WO2022011877A1 - 转移装置及转移方法 - Google Patents

转移装置及转移方法 Download PDF

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Publication number
WO2022011877A1
WO2022011877A1 PCT/CN2020/123250 CN2020123250W WO2022011877A1 WO 2022011877 A1 WO2022011877 A1 WO 2022011877A1 CN 2020123250 W CN2020123250 W CN 2020123250W WO 2022011877 A1 WO2022011877 A1 WO 2022011877A1
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WIPO (PCT)
Prior art keywords
transfer
magnetic field
substrate
adsorption
electrostatic
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Ceased
Application number
PCT/CN2020/123250
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English (en)
French (fr)
Inventor
卢马才
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Publication of WO2022011877A1 publication Critical patent/WO2022011877A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate

Definitions

  • the present application relates to the field of display technology, and in particular, to a transfer device and a transfer method.
  • the micro-LED display manufacturing process it is a very critical step to transfer the Micro LED from the intermediate carrier plate to the TFT substrate for bonding between the Micro LED and the TFT substrate.
  • the abnormal Micro LEDs need to be removed at a fixed point.
  • FIG. 1 is a schematic structural diagram of a conventional electrostatic transfer head. As shown in FIG. 1 , when the electrostatic transfer head 200 in FIG. 1 is used to absorb the Micro LED 200 , the electrostatic force between the electrostatic transfer head 200 and the Micro LED 200 and the gap between the two The square of the distance is inversely proportional.
  • the present application provides a transfer device and a transfer method, wherein the transfer head of the transfer device makes the Micro All LEDs can be fully contacted by magnetic particles, which can overcome the problem that the distance between the suction head and the suctioned target in the traditional electrostatic transfer head seriously affects the size of the suction force.
  • the application provides a transfer device, comprising a substrate and at least one transfer head disposed on the substrate, the transfer head including: an adsorption device and a magnetic field generating device, wherein: the adsorption device is disposed on the substrate On a surface of the substrate and on the surface away from the substrate, an adsorption area is included, and the adsorption device is at least used for: The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro LED contacts, or, releases said magnetic particles from said contact layer;
  • the magnetic field generating device includes at least one electromagnetic circuit layer, the electromagnetic circuit layer includes a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer, and the electromagnetic coil is configured to receiving an independent electromagnetic signal and generating a magnetic field according to the electromagnetic signal;
  • the adsorption device includes at least one electrostatic circuit layer, and the electrostatic circuit layer includes: at least one electrostatic electrode, which is arranged on the side of the magnetic field generating device away from the substrate. one side; and, a second dielectric layer disposed on a side of the electrostatic electrodes facing away from the substrate and covering the electrostatic electrodes, wherein each of the electrostatic electrodes is configured to receive an independent electrostatic signal and The electrical signal is generated to act on the Micro The electrostatic force of the LED.
  • the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively the same layer and are respectively continuous through the first dielectric layer, so as to constitute a magnetic field generating device layer.
  • the transfer device includes a plurality of the transfer heads arranged in an array on the substrate; the transfer device further includes a plurality of blocking dams, and the blocking dams are arranged between the adjacent transfer heads and At least for defining the adsorption zone of the transfer head.
  • the electromagnetic circuit layers in the magnetic field generating devices of two adjacent transfer heads are respectively the same layer and are respectively continuous through the first dielectric layer, so as to form a magnetic field generating device layer;
  • the The blocking dam is arranged on the surface of the magnetic field generating device layer facing away from the substrate and is located between the adjacent adsorption devices, and the blocking dam is at least used to separate the adsorption areas of the adjacent adsorption units.
  • the electrostatic circuit layer includes two electrostatic electrodes on the same layer and arranged at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
  • the magnetic particles are nano-magnetic particles, and the nano-magnetic particles include a magnetic inner core and an insulating shell, wherein: the material of the magnetic inner core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co or Ni ; The material of the insulating shell is at least one of SiN x , SiO x or SiON x .
  • the size range of the magnetic particles is 5nm-10um.
  • the thickness of the contact layer ranges from 100nm to 50um.
  • the application provides a transfer device, comprising a substrate and at least one transfer head disposed on the substrate, the transfer head including: an adsorption device and a magnetic field generating device, wherein: the adsorption device is disposed on the substrate On a surface of the substrate and on the surface away from the substrate, an adsorption area is included, and the adsorption device is at least used for: The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro The LED contacts, or alternatively, releases the magnetic particles from the contact layer.
  • the magnetic field generating device includes at least one electromagnetic circuit layer, and the electromagnetic circuit layer includes a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer; the electromagnetic coil is configured as receiving an independent electromagnetic signal and generating a magnetic field according to the electromagnetic signal; a first dielectric layer, the first dielectric layer is arranged to cover or half-cover the electromagnetic coil.
  • the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively the same layer and are respectively continuous through the first dielectric layer, so as to constitute a magnetic field generating device layer.
  • the first dielectric layer is at least one of SiN x , SiO x or SiON x .
  • the transfer device includes a plurality of the transfer heads arranged in an array on the substrate; the transfer device further includes a plurality of blocking dams, and the blocking dams are arranged between the adjacent transfer heads and At least for defining the adsorption zone of the transfer head.
  • each of the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are in the same layer and are respectively continuous through the first dielectric layer, so as to form a magnetic field generating device layer; the barrier The dam is arranged on the surface of the magnetic field generating device layer facing away from the substrate and is located between the adjacent adsorption devices, and the blocking dam is at least used to separate the adsorption areas of the adjacent adsorption units.
  • the adsorption device includes at least one electrostatic circuit layer
  • the electrostatic circuit layer includes: at least one electrostatic electrode disposed on a side of the magnetic field generating device away from the substrate; and a second dielectric layer disposed on on the side of the electrostatic electrode away from the substrate and covering the electrostatic electrode; wherein each electrostatic electrode is configured to receive an independent electrostatic signal and generate an action on the Micro according to the electric signal The electrostatic force of the LED.
  • the electrostatic circuit layer includes two electrostatic electrodes on the same layer and arranged at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
  • the material of the second dielectric layer is at least one of SiN x , SiO x or SiON x .
  • the magnetic particles are nano-magnetic particles, and the nano-magnetic particles include a magnetic inner core and an insulating shell, wherein: the material of the magnetic inner core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co or Ni ; The material of the insulating shell is at least one of SiN x , SiO x or SiON x .
  • the size range of the magnetic particles is 5nm-10um.
  • the thickness of the contact layer ranges from 100nm to 50um.
  • the present application provides a transfer method, comprising the following steps:
  • the transfer device a substrate and at least one transfer head arranged on the substrate, the transfer head includes: an adsorption device and a magnetic field generating device, and: the adsorption device is arranged in A surface of the substrate and a surface away from the substrate include an adsorption area, and the adsorption device is at least used for: attaching the Micro The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro Contact the LED, or release the magnetic particles from the contact layer; S1, turn on the magnetic field generating device, and make the transfer head close to the first carrier substrate loaded with the magnetic particles, so that the transfer head absorbs the magnetic particles, so as to A contact layer with
  • the transfer device and transfer method described in this application can adsorb magnetic particles on the adsorption area of the transfer head to form a contact layer by adding a magnetic field generating device, so that the Micro All LEDs can be fully contacted by magnetic particles, which can overcome the problem that the distance between the transfer head and the target to be sucked in the traditional electrostatic transfer head seriously affects the size of the adsorption force; With the coordination, the adsorption electric field and magnetic particles can cooperate with the Micro The LED is adsorbed, so that the Micro LED can be efficiently and fixed-pointed from the carrier substrate; by controlling the electromagnetic signal provided to the magnetic field generating device, the number and shape of the magnetic particles can be adjusted to reset, and then the thickness and shape of the contact layer can be adjusted. Guaranteed Micro The LED is in full contact with the magnetic particles.
  • FIG. 1 is a schematic structural diagram of a conventional electrostatic transfer head.
  • FIG. 2 is a schematic diagram of a first embodiment of the transfer device described in this application.
  • FIG. 3 is a schematic diagram of a second embodiment of the transfer device described in the present application.
  • 4A-4D are schematic diagrams of a working process of an embodiment of the transfer device described in the present application.
  • FIG. 2 is a schematic diagram of a first embodiment of the transfer device according to the application
  • FIG. 3 is a schematic diagram of a second embodiment of the transfer device according to the application.
  • the present application provides a transfer device, the transfer device includes: a substrate 100 , at least one transfer head 200 disposed on the substrate 100 , and a transfer head 200 located between adjacent transfer heads 200 .
  • the barrier dam 300 between.
  • the transfer head 200 includes: a magnetic field generating device 210 and an adsorption device 220 .
  • the adsorption device 220 is disposed on a surface of the substrate 100 and includes an adsorption area 222 on the surface away from the substrate 100 .
  • the magnetic field generating device 210 is disposed between the adsorption device 220 and the substrate 100 and is configured to generate a magnetic field to at least: Magnetic particles 501 within a distance range are adsorbed on the adsorption area 222 to form a contact layer 500 with a predetermined structure, so that the contact layer 500 is in contact with the Micro LED 400 adsorbed on the adsorption area 222, or , the magnetic particles 501 are released from the contact layer 500 .
  • the magnetic field generating device 210 can also enable the magnetic particles 501 to adsorb the Micro LED 400 through the magnetic field.
  • the magnetic particles 501 can be adsorbed on the adsorption area 222 to form the contact layer 500, so that the contact layer 500 and the Micro LEDs 400 in different terrains can be It can be fully contacted, and then it can overcome the problem that the distance between the transfer head and the target to be sucked in the traditional electrostatic transfer head seriously affects the size of the electrostatic adsorption force.
  • the substrate 100 is used to carry the adsorption device 220 or/and the magnetic field generating device 210 .
  • the magnetic field generating device 210 and the adsorption device 220 are sequentially stacked on a surface of the substrate 100 .
  • the substrate 100 may be formed of various materials such as silicon, ceramics, and polymers.
  • the magnetic field generating device 210 is disposed on the substrate 100 , and the magnetic field generating device 210 is configured to generate an adsorption force on the magnetic particles 501 within a preset distance range, so as to control the magnetic particles 501 covers the adsorption area 222 .
  • the magnetic field generating device 210 includes at least one electromagnetic circuit layer 211 , and the electromagnetic circuit layer 211 includes a first dielectric layer 2111 and at least one electromagnetic circuit disposed in the first dielectric layer 2111 .
  • Coils 2112, each of the electromagnetic coils 2112 is configured to receive an independent electromagnetic signal and generate a magnetic field acting on the magnetic particle 501 according to the electromagnetic signal.
  • each electromagnetic coil 2112 and the magnetic field generating device 210 can be individually controlled, which can be used to perform the transfer of a single Micro LED 400 or multiple Micro LEDs 400 transfer.
  • each of the electromagnetic circuit layers 211 in the adjacent magnetic field generating devices 210 are on the same layer and continuous through the first dielectric layer 2111 to form a magnetic field generating device layer.
  • each of the first dielectric layers 2111 of the plurality of transfer heads 200 is fabricated in a whole layer, and the electromagnetic coils 2112 are distributed on the first dielectric layers 2111 and the transfer head of each layer.
  • the above-mentioned magnetic field generating device layer can be formed in the corresponding region of the head 200 .
  • the magnetic field generating devices 210 of the plurality of transfer heads 200 all include three layers of electromagnetic circuit layers 211 sequentially stacked on the substrate 100 , and the corresponding The electromagnetic circuit layers 211 of the layers are respectively the same layer and continuous with each other.
  • FIG. 2 is only a schematic structure of the magnetic field generating device 210 described in the present application.
  • the present application does not make any changes to the number of stacked layers or the stacked structure of the electromagnetic circuit 211 in the magnetic field generating device 210 , the thickness, material or structure of the first dielectric layer 2111 , or the material, structure or layout of the electromagnetic coil 2112 .
  • the specific configuration of the electromagnetic circuit 211 , the first dielectric layer 2111 or the electromagnetic coil 2112 in the magnetic field generating device 210 is appropriate, it can be used for the adsorption or release of the magnetic particles 501 and the formation of the contact layer 500 .
  • the number of layers 211 of the electromagnetic circuit, the thickness of the first dielectric layer 2111 or the arrangement of the electromagnetic coils 2112 in the different transfer heads 200 may be different.
  • the first dielectric layer 2111 is at least one of SiN x , SiO x or SiON x .
  • SiON x is selected as the first dielectric layer 2111 .
  • the electromagnetic coil 2112 is a metal coil such as copper or aluminum.
  • the electromagnetic coil 2112 adopts a coil with a spiral structure.
  • FIG. 2 only schematically shows the layout structure, material or shape of the electromagnetic coil 2112 .
  • the layout structure, material or shape of the electromagnetic coil 2112 can also be flexibly set according to actual conditions.
  • the electromagnetic signal is a current signal.
  • the electromagnetic coil 2112 By applying a current signal to the electromagnetic coil 2112 , the electromagnetic coil 2112 generates a magnetic field acting on the magnetic particles 501 .
  • controlling the current signal provided to the electromagnetic coil 2112 can adjust the strength or direction of the magnetic field generated by the electromagnetic coil 2112 , and then adjust the attached quantity, stacking shape or reset of the magnetic particles 501 . That is, by controlling the current signal passed through the electromagnetic coil 2112, the structure of the contact layer 500 formed by the attachment of the magnetic particles 501 can be controlled.
  • the magnetic particles 501 within the predetermined distance range can be adsorbed on the adsorption area 222 under the action of the magnetic field generated by the magnetic field generating device 210 to form a magnetic field with a predetermined structure.
  • Contact layer 500 Specifically, when the magnetic particles 501 are disposed toward the adsorption area 222 of the transfer head 200 and are within the action range of the magnetic field generated by the magnetic field generating device 210 , the magnetic particles 501 can be in the range of the magnetic field.
  • the contact layer 500 covering the adsorption area 222 is formed by being held on the adsorption area 222 under the action of adsorption.
  • the shape and thickness of the contact layer 500 can be adjusted by a magnetic field, so as to ensure that the Micro LED 400 and the adsorption head 100 are fully contacted, and also ensure that the adsorption device 220 is in contact with each other.
  • the Micro LED400 has a strong adsorption effect.
  • the contact layer 500 covers the side of the adsorption area 222 that is away from the substrate 100 , so as to be used for contacting with the Micro Devices adsorbed on the adsorption area 222 .
  • the contact layer 500 is composed of the magnetic particles 501 that are adsorbed and held on the adsorption region 222 under the action of the magnetic field generating device 210 .
  • the number or shape of stacking of the magnetic particles 501 in the adsorption area 222 can be controlled by controlling the electromagnetic signal connected to the magnetic field generating device 210 , thereby controlling the contact
  • the topography or thickness of layer 500 varies.
  • the thickness of the contact layer 500 ranges from 100nm to 50um.
  • the thickness of the contact layer 500 is controlled within the above-mentioned range to ensure the close adhesion effect and strong adsorption force of the transfer head 200 on the Micro LED 400 .
  • the magnetic particles 501 are nano-magnetic particles, and the nano-magnetic particles include a magnetic core and an insulating shell.
  • the material of the magnetic core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co, or Ni.
  • the material of the insulating shell is SiO x .
  • the material forming the magnetic core may also be nickel oxide or cobalt oxide.
  • the insulating shell is made of silicon nitride or a composite of silicon oxide and silicon nitride.
  • the size of the magnetic particles 501 ranges from 5nm to 10um.
  • the topographic structure or thickness variation of the contact layer 500 can be controlled more precisely, thereby realizing the transfer head 200 and each uneven Micro Full contact of LED400.
  • the adsorption device 220 is disposed on the surface of the magnetic field generating device 210 away from the substrate 100 , and the adsorption device 220 has an adsorption area 222 on the surface away from the substrate 100 ,
  • the adsorption device 220 is configured to adsorb the Micro LEDs 400 within a preset distance range to the adsorption area 222 or release the Micro LEDs 400 . It should be noted that the present application does not specifically limit the preset distance range here, as long as the transfer head 200 can adsorb the Micro LED 400 to the adsorption area 222 thereof.
  • the adsorption device 220 includes: at least one electrostatic circuit layer 221 , and the electrostatic circuit layer 221 includes one or more electrostatic electrodes 2212 and a second dielectric layer 2211 .
  • the second dielectric layer 2211 is disposed on the side of the electrostatic electrode 2212 away from the substrate 100 and covers the electrostatic electrode 2212, wherein the electrostatic electrode 2212 is configured to receive an independent electrostatic signal and according to the electrostatic Signal generation acts on the Micro The electrostatic force of LED400.
  • each electrostatic electrode 2212 and each of the adsorption devices 220 can be individually controlled, which can be used to perform the transfer of a single Micro LED 400 or multiple Micro LEDs 400 transfer.
  • the electrostatic circuit layer 221 includes two electrostatic electrodes 2212 on the same layer and spaced apart, and the two electrostatic electrodes 2212 are respectively configured with electrostatic signals of different polarities.
  • the electrostatic circuit layers 221 of different transfer heads 200 are respectively configured to include one or two electrostatic electrodes 2212 .
  • the material of the electrostatic electrode 2212 is copper or aluminum. In other embodiments, the material of the electrostatic electrode 2212 may also be nickel or silver.
  • the electrostatic electrode 2212 may have a single-layer structure or a stacked-layer structure, which is not limited in this embodiment of the present application. It should be noted that, FIG. 2 is described by taking an example that the electrostatic electrode has a single-layer structure.
  • the second dielectric layer 2111 is at least one of SiNx, SiOx or SiONx.
  • SiONx is selected as the second dielectric layer 2111 .
  • the transfer head 200 can adsorb and control the magnetic particles 501 in the magnetic field by controlling the electromagnetic signal of the magnetic field generating device 210 in the transfer head 200 .
  • the adsorption area 222 forms a contact layer 500 with a predetermined structure, so as to ensure that the Micro LED 400 to be adsorbed subsequently can fully contact the contact layer 500 .
  • the transfer head 200 can have a strong adsorption effect on the Micro LED 400 through the adsorption effect of the adsorption device 220 or/and the magnetic particles 501 in the contact layer 500 , so that the Micro LED 400 can be strongly adsorbed.
  • the LED400 is efficiently fixed-point suction from the carrier substrate.
  • a plurality of blocking dams 300 are further provided on the substrate 100 , and the blocking dams 300 are located between the adjacent transfer heads 200 and are used to at least define the distance between the transfer heads 200 .
  • Adsorption zone 222 is a plurality of blocking dams 300 located between the adjacent transfer heads 200 and are used to at least define the distance between the transfer heads 200 .
  • the electromagnetic circuit layers 211 in the magnetic field generating devices 210 of two adjacent transfer heads 200 are respectively the same layer and continuous through the first dielectric layer 2111 respectively.
  • the blocking dam 300 is disposed on the side of the magnetic field generating device layer away from the substrate 100 and between the adjacent adsorption devices 220, so as to separate the adjacent adsorption devices 220.
  • the adsorption regions 222 of the adsorption device 220 are separated.
  • the above-mentioned transfer device includes multiple transfer heads 200 .
  • One or two of the transfer heads 200 are shown as an example for illustration. During specific implementation, the number and distribution of the transfer heads 200 may be set according to actual needs, which is not limited here.
  • FIG. 3 is a schematic diagram of a second embodiment of the transfer device described in the present application. Compared with the transfer device shown in FIG. 2 , the main difference of the transfer device shown in FIG. 3 is that, in the adsorption device 220 of the transfer head 200 , each of the electrostatic circuit layers 221 only includes an electrostatic electrode 2212 .
  • FIGS. 4A-4D are schematic diagrams of the working process of the transfer device described in this application. As shown in Figures 4A-4D, the present application also provides a transfer method based on the transfer device described in the present application, the transfer method comprising the following steps:
  • step SO the transfer device described in this application is first provided.
  • the transfer device shown in FIG. 3 is used.
  • the transfer device shown in FIG. 2 may be employed.
  • FIG. 2 and FIG. 3 are only schematic structural diagrams of the transfer device described in the present application. When implementing the transfer method described in this application, it is not limited to the transfer device shown in FIG. 2 and FIG. 3 .
  • step S1 the magnetic field generating device 210 of the transfer head 200 in the transfer device is controlled to be turned on, and the magnetic particles 501 are loaded on the adsorption area 220 of the transfer head 200 facing the carrier substrate 110 .
  • the magnetic particle 501 is adsorbed to the adsorption area 220 to form a contact layer 500 with a predetermined thickness or a predetermined structure.
  • the micro LED 400 to be transferred can be selectively turned on according to the specific terrain and terrain in the horizontal and/or vertical directions, so as to control the thickness or terrain of the contact layer 500 .
  • some or all of all electromagnetic circuit layers 211 in the transfer head 200 corresponding to the Micro LED 400 to be transferred are selectively turned on or controlled.
  • step S2 the transfer device obtained in step S1 with the contact layer 500 formed thereon is brought close to the side of the second carrier substrate 120 carrying the Micro LED 400 within a preset distance, and controlled to turn on The corresponding adsorption device 210 .
  • the transfer head 200 utilizes the adsorption effect of the adsorption device 210 on the Micro LED 400 to adsorb the Micro LED 400 to the contact layer 500 , so that the Micro LED 400 is in contact with the contact layer 500 and maintained on the contact layer 500 .
  • it is not limited to connect all the adsorption devices in all the transfer heads 200 or all the electrostatic circuit layers 221 in the transfer apparatus with electromagnetic signals.
  • it can be selectively turned on according to the horizontal arrangement of the Micro LEDs 400 to be transferred and the specific terrain and terrain in the vertical height direction, so as to control the adsorption area of the transfer device or the size of the adsorption effect of the corresponding transfer head 200 .
  • the transfer device with the Micro LED 400 adsorbed in the above step S2 is controlled to be close to the third carrier substrate 130 having a preset installation position, and the Micro LED held on the transfer device is controlled.
  • the LED 400 is aligned with the preset installation position; then, the adsorption device 220 is controlled to release the Micro LED held on the transfer device to the preset installation position.

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Abstract

一种转移装置和转移方法，所述转移装置包括一基板（100）和设置于所述基板（100）上的至少一转移头（200），所述转移头（200）包括吸附器件（220）和磁场发生器件（210），磁场发生器件（210）用于生成磁场以吸附磁性粒子（501）在所述吸附区（222）内形成接触层（500），所述吸附器件（220）将Micro LED（400）吸附于所述接触层（500）的表面上。

Description

转移装置及转移方法
本申请要求于2020年07月17日提交中国专利局、申请号为202010691445.4、发明名称为“转移装置及转移方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种转移装置及转移方法。
 背景技术
在微发光二极管显示器制作工艺中，将Micro LED由中间承载板转移到TFT基板上进行Micro LED与TFT基板间的bonding是非常关键的一步。另外，对于TFT基板上Bonding后出现点亮异常的Micro LED，需要定点的把异常Micro LED去除。
因此，需要高效的Micro LED转移工具可靠、精确、快速、廉价的完成转移。然而，目前存在的Micro LED转移头由于各自的缺陷，没办法比较可靠、定点、快速、廉价的对Micro LED进行转移。
例如，在传统的静电转移头中，静电转移头与被吸取目标间的距离严重影响其吸附力的大小。图1为现有静电转移头的结构示意图，如图1所示，在利用图1中的静电转移头200吸取Micro LED200时，静电转移头200对所述Micro LED200的静电力与两者之间距离的平方成反比。
因此，亟需提供一种可靠度和精度较高，且成本低廉的转移装置及转移方法，以解决上述问题。
 技术问题
为了解决上述技术问题，本申请提供一种转移装置及转移方法，所述转移装置的转移头通过吸附器件、磁场发生器件和磁性粒子的配合，使Micro LED均能够被磁性粒子充分的接触，进而能克服传统的静电转移头中存在的吸头与被吸取目标间的距离严重影响吸附力的大小的问题。
 技术解决方案
为了实现上述目的，本申请所述转移装置及转移方法采取了以下技术方案。
本申请提供一种转移装置，包括一基板和设置于所述基板上的至少一转移头，所述转移头包括：一吸附器件和一磁场发生器件，其中：所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区，所述吸附器件至少用于：将预设距离范围内的Micro LED吸附于所述吸附区，或者，释放所述Micro LED；所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层，使得所述接触层与吸附于所述吸附区的所述Micro LED接触，或者，从所述接触层释放所述磁性粒子；
并且，所述磁场发生器件包括至少一电磁线路层，所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈，所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场；所述吸附器件包括至少一静电线路层，所述静电线路层包括：至少一静电电极，设置于所述磁场发生器件的背离所述基板的一侧；以及，第二介电层，设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极，其中每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。
进一步，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层。
进一步，所述转移装置包括阵列排布于所述基板上的复数个所述转移头；所述转移装置还包括复数个阻隔坝，所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。
在一优选实施例中，相邻两个转移头的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层；所述阻隔坝设置于所述磁场发生器件层背离所述基板的表面上并位于相邻的所述吸附器件之间，所述阻隔坝至少用于将相邻所述吸附单元的吸附区隔开。
进一步，所述静电线路层包括同层且间隔设置的两个所述静电电极，并且所述静电电极分别配置不同极性的静电信号。
进一步，所述磁性粒子为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳，其中：所述磁性内核的材料为Fe 2O 3、Fe 3O 4、Co或Ni中的至少一种；所述绝缘外壳的材料为SiN x、SiO x或SiON x中的至少一种。
进一步，所述磁性粒子尺寸范围为5nm-10um。
进一步，所述接触层的厚度范围为100nm-50um。
本申请提供一种转移装置，包括一基板和设置于所述基板上的至少一转移头，所述转移头包括：一吸附器件和一磁场发生器件，其中：所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区，所述吸附器件至少用于：将预设距离范围内的Micro LED吸附于所述吸附区，或者，释放所述Micro LED；所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层，使得所述接触层与吸附于所述吸附区的所述Micro LED接触，或者，从所述接触层释放所述磁性粒子。
进一步，所述磁场发生器件包括至少一电磁线路层，所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈；所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场；一第一介电层，所述第一介电层设置于包覆或半包覆所述电磁线圈。
进一步，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层。
进一步，所述第一介电层为SiN x、SiO x或SiON x中的至少一种。
进一步，所述转移装置包括阵列排布于所述基板上的复数个所述转移头；所述转移装置还包括复数个阻隔坝，所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。
在一优选实施例中，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层；所述阻隔坝设置于所述磁场发生器件层背离所述基板的表面上并位于相邻的所述吸附器件之间，所述阻隔坝至少用于将相邻所述吸附单元的吸附区隔开。
进一步，所述吸附器件包括至少一静电线路层，所述静电线路层包括：至少一静电电极，设置于所述磁场发生器件的背离所述基板的一侧；以及，第二介电层，设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极；其中，每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。
进一步，所述静电线路层包括同层且间隔设置的两个所述静电电极，并且所述静电电极分别配置不同极性的静电信号。
进一步，所述第二介电层的材料为SiN x、SiO x或SiON x中的至少一种。
进一步，所述磁性粒子为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳，其中：所述磁性内核的材料为Fe 2O 3、Fe 3O 4、Co或Ni中的至少一种；所述绝缘外壳的材料为SiN x、SiO x或SiON x中的至少一种。
进一步，所述磁性粒子尺寸范围为5nm-10um。
进一步，所述接触层的厚度范围为100nm-50um。
本申请提供一种转移方法，包括以下步骤：
S0、提供一转移装置，所述转移装置：一基板和设置于所述基板上的至少一转移头，所述转移头包括：一吸附器件和一磁场发生器件，并且：所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区，所述吸附器件至少用于：将预设距离范围内的Micro LED吸附于所述吸附区，或者，释放所述Micro LED；所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层，使得所述接触层与吸附于所述吸附区的所述Micro LED接触，或者，从所述接触层释放所述磁性粒子；S1、开启磁场发生器件，并使所述转移头贴近装载有磁性粒子的第一承载基板，使所述转移头吸附磁性粒子，以吸附区上以形成一具有预设结构的接触层；S2、使所述转移头贴近装载有Micro LED的第二承载基板，并开启吸附器件，以将所述Micro LED吸附于所述接触层；S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置，并调整所述吸附器件，所述Micro LED被释放于预设安位置；以及，S4、调整所述磁场发生器件，以使所述磁性粒子复位并进入下一次转移操作。
 有益效果
本申请所述转移装置及转移方法通过增设磁场发生器件，能在转移头的吸附区上吸附磁性粒子形成接触层，从而能使得的Micro LED均能够被磁性粒子充分的接触，进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响吸附力的大小的问题；通过吸附器件、磁场发生器件和磁性粒子的配合，能使吸附电场和磁性粒子协同对Micro LED进行吸附，从而能将Micro LED从承载基板高效定点吸起；通过控制提供给磁场发生器件的电磁信号，能调整磁性粒子的数量及形状复位，进而能调整接触层的厚度后地形形状，最终能保证Micro LED与磁性粒子充分的接触。
 附图说明
图1现有静电转移头的结构示意图。
图2为本申请所述转移装置的第一实施例的示意图。
图3为本申请所述转移装置的第二实施例的示意图。
图4A-4D为本申请所述转移装置一实施例的工作过程示意图。
 本发明的实施方式
本申请提供一种转移装置及转移方法，为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
图2为本申请所述转移装置第一实施例的示意图，图3为本申请所述转移装置的第二实施例的示意图。如图2和图3所示，本申请提供一种转移装置，所述转移装置包括：一基板100、设置于所述基板100上的至少一转移头200以及位于相邻所述转移头200之间的阻隔坝300。
如图2所示，所述转移头200包括：磁场发生器件210和吸附器件220。其中：所述吸附器件220设置于所述基板100的一表面上并且在背离所述基板100的表面包括一吸附区222，所述吸附器件220用于：将预设距离范围内的Micro LED400的吸附于所述吸附区222，或者，释放所述Micro LED400；所述磁场发生器件210设置于所述吸附器件220和所述基板100之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子501吸附于所述吸附区222上以形成一具有预设结构的接触层500，使得所述接触层500与吸附于所述吸附区222的所述Micro LED400接触，或者，从所述接触层500释放所述磁性粒子501。
具体地，所述磁场发生器件210通过所述磁场还能使所述磁性粒子501对所述Micro LED400进行吸附。
很显然，在本申请所述转移头200中，通过增设磁场发生器件210能在所述吸附区222上吸附磁性粒子501以形成接触层500，从而能使得接触层500与不同地势的Micro LED400均能充分的接触，进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响静电吸附力的大小的问题，最终能实现将Micro LED400从其承载基板高效定点吸起的目的。
如图2所示，所述基板100用于承载所述吸附器件220或/和所述磁场发生器件210。例如，在本实施例中，所述磁场发生器件210和所述吸附器件220依次层叠于所述基板100的一表面上。
在具体实施时，所述基板100可由诸如硅、陶瓷及聚合物这样的各种材料形成。
如图2所示，所述磁场发生器件210设置于所述基板100上，并且所述磁场发生器件210被配置为对预设距离范围内的磁性粒子501产生吸附力，以控制所述磁性粒子501覆盖于所述吸附区222上。
如图2所示，所述磁场发生器件210包括至少一电磁线路层211，所述电磁线路层211包括一第一介电层2111和设置于所述第一介电层2111内的至少一电磁线圈2112，每一所述电磁线圈2112被配置为接收独立的电磁信号并根据所述电磁信号产生作用于所述磁性粒子501的磁场。
通过将每一所述电磁线圈2112分别配置独立的电磁信号，能实现对每一电磁线圈2112以及所述磁场发生器件210的单独控制，从而能用于执行单个Micro LED400的转移或多个Micro LED400的转移。
在一优选实施例中，相邻所述磁场发生器件210内的各所述电磁线路层211分别同层并分别通过第一介电层2111相连续，以构成一磁场发生器件层。例如，本领域技术人员可以理解，将多个转移头200的各第一介电层2111整层制作，而所述电磁线圈2112分布于各层所述第一介电层2111的与所述转移头200的对应的区域内，从而能形成上述磁场发生器件层。
例如，如图2所示，在本实施例中，多个转移头200的磁场发生器件210均包括依次层叠于所述基板100上的三层电磁线路层211，并且所述转移头200的对应层的所述电磁线路层211分别同层并相互连续。
需要指出的时，图2仅本申请所述磁场发生器件210的示意性结构。本申请并未对磁场发生器件210中的电磁线路的211的堆叠层数或堆叠结构、第一介电层2111的厚度、材料或结构，或者，所述电磁线圈2112的材料、结构或布局进行限定，只要所述磁场发生器件210的中电磁线路的211、第一介电层2111或电磁线圈2112的具体配置方式适当，能用于所述磁性粒子501的吸附或释放以及形成接触层500。例如，在一所述转移装置中，不同的所述转移头200中的电磁线路的211层数、第一介电层2111的厚度或电磁线圈2112的排布方式均可以不同。
具体地，所述第一介电层2111为SiN x、SiO x或SiON x中的至少一种。例如，在本实施例中，所述第一介电层2111选用SiON x。
具体地，所述电磁线圈2112采用铜或者铝等金属线圈。在具体实施时，所述电磁线圈2112采用螺旋结构线圈。
需要说明的是，图2仅示意性地给所述电磁线圈2112的布局结构、材料或形状。在具体实施时，所述电磁线圈2112的布局结构、材料或形状也可根据实际情况灵活设定。
具体地，所述电磁信号为电流信号。通过向所述电磁线圈2112接入电流信号，所述电磁线圈2112产生作用于磁性粒子501的磁场。
在具体实施时，控制提供给所述电磁线圈2112的电流信号，能调整该电磁线圈2112产生磁场的强度或方向，进而能调整所述磁性粒子501的附着数量、堆叠形状或复位。也就是，通过控制所述电磁线圈2112通入的电流信号，能控制由所述磁性粒子501附着形成的接触层500的结构。
如图2所示，处于所述预设距离范围内的磁性粒子501能在所述磁场发生器件210产生的磁场的作用下，被吸附于所述吸附区222上，以形成具有预设结构的接触层500。具体来讲，当所述磁性粒子501朝向所述转移头200的吸附区222设置并处于所述磁场发生器件210的产生的磁场的作用范围内时，所述磁性粒子501能在所述磁场的吸附作用下保持于所述吸附区222上，进而形成覆盖所述吸附区222的接触层500。
通过采用由所述磁性粒子501堆叠形成的接触层500，能通过磁场调整接触层500的形状和厚度，从而能保障所述Micro LED400与吸附头100充分接触，还能保障所述吸附器件220对所述Micro LED400强的吸附作用。
如图2所示，所述接触层500覆盖于所述吸附区222的背离所述基板100的一侧上，以用于与吸附于所述吸附区222的所述Micro LED400接触。并且，所述接触层500由在所述磁场发生器件210的作用下吸附并保持于在所述吸附区222上的所述磁性粒子501构成。
如前所述，在具体实施时，能通过控制所述磁场发生器件210接入的电磁信号，以控制所述磁性粒子501在所述吸附区222的堆叠数量或堆叠形状，进而控制所述接触层500的地势结构或厚度变化。
具体地，所述接触层500的厚度范围为100nm-50um。将接触层500厚度控制在上述范围内，以确保所述转移头200对所述Micro LED400的紧密贴合效果和较强的吸附力。
具体地，所述磁性粒子501为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳。其中，所述磁性内核的材料为Fe 2O 3,Fe 3O 4,Co,或Ni中的至少一种。所述绝缘外壳的材料为SiO x。在其他实施例中，形成所述磁性内核的材料还可以为镍氧化物或者钴氧化物。所述绝缘外壳的材料氮化硅或者氧化硅和氮化硅的复合物。
具体地，所述磁性粒子501尺寸范围为5nm-10um。通过将所述磁性粒子501的尺寸控制在一定范围内，能更精准地控制所述接触层500的地势结构或厚度变化，进而实现转移头200和各个不平坦的Micro LED400的充分接触。
如图2所示，所述吸附器件220设置在所述磁场发生器件210的背离所述基板100的表面上，并且所述吸附器件220的背离所述基板100的表面上具有一吸附区222，所述吸附器件220被配置为用于将预设距离范围内的Micro LED400吸附于所述吸附区222或释放所述Micro LED400。需要指明的是，本申请并未对此处的预设距离范围进行具体限定，只要使得所述转移头200能将Micro LED400吸附于其吸附区222即可。
如图2所示，所述吸附器件220包括：至少一静电电路层221，所述静电电路层221包括一个或多个静电电极2212和第二介电层2211。其中第二介电层2211设置在所述静电电极2212的背离所述基板100的一侧并覆盖所述静电电极2212，其中所述静电电极2212被配置为接收独立的静电信号并根据所述静电信号产生作用于所述Micro LED400的静电力。
通过将每一所述静电电极2212分别配置独立的静电信号，能实现对每一静电电极2212以及每一所述吸附器件220的单独控制，从而能用于执行单个Micro LED400转移或多个Micro LED400转移。
具体地，所述静电电路层221包括同层且间隔设置的两个所述静电电极2212，并且两个所述静电电极2212分别配置不同极性的静电信号。例如，如图2所示，在本实施例中，不同的转移头200的静电电路层221分别被配置为包括一个或两个静电电极2212。
具体地，所述静电电极2212的材料为铜或铝。在其他实施例中，所述静电电极2212的材料还可以为镍或银。
具体地，所述静电电极2212可以为单层结构，还可以为叠层结构，本申请实施例对此不作任何限定。需要说明的是，图2是以所述静电电极为单层结构为例进行说明的。
具体地，所述第二介电层2111为SiNx、SiOx或SiONx中的至少一种。例如，在本实施例中，所述第二介电层2111选用SiONx。
至此，利用一转移头200进行Micro LED400转移过程中：在将Micro LED400吸附所述吸附区222之前，该转移头200通过控制其内磁场发生器件210的电磁信号能吸附并控制磁性粒子501在所述吸附区222形成具有预设结构的接触层500，从而能保证后续被吸附的Micro LED400能与该接触层500充分接触。基于上述过程，所述转移头200能通过其吸附器件220或/和所述接触层500中的磁性粒子501的吸附作用对 Micro LED400产生强的吸附作用，进而可以将Micro LED400从承载基板高效定点吸起。
如图2所示，在所述基板100上还设置有多个阻隔坝300，所述阻隔坝300位于相邻的所述转移头200的之间，并至少用以定义所述转移头200的吸附区222。
例如，如图2所示，在本实施例中，相邻两个转移头200的磁场发生器件210内的各所述电磁线路层211分别同层并分别通过所述第一介电层2111连续，以构成一磁场发生器件层，所述阻隔坝300设置于所述磁场发生器件层的背离所述基板100的一侧并位于相邻的所述吸附器件220之间，用以将相邻所述吸附器件220的吸附区222隔开。
需要说明的是，为了能够同时拾取多个发光二极管，上述转移装置包括多个转移头200，本申请实施例中的各附图中，为了更清楚的示意转移装置的结构，仅以转移装置中的其中一个或两个转移头200为例进行示意，在具体实施时，可以根据实际需要设置转移头200的数量和分布，此处不做限定。
图3为本申请所述转移装置的第二实施例的示意图。与图2所示的转移装置相比，图3所示转移装置的主要区别点在于，在所述转移头200的吸附器件220中 ，每一所述静电电路层221仅包括一静电电极2212。
图4A-4D为本申请所述转移装置的工作过程示意图。如图4A-4D所示，本申请还提供一种基于本申请所述转移装置的转移方法，所述转移方法包括以下步骤：
S0、提供一本申请所述转移装置；
S1、开启磁场发生器件，并使所述转移头贴近装载有磁性粒子的第一承载基板，使所述转移头吸附磁性粒子，以吸附区上以形成一具有预设结构的接触层；
S2、使所述转移头贴近装载有Micro LED的第二承载基板，并开启吸附器件，以将所述Micro LED吸附于所述接触层；
S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置，并调整所述吸附器件，所述Micro LED被释放于预设安位置；以及，
S4、调整所述磁场发生器件，以使所述磁性粒子复位并进入下一次转移操作。
在步骤SO中，首先提供本申请所述转移装置。例如，如图4A-图4D所示，在本实施例中，采用上述图3所示的转移装置。在其他实施例中，可以采用图2所示的转移装置。
需要注意的是，图2和图3仅为本申请所述转移装置的示意性结构图。在实现本申请所述转移方法时，并不仅限于图2和图3所示的转移装置。
如图4A所示，在步骤S1中，控制开启所述转移装置中的转移头200的磁场发生器件210，并使所述转移头200的吸附区220的朝向承载基板110的承载有磁性粒子501的一侧贴近到预设距离内，从而将所述磁性粒子501吸附于所述吸附区220，以形成具有预设厚度或预设结构的接触层500。
需要理解，此处并未限定于开启所述转移装置内所有转移头200内的所有电磁线路层211同时接入电磁信号。在具体实施时，可以根据需要进行转移的Micro LED400的水平和/或竖直方向上的具体地形和地势选择性开启，从而控制所述接触层500的厚度或地形。或者称，依据待转移Micro LED400的实际位置或地形，选择性地开启或控制与该待转移Micro LED400对应的转移头200内的部分或全部所有电磁线路层211。
如图4B所示，在步骤S2中，将步骤S1得到的形成有接触层500的所述转移装置朝向第二承载基板120的承载有Micro LED400的一面贴近到预设距离范围内，并控制开启相对应的吸附器件210。在此过程中，所述转移头200利用其吸附器件210对所述Micro LED400的吸附作用，将所述Micro LED400吸附于所述接触层500，使得所述Micro LED400与所述接触层500接触并保持于所述接触层500。
相似地，此处并未限定于将所述转移装置内所有转移头200内的所有吸附器件或所有静电线路层221内均接入电磁信号。在具体实施时，可以根据需要转移的Micro LED400的水平排布和竖直高度方向上的具体地形和地势选择性开启，从而控制转移装置的吸附区域或相应转移头200的吸附作用大小。
如图4C和图4D所示，控制经上述步骤S2中得到吸附有Micro LED400的转移装置贴近具有预设安装位置的第三承载基板130，并使保持于所述转移装置的Micro LED400对准预设安装位置；然后，控制所述吸附器件220，将上述保持于所述转移装置上的Micro LED释放于所述预设安装位置。
以上各个操作的具体实施可参见前面的实施例，在此不再赘述。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (19)

  1. 一种转移装置，包括一基板和设置于所述基板上的至少一转移头，其中，所述转移头包括：一吸附器件和一磁场发生器件，
    所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区，所述吸附器件至少用于：将预设距离范围内的Micro LED吸附于所述吸附区，或者，释放所述Micro LED；
    所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层，使得所述接触层与吸附于所述吸附区的所述Micro LED接触，或者，从所述接触层释放所述磁性粒子；
    并且，所述磁场发生器件包括至少一电磁线路层，所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈；所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场；
    所述吸附器件包括至少一静电线路层，所述静电线路层包括：至少一静电电极，设置于所述磁场发生器件的背离所述基板的一侧；以及，第二介电层，设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极；每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。
  2. 如权利要求1所述的转移装置，其中，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层。
  3. 如权利要求1所述的转移装置，其中，所述转移装置包括阵列排布于所述基板上的复数个所述转移头；
    所述转移装置还包括复数个阻隔坝，所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。
  4. 如权利要求1所述的转移装置，其中，所述静电线路层包括同层且间隔设置的两个所述静电电极，并且所述静电电极分别配置不同极性的静电信号。
  5. 如权利要求1所述的转移装置，其中，所述磁性粒子为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳，并且：
    所述磁性内核的材料为Fe2O3、Fe3O4、Co或Ni中的至少一种；
    所述绝缘外壳的材料为SiNx、SiOx或SiONx中的至少一种。
  6. 如权利要求1所述的转移装置，其中，所述磁性粒子尺寸范围为5nm-10um。
  7. 如权利要求1所述的转移装置，其中，所述接触层的厚度范围为100nm-50um。
  8. 一种转移装置，包括一基板和设置于所述基板上的至少一转移头，其中，所述转移头包括：一吸附器件和一磁场发生器件，并且：
    所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区，所述吸附器件至少用于：将预设距离范围内的Micro LED吸附于所述吸附区，或者，释放所述Micro LED；
    所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层，使得所述接触层与吸附于所述吸附区的所述Micro LED接触，或者，从所述接触层释放所述磁性粒子。
  9. 如权利要求8所述的转移装置，其中，所述磁场发生器件包括至少一电磁线路层，所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈；
    所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场。
  10. 如权利要求9所述的转移装置，其中，相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续，以构成一磁场发生器件层。
  11. 如权利要求9所述的转移装置，其中，所述第一介电层为SiNx、SiOx或SiONx中的至少一种。
  12. 如权利要求8所述的转移装置，其中，所述转移装置包括阵列排布于所述基板上的复数个所述转移头；
    所述转移装置还包括复数个阻隔坝，所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。
  13. 如权利要求8所述的转移装置，其中，所述吸附器件包括至少一静电线路层，所述静电线路层包括：
    至少一静电电极，设置于所述磁场发生器件的背离所述基板的一侧；以及，
    第二介电层，设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极；
    并且，每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。
  14. 如权利要求13所述的转移装置，其中，所述静电线路层包括同层且间隔设置的两个所述静电电极，并且所述静电电极分别配置不同极性的静电信号。
  15. 如权利要求13所述的转移装置，其中，所述第二介电层的材料为SiNx、SiOx或SiONx中的至少一种。
  16. 如权利要求8所述的转移装置，其中，所述磁性粒子为纳米磁性粒子，所述纳米磁性粒包括磁性内核和绝缘外壳，其中：
    所述磁性内核的材料为Fe2O3、Fe3O4、Co或Ni中的至少一种；
    所述绝缘外壳的材料为SiNx、SiOx或SiONx中的至少一种。
  17. 如权利要求8所述的转移装置，其中，所述磁性粒子尺寸范围为5nm-10um。
  18. 如权利要求8所述的转移装置，其中，所述接触层的厚度范围为100nm-50um。
  19. 一种转移方法，包括以下步骤：
    S0、提供一转移装置，所述转移装置：一基板和设置于所述基板上的至少一转移头，所述转移头包括：一吸附器件和一磁场发生器件，并且：
    所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区，所述吸附器件至少用于：将预设距离范围内的Micro LED吸附于所述吸附区，或者，释放所述Micro LED；
    所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于：将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层，使得所述接触层与吸附于所述吸附区的所述Micro LED接触，或者，从所述接触层释放所述磁性粒子；
    S1、开启磁场发生器件，并使所述转移头贴近装载有磁性粒子的第一承载基板，使所述转移头吸附磁性粒子，以吸附区上以形成一具有预设结构的接触层；
    S2、使所述转移头贴近装载有Micro LED的第二承载基板，并开启所述吸附器件，以将所述Micro LED吸附于所述接触层；
    S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置，并调整所述吸附器件，所述Micro LED被释放于预设安位置；以及，
    S4、调整所述磁场发生器件，以使所述磁性粒子复位并进入下一次转移操作。
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