WO2021235256A1 - 半導体装置及びその製造方法並びに電力変換装置 - Google Patents

半導体装置及びその製造方法並びに電力変換装置 Download PDF

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Publication number
WO2021235256A1
WO2021235256A1 PCT/JP2021/017674 JP2021017674W WO2021235256A1 WO 2021235256 A1 WO2021235256 A1 WO 2021235256A1 JP 2021017674 W JP2021017674 W JP 2021017674W WO 2021235256 A1 WO2021235256 A1 WO 2021235256A1
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Prior art keywords
semiconductor element
protrusion
semiconductor device
conductive adhesive
back surface
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PCT/JP2021/017674
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English (en)
French (fr)
Japanese (ja)
Inventor
悠矢 清水
泰 中島
脩平 横山
Original Assignee
三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to CN202180033497.5A priority Critical patent/CN115516611A/zh
Priority to JP2022524386A priority patent/JP7407924B2/ja
Publication of WO2021235256A1 publication Critical patent/WO2021235256A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/06181—On opposite sides of the body
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/92—Specific sequence of method steps
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • This disclosure relates to a semiconductor device, a manufacturing method thereof, and a power conversion device.
  • Patent Document 1 discloses a mold package including a ceramic substrate, an electronic component, a land, a conductive adhesive, and a mold resin.
  • the land is provided on one surface of the ceramic substrate.
  • Electronic components have electrodes.
  • the electrodes of the electronic component are fixed to the land using a conductive adhesive.
  • the mold resin seals the ceramic substrate, the electronic component, and the conductive adhesive.
  • An object of the first aspect of the present disclosure is to provide a semiconductor device having improved reliability and a method for manufacturing the same.
  • An object of the second aspect of the present disclosure is to provide a power conversion device with improved reliability.
  • the semiconductor device of the present disclosure includes a lead frame, a conductive adhesive, a semiconductor element, and a sealing member.
  • the lead frame includes the main surface.
  • the conductive adhesive contains a resin and conductive particles dispersed in the resin.
  • the semiconductor element is fixed on the main surface of the lead frame using a conductive adhesive.
  • the sealing member seals a part of the lead frame, the conductive adhesive, and the semiconductor element.
  • the semiconductor element includes a back surface facing the main surface of the lead frame, a front surface opposite to the back surface, and a side surface connecting the back surface and the front surface.
  • the conductive adhesive has a first conductive adhesive portion covered with the semiconductor element in the plan view of the main surface of the lead frame and a second conductive adhesive exposed from the semiconductor element in the plan view of the main surface of the lead frame. Includes a sex adhesive portion.
  • the second conductive adhesive portion includes a first protrusion separated from the side surface of the semiconductor element and a recess between the side surface of the semiconductor element and the first protrusion.
  • the first protrusion extends around the semiconductor device over a length of 50% or more of the outer circumference of the semiconductor device in a plan view of the main surface of the lead frame.
  • the recess is filled with a sealing member.
  • the method for manufacturing a semiconductor device of the present disclosure includes supplying a conductive paste on the main surface of a lead frame.
  • the conductive paste contains a resin and conductive particles dispersed in the resin.
  • the semiconductor element is moved toward the main surface of the lead frame, whereby a part of the conductive paste is transferred to the outer periphery of the semiconductor element in the plan view of the main surface of the lead frame.
  • the method of manufacturing a semiconductor device of the present disclosure stops moving a semiconductor element toward the main surface of a lead frame, thereby increasing the viscosity of the conductive paste and changing the shape of the conductive paste. Be prepared to stop.
  • the method for manufacturing a semiconductor device is to cure a conductive paste to make the conductive adhesive into a conductive adhesive, and to seal a part of a lead frame, the conductive adhesive, and a semiconductor element. It is provided with a stop member.
  • the semiconductor element includes a back surface facing the main surface of the lead frame, a front surface opposite to the back surface, and a side surface connecting the back surface and the front surface.
  • the semiconductor element is fixed on the main surface of the lead frame using a conductive adhesive.
  • the conductive adhesive has a first conductive adhesive portion covered with the semiconductor element in the plan view of the main surface of the lead frame and a second conductive adhesive exposed from the semiconductor element in the plan view of the main surface of the lead frame. Includes a sex adhesive portion.
  • the second conductive adhesive portion includes a first protrusion separated from the side surface of the semiconductor element and a recess between the side surface of the semiconductor element and the first protrusion.
  • the first protrusion extends around the semiconductor device over a length of 50% or more of the outer circumference of the semiconductor device in a plan view of the main surface of the lead frame.
  • the recess is filled with a sealing member.
  • the power conversion device of the present disclosure includes a main conversion circuit that converts and outputs the input power, and a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.
  • the main conversion circuit has the semiconductor device of the present disclosure.
  • the sealing member is filled in the recess of the conductive adhesive, the adhesive strength between the conductive adhesive and the sealing member is increased. It is possible to prevent the conductive adhesive from peeling off from the semiconductor element and cracks in the conductive adhesive. The reliability of semiconductor devices can be improved.
  • the sealing member is filled in the concave portion of the conductive adhesive.
  • the adhesive strength between the conductive adhesive and the sealing member is increased. It is possible to prevent the conductive adhesive from peeling off from the semiconductor element and cracks in the conductive adhesive. It is possible to obtain a semiconductor device having improved reliability.
  • the power conversion device of the present disclosure includes the semiconductor device of the present disclosure. Therefore, the reliability of the power conversion device of the present disclosure can be improved.
  • FIG. 5 is a schematic partially enlarged cross-sectional view taken along the cross-sectional line II-II shown in FIG. 1 of the semiconductor device of the first embodiment. It is a schematic partial enlarged plan view of the semiconductor device of Embodiment 1.
  • FIG. 3 is a schematic partially enlarged cross-sectional view taken along the cross-sectional line IV-IV shown in FIG. 3 of the semiconductor device of the first embodiment. It is a figure which shows the flowchart of the manufacturing method of the semiconductor device of Embodiment 1.
  • FIG. It is a schematic partial enlarged sectional view which shows one process of the manufacturing method of the semiconductor device of Embodiment 1.
  • FIG. 6 It is a schematic partial enlarged sectional view which shows the next process of the process shown in FIG. 6 in the manufacturing method of the semiconductor device of Embodiment 1.
  • FIG. 7 shows the next process of the process shown in the manufacturing method of the semiconductor device of Embodiment 1.
  • FIG. 8 is a schematic partial enlarged sectional view which shows the next process of the process shown in FIG. 8 in the manufacturing method of the semiconductor device of Embodiment 1.
  • FIG. It is a schematic partial enlarged sectional view which shows the next process of the process shown in FIG. 9 in the manufacturing method of the semiconductor device of Embodiment 1.
  • FIG. 2 It is a schematic partial enlarged sectional view of the semiconductor device of Embodiment 2.
  • FIG. It is a figure which shows the flowchart of the manufacturing method of the semiconductor device of Embodiment 2 and Embodiment 3.
  • FIG. It is a schematic partial enlarged sectional view which shows the next process of the process shown in FIG. 14 in the manufacturing method of the semiconductor device of Embodiment 2.
  • FIG. It is a schematic partial enlarged sectional view which shows the next process of the process shown in FIG. 15 in the manufacturing method of the semiconductor device of Embodiment 2.
  • FIG. It is a schematic partial enlarged sectional view which shows the next process of the process shown in FIG.
  • FIG. 5 is a schematic partially enlarged cross-sectional view taken along the cross-sectional line XX-XX shown in FIG. 19 of the semiconductor device of the third embodiment.
  • FIG. 5 is a schematic partially enlarged cross-sectional view of the semiconductor device of the third embodiment in the cross-sectional line XXI-XXI shown in FIG.
  • It is a schematic partial enlarged perspective view of the semiconductor element included in the semiconductor device of Embodiment 3.
  • FIG. It is a block diagram which shows the structure of the power conversion system which concerns on Embodiment 4.
  • the semiconductor device 1 of the first embodiment will be described with reference to FIGS. 1 to 4.
  • the semiconductor device 1 mainly includes a lead frame 11, a semiconductor element 20, a conductive adhesive 40, and a sealing member 36.
  • the semiconductor device 1 may further include lead frames 12, 13, an IC chip 30, and an electronic component 33.
  • the lead frames 11, 12, and 13 are made of a conductive material such as copper.
  • the lead frame 11 includes a main surface 11a.
  • the semiconductor element 20 is, for example, a power semiconductor element.
  • the power semiconductor element is, for example, an insulated gate bipolar transistor (IGBT), a reverse conduction IGBT (RC-IGBT), or a metal oxide semiconductor field effect transistor (PWM).
  • the semiconductor element 20 may be, for example, a diode or a light emitting diode (LED).
  • the semiconductor element 20 has a back surface 20a facing the main surface 11a of the lead frame 11, a front surface 20b opposite to the back surface 20a, and a back surface 20a and a front surface 20b. Includes side surface 20c to connect.
  • the semiconductor element 20 includes a semiconductor substrate 21, a first electrode 22, and a metallized layer 25.
  • the semiconductor element 20 may include a second electrode 23.
  • the first electrode 22 and the second electrode 23 are provided on the front surface 20b side of the semiconductor element 20 with respect to the semiconductor substrate 21.
  • the first electrode 22 is, for example, an emitter electrode
  • the second electrode 23 is, for example, a gate electrode.
  • the metallize layer 25 is provided on the back surface 20a side of the semiconductor element 20 with respect to the semiconductor substrate 21.
  • the metallize layer 25 may be a back electrode of the semiconductor element 20 such as a drain electrode.
  • the semiconductor element 20 may include a guard ring 24.
  • the guard ring 24 is provided on the front surface 20b side of the semiconductor element 20 with respect to the semiconductor substrate 21.
  • the guard ring 24 surrounds the first electrode 22.
  • the guard ring 24 may further surround the second electrode 23.
  • the guard ring 24 increases the withstand voltage of the semiconductor element 20.
  • the semiconductor element 20 is fixed on the main surface 11a of the lead frame 11 by using the conductive adhesive 40.
  • the outer periphery of the semiconductor element 20 is formed by a plurality of sides 26a, 26b, 26c, 26d.
  • the area of the semiconductor element 20 (that is, the area of the region surrounded by the outer periphery of the semiconductor element) is, for example, 5 mm 2 or less.
  • the semiconductor element 20 includes the corner portions 27a, 27b, 27c, 27d.
  • One end of the side 26a is the corner portion 27a, and the other end of the side 26a is the corner portion 27b.
  • One end of the side 26b is a corner portion 27b, and the other end of the side 26b is a corner portion 27c.
  • One end of the side 26c is a corner portion 27c, and the other end of the side 26c is a corner portion 27d.
  • One end of the side 26d is a corner portion 27d, and the other end of the side 26d is a corner portion 27a.
  • the IC chip 30 is electrically connected to the semiconductor element 20 by using the conductive wire 31.
  • the IC chip 30 is fixed on the lead frame 12 by using the conductive joining member 48.
  • the IC chip 30 controls the semiconductor element 20.
  • the electronic component 33 is an electronic component different from the semiconductor element 20 and the IC chip 30.
  • the electronic component 33 is a passive electronic component such as, for example, a bootstrap diode (BSD).
  • BSD bootstrap diode
  • the electronic component 33 is electrically connected to the IC chip 30 by using a conductive wire.
  • the electronic component 33 is fixed on the lead frame 13 by using the conductive joining member 49.
  • the IC chip 30 and the electronic component 33 form a part of a control circuit for controlling the semiconductor element 20.
  • the first calorific value of the semiconductor element 20 during the operation of the semiconductor device 1 is larger than the second calorific value of the IC chip 30 during the operation of the semiconductor device 1, and the second heat generation of the electronic component 33 during the operation of the semiconductor device 1 3 Greater than the calorific value. Therefore, the conductive joining members 48 and 49 may be made of a material different from that of the conductive adhesive 40.
  • the conductive bonding members 48 and 49 may be, for example, solder or a conductive adhesive having a composition different from that of the conductive adhesive 40.
  • the conductive adhesive 40 contains a resin and conductive particles dispersed in the resin.
  • the resin contained in the conductive adhesive 40 is a thermosetting resin such as an epoxy resin.
  • Conductive particles are, for example, metal particles such as silver particles, nickel particles, gold particles or copper particles.
  • the shape of the conductive particles is not limited to a sphere, and may be a scale shape.
  • the conductive particles have, for example, a diameter of 1 ⁇ m or more and 10 ⁇ m or less.
  • the content of the conductive particles in the conductive adhesive 40 is, for example, 80% by weight or more. Therefore, the thermal conductivity of the conductive adhesive 40 can be increased, and the electrical resistivity of the conductive adhesive 40 can be decreased.
  • the conductive adhesive 40 includes a first conductive adhesive portion 40a and a second conductive adhesive portion 40b.
  • the first conductive adhesive portion 40a is covered with the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11. In a plan view of the main surface 11a of the lead frame 11, the first conductive adhesive portion 40a is inside the outer periphery of the semiconductor element 20. The first conductive adhesive portion 40a is located between the main surface 11a of the lead frame 11 and the back surface 20a of the semiconductor element 20.
  • the thickness t 1 of the first conductive adhesive portion 40a is, for example, 5 ⁇ m or more.
  • the thickness t 1 of the first conductive adhesive portion 40a may be, for example, 10 ⁇ m or more.
  • the thickness t 1 of the first conductive adhesive portion 40a is, for example, 30 ⁇ m or less.
  • the thickness t 1 of the first conductive adhesive portion 40a may be, for example, 20 ⁇ m or less.
  • the thickness t 1 of the first conductive adhesive portion 40a is the length of the first conductive adhesive portion 40a in the normal direction of the main surface 11a of the lead frame 11.
  • the second conductive adhesive portion 40b is exposed from the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11. In a plan view of the main surface 11a of the lead frame 11, the second conductive adhesive portion 40b is outside the outer periphery of the semiconductor element 20.
  • the second conductive adhesive portion 40b includes a first protrusion 42 separated from the side surface 20c of the semiconductor element 20, and a recess 43 between the side surface 20c of the semiconductor element 20 and the first protrusion 42.
  • the first projection 42 extends along the outer periphery of the semiconductor element 20.
  • the first projection 42 extends around the semiconductor element 20 over a length of 50% or more of the outer circumference of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the first projection 42 may extend around the semiconductor element 20 over a length of 60% or more of the outer circumference of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the first projection 42 may extend around the semiconductor element 20 over a length of 80% or more of the outer circumference of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the first projection 42 may extend around the semiconductor element 20 over the entire outer peripheral length of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the recess 43 extends along the outer periphery of the semiconductor element 20.
  • the recess 43 extends around the semiconductor element 20 over a length of 50% or more of the outer circumference of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the recess 43 may extend around the semiconductor element 20 over a length of 60% or more of the outer circumference of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the recess 43 may extend around the semiconductor element 20 over a length of 80% or more of the outer circumference of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the recess 43 may extend around the semiconductor element 20 over the entire outer peripheral length of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the first protrusion 42 faces the central portion of at least one of the plurality of sides 26a, 26b, 26c, 26d. Specifically, the first protrusion 42 faces all the central portions of the plurality of sides 26a, 26b, 26c, 26d. Specifically, the first protrusion 42 faces the central portion of the side 26a. The first protrusion 42 faces the central portion of the side 26b. The first protrusion 42 faces the central portion of the side 26c. The first protrusion 42 faces the central portion of the side 26d.
  • the central portion of the side means the central portion of the side when the side is divided into three equal parts in the length direction of the side.
  • the recess 43 faces the central portion of at least one of the plurality of sides 26a, 26b, 26c, 26d. Specifically, the recess 43 faces all the central portions of the plurality of sides 26a, 26b, 26c, 26d. Specifically, the recess 43 faces the central portion of the side 26a. The recess 43 faces the central portion of the side 26b. The recess 43 faces the central portion of the side 26c. The recess 43 faces the central portion of the side 26d.
  • the recess 43 is filled with a sealing member 36.
  • the height h 1 of the first protrusion 42 is at least twice the thickness t 1 of the first conductive adhesive portion 40a.
  • the height h 1 of the first protrusion 42 is the length from the bottom of the recess 43 to the top of the first protrusion 42 in the normal direction of the main surface 11a of the lead frame 11.
  • the first protrusion 42 is formed higher than at least one corner of the semiconductor element 20 at the central portion of at least one of the plurality of sides 26a, 26b, 26c, 26d. Specifically, the first protrusion 42 is formed higher than all the corners of the semiconductor element 20 in the central portion of all of the plurality of sides 26a, 26b, 26c, 26d. At least one corner of the semiconductor device 20 is at least one end of a plurality of sides 26a, 26b, 26c, 26d.
  • the first protrusion 42 is formed higher in the central portion of the side 26a than in the corner portion 27a of the semiconductor element 20.
  • the first protrusion 42 is formed higher in the central portion of the side 26a than the corner portion 27b of the semiconductor element 20.
  • the first protrusion 42 is formed higher in the central portion of the side 26b than in the corner portion 27b of the semiconductor element 20.
  • the first protrusion 42 is formed higher in the central portion of the side 26b than in the corner portion 27c of the semiconductor element 20.
  • the first protrusion 42 is formed higher in the central portion of the side 26c than in the corner portion 27c of the semiconductor element 20.
  • the first protrusion 42 is formed higher in the central portion of the side 26c than the corner portion 27d of the semiconductor element 20.
  • the first protrusion 42 is formed higher in the central portion of the side 26d than the corner portion 27d of the semiconductor element 20.
  • the first protrusion 42 is formed higher in the central portion of the side 26d than the corner portion 27d of the
  • the second conductive adhesive portion 40b may further include a second protrusion 44 in contact with the side surface 20c of the semiconductor element 20.
  • the recess 43 is formed between the first protrusion 42 and the second protrusion 44.
  • the first protrusion 42 may be thicker than the second protrusion 44. That is, with reference to FIG. 4, the thickness d 1 of the first protrusion 42 may be larger than the thickness d 2 of the second protrusion 44.
  • the thickness d 1 of the first protrusion 42 is the length from the main surface 11a of the lead frame 11 to the top of the first protrusion 42 in the normal direction of the main surface 11a of the lead frame 11.
  • the thickness d 2 of the second protrusion 44 is the length from the main surface 11a of the lead frame 11 to the top of the second protrusion 44 in the normal direction of the main surface 11a of the lead frame 11.
  • the second protrusion 44 is formed on the side surface 20c of the semiconductor element 20 over a length of 0.5 times or more the height H of the semiconductor element 20 (see FIG. 4) in the normal direction of the main surface 11a of the lead frame 11. May be in contact. Therefore, the heat generated in the semiconductor element 20 can be efficiently dissipated from the side surface 20c of the semiconductor element 20 to the lead frame 11 via the conductive adhesive 40.
  • the second projection 44 may come into contact with the side surface 20c of the semiconductor element 20 over a length less than the height H of the semiconductor element 20 in the normal direction of the main surface 11a of the lead frame 11.
  • the conductive adhesive 40 adheres to the front surface 20b of the semiconductor element 20 on which the first electrode 22, the second electrode 23, and the guard ring 24 are formed, and dielectric breakdown occurs in the semiconductor element 20. Can be prevented.
  • the height H of the semiconductor element 20 is the distance between the front surface 20b of the semiconductor element 20 and the back surface 20a of the semiconductor element 20 in the normal direction of the main surface 11a of the lead frame 11.
  • the sealing member 36 seals a part of the lead frame 11, the conductive adhesive 40, and the semiconductor element 20.
  • the sealing member 36 is formed of, for example, an insulating resin material selected from the group consisting of epoxy resin, polyimide resin, polyamide resin, polyamide-imide resin, fluororesin, isocyanate resin, silicone resin, or a combination thereof. ..
  • the adhesive strength between the sealing member 36 and the conductive adhesive 40 is greater than the adhesive strength between the sealing member 36 and the semiconductor element 20.
  • the sealing member 36 may be formed of the same type of resin as the resin contained in the conductive adhesive 40. Therefore, the adhesive strength between the sealing member 36 and the conductive adhesive 40 increases, and becomes larger than the adhesive strength between the sealing member 36 and the semiconductor element 20.
  • the sealing member 36 is made of the same type of resin as the resin contained in the conductive adhesive 40 means that the monomer material having the largest mole fraction among the resins of the sealing member 36 is used. It means that the molar fraction of the resin contained in the conductive adhesive 40 is the same as that of the monomer material having the largest molar fraction.
  • the sealing member 36 is made of an epoxy resin and the resin contained in the conductive adhesive 40 is an epoxy resin, the sealing member 36 is the same as the resin contained in the conductive adhesive 40. It can be said that it is made of various types of resin.
  • the portion of the sealing member 36 that fills the recess 43 is an anchor portion of the sealing member 36, and functions as an anchor of the sealing member 36 with respect to the conductive adhesive 40.
  • the adhesive strength between the conductive adhesive 40 and the sealing member 36 is increased. Therefore, for the following reasons, the conductive adhesive 40 can be prevented from peeling off from the semiconductor element 20, and cracks can be prevented from occurring in the conductive adhesive 40. The reliability of the semiconductor device 1 can be improved.
  • the first coefficient of thermal expansion of the semiconductor element 20 is smaller than the second coefficient of thermal expansion of the conductive adhesive 40 and smaller than the third coefficient of thermal expansion of the sealing member 36.
  • the difference between the first coefficient of thermal expansion of the semiconductor element 20 and the second coefficient of thermal expansion of the conductive adhesive 40 is the second coefficient of thermal expansion of the conductive adhesive 40 and the third coefficient of thermal expansion of the sealing member 36. Greater than the difference between.
  • the difference between the first thermal expansion coefficient of the semiconductor element 20 and the third thermal expansion coefficient of the sealing member 36 is the second thermal expansion coefficient of the conductive adhesive 40 and the third thermal expansion coefficient of the sealing member 36. Greater than the difference between.
  • the sealing member 36 when the sealing member 36 is peeled off from the conductive adhesive 40, it is caused by the difference between the first thermal expansion coefficient of the semiconductor element 20 and the third thermal expansion coefficient of the sealing member 36 during the operation of the semiconductor device 1. As a result, the sealing member 36 is easily peeled off from the semiconductor element 20. During the operation of the semiconductor device 1, a large thermal stress due to the difference between the first coefficient of thermal expansion of the semiconductor element 20 and the second coefficient of thermal expansion of the conductive adhesive 40 is applied to the conductive adhesive 40. .. The conductive adhesive 40 is easily peeled off from the semiconductor element 20. In addition, cracks are likely to occur in the conductive adhesive 40.
  • the sealing member 36 since the sealing member 36 is filled in the recess 43 of the conductive adhesive 40, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. Therefore, during the operation of the semiconductor device 1, the sealing member 36 continues to adhere to the conductive adhesive 40. Then, during the operation of the semiconductor device 1, the sealing member 36 continues to be in close contact with the semiconductor element 20. Since the sealing member 36 continues to be in close contact with the semiconductor element 20, and the third thermal expansion coefficient of the sealing member 36 is larger than the first thermal expansion coefficient of the semiconductor element 20, the sealing member 36 is the semiconductor element 20. Increase the effective coefficient of thermal expansion. The thermal stress applied to the conductive adhesive 40 is reduced due to the difference in the coefficient of thermal expansion between the semiconductor element 20 and the conductive adhesive 40. The conductive adhesive 40 can be prevented from peeling off from the semiconductor element 20, and cracks can be prevented from occurring in the conductive adhesive 40. The reliability of the semiconductor device 1 can be improved.
  • the manufacturing method of the semiconductor device 1 of the present embodiment includes supplying the conductive paste 40p on the main surface 11a of the lead frame 11 (S1).
  • the conductive paste 40p may be applied onto the main surface 11a of the lead frame 11 or may be ejected from a nozzle (not shown) onto the main surface 11a of the lead frame 11.
  • the area of the conductive paste 40p is smaller than the area of the semiconductor element 20.
  • the conductive paste 40p contains a resin and conductive particles dispersed in the resin.
  • the resin is a thermosetting resin such as an epoxy resin.
  • Conductive particles are, for example, metal particles such as silver particles, nickel particles, gold particles or copper particles.
  • the conductive paste 40p has, for example, a thixotropic ratio of 4.0 or more.
  • the thixotropic ratio is given by ⁇ 0.5 / ⁇ 5.0.
  • ⁇ 5.0 represents the first viscosity of the conductive paste 40p measured at a rotation speed of 5.0 rpm at a temperature of 25 ° C. using an E-type viscometer.
  • ⁇ 0.5 represents the second viscosity of the conductive paste 40p measured at a rotation speed of 0.5 rpm at a temperature of 25 ° C. using an E-type viscometer.
  • the second viscosity of the conductive paste 40p is, for example, 100 Pa ⁇ s or more.
  • the second viscosity of the conductive paste 40p may be 150 Pa ⁇ s or more, or 200 Pa ⁇ s or more. As the second viscosity of the conductive paste 40p increases, the height h 1 of the first protrusion 42 can be made larger.
  • the manufacturing method of the semiconductor device 1 of the present embodiment includes moving the semiconductor element 20 toward the main surface 11a of the lead frame 11 (S2). Therefore, a part of the conductive paste 40p is expanded to the outside of the outer periphery of the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11.
  • the semiconductor element 20 is held by a holder 50 such as a suction collet.
  • the holder 50 is moved to move the semiconductor element 20 above the conductive paste 40p.
  • the entire conductive paste 40p is covered with the semiconductor element 20. That is, in the plan view of the main surface 11a of the lead frame 11, all the outer circumferences of the conductive paste 40p supplied on the main surface 11a of the lead frame 11 are inside the outer circumference of the semiconductor element 20.
  • the holder 50 is moved toward the main surface 11a of the lead frame 11, and the semiconductor element 20 held by the holder 50 is directed toward the main surface 11a of the lead frame 11. And move it.
  • the moving speed of the semiconductor element 20 is, for example, 10 mm / s or more and 30 mm / s.
  • the back surface 20a of the semiconductor element 20 comes into contact with the conductive paste 40p.
  • the conductive paste 40p has a high thixotropic ratio (for example, a thixotropic ratio of 4.0 or more), and the moving speed of the semiconductor element 20 is high.
  • the viscosity of the conductive paste 40p is relatively low while the semiconductor element 20 is moved toward the main surface 11a of the lead frame 11 and the semiconductor element 20 is in contact with the conductive paste 40p.
  • the moving speed of the semiconductor element 20 is 10 mm / s or more, the viscosity of the conductive paste 40p during the movement of the semiconductor element 20 can be more reliably lowered.
  • a part of the conductive paste 40p is spread outside the outer periphery of the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11.
  • the conductive paste 40p spreads along the main surface 11a of the lead frame 11 in a direction away from the semiconductor element 20, and the main surface 11a of the lead frame 11 Inflates in the direction perpendicular to.
  • a part of the conductive paste 40p is further expanded to the outside of the outer periphery of the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11.
  • the conductive paste 40p is formed with the first protrusion 42 separated from the side surface 20c of the semiconductor element 20 and the recess 43 between the side surface 20c of the semiconductor element 20 and the first protrusion 42.
  • a part of the conductive paste 40p may crawl up to the side surface 20c of the semiconductor device 20.
  • the second projection 44 in contact with the side surface 20c of the semiconductor element 20 is formed on the conductive paste 40p.
  • the recess 43 is formed between the first protrusion 42 and the second protrusion 44.
  • the manufacturing method of the semiconductor device 1 of the present embodiment stops moving the semiconductor element 20 toward the main surface 11a of the lead frame 11 (S3). To prepare for. Specifically, it stops moving the holder 50 toward the main surface 11a of the lead frame 11.
  • the conductive paste 40p has a high thixotropic ratio (for example, a thixotropic ratio of 4.0 or more). Therefore, by stopping the movement of the semiconductor element 20 toward the main surface 11a of the lead frame 11, the viscosity of the conductive paste 40p rapidly increases. The change in the shape of the conductive paste 40p stops.
  • the manufacturing method of the semiconductor device 1 of the present embodiment includes curing the conductive paste 40p (S4).
  • the resin contained in the conductive paste 40p is, for example, a thermosetting resin
  • heat is applied to the conductive paste 40p.
  • the conductive paste 40p is cured to become the conductive adhesive 40.
  • the first protrusion 42 of the conductive paste 40p becomes the first protrusion 42 of the conductive adhesive 40.
  • the concave portion 43 of the conductive paste 40p becomes the concave portion 43 of the conductive adhesive 40.
  • the second protrusion 44 of the conductive paste 40p becomes the second protrusion 44 of the conductive adhesive 40.
  • the manufacturing method of the semiconductor device 1 of the present embodiment includes providing the sealing member 36 (S5).
  • the sealing member 36 seals a part of the lead frame 11, the conductive adhesive 40, and the semiconductor element 20.
  • the sealing member 36 is formed using a transfer molding method or a compression molding method.
  • the recess 43 of the conductive adhesive 40 is filled with the sealing member 36.
  • the lead frame 11 may be placed on a cooling plate (not shown). By placing the lead frame 11 on the cooling plate, the viscosity of the conductive paste 40p on the lead frame 11 is increased.
  • the height h 1 of the first protrusion 42 (see FIG. 4) can be increased to increase the adhesive strength between the conductive adhesive 40 and the sealing member 36.
  • a semiconductor device 1a as a modification of the present embodiment will be described with reference to FIG.
  • the second projection 44 is not formed on the conductive adhesive 40.
  • the second projection 44 may not be formed on the conductive adhesive 40.
  • the semiconductor device 1, 1a of the present embodiment includes a lead frame 11, a conductive adhesive 40, a semiconductor element 20, and a sealing member 36.
  • the lead frame 11 includes a main surface 11a.
  • the conductive adhesive 40 contains a resin and conductive particles dispersed in the resin.
  • the semiconductor element 20 is fixed on the main surface 11a of the lead frame 11 by using the conductive adhesive 40.
  • the sealing member 36 seals a part of the lead frame 11, the conductive adhesive 40, and the semiconductor element 20.
  • the semiconductor element 20 includes a back surface 20a facing the main surface 11a of the lead frame 11, a front surface 20b opposite to the back surface 20a, and a side surface 20c connecting the back surface 20a and the front surface 20b.
  • the conductive adhesive 40 is the first conductive adhesive portion 40a covered with the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11, and the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11. Includes a second conductive adhesive portion 40b exposed from.
  • the second conductive adhesive portion 40b includes a first protrusion 42 separated from the side surface 20c of the semiconductor element 20, and a recess 43 between the side surface 20c of the semiconductor element 20 and the first protrusion 42.
  • the first projection 42 extends around the semiconductor element 20 over a length of 50% or more of the outer circumference of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the recess 43 is filled with a sealing member 36.
  • the sealing member 36 Since the sealing member 36 is filled in the concave portion 43 of the conductive adhesive 40, the adhesive strength between the conductive adhesive 40 and the sealing member 36 is increased. Therefore, during the operation of the semiconductor devices 1, 1a, the sealing member 36 keeps in close contact with the conductive adhesive 40, and the sealing member 36 keeps in close contact with the semiconductor element 20. During the operation of the semiconductor devices 1, 1a, the thermal stress applied to the conductive adhesive 40 is reduced. It is possible to prevent the conductive adhesive 40 from peeling off from the semiconductor element 20 and the occurrence of cracks in the conductive adhesive 40. The reliability of the semiconductor devices 1, 1a can be improved.
  • the outer periphery of the semiconductor element 20 is formed by a plurality of sides 26a, 26b, 26c, 26d.
  • the first protrusion 42 faces the central portion of at least one of the plurality of sides 26a, 26b, 26c, and 26d. Therefore, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. The reliability of the semiconductor devices 1, 1a can be improved.
  • the outer periphery of the semiconductor element 20 is formed by a plurality of sides 26a, 26b, 26c, 26d.
  • the first protrusion 42 faces all the central portions of the plurality of sides 26a, 26b, 26c, and 26d. Therefore, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. The reliability of the semiconductor devices 1, 1a can be improved.
  • the first height (height h 1 ) of the first protrusion 42 is at least twice the thickness t 1 of the first conductive adhesive portion 40a. Therefore, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. The reliability of the semiconductor devices 1, 1a can be improved.
  • the thickness t 1 of the first conductive adhesive portion 40a is 5 ⁇ m or more and 30 ⁇ m or less.
  • the thickness t 1 of the first conductive adhesive portion 40a is 5 ⁇ m or more. Therefore, even if a thermal stress is applied to the first conductive adhesive portion 40a, the first conductive adhesive portion 40a is peeled off from the lead frame 11 and the semiconductor element 20, and the first conductive adhesive portion 40a is cracked. Can be prevented from occurring.
  • the thickness t 1 of the first conductive adhesive portion 40a is 30 ⁇ m or less. Therefore, the thermal resistance and the electric resistance of the first conductive adhesive portion 40a are reduced.
  • the heat generated from the semiconductor element 20 during the operation of the semiconductor devices 1, 1a can be efficiently dissipated from the back surface 20a of the semiconductor element 20 to the lead frame 11 via the first conductive adhesive portion 40a.
  • the reliability of the semiconductor devices 1, 1a can be improved. Further, a large amount of current can be passed through the semiconductor element 20.
  • the power capacity of the semiconductor devices 1, 1a can be increased.
  • the second conductive adhesive portion 40b further includes a second protrusion 44 in contact with the side surface 20c of the semiconductor element 20.
  • the recess 43 is formed between the first protrusion 42 and the second protrusion 44. Therefore, the heat generated from the semiconductor element 20 during the operation of the semiconductor device 1 can be efficiently dissipated from the side surface 20c of the semiconductor element 20 to the lead frame 11 via the second conductive adhesive portion 40b. The reliability of the semiconductor device 1 can be improved.
  • the first protrusion 42 is thicker than the second protrusion 44. Therefore, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. The reliability of the semiconductor device 1 can be improved.
  • the second projection 44 is 0.5 times or more the second height (height H) of the semiconductor element 20 in the normal direction of the main surface 11a of the lead frame 11. It is in contact with the side surface 20c of the semiconductor element 20 over a length of less than 0 times.
  • the second protrusion 44 is formed on the side surface 20c of the semiconductor element 20 over a length of 0.5 times or more the second height (height H) of the semiconductor element 20 in the normal direction of the main surface 11a of the lead frame 11. Are in contact. Therefore, the heat generated from the semiconductor element 20 during the operation of the semiconductor device 1 can be efficiently dissipated from the side surface 20c of the semiconductor element 20 to the lead frame 11 via the second conductive adhesive portion 40b. Further, the second protrusion 44 is a side surface of the semiconductor element 20 over a length of less than 1.0 times the second height (height H) of the semiconductor element 20 in the normal direction of the main surface 11a of the lead frame 11. It is in contact with 20c. Therefore, it is possible to prevent the conductive adhesive 40 from adhering to the front surface 20b of the semiconductor element 20 and causing dielectric breakdown in the semiconductor element 20. The reliability of the semiconductor device 1 can be improved.
  • the adhesive strength between the conductive adhesive and the sealing member is larger than the adhesive strength between the sealing member and the semiconductor element. Therefore, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. The reliability of the semiconductor device 1 can be improved.
  • the sealing member is made of the same type of resin as the resin. Therefore, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. The reliability of the semiconductor devices 1, 1a can be improved.
  • the content of the conductive particles in the conductive adhesive 40 is 80% by weight or more. Therefore, the thermal conductivity of the conductive adhesive 40 increases, and the electrical resistance of the conductive adhesive 40 decreases.
  • the heat generated from the semiconductor element 20 during the operation of the semiconductor devices 1, 1a can be efficiently dissipated to the lead frame 11 via the conductive adhesive 40.
  • the reliability of the semiconductor devices 1, 1a can be improved. Further, a large amount of current can be passed through the semiconductor element 20.
  • the power capacity of the semiconductor devices 1, 1a can be increased.
  • the area of the semiconductor element 20 is 5 mm 2 or less in the plan view of the main surface 11a of the lead frame 11. Therefore, the area ratio of the side surface 20c of the semiconductor element 20 to the front surface 20b or the back surface 20a of the semiconductor element 20 increases.
  • the second conductive adhesive portion 40b comes into contact with the side surface 20c of the semiconductor element 20
  • the heat generated from the semiconductor element 20 during the operation of the semiconductor device 1 is generated not only from the back surface 20a of the semiconductor element 20 but also from the semiconductor element 20. Also from the side surface 20c of the above, it can be efficiently dissipated to the lead frame 11 via the conductive adhesive 40. The reliability of the semiconductor device 1 can be improved.
  • the first projection 42 is more located at the center of at least one of the plurality of sides 26a, 26b, 26c, 26d than at least one corner of the semiconductor element 20. It is formed high. At least one corner of the semiconductor device 20 is at least one end of a plurality of sides 26a, 26b, 26c, 26d. Therefore, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. The reliability of the semiconductor devices 1, 1a can be improved.
  • the manufacturing method of the semiconductor devices 1 and 1a of the present embodiment includes supplying the conductive paste 40p on the main surface 11a of the lead frame 11 (S1).
  • the conductive paste 40p contains a resin and conductive particles dispersed in the resin.
  • the semiconductor element 20 is moved toward the main surface 11a of the lead frame 11 (S2), whereby a part of the conductive paste 40p is transferred to the lead frame.
  • the main surface 11a of 11 is provided with an extension to the outside of the outer periphery of the semiconductor element 20 in a plan view.
  • the semiconductor element 20 is stopped from being moved toward the main surface 11a of the lead frame 11 (S3), whereby the viscosity of the conductive paste 40p is increased. It is provided to increase and stop the change in the shape of the conductive paste 40p.
  • the method for manufacturing the semiconductor devices 1 and 1a of the present embodiment is to cure the conductive paste 40p (S4) to make the conductive paste 40p into the conductive adhesive 40, and to form a part of the lead frame 11 and the conductivity.
  • a sealing member 36 for sealing the sex adhesive 40 and the semiconductor element 20 is provided (S5).
  • the semiconductor element 20 includes a back surface 20a facing the main surface 11a of the lead frame 11, a front surface 20b opposite to the back surface 20a, and a side surface 20c connecting the back surface 20a and the front surface 20b.
  • the semiconductor element 20 is fixed on the main surface 11a of the lead frame 11 by using the conductive adhesive 40.
  • the conductive adhesive 40 is the first conductive adhesive portion 40a covered with the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11, and the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11. Includes a second conductive adhesive portion 40b exposed from.
  • the second conductive adhesive portion 40b includes a first protrusion 42 separated from the side surface 20c of the semiconductor element 20, and a recess 43 between the side surface 20c of the semiconductor element 20 and the first protrusion 42.
  • the first projection 42 extends around the semiconductor element 20 over a length of 50% or more of the outer circumference of the semiconductor element 20 in a plan view of the main surface 11a of the lead frame 11.
  • the recess 43 is filled with a sealing member 36.
  • the sealing member 36 Since the sealing member 36 is filled in the concave portion 43 of the conductive adhesive 40, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. Therefore, during the operation of the semiconductor devices 1, 1a, the sealing member 36 keeps in close contact with the conductive adhesive 40, and the sealing member 36 keeps in close contact with the semiconductor element 20. During the operation of the semiconductor devices 1, 1a, the thermal stress applied to the conductive adhesive 40 is reduced. It is possible to prevent the conductive adhesive 40 from peeling off from the semiconductor element 20 and the occurrence of cracks in the conductive adhesive 40. According to the method for manufacturing the semiconductor device 1,1a of the present embodiment, the semiconductor device 1,1a having improved reliability can be obtained.
  • the recess 43 can be formed in the conductive adhesive 40 by the steps S2 to S4. No additional steps are required to form the recess 43 in the conductive adhesive 40, such as etching the conductive adhesive 40. Therefore, the manufacturing method of the semiconductor devices 1, 1a of the present embodiment has high productivity.
  • the outer periphery of the semiconductor element 20 is formed by a plurality of sides 26a, 26b, 26c, 26d.
  • the first protrusion 42 faces the central portion of at least one of the plurality of sides 26a, 26b, 26c, and 26d. Therefore, the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. According to the method for manufacturing the semiconductor device 1,1a of the present embodiment, the semiconductor device 1,1a having improved reliability can be obtained. Further, the manufacturing method of the semiconductor devices 1 and 1a of the present embodiment has high productivity.
  • the conductive paste 40p has a thixotropic ratio of 4.0 or more.
  • the thixotropic ratio is given by ⁇ 0.5 / ⁇ 5.0.
  • ⁇ 5.0 represents the first viscosity of the conductive paste 40p measured at a rotation speed of 5.0 rpm at a temperature of 25 ° C. using an E-type viscometer.
  • ⁇ 0.5 represents the second viscosity of the conductive paste 40p measured at a rotation speed of 0.5 rpm at a temperature of 25 ° C. using an E-type viscometer.
  • the adhesive strength between the conductive adhesive 40 and the sealing member 36 increases. According to the method for manufacturing the semiconductor device 1,1a of the present embodiment, the semiconductor device 1,1a having improved reliability can be obtained. Further, the manufacturing method of the semiconductor devices 1 and 1a of the present embodiment has high productivity.
  • the second viscosity of the conductive paste 40p is 100 Pa ⁇ s or more.
  • the first height (height h 1 ) of the first protrusion 42 increases.
  • the adhesive strength between the conductive adhesive 40 and the sealing member 36 is increased. Further, it is possible to prevent the conductive paste 40p from crawling up the side surface 20c of the semiconductor element 20 and adhering to the front surface 20b of the semiconductor element 20 to cause dielectric breakdown in the semiconductor element 20. According to the method for manufacturing the semiconductor device 1,1a of the present embodiment, the semiconductor device 1,1a having improved reliability can be obtained.
  • Embodiment 2 The semiconductor device 1b of the second embodiment will be described with reference to FIG.
  • the semiconductor device 1b of the present embodiment has the same configuration as the semiconductor device 1 of the first embodiment, but is mainly different in the following points.
  • the semiconductor element 20 further includes a back surface protrusion 28.
  • the back surface protrusion 28 protrudes from the back surface 20a of the semiconductor element 20. Specifically, the back surface protrusion 28 projects from the outer edge of the back surface 20a of the semiconductor element 20.
  • the back surface protrusion 28 may extend over the entire outer edge of the back surface 20a of the semiconductor element 20.
  • the back surface protrusion 28 is, for example, a part of the metallized layer 25 of the semiconductor element 20.
  • the back surface protrusion 28 is in contact with the main surface 11a of the lead frame 11.
  • the back surface protrusion 28 increases the height of the front surface 20b of the semiconductor element 20 from the main surface 11a of the lead frame 11.
  • the back surface protrusion 28 can prevent the conductive adhesive 40 from adhering to the front surface 20b of the semiconductor element 20.
  • the height h 2 of the back surface projection 28 defines a gap between the back surface 20a of the semiconductor element 20 and the main surface 11a of the lead frame 11.
  • the height h 2 of the back surface protrusion 28 defines the thickness t 1 of the first conductive adhesive portion 40a.
  • a method for manufacturing the semiconductor device 1b according to the second embodiment will be described with reference to FIGS. 13 to 18.
  • the manufacturing method of the semiconductor device 1b of the present embodiment includes the same steps as the manufacturing method of the semiconductor device 1 of the first embodiment, but is mainly different in the following points.
  • the method for manufacturing the semiconductor device 1b of the present embodiment further includes forming a back surface protrusion 28 on the semiconductor element 20 (S1a).
  • the back surface protrusion 28 protrudes from the back surface 20a of the semiconductor element 20. Specifically, the back surface protrusion 28 projects from the outer edge of the back surface 20a of the semiconductor element 20.
  • the back surface protrusion 28 is formed, for example, when the semiconductor substrate 21 on which a plurality of semiconductor elements 20 are formed is individualized by using a dancing blade.
  • the back surface protrusion 28 is, for example, a burr formed on the metallized layer 25 when the semiconductor substrate 21 is individualized.
  • the thickness t 2 of the metallized layer 25 see FIG. 12
  • the height h 2 (see FIG. 12) of 10 ⁇ m or more and 20 ⁇ m or less is used when the semiconductor substrate 21 is fragmented.
  • the back surface projection 28 to have is formed.
  • step S3 of the method for manufacturing the semiconductor device 1b of the present embodiment as shown in FIGS. 17 and 18, the back surface projection 28 abuts on the main surface 11a of the lead frame 11 to lead the semiconductor element 20 to the lead frame 11. It is stopped to move toward the main surface 11a of the.
  • the back surface projection 28 comes into contact with the main surface 11a of the lead frame 11, the moving speed of the semiconductor element 20 suddenly becomes zero.
  • the viscosity of the conductive paste 40p increases sharply.
  • the first protrusion 42 becomes even higher.
  • the back surface protrusion 28 prevents an excessive amount of the conductive paste 40p from being spread outside the outer periphery of the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11.
  • the back surface protrusion 28 can prevent the conductive paste 40p from crawling up the side surface 20c of the semiconductor element 20 and adhering the conductive paste 40p to the front surface 20b of the semiconductor element 20.
  • the area of the semiconductor element 20 may be 5 mm 2 or less in the plan view of the main surface 11a of the lead frame 11.
  • the viscosity of the conductive paste 40p is lowered to spread the conductive paste 40p onto the main surface 11a of the lead frame 11.
  • the force applied to the element 20 becomes smaller.
  • the width of the back surface protrusion 28 formed when the semiconductor substrate 21 is fragmented does not change regardless of the area of the semiconductor element 20.
  • the area ratio occupied by the back surface projection 28 in the back surface 20a of the semiconductor element 20 increases.
  • the semiconductor device 1b of the present embodiment and the manufacturing method thereof have the following effects in addition to the effects of the semiconductor device 1 of the first embodiment and the manufacturing method thereof.
  • the semiconductor element 20 further includes a back surface protrusion 28.
  • the back surface protrusion 28 protrudes from the back surface 20a of the semiconductor element 20 and is in contact with the main surface 11a of the lead frame 11. Therefore, the back surface protrusion 28 prevents the conductive adhesive 40 from adhering to the front surface 20b of the semiconductor element 20 and causing dielectric breakdown in the semiconductor element 20. The reliability of the semiconductor device 1b can be improved.
  • the area of the semiconductor element 20 is 5 mm 2 or less in the plan view of the main surface 11a of the lead frame 11. Therefore, when the back surface protrusion 28 is brought into contact with the main surface 11a of the lead frame 11, the back surface protrusion 28 is prevented from being deformed or destroyed.
  • the semiconductor element 20 further includes a back surface protrusion 28 protruding from the back surface 20a.
  • the semiconductor element 20 is stopped from moving toward the main surface 11a (S3).
  • the back surface protrusion 28 When the back surface protrusion 28 comes into contact with the main surface 11a of the lead frame 11, the movement of the semiconductor element 20 suddenly becomes zero. The viscosity of the conductive paste 40p increases sharply. The first protrusion 42 becomes even higher. The adhesive strength between the conductive adhesive 40 and the sealing member 36 is increased. The reliability of the semiconductor device 1b can be improved. Further, the back surface protrusion 28 prevents an excessive amount of the conductive paste 40p from being spread outside the outer periphery of the semiconductor element 20 in the plan view of the main surface 11a of the lead frame 11. The back surface projection 28 can prevent the conductive paste 40p from crawling up the side surface 20c of the semiconductor element 20 and adhering to the front surface 20b of the semiconductor element 20. The reliability of the semiconductor device 1b can be improved.
  • the area of the semiconductor element 20 is 5 mm 2 or less in the plan view of the main surface 11a of the lead frame 11. Therefore, when the back surface protrusion 28 comes into contact with the main surface 11a of the lead frame 11, the back surface protrusion 28 is prevented from being deformed or destroyed.
  • Embodiment 3 The semiconductor device 1c of the third embodiment will be described with reference to FIGS. 19 to 22.
  • the semiconductor device 1c of the present embodiment has the same configuration as the semiconductor device 1b of the second embodiment, but is mainly different in the following points.
  • the first projection 42 is higher at at least one corner of the semiconductor device 20 than at the center of at least one of the plurality of sides 26a, 26b, 26c, 26d. It is formed. At least one corner of the semiconductor device 20 is at least one end of a plurality of sides 26a, 26b, 26c, 26d. Specifically, the first projection 42 is formed higher at all the corner portions 27a, 27b, 27c, 27d of the semiconductor element 20 than at all the central portions of the plurality of sides 26a, 26b, 26c, 26d. There is.
  • the first protrusion 42 is formed higher at the corner portion 27a of the semiconductor element 20 than at the central portion of the side 26a.
  • the first protrusion 42 is formed higher at the corner portion 27b of the semiconductor element 20 than at the central portion of the side 26a.
  • the first protrusion 42 is formed higher at the corner portion 27b of the semiconductor element 20 than at the central portion of the side 26b.
  • the first protrusion 42 is formed higher at the corner portion 27c of the semiconductor element 20 than at the central portion of the side 26b.
  • the first protrusion 42 is formed higher at the corner portion 27c of the semiconductor element 20 than at the central portion of the side 26c.
  • the first protrusion 42 is formed higher at the corner portion 27d of the semiconductor element 20 than at the central portion of the side 26c.
  • the first protrusion 42 is formed higher at the corner portion 27d of the semiconductor element 20 than at the central portion of the side 26d.
  • the first protrusion 42 is formed higher at the corner portion 27a of the semiconductor element 20 than at the
  • the back surface protrusion 28 is the back surface 20a of the semiconductor element 20 excluding at least one corner portion of the semiconductor element 20 from at least one corner portion of the semiconductor element 20. It is formed higher on the outer edge.
  • the back surface protrusion 28 may not be provided at at least one corner of the semiconductor element 20.
  • the back surface projection 28 is formed higher than all the corners of the semiconductor element 20 on the outer edge of the back surface 20a of the semiconductor element 20 excluding all the corners of the semiconductor element 20.
  • the back surface protrusion 28 may not be provided at all the corners of the semiconductor element 20.
  • the back surface protrusion 28 includes a first back surface protrusion portion 28a, a second back surface protrusion portion 28b, a third back surface protrusion portion 28c, and a fourth back surface protrusion portion 28d.
  • the first back surface protrusion portion 28a is provided only in the central portion of the side 26a.
  • the first back surface protruding portion 28a is not provided on the corner portion 27a which is one end of the side 26a and the corner portion 27b which is the other end of the side 26a.
  • the second back surface protrusion portion 28b is provided only in the central portion of the side 26b.
  • the second back surface protrusion portion 28b is not provided on the corner portion 27b which is one end of the side 26b and the corner portion 27c which is the other end of the side 26b.
  • the third back surface protrusion portion 28c is provided only in the central portion of the side 26c.
  • the third back surface protrusion portion 28c is not provided on the corner portion 27c which is one end of the side 26c and the corner portion 27d which is the other end of the side 26c.
  • the fourth back surface protrusion portion 28d is provided only in the central portion of the side 26d.
  • the fourth back surface projection portion 28d is not provided on the corner portion 27d which is one end of the side 26d and the corner portion 27a which is the other end of the side 26a.
  • At least one of the plurality of back surface protrusion portions (first back surface protrusion portion 28a, second back surface protrusion portion 28b, third back surface protrusion portion 28c, and fourth back surface protrusion portion 28d) is provided with at least one of the plurality of back surface protrusion portions. It is separated from at least one corner of the semiconductor element 20, which is the end of the side, by 0.25 times or more and 0.45 times or less the length of the side on which at least one of the plurality of back surface protrusions is provided. May be.
  • the volume of the second conductive adhesive portion 40b extending to the outer periphery of the semiconductor element 20 can be increased.
  • the first projection 42 may be formed higher. Since at least one of the plurality of back surface protrusions is separated from at least one corner of the semiconductor element 20 by 0.45 times or more the length of the side provided with at least one of the plurality of back surface protrusions.
  • the plurality of back surface protrusion portions are all corner portions 27a of the semiconductor element 20.
  • 27b, 27c, 27d may be separated from the lengths of the sides 26a, 26b, 26c, 26d provided with the plurality of back surface protrusions by 0.25 times or more and 0.45 times or less.
  • the first back surface projection portion 28a is separated from the corner portion 27a by 0.25 times or more and 0.45 times or less the length of the side 26a.
  • the first back surface protruding portion 28a is separated from the corner portion 27b by 0.25 times or more and 0.45 times or less the length of the side 26a.
  • the second back surface protruding portion 28b is separated from the corner portion 27b by 0.25 times or more and 0.45 times or less the length of the side 26b.
  • the second back surface protruding portion 28b is separated from the corner portion 27c by 0.25 times or more and 0.45 times or less the length of the side 26b.
  • the third back surface protruding portion 28c is separated from the corner portion 27c by 0.25 times or more and 0.45 times or less the length of the side 26c.
  • the third back surface protrusion portion 28c is separated from the corner portion 27d by 0.25 times or more and 0.45 times or less the length of the side 26c.
  • the fourth back surface protruding portion 28d is separated from the corner portion 27d by 0.25 times or more and 0.45 times or less the length of the side 26d.
  • the fourth back surface protruding portion 28d is separated from the corner portion 27d by 0.25 times or more and 0.45 times or less the length of the side 26d.
  • the manufacturing method of the semiconductor device 1c of the present embodiment includes the same steps as the manufacturing method of the semiconductor device 1b of the second embodiment, but is mainly different in the following points.
  • the back surface protrusion 28 is formed on the back surface 20a of the semiconductor element 20 excluding at least one corner portion of the semiconductor element 20 from at least one corner portion of the semiconductor element 20. It is formed higher on the outer edge.
  • the back surface protrusion 28 may not be provided at at least one corner of the semiconductor element 20.
  • the back surface protrusion 28 is the back surface 20a of the semiconductor element 20 excluding all the corner portions 27a, 27b, 27c, 27d of the semiconductor element 20 from all the corner portions 27a, 27b, 27c, 27d of the semiconductor element 20. It is formed higher on the outer edge of the.
  • the back surface protrusion 28 may not be provided on all the corner portions 27a, 27b, 27c, 27d of the semiconductor element 20.
  • the back surface protrusion 28 can be formed higher on the outer edge of the back surface 20a of the semiconductor element 20 excluding the two corners. For example, by increasing the feed rate of the dicing blade at the central portion of the outer peripheral side of the semiconductor element 20, a relatively high back surface protrusion 28 is formed at the central portion of the outer peripheral side of the semiconductor element 20.
  • relatively low back surface protrusions 28 are formed on the corners 27a, 27b, 27c, 27d of the semiconductor element 20, or the semiconductor element 20 is formed.
  • the back surface protrusion 28 is not formed on the corners 27a, 27b, 27c, 27d of the above.
  • the back surface protrusion 28 functions as a weir that prevents the conductive paste 40p from spreading to the outside of the outer periphery of the semiconductor element 20. Therefore, more conductive paste 40p is formed at the corners 27a, 27b, 27c, 27d of the semiconductor device 20 than at the center of each of the plurality of sides 26a, 26b, 26c, 26d forming the outer periphery of the semiconductor device 20. Is expanded to the outside of the outer periphery of the semiconductor element 20.
  • the first protrusion 42 of the conductive paste 40p is formed higher at at least one corner of the semiconductor element 20 than at the center of at least one of the plurality of sides 26a, 26b, 26c, 26d.
  • the first projection 42 of the conductive paste 40p is formed at all the corner portions 27a, 27b, 27c, 27d of the semiconductor element 20 from all the central portions of the plurality of sides 26a, 26b, 26c, 26d. Formed higher.
  • the first projection 42 of the conductive adhesive 40 obtained in step S4 of the manufacturing method of the semiconductor device 1c of the present embodiment is a semiconductor from at least one central portion of a plurality of sides 26a, 26b, 26c, 26d. It is formed higher at at least one corner of the element 20. Specifically, the first projection 42 of the conductive adhesive 40 is formed at all the corner portions 27a, 27b, 27c, 27d of the semiconductor element 20 from all the central portions of the plurality of sides 26a, 26b, 26c, 26d. , Formed higher.
  • the semiconductor device 1c of the present embodiment and the manufacturing method thereof have the following effects in addition to the effects of the semiconductor device 1b of the second embodiment and the manufacturing method thereof.
  • the back surface protrusion 28 protrudes from the outer edge of the back surface 20a of the semiconductor element 20, and at least one corner portion of the semiconductor element 20 is projected from at least one corner portion of the semiconductor element 20. It is formed higher at the outer edge of the back surface 20a of the semiconductor element 20 excluding.
  • the first protrusion 42 is formed higher at at least one corner of the semiconductor element 20 than at the center of at least one of the plurality of sides 26a, 26b, 26c, 26d. At least one corner of the semiconductor device 20 is at least one end of a plurality of sides 26a, 26b, 26c, 26d.
  • the thermal stress applied to the conductive adhesive 40 is concentrated on the portion of the conductive adhesive 40 that comes into contact with the corners 27a, 27b, 27c, 27d of the semiconductor element 20.
  • the first projection 42 is formed higher at at least one corner of the semiconductor element 20 than at the center of at least one of the plurality of sides 26a, 26b, 26c, 26d. Therefore, the adhesive strength between at least one corner of the semiconductor element 20 and the conductive adhesive 40 is increased. It is possible to prevent the conductive adhesive 40 from peeling off from at least one corner of the semiconductor element 20 and from causing cracks in the conductive adhesive 40. The reliability of the semiconductor device 1c can be improved.
  • the back surface protrusion 28 protrudes from the outer edge of the back surface 20a of the semiconductor element 20, and at least one of the semiconductor elements 20 is formed from at least one corner of the semiconductor element 20. It is formed higher at the outer edge of the back surface 20a of the semiconductor element 20 excluding the two corners.
  • the thermal stress applied to the conductive adhesive 40 is concentrated on the portion of the conductive adhesive 40 that comes into contact with the corners 27a, 27b, 27c, 27d of the semiconductor element 20.
  • the back surface protrusion 28 is formed from at least one corner of the semiconductor element 20 at the outer edge of the back surface 20a of the semiconductor element 20 excluding at least one corner of the semiconductor element 20. It is formed high. Therefore, the first protrusion 42 can be formed higher at at least one corner of the semiconductor element 20 than at the center of at least one of the plurality of sides 26a, 26b, 26c, and 26d. The adhesive strength between at least one corner of the semiconductor device 20 and the conductive adhesive 40 is increased.
  • the conductive adhesive 40 can be prevented from peeling off from at least one corner of the semiconductor element 20, and cracks can be prevented from occurring in the conductive adhesive 40. According to the method for manufacturing the semiconductor device 1c according to the present embodiment, the semiconductor device 1c having improved reliability can be obtained.
  • Embodiment 4 the semiconductor devices 1, 1a, 1b, 1c of the above-described first to third embodiments are applied to a power conversion device.
  • the present disclosure is not limited to the specific power conversion device, the case where the semiconductor devices 1, 1a, 1b, 1c of the present disclosure are applied to the three-phase inverter will be described below as the fourth embodiment.
  • the power conversion system shown in FIG. 23 is composed of a power supply 100, a power conversion device 200, and a load 300.
  • the power supply 100 is a DC power supply, and supplies DC power to the power conversion device 200.
  • the power supply 100 is not particularly limited, but may be composed of, for example, a DC system, a solar cell, or a storage battery, or may be composed of a rectifier circuit or an AC / DC converter connected to an AC system.
  • the power supply 100 may be configured by a DC / DC converter that converts the DC power output from the DC system into another DC power.
  • the power conversion device 200 is a three-phase inverter connected between the power supply 100 and the load 300, converts the DC power supplied from the power supply 100 into AC power, and supplies the AC power to the load 300. As shown in FIG. 23, the power conversion device 200 has a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201. It is equipped with 203.
  • the load 300 is a three-phase electric motor driven by AC power supplied from the power conversion device 200.
  • the load 300 is not limited to a specific application, and is an electric motor mounted on various electric devices.
  • the load 300 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railroad vehicle, an elevator, or an air conditioner.
  • the main conversion circuit 201 includes a switching element (not shown) and a freewheeling diode (not shown). By switching the voltage supplied from the power supply 100 by the switching element, the main conversion circuit 201 converts the DC power supplied from the power supply 100 into AC power and supplies it to the load 300.
  • the main conversion circuit 201 of the present embodiment is a two-level three-phase full bridge circuit, and is opposite to the six switching elements and each switching element. It may consist of six freewheeling diodes in parallel.
  • each switching element and each freewheeling diode of the main conversion circuit 201 is included in the semiconductor device 202 corresponding to the semiconductor devices 1, 1a, 1b, 1c according to any one of the above-described first to third embodiments. It is a switching element or a freewheeling diode.
  • the six switching elements are connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. Then, the output terminals of each upper and lower arm, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.
  • the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element.
  • the drive circuit may be built in the semiconductor device 202 or may be provided outside the semiconductor device 202.
  • the drive circuit generates a drive signal for driving the switching element of the main conversion circuit 201, and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 201.
  • a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of each switching element.
  • the drive signal When the switching element is kept on, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is kept off, the drive signal is a voltage equal to or lower than the threshold voltage of the switching element. It becomes a signal (off signal).
  • the control circuit 203 controls the switching element of the main conversion circuit 201 so that electric power is supplied to the load 300. Specifically, the time (on time) in which each switching element of the main conversion circuit 201 should be in the on state is calculated based on the electric power to be supplied to the load 300.
  • the main conversion circuit 201 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output to the load 300.
  • a control command is output to the drive circuit provided in the main conversion circuit 201 so that an on signal is output to the switching element that should be turned on at each time point and an off signal is output to the switching element that should be turned off. Is output.
  • the drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.
  • any of the semiconductor devices 1, 1a, 1b, 1c of the first to third embodiments is applied. Therefore, the reliability of the power conversion device can be improved.
  • the present disclosure is not limited to this, and can be applied to various power conversion devices.
  • a two-level power conversion device is used, but a three-level power conversion device or a multi-level power conversion device may be used.
  • the present disclosure may apply to a single-phase inverter.
  • the present disclosure may apply to a DC / DC converter or an AC / DC converter when the power converter supplies power to a DC load or the like.
  • the power conversion device to which the present disclosure is applied is not limited to the case where the above-mentioned load is an electric motor, and is used, for example, as a power supply device for an electric discharge machine, a laser machine, an induction heating cooker, or a contactless power supply system. It can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.
  • 1,1a, 1b, 1c semiconductor device 11,12,13 lead frame, 11a main surface, 20 semiconductor element, 20a back surface, 20b front surface, 20c side surface, 21 semiconductor substrate, 22 first electrode, 23 second Electrode, 24 guard ring, 25 metallized layer, 26a, 26b, 26c, 26d side, 27a, 27b, 27c, 27d corner, 28 back surface protrusion, 28a first back surface protrusion part, 28b second back surface protrusion part, 28c third Back surface protrusion part, 28d 4th back surface protrusion part, 30 IC chip, 31 conductive wire, 33 electronic parts, 36 sealing member, 40 conductive adhesive, 40a first conductive adhesive part, 40b second conductive adhesive Part, 40p conductive paste, 42 first protrusion, 43 recess, 44 second protrusion, 48, 49 conductive joining member, 50 holder, 100 power supply, 200 power conversion device, 201 main conversion circuit, 202 semiconductor device, 203 control Circuit, 300 load.

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PCT/JP2021/017674 2020-05-18 2021-05-10 半導体装置及びその製造方法並びに電力変換装置 WO2021235256A1 (ja)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58196042A (ja) * 1982-05-11 1983-11-15 Toshiba Corp 半導体装置用リ−ドフレ−ム
JP2014179541A (ja) * 2013-03-15 2014-09-25 Renesas Electronics Corp 半導体装置およびその製造方法
JP2014203861A (ja) * 2013-04-02 2014-10-27 三菱電機株式会社 半導体装置および半導体モジュール
JP2015188026A (ja) * 2014-03-27 2015-10-29 三菱電機株式会社 電力用半導体装置、および電力用半導体装置の製造方法
JP2019175989A (ja) * 2018-03-28 2019-10-10 三菱電機株式会社 半導体装置
JP2020004784A (ja) * 2018-06-26 2020-01-09 三菱電機株式会社 パワーモジュールおよび電力変換装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58196042A (ja) * 1982-05-11 1983-11-15 Toshiba Corp 半導体装置用リ−ドフレ−ム
JP2014179541A (ja) * 2013-03-15 2014-09-25 Renesas Electronics Corp 半導体装置およびその製造方法
JP2014203861A (ja) * 2013-04-02 2014-10-27 三菱電機株式会社 半導体装置および半導体モジュール
JP2015188026A (ja) * 2014-03-27 2015-10-29 三菱電機株式会社 電力用半導体装置、および電力用半導体装置の製造方法
JP2019175989A (ja) * 2018-03-28 2019-10-10 三菱電機株式会社 半導体装置
JP2020004784A (ja) * 2018-06-26 2020-01-09 三菱電機株式会社 パワーモジュールおよび電力変換装置

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