CN115699338B - 电磁波检测器以及电磁波检测器阵列 - Google Patents

电磁波检测器以及电磁波检测器阵列

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Publication number
CN115699338B
CN115699338B CN202180040678.0A CN202180040678A CN115699338B CN 115699338 B CN115699338 B CN 115699338B CN 202180040678 A CN202180040678 A CN 202180040678A CN 115699338 B CN115699338 B CN 115699338B
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CN
China
Prior art keywords
layer
electromagnetic wave
dimensional material
material layer
wave detector
Prior art date
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Active
Application number
CN202180040678.0A
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English (en)
Chinese (zh)
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CN115699338A (zh
Inventor
岛谷政彰
小川新平
福岛昌一郎
奥田聪志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN115699338A publication Critical patent/CN115699338A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
CN202180040678.0A 2020-06-15 2021-03-10 电磁波检测器以及电磁波检测器阵列 Active CN115699338B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-102988 2020-06-15
JP2020102988 2020-06-15
PCT/JP2021/009541 WO2021256016A1 (ja) 2020-06-15 2021-03-10 電磁波検出器および電磁波検出器アレイ

Publications (2)

Publication Number Publication Date
CN115699338A CN115699338A (zh) 2023-02-03
CN115699338B true CN115699338B (zh) 2026-02-27

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Country Status (5)

Country Link
US (1) US20230147241A1 (https=)
EP (1) EP4167302A4 (https=)
JP (1) JP7550854B2 (https=)
CN (1) CN115699338B (https=)
WO (1) WO2021256016A1 (https=)

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CN112272869B (zh) * 2018-06-28 2024-03-15 三菱电机株式会社 使用石墨烯的电子器件、该使用石墨烯的电子器件的制造方法以及具备该使用石墨烯的电子器件的电磁波检测器
TWI783805B (zh) * 2021-12-01 2022-11-11 天光材料科技股份有限公司 光電半導體之結構
JP7433533B1 (ja) * 2022-04-22 2024-02-19 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
US20250185514A1 (en) * 2022-04-25 2025-06-05 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array
WO2025046162A1 (en) * 2023-08-25 2025-03-06 Aalto University Foundation Sr Spectrometer
WO2025109660A1 (ja) * 2023-11-20 2025-05-30 三菱電機株式会社 ガス検出器及びガス検出器アレイ

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WO2020003564A1 (ja) * 2018-06-28 2020-01-02 三菱電機株式会社 グラフェンを用いた電子デバイス、その製造方法及びそれを備えた電磁波検出器

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WO2014036002A1 (en) 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
KR102255301B1 (ko) * 2014-05-19 2021-05-24 삼성전자주식회사 강유전성 물질을 포함하는 광전자소자
KR102237826B1 (ko) * 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
EP3107127B1 (en) * 2015-06-15 2022-03-30 Nokia Technologies Oy Device for sensing radiation
KR101938934B1 (ko) * 2016-03-02 2019-04-10 광주과학기술원 이득조절이 가능한 그래핀-반도체 쇼트키 접합 광전소자
WO2018012076A1 (ja) * 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
CN106784122B (zh) * 2016-12-01 2018-06-22 浙江大学 基于石墨烯/掺硼硅量子点/硅的光电探测器及制备方法
CN110402373B (zh) * 2017-03-22 2021-07-30 三菱电机株式会社 电磁波检测器、电磁波检测器阵列以及电磁波检测方法
CN107342345B (zh) * 2017-06-27 2019-05-21 重庆大学 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管
CN109449244B (zh) * 2018-10-22 2020-06-26 中国科学院上海技术物理研究所 一种二维半导体和铁电材料功能互补型超宽光谱探测器
JP6884288B1 (ja) * 2019-07-04 2021-06-09 三菱電機株式会社 電磁波検出器
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JP7499857B2 (ja) * 2020-06-17 2024-06-14 三菱電機株式会社 電磁波検出器および電磁波検出器集合体
JP7403670B2 (ja) * 2020-08-25 2023-12-22 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
US20230332942A1 (en) * 2020-10-26 2023-10-19 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array
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Also Published As

Publication number Publication date
JPWO2021256016A1 (https=) 2021-12-23
US20230147241A1 (en) 2023-05-11
EP4167302A4 (en) 2023-12-13
JP7550854B2 (ja) 2024-09-13
CN115699338A (zh) 2023-02-03
EP4167302A1 (en) 2023-04-19
WO2021256016A1 (ja) 2021-12-23

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