JP7550854B2 - 電磁波検出器および電磁波検出器アレイ - Google Patents

電磁波検出器および電磁波検出器アレイ Download PDF

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JP7550854B2
JP7550854B2 JP2022532297A JP2022532297A JP7550854B2 JP 7550854 B2 JP7550854 B2 JP 7550854B2 JP 2022532297 A JP2022532297 A JP 2022532297A JP 2022532297 A JP2022532297 A JP 2022532297A JP 7550854 B2 JP7550854 B2 JP 7550854B2
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electromagnetic wave
dimensional material
material layer
wave detector
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JPWO2021256016A1 (https=
JPWO2021256016A5 (https=
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政彰 嶋谷
新平 小川
昌一郎 福島
聡志 奥田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
JP2022532297A 2020-06-15 2021-03-10 電磁波検出器および電磁波検出器アレイ Active JP7550854B2 (ja)

Applications Claiming Priority (3)

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JP2020102988 2020-06-15
JP2020102988 2020-06-15
PCT/JP2021/009541 WO2021256016A1 (ja) 2020-06-15 2021-03-10 電磁波検出器および電磁波検出器アレイ

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JPWO2021256016A1 JPWO2021256016A1 (https=) 2021-12-23
JPWO2021256016A5 JPWO2021256016A5 (https=) 2022-12-28
JP7550854B2 true JP7550854B2 (ja) 2024-09-13

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US (1) US20230147241A1 (https=)
EP (1) EP4167302A4 (https=)
JP (1) JP7550854B2 (https=)
CN (1) CN115699338B (https=)
WO (1) WO2021256016A1 (https=)

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* Cited by examiner, † Cited by third party
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CN112272869B (zh) * 2018-06-28 2024-03-15 三菱电机株式会社 使用石墨烯的电子器件、该使用石墨烯的电子器件的制造方法以及具备该使用石墨烯的电子器件的电磁波检测器
TWI783805B (zh) * 2021-12-01 2022-11-11 天光材料科技股份有限公司 光電半導體之結構
JP7433533B1 (ja) * 2022-04-22 2024-02-19 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
US20250185514A1 (en) * 2022-04-25 2025-06-05 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array
WO2025046162A1 (en) * 2023-08-25 2025-03-06 Aalto University Foundation Sr Spectrometer
WO2025109660A1 (ja) * 2023-11-20 2025-05-30 三菱電機株式会社 ガス検出器及びガス検出器アレイ

Citations (7)

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US20150333196A1 (en) 2014-05-19 2015-11-19 Research & Business Foundation Sungkyunkwan University Optoelectronic device including ferroelectric material
JP2016025356A (ja) 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
CN106784122A (zh) 2016-12-01 2017-05-31 浙江大学 基于石墨烯/掺硼硅量子点/硅的光电探测器及制备方法
CN107342345A (zh) 2017-06-27 2017-11-10 重庆大学 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管
WO2018012076A1 (ja) 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US20180175217A1 (en) 2015-06-15 2018-06-21 Nokia Technologies Oy Device for Sensing Radiation
US20200127155A1 (en) 2018-10-22 2020-04-23 Shanghai Institute Of Technical Physics, Chinese Academy Of Sciences Ultra-broad spectrum detector integrated with functions of two-dimensional semiconductor and ferroelectric material

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WO2014036002A1 (en) 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
KR101938934B1 (ko) * 2016-03-02 2019-04-10 광주과학기술원 이득조절이 가능한 그래핀-반도체 쇼트키 접합 광전소자
CN110402373B (zh) * 2017-03-22 2021-07-30 三菱电机株式会社 电磁波检测器、电磁波检测器阵列以及电磁波检测方法
CN112272869B (zh) * 2018-06-28 2024-03-15 三菱电机株式会社 使用石墨烯的电子器件、该使用石墨烯的电子器件的制造方法以及具备该使用石墨烯的电子器件的电磁波检测器
JP6884288B1 (ja) * 2019-07-04 2021-06-09 三菱電機株式会社 電磁波検出器
WO2021124609A1 (ja) * 2019-12-17 2021-06-24 三菱電機株式会社 電磁波検出器および電磁波検出器集合体
JP7499857B2 (ja) * 2020-06-17 2024-06-14 三菱電機株式会社 電磁波検出器および電磁波検出器集合体
JP7403670B2 (ja) * 2020-08-25 2023-12-22 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
US20230332942A1 (en) * 2020-10-26 2023-10-19 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array
WO2023112751A1 (ja) * 2021-12-13 2023-06-22 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150333196A1 (en) 2014-05-19 2015-11-19 Research & Business Foundation Sungkyunkwan University Optoelectronic device including ferroelectric material
JP2016025356A (ja) 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
US20180175217A1 (en) 2015-06-15 2018-06-21 Nokia Technologies Oy Device for Sensing Radiation
WO2018012076A1 (ja) 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
CN106784122A (zh) 2016-12-01 2017-05-31 浙江大学 基于石墨烯/掺硼硅量子点/硅的光电探测器及制备方法
CN107342345A (zh) 2017-06-27 2017-11-10 重庆大学 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管
US20200127155A1 (en) 2018-10-22 2020-04-23 Shanghai Institute Of Technical Physics, Chinese Academy Of Sciences Ultra-broad spectrum detector integrated with functions of two-dimensional semiconductor and ferroelectric material

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JPWO2021256016A1 (https=) 2021-12-23
US20230147241A1 (en) 2023-05-11
EP4167302A4 (en) 2023-12-13
CN115699338A (zh) 2023-02-03
EP4167302A1 (en) 2023-04-19
WO2021256016A1 (ja) 2021-12-23
CN115699338B (zh) 2026-02-27

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