WO2021248877A1 - 复合材料、复合材料的制备方法和发光二极管 - Google Patents

复合材料、复合材料的制备方法和发光二极管 Download PDF

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WO2021248877A1
WO2021248877A1 PCT/CN2020/139300 CN2020139300W WO2021248877A1 WO 2021248877 A1 WO2021248877 A1 WO 2021248877A1 CN 2020139300 W CN2020139300 W CN 2020139300W WO 2021248877 A1 WO2021248877 A1 WO 2021248877A1
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oxide nanoparticles
metal oxide
composite material
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French (fr)
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张旋宇
聂志文
刘文勇
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Tcl科技集团股份有限公司
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Definitions

  • This application relates to the field of display technology, in particular to a composite material, a method for preparing the composite material, and a light-emitting diode.
  • the solution method is often used to prepare the electronic functional layer in the preparation of QLED devices.
  • metal oxide nanoparticles such as ZnO are used as the electron transport layer (ETL) of the QLED to be spin-coated on the quantum dot light-emitting layer.
  • ETL electron transport layer
  • a method for preparing a composite material which includes the following steps:
  • the mixed solution is heated to obtain the composite material.
  • a composite material including: a polyaromatic ring compound and metal oxide nanoparticles, where the polyaromatic ring compound is connected to the metal oxide nanoparticles;
  • the structure of the polyaromatic ring compound is as shown in the general formula I, Ar 1 , Ar 2 , Ar 3 and Ar 4 are selected from aromatic rings, and X 1 , X 2 and X 3 are selected from the group capable of being oxidized with the metal
  • a light emitting diode including:
  • a light-emitting layer provided between the anode and the cathode
  • An electronic functional layer arranged between the cathode and the light-emitting layer
  • the material of the electronic functional layer includes: the composite material obtained by the aforementioned preparation method or the aforementioned composite material.
  • the light-emitting diode provided by the embodiment of the present application has an electronic functional layer prepared by the above-mentioned preparation method, and has high brightness, long life, and excellent light-emitting performance.
  • Figure 1 is a flow chart of a method for preparing a composite material provided by an embodiment of the present application
  • Figure 2 is a schematic diagram of the microstructure of a composite material prepared by the preparation method provided in an embodiment of the present application
  • Fig. 3 is a schematic structural diagram of a light emitting diode provided by an embodiment of the present application.
  • a method for preparing a composite material includes the following steps:
  • Ar 1 , Ar 2 , Ar 3 and Ar 4 are selected from aromatic rings
  • X 1 , X 2 and X 3 are selected from Active groups combined with metal oxide nanoparticles
  • the preparation method of the composite material provided in the examples of the application adopts the polyaromatic ring compound with the structure shown in the general formula I as the doping material, and the polyaromatic ring compound and the metal oxide nanoparticles are mixed and heated, and the active group
  • the clusters are coordinately connected with the metal atoms on the surface of the metal oxide nanoparticles, so that the polyaromatic ring compound and the metal oxide nanoparticles are interwoven to form a three-dimensional network structure.
  • the polyaromatic ring compound has a planar triangular structure, the metal is oxidized.
  • Nanoparticles are arranged in an orderly manner during film formation to form a layered superlattice structure.
  • Zinc oxide nanoparticles that are not connected to polyaromatic compounds are filled in the micropores of the structure, thereby effectively improving the film performance of the metal oxide film. And crystallization performance.
  • the above-mentioned polyaromatic compound is doped with metal oxide nanoparticles, and the polyaromatic compound effectively occupies the oxygen vacancies on the surface of the metal oxide nanoparticles through active groups, which reduces the formation energy of oxygen vacancies to a certain extent. , It promotes the probability of oxygen atoms on the surface of metal oxide nanoparticles to detach to form vacancies, and increases the concentration of oxygen vacancies, thereby effectively reducing the resistance of the composite material, which is conducive to improving the resistance transmission performance of the material.
  • doping polyaromatic compounds in the composite material adjusts the polarity of the mixed solution, improves the interface contact performance between the metal oxide nanoparticles and the quantum dot light-emitting layer, which is beneficial to further improve the surface properties of the material , Enhance electron injection.
  • the composite material prepared by the above preparation method has an orderly structure, high density, and few surface defects, which is beneficial to improve the conduction and recombination ability of electrons at the interface, enhance electron injection, reduce charge accumulation at the QD/ETL interface, and effectively balance The hole and electron injection rate of the device, thereby improving the brightness and lifetime of the light-emitting device as a whole.
  • step S01 the molecular structure of the polyaromatic ring compound is as shown in general formula I:
  • Ar 1 , Ar 2 , Ar 3 and Ar 4 are selected from aromatic rings.
  • aromatic ring refers to a type of planar ring system with conjugated structure, including benzene ring and fused ring, etc.
  • fused ring includes but not limited to naphthalene ring, anthracene ring, phenanthrene ring, etc., at the same time, benzene
  • the ring may be a substituted benzene ring or an unsubstituted benzene ring.
  • Ar 1 , Ar 2 , Ar 3 and Ar 4 are selected from benzene rings.
  • X 1 , X 2 and X 3 are selected from active groups capable of binding to metal oxide nanoparticles, through which active groups are coordinately connected to metal atoms on the surface of metal oxide nanoparticles, a plurality of metal oxide nanoparticles and Multiple polyaromatic ring compounds are interwoven to form a composite material with a layered superlattice structure, which promotes the orderly arrangement of metal oxide nanoparticles during film formation, and improves the film performance and crystallization performance of the metal oxide film.
  • X 1 , X 2 and X 3 are each independently selected from at least one of a hydroxyl group, a carboxyl group, a mercapto group, and an amino group.
  • alkylene is a type of organic group containing only two atoms of carbon and hydrogen, which can be linear, branched or cyclic, including but not limited to methylene, ethylene Group, isopropylidene, n-pentylene, etc.
  • Amino group is a type of N-containing organic group with at most one hydrogen atom attached, including but not limited to -NH-, -N(CH 3 )-, -N(CH 2 CH 3 )-, etc.
  • Alkenyl is a hydrocarbon group containing at least one carbon-carbon double bond, including but not limited to vinyl, propenyl, allyl and the like.
  • Alkynyl refers to a hydrocarbon group containing at least one carbon-carbon triple bond, including but not limited to ethynyl, propynyl and the like.
  • a conjugated large ⁇ bond is formed in the center of the polyaromatic ring compound, which has a hyper-conjugation effect, which is beneficial to improve the electronic conductivity of the composite material.
  • the polyaromatic ring compound has a highly rigid planar structure, which improves the crystallinity of the composite material with a layered superlattice structure to a certain extent, thereby further improving the film performance and crystallization performance of the metal oxide thin film.
  • the polyaromatic ring compound has a stable planar triangular structure.
  • the polyaromatic ring compound and metal oxide nanoparticles assemble to form a layered superlattice structure, which is isotropic and has the same chemical potential energy in all directions in space. , To promote the orderly combination of metal oxide nanoparticles and active groups in all directions, thereby forming a composite material with stable crystal structure and stable properties.
  • n, and y are each independently selected from 0 or a positive integer.
  • Ar 1 , Ar 2 and Ar 3 and Ar 4 are directly connected by carbon-carbon single bonds; when m, n and y are not 0, Ar 1 , Ar 2 and Ar 3 and Ar 4 are connected through R 1 , R 2 and R 3 and other linking groups.
  • the positive integers are preferably 1-3, for example, m, n, and y may all be 1; or, m is 2, and n and y are both 1; or, m Is 1, n is 2, and y is 3.
  • m, n, and y are each independently selected from 0 or 1.
  • m, n, and y are all selected as 0 or 1; or, m is 0, and both n and y are selected as 1; or, both m and y are selected as 1, and n is 0.
  • the polyaromatic ring compound has a certain conjugation effect to ensure that the composite material has a certain electronic conductivity, and at the same time, it is ensured that the polyaromatic ring compound and the metal oxide nanoparticles are combined to form a layered superlattice structure.
  • the polyaromatic ring compound is selected from any one or more of the following compounds:
  • the polyaromatic ring compound is selected from at least one of the following compounds:
  • the several polyaromatic ring compounds listed above all have a highly symmetrical planar structure, and their charge centers are all on the benzene ring in the middle. They have a strong conjugation effect and form a super-coordinated connection with metal oxide nanoparticles. The range of the yoke effect is sufficient to connect the charge centers of different molecules, so that electrons can jump on different charge centers, which greatly enhances the carrier transport performance of the composite material; at the same time, the above-mentioned polyaromatic ring compounds all have a triangular structure , Excellent stability, no matter from which direction the external electric field or chemical potential attacks, it can ensure consistent stability, and there is no easy-to-attack site.
  • the polyaromatic ring compound is selected as any one of the following compounds:
  • the metal oxide nanoparticles are selected as n-type semiconductor nanoparticles to be used in the preparation of electronic functional layers in light-emitting diodes.
  • the metal oxide nanoparticles include zinc oxide nanoparticles and/or indium tin oxide nanoparticles.
  • the metal oxide nanoparticles are selected as zinc oxide nanoparticles.
  • the zinc oxide nanoparticles have a high electron mobility and a wide band gap. The conduction band and valence band positions are more suitable in the light emitting diode structure.
  • the size of the zinc oxide nanoparticles is 4-5nm, and the zinc oxide nanoparticles within this size range have good dispersing performance in the solvent, and are compatible with the size of the ligands of several polyaromatic ring compounds selected above. (Approximately 2nm) matching is beneficial to improve the production efficiency of composite materials.
  • step S02 the polyaromatic ring compound and the metal oxide nanoparticles are dispersed in a solvent, so that the polyaromatic ring compound and the metal oxide nanoparticles are fully mixed and contacted in the solution.
  • the step of dispersing polyaromatic ring compounds and metal oxide nanoparticles in a solvent includes:
  • the specific operation of dissolving the metal oxide nanoparticles in the solvent can refer to conventional techniques in the art, such as mechanical stirring, ultrasound and other methods to dissolve the metal oxide nanoparticles in the solvent to form a clear metal oxide solution.
  • the steps of dissolving polyaromatic ring compounds in solvents are the same.
  • the solvent can be selected as a common organic solvent in the field, including but not limited to alkanes, alkenes, alcohols, ethers and aromatic compounds, etc., and does not affect metal oxide nanoparticles and polyaromatic compounds It is easy to assemble and volatilize.
  • the solvent is selected as a polar or moderately polar solvent.
  • the quantum dot material of the light-emitting layer of existing light-emitting diodes is mainly oil-phase quantum dots.
  • a polar or medium-polar solvent is used to dissolve a mixed solution formed by polyaromatic ring compounds and metal oxide nanoparticles and quantum dots.
  • Orthogonal properties can prevent the solvent from eroding the light-emitting layer and causing damage to the film structure of the light-emitting layer.
  • the solvent is selected from at least one of ethanol, propanol, butanol, and pentanol.
  • the film properties of the prepared composite material are controlled by adjusting the relative amounts of polyaromatic ring compounds and metal oxide nanoparticles.
  • the molar ratio of the polyaromatic ring compound and the metal oxide nanoparticles in the mixed solution is (1-5): 30, and the amount of the polyaromatic ring compound and the metal oxide nanoparticles is controlled at the above molar ratio.
  • the composite material can have excellent film properties.
  • 1,3,5-tris(4-carboxyphenyl)benzene passes through its terminal carboxyl group Part of the zinc oxide nanoparticles are coordinated and connected to form a cross-linked network structure, and the remaining zinc oxide nanoparticles are filled in the micropores of the structure, thereby reducing the microporous defects of the zinc oxide film, improving the crystallinity and causing the zinc oxide film density.
  • the doping amount of the polyaromatic compound is too small, and it cannot improve the film performance and crystallization performance of the material; when the polyaromatic ring
  • the molar ratio of the compound to the metal oxide nanoparticles is greater than 5:30, and the doping amount of the polyaromatic compound is too much, which easily leads to the increase of microporous defects in the material film.
  • step S03 in the process of heating the mixed solution, the polyaromatic compound and the metal oxide nanoparticles are assembled to form a layered superlattice structure similar to MOFs and the solvent is volatilized, which promotes the order of the metal oxide nanoparticles Arrange into a film to obtain an organic-inorganic composite material.
  • the heating temperature is 80° C. to 140° C., and the heating time is 30 minutes to 2 hours.
  • the temperature is less than 80°C, the minimum activation energy requirement for the crystallization of the composite material cannot be reached; when the temperature is greater than 140°C, it is easy to affect the structural stability of the metal oxide nanoparticles.
  • the heating time is less than 40 minutes, the crystallization process of the composite material cannot be completed; when the heating time is greater than 2 hours, the structure of the metal oxide nanoparticles will be adversely affected.
  • the mixed solution in the step of heating the mixed solution, is deposited on the substrate, and then the heating treatment is performed.
  • the substrate serves as a carrier for the deposition of the mixed solution to promote film formation of the composite material.
  • the type and structure of the substrate can refer to the conventional technology in the field, and it can be a glass plate or a glass plate with a functional film layer formed on the surface.
  • the mixed solution in the step of heating the mixed solution, is deposited on the substrate and heated at 80° C.-140° C. for 30 minutes to 2 hours.
  • the final composite material has excellent film properties and crystalline properties, which effectively solves the problem of the existing metal oxide nanoparticles in spin coating.
  • the membrane structure behind the membrane often appears as a disordered loose structure, which leads to the problem of poor quality of the electron transport layer, and effectively improves the conduction and recombination ability of electrons at the interface, enhances electron injection, and reduces charge accumulation at the QD/ETL interface. Effectively balance the hole and electron injection rate of the device, thereby improving the brightness and lifetime of the light-emitting device as a whole.
  • the embodiment of the present invention also provides a composite material and a light emitting diode.
  • a composite material includes: a polyaromatic ring compound and metal oxide nanoparticles, the polyaromatic ring compound is connected to the metal oxide nanoparticles;
  • the structure of the polyaromatic ring compound is as shown in general formula I, Ar 1 , Ar 2 , Ar 3 and Ar 4 are selected from aromatic rings, and X 1 , X 2 and X 3 are selected from the group capable of being oxidized with the metal
  • the composite material provided by the embodiment of the present invention is prepared by the above-mentioned preparation method and includes mutually cross-linked polyaromatic compound and metal oxide nanoparticles. It has an orderly structure, high density, few surface defects, and good surface properties. , Which is beneficial to improve the brightness and life of the light-emitting device.
  • the composite material prepared by the above-mentioned preparation method provided by the embodiment of the present invention preferably exists in the form of a film, has an orderly structure, high density, few surface defects, and excellent surface properties of the material.
  • Ar 1 , Ar 2 , Ar 3 and Ar 4 are selected from benzene ring; and/or
  • X 1 , X 2 and X 3 are each independently selected from at least one of a hydroxyl group, a carboxyl group, a mercapto group, and an amino group; and/or
  • n, n, and y are each independently selected from 0 or 1.
  • the polyaromatic ring compound includes at least one of the following compounds:
  • the metal oxide nanoparticles include zinc oxide nanoparticles and/or zinc tin oxide nanoparticles; and/or
  • the molar ratio of polyaromatic compound and metal oxide nanoparticles is (1-5):30.
  • the composite material is formed by the compound of the above-mentioned polyaromatic ring compound and the above-mentioned metal oxide nanoparticles.
  • a light-emitting diode provided by an embodiment of the present invention includes: an anode 1, a light-emitting layer 2, an electronic function layer 3 and a cathode 4.
  • the anode 1 and the cathode 4 are arranged oppositely, the light-emitting layer 2 is arranged between the anode 1 and the cathode 4, and the electronic function layer 3 is arranged between the light-emitting layer 2 and the cathode 4.
  • the material of the electronic functional layer 3 includes: the composite material obtained by the aforementioned preparation method or the aforementioned composite material.
  • the electronic functional layer is prepared by the above-mentioned preparation method, and has high brightness, long life, and excellent light-emitting performance.
  • the material of the electronic functional layer is the aforementioned composite material, specifically, the composite material is formed by a composite of polyaromatic ring compounds and metal oxide nanoparticles;
  • the molar ratio of polyaromatic compound and metal oxide nanoparticles is (1-5): 30;
  • the metal oxide nanoparticles include zinc oxide nanoparticles and/or zinc tin oxide nanoparticles
  • Polyaromatic compounds include at least one of the following compounds:
  • the electronic functional layer generally refers to an electron injection layer, an electron transport layer, and an electron blocking layer.
  • the electronic functional layer is an electron transport layer.
  • the thickness of the electronic functional layer is 10-180 nanometers.
  • the structure of the light emitting diode can refer to the conventional technology in the art.
  • the light emitting diode has a upright structure, and the anode is connected to the substrate as the bottom electrode; in other embodiments, the light emitting diode has an inverted structure, and the cathode is connected to the substrate. As the bottom electrode.
  • holes such as a hole injection layer, a hole transport layer, and a hole blocking layer may also be provided between the anode and the light-emitting layer. Functional layer.
  • the light emitting diode includes an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode, which are sequentially stacked, wherein the anode is connected to the substrate to form a bottom electrode, and the electron transport layer is prepared by the above method be made of.
  • the thickness of the bottom electrode is 20-200nm; the thickness of the hole injection layer is 20-200nm; the thickness of the hole transport layer is 30-180nm; the total thickness of the light-emitting layer is 30-180nm, and the thickness of the electron transport layer is 10 -180nm, the thickness of the cathode is 40-190nm.
  • the substrate may be a rigid substrate or a flexible substrate, including but not limited to glass, silicon wafer, and the like.
  • the anode may be a conductive metal oxide, including but not limited to zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), and the like.
  • the hole injection layer can be polythiophene, WoO 3, and the like.
  • the hole transport layer can be TFB, TPD, etc.
  • the material of the light-emitting layer may be group II-VI such as CdS, group III-V such as GaN, or group IV-VI such as SnS.
  • the cathode can be a metal or alloy, including but not limited to aluminum, silver, and the like.
  • magnetron sputtering chemical vapor deposition, evaporation, spin coating, inkjet printing and other methods can be used to sequentially form an anode, a hole injection layer, and a hole transport layer on the substrate.
  • Luminescent layer Luminescent layer, electron transport layer and cathode.
  • a method for manufacturing a QLED device includes:
  • An anode is formed on the substrate
  • a hole injection layer is formed on the anode
  • a hole transport layer is formed on the hole injection layer
  • a cathode layer is formed on the electron transport layer.
  • This embodiment provides a light-emitting diode, and its manufacturing method specifically includes the following steps:
  • An anode is formed on the substrate
  • Al electrode is vapor-deposited on the electron transport layer, and the QLED device is obtained by packaging with electronic glue.
  • This comparative example provides a light-emitting diode whose preparation method is basically the same as that of Example 1, except that the ZnO-ethanol solution is spin-coated on the light-emitting layer in step (5).
  • This embodiment provides a light-emitting diode, and its manufacturing method specifically includes the following steps:
  • An anode is formed on the substrate
  • Al electrode is vapor-deposited on the electron transport layer, and the QLED device is obtained by packaging with electronic glue.
  • This comparative example provides a light-emitting diode whose preparation method is basically the same as that of Example 2, except that the spin-coated on the light-emitting layer in step (5) is a ZnO-ethanol solution.
  • This embodiment provides a light-emitting diode, and its manufacturing method specifically includes the following steps:
  • An anode is formed on the substrate
  • PEDOT PSS is deposited on the anode to form a hole injection layer
  • Al electrode is vapor-deposited on the electron transport layer, and the QLED device is obtained by packaging with electronic glue.
  • This comparative example provides a light-emitting diode whose preparation method is basically the same as that of Example 3, with the difference that: in step (5), the ZnO-ethanol solution is spin-coated on the light-emitting layer.
  • This embodiment provides a light-emitting diode, and its manufacturing method specifically includes the following steps:
  • An anode is formed on the substrate
  • Al electrode is vapor-deposited on the electron transport layer, and the QLED device is obtained by packaging with electronic glue.
  • This comparative example provides a light-emitting diode whose preparation method is basically the same as that of Example 4, except that the spin-coated on the light-emitting layer in step (5) is a ZnO-ethanol solution.
  • This embodiment provides a light-emitting diode, and its preparation method is basically the same as that of Embodiment 1, except that the ZnO nanoparticles in step (5) are replaced with zinc tin oxide nanoparticles.
  • test indicators and test methods are as follows:
  • the ratio of the number of electron-hole pairs injected into the quantum dot into the number of emitted photons, in %, is an important parameter to measure the pros and cons of electroluminescent devices, which can be obtained by measuring with EQE optical testing equipment.
  • the specific calculation formula is as follows:
  • ⁇ e is the light output coupling efficiency
  • ⁇ r is the ratio of the number of recombined carriers to the number of injected carriers
  • ⁇ is the ratio of the number of excitons that generate photons to the total number of excitons
  • K R is the radiation process Rate
  • K NR is the non-radiation process rate.
  • Test conditions carried out at room temperature, with an air humidity of 30-60%.
  • QLED device life The time required for the device to reduce the brightness to a certain percentage of the maximum brightness under constant current or voltage driving. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this life is the measured life.
  • the device life test is usually carried out by accelerating the aging of the device with reference to the OLED device test at high brightness, and the extended exponential decay brightness decay fitting formula is used to fit the life under high brightness, such as: life under 1000nit Counted as T951000nit.
  • the specific calculation formula is as follows:
  • T95 L is the life under low brightness
  • T95 H is the measured life under high brightness
  • L H is the acceleration of the device to the highest brightness
  • L L is 1000 nit
  • A is the acceleration factor.
  • OLED the value is usually It is 1.6-2.
  • a value of 1.7 is obtained by measuring the lifetime of several groups of green QLED devices at rated brightness.
  • the life test system is used to carry out life test on the corresponding device, and the test conditions are: at room temperature, and the air humidity is 30-60%.
  • test results are shown in Table 1 below.
  • the results show that the EQE and lifetime of the light-emitting diodes provided in Examples 1-5 are higher than those of the corresponding comparative examples.
  • Example 2 2.1% 16.21h Comparative example 2 1.8% 14.76h Example 3 2.5% 10.73h Comparative example 3 2.1% 7.21h Example 4 2.4% 9.56h Comparative example 4 1.9% 7.10h Example 5 3.2% 30.27h To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To To

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Abstract

一种复合材料的制备方法，该制备方法包括：提供结构如通式（Ⅰ）所示的多芳环类化合物以及金属氧化物纳米颗粒，Ar1、Ar2、Ar3和Ar4选自芳环，X1、X2和X3选自能够与金属氧化物纳米颗粒结合的活性基团，R1、R2和R3各自独立地含有亚烷基、胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团，m、n和y各自独立地选自0或正整数；将多芳环类化合物和金属氧化物纳米颗粒分散在溶剂中，获得混合溶液；将混合溶液进行加热处理，获得复合材料。通过将多芳环类化合物和金属氧化物纳米颗粒混合加热处理，使得该多芳环类化合物通过活性基团配位连接金属氧化物纳米颗粒表面的金属原子，从而组装形成层状超晶格结构，促进金属氧化物纳米颗粒有序地排列成膜，改善了金属氧化物薄膜的成膜性能和结晶性能。

Description

复合材料、复合材料的制备方法和发光二极管
本申请要求于2020年6月9日提交的中国专利申请No.202010519784.4的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，具体涉及一种复合材料、复合材料的制备方法以及发光二极管。
背景技术
传统方法中，制备QLED器件常采用溶液法制备电子功能层，例如采用ZnO等金属氧化物纳米颗粒作为QLED的电子传输层(ETL)旋涂于量子点发光层上，这存在以下几点缺陷：1)为了保持量子点优异的光学稳定性，量子点表面配体呈非极性，与ZnO接触差，使得电子注入困难；2)由于现有QLED器件的电子迁移率远高于空穴迁移率，使得QD/ETL界面的电荷积累现象非常严重，对QLED器件的效率和寿命都产生了非常不利的影响；3)现有ZnO纳米粒子在旋涂成膜后的膜结构常表现为无序的松散结构，含有大量的各种缺陷，如微孔等，成膜性能差。
为解决上述技术问题，本申请实施例采用的技术方案是：
第一方面，提供了一种复合材料的制备方法，包括以下步骤：
提供结构如通式Ⅰ所示的多芳环类化合物以及金属氧化物纳米颗粒，Ar 1、Ar 2、Ar 3和Ar 4选自芳环，X 1、X 2和X 3选自能够与所述金属氧化物纳米颗粒结合的活性基团，R 1、R 2和R 3各自独立地含有亚烷基、胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团，m、n和y各自独立地选自0或正整数；
Figure PCTCN2020139300-appb-000001
将所述多芳环类化合物和所述金属氧化物纳米颗粒分散在溶剂中，获得混合溶液；
将所述混合溶液进行加热处理，获得所述复合材料。
第二方面，提供了一种复合材料，包括：多芳环类化合物以及金属氧化物纳米颗粒，所述多芳环类化合物连接所述金属氧化物纳米颗粒；
其中，所述多芳环类化合物的结构如通式Ⅰ所示，Ar 1、Ar 2、Ar 3和Ar 4选自芳环，X 1、 X 2和X 3选自能够与所述金属氧化物纳米颗粒结合的活性基团，R 1、R 2和R 3各自独立地含有亚烷基、胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团，m、n和y各自独立地选自0或正整数。
Figure PCTCN2020139300-appb-000002
第三方面，提供一种发光二极管，包括：
相对设置的阳极以及阴极；
设置在所述阳极和所述阴极之间的发光层；
设置在所述阴极和所述发光层之间的电子功能层；
其中，所述电子功能层的材料包括：前述制备方法制得的复合材料或上述复合材料。
本申请实施例提供的发光二极管，其电子功能层由上述制备方法制得，亮度高，寿命长，发光性能优异。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例或示范性技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1是本申请实施例提供的一种复合材料的制备方法的流程图；
图2是本申请实施例提供的制备方法制得的复合材料的微观结构简图；
图3是本申请实施例提供的发光二极管的结构简图。
本发明的实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本申请。
如图1所述，本发明实施例提供的一种复合材料的制备方法，包括以下步骤：
S01、提供结构如通式Ⅰ所示的多芳环类化合物以及金属氧化物纳米颗粒，Ar 1、Ar 2、Ar 3和Ar 4选自芳环，X 1、X 2和X 3选自能够与金属氧化物纳米颗粒结合的活性基团，R 1、R 2和R 3各自独立地含有亚烷基、胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团，m、n和y各自独立地选自0或正整数；
Figure PCTCN2020139300-appb-000003
S02、将多芳环类化合物和金属氧化物纳米颗粒分散在溶剂中，获得混合溶液；
S03、将混合溶液进行加热处理，获得复合材料。
本申请实施例提供的复合材料的制备方法，采用结构如通式Ⅰ所示的多芳环类化合物作为掺杂材料，将多芳环类化合物和金属氧化物纳米颗粒进行混合加热处理，活性基团通过与金属氧化物纳米颗粒表面的金属原子配位连接，使得多芳环类化合物与金属氧化物纳米颗粒交织形成三维网络结构，同时，由于多芳环类化合物具有平面三角结构，使得金属氧化物纳米颗粒在成膜时有序排列，形成层状超晶格结构，未连接多芳环类化合物的氧化锌纳米颗粒则填充在结构微孔中，从而有效改善金属氧化物薄膜的膜层性能和结晶性能。另一方面，将上述多芳环类化合物掺杂金属氧化物纳米颗粒，多芳环类化合物通过活性基团有效占据金属氧化物纳米颗粒表面的氧空位，一定程度上降低了氧空位的形成能，促进金属氧化物纳米颗粒表面氧原子脱离形成空位的概率，提高了氧空位浓度，进而有效降低了复合材料的电阻，有利于提升材料的电阻传输性能。又一方面，在复合材料中掺杂多芳环类化合物，调节了混合溶液的极性，提高了金属氧化物纳米颗粒与量子点发光层间的界面接触性能，有利于进一步提高材料的表面性能，增强电子注入。通过上述制备方法制得的复合材料，材料结构有序，致密度高，表面缺陷少，有利于提高电子在界面的传导和复合能力，增强电子注入，减少QD/ETL界面的电荷积累，有效平衡器件的空穴和电子注入速率，进而从整体上提高发光器件的亮度和寿命。
具体地，步骤S01中，多芳环类化合物的分子结构如通式Ⅰ所示：
Figure PCTCN2020139300-appb-000004
其中，Ar 1、Ar 2、Ar 3和Ar 4选自芳环。在本申请说明书中，“芳环”是指一类具有共轭结构的平面环体系，包括苯环和稠环等，稠环包括但不限于萘环、蒽环、菲环等，同时，苯环可选为取代苯环或非取代苯环。一些实施例中Ar 1、Ar 2、Ar 3和Ar 4选自苯环。
X 1、X 2和X 3选自能够与金属氧化物纳米颗粒结合的活性基团，通过该活性基团与金属氧化物纳米颗粒表面的金属原子配位连接，多个金属氧化物纳米颗粒和多个多芳环类化合物之间相互交织形成具有层状超晶格结构的复合材料，促进金属氧化物纳米颗粒在成膜 时有序排列，改善金属氧化物薄膜的膜层性能和结晶性能。一些实施例中，X 1、X 2和X 3各自独立地选自羟基、羧基、巯基和氨基中的至少一种。
R 1、R 2和R 3各自独立地含有亚烷基、胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团，m、n和y各自独立地选自0或正整数。
在本申请说明书中，“亚烷基”为一类仅含有碳、氢两种原子的有机基团，可为直链状、支链状或环状，包括但不限于亚甲基、亚乙基、亚异丙基、亚正戊基等。“胺基”为一类含N有机基团，至多连接有一个氢原子，包括但不限于-NH-、-N(CH 3)-、-N(CH 2CH 3)-等。“烯基”为至少含有一个碳碳双键的烃基，包括但不限于乙烯基、丙烯基、烯丙基等。“炔基”为至少含有一个碳碳三键的烃基，包括但不限于乙炔基、丙炔基等。
一些实施例中，R 1、R 2和R 3各自独立地选自胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团。使得多芳环类化合物的中心形成有共轭大π键，具有超共轭效应，有利于提高复合材料的电子传导性能。同时，该多芳环类化合物具有高刚性平面结构，一定程度上提高了具有层状超晶格结构的复合材料的晶度，从而进一步改善金属氧化物薄膜的膜层性能和结晶性能。而且，该多芳环类化合物具有结构稳定的平面三角结构，多芳环类化合物和金属氧化物纳米颗粒组装形成层状超晶格结构，各向同性，在空间各方向上具有相同的化学势能，促进金属氧化物纳米颗粒与各方向上的活性基团有序结合，从而形成晶体结构稳定、性质稳定的复合材料。
m、n和y各自独立地选自0或正整数。当m、n和y均选为0时，Ar 1、Ar 2和Ar 3与Ar 4之间直接以碳碳单键相连；当m、n和y不为0时，Ar 1、Ar 2和Ar 3与Ar 4之间通过R 1、R 2和R 3等连接基团相连。其中，m、n和y选为正整数时，该正整数优选为1-3，例如，m、n和y可均为1；或者，m为2，n和y均为1；或者，m为1，n为2，y为3。
一些实施例中，m、n和y各自独立地选自0或1。例如，m、n和y均选为0或1；或者，m为0，n和y均选为1；或者，m和y均选为1，n为0。如此，使得多芳环类化合物具有一定的共轭效应，以保证复合材料具有一定的电子传导性能，同时，确保多芳环类化合物与金属氧化物纳米颗粒结合后形成层状超晶格结构。
在上述实施例的基础上，多芳环类化合物选自以下任意一种或多种化合物：
Figure PCTCN2020139300-appb-000005
Figure PCTCN2020139300-appb-000006
在进一步实施例中，多芳环类化合物选自以下至少一种化合物：
Figure PCTCN2020139300-appb-000007
Figure PCTCN2020139300-appb-000008
上述列举的几种多芳环类化合物均具有高度对称的平面结构，其电荷中心都在中间的苯环上，具有强共轭效应，在与金属氧化物纳米颗粒配位连接后形成的超共轭效应范围足以将不同分子的电荷中心连接起来，使得电子可以在不同的电荷中心上跳跃，大大增强了复合材料的载流子传输性能；同时，上述几种多芳环类化合物均具有三角结构，稳定性优异，无论外界的电场势或者化学势从哪个方向进攻，都能保证一致的稳定性，没有易于进攻的位点。
在具体实施例中，多芳环类化合物选为以下任一种化合物：
Figure PCTCN2020139300-appb-000009
金属氧化物纳米颗粒作为复合材料的功能材料，选为n型半导体纳米颗粒，以应用于制备发光二极管中的电子功能层。优选地，金属氧化物纳米颗粒包括氧化锌纳米颗粒和/或氧化铟锡纳米颗粒。一些实施例中，金属氧化物纳米颗粒选为氧化锌纳米颗粒，氧化锌纳 米颗粒的电子迁移率高，且其带隙较宽，导带和价带位置在发光二极管结构中较为合适。进一步实施例中，氧化锌纳米颗粒的尺寸为4-5nm，该尺寸范围内的氧化锌纳米颗粒在溶剂中具有良好的分撒性能，且与上述选择的几种多芳环类化合物配体尺寸(约2nm)匹配，有利于提高复合材料的生产效率。
步骤S02中，将多芳环类化合物和金属氧化物纳米颗粒分散在溶剂中，以使得多芳环类化合物和金属氧化物纳米颗粒在溶液中充分混合接触。
一些实施例中，将多芳环类化合物和金属氧化物纳米颗粒分散在溶剂中的步骤包括：
S021、将金属氧化物纳米颗粒溶解在溶剂中，获得第一溶液；
S022、将多芳环类化合物溶解溶剂中，获得第二溶液；
S023、将第一溶液和第二溶液进行混合。
通过分别将金属氧化物纳米颗粒和多芳环类化合物先溶解在溶剂中，再进行混合，有利于促进多芳环类化合物与金属氧化物纳米颗粒充分混合均匀，获得澄清的混合溶液。
将金属氧化物纳米颗粒溶解在溶剂中的具体操作可参考本领域常规技术，例如采用机械搅拌、超声等方法，使得金属氧化物纳米颗粒溶解在溶剂中，形成澄清的金属氧化物溶液即可。将多芳环类化合物溶解在溶剂中的步骤同理。
溶剂作为制备上述复合材料的反应介质，可选为本领域常见的有机溶剂，包括但不限于烷烃、烯烃、醇、醚和芳香族化合物等，不影响金属氧化物纳米颗粒与多芳环类化合物的组装、且易于挥发即可。优选地，溶剂选为极性或中等极性溶剂。现有发光二极管发光层的量子点材料主要为油相量子点，制备发光二极管时，采用极性或中等极性溶剂溶解多芳环类化合物和金属氧化物纳米颗粒形成的混合溶液与量子点极性正交，可防止溶剂侵蚀发光层导致发光层膜层结构损坏。在一些实施例中，溶剂选自乙醇、丙醇、丁醇、戊醇中的至少一种。
将多芳环类化合物和金属氧化物纳米颗粒分散在溶剂中的步骤中，通过调节多芳环类化合物和金属氧化物纳米颗粒的相对用量来控制制得的复合材料的膜层性能。
一些实施例中，混合溶液中的多芳环类化合物和金属氧化物纳米颗粒的摩尔比为(1-5):30，将多芳环类化合物和金属氧化物纳米颗粒的用量控制在上述摩尔比例范围内，可使得复合材料具有优异的膜层性能。以氧化锌纳米颗粒和1,3,5-三(4-羧基苯基)苯为示例，如图2所示，1,3,5-三(4-羧基苯基)苯通过其末端的羧基配位连接部分氧化锌纳米颗粒而形成相互交联的网络结构，剩余氧化锌纳米颗粒则填充在结构微孔中，从而减小氧化锌薄膜的微孔缺陷，提高氧化锌薄膜的结晶度和致密度。当多芳环类化合物和金属氧化物纳米颗粒的摩尔比小于1:30，多芳环类化合物掺杂量过少，无法起到改善材料膜层性能和结晶性能的作 用；当多芳环类化合物和金属氧化物纳米颗粒的摩尔比大于5:30，多芳环类化合物掺杂量过多，容易导致材料膜微孔缺陷增加。
步骤S03中，将混合溶液进行加热处理的过程中，使得多芳环类化合物和金属氧化物纳米颗粒组装形成类似MOFs的层状超晶格结构以及使得溶剂挥发，促进金属氧化物纳米颗粒有序排列成膜，从而获得有机-无机型复合型材料。
作为一种实施方式，将混合溶液进行加热处理的步骤中，加热温度为80℃-140℃，加热时间为30分钟-2小时。当温度小于80℃时，达不到复合材料结晶的最低活化能要求；当温度大于140℃时，容易影响金属氧化物纳米颗粒的结构稳定性。同时，在该温度范围下，加热时间小于40分钟时，不能完成复合材料的结晶过程；加热时间大于2小时时，对金属氧化物纳米颗粒的结构会产生不利影响。
作为一种实施方式，将混合溶液进行加热处理的步骤中，将混合溶液沉积在基板上，然后进行加热处理。基板作为沉积混合溶液的载体，以促进复合材料成膜。其中，基板的种类和结构可参考本领域的常规技术，可选为玻璃板，也可选为表面形成有功能膜层的玻璃板。
在具体实施例中，将混合溶液进行加热处理的步骤中，将混合溶液沉积在基板上，80℃-140℃下加热30分钟-2小时。
综上，在上述优选的原材料、优化的工艺条件以及参数的综合作用下，使得最终制得的复合材料具有优异的膜层性能和结晶性能，有效解决现有金属氧化物纳米粒子在旋涂成膜后的膜结构常表现为无序的松散结构而导致电子传输层膜层质量差的问题，并有效提高电子在界面的传导和复合能力，增强电子注入，减少QD/ETL界面的电荷积累，有效平衡器件的空穴和电子注入速率，进而从整体上提高发光器件的亮度和寿命。
在上述技术方案的基础上，本发明实施例还提供了一种复合材料和发光二极管。
相应地，一种复合材料，包括：多芳环类化合物以及金属氧化物纳米颗粒，所述多芳环类化合物连接所述金属氧化物纳米颗粒；
其中，所述多芳环类化合物的结构如通式Ⅰ所示，Ar 1、Ar 2、Ar 3和Ar 4选自芳环，X 1、X 2和X 3选自能够与所述金属氧化物纳米颗粒结合的活性基团，R 1、R 2和R 3各自独立地含有亚烷基、胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团，m、n和y各自独立地选自0或正整数。
Figure PCTCN2020139300-appb-000010
本发明实施例提供的复合材料，由上述制备方法制得，包括相互交联的多芳环类化合物和金属氧化物纳米颗粒，结构有序，致密度高，表面缺陷少，具有良好的表面性能，有利于提高发光器件的亮度和寿命。
通过本发明实施例提供的上述制备方法制得的复合材料，优选地以薄膜形式存在，结构有序，致密度高，表面缺陷少，材料表面性能优异。
一些实施例中，Ar 1、Ar 2、Ar 3和Ar 4选自苯环；和/或
X 1、X 2和X 3各自独立地选自羟基、羧基、巯基和氨基中的至少一种；和/或
R 1、R 2和R 3各自独立地选自胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团；和/或
m、n和y各自独立地选自0或1。
进一步实施例中，多芳环类化合物包括以下至少一种化合物：
Figure PCTCN2020139300-appb-000011
Figure PCTCN2020139300-appb-000012
一些实施例中，金属氧化物纳米颗粒包括氧化锌纳米颗粒和/或氧化锌锡纳米颗粒；和/或
多芳环类化合物和金属氧化物纳米颗粒的摩尔比为(1-5):30。
具体实施例中，复合材料由上述多芳环类化合物和上述金属氧化物纳米颗粒复合形成。
相应地，如图3所示，本发明实施例提供的一种发光二极管，包括：阳极1、发光层2、电子功能层3和阴极4。其中，阳极1和阴极4相对设置，发光层2设置在阳极1和阴极4之间，电子功能层3设置在发光层2和阴极4之间。此外，电子功能层3的材料包括：前述制备方法制得的复合材料或上述复合材料。
本发明实施例提供的发光二极管，其电子功能层由上述制备方法制得，亮度高，寿命长，发光性能优异。
一些实施例中，电子功能层的材料为上述复合材料，具体地，复合材料由多芳环类化合物和金属氧化物纳米颗粒复合形成；
多芳环类化合物和金属氧化物纳米颗粒的摩尔比为(1-5):30；
金属氧化物纳米颗粒包括氧化锌纳米颗粒和/或氧化锌锡纳米颗粒；
多芳环类化合物包括以下至少一种化合物：
Figure PCTCN2020139300-appb-000013
电子功能层泛指电子注入层、电子传输层和电子阻挡层，一些实施例中，电子功能层为电子传输层。具体实施例中，电子功能层的厚度为10-180纳米。
发光二极管的结构可参考本领域常规技术，在一些实施例中，发光二极管为正置型结构，阳极连接衬底作为底电极；在其他的实施例中，发光二极管为倒置型结构，阴极连接 衬底作为底电极。进一步地，除了上述阴极、阳极、电子功能层和发光层等基本功能膜层之外，在阳极和发光层之间还可以设置例如空穴注入层、空穴传输层和空子阻挡层等空穴功能层。
一些实施例中，发光二极管包括依次层叠设置的阳极、空穴注入层、空穴传输层、发光层、电子传输层和阴极，其中，阳极连接衬底形成底电极，电子传输层由上述制备方法制得。
其中，底电极的厚度为20-200nm；空穴注入层的厚度为20-200nm；空穴传输层的厚度为30-180nm；发光层的总厚度为30-180nm，电子传输层的厚度为10-180nm，阴极的厚度为40-190nm。
衬底可选为钢性衬底或柔性衬底，包括但不限于玻璃、硅晶片等。
阳极可选为导电金属氧化物，包括但不限于氧化锌、氧化铟、氧化锡、氧化铟锡(ITO)等。
空穴注入层可选为聚噻吩、WoO 3等。
空穴传输层可选为TFB、TPD等。
发光层材料可选为诸如CdS等的II-VI族、诸如GaN等的III-V族或诸如SnS等IV-VI族。
阴极可选为金属或合金，包括但不限于铝、银等。
制备上述发光二极管时，可采用磁控溅射法、化学气相沉积法、蒸镀法、旋涂法、喷墨打印法等方法依次在衬底上形成阳极、空穴注入层、空穴传输层、发光层、电子传输层和阴极。
作为一种实施方式，一种QLED器件的制备方法，包括：
(1)在衬底上形成阳极；
(2)在阳极上形成空穴注入层；
(3)在空穴注入层上形成空穴传输层；
(4)在空穴传输层上沉积发光层；
(5)在发光层上沉积电子传输层；
(6)在电子传输层上形成阴极层。
为了说明本申请所提供的技术方案，以下结合具体实施例进行详细说明。
实施例1
本实施例提供了一种发光二极管，其制备方法具体包括以下步骤：
(1)在衬底上形成阳极；
(2)在阳极上旋涂PEDOT：PSS，形成空穴注入层；
(3)在空穴注入层上旋涂TFB，以3000r/min旋涂30s后，在150℃下加热30min，形成空穴传输层；
(4)将CdZnSe/ZnSe量子点旋涂在空穴传输层上，以3000r/min旋涂30s后退火处理，形成发光层；
(5)室温下，按照1,3,5-三(4-羧基苯基)苯与ZnO纳米颗粒的摩尔比为1:30的比例，向ZnO-乙醇溶液中加入1,3,5-三(4-羧基苯基)苯-乙醇溶液，溶解后获得澄清的混合溶液；将该混合溶液旋涂在发光层上，以3000r/min旋涂30s后，在150℃下加热30min，形成电子传输层；
(6)在电子传输层上蒸镀Al电极，采用电子胶封装得到QLED器件。
其中，1,3,5-三(4-羧基苯基)苯的分子结构为：
Figure PCTCN2020139300-appb-000014
对比例1
本对比例提供了一种发光二极管，其制备方法与实施例1基本相同，区别在于：步骤(5)中旋涂在发光层上的为ZnO-乙醇溶液。
实施例2
本实施例提供了一种发光二极管，其制备方法具体包括以下步骤：
(1)在衬底上形成阳极；
(2)在阳极上喷涂PEDOT：PSS，形成空穴注入层；
(3)在空穴注入层上喷涂TFB，在150℃下加热30min，形成空穴传输层；
(4)将CdZnSe/ZnSe/ZnS量子点喷涂在空穴传输层上，形成发光层；
(5)室温下，按照1,3,5-三甲基-2,4,6-三(4-羧基苯基)苯与ZnO纳米颗粒的摩尔比为2:30的比例，向ZnO-乙醇溶液中加入1,3,5-三甲基-2,4,6-三(4-羧基苯基)苯-乙醇溶液，溶解后获得澄清的混合溶液；将该混合溶液喷涂在发光层上后，在80℃下加热30min，形成电子传输层；
(6)在电子传输层上蒸镀Al电极，采用电子胶封装得到QLED器件。
其中，1,3,5-三甲基-2,4,6-三(4-羧基苯基)苯的分子结构为：
Figure PCTCN2020139300-appb-000015
对比例2
本对比例提供了一种发光二极管，其制备方法与实施例2基本相同，区别在于：步骤(5)中旋涂在发光层上的为ZnO-乙醇溶液。
实施例3
本实施例提供了一种发光二极管，其制备方法具体包括以下步骤：
(1)在衬底上形成阳极；
(2)在阳极上沉积PEDOT：PSS，形成空穴注入层；
(3)在空穴注入层上沉积TFB，在150℃下加热30min，形成空穴传输层；
(4)将CdZnSe/ZnSe/CdZnS量子点沉积在空穴传输层上，退火处理，形成发光层；
(5)室温下，按照1,3,5-三(4-羧基苯基乙炔基)苯与ZnO纳米颗粒的摩尔比为1.5:30的比例，向ZnO-乙醇溶液中加入1,3,5-三(4-羧基苯基乙炔基)苯-乙醇溶液，溶解后获得澄清的混合溶液；将该混合溶液沉积在发光层上，在80℃下加热30min，形成电子传输层；
(6)在电子传输层上蒸镀Al电极，采用电子胶封装得到QLED器件。
其中，1,3,5-三(4-羧基苯基乙炔基)苯的分子结构为：
Figure PCTCN2020139300-appb-000016
对比例3
本对比例提供了一种发光二极管，其制备方法与实施例3基本相同，区别在于：步骤(5)中旋涂在发光层上的为ZnO-乙醇溶液。
实施例4
本实施例提供了一种发光二极管，其制备方法具体包括以下步骤：
(1)在衬底上形成阳极；
(2)在阳极上旋涂PEDOT：PSS，形成空穴注入层；
(3)在空穴注入层上旋涂TFB，以3000r/min旋涂30s后，在150℃下加热30min，形成空穴传输层；
(4)将CdZnSeS/ZnS量子点旋涂在空穴传输层上，以4000r/min旋涂30s后退火处理，形成发光层；
(5)室温下，按照1,3,5-三(4'-羧基[1,1'-联苯]-4-基)苯与ZnO纳米颗粒的摩尔比为3:30的比例，向ZnO-乙醇溶液中加入1,3,5-三(4'-羧基[1,1'-联苯]-4-基)苯-乙醇溶液，溶解后获得澄清的混合溶液；将该混合溶液旋涂在发光层上，以3000r/min旋涂30s后，在80℃下加热30min，形成电子传输层；
(6)在电子传输层上蒸镀Al电极，采用电子胶封装得到QLED器件。
其中，1,3,5-三(4'-羧基[1,1'-联苯]-4-基)苯的分子结构为：
Figure PCTCN2020139300-appb-000017
对比例4
本对比例提供了一种发光二极管，其制备方法与实施例4基本相同，区别在于：步骤(5)中旋涂在发光层上的为ZnO-乙醇溶液。
实施例5
本实施例提供了一种发光二极管，其制备方法与实施例1基本相同，区别在于：步骤(5)中的ZnO纳米颗粒替换为氧化锌锡纳米颗粒。
对实施例1-5和对比例1-4制备的发光二极管进行性能测试，测试指标和测试方法如下：
(1)外量子效率(EQE)
注入到量子点中的电子-空穴对数转化为出射的光子数的比值，单位是％，是衡量电致发光器件优劣的一个重要参数，采用EQE光学测试仪器测定即可得到。具体计算公式如下：
Figure PCTCN2020139300-appb-000018
式中，η e为光输出耦合效率，η r为复合的载流子数与注入载流子数的比值，χ为产生光子的激子数与总激子数的比值，K R为辐射过程速率，K NR为非辐射过程速率。
测试条件：在室温下进行，空气湿度为30～60％。
(2)QLED器件寿命：器件在恒定电流或电压驱动下，亮度减少至最高亮度的一定比例时所需的时间，亮度下降至最高亮度的95％的时间定义为T95，该寿命为实测寿命。为缩短测试周期，器件寿命测试通常是参考OLED器件测试在高亮度下通过加速器件老化进行，并通过延伸型指数衰减亮度衰减拟合公式拟合得到高亮度下的寿命，比如：1000nit下的寿命计为T951000nit。具体计算公式如下：
Figure PCTCN2020139300-appb-000019
式中，T95 L为低亮度下的寿命，T95 H为高亮度下的实测寿命，L H为器件加速至最高亮度，L L为1000nit，A为加速因子，对OLED而言，该取值通常为1.6-2，本实验通过测得若干组绿色QLED器件在额定亮度下的寿命得出A值为1.7。
采用寿命测试系统对相应器件进行寿命测试，测试条件：在室温下进行，空气湿度为30～60％。
测试结果如下表1所示，结果显示，实施例1-5提供的发光二极管的EQE和寿命均高于与之对应的对比例。
表1
  EQE max T95 1000nit   EQE max T95 1000nit
实施例1 2.0％ 18.90h 对比例1 1.2％ 10.32h
实施例2 2.1％ 16.21h 对比例2 1.8％ 14.76h
实施例3 2.5％ 10.73h 对比例3 2.1％ 7.21h
实施例4 2.4％ 9.56h 对比例4 1.9％ 7.10h
实施例5 3.2％ 30.27h      
以上仅为本申请的可选实施例而已，并不用于限制本申请。对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (20)

  1. 一种复合材料的制备方法，其特征在于，包括以下步骤：
    提供结构如通式Ⅰ所示的多芳环类化合物以及金属氧化物纳米颗粒，Ar 1、Ar 2、Ar 3和Ar 4选自芳环，X 1、X 2和X 3选自能够与所述金属氧化物纳米颗粒结合的活性基团，R 1、R 2和R 3各自独立地含有亚烷基、胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团，m、n和y各自独立地选自0或正整数；
    Figure PCTCN2020139300-appb-100001
    将所述多芳环类化合物和所述金属氧化物纳米颗粒分散在溶剂中，获得混合溶液；
    将所述混合溶液进行加热处理，获得所述复合材料。
  2. 根据权利要求1所述的制备方法，其特征在于，所述混合溶液中的所述多芳环类化合物和所述金属氧化物纳米颗粒的摩尔比为(1-5):30。
  3. 根据权利要求1所述的制备方法，其特征在于，将所述混合溶液进行加热处理的步骤中，加热温度为80℃-140℃，加热时间为30分钟-2小时。
  4. 根据权利要求1所述的制备方法，其特征在于，将所述混合溶液进行加热处理的步骤中，将所述混合溶液沉积在基板上，然后进行加热处理。
  5. 根据权利要求1所述的制备方法，其特征在于，所述m、所述n和所述y各自独立地选自0或1；或
    所述R 1、所述R 2和所述R 3各自独立地选自胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团。
  6. 根据权利要求1所述的制备方法，其特征在于，所述m、所述n和所述y各自独立地选自0或1；
    所述R 1、所述R 2和所述R 3各自独立地选自胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团。
  7. 根据权利要求6所述的制备方法，其特征在于，所述多芳环类化合物选自以下任意一种或多种化合物：
    Figure PCTCN2020139300-appb-100002
  8. 根据权利要求7所述的制备方法，其特征在于，所述Ar 1、所述Ar 2、所述Ar 3和所述Ar 4选自苯环；或
    所述X 1、所述X 2和所述X 3各自独立地选自羟基、羧基、巯基和氨基中的至少一种。
  9. 根据权利要求7所述的制备方法，其特征在于，所述Ar 1、所述Ar 2、所述Ar 3和所述Ar 4选自苯环；
    所述X 1、所述X 2和所述X 3各自独立地选自羟基、羧基、巯基和氨基中的至少一种。
  10. 根据权利要求9所述的制备方法，其特征在于，所述多芳环类化合物选自以下至少一种化合物：
    Figure PCTCN2020139300-appb-100003
    Figure PCTCN2020139300-appb-100004
  11. 根据权利要求1所述的制备方法，其特征在于，所述金属氧化物纳米颗粒包括氧化锌纳米颗粒和/或氧化锌锡纳米颗粒。
  12. 根据权利要求1所述的制备方法，其特征在于，所述溶剂选自乙醇、丙醇、丁醇和戊醇中的至少一种。
  13. 根据权利要求1所述的制备方法，其特征在于，将所述多芳环类化合物和所述金属氧化物纳米颗粒分散在溶剂中的步骤包括：
    将所述金属氧化物纳米颗粒溶解在所述溶剂中，获得第一溶液；
    将所述多芳环类化合物溶解所述溶剂中，获得第二溶液；
    将所述第一溶液和所述第二溶液进行混合。
  14. 一种复合材料，其特征在于，包括：多芳环类化合物以及金属氧化物纳米颗粒，所述多芳环类化合物连接所述金属氧化物纳米颗粒；
    其中，所述多芳环类化合物的结构如通式Ⅰ所示，Ar 1、Ar 2、Ar 3和Ar 4选自芳环，X 1、X 2和X 3选自能够与所述金属氧化物纳米颗粒结合的活性基团，R 1、R 2和R 3各自独立地含有亚烷基、胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团，m、n和y各自独立地选自0或正整数。
    Figure PCTCN2020139300-appb-100005
  15. 根据权利要求14所述的复合材料，其特征在于，所述Ar 1、所述Ar 2、所述Ar 3和所述Ar 4选自苯环；和/或
    所述X 1、所述X 2和所述X 3各自独立地选自羟基、羧基、巯基和氨基中的至少一种；和/或
    所述R 1、所述R 2和所述R 3各自独立地选自胺基、-N＝N-、烯基、炔基和苯基中的至少一种基团；和/或
    所述m、所述n和所述y各自独立地选自0或1。
  16. 根据权利要求15所述的复合材料，其特征在于，所述多芳环类化合物包括以下至少一种化合物：
    Figure PCTCN2020139300-appb-100006
    Figure PCTCN2020139300-appb-100007
  17. 根据权利要求14所述的复合材料，其特征在于，所述金属氧化物纳米颗粒包括氧化锌纳米颗粒和/或氧化锌锡纳米颗粒；和/或
    所述多芳环类化合物和所述金属氧化物纳米颗粒的摩尔比为(1-5):30。
  18. 根据权利要求14所述的复合材料，其特征在于，所述复合材料由所述多芳环类化合物和所述金属氧化物纳米颗粒复合形成。
  19. 一种发光二极管，包括：
    相对设置的阳极以及阴极；
    设置在所述阳极和所述阴极之间的发光层；
    设置在所述阴极和所述发光层之间的电子功能层；
    其中，所述电子功能层的材料包括：权利要求1所述的制备方法制得的复合材料或权利要求14所述的复合材料。
  20. 根据权利要求19所述的发光二极管，其特征在于，所述电子功能层为电子传输层；和/或
    所述电子功能层的厚度为10-180纳米。
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