WO2022017486A1 - Résonateur réglable et son procédé de fabrication - Google Patents
Résonateur réglable et son procédé de fabrication Download PDFInfo
- Publication number
- WO2022017486A1 WO2022017486A1 PCT/CN2021/108055 CN2021108055W WO2022017486A1 WO 2022017486 A1 WO2022017486 A1 WO 2022017486A1 CN 2021108055 W CN2021108055 W CN 2021108055W WO 2022017486 A1 WO2022017486 A1 WO 2022017486A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- upper electrode
- layer
- lower electrode
- resonant cavity
- electrode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 10
- 229910002113 barium titanate Inorganic materials 0.000 claims description 10
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 10
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 150000004767 nitrides Chemical group 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- YSZKOFNTXPLTCU-UHFFFAOYSA-N barium lithium Chemical compound [Li].[Ba] YSZKOFNTXPLTCU-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 229910000640 Fe alloy Inorganic materials 0.000 claims 1
- 229910000846 In alloy Inorganic materials 0.000 claims 1
- 229910000861 Mg alloy Inorganic materials 0.000 claims 1
- 229910001182 Mo alloy Inorganic materials 0.000 claims 1
- 229910000929 Ru alloy Inorganic materials 0.000 claims 1
- 229910001362 Ta alloys Inorganic materials 0.000 claims 1
- 229910001069 Ti alloy Inorganic materials 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 claims 1
- 229910001297 Zn alloy Inorganic materials 0.000 claims 1
- 229910001093 Zr alloy Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 110
- 230000008569 process Effects 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
Definitions
- the present invention relates to an adjustable resonator and its manufacturing method, in particular to an adjustable adjustable resonator and its manufacturing method.
- RF filters are used as an intermediary to filter specific frequency signals to reduce signal interference in different frequency bands, and to implement functions such as image cancellation, spurious filtering, and channel selection in wireless transceivers.
- the design of RF front-end is developing towards miniaturization, low power consumption and integration, and the market has higher and higher requirements for filtering performance. Due to the small size, high operating frequency, low power consumption, high quality factor (Q value), direct With the characteristics of output frequency signal and compatibility with CMOS process, it has become an important device in the field of radio frequency communication and is widely used.
- FBAR is a thin film device with an electrode-piezoelectric film-electrode sandwich structure fabricated on a substrate material.
- the structure of FBAR has cavity type, Bragg reflection type (SMR) and backside etching type.
- SMR Bragg reflection type
- the cavity type FBAR has higher Q value, lower loss and higher electromechanical coupling coefficient; compared with the backside etching type FBAR, it does not need to remove a large area of the substrate and has higher mechanical strength. Therefore, cavity-type FBAR is the first choice for integration on CMOS devices.
- the resonant frequency of the device is determined accordingly.
- a large number of resonant cavities of different sizes must be fabricated on the same substrate, which unnecessarily increases the size of the system, and in some cases The resonator works while most of the other resonators are idle, resulting in low system utilization.
- the purpose of the present invention is to provide a tunable resonator and a preparation method thereof that overcome the above technical obstacles.
- the present invention provides a tunable resonator, comprising:
- the resonant cavity, in the substrate at least includes a first resonant cavity in the center and a second resonant cavity in the periphery;
- the first stack structure on the first resonant cavity, sequentially includes a first part of the lower electrode, a first part of the piezoelectric layer and a first part of the upper electrode;
- the second stack structure on the second resonant cavity, sequentially includes a second part of the lower electrode, a second part of the piezoelectric layer and a second part of the upper electrode;
- a first insulating layer, on the substrate, is located between the first portion of the lower electrode and the second portion of the lower electrode.
- the first resonant cavity, the first part of the lower electrode and the first part of the upper electrode are polygonal, circular or elliptical in plan view; preferably, the size of the top of the first resonant cavity is larger than that of the first part of the lower electrode or the first part of the upper electrode , optionally, the size of the top of the second resonant cavity is larger than the size of the second part of the lower electrode or the second part of the upper electrode;
- the two parts are edge-aligned.
- the resonance state including at least one of amplitude, frequency, phase or a combination thereof.
- the substrate material is Si, SOI, Ge, GeOI, compound semiconductor; optionally, the materials of the first part of the piezoelectric layer and the second part of the piezoelectric layer are ZnO, AlN, BST (barium strontium titanate), BT ( barium titanate), PZT (lead zirconate titanate), PBLN (lead barium lithium niobate), PT (lead titanate), and further preferably the piezoelectric material is doped with rare earth elements; optionally, the first or second The material of the insulating layer is nitride, such as silicon nitride, silicon oxynitride, aluminum nitride, boron nitride; optionally, the first part of the lower electrode, the second part of the lower electrode, the first part of the upper electrode, the second part of the upper electrode Any one of the materials is selected from Mo, W, Ru, Al, Cu, Ti, Ta, In, Zn, Zr, Fe, M
- the present invention also provides a method for manufacturing a tunable resonator, comprising:
- a sacrificial layer in the substrate including a first sacrificial layer pattern in the center and a second sacrificial layer pattern in the periphery;
- a lower electrode layer is formed on the sacrificial layer, comprising a first portion of the lower electrode on the first sacrificial layer pattern and a second portion of the lower electrode on the second sacrificial layer pattern;
- a piezoelectric layer on the first insulating layer and the lower electrode layer, including at least a first part of the piezoelectric layer above the first sacrificial layer pattern and a second part of the piezoelectric layer above the second sacrificial layer pattern;
- an upper electrode layer on the piezoelectric layer including a first part of the upper electrode on the first part of the piezoelectric layer, and a second part of the upper electrode on the second part of the piezoelectric layer;
- the sacrificial layer is removed, leaving a cavity in the substrate, including a first cavity in the center and a second cavity in the periphery.
- the upper electrode layer After forming the upper electrode layer, it further includes, at least forming a second insulating layer between the first part of the upper electrode and the second part of the upper electrode; preferably, the first part of the piezoelectric layer and the second part of the piezoelectric layer are connected, or by the second insulating layer The layers are spaced apart.
- the first resonant cavity, the first part of the lower electrode and the first part of the upper electrode are polygonal, circular or elliptical in plan view; preferably, the size of the top of the first resonant cavity is larger than that of the first part of the lower electrode or the first part of the upper electrode , optionally, the size of the top of the second resonant cavity is larger than the size of the second part of the lower electrode or the second part of the upper electrode;
- the two parts are edge-aligned.
- the substrate material is Si, SOI, Ge, GeOI, compound semiconductor; optionally, the materials of the first part of the piezoelectric layer and the second part of the piezoelectric layer are ZnO, AlN, BST (barium strontium titanate), BT ( barium titanate), PZT (lead zirconate titanate), PBLN (lead barium lithium niobate), PT (lead titanate), and further preferably the piezoelectric material is doped with rare earth elements; optionally, the first or second The material of the insulating layer is nitride, such as silicon nitride, silicon oxynitride, aluminum nitride, boron nitride; optionally, the first part of the lower electrode, the second part of the lower electrode, the first part of the upper electrode, the second part of the upper electrode Any one of the materials is selected from Mo, W, Ru, Al, Cu, Ti, Ta, In, Zn, Zr, Fe, M
- the auxiliary resonator is added around the main resonator to actively adjust the resonance state, which is beneficial to improve the integration degree and efficiency of the device.
- FIG. 1 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention
- FIG. 2 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention
- FIG. 3 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention
- FIG. 4 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention
- FIG. 5 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention
- FIG. 6 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention
- FIG. 7 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention
- FIG. 8 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention
- FIG. 9 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention.
- Figure 10 shows a plan view of a resonator top electrode according to an embodiment of the present invention.
- a sacrificial layer 2 is formed in the substrate 1 .
- the material can be bulk Si or silicon-on-insulator (SOI) or bulk Ge, GeOI to be compatible with CMOS process and integrated with other digital and analog circuits, and can also be a compound for MEMS, optoelectronic devices, power devices Semiconductors such as GaN, GaAs, SiC, InP, GaP, etc., further preferably, the substrate 1 is a single crystal material.
- the substrate 1 is etched to form a plurality of cavities (not shown in FIG. 1 ), and a sacrificial layer 2 is deposited to fill it.
- the etching process is preferably anisotropic dry etching or wet etching, such as reactive ion etching with a fluorocarbon-based etching gas, or wet etching with TMAH.
- the deposition process is a low temperature process such as LPCVD, APCVD, PECVD (deposition temperature is lower than 500 degrees Celsius, preferably 100 to 400 degrees Celsius), and the sacrificial layer 2 is made of silicon oxide-based materials, such as boron-doped silicon oxide (BSG), phosphorus-doped silicon oxide ( PSG), undoped silicon oxide (USG), porous silicon oxide, etc., so that the residual thermal stress in the substrate 1 can be reduced, and it is beneficial to improve the speed of subsequent etching and removal to save time and cost.
- BSG boron-doped silicon oxide
- PSG phosphorus-doped silicon oxide
- USG undoped silicon oxide
- porous silicon oxide etc.
- the sacrificial layer 2 includes at least two parts, that is, the first part 2 a is used to fill the main resonant cavity, and the second part 2 b is used to fill the secondary resonant cavity around the main resonant cavity.
- the sacrificial layer 2 is processed by a CMP planarization process until the surface of the substrate 1 is exposed.
- the central part of the cavity formed by etching the substrate 1, that is, the projection of the main resonant cavity in a plan view is a polygon (such as a quadrilateral, pentagon, hexagon, octagon, etc.
- the 1S is used as a subsequent mechanical support or isolation structure, and the first part 2a and the second part 2b of the filled sacrificial layer also have corresponding morphologies.
- a patterned lower electrode 3 is formed on the substrate 1 .
- a conductive material layer is formed, such as Mo, W, Ru, Al, Cu, Ti, Ta, In, Zn, Zr, Fe, Mg and other metal elements or metal alloys , or conductive oxides of these metals, conductive nitrides, and any combination of the above materials.
- a seed layer (not shown) is further formed on the substrate 1 and the sacrificial layer 2 to improve the crystal orientation of the electrode layer and the upper functional layer.
- the seed layer is AlN, HfN, HfAlN, TiN, TaN, etc., and preferably can be used as a barrier layer preventing the downward migration of the lower electrode metal material to avoid affecting the top of the resonant cavity and the bottom The interface state between the film layers.
- a photolithography-etching process is used, such as spin coating photoresist, exposure and development to form a photoresist pattern, and the photoresist pattern is used as a mask to etch the conductive material layer to pattern the conductive material layer, and form Figure 2 Lower electrode 3 shown.
- the lower electrode 3 includes at least a first portion 3a at the center, and a second portion 3b at the periphery.
- the first part 3a of the lower electrode is the same as the first part 2a of the sacrificial layer and the main resonant cavity.
- the projection in the plan view is a polygon (such as a quadrilateral, a pentagon, a hexagon, an octagon, etc.), a circle, an ellipse, etc.
- the second portion 3b is an annular structure concentric with the first portion 3a with a gap therebetween. It is worth noting that, in order to ensure sufficient insulation isolation between the main resonator and the lower electrode of the adjustment sub-resonator, the distance between the second peripheral part 3b and the central first part 3a should be at least greater than that of the main and auxiliary resonators.
- the edge of the first portion 3a of the lower electrode is indented inwardly from the edge of the first portion 2a of the sacrificial layer by 0.1-10 microns, preferably 0.05-5 microns, optimally 1-3 microns. Further or similarly, the edge of the second portion 3b of the lower electrode is also retracted inward by the same distance from the edge of the second portion 2b of the sacrificial layer.
- an insulating layer 4 is filled between the lower electrode patterns.
- the insulating dielectric material is filled between the first part 3a and the second part 3b of the lower electrode layer to form an annular insulating layer pattern 4 .
- the material of the insulating layer 4 is different from that of the sacrificial layer 2, so as to avoid excessive erosion during the subsequent process of removing the sacrificial layer 2 to form a resonant cavity.
- the material of the insulating layer 4 is nitride, such as silicon nitride, silicon oxynitride, aluminum nitride, boron nitride, and the like.
- the insulating layer is processed by a planarization process of etchback or CMP until the lower electrode patterns 3a and 3b are exposed.
- the piezoelectric layer 5 is formed on the lower electrode patterns 3 a and 3 b and the insulating layer 4 .
- a process such as PECVD, UHVCVD, HDPCVD, MOCVD, MBE, ALD, magnetron sputtering, thermal evaporation, etc. is used to form the piezoelectric layer 5 , preferably the material of which is different from the insulating layer 4 .
- the piezoelectric layer 5 is made of materials such as ZnO, AlN, BST (barium strontium titanate), BT (barium titanate), PZT (lead zirconate titanate), PBLN (lead barium lithium niobate) ), PT (lead titanate) and other piezoelectric ceramic materials, and preferably, the piezoelectric layer 5 is doped with rare earth elements, such as scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Any one of thulium (Tm), ytterbium (Yb), and lutetium (Lu) and
- rare earth elements such as scandium
- the piezoelectric layer 5 is doped with Sc, or mixed with Sc and Yb, or doped with Sc and Gd, or mixed with Sc, Yb, and Sm.
- the upper conductive material layer 6 is formed on the piezoelectric layer 5 .
- the preparation process and materials of the conductive material layer 6 are the same as those of the lower electrode layer 3 , and details are not repeated here.
- the conductive material layer 6 is patterned to form an upper electrode first portion 6a and an upper electrode second portion 6b.
- the photoresist is spin-coated, a photoresist pattern is formed through an exposure and development process, and the conductive material layer 6 is etched with the photoresist pattern as a mask to form a first portion 6a of an upper electrode located in the center, and a second annular upper electrode located in the periphery. Section 6b.
- the edge of the first portion 6a of the upper electrode is aligned with the edge of the first portion 3a of the lower electrode, and the edge of the second portion 6b of the upper electrode is aligned with the edge of the second portion 3b of the lower electrode, so that there is a gap between the first portion 6a and the second portion 6b.
- the photoresist pattern is preferably removed by a wet etching process.
- a second insulating layer 7 is formed on the piezoelectric layer 5 and the upper electrode patterns 6a/6b.
- the material and process of the second insulating layer 7 are the same as or similar to those of the insulating layer 4 , and details are not repeated here.
- the sacrificial layer pattern 2 is removed, leaving a resonant cavity in the substrate 1 .
- a wet etchant is applied to remove the sacrificial layer pattern through release holes (not shown) provided at the periphery of the device.
- an HF-based etching solution such as dHF (diluted HF), dBOE (slow release etchant, a mixture of HF and NH 4 F) to remove the sacrificial layer pattern 2, leaving multiple resonant cavities with at least It comprises a first portion 1c in the center, and a second portion 1c' in an annular shape in the periphery.
- the width of the insulating layer 4 is larger than the width of the top of the support structure 1S, and the width of the first part 3a and the second part 3b of the lower electrode is smaller than that of the sacrificial layer patterns 2a and 2b, so the width of the main resonant cavity 1c left is larger than that of the first part 3a and the second part 3b of the lower electrode.
- the width of the sub-resonant cavity 1c' is larger than that of the second portion 3b of the lower electrode.
- the second insulating layer 7 is processed by a planarization process such as etchback, CMP, etc., until the upper electrode patterns 6a and 6b are exposed.
- the finally formed resonator structure is shown in FIG. 8 and includes a substrate 1, a first part 1c of the resonator cavity, a second part 1c' of the resonator cavity located in the substrate 1, a first part 3a of the lower electrode above the first part 1c of the resonator cavity,
- the piezoelectric layer 5 and the first part 6a of the upper electrode constitute the main resonator, and the second part 3b of the lower electrode, the piezoelectric layer 5, and the second part 6b of the upper electrode above the second part 1c' of the resonant cavity constitute the sub-resonator.
- the distribution morphology of the upper electrodes 6a/6b and the second insulating layer 7 is shown in FIG. 10, which is the same as or conformal or similar to the lower electrodes 3a/3b and the insulating layer pattern 4, and both are concentric polygons or circles, ellipses
- the second insulating layer 7 is sandwiched between the central part of the upper electrode, that is, the first part 6a and the peripheral second part 6b, and the second part 6b has at least one gap to accommodate the lead-out part of the first part 6a. Pass through the second insulating layer 7 under wrapping to realize external electrical connection.
- the device by applying a signal different from that of the main resonator to the electrodes (3b, 6b) of the sub-resonator, for example, at least one of amplitude, frequency, and phase is different, so that the sub-resonator around the main resonator generates a different signal from the main resonator.
- a signal different from that of the main resonator to the electrodes (3b, 6b) of the sub-resonator for example, at least one of amplitude, frequency, and phase is different, so that the sub-resonator around the main resonator generates a different signal from the main resonator.
- the different vibrations of the resonator and the superposition of two mechanical waves with different states change the final signal waveform.
- the vibration state of the sub-resonator can be flexibly changed in real time by controlling the input waveform of the sub-resonator, thereby affecting the working state of the entire resonator, so as to adjust the frequency response of the entire resonator system when needed, which is conducive to saving Chip area, improve integration, reduce product cost, and improve device utilization.
- the piezoelectric layers 5 are no longer connected as a whole, but the second insulating layer 7 penetrates through the support structure 1S directly on the surface of the substrate 1, thereby The insulation isolation effect between the electrodes of the main resonator and the sub-resonator is improved, and the lateral crosstalk of signals between the upper and lower electrodes of different resonators is prevented.
- the manufacturing process is basically the same as that shown in FIG. 1 to FIG. 8, except that in the process steps shown in FIG. 5, after etching and patterning the upper electrodes 6a and 6b, the photoresist pattern or the upper electrode pattern is used as a mask.
- the mold continue to etch the piezoelectric layer 5 until the support structure 1S on the surface of the substrate 1 is exposed, and in the process steps shown in FIG. insulating layer 7.
- the resulting device structure is similar to that shown in FIG. 8, the difference is that the second insulating layer 7 is not only sandwiched between the first part 6a and the second part 6b of the upper electrode, but also penetrates the piezoelectric layer 5 to the surface of the substrate, and is sandwiched therebetween. between the first part 3a and the second part 3b of the lower electrode.
- the auxiliary resonator is added around the main resonator to actively adjust the resonance state, which is beneficial to improve the integration degree and efficiency of the device.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010728289.4A CN111786636A (zh) | 2020-07-24 | 2020-07-24 | 可调式谐振器及其制造方法 |
CN202010728289.4 | 2020-07-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022017486A1 true WO2022017486A1 (fr) | 2022-01-27 |
Family
ID=72763437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2021/108055 WO2022017486A1 (fr) | 2020-07-24 | 2021-07-23 | Résonateur réglable et son procédé de fabrication |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN111786636A (fr) |
WO (1) | WO2022017486A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024078171A1 (fr) * | 2022-10-14 | 2024-04-18 | 浙江大学 | Transducteur ultrasonore micro-usiné piézoélectrique multifréquence et procédé de fabrication |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111786636A (zh) * | 2020-07-24 | 2020-10-16 | 苏州汉天下电子有限公司 | 可调式谐振器及其制造方法 |
CN113258899B (zh) * | 2021-05-18 | 2024-06-04 | 苏州汉天下电子有限公司 | 一种薄膜体声波谐振器及其制造方法 |
CN115178314B (zh) * | 2022-08-08 | 2024-06-14 | 深圳市麦科思技术有限公司 | 一种微机电系统微流体装置及其制作方法 |
CN115321470A (zh) * | 2022-08-08 | 2022-11-11 | 深圳市麦科思技术有限公司 | 一种mems微流体装置及其制作方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4529904A (en) * | 1983-03-16 | 1985-07-16 | International Standard Electric Corporation | Piezo-electric terminal station for communications system |
US4870313A (en) * | 1985-04-11 | 1989-09-26 | Toyo Communication Equipment Co., Ltd. | Piezoelectric resonators for overtone oscillations |
US20030001689A1 (en) * | 2001-07-02 | 2003-01-02 | Murata Manufacturing Co., Ltd | Piezoelectric resonator, manufacturing method for the same, piezoelectric filter, manufacturing method for the same, duplexer, and electronic communication device |
CN101069344A (zh) * | 2004-12-07 | 2007-11-07 | 松下电器产业株式会社 | 薄膜弹性波谐振器 |
US7408429B2 (en) * | 2005-06-17 | 2008-08-05 | Matsushita Electric Industrial Co., Ltd. | Coupled FBAR filter |
CN105339297A (zh) * | 2013-06-27 | 2016-02-17 | 索泰克公司 | 用于制造包括填充有牺牲材料的腔体的半导体结构的方法 |
CN111786636A (zh) * | 2020-07-24 | 2020-10-16 | 苏州汉天下电子有限公司 | 可调式谐振器及其制造方法 |
-
2020
- 2020-07-24 CN CN202010728289.4A patent/CN111786636A/zh active Pending
-
2021
- 2021-07-23 WO PCT/CN2021/108055 patent/WO2022017486A1/fr active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4529904A (en) * | 1983-03-16 | 1985-07-16 | International Standard Electric Corporation | Piezo-electric terminal station for communications system |
US4870313A (en) * | 1985-04-11 | 1989-09-26 | Toyo Communication Equipment Co., Ltd. | Piezoelectric resonators for overtone oscillations |
US20030001689A1 (en) * | 2001-07-02 | 2003-01-02 | Murata Manufacturing Co., Ltd | Piezoelectric resonator, manufacturing method for the same, piezoelectric filter, manufacturing method for the same, duplexer, and electronic communication device |
CN101069344A (zh) * | 2004-12-07 | 2007-11-07 | 松下电器产业株式会社 | 薄膜弹性波谐振器 |
US7408429B2 (en) * | 2005-06-17 | 2008-08-05 | Matsushita Electric Industrial Co., Ltd. | Coupled FBAR filter |
CN105339297A (zh) * | 2013-06-27 | 2016-02-17 | 索泰克公司 | 用于制造包括填充有牺牲材料的腔体的半导体结构的方法 |
CN111786636A (zh) * | 2020-07-24 | 2020-10-16 | 苏州汉天下电子有限公司 | 可调式谐振器及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024078171A1 (fr) * | 2022-10-14 | 2024-04-18 | 浙江大学 | Transducteur ultrasonore micro-usiné piézoélectrique multifréquence et procédé de fabrication |
Also Published As
Publication number | Publication date |
---|---|
CN111786636A (zh) | 2020-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2022017486A1 (fr) | Résonateur réglable et son procédé de fabrication | |
KR100616508B1 (ko) | Fbar 소자 및 그 제조방법 | |
KR100398363B1 (ko) | Fbar 소자 및 그 제조방법 | |
CN111162746B (zh) | 一种体声波谐振器的平坦压电层结构及制作工艺 | |
US7128941B2 (en) | Method for fabricating film bulk acoustic resonator (FBAR) device | |
CN112117986B (zh) | 谐振器制造方法 | |
CN112087209B (zh) | 谐振器制造方法 | |
CN112071975B (zh) | 平坦化fbar谐振器制备方法 | |
CN111510092B (zh) | 体声波谐振器及其制造方法 | |
JP2007535279A (ja) | 集積化された多周波数帯圧電薄膜共振器(fbar)の形成 | |
CN112087217B (zh) | Q值提升的fbar谐振器制造方法 | |
EP4160916A1 (fr) | Structure de cavité de résonateur acoustique de volume et procédé de fabrication | |
WO2022062911A1 (fr) | Ensemble résonateur acoustique de volume ayant une couche creuse, et ensemble, procédé de fabrication, filtre, et dispositif électronique | |
WO2022063053A1 (fr) | Procédé de fabrication de résonateur et résonateur | |
US20060202769A1 (en) | Piezoelectric thin film device and method of producing the same | |
JP2024533898A (ja) | バルク音響共振器及びその製造方法、フィルタ、電子機器 | |
US7119638B2 (en) | Film bulk acoustic resonator having an air gap and a method for manufacturing the same | |
CN111769809B (zh) | 一种新的体声波谐振器及其制造方法 | |
TWI797693B (zh) | 體聲波共振器及其形成方法 | |
WO2022001860A1 (fr) | Résonateur à ondes acoustiques de volume et son procédé de fabrication, filtre et dispositif électronique | |
US20230387883A1 (en) | Resonator and method of preparing a resonator | |
WO2022063149A1 (fr) | Procédé de fabrication de résonateur fbar | |
CN110635776B (zh) | 谐振器及其制造方法 | |
WO2022228486A1 (fr) | Résonateur acoustique de volume et son procédé de fabrication, filtre et dispositif électronique | |
CN212543731U (zh) | 可调式谐振器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21846290 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21846290 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21846290 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 28.09.2023) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21846290 Country of ref document: EP Kind code of ref document: A1 |