WO2021220696A1 - 選択成膜方法 - Google Patents

選択成膜方法 Download PDF

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Publication number
WO2021220696A1
WO2021220696A1 PCT/JP2021/013295 JP2021013295W WO2021220696A1 WO 2021220696 A1 WO2021220696 A1 WO 2021220696A1 JP 2021013295 W JP2021013295 W JP 2021013295W WO 2021220696 A1 WO2021220696 A1 WO 2021220696A1
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Prior art keywords
film
selective
gas
forming method
selectively
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PCT/JP2021/013295
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English (en)
French (fr)
Inventor
秀司 東雲
好太 梅澤
勝利 石井
亮 清水
章伸 寺本
智之 諏訪
泰雪 白井
武蔵 間脇
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東京エレクトロン株式会社
国立大学法人東北大学
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Application filed by 東京エレクトロン株式会社, 国立大学法人東北大学 filed Critical 東京エレクトロン株式会社
Priority to KR1020227040209A priority Critical patent/KR20230005231A/ko
Priority to US17/922,255 priority patent/US20230175115A1/en
Publication of WO2021220696A1 publication Critical patent/WO2021220696A1/ja

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Definitions

  • This disclosure relates to a selective film formation method.
  • Patent Document 1 as a method of selectively forming a thin film on a substrate to be treated in a state where the conductive film and the insulating film are exposed on the surface, the first surface which is the exposed surface of the conductive film is Ru, RuO 2. , Pt, Pd, CuO and CuO 2 , and a method of selectively forming a Ru film only on the first surface using Ru (EtCp) 2 gas and O 2 gas has been proposed. ..
  • the present disclosure provides a highly versatile selective film formation method using a simple method.
  • the selective film forming method comprises a substrate including a first film having a first surface and a second film having a second surface different from the first film. Preparing, selectively adsorbing a secondary alcohol gas and / or a tertiary alcohol gas on the second surface, and supplying at least a raw material gas to selectively film the first surface. To form and have.
  • a substrate having a metal film having a natural oxide film formed on its surface and an insulating film is prepared, and the natural oxide film is reduced and removed to obtain the above.
  • FIG. 1 is a flowchart showing a selective film forming method according to the first embodiment
  • FIGS. 2A to 2C are process cross-sectional views showing each step shown in FIG.
  • a substrate 1 in which a first film 11 and a second film 12 made of a material different from the first film 11 are formed on a semiconductor substrate (for example, Si) 10 as shown in FIG. 2A is prepared.
  • the first film 11 has a first surface 21 and the second film 12 has a second surface 22.
  • the substrate 1 is placed on a stage provided in the processing chamber.
  • a metal film can be mentioned as the first film 11, and any one of Cu, Ru, Co, Ti, and TiN, or a combination thereof (at least one of Cu, Ru, Co, Ti, and TiN) can be mentioned as a preferable example. Is exemplified.
  • an insulating film can be mentioned, and as a preferable example , any one of SiO x , SiOC, SiOCN, SiN, or a combination thereof ( at least one of SiO x , SiOC, SiOCN, SiN). Is exemplified.
  • step 2 is performed by introducing a secondary alcohol gas and / or a tertiary alcohol gas into the chamber in which the substrate 1 is housed.
  • the organic layer 31 formed by adsorption need only be adsorbed on the entire surface of the second surface 22, and does not need to be a film.
  • the organic layer 31 functions as a blocking material that blocks the film formation on the second surface 22 at the time of the next film formation.
  • a secondary alcohol is an alcohol in which a carbon atom having a hydroxy group (-OH group) is bonded to two other carbon atoms
  • a tertiary alcohol is an alcohol in which a carbon atom having a hydroxy group is another. It is an alcohol bonded to 3 carbon atoms.
  • Examples of the secondary alcohol include isopropyl alcohol (IPA) and 2-butanol.
  • Examples of the tertiary alcohol include tert-butyl alcohol (2-methyl-2-propanol) and 2-methyl-2-butanol. However, these are only examples and are not limited to these.
  • Secondary alcohols and tertiary alcohols are dehydrogenated as compared to normal type alcohols such as ethanol, 1-propanol and 1-butanol (primary alcohols (alcohols with hydroxy groups attached to terminal carbon atoms)).
  • the starting temperature is low, and the adsorption temperature can be lowered by about 50 ° C.
  • IPA gas has a large tendency. This is because in primary alcohols, dehydrogenation produces aldehydes, whereas in secondary and tertiary alcohols, dehydrogenation produces ketones.
  • aldehydes acetaldehyde, propanal, etc.
  • ketones acetone, methyl ethyl ketone, etc.
  • secondary alcohols and tertiary alcohols are colder. Dehydrogenation reaction occurs and adsorbs.
  • the adsorption of the secondary alcohol gas and / or the tertiary alcohol gas can be carried out in the temperature range of 100 to 350 ° C. More preferably, it is in the range of 100 to 250 ° C. Depending on the alcohol used, the temperature range can be 100 to 150 ° C., and in particular, when IPA gas is used, this temperature range of 100 to 150 ° C. is preferable.
  • the time of step 2 is preferably set to such a time that the organic layer 31 can be adsorbed on the entire surface of the second surface 22.
  • the secondary alcohol gas and the tertiary alcohol gas are relatively easy to adsorb, and can be adsorbed in a relatively short time of 1 to 60 sec.
  • Alcohol gas is easily adsorbed on the surface of the insulating film, but has the property of being difficult to be adsorbed on the surface of a metal film such as Cu. Therefore, when the first film 11 is a metal film and the second film 12 is an insulating film, the alcohol gas can be selectively adsorbed on the second surface 22.
  • the organic layer 31 is selectively adsorbed on the second surface 22 in the relatively low temperature range as described above to form the organic layer 31. Can be formed.
  • the temperature of the process after the metal film is formed is low.
  • the metal film, that is, Cu is exposed, so that the temperature is particularly required to be lowered.
  • the temperature of step 2 can be lowered by using a secondary alcohol gas and / or a tertiary alcohol gas as the adsorbed gas in step 2, so that adverse effects such as Cu migration are adversely affected. It can be suppressed.
  • step 3 If the film formation process of step 3 performed after that, which will be described below, can be lowered in temperature, it is expected that the migration of the metal film and the like can be suppressed more effectively and the selectivity of film formation is further enhanced.
  • NS If the adsorption process in step 2 is performed at a high temperature, the metal film is adversely affected as described above, and when the next film formation is performed at a low temperature, the temperature of the chamber is changed or another chamber is used. Will be required and productivity will decrease.
  • step 3 At least the raw material gas (precursor) is supplied to selectively form the film 41 on the first surface 21 (step 3, FIG. 2C).
  • the selective film forming property of step 3 is realized by the blocking function of the organic layer 31.
  • the film formation at this time may be carried out by the reaction of the raw material gas (precursor) and the reaction gas (reactant), or by the thermal decomposition of the raw material gas (precursor).
  • the film When the film is formed by the reaction between the precursor and the reactor, it can be formed by ALD or CVD. Of these, ALD in which a precursor and a reactor are alternately adsorbed to form a film by a surface reaction is preferable. In the case of ALD, the organic layer 31 inhibits the adsorption of the precursor to the second surface 22 to block the surface reaction. Therefore, the selective film forming property of the film 41 can be maintained high.
  • the temperature at this time is preferably 450 ° C. or lower.
  • the film When the film is formed by the decomposition reaction of the precursor, it can be carried out by CVD.
  • CVD As an example of forming a film by the decomposition reaction of the precursor, when a Co film is formed using cobalt carbonyl (Co 2 (CO) 8 ) as the raw material gas, ruthenium carbonyl (Ru 3 (CO) 12 ) is used as the raw material gas. The case of forming a Ru film can be mentioned.
  • the film 41 is not particularly limited, and may be a metal film or an insulating film. Further, the combination of the precursor and the reactor is not particularly limited as long as the blocking function of the organic layer 31 can be maintained for a necessary period in the film forming process.
  • any one of Ru, Cu, Co, Ti, and TiN, or a combination thereof is exemplified as a suitable example.
  • the film 41 is an insulating film, SiO x Suitable examples, SiOC, SiOCN, SiN, Al x O y, HfO x, ZrO x, TiO x, TiON , or a combination thereof, (SiO x, SiOC, SiOCN , SiN, Al x Oy , HfO x , ZrO x , TiO x , at least one of TION).
  • the precursor for forming the film various ones can be used depending on the film to be formed, and it may be an organic compound or an inorganic compound, but an organic compound is more preferable.
  • the reactor at the time of film formation one corresponding to the film to be formed may be used, but H 2 O and H 2 are preferably used from the viewpoint of exerting the blocking function of the organic layer 31. be able to.
  • H 2 O As the reactor, an oxide film is formed as the film 41, and by using H 2 , a metal film is formed.
  • the film formation temperature is preferably 450 ° C. or lower, more preferably 350 ° C. or lower.
  • O 2 is also preferable as the reactor, and an oxide film or a metal film is formed by using O 2.
  • the film formation temperature is preferably 300 ° C. or lower, more preferably 250 ° C. or lower.
  • a nitride film may be formed by using a nitride such as NH 3 as the reactor, and another film may be formed by using another reactor.
  • Preferable examples of the material of the film 41, the precursor and the reactor, and the temperature at that time are exemplified as follows.
  • steps 2 and 3 are preferably performed in a vacuum atmosphere, and can be performed in the range of 13 to 1333 Pa, for example. Further, steps 2 and 3 can be continuously performed in the same chamber. When steps 2 and 3 are performed in the same chamber, it is preferable to perform both steps at the same temperature.
  • steps 2 and 3 may be repeated alternately two or more times.
  • the organic layer 31 may be eroded during the film formation depending on the type of reactor in step 3, but by repeating steps 2 and 3, the film 41 is desired.
  • the blocking function of the organic layer 31 can be maintained until the film thickness is reached, and selective film formation can be performed.
  • the selective film forming technique shown in Patent Document 1 focuses on forming a conductive film on a conductive film and forming an insulating film on an insulating film, and forms a base film and a film for selective film formation. Membrane materials, precursors and reactors are limited.
  • a simple method of selectively adsorbing a general organic compound such as a secondary alcohol gas such as IPA or a tertiary alcohol gas to function as a blocking material for blocking film formation It is possible to realize a highly versatile selective film formation with few restrictions by a simple method.
  • a secondary alcohol gas such as IPA or a tertiary alcohol gas can lower the adsorption temperature, which is advantageous when a metal film such as Cu is present. Further, since these are easy to handle and have relatively high adsorptivity, they do not require much labor and the processing time is short. It also has the advantage of having a wide applicable temperature range.
  • FIG. 3 is a flowchart showing the selective film forming method according to the second embodiment
  • FIG. 4 is a process cross-sectional view showing each step shown in FIG.
  • a substrate 1'in which the metal film 51 and the insulating film 52 are formed on the semiconductor substrate (for example, Si) 10 and the natural oxide film 51a is formed on the surface of the metal film 51 is prepared.
  • the insulating film 52 has a second surface 62. In this step 11, specifically, the substrate 1'is placed on a stage provided in the processing chamber.
  • any one of Cu, Ru, Co, Ti and TiN, or a combination thereof (at least one of Ru, Cu, CoTi and TiN) is exemplified.
  • the insulating film 52 any one of SiO x , SiOC, SiOCN, SiN, or a combination thereof ( at least one of SiO x , SiOC, SiOCN, SiN) is exemplified.
  • the natural oxide film 51a is an oxide film formed on the surface of the metal film 51, and at least one kind of oxide film of Cu, Ru, Co, and Ti is exemplified.
  • a reduction treatment is performed on the entire surface to reduce and remove the natural oxide film 51a to expose the first surface 61 of the metal film 51 (step 12, FIG. 4B).
  • a reduction treatment is performed on the entire surface to reduce and remove the natural oxide film 51a to expose the first surface 61 of the metal film 51 (step 12, FIG. 4B).
  • the natural oxide film 51a is removed while the second surface 62 of the insulating film 52 remains as it is.
  • the reason why the natural oxide film 51a is removed is that an organic compound containing an ⁇ OH group is easily adsorbed on the metal oxide film, and it is difficult to obtain selective adsorption property.
  • This step 12 can be performed by hydrogen annealing or hydrogen plasma treatment.
  • the temperature at this time is preferably 500 ° C. or lower, more preferably 400 ° C. or lower, more preferably 250 to 400 ° C. for hydrogen annealing, and more preferably a temperature lower than hydrogen annealing, for example, 400 ° C. or lower for hydrogen plasma treatment.
  • the substrate 1' is annealed while introducing hydrogen gas (H 2 gas) into the chamber containing the substrate 1'.
  • hydrogen plasma treatment hydrogen plasma is applied to the substrate 1'in the chamber.
  • the reduction treatment in step 12 can also be carried out using an organic compound containing an ⁇ OH group. In this case, the same treatment as the adsorption step of the next step 13 can be performed.
  • hydrogen annealing and hydrogen plasma treatment are preferable.
  • the secondary alcohol gas and / or the tertiary alcohol gas is selectively adsorbed on the second surface 62 of the insulating film 52 (step 13, FIG. 4C).
  • This step 13 can be performed in the same manner as step 2 of the first embodiment.
  • the organic layer 31 formed by adsorption has selective adsorptivity and blocking function as in the first embodiment, is selectively adsorbed on the second surface 62, and is second surface during film formation. Blocks film formation on 62.
  • isopropyl alcohol (IPA) and 2-butanol can be used as the secondary alcohol, and for example, tert-butyl alcohol (2-methyl-2-propanol) can be used as the tertiary alcohol.
  • 2-Methyl-2-butanol can be used.
  • the processing temperature is the same as in step 2 of the first embodiment.
  • step 14 At least the raw material gas (precursor) is supplied to selectively form the film 41 on the first surface 61 (step 14, FIG. 4D).
  • the selective film forming property of step 14 is realized by the blocking function of the organic layer 31.
  • the film formation at this time may be carried out by the reaction between the raw material gas (precursor) and the reaction gas (reactant), or by thermal decomposition of the raw material gas (precursor), as in step 3 of the first embodiment.
  • the film When the film is formed by the reaction of the precursor and the reactor, it can be formed by ALD or CVD, but ALD is preferable.
  • the film is formed by the decomposition reaction of the precursor, it can be carried out by CVD.
  • the precursor, the reactor, the combination thereof, the temperature, and the like when carrying out this step 14 are the same as those in step 3 of the first embodiment.
  • steps 12 to 14 are preferably performed in a vacuum atmosphere, and can be performed in the range of 13 to 1333 Pa, for example. Further, steps 12 to 14 can be continuously performed in the same chamber. When steps 12 to 14 are performed in the same chamber, it is preferable to perform these steps at the same temperature. Similar to steps 2 and 3 of the first embodiment, steps 13 and 14 may be repeated alternately two or more times.
  • a blocking material that selectively adsorbs a general organic compound such as a secondary alcohol gas such as IPA or a tertiary alcohol gas to block the film formation.
  • a secondary alcohol gas such as IPA or a tertiary alcohol gas can lower the adsorption temperature, which is advantageous when a metal film such as Cu is present.
  • FIGS. 5 to 8 The analysis results based on the IR spectrum at that time are shown in FIGS. 5 to 8.
  • ethanol as shown in FIG. 5, it was confirmed that dehydrogenation was started at around 150 ° C. to generate acetaldehyde, and the amount of acetaldehyde increased as the temperature increased.
  • 1-propanol as shown in FIG. 6, it was confirmed that dehydrogenation was similarly started at around 150 ° C. to produce propanol, and the amount of propanol increased as the temperature increased.
  • 1-butanol as shown in FIG. 8, it was confirmed that dehydrogenation was similarly started at around 150 ° C. to produce butanol, and the amount of butanol increased as the temperature increased.
  • the dehydrogenation start temperature is around 150 ° C., and aldehydes may be produced by dehydrogenation. confirmed.
  • IPA which is a secondary alcohol
  • acetone which is a ketone
  • the dehydrogenation start temperature is about 100 ° C., which is lower than that of other gases. It was confirmed that. That is, in the case of IPA, it was confirmed that IPA was decomposed at a low temperature of 100 ° C. to produce acetone, which was adsorbed on the surface to form an organic layer.
  • a substrate on which a first film (metal film) and a second film (insulating film) are formed is schematically described (FIGS. 2A to 2C, FIGS. 4A to 4D).
  • first film and the second film can take various forms depending on the device to be applied.
  • the present invention is not limited to this, and it can be applied to the selective film formation on three or more films.

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Abstract

選択成膜方法は、第１の表面を有する第１の膜と、第２の表面を有する第１の膜とは異なる第２の膜とを含む基板を準備することと、第２級アルコールガスおよび／または第３級アルコールガスを第２の表面に選択的に吸着させることと、少なくとも原料ガスを供給して第１の表面に選択的に膜を形成することとを有する。

Description

選択成膜方法
　本開示は、選択成膜方法に関する。
　半導体装置の製造工程においては、一般的に、フォトリソグラフィおよびエッチングによりパターン形成が行われている。しかし、近時、半導体デバイスの微細化が益々進んでおり、フォトリソグラフィ精度の限界に達している。
　このため、配線等の金属膜と絶縁膜とが混在する表面に対して、例えば金属膜に選択的かつ自己整合的に所望の膜を成膜する技術が求められている。
　特許文献１には、表面に導電膜および絶縁膜が露出した状態の被処理基板上に薄膜を選択的に成膜させる方法として、導電膜の露出表面である第１の表面がＲｕ、ＲｕＯ２、Ｐｔ、Ｐｄ、ＣｕＯおよびＣｕＯ２のいずれかであり、Ｒｕ（ＥｔＣｐ）２ガスとＯ２ガスとを用いて第１の表面のみに選択的にＲｕ膜を成膜する方法が提案されている。
特開２０１９－６２１４２号公報
　本開示は、簡易な手法で汎用性が高い選択成膜方法を提供する。
　本開示の第１の態様に係る選択成膜方法は、第１の表面を有する第１の膜と、第２の表面を有する前記第１の膜とは異なる第２の膜とを含む基板を準備することと、第２級アルコールガスおよび／または第３級アルコールガスを前記第２の表面に選択的に吸着させることと、少なくとも原料ガスを供給して前記第１の表面に選択的に膜を形成することと、を有する。
　本開示の第２の態様に係る選択成膜方法は、表面に自然酸化膜が形成された金属膜と、絶縁膜とを有する基板を準備することと、前記自然酸化膜を還元除去し、前記金属膜の第１の表面を露出させることと、第２級アルコールガスおよび／または第３級アルコールガスを前記絶縁膜の第２の表面に選択的に吸着させることと、少なくとも原料ガスを供給して前記第１の表面に選択的に膜を形成することと、を有する。
　本発明によれば、簡易で汎用性が高い選択成膜方法が提供される。
第１の実施形態に係る選択成膜方法を示すフローチャートである。 図１のステップ１を示す工程断面図である。 図１のステップ２を示す工程断面図である。 図１のステップ３を示す工程断面図である。 第２の実施形態に係る選択成膜方法を示すフローチャートである。 図３のステップ１１を示す工程断面図である。 図３のステップ１２を示す工程断面図である。 図３のステップ１３を示す工程断面図である。 図３のステップ１４を示す工程断面図である。 エタノールの分解特性を示す図である。 １－プロパノールの分解特性を示す図である。 ＩＰＡの分解特性を示す図である。 １－ブタノールの分解特性を示す図である。
　以下、添付図面を参照して本発明の実施の形態について説明する。
　＜第１の実施形態＞
　図１は第１の実施形態に係る選択成膜方法を示すフローチャート、図２Ａ～図２Ｃは図１に示す各工程を示す工程断面図である。
　最初に、図２Ａに示すような、半導体基体（例えばＳｉ）１０上に、第１の膜１１と第１の膜１１とは異なる材料の第２の膜１２が形成された基板１を準備する（ステップ１）。第１の膜１１は第１の表面２１を有しており、第２の膜１２は第２の表面２２を有している。このステップ１では、具体的には、処理チャンバー内に設けられたステージ上に基板１が載置された状態とされる。
　第１の膜１１としては金属膜を挙げることができ、好適な例としてＣｕ、Ｒｕ、Ｃｏ、Ｔｉ、ＴｉＮのいずれか、またはこれらの組み合わせ（Ｃｕ、Ｒｕ、Ｃｏ、Ｔｉ、ＴｉＮの少なくとも一種）が例示される。また、第２の膜１２としては絶縁膜を挙げることができ、好適な例としてＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮのいずれか、またはこれらの組み合わせ（ＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮの少なくとも一種）が例示される。
　次に、第２級アルコールガスおよび／または第３級アルコールガスを第２の膜１２の第２の表面２２に選択的に吸着させる（ステップ２、図２Ｂ）。このステップ２は、基板１が収容されたチャンバー内に、第２級アルコールガスおよび／または第３級アルコールガスを導入することにより行われる。吸着により形成された有機層３１は第２の表面２２の全面に吸着されていればよく、膜になっている必要はない。有機層３１は、次の成膜の際に、第２の表面２２への成膜をブロックするブロッキング材として機能する。
　第２級アルコールは、ヒドロキシ基（－ＯＨ基）がついた炭素原子が他の炭素原子２個と結合しているアルコールであり、第３級アルコールは、ヒドロキシ基がついた炭素原子が他の炭素原子３個と結合しているアルコールである。
　第２級アルコールとしては、例えば、イソプロピルアルコール（ＩＰＡ）、２－ブタノールを挙げることができる。また、第３級アルコールとしては、例えばターシャリブチルアルコール（２－メチル－２－プロパノール）、２－メチル－２－ブタノールを挙げることができる。ただし、これらは一例にすぎずこれらに限るものではない。
　第２級アルコールおよび第３級アルコールは、エタノール、１－プロパノール、１－ブタノール等のノルマルタイプのアルコール（第１級アルコール（ヒドロキシ基が末端の炭素原子についたアルコール））に比較して脱水素開始温度が低く、吸着温度を５０℃程度低くすることができる。特に、ＩＰＡガスはその傾向が大きい。これは、第１級アルコールでは、脱水素により生成されるのはアルデヒドであるのに対し、第２級アルコールおよび第３級アルコールでは、脱水素によりケトンが生成されるからである。すなわち、アルデヒド（アセトアルデヒド、プロパナール等）は生成温度が比較的高いのに対し、ケトン（アセトン、メチルエチルケトン等）はそれよりも生成温度が低いため、第２級アルコールおよび第３級アルコールのほうが低温で脱水素反応が生じて吸着する。
　ステップ２において第２級アルコールガスおよび／または第３級アルコールガスの吸着は１００～３５０℃の温度範囲で実施することができる。より好ましくは１００～２５０℃の範囲である。用いるアルコールによっては１００～１５０℃の温度範囲で実施することができ、特に、ＩＰＡガスを用いる場合はこの１００～１５０℃の温度範囲が好適である。ステップ２の時間は、有機層３１が第２の表面２２の全面に吸着できる程度の時間に設定することが好ましい。第２級アルコールガスおよび第３級アルコールガスは比較的吸着しやすく、１～６０ｓｅｃと比較的短時間で吸着させることができる。
　アルコールガスは絶縁膜表面には吸着しやすいが、Ｃｕ等の金属膜表面には吸着し難い性質を有する。このため、第１の膜１１が金属膜で第２の膜１２が絶縁膜の場合に、アルコールガスを第２の表面２２に選択的に吸着させることができる。本実施形態ではアルコールガスとして第２級アルコールガスおよび／または第３級アルコールガスを用いるため、上述のような比較的低い温度範囲で第２の表面２２に選択的に吸着させて有機層３１を形成することができる。
　金属膜がＣｕの場合、Ｃｕは温度に対して非常にセンシティブで非常にマイグレーションしやすいことから、金属膜が成膜された後のプロセスの温度は低温であることが好ましい。特に、ステップ２の吸着させる処理を行う際には、金属膜すなわちＣｕが露出した状態となっているので、特に低温化が要求される。これに対して、本実施形態では、ステップ２の吸着ガスとして第２級アルコールガスおよび／または第３級アルコールガスを用いてステップ２を低温化することができるので、Ｃｕのマイグレーション等の悪影響を抑制することができる。そして、以下に説明する、その後に行われるステップ３の成膜処理が低温化できるものであれば、金属膜のマイグレーション等をより有効に抑制でき、成膜の選択性をより高めることが期待される。ステップ２の吸着させる処理が高温で行われる場合には、上述のように金属膜に悪影響が及ぼされる他、次の成膜を低温で行う際に、チャンバーの温度を変更すること、または別チャンバーを用いることが必要となり、生産性が低下する。
　次に、少なくとも原料ガス（プリカーサ）を供給して、第１の表面２１に選択的に膜４１を形成する（ステップ３、図２Ｃ）。このステップ３の選択成膜性は、有機層３１のブロッキング機能により実現される。このときの成膜は、原料ガス（プリカーサ）と反応ガス（リアクタント）との反応によってもよいし、原料ガス（プリカーサ）の熱分解によってもよい。
　プリカーサとリアクタントとの反応により成膜する場合は、ＡＬＤまたはＣＶＤにより行うことができる。これらのうち、プリカーサとリアクタントを交互に吸着させて表面反応により成膜するＡＬＤのほうが好ましい。ＡＬＤの場合、有機層３１がプリカーサの第２の表面２２への吸着を阻害して表面反応をブロックする。このため、膜４１の選択成膜性を高く維持することができる。この際の温度は、４５０℃以下であることが好ましい。
　プリカーサの分解反応により成膜する場合は、ＣＶＤにより行うことができる。プリカーサの分解反応により成膜する例としては、原料ガスとしてコバルトカルボニル（Ｃｏ２（ＣＯ）８）を用いてＣｏ膜を形成する場合、原料ガスとしてルテニウムカルボニル（Ｒｕ３（ＣＯ）１２）を用いてＲｕ膜を形成する場合を挙げることができる。
　膜４１は特に限定されず、金属膜でも絶縁膜でもよい。また、プリカーサとリアクタントの組み合わせも、成膜過程で有機層３１のブロッキング機能を必要な期間維持できれば特に限定されない。
　膜４１が金属膜の場合、好適な例としてＲｕ、Ｃｕ、Ｃｏ、Ｔｉ、ＴｉＮのいずれか、またはこれらの組み合わせ（Ｒｕ、Ｃｕ、Ｃｏ、Ｔｉ、ＴｉＮの少なくとも一種）が例示される。また、膜４１が絶縁膜の場合、好適な例としてＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮ、ＡｌｘＯｙ、ＨｆＯｘ、ＺｒＯｘ、ＴｉＯｘ、ＴｉＯＮ、またはこれらの組み合わせ（ＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮ、ＡｌｘＯｙ、ＨｆＯｘ、ＺｒＯｘ、ＴｉＯｘ、ＴｉＯＮの少なくとも一種）が例示される。
　膜形成の際のプリカーサとしては成膜しようとする膜に応じて種々のものを用いることができ、有機化合物であっても無機化合物であってもよいが、有機化合物がより好ましい。また、膜形成の際のリアクタントとしては、成膜しようとする膜に応じたものを使用すればよいが、有機層３１のブロッキング機能を発揮させる観点から、Ｈ２Ｏ、Ｈ２を好適に用いることができる。リアクタントとしてＨ２Ｏを用いることにより膜４１として酸化膜が形成され、Ｈ２を用いることにより金属膜が形成される。リアクタントとしてＨ２ＯまたはＨ２を用いた場合は、成膜温度は４５０℃以下が好ましく、３５０℃以下がより好ましい。また、リアクタントとしてはＯ２も好ましく、Ｏ２を用いることにより酸化膜または金属膜が形成される。リアクタントとしてＯ２を用いた場合は、成膜温度は３００℃以下が好ましく、２５０℃以下がより好ましい。もちろん、リアクタントとしてＮＨ３等の窒化剤を用いて窒化膜を形成してもよく、さらに他のリアクタントを用いて他の膜を形成してもよい。
　膜４１の材料と、プリカーサおよびリアクタントの好適な例、その際の温度としては以下のようなものが例示される。
　（１）膜４１の材料：Ｒｕ
　　　　プリカーサ：Ｒｕ（ＥｔＣｐ）２
　　　　リアクタント：Ｏ２
　　　　温度：３００℃以下
　（２）膜４１の材料：ＡｌＯ
　　　　プリカーサ：ＴＭＡ（トリメチルアルミニウム）
　　　　リアクタント：Ｈ２Ｏ
　　　　温度：４５０℃以下
（３）膜４１の材料：Ｃｏ
　　　　プリカーサ：Ｃｏ２（ＣＯ）８
　　　　リアクタント：なし
　　　　温度：３００℃以下
（４）膜４１の材料：ＴｉＯｘ
　　　　プリカーサ：Ｔｉ（ＮＭｅ２）４
　　　　リアクタント：Ｈ２Ｏ
　　　　温度：５０～２５０℃
（５）膜４１の材料：ＨｆＯｘ
　　　　プリカーサ：Ｈｆ（ＮＭｅ２）４
　　　　リアクタント：Ｈ２Ｏ
　　　　温度：５０～４００℃
（６）膜４１の材料：ＳｉＯｘ
プリカーサ：ＳｉＨ（ＮＭｅ２）４
リアクタント：Ｈ２Ｏ
温度：～４００℃
　上記ステップ２およびステップ３は、真空雰囲気で行うことが好ましく、例えば、１３～１３３３Ｐａの範囲で行うことができる。また、ステップ２およびステップ３は同一のチャンバーで連続して行うことができる。ステップ２およびステップ３を同一のチャンバーで行う場合は、両ステップを同じ温度で行うことが好ましい。
　上記ステップ２およびステップ３は、２回以上交互に繰り返してもよい。膜４１の成膜の際に、ステップ３のリアクタントの種類によっては、成膜の際に有機層３１が侵食される場合があるが、ステップ２とステップ３を繰り返すことにより、膜４１が所望の膜厚に達するまで有機層３１のブロッキング機能を維持して選択成膜を行うことができる。
　特許文献１に示された選択成膜技術は、導電膜上に導電膜を形成し、絶縁膜上に絶縁膜を形成することを主眼としており、選択成膜のための下地膜および成膜する膜の材料、プリカーサおよびリアクタントが限定される。これに対して、本実施形態では、ＩＰＡのような第２級アルコールガスや第３級アルコールガスといった一般的な有機化合物を選択的に吸着させて成膜をブロックするブロッキング材として機能させるという簡易な手法で、制約が少なく汎用性の高い選択成膜を実現できる。また、ＩＰＡのような第２級アルコールガスや第３級アルコールガスは吸着温度を低くすることができるのでＣｕ等の金属膜が存在する場合に有利である。また、これらは取り扱いが容易であり、比較的高い吸着性を有するので、手間がかからず処理時間も短い。また、適用温度範囲が広いというメリットもある。
　＜第２の実施形態＞
　図３は第２の実施形態に係る選択成膜方法を示すフローチャート、図４は図３に示す各工程を示す工程断面図である。
　金属は大気中に保持されることにより、その表面に不可避的に自然酸化膜が形成されるため、本実施形態では自然酸化膜を有する基板に対する選択成膜について説明する。
　最初に、図４Ａに示すような、半導体基体（例えばＳｉ）１０上に、金属膜５１と絶縁膜５２が形成され、金属膜５１の表面に自然酸化膜５１ａが形成された基板１´を準備する（ステップ１１）。絶縁膜５２は第２の表面６２を有している。このステップ１１では、具体的には、処理チャンバー内に設けられたステージ上に基板１´を載置する。
　金属膜５１の好適な例として、Ｃｕ、Ｒｕ、Ｃｏ、Ｔｉ、ＴｉＮのいずれか、またはこれらの組み合わせ（Ｒｕ、Ｃｕ、ＣｏＴｉ、ＴｉＮの少なくとも一種）が例示される。また、絶縁膜５２の好適な例としてＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮのいずれか、またはこれらの組み合わせ（ＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮの少なくとも一種）が例示される。自然酸化膜５１ａは、金属膜５１の表面に形成される酸化膜であり、Ｃｕ、Ｒｕ、Ｃｏ、Ｔｉの少なくとも一種の酸化膜が例示される。
　次に、前処理として全面に還元処理を行い、自然酸化膜５１ａを還元除去し、金属膜５１の第１の表面６１を露出させる（ステップ１２、図４Ｂ）。このとき、絶縁膜５２の第２の表面６２はそのままの状態で、自然酸化膜５１ａのみ除去される。自然酸化膜５１ａを除去するのは、金属酸化膜には－ＯＨ基を含む有機化合物が吸着しやすく、選択吸着性が得難いからである。
　このステップ１２は、水素アニールまたは水素プラズマ処理により行うことができる。このときの温度は５００℃以下、さらには４００℃以下が好ましく、水素アニールでは２５０～４００℃がより好ましく、水素プラズマ処理では水素アニールより低い温度、例えば４００℃以下がより好ましい。水素アニールの場合は、基板１´が収容されたチャンバー内に水素ガス（Ｈ２ガス）を導入しつつ基板１´をアニールする。水素プラズマ処理の場合は、チャンバー内の基板１´に対して水素プラズマを作用させることにより行われる。ステップ１２の還元処理は、－ＯＨ基を含む有機化合物を用いて行うこともできる。この場合は、次のステップ１３の吸着工程と同時処理とすることができる。ただし、自然酸化膜が厚く形成されている場合には、水素アニール、水素プラズマ処理が好ましい。
　次に、第２級アルコールガスおよび／または第３級アルコールガスを絶縁膜５２の第２の表面６２に選択的に吸着させる（ステップ１３、図４Ｃ）。このステップ１３は、第１の実施形態のステップ２と同様に行うことができる。吸着により形成された有機層３１は第１の実施形態と同様、選択的吸着性とブロッキング機能を有し、第２の表面６２に選択的に吸着され、成膜の際に、第２の表面６２への成膜をブロックする。本実施形態においても、第２級アルコールとして、例えば、イソプロピルアルコール（ＩＰＡ）、２－ブタノールを用いることができ、第３級アルコールとしては、例えばターシャリブチルアルコール（２－メチル－２－プロパノール）、２－メチル－２－ブタノールを用いることができる。処理温度についても、第１の実施形態のステップ２と同様である。
　次に、少なくとも原料ガス（プリカーサ）を供給して、第１の表面６１に選択的に膜４１を形成する（ステップ１４、図４Ｄ）。このステップ１４の選択成膜性は、有機層３１のブロッキング機能により実現される。このときの成膜は、第１の実施形態のステップ３と同様、原料ガス（プリカーサ）と反応ガス（リアクタント）との反応によってもよいし、原料ガス（プリカーサ）の熱分解によってもよい。プリカーサとリアクタントとの反応により成膜する場合は、ＡＬＤまたはＣＶＤにより行うことができるが、ＡＬＤのほうが好ましい。プリカーサの分解反応により成膜する場合は、ＣＶＤにより行うことができる。このステップ１４を実施する際のプリカーサ、リアクタント、およびこれらの組み合わせ、ならびに温度等は、第１の実施形態のステップ３と同様である。
　上記ステップ１２～ステップ１４は、真空雰囲気で行うことが好ましく、例えば、１３～１３３３Ｐａの範囲で行うことができる。また、ステップ１２～ステップ１４は同一のチャンバーで連続して行うことができる。ステップ１２～ステップ１４を同一のチャンバーで行う場合は、これらステップを同じ温度で行うことが好ましい。第１の実施形態のステップ２およびステップ３と同様、ステップ１３およびステップ１４は、２回以上交互に繰り返してもよい。
　本実施形態においても、第１の実施形態と同様、ＩＰＡのような第２級アルコールガスや第３級アルコールガスといった一般的な有機化合物を選択的に吸着させて成膜をブロックするブロッキング材として機能させるという簡易な手法で、制約が少なく汎用性の高い選択成膜を実現できる。また、ＩＰＡのような第２級アルコールガスや第３級アルコールガスは吸着温度を低くすることができるのでＣｕ等の金属膜が存在する場合に有利である。
　＜実験例＞
　次に、実験例について説明する。
　ここでは、エタノール、１－プロパノール、ＩＰＡ、１－ブタノールのＳｉＯ配管上での分解特性を調査した。ＳｉＯ配管を４５０℃で２時間のＡｒガスベーキングを行った後、温度を上昇させながら各ガスを供給した。
　その際のＩＲスペクトルによる分析結果を図５～８に示す。エタノールの場合は、図５に示すように、１５０℃付近で脱水素が開始されてアセトアルデヒドが生成され、温度が上昇するに従いアセトアルデヒドの量が増加することが確認された。１－プロパノールの場合は、図６に示すように、同様に１５０℃付近で脱水素が開始されてプロパナールが生成され、温度が上昇するに従いプロパナールの量が増加することが確認された。１－ブタノールの場合は、図８に示すように、同様に１５０℃付近で脱水素が開始されてブタナールが生成され、温度が上昇するに従いブタナールの量が増加することが確認された。すなわち、ノルマルタイプのアルコール（第１級アルコール）であるエタノール、１－プロパノール、１－ブタノールの場合は、脱水素開始温度がいずれも１５０℃付近であり、脱水素によりアルデヒドが生成されることが確認された。
　これに対し、第２級アルコールであるＩＰＡの場合は、図７に示すように、脱水素によりケトンであるアセトンが生成され、脱水素開始温度が１００℃程度と他のガスと比較して低いことが確認された。すなわち、ＩＰＡの場合は、１００℃という低温でＩＰＡが分解してアセトンが生成され、表面に吸着して有機層が形成されることが確認された。
　＜他の適用＞
　以上、実施形態について説明したが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の特許請求の範囲およびその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。
　例えば、上記実施の形態では、基体上に第１の膜（金属膜）および第２の膜（絶縁膜）を形成した基板を模式的に記載し（図２Ａ～図２Ｃ、図４Ａ～図４Ｄ）、一般的な例について説明した。しかし、これに限らず種々のデバイスに適用することができ、第１の膜および第２の膜は、適用されるデバイスに応じて種々の形態をとることができる。また、上記実施形態では、２つの膜の表面の一方に選択的に膜形成する場合について説明したが、これに限らず、３つ以上の膜に対する選択成膜に適用することも可能である。
　１，１´；基板、１０；基体、１１；第１の膜、１２；第２の膜、２１，６１；第１の表面、２２，６２；第２の表面、３１；吸着層、４１；膜、５１；金属膜、５２；絶縁膜

Claims (30)

  1. 　第１の表面を有する第１の膜と、第２の表面を有する前記第１の膜とは異なる第２の膜とを含む基板を準備することと、
    　第２級アルコールガスおよび／または第３級アルコールガスを前記第２の表面に選択的に吸着させることと、
    　少なくとも原料ガスを供給して前記第１の表面に選択的に膜を形成することと、
    を有する選択成膜方法。
  2. 　前記第１の膜は金属膜であり、前記第２の膜は絶縁膜である、請求項１に記載の選択成膜方法。
  3. 　前記第１の膜を構成する前記金属膜は、Ｃｕ、Ｒｕ、Ｃｏ、Ｔｉ、ＴｉＮの少なくとも一種であり、前記第２の膜を構成する前記絶縁膜は、ＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮの少なくとも一種である、請求項２に記載の選択成膜方法。
  4. 　表面に自然酸化膜が形成された金属膜と、絶縁膜とを有する基板を準備することと、
    　前記自然酸化膜を還元除去し、前記金属膜の第１の表面を露出させることと、
    　第２級アルコールガスおよび／または第３級アルコールガスを前記絶縁膜の第２の表面に選択的に吸着させることと、
    　少なくとも原料ガスを供給して前記第１の表面に選択的に膜を形成することと、
    を有する選択成膜方法。
  5. 　前記自然酸化膜を還元除去することは、水素アニール処理または水素プラズマ処理により行われる、請求項４に記載の選択成膜方法。
  6. 　前記水素アニール処理または前記水素プラズマ処理は、５００℃以下の温度で行われる、請求項５に記載の選択成膜方法。
  7. 　前記水素アニール処理は２５０～４００℃の温度で行われ、前記水素プラズマ処理は４００℃以下の温度で行われる、請求項６に記載の選択成膜方法。
  8. 　前記自然酸化膜を還元除去することは、前記第２級アルコールガスおよび／または第３級アルコールガスを前記第２の表面に選択的に吸着させることを実施する際に同時に実施する、請求項４に記載の選択成膜方法。
  9. 　前記金属膜は、Ｃｕ、Ｒｕ、Ｃｏ、Ｔｉ、ＴｉＮの少なくとも一種であり、前記絶縁膜は、ＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮの少なくとも一種である、請求項４から請求項８のいずれか一項に記載の選択成膜方法。
  10. 　前記第２級アルコールガスおよび／または第３級アルコールガスを前記第２の表面に選択的に吸着させることにより吸着された有機層は、前記少なくとも原料ガスによる前記第２の表面への膜形成をブロックする機能を有する、請求項１から請求項９のいずれか一項に記載の選択成膜方法。
  11. 　前記第２級アルコールガスおよび／または第３級アルコールガスを前記第２の表面に選択的に吸着させることは、１００～３５０℃の範囲の温度で行われる、請求項１０に記載の選択成膜方法。
  12. 　前記第２級アルコールガスおよび／または第３級アルコールガスを前記第２の表面に選択的に吸着させることは、１００～２５０℃の範囲の温度で行われる、請求項１１に記載の選択成膜方法。
  13. 　前記第２級アルコールは、イソプロピルアルコールおよび／または２－ブタノールである、請求項１から請求項１２のいずれか一項に記載の選択成膜方法。
  14. 　前記第２級アルコールガスおよび／または第３級アルコールガスを前記第２の表面に選択的に吸着させることは、前記第２級アルコールガスおよび／または第３級アルコールガスとしてイソプロピルアルコールを用いる場合に、１００～１５０℃の範囲の温度で行う、請求項１３に記載の選択成膜方法。
  15. 　前記第３級アルコールは、ターシャリブチルアルコールおよび／または２－メチル－２－ブタノールである、請求項１から請求項１４のいずれか一項に記載の選択成膜方法。
  16. 　前記第２級アルコールガスおよび／または第３級アルコールガスを前記第２の表面に選択的に吸着させることと、前記第１の表面に選択的に膜を形成することは、２回以上交互に繰り返す、請求項１から請求項１５のいずれか一項に記載の選択成膜方法。
  17. 　前記第１の表面に選択的に膜を形成する工程により形成された膜は、金属膜または絶縁膜である、請求項１から請求項１６のいずれか一項に記載の選択成膜方法。
  18. 　前記第１の表面の前記金属膜は、Ｒｕ、Ｃｕ、Ｃｏ、Ｔｉ、ＴｉＮの少なくとも一種であり、前記第１の表面の前記絶縁膜は、ＳｉＯｘ、ＳｉＯＣ、ＳｉＯＣＮ、ＳｉＮ、ＡｌｘＯｙ、ＨｆＯｘ、ＺｒＯｘ、ＴｉＯｘ、ＴｉＯＮの少なくとも一種である、請求項１７に記載の選択成膜方法。
  19. 　前記第１の表面に選択的に膜を形成することは、原料ガスおよび反応ガスを供給することにより行われる、請求項１から請求項１８のいずれか一項に記載の選択成膜方法。
  20. 　前記第１の表面に選択的に膜を形成することは、ＡＬＤまたはＣＶＤにより行われる、請求項１９に記載の選択成膜方法。
  21. 　前記第１の表面に選択的に膜を形成することは、４５０℃以下の温度で行われる、請求項１９または請求項２０に記載の選択成膜方法。
  22. 　前記反応ガスとしてＨ２Ｏ、Ｈ２、Ｏ２のいずれかを用いる、請求項１９から請求項２１のいずれか一項に記載の選択成膜方法。
  23. 　前記第１の表面に選択的に膜を形成することは、原料ガスとしてＲｕ（ＥｔＣｐ）２を用い、反応ガスとしてＯ２ガスを用いて、Ｒｕ膜を形成する、請求項２２に記載の選択成膜方法。
  24. 　前記第１の表面に選択的に膜を形成することは、原料ガスとしてＴＭＡを用い、反応ガスとしてＨ２Ｏを用いて、ＡｌｘＯｙ膜を形成する、請求項２２に記載の選択成膜方法。
  25. 　前記第１の表面に選択的に膜を形成することは、原料ガスとしてＴｉ（ＮＭｅ２）４を用い、反応ガスとしてＨ２Ｏを用いて、ＴｉＯｘ膜を形成する、請求項２２に記載の選択成膜方法。
  26. 　前記第１の表面に選択的に膜を形成することは、原料ガスとしてＨｆ（ＮＭｅ２）４を用い、反応ガスとしてＨ２Ｏを用いて、ＨｆＯｘ膜を形成する、請求項２２に記載の選択成膜方法。
  27. 　前記第１の表面に選択的に膜を形成することは、原料ガスとしてＳｉＨ（ＮＭｅ２）４を用い、反応ガスとしてＨ２Ｏを用いて、ＳｉＯｘ膜を形成する、請求項２２に記載の選択成膜方法。
  28. 　前記第１の表面に選択的に膜を形成することは、原料ガスを供給し、熱分解させることにより行われる、請求項１から請求項１８のいずれか一項に記載の選択成膜方法。
  29. 　前記第１の表面に選択的に膜を形成することは、ＣＶＤにより行われる、請求項２８に記載の選択成膜方法。
  30. 　前記第１の表面に選択的に膜を形成することは、原料ガスとしてＣｏ２（ＣＯ）８を用い、熱分解させることによりＣｏ膜を形成する、請求項２９に記載の選択成膜方法。
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