CN107342345B - 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管 - Google Patents
一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管 Download PDFInfo
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Abstract
本发明属于微纳半导体光电子器件领域，具体涉及一种基于铁电栅介质和薄层MoS2沟道的光电晶体管及其制备方法。该器件包括源极、漏极、沟道、栅极、栅介质、金属焊盘和衬底。源极和漏极为石墨烯，沟道为薄层MoS2，栅介质为PZT铁电薄膜。相比之前同类器件，本发明具有如下优点：1)PZT铁电薄膜大的介电常数提高了栅极对沟道载流子的调控能力；2)PZT铁电薄膜可以利用其剩余极化场强来调控沟道载流子，降低器件功耗；3)PZT铁电薄膜相比有机铁电材料P(VDF‑TrFE)，具有高剩余极化、低矫顽场强、性质稳定且与微电子工艺兼容等优点；4)石墨烯作为源极和漏极，能增强信号光透过率，提高器件光响应度和增益等性能。
Description
技术领域
本发明属于微纳半导体光电子器件领域，具体涉及一种基于石墨烯电极、锆钛酸铅(PZT，PbZrxTi(1-x)O3)铁电薄膜栅介质和薄层二硫化钼(MoS2)沟道的光电晶体管及其制备方法。
背景技术
光电探测器是一类将光信号转变成电信号的器件，被广泛应用于传感、成像、显示和光通信等领域。光电探测器按照工作原理大致可以分为三类：光电导型、光电二极管型和光电晶体管型。光电导型光电探测器由半导体材料和两端的欧姆接触构成，具有高增益和结构简单的优点。光电二极管型光电探测器通常由p-n结、p-i-n结或肖特基结构成，具有响应时间短和探测灵敏度高等优点。光电晶体管是一类三端器件，通常结构包括金属-氧化物-半导体场效应管型、结型场效应晶体管型和金属-半导体场效应晶体管型。其中，金属-氧化物-半导体场效应管型光电晶体管是较常见的一种结构(主要结构包括源极、漏极、沟道、栅极、栅介质和衬底)，其主要原理是利用沟道材料的光电导效应来探测入射光，并且可以通过栅极施加栅压来调控沟道中载流子的输运特性。
继石墨烯发现之后，二维半导体材料，比如MoS2，由于其独特的物理特性，也成为学术界关注的焦点之一。MoS2体材料是禁带宽度约1.2eV的间接带隙半导体。随着其厚度的减少，其带隙逐渐变大，单层MoS2为禁带宽度约1.85eV的直接带隙半导体。H.Zhang等人[ACS Nano6,74(2012)]最早报道的背栅结构的基于单层MoS2光电晶体管中栅介质为SiO2，源极和漏极为Ti/Au，其光响应度约7.5mA/W。H.Lee等人[Nano Letters 12,3695(2012)]制备了顶栅结构的薄层MoS2光电晶体管，其中Al2O3作为栅介质，Au作为源极和漏极。X.Wang等人[Advanced Materials 27,6575(2015)]制备了一种利用有机铁电材料P(VDF-TrFE)作为栅介质，Cr/Au作为源极和漏极，薄层MoS2作为沟道的光电晶体管，其最大光响应度约2570A/W。然而，有机铁电材料P(VDF-TrFE)具有如下难以克服的缺点：较慢的铁电畴反转速率，较高的矫顽场强，较差的机械和热稳定性，并且不与微电子工艺兼容。
发明内容
针对现有技术的不足，本发明提出了一种以石墨烯作为电极，PZT铁电薄膜作为栅介质，薄层MoS2作为沟道的光电晶体管及其制备方法。相比之前的薄层MoS2光电晶体管，本发明具有如下优点：(1)PZT铁电薄膜的介电常数约1000，远远高于SiO2、HfO2和Al2O3等传统栅介质，可以大大提高栅极对沟道载流子输运的调控能力；(2)相比SiO2、HfO2和Al2O3等非铁电栅介质，PZT铁电薄膜可以在不施加栅压的情况下利用其剩余极化场强来调控沟道中载流子的输运特性，从而可以降低器件的功耗；(3)PZT铁电薄膜相比有机铁电材料P(VDF-TrFE)，具有高剩余极化、低矫顽场强、化学性质稳定且与微电子工艺兼容等优点；(4)相比金属材料，利用石墨烯作为光电晶体管的源极和漏极材料，能够增强信号光的透过率(单层石墨烯在可见光范围的透过率大于97％)，从而提高器件的光响应度和增益等性能。
本发明是通过如下技术方案予以实现的：一种基于石墨烯电极、PZT铁电薄膜栅介质和薄层MoS2沟道的光电晶体管，主要包括源极、漏极、沟道、栅极、栅介质、金属焊盘和衬底。其中，源极和漏极材料为石墨烯(厚度约1-30层)，沟道材料为薄层(1-30层)MoS2，栅极为金属或者导电氧化物，栅介质为PZT铁电薄膜。该光电晶体管为背栅结构，即薄层MoS2沟道位于PZT铁电薄膜栅介质上表面，栅极位于PZT铁电薄膜栅介质下表面，石墨烯源极和石墨烯漏极分别位于薄层MoS2沟道两侧且与其接触。
本发明提出的光电晶体管具体制备流程如下：
a)通过薄膜沉积工艺(磁控溅射、脉冲激光沉积、热蒸发或电子束蒸发等)在衬底上(例如，SiO2/Si或者SrTiO3基片)制备出一定厚度的导电层(金属或者导电氧化物)，作为栅极；
b)通过薄膜沉积工艺(磁控溅射、脉冲激光沉积、溶胶凝胶法或金属有机物化学气相沉积等)，在栅极上制备一定厚度的PZT铁电薄膜，作为栅介质；
c)通过光刻、显影、金属化和剥离等工艺在PZT铁电薄膜表面制备出一定厚度金属焊盘(例如，Cr/Au)；金属焊盘是为了后续的引线焊接(wire bonding)使用，以方便器件测试；
d)采用化学气相沉积法在金属衬底(Cu或者Ni箔)上制备出石墨烯；通过石墨烯的转移和图形化工艺，将金属衬底上的石墨烯转移到PZT铁电薄膜表面并将其图形化，作为源极和漏极；石墨烯覆盖金属焊盘边缘部分；
e)所述将石墨烯转移到PZT铁电薄膜上具体包括如下步骤：首先在石墨烯表面旋涂一层聚甲基丙烯酸甲酯(PMMA)薄膜，然后将其浸泡于FeCl3或(NH4)2S2O8腐蚀溶液中，腐蚀掉金属衬底，得到悬浮于腐蚀溶液表面的石墨烯；用PZT铁电薄膜将悬浮在腐蚀溶液中的石墨烯捞起，进行适当热处理(温度约60-150℃，时间约30分钟)，用丙酮去掉石墨烯表面的PMMA，最终得到表面覆盖有石墨烯的PZT铁电薄膜；
f)所述石墨烯图形化工艺步骤具体如下：首先在石墨烯薄膜表面旋涂一层光刻胶或PMMA，用紫外光刻或电子束曝光等工艺将光刻胶或PMMA图形化，利用光刻胶或PMMA作为掩膜，结合干法刻蚀工艺制备出所需图形的石墨烯薄膜；
g)将采用机械剥离法或化学气相沉积法制备在SiO2/Si衬底上的薄层MoS2通过定点转移工艺转移到PZT铁电薄膜上，覆盖石墨烯源极和漏极两端，作为沟道；
h)所述薄层MoS2定点转移工艺步骤具体如下：在采用机械剥离法或化学气相沉积法制备在SiO2/Si衬底上的薄层MoS2表面旋涂一层PMMA，将PMMA/MoS2/SiO2/Si切成约3mm×3mm的小块，然后将其投入到一定浓度的氢氟酸水溶液中，待SiO2去除后，PMMA/MoS2会漂浮在溶液表面，将其转移到去离子水中漂洗2-3次后，用微探针在光学显微镜下将PMMA/MoS2转移至PZT铁电薄膜上，覆盖石墨烯源极和漏极两端，用丙酮去掉MoS2表面的PMMA。
附图说明
图1，本发明的制备流程示意图。
图2，本发明的整体结构示意图。1，衬底；2，栅极；3，PZT铁电薄膜栅介质；4，金属焊盘；5，石墨烯源极；6，石墨烯漏极；7，薄层MoS2沟道。
具体实施方式
为了使本发明的内容被更清楚地理解，下面结合附图根据具体实施例对本发明作进一步说明。
参照图2，一种基于石墨烯电极、PZT铁电薄膜栅介质和薄层MoS2沟道的光电晶体管，主要包括衬底1、栅极2、栅介质3、金属焊盘4、源极5、漏极6和沟道7。其中，衬底1为SiO2/Si或者SrTiO3基片，栅极2为金属(例如，Ti/Pt)或者导电氧化物(例如，SrRuO3)，栅介质3为PZT铁电薄膜，源极5和漏极6为石墨烯(厚度约1-30层)，沟道7为薄层(1-30层)MoS2。该光电晶体管为背栅结构，即薄层MoS2沟道7位于PZT铁电薄膜栅介质3上表面，栅极2位于PZT铁电薄膜栅介质3下表面，石墨烯源极5和石墨烯漏极6分别位于薄层MoS2沟道7两侧且与其接触。其具体制备过程如下：
1.通过薄膜沉积工艺(磁控溅射、脉冲激光沉积、热蒸发或电子束蒸发等)在衬底1上(例如，SiO2/Si或者SrTiO3基片)制备出一定厚度的导电层(例如，Ti/Pt或者SrRuO3)，作为栅极2；
2.通过薄膜沉积工艺(磁控溅射、脉冲激光沉积、溶胶凝胶法或金属有机物化学气相沉积等)，在栅极上制备一定厚度的PZT铁电薄膜，作为栅介质3；
3.通过光刻、显影、金属化和剥离等工艺在PZT铁电薄膜表面制备出一定厚度金属焊盘4(例如，Cr/Au)；金属焊盘4是为了后续的引线焊接(wire bonding)使用，以方便器件测试；
4.采用化学气相沉积法在金属衬底(Cu或者Ni箔)上制备出石墨烯；通过石墨烯的转移和图形化工艺，将金属衬底上的石墨烯转移到PZT铁电薄膜3表面并将其图形化，作为源极5和漏极6；石墨烯覆盖金属焊盘4边缘部分；
5.所述将石墨烯转移到PZT铁电薄膜上具体包括如下步骤：首先在石墨烯表面旋涂一层聚甲基丙烯酸甲酯(PMMA)薄膜，然后将其浸泡于FeCl3或(NH4)2S2O8腐蚀溶液中，腐蚀掉金属衬底，得到悬浮于腐蚀溶液表面的石墨烯；用PZT铁电薄膜将悬浮在腐蚀溶液中的石墨烯捞起，进行适当热处理(温度约60-150℃，时间约30分钟)，用丙酮去掉石墨烯表面的PMMA，最终得到表面覆盖有石墨烯的PZT铁电薄膜；
6.所述石墨烯图形化工艺步骤具体如下：首先在石墨烯薄膜表面旋涂一层光刻胶或PMMA，用紫外光刻或电子束曝光等工艺将光刻胶或PMMA图形化，利用光刻胶或PMMA作为掩膜，结合干法刻蚀工艺制备出所需图形的石墨烯薄膜；
7.将采用机械剥离法或化学气相沉积法制备在SiO2/Si衬底上的薄层MoS2通过定点转移工艺转移到PZT铁电薄膜3上，覆盖石墨烯源极5和漏极6两端，作为沟道；
8.所述薄层MoS2定点转移工艺步骤具体如下：在采用机械剥离法或化学气相沉积法制备在SiO2/Si衬底上的薄层MoS2表面旋涂一层PMMA，将PMMA/MoS2/SiO2/Si切成约3mm×3mm的小块，然后将其投入到一定浓度的氢氟酸水溶液中，待SiO2去除后，PMMA/MoS2会漂浮在溶液表面，将其转移到去离子水中漂洗2-3次后，用微探针在光学显微镜下将PMMA/MoS2转移至PZT铁电薄膜上，覆盖石墨烯源极和漏极两端，用丙酮去掉MoS2表面的PMMA。
值得一提的是，以上实施例的说明只是为了帮助理解本发明的方法及其核心思想，但本发明绝非局限于实施例，在不脱离本发明特征和思想下做出的各种改进、替换或组合等，均包含在本发明的保护范围之内。
Claims (6)
1.一种基于石墨烯电极、PZT铁电薄膜栅介质和薄层MoS2沟道的光电晶体管，主要包括源极、漏极、沟道、栅极、栅介质、金属焊盘和衬底，其特征在于以下制备步骤：
a)通过薄膜沉积工艺在衬底上制备一定厚度的导电层，作为栅极；所述薄膜沉积工艺为磁控溅射、脉冲激光沉积、热蒸发或电子束蒸发，所述衬底为SiO2/Si或SrTiO3基片，所述导电层为金属或导电氧化物；
b)通过薄膜沉积工艺在栅极上制备一定厚度的PZT铁电薄膜，作为栅介质；所述薄膜沉积工艺为磁控溅射、脉冲激光沉积、溶胶凝胶法或金属有机物化学气相沉积；
c)通过光刻、显影、金属化和剥离工艺在PZT铁电薄膜表面制备出金属焊盘；
d)采用化学气相沉积法在金属衬底上制备出石墨烯；所述金属衬底为Cu或Ni箔；通过石墨烯的转移和图形化工艺，将金属衬底上的石墨烯转移到PZT铁电薄膜表面并将其图形化，作为源极和漏极；石墨烯覆盖金属焊盘边缘部分；
e)将采用机械剥离法或化学气相沉积法制备在SiO2/Si衬底上的薄层MoS2通过定点转移工艺转移到PZT铁电薄膜上，覆盖石墨烯源极和漏极两端，作为沟道。
2.根据权利要求1所述的一种基于石墨烯电极、PZT铁电薄膜栅介质和薄层MoS2沟道的光电晶体管，其特征在于，源极和漏极材料为石墨烯，沟道材料为薄层MoS2，栅介质为PZT铁电薄膜，栅极为金属或者导电氧化物，衬底为SiO2/Si或者SrTiO3基片；所述石墨烯和薄层MoS2的厚度均为1-30层。
3.根据权利要求1所述的一种基于石墨烯电极、PZT铁电薄膜栅介质和薄层MoS2沟道的光电晶体管，其特征在于，器件为背栅结构，即薄层MoS2沟道位于PZT铁电薄膜栅介质上表面，栅极位于PZT铁电薄膜栅介质下表面，石墨烯源极和石墨烯漏极分别位于薄层MoS2沟道两侧且与其接触。
4.根据权利要求1所述的一种基于石墨烯电极、PZT铁电薄膜栅介质和薄层MoS2沟道的光电晶体管，其特征在于，将石墨烯转移到PZT铁电薄膜上具体包括如下步骤：首先在石墨烯表面旋涂一层聚甲基丙烯酸甲酯(PMMA)薄膜，然后将其浸泡于FeCl3或(NH4)2S2O8腐蚀溶液中，腐蚀掉金属衬底，得到悬浮于腐蚀溶液表面的石墨烯；用PZT铁电薄膜将悬浮在腐蚀溶液中的石墨烯捞起，进行适当热处理；所述热处理温度为60-150℃，时间为30分钟；用丙酮去掉石墨烯表面的PMMA，最终得到表面覆盖有石墨烯的PZT铁电薄膜。
5.根据权利要求1所述的一种基于石墨烯电极、PZT铁电薄膜栅介质和薄层MoS2沟道的光电晶体管，其特征在于，所述石墨烯图形化工艺步骤具体如下：首先在石墨烯薄膜表面旋涂一层光刻胶或PMMA，用紫外光刻或电子束曝光工艺将光刻胶或PMMA图形化，利用光刻胶或PMMA作为掩膜，结合干法刻蚀工艺制备出所需图形的石墨烯薄膜。
6.根据权利要求1所述的一种基于石墨烯电极、PZT铁电薄膜栅介质和薄层MoS2沟道的光电晶体管，其特征在于，所述薄层MoS2定点转移工艺步骤具体如下：在采用机械剥离法或化学气相沉积法制备在SiO2/Si衬底上的薄层MoS2表面旋涂一层PMMA，将PMMA/MoS2/SiO2/Si切成3mm×3mm的小块，然后将其投入到一定浓度的氢氟酸水溶液中，待SiO2溶解后，PMMA/MoS2会漂浮在溶液表面，将其转移到去离子水中漂洗2-3次后，用微探针在光学显微镜下将PMMA/MoS2转移至PZT铁电薄膜上，覆盖石墨烯源极和漏极两端，用丙酮去掉MoS2表面的PMMA。
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