WO2021227568A1 - 一种p型钝化接触太阳能电池及其制作方法 - Google Patents

一种p型钝化接触太阳能电池及其制作方法 Download PDF

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WO2021227568A1
WO2021227568A1 PCT/CN2021/074586 CN2021074586W WO2021227568A1 WO 2021227568 A1 WO2021227568 A1 WO 2021227568A1 CN 2021074586 W CN2021074586 W CN 2021074586W WO 2021227568 A1 WO2021227568 A1 WO 2021227568A1
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layer
passivation
solar cell
type
contact
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PCT/CN2021/074586
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English (en)
French (fr)
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廖晖
马玉超
单伟
何胜
徐伟智
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浙江正泰太阳能科技有限公司
海宁正泰新能源科技有限公司
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Publication of WO2021227568A1 publication Critical patent/WO2021227568A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of photovoltaic power generation, in particular to a P-type passivation contact solar cell and a manufacturing method thereof.
  • the metal electrode In the existing solar cell, after screen printing and sintering, the metal electrode directly contacts the semiconductor body, resulting in a high recombination rate, which makes the current cell efficiency and theoretical efficiency still have a large gap.
  • the whole surface passivation layer of doped polysilicon is usually used to improve the electrode contact performance. The parasitic loss leads to a decrease in current density and lowers the efficiency of solar cell power generation.
  • the purpose of the present invention is to provide a P-type passivation contact solar cell and a manufacturing method thereof, so as to solve the problem that the light parasitic loss caused by the excessive light absorption effect of polysilicon is reduced and the improvement of metal electrode contact performance cannot be achieved in the prior art.
  • the present invention provides a P-type passivation contact solar cell, including:
  • the front gate line, the front epitaxial layer, the N-type diffusion layer, the P-type base silicon, the back epitaxial layer and the back gate line that are arranged in order from the light-facing surface to the backlight surface are in contact with each other;
  • the front epitaxial layer includes a front contact passivation layer and a front cover passivation layer;
  • the front surface contact passivation layer is disposed in the metal area of the front surface of the P-type passivation contact solar cell; the front surface covering passivation layer is disposed in the non-metal area of the front surface;
  • the front contact passivation layer sequentially includes a phosphorous-doped polysilicon layer and a first silicon dioxide layer from the front surface to the backlight surface.
  • the front contact passivation layer composed of the phosphorus-doped polysilicon layer and the first silicon dioxide layer is provided only in the metal region where the front gate line of the solar cell is provided, so that the front gate line
  • the front contact passivation layer is connected to the P-type base silicon, and the metal front gate line no longer directly contacts the P-type base silicon, which improves the contact performance of the electrode and reduces the metal-semiconductor connection
  • the recombination rate at this position improves the power generation efficiency of the battery.
  • the metal area since the metal area only occupies a small part of the surface of the entire solar cell, the incident light from the non-metal area can be absorbed by the cell without being blocked, which greatly reduces the power generation efficiency.
  • the amount of incident light absorption of the phosphorus-doped polysilicon layer reduces the parasitic loss of light caused by the phosphorus-doped polysilicon layer, improves the utilization rate of light, and further improves the power generation efficiency of the cell.
  • the back epitaxial layer includes a back contact passivation layer and a back cover passivation layer;
  • the back contact passivation layer is provided in the metal area of the back surface of the P-type passivation contact solar cell; the back surface covering passivation layer is provided in the non-metal area of the back surface;
  • the back contact passivation layer sequentially includes a second silicon dioxide layer and a boron-doped polysilicon layer from the light-facing surface to the backlight surface.
  • the back contact passivation layer further includes a first aluminum oxide layer
  • the back contact passivation layer sequentially includes a second silicon dioxide layer, a boron-doped polysilicon layer, and the first aluminum oxide layer from the light-facing surface to the backlight surface.
  • the front metal region and the back metal region are planar structures with polished surfaces.
  • the front cover passivation layer sequentially includes a first silicon nitride layer and a third silicon dioxide layer from the light-facing surface to the backlight surface.
  • the first silicon nitride layer and the third silicon dioxide layer form a SiO 2 SiO x laminated passivation layer to ensure the surface passivation effect of the solar cell.
  • the first silicon nitride layer can also play the role of surface reflection reduction and reflection enhancement, and improve the incident light utilization rate of the solar cell.
  • the back cover passivation layer sequentially includes a second aluminum oxide layer and a second silicon nitride layer from the light-facing surface to the backlight surface.
  • the P-type passivation contact solar cell is a surface-textured solar cell.
  • a method for manufacturing a P-type passivation contact solar cell including:
  • a first silicon dioxide layer and a phosphorus-doped polysilicon layer are sequentially arranged on the front surface of the mask silicon wafer to obtain a silicon wafer to be passivated;
  • a front cover passivation layer is provided on the front surface of the silicon wafer to be passivated from which the mask layer is removed, and a back epitaxial layer is provided on the back surface of the silicon wafer to be passivated from which the mask layer is removed to obtain a semi-finished silicon wafer ;
  • a front electrode and a back electrode are arranged on the surface of the semi-finished silicon wafer to obtain the P-type passivation contact solar cell.
  • the provision of a mask layer on the surface of the N-type diffusion layer specifically includes:
  • the step of sequentially disposing a first silicon dioxide layer and a phosphorous-doped polysilicon layer on the front surface of the mask silicon wafer to obtain the silicon wafer to be passivated further includes:
  • the mask silicon wafer is oxidized on both sides to obtain a first silicon dioxide layer provided on the front surface of the mask silicon wafer and a second silicon dioxide layer provided on the back surface of the mask silicon wafer.
  • a phosphorus-doped polysilicon layer is provided on the surface of the first silicon dioxide layer, and a boron-doped polysilicon layer is provided on the surface of the second silicon dioxide layer to obtain a silicon wafer to be passivated.
  • the method further includes:
  • the removing the mask layer of the silicon wafer to be passivated specifically includes:
  • the mask layer of the silicon wafer to be passivated after removing the wax seal layer is removed.
  • the P-type passivation contact solar cell contacts the front grid lines, front epitaxial layer, N-type diffusion layer, P-type base silicon, and back epitaxially arranged in order from the light-facing surface to the backlight surface.
  • the front epitaxial layer includes a front contact passivation layer and a front cover passivation layer;
  • the front contact passivation layer is disposed in the metal area of the front surface of the P-type passivation contact solar cell;
  • the front surface covering passivation layer is arranged on the non-metal area of the front surface;
  • the front surface contact passivation layer includes a phosphorous-doped polysilicon layer and a first silicon dioxide layer in sequence from the light-facing surface to the backlight surface.
  • the invention also provides a manufacturing method of the P-type passivation contact solar cell.
  • the present invention only provides the phosphor-doped polysilicon layer and the first dioxide
  • the front-side contact passivation layer composed of a silicon layer enables the front-side gate lines to be connected to the P-type base silicon through the front-side contact passivation layer, and the metal-made front-side gate lines are no longer directly connected to the P-type base.
  • the silicon contact improves the contact performance of the electrode, reduces the recombination rate at the metal-semiconductor junction, and improves the power generation efficiency of the battery.
  • the metal area since the metal area only occupies a small part of the entire solar cell surface, the incident light of the non-metal area can be absorbed by the cell without being blocked, which greatly reduces the amount of incident light absorption of the phosphorus-doped polysilicon layer.
  • the light parasitic loss caused by the phosphorus-doped polysilicon layer is reduced, the light utilization rate is improved, and the power generation efficiency of the cell is improved.
  • FIG. 1 is a schematic structural diagram of a specific embodiment of a P-type passivation contact solar cell provided by the present invention
  • FIG. 2 is a schematic structural diagram of another specific embodiment of a P-type passivation contact solar cell provided by the present invention.
  • FIG. 3 is a schematic structural diagram of another specific embodiment of a P-type passivation contact solar cell provided by the present invention.
  • FIG. 4 is a schematic flow chart of a specific embodiment of the manufacturing method of the P-type passivation contact solar cell provided by the present invention.
  • the reference signs are: P-type base silicon 101, N-type diffusion layer 102, front gate line 111, first silicon nitride layer 112, third silicon dioxide layer 113, phosphorus-doped polysilicon layer 114, first silicon dioxide The layer 115, the back gate line 121, the second silicon nitride layer 122, the second aluminum oxide layer 123, the boron-doped polysilicon layer 124, the second silicon dioxide layer 125, and the first aluminum oxide layer 126.
  • the core of the present invention is to provide a P-type passivation contact solar cell.
  • a schematic structural diagram of a specific embodiment of the solar cell is shown in Fig. 1, which is called specific embodiment 1, including:
  • the front gate line 111, the front epitaxial layer, the N-type diffusion layer 102, the P-type base silicon 101, the back epitaxial layer and the back gate line 121 are arranged in order from the light-facing surface to the backlight surface to be in contact with each other;
  • the front epitaxial layer includes a front contact passivation layer and a front cover passivation layer;
  • the front surface contact passivation layer is disposed in the metal area of the front surface of the P-type passivation contact solar cell; the front surface covering passivation layer is disposed in the non-metal area of the front surface;
  • the front contact passivation layer sequentially includes a phosphorous-doped polysilicon layer 114 and a first silicon dioxide layer 115 from the front surface to the backlight surface.
  • the front metal region and the back metal region are planar structures with a polished surface, and the polished semiconductor surface and metal gate line can obtain better passivation performance, reduce the recombination center of the contact surface, and improve the power generation efficiency of the battery.
  • the front cover passivation layer sequentially includes a first silicon nitride layer 112 and a third silicon dioxide layer 113 from the light facing surface to the backlight surface.
  • the first silicon nitride layer 112 and the third silicon dioxide layer 113 are composed of The SiO x /SiO x laminated passivation layer ensures the surface passivation effect of the solar cell.
  • the first silicon nitride layer 112 can also play the role of surface reflection reduction and antireflection, and improve the incident light utilization of the solar cell Rate.
  • the P-type passivation contact solar cell is a solar cell with surface texturing.
  • front epitaxial layer the back epitaxial layer, the front cover passivation layer, and the front contact passivation layer are all collectively referred to, therefore, they are not shown in the drawings in the present invention. Instead, they all adopt a real specific structure. As shown in FIG. 1, the front surface covering passivation layer is not shown in FIG. Layer 112 and the third silicon dioxide layer 113.
  • the surface doping concentration of the phosphorus-doped polysilicon ranges from 3E+20/cm 3 to 5E+20/cm 3 .
  • the P-type passivation contact solar cell contacts the front gate line 111, the front epitaxial layer, the N-type diffused layer 102, the P-type base silicon 101, the back epitaxial layer, and The back gate line 121;
  • the front epitaxial layer includes a front contact passivation layer and a front cover passivation layer;
  • the front contact passivation layer is disposed in the metal area of the P-type passivation contacting the front surface of the solar cell;
  • the front surface The covering passivation layer is arranged on the non-metal area of the front surface;
  • the front contact passivation layer includes a phosphorous-doped polysilicon layer 114 and a first silicon dioxide layer 115 from the light-facing surface to the backlight surface.
  • the front contact passivation layer composed of the phosphorus-doped polysilicon layer 114 and the first silicon dioxide layer 115 is provided only in the metal region where the front gate line 111 of the solar cell is provided, so that the The front gate line 111 is connected to the P-type base silicon 101 through the front contact passivation layer, and the metal front gate line 111 is no longer in direct contact with the P-type base silicon, which improves the contact performance of the electrode.
  • the recombination rate at the metal-semiconductor junction is reduced, and the power generation efficiency of the battery is improved.
  • the metal area since the metal area only occupies a small part of the entire solar cell surface, the incident light of the non-metal area can be unblocked by the cell sheet Absorption greatly reduces the amount of incident light absorbed by the phosphorus-doped polysilicon layer 114, reduces the parasitic loss of light caused by the phosphorus-doped polysilicon layer 114, improves light utilization, and further improves the photoelectric conversion efficiency of the cell.
  • FIG. 2 The schematic diagram of the structure is shown in FIG. 2 and includes:
  • the front gate line 111, the front epitaxial layer, the N-type diffusion layer 102, the P-type base silicon 101, the back epitaxial layer and the back gate line 121 are arranged in order from the light-facing surface to the backlight surface to be in contact with each other;
  • the front epitaxial layer includes a front contact passivation layer and a front cover passivation layer;
  • the front surface contact passivation layer is disposed in the metal area of the front surface of the P-type passivation contact solar cell; the front surface covering passivation layer is disposed in the non-metal area of the front surface;
  • the front contact passivation layer sequentially includes a phosphorous-doped polysilicon layer 114 and a first silicon dioxide layer 115 from the light-facing surface to the backlight surface;
  • the back epitaxial layer includes a back contact passivation layer and a back cover passivation layer;
  • the back contact passivation layer is provided in the metal area of the back surface of the P-type passivation contact solar cell; the back surface covering passivation layer is provided in the non-metal area of the back surface;
  • the back contact passivation layer sequentially includes a second silicon dioxide layer 125 and a boron-doped polysilicon layer 124 from the front surface to the backlight surface.
  • the metal area on the back side of the P-type passivation contact solar cell is also provided with a back surface with a structure similar to that of the front contact passivation layer.
  • the contact passivation layer, and the rest of the structure is the same as the above-mentioned specific embodiments, and will not be repeated here.
  • this specific embodiment has further improved the back surface of the P-type passivation contact solar cell similar to the front surface, which can further improve the contact between the back gate line 121 and the semiconductor on the back of the battery. Performance, to further improve the power generation efficiency of the battery.
  • the P-type passivation contact solar cell is a double-sided solar cell, the amount of light entering the back of the cell can also be increased.
  • the back cover passivation layer includes a second aluminum oxide layer 123 and a second silicon nitride layer 122 from the light facing surface to the back light surface.
  • the back cover passivation layer can also be based on The actual situation is changed accordingly, such as a single-layer aluminum oxide passivation layer.
  • the structure of the back epitaxial layer is the same as the back cover passivation layer in this embodiment. The same can be the entire surface of the second aluminum oxide layer 123 and the second silicon nitride layer 122.
  • the doped surface concentration of the boron-doped polysilicon is 5E+19/cm 3 -1E+20/cm 3 .
  • the thickness of the first silicon dioxide layer 115 and the second silicon dioxide layer 125 ranges from 0.7 nanometers to 2 nanometers, inclusive; the phosphorus-doped polysilicon layer 114 and the boron-doped polysilicon layer 124 The thickness ranges from 50 nanometers to 200 nanometers, inclusive.
  • FIG. 3 The schematic structural diagram is shown in FIG. 3, including:
  • the front gate line 111, the front epitaxial layer, the N-type diffusion layer 102, the P-type base silicon 101, the back epitaxial layer and the back gate line 121 are arranged in order from the light-facing surface to the backlight surface to be in contact with each other;
  • the front epitaxial layer includes a front contact passivation layer and a front cover passivation layer;
  • the front surface contact passivation layer is disposed in the metal area of the front surface of the P-type passivation contact solar cell; the front surface covering passivation layer is disposed in the non-metal area of the front surface;
  • the front contact passivation layer sequentially includes a phosphorous-doped polysilicon layer 114 and a first silicon dioxide layer 115 from the light-facing surface to the backlight surface;
  • the back epitaxial layer includes a back contact passivation layer and a back cover passivation layer;
  • the back contact passivation layer is provided in the metal area of the back surface of the P-type passivation contact solar cell; the back surface covering passivation layer is provided in the non-metal area of the back surface;
  • the back contact passivation layer sequentially includes a second silicon dioxide layer 125 and a boron-doped polysilicon layer 124 from the light-facing surface to the backlight surface;
  • the back contact passivation layer further includes a first aluminum oxide layer 126;
  • the back contact passivation layer sequentially includes a second silicon dioxide layer 125, a boron-doped polysilicon layer 124, and the first aluminum oxide layer 126 from the light-facing surface to the backlight surface.
  • the difference between this embodiment and the above embodiment is that in this embodiment, the first aluminum oxide layer 126 is also added to the back contact passivation layer, and the rest of the structure is the same as the above embodiment. I will not repeat them here.
  • the first aluminum oxide layer 126 is further added to the original back contact passivation layer.
  • aluminum oxide is commonly used for back passivation in the back cover passivation layer to achieve The effect of increasing the minority carrier diffusion ability, increasing the open circuit voltage and increasing the short-circuit current.
  • the first aluminum oxide layer 126 forms a back passivation on the metal region on the back side to further improve the power generation efficiency of the battery.
  • the present invention also provides a method for manufacturing a P-type passivation contact solar cell.
  • a schematic flow diagram of a specific embodiment is shown in FIG. 4, which is referred to as specific embodiment four, including:
  • Step S101 Phosphorus doping is performed on the front surface of the P-type base silicon to obtain an N-type diffusion layer.
  • grooved double-sided texturing can also be used to texturize the P-type base silicon, with a weight reduction of 0.3-0.35g.
  • the doping concentration is controlled at 1E+20-3E+20/cm 3 .
  • Step S102 setting a mask layer on the surface of the N-type diffusion layer.
  • the mask layer is a silicon oxynitride layer.
  • Step S103 etching the mask layer to remove the mask layer covering the outer surface of the metal area on the front side to obtain a masked silicon wafer.
  • the etching is laser etching, and the width of the groove left by the metal region after removing the mask layer is 100 micrometers to 300 micrometers.
  • HF can also be used to remove the back PSG, and the masked silicon wafer can be double-sided polishing and post-cleaning by alkali polishing, and the front mask layer is retained, so that the alkali polishing can reduce the weight by 0.2- 0.35g, reflectivity>40%.
  • Step S104 A first silicon dioxide layer and a phosphorus-doped polysilicon layer are sequentially arranged on the front surface of the mask silicon wafer to obtain a silicon wafer to be passivated.
  • the method further includes:
  • the wax seal layer of the silicon wafer to be passivated that has been alkali washed is removed.
  • Alkaline washing can be used to remove excess polysilicon generated in the non-metal area to prevent it from affecting the subsequent removal of the mask layer.
  • the surface concentration of the phosphorous doping is 3E+20/cm 3 -5E+20/cm 3 , of course, after the doping is completed, the silicon wafer to be passivated needs to be annealed at a high temperature to repair the lattice damage and activate the non-passivation. Crystal silicon passivation performance, controlled annealing temperature is 850°C-950°C.
  • Step S105 removing the mask layer of the silicon wafer to be passivated.
  • the removing the mask layer of the silicon wafer to be passivated specifically includes:
  • the mask layer of the silicon wafer to be passivated after removing the wax seal layer is removed.
  • Step S106 Disposing a front cover passivation layer on the front surface of the silicon wafer to be passivated from which the mask layer is removed, and disposing a back epitaxial layer on the back surface of the silicon wafer to be passivated from which the mask layer is removed, to obtain Semi-finished silicon wafers.
  • Step S107 Disposing a front electrode and a back electrode on the surface of the semi-finished silicon wafer to obtain the P-type passivation contact solar cell.
  • the electrode paste will burn off the front cover passivation layer provided in the front metal area, so the front cover passivation layer of the finished solar cell is only Exist in the non-metallic area.
  • the disposing a mask layer on the surface of the N-type diffusion layer further includes:
  • the step of disposing a first silicon dioxide layer and a phosphorus-doped polysilicon layer on the front surface of the mask silicon wafer in order to obtain the silicon wafer to be passivated is specifically:
  • the mask silicon wafer is oxidized on both sides to obtain a first silicon dioxide layer provided on the front surface of the mask silicon wafer and a second silicon dioxide layer provided on the back surface of the mask silicon wafer.
  • a phosphorus-doped polysilicon layer is provided on the surface of the first silicon dioxide layer, and a boron-doped polysilicon layer is provided on the surface of the second silicon dioxide layer to obtain a silicon wafer to be passivated.
  • the double-sided oxidation is used to simultaneously provide silicon dioxide layers on the front and back of the cell, which can greatly improve production efficiency and simplify the production process. It should be noted that: After the silicon wafer to be passivated is obtained, the second silicon dioxide layer and the boron-doped polysilicon layer in the back non-metal area can be removed by removing the back mask layer. Of course, it can also be based on actual conditions. Use other methods.
  • the manufacturing method of the P-type passivation contact solar cell provided by the present invention is to obtain an N-type diffusion layer by doping phosphorus on the front surface of the P-type base silicon; a mask layer is provided on the surface of the N-type diffusion layer; The mask layer is etched, and the mask layer covering the outer surface of the metal area on the front side is removed to obtain a masked silicon wafer; a first silicon dioxide layer and a first silicon dioxide layer are sequentially arranged on the front side of the masked silicon wafer Phosphorus-doped polysilicon layer to obtain a silicon wafer to be passivated; removing the mask layer of the silicon wafer to be passivated; setting a front cover passivation on the front surface of the silicon wafer to be passivated from which the mask layer is removed Layer, a back epitaxial layer is provided on the back surface of the silicon wafer to be passivated from which the mask layer is removed to obtain a semi-finished silicon wafer; a front electrode and a back electrode are provided on
  • the front contact passivation layer composed of the phosphorus-doped polysilicon layer and the first silicon dioxide layer is provided only in the metal region where the front gate line of the solar cell is provided, so that the front gate line
  • the front contact passivation layer is connected to the P-type base silicon, and the metal front gate line no longer directly contacts the P-type base silicon, which improves the contact performance of the electrode and reduces the metal-semiconductor connection
  • the recombination rate at this position improves the power generation efficiency of the battery.
  • the metal area since the metal area only occupies a small part of the surface of the entire solar cell, the incident light from the non-metal area can be absorbed by the cell without being blocked, which greatly reduces the power generation efficiency.
  • the amount of incident light absorption of the phosphorus-doped polysilicon layer reduces the parasitic loss of light caused by the phosphorus-doped polysilicon layer, improves the utilization rate of light, and further improves the power generation efficiency of the cell.

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Abstract

本发明涉及光伏发电领域，公开了一种P型钝化接触太阳能电池及其制作方法，通过从迎光面到背光面依次接触设置的正面栅线、正面外延层、N型扩散层、P型基体硅、背面外延层及背面栅线；所述正面外延层包括正面接触钝化层及正面覆盖钝化层；所述正面接触钝化层设置于所述P型钝化接触太阳能电池的正面的金属区；所述正面覆盖钝化层设置于所述正面的非金属区；所述正面接触钝化层从迎光面到背光面依次包括磷掺杂多晶硅层及第一二氧化硅层。本发明降低了金属-半导体连接处的复合速率，提高了电池的发电效率，由于金属区只占整个太阳能电池表面的小部分，进而提升电池片的发电效率。

Description

一种P型钝化接触太阳能电池及其制作方法 技术领域
本发明涉及光伏发电领域，特别是涉及一种P型钝化接触太阳能电池及其制作方法。
背景技术
太阳能作为一种可再生能源，从发明初期就受到全世界的重视，进入21世纪后，越来越多的太阳能电池发电技术得到发展，作为太阳能光电利用中发展最快的领域之一，晶体硅电池的技术发展颇受瞩目，但其度电成本的限制导致市场竞争不足，解决这一问题的方法归根结底是技术创新，人们不断研制开发更具潜力的电池结构，优化工艺制程，从而提升晶硅电池效益。
现有的太阳能电池，经过丝网印刷与烧结后，金属电极直接与半导体机体接触，导致复合速率仍然较高，使得目前电池效率与理论效率仍差距较大。而目前为了解决金属电极的接触问题，通常采用掺杂多晶硅的整面钝化层改善电极接触性能，但掺杂多晶硅又具有较强的吸光特性，使得一部分入射光不能被电池有效利用，造成光寄生损失导致电流密度下降，拉低太阳能电池发电效率。
因此，如何找到一种在保证电极接触性能良好的同时，避免多晶硅导致的光寄生损失的方法，是本领域技术人员亟待解决的问题。
发明内容
本发明的目的是提供一种P型钝化接触太阳能电池及其制作方法，以解决现有技术中由于降低多晶硅吸光效应太强导致光寄生损失与改善金属电极接触性能不可兼得的问题。
为解决上述技术问题，本发明提供一种P型钝化接触太阳能电池，包括：
从迎光面到背光面依次接触设置的正面栅线、正面外延层、N型扩散层、P型基体硅、背面外延层及背面栅线；
所述正面外延层包括正面接触钝化层及正面覆盖钝化层；
所述正面接触钝化层设置于所述P型钝化接触太阳能电池的正面的金属区；所述正面覆盖钝化层设置于所述正面的非金属区；
所述正面接触钝化层从迎光面到背光面依次包括磷掺杂多晶硅层及第一二氧化硅层。
本发明通过只在所述太阳能电池设置正面栅线的金属区设置所述由所述磷掺杂多晶硅层及所述第一二氧化硅层组成的正面接触钝化层，使所述正面栅线通过所述正面接触钝化层与所述P型基体硅相连，金属制的所述正面栅线不再直接与所述P性基体硅接触，改善了电极的接触性能，降低了金属-半导体连接处的复合速率，提高了电池的发电效率，此外，由于所述金属区只占整个太阳能电池表面的小部分，所述非金属区的入射光可不被阻挡地被电池片吸收，大大降低了所述磷掺杂多晶硅层的入射光线吸收量，减轻所述磷掺杂多晶硅层造成的光寄生损失，提高光线利用率，进而提升电池片的发电效率。
可选地，在所述的P型钝化接触太阳能电池中，所述背面外延层包括背面接触钝化层及背面覆盖钝化层；
所述背面接触钝化层设置于所述P型钝化接触太阳能电池的背面的金属区；所述背面覆盖钝化层设置于所述背面的非金属区；
所述背面接触钝化层从迎光面到背光面依次包括第二二氧化硅层及硼掺杂多晶硅层。
可选地，在所述的P型钝化接触太阳能电池中，所述背面接触钝化层还包括第一氧化铝层；
所述背面接触钝化层从迎光面到背光面依次包括第二二氧化硅层、硼掺杂多晶硅层及所述第一氧化铝层。
可选地，在所述的P型钝化接触太阳能电池中，所述正面金属区及所述背面金属区为表面抛光的平面结构。
可选地，在所述的P型钝化接触太阳能电池中，所述正面覆盖钝化层从迎光面到背光面依次包括第一氮化硅层及第三二氧化硅层。
第一氮化硅层及第三二氧化硅层组成SiO 2SiO x层叠钝化层，保证太阳能电池的表面钝化效果。此外，所述第一氮化硅层还能起到表面减反与增透的作用，提升太阳能电池的入射光利用率。
可选地，在所述的P型钝化接触太阳能电池中，所述背面覆盖钝化层从迎光面到背光面依次包括第二氧化铝层及第二氮化硅层。
可选地，在所述的P型钝化接触太阳能电池中，所述P型钝化接触太阳能电池为 表面制绒的太阳能电池。
一种P型钝化接触太阳能电池的制作方法，包括：
对P型基体硅的正面进行磷掺杂，得到N型扩散层；
在所述N型扩散层表面设置掩膜层；
对所述掩膜层进行刻蚀，去除覆盖在所述正面的金属区外表面的所述掩膜层，得到掩膜硅片；
在所述掩膜硅片的正面依次设置第一二氧化硅层及磷掺杂多晶硅层，得到待钝化硅片；
去除所述待钝化硅片的所述掩膜层；
在去除所述掩膜层的所述待钝化硅片的正面设置正面覆盖钝化层，在去除所述掩膜层的所述待钝化硅片的背面设置背面外延层，得到半成品硅片；
在所述半成品硅片表面设置正面电极及背面电极，得到所述P型钝化接触太阳能电池。
可选地，在所述的P型钝化接触太阳能电池的制作方法中，所述在所述N型扩散层表面设置掩膜层具体为：
在所述N型扩散层表面及所述P型基体硅的背面设置掩膜层；
相应地，所述在所述掩膜硅片的正面依次设置第一二氧化硅层及磷掺杂多晶硅层，得到待钝化硅片还包括：
对所述掩膜硅片进行双面氧化，得到设置于所述掩膜硅片的正面的第一二氧化硅层及设置于所述掩膜硅片的背面的第二二氧化硅层，在所述第一二氧化硅层表面设置磷掺杂多晶硅层，在所述第二二氧化硅层表面设置硼掺杂多晶硅层，得到待钝化硅片。
可选地，在所述的P型钝化接触太阳能电池的制作方法中，在得到待钝化硅片后，还包括：
在所述待钝化硅片的表面的金属区进行蜡印刷，得到蜡封层；
将经过蜡印刷的待钝化硅片进行碱洗；
去除经过碱洗的待钝化硅片的所述蜡封层；
相应地，所述去除所述待钝化硅片的所述掩膜层具体为：
去除去掉所述蜡封层后的待钝化硅片的所述掩膜层。
综上所述，本发明所提供的P型钝化接触太阳能电池，通过从迎光面到背光面依次接触设置的正面栅线、正面外延层、N型扩散层、P型基体硅、背面外延层及背面 栅线；所述正面外延层包括正面接触钝化层及正面覆盖钝化层；所述正面接触钝化层设置于所述P型钝化接触太阳能电池的正面的金属区；所述正面覆盖钝化层设置于所述正面的非金属区；所述正面接触钝化层从迎光面到背光面依次包括磷掺杂多晶硅层及第一二氧化硅层。本发明同时还提供了一种P型钝化接触太阳能电池的制作方法。
与现有技术相比，本发明技术方案的有益效果为：本发明通过只在所述太阳能电池设置正面栅线的金属区设置所述由所述磷掺杂多晶硅层及所述第一二氧化硅层组成的正面接触钝化层，使所述正面栅线通过所述正面接触钝化层与所述P型基体硅相连，金属制的所述正面栅线不再直接与所述P型基体硅接触，改善了电极的接触性能，降低了金属-半导体连接处的复合速率，提高了电池的发电效率。此外，由于所述金属区只占整个太阳能电池表面的小部分，所述非金属区的入射光可不被阻挡地被电池片吸收，大大降低了所述磷掺杂多晶硅层的入射光线吸收量，减轻所述磷掺杂多晶硅层造成的光寄生损失，提高光线利用率，进而提升电池片的发电效率。
附图说明
为了更清楚的说明本发明实施例或现有技术的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单的介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明提供的P型钝化接触太阳能电池的一种具体实施方式的结构示意图；
图2为本发明提供的P型钝化接触太阳能电池的另一种具体实施方式的结构示意图；
图3为本发明提供的P型钝化接触太阳能电池的又一种具体实施方式的结构示意图；
图4为本发明提供的P型钝化接触太阳能电池的制作方法的一种具体实施方式的流程示意图。
附图标记为：P型基体硅101、N型扩散层102、正面栅线111、第一氮化硅层112、第三二氧化硅层113、磷掺杂多晶硅层114、第一二氧化硅层115、背面栅线121、第二氮化硅层122、第二氧化铝层123、硼掺杂多晶硅层124、第二二氧化硅层125、第一氧化铝层126。
具体实施方式
为了使本技术领域的人员更好地理解本发明方案，下面结合附图和具体实施方式对本发明作进一步的详细说明。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的核心是提供一种P型钝化接触太阳能电池，其一种具体实施方式的结构示意图如图1所示，称其为具体实施方式一，包括：
从迎光面到背光面依次接触设置的正面栅线111、正面外延层、N型扩散层102、P型基体硅101、背面外延层及背面栅线121；
所述正面外延层包括正面接触钝化层及正面覆盖钝化层；
所述正面接触钝化层设置于所述P型钝化接触太阳能电池的正面的金属区；所述正面覆盖钝化层设置于所述正面的非金属区；
所述正面接触钝化层从迎光面到背光面依次包括磷掺杂多晶硅层114及第一二氧化硅层115。
所述正面金属区及所述背面金属区为表面抛光的平面结构，经过抛光后的半导体表面与金属栅线能获得更好的钝化性能，减少接触面的复合中心，提升电池发电效率。
所述正面覆盖钝化层从迎光面到背光面依次包括第一氮化硅层112及第三二氧化硅层113，所述第一氮化硅层112及第三二氧化硅层113组成SiO x/SiO x层叠钝化层，保证太阳能电池的表面钝化效果，此外，所述第一氮化硅层112还能起到表面减反与增透的作用，提升太阳能电池的入射光利用率。
更进一步地，所述P型钝化接触太阳能电池为表面制绒的太阳能电池。
需要注意的是，所述正面外延层、所述背面外延层、所述正面覆盖钝化层及所述正面接触钝化层都是统称，因此，在本发明中的附图中没有标出，而是均采用了实在的具体结构，如图1所示，图1中并无所述正面覆盖钝化层，而是直接标出组成所述正面覆盖钝化层的所述第一氮化硅层112及第三二氧化硅层113。
所述磷掺杂多晶硅的表面掺杂浓度范围为3E+20/cm 3-5E+20/cm 3。
本发明所提供的P型钝化接触太阳能电池，通过从迎光面到背光面依次接触设置的正面栅线111、正面外延层、N型扩散层102、P型基体硅101、背面外延层及背面栅线121；所述正面外延层包括正面接触钝化层及正面覆盖钝化层；所述正面接触钝化层设置于所述P型钝化接触太阳能电池的正面的金属区；所述正面覆盖钝化层设置 于所述正面的非金属区；所述正面接触钝化层从迎光面到背光面依次包括磷掺杂多晶硅层114及第一二氧化硅层115。本发明通过只在所述太阳能电池设置正面栅线111的金属区设置所述由所述磷掺杂多晶硅层114及所述第一二氧化硅层115组成的正面接触钝化层，使所述正面栅线111通过所述正面接触钝化层与所述P型基体硅101相连，金属制的所述正面栅线111不再直接与所述P性基体硅接触，改善了电极的接触性能，降低了金属-半导体连接处的复合速率，提高了电池的发电效率，此外，由于所述金属区只占整个太阳能电池表面的小部分，所述非金属区的入射光可不被阻挡地被电池片吸收，大大降低了所述磷掺杂多晶硅层114的入射光线吸收量，减轻所述磷掺杂多晶硅层114造成的光寄生损失，提高光线利用率，进而提升电池片的光电转换效率。
在具体实施方式一的基础上，进一步对所述P型钝化接触太阳能电池的背面做改进，得到具体实施方式二，其结构示意图如图2所示，包括：
从迎光面到背光面依次接触设置的正面栅线111、正面外延层、N型扩散层102、P型基体硅101、背面外延层及背面栅线121；
所述正面外延层包括正面接触钝化层及正面覆盖钝化层；
所述正面接触钝化层设置于所述P型钝化接触太阳能电池的正面的金属区；所述正面覆盖钝化层设置于所述正面的非金属区；
所述正面接触钝化层从迎光面到背光面依次包括磷掺杂多晶硅层114及第一二氧化硅层115；
所述背面外延层包括背面接触钝化层及背面覆盖钝化层；
所述背面接触钝化层设置于所述P型钝化接触太阳能电池的背面的金属区；所述背面覆盖钝化层设置于所述背面的非金属区；
所述背面接触钝化层从迎光面到背光面依次包括第二二氧化硅层125及硼掺杂多晶硅层124。
本具体实施方式与上述具体实施方式的不同之处在于，本具体实施方式中同样在所述P型钝化接触太阳能电池的背面的金属区设置了结构与所述正面接触钝化层类似的背面接触钝化层，其余结构均与上述具体实施方式相同，在此不再展开赘述。
本具体实施方式在上述具体实施方式的基础上，进一步对所述P型钝化接触太阳能电池的背面也做了类似正面的改进，可进一步改善电池背面的所述背面栅线121与 半导体的接触性能，进一步提升电池的发电效率，此外，当所述P型钝化接触太阳能电池为双面太阳能电池时，同样可以增加电池背面的进光量。
作为一种优选实施方式，所述背面覆盖钝化层从迎光面到背光面依次包括第二氧化铝层123及第二氮化硅层122，当然，所述背面覆盖钝化层也可根据实际情况作相应变动，如单层氧化铝钝化层。当所述P型钝化接触太阳能电池不做本具体实施方式中的金属区、非金属区的区分处理时，所述背面外延层的结构与本具体实施方式中的所述背面覆盖钝化层相同，即可为整面的所述第二氧化铝层123及第二氮化硅层122。
所述硼掺杂多晶硅的掺杂表面浓度为5E+19/cm 3-1E+20/cm 3。所述第一二氧化硅层115及所述第二二氧化硅层125的厚度范围为0.7纳米至2纳米，包括端点值；所述磷掺杂多晶硅层114及所述硼掺杂多晶硅层124的厚度范围为50纳米至200纳米，包括端点值。
在具体实施方式二的基础上，进一步对所述P型钝化接触太阳能电池的背面做改进，得到具体实施方式三，其结构示意图如图3所示，包括：
从迎光面到背光面依次接触设置的正面栅线111、正面外延层、N型扩散层102、P型基体硅101、背面外延层及背面栅线121；
所述正面外延层包括正面接触钝化层及正面覆盖钝化层；
所述正面接触钝化层设置于所述P型钝化接触太阳能电池的正面的金属区；所述正面覆盖钝化层设置于所述正面的非金属区；
所述正面接触钝化层从迎光面到背光面依次包括磷掺杂多晶硅层114及第一二氧化硅层115；
所述背面外延层包括背面接触钝化层及背面覆盖钝化层；
所述背面接触钝化层设置于所述P型钝化接触太阳能电池的背面的金属区；所述背面覆盖钝化层设置于所述背面的非金属区；
所述背面接触钝化层从迎光面到背光面依次包括第二二氧化硅层125及硼掺杂多晶硅层124；
所述背面接触钝化层还包括第一氧化铝层126；
所述背面接触钝化层从迎光面到背光面依次包括第二二氧化硅层125、硼掺杂多晶硅层124及所述第一氧化铝层126。
本具体实施方式与上述具体实施方式的不同之处在于，本具体实施方式中同样为 所述背面接触钝化层增设了所述第一氧化铝层126，其余结构均与上述具体实施方式相同，在此不再展开赘述。
本具体实施方式中在原有的背面接触钝化层的基础上进一步增设了所述第一氧化铝层126，由上文可知，所述背面覆盖钝化层中常用氧化铝做背钝化，达到增加少子扩散能力，提高开路电压、增加短路电流的作用，本具体实施方式通过所述第一氧化铝层126在背面的金属区形成背钝化，进一步提升电池的发电效率。
本发明还提供了一种P型钝化接触太阳能电池的制作方法，其一种具体实施方式的流程示意图如图4所示，称其为具体实施方式四，包括：
步骤S101：对P型基体硅的正面进行磷掺杂，得到N型扩散层。
在磷掺杂前，还可采用槽式双面制绒对所述P型基体硅进行制绒，减重为0.3-0.35g。
所述掺杂浓度控制在1E+20-3E+20/cm 3。
步骤S102：在所述N型扩散层表面设置掩膜层。
所述掩膜层为氮氧化硅层。
步骤S103：对所述掩膜层进行刻蚀，去除覆盖在所述正面的金属区外表面的所述掩膜层，得到掩膜硅片。
所述刻蚀为激光刻蚀，去除掩膜层后的金属区留下的凹槽宽度为100微米至300微米。
在得到所述掩膜硅片后，还可采用HF去除背面PSG，并采用碱抛光对所述掩膜硅片进行双面抛光及后清洗并保留正面掩膜层，控制碱抛减重0.2-0.35g，反射率＞40％。
步骤S104：在所述掩膜硅片的正面依次设置第一二氧化硅层及磷掺杂多晶硅层，得到待钝化硅片。
作为一种优选实施方式，在得到待钝化硅片后，还包括：
在所述待钝化硅片的表面的金属区进行蜡印刷，得到蜡封层；
将经过蜡印刷的待钝化硅片进行碱洗；
去除经过碱洗的待钝化硅片的所述蜡封层。
可通过碱洗去除在非金属区生成的多余多晶硅，避免其影响后续所述掩膜层的去除。
所述磷掺杂的表面浓度为3E+20/cm 3-5E+20/cm 3，当然，掺杂完成后需要对所述待钝化硅片进行高温退火，以修复晶格损伤及激活非晶硅钝化性能，控制退火温度为850℃-950℃。
步骤S105：去除所述待钝化硅片的所述掩膜层。
相应地，所述去除所述待钝化硅片的所述掩膜层具体为：
去除去掉所述蜡封层后的待钝化硅片的所述掩膜层。
步骤S106：在去除所述掩膜层的所述待钝化硅片的正面设置正面覆盖钝化层，在去除所述掩膜层的所述待钝化硅片的背面设置背面外延层，得到半成品硅片。
步骤S107：在所述半成品硅片表面设置正面电极及背面电极，得到所述P型钝化接触太阳能电池。
需要特别提醒的是，在设置正面电极的过程中，电极浆料会把设置在正面金属区的所述正面覆盖钝化层烧灼掉，因此得到的成品太阳能电池的所述正面覆盖钝化层只存在于非金属区。
作为一种优选的实施方式，所述在所述N型扩散层表面设置掩膜层还包括：
在所述N型扩散层表面及所述P型基体硅的背面设置掩膜层；
相应地，所述在所述掩膜硅片的正面依次设置第一二氧化硅层及磷掺杂多晶硅层，得到待钝化硅片具体为：
对所述掩膜硅片进行双面氧化，得到设置于所述掩膜硅片的正面的第一二氧化硅层及设置于所述掩膜硅片的背面的第二二氧化硅层，在所述第一二氧化硅层表面设置磷掺杂多晶硅层，在所述第二二氧化硅层表面设置硼掺杂多晶硅层，得到待钝化硅片。
当在正面与背面的金属区均需要设置接触钝化层时，通过双面氧化同时在电池片的正面及背面设置二氧化硅层，可大大提高生产效率，简化生产工艺，需要注意的是，在得到所述待钝化硅片后，可通过去除背面掩膜层的方法去除背面非金属区的所述第二二氧化硅层及所述硼掺杂多晶硅层，当然，也可根据实际情况使用其他方法。
本发明所提供的P型钝化接触太阳能电池的制作方法，通过对P型基体硅的正面进行磷掺杂，得到N型扩散层；在所述N型扩散层表面设置掩膜层；对所述掩膜层进行刻蚀，去除覆盖在所述正面的金属区外表面的所述掩膜层，得到掩膜硅片；在所述掩膜硅片的正面依次设置第一二氧化硅层及磷掺杂多晶硅层，得到待钝化硅片；去除所述待钝化硅片的所述掩膜层；在去除所述掩膜层的所述待钝化硅片的正面设置正面覆盖钝化层，在去除所述掩膜层的所述待钝化硅片的背面设置背面外延层，得到半 成品硅片；在所述半成品硅片表面设置正面电极及背面电极，得到所述P型钝化接触太阳能电池。本发明通过只在所述太阳能电池设置正面栅线的金属区设置所述由所述磷掺杂多晶硅层及所述第一二氧化硅层组成的正面接触钝化层，使所述正面栅线通过所述正面接触钝化层与所述P型基体硅相连，金属制的所述正面栅线不再直接与所述P性基体硅接触，改善了电极的接触性能，降低了金属-半导体连接处的复合速率，提高了电池的发电效率，此外，由于所述金属区只占整个太阳能电池表面的小部分，所述非金属区的入射光可不被阻挡地被电池片吸收，大大降低了所述磷掺杂多晶硅层的入射光线吸收量，减轻所述磷掺杂多晶硅层造成的光寄生损失，提高光线利用率，进而提升电池片的发电效率。
以同规格的常规太阳能电池(正面接触钝化层占据整面)的性能数据为基准1，本申请太阳能电池的对应数据如下所示：
分组 Uoc Jsc FF Eta
对照组 1 1 1 1
本申请组 1 1.007 1.008 1.016
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其它实施例的不同之处，各个实施例之间相同或相似部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。
需要说明的是，在本说明书中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个......”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上对本发明所提供的P型钝化接触太阳能电池及其制作方法进行了详细介绍。本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以对本发明进行若干改进和修饰，这 些改进和修饰也落入本发明权利要求的保护范围内。

Claims (10)

  1. 一种P型钝化接触太阳能电池，其特征在于，包括：
    从迎光面到背光面依次接触设置的正面栅线、正面外延层、N型扩散层、P型基体硅、背面外延层及背面栅线；
    所述正面外延层包括正面接触钝化层及正面覆盖钝化层；
    所述正面接触钝化层设置于所述P型钝化接触太阳能电池的正面的金属区；所述正面覆盖钝化层设置于所述正面的非金属区；
    所述正面接触钝化层从迎光面到背光面依次包括磷掺杂多晶硅层及第一二氧化硅层。
  2. 如权利要求1所述的P型钝化接触太阳能电池，其特征在于，所述背面外延层包括背面接触钝化层及背面覆盖钝化层；
    所述背面接触钝化层设置于所述P型钝化接触太阳能电池的背面的金属区；所述背面覆盖钝化层设置于所述背面的非金属区；
    所述背面接触钝化层从迎光面到背光面依次包括第二二氧化硅层及硼掺杂多晶硅层。
  3. 如权利要求2所述的P型钝化接触太阳能电池，其特征在于，所述背面接触钝化层还包括第一氧化铝层；
    所述背面接触钝化层从迎光面到背光面依次包括第二二氧化硅层、硼掺杂多晶硅层及所述第一氧化铝层。
  4. 如权利要求1所述的P型钝化接触太阳能电池，其特征在于，所述背面覆盖钝化层从迎光面到背光面依次包括第二氧化铝层及第二氮化硅层。
  5. 如权利要求1所述的P型钝化接触太阳能电池，其特征在于，所述正面金属区及所述背面金属区为表面抛光的平面结构。
  6. 如权利要求1所述的P型钝化接触太阳能电池，其特征在于，所述正面覆盖钝化层从迎光面到背光面依次包括第一氮化硅层及第三二氧化硅层。
  7. 如权利要求1所述的P型钝化接触太阳能电池，其特征在于，所述P型钝化接触太阳能电池为表面制绒的太阳能电池。
  8. 一种P型钝化接触太阳能电池的制作方法，其特征在于，包括：
    对P型基体硅的正面进行磷掺杂，得到N型扩散层；
    在所述N型扩散层表面设置掩膜层；
    对所述掩膜层进行刻蚀，去除覆盖在所述正面的金属区外表面的所述掩膜层，得 到掩膜硅片；
    在所述掩膜硅片的正面依次设置第一二氧化硅层及磷掺杂多晶硅层，得到待钝化硅片；
    去除所述待钝化硅片的所述掩膜层；
    在去除所述掩膜层的所述待钝化硅片的正面设置正面覆盖钝化层，在去除所述掩膜层的所述待钝化硅片的背面设置背面外延层，得到半成品硅片；
    在所述半成品硅片表面设置正面电极及背面电极，得到所述P型钝化接触太阳能电池。
  9. 如权利要求8所述的P型钝化接触太阳能电池的制作方法，其特征在于，所述在所述N型扩散层表面设置掩膜层还包括：
    在所述N型扩散层表面及所述P型基体硅的背面设置掩膜层；
    相应地，所述在所述掩膜硅片的正面依次设置第一二氧化硅层及磷掺杂多晶硅层，得到待钝化硅片具体为：
    对所述掩膜硅片进行双面氧化，得到设置于所述掩膜硅片的正面的第一二氧化硅层及设置于所述掩膜硅片的背面的第二二氧化硅层，在所述第一二氧化硅层表面设置磷掺杂多晶硅层，在所述第二二氧化硅层表面设置硼掺杂多晶硅层，得到待钝化硅片。
  10. 如权利要求8所述的P型钝化接触太阳能电池的制作方法，其特征在于，在得到待钝化硅片后，还包括：
    在所述待钝化硅片的表面的金属区进行蜡印刷，得到蜡封层；
    将经过蜡印刷的待钝化硅片进行碱洗；
    去除经过碱洗的待钝化硅片的所述蜡封层；
    相应地，所述去除所述待钝化硅片的所述掩膜层具体为：
    去除去掉所述蜡封层后的待钝化硅片的所述掩膜层。
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