WO2021256016A1 - 電磁波検出器および電磁波検出器アレイ - Google Patents

電磁波検出器および電磁波検出器アレイ Download PDF

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WO2021256016A1
WO2021256016A1 PCT/JP2021/009541 JP2021009541W WO2021256016A1 WO 2021256016 A1 WO2021256016 A1 WO 2021256016A1 JP 2021009541 W JP2021009541 W JP 2021009541W WO 2021256016 A1 WO2021256016 A1 WO 2021256016A1
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Prior art keywords
electromagnetic wave
layer
dimensional material
material layer
wave detector
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English (en)
French (fr)
Japanese (ja)
Inventor
政彰 嶋谷
新平 小川
昌一郎 福島
聡志 奥田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to EP21827112.0A priority Critical patent/EP4167302A4/en
Priority to JP2022532297A priority patent/JP7550854B2/ja
Priority to US17/918,578 priority patent/US20230147241A1/en
Priority to CN202180040678.0A priority patent/CN115699338B/zh
Publication of WO2021256016A1 publication Critical patent/WO2021256016A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

Definitions

  • This disclosure relates to an electromagnetic wave detector and an electromagnetic wave detector array.
  • Patent Document 1 proposes a detector having the following structure. That is, in the detector of Patent Document 1, two or more dielectric layers are provided on the n-type semiconductor layer. A graphene layer is formed on the two dielectric layers and on the surface portion of the n-type semiconductor layer located between the two dielectric layers.
  • the graphene layer and the n-type semiconductor layer are Schottky-bonded.
  • Source / drain electrodes connected to both ends of the graphene layer are arranged on the dielectric layer.
  • the gate electrode is connected to the n-type semiconductor layer.
  • the sensitivity of the detector depends on the quantum efficiency of the semiconductor layer. Therefore, it is not possible to sufficiently amplify the optical carrier, and it is difficult to increase the sensitivity of the detector.
  • a main object of the present disclosure is to provide an electromagnetic wave detector and an electromagnetic wave detector array having higher detection sensitivity than the above-mentioned detector.
  • the electromagnetic wave detector according to the present disclosure includes a semiconductor layer, a two-dimensional material layer electrically connected to the semiconductor layer, and a first electrode electrically connected to the two-dimensional material layer without a semiconductor layer.
  • a second electrode portion electrically connected to the two-dimensional material layer via the semiconductor layer, and a strong dielectric layer in contact with at least a part of the two-dimensional material layer are provided.
  • an electromagnetic wave detector and an electromagnetic wave detector array having higher detection sensitivity than the above detector.
  • FIG. It is a plane schematic diagram of the electromagnetic wave detector which concerns on Embodiment 1.
  • FIG. It is sectional drawing of the line segment II-II of FIG. It is a flowchart for demonstrating the manufacturing method of the electromagnetic wave detector which concerns on Embodiment 1.
  • FIG. It is a cross-sectional schematic diagram in the line segment VV of FIG. It is sectional drawing which shows the 1st modification of the electromagnetic wave detector which concerns on Embodiment 2.
  • FIG. It is sectional drawing which shows the 2nd modification of the electromagnetic wave detector which concerns on Embodiment 2.
  • FIG. It is a plane schematic diagram of the electromagnetic wave detector which concerns on Embodiment 3.
  • FIG. 3 is a schematic cross-sectional view of the line segment IX-IX of FIG. It is a plane schematic diagram of the electromagnetic wave detector which concerns on Embodiment 4.
  • FIG. 3 is a schematic cross-sectional view taken along the line segment XI-XI of FIG. It is a plane schematic diagram which shows the 1st modification of the electromagnetic wave detector which concerns on Embodiment 4.
  • FIG. It is sectional drawing of the line segment XIII-XIII of FIG. It is a plane schematic diagram which shows the 2nd modification of the electromagnetic wave detector which concerns on Embodiment 4.
  • FIG. It is sectional drawing in FIG. 14 line segment XV-XV. It is sectional drawing of the electromagnetic wave detector which concerns on Embodiment 5.
  • FIG. 14 line segment XV-XV.
  • FIG. 3 is a schematic plan view of an electromagnetic wave detector according to a tenth embodiment. It is sectional drawing of the line segment XXIII-XXIII of FIG. 22.
  • FIG. 6 is a schematic cross-sectional view taken along the line segment XXIV-XXIV of FIG. 22.
  • FIG. 5 is a schematic cross-sectional view taken along the line segment XXVI-XXVI of FIG. 25. It is a plane schematic diagram which shows the 2nd modification of the electromagnetic wave detector which concerns on Embodiment 10.
  • FIG. 6 is a schematic cross-sectional view taken along the line segment XXVIII-XXVIII of FIG. 27. It is sectional drawing of the electromagnetic wave detector which concerns on Embodiment 11. FIG. It is sectional drawing which shows the modification of the electromagnetic wave detector which concerns on Embodiment 11. It is sectional drawing of the electromagnetic wave detector which concerns on Embodiment 12.
  • the figure is schematic and conceptually explains the function or structure. Further, the present disclosure is not limited by the embodiments described below. Unless otherwise specified, the basic configuration of the electromagnetic wave detector is common to all embodiments. Further, those having the same reference numerals are the same or equivalent as described above. This is common to the entire text of the specification.
  • the electromagnetic wave detector will be described using a configuration for detecting visible light or infrared light, but the present disclosure is not limited thereto.
  • An embodiment described below is a detector that detects radio waves such as X-rays, ultraviolet light, near-infrared light, terahertz (THz) waves, or microwaves in addition to visible light or infrared light. It is also effective as.
  • these light and radio waves are collectively referred to as electromagnetic waves.
  • p-type graphene or n-type graphene may be used as graphene.
  • graphene having more holes than true graphene is referred to as p-type graphene
  • graphene having more electrons is referred to as n-type graphene.
  • the n-type or p-type term may be used for the material of the member in contact with graphene, which is an example of the two-dimensional material layer.
  • the n-type material is a material having an electron-donating property
  • the p-type material is a material having an electron-withdrawing property.
  • the charge is biased in the whole molecule, and the one in which electrons are dominant is called n-type, and the one in which holes are dominant is called p-type.
  • these materials either one of organic substances and inorganic substances or a mixture thereof can be used.
  • plasmon resonance phenomena such as surface plasmon resonance, which is the interaction between the metal surface and light, and pseudo-surface plasmon resonance in the sense of resonance on the metal surface outside the visible and near-infrared regions.
  • these resonances are referred to as surface plasmon resonance, plasmon resonance, or simply resonance.
  • graphene is described as an example of the material of the two-dimensional material layer, but the material constituting the two-dimensional material layer is not limited to graphene.
  • the materials for the two-dimensional material layer include transition metal dichalcogenide (TMD), black phosphorus (Black Phosphorus), silicene (two-dimensional honeycomb structure with silicon atoms), and germanene (two-dimensional honeycomb structure with germanium atoms).
  • TMD transition metal dichalcogenide
  • Black Phosphorus Black Phosphorus
  • silicene two-dimensional honeycomb structure with silicon atoms
  • germanene two-dimensional honeycomb structure with germanium atoms
  • transition metal dichalcogenide include transition metal dichalcogenides such as MoS 2 , WS 2 , and WSe 2 .
  • These materials have a structure similar to graphene, and are materials that allow atoms to be arranged in a single layer in a two-dimensional plane. Therefore, even when these materials are applied to the two-dimensional material layer, the same action and effect as when graphene is applied to the two-dimensional material layer can be obtained.
  • FIG. 1 is a schematic plan view of the electromagnetic wave detector according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view of the line segment II-II of FIG.
  • the electromagnetic wave detectors shown in FIGS. 1 and 2 include a two-dimensional material layer 1, a first electrode portion 2a, a second electrode portion 2b, an insulating film 3, a semiconductor layer 4, and a ferroelectric layer 5. Mainly prepared for.
  • the ferroelectric layer 5 has sensitivity to the wavelength of the electromagnetic wave to be detected by the electromagnetic wave detector. When the ferroelectric layer 5 is irradiated with an electromagnetic wave having a wavelength to be detected, the polarization changes in the ferroelectric layer 5.
  • the resistance value of the two-dimensional material layer 1 and the ferroelectric layer 5 changes when the polarization changes in the ferroelectric layer 5. It is provided as follows.
  • the semiconductor layer 4 has a first surface and a second surface located on the side opposite to the first surface. As shown in FIGS. 1 and 2, the two-dimensional material layer 1, the first electrode portion 2a, the insulating film 3, and the ferroelectric layer 5 are arranged on the first surface of the semiconductor layer 4.
  • the second electrode portion 2b is arranged on the second surface of the semiconductor layer 4.
  • the portions located on the opposite side of the semiconductor layer 4 with respect to each of the two-dimensional material layer 1, the first electrode portion 2a, the insulating film 3, and the dielectric layer 5 are respectively.
  • the upper part is called the upper part, and the part located on the semiconductor layer 4 side with respect to each of the two-dimensional material layer 1, the first electrode portion 2a, the insulating film 3, and the dielectric layer 5 is called the lower part of each.
  • the semiconductor layer 4 is made of a semiconductor material such as silicon (Si). Specifically, as the semiconductor layer 4, a silicon substrate or the like doped with impurities is used.
  • the semiconductor layer 4 may have a multilayer structure, or a pn junction photodiode, a pin photodiode, a shotkey photodiode, or an avalanche photodiode may be used. Further, a phototransistor may be used as the semiconductor layer 4.
  • the silicon substrate has been described as an example as described above, but other materials may be used as the material constituting the semiconductor layer 4.
  • compound semiconductors such as germanium (Ge), III-V group or II-V group semiconductors, mercury cadmium tellurium (HgCdTe), indium antimonide (InSb), lead selenium (PbSe), and the like.
  • PbS Lead sulfur
  • CdS cadmium sulfur
  • GaN gallium nitride
  • SiC silicon carbide
  • GaP gallium phosphide
  • InGaAs indium gallium arsenide
  • InAs indium arsenide
  • quantum well Alternatively, a substrate containing quantum dots, a single material such as Type II superlattice, or a material in which they are combined may be used.
  • the semiconductor layer 4 and the semiconductor layer 4 are doped with impurities so that the electrical resistivity of the semiconductor layer 4 and the semiconductor layer 4 is 100 ⁇ ⁇ cm or less. ..
  • the moving speed (reading speed) of the carriers in the semiconductor layer 4 and the semiconductor layer 4 becomes high. As a result, the response speed of the electromagnetic wave detector is improved.
  • the thickness T1 of the semiconductor layer 4 is preferably 10 ⁇ m or less. By reducing the thickness T1 of the semiconductor layer 4, the deactivation of the carrier is reduced.
  • a power supply circuit for applying a bias voltage V is electrically connected between the first electrode portion 2a and the second electrode portion 2b.
  • the power supply circuit is a circuit for applying a voltage V to the two-dimensional material layer 1.
  • An ammeter (not shown) for detecting the current I in the two-dimensional material layer 1 is connected to the power supply circuit.
  • the insulating film 3 is arranged on the first surface of the semiconductor layer 4.
  • the insulating film 3 has a lower surface in contact with the first surface of the semiconductor layer 4 and an upper surface located on the side opposite to the lower surface.
  • the insulating film 3 is formed with an opening that exposes a part of the first surface of the semiconductor layer 4. The opening extends from the upper surface to the lower surface. At least a part of the upper surface of the insulating film 3 is in contact with the lower surface of the two-dimensional material layer 1. In other words, the insulating film 3 is arranged below the two-dimensional material layer 1.
  • an insulating film made of silicon oxide can be used as the insulating film 3.
  • the material constituting the insulating film 3 is not limited to the above-mentioned silicon oxide, and other insulating materials may be used.
  • a material constituting the insulating film 3 tetraethyl orthosilicate, silicon nitride, hafnium oxide, aluminum oxide, nickel oxide, boron nitride, a siloxane-based polymer material, or the like may be used.
  • boron nitride has an atomic arrangement similar to that of graphene, contact with the two-dimensional material layer 1 made of graphene does not adversely affect the mobility of electric charge. Therefore, boron nitride is suitable as a material constituting the insulating film 3 from the viewpoint of suppressing the insulating film 3 from impairing the performance of the two-dimensional material layer 1 such as electron mobility.
  • the thickness T2 of the insulating film 3, that is, the distance between the lower surface and the upper surface of the insulating film 3 is particularly limited as long as the first electrode portion 2a is insulated from the semiconductor layer 4 and no tunnel current is generated. Not done. Further, the insulating film 3 does not have to be arranged below the two-dimensional material layer 1.
  • the first electrode portion 2a is arranged on the upper surface of the insulating film 3.
  • the first electrode portion 2a is arranged at a position away from the opening of the insulating film 3.
  • the first electrode portion 2a has a lower surface in contact with the upper surface of the insulating film 3, an upper surface located on the opposite side of the lower surface, and a side surface extending in a direction intersecting the upper surface.
  • the second electrode portion 2b is arranged on the second surface of the semiconductor layer 4.
  • any material can be used as long as it is a conductor.
  • a metal material such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), or palladium (Pd) can be used. ..
  • an adhesion layer (not shown) may be formed between the first electrode portion 2a and the insulating film 3 or between the second electrode portion 2b and the semiconductor layer 4.
  • the adhesion layer enhances the adhesion between the first electrode portion 2a and the insulating film 3 or the adhesion between the second electrode portion 2b and the semiconductor layer 4.
  • Any material can be used as the material constituting the adhesion layer, but a metal material such as chromium (Cr) or titanium (Ti) may be used.
  • first electrode portion 2a is formed in the lower part of the two-dimensional material layer 1 in FIG. 2, the first electrode portion 2a may be formed in the upper part of the two-dimensional material layer 1.
  • the second electrode portion 2b is provided on the entire surface of the second surface of the semiconductor layer 4, but the second electrode portion 2b may be in contact with at least a part of the semiconductor layer 4.
  • the second electrode portion 2b may be provided so as to come into contact with a part of the first surface, the second surface, and the side surface extending in the direction intersecting the first surface of the semiconductor layer 4.
  • Such an electromagnetic wave detector can detect an electromagnetic wave incident from the second surface side. As shown in FIG.
  • the electromagnetic wave detector in which the second electrode portion 2b is provided on the entire surface of the second surface is suitable when the electromagnetic wave to be detected is incident only from the first surface side. be.
  • the electromagnetic wave detector shown in FIG. 2 the electromagnetic wave incident from the first surface side and transmitted through the ferroelectric layer 5 and the semiconductor layer 4 is reflected by the second electrode portion 2b and reaches the ferroelectric layer 5 again. Therefore, the absorption rate of electromagnetic waves in the ferroelectric layer 5 is increased.
  • the two-dimensional material layer 1 is arranged on the first electrode portion 2a, the insulating film 3, and the semiconductor layer 4.
  • the two-dimensional material layer 1 extends from the inside of the opening of the insulating film 3 to the first electrode portion 2a.
  • a part of the two-dimensional material layer 1 is arranged on the first electrode portion 2a and is in contact with the first electrode portion 2a.
  • the other part of the two-dimensional material layer 1 is arranged inside the opening of the insulating film 3 and is in contact with the semiconductor layer 4.
  • the two-dimensional material layer 1 is arranged below the ferroelectric layer 5 and is in contact with the ferroelectric layer 5.
  • the two-dimensional material layer 1 is arranged between the first electrode portion 2a, the insulating film 3, the semiconductor layer 4, and the ferroelectric layer 5.
  • the two-dimensional material layer 1 includes a first portion electrically connected to the semiconductor layer 4, a second portion electrically connected to the first electrode portion 2a, and a first portion. Includes a third portion that electrically connects to and from the second portion.
  • the first portion is arranged on the first surface of the semiconductor layer 4 in the opening of the insulating film 3.
  • the first portion is arranged below the ferroelectric layer 5.
  • the first portion is arranged between the semiconductor layer 4 and the ferroelectric layer 5, and is in contact with each of the semiconductor layer 4 and the ferroelectric layer 5.
  • the first portion is Schottky bonded to the semiconductor layer 4.
  • the second part is arranged on the upper surface of the insulating film 3.
  • a part of the second portion is arranged on the upper surface of the first electrode portion 2a.
  • At least a portion of the second portion is located below the ferroelectric layer 5.
  • the second portion is arranged between the first electrode portion 2a and the ferroelectric layer 5, and is in contact with each of the first electrode portion 2a and the ferroelectric layer 5.
  • the third portion is arranged on the upper surface of the insulating film 3 and on the inner peripheral surface of the opening of the insulating film 3.
  • the third portion is arranged between the insulating film 3 and the ferroelectric layer 5, and is in contact with each of the insulating film 3 and the ferroelectric layer 5.
  • the insulating film 3 separates the third portion of the two-dimensional material layer 1 from the semiconductor layer 4.
  • the thicknesses of the first portion, the second portion, and the third portion of the two-dimensional material layer 1 are, for example, equal to each other.
  • the upper surface of the two-dimensional material layer 1 is formed with irregularities caused by the first portion, the second portion, and the third portion.
  • the distance between the upper surface of the first portion and the first surface of the semiconductor layer 4 is less than the distance between the upper surface of the second portion and the first surface of the semiconductor layer 4.
  • the two-dimensional material layer 1 includes a region in contact with the ferroelectric layer 5 and a region in contact with the semiconductor layer 4.
  • the ferroelectric layer 5 is formed in at least one of a region in contact with the ferroelectric layer 5 and a region in contact with the semiconductor layer 4 of the two-dimensional material layer 1 with respect to the extending direction of the two-dimensional material layer 1. It is provided so that an electric field in the vertical direction is generated.
  • the two-dimensional material layer 1 in FIG. 2 extends from the first electrode portion 2a side (left side in FIG. 2) to the opposite side (right side in FIG. 2) with respect to the center of the opening of the insulating film 3.
  • the end portion (right end) located on the opposite side of the first electrode portion 2a of the two-dimensional material layer 1 may be arranged on the left side with respect to the center of the opening of the insulating film 3.
  • the two-dimensional material layer 1 in FIG. 2 is arranged so as to expose a part of the first surface of the semiconductor layer 4 at the opening of the insulating film 3, but the present invention is not limited to this.
  • the two-dimensional material layer 1 may be arranged so as to cover the entire first surface of the semiconductor layer 4 at the opening of the insulating film 3.
  • the end portion (right end) of the two-dimensional material layer 1 located on the opposite side of the first electrode portion 2a is arranged on the insulating film 3 located on the opposite side of the first electrode portion 2a with respect to the opening. You may.
  • a single layer of graphene for example, a single layer of graphene can be used.
  • Single-layer graphene is a monatomic layer of two-dimensional carbon crystals.
  • single-layer graphene has carbon atoms in each chain arranged in a hexagonal shape.
  • the two-dimensional material layer 1 may be configured as a multilayer graphene in which two or more layers of single-layer graphene are laminated.
  • non-doped graphene or graphene doped with p-type or n-type impurities may be used as the two-dimensional material layer 1.
  • the multi-layer graphene used as the two-dimensional material layer 1 may or may not have the same orientation of the lattice vectors of the hexagonal lattice in any two-layer graphene. For example, by laminating two or more layers of graphene, a band gap is formed in the two-dimensional material layer 1. As a result, it is possible to have a wavelength selection effect of the electromagnetic wave to be photoelectrically converted. As the number of layers in the multilayer graphene constituting the two-dimensional material layer 1 increases, the mobility of carriers in the channel region decreases.
  • the two-dimensional material layer 1 is less susceptible to carrier scattering from the underlying structure such as the substrate, and as a result, the noise level is lowered. Therefore, the electromagnetic wave detector using the multilayer graphene as the two-dimensional material layer 1 can increase the light absorption and increase the detection sensitivity of the electromagnetic wave.
  • the carrier is doped from the first electrode portion 2a to the two-dimensional material layer 1.
  • gold Au
  • holes are generated in the two-dimensional material layer 1 in the vicinity of the first electrode portion 2a due to the difference in work functions between the two-dimensional material layer 1 and Au. Doped.
  • the electromagnetic wave detector is driven in the electron conduction state in this state, the movement of electrons flowing in the channel region of the two-dimensional material layer 1 due to the influence of the holes doped in the two-dimensional material layer 1 from the first electrode portion 2a. The degree decreases, and the contact resistance between the two-dimensional material layer 1 and the first electrode portion 2a increases.
  • the mobility of electrons (carriers) due to the electric field effect in the electromagnetic wave detector decreases, and the performance of the electromagnetic wave detector may deteriorate.
  • the doping amount of the carrier injected from the first electrode portion 2a is large. Therefore, the decrease in electron mobility in the electromagnetic wave detector is particularly remarkable when single-layer graphene is used as the two-dimensional material layer 1. Therefore, when the two-dimensional material layer 1 is entirely formed of single-layer graphene, the performance of the electromagnetic wave detector may deteriorate.
  • the first portion of the two-dimensional material layer 1 in which the carriers from the first electrode portion 2a are easily doped may be composed of multilayer graphene.
  • Multilayer graphene has less carrier doping from the first electrode portion 2a than single layer graphene. Therefore, it is possible to suppress an increase in contact resistance between the two-dimensional material layer 1 and the first electrode portion 2a. As a result, it is possible to suppress the above-mentioned decrease in electron mobility in the electromagnetic wave detector, and it is possible to improve the performance of the electromagnetic wave detector.
  • a nanoribbon-shaped graphene (hereinafter, also referred to as graphene nanoribbon) can be used.
  • the two-dimensional material layer 1 for example, either a simple graphene nanoribbon, a composite in which a plurality of graphene nanoribbons are laminated, or a structure in which graphene nanoribbons are periodically arranged on a plane can be used. ..
  • a structure in which graphene nanoribbons are periodically arranged is used as the two-dimensional material layer 1, plasmon resonance can be generated in the graphene nanoribbons.
  • the sensitivity of the electromagnetic wave detector can be improved.
  • the structure in which graphene nanoribbons are periodically arranged is sometimes called a graphene metamaterial. Therefore, the above-mentioned effect can be obtained even in an electromagnetic wave detector using a graphene metamaterial as the two-dimensional material layer 1.
  • the ferroelectric layer 5 is arranged on the two-dimensional material layer 1. That is, the ferroelectric layer 5 is arranged on the side opposite to the semiconductor layer 4 with respect to the two-dimensional material layer 1. The ferroelectric layer 5 is in contact with the two-dimensional material layer 1. The ferroelectric layer 5 is arranged on each of the first portion, the second portion, and the third portion of the two-dimensional material layer 1, and the first portion and the first portion of the two-dimensional material layer 1 are arranged. It is in contact with each of the second part and the third part.
  • the ferroelectric layer 5 is arranged on the upper part of the first portion of the two-dimensional material layer 1, and has a fourth portion in contact with the first portion and a two-dimensional material layer 1. It is arranged on the upper part of the second part and is arranged on the upper part of the fifth part which is in contact with the second part and the third part of the two-dimensional material layer 1, and is in contact with the third part. It has a sixth part that is used.
  • the thicknesses of the fourth portion, the fifth portion, and the sixth portion of the ferroelectric layer 5 are, for example, equal to each other.
  • the upper surface of the two-dimensional material layer 1 is formed with irregularities caused by the first portion, the second portion, and the third portion.
  • the distance between the upper surface of the first portion and the first surface of the semiconductor layer 4 is less than the distance between the upper surface of the second portion and the first surface of the semiconductor layer 4.
  • any material can be used as long as it is a material that causes polarization with respect to the detection wavelength.
  • the materials constituting the ferroelectric layer 5 are, for example, BaTIO 3 (barium titanate), LiNbO 3 (lithium niobate), LiTaO 3 (lithium tantalate), SrTiO 3 (strontium titanate), and PZT (lead zirconate titanate).
  • the ferroelectric layer 5 may be made by laminating and mixing different ferroelectric materials.
  • the material constituting the ferroelectric layer 5 is not limited to the above-mentioned ferroelectric material, and may be any pyroelectric material that exerts a pyroelectric effect.
  • the material constituting the ferroelectric layer 5 may be any ferroelectric substance whose polarization changes with respect to changes in thermal energy. Since electromagnetic waves simply act as a heat source in the pyroelectric effect, the pyroelectric effect is basically wavelength-independent. Therefore, the ferroelectric layer 5 is sensitive to electromagnetic waves in a wide band.
  • the ferroelectric layer 5 is designed so that the rate of change of the dielectric polarization in the ferroelectric layer 5 is as short as possible.
  • the thickness of the ferroelectric layer 5 is preferably thin as long as it is possible to give a polarization change to the two-dimensional material layer 1.
  • the electromagnetic wave detector may further include a Mott insulator that is in contact with the ferroelectric layer 5 and whose physical properties (for example, temperature) change due to a photoinduced phase transition caused by light irradiation.
  • a Mott insulator that is in contact with the ferroelectric layer 5 and whose physical properties (for example, temperature) change due to a photoinduced phase transition caused by light irradiation.
  • the ferroelectric layer 5 is arranged so as to overlap with at least one of the first portion, the second portion, and the third portion of the two-dimensional material layer 1, and is contained in the ferroelectric layer 5. It may be provided so that the resistance value of the two-dimensional material layer 1 changes when the polarization of the two-dimensional material layer 1 changes.
  • the film thickness of the ferroelectric layer 5 is preferably such that when an electromagnetic wave is applied to the graphene layer 1, an electric field as large as possible is applied to the graphene layer 1.
  • the polarization direction of the ferroelectric layer 5 is not particularly limited, but is preferably perpendicular to the plane direction of the two-dimensional material layer.
  • a protective film (not shown) may be formed on the two-dimensional material layer 1.
  • the protective film may be provided so as to cover the periphery of the two-dimensional material layer 1, the semiconductor layer 4, the first electrode portion 2a, and the ferroelectric layer 5.
  • Any material can be used as the material constituting the protective film, and for example, an insulating film made of silicon oxide can be used as the protective film.
  • an insulator such as an oxide or a nitride, for example, silicon oxide, silicon nitride, hafnium oxide, aluminum oxide, boron nitride or the like may be used.
  • FIG. 3 is a flowchart for explaining a method of manufacturing the electromagnetic wave detector according to the first embodiment. A method for manufacturing the electromagnetic wave detector shown in FIGS. 1 and 2 will be described with reference to FIG.
  • the preparation step (S1) shown in FIG. 3 is carried out.
  • the semiconductor layer 4 which is a flat substrate made of, for example, silicon is prepared.
  • the electrode forming step (S2) is carried out.
  • the second electrode portion 2b is formed on the back surface of the semiconductor layer 4.
  • a protective film is formed on the surface of the semiconductor layer 4.
  • a resist is used as the protective film.
  • the second electrode portion 2b is formed on the back surface of the semiconductor layer 4.
  • a metal such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr) can be used. ..
  • the adhesion layer may be formed on the back surface of the semiconductor layer 4 before the second electrode portion 2b.
  • the material of the adhesion layer for example, copper (Cr) or titanium (Ti) can be used.
  • the above step (S2) may be performed after the steps (S3 to 7) as long as the surface of the semiconductor layer 4 is protected.
  • the insulating film forming step (S3) is carried out.
  • the insulating film 3 is formed on the surface of the semiconductor layer 4.
  • the insulating film 3 may be silicon oxide (SiO2) formed by partially thermal-oxidizing the surface of the semiconductor layer 4.
  • an insulating layer may be formed on the surface of the semiconductor layer 4 by a CVD (Chemical Vapor Deposition) method or a sputtering method.
  • the electrode forming step (S4) is carried out.
  • the first electrode portion 2a is formed on the insulating film 3.
  • a metal such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr) is used.
  • an adhesion layer may be formed between the insulating film 3 and the first electrode portion 2a.
  • the material constituting the adhesion layer for example, chromium (Cr), titanium (Ti) or the like can be used.
  • the following process can be used. First, a resist mask is formed on the surface of the insulating film 3 by using photoengraving or EB drawing. In the resist mask, an opening is formed in a region where the first electrode portion 2a should be formed. After that, a film such as metal to be the first electrode portion 2a is formed on the resist mask. A thin-film deposition method, a sputtering method, or the like can be used to form the film. At this time, the film is formed so as to extend from the inside of the opening of the resist mask to the upper surface of the resist mask.
  • the other part of the film arranged in the opening of the resist mask remains on the surface of the insulating film 3 and becomes the first electrode portion 2a. ..
  • the method described above is generally called a lift-off method.
  • a film such as a metal film to be the first electrode portion 2a is first formed on the surface of the insulating film 3. Then, a resist mask is formed on the film by a photolithography method. The resist mask is formed so as to cover the region where the first electrode portion 2a should be formed, but is not formed in a region other than the region where the first electrode portion 2a should be formed. Then, the film is partially removed by wet etching or dry etching using a resist mask as a mask. As a result, a part of the film remains under the resist mask. A part of this film becomes the first electrode portion 2a. After that, the resist mask is removed. In this way, the first electrode portion 2a may be formed.
  • the opening forming step (S5) is carried out.
  • this step (S5) an opening is formed in the insulating film 3.
  • a resist mask is formed on the insulating film 3 by using photoengraving or EB drawing.
  • the resist mask an opening is formed in a region where the opening of the insulating film 3 should be formed.
  • the insulating film 3 is partially removed using the resist mask as a mask by wet etching or dry etching to form an opening.
  • the resist mask is removed.
  • the above step (S5) may be performed before the step (S4).
  • the two-dimensional material layer forming step (S6) is carried out.
  • the two-dimensional material layer 1 is formed so as to cover the entire part of the semiconductor layer 4 exposed in the first electrode portion 2a, the insulating film 3, and the opening of the insulating film 3.
  • an atomic layer material such as graphene or a molecular layer material may be used.
  • the two-dimensional material layer 1 may be formed by any method.
  • the two-dimensional material layer 1 may be formed by epitaxial growth, or the two-dimensional material layer 1 previously formed by the CVD method is transferred onto the first electrode portion 2a, the insulating film 3, and a part of the semiconductor layer 4. And paste it.
  • the two-dimensional material layer 1 may be formed by screen printing or the like. Further, the two-dimensional material layer 1 peeled off by mechanical peeling or the like may be transferred onto the first electrode portion 2a or the like described above.
  • a resist mask is formed on the two-dimensional material layer 1 by using photoengraving or the like. The resist mask is formed so as to cover the region where the two-dimensional material layer 1 remains, but is not formed in the region where the two-dimensional material layer 1 does not remain. Then, using a resist mask as a mask, the two-dimensional material layer 1 is partially removed by etching with oxygen plasma. As a result, unnecessary parts of the two-dimensional material layer are removed to form the two-dimensional material layer 1 as shown in FIGS. 1 and 2. After that, the resist mask is removed.
  • the ferroelectric layer forming step (S7) is carried out.
  • the ferroelectric layer 5 is formed on the two-dimensional material layer 1.
  • Materials for forming the ferroelectric layer 5 include, for example, BaTiO3 (barium titanate), LiNbO3 (lithium niobate), LiTaO3 (lithium niobate), SrTiO3 (strontium titanate), PZT (lead zirconate titanate), SBT.
  • the ferroelectric layer 5 may be formed by any method.
  • a polymer film is formed by a spin coating method or the like, and then processed by a photolithography method.
  • a method called lift-off may be used in which the resist mask is used as a mask to form a ferroelectric material and then the resist mask is removed.
  • the electromagnetic wave detectors shown in FIGS. 1 and 2 can be obtained.
  • the two-dimensional material layer 1 is formed on the first electrode portion 2a, but the two-dimensional material layer 1 is formed in advance on the insulating film 3 and is partially above the two-dimensional material layer 1.
  • the first electrode portion 2a may be formed so as to overlap with the above.
  • care must be taken not to give process damage to the two-dimensional material layer 1 when the first electrode portion 2a is formed.
  • a power supply circuit for applying a voltage V is electrically connected between the first electrode portion 2a and the second electrode portion 2b, and the first electrode portion 2a and the two-dimensional material layer 1 are connected.
  • the semiconductor layer 4, and the second electrode portion 2b are electrically connected in the order described.
  • a voltage V is applied between the first electrode portion 2a and the second electrode portion 2b.
  • the voltage V is set to have a reverse bias with respect to the Schottky junction between the two-dimensional material layer 1 and the semiconductor layer 4.
  • An ammeter (not shown) is installed in the power supply circuit, and the ammeter monitors the current I flowing through the two-dimensional material layer 1.
  • the ferroelectric layer 5 is irradiated with electromagnetic waves.
  • the pyroelectric effect of the ferroelectric layer 5 causes a change in the dielectric polarization inside the ferroelectric layer 5.
  • the change in polarization in the ferroelectric layer 5 gives an electric field change to the two-dimensional material layer 1.
  • a pseudo gate voltage is applied to the two-dimensional material layer 1, and the resistance value in the two-dimensional material layer 1 changes. This is called the optical gate effect.
  • the current I which is the optical current flowing in the two-dimensional material layer 1, changes.
  • the electromagnetic wave radiated to the electromagnetic wave detector can be detected.
  • the semiconductor layer 4 constituting the semiconductor layer 4 is made of p-type material silicon and the two-dimensional material layer 1 is made of n-type material graphene, the two-dimensional material layer 1 and the semiconductor layer 4 are Schottky-bonded.
  • the current I can be reduced to zero by adjusting the voltage V and applying a reverse bias to the Schottky junction. That is, the electromagnetic wave detector according to the present embodiment can be turned off.
  • the dielectric polarization of the ferroelectric layer 5 changes due to the pyroelectric effect, and the Fermi level of the two-dimensional material layer 1 is modulated to form the two-dimensional material layer 1.
  • the energy barrier of the semiconductor layer 4 is lowered. As a result, the current flows through the semiconductor layer 4 and the current I is detected only when the electromagnetic wave is irradiated.
  • the electromagnetic wave detector according to the present embodiment is not limited to the configuration for detecting the change in the current in the two-dimensional material layer 1 as described above, and is, for example, the first electrode portion 2a and the second electrode portion 2a.
  • a constant current may be passed between the electrode portion 2b and the change in the voltage V between the first electrode portion 2a and the second electrode portion 2b (that is, the change in the voltage value in the two-dimensional material layer 1) may be detected.
  • electromagnetic waves may be detected by using two or more of the same electromagnetic wave detectors. For example, prepare two or more of the same electromagnetic wave detectors. One electromagnetic wave detector is placed in a shielded space that is not irradiated with electromagnetic waves. Another electromagnetic wave detector is placed in the space where the electromagnetic wave to be measured is irradiated. Then, the difference between the current I or voltage V of the other electromagnetic wave detector irradiated with the electromagnetic wave and the current I or voltage V of the electromagnetic wave detector arranged in the shielded space is detected. In this way, the electromagnetic wave may be detected.
  • the vicinity of the junction interface between the two-dimensional material layer 1 and the semiconductor layer 4 is applied.
  • a depletion layer is formed in.
  • the range of detection wavelengths of the electromagnetic wave detector is determined according to the absorption wavelength of lithium niobate.
  • the change rate of the dielectric polarization of the ferroelectric layer 5 is designed to be as short as possible, the time from the electromagnetic wave incident on the electromagnetic wave detector to the change of the resistance value in the two-dimensional material layer 1 occurs. It gets shorter. According to such an electromagnetic wave detector, the delay in amplification due to the optical gate effect is eliminated, and high-speed response can be achieved.
  • the electromagnetic wave detector according to the present embodiment is electrically connected to the semiconductor layer 4, the two-dimensional material layer 1 electrically connected to the semiconductor layer 4, and the two-dimensional material layer 1 without going through the semiconductor layer 4.
  • the first electrode portion 2a that is connected, the second electrode portion 2b that is electrically connected to the two-dimensional material layer 1 via the semiconductor layer 4, and at least a part of the two-dimensional material layer 1 are in contact with each other.
  • the strong dielectric layer 5 is provided.
  • the resistance value of the two-dimensional material layer 1 may change when the polarization in the ferroelectric layer 5 changes due to the pyroelectric effect.
  • the conductivity of the two-dimensional material layer 1 is modulated by the optical gate effect, and as a result, the optical current can be amplified in the two-dimensional material layer 1.
  • the amount of current change in the two-dimensional material layer 1 due to the change in polarization in the ferroelectric layer 5 is larger than the amount of current change in a normal semiconductor.
  • a large current change occurs with respect to a slight potential change as compared with a normal semiconductor.
  • the thickness of the two-dimensional material layer 1 is one atomic layer, which is extremely thin.
  • the mobility of electrons in single-layer graphene is high.
  • the current change amount in the two-dimensional material layer 1 calculated from the electron mobility and thickness in the two-dimensional material layer 1 is about several hundred times to several thousand times the current change amount in a normal semiconductor. Will be.
  • the efficiency of extracting the detected current in the two-dimensional material layer 1 is greatly improved.
  • Such an optical gate effect does not directly enhance the quantum efficiency of a photoelectric conversion material such as a normal semiconductor, but increases the current change due to the incident of electromagnetic waves. Therefore, the quantum efficiency of the electromagnetic wave detector, which is equivalently calculated from the difference current due to the incident of the electromagnetic wave, can exceed 100%. Therefore, the detection sensitivity of the electromagnetic wave by the electromagnetic wave detector according to the present embodiment is higher than that of the conventional semiconductor electromagnetic wave detector or the graphene electromagnetic wave detector to which the optical gate effect is not applied.
  • the electromagnetic wave detector according to the present embodiment further includes an insulating film 3 which is in contact with a part of the semiconductor layer 4 and has an opening formed to open another part of the semiconductor layer 4.
  • the two-dimensional material layer 1 is electrically connected to the other part of the semiconductor layer 4 at the opening, and specifically, is Schottky-bonded to the semiconductor layer 4. Since the two-dimensional material layer 1 and the semiconductor layer 4 are Schottky-bonded, no current flows when the reverse bias is applied, and the electromagnetic wave detector can be turned off.
  • the two-dimensional material layer 1 since the two-dimensional material layer 1 has a region arranged on the insulating film 3, the two-dimensional material layer 1 is arranged on the insulating film 3.
  • the conductivity of the two-dimensional material layer 1 due to the optical gate effect is more likely to be modulated than in the case where the region is not provided.
  • the amount of change in the current value I when the electromagnetic wave detector according to the present embodiment is irradiated with an electromagnetic wave is the current generated by the resistance change of the two-dimensional material layer 1 due to the dielectric polarization generated in the strong dielectric layer 5.
  • the photoelectric flow rate generated by the photoelectric conversion in the two-dimensional material layer 1 is included. That is, in the electromagnetic wave detector according to the present embodiment, in addition to the current generated by the above-mentioned optical gate effect due to the incident of the electromagnetic wave and the current due to the change in the energy barrier, the original photoelectric conversion efficiency of the two-dimensional material layer 1 is obtained. The resulting photocurrent can also be detected.
  • the electromagnetic wave detector according to the present embodiment can achieve both a favorable sensitivity with a quantum efficiency of 100% or more and an OFF operation.
  • the electromagnetic wave detector when silicon is used for the semiconductor layer 4, it is possible to form a read circuit in the semiconductor layer 4. This makes it possible to read the signal without having to form a circuit outside the element.
  • FIG. 4 is a schematic plan view of the electromagnetic wave detector according to the second embodiment.
  • FIG. 5 is a schematic cross-sectional view of the line segment VV of FIG.
  • FIG. 6 is a schematic cross-sectional view showing a first modification of the electromagnetic wave detector according to the second embodiment.
  • FIG. 7 is a schematic cross-sectional view showing a second modification of the electromagnetic wave detector according to the second embodiment. It should be noted that FIGS. 5 to 7 all correspond to FIG.
  • the electromagnetic wave detector shown in FIG. 4 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and the same effect can be obtained, but the arrangement of the ferroelectric layer 5 is arranged. It is different from the electromagnetic wave detector shown in FIGS. 1 and 2. That is, in the electromagnetic wave detector shown in FIG. 4, the ferroelectric layer 5 is arranged below the two-dimensional material layer 1 or the insulating film 3. In FIG. 5, the ferroelectric layer 5 is formed on the lower part of the two-dimensional material layer 1 and the upper part of the semiconductor layer 4.
  • the first modification of the electromagnetic wave detector according to the second embodiment shown in FIG. 6 basically has the same configuration as the electromagnetic wave detector shown in FIG. 5, but the arrangement of the ferroelectric layer 5 is shown in the figure. It is different from the electromagnetic wave detector shown in 5. That is, in the electromagnetic wave detector shown in FIG. 6, the ferroelectric layer 5 is formed on the lower part of the two-dimensional material layer 1, the insulating film 3 and the upper part of the semiconductor layer 4.
  • the second modification of the electromagnetic wave detector according to the second embodiment shown in FIG. 7 basically has the same configuration as the electromagnetic wave detector shown in FIG. 5, but the arrangement of the ferroelectric layer 5 is shown in the figure. It is different from the electromagnetic wave detector shown in 5. That is, in the electromagnetic wave detector shown in FIG. 7, the ferroelectric layer 5 is formed on the lower portion of the insulating film 3 and the upper portion of the semiconductor layer 4. In the lower part of the insulating film 3, the ferroelectric layer 5 is in contact with the two-dimensional material layer 1. Here, the ferroelectric layer 5 may undergo a change in polarization in the horizontal direction with respect to the bonding interface between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the energy barriers of the two-dimensional material layer 1 and the semiconductor layer 4 can be changed by electromagnetic wave irradiation. Further, the polarization change may occur perpendicular to the bonding interface between the insulating film 3 and the two-dimensional material layer 1. In this case, the conductivity of the two-dimensional material layer 1 changes, and an optical gate effect can be produced. Further, the polarization may be changed in each direction. At this time, when the ferroelectric layer 5 and the two-dimensional material layer 1 are not in contact with each other, the same effect as that of the fifth embodiment is obtained.
  • the ferroelectric layer 5 is arranged under the two-dimensional material layer 1 or under the insulating film 3.
  • the strong dielectric layer 5 is arranged at the lower part of the two-dimensional material layer 1 or the lower part of the insulating film 3, so that the two-dimensional material layer 1 eliminates process damage in the film formation of the strong dielectric layer 5. This makes it possible to prevent the performance of the two-dimensional material layer 1 from deteriorating, so that the sensitivity of the electromagnetic wave detector can be increased.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • FIG. 8 is a schematic plan view of the electromagnetic wave detector according to the third embodiment.
  • FIG. 9 is a schematic cross-sectional view of the line segment IX-IX of FIG.
  • the electromagnetic wave detector shown in FIG. 8 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but the two-dimensional material layer 1, the first. It differs from the electromagnetic wave detectors shown in FIGS. 1 and 2 in that the electrode portion 2a, the second electrode portion 2b, and the semiconductor layer 4 are arranged on the ferroelectric layer 5. That is, the semiconductor layer 4 and the first electrode portion 2a are provided on a part of the ferroelectric layer 5, the second electrode portion 2b is provided on the semiconductor layer 4, and the two-dimensional material layer 1 is the first electrode portion 2a. It is characterized in that it extends from above to the semiconductor layer 4 via the ferroelectric layer 5.
  • the ferroelectric layer 5 can be configured as a ferroelectric crystal substrate.
  • Such a ferroelectric layer 5 has higher crystallinity and can be made thicker than the ferroelectric layer 5 which is not configured as a ferroelectric crystal substrate. Since the rate of change in polarization caused by electromagnetic wave irradiation in such a ferroelectric layer 5 is higher than that of the ferroelectric layer 5 not configured as a ferroelectric crystal substrate, the sensitivity of the electromagnetic wave detector is improved. Further, in the electromagnetic wave detector according to the first embodiment, when the ferroelectric layer 5 is formed on the two-dimensional material layer 1, the two-dimensional material layer 1 may be subject to process damage.
  • the electromagnetic wave detector according to the third embodiment since the two-dimensional material layer 1 is not damaged by the process, it is possible to prevent the performance of the two-dimensional material layer 1 from deteriorating, so that the electromagnetic wave detector is highly sensitive. Can be transformed into.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • FIG. 10 is a schematic plan view of the electromagnetic wave detector according to the fourth embodiment.
  • FIG. 11 is a schematic cross-sectional view of the line segment XI-XI of FIG.
  • FIG. 12 is a schematic plan view showing a first modification of the electromagnetic wave detector according to the fourth embodiment.
  • FIG. 13 is a schematic cross-sectional view of the line segment XIII-XIII of FIG.
  • FIG. 14 is a schematic plan view showing a second modification of the electromagnetic wave detector according to the fourth embodiment.
  • FIG. 15 is a schematic cross-sectional view of the line segment XV-XV of FIG.
  • the electromagnetic wave detector shown in FIG. 10 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and the same effect can be obtained, but the arrangement of the ferroelectric layer 5 is arranged. It is different from the electromagnetic wave detector shown in FIGS. 1 and 2. That is, in the electromagnetic wave detector shown in FIG. 10, the ferroelectric layer 5 is arranged only on the upper part of the joint surface between the two-dimensional material layer 1 and the semiconductor layer 4. In other words, the ferroelectric layer 5 is arranged so as to overlap only the first portion of the two-dimensional material layer 1 and is in contact with only the first portion.
  • the ferroelectric layer 5 is arranged only on the upper part of the two-dimensional material layer 1 on the insulating film 3. In other words, the ferroelectric layer 5 is arranged so as to overlap only the second portion and the third portion of the two-dimensional material layer 1, and is in contact with only the second portion and the third portion. There is.
  • the ferroelectric layer 5 is arranged in a part of the two-dimensional material layer 1.
  • the ferroelectric layer 5 is arranged so as to overlap only the third portion of the two-dimensional material layer 1, and is in contact with only the third portion.
  • the ferroelectric layer 5 is arranged above the joint surface between the two-dimensional material layer 1 and the semiconductor layer 4. In this case, when an electromagnetic wave is incident on the ferroelectric layer 5, the energy barriers of the two-dimensional material layer 1 and the semiconductor layer 4 can be changed by the polarization change of the ferroelectric layer 5, and the electromagnetic wave detector is made highly sensitive. can do.
  • the ferroelectric layer 5 is arranged on the upper part of the two-dimensional material layer 1 on the insulating film 3.
  • the conductivity of the two-dimensional material layer 1 is modulated by the polarization change of the ferroelectric layer 5, and the electromagnetic wave detector can be made highly sensitive.
  • the ferroelectric layer 5 is arranged in a part of the two-dimensional material layer 1.
  • the conductivity is modulated in the vicinity of the region where the ferroelectric layer 5 is in contact. This makes it possible to modulate the conductivity in any region of the two-dimensional material layer 1.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • FIG. 16 is a schematic cross-sectional view of the electromagnetic wave detector according to the fifth embodiment.
  • FIG. 16 corresponds to FIG.
  • FIG. 17 is a schematic plan view showing a first modification of the electromagnetic wave detector according to the fifth embodiment.
  • FIG. 18 is a schematic cross-sectional view of the line segment XVIII-XVIII of FIG.
  • the electromagnetic wave detector shown in FIG. 16 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but has a ferroelectric layer 5 and two dimensions. It differs from the electromagnetic wave detectors shown in FIGS. 1 and 2 in that it includes an insulating film 3b that separates the material layers 1. The ferroelectric layer 5 does not come into direct contact with the two-dimensional material layer 1.
  • the electromagnetic wave detectors shown in FIGS. 17 and 18 basically have the same configuration as the electromagnetic wave detectors shown in FIGS. 8 and 9, and can obtain the same effect, but the ferroelectric layer 5 It differs from the electromagnetic wave detector shown in FIGS. 8 and 9 in that it is provided with an insulating film 3b that separates the two-dimensional material layer 1 from the electromagnetic wave detector.
  • the electromagnetic wave detectors shown in FIGS. 17 and 18 basically have the same configuration as the electromagnetic wave detector shown in FIG. 16 and can obtain the same effect, but the two-dimensional material layer 1 ,
  • the first electrode portion 2a, the second electrode portion 2b, the semiconductor layer 4, and the insulating film 3b are arranged on the ferroelectric layer 5, which is different from the electromagnetic wave detector shown in FIG.
  • the thickness of the insulating film 3b is preferably a thickness that can be applied to the two-dimensional material layer 1 without shielding the electric field change due to the pyroelectric effect of the ferroelectric layer 5.
  • the insulating film 3b is arranged between the ferroelectric layer 5 and the two-dimensional material layer 1.
  • the ferroelectric layer 5 does not come into direct contact with the two-dimensional material layer 1.
  • the electric charge is exchanged between the spontaneous polarization of the ferroelectric layer 5 and the two-dimensional material layer 1, so that the optical response becomes small.
  • the ferroelectric layer 5 and the two-dimensional material layer 1 come into contact with each other, hysteresis may occur and the response speed of the electromagnetic wave detector may decrease.
  • these effects can be suppressed. Further, even when the insulating film 3b is inserted, the electric field change due to the pyroelectric effect of the ferroelectric layer 5 can be given to the two-dimensional material layer 1.
  • the polarization change can be increased by applying heat energy to the strong dielectric layer 5 due to the heat generation of the insulating film 3b, and the electromagnetic wave detector is made high. It can be made sensitive.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • Embodiment 6 ⁇ Configuration of electromagnetic wave detector>
  • the position of the end portion of the two-dimensional material layer 1 in a plan view is not particularly limited, but in the electromagnetic wave detector according to the present embodiment, the two-dimensional material is used.
  • the first portion of layer 1 has an end of the two-dimensional material layer 1 in plan view.
  • the electromagnetic wave detector according to the present embodiment basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but is at the end of the two-dimensional material layer 1.
  • the unit is arranged on the semiconductor layer 4.
  • the end portion of the two-dimensional material layer 1 in a plan view is arranged in the opening portion of the insulating film 3.
  • the end portion of the two-dimensional material layer 1 is, for example, an end portion in the longitudinal direction of the two-dimensional material layer 1.
  • the shape of the end portion of the two-dimensional material layer 1 in a plan view is, for example, a rectangular shape, but may be a triangular shape, a comb shape, or the like.
  • the first portion of the two-dimensional material layer 1 may have a plurality of ends electrically connected to the semiconductor layer 4.
  • the first portion of the two-dimensional material layer 1 may have only a part of the end portion of the two-dimensional material layer 1 in a plan view.
  • the end portion of the two-dimensional material layer 1 in a plan view may have a portion arranged in the opening of the insulating film 3 and a portion arranged on the insulating film 3.
  • the end portion of the two-dimensional material layer 1 may be a graphene nanoribbon.
  • the graphene nanoribbon has a band gap, a Schottky junction is formed in the junction region between the graphene nanoribbon and the semiconductor portion, so that the dark current can be reduced and the sensitivity of the electromagnetic wave detector can be improved.
  • the end portion of the two-dimensional material layer 1 exists on the semiconductor layer 4.
  • the junction region between the two-dimensional material layer 1 and the semiconductor portion is a Schottky junction.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • FIG. 19 is a schematic cross-sectional view of the electromagnetic wave detector according to the seventh embodiment.
  • FIG. 19 corresponds to FIG.
  • the electromagnetic wave detector shown in FIG. 19 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but the semiconductor layer 4 and the two-dimensional material layer can be obtained.
  • the configuration of the connection portion with 1 is different from that of the electromagnetic wave detector shown in FIGS. 1 and 2. That is, the electromagnetic wave detector shown in FIG. 19 further includes a tunnel insulating layer 6 arranged between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the tunnel insulating layer 6 is arranged inside the opening of the insulating film 3.
  • the thickness of the tunnel insulating layer 6 is set so that a tunnel current is generated between the two-dimensional material layer 1 and the semiconductor layer 4 when the electromagnetic wave to be detected is incident on the two-dimensional material layer 1 and the ferroelectric layer 5. It is set.
  • the thickness of the tunnel insulating layer 6 is, for example, 1 nm or more and 10 nm or less.
  • the material constituting the tunnel insulating layer 6 may be any material having an electrically insulating property, and for example, a metal oxide such as alumina and hafnium oxide, or an oxide containing a semiconductor such as silicon oxide and silicon nitride.
  • the tunnel insulating layer 6 may be manufactured by using an ALD (Atomic Layer Deposition) method, a vacuum vapor deposition method, a sputtering method, or the like.
  • the tunnel insulating layer 6 may be formed by oxidizing or nitriding the surface of the semiconductor layer 4.
  • a natural oxide film formed on the surface of the semiconductor layer 4 may be used as the tunnel insulating layer 6.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • the electromagnetic wave detector includes a tunnel insulating layer 6.
  • the tunnel insulating layer 6 is arranged between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the tunnel insulating layer 6 has a thickness capable of forming a tunnel current between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the thickness of the tunnel insulating layer 6 is set to such a thickness that tunnel injection occurs from the semiconductor layer 4 to the two-dimensional material layer 1, so that the injection efficiency is improved and a large photocurrent is generated in the two-dimensional material layer 1. It is injected and can improve the sensitivity of the electromagnetic wave detector. Further, the dark current can be reduced by suppressing the leakage current at the junction interface between the semiconductor layer 4 and the two-dimensional material layer 1 by the tunnel insulating layer 6.
  • FIG. 20 is a schematic cross-sectional view of the electromagnetic wave detector according to the eighth embodiment. Note that FIG. 20 corresponds to FIG.
  • the electromagnetic wave detector shown in FIG. 20 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and the same effect can be obtained, but the configuration of the ferroelectric layer 5 is It is different from the electromagnetic wave detector shown in FIGS. 1 and 2. That is, the electromagnetic wave detector shown in FIG. 20 is in contact with the ferroelectric layer 5, and the third electrode portion is arranged on the side opposite to the two-dimensional material layer 1 with respect to the ferroelectric layer 5. 2c is further provided. The third electrode portion 2c is arranged on the upper part of the ferroelectric layer 5. The third electrode portion 2c is electrically connected to the surface of the ferroelectric layer 5, and a voltage V is applied between the third electrode portion 2c and the first electrode portion 2a or the second electrode portion 2b.
  • the third electrode portion 2c exhibits a high transmittance at the wavelength of the electromagnetic wave detected by the electromagnetic wave detector.
  • the third electrode portion 2c is arranged on the opposite side to the two-dimensional material layer 1, but it is sufficient as long as it is in contact with the ferroelectric layer 5, and it can be applied to other configurations.
  • the direction in which the voltage is applied from the third electrode portion 2c is preferably the direction perpendicular to the extending direction of the two-dimensional material layer 1.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • the electromagnetic wave detector includes a third electrode portion 2c.
  • the third electrode portion 2c is electrically connected to the ferroelectric layer 5.
  • the same voltage as that of the first electrode portion 2a is applied, but another voltage may be applied.
  • the sensitivity of the detector is improved.
  • FIG. 21 is a schematic cross-sectional view of the electromagnetic wave detector according to the ninth embodiment. Note that FIG. 21 corresponds to FIG.
  • the electromagnetic wave detector shown in FIG. 21 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but the two-dimensional material layer 1 and the semiconductor layer can be obtained.
  • the configuration of the connection portion with 4 is different from the electromagnetic wave detectors shown in FIGS. 1 and 2. That is, the electromagnetic wave detector shown in FIG. 21 further includes a connecting conductor portion 2d that electrically connects the two-dimensional material layer 1 and the semiconductor layer 4.
  • the connecting conductor portion 2d is arranged inside the opening of the insulating film 3.
  • the connecting conductor portion 2d is arranged so as to overlap each of the two-dimensional material layer 1 and the semiconductor layer 4, and is in contact with each of the two-dimensional material layer 1 and the semiconductor layer 4.
  • the lower surface of the connecting conductor portion 2d is in contact with the upper surface of the semiconductor layer 4.
  • the upper surface of the connecting conductor portion 2d is in contact with the lower surface of the two-dimensional material layer 1.
  • the position of the upper surface of the connecting conductor portion 2d is substantially the same as the position of the upper surface of the insulating film 3.
  • the thickness of the connecting conductor portion 2d is equal to the thickness of the insulating film 3.
  • the two-dimensional material layer 1 extends from the upper surface of the insulating film 3 to the upper surface of the connecting conductor portion 2d in a planar shape without bending.
  • the connecting conductor portion 2d exhibits a high transmittance at the wavelength of the electromagnetic wave detected by the electromagnetic wave detector.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • the electromagnetic wave detector includes a connecting conductor portion 2d.
  • the connecting conductor portion 2d electrically connects the semiconductor layer 4 and the two-dimensional material layer 1.
  • the connecting conductor portion 2d can be reduced.
  • the connecting conductor portion 2d and the semiconductor layer 4 form a Schottky junction, and the dark current can be reduced.
  • the thickness of the connecting conductor portion 2d and the thickness of the insulating film 3 are substantially the same, that is, the position of the upper surface of the connecting conductor portion 2d is substantially the same as the position of the upper surface of the insulating film 3. Is preferable.
  • the two-dimensional material layer 1 is formed horizontally without bending, the mobility of carriers in the two-dimensional material layer 1 is improved. Since the optical gate effect is proportional to the mobility, the sensitivity of the electromagnetic wave detector is improved.
  • FIG. 22 is a schematic plan view of the electromagnetic wave detector according to the tenth embodiment.
  • FIG. 23 is a schematic cross-sectional view of the line segment XXIII-XXIII of FIG. 22.
  • FIG. 24 is a schematic cross-sectional view of the line segment XXIV-XXIV of FIG. 22.
  • FIG. 25 is a schematic plan view showing a first modification of the electromagnetic wave detector according to the tenth embodiment.
  • FIG. 26 is a schematic cross-sectional view of the line segment XXVI-XXVI of FIG.
  • FIG. 27 is a schematic plan view showing a second modification of the electromagnetic wave detector according to the tenth embodiment.
  • FIG. 28 is a schematic cross-sectional view of the line segment XXVIII-XXVIII of FIG. 27.
  • the electromagnetic wave detector shown in FIG. 22 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and the same effect can be obtained, but the two-dimensional material layer 1 and the insulating film are obtained.
  • the configuration of 3 is different from the electromagnetic wave detectors shown in FIGS. 1 and 2. That is, the electromagnetic wave detector shown in FIG. 22 is different from the electromagnetic wave detectors shown in FIGS. 1 and 2 in that a plurality of connecting portions between the two-dimensional material layer 1 and the semiconductor layer 4 are provided.
  • a plurality of openings are formed as openings in the insulating film 3.
  • the two-dimensional material layer 1 extends to the inside of each of the plurality of openings and is electrically connected to the semiconductor layer 4 inside each of the plurality of openings.
  • the insulating film 3 is formed with a first opening, a second opening, and a third opening as a plurality of openings.
  • the first opening, the second opening, and the third opening are arranged so as to be spaced apart from each other.
  • the first opening, the second opening, and the third opening each penetrate the insulating film 3, and the surface of the semiconductor layer 4 is exposed at the bottom.
  • the two-dimensional material layer 1 extends from the upper surface of the insulating film 3 to the inside of the first opening, the second opening, and the third opening.
  • the two-dimensional material layer 1 is in contact with the semiconductor layer 4 at the bottoms of the first opening, the second opening, and the third opening.
  • the insulating film 3 is provided with a plurality of openings to increase the contact region between the two-dimensional material layer 1 and the semiconductor layer 4, thereby dispersing the current flowing from the semiconductor layer 4 to the two-dimensional material layer 1. be able to. Therefore, the region where the two-dimensional material layer 1 is affected by the electric field change can be expanded via the ferroelectric layer 5.
  • the electromagnetic wave detector using the present embodiment is used as one pixel.
  • the electromagnetic wave detector shown in FIG. 22 is a pixel having a quadrangular planar shape.
  • the first electrode portion 2a is used. It is preferable to make the area of the above as small as possible. Therefore, as shown in FIGS. 22 and 23, the first electrode portion 2a is arranged at one of the four corners of the pixel. Then, as shown in FIGS.
  • the first opening, the second opening, and the third opening of the insulating film 3 are arranged in the other three corners. By doing so, it is possible to increase the contact area between the two-dimensional material layer 1 and the ferroelectric layer 5 while minimizing the attenuation of the electromagnetic wave by the first electrode portion 2a. As a result, in the two-dimensional material layer 1, the region affected by the electric field change from the ferroelectric layer 5 can be widened, and the sensitivity of the electromagnetic wave detector can be increased.
  • the area of the opening of the first electrode portion 2a and the insulating film 3 is preferably as small as possible.
  • connection portions with the semiconductor layer 4 are provided, but as shown in FIGS. 27 and 28, a plurality of connection portions between the two-dimensional material layer 1 and the first electrode portion 2a are provided. May be good.
  • Each of the plurality of first electrode portions 2a is arranged, for example, in two or more corners of the four corners of the pixel. In addition, each of the plurality of first electrode portions 2a may be arranged at another position as long as it is on the insulating film 3.
  • connection portions between the two-dimensional material layer 1 and the semiconductor layer 4 and a connection portion between the two-dimensional material layer 1 and the first electrode portion 2a may be provided. For example, even if the connection portion between the two-dimensional material layer 1 and the semiconductor layer 4 and the connection portion between the two-dimensional material layer 1 and the first electrode portion 2a are arranged at two of the four corners of the pixel. good.
  • the electromagnetic wave detectors shown in FIGS. 25 and 26 basically have the same configuration as the electromagnetic wave detector shown in FIG. 22 and can obtain the same effect, but the first electrode portion 2a and the insulating film can be obtained.
  • the configuration of 3 is different from the electromagnetic wave detector shown in FIG. That is, in the electromagnetic wave detector shown in FIG. 25, the first electrode portion 2a is formed in an annular shape, and the first portion of the two-dimensional material layer 1 is arranged inside the first electrode portion 2a.
  • the first electrode portion 2a is arranged, for example, on the outer peripheral portion of the pixel.
  • the opening of the insulating film 3 is arranged inside the first electrode portion 2a, and is arranged, for example, in the center of the pixel.
  • the first electrode portion 2a is arranged on the upper surface of the insulating film 3 so as to surround the outer periphery of the opening of the insulating film 3.
  • the photocurrent extracted from the semiconductor layer 4 via the two-dimensional material layer 1 is increased as compared with the electromagnetic wave detector shown in FIG. 22, so that the detection sensitivity is high.
  • the width of the first electrode portion 2a is preferably as narrow as possible in order to suppress the attenuation of electromagnetic waves.
  • the two-dimensional material layer 1 may be arranged in a region that partially overlaps with the opening of the insulating film 3 and the first electrode portion 2a and substantially overlaps with the planar shape of the semiconductor layer 4.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • connection portion between the two-dimensional material layer 1 and the semiconductor layer 4 and the connection portion between the two-dimensional material layer 1 and the first electrode portion 2a are provided in multiples.
  • the two-dimensional material layer 1 is provided.
  • the current flowing between the semiconductor layer 4 and the first electrode portion 2a does not flow locally in the two-dimensional material layer 1, but flows in a dispersed manner.
  • the electromagnetic wave detectors shown in FIGS. 22 to 24 and 27 two dimensions are caused due to the change in polarization in the ferroelectric layer 5 as compared with the case where only one connection portion is provided. Since the region in which the current can change is widened in the material layer 1, the detection sensitivity is high.
  • the first electrode portion 2a is formed in an annular shape, and the first portion of the two-dimensional material layer 1 is arranged inside the first electrode portion 2a. .. In this case, it is possible to widen the region affected by the electric field change from the semiconductor layer 4 in the two-dimensional material layer 1 while minimizing the attenuation of the electromagnetic wave by the first electrode portion 2a. As a result, the sensitivity of the electromagnetic wave detector can be increased.
  • FIG. 29 is a schematic cross-sectional view of the electromagnetic wave detector according to the eleventh embodiment.
  • FIG. 30 is a schematic cross-sectional view showing a modified example of the electromagnetic wave detector according to the eleventh embodiment.
  • the electromagnetic wave detector shown in FIG. 29 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and the same effect can be obtained, but the configuration of the semiconductor layer 4 is FIG. 1. And it is different from the electromagnetic wave detector shown in FIG. That is, the electromagnetic wave detector shown in FIG. 29 has the electromagnetic wave detection shown in FIGS. 1 and 2 in that the semiconductor layer 4 includes the semiconductor layer 4a (first semiconductor portion) and the semiconductor layer 4b (second semiconductor portion). It is different from the vessel.
  • the semiconductor layer 4 is composed of, for example, semiconductor layers 4a and 4b.
  • the semiconductor layer 4 may include three or more semiconductor layers.
  • the semiconductor layer 4a is exposed at the opening of the insulating film 3 and is electrically connected to the first electrode portion 2a via the two-dimensional material layer 1.
  • the semiconductor layer 4a is in contact with, for example, the two-dimensional material layer 1 and the insulating film 3.
  • the semiconductor layer 4b is arranged on the side opposite to the two-dimensional material layer 1 with respect to the semiconductor layer 4a, for example, and is electrically connected to the second electrode portion 2b.
  • the semiconductor layer 4a and the semiconductor layer 4b are laminated in FIG. 29, but the present invention is not limited to this.
  • the conductive type of the semiconductor layer 4a is different from the conductive type of the semiconductor layer 4b.
  • the conductive type of the semiconductor layer 4a is n-type
  • the conductive type of the semiconductor layer 4b is p-type.
  • the semiconductor layer 4 constitutes a diode.
  • the semiconductor layer 4 constitutes, for example, a photodiode having a sensitivity different from that of the ferroelectric layer 5.
  • the electromagnetic wave detector shown in FIG. 30 basically has the same configuration as the electromagnetic wave detector shown in FIG. 29 and can obtain the same effect, but the semiconductor layer 4b (second semiconductor portion).
  • the electromagnetic wave detection shown in FIG. 29 is further provided with a fourth electrode portion electrically connected to the semiconductor layer 4a (first semiconductor portion). It is different from the vessel.
  • the two-dimensional material layer 1 is electrically connected to the semiconductor layer 4a and the semiconductor layer 4b.
  • the interface between the semiconductor layer 4a and the semiconductor layer 4b is arranged in the opening of the insulating film 3.
  • the semiconductor layer 4a is in contact with, for example, the two-dimensional material layer 1 and the fourth electrode portion 2bb.
  • the semiconductor layer 4b is in contact with, for example, the two-dimensional material layer 1 and the insulating film 3 in addition to the second electrode portion 2b.
  • a voltage V2 is applied between the second electrode portion 2ba and the fourth electrode portion 2bb.
  • a depletion layer is formed at the interface between the semiconductor layer 4a and the semiconductor layer 4b, so that the interface between the two-dimensional material layer 1 and the semiconductor layer 4a and the semiconductor layer 4b is formed.
  • a depletion layer is formed.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • the semiconductor layer 4 is composed of a semiconductor layer 4a and a semiconductor layer 4b.
  • the dark current can be reduced.
  • a photodiode in which the semiconductor layer 4a and the semiconductor layer 4b have a sensitivity different from that of the ferroelectric layer 5, it is possible to detect a wide band wavelength by the ferroelectric layer 5 and the photodiode. It becomes.
  • FIG. 31 is a schematic cross-sectional view of the electromagnetic wave detector according to the twelfth embodiment.
  • FIG. 32 is a schematic cross-sectional view showing a modified example of the electromagnetic wave detector according to the twelfth embodiment.
  • the electromagnetic wave detector shown in FIG. 31 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and the same effect can be obtained, but the configuration of the ferroelectric layer 5 is It is different from the electromagnetic wave detector shown in FIGS. 1 and 2. That is, in the electromagnetic wave detector shown in FIG. 31, the ferroelectric layer 5 includes the ferroelectric layer 5a (first ferroelectric portion) and the ferroelectric layer 5b (second ferroelectric portion). It is different from the electromagnetic wave detector shown in FIGS. 1 and 2.
  • the material constituting each of the ferroelectric layer 5a and the ferroelectric layer 5b may be any ferroelectric material that causes a polarization change with respect to a change in thermal energy, but is preferably an electromagnetic wave. Absorption wavelengths are different from each other.
  • the ferroelectric layer 5 is composed of, for example, a ferroelectric layer 5a and a ferroelectric layer 5b.
  • the ferroelectric layer 5 may include 3 or more ferroelectric layers.
  • the ferroelectric layer 5a is arranged on the two-dimensional material layer 1 side with respect to the ferroelectric layer 5b, and is in contact with the two-dimensional material layer 1.
  • the ferroelectric layer 5b is in contact with the ferroelectric layer 5a, but is not in contact with the two-dimensional material layer 1.
  • the ferroelectric layer 5a and the ferroelectric layer 5b are laminated in FIG. 31, but are not limited thereto.
  • the electromagnetic wave detector shown in FIG. 32 basically has the same configuration as the electromagnetic wave detector shown in FIG. 31 and can obtain the same effect, but the configuration of the ferroelectric layer 5 is shown in FIG. 31. It is different from the electromagnetic wave detector shown. That is, the electromagnetic wave detector shown in FIG. 32 is different from the electromagnetic wave detector shown in FIG. 31 in that the ferroelectric layer 5a and the ferroelectric layer 5b are in contact with the two-dimensional material layer 1.
  • the ferroelectric layer 5a is arranged so as to overlap the first portion of the two-dimensional material layer 1.
  • the ferroelectric layer 5b is arranged so as to overlap the second portion and the third portion of the two-dimensional material layer 1.
  • the polarizabilities of the materials constituting each of the ferroelectric layer 5a and the ferroelectric layer 5b are different from each other.
  • the polarizabilities of the materials constituting each of the ferroelectric layer 5a and the ferroelectric layer 5b are designed so that the Fermi level in each region of the two-dimensional material layer 1 is optimized.
  • the polarizability of the material constituting the ferroelectric layer 5a is set higher than the polarizability of the material constituting the ferroelectric layer 5b.
  • the ferroelectric layer 5 includes a ferroelectric layer 5a and a ferroelectric layer 5b.
  • the polarizabilities of the materials constituting each of the ferroelectric layer 5a and the ferroelectric layer 5b are different from each other, so that the Fermi level in each region of the two-dimensional material layer 1 is optimum. Can be designed as such. By optimally designing the Fermi level in each region of the two-dimensional material layer 1, the performance of the electromagnetic wave detector can be improved.
  • Embodiment 13 ⁇ Configuration of electromagnetic wave detector>
  • the electromagnetic wave detector according to the present embodiment is different from the electromagnetic wave detectors shown in FIGS. 1 and 2 in that the two-dimensional material layer 1 includes a disordered layer structure portion.
  • the region corresponding to the channel region in the two-dimensional material layer 1 is a disordered layer structure portion.
  • the random layer structure means a region in which a plurality of graphenes are laminated, and the lattices of the laminated graphenes are laminated in an inconsistent state.
  • the entire two-dimensional material layer 1 may have a disordered layer structure, or only a part of the two-dimensional material layer 1 may have a disordered layer structure.
  • any method can be used as a method for producing the disordered layer structure portion.
  • a single-layer graphene produced by a CVD method may be transferred a plurality of times, and a multi-layer graphene may be laminated to form a disordered layer structure portion.
  • graphene may be grown on graphene by a CVD method using ethanol, methane or the like as a carbon source to form a disordered layer structure portion.
  • the graphene produced by the CVD method is polycrystalline, and when the graphene is further transferred onto the graphene multiple times, or when the graphene is laminated on the underlying graphene by the CVD method, the laminated graphenes are deposited with each other. It has a disordered layer structure in which the grid is in an inconsistent state.
  • Graphene with a disordered layer structure is less affected by the interaction between layers and has the same properties as single-layer graphene. Further, the mobility of the two-dimensional material layer 1 is lowered due to the influence of carrier scattering in the underlying insulating film 3. However, graphene having a disordered layer structure is affected by carrier scattering when the graphene is in contact with the insulating film 3, but graphene in the upper layer laminated on the graphene in a disordered layer structure is affected by carrier scattering from the underlying insulating film 3. It becomes difficult to receive. Further, in graphene having a disordered layer structure, the influence of the interaction between the layers is small, so that the conductivity is also improved. From the above, the mobility of carriers can be improved in graphene having a disordered layer structure. As a result, the sensitivity of the electromagnetic wave detector can be improved.
  • graphene having a disordered layer structure may be applied only to the portion of the two-dimensional material layer 1 existing on the insulating film 3.
  • graphene having no disordered layer structure for example, single-layer graphene may be used for the contact region with the semiconductor layer 4 and the contact region with the first electrode portion 2a.
  • the influence of carrier scattering of the insulating film 3 on the two-dimensional material layer 1 can be suppressed without increasing the contact resistance between the first electrode portion 2a and the semiconductor layer 4 and the two-dimensional material layer 1.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • the two-dimensional material layer 1 includes a random layer structure.
  • the mobility of carriers in the two-dimensional material layer 1 can be improved.
  • the sensitivity of the electromagnetic wave detector can be improved.
  • FIG. 33 is a schematic cross-sectional view of the electromagnetic wave detector according to the fourteenth embodiment.
  • the electromagnetic wave detector shown in FIG. 33 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but has a configuration on the two-dimensional material layer 1. Is different from the electromagnetic wave detectors shown in FIGS. 1 and 2. That is, the electromagnetic wave detector shown in FIG. 33 differs from the electromagnetic wave detectors shown in FIGS. 1 and 2 in that at least one or more conductors 7 are formed on the upper surface of the two-dimensional material layer 1. ing. A plurality of conductors 7 are arranged on the upper surface of the two-dimensional material layer 1. The plurality of conductors 7 are arranged at intervals from each other. The conductor 7 is a floating electrode.
  • a specific description will be given.
  • the electromagnetic wave detector according to the present embodiment is provided with a conductor 7 as a floating electrode on the two-dimensional material layer 1.
  • a conductor 7 As the material constituting the conductor 7, any material can be used as long as it is a conductor.
  • the material of the conductor 7 is a metal material such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), or palladium (Pd). Can be used.
  • the conductor 7 is not connected to a power supply circuit or the like and is floating.
  • the conductor 7 is provided on the two-dimensional material layer 1 located between the first electrode portion 2a and the semiconductor layer 4.
  • the plurality of conductors 7 have a one-dimensional or two-dimensional periodic structure.
  • a one-dimensional periodic structure a structure in which a plurality of conductors 7 are arranged at intervals (periodically) from each other in the horizontal direction on the paper surface or the depth direction of the paper surface in FIG. 33 can be adopted.
  • a structure in which the conductors 7 are arranged at positions corresponding to lattice points such as a square lattice or a triangular lattice can be adopted.
  • the planar shape of each conductor 7 may be any shape such as a circular shape, a triangular shape, a quadrangular shape, a polygonal shape, or an elliptical shape.
  • the arrangement of the conductors 7 in the plan view is not limited to the above-mentioned arrangement having periodic symmetry, and may be an arrangement having asymmetry in the plan view.
  • any method may be adopted as the specific method for forming the conductor 7, but for example, the same method as the method for manufacturing the first electrode portion 2a described in the first embodiment may be used. ..
  • the conductor 7 which is a floating electrode is provided on the two-dimensional material layer 1. Therefore, the surface carriers generated by the irradiation of electromagnetic waves in the ferroelectric layer 5 can move back and forth between the plurality of conductors 7, and as a result, the life of the optical carriers is extended. This makes it possible to increase the sensitivity of the electromagnetic wave detector.
  • the electromagnetic wave detector according to the present embodiment can detect only specific polarized light.
  • the plurality of conductors 7 have a specific wavelength. Electromagnetic waves can be resonated. In this case, only the electromagnetic wave having a specific wavelength can be detected by the electromagnetic wave detector. In this case, the electromagnetic wave detector according to the present embodiment can detect only electromagnetic waves having a specific wavelength with high sensitivity.
  • the conductors 7 are subjected to the irradiated electromagnetic wave as in the case where the plurality of conductors 7 have a one-dimensional periodic structure. Polarization dependence occurs in.
  • the semiconductor layer 4 can be irradiated with only a specific polarized electromagnetic wave.
  • the electromagnetic wave detector according to the present embodiment can detect only specific polarized light.
  • the conductor 7 may be arranged under the two-dimensional material layer 1. Even with such a configuration, the same effect as that of the electromagnetic wave detector shown in FIG. 33 can be obtained. Further, in this case, since the two-dimensional material layer 1 is not damaged when the conductor 7 is formed, it is possible to suppress a decrease in carrier mobility in the two-dimensional material layer 1.
  • the uneven portion may be formed on the two-dimensional material layer 1.
  • the uneven portion of the two-dimensional material layer 1 may have a periodic structure or an asymmetric structure as in the case of the plurality of conductors 7 described above. In this case, the same effect as when a plurality of conductors 7 are formed can be obtained.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • the electromagnetic wave detector further includes one or more conductors 7.
  • the one or more conductors 7 are arranged so as to be in contact with the two-dimensional material layer 1. In this case, the life of the optical carrier in the two-dimensional material layer 1 is extended. As a result, the sensitivity of the electromagnetic wave detector can be increased.
  • FIG. 34 is a schematic cross-sectional view of the electromagnetic wave detector according to the fifteenth embodiment.
  • the electromagnetic wave detector shown in FIG. 34 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but has a configuration on the two-dimensional material layer 1. Is different from the electromagnetic wave detectors shown in FIGS. 1 and 2. That is, the electromagnetic wave detector shown in FIG. 34 differs from the electromagnetic wave detectors shown in FIGS. 1 and 2 in that at least one or more contact layers 8 are formed on the upper surface of the two-dimensional material layer 1. ing.
  • a specific description will be given.
  • the contact layer 8 is provided on the two-dimensional material layer 1.
  • the contact layer 8 is made of a material capable of supplying holes or electrons to the two-dimensional material layer 1 by coming into contact with the two-dimensional material layer 1.
  • the contact layer 8 allows the two-dimensional material layer 1 to be optionally doped with holes or electrons.
  • a composition called a positive photoresist which contains a photosensitive agent having a quinonediagit group and a novolak resin
  • a material having a polar group can be used as the material constituting the contact layer 8.
  • a material having an electron attracting group which is an example of the material, has an effect of reducing the electron density of the two-dimensional material layer 1.
  • a material having an electron donating group which is an example of the material, has an effect of increasing the electron density of the two-dimensional material layer 1.
  • Examples of the material having an electron attracting group include a material having a halogen, a nitrile, a carboxyl group, a carbonyl group and the like.
  • Examples of the material having an electron donating group include a material having an alkyl group, an alcohol, an amino group, a hydroxyl group and the like.
  • a material in which the charge is biased in the entire molecule due to the polar group can also be used as the material for the contact layer 8.
  • the material can be used as a material for the contact layer 8.
  • the contact layer 8 made of an inorganic substance and the two-dimensional material layer 1 are brought into contact with each other, the conductive type to which the two-dimensional material layer 1 is doped has a work function of the contact layer 8 rather than a work function of the two-dimensional material layer 1.
  • the function is large, it is p-type, and when it is small, it is n-type.
  • the contact layer 8 is an organic substance
  • the organic substance which is a material constituting the contact layer 8 does not have a clear work function. Therefore, whether the two-dimensional material layer 1 is an n-type dope or a p-type dope can be determined by the polarity of the organic molecule used in the contact layer 8 to determine the polar group of the material of the contact layer 8. preferable.
  • the contact layer 8 when a composition containing a photosensitive agent having a quinonediagit group and a novolak resin, which is called a positive photoresist, is used as the contact layer 8, the region where the resist is formed by the photolithography step in the two-dimensional material layer 1 is p. It becomes a mold two-dimensional material layer area. This eliminates the need for a mask forming process that comes into contact with the surface of the two-dimensional material layer 1. As a result, it is possible to reduce the process damage to the two-dimensional material layer 1 and simplify the process.
  • a composition containing a photosensitive agent having a quinonediagit group and a novolak resin which is called a positive photoresist
  • the contact layer 8 is formed on the two-dimensional material layer 1.
  • a material having an electron attracting group or a material having an electron donating group as the material of the contact layer 8
  • the state (conductive type) of the two-dimensional material layer 1 is intentionally n. It can be a mold or a p-type.
  • the carrier doping of the two-dimensional material layer 1 can be controlled without considering the influence of the carrier doping from the polarization of the first electrode portion 2a, the semiconductor layer 4 and the ferroelectric layer 5. As a result, the performance of the electromagnetic wave detector can be improved.
  • the contact layer 8 by forming the contact layer 8 only on either the first electrode portion 2a side or the semiconductor layer 4 side on the upper surface of the two-dimensional material layer 1, a gradient of charge density can be created in the two-dimensional material layer 1. It is formed. As a result, the mobility of the carriers in the two-dimensional material layer 1 is improved, and the sensitivity of the electromagnetic wave detector can be increased.
  • a plurality of contact layers 8 may be formed on the two-dimensional material layer 1.
  • the number of the contact layers 8 may be 3 or more, and may be any number.
  • a plurality of contact layers 8 may be formed on the two-dimensional material layer 1 located between the first electrode portion 2a and the semiconductor layer 4. In that case, the materials of the plurality of contact layers 8 may be the same material or different materials.
  • the film thickness of the contact layer 8 is preferably sufficiently thin so that photoelectric conversion can be performed when the electromagnetic wave is applied to the two-dimensional material layer 1.
  • the contact layer 8 may have any configuration as long as carriers such as molecules or electrons are introduced into the two-dimensional material layer 1. For example, by immersing the two-dimensional material layer 1 in a solution and supplying carriers to the two-dimensional material layer 1 at the molecular level, the solid contact layer 8 is not formed on the two-dimensional material layer 1, but the two-dimensional material. Layer 1 may be doped with carriers.
  • a material that causes a polarity conversion may be used in addition to the material described above.
  • the contact layer 8 undergoes a polarity conversion the electrons or holes generated during the conversion are supplied to the two-dimensional material layer 1. Therefore, electron or hole doping occurs in the portion of the two-dimensional material layer 1 in which the contact layer 8 is in contact. Therefore, even if the contact layer 8 is removed, the portion of the two-dimensional material layer 1 that has been in contact with the contact layer 8 remains doped with electrons or holes. Therefore, when a material that causes a polarity conversion is used as the contact layer 8, the contact layer 8 may be removed from the two-dimensional material layer 1 after a certain period of time has elapsed.
  • the opening area of the two-dimensional material layer 1 increases as compared with the case where the contact layer 8 is present. Therefore, the detection sensitivity of the electromagnetic wave detector can be improved.
  • the polarity conversion is a phenomenon in which a polar group is chemically converted, for example, an electron attracting group is changed to an electron donating group, an electron donating group is changed to an electron attracting group, or a polar group. Means a phenomenon in which is changed to a non-polar group, or a non-polar group is changed to a polar group.
  • the contact layer 8 may be formed of a material that undergoes polarity conversion by electromagnetic wave irradiation.
  • the contact layer 8 by selecting a material that causes a polarity conversion at a specific electromagnetic wave wavelength as the material of the contact layer 8, the contact layer 8 causes a polarity conversion only when the contact layer 8 is irradiated with an electromagnetic wave having a specific electromagnetic wave wavelength, and the two-dimensional material layer. Doping to 1 can be performed. As a result, the photocurrent flowing into the two-dimensional material layer 1 can be increased.
  • a material that causes a redox reaction by irradiation with electromagnetic waves may be used as the material of the contact layer 8.
  • the electrons or holes generated during the redox reaction can be doped into the two-dimensional material layer 1.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • the electromagnetic wave detector includes a contact layer 8 that comes into contact with the two-dimensional material layer 1.
  • the contact layer 8 supplies holes or electrons to the two-dimensional material layer 1.
  • the carrier doping of the two-dimensional material layer 1 can be controlled without considering the influence of the carrier doping from the first electrode portion 2a and the semiconductor layer 4. As a result, the performance of the electromagnetic wave detector can be improved.
  • FIG. 35 is a schematic cross-sectional view of the electromagnetic wave detector according to the sixteenth embodiment.
  • FIG. 36 is a schematic cross-sectional view showing a modified example of the electromagnetic wave detector according to the sixteenth embodiment.
  • the electromagnetic wave detector shown in FIG. 35 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but around the two-dimensional material layer 1. It differs from the electromagnetic wave detectors shown in FIGS. 1 and 2 in that the void 9 is formed.
  • a gap 9 is provided between the two-dimensional material layer 1 and the insulating film 3.
  • the two-dimensional material layer 1 has a surface facing the void 9. That is, unlike the electromagnetic wave detector according to the first embodiment, the two-dimensional material layer 1 does not come into contact with the insulating film 3. At this time, it is preferable that the upper surface of the semiconductor layer 4 at the opening has the same height as the upper surface of the first electrode portion 2a.
  • the two-dimensional material layer 1 extends from the first electrode portion 2a to the semiconductor layer 4.
  • the void 9 located below the two-dimensional material layer 1 is located between the first electrode portion 2a and the opening. If the void 9 is provided between the insulating film 3 and the two-dimensional material layer 1, another configuration may be adopted.
  • the electromagnetic wave detector shown in FIG. 36 basically has the same configuration as the electromagnetic wave detector shown in FIG. 35 and can obtain the same effect, but the structure of the two-dimensional material layer 1 is shown in FIG. 35. It is different from the electromagnetic wave detector shown. That is, in the electromagnetic wave detector shown in FIG. 36, a void 9 is formed between the two-dimensional material layer 1 and the ferroelectric layer 5.
  • a gap 9 is provided between the two-dimensional material layer 1 and the ferroelectric layer 5. That is, unlike the electromagnetic wave detector according to the first embodiment, the two-dimensional material layer 1 is not in contact with the ferroelectric layer 5.
  • the polarization change of the ferroelectric layer 5 caused by electromagnetic wave irradiation causes an electric field change in the two-dimensional material layer 1 via the first electrode portion 2a or the semiconductor layer 4. At this time, the polarization direction of the ferroelectric layer 5 may be parallel to the plane of the two-dimensional material layer 1. Further, the electric field may be changed through the void 9. At this time, the polarization direction of the ferroelectric layer 5 may be perpendicular to the plane of the two-dimensional material layer 1.
  • the upper surface of the semiconductor layer 4 has the same height as the upper surface of the first electrode portion 2a.
  • the two-dimensional material layer 1 extends from the first electrode portion 2a to the semiconductor layer 4.
  • the void 9 located below the two-dimensional material layer 1 is located between the first electrode portion 2a and the semiconductor layer 4. If the void 9 is provided between the two-dimensional material layer 1 and the ferroelectric layer 5, another configuration may be adopted.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • the void 9 is formed in at least one of the upper part and the lower part of the two-dimensional material layer 1.
  • the influence of carrier scattering due to contact between the insulating film 3 or the ferroelectric layer 5 and the two-dimensional material layer 1 can be eliminated.
  • the sensitivity of the electromagnetic wave detector can be improved.
  • the optical gate effect can act even if a void 9 is formed in the lower part of the two-dimensional material layer 1.
  • FIG. 37 is a schematic cross-sectional view of the electromagnetic wave detector according to the seventeenth embodiment.
  • the electromagnetic wave detector shown in FIG. 37 basically has the same configuration as the electromagnetic wave detectors shown in FIGS. 1 and 2, and can obtain the same effect, but has the two-dimensional material layer 1 and the ferroelectric substance.
  • FIG. 1 further includes a connecting conductor portion 2e that electrically connects to and from the body layer 5, and the ferroelectric layer 5 is connected to the two-dimensional material layer 1 via the connecting conductor portion 2e. And it is different from the electromagnetic wave detector shown in FIG.
  • the ferroelectric layer 5 is provided so that the polarization change of the ferroelectric layer 5 caused by electromagnetic wave irradiation occurs in a direction perpendicular to the bonding interface between the two-dimensional material layer 1 and the connecting conductor portion 2e. .. In this case, the electric charge generated in the ferroelectric layer 5 due to the change in polarization is injected into the two-dimensional material layer 1 via the connecting conductor portion 2e.
  • the connecting conductor portion 2e and the ferroelectric layer 5 shown in FIG. 37 are arranged on the upper part of the two-dimensional material layer 1.
  • the connecting conductor portion 2e and the ferroelectric layer 5 may be arranged below the two-dimensional material layer 1.
  • the connecting conductor portion 2e is arranged, for example, on the upper portion of the ferroelectric layer 5.
  • the ferroelectric layer 5 is provided so that the polarization change of the ferroelectric layer 5 caused by electromagnetic wave irradiation occurs in a direction perpendicular to the first surface of the semiconductor layer 4.
  • the connecting conductor portion 2e and the ferroelectric layer 5 may be arranged side by side with the two-dimensional material layer 1 along the first surface and in a direction orthogonal to the extending direction of the two-dimensional material layer 1. ..
  • the ferroelectric layer 5 is provided so that the polarization change of the ferroelectric layer 5 caused by electromagnetic wave irradiation occurs in the direction along the two-dimensional plane of the two-dimensional material layer 1.
  • the ferroelectric layer 5 is provided so that the polarization change of the ferroelectric layer 5 caused by electromagnetic wave irradiation occurs in the direction along the first surface of the semiconductor layer 4.
  • the surface resistance of the two-dimensional material layer 1 and the ferroelectric layer 5 is high. Therefore, when the ferroelectric layer 5 is connected to the two-dimensional material layer 1 without passing through the connecting conductor portion 2e, the electric charge generated by the polarization change in the ferroelectric layer 5 is transferred to the two-dimensional material layer 1. Not injected.
  • the ferroelectric layer 5 is connected to the two-dimensional material layer 1 via the connecting conductor portion 2e. Therefore, the electric charge generated by the polarization change accompanying the electromagnetic wave irradiation in the ferroelectric layer 5 can be injected into the two-dimensional material layer 1 via the connecting conductor portion 2e.
  • the two-dimensional material layer is compared with the electromagnetic wave detector in which the ferroelectric layer 5 is connected to the two-dimensional material layer 1 without passing through the connecting conductor portion 2e.
  • the conductivity of 1 can be efficiently modulated.
  • the connecting conductor portion 2e and the ferroelectric layer 5 are arranged on the upper part of the two-dimensional material layer 1, the connecting conductor portion 2e and the ferroelectric layer 5 are formed in the method of manufacturing the electromagnetic wave detector.
  • the step of forming the two-dimensional material layer 1 is performed after the step of forming the two-dimensional material layer 1. Therefore, the two-dimensional material layer 1 may be damaged by the process of forming the connecting conductor portion 2e and the ferroelectric layer 5.
  • the connecting conductor portion 2e and the ferroelectric layer 5 are arranged below the two-dimensional material layer 1, in the method of manufacturing the electromagnetic wave detector, the connecting conductor portion 2e and the ferroelectric layer 5 are arranged.
  • the step of forming the two-dimensional material layer 1 is performed before the step of forming the two-dimensional material layer 1. Therefore, the two-dimensional material layer 1 is not likely to be damaged by the process of forming the connecting conductor portion 2e and the ferroelectric layer 5. As a result, it is possible to prevent the performance of the two-dimensional material layer 1 from deteriorating due to the process damage, and further to prevent the detection sensitivity of the electromagnetic wave detector from deteriorating.
  • the ferroelectric layer 5 is preferably provided so that the polarization change of the ferroelectric layer 5 caused by irradiation with electromagnetic waves occurs in the direction along the two-dimensional plane of the two-dimensional material layer 1.
  • the electrical resistance in the direction along the two-dimensional plane of the two-dimensional material layer 1 is lower than the electrical resistance in the direction perpendicular to the two-dimensional plane of the two-dimensional material layer 1.
  • the polarization change of the strong dielectric layer 5 is provided so as to occur in the direction along the two-dimensional plane of the two-dimensional material layer 1
  • the polarization change of the strong dielectric layer 5 is provided so as to occur in the direction along the two-dimensional plane of the two-dimensional material layer 1.
  • the electric charge generated by the polarization change due to the electromagnetic wave irradiation in the dielectric layer 5 is transferred to the two-dimensional material via the connecting conductor portion 2e. It can be efficiently injected into layer 1.
  • the configuration of the electromagnetic wave detector according to the present embodiment can be applied to other embodiments.
  • FIG. 38 is a schematic plan view of the electromagnetic wave detector according to the eighteenth embodiment.
  • FIG. 39 is a schematic cross-sectional view showing a modified example of the electromagnetic wave detector according to the eighteenth embodiment.
  • the electromagnetic wave detector shown in FIG. 38 is an aggregate of electromagnetic wave detectors, and has a plurality of electromagnetic wave detectors 100 according to any one of the first to twelfth embodiments as detection elements.
  • the electromagnetic wave detector according to the first embodiment may be used as the electromagnetic wave detector 100.
  • the electromagnetic wave detectors 100 are arranged in an array in the two-dimensional direction.
  • the plurality of electromagnetic wave detectors 100 may be arranged so as to be arranged in one-dimensional direction.
  • the electromagnetic wave detector 100 is arranged in a 2 ⁇ 2 array.
  • the number of electromagnetic wave detectors 100 to be arranged is not limited to this.
  • a plurality of electromagnetic wave detectors 100 may be arranged in an array of 3 or more ⁇ 3 or more.
  • a plurality of electromagnetic wave detectors 100 are arranged periodically in two dimensions, but a plurality of electromagnetic wave detectors 100 may be arranged periodically along a certain direction. Further, the arrangement of the plurality of electromagnetic wave detectors 100 is not periodic, and may be arranged at different intervals.
  • the second electrode portion 2b may be a common electrode as long as each electromagnetic wave detector 100 can be separated.
  • the second electrode portion 2b as a common electrode, it is possible to reduce the wiring of pixels in each electromagnetic wave detector 100 as compared with the configuration in which the second electrode portion 2b is independent. As a result, it becomes possible to increase the resolution of the electromagnetic wave detector aggregate.
  • the electromagnetic wave detector aggregate using the plurality of electromagnetic wave detectors 100 in this way can also be used as an image sensor by arranging the plurality of electromagnetic wave detectors 100 in an array.
  • an electromagnetic wave detector aggregate having a plurality of electromagnetic wave detectors 100 according to the first embodiment has been described as an example, but instead of the electromagnetic wave detector according to the first embodiment, another embodiment has been described.
  • the electromagnetic wave detector according to the above embodiment may be used.
  • the electromagnetic wave detector shown in FIG. 39 is an aggregate of electromagnetic wave detectors, and basically has the same configuration as the electromagnetic wave detector shown in FIG. 38 and can obtain the same effect, but a plurality of electromagnetic wave detectors can be obtained. It differs from the electromagnetic wave detector shown in FIG. 38 in that different types of electromagnetic wave detectors 200, 201, 202, and 203 are used as the electromagnetic wave detectors. That is, in the electromagnetic wave detector shown in FIG. 39, different types of electromagnetic wave detectors 200, 201, 202, and 203 are arranged in an array (matrix).
  • the electromagnetic wave detectors 200, 201, 202, and 203 are arranged in a 2 ⁇ 2 matrix, but the number of arranged electromagnetic wave detectors is not limited to this. Further, in the present embodiment, different types of electromagnetic wave detectors 200, 201, 202, and 203 are arranged periodically in two dimensions, but they may be arranged periodically in one dimension. Further, different types of electromagnetic wave detectors 200, 201, 202, and 203 may be arranged at different intervals instead of periodically.
  • electromagnetic wave detector assembly shown in FIG. 39
  • different types of electromagnetic wave detectors 200, 201, 202, and 203 according to any one of the first to 16th embodiments are arranged in a one-dimensional or two-dimensional array. Therefore, it is possible to have a function as an image sensor.
  • electromagnetic wave detectors 200, 201, 202, and 203 electromagnetic wave detectors having different detection wavelengths may be used.
  • electromagnetic wave detectors having different detection wavelength selectivity may be prepared from the electromagnetic wave detectors according to any one of the first to 16th embodiments and arranged in an array. In this case, the electromagnetic wave detector aggregate can detect at least two or more electromagnetic waves having different wavelengths.
  • the electromagnetic wave detectors 200, 201, 202, and 203 having different detection wavelengths in an array for example, ultraviolet light, infrared light, terahertz wave, and radio wave are arranged in the same manner as the image sensor used in the visible light region.
  • the wavelength of the electromagnetic wave can be identified in any wavelength range such as the wavelength range of. As a result, it is possible to obtain a colorized image showing, for example, a difference in wavelength as a difference in color.
  • the constituent material of the semiconductor layer 4 and the ferroelectric layer 5 constituting the electromagnetic wave detector materials having different detection wavelengths may be used.
  • a semiconductor material whose detection wavelength is the wavelength of visible light and a semiconductor material whose detection wavelength is the wavelength of infrared rays may be used as the constituent materials.
  • the electromagnetic wave detector when the electromagnetic wave detector is applied to an in-vehicle sensor, the electromagnetic wave detector can be used as a camera for visible light images in the daytime. Furthermore, the electromagnetic wave detector can also be used as an infrared camera at night. By doing so, it is not necessary to properly use a camera having an image sensor depending on the detection wavelength of the electromagnetic wave.
  • the electromagnetic wave detector can be used as a position detection sensor capable of detecting the position of an object even with a small number of pixels.
  • the electromagnetic wave detectors 200, 201, 202, and 203 having different detection wavelengths are used as described above, an image sensor that detects the intensity of electromagnetic waves having a plurality of wavelengths can be obtained. This makes it possible to detect electromagnetic waves having a plurality of wavelengths and obtain a color image without using a color filter, which has been conventionally required for CMOS image sensors and the like.
  • a polarization identification image sensor can be formed.
  • polarization imaging can be performed by arranging a plurality of electromagnetic wave detectors for each unit, with four pixels having detection angles of 0 °, 90 °, 45 °, and 135 ° as one unit.
  • the polarization identification image sensor enables, for example, identification of artificial and natural objects, material identification, identification of objects of the same temperature in the infrared wavelength region, identification of boundaries between objects, or equivalent improvement in resolution.
  • the electromagnetic wave detector aggregate according to the present embodiment configured as described above can detect electromagnetic waves in a wide wavelength range. Further, the electromagnetic wave detector aggregate according to the present embodiment can detect electromagnetic waves having different wavelengths.
  • the above-mentioned electromagnetic wave detector assembly includes a plurality of electromagnetic wave detectors.
  • the plurality of electromagnetic wave detectors 200, 201, 202, 203 may be different types of electromagnetic wave detectors.
  • the plurality of electromagnetic wave detectors 200, 201, 202, and 203 may have different detection wavelengths. In this case, electromagnetic waves having different wavelengths can be detected by one set of electromagnetic wave detectors.
  • the contact layer 8 or the semiconductor layer 4 a material whose characteristics are changed by irradiation with electromagnetic waves and which gives a change in potential to the two-dimensional material layer 1 is used. You may.
  • examples of the material whose characteristics are changed by irradiation with electromagnetic waves and which gives a change in potential to the two-dimensional material layer 1 include quantum dots, strong dielectric materials, liquid crystal materials, fullerene, rare earth oxides, semiconductor materials, and pn.
  • a bonding material, a metal-semiconductor bonding material, a metal-insulator-semiconductor bonding material, or the like can be used.
  • the ferroelectric material having a polarization effect (pyroelectric effect) due to electromagnetic waves is used as the ferroelectric material
  • the ferroelectric material the polarization of the ferroelectric material is changed by irradiation with electromagnetic waves.
  • the potential can be changed in the two-dimensional material layer 1.
  • the characteristics of the insulating film 3, the contact layer 8, or the semiconductor layer 4 change due to the irradiation of electromagnetic waves. As a result, the potential can be changed in the two-dimensional material layer 1.
  • a material whose characteristics are changed by irradiation with electromagnetic waves and giving a change in potential to the two-dimensional material layer 1 may be applied to at least one of them.
  • the contact layer 8 does not necessarily have to be in direct contact with the two-dimensional material layer 1. There is no.
  • the contact layer 8 may be provided on the upper surface or the lower surface of the two-dimensional material layer 1 via an insulating film or the like.

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