WO2022228486A1 - Résonateur acoustique de volume et son procédé de fabrication, filtre et dispositif électronique - Google Patents

Résonateur acoustique de volume et son procédé de fabrication, filtre et dispositif électronique Download PDF

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Publication number
WO2022228486A1
WO2022228486A1 PCT/CN2022/089707 CN2022089707W WO2022228486A1 WO 2022228486 A1 WO2022228486 A1 WO 2022228486A1 CN 2022089707 W CN2022089707 W CN 2022089707W WO 2022228486 A1 WO2022228486 A1 WO 2022228486A1
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WO
WIPO (PCT)
Prior art keywords
layer
top electrode
resonator
conductive
inner end
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Application number
PCT/CN2022/089707
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English (en)
Chinese (zh)
Inventor
庞慰
郝龙
徐洋
马晓丹
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诺思(天津)微系统有限责任公司
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Publication of WO2022228486A1 publication Critical patent/WO2022228486A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Definitions

  • Embodiments of the present invention also relate to a method for manufacturing a bulk acoustic wave resonator, the method comprising the steps of: forming a stack structure of a bottom electrode, a piezoelectric layer and a top electrode material layer on a substrate.
  • FIG. 4 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention, similar to that taken along B-B' in FIG. 2;
  • Figure 28 is a graph showing the relationship between the thickness of the void layer and the electromechanical coupling coefficient of the resonator under specific conditions, wherein the electromechanical coupling coefficient of the ordinate is represented as normalized data;
  • 31-32 are schematic structural diagrams of bulk acoustic wave resonators according to different exemplary embodiments of the present invention, wherein different arrangement positions of the void layer in the thickness direction are shown;
  • the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a combination of the above metals or their alloys.
  • Fig. 3A is an exemplary cross-sectional view taken along line BB' in Fig. 2, wherein no void layer or non-conductive dielectric layer is provided in the laminated structure
  • Fig. 3B is a view similar to line B in Fig. 2 - Another exemplary cross-sectional view taken along B', wherein no void layer or non-conductive dielectric layer is provided in the laminate structure
  • Fig. 3C is an exemplary cross-sectional view taken along BB' in Fig. 2, Wherein a void layer or a non-conductive dielectric layer is provided in the laminated structure.
  • a void layer 108 is provided, wherein d and f is the distance or area of the void layer on the left side (top electrode connection side) beyond area c in FIG. 3C , and e is the distance or area of the void layer on the right side (top electrode non-connect side) beyond area b in FIG. 3C .
  • the conductive layer 106 and the top electrode 105 are etched in the same step, the conductive layer and the top electrode are not etched using a two-step separate etching process. Therefore, The etching will not stop at the top electrode 105. If the size of w1 or w2 in FIG. 3B is too small, when the top electrode is etched, if there is a deviation in the lithography alignment, the top electrode will be cut off, resulting in signal It cannot be transmitted, which affects the performance of the resonator. For example, referring to FIG.
  • the etching will stop at the sacrificial layer 112 where there is no photoresist protection above the resonator, and the etching will stop at the piezoelectric layer 104 at the rest.
  • the alignment shift will cause the position opening above the resonator to straddle the edge of the sacrificial layer 112 , so that the top electrode will be nicked at the opening outside the sacrificial layer 112 , which will cause the resonator to fail.
  • the values of w1 and w2 in FIG. 3B should not be too large. Too large values may cause the suspended portion of the conductive layer 106 to collapse. In addition, too large values of w1 and w2 in FIG.
  • the dielectric layer 107 on the surface of the top electrode is etched and patterned to obtain the structure as shown in FIG. 8 .
  • FIG. 13 is similar to that in FIG. 4, except that in FIG. 13, the inner side of the conductive layer 106 is arc-shaped, while in FIG. 4, the side surface of the conductive layer 106 is vertical or parallel to the resonator thickness direction.
  • the side profile of the suspended structure of the conductive layer 106 shown in FIG. 12 to FIG. 18 can be achieved by adjusting the etching scheme (for example, changing the gas ratio of dry etching and parameters such as etching time).
  • FIG. 20 The embodiment shown in FIG. 20 is similar to that in FIG. 4, except that in FIG. 20, the inner side of the dielectric layer 111 extends to the inner side of the inner side of the conductive layer 106, while in FIG. 4, the inner side of the dielectric layer 111 is connected to the conductive layer 106. The inner sides of layer 106 are flush.
  • the outer end of the conductive layer is provided with a dangling structure, and the dangling structure forms a gap with the surface of the top electrode.
  • the sacrificial layer 112, the outer sacrificial layer 112A, and the sacrificial layer 110 for forming the cantilever and bridge structures are released to form the resonator structure shown in FIG. 23 .
  • the inner end of the non-conductive dielectric layer of the conductive layer extends to the inner side of the conductive layer;
  • the connecting edge of the top electrode is provided with an inner end suspension structure formed at the inner end of the conductive layer;
  • a filter comprising the resonator of any of 1-21.
  • Step 3 disposing and patterning a barrier layer on the conductive material layer, the inner end of the patterned barrier layer is inward of the corresponding outer end of the sacrificial layer in the horizontal direction of the resonator;
  • the inner end of the void layer or the non-conductive dielectric layer is flush with the inner end of the electrical connection area or is inside the inner end of the electrical connection area, and/or all
  • the outer end of the void layer or the non-conductive medium layer is flush with the outer end of the electrical connection area or is outside the outer end of the electrical connection area.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente invention concerne un résonateur acoustique de volume, comprenant : un substrat, un miroir acoustique, une électrode inférieure, une électrode supérieure, et une couche piézoélectrique. Une zone de chevauchement du miroir acoustique, de l'électrode inférieure, de la couche piézoélectrique et de l'électrode supérieure dans la direction de l'épaisseur du résonateur forme une zone efficace du résonateur ; une couche conductrice est en outre disposée sur le bord du côté supérieur de l'électrode supérieure entourant la zone efficace ; la couche conductrice est électriquement connectée à l'électrode supérieure dans une zone de connexion électrique du côté supérieur de l'électrode supérieure ; le résonateur comprend en outre une couche d'espacement ou une couche diélectrique non conductrice ; dans une projection parallèle à la direction de l'épaisseur du résonateur, au moins une partie de la couche d'espacement ou de la couche diélectrique non conductrice est au-dessous de la zone de connexion électrique ; et l'épaisseur de la couche d'espacement ou de la couche diélectrique non conductrice est de l'ordre de 1000 à 5000 Å. La présente invention concerne en outre un procédé de fabrication du résonateur acoustique de volume, un filtre et un dispositif électronique.
PCT/CN2022/089707 2021-04-30 2022-04-28 Résonateur acoustique de volume et son procédé de fabrication, filtre et dispositif électronique WO2022228486A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110489447.X 2021-04-30
CN202110489447.XA CN115276598A (zh) 2021-04-30 2021-04-30 体声波谐振器及制造方法、滤波器及电子设备

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WO2022228486A1 true WO2022228486A1 (fr) 2022-11-03

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Publication number Priority date Publication date Assignee Title
CN117013978B (zh) * 2022-12-14 2024-07-05 北京芯溪半导体科技有限公司 一种体声波谐振器及其制备方法、滤波器和电子设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080042780A1 (en) * 2006-08-16 2008-02-21 Samsung Electronics Co., Ltd Resonator and fabrication method thereof
CN111010123A (zh) * 2019-10-23 2020-04-14 诺思(天津)微系统有限责任公司 电极具有空隙层和凸起结构的体声波谐振器、滤波器及电子设备
CN111082776A (zh) * 2019-12-11 2020-04-28 诺思(天津)微系统有限责任公司 电极具有空隙层的体声波谐振器、滤波器及电子设备
CN111245396A (zh) * 2019-10-26 2020-06-05 诺思(天津)微系统有限责任公司 体声波谐振器及其制造方法、滤波器和电子设备
CN113872553A (zh) * 2020-06-30 2021-12-31 诺思(天津)微系统有限责任公司 体声波谐振器及制造方法、滤波器及电子设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080042780A1 (en) * 2006-08-16 2008-02-21 Samsung Electronics Co., Ltd Resonator and fabrication method thereof
CN111010123A (zh) * 2019-10-23 2020-04-14 诺思(天津)微系统有限责任公司 电极具有空隙层和凸起结构的体声波谐振器、滤波器及电子设备
CN111245396A (zh) * 2019-10-26 2020-06-05 诺思(天津)微系统有限责任公司 体声波谐振器及其制造方法、滤波器和电子设备
CN111082776A (zh) * 2019-12-11 2020-04-28 诺思(天津)微系统有限责任公司 电极具有空隙层的体声波谐振器、滤波器及电子设备
CN113872553A (zh) * 2020-06-30 2021-12-31 诺思(天津)微系统有限责任公司 体声波谐振器及制造方法、滤波器及电子设备

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