WO2022004663A1 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
WO2022004663A1
WO2022004663A1 PCT/JP2021/024370 JP2021024370W WO2022004663A1 WO 2022004663 A1 WO2022004663 A1 WO 2022004663A1 JP 2021024370 W JP2021024370 W JP 2021024370W WO 2022004663 A1 WO2022004663 A1 WO 2022004663A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
light
emitting element
guide layer
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/024370
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English (en)
French (fr)
Japanese (ja)
Inventor
圭亮 堺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to US18/013,356 priority Critical patent/US11817530B2/en
Priority to CN202180046699.3A priority patent/CN115735081B/zh
Priority to JP2022533999A priority patent/JP7125570B2/ja
Publication of WO2022004663A1 publication Critical patent/WO2022004663A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00—Combination of light sources
    • F21Y2113/10—Combination of light sources of different colours
    • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Definitions

  • This disclosure relates to a light emitting device.
  • a light emitting device that has a plurality of modularized light emitting elements arranged on the surface of a substrate and is attached to a lighting device to function as a light source of the lighting device.
  • the light emitting element included in the light emitting device is, for example, an LED die coated with a phosphor and an LED module in which an LED die coated with a phosphor is packaged, and emits light mainly from the surface.
  • a light emitting device in which a large number of light emitting elements are arranged a light emitting device in which a white LED package is arranged in each section of a color filter provided with a large number of color-coded sections is known.
  • the light emitting element various small light emitting elements can be adopted, but in the present disclosure, the LED die will be described as an example of the light emitting element.
  • Japanese Patent Application Laid-Open No. 2006-86191 describes a light emitting device in which a light emitting surface is divided into a plurality of sections by a frame-shaped light-shielding member, and the divided sections are provided with an LED die and a phosphor layer covering the LED die. The arranged light emitting device is described. Further, Japanese Patent No. 6095479 describes a light emitting device in which a chip size package (CSP) that emits warm-colored light and a CSP that emits cold-colored light are arranged alternately, and a white reflective resin is filled between the CSPs. Has been done.
  • the CSP is an example of a light emitting element, includes a fluorescent resin that covers the surface and side surfaces of the LED die, and an electrode formed on the bottom surface, and has a plane size similar to that of the LED die.
  • the light emitting element when the light emitting device is in the lighting state, the light emitting element may be visually recognized in granular form by an observer at a distance of about 1 m.
  • the luminance distribution of the light emitted from the light emitting device can be made uniform, and the light emitting element can be prevented from being visually recognized in granular form. It is known that the brightness of the light emitted from the light emitting device is made uniform by increasing the distance between the light emitting device and the diffuser plate and increasing the degree of diffusion of the diffuser plate.
  • the present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide a light emitting device capable of emitting light having a more uniform luminance distribution.
  • the thickness T between the surface of the first LED die and the surface of the light guide layer is set.
  • T2 LG2 / (2tan ⁇ c) Thinner than the thickness T2 indicated by, where LG2 is the separation distance between two first LED dies arranged with one first light emitting element included in the plurality of first light emitting elements interposed therebetween. preferable.
  • the light emitting device is mounted on a substrate so as to be alternately arranged with each of the plurality of first light emitting elements, has a second LED die, and has a second wavelength different from the first wavelength. It is preferable to further have a plurality of second light emitting elements that emit light.
  • the light emitting device further has a white resin arranged between the plurality of first light emitting elements and the plurality of second light emitting elements.
  • each of the plurality of first light emitting elements further includes a first phosphor resin that covers the first LED die, and each of the plurality of second light emitting elements covers the second LED die. It is preferable that the second fluorescent resin is further contained, and the side surfaces of the first fluorescent resin and the second fluorescent resin are arranged so as to open outward toward the upper side.
  • the light emitting device further has a transparent resin arranged along the side surface of the first phosphor resin and the second phosphor resin so that the side surface opens outward toward the upper side. Is preferable.
  • the light emitting device has a second LED die, a plurality of second light emitting elements that emit light having a second wavelength different from the first wavelength, and a third LED die, the first wavelength and the light emitting device. It further has a plurality of third light emitting elements that emit light having a third wavelength different from the second wavelength, and the separation distance between the plurality of first LED dies is the separation between the second LED die and the third LED die. It is preferably longer than the distance.
  • the light emitting device is arranged on a substrate so as to surround a plurality of first light emitting elements, further has a reflective material for reflecting light emitted from the first light emitting element, and has a plurality of light guide layers.
  • the separation distance LB2 between the first LED die arranged adjacent to the reflector and the reflector is shorter than Ttan ⁇ c.
  • the light emitting device is arranged so as to cover the light guide layer and further has a diffusion layer for diffusing the light guided through the light guide layer.
  • the light emitting device is arranged so as to cover the light guide layer and further has a diffusion layer for diffusing the light guided through the light guide layer.
  • the light guide layer is arranged so as to cover the light guide layer, and may be integrated as a frame material with a diffusion layer that diffuses the light guided through the light guide layer. preferable.
  • the plurality of first light emitting elements are surface mount type light emitting elements.
  • the light emitting device has a plurality of electronic components mounted on a substrate, and further has a control circuit for controlling the light emission of the plurality of first light emitting elements.
  • Light emitting device The light emitting device according to the present disclosure can emit light having a more uniform luminance distribution.
  • (A) is a figure (No. 1) for explaining the outline of the light emitting device according to the present disclosure
  • (b) is a figure (No. 2) for explaining the outline of the light emitting device according to the present disclosure.
  • It is a perspective view of the light emitting device which concerns on 1st Embodiment. It is sectional drawing of the light emitting device along the line AA'shown in FIG. It is a characteristic diagram of the light emitting device shown in FIG. It is explanatory drawing (the 1) of the thickness of the transparent layer shown in FIG. It is explanatory drawing (the 2) of the thickness of the transparent layer shown in FIG. It is a top view of the light emitting device which concerns on 2nd Embodiment.
  • (A) is a cross-sectional view of a light emitting device according to a first modification
  • (b) is a cross-sectional view of a light emitting device according to a second modification
  • (c) is a cross section of a light emitting device according to a third modification.
  • (d) is a sectional view of the light emitting device which concerns on 4th modification
  • (e) is a sectional view of the light emitting device which concerns on 5th modification.
  • (A) is a cross-sectional view of the light emitting device according to the sixth modification
  • (b) is a cross-sectional view of the light emitting device according to the seventh modification
  • (c) is a cross section of the light emitting device according to the eighth modification.
  • (d) is a cross-sectional view of the light emitting device which concerns on the 9th modification
  • (e) is an enlarged view of the part shown by the arrow D in (a)
  • (f) is an arrow in (b).
  • (g) is an enlarged view of the part shown by arrow F in (c).
  • FIG. 1 (a) is a diagram (No. 1) for explaining the outline of the light emitting device according to the present disclosure
  • FIG. 1 (b) is a diagram for explaining the outline of the light emitting device according to the present disclosure (No. 2).
  • 1 (a) and 1 (b) are sectional views of a light emitting device according to the present disclosure.
  • the light emitting device 1 includes a substrate 10, a first light emitting element 11, a second light emitting element 12, a reflector 13, and a light guide layer 14.
  • the substrate 10 is made of a member having high thermal conductivity such as ceramics and aluminum, and mounts the first light emitting element 11 and the second light emitting element 12.
  • the first light emitting element 11 and the second light emitting element 12 are a silicone resin containing a phosphor that converts the wavelength of the light emitted from the LED die and the LED die to emit light having the first wavelength and the second wavelength. It is a CSP type light emitting element having a sealing material such as.
  • the reflective material 13 is formed of a silicone resin containing white particles such as titanium oxide (TiO 2 ), and is arranged so as to surround the first light emitting element 11 and the second light emitting element 12.
  • the light guide layer 14 is a silicone resin that transmits light emitted from the first light emitting element 11 and the second light emitting element 12, and is filled in a region surrounded by the reflective material 13.
  • the light emitting device 1 has uniformity by setting the thickness T between the surface of the LED die of the first light emitting element 11 and the second light emitting element 12 and the surface of the light guide layer 14 to be T1 or more and T2 or less. Emits light with high brightness.
  • the minimum value T1 of the thickness T between the surface of the LED die of the first light emitting element 11 and the surface of the light guide layer 14 is such that the separation distance between the LED dies of the first light emitting element 11 is LG1 and the light guide is provided.
  • T1 LG1 / (2tan ⁇ c) (1) Indicated by.
  • T2 of the thickness T between the surface of the LED die of the first light emitting element 11 and the surface of the light guide layer 14 is two first light emitting elements arranged so as to sandwich the first light emitting element 11.
  • T2 LG2 / (2tan ⁇ c) (2) Indicated by.
  • the thickness T between the surface of the LED die of the first light emitting element 11 and the surface of the light guide layer 14 is preferably 1 mm or more and 1.5 mm or less.
  • the light emitted from the first light emitting element 11 is guided by setting the thickness T between the surface of the LED die of the first light emitting element 11 and the surface of the light guide layer 14 to be T1 or more. It is emitted over the entire surface of the layer 14. Further, in the light emitting device 1, the thickness T between the surface of the LED die of the first light emitting element 11 and the surface of the light guide layer 14 is set to T2 or less, so that the thickness of the light guide layer 14 becomes thick and light emission is performed. It is possible to prevent a decrease in efficiency and suppress an increase in manufacturing cost.
  • the height of the LED die of the second light emitting element 12 is the same as the height of the LED die of the first light emitting element 11, and the arrangement pitch of the LED die of the second light emitting element 12 is the arrangement of the LED die of the first light emitting element 11. Same as pitch.
  • a CSP type light emitting element is adopted as the light emitting device 1, it may be a chip-on-board (COB) type light emitting device in which an LED die is mounted on a substrate, and a surface mount (SMD) type light emitting element is mounted. It may be a light emitting device.
  • COB chip-on-board
  • SMD surface mount
  • the light emitting device 2 is different from the light emitting device 1 in that the light emitting device 2 has a first light emitting element 15 and a light guide layer 16 in place of the first light emitting element 11, the second light emitting element 12, and the light guide layer 14.
  • the first light emitting element 15 is an LED die that emits light having a first wavelength.
  • the light guide layer 16 has a phosphor layer 17 and a transparent layer 18.
  • the phosphor layer 17 is a silicone resin containing a phosphor that converts the wavelength of the light emitted from the first light emitting element 15 to emit light having a second wavelength.
  • the transparent layer 18 is a silicone resin that transmits light emitted from the phosphor contained in the first light emitting element 15 and the phosphor layer 17.
  • the light emitting device 2 suppresses the generation of yellow ring by setting the thickness T between the surface of the first light emitting element 15 and the surface of the light guide layer 16 to be T3 or more and T4 or less.
  • the minimum value T3 of the thickness T between the surface of the first light emitting element 15 and the surface of the light guide layer 16 is between the first light emitting element 15 and the reflector 13 arranged adjacent to the reflector 13.
  • the separation distance LB1 between the first light emitting element 15 arranged adjacent to the reflector 13 and the reflector 13 is longer than Ttan ⁇ c.
  • the maximum value T4 of the thickness T between the surface of the first light emitting element 15 and the surface of the light guide layer 16 is adjacent to each other via the other first light emitting element 15 in the first light emitting element 15.
  • T4 LB2 / tan ⁇ c (4) Indicated by. That is, the separation distance LB2 between the first light emitting element 15 and the reflective material 13 arranged adjacent to the reflective material 13 via the other first light emitting element 15 is shorter than Ttan ⁇ c.
  • the light emitting device 2 has a thickness T between the surface of the first light emitting element 15 and the surface of the light guide layer 16 of T3 or more, so that the light emitting device 2 is arranged from the first light emitting element 15 adjacent to the reflective material 13.
  • the emitted light is emitted to the outer edge of the surface of the light guide layer 16 inscribed in the reflective material 13.
  • the light emitting device 2 is emitted from the phosphor contained in the phosphor layer 17 by emitting the light emitted from the first light emitting element 15 to the outer edge of the surface of the light guide layer 14 inscribed in the reflective material 13. There is no possibility that only the light emitted from the light guide layer 16 is emitted to the outer edge of the surface of the light guide layer 16 to generate a yellow ring.
  • the thickness T between the surface of the first light emitting element 15 and the surface of the light guide layer 16 is set to T4 or less, so that the thickness of the light guide layer 16 becomes thicker and the luminous efficiency decreases. This can be prevented and the increase in manufacturing cost can be suppressed.
  • FIG. 2 is a perspective view of the light emitting device according to the first embodiment
  • FIG. 3 is a cross-sectional view taken along the line AA'of FIG.
  • the light emitting device 3 is arranged above the substrate 20, eight first light emitting elements 21 and the second light emitting element 22 mounted on the surface of the substrate 20, and the first light emitting element 21 and the second light emitting element 22. It is provided with a sheet-shaped light guide layer 23. It is more preferable that the upper surface of the sheet-shaped light guide layer 23 is flat. Since the method for manufacturing the light emitting device 3 is well known, detailed description thereof will be omitted.
  • the substrate 20 is an insulating substrate having high reflectance and thermal conductivity such as ceramic, and a power supply electrode 20a is formed at a pair of corners, and a notch 20b for screwing is formed at the other pair of corners. ..
  • the first light emitting element 21 and the second light emitting element 22 are arranged in a 4 ⁇ 4 matrix on the surface of the substrate 20. Further, the first light emitting element 21 and the second light emitting element 22 are arranged in a checkered pattern.
  • the light guide layer 23 is formed of a silicone resin and is arranged so as to cover the first light emitting element 21 and the second light emitting element 22. The light guide layer 23 does not contain a diffuser, which is also called a filler. In FIG. 2, the wiring connecting the power supply electrode 20a and the first light emitting element 21 and the second light emitting element 22 and between the first light emitting element 21 and the second light emitting element 22 is omitted.
  • the first light emitting element 21 and the second light emitting element 22 have a rectangular planar shape of 1.7 mm ⁇ 1.7 mm, and include an LED die 24, a fluorescent resin 25, and a reflection frame 26.
  • the LED die 24 and the fluorescent resin 25 included in the first light emitting element 21 are also referred to as the first LED die and the first fluorescent resin
  • the LED die 24 and the fluorescent resin 25 included in the second light emitting element 22 are the second LED die and the second LED die. Also called fluorescent resin.
  • the LED die 24 has a rectangular planar shape of 1.0 mm ⁇ 1.0 mm, is a blue diode, has a sapphire substrate arranged above, a light emitting layer formed below the sapphire substrate, and is arranged on the bottom surface.
  • the main wavelength of the blue light emitted from the LED die 24 is in the range between 445 nm and 495 nm, for example 450 nm.
  • the fluorescent resin 25 is a silicone resin containing a phosphor such as YAG, which covers the surface and side surfaces of the LED die 24 and converts a part of the light emitted from the LED die 24 into wavelength.
  • the reflective frame 26 is a silicone resin containing reflective fine particles such as titanium oxide, surrounds the fluorescent resin 25, and directs the light emitted from the LED die 24 upward.
  • the first light emitting element 21 and the second light emitting element 22 emit light having a first wavelength and light having a second wavelength different from the first wavelength, because the content of the phosphor contained in the fluorescent resin 25 is different. ..
  • the light having a first wavelength emitted from the first light emitting element 21 is, for example, cold light having a color temperature of 5000K, and the light having a second wavelength emitted from the second light emitting element 22 has a color temperature of, for example, 2700K. It is a warm color light.
  • the first light emitting element 21 and the second light emitting element 22 are flip-chip mounted on the surface of the substrate 20.
  • the light guide layer 23 is adhered to the surfaces of the first light emitting element 21 and the second light emitting element 22 via an adhesive.
  • FIG. 4 is a characteristic diagram showing the relationship between the front luminance of the light emitting device 3 and the thickness of the light guide layer 23.
  • the front luminance of the light emitting device 3 is measured along the AA'line shown in FIG. 2, and the brightness of the light emitted from the first light emitting element 21 and the second light emitting element 22 is adjusted to be the same. ..
  • the vertical axis of FIG. 4 shows the fluctuation range of the peak and the bottom of the front luminance
  • the horizontal axis shows the thickness (mm) of the light guide layer 23.
  • the front luminance of the light emitted from the light emitting device 3 is maximum immediately above the first light emitting element 21 and the second light emitting element 22, and minimum at the intermediate point between the first light emitting element 21 and the second light emitting element 22. become.
  • the curve W401 shows the fluctuation range which is the difference between the peak value (maximum value) and the bottom value (minimum value) of the front luminance.
  • the fluctuation range of the front luminance shown by the curve W401 is standardized with the value when the thickness of the light guide layer 23 is zero, that is, when the light guide layer 23 is not arranged as 100%.
  • the fluctuation range of the front luminance of the light emitted from the first light emitting element 21 and the second light emitting element 22 decreases as the light guide layer 23 becomes thicker, and the change becomes smaller when the thickness of the light guide layer 23 exceeds 1 mm. Become.
  • FIG. 5 is an explanatory diagram of an example of a lower limit of the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23, and is shown in FIG. It is sectional drawing of the light emitting device 3 along the-A'line.
  • FIG. 5 is exaggerated so that the distance between the first light emitting element 21 and the second light emitting element 22 becomes long.
  • the positions of the surface of the light guide layer 23 are the first position 23a, the second position 23b, and the third position 23c.
  • the first position 23a is the position of the surface of the light guide layer 23 when it is the lower limit value
  • the second position 23b is the position of the surface of the light guide layer 23 when it is longer than the lower limit value
  • the third position 23c is the position of the surface of the light guide layer 23. It is the position of the surface of the light guide layer 23 when it is shorter than the lower limit value.
  • the distance between the LED die 24 of the first light emitting element 21 and the LED die 24 of the adjacent second light emitting element 22 is LG1, and the distance between the LED die 24 of the adjacent first light emitting element 21 is LG2.
  • the distance between the LED die 24 of the first light emitting element 21 and the LED die 24 of the second light emitting element 22 arranged apart from each other via the first light emitting element 21 and the second light emitting element 22 is LG3.
  • the light beam P1 is emitted from the side of the first light emitting element 21 facing the second light emitting element 22, and is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the light beam P2 is emitted from the side of the second light emitting element 22 facing the first light emitting element 21, and is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 which is the first position 23a is indicated by T1.
  • the thickness T1 between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is a critical angle ⁇ c when light is emitted from the light guide layer 23 into the air.
  • the distance between the first light emitting element 21 and the second light emitting element 22 from LG1.
  • T1 LG1 / (2tan ⁇ c) (1) Indicated by.
  • the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is T1
  • the LED die of the first light emitting element 21 and the second light emitting element 22 At the intersection 27 where the midline between 24 and the surface of the light guide layer 23 intersect, the light rays P1 and the light rays P2 intersect.
  • the position of the surface of the light guide layer 23 is the second position 23b, and the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is larger than that of T1. When thick, no dark lines occur. When the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is thicker than T1, the outside of the surface of the light guide layer 23 at the intersection 27. Light is emitted to.
  • the position of the surface of the light guide layer 23 is the third position 23c, and the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is T1.
  • T1 When it is thinner than, a band-shaped dark part is generated.
  • the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is thinner than T1, the surface of the light guide layer 23 is in the vicinity of the intersection 27. No light is emitted from the outside.
  • the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is T1 or more, light is emitted from the entire surface of the light guide layer 23. , The uniformity of the light brightness emitted from the light emitting device 3 is improved.
  • the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is T1 or more, light having high luminance uniformity is emitted.
  • the brightness of the light emitted from the lighting fixture on which the light emitting device 3 is mounted is further made uniform.
  • FIG. 6 is an explanatory diagram of an optimum value and an upper limit value of the thickness T between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23, and is shown in FIG. It is sectional drawing of the light emitting device 3 along the line AA'shown.
  • the light ray P1 is emitted from the side of the LED die 24 of the first light emitting element 21 facing the second light emitting element 22, and is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the light ray P3 is emitted from the side of the LED die 24 of the first light emitting element 21 adjacent to the LED die 24 of the first light emitting element 21 via the second light emitting element 22 facing the second light emitting element 22. Then, it is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the position of the surface of the light guide layer 23 is the fourth position 23d, and the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is T2. At that time, the light rays P1 and the light rays P3 intersect at the intersection 28 on the surface of the light guide layer 23.
  • the light emitting device 3 the light emitted in the direction directly upward from the second light emitting element 22 is emitted from the surface of the light guide layer 23 to the outside in the vicinity of the intersection 28 on the surface of the light guide layer 23.
  • the light emitting device 3 evenly emits light rays from the surface of the light guide layer 23 to the outside.
  • the refractive index of the light guide layer 23 formed of the silicone resin is 1.4, and the critical angle ⁇ c is about 45 °.
  • the distance LG1 between the LED die 24 of the first light emitting element 21 and the LED die 24 of the second light emitting element 22 is 0.3 mm, and the LED die 24 of the first light emitting element 21 and the LED die 24 of the first light emitting element 21
  • the distance LG2 to and from is 2.3 mm.
  • T1 calculated by the equation (1) is 0.15 mm.
  • T2 calculated by the equation (2) is 1.15 mm.
  • the curve W401 is saturated when the thickness T of the light guide layer 23 exceeds 1 mm, the amount of change, that is, the amount of attenuation becomes small.
  • the fluctuation range of the front luminance corresponding to the curve W401 is such that the thickness T between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is about 80% of T2. Saturates with a value.
  • the value of the curve W401 is about 95%. be.
  • the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is 1.15 mm, that is, T2, the value of the curve W401 is about 75%. be.
  • the thickness T between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is T1 or more, and the thickness T of the emitted light is Brightness uniformity is improved.
  • the thickness T between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is in the vicinity of T1, the uniformity of the brightness of the emitted light is uniform. It is preferable to provide a diffusion layer above the light guide layer 23 in order to further improve the above.
  • the thickness T of the light guide layer 23 when the thickness T of the light guide layer 23 is increased, the luminous efficiency is lowered and the handleability is lowered.
  • the thickness T between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 becomes 1.0 mm or more, the fluctuation range of the front luminance is saturated.
  • the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is preferably T1 or more and T2'or less. .. Specifically, the thickness T between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is 1.0 mm or more and 1.5 mm or less. It is preferable to have.
  • the light guide layer 23 is preferably thin in order to suppress a decrease in luminous efficiency, it is between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23.
  • T2 is the optimum value for the thickness T.
  • the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is 0.5 mm, that is, the fluctuation range of the front luminance is from the vicinity of 0.5T2. Since it becomes smaller, the thickness T is more preferably 0.5 T2 or more and T2'or less.
  • the light emitting device 3 is intermediate between the light emitted from the first light emitting element 21 and the second light emitting element 22 by adjusting the relative intensity of the light emitted from the first light emitting element 21 and the second light emitting element 22.
  • FIG. 7 is a plan view of the light emitting device according to the second embodiment.
  • the number of the first light emitting element 21 and the second light emitting element 22 mounted on the light emitting device 4 is different from that of the light emitting device 3. Since the configuration and function of the light emitting device 4 other than the number of the first light emitting element 21 and the second light emitting element 22 to be mounted are the same as the configuration and function of the light emitting device 3, detailed description thereof will be omitted here.
  • the first light emitting element 21 and the second light emitting element 22 are arranged in a 7 ⁇ 7 matrix on the surface of the substrate 20. Further, the first light emitting element 21 and the second light emitting element 22 are arranged in a checkered pattern on the surface of the substrate 20.
  • FIG. 8 is an explanatory diagram of a lower limit value of the thickness T between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23, and FIG. It is sectional drawing of the light emitting device 4 along the'line.
  • the distance between the LED dies 24 of the adjacent first light emitting elements 21 via one second light emitting element 22 is LG1, and they are arranged so as to sandwich the one first light emitting element 21 and the two second light emitting elements 22.
  • the distance between the LED dies 24 of the two first light emitting elements 21 is LG2.
  • the distance between the LED dies 24 of the first light emitting element 21 arranged so as to sandwich the two first light emitting elements 21 and the three second light emitting elements 22 is LG3.
  • the light beam P1 is emitted from the side of the LED die 24 of the first light emitting element 21 facing the second light emitting element 22, and is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the light ray P2 is the first on the side of the first light emitting element 21 that emits the light ray P1 of the LED die 24 of the first light emitting element 21 adjacent to the first light emitting element 21 that emits the light ray P1 via one second light emitting element 22.
  • the light emitting element 22 emits light from the side facing the light emitting element 22 and is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 which is the first position 23a is indicated by T1.
  • the thickness T1 between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is a critical angle ⁇ c when light is emitted from the light guide layer 23 into the air.
  • the position of the surface of the light guide layer 23 is the second position 23b, and the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is T1 or more. At one point, the light emitted from the first light emitting element 21 and the second light emitting element 22 is mixed over the entire surface of the light guide layer 23.
  • the position of the surface of the light guide layer 23 is the third position 23c, and the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is larger than that of T1. When it is thin, the light emitted from the first light emitting element 21 and the second light emitting element 22 does not mix colors in the vicinity of the intersection 27.
  • FIG. 9 is an explanatory diagram of an optimum value and an upper limit value of the thickness T between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23, and is shown in FIG. It is sectional drawing of the light emitting device 4 along the BB'line shown.
  • the light ray P1 is emitted from the side of the LED die 24 of the first light emitting element 21 facing the second light emitting element 22, and is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the light ray P3 emits the light ray P1 of the LED die 24 of the first light emitting element 21 adjacent to the first light emitting element 21 that emits the light ray P1 via one first light emitting element 21 and two second light emitting elements 22. It emits light from the side facing the second light emitting element 22 on the first light emitting element 21 side, and is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the position of the surface of the light guide layer 23 is the fourth position 23d, and the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is T2. At that time, the light rays P1 and the light rays P3 intersect at the intersection 28 on the surface of the light guide layer 23.
  • the thickness T2 between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 is a critical angle ⁇ c when light is emitted from the light guide layer 23 to the air. It has a relationship represented by the formula (2) with the separation distance LG2 between the LED dies 24 of the first light emitting element 21 adjacent to each other via one first light emitting element 21 and two second light emitting elements 22. Since the light guide layer 23 is preferably thin in order to suppress a decrease in luminous efficiency, it is between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23. T2 is the optimum value for the thickness T.
  • the light emitting device 4 is the first by setting the thickness between the surface of the LED die 24 of the first light emitting element 21 and the second light emitting element 22 and the surface of the light guide layer 23 to be T1 or more and T2 or less. It is possible to improve the color mixing property of the light emitted from the light emitting element 21 and the second light emitting element 22.
  • FIG. 10 is a plan view of the light emitting device according to the third embodiment.
  • the light emitting device 5 is arranged in a delta manner, and the first light emitting element 31, the second light emitting element 32, and the third light emitting element 33, each of which emits light having a wavelength corresponding to an RGB color, are combined with the first light emitting element 21 and the second light emitting element. It is different from the light emitting device 3 in that it has instead of the element 22. Since the components and functions of the light emitting device 5 other than the first light emitting element 31, the second light emitting element 32 and the third light emitting element 33 are the same as the components and functions of the light emitting device 3 having the same reference numerals. , Detailed description is omitted here.
  • the first light emitting element 31 is formed of a blue LED die 24, a phosphor that emits red light such as CASN, and a silicone resin that coats the blue LED die, and emits red light.
  • the main wavelength of the red light emitted from the first light emitting element 31 is in the range between 600 nm and 680 m, and is 660 nm in one example.
  • the second light emitting element 32 is formed of a blue LED die 24 and a silicone resin that contains a phosphor that emits green light such as YAG and that coats the blue LED die 24, and emits green light.
  • the main wavelength of the green light emitted from the second light emitting element 32 is in the range between 500 nm and 570 m, and in one example, it is 550 nm.
  • the third light emitting element 33 is formed by the blue LED die 24 and emits blue light.
  • the main wavelength of the blue light emitted from the third light emitting element 33 is in the range between 445 nm and 495 nm, and is 450 nm in one example.
  • the LED die 24 included in the first light emitting element 31 is also referred to as a first LED die
  • the LED die 24 included in the second light emitting element 32 is also referred to as a second LED die
  • the LED die included in the third light emitting element 33. 24 is also referred to as a third LED die.
  • the distance between the LED dies 24 of the first light emitting element 31 arranged adjacent to each other is LG1, and the distance between the LED dies 24 of the first light emitting element 31 arranged so as to sandwich the first light emitting element 31. Is LG2.
  • the thickness T between the surface of the LED die 24 of the first light emitting element 31, the second light emitting element 32, and the third light emitting element 33 and the surface of the light guide layer 23 is the first light emitting element 31 arranged adjacent to each other.
  • the distance between the LED dies 24 and LG1 is T1 or more calculated by the equation (1).
  • first light emitting element 31 between the surface of the LED die 24 of the first light emitting element 31, the second light emitting element 32 and the third light emitting element 33 and the surface of the light guide layer 23. It is T2 or less calculated by the equation (2) from the distance LG2 between the first light emitting elements 31.
  • the thickness T is set between the LED dies 24 of the first light emitting element 31 arranged adjacent to each other in the direction in which the distance between the first light emitting elements 31 and the LED dies 24 is the shortest. It may be a value of T1 or more calculated by the equation (1) from the distance.
  • the thickness T is between the LED dies 24 of the first light emitting element 31 arranged adjacent to each other in the direction in which the distance between the first light emitting elements 31 and the LED dies 24 arranged adjacent to each other is the longest. It may be a value of T2 or less calculated by the equation (2) from the distance.
  • the thickness T is arranged adjacently in the direction in which the distance between the first light emitting element 31, the second light emitting element 32, and the LED die 24 of the third light emitting element 33, which are arranged adjacent to each other, is the longest. It may be a value of T1 or more calculated by the equation (1) from the distance between each of the LED die 24 of the second light emitting element 32 and the third light emitting element 33. Further, the thickness T is arranged adjacent to each other in the direction in which the distance between the first light emitting element 31, the second light emitting element 32, and the LED die 24 of the third light emitting element 33 arranged adjacent to each other is the shortest.
  • the value may be T2 or less calculated by the equation (2) from the distances between the LED dies 24 of the second light emitting element 32 and the third light emitting element 33.
  • the light emitting device 5 may be arranged so as to cover the light guide layer 23, and may further have a diffusion layer that diffuses the light guided by the light guide layer 23.
  • FIG. 11 is a plan view of the light emitting device according to the fourth embodiment
  • FIG. 12A is a cross-sectional view (No. 1) of the light emitting device along the line CC shown in FIG. 11, and
  • FIG. 12B is shown in FIG. Is a cross-sectional view (No. 2) of the light emitting device along the line CC shown in FIG. 11 shown in FIG.
  • the light emitting device 6 includes a substrate 40, a first light emitting element 41, a reflective material 42, a light guide layer 43, and a diffusion layer 44.
  • the substrate 40 has the same configuration and function as the substrate 20.
  • the first light emitting element 41 is formed by a blue LED die and emits blue light.
  • the main wavelength of the blue light emitted from the first light emitting device 41 is in the range between 445 nm and 495 nm, and is 450 nm in one example.
  • the reflective material 42 is formed of a silicone resin containing white particles such as titanium oxide, and is arranged so as to surround the first light emitting element 41.
  • the light guide layer 43 has a phosphor layer 45 and a transparent layer 46.
  • the phosphor layer 45 is a silicone resin containing a phosphor such as YAG that absorbs the light emitted from the first light emitting element 41 and emits yellow light. It is a silicone resin.
  • the transparent layer 46 is a silicone resin that transmits light emitted from the phosphor contained in the first light emitting element 15 and the phosphor layer 17.
  • the diffusion layer 44 is a diffuser containing a filler in a silicone resin, a sheet containing diffusion particles, a coated fine particle powder, a prism, or the like, and is preferably one having a large amount of forward scattering and a small amount of backscattering.
  • the diffusion layer 44 may be a light transmitting plate whose front surface or back surface is textured.
  • the diffusion layer 44 improves the uniformity of luminance and color mixing on the surface of the transparent layer 46. Further, since the light is emitted from the entire surface of the diffusion layer 44, when the light emitting device 6 is attached to the lighting equipment, the degree of diffusion of the diffusion member included in the lighting equipment can be reduced, and the decrease in the luminous efficiency is suppressed.
  • the diffusion layer 44 may be omitted.
  • the thickness T between the surface of the first light emitting element 41 and the surface of the light guide layer 43 is T1 or more calculated by the equation (1) from the distance between the first light emitting elements 41 arranged adjacent to each other. be. Further, it is T2 or less calculated by the equation (2) from the distance between the two first light emitting elements 41 arranged so as to sandwich the first light emitting element 41.
  • the thickness Tk of the diffusion layer 44 is preferably thicker than 0 mm and thinner than the thickness T between the surface of the first light emitting element 41 and the surface of the light guide layer 43.
  • the thickness Tk of the diffusion layer 44 is thicker than 0.3 times the thickness T between the surface of the first light emitting element 41 and the surface of the light guide layer 43, and is the surface of the LED die of the first light emitting element 41. It is more preferably thinner than 0.5 times the thickness T between the light guide layer 43 and the surface.
  • the thickness T between the surface of the first light emitting element 41 and the surface of the light guide layer 43 is 1.0 mm or more and 1.5 mm or less, assuming that the thickness of the diffusion layer 44 is 0.5 mm.
  • the fluctuation range of the front luminance of the light from the first light emitting element 41 is a good value of 40%.
  • the total luminous flux of the light from the first light emitting element 41 is 7.5 as compared with the case where the diffusion layer 44 is not arranged. %descend.
  • the thickness of the light guide layer 43 is 1.25 mm and the thickness of the diffusion layer 44 is 0.5 mm
  • the total luminous flux of the light from the first light emitting element 41 is the case where the diffusion layer 44 is not arranged. It is reduced by 3.9% as compared with the case where the light guide layer 43 is not arranged, and the reduction of the total luminous flux is suppressed as compared with the case where the light guide layer 43 is not arranged.
  • the thickness T between the surface of the first light emitting element 41 and the surface of the light guide layer 43 is 1.0 mm or more and 1.5 mm or less
  • the thickness of the diffusion layer 44 is 0.5 mm.
  • the thickness Tk of the diffusion layer 44 is included in a range thicker than 0.3 times and thinner than 0.5 times the thickness T.
  • the yellow ring is formed in the vicinity of the inner wall of the reflector 42 without mixing the blue light emitted from the first light emitting element 41 and the yellow light emitted from the phosphor contained in the phosphor layer 45. This is a phenomenon in which a yellow ring is generated.
  • the separation distance between the first light emitting element 41 arranged adjacent to the reflective material 42 and the reflective material 42 is LB1
  • the light ray P4 is the reflective material 42 of the first light emitting element 41. It emits light from the side facing the light guide layer 23 and is incident on the surface of the light guide layer 23 at a critical angle ⁇ c.
  • the separation distance LB1 is the minimum between the angle between the reflective material 42 and the angle at which at least a part of two sides is not surrounded by the other first light emitting element 41 and not surrounded by the other first light emitting element 41. The distance.
  • the separation distance between the first light emitting element 41 arranged adjacent to the reflective material 42 via the other first light emitting element 41 and the reflective material 42 is LB2.
  • the light beam P5 is emitted from the side of the first light emitting element 41 adjacent to the reflective material 42 via the other first light emitting element 41 and is opposed to the reflective material 42, and is emitted from the surface of the light guide layer 23.
  • the maximum value T4 of the thickness T between the surface of the first light emitting element 41 and the surface of the light guide layer 43 is adjacent to each other via the other first light emitting element 41 in the first light emitting element 41.
  • T4 LB2 / tan ⁇ c (4) Indicated by. That is, the separation distance LB2 between the first light emitting element 41 arranged adjacent to the reflective material 42 via the other first light emitting element 41 and the reflective material 42 is longer than Ttan ⁇ c.
  • FIG. 13 (a) is a cross-sectional view of a light emitting device according to a first modification
  • FIG. 13 (b) is a cross-sectional view of a light emitting device according to a second modification
  • FIG. 13 (c) is a third modification. It is sectional drawing of the light emitting device which concerns on.
  • 13 (d) is a cross-sectional view of the light emitting device according to the fourth modification
  • FIG. 13 (e) is a cross-sectional view of the light emitting device according to the fifth modification.
  • 13 (a) to 13 (e) are cross-sectional views corresponding to the cross-sectional views taken along the line AA'shown in FIG.
  • the light emitting device 7a according to the first modification is different from the light emitting device 3 in that the light emitting device 50 and the light guide layer 51 are provided in place of the light guide layer 23. Since the components and functions of the light emitting device 7a other than the reflector 50 and the light guide layer 51 are the same as the components and functions of the light emitting device 3 having the same reference numerals, detailed description thereof will be omitted here. ..
  • the reflective material 50 is formed of a silicone resin containing white particles such as titanium oxide, and is arranged so as to surround the first light emitting element 21 and the second light emitting element 22.
  • the light guide layer 51 is a silicone resin filled in a region surrounded by the reflective material 50, and transmits light emitted from the first light emitting element 21 and the second light emitting element 22.
  • the light guide layer 51 is formed by solidifying the resin material before solidification by heating the substrate 20 after the resin material before solidification is filled in the reflective material 50.
  • the light emitting devices 3 to 5 do not have a reflective material
  • the light emitting devices 3 to 5 are arranged on the substrate so as to surround the plurality of first light emitting elements, and further have a reflective material that reflects the light emitted from the first light emitting element. May be good.
  • the light emitting device 7b according to the second modification is different from the light emitting device 7a in that it has a diffusion layer 52. Since the components and functions of the light emitting device 7b other than the diffusion layer 52 are the same as the components and functions of the light emitting device 7a having the same reference numerals, detailed description thereof will be omitted here.
  • the diffusion layer 52 is a sheet containing diffusion particles, coated fine particle powder, a prism, or the like, and by adhering the back surface to the surface of the light guide layer 51, the light guide layer 52 is formed. Connected to 51.
  • the light emitting device 7b can emit light having high luminance uniformity and color mixing property.
  • the light emitting devices 3 to 5 do not have a diffusion layer, they may be arranged so as to cover the light guide layer, and may further have a diffusion layer that diffuses the light guided by the light guide layer.
  • the light emitting device 7c according to the third modification is different from the light emitting device 7b in that the diffusion layer 53 is provided in place of the diffusion layer 52. Since the components and functions of the light emitting device 7c other than the diffusion layer 53 are the same as the components and functions of the light emitting device 7b having the same reference numerals, detailed description thereof will be omitted here.
  • the diffusion layer 53 is different from the diffusion layer 52 in that the diffusion portion 53a is formed above the first light emitting element 21 and the second light emitting element 22.
  • the diffuser portion 53a is formed above the first light emitting element 21 and the second light emitting element 22 having high brightness of the emitted light, so that the light having high brightness is efficiently mixed and emitted. It is possible to emit light having high luminance uniformity and color mixing while suppressing a decrease in efficiency.
  • the light emitting device 7d according to the fourth modification is different from the light emitting device 7b in that the light guide layer 54 and the diffusion layer 55 are provided in place of the light guide layer 51 and the diffusion layer 52. Since the components and functions of the light emitting device 7d other than the light guide layer 54 and the diffusion layer 55 are the same as the components and functions of the light emitting device 7b having the same reference numerals, detailed description thereof will be omitted here. ..
  • the light guide layer 54 differs from the light guide layer 51 in that the surface shape of the light guide layer 54 is curved in a convex shape.
  • the diffusion layer 55 is different from the diffusion layer 53 in that the diffusion layer 55 has a curved shape so that the central portion protrudes upward according to the shape of the surface of the light guide layer 54. Since the light guide layer 54 and the diffusion layer 55 have a lens shape curved so that the central portion protrudes upward, the light emitting device 7d can emit light having high directivity.
  • the light emitting device 7e according to the fifth modification is different from the light emitting device 7a in that the frame material 56 and the adhesive layer 57 are provided in place of the reflective material 50 and the light guide layer 51. Since the components and functions of the light emitting device 7e other than the frame material 56 and the adhesive layer 57 are the same as the components and functions of the light emitting device 7a having the same reference numerals, detailed description thereof will be omitted here.
  • the frame material 56 has a diffusion frame 58 and a light guide unit 59.
  • the diffusion frame 58 has a side portion arranged so as to surround the first light emitting element 21 and the second light emitting element 22, and an upper portion covering the upper part of the first light emitting element 21 and the second light emitting element 22.
  • the light emitted from the light emitting element 21 and the second light emitting element 22 is diffused and emitted to the outside.
  • the side surface of the diffusion frame that covers the side surface of the light guide portion 59 functions as a reflection frame because the thickness of the side surface covers the light guide portion 59 is thicker than that of the diffusion portion that covers the surface of the light guide portion.
  • the light guide portion 59 is formed of a member that transmits light emitted from the first light emitting element 21 and the second light emitting element 22 such as a silicone resin, and is integrated with the diffusion frame 58.
  • the adhesive layer 57 is formed of a member that transmits light emitted from the first light emitting element 21 and the second light emitting element 22 such as a silicone resin, and is an adhesive member that adheres the frame material 56 to the substrate 20.
  • the frame material 56 has the diffusion frame 58 and the light guide portion 59, the reflective material, which is also called a dam material, is not arranged, so that the manufacturing process can be simplified. Further, in the light emitting device 7e, since the diffusion frame 58 and the light guide unit 59 are integrated by the frame material 56, it is easy to uniformly manufacture the thickness of the light guide unit 59. Further, in the light emitting device 7e, the diffusion layer having a desired diffusion degree can be easily formed by adjusting the diffusion degree of the diffusion frame 58.
  • the frame material 56 functions as a reflection frame by increasing the thickness of the side surface of the light guide unit 59, but in the light emitting layer device according to the embodiment, a material having high reflectance is applied to the side surface of the light guide unit 59. It may be arranged.
  • FIG. 14A is a cross-sectional view of the light emitting device according to the sixth modification
  • FIG. 14B is a cross-sectional view of the light emitting device according to the seventh modification
  • FIG. 14C is an eighth modification.
  • FIG. 14 (d) is a cross-sectional view of the light emitting device according to the ninth modification.
  • 14 (e) is an enlarged view of the portion indicated by the arrow D in FIG. 14 (a)
  • FIG. 14 (f) is an enlarged view of the portion indicated by the arrow E in FIG. 14 (b).
  • 14 (a) to 14 (d) are cross-sectional views corresponding to the cross-sectional views taken along the line AA'shown in FIG.
  • the light emitting device 8a is different from the light emitting device 7b in that it has the white resin 60. Since the components and functions of the light emitting device 8a other than the white resin 60 are the same as the components and functions of the light emitting device 7b having the same reference numerals, detailed description thereof will be omitted here.
  • the white resin 60 is formed of a silicone resin containing white particles such as titanium oxide, and is arranged between the first light emitting element 21 and the second light emitting element 22.
  • the white resin 60 is arranged between the first light emitting element 21 and the second light emitting element 22, so that the amount of light absorbed by the substrate 40 can be suppressed and the light emitting efficiency can be improved.
  • the reflective material 50 and the diffusion layer 53 may be omitted.
  • the light emitting device 8b is different from the light emitting device 8a in that the first light emitting element 61 and the second light emitting element 62 are provided in place of the first light emitting element 21 and the second light emitting element 22. Since the components and functions of the light emitting device 8b other than the first light emitting element 61 and the second light emitting element 62 are the same as the components and functions of the light emitting device 8a having the same reference numerals, detailed description thereof will be given here. Is omitted.
  • the first light emitting element 61 and the second light emitting element 62 are arranged so that the side surfaces of the fluorescent resin of the first light emitting element 61 and the second light emitting element 62 do not stand upright but open outward. It is different from the 1 light emitting element 21 and the 2nd light emitting element 22.
  • the white resin 60 in the light emitting device 8a, by arranging the white resin 60 between the first light emitting element 61 and the second light emitting element 62, the white resin 60 functions as a reflective material, and the light emitting efficiency can be further improved.
  • the reflective material 50 and the diffusion layer 53 may be omitted.
  • the light emitting device 8c is different from the light emitting device 8a in that it has the white resin 60a instead of the white resin 60. Further, the light emitting device 8c is different from the light emitting device 8a in that it has the transparent resin 60b. Since the components and functions of the light emitting device 8c other than the white resin 60a and the transparent resin 60b are the same as the components and functions of the light emitting device 8a having the same reference numerals, detailed description thereof will be omitted here.
  • the white resin 60a is different from the white resin 60 in that a recess in which the transparent resin 60b is arranged is formed between the first light emitting element 21 and the second light emitting element 22. Since the configuration and function of the white resin 60a other than the formation of the recesses are the same as the configuration and function of the white resin 60, detailed description thereof will be omitted here.
  • the transparent resin 60b is arranged between the first light emitting element 21 and the second light emitting element 22 and the white frame 63.
  • the transparent resin 60b is arranged along the side surface of the phosphor resin 25 of the first light emitting element 21 and the second light emitting element 22, and is arranged so that the side surface opens outward toward the upper side.
  • the light emitting device 8d differs from the light emitting device 8a in that the white frame 63 and the frame material 64 are provided in place of the reflective material 50, the light guide layer 51, the diffusion layer 52, and the white resin 60. Since the components and functions of the light emitting device 8d other than the white frame 63 and the frame material 64 are the same as the components and functions of the light emitting device 8a having the same reference numerals, detailed description thereof will be omitted here.
  • the white frame 63 is formed of a white resin material having a higher rigidity than the white resin 60, and a plurality of insertion holes into which the first light emitting element 21 and the second light emitting element 22 are inserted are formed.
  • the frame material 64 has a light guide layer 65 and a diffusion layer 66 adhered to the light guide layer 65.
  • the light guide layer 65 is a transparent sheet that transmits light emitted from the first light emitting element 21 and the second light emitting element 22, and the diffusion layer 66 is emitted from the first light emitting element 21 and the second light emitting element 22. It is a diffusion sheet that diffuses light.
  • FIG. 15 is a cross-sectional view of the light emitting device according to the tenth modification.
  • the light emitting device 6a is different from the light emitting device 6 in that the light guide layer 47 is provided in place of the light guide layer 43. Since the components and functions of the light emitting device 6a other than the light guide layer 47 are the same as the components and functions of the light emitting device 6 having the same reference numerals, detailed description thereof will be omitted here.
  • the light guide layer 47 differs from the light guide layer 43 in that the light guide layer 47 has a phosphor layer 48 instead of the phosphor layer 45.
  • the phosphor layer 48 is unevenly distributed in the vicinity of the periphery of the first light emitting element 41.
  • the phosphor layer 48 is formed by sedimentation, coating, electrophoresis and the like of the phosphor.
  • the thickness T between the surface of the first light emitting element 41 and the surface of the light guide layer 47 is T1 or more calculated by the equation (1) from the distance between the first light emitting elements 41 arranged adjacent to each other. be. Further, from the distance between the two first light emitting elements 41 arranged so as to sandwich the one first light emitting element 41 between the surface of the first light emitting element 41 and the surface of the light guide layer 23, according to the equation (2). It is T2 or less calculated.
  • the thickness T between the surface of the first light emitting element 41 and the surface of the light guide layer 47 is T3 calculated by the equation (3) from the distance between the first light emitting elements 41 arranged adjacent to each other. That is all. Further, from the distance between the two first light emitting elements 41 arranged so as to sandwich the one first light emitting element 41 between the surface of the first light emitting element 41 and the surface of the light guide layer 23, according to the equation (4). It is T4 or less calculated.
  • the light emitting device 6a transmits the light emitted from the first light emitting element 41 and the light emitted from the phosphor contained in the phosphor layer 48 unevenly distributed in the vicinity of the periphery of the first light emitting element 41 through the transparent layer 46. By emitting light, it is possible to emit light having a high color mixing property.
  • FIG. 16 is a perspective view of the light emitting device according to the eleventh modification.
  • the light emitting device 9 has a substrate 70, a first light emitting element 71, a light guide layer 72, and a connector 73.
  • the substrate 70 is, for example, a glass epoxy substrate, and a wiring pattern for connecting the first light emitting element 71 and the connector 73 is formed.
  • the first light emitting element 71 is an SMD type light emitting element, and is arranged in a 4 ⁇ 4 matrix at the center of the surface of the substrate 70.
  • the light guide layer 72 is formed of a silicone resin and is arranged so as to cover the first light emitting element 71.
  • the thickness of the light guide layer 72 is derived from the distance between the first light emitting elements 71 arranged adjacent to each other. It is T1 or more calculated by the formula (1). Further, the equation (from the distance between the two first light emitting elements 71 arranged so as to sandwich the one first light emitting element 71 between the surface of the LED die of the first light emitting element 71 and the surface of the light guide layer 72 ( It is T2 or less calculated by 2).
  • the light emitting device 9 can realize the same optical characteristics as the COB type light emitting device by using the SMD type light emitting element. Further, the light emitting device 9 has a plurality of electronic components mounted on the substrate 70, and further has a control circuit for controlling light emission of the plurality of first light emitting elements and the like, whereby various controls such as dimming are possible. The light emitting device can be mounted on a single substrate.
  • FIG. 17 is a perspective view of the light emitting device according to the twelfth modification.
  • the light emitting device 9a includes a substrate 80, a first light emitting element 81, a second light emitting element 82, a frame material 83, and an electronic component 84.
  • the substrate 80 is a glass epoxy substrate, and a pair of electrodes 80a are arranged, and between the first light emitting element 81, the second light emitting element 82, the electronic component 84, and the pair of electrodes 80a.
  • a wiring pattern to be connected is formed.
  • the first light emitting element 81 and the second light emitting element 82 are CSP type light emitting elements like the first light emitting element 21 and the second light emitting element 22, and emit cold and warm colors.
  • the frame member 83 has a reflective portion 85 and a light guide portion 86 which is a light guide layer integrally molded with the reflective portion 85.
  • the reflecting unit 85 is a frame material formed of a synthetic resin that reflects light emitted from the first light emitting element 81 and the second light emitting element 82, and surrounds the first light emitting element 81 and the second light emitting element 82. Be placed.
  • the light guide unit 86 is a frame material formed of a synthetic resin that transmits light emitted from the first light emitting element 81 and the second light emitting element 82, and covers the first light emitting element 81 and the second light emitting element 82. Is placed in.
  • the electronic component 84 includes a resistor, a capacitor, a MOSFET, a semiconductor device, and the like, and realizes various controls such as flicker suppression and dimming.
  • the light emitting device can emit light with high color mixing while suppressing a decrease in luminous flux by arranging a light guide layer having a predetermined thickness between the light emitting element and the diffusion layer. can.
  • the light emitting device according to the present disclosure can suppress the fluctuation range of the brightness of the emitted light by about 20% to 30% as compared with the case where the light guide layer is not provided. ..
  • the light emitting device according to the present disclosure has a diffusion layer in addition to the light guide layer, it can be suppressed by about 40% to 60% as compared with the case where the light guide layer is not provided.
  • the light emitting device suppresses the fluctuation range of the chromaticity of the emitted light by about 3% to 30% as compared with the case without the light guide layer by having the light guide layer. be able to. Further, since the light emitting device according to the present disclosure has a diffusion layer in addition to the light guide layer, it can be suppressed by about 45% to 75% as compared with the case where the light guide layer is not provided.
  • the light guide layer is formed of a silicone resin, but in the light emitting device according to the present disclosure, the light guide layer is a synthesis of an epoxy resin, a polymethylmethacrylate resin, a polycarbonate resin, a polystyrene resin, or the like. It may be formed of a resin. Further, in the light emitting device described, the light guide layer is formed of a silicone resin which is a single resin, but may be formed by laminating a plurality of synthetic resins having different refractive indexes. When the light guide layer is formed by laminating a plurality of synthetic resins having different refractive indexes, the thickness of the light guide layer is determined by calculating the equations (1) to (4) for each resin layer. Ru.
  • the reflective layer may be formed by a plurality of reflective layers arranged so as to be superimposed on the substrate.
  • the central portion of the reflective layer arranged at the uppermost stage may be arranged outside the central portion of the other reflective layers. ..
  • the central portion of the reflective layer arranged at the uppermost stage is arranged outside the central portion of the other reflective layers, so that when the resin before solidification of the light guide layer is filled inside the reflective material, it is guided.
  • the resin before solidification of the light layer does not crawl up to the uppermost reflective layer, and a flat light guide layer can be formed.
  • the light emitting element used in the above description is an LED die 24 or the like that emits blue light coated with a fluorescent resin or the like.
  • a light emitting device equipped with a color filter when one white LED is arranged in an area partitioned by one color of the color filter and another white LED is arranged in an area partitioned by another color, one section and an area thereof are arranged.
  • the set of white LEDs is made into a light emitting element.
  • the entire color filter and the set of white LEDs correspond to the light emitting element.
  • the micro LED and the organic EL in which the fine light emitting portions are arranged also hold the relationship described with reference to the equations (1) to (4).
  • the light emitting device according to the present disclosure may be used as a display.
  • the light emitting device according to the present disclosure can improve the uniformity of the brightness and the color mixing property of the emitted light without lowering the resolution.

Landscapes

  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
PCT/JP2021/024370 2020-06-29 2021-06-28 発光装置 Ceased WO2022004663A1 (ja)

Priority Applications (3)

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US18/013,356 US11817530B2 (en) 2020-06-29 2021-06-28 Light emitting device
CN202180046699.3A CN115735081B (zh) 2020-06-29 2021-06-28 发光装置
JP2022533999A JP7125570B2 (ja) 2020-06-29 2021-06-28 発光装置

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JP2020111283 2020-06-29
JP2020-111283 2020-06-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115171545A (zh) * 2022-07-22 2022-10-11 京东方智慧物联科技有限公司 一种发光装置、显示装置及灯具

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240145439A1 (en) * 2022-10-31 2024-05-02 Creeled, Inc. Light-emitting diode devices with support elements for improved near-field and far-field emissions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006189665A (ja) * 2005-01-06 2006-07-20 Citizen Electronics Co Ltd 発光ダイオードを用いたｌｃｄバックライト
JP2008198460A (ja) * 2007-02-13 2008-08-28 Omron Corp 発光素子及び面照明装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4174303B2 (ja) * 2002-11-21 2008-10-29 Ｎｅｃ液晶テクノロジー株式会社 直下型バックライト
JP4667803B2 (ja) 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
JP5176273B2 (ja) 2005-12-28 2013-04-03 日亜化学工業株式会社 発光装置及びその製造方法
JP2008041290A (ja) 2006-08-02 2008-02-21 Akita Denshi Systems:Kk 照明装置及びその製造方法
JP2009093808A (ja) * 2007-10-03 2009-04-30 Sharp Corp 照明装置および液晶表示装置
JP5394631B2 (ja) * 2007-10-24 2014-01-22 株式会社ジャパンディスプレイ 液晶表示装置
JP2010182809A (ja) * 2009-02-04 2010-08-19 Stanley Electric Co Ltd 半導体発光装置
US8488216B2 (en) * 2009-02-20 2013-07-16 Nisca Corporation LED light source and image reading apparatus
CN102315371A (zh) * 2010-07-05 2012-01-11 松下电工株式会社 发光装置
CN102315361A (zh) * 2010-07-06 2012-01-11 盈胜科技股份有限公司 应用于发光二极管封装结构的具有荧光层的光学透镜
JP2012186274A (ja) * 2011-03-04 2012-09-27 Sharp Corp 発光装置、ｌｅｄチップ、ｌｅｄウェハ、およびパッケージ基板
WO2014065178A1 (ja) * 2012-10-24 2014-05-01 シャープ株式会社 導光板、バックライト装置及び液晶表示装置
JP6102273B2 (ja) * 2013-01-18 2017-03-29 日亜化学工業株式会社 発光装置及びその製造方法
JP6095479B2 (ja) 2013-05-17 2017-03-15 シチズン時計株式会社 Ｌｅｄモジュール
WO2017047815A1 (ja) * 2015-09-18 2017-03-23 シチズン電子株式会社 発光装置
KR102469363B1 (ko) 2017-09-25 2022-11-23 엘지이노텍 주식회사 조명 모듈 및 이를 구비한 조명 장치
US10957825B2 (en) 2017-09-25 2021-03-23 Lg Innotek Co., Ltd. Lighting module and lighting apparatus having thereof
KR101951303B1 (ko) * 2017-10-31 2019-02-22 엘지디스플레이 주식회사 백라이트 유닛 및 이를 포함하는 액정표시장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006189665A (ja) * 2005-01-06 2006-07-20 Citizen Electronics Co Ltd 発光ダイオードを用いたｌｃｄバックライト
JP2008198460A (ja) * 2007-02-13 2008-08-28 Omron Corp 発光素子及び面照明装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115171545A (zh) * 2022-07-22 2022-10-11 京东方智慧物联科技有限公司 一种发光装置、显示装置及灯具
CN115171545B (zh) * 2022-07-22 2024-10-29 京东方智慧物联科技有限公司 一种发光装置、显示装置及灯具

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CN115735081A (zh) 2023-03-03
CN115735081B (zh) 2025-12-16
JPWO2022004663A1 (https=) 2022-01-06
US11817530B2 (en) 2023-11-14
JP7125570B2 (ja) 2022-08-24
US20230231082A1 (en) 2023-07-20

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