CN116864546A - 一种新结构的背poly太阳能电池及其制备方法 - Google Patents
一种新结构的背poly太阳能电池及其制备方法 Download PDFInfo
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- CN116864546A CN116864546A CN202310939548.1A CN202310939548A CN116864546A CN 116864546 A CN116864546 A CN 116864546A CN 202310939548 A CN202310939548 A CN 202310939548A CN 116864546 A CN116864546 A CN 116864546A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN202310939548.1A CN116864546B (zh) | 2023-07-28 | 2023-07-28 | 一种背poly太阳能电池及其制备方法 |
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CN202310939548.1A CN116864546B (zh) | 2023-07-28 | 2023-07-28 | 一种背poly太阳能电池及其制备方法 |
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CN116864546A true CN116864546A (zh) | 2023-10-10 |
CN116864546B CN116864546B (zh) | 2024-03-29 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507872A (zh) * | 2017-08-14 | 2017-12-22 | 江苏科来材料科技有限公司 | 一种双面掺杂的高效太阳能电池及其制作方法 |
CN210107974U (zh) * | 2019-03-05 | 2020-02-21 | 上海米开罗那机电技术有限公司 | 一种锂电池生产用烘干装置 |
CN112331742A (zh) * | 2020-11-10 | 2021-02-05 | 帝尔激光科技(无锡)有限公司 | 一种选择性发射极钝化接触太阳电池及其制备方法 |
CN113471305A (zh) * | 2021-07-01 | 2021-10-01 | 同翎新能源(扬州)有限公司 | 一种选择性钝化接触结构电池及其制备方法 |
WO2021227568A1 (zh) * | 2020-05-14 | 2021-11-18 | 浙江正泰太阳能科技有限公司 | 一种p型钝化接触太阳能电池及其制作方法 |
CN113707761A (zh) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | 一种n型选择性发射极太阳能电池及其制备方法 |
CN115483298A (zh) * | 2022-09-27 | 2022-12-16 | 常州时创能源股份有限公司 | 一种N型晶体硅TOPCon电池结构及其制备方法 |
WO2023072013A1 (zh) * | 2021-10-25 | 2023-05-04 | 天合光能股份有限公司 | 发射极、选择性发射极电池的制备方法及选择性发射极电池 |
WO2023093604A1 (zh) * | 2021-11-23 | 2023-06-01 | 晶澳(扬州)太阳能科技有限公司 | 太阳能电池以及太阳能电池的制备方法 |
-
2023
- 2023-07-28 CN CN202310939548.1A patent/CN116864546B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107507872A (zh) * | 2017-08-14 | 2017-12-22 | 江苏科来材料科技有限公司 | 一种双面掺杂的高效太阳能电池及其制作方法 |
CN210107974U (zh) * | 2019-03-05 | 2020-02-21 | 上海米开罗那机电技术有限公司 | 一种锂电池生产用烘干装置 |
WO2021227568A1 (zh) * | 2020-05-14 | 2021-11-18 | 浙江正泰太阳能科技有限公司 | 一种p型钝化接触太阳能电池及其制作方法 |
CN112331742A (zh) * | 2020-11-10 | 2021-02-05 | 帝尔激光科技(无锡)有限公司 | 一种选择性发射极钝化接触太阳电池及其制备方法 |
CN113471305A (zh) * | 2021-07-01 | 2021-10-01 | 同翎新能源(扬州)有限公司 | 一种选择性钝化接触结构电池及其制备方法 |
CN113707761A (zh) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | 一种n型选择性发射极太阳能电池及其制备方法 |
WO2023072013A1 (zh) * | 2021-10-25 | 2023-05-04 | 天合光能股份有限公司 | 发射极、选择性发射极电池的制备方法及选择性发射极电池 |
WO2023093604A1 (zh) * | 2021-11-23 | 2023-06-01 | 晶澳(扬州)太阳能科技有限公司 | 太阳能电池以及太阳能电池的制备方法 |
CN115483298A (zh) * | 2022-09-27 | 2022-12-16 | 常州时创能源股份有限公司 | 一种N型晶体硅TOPCon电池结构及其制备方法 |
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Effective date of registration: 20240207 Address after: 3rd Floor, No. 83 Cuifeng East Road, Qujing City, Yunnan Province, 655000 Applicant after: Yunnan Runyang Century Photovoltaic Technology Co.,Ltd. Country or region after: China Address before: No. 88, Lijiang Road, Yancheng Economic and Technological Development Zone, Yancheng City, Jiangsu Province 224000 Applicant before: Jiangsu Runyang century Photovoltaic Technology Co.,Ltd. Country or region before: China |
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