CN111540794A - 一种p型钝化接触太阳能电池及其制作方法 - Google Patents
一种p型钝化接触太阳能电池及其制作方法 Download PDFInfo
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- CN111540794A CN111540794A CN202010407293.0A CN202010407293A CN111540794A CN 111540794 A CN111540794 A CN 111540794A CN 202010407293 A CN202010407293 A CN 202010407293A CN 111540794 A CN111540794 A CN 111540794A
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- 238000002161 passivation Methods 0.000 title claims abstract description 117
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 95
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 95
- 239000010703 silicon Substances 0.000 claims abstract description 95
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 94
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 48
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 46
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 24
- 239000002585 base Substances 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 6
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- 238000010248 power generation Methods 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 7
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- 230000009286 beneficial effect Effects 0.000 abstract description 2
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- 238000005498 polishing Methods 0.000 description 3
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
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CN202010407293.0A CN111540794B (zh) | 2020-05-14 | 2020-05-14 | 一种p型钝化接触太阳能电池及其制作方法 |
PCT/CN2021/074586 WO2021227568A1 (zh) | 2020-05-14 | 2021-02-01 | 一种p型钝化接触太阳能电池及其制作方法 |
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CN111540794A true CN111540794A (zh) | 2020-08-14 |
CN111540794B CN111540794B (zh) | 2022-07-12 |
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WO (1) | WO2021227568A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112909100A (zh) * | 2021-01-18 | 2021-06-04 | 中山德华芯片技术有限公司 | 一种太阳能电池及其制备方法 |
WO2021227568A1 (zh) * | 2020-05-14 | 2021-11-18 | 浙江正泰太阳能科技有限公司 | 一种p型钝化接触太阳能电池及其制作方法 |
CN115207135A (zh) * | 2022-06-30 | 2022-10-18 | 湖南红太阳光电科技有限公司 | 一种perc电池的制备方法 |
WO2023284771A1 (zh) | 2021-07-14 | 2023-01-19 | 天合光能股份有限公司 | 选择性钝化接触电池及其制备方法 |
CN117457759A (zh) * | 2023-12-22 | 2024-01-26 | 浙江爱旭太阳能科技有限公司 | 双面太阳能电池片、电池组件和光伏系统 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114464687B (zh) * | 2021-12-28 | 2024-05-10 | 浙江爱旭太阳能科技有限公司 | 一种局部双面隧穿钝化接触结构电池及其制备方法 |
CN115020507A (zh) * | 2022-06-15 | 2022-09-06 | 英利能源发展有限公司 | 一种选择性钝化接触电池及其制备方法 |
CN115125510A (zh) * | 2022-06-22 | 2022-09-30 | 中威新能源(成都)有限公司 | 化学气相沉积方法、载具、电池片及异质结电池 |
CN115084299A (zh) * | 2022-06-23 | 2022-09-20 | 浙江爱旭太阳能科技有限公司 | 一种p型太阳能电池及其制作方法、电池组件和光伏系统 |
CN116864546B (zh) * | 2023-07-28 | 2024-03-29 | 云南润阳世纪光伏科技有限公司 | 一种背poly太阳能电池及其制备方法 |
Citations (7)
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CN103422175A (zh) * | 2013-08-30 | 2013-12-04 | 昊诚光电(太仓)有限公司 | 太阳能电池硅片的抛光方法 |
CN106784129A (zh) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 背发射结背面隧道氧化钝化接触高效电池的制作方法 |
CN109524480A (zh) * | 2018-11-26 | 2019-03-26 | 东方日升(常州)新能源有限公司 | 一种局域接触钝化的p型晶硅太阳电池及其制备方法 |
CN110690297A (zh) * | 2019-10-12 | 2020-01-14 | 通威太阳能(安徽)有限公司 | 一种p型隧穿氧化物钝化接触太阳能电池及其制备方法 |
CN110828583A (zh) * | 2019-09-24 | 2020-02-21 | 苏州腾晖光伏技术有限公司 | 正面局域钝化接触的晶硅太阳电池及其制备方法 |
CN110890432A (zh) * | 2019-11-21 | 2020-03-17 | 协鑫集成科技股份有限公司 | 一种高效多晶硅太阳能电池及其制备方法 |
CN110931603A (zh) * | 2019-12-11 | 2020-03-27 | 晶澳(扬州)太阳能科技有限公司 | 太阳能电池及其制备方法 |
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---|---|---|---|---|
NL2019634B1 (en) * | 2017-09-27 | 2019-04-03 | Univ Delft Tech | Solar cells with transparent contacts based on poly-silicon-oxide |
CN110137274A (zh) * | 2019-05-24 | 2019-08-16 | 通威太阳能(安徽)有限公司 | 一种双面钝化接触的p型高效电池及其制备方法 |
CN110610998A (zh) * | 2019-09-24 | 2019-12-24 | 苏州腾晖光伏技术有限公司 | 一种正面局域钝化接触的晶硅太阳电池及其制备方法 |
CN210349847U (zh) * | 2019-10-12 | 2020-04-17 | 通威太阳能(安徽)有限公司 | 一种p型隧穿氧化物钝化接触太阳能电池 |
CN111540794B (zh) * | 2020-05-14 | 2022-07-12 | 浙江正泰太阳能科技有限公司 | 一种p型钝化接触太阳能电池及其制作方法 |
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2020
- 2020-05-14 CN CN202010407293.0A patent/CN111540794B/zh active Active
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2021
- 2021-02-01 WO PCT/CN2021/074586 patent/WO2021227568A1/zh active Application Filing
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021227568A1 (zh) * | 2020-05-14 | 2021-11-18 | 浙江正泰太阳能科技有限公司 | 一种p型钝化接触太阳能电池及其制作方法 |
CN112909100A (zh) * | 2021-01-18 | 2021-06-04 | 中山德华芯片技术有限公司 | 一种太阳能电池及其制备方法 |
CN112909100B (zh) * | 2021-01-18 | 2022-04-12 | 中山德华芯片技术有限公司 | 一种太阳能电池及其制备方法 |
WO2023284771A1 (zh) | 2021-07-14 | 2023-01-19 | 天合光能股份有限公司 | 选择性钝化接触电池及其制备方法 |
CN115207135A (zh) * | 2022-06-30 | 2022-10-18 | 湖南红太阳光电科技有限公司 | 一种perc电池的制备方法 |
CN117457759A (zh) * | 2023-12-22 | 2024-01-26 | 浙江爱旭太阳能科技有限公司 | 双面太阳能电池片、电池组件和光伏系统 |
CN117457759B (zh) * | 2023-12-22 | 2024-03-29 | 浙江爱旭太阳能科技有限公司 | 双面太阳能电池片、电池组件和光伏系统 |
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