所述非显示区120，所述辅助电极107并联连接所述第二电极105。
所述覆盖层106的材料包括有机材料。所述辅助电极107的材料包括金属材料。
所述覆盖层106通过真空蒸镀有机材料并配合普通掩膜板在显示区110制备覆盖层106。而非显示区120的有机材料吸收高能量而升华成气态，气态分子在掩膜板上冷凝成膜，从而非发光区的有机材料转移至掩膜板上。
所述辅助电极107用真空蒸镀在显示区110以及非显示区120整面蒸镀金属材料，由于蒸镀在显示区110金属材料与显示区110的有机材料的排斥作用，金属材料自主在非发光区成膜形成所述辅助电极107。
在一实施例中，所述像素定义层103包括：第一层1031以及第二层1032。
所述第一层1031边缘覆盖所述第一电极102；所述第二层1032设于所述第一层1031上。本发明优选双层的像素定义层103，可以更好的限定显示区110的有机材料。
图2为本发明提供的显示面板100俯视图。所述阵列基板101外围四个角设置对位标记130，显示区110阵列设置的子像素，所述子像素包括红色子像素R，绿色子像素G以及蓝色子像素B。
其中，所述显示面板100上的单个子像素的宽度和长度分别为a和b。
本发明提供一种显示面板100，通过非显示区120设置辅助阴极，利用辅助阴极与阴极的并联，降低器件阴极电阻，以改善IR-Drop现象，提高面板亮度均匀性。
本发明还提供一种显示面板的制备方法，包括如下步骤S1~S9。
S1、提供一阵列基板101以及掩膜版，所述阵列基板101具有显示区110以及非显示区120，如图3以及图4所示，所述掩膜板包括透光区210以及非透光区220。
所述掩膜板还包括：透光基板201、掩盖层202、限位支撑柱240以及限位框20。
所述透光基板201四周具有对位标记230，所述透光基板201的材料可采用石英、玻璃、塑料膜等高透明度的基材。
所述掩盖层202设于所述透光基板201上且对应所述非透光区220。
所述掩盖层202采用金属等低透光性材料。
所述掩盖层202可由黄光制程形成，具体地，通过沉积低透光性金属材料于所述透光基板201上，在通过黄光制程图案化形成所述掩盖层202。
在一实施例中，所述掩盖层202上的每个单元与图2中的子像素单元分别对应，即每个掩盖层202单元的形状位置与子像素单元相同。
每个掩盖层202单元的宽度和长度分别为a’和b’，其与子像素单元对应的大小关系a’>0.8a且b’>0.8b（参照图2所示）。
在其他实施例中，若显示面板100上子像素分别大小不同，则每个掩盖层202的单元大小也需要对应不同。
所述限位框20设于所述透光基板201的四周且围绕所述掩盖层202。所述限位框20与所述显示面板100的有效区域相对应（参考图2的区域10内）。
本发明中，限位支撑柱240形状大小皆无限制，位置必须在非透光区220，限位框20与限位支撑柱240高度一致，保证掩膜板与显示面板100之间的距离处处一致。
S2、形成第一电极102于所述显示区110的阵列基板101上；所述第一电极102为阳极。
具体地，沉积一金属材料于所述阵列基板101上，图案化在所述显示区110形成第一电极102。
S3、形成像素定义层103于所述非显示区120的阵列基板101上；所述像素定义层103所限定的区域为面板的发光区域，也即是子像素区域。
在形成像素定义层103于所述非显示区120的阵列基板101上的步骤中，采用两道黄光制程制备双层像素定义层103。
具体地，在阵列基板101上设置双层的材料层，先第一道黄光形成第二层1032结构，再借用所述第二层1032的图案进行第二道黄光制程形成双层结构。
S4、形成有机功能层104于所述第一电极102以及所述像素定义层103上。
具体地，所述形成有机功能层104于所述第一电极102以及所述像素定义层103上的步骤中，具体包括如下步骤S401~ S402。
所述形成有机功能层104通过喷墨打印的方式制备得到。
S401、形成有机功能层104设于所述第一电极102上。具体包括如下步骤S4011~ S4013。
S4011、形成一空穴注入层于所述第一电极102上。
S4012、形成一空穴传输层于所述空穴注入层上；
S4013、形成一发光层于所述空穴传输层上。
S402、形成一电子传输层1042于所述发光功能层1041以及所述像素定义层103上。
S5、形成第二电极105于所述有机功能层104上。
具体地，通过沉积金属材料于所述显示区110以及非显示区120，并图案化在所述非显示区120形成所述第二电极105。
S6、真空蒸镀一有机材料于所述第二电极105上。
S7、如图4所示，将所述掩膜板设于所述阵列基板101上方，所述透光区对应所述非显示区120，所述非透光区对应所述显示区110。
将所述掩膜板设于所述阵列基板101上方的步骤中，具体包括。
将所述掩膜板的对位标记230与所述阵列基板101的对位标记130相对应，所述掩盖层202的一侧朝向所述阵列基板101，所述限位框20设于所述阵列基板101的外围。
S8、激光照射所述掩膜板，光线透过所述透光区210射向所述非显示区120的有机材料，所述非显示区120的有机材料吸收高能量而升华成气态，气态分子在所述透光区冷凝成膜（图4中标记203为有机材料冷凝成膜），所述显示区110的有机材料形成所述覆盖层106。
在一实施例中，步骤S8需要在真空环境中进行，因为在真空环境中照射激光在有机材料上，有机材料更容易升华，效果会更好。
另外，由于有机材料沉积在第二电极105的上方，由于有机材料与金属材料的区别，采用照射激光去除非显示区120的有机材料时，能更容易干净去除有机材料且不易损伤金属材料，激光的工艺窗口的选择范围更大。
S9、形成辅助电极107于所述非显示区120的第二电极105上，所述辅助电极107并联连接所述第二电极105。
在形成所述辅助电极107于所述非显示区120的第二电极105上的步骤中，具体包括如下。
真空蒸镀金属材料于所述显示区110以及非显示区120，由于所述显示区110的有机材料与所述金属材料的排斥作用，所述金属材料自主在所述非发光区成膜形成所述辅助电极107。
本发明提供的一种显示面板的制备方法，在并不使用精细掩膜板下对有机材料图案化下形成覆盖层106，并利用自组装材料特性，实现金属材料图案化形成辅助电极107，进而降低生产成本。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种显示面板，其中，包括:
    阵列基板，具有显示区以及非显示区；
    第一电极，设于所述阵列基板上且对应所述显示区；
    像素定义层，设于所述阵列基板上且对应所述非显示区；
    有机功能层，设于所述第一电极以及所述像素定义层上；
    第二电极，设于所述有机功能层上；
    覆盖层，设于所述第二电极上且对应所述显示区；
    辅助电极，设于所述第二电极上且对应所述非显示区，所述辅助电极并联连接所述第二电极。
  2. 根据权利要求1所述的显示面板，其中，
    所述覆盖层的材料包括有机材料；
    所述辅助电极的材料包括金属材料。
  3. 根据权利要求1所述的显示面板，其中，
    所述有机功能层包括：
    发光功能层，设于所述第一电极上；
    电子传输层，设于所述发光功能层以及所述像素定义层上。
  4. 根据权利要求3所述的显示面板，其中，
    所述发光功能层包括：
    空穴注入层；
    空穴传输层，设于所述空穴注入层上；
    发光层，设于所述空穴传输层上。
  5. 根据权利要求1所述的显示面板，其中，
    所述像素定义层包括：
    第一层，其边缘覆盖所述第一电极；
    第二层，设于所述第一层上。
  6. 一种显示面板的制备方法，其中，包括：
    提供一阵列基板以及掩膜版，所述阵列基板具有显示区以及非显示区，所述掩膜板包括透光区以及非透光区；
    形成第一电极于所述阵列基板上，且对应所述显示区；
    形成像素定义层于所述阵列基板上，且对应所述非显示区；
    形成有机功能层于所述第一电极以及所述像素定义层上；
    形成第二电极于所述有机功能层上；
    真空蒸镀一有机材料于所述第二电极上；
    将所述掩膜板设于所述阵列基板上方，所述透光区对应所述非显示区，所述非透光区对应所述显示区；
    激光照射所述掩膜板，光线透过所述透光区射向所述非显示区的有机材料，所述非显示区的有机材料吸收高能量而升华成气态，气态分子在所述透光区冷凝成膜，所述显示区的有机材料形成所述覆盖层；
    形成辅助电极于所述非显示区的第二电极上，所述辅助电极并联连接所述第二电极。
  7. 根据权利要求6所述的显示面板的制备方法，其中，
    在形成所述辅助电极于所述非显示区的第二电极上的步骤中，具体包括：
    真空蒸镀金属材料于所述显示区以及非显示区，由于所述显示区的有机材料与所述金属材料的排斥作用，所述金属材料自主在所述非发光区成膜形成所述辅助电极。
  8. 根据权利要求6所述的显示面板的制备方法，其中，
    所述掩膜板包括：
    透光基板，具有对位标记；
    掩盖层，设于所述透光基板上且对应所述非透光区；
    限位框，设于所述透光基板的四周且围绕所述掩盖层。
  9. 根据权利要求8所述的显示面板的制备方法，其中，
    在将所述掩膜板设于所述阵列基板上方的步骤中，包括
    将所述掩膜板的对位标记与所述阵列基板的对位标记相对应，所述掩盖层的一侧朝向所述阵列基板，所述限位框设于所述阵列基板的外围。
  10. 根据权利要求6所述的显示面板的制备方法，其中，
    在形成像素定义层于所述非显示区的阵列基板上的步骤中，采用两道黄光制程制备双层像素定义层；
    在形成有机功能层于所述第一电极以及所述像素定义层上的步骤中，采用喷墨打印的方式制备所述有机功能层。
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CN118660480A (zh) * 2023-06-28 2024-09-17 合肥维信诺科技有限公司 显示面板及其制备方法、显示装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112510072B (zh) * 2020-12-11 2022-10-28 云谷（固安）科技有限公司 显示面板、显示面板的制备方法及显示装置
CN112687825A (zh) * 2020-12-24 2021-04-20 深圳市华星光电半导体显示技术有限公司 一种oled显示面板的制备方法及oled显示面板
CN112992991B (zh) 2021-02-03 2023-04-07 合肥京东方卓印科技有限公司 一种显示基板及显示装置
CN113097416A (zh) * 2021-03-30 2021-07-09 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN114203788B (zh) * 2021-12-10 2023-06-30 深圳市华星光电半导体显示技术有限公司 显示面板、显示装置和显示面板的制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140145152A1 (en) * 2012-11-26 2014-05-29 C/O Samsung Display Co., Ltd. Display device and organic light emitting display device
CN103855184A (zh) * 2012-11-29 2014-06-11 三星显示有限公司 有机发光显示装置和制造该装置的方法
CN104183617A (zh) * 2013-05-28 2014-12-03 三星显示有限公司 有机发光显示装置及其制造方法
CN104218051A (zh) * 2013-05-29 2014-12-17 三星显示有限公司 有机发光显示装置
CN106449726A (zh) * 2016-12-27 2017-02-22 上海天马有机发光显示技术有限公司 一种oled显示装置及其制作方法
CN109755286A (zh) * 2019-02-25 2019-05-14 深圳市华星光电半导体显示技术有限公司 一种oled显示面板及其制备方法
CN110931653A (zh) * 2019-11-27 2020-03-27 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101931176B1 (ko) * 2012-06-11 2018-12-21 삼성디스플레이 주식회사 유기 발광 표시장치 및 그 제조방법
KR102092924B1 (ko) * 2013-08-05 2020-03-25 삼성디스플레이 주식회사 유기 발광 표시 장치
CN107565063B (zh) * 2017-07-24 2019-04-30 武汉华星光电半导体显示技术有限公司 Oled背板的制作方法与oled面板的制作方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140145152A1 (en) * 2012-11-26 2014-05-29 C/O Samsung Display Co., Ltd. Display device and organic light emitting display device
CN103855184A (zh) * 2012-11-29 2014-06-11 三星显示有限公司 有机发光显示装置和制造该装置的方法
CN104183617A (zh) * 2013-05-28 2014-12-03 三星显示有限公司 有机发光显示装置及其制造方法
CN104218051A (zh) * 2013-05-29 2014-12-17 三星显示有限公司 有机发光显示装置
CN106449726A (zh) * 2016-12-27 2017-02-22 上海天马有机发光显示技术有限公司 一种oled显示装置及其制作方法
CN109755286A (zh) * 2019-02-25 2019-05-14 深圳市华星光电半导体显示技术有限公司 一种oled显示面板及其制备方法
CN110931653A (zh) * 2019-11-27 2020-03-27 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118660480A (zh) * 2023-06-28 2024-09-17 合肥维信诺科技有限公司 显示面板及其制备方法、显示装置

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