WO2022011877A1 - Transfer device and transfer method - Google Patents

Transfer device and transfer method Download PDF

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Publication number
WO2022011877A1
WO2022011877A1 PCT/CN2020/123250 CN2020123250W WO2022011877A1 WO 2022011877 A1 WO2022011877 A1 WO 2022011877A1 CN 2020123250 W CN2020123250 W CN 2020123250W WO 2022011877 A1 WO2022011877 A1 WO 2022011877A1
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WO
WIPO (PCT)
Prior art keywords
transfer
magnetic field
substrate
adsorption
electrostatic
Prior art date
Application number
PCT/CN2020/123250
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French (fr)
Chinese (zh)
Inventor
卢马才
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Publication of WO2022011877A1 publication Critical patent/WO2022011877A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Definitions

  • the present application relates to the field of display technology, and in particular, to a transfer device and a transfer method.
  • the micro-LED display manufacturing process it is a very critical step to transfer the Micro LED from the intermediate carrier plate to the TFT substrate for bonding between the Micro LED and the TFT substrate.
  • the abnormal Micro LEDs need to be removed at a fixed point.
  • FIG. 1 is a schematic structural diagram of a conventional electrostatic transfer head. As shown in FIG. 1 , when the electrostatic transfer head 200 in FIG. 1 is used to absorb the Micro LED 200 , the electrostatic force between the electrostatic transfer head 200 and the Micro LED 200 and the gap between the two The square of the distance is inversely proportional.
  • the present application provides a transfer device and a transfer method, wherein the transfer head of the transfer device makes the Micro All LEDs can be fully contacted by magnetic particles, which can overcome the problem that the distance between the suction head and the suctioned target in the traditional electrostatic transfer head seriously affects the size of the suction force.
  • the application provides a transfer device, comprising a substrate and at least one transfer head disposed on the substrate, the transfer head including: an adsorption device and a magnetic field generating device, wherein: the adsorption device is disposed on the substrate On a surface of the substrate and on the surface away from the substrate, an adsorption area is included, and the adsorption device is at least used for: The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro LED contacts, or, releases said magnetic particles from said contact layer;
  • the magnetic field generating device includes at least one electromagnetic circuit layer, the electromagnetic circuit layer includes a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer, and the electromagnetic coil is configured to receiving an independent electromagnetic signal and generating a magnetic field according to the electromagnetic signal;
  • the adsorption device includes at least one electrostatic circuit layer, and the electrostatic circuit layer includes: at least one electrostatic electrode, which is arranged on the side of the magnetic field generating device away from the substrate. one side; and, a second dielectric layer disposed on a side of the electrostatic electrodes facing away from the substrate and covering the electrostatic electrodes, wherein each of the electrostatic electrodes is configured to receive an independent electrostatic signal and The electrical signal is generated to act on the Micro The electrostatic force of the LED.
  • the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively the same layer and are respectively continuous through the first dielectric layer, so as to constitute a magnetic field generating device layer.
  • the transfer device includes a plurality of the transfer heads arranged in an array on the substrate; the transfer device further includes a plurality of blocking dams, and the blocking dams are arranged between the adjacent transfer heads and At least for defining the adsorption zone of the transfer head.
  • the electromagnetic circuit layers in the magnetic field generating devices of two adjacent transfer heads are respectively the same layer and are respectively continuous through the first dielectric layer, so as to form a magnetic field generating device layer;
  • the The blocking dam is arranged on the surface of the magnetic field generating device layer facing away from the substrate and is located between the adjacent adsorption devices, and the blocking dam is at least used to separate the adsorption areas of the adjacent adsorption units.
  • the electrostatic circuit layer includes two electrostatic electrodes on the same layer and arranged at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
  • the magnetic particles are nano-magnetic particles, and the nano-magnetic particles include a magnetic inner core and an insulating shell, wherein: the material of the magnetic inner core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co or Ni ; The material of the insulating shell is at least one of SiN x , SiO x or SiON x .
  • the size range of the magnetic particles is 5nm-10um.
  • the thickness of the contact layer ranges from 100nm to 50um.
  • the application provides a transfer device, comprising a substrate and at least one transfer head disposed on the substrate, the transfer head including: an adsorption device and a magnetic field generating device, wherein: the adsorption device is disposed on the substrate On a surface of the substrate and on the surface away from the substrate, an adsorption area is included, and the adsorption device is at least used for: The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro The LED contacts, or alternatively, releases the magnetic particles from the contact layer.
  • the magnetic field generating device includes at least one electromagnetic circuit layer, and the electromagnetic circuit layer includes a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer; the electromagnetic coil is configured as receiving an independent electromagnetic signal and generating a magnetic field according to the electromagnetic signal; a first dielectric layer, the first dielectric layer is arranged to cover or half-cover the electromagnetic coil.
  • the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively the same layer and are respectively continuous through the first dielectric layer, so as to constitute a magnetic field generating device layer.
  • the first dielectric layer is at least one of SiN x , SiO x or SiON x .
  • the transfer device includes a plurality of the transfer heads arranged in an array on the substrate; the transfer device further includes a plurality of blocking dams, and the blocking dams are arranged between the adjacent transfer heads and At least for defining the adsorption zone of the transfer head.
  • each of the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are in the same layer and are respectively continuous through the first dielectric layer, so as to form a magnetic field generating device layer; the barrier The dam is arranged on the surface of the magnetic field generating device layer facing away from the substrate and is located between the adjacent adsorption devices, and the blocking dam is at least used to separate the adsorption areas of the adjacent adsorption units.
  • the adsorption device includes at least one electrostatic circuit layer
  • the electrostatic circuit layer includes: at least one electrostatic electrode disposed on a side of the magnetic field generating device away from the substrate; and a second dielectric layer disposed on on the side of the electrostatic electrode away from the substrate and covering the electrostatic electrode; wherein each electrostatic electrode is configured to receive an independent electrostatic signal and generate an action on the Micro according to the electric signal The electrostatic force of the LED.
  • the electrostatic circuit layer includes two electrostatic electrodes on the same layer and arranged at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
  • the material of the second dielectric layer is at least one of SiN x , SiO x or SiON x .
  • the magnetic particles are nano-magnetic particles, and the nano-magnetic particles include a magnetic inner core and an insulating shell, wherein: the material of the magnetic inner core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co or Ni ; The material of the insulating shell is at least one of SiN x , SiO x or SiON x .
  • the size range of the magnetic particles is 5nm-10um.
  • the thickness of the contact layer ranges from 100nm to 50um.
  • the present application provides a transfer method, comprising the following steps:
  • the transfer device a substrate and at least one transfer head arranged on the substrate, the transfer head includes: an adsorption device and a magnetic field generating device, and: the adsorption device is arranged in A surface of the substrate and a surface away from the substrate include an adsorption area, and the adsorption device is at least used for: attaching the Micro The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro Contact the LED, or release the magnetic particles from the contact layer; S1, turn on the magnetic field generating device, and make the transfer head close to the first carrier substrate loaded with the magnetic particles, so that the transfer head absorbs the magnetic particles, so as to A contact layer with
  • the transfer device and transfer method described in this application can adsorb magnetic particles on the adsorption area of the transfer head to form a contact layer by adding a magnetic field generating device, so that the Micro All LEDs can be fully contacted by magnetic particles, which can overcome the problem that the distance between the transfer head and the target to be sucked in the traditional electrostatic transfer head seriously affects the size of the adsorption force; With the coordination, the adsorption electric field and magnetic particles can cooperate with the Micro The LED is adsorbed, so that the Micro LED can be efficiently and fixed-pointed from the carrier substrate; by controlling the electromagnetic signal provided to the magnetic field generating device, the number and shape of the magnetic particles can be adjusted to reset, and then the thickness and shape of the contact layer can be adjusted. Guaranteed Micro The LED is in full contact with the magnetic particles.
  • FIG. 1 is a schematic structural diagram of a conventional electrostatic transfer head.
  • FIG. 2 is a schematic diagram of a first embodiment of the transfer device described in this application.
  • FIG. 3 is a schematic diagram of a second embodiment of the transfer device described in the present application.
  • 4A-4D are schematic diagrams of a working process of an embodiment of the transfer device described in the present application.
  • FIG. 2 is a schematic diagram of a first embodiment of the transfer device according to the application
  • FIG. 3 is a schematic diagram of a second embodiment of the transfer device according to the application.
  • the present application provides a transfer device, the transfer device includes: a substrate 100 , at least one transfer head 200 disposed on the substrate 100 , and a transfer head 200 located between adjacent transfer heads 200 .
  • the barrier dam 300 between.
  • the transfer head 200 includes: a magnetic field generating device 210 and an adsorption device 220 .
  • the adsorption device 220 is disposed on a surface of the substrate 100 and includes an adsorption area 222 on the surface away from the substrate 100 .
  • the magnetic field generating device 210 is disposed between the adsorption device 220 and the substrate 100 and is configured to generate a magnetic field to at least: Magnetic particles 501 within a distance range are adsorbed on the adsorption area 222 to form a contact layer 500 with a predetermined structure, so that the contact layer 500 is in contact with the Micro LED 400 adsorbed on the adsorption area 222, or , the magnetic particles 501 are released from the contact layer 500 .
  • the magnetic field generating device 210 can also enable the magnetic particles 501 to adsorb the Micro LED 400 through the magnetic field.
  • the magnetic particles 501 can be adsorbed on the adsorption area 222 to form the contact layer 500, so that the contact layer 500 and the Micro LEDs 400 in different terrains can be It can be fully contacted, and then it can overcome the problem that the distance between the transfer head and the target to be sucked in the traditional electrostatic transfer head seriously affects the size of the electrostatic adsorption force.
  • the substrate 100 is used to carry the adsorption device 220 or/and the magnetic field generating device 210 .
  • the magnetic field generating device 210 and the adsorption device 220 are sequentially stacked on a surface of the substrate 100 .
  • the substrate 100 may be formed of various materials such as silicon, ceramics, and polymers.
  • the magnetic field generating device 210 is disposed on the substrate 100 , and the magnetic field generating device 210 is configured to generate an adsorption force on the magnetic particles 501 within a preset distance range, so as to control the magnetic particles 501 covers the adsorption area 222 .
  • the magnetic field generating device 210 includes at least one electromagnetic circuit layer 211 , and the electromagnetic circuit layer 211 includes a first dielectric layer 2111 and at least one electromagnetic circuit disposed in the first dielectric layer 2111 .
  • Coils 2112, each of the electromagnetic coils 2112 is configured to receive an independent electromagnetic signal and generate a magnetic field acting on the magnetic particle 501 according to the electromagnetic signal.
  • each electromagnetic coil 2112 and the magnetic field generating device 210 can be individually controlled, which can be used to perform the transfer of a single Micro LED 400 or multiple Micro LEDs 400 transfer.
  • each of the electromagnetic circuit layers 211 in the adjacent magnetic field generating devices 210 are on the same layer and continuous through the first dielectric layer 2111 to form a magnetic field generating device layer.
  • each of the first dielectric layers 2111 of the plurality of transfer heads 200 is fabricated in a whole layer, and the electromagnetic coils 2112 are distributed on the first dielectric layers 2111 and the transfer head of each layer.
  • the above-mentioned magnetic field generating device layer can be formed in the corresponding region of the head 200 .
  • the magnetic field generating devices 210 of the plurality of transfer heads 200 all include three layers of electromagnetic circuit layers 211 sequentially stacked on the substrate 100 , and the corresponding The electromagnetic circuit layers 211 of the layers are respectively the same layer and continuous with each other.
  • FIG. 2 is only a schematic structure of the magnetic field generating device 210 described in the present application.
  • the present application does not make any changes to the number of stacked layers or the stacked structure of the electromagnetic circuit 211 in the magnetic field generating device 210 , the thickness, material or structure of the first dielectric layer 2111 , or the material, structure or layout of the electromagnetic coil 2112 .
  • the specific configuration of the electromagnetic circuit 211 , the first dielectric layer 2111 or the electromagnetic coil 2112 in the magnetic field generating device 210 is appropriate, it can be used for the adsorption or release of the magnetic particles 501 and the formation of the contact layer 500 .
  • the number of layers 211 of the electromagnetic circuit, the thickness of the first dielectric layer 2111 or the arrangement of the electromagnetic coils 2112 in the different transfer heads 200 may be different.
  • the first dielectric layer 2111 is at least one of SiN x , SiO x or SiON x .
  • SiON x is selected as the first dielectric layer 2111 .
  • the electromagnetic coil 2112 is a metal coil such as copper or aluminum.
  • the electromagnetic coil 2112 adopts a coil with a spiral structure.
  • FIG. 2 only schematically shows the layout structure, material or shape of the electromagnetic coil 2112 .
  • the layout structure, material or shape of the electromagnetic coil 2112 can also be flexibly set according to actual conditions.
  • the electromagnetic signal is a current signal.
  • the electromagnetic coil 2112 By applying a current signal to the electromagnetic coil 2112 , the electromagnetic coil 2112 generates a magnetic field acting on the magnetic particles 501 .
  • controlling the current signal provided to the electromagnetic coil 2112 can adjust the strength or direction of the magnetic field generated by the electromagnetic coil 2112 , and then adjust the attached quantity, stacking shape or reset of the magnetic particles 501 . That is, by controlling the current signal passed through the electromagnetic coil 2112, the structure of the contact layer 500 formed by the attachment of the magnetic particles 501 can be controlled.
  • the magnetic particles 501 within the predetermined distance range can be adsorbed on the adsorption area 222 under the action of the magnetic field generated by the magnetic field generating device 210 to form a magnetic field with a predetermined structure.
  • Contact layer 500 Specifically, when the magnetic particles 501 are disposed toward the adsorption area 222 of the transfer head 200 and are within the action range of the magnetic field generated by the magnetic field generating device 210 , the magnetic particles 501 can be in the range of the magnetic field.
  • the contact layer 500 covering the adsorption area 222 is formed by being held on the adsorption area 222 under the action of adsorption.
  • the shape and thickness of the contact layer 500 can be adjusted by a magnetic field, so as to ensure that the Micro LED 400 and the adsorption head 100 are fully contacted, and also ensure that the adsorption device 220 is in contact with each other.
  • the Micro LED400 has a strong adsorption effect.
  • the contact layer 500 covers the side of the adsorption area 222 that is away from the substrate 100 , so as to be used for contacting with the Micro Devices adsorbed on the adsorption area 222 .
  • the contact layer 500 is composed of the magnetic particles 501 that are adsorbed and held on the adsorption region 222 under the action of the magnetic field generating device 210 .
  • the number or shape of stacking of the magnetic particles 501 in the adsorption area 222 can be controlled by controlling the electromagnetic signal connected to the magnetic field generating device 210 , thereby controlling the contact
  • the topography or thickness of layer 500 varies.
  • the thickness of the contact layer 500 ranges from 100nm to 50um.
  • the thickness of the contact layer 500 is controlled within the above-mentioned range to ensure the close adhesion effect and strong adsorption force of the transfer head 200 on the Micro LED 400 .
  • the magnetic particles 501 are nano-magnetic particles, and the nano-magnetic particles include a magnetic core and an insulating shell.
  • the material of the magnetic core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co, or Ni.
  • the material of the insulating shell is SiO x .
  • the material forming the magnetic core may also be nickel oxide or cobalt oxide.
  • the insulating shell is made of silicon nitride or a composite of silicon oxide and silicon nitride.
  • the size of the magnetic particles 501 ranges from 5nm to 10um.
  • the topographic structure or thickness variation of the contact layer 500 can be controlled more precisely, thereby realizing the transfer head 200 and each uneven Micro Full contact of LED400.
  • the adsorption device 220 is disposed on the surface of the magnetic field generating device 210 away from the substrate 100 , and the adsorption device 220 has an adsorption area 222 on the surface away from the substrate 100 ,
  • the adsorption device 220 is configured to adsorb the Micro LEDs 400 within a preset distance range to the adsorption area 222 or release the Micro LEDs 400 . It should be noted that the present application does not specifically limit the preset distance range here, as long as the transfer head 200 can adsorb the Micro LED 400 to the adsorption area 222 thereof.
  • the adsorption device 220 includes: at least one electrostatic circuit layer 221 , and the electrostatic circuit layer 221 includes one or more electrostatic electrodes 2212 and a second dielectric layer 2211 .
  • the second dielectric layer 2211 is disposed on the side of the electrostatic electrode 2212 away from the substrate 100 and covers the electrostatic electrode 2212, wherein the electrostatic electrode 2212 is configured to receive an independent electrostatic signal and according to the electrostatic Signal generation acts on the Micro The electrostatic force of LED400.
  • each electrostatic electrode 2212 and each of the adsorption devices 220 can be individually controlled, which can be used to perform the transfer of a single Micro LED 400 or multiple Micro LEDs 400 transfer.
  • the electrostatic circuit layer 221 includes two electrostatic electrodes 2212 on the same layer and spaced apart, and the two electrostatic electrodes 2212 are respectively configured with electrostatic signals of different polarities.
  • the electrostatic circuit layers 221 of different transfer heads 200 are respectively configured to include one or two electrostatic electrodes 2212 .
  • the material of the electrostatic electrode 2212 is copper or aluminum. In other embodiments, the material of the electrostatic electrode 2212 may also be nickel or silver.
  • the electrostatic electrode 2212 may have a single-layer structure or a stacked-layer structure, which is not limited in this embodiment of the present application. It should be noted that, FIG. 2 is described by taking an example that the electrostatic electrode has a single-layer structure.
  • the second dielectric layer 2111 is at least one of SiNx, SiOx or SiONx.
  • SiONx is selected as the second dielectric layer 2111 .
  • the transfer head 200 can adsorb and control the magnetic particles 501 in the magnetic field by controlling the electromagnetic signal of the magnetic field generating device 210 in the transfer head 200 .
  • the adsorption area 222 forms a contact layer 500 with a predetermined structure, so as to ensure that the Micro LED 400 to be adsorbed subsequently can fully contact the contact layer 500 .
  • the transfer head 200 can have a strong adsorption effect on the Micro LED 400 through the adsorption effect of the adsorption device 220 or/and the magnetic particles 501 in the contact layer 500 , so that the Micro LED 400 can be strongly adsorbed.
  • the LED400 is efficiently fixed-point suction from the carrier substrate.
  • a plurality of blocking dams 300 are further provided on the substrate 100 , and the blocking dams 300 are located between the adjacent transfer heads 200 and are used to at least define the distance between the transfer heads 200 .
  • Adsorption zone 222 is a plurality of blocking dams 300 located between the adjacent transfer heads 200 and are used to at least define the distance between the transfer heads 200 .
  • the electromagnetic circuit layers 211 in the magnetic field generating devices 210 of two adjacent transfer heads 200 are respectively the same layer and continuous through the first dielectric layer 2111 respectively.
  • the blocking dam 300 is disposed on the side of the magnetic field generating device layer away from the substrate 100 and between the adjacent adsorption devices 220, so as to separate the adjacent adsorption devices 220.
  • the adsorption regions 222 of the adsorption device 220 are separated.
  • the above-mentioned transfer device includes multiple transfer heads 200 .
  • One or two of the transfer heads 200 are shown as an example for illustration. During specific implementation, the number and distribution of the transfer heads 200 may be set according to actual needs, which is not limited here.
  • FIG. 3 is a schematic diagram of a second embodiment of the transfer device described in the present application. Compared with the transfer device shown in FIG. 2 , the main difference of the transfer device shown in FIG. 3 is that, in the adsorption device 220 of the transfer head 200 , each of the electrostatic circuit layers 221 only includes an electrostatic electrode 2212 .
  • FIGS. 4A-4D are schematic diagrams of the working process of the transfer device described in this application. As shown in Figures 4A-4D, the present application also provides a transfer method based on the transfer device described in the present application, the transfer method comprising the following steps:
  • step SO the transfer device described in this application is first provided.
  • the transfer device shown in FIG. 3 is used.
  • the transfer device shown in FIG. 2 may be employed.
  • FIG. 2 and FIG. 3 are only schematic structural diagrams of the transfer device described in the present application. When implementing the transfer method described in this application, it is not limited to the transfer device shown in FIG. 2 and FIG. 3 .
  • step S1 the magnetic field generating device 210 of the transfer head 200 in the transfer device is controlled to be turned on, and the magnetic particles 501 are loaded on the adsorption area 220 of the transfer head 200 facing the carrier substrate 110 .
  • the magnetic particle 501 is adsorbed to the adsorption area 220 to form a contact layer 500 with a predetermined thickness or a predetermined structure.
  • the micro LED 400 to be transferred can be selectively turned on according to the specific terrain and terrain in the horizontal and/or vertical directions, so as to control the thickness or terrain of the contact layer 500 .
  • some or all of all electromagnetic circuit layers 211 in the transfer head 200 corresponding to the Micro LED 400 to be transferred are selectively turned on or controlled.
  • step S2 the transfer device obtained in step S1 with the contact layer 500 formed thereon is brought close to the side of the second carrier substrate 120 carrying the Micro LED 400 within a preset distance, and controlled to turn on The corresponding adsorption device 210 .
  • the transfer head 200 utilizes the adsorption effect of the adsorption device 210 on the Micro LED 400 to adsorb the Micro LED 400 to the contact layer 500 , so that the Micro LED 400 is in contact with the contact layer 500 and maintained on the contact layer 500 .
  • it is not limited to connect all the adsorption devices in all the transfer heads 200 or all the electrostatic circuit layers 221 in the transfer apparatus with electromagnetic signals.
  • it can be selectively turned on according to the horizontal arrangement of the Micro LEDs 400 to be transferred and the specific terrain and terrain in the vertical height direction, so as to control the adsorption area of the transfer device or the size of the adsorption effect of the corresponding transfer head 200 .
  • the transfer device with the Micro LED 400 adsorbed in the above step S2 is controlled to be close to the third carrier substrate 130 having a preset installation position, and the Micro LED held on the transfer device is controlled.
  • the LED 400 is aligned with the preset installation position; then, the adsorption device 220 is controlled to release the Micro LED held on the transfer device to the preset installation position.

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Abstract

A transfer device and a transfer method. The transfer device comprises a substrate (100) and at least one transfer head (200) provided on the substrate (100). The transfer head (200) comprises an adsorption device (220) and a magnetic field generation device (210); the magnetic field generation device (210) is used for generating a magnetic field to attract magnetic particles (501) to form a contact layer (500) in the adsorption area (222); the adsorption device (220) attracts Micro LEDs (400) to the surface of the contact layer (500).

Description

转移装置及转移方法Transfer device and transfer method
本申请要求于2020年07月17日提交中国专利局、申请号为202010691445.4、发明名称为“转移装置及转移方法”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with the application number 202010691445.4 and the invention title "Transfer Device and Transfer Method" filed with the China Patent Office on July 17, 2020, the entire contents of which are incorporated into this application by reference.
技术领域technical field
本申请涉及显示技术领域,尤其涉及一种转移装置及转移方法。The present application relates to the field of display technology, and in particular, to a transfer device and a transfer method.
背景技术Background technique
在微发光二极管显示器制作工艺中,将Micro LED由中间承载板转移到TFT基板上进行Micro LED与TFT基板间的bonding是非常关键的一步。另外,对于TFT基板上Bonding后出现点亮异常的Micro LED,需要定点的把异常Micro LED去除。In the micro-LED display manufacturing process, it is a very critical step to transfer the Micro LED from the intermediate carrier plate to the TFT substrate for bonding between the Micro LED and the TFT substrate. In addition, for Micro LEDs that are abnormally lit after bonding on the TFT substrate, the abnormal Micro LEDs need to be removed at a fixed point.
因此,需要高效的Micro LED转移工具可靠、精确、快速、廉价的完成转移。然而,目前存在的Micro LED转移头由于各自的缺陷,没办法比较可靠、定点、快速、廉价的对Micro LED进行转移。Therefore, efficient Micro LED transfer tools are required to perform transfer reliably, accurately, quickly and inexpensively. However, the existing Micro Due to their respective defects, the LED transfer head cannot transfer Micro LEDs in a reliable, fixed-point, fast and cheap manner.
例如,在传统的静电转移头中,静电转移头与被吸取目标间的距离严重影响其吸附力的大小。图1为现有静电转移头的结构示意图,如图1所示,在利用图1中的静电转移头200吸取Micro LED200时,静电转移头200对所述Micro LED200的静电力与两者之间距离的平方成反比。For example, in the traditional electrostatic transfer head, the distance between the electrostatic transfer head and the suctioned target seriously affects the size of its suction force. 1 is a schematic structural diagram of a conventional electrostatic transfer head. As shown in FIG. 1 , when the electrostatic transfer head 200 in FIG. 1 is used to absorb the Micro LED 200 , the electrostatic force between the electrostatic transfer head 200 and the Micro LED 200 and the gap between the two The square of the distance is inversely proportional.
因此,亟需提供一种可靠度和精度较高,且成本低廉的转移装置及转移方法,以解决上述问题。Therefore, there is an urgent need to provide a transfer device and transfer method with high reliability and precision and low cost to solve the above problems.
技术问题technical problem
为了解决上述技术问题,本申请提供一种转移装置及转移方法,所述转移装置的转移头通过吸附器件、磁场发生器件和磁性粒子的配合,使Micro LED均能够被磁性粒子充分的接触,进而能克服传统的静电转移头中存在的吸头与被吸取目标间的距离严重影响吸附力的大小的问题。In order to solve the above technical problems, the present application provides a transfer device and a transfer method, wherein the transfer head of the transfer device makes the Micro All LEDs can be fully contacted by magnetic particles, which can overcome the problem that the distance between the suction head and the suctioned target in the traditional electrostatic transfer head seriously affects the size of the suction force.
技术解决方案technical solutions
为了实现上述目的,本申请所述转移装置及转移方法采取了以下技术方案。In order to achieve the above purpose, the transfer device and transfer method described in the present application adopt the following technical solutions.
本申请提供一种转移装置,包括一基板和设置于所述基板上的至少一转移头,所述转移头包括:一吸附器件和一磁场发生器件,其中:所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区,所述吸附器件至少用于:将预设距离范围内的Micro LED吸附于所述吸附区,或者,释放所述Micro LED;所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于:将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层,使得所述接触层与吸附于所述吸附区的所述Micro LED接触,或者,从所述接触层释放所述磁性粒子;The application provides a transfer device, comprising a substrate and at least one transfer head disposed on the substrate, the transfer head including: an adsorption device and a magnetic field generating device, wherein: the adsorption device is disposed on the substrate On a surface of the substrate and on the surface away from the substrate, an adsorption area is included, and the adsorption device is at least used for: The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro LED contacts, or, releases said magnetic particles from said contact layer;
并且,所述磁场发生器件包括至少一电磁线路层,所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈,所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场;所述吸附器件包括至少一静电线路层,所述静电线路层包括:至少一静电电极,设置于所述磁场发生器件的背离所述基板的一侧;以及,第二介电层,设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极,其中每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。In addition, the magnetic field generating device includes at least one electromagnetic circuit layer, the electromagnetic circuit layer includes a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer, and the electromagnetic coil is configured to receiving an independent electromagnetic signal and generating a magnetic field according to the electromagnetic signal; the adsorption device includes at least one electrostatic circuit layer, and the electrostatic circuit layer includes: at least one electrostatic electrode, which is arranged on the side of the magnetic field generating device away from the substrate. one side; and, a second dielectric layer disposed on a side of the electrostatic electrodes facing away from the substrate and covering the electrostatic electrodes, wherein each of the electrostatic electrodes is configured to receive an independent electrostatic signal and The electrical signal is generated to act on the Micro The electrostatic force of the LED.
进一步,相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续,以构成一磁场发生器件层。Further, the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively the same layer and are respectively continuous through the first dielectric layer, so as to constitute a magnetic field generating device layer.
进一步,所述转移装置包括阵列排布于所述基板上的复数个所述转移头;所述转移装置还包括复数个阻隔坝,所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。Further, the transfer device includes a plurality of the transfer heads arranged in an array on the substrate; the transfer device further includes a plurality of blocking dams, and the blocking dams are arranged between the adjacent transfer heads and At least for defining the adsorption zone of the transfer head.
在一优选实施例中,相邻两个转移头的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续,以构成一磁场发生器件层;所述阻隔坝设置于所述磁场发生器件层背离所述基板的表面上并位于相邻的所述吸附器件之间,所述阻隔坝至少用于将相邻所述吸附单元的吸附区隔开。In a preferred embodiment, the electromagnetic circuit layers in the magnetic field generating devices of two adjacent transfer heads are respectively the same layer and are respectively continuous through the first dielectric layer, so as to form a magnetic field generating device layer; the The blocking dam is arranged on the surface of the magnetic field generating device layer facing away from the substrate and is located between the adjacent adsorption devices, and the blocking dam is at least used to separate the adsorption areas of the adjacent adsorption units.
进一步,所述静电线路层包括同层且间隔设置的两个所述静电电极,并且所述静电电极分别配置不同极性的静电信号。Further, the electrostatic circuit layer includes two electrostatic electrodes on the same layer and arranged at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
进一步,所述磁性粒子为纳米磁性粒子,所述纳米磁性粒包括磁性内核和绝缘外壳,其中:所述磁性内核的材料为Fe 2O 3、Fe 3O 4、Co或Ni中的至少一种;所述绝缘外壳的材料为SiN x、SiO x或SiON x中的至少一种。 Further, the magnetic particles are nano-magnetic particles, and the nano-magnetic particles include a magnetic inner core and an insulating shell, wherein: the material of the magnetic inner core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co or Ni ; The material of the insulating shell is at least one of SiN x , SiO x or SiON x .
进一步,所述磁性粒子尺寸范围为5nm-10um。Further, the size range of the magnetic particles is 5nm-10um.
进一步,所述接触层的厚度范围为100nm-50um。Further, the thickness of the contact layer ranges from 100nm to 50um.
本申请提供一种转移装置,包括一基板和设置于所述基板上的至少一转移头,所述转移头包括:一吸附器件和一磁场发生器件,其中:所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区,所述吸附器件至少用于:将预设距离范围内的Micro LED吸附于所述吸附区,或者,释放所述Micro LED;所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于:将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层,使得所述接触层与吸附于所述吸附区的所述Micro LED接触,或者,从所述接触层释放所述磁性粒子。The application provides a transfer device, comprising a substrate and at least one transfer head disposed on the substrate, the transfer head including: an adsorption device and a magnetic field generating device, wherein: the adsorption device is disposed on the substrate On a surface of the substrate and on the surface away from the substrate, an adsorption area is included, and the adsorption device is at least used for: The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro The LED contacts, or alternatively, releases the magnetic particles from the contact layer.
进一步,所述磁场发生器件包括至少一电磁线路层,所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈;所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场;一第一介电层,所述第一介电层设置于包覆或半包覆所述电磁线圈。Further, the magnetic field generating device includes at least one electromagnetic circuit layer, and the electromagnetic circuit layer includes a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer; the electromagnetic coil is configured as receiving an independent electromagnetic signal and generating a magnetic field according to the electromagnetic signal; a first dielectric layer, the first dielectric layer is arranged to cover or half-cover the electromagnetic coil.
进一步,相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续,以构成一磁场发生器件层。Further, the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively the same layer and are respectively continuous through the first dielectric layer, so as to constitute a magnetic field generating device layer.
进一步,所述第一介电层为SiN x、SiO x或SiON x中的至少一种。 Further, the first dielectric layer is at least one of SiN x , SiO x or SiON x .
进一步,所述转移装置包括阵列排布于所述基板上的复数个所述转移头;所述转移装置还包括复数个阻隔坝,所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。Further, the transfer device includes a plurality of the transfer heads arranged in an array on the substrate; the transfer device further includes a plurality of blocking dams, and the blocking dams are arranged between the adjacent transfer heads and At least for defining the adsorption zone of the transfer head.
在一优选实施例中,相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续,以构成一磁场发生器件层;所述阻隔坝设置于所述磁场发生器件层背离所述基板的表面上并位于相邻的所述吸附器件之间,所述阻隔坝至少用于将相邻所述吸附单元的吸附区隔开。In a preferred embodiment, each of the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are in the same layer and are respectively continuous through the first dielectric layer, so as to form a magnetic field generating device layer; the barrier The dam is arranged on the surface of the magnetic field generating device layer facing away from the substrate and is located between the adjacent adsorption devices, and the blocking dam is at least used to separate the adsorption areas of the adjacent adsorption units.
进一步,所述吸附器件包括至少一静电线路层,所述静电线路层包括:至少一静电电极,设置于所述磁场发生器件的背离所述基板的一侧;以及,第二介电层,设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极;其中,每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。Further, the adsorption device includes at least one electrostatic circuit layer, and the electrostatic circuit layer includes: at least one electrostatic electrode disposed on a side of the magnetic field generating device away from the substrate; and a second dielectric layer disposed on on the side of the electrostatic electrode away from the substrate and covering the electrostatic electrode; wherein each electrostatic electrode is configured to receive an independent electrostatic signal and generate an action on the Micro according to the electric signal The electrostatic force of the LED.
进一步,所述静电线路层包括同层且间隔设置的两个所述静电电极,并且所述静电电极分别配置不同极性的静电信号。Further, the electrostatic circuit layer includes two electrostatic electrodes on the same layer and arranged at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
进一步,所述第二介电层的材料为SiN x、SiO x或SiON x中的至少一种。 Further, the material of the second dielectric layer is at least one of SiN x , SiO x or SiON x .
进一步,所述磁性粒子为纳米磁性粒子,所述纳米磁性粒包括磁性内核和绝缘外壳,其中:所述磁性内核的材料为Fe 2O 3、Fe 3O 4、Co或Ni中的至少一种;所述绝缘外壳的材料为SiN x、SiO x或SiON x中的至少一种。 Further, the magnetic particles are nano-magnetic particles, and the nano-magnetic particles include a magnetic inner core and an insulating shell, wherein: the material of the magnetic inner core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co or Ni ; The material of the insulating shell is at least one of SiN x , SiO x or SiON x .
进一步,所述磁性粒子尺寸范围为5nm-10um。Further, the size range of the magnetic particles is 5nm-10um.
进一步,所述接触层的厚度范围为100nm-50um。Further, the thickness of the contact layer ranges from 100nm to 50um.
本申请提供一种转移方法,包括以下步骤:The present application provides a transfer method, comprising the following steps:
S0、提供一转移装置,所述转移装置:一基板和设置于所述基板上的至少一转移头,所述转移头包括:一吸附器件和一磁场发生器件,并且:所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区,所述吸附器件至少用于:将预设距离范围内的Micro LED吸附于所述吸附区,或者,释放所述Micro LED;所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于:将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层,使得所述接触层与吸附于所述吸附区的所述Micro LED接触,或者,从所述接触层释放所述磁性粒子;S1、开启磁场发生器件,并使所述转移头贴近装载有磁性粒子的第一承载基板,使所述转移头吸附磁性粒子,以吸附区上以形成一具有预设结构的接触层;S2、使所述转移头贴近装载有Micro LED的第二承载基板,并开启吸附器件,以将所述Micro LED吸附于所述接触层;S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置,并调整所述吸附器件,所述Micro LED被释放于预设安位置;以及,S4、调整所述磁场发生器件,以使所述磁性粒子复位并进入下一次转移操作。S0, provide a transfer device, the transfer device: a substrate and at least one transfer head arranged on the substrate, the transfer head includes: an adsorption device and a magnetic field generating device, and: the adsorption device is arranged in A surface of the substrate and a surface away from the substrate include an adsorption area, and the adsorption device is at least used for: attaching the Micro The LED is adsorbed on the adsorption area, or, the Micro LED is released; the magnetic field generating device is disposed between the adsorption device and the substrate and is configured to generate a magnetic field to at least: change a preset distance range The magnetic particles inside are adsorbed on the adsorption area to form a contact layer with a preset structure, so that the contact layer and the Micro Contact the LED, or release the magnetic particles from the contact layer; S1, turn on the magnetic field generating device, and make the transfer head close to the first carrier substrate loaded with the magnetic particles, so that the transfer head absorbs the magnetic particles, so as to A contact layer with a preset structure is formed on the suction area; S2, the transfer head is brought close to the second carrier substrate loaded with the Micro LED, and the suction device is turned on to transfer the Micro LED The LED is adsorbed on the contact layer; S3, the Micro is adsorbed The transfer head of the LED is aligned with a pre-installed position on a third substrate, and the adsorption device is adjusted, and the Micro LED is released at the pre-installed position; and, S4, the magnetic field generating device is adjusted so that all The magnetic particles are reset and enter the next transfer operation.
有益效果beneficial effect
本申请所述转移装置及转移方法通过增设磁场发生器件,能在转移头的吸附区上吸附磁性粒子形成接触层,从而能使得的Micro LED均能够被磁性粒子充分的接触,进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响吸附力的大小的问题;通过吸附器件、磁场发生器件和磁性粒子的配合,能使吸附电场和磁性粒子协同对Micro LED进行吸附,从而能将Micro LED从承载基板高效定点吸起;通过控制提供给磁场发生器件的电磁信号,能调整磁性粒子的数量及形状复位,进而能调整接触层的厚度后地形形状,最终能保证Micro LED与磁性粒子充分的接触。The transfer device and transfer method described in this application can adsorb magnetic particles on the adsorption area of the transfer head to form a contact layer by adding a magnetic field generating device, so that the Micro All LEDs can be fully contacted by magnetic particles, which can overcome the problem that the distance between the transfer head and the target to be sucked in the traditional electrostatic transfer head seriously affects the size of the adsorption force; With the coordination, the adsorption electric field and magnetic particles can cooperate with the Micro The LED is adsorbed, so that the Micro LED can be efficiently and fixed-pointed from the carrier substrate; by controlling the electromagnetic signal provided to the magnetic field generating device, the number and shape of the magnetic particles can be adjusted to reset, and then the thickness and shape of the contact layer can be adjusted. Guaranteed Micro The LED is in full contact with the magnetic particles.
附图说明Description of drawings
图1现有静电转移头的结构示意图。FIG. 1 is a schematic structural diagram of a conventional electrostatic transfer head.
图2为本申请所述转移装置的第一实施例的示意图。FIG. 2 is a schematic diagram of a first embodiment of the transfer device described in this application.
图3为本申请所述转移装置的第二实施例的示意图。FIG. 3 is a schematic diagram of a second embodiment of the transfer device described in the present application.
图4A-4D为本申请所述转移装置一实施例的工作过程示意图。4A-4D are schematic diagrams of a working process of an embodiment of the transfer device described in the present application.
本发明的实施方式Embodiments of the present invention
本申请提供一种转移装置及转移方法,为使本申请的目的、技术方案及效果更加清楚、明确,以下参照附图并举实施例对本申请进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本申请,并不用于限定本申请。The present application provides a transfer device and transfer method. In order to make the purpose, technical solution and effect of the present application more clear and definite, the present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.
图2为本申请所述转移装置第一实施例的示意图,图3为本申请所述转移装置的第二实施例的示意图。如图2和图3所示,本申请提供一种转移装置,所述转移装置包括:一基板100、设置于所述基板100上的至少一转移头200以及位于相邻所述转移头200之间的阻隔坝300。FIG. 2 is a schematic diagram of a first embodiment of the transfer device according to the application, and FIG. 3 is a schematic diagram of a second embodiment of the transfer device according to the application. As shown in FIG. 2 and FIG. 3 , the present application provides a transfer device, the transfer device includes: a substrate 100 , at least one transfer head 200 disposed on the substrate 100 , and a transfer head 200 located between adjacent transfer heads 200 . The barrier dam 300 between.
如图2所示,所述转移头200包括:磁场发生器件210和吸附器件220。其中:所述吸附器件220设置于所述基板100的一表面上并且在背离所述基板100的表面包括一吸附区222,所述吸附器件220用于:将预设距离范围内的Micro LED400的吸附于所述吸附区222,或者,释放所述Micro LED400;所述磁场发生器件210设置于所述吸附器件220和所述基板100之间并被配置为通过产生磁场以至少用于:将预设距离范围内的磁性粒子501吸附于所述吸附区222上以形成一具有预设结构的接触层500,使得所述接触层500与吸附于所述吸附区222的所述Micro LED400接触,或者,从所述接触层500释放所述磁性粒子501。As shown in FIG. 2 , the transfer head 200 includes: a magnetic field generating device 210 and an adsorption device 220 . The adsorption device 220 is disposed on a surface of the substrate 100 and includes an adsorption area 222 on the surface away from the substrate 100 . being adsorbed on the adsorption area 222, or releasing the Micro LED 400; the magnetic field generating device 210 is disposed between the adsorption device 220 and the substrate 100 and is configured to generate a magnetic field to at least: Magnetic particles 501 within a distance range are adsorbed on the adsorption area 222 to form a contact layer 500 with a predetermined structure, so that the contact layer 500 is in contact with the Micro LED 400 adsorbed on the adsorption area 222, or , the magnetic particles 501 are released from the contact layer 500 .
具体地,所述磁场发生器件210通过所述磁场还能使所述磁性粒子501对所述Micro LED400进行吸附。Specifically, the magnetic field generating device 210 can also enable the magnetic particles 501 to adsorb the Micro LED 400 through the magnetic field.
很显然,在本申请所述转移头200中,通过增设磁场发生器件210能在所述吸附区222上吸附磁性粒子501以形成接触层500,从而能使得接触层500与不同地势的Micro LED400均能充分的接触,进而能克服传统的静电转移头中存在的转移头与被吸取目标间的距离严重影响静电吸附力的大小的问题,最终能实现将Micro LED400从其承载基板高效定点吸起的目的。Obviously, in the transfer head 200 of the present application, by adding a magnetic field generating device 210, the magnetic particles 501 can be adsorbed on the adsorption area 222 to form the contact layer 500, so that the contact layer 500 and the Micro LEDs 400 in different terrains can be It can be fully contacted, and then it can overcome the problem that the distance between the transfer head and the target to be sucked in the traditional electrostatic transfer head seriously affects the size of the electrostatic adsorption force. The purpose of efficient spot suction of LED400 from its carrier substrate.
如图2所示,所述基板100用于承载所述吸附器件220或/和所述磁场发生器件210。例如,在本实施例中,所述磁场发生器件210和所述吸附器件220依次层叠于所述基板100的一表面上。As shown in FIG. 2 , the substrate 100 is used to carry the adsorption device 220 or/and the magnetic field generating device 210 . For example, in this embodiment, the magnetic field generating device 210 and the adsorption device 220 are sequentially stacked on a surface of the substrate 100 .
在具体实施时,所述基板100可由诸如硅、陶瓷及聚合物这样的各种材料形成。In specific implementations, the substrate 100 may be formed of various materials such as silicon, ceramics, and polymers.
如图2所示,所述磁场发生器件210设置于所述基板100上,并且所述磁场发生器件210被配置为对预设距离范围内的磁性粒子501产生吸附力,以控制所述磁性粒子501覆盖于所述吸附区222上。As shown in FIG. 2 , the magnetic field generating device 210 is disposed on the substrate 100 , and the magnetic field generating device 210 is configured to generate an adsorption force on the magnetic particles 501 within a preset distance range, so as to control the magnetic particles 501 covers the adsorption area 222 .
如图2所示,所述磁场发生器件210包括至少一电磁线路层211,所述电磁线路层211包括一第一介电层2111和设置于所述第一介电层2111内的至少一电磁线圈2112,每一所述电磁线圈2112被配置为接收独立的电磁信号并根据所述电磁信号产生作用于所述磁性粒子501的磁场。As shown in FIG. 2 , the magnetic field generating device 210 includes at least one electromagnetic circuit layer 211 , and the electromagnetic circuit layer 211 includes a first dielectric layer 2111 and at least one electromagnetic circuit disposed in the first dielectric layer 2111 . Coils 2112, each of the electromagnetic coils 2112 is configured to receive an independent electromagnetic signal and generate a magnetic field acting on the magnetic particle 501 according to the electromagnetic signal.
通过将每一所述电磁线圈2112分别配置独立的电磁信号,能实现对每一电磁线圈2112以及所述磁场发生器件210的单独控制,从而能用于执行单个Micro LED400的转移或多个Micro LED400的转移。By configuring each electromagnetic coil 2112 with an independent electromagnetic signal, each electromagnetic coil 2112 and the magnetic field generating device 210 can be individually controlled, which can be used to perform the transfer of a single Micro LED 400 or multiple Micro LEDs 400 transfer.
在一优选实施例中,相邻所述磁场发生器件210内的各所述电磁线路层211分别同层并分别通过第一介电层2111相连续,以构成一磁场发生器件层。例如,本领域技术人员可以理解,将多个转移头200的各第一介电层2111整层制作,而所述电磁线圈2112分布于各层所述第一介电层2111的与所述转移头200的对应的区域内,从而能形成上述磁场发生器件层。In a preferred embodiment, each of the electromagnetic circuit layers 211 in the adjacent magnetic field generating devices 210 are on the same layer and continuous through the first dielectric layer 2111 to form a magnetic field generating device layer. For example, those skilled in the art can understand that each of the first dielectric layers 2111 of the plurality of transfer heads 200 is fabricated in a whole layer, and the electromagnetic coils 2112 are distributed on the first dielectric layers 2111 and the transfer head of each layer. The above-mentioned magnetic field generating device layer can be formed in the corresponding region of the head 200 .
例如,如图2所示,在本实施例中,多个转移头200的磁场发生器件210均包括依次层叠于所述基板100上的三层电磁线路层211,并且所述转移头200的对应层的所述电磁线路层211分别同层并相互连续。For example, as shown in FIG. 2 , in this embodiment, the magnetic field generating devices 210 of the plurality of transfer heads 200 all include three layers of electromagnetic circuit layers 211 sequentially stacked on the substrate 100 , and the corresponding The electromagnetic circuit layers 211 of the layers are respectively the same layer and continuous with each other.
需要指出的时,图2仅本申请所述磁场发生器件210的示意性结构。本申请并未对磁场发生器件210中的电磁线路的211的堆叠层数或堆叠结构、第一介电层2111的厚度、材料或结构,或者,所述电磁线圈2112的材料、结构或布局进行限定,只要所述磁场发生器件210的中电磁线路的211、第一介电层2111或电磁线圈2112的具体配置方式适当,能用于所述磁性粒子501的吸附或释放以及形成接触层500。例如,在一所述转移装置中,不同的所述转移头200中的电磁线路的211层数、第一介电层2111的厚度或电磁线圈2112的排布方式均可以不同。It should be pointed out that FIG. 2 is only a schematic structure of the magnetic field generating device 210 described in the present application. The present application does not make any changes to the number of stacked layers or the stacked structure of the electromagnetic circuit 211 in the magnetic field generating device 210 , the thickness, material or structure of the first dielectric layer 2111 , or the material, structure or layout of the electromagnetic coil 2112 . As long as the specific configuration of the electromagnetic circuit 211 , the first dielectric layer 2111 or the electromagnetic coil 2112 in the magnetic field generating device 210 is appropriate, it can be used for the adsorption or release of the magnetic particles 501 and the formation of the contact layer 500 . For example, in the transfer device, the number of layers 211 of the electromagnetic circuit, the thickness of the first dielectric layer 2111 or the arrangement of the electromagnetic coils 2112 in the different transfer heads 200 may be different.
具体地,所述第一介电层2111为SiN x、SiO x或SiON x中的至少一种。例如,在本实施例中,所述第一介电层2111选用SiON xSpecifically, the first dielectric layer 2111 is at least one of SiN x , SiO x or SiON x . For example, in this embodiment, SiON x is selected as the first dielectric layer 2111 .
具体地,所述电磁线圈2112采用铜或者铝等金属线圈。在具体实施时,所述电磁线圈2112采用螺旋结构线圈。Specifically, the electromagnetic coil 2112 is a metal coil such as copper or aluminum. In a specific implementation, the electromagnetic coil 2112 adopts a coil with a spiral structure.
需要说明的是,图2仅示意性地给所述电磁线圈2112的布局结构、材料或形状。在具体实施时,所述电磁线圈2112的布局结构、材料或形状也可根据实际情况灵活设定。It should be noted that, FIG. 2 only schematically shows the layout structure, material or shape of the electromagnetic coil 2112 . During specific implementation, the layout structure, material or shape of the electromagnetic coil 2112 can also be flexibly set according to actual conditions.
具体地,所述电磁信号为电流信号。通过向所述电磁线圈2112接入电流信号,所述电磁线圈2112产生作用于磁性粒子501的磁场。Specifically, the electromagnetic signal is a current signal. By applying a current signal to the electromagnetic coil 2112 , the electromagnetic coil 2112 generates a magnetic field acting on the magnetic particles 501 .
在具体实施时,控制提供给所述电磁线圈2112的电流信号,能调整该电磁线圈2112产生磁场的强度或方向,进而能调整所述磁性粒子501的附着数量、堆叠形状或复位。也就是,通过控制所述电磁线圈2112通入的电流信号,能控制由所述磁性粒子501附着形成的接触层500的结构。In specific implementation, controlling the current signal provided to the electromagnetic coil 2112 can adjust the strength or direction of the magnetic field generated by the electromagnetic coil 2112 , and then adjust the attached quantity, stacking shape or reset of the magnetic particles 501 . That is, by controlling the current signal passed through the electromagnetic coil 2112, the structure of the contact layer 500 formed by the attachment of the magnetic particles 501 can be controlled.
如图2所示,处于所述预设距离范围内的磁性粒子501能在所述磁场发生器件210产生的磁场的作用下,被吸附于所述吸附区222上,以形成具有预设结构的接触层500。具体来讲,当所述磁性粒子501朝向所述转移头200的吸附区222设置并处于所述磁场发生器件210的产生的磁场的作用范围内时,所述磁性粒子501能在所述磁场的吸附作用下保持于所述吸附区222上,进而形成覆盖所述吸附区222的接触层500。As shown in FIG. 2 , the magnetic particles 501 within the predetermined distance range can be adsorbed on the adsorption area 222 under the action of the magnetic field generated by the magnetic field generating device 210 to form a magnetic field with a predetermined structure. Contact layer 500 . Specifically, when the magnetic particles 501 are disposed toward the adsorption area 222 of the transfer head 200 and are within the action range of the magnetic field generated by the magnetic field generating device 210 , the magnetic particles 501 can be in the range of the magnetic field. The contact layer 500 covering the adsorption area 222 is formed by being held on the adsorption area 222 under the action of adsorption.
通过采用由所述磁性粒子501堆叠形成的接触层500,能通过磁场调整接触层500的形状和厚度,从而能保障所述Micro LED400与吸附头100充分接触,还能保障所述吸附器件220对所述Micro LED400强的吸附作用。By using the contact layer 500 formed by stacking the magnetic particles 501, the shape and thickness of the contact layer 500 can be adjusted by a magnetic field, so as to ensure that the Micro LED 400 and the adsorption head 100 are fully contacted, and also ensure that the adsorption device 220 is in contact with each other. The Micro LED400 has a strong adsorption effect.
如图2所示,所述接触层500覆盖于所述吸附区222的背离所述基板100的一侧上,以用于与吸附于所述吸附区222的所述Micro LED400接触。并且,所述接触层500由在所述磁场发生器件210的作用下吸附并保持于在所述吸附区222上的所述磁性粒子501构成。As shown in FIG. 2 , the contact layer 500 covers the side of the adsorption area 222 that is away from the substrate 100 , so as to be used for contacting with the Micro Devices adsorbed on the adsorption area 222 . LED400 contacts. In addition, the contact layer 500 is composed of the magnetic particles 501 that are adsorbed and held on the adsorption region 222 under the action of the magnetic field generating device 210 .
如前所述,在具体实施时,能通过控制所述磁场发生器件210接入的电磁信号,以控制所述磁性粒子501在所述吸附区222的堆叠数量或堆叠形状,进而控制所述接触层500的地势结构或厚度变化。As mentioned above, in a specific implementation, the number or shape of stacking of the magnetic particles 501 in the adsorption area 222 can be controlled by controlling the electromagnetic signal connected to the magnetic field generating device 210 , thereby controlling the contact The topography or thickness of layer 500 varies.
具体地,所述接触层500的厚度范围为100nm-50um。将接触层500厚度控制在上述范围内,以确保所述转移头200对所述Micro LED400的紧密贴合效果和较强的吸附力。Specifically, the thickness of the contact layer 500 ranges from 100nm to 50um. The thickness of the contact layer 500 is controlled within the above-mentioned range to ensure the close adhesion effect and strong adsorption force of the transfer head 200 on the Micro LED 400 .
具体地,所述磁性粒子501为纳米磁性粒子,所述纳米磁性粒包括磁性内核和绝缘外壳。其中,所述磁性内核的材料为Fe 2O 3,Fe 3O 4,Co,或Ni中的至少一种。所述绝缘外壳的材料为SiO x。在其他实施例中,形成所述磁性内核的材料还可以为镍氧化物或者钴氧化物。所述绝缘外壳的材料氮化硅或者氧化硅和氮化硅的复合物。 Specifically, the magnetic particles 501 are nano-magnetic particles, and the nano-magnetic particles include a magnetic core and an insulating shell. Wherein, the material of the magnetic core is at least one of Fe 2 O 3 , Fe 3 O 4 , Co, or Ni. The material of the insulating shell is SiO x . In other embodiments, the material forming the magnetic core may also be nickel oxide or cobalt oxide. The insulating shell is made of silicon nitride or a composite of silicon oxide and silicon nitride.
具体地,所述磁性粒子501尺寸范围为5nm-10um。通过将所述磁性粒子501的尺寸控制在一定范围内,能更精准地控制所述接触层500的地势结构或厚度变化,进而实现转移头200和各个不平坦的Micro LED400的充分接触。Specifically, the size of the magnetic particles 501 ranges from 5nm to 10um. By controlling the size of the magnetic particles 501 within a certain range, the topographic structure or thickness variation of the contact layer 500 can be controlled more precisely, thereby realizing the transfer head 200 and each uneven Micro Full contact of LED400.
如图2所示,所述吸附器件220设置在所述磁场发生器件210的背离所述基板100的表面上,并且所述吸附器件220的背离所述基板100的表面上具有一吸附区222,所述吸附器件220被配置为用于将预设距离范围内的Micro LED400吸附于所述吸附区222或释放所述Micro LED400。需要指明的是,本申请并未对此处的预设距离范围进行具体限定,只要使得所述转移头200能将Micro LED400吸附于其吸附区222即可。As shown in FIG. 2 , the adsorption device 220 is disposed on the surface of the magnetic field generating device 210 away from the substrate 100 , and the adsorption device 220 has an adsorption area 222 on the surface away from the substrate 100 , The adsorption device 220 is configured to adsorb the Micro LEDs 400 within a preset distance range to the adsorption area 222 or release the Micro LEDs 400 . It should be noted that the present application does not specifically limit the preset distance range here, as long as the transfer head 200 can adsorb the Micro LED 400 to the adsorption area 222 thereof.
如图2所示,所述吸附器件220包括:至少一静电电路层221,所述静电电路层221包括一个或多个静电电极2212和第二介电层2211。其中第二介电层2211设置在所述静电电极2212的背离所述基板100的一侧并覆盖所述静电电极2212,其中所述静电电极2212被配置为接收独立的静电信号并根据所述静电信号产生作用于所述Micro LED400的静电力。As shown in FIG. 2 , the adsorption device 220 includes: at least one electrostatic circuit layer 221 , and the electrostatic circuit layer 221 includes one or more electrostatic electrodes 2212 and a second dielectric layer 2211 . Wherein the second dielectric layer 2211 is disposed on the side of the electrostatic electrode 2212 away from the substrate 100 and covers the electrostatic electrode 2212, wherein the electrostatic electrode 2212 is configured to receive an independent electrostatic signal and according to the electrostatic Signal generation acts on the Micro The electrostatic force of LED400.
通过将每一所述静电电极2212分别配置独立的静电信号,能实现对每一静电电极2212以及每一所述吸附器件220的单独控制,从而能用于执行单个Micro LED400转移或多个Micro LED400转移。By configuring each of the electrostatic electrodes 2212 with an independent electrostatic signal, each electrostatic electrode 2212 and each of the adsorption devices 220 can be individually controlled, which can be used to perform the transfer of a single Micro LED 400 or multiple Micro LEDs 400 transfer.
具体地,所述静电电路层221包括同层且间隔设置的两个所述静电电极2212,并且两个所述静电电极2212分别配置不同极性的静电信号。例如,如图2所示,在本实施例中,不同的转移头200的静电电路层221分别被配置为包括一个或两个静电电极2212。Specifically, the electrostatic circuit layer 221 includes two electrostatic electrodes 2212 on the same layer and spaced apart, and the two electrostatic electrodes 2212 are respectively configured with electrostatic signals of different polarities. For example, as shown in FIG. 2 , in this embodiment, the electrostatic circuit layers 221 of different transfer heads 200 are respectively configured to include one or two electrostatic electrodes 2212 .
具体地,所述静电电极2212的材料为铜或铝。在其他实施例中,所述静电电极2212的材料还可以为镍或银。Specifically, the material of the electrostatic electrode 2212 is copper or aluminum. In other embodiments, the material of the electrostatic electrode 2212 may also be nickel or silver.
具体地,所述静电电极2212可以为单层结构,还可以为叠层结构,本申请实施例对此不作任何限定。需要说明的是,图2是以所述静电电极为单层结构为例进行说明的。Specifically, the electrostatic electrode 2212 may have a single-layer structure or a stacked-layer structure, which is not limited in this embodiment of the present application. It should be noted that, FIG. 2 is described by taking an example that the electrostatic electrode has a single-layer structure.
具体地,所述第二介电层2111为SiNx、SiOx或SiONx中的至少一种。例如,在本实施例中,所述第二介电层2111选用SiONx。Specifically, the second dielectric layer 2111 is at least one of SiNx, SiOx or SiONx. For example, in this embodiment, SiONx is selected as the second dielectric layer 2111 .
至此,利用一转移头200进行Micro LED400转移过程中:在将Micro LED400吸附所述吸附区222之前,该转移头200通过控制其内磁场发生器件210的电磁信号能吸附并控制磁性粒子501在所述吸附区222形成具有预设结构的接触层500,从而能保证后续被吸附的Micro LED400能与该接触层500充分接触。基于上述过程,所述转移头200能通过其吸附器件220或/和所述接触层500中的磁性粒子501的吸附作用对 Micro LED400产生强的吸附作用,进而可以将Micro LED400从承载基板高效定点吸起。So far, in the process of transferring the Micro LED 400 using a transfer head 200 : before the Micro LED 400 is adsorbed to the adsorption area 222 , the transfer head 200 can adsorb and control the magnetic particles 501 in the magnetic field by controlling the electromagnetic signal of the magnetic field generating device 210 in the transfer head 200 . The adsorption area 222 forms a contact layer 500 with a predetermined structure, so as to ensure that the Micro LED 400 to be adsorbed subsequently can fully contact the contact layer 500 . Based on the above process, the transfer head 200 can have a strong adsorption effect on the Micro LED 400 through the adsorption effect of the adsorption device 220 or/and the magnetic particles 501 in the contact layer 500 , so that the Micro LED 400 can be strongly adsorbed. The LED400 is efficiently fixed-point suction from the carrier substrate.
如图2所示,在所述基板100上还设置有多个阻隔坝300,所述阻隔坝300位于相邻的所述转移头200的之间,并至少用以定义所述转移头200的吸附区222。As shown in FIG. 2 , a plurality of blocking dams 300 are further provided on the substrate 100 , and the blocking dams 300 are located between the adjacent transfer heads 200 and are used to at least define the distance between the transfer heads 200 . Adsorption zone 222 .
例如,如图2所示,在本实施例中,相邻两个转移头200的磁场发生器件210内的各所述电磁线路层211分别同层并分别通过所述第一介电层2111连续,以构成一磁场发生器件层,所述阻隔坝300设置于所述磁场发生器件层的背离所述基板100的一侧并位于相邻的所述吸附器件220之间,用以将相邻所述吸附器件220的吸附区222隔开。For example, as shown in FIG. 2 , in this embodiment, the electromagnetic circuit layers 211 in the magnetic field generating devices 210 of two adjacent transfer heads 200 are respectively the same layer and continuous through the first dielectric layer 2111 respectively. , so as to form a magnetic field generating device layer, the blocking dam 300 is disposed on the side of the magnetic field generating device layer away from the substrate 100 and between the adjacent adsorption devices 220, so as to separate the adjacent adsorption devices 220. The adsorption regions 222 of the adsorption device 220 are separated.
需要说明的是,为了能够同时拾取多个发光二极管,上述转移装置包括多个转移头200,本申请实施例中的各附图中,为了更清楚的示意转移装置的结构,仅以转移装置中的其中一个或两个转移头200为例进行示意,在具体实施时,可以根据实际需要设置转移头200的数量和分布,此处不做限定。It should be noted that, in order to be able to pick up multiple light-emitting diodes at the same time, the above-mentioned transfer device includes multiple transfer heads 200 . One or two of the transfer heads 200 are shown as an example for illustration. During specific implementation, the number and distribution of the transfer heads 200 may be set according to actual needs, which is not limited here.
图3为本申请所述转移装置的第二实施例的示意图。与图2所示的转移装置相比,图3所示转移装置的主要区别点在于,在所述转移头200的吸附器件220中 ,每一所述静电电路层221仅包括一静电电极2212。FIG. 3 is a schematic diagram of a second embodiment of the transfer device described in the present application. Compared with the transfer device shown in FIG. 2 , the main difference of the transfer device shown in FIG. 3 is that, in the adsorption device 220 of the transfer head 200 , each of the electrostatic circuit layers 221 only includes an electrostatic electrode 2212 .
图4A-4D为本申请所述转移装置的工作过程示意图。如图4A-4D所示,本申请还提供一种基于本申请所述转移装置的转移方法,所述转移方法包括以下步骤:4A-4D are schematic diagrams of the working process of the transfer device described in this application. As shown in Figures 4A-4D, the present application also provides a transfer method based on the transfer device described in the present application, the transfer method comprising the following steps:
S0、提供一本申请所述转移装置;S0. Provide a copy of the transfer device described in the application;
S1、开启磁场发生器件,并使所述转移头贴近装载有磁性粒子的第一承载基板,使所述转移头吸附磁性粒子,以吸附区上以形成一具有预设结构的接触层;S1, turning on the magnetic field generating device, and making the transfer head close to the first carrier substrate loaded with magnetic particles, so that the transfer head adsorbs the magnetic particles to form a contact layer with a preset structure on the adsorption area;
S2、使所述转移头贴近装载有Micro LED的第二承载基板,并开启吸附器件,以将所述Micro LED吸附于所述接触层;S2. Make the transfer head close to the second carrier substrate loaded with Micro LEDs, and turn on the suction device to transfer the Micro LEDs to the second carrier substrate. The LED is adsorbed on the contact layer;
S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置,并调整所述吸附器件,所述Micro LED被释放于预设安位置;以及,S3. Align the transfer head on which the Micro LED is adsorbed with a preset position on a third substrate, and adjust the adsorption device. The LEDs are released in the preset safety positions; and,
S4、调整所述磁场发生器件,以使所述磁性粒子复位并进入下一次转移操作。S4. Adjust the magnetic field generating device to reset the magnetic particles and enter into the next transfer operation.
在步骤SO中,首先提供本申请所述转移装置。例如,如图4A-图4D所示,在本实施例中,采用上述图3所示的转移装置。在其他实施例中,可以采用图2所示的转移装置。In step SO, the transfer device described in this application is first provided. For example, as shown in FIGS. 4A to 4D , in this embodiment, the transfer device shown in FIG. 3 is used. In other embodiments, the transfer device shown in FIG. 2 may be employed.
需要注意的是,图2和图3仅为本申请所述转移装置的示意性结构图。在实现本申请所述转移方法时,并不仅限于图2和图3所示的转移装置。It should be noted that FIG. 2 and FIG. 3 are only schematic structural diagrams of the transfer device described in the present application. When implementing the transfer method described in this application, it is not limited to the transfer device shown in FIG. 2 and FIG. 3 .
如图4A所示,在步骤S1中,控制开启所述转移装置中的转移头200的磁场发生器件210,并使所述转移头200的吸附区220的朝向承载基板110的承载有磁性粒子501的一侧贴近到预设距离内,从而将所述磁性粒子501吸附于所述吸附区220,以形成具有预设厚度或预设结构的接触层500。As shown in FIG. 4A , in step S1 , the magnetic field generating device 210 of the transfer head 200 in the transfer device is controlled to be turned on, and the magnetic particles 501 are loaded on the adsorption area 220 of the transfer head 200 facing the carrier substrate 110 . The magnetic particle 501 is adsorbed to the adsorption area 220 to form a contact layer 500 with a predetermined thickness or a predetermined structure.
需要理解,此处并未限定于开启所述转移装置内所有转移头200内的所有电磁线路层211同时接入电磁信号。在具体实施时,可以根据需要进行转移的Micro LED400的水平和/或竖直方向上的具体地形和地势选择性开启,从而控制所述接触层500的厚度或地形。或者称,依据待转移Micro LED400的实际位置或地形,选择性地开启或控制与该待转移Micro LED400对应的转移头200内的部分或全部所有电磁线路层211。It should be understood that this is not limited to turning on all the electromagnetic circuit layers 211 in all the transfer heads 200 in the transfer device to simultaneously access electromagnetic signals. During specific implementation, the micro LED 400 to be transferred can be selectively turned on according to the specific terrain and terrain in the horizontal and/or vertical directions, so as to control the thickness or terrain of the contact layer 500 . In other words, according to the actual position or terrain of the Micro LED 400 to be transferred, some or all of all electromagnetic circuit layers 211 in the transfer head 200 corresponding to the Micro LED 400 to be transferred are selectively turned on or controlled.
如图4B所示,在步骤S2中,将步骤S1得到的形成有接触层500的所述转移装置朝向第二承载基板120的承载有Micro LED400的一面贴近到预设距离范围内,并控制开启相对应的吸附器件210。在此过程中,所述转移头200利用其吸附器件210对所述Micro LED400的吸附作用,将所述Micro LED400吸附于所述接触层500,使得所述Micro LED400与所述接触层500接触并保持于所述接触层500。As shown in FIG. 4B , in step S2, the transfer device obtained in step S1 with the contact layer 500 formed thereon is brought close to the side of the second carrier substrate 120 carrying the Micro LED 400 within a preset distance, and controlled to turn on The corresponding adsorption device 210 . During this process, the transfer head 200 utilizes the adsorption effect of the adsorption device 210 on the Micro LED 400 to adsorb the Micro LED 400 to the contact layer 500 , so that the Micro LED 400 is in contact with the contact layer 500 and maintained on the contact layer 500 .
相似地,此处并未限定于将所述转移装置内所有转移头200内的所有吸附器件或所有静电线路层221内均接入电磁信号。在具体实施时,可以根据需要转移的Micro LED400的水平排布和竖直高度方向上的具体地形和地势选择性开启,从而控制转移装置的吸附区域或相应转移头200的吸附作用大小。Similarly, it is not limited to connect all the adsorption devices in all the transfer heads 200 or all the electrostatic circuit layers 221 in the transfer apparatus with electromagnetic signals. During specific implementation, it can be selectively turned on according to the horizontal arrangement of the Micro LEDs 400 to be transferred and the specific terrain and terrain in the vertical height direction, so as to control the adsorption area of the transfer device or the size of the adsorption effect of the corresponding transfer head 200 .
如图4C和图4D所示,控制经上述步骤S2中得到吸附有Micro LED400的转移装置贴近具有预设安装位置的第三承载基板130,并使保持于所述转移装置的Micro LED400对准预设安装位置;然后,控制所述吸附器件220,将上述保持于所述转移装置上的Micro LED释放于所述预设安装位置。As shown in FIG. 4C and FIG. 4D , the transfer device with the Micro LED 400 adsorbed in the above step S2 is controlled to be close to the third carrier substrate 130 having a preset installation position, and the Micro LED held on the transfer device is controlled. The LED 400 is aligned with the preset installation position; then, the adsorption device 220 is controlled to release the Micro LED held on the transfer device to the preset installation position.
以上各个操作的具体实施可参见前面的实施例,在此不再赘述。For the specific implementation of the above operations, reference may be made to the foregoing embodiments, and details are not described herein again.
可以理解的是,对本领域普通技术人员来说,可以根据本申请的技术方案及其发明构思加以等同替换或改变,而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。It can be understood that for those of ordinary skill in the art, equivalent replacements or changes can be made according to the technical solutions and inventive concepts of the present application, and all these changes or replacements should belong to the protection scope of the appended claims of the present application.

Claims (19)

  1. 一种转移装置,包括一基板和设置于所述基板上的至少一转移头,其中,所述转移头包括:一吸附器件和一磁场发生器件,A transfer device includes a substrate and at least one transfer head disposed on the substrate, wherein the transfer head includes: an adsorption device and a magnetic field generating device,
    所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区,所述吸附器件至少用于:将预设距离范围内的Micro LED吸附于所述吸附区,或者,释放所述Micro LED;The adsorption device is arranged on a surface of the substrate and includes an adsorption area on the surface away from the substrate, and the adsorption device is at least used for: adsorbing Micro LEDs within a preset distance range to the adsorption area , or, release the Micro LED;
    所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于:将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层,使得所述接触层与吸附于所述吸附区的所述Micro LED接触,或者,从所述接触层释放所述磁性粒子;The magnetic field generating device is arranged between the adsorption device and the substrate, and is configured to generate a magnetic field to at least be used for: adsorbing magnetic particles within a preset distance range on the adsorption area to form a magnetic field with a predetermined distance. Setting a structured contact layer, so that the contact layer is in contact with the Micro LED adsorbed on the adsorption area, or the magnetic particles are released from the contact layer;
    并且,所述磁场发生器件包括至少一电磁线路层,所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈;所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场;In addition, the magnetic field generating device includes at least one electromagnetic circuit layer, the electromagnetic circuit layer includes a first dielectric layer and at least one electromagnetic coil coated on the first dielectric layer; the electromagnetic coil is configured as receiving an independent electromagnetic signal and generating a magnetic field according to the electromagnetic signal;
    所述吸附器件包括至少一静电线路层,所述静电线路层包括:至少一静电电极,设置于所述磁场发生器件的背离所述基板的一侧;以及,第二介电层,设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极;每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。The adsorption device includes at least one electrostatic circuit layer, and the electrostatic circuit layer includes: at least one electrostatic electrode disposed on the side of the magnetic field generating device away from the substrate; and a second dielectric layer disposed on the The electrostatic electrode has a side away from the substrate and covers the electrostatic electrode; each electrostatic electrode is configured to receive an independent electrostatic signal and generate an electrostatic force acting on the Micro LED according to the electrical signal.
  2. 如权利要求1所述的转移装置,其中,相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续,以构成一磁场发生器件层。The transfer device according to claim 1, wherein the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively the same layer and are respectively continuous through the first dielectric layer, so as to constitute a magnetic field generating device Floor.
  3. 如权利要求1所述的转移装置,其中,所述转移装置包括阵列排布于所述基板上的复数个所述转移头;The transfer apparatus of claim 1, wherein the transfer apparatus comprises a plurality of the transfer heads arranged in an array on the substrate;
    所述转移装置还包括复数个阻隔坝,所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。The transfer device further includes a plurality of blocking dams, the blocking dams are arranged between the adjacent transfer heads and are used to at least define the adsorption area of the transfer heads.
  4. 如权利要求1所述的转移装置,其中,所述静电线路层包括同层且间隔设置的两个所述静电电极,并且所述静电电极分别配置不同极性的静电信号。The transfer device according to claim 1, wherein the electrostatic circuit layer comprises two electrostatic electrodes on the same layer and arranged at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
  5. 如权利要求1所述的转移装置,其中,所述磁性粒子为纳米磁性粒子,所述纳米磁性粒包括磁性内核和绝缘外壳,并且:The transfer device of claim 1, wherein the magnetic particles are nano-magnetic particles, the nano-magnetic particles include a magnetic inner core and an insulating outer shell, and:
    所述磁性内核的材料为Fe2O3、Fe3O4、Co或Ni中的至少一种;The material of the magnetic core is at least one of Fe2O3, Fe3O4, Co or Ni;
    所述绝缘外壳的材料为SiNx、SiOx或SiONx中的至少一种。The material of the insulating shell is at least one of SiNx, SiOx or SiONx.
  6. 如权利要求1所述的转移装置,其中,所述磁性粒子尺寸范围为5nm-10um。The transfer device of claim 1, wherein the size of the magnetic particles ranges from 5 nm to 10 um.
  7. 如权利要求1所述的转移装置,其中,所述接触层的厚度范围为100nm-50um。The transfer device of claim 1, wherein the thickness of the contact layer ranges from 100 nm to 50 um.
  8. 一种转移装置,包括一基板和设置于所述基板上的至少一转移头,其中,所述转移头包括:一吸附器件和一磁场发生器件,并且:A transfer device, comprising a substrate and at least one transfer head disposed on the substrate, wherein the transfer head comprises: an adsorption device and a magnetic field generating device, and:
    所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区,所述吸附器件至少用于:将预设距离范围内的Micro LED吸附于所述吸附区,或者,释放所述Micro LED;The adsorption device is arranged on a surface of the substrate and includes an adsorption area on the surface away from the substrate, and the adsorption device is at least used for: adsorbing Micro LEDs within a preset distance range to the adsorption area , or, release the Micro LED;
    所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于:将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层,使得所述接触层与吸附于所述吸附区的所述Micro LED接触,或者,从所述接触层释放所述磁性粒子。The magnetic field generating device is disposed between the adsorption device and the substrate, and is configured to generate a magnetic field for at least: attracting magnetic particles within a predetermined distance range to the adsorption area to form a magnetic field with a predetermined distance. A structured contact layer is provided, so that the contact layer is in contact with the Micro LED adsorbed on the adsorption area, or the magnetic particles are released from the contact layer.
  9. 如权利要求8所述的转移装置,其中,所述磁场发生器件包括至少一电磁线路层,所述电磁线路层包括一第一介电层和包覆于所述第一介电层的至少一电磁线圈;The transfer device of claim 8, wherein the magnetic field generating device comprises at least one electromagnetic circuit layer, and the electromagnetic circuit layer comprises a first dielectric layer and at least one layer covering the first dielectric layer. Electromagnetic coil;
    所述电磁线圈被配置为接收独立的电磁信号并根据所述电磁信号产生磁场。The electromagnetic coil is configured to receive independent electromagnetic signals and generate a magnetic field based on the electromagnetic signals.
  10. 如权利要求9所述的转移装置,其中,相邻两个转移的磁场发生器件内的各所述电磁线路层分别同层并分别通过所述第一介电层连续,以构成一磁场发生器件层。The transfer device according to claim 9, wherein the electromagnetic circuit layers in two adjacent transferred magnetic field generating devices are respectively the same layer and are respectively continuous through the first dielectric layer, so as to constitute a magnetic field generating device Floor.
  11. 如权利要求9所述的转移装置,其中,所述第一介电层为SiNx、SiOx或SiONx中的至少一种。The transfer device of claim 9, wherein the first dielectric layer is at least one of SiNx, SiOx, or SiONx.
  12. 如权利要求8所述的转移装置,其中,所述转移装置包括阵列排布于所述基板上的复数个所述转移头;The transfer apparatus of claim 8, wherein the transfer apparatus comprises a plurality of the transfer heads arranged in an array on the substrate;
    所述转移装置还包括复数个阻隔坝,所述阻隔坝设置于相邻的所述转移头之间并至少用于定义所述转移头的吸附区。The transfer device further includes a plurality of blocking dams, the blocking dams are arranged between the adjacent transfer heads and are used to at least define the adsorption area of the transfer heads.
  13. 如权利要求8所述的转移装置,其中,所述吸附器件包括至少一静电线路层,所述静电线路层包括:The transfer device according to claim 8, wherein the adsorption device comprises at least one electrostatic circuit layer, and the electrostatic circuit layer comprises:
    至少一静电电极,设置于所述磁场发生器件的背离所述基板的一侧;以及,at least one electrostatic electrode disposed on the side of the magnetic field generating device away from the substrate; and,
    第二介电层,设置在所述静电电极的背离所述基板的一侧并覆盖所述静电电极;a second dielectric layer, disposed on the side of the electrostatic electrode away from the substrate and covering the electrostatic electrode;
    并且,每一所述静电电极被配置为接收独立的静电信号并根据所述电信号产生作用于所述Micro LED的静电力。And, each of the electrostatic electrodes is configured to receive an independent electrostatic signal and generate an electrostatic force acting on the Micro LED according to the electrical signal.
  14. 如权利要求13所述的转移装置,其中,所述静电线路层包括同层且间隔设置的两个所述静电电极,并且所述静电电极分别配置不同极性的静电信号。The transfer device according to claim 13 , wherein the electrostatic circuit layer comprises two electrostatic electrodes on the same layer and arranged at intervals, and the electrostatic electrodes are respectively configured with electrostatic signals of different polarities.
  15. 如权利要求13所述的转移装置,其中,所述第二介电层的材料为SiNx、SiOx或SiONx中的至少一种。The transfer device of claim 13, wherein the material of the second dielectric layer is at least one of SiNx, SiOx or SiONx.
  16. 如权利要求8所述的转移装置,其中,所述磁性粒子为纳米磁性粒子,所述纳米磁性粒包括磁性内核和绝缘外壳,其中:The transfer device according to claim 8, wherein the magnetic particles are nano-magnetic particles, and the nano-magnetic particles comprise a magnetic inner core and an insulating outer shell, wherein:
    所述磁性内核的材料为Fe2O3、Fe3O4、Co或Ni中的至少一种;The material of the magnetic core is at least one of Fe2O3, Fe3O4, Co or Ni;
    所述绝缘外壳的材料为SiNx、SiOx或SiONx中的至少一种。The material of the insulating shell is at least one of SiNx, SiOx or SiONx.
  17. 如权利要求8所述的转移装置,其中,所述磁性粒子尺寸范围为5nm-10um。The transfer device of claim 8, wherein the size of the magnetic particles ranges from 5 nm to 10 um.
  18. 如权利要求8所述的转移装置,其中,所述接触层的厚度范围为100nm-50um。The transfer device of claim 8, wherein the thickness of the contact layer ranges from 100 nm to 50 um.
  19. 一种转移方法,包括以下步骤:A transfer method comprising the following steps:
    S0、提供一转移装置,所述转移装置:一基板和设置于所述基板上的至少一转移头,所述转移头包括:一吸附器件和一磁场发生器件,并且:S0. Provide a transfer device, the transfer device: a substrate and at least one transfer head disposed on the substrate, the transfer head comprising: an adsorption device and a magnetic field generating device, and:
    所述吸附器件设置于所述基板的一表面上并且在背离所述基板的表面上包括一吸附区,所述吸附器件至少用于:将预设距离范围内的Micro LED吸附于所述吸附区,或者,释放所述Micro LED;The adsorption device is arranged on a surface of the substrate and includes an adsorption area on the surface away from the substrate, and the adsorption device is at least used for: adsorbing Micro LEDs within a preset distance range to the adsorption area , or, release the Micro LED;
    所述磁场发生器件设置于所述吸附器件和所述基板之间并被配置为通过产生磁场以至少用于:将预设距离范围内的磁性粒子吸附于所述吸附区上以形成一具有预设结构的接触层,使得所述接触层与吸附于所述吸附区的所述Micro LED接触,或者,从所述接触层释放所述磁性粒子;The magnetic field generating device is arranged between the adsorption device and the substrate, and is configured to generate a magnetic field to at least be used for: adsorbing magnetic particles within a preset distance range on the adsorption area to form a magnetic field with a predetermined distance. Setting a structured contact layer, so that the contact layer is in contact with the Micro LED adsorbed on the adsorption area, or the magnetic particles are released from the contact layer;
    S1、开启磁场发生器件,并使所述转移头贴近装载有磁性粒子的第一承载基板,使所述转移头吸附磁性粒子,以吸附区上以形成一具有预设结构的接触层;S1, turning on the magnetic field generating device, and making the transfer head close to the first carrier substrate loaded with magnetic particles, so that the transfer head adsorbs the magnetic particles, so as to form a contact layer with a preset structure on the adsorption area;
    S2、使所述转移头贴近装载有Micro LED的第二承载基板,并开启所述吸附器件,以将所述Micro LED吸附于所述接触层;S2, bringing the transfer head close to the second carrier substrate loaded with the Micro LED, and turning on the adsorption device to adsorb the Micro LED to the contact layer;
    S3、使吸附有所述Micro LED的转移头对准一第三基板上的预设安位置,并调整所述吸附器件,所述Micro LED被释放于预设安位置;以及,S3. Align the transfer head on which the Micro LED is adsorbed with a predetermined mounting position on a third substrate, and adjust the adsorption device, and the Micro LED is released at the predetermined mounting position; and,
    S4、调整所述磁场发生器件,以使所述磁性粒子复位并进入下一次转移操作。S4. Adjust the magnetic field generating device to reset the magnetic particles and enter into the next transfer operation.
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