WO2021248548A1 - 微型发光二极管显示面板及其制作方法、显示装置 - Google Patents

微型发光二极管显示面板及其制作方法、显示装置 Download PDF

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Publication number
WO2021248548A1
WO2021248548A1 PCT/CN2020/097149 CN2020097149W WO2021248548A1 WO 2021248548 A1 WO2021248548 A1 WO 2021248548A1 CN 2020097149 W CN2020097149 W CN 2020097149W WO 2021248548 A1 WO2021248548 A1 WO 2021248548A1
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Prior art keywords
touch
electrodes
electrode
metal layer
connection
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PCT/CN2020/097149
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English (en)
French (fr)
Inventor
胡丽
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武汉华星光电技术有限公司
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Priority to US16/975,724 priority Critical patent/US20230130461A1/en
Publication of WO2021248548A1 publication Critical patent/WO2021248548A1/zh

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Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • This application relates to the field of display panel technology, and in particular to a miniature light-emitting diode display panel, a manufacturing method thereof, and a display device.
  • Micro-LED display panels have the advantages of long life, high brightness, good luminous efficiency, and low power consumption. With the rapid development of display technology, touch technology has become an indispensable part of display products. However, the touch components and display components of the current micro LED display panels are independent of each other and stacked, resulting in a large thickness of the touch display device of the micro LED display panel, which in turn reduces the application of the micro LED display panel. Scope.
  • the embodiment of the present application provides a micro light emitting diode display panel with an in-cell touch structure, which can reduce the thickness of the micro light emitting diode display panel, thereby increasing the application range of the micro light emitting diode display.
  • a miniature light-emitting diode display panel including:
  • the array substrate includes a first metal layer, the first metal layer includes a plurality of first connection electrodes and a plurality of second connection electrodes, and each of the first connection electrodes is electrically connected to the corresponding second connection electrode To the corresponding miniature light-emitting diode;
  • At least one of the plurality of first connection electrodes and the plurality of second connection electrodes is a multiplexing electrode, and in the display stage, each of the multiplexing electrode drives the corresponding micro light emitting diode to emit light;
  • each of the multiplexed electrodes is multiplexed as a touch electrode.
  • a method for manufacturing a miniature light-emitting diode display panel includes:
  • the third metal layer including the source electrode and the drain electrode of the thin film transistor
  • the second metal layer including a plurality of touch connection electrodes and a plurality of touch traces;
  • a first insulating layer is formed on the second metal layer; the first insulating layer includes a second via hole and a third via hole, the orthographic projection of the second via hole on the substrate and the first via hole The orthographic projections on the substrate at least partially overlap;
  • a first metal layer is formed on the first insulating layer.
  • the first metal layer includes a plurality of first connection electrodes and a plurality of second connection electrodes.
  • the second via is connected to the source or drain of the thin film transistor, at least one of the plurality of first connection electrodes and the plurality of second connection electrodes is a multiplexing electrode, and each multiplexing
  • the electrodes drive the corresponding miniature light-emitting diodes to emit light in the display stage, each of the multiplexed electrodes is multiplexed as a touch electrode in the touch stage, and each of the touch electrodes includes a plurality of the multiplexed electrodes connected to each other ,
  • Each of the touch control connection electrodes is connected between two corresponding multiplexing electrodes, and the touch control trace is connected to the touch control connection electrode of the corresponding touch control electrode;
  • the micro light-emitting diodes are installed so that each of the first connection electrodes and the corresponding second connection electrodes are electrically connected to the corresponding micro light-emitting diodes.
  • This application also proposes a display device, including a miniature light-emitting diode display panel, and the miniature light-emitting diode display panel includes:
  • the array substrate includes a first metal layer, the first metal layer includes a plurality of first connection electrodes and a plurality of second connection electrodes, and each of the first connection electrodes is electrically connected to the corresponding second connection electrode To the corresponding miniature light-emitting diode;
  • At least one of the plurality of first connection electrodes and the plurality of second connection electrodes is a multiplexing electrode, and in the display stage, each of the multiplexing electrode drives the corresponding micro light emitting diode to emit light;
  • each of the multiplexed electrodes is multiplexed as a touch electrode.
  • the beneficial effects of the present application are: by integrating the touch function inside the micro light emitting diode display panel, a micro light emitting diode display panel with an in-cell touch structure is proposed, which does not need to be laminated with touch components, which can reduce the micro
  • the thickness and cost of the light-emitting diode display panel further increase the application range of the miniature light-emitting diode display panel.
  • FIG. 1 is a schematic cross-sectional structure diagram of a micro light emitting diode display panel provided by an embodiment of the application;
  • FIG. 2 is a schematic diagram of a cross-sectional structure of a micro light emitting diode display panel provided by an embodiment of the application;
  • FIG. 3 is a schematic cross-sectional structure diagram of a micro light emitting diode display panel provided by an embodiment of the application;
  • FIG. 4 is a schematic diagram of a top view structure of a touch electrode of a micro light emitting diode display panel provided by an embodiment of the application;
  • FIG. 5 is a schematic diagram of a top view structure of a touch electrode of a micro light emitting diode display panel provided by an embodiment of the application;
  • FIG. 6 is a schematic top view of the structure of touch electrodes and touch traces of a micro light emitting diode display panel provided by an embodiment of the application;
  • FIG. 7 is a schematic diagram of a display device provided by an embodiment of the application.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, "a plurality of" means two or more than two, unless otherwise specifically defined.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be mechanically connected, it can be electrical connection or it can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relation.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be mechanically connected, it can be electrical connection or it can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relation.
  • the "above” or “below” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or merely indicating that the level of the first feature is higher than that of the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • an embodiment of the present application provides a micro light emitting diode display panel 1000, including: a plurality of micro light emitting diodes 111; the array substrate 10 includes a first metal layer 21, the first metal layer 21 includes A plurality of first connection electrodes 211 and a plurality of second connection electrodes 212, each first connection electrode 211 and a corresponding second connection electrode 212 are electrically connected to the corresponding micro light emitting diode 111; wherein, the plurality of first connection electrodes At least one of 211 and the plurality of second connecting electrodes 212 is a multiplexing electrode.
  • each multiplexing electrode drives the corresponding micro light-emitting diode 111 to emit light; wherein, in the touch stage, each multiplexing electrode is multiplexed It is the touch electrode.
  • the beneficial effect of the present application is that by integrating the touch function inside the micro light emitting diode display panel, there is no need to stack additional touch components, which can reduce the thickness and cost of the micro light emitting diode display panel, thereby increasing the micro light emitting diode display The scope of application of the panel.
  • the array substrate 10 includes a thin film transistor 100, and the thin film transistor 100 includes an active layer 13, a gate insulating layer 14, a gate electrode 15, an interlayer insulating layer 16, a source electrode 171 (or source electrode 172), and a drain electrode 172 ( Or the drain electrode 171), the first connecting electrode 211 is electrically connected to the source electrode 171 (or source electrode 172) or the drain electrode 172 (or drain electrode 171) of the thin film transistor 100.
  • the micro light emitting diode 111 includes a first mounting electrode 1111, a second mounting electrode 1112, and a micro light emitting diode body 1113.
  • the first mounting electrode 1111 can be the anode or cathode of the micro light emitting diode 111
  • the second mounting electrode 1112 can be the micro light emitting diode 111
  • One of the first connecting electrode 211 and the second connecting electrode 212 is connected to the source 171 (or source 172) or drain 172 (or drain 171) of the thin film transistor 100, as shown in Figures 1 ⁇
  • the first mounting electrode 1111 is electrically connected to the first connecting electrode 211
  • the second mounting electrode 1112 is electrically connected to the second connecting electrode 212.
  • the present application exemplifies the structure of the array substrate 10 or the thin film transistor 100, it is not limited thereto.
  • each multiplexing electrode drives the corresponding micro light emitting diode 111 Luminous
  • each multiplexed electrode is multiplexed as a touch electrode to play a touch function.
  • the driving module divides each frame into a display phase and a touch phase; in the display phase, the driving module provides display signals to the multiplexed electrodes; during the touch phase, the driving module provides touch signals to the multiplexed electrodes .
  • each micro light emitting diode 111 includes a first mounting electrode 1111, a second mounting electrode 1112, and the array substrate 10 includes a first connection electrode 211 and a second connection electrode 212 correspondingly connected to each micro light emitting diode 111 as a multiplexer
  • the first connecting electrode 211 or/and the second connecting electrode 212 of the electrode can drive the micro light emitting diode 111 connected to it during the display stage.
  • the micro light emitting diode 111 includes a Micro-LED, but is not limited thereto.
  • the touch phase in the touch phase, at least a part of the plurality of second connection electrodes 212 are multiplexed as touch electrodes, and the plurality of first connection electrodes 211 are not multiplexed as touch electrodes. .
  • one of the plurality of first connection electrodes 211 and the plurality of second connection electrodes 212 is multiplexed as touch electrodes, and the plurality of first connection electrodes The electrode 211 and the other of the plurality of second connection electrodes 212 are not multiplexed.
  • the plurality of second electrodes include a part that is multiplexed as a touch electrode or a part that is not multiplexed, for example, all the plurality of second electrodes are multiplexed electrodes.
  • the plurality of first connection electrodes 211 and the plurality of second connection electrodes 212 are multiplexed as touch electrodes.
  • the plurality of first connection electrodes 211 and the plurality of second connection electrodes 212 are all multiplexed electrodes, and a time-division multiplexing method is adopted.
  • each multiplexed electrode drives the corresponding micro light emitting diode 111 to emit light.
  • each multiplexed electrode is multiplexed as a touch electrode to play a touch function.
  • the touch electrodes include sensing touch electrodes and receiving touch electrodes.
  • the touch phase at least a part of the plurality of first connecting electrodes 211 are multiplexed as sensing touch electrodes, and the plurality of second connecting electrodes 212 At least a part of is multiplexed to receive touch electrodes.
  • the structure of the embedded touch function is mutual capacitive touch
  • the touch electrodes include sensing touch electrodes and receiving touch electrodes.
  • the first connection electrode 211 is multiplexed as the sensing touch electrode and the second connection.
  • the electrodes 212 are multiplexed to receive touch electrodes, for example, the second connection electrodes 212 are multiplexed to sense touch electrodes and the first connection electrodes 211 are multiplexed to receive touch electrodes.
  • the multiple first connection electrodes 211 can be multiplexed in whole or in part
  • the multiple second connection electrodes 212 can be multiplexed in whole or in part.
  • an example of the setting method of the embedded mutual capacitive touch is proposed.
  • the touch electrodes include sensing touch electrodes or receiving touch electrodes.
  • the touch electrodes include sensing touch electrodes or receiving touch electrodes.
  • at least a part of the plurality of first connection electrodes 211 and the plurality of second connection electrodes 212 are multiplexed as inductive touch Electrodes and receiving touch electrodes.
  • the structure of the built-in touch function is mutual capacitive touch
  • the touch electrodes include sensing touch electrodes and receiving touch electrodes.
  • the first connecting electrode 211 is multiplexed as sensing touch electrodes and receiving touch.
  • Electrodes, such as the second connecting electrode 212 are multiplexed as sensing touch electrodes and receiving touch electrodes.
  • the multiple first connection electrodes 211 can be multiplexed in whole or in part
  • the multiple second connection electrodes 212 can be multiplexed in whole or in part.
  • an example of the setting method of the embedded mutual capacitive touch is proposed.
  • the first metal layer 21 further includes a third touch electrode 213.
  • the third touch electrode 213 may be disposed between the first connection electrode 211 or/and the second connection electrode 212, and the third touch electrode 213 may be connected to the multiplexed first connection electrode 211 or/and the second connection electrode.
  • the electrodes 212 together constitute a touch electrode.
  • the arrangement of the third touch electrode 213 can assist the multiplexing electrode to perform a touch function and improve the touch performance.
  • the third touch electrode 213 may be provided.
  • the first connection electrode 211 and the second connection electrode 212 may not be multiplexed as touch electrodes, and the third touch electrode 213 can be set.
  • the third touch electrode 213 can be set. Realize touch function.
  • the third touch electrode 213 is configured as a sensing touch electrode and a receiving touch electrode.
  • the third touch electrode 213 is configured as a touch electrode.
  • a good touch function can also be realized, which is another in-cell touch setting method.
  • each touch electrode in the above embodiments may be provided with a first connection electrode 211 or/and a second connection electrode 212;
  • each touch electrode in the above embodiments may be provided with a first connection electrode 211 or/and a second connection electrode 212, and a third touch electrode;
  • each touch electrode in the above-mentioned embodiments may be provided with a third touch electrode 213.
  • each touch electrode includes a multiplexing electrode.
  • each touch electrode includes a first connection electrode 211 or/and a second connection electrode 212 as a multiplexing electrode.
  • each touch electrode includes a multiplexing electrode and a third touch electrode 213.
  • each touch electrode includes a first connection electrode 211 or/and a second connection electrode 212 as a multiplexing electrode, and a third touch electrode 213.
  • each touch electrode includes a third touch electrode 213.
  • each touch electrode includes a plurality of multiplexing electrodes connected to each other.
  • each touch electrode includes a plurality of first connection electrodes 211, or each touch electrode includes a plurality of first connection electrodes.
  • Two connection electrodes 212 are two connection electrodes 212.
  • each touch electrode includes a plurality of first connection electrodes 211 or/and a plurality of second connection electrodes 212.
  • each touch electrode includes one first connection electrode 211 and a plurality of second connection electrodes 212, or each The touch electrode includes a plurality of first connecting electrodes 211 and a second connecting electrode 212
  • each touch electrode includes one or more multiplexing electrodes and one or more third touch electrodes 213 connected to each other.
  • each touch electrode includes a plurality of third touch electrodes 213 connected to each other.
  • the foregoing embodiment exemplifies the number of the first connection electrode 211, the second connection electrode 212, and the third touch electrode 213 in each touch electrode.
  • This application does not limit the number of each touch electrode.
  • the number of multiplexing electrodes and third touch electrodes There are many ways to set the touch electrodes, which can be selected according to the design requirements of the display panel to expand the structure range and application range of the in-cell touch setting.
  • the array substrate 10 includes a base 11 and a second metal layer 19.
  • the second metal layer is located between the base 11 and the first metal layer 21, and the first metal layer 21 and the second metal layer
  • a first insulating layer 20 is arranged between the two metal layers 19, and the second metal layer 19 further includes a plurality of touch connection electrodes 191, and each touch connection electrode 191 is connected between two corresponding multiplexing electrodes.
  • each touch electrode includes a plurality of first connection electrodes 211 or/and a plurality of second connection electrodes 212, and the first connection electrode 211 or/and the second connection electrode 212 in the same touch electrode pass through The touch connection electrode 191 is connected as a whole.
  • the array substrate 10 includes a base 11 and a second metal layer 19.
  • the second metal layer is located between the base 11 and the first metal layer 21, and the first metal layer 21 and the second metal layer
  • a first insulating layer 20 is provided between the two metal layers 19, and the second metal layer 19 also includes a plurality of touch connection electrodes 191.
  • Each touch connection electrode 191 is connected to two corresponding multiplexing electrodes, or corresponding multiplexing The electrode and the third touch electrode 213, or two corresponding third touch electrodes 213.
  • each touch electrode includes a plurality of first connection electrodes 211 or/and a plurality of second connection electrodes 212, and a plurality of third touch electrodes 213, and a first connection electrode 211 or/and a second connection electrode 212 and the third touch electrode 213 are connected as a whole through the touch connection electrode 191.
  • each touch electrode includes a plurality of third touch electrodes 213, and the third touch electrodes 213 are connected as a whole through the touch connection electrodes 191.
  • the area and range of the touch electrode can be selected, which increases the structural range and range of the in-cell touch setting. Application range, and improve touch performance.
  • the second metal layer 19 includes a plurality of touch traces 192 and a plurality of touch connection electrodes 191, and each touch trace 192 is connected to a corresponding Touch electrodes or touch connection electrodes 191.
  • the structure of the embedded touch function is self-capacitive touch
  • the touch electrodes are touch sensing electrodes
  • the touch traces 192 are touch driving traces
  • the touch traces 192 are connected to the corresponding Touch electrodes.
  • the array substrate 10 includes a third metal layer 17, the third metal layer 17 is located between the base 11 and the second metal layer 19, and the second metal layer 19 and the third metal layer A second insulating layer 18 is provided between the layers 17, where the third metal layer 17 includes a plurality of touch traces 173 and the source 171 (or source 172) and drain 172 (or drain 171) of the thin film transistor 100 ), each touch wire 173 is connected to a corresponding touch electrode.
  • the structure of the embedded touch function is self-capacitive touch
  • the touch electrodes are touch sensing electrodes
  • the touch traces 173 are touch driving traces
  • the touch traces 173 are connected to the corresponding Touch electrodes.
  • the structure range and application range of the in-cell touch setting are increased.
  • the present application provides a manufacturing method of the micro light emitting diode display panel 1000. Please refer to FIG. 1 and FIG. 6.
  • the manufacturing method includes:
  • a third metal layer 17 is formed on one side of the substrate 11, and the third metal layer 17 includes the source electrode 171 (or source electrode 172) and the drain electrode 172 (or drain electrode 171) of the thin film transistor 100;
  • a second metal layer 19 is formed on the second insulating layer 18, and the second metal layer 19 includes a plurality of touch connection electrodes 191 and a plurality of touch traces 192;
  • a first insulating layer 20 is formed on the second metal layer 19; the first insulating layer 20 includes a second via 201 and a third via 202.
  • the orthographic projection of the second via 201 on the substrate 11 and the first via The orthographic projections of the holes 181 on the substrate 11 at least partially overlap;
  • a first metal layer 21 is formed on the first insulating layer.
  • the first metal layer 21 includes a plurality of first connection electrodes 211 and a plurality of second connection electrodes 212.
  • the first connection electrodes 211 pass through the first via 181 and the second
  • the two vias 201 are connected to the source 171 (or source 172) or the drain 172 (or drain 171) of the thin film transistor 100, and at least one of the plurality of first connection electrodes 211 and the plurality of second connection electrodes 212 is Multiplexing electrodes, each multiplexing electrode drives the corresponding micro light emitting diode 111 to emit light in the display stage, each multiplexing electrode is multiplexed as a touch electrode in the touch stage, and each touch electrode includes multiple multiplexing electrodes connected to each other Electrodes, each touch connection electrode 191 is connected between two corresponding multiplexing electrodes, and the touch wiring 192 is connected to the touch connection electrode 191 of the corresponding touch electrode;
  • the manufacturing method further includes forming a buffer layer 12 on one side of the substrate 11, and forming a thin film transistor 100 on the buffer layer 12.
  • the thin film transistor includes an active layer 13, a gate insulating layer 14, a gate electrode 15, and a layer The inter-insulating layer 16, the source electrode 171 (or source electrode 172), and the drain electrode 172 (or drain electrode 171), wherein the structure of the thin film transistor 100 is not limited, for example, the thin film transistor 100 may be a top gate type or a bottom gate type.
  • the touch trace may be disposed on the third metal layer 17.
  • the third metal layer 17 includes the touch touch trace 173.
  • the micro light emitting diodes 111 are mounted on the array substrate 10, and the electrical connection of each micro light emitting diode 111 to the corresponding first connection electrode 211 and the corresponding second connection electrode 212 includes But it is not limited to soldering, and the connection material can be solder paste.
  • the present application also provides a display device 3000. Please refer to FIG. 7.
  • the display device 3000 includes any of the above-mentioned miniature light-emitting diode display panels 1000.
  • the display device may also include, but is not limited to, other components 2000 such as a housing and a protective component.
  • This application integrates the touch function into the micro LED display panel, and proposes a micro LED display panel with an in-cell touch structure. There is no need to stack additional touch components, which can reduce the cost of the micro LED display panel. Thickness and cost, thereby increasing the application range of the miniature light-emitting diode display panel.

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  • Engineering & Computer Science (AREA)
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Abstract

一种微型发光二极管显示面板（1000），包括：多个微型发光二极管（111）；阵列基板（10），包括第一金属层（21），第一金属层（21）包括多个第一连接电极（211）和多个第二连接电极（212）；多个第一连接电极（211）和多个第二连接电极（212）中的至少一个为复用电极，在显示阶段，每一复用电极驱动对应的微型发光二极管（111）发光；在触控阶段，每一复用电极复用为触控电极。

Description

微型发光二极管显示面板及其制作方法、显示装置 技术领域
本申请涉及显示面板技术领域，尤其涉及一种微型发光二极管显示面板及其制作方法、显示装置。
 背景技术
微型发光二极管（Micro-LED）显示面板具有寿命长、亮度高、发光效率好、功耗低的优点。随着显示技术的飞速发展，触控技术已经成为显示产品必不可少的部分。然而，目前的微型发光二极管显示面板的触控部件和显示部件是相互独立且层叠设置的，导致微型发光二极管显示面板的触控显示装置厚度较大，进而也缩小了微型发光二极管显示面板的应用范围。
 技术问题
本申请实施例提供了一种具有内嵌触控结构的微型发光二极管显示面板，可以降低微型发光二极管显示面板的厚度，进而增大微型发光二极管显示器的应用范围。
 技术解决方案
一种微型发光二极管显示面板，包括：
多个微型发光二极管；
阵列基板，包括第一金属层，所述第一金属层包括多个第一连接电极和多个第二连接电极，每一所述第一连接电极和对应的所述第二连接电极电性连接于对应的所述微型发光二极管；
其中，多个所述第一连接电极和多个所述第二连接电极中的至少一个为复用电极，在显示阶段，每一所述复用电极驱动对应的所述微型发光二极管发光；
其中，在触控阶段，每一所述复用电极复用为触控电极。
一种微型发光二极管显示面板的制造方法，包括：
在基底的一侧形成第三金属层，所述第三金属层包括薄膜晶体管的源极和漏极；
在所述第三金属层上形成第二绝缘层，所述第二绝缘包括第一过孔；
在所述第二绝缘层上形成第二金属层，所述第二金属层包括多个触控连接电极和多条触控走线；
在所述第二金属层上形成第一绝缘层；所述第一绝缘层包括第二过孔和第三过孔，所述第二过孔在所述基底上的正投影与第一过孔在所述基底上的正投影至少部分重合；
在所述第一绝缘层上形成第一金属层，所述第一金属层包括多个第一连接电极和多个第二连接电极，所述第一连接电极通过所述第一过孔和所述第二过孔连接于薄膜晶体管的所述源极或漏极，多个所述第一连接电极和多个所述第二连接电极中的至少一个为复用电极，每一所述复用电极在显示阶段驱动对应的所述微型发光二极管发光，每一所述复用电极在触控阶段复用为触控电极，每一所述触控电极包括相互连接的多个所述复用电极，每一所述触控连接电极连接于对应的两所述复用电极之间，所述触控走线连接于对应的所述触控电极的所述触控连接电极；
安装所述微型发光二极管，使得每一所述第一连接电极和对应的所述第二连接电极电性连接于对应的所述微型发光二极管。
本申请还提出了一种显示装置，包括微型发光二极管显示面板，所述微型发光二极管显示面板包括：
多个微型发光二极管；
阵列基板，包括第一金属层，所述第一金属层包括多个第一连接电极和多个第二连接电极，每一所述第一连接电极和对应的所述第二连接电极电性连接于对应的所述微型发光二极管；
其中，多个所述第一连接电极和多个所述第二连接电极中的至少一个为复用电极，在显示阶段，每一所述复用电极驱动对应的所述微型发光二极管发光；
其中，在触控阶段，每一所述复用电极复用为触控电极。
 有益效果
本申请的有益效果为：通过将触控功能集成在微型发光二极管显示面板的内部，提出一种具有内嵌触控结构的微型发光二极管显示面板，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。
 附图说明
图1为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；
图2为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；
图3为本申请一实施例提供的微型发光二极管显示面板的断面结构示意图；
图4为本申请一实施例提供的微型发光二极管显示面板的触控电极的俯视结构示意图；
图5为本申请一实施例提供的微型发光二极管显示面板的触控电极的俯视结构示意图；
图6为本申请一实施例提供的微型发光二极管显示面板的触控电极和触控走线的俯视结构示意图；
图7为本申请一实施例提供的一种显示装置的示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
请参阅图1~图6，本申请的实施例提供了一种微型发光二极管显示面板1000，包括：多个微型发光二极管111；阵列基板10，包括第一金属层21，第一金属层21包括多个第一连接电极211和多个第二连接电极212，每一第一连接电极211和对应的第二连接电极212电性连接于对应的微型发光二极管111；其中，多个第一连接电极211和多个第二连接电极212中的至少一个为复用电极，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光；其中，在触控阶段，每一复用电极复用为触控电极。
本申请的有益效果为：通过将触控功能集成在微型发光二极管显示面板的内部，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。
具体的，例如阵列基板10包括薄膜晶体管100，薄膜晶体管100包括有源层13、栅绝缘层14、栅极15、层间绝缘层16、源极171（或源极172）、漏极172（或漏极171），第一连接电极211电性连接于薄膜晶体管100的源极171（或源极172）或漏极172（或漏极171）。微型发光二极管111包括第一安装电极1111、第二安装电极1112和微型发光二极管本体1113，第一安装电极1111可以为微型发光二极管111的阳极或者阴极，第二安装电极1112可以为微型发光二极管111的阴极或者阳极，第一连接电极211和第二连接电极212其中之一连接于薄膜晶体管100的源极171（或源极172）或漏极172（或漏极171），如图1~图3所示，第一安装电极1111电性连接于第一连接电极211，第二安装电极1112电性连接于第二连接电极212。需要说明的是，虽然本申请举例说明了阵列基板10或者薄膜晶体管100的结构，但不限于此。
具体的，第一连接电极211和多个第二连接电极212中的至少一个为复用电极，即采用分时复用的方式，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光，在在触控阶段，每一复用电极复用为触控电极起到触控功能。例如具体包括：驱动模块将每一帧分为显示阶段以及触控阶段；在显示阶段时，驱动模块向复用电极提供显示信号；在触控阶段时，驱动模块向复用电极提供触控信号。其中，每一微型发光二极管111包括第一安装电极1111、第二安装电极1112，阵列基板10包括与每一微型发光二极管111对应连接的第一连接电极211和第二连接电极212，作为复用电极的第一连接电极211或/和第二连接电极212在显示阶段可以驱动与其相连接的微型发光二极管111。
具体的，微型发光二极管111包括Micro-LED，但不限于此。
在一些实施例中，请参阅图1、图3，在触控阶段，多个第二连接电极212的至少一部分复用为触控电极，多个第一连接电极211不复用为触控电极。
在一些实施例中，请参阅图1、图3，在触控阶段，多个第一连接电极211和多个第二连接电极212中的一种复用为触控电极，多个第一连接电极211和多个第二连接电极212中的另一种不复用。
具体的，例如多个第二电极包括复用为触控电极的一部分或者不复用的一部分，例如多个第二电极全部为复用电极。通过将第一连接电极211和多个第二连接电极212中的一种复用为触控电极，简化了制作工艺，不用另外再制作触控电极。
在一些实施例中，请参阅图1、图3，在触控阶段，多个第一连接电极211和多个第二连接电极212均复用为触控电极。
具体的，多个第一连接电极211和多个第二连接电极212都为复用电极，采用分时复用的方式，在显示阶段，每一复用电极驱动对应的微型发光二极管111发光，在在触控阶段，每一复用电极复用为触控电极起到触控功能。通过将多个第一连接电极211和多个第二连接电极212均复用为触控电极，简化了制作工艺，不用另外再制作触控电极。
在一些实施例中，触控电极包括感应触控电极和接收触控电极，在触控阶段，多个第一连接电极211的至少一部分复用为感应触控电极，多个第二连接电极212的至少一部分复用为接收触控电极。
具体的，例如内嵌的触控功能的结构为互容式触控，触控电极包括感应触控电极和接收触控电极，例如第一连接电极211复用为感应触控电极和第二连接电极212复用为接收触控电极，例如第二连接电极212复用为感应触控电极和第一连接电极211复用接收触控电极。需要说明的是：多个第一连接电极211可以全部或部分复用，多个第二连接电极212可以全部或部分复用。本实施例中举例提出了内嵌互容式触控的设置方法。
在一些实施例中，触控电极包括感应触控电极或接收触控电极，在触控阶段，多个第一连接电极211和多个第二连接电极212中的至少一部分复用为感应触控电极和接收触控电极。
具体的，例如内嵌的触控功能的结构为互容式触控，触控电极包括感应触控电极和接收触控电极，例如第一连接电极211复用为感应触控电极和接收触控电极，例如第二连接电极212复用为感应触控电极和接收触控电极。需要说明的是：多个第一连接电极211可以全部或部分复用，多个第二连接电极212可以全部或部分复用。本实施例中举例提出了内嵌互容式触控的设置方法。
在一些实施例中，请参阅图2，第一金属层21还包括第三触控电极213。
具体的，第三触控电极213可以设置在第一连接电极211或/和第二连接电极212之间，第三触控电极213可以与复用的第一连接电极211或/和第二连接电极212一起构成触控电极。第三触控电极213的设置可以辅助复用电极起到触控功能，提升触控性能。
在一些实施例中，可以只设置第三触控电极213，此时，第一连接电极211和第二连接电极212可以不复用为触控电极，通过第三触控电极213的设置就可以实现触控功能。例如在互容式触控结构中第三触控电极213设置为感应触控电极和接收触控电极，例如在自容式触控结构中第三触控电极213设置为触控电极。当只设置第三触控电极213为触控电极时，也可以实现很好的触控功能，为另外一种内嵌触控设置方法。
在一些实施例中，上述实施例中的每一触控电极可以设置一个第一连接电极211或/和第二连接电极212；
在一些实施例中，上述实施例中的每一触控电极可以设置一个第一连接电极211或/和第二连接电极212、以及一个第三触控电极；
在一些实施例中，上述实施例中的每一触控电极可以设置一个第三触控电极213。
在一些实施例中，每一触控电极包括一个复用电极。
具体的，例如每一触控电极包括作为复用电极的一个第一连接电极211或/和一个第二连接电极212。
在一些实施例中，每一触控电极包括一个复用电极和第三触控电极213。
具体的，例如每一触控电极包括作为复用电极的一个第一连接电极211或/和一个第二连接电极212、以及一个第三触控电极213.
在一些实施例中，每一触控电极包括一个第三触控电极213。
在一些实施例中，请参阅图4，每一触控电极包括相互连接的多个复用电极。
具体的，例如当复用电极为第一连接电极211和第二连接电极212中的一种时，每一触控电极包括多个第一连接电极211，或者每一触控电极包括多个第二连接电极212。
具体的，例如当复用电极为第一连接电极211和第二连接电极212中的两种时，每一触控电极包括多个第一连接电极211或/和多个第二连接电极212。
具体的，例如当复用电极为第一连接电极211和第二连接电极212中的两种时，每一触控电极包括一个第一连接电极211和多个第二连接电极212，或每一触控电极包括多个第一连接电极211和一个第二连接电极212
在一些实施例中，请参阅图5，每一触控电极包括相互连接的一个或多个复用电极、以及一个或多个第三触控电极213。
在一些实施例中，每一触控电极包括相互连接的多个第三触控电极213。
需要说明的是，上述实施例中举例说明每一触控电极中第一连接电极211、第二连接电极212、以及第三触控电极213的数量，本申请不限定每一触控电极所包括的复用电极和第三触控电极的数量。触控电极的设置方式有多种，可以依据显示面板的设计需要进行选择，扩大内嵌触控设置的结构范围和应用范围。
在一些实施例中，请参阅图1~图5，阵列基板10包括基底11和第二金属层19，第二金属层位于基底11与第一金属层21之间，第一金属层21与第二金属层19之间设置有第一绝缘层20，第二金属层19还包括多个触控连接电极191，每一触控连接电极191连接于对应的两复用电极之间。
具体的，例如每一触控电极包括多个第一连接电极211或/和多个第二连接电极212，同一触控电极内的第一连接电极211或/和第二连接电极212之间通过触控连接电极191连接成一个整体。
在一些实施例中，请参阅图1~图5，阵列基板10包括基底11和第二金属层19，第二金属层位于基底11与第一金属层21之间，第一金属层21与第二金属层19之间设置有第一绝缘层20，第二金属层19还包括多个触控连接电极191，每一触控连接电极191连接于对应的两复用电极、或对应的复用电极与第三触控电极213、或对应的两第三触控电极213。
具体的，例如每一触控电极包括多个第一连接电极211或/和多个第二连接电极212、以及多个第三触控电极213，第一连接电极211或/和第二连接电极212、以及第三触控电极213之间通过触控连接电极191连接成一个整体。
具体的，例如每一触控电极包括多个第三触控电极213，第三触控电极213之间通过触控连接电极191连接成一个整体。
通过触控连接电极191将多个复用电极或/和第三触控电极213连接作为一个触控电极，可以选择设置触控电极的面积和范围，增加了内嵌触控设置的结构范围和应用范围，并提高触控性能。
在一些实施例中，请参阅图1、图2、图6，第二金属层19包括多条触控走线192和多个触控连接电极191，每一触控走线192连接于对应的触控电极或触控连接电极191。
具体的，例如在内嵌的触控功能的结构为自容式触控，触控电极为触控感应电极，触控走线192为触控驱动走线，触控走线192连接于对应的触控电极。
在一些实施例中，请参阅图3、图6，阵列基板10包括第三金属层17，第三金属层17位于基底11与第二金属层19之间，第二金属层19与第三金属层17之间设置有第二绝缘层18，其中，第三金属层17包括多条触控走线173和薄膜晶体管100的源极171（或源极172）、漏极172（或漏极171），每一触控走线173连接于对应的触控电极。
具体的，例如在内嵌的触控功能的结构为自容式触控，触控电极为触控感应电极，触控走线173为触控驱动走线，触控走线173连接于对应的触控电极。
通过触控走线设置与源极171（或源极172）、漏极172（或漏极171）同层或不同层设置，增加了内嵌触控设置的结构范围和应用范围。
本申请提供了一种微型发光二极管显示面板1000的制造方法，请参阅图1、图6，制造方法包括：
S1：在基底11的一侧形成第三金属层17，第三金属层17包括薄膜晶体管100的源极171（或源极172）和漏极172（或漏极171）；
S2：在第三金属层17上形成第二绝缘层18，第二绝缘包括第一过孔181；
S3：在第二绝缘层18上形成第二金属层19，第二金属层19包括多个触控连接电极191和多条触控走线192；
S4：在第二金属层19上形成第一绝缘层20；第一绝缘层20包括第二过孔201和第三过孔202，第二过孔201在基底11上的正投影与第一过孔181在基底11上的正投影至少部分重合；
S5：在第一绝缘层上形成第一金属层21，第一金属层21包括多个第一连接电极211和多个第二连接电极212，第一连接电极211通过第一过孔181和第二过孔201连接于薄膜晶体管100的源极171（或源极172）或漏极172（或漏极171），多个第一连接电极211和多个第二连接电极212中的至少一个为复用电极，每一复用电极在显示阶段驱动对应的微型发光二极管111发光，每一复用电极在触控阶段复用为触控电极，每一触控电极包括相互连接的多个复用电极，每一触控连接电极191连接于对应的两复用电极之间，触控走线192连接于对应的触控电极的触控连接电极191；
S6:安装微型发光二极管111，使得每一第一连接电极211和对应的第二连接电极212电性连接于对应的微型发光二极管111。
在一些实施例的制造方法中，还包括在基底11的一侧形成缓冲层12，在缓冲层12上形成薄膜晶体管100，薄膜晶体管包括有源层13、栅绝缘层14、栅极15、层间绝缘层16、源极171（或源极172）、漏极172（或漏极171）,其中，薄膜晶体管100的结构不做限定，例如薄膜晶体管100可以为顶栅型或底栅型。
在一些实施例的制造方法中，触控走线可设置于第三金属层17上，请参阅图3，第三金属层17包括触控触控走线173。
需要说明的是，在上述制造方法中，安装微型发光二极管111于阵列基板10上，每一微型发光二极管111与对应的第一连接电极211和对应的第二连接电极212的电性连接方式包括但不限于焊接，连接材料可以为锡膏。
通过上述制造方法，可以制造出高性能的具有内嵌触控功能的微型发光二极管显示面板1000。
本申请还提供了一种显示装置3000，请参阅图7，显示装置3000包括上述任意一种微型发光二极管显示面板1000，显示装置还可以包括但不限于外壳、保护部件等其他部件2000。
本申请通过将触控功能集成在微型发光二极管显示面板的内部，提出一种具有内嵌触控结构的微型发光二极管显示面板，不需要另外层叠设置触控部件，可以降低微型发光二极管显示面板的厚度和成本，进而增大微型发光二极管显示面板的应用范围。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (17)

  1. 一种微型发光二极管显示面板，包括：
    多个微型发光二极管；
    阵列基板，包括第一金属层，所述第一金属层包括多个第一连接电极和多个第二连接电极，每一所述第一连接电极和对应的所述第二连接电极电性连接于对应的所述微型发光二极管；
    其中，多个所述第一连接电极和多个所述第二连接电极中的至少一个为复用电极，在显示阶段，每一所述复用电极驱动对应的所述微型发光二极管发光；
    其中，在触控阶段，每一所述复用电极复用为触控电极。
  2. 根据权利要求1所述的微型发光二极管显示面板，其中，
    在所述触控阶段，多个所述第二连接电极的至少一部分复用为所述触控电极，多个所述第一连接电极不复用为所述触控电极。
  3. 根据权利要求1所述的微型发光二极管显示面板，其中，
    在所述触控阶段，多个所述第一连接电极和多个所述第二连接电极均复用为所述触控电极。
  4. 根据权利要求3所述的微型发光二极管显示面板，其中，
    所述触控电极包括感应触控电极和接收触控电极，在所述触控阶段，多个所述第一连接电极的至少一部分复用为所述感应触控电极，多个所述第二连接电极的至少一部分复用为所述接收触控电极。
  5. 根据权利要求2所述的微型发光二极管显示面板，其中，
    所述触控电极包括感应触控电极和接收触控电极，在所述触控阶段，多个所述第二连接电极中的至少一部分复用为所述感应触控电极和所述接收触控电极。
  6. 根据权利要求1所述的微型发光二极管显示面板，其中，
    所述第一金属层还包括第三触控电极。
  7. 根据权利要求1所述的微型发光二极管显示面板，其中，
    每一所述触控电极包括相互连接的多个所述复用电极。
  8. 根据权利要求7所述的微型发光二极管显示面板，其中，
    所述阵列基板包括基底和第二金属层，所述第二金属层位于所述基底与所述第一金属层之间，所述第一金属层与所述第二金属层之间设置有第一绝缘层，所述第二金属层还包括多个触控连接电极，每一所述触控连接电极连接于对应的两所述复用电极之间。
  9. 一种微型发光二极管显示面板的制造方法，包括：
    在基底的一侧形成第三金属层，所述第三金属层包括薄膜晶体管的源极和漏极；
    在所述第三金属层上形成第二绝缘层，所述第二绝缘包括第一过孔；
    在所述第二绝缘层上形成第二金属层，所述第二金属层包括多个触控连接电极和多条触控走线；
    在所述第二金属层上形成第一绝缘层；所述第一绝缘层包括第二过孔和第三过孔，所述第二过孔在所述基底上的正投影与第一过孔在所述基底上的正投影至少部分重合；
    在所述第一绝缘层上形成第一金属层，所述第一金属层包括多个第一连接电极和多个第二连接电极，所述第一连接电极通过所述第一过孔和所述第二过孔连接于薄膜晶体管的所述源极或漏极，多个所述第一连接电极和多个所述第二连接电极中的至少一个为复用电极，每一所述复用电极在显示阶段驱动对应的所述微型发光二极管发光，每一所述复用电极在触控阶段复用为触控电极，每一所述触控电极包括相互连接的多个所述复用电极，每一所述触控连接电极连接于对应的两所述复用电极之间，所述触控走线连接于对应的所述触控电极的所述触控连接电极；
    安装所述微型发光二极管，使得每一所述第一连接电极和对应的所述第二连接电极电性连接于对应的所述微型发光二极管。
  10. 一种显示装置，包括微型发光二极管显示面板，所述微型发光二极管显示面板包括：
    多个微型发光二极管；
    阵列基板，包括第一金属层，所述第一金属层包括多个第一连接电极和多个第二连接电极，每一所述第一连接电极和对应的所述第二连接电极电性连接于对应的所述微型发光二极管；
    其中，多个所述第一连接电极和多个所述第二连接电极中的至少一个为复用电极，在显示阶段，每一所述复用电极驱动对应的所述微型发光二极管发光；
    其中，在触控阶段，每一所述复用电极复用为触控电极。
  11. 根据权利要求10所述的显示装置，其中，
    在所述触控阶段，多个所述第二连接电极的至少一部分复用为所述触控电极，多个所述第一连接电极不复用为所述触控电极。
  12. 根据权利要求10所述的显示装置，其中，
    在所述触控阶段，多个所述第一连接电极和多个所述第二连接电极均复用为所述触控电极。
  13. 根据权利要求12所述的显示装置，其中，
    所述触控电极包括感应触控电极和接收触控电极，在所述触控阶段，多个所述第一连接电极的至少一部分复用为所述感应触控电极，多个所述第二连接电极的至少一部分复用为所述接收触控电极。
  14. 根据权利要求11所述的显示装置，其中，
    所述触控电极包括感应触控电极和接收触控电极，在所述触控阶段，多个所述第二连接电极中的至少一部分复用为所述感应触控电极和所述接收触控电极。
  15. 根据权利要求10所述的显示装置，其中，
    所述第一金属层还包括第三触控电极。
  16. 根据权利要求10所述的显示装置，其中，
    每一所述触控电极包括相互连接的多个所述复用电极。
  17. 根据权利要求16所述的显示装置，其中，
    所述阵列基板包括基底和第二金属层，所述第二金属层位于所述基底与所述第一金属层之间，所述第一金属层与所述第二金属层之间设置有第一绝缘层，所述第二金属层还包括多个触控连接电极，每一所述触控连接电极连接于对应的两所述复用电极之间。
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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
CN112562526A (zh) * 2020-12-11 2021-03-26 京东方科技集团股份有限公司 一种显示面板及其制作方法、显示装置
CN114201073B (zh) * 2021-12-11 2023-11-07 武汉华星光电半导体显示技术有限公司 微型发光二极管触控显示面板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107168589A (zh) * 2017-07-20 2017-09-15 上海天马微电子有限公司 一种显示基板及其制作方法、显示面板和显示装置
CN107256871A (zh) * 2017-06-27 2017-10-17 上海天马微电子有限公司 微发光二极管显示面板和显示装置
US20180358582A1 (en) * 2017-06-09 2018-12-13 Revolution Display, Llc Visual-Display Structure Having a Metal Contrast Enhancer, and Visual Displays Made Therewith
CN109782959A (zh) * 2019-02-02 2019-05-21 京东方科技集团股份有限公司 触摸显示屏、驱动方法及显示装置
CN110942715A (zh) * 2018-09-24 2020-03-31 群创光电股份有限公司 可挠曲电子装置
CN111244014A (zh) * 2020-01-10 2020-06-05 福州京东方光电科技有限公司 一种转移基板、驱动背板、转移方法及显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105094437B (zh) * 2015-08-13 2018-12-21 京东方科技集团股份有限公司 一种触控显示面板及其驱动方法、显示装置
CN105183253B (zh) * 2015-08-13 2018-12-18 京东方科技集团股份有限公司 一种触控显示面板及其驱动方法、显示装置
CN105096841A (zh) * 2015-08-18 2015-11-25 京东方科技集团股份有限公司 一种电泳显示装置及其驱动方法
TWI668619B (zh) * 2017-07-07 2019-08-11 鴻海精密工業股份有限公司 微型led觸控顯示面板
CN109037285B (zh) * 2018-07-26 2020-11-27 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置、掩膜版组件
CN109782965B (zh) * 2019-01-23 2022-09-27 京东方科技集团股份有限公司 触控显示基板和显示装置
CN110010021A (zh) * 2019-04-26 2019-07-12 京东方科技集团股份有限公司 无机发光二极管显示基板、显示装置及驱动方法
CN111857395A (zh) * 2019-04-30 2020-10-30 群创光电股份有限公司 触控显示设备

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180358582A1 (en) * 2017-06-09 2018-12-13 Revolution Display, Llc Visual-Display Structure Having a Metal Contrast Enhancer, and Visual Displays Made Therewith
CN107256871A (zh) * 2017-06-27 2017-10-17 上海天马微电子有限公司 微发光二极管显示面板和显示装置
CN107168589A (zh) * 2017-07-20 2017-09-15 上海天马微电子有限公司 一种显示基板及其制作方法、显示面板和显示装置
CN110942715A (zh) * 2018-09-24 2020-03-31 群创光电股份有限公司 可挠曲电子装置
CN109782959A (zh) * 2019-02-02 2019-05-21 京东方科技集团股份有限公司 触摸显示屏、驱动方法及显示装置
CN111244014A (zh) * 2020-01-10 2020-06-05 福州京东方光电科技有限公司 一种转移基板、驱动背板、转移方法及显示装置

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