WO2021217738A1 - 一种显示面板及其制备方法、显示装置 - Google Patents

一种显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2021217738A1
WO2021217738A1 PCT/CN2020/090564 CN2020090564W WO2021217738A1 WO 2021217738 A1 WO2021217738 A1 WO 2021217738A1 CN 2020090564 W CN2020090564 W CN 2020090564W WO 2021217738 A1 WO2021217738 A1 WO 2021217738A1
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Prior art keywords
layer
emitting device
display panel
array substrate
scattering
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PCT/CN2020/090564
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English (en)
French (fr)
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吴令恋
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Tcl华星光电技术有限公司
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Priority to US16/960,555 priority Critical patent/US11991899B2/en
Publication of WO2021217738A1 publication Critical patent/WO2021217738A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means

Definitions

  • This application relates to the technical field of display panels, and in particular to a display panel, a manufacturing method thereof, and a display device.
  • OLED Organic Light-Emitting Diode
  • the current TFE structure is an organic/inorganic multilayer stack structure, in which the inorganic layer realizes the function of blocking water and oxygen, and the organic layer realizes the function of planarization.
  • FIG. 1 shows a schematic diagram of the structure of a display panel 100 in the prior art.
  • the display panel 100 includes an array substrate 110, an OLED light emitting device 120 provided on the array substrate 110, and an OLED light emitting device 120 provided on the OLED light emitting device 120.
  • the thin film encapsulation layer 130 includes a first inorganic layer 131, a first organic layer 132 disposed on the first inorganic layer 130, and a second inorganic layer 133 disposed on the first inorganic layer 132.
  • the nature of the OLED light-emitting device 120 material itself will produce total reflection in the device, only a part of the light will pass through the thin film encapsulation layer 130, resulting in a low light-emitting rate of the OLED light-emitting device, and the light-emitting rate of the OLED light-emitting device will directly affect the overall display panel performance.
  • An object of the present invention is to provide a display panel, which can solve the problem of low light output of OLED light-emitting devices in the prior art.
  • the present invention provides a display panel, including an array substrate; an OLED light emitting device arranged on one side of the array substrate; a scattering layer arranged on a side of the OLED light emitting device away from the array substrate, and Encapsulating the OLED light-emitting device; wherein, the scattering layer has a number of micropores.
  • a scattering layer is provided on the OLED light-emitting device, and the scattering layer has a number of micro-holes, so that when the OLED light-emitting device emits light, the light is scattered around through the micro-holes in the scattering layer, thereby increasing the light extraction rate of the OLED light-emitting device.
  • the overall performance of the display panel is provided on the OLED light-emitting device, and the scattering layer has a number of micro-holes, so that when the OLED light-emitting device emits light, the light is scattered around through the micro-holes in the scattering layer, thereby increasing the light extraction rate of the OLED light-emitting device.
  • the OLED light emitting device includes an anode layer, which is provided on the array substrate; a hole transport layer, which is provided on the anode layer; and a light emitting layer, which is provided on the hole transport layer.
  • the electron transport layer is provided on the light-emitting layer; the cathode layer is provided on the electron transport layer.
  • the display panel further includes a thin-film encapsulation layer, the thin-film encapsulation layer is provided on a side of the OLED light-emitting device away from the array substrate, and the thin-film encapsulation layer includes a first An inorganic layer; a first organic layer is provided on the first inorganic layer; a second inorganic layer is provided on the first organic layer; wherein the scattering layer is provided on the cathode layer and the first inorganic layer Between the layers, or/and the scattering layer is provided between the first inorganic layer and the first organic layer, or/and the scattering layer is provided on the second inorganic layer.
  • the material of the scattering layer is silicon nitride or silicon oxide, and the thickness of the scattering layer is 0.1-2um.
  • the diameter of the micropores ranges from 10 nm to 50 nm.
  • the present invention also provides a manufacturing method for manufacturing the display panel related to the present invention.
  • the manufacturing method includes the following steps: providing an array substrate; On one side; preparing a scattering layer on the side of the OLED light-emitting device away from the array substrate; wherein the scattering layer has a number of micropores.
  • a scattering layer is arranged on the OLED light-emitting device, and the scattering layer has several micro holes, so that when the OLED light-emitting device emits light, the light is scattered around through the micro holes in the scattering layer, thereby increasing the light output rate of the OLED light-emitting device and improving the overall display panel performance.
  • the step of preparing the scattering layer includes preparing a silicide film on the side of the OLED light-emitting device away from the array substrate; implanting ions into the silicide film; The silicide film is annealed, and the ions precipitate micropores in the silicide film to form a scattering layer.
  • the silicide film is prepared by chemical deposition or inkjet printing.
  • the silicide film includes a silicon nitride film or a silicon oxide film, and the ions are helium ions.
  • the material of the scattering layer is not limited to the silicide film, as long as it is a material that can ensure that micropores can be formed in the film layer after ion implantation and annealing processes.
  • the present invention also provides a display device including the display panel related to the present invention.
  • the present invention provides a display panel, a preparation method thereof, and a display device.
  • a scattering layer is arranged on an OLED light-emitting device, and the scattering layer has several micropores, so that the OLED light-emitting device emits light. At this time, the light is scattered around through the microholes in the scattering layer, thereby increasing the light output rate of the OLED light-emitting device and improving the overall performance of the display panel.
  • FIG. 1 is a schematic diagram of the structure of a display panel provided in the prior art
  • FIG. 2 is a schematic structural diagram of a display panel provided by an embodiment of the present invention.
  • FIG. 3 is a flowchart of a manufacturing method of a display panel provided by an embodiment of the present invention.
  • OLED light-emitting device-120 thin-film encapsulation layer-130;
  • the second inorganic layer -133 The second inorganic layer -133.
  • the second inorganic layer -133 The second inorganic layer -133.
  • the "on" or “under” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
  • the "above”, “above” and “above” of the first feature on the second feature include the first feature directly above and obliquely above the second feature, or it simply means that the first feature is higher in level than the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • FIG. 2 is a schematic structural diagram of the display panel 100 provided by an embodiment of the present invention.
  • the display panel 100 includes an array substrate 110, an OLED light emitting device 120, and a scattering layer 210. ⁇ encapsulation layer 130.
  • the OLED light emitting device 120 is arranged on one side of the array substrate 110.
  • the OLED light emitting device 120 has an anode layer, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode layer.
  • the anode layer is arranged on the array substrate 110; the hole transport layer It is arranged on the anode layer; the light emitting layer is arranged on the hole transport layer; the electron transport layer is arranged on the light emitting layer; the cathode layer is arranged on the electron transport layer. Since the design point of the present application lies in the scattering layer 210, the OLED light-emitting device 120 will not be described in detail here.
  • the scattering layer 210 is disposed on a side of the OLED light emitting device 120 away from the array substrate 110 and covers the OLED light emitting device 120; wherein, the scattering layer 210 has a number of micro holes 211.
  • the material of the scattering layer 210 is silicon nitride. In other embodiments, the material of the scattering layer 210 can also be silicon oxide, which is not limited here.
  • the thickness of the scattering layer 210 is in the range of 0.1-2um, and the diameter of the microhole 211 is in the range of 10nm-50nm.
  • a scattering layer 210 is provided on the OLED light-emitting device 120.
  • the scattering layer 210 has a number of micro holes 211, so that when the OLED light-emitting device 120 emits light, the light is scattered around through the micro holes 211 in the scattering layer 210, thereby improving the performance of the OLED light-emitting device 120.
  • the light extraction rate improves the overall performance of the display panel 100.
  • the thin film encapsulation layer 130 is provided on the side of the OLED light emitting device 120 away from the array substrate 110.
  • the thin film encapsulation layer 130 includes a first inorganic layer 131, a first organic layer 132, and a second inorganic layer 133.
  • the first organic layer 132 It is arranged on the first inorganic layer 131; the second inorganic layer 133 is arranged on the first organic layer 132.
  • the scattering layer 210 is provided between the cathode layer and the first inorganic layer 131. In other embodiments, the scattering layer 210 may also be provided between the first inorganic layer 131 and the first organic layer 132, and The OLED light-emitting device 120 and the first inorganic layer 131 are covered; or the scattering layer 210 is provided between the first organic layer 132 and the second inorganic layer 133, and covers the OLED light-emitting device 120, the first inorganic layer 131 and the first organic layer.
  • the layer 132; or the scattering layer 210 is provided on the second inorganic layer 133, and includes an OLED light emitting device 120 and a thin film encapsulation layer 130.
  • the embodiment of the present invention also provides a preparation method for preparing the display panel 100 related to the present invention. Please refer to FIG. 3, which shows a flow chart of the preparation method of the display panel 100 provided by the embodiment of the present invention. Including steps 1-step 3.
  • Step 1 Provide an array substrate 110.
  • Step 2 Prepare the OLED light-emitting device 120 on one side of the array substrate 110.
  • Step 3 Prepare the scattering layer 210 on the side of the OLED light-emitting device 120 away from the array substrate 110; wherein, the scattering layer 210 has a number of micro holes 211.
  • Step 3 of preparing the scattering layer 210 specifically includes step 31 to step 33:
  • Step 31 preparing a silicide film on the side of the OLED light-emitting device 120 away from the array substrate 110; wherein the preparation of the silicide film is by chemical deposition or inkjet printing.
  • Step 32 implanting ions into the silicide film.
  • Step 33 Anneal the silicide film after the ion implantation, and the ions precipitate out the micropores 211 in the silicide film to form the scattering layer 210.
  • the silicide film is a silicon nitride film, and the ions are helium ions.
  • the material of the scattering layer 210 may also be a silicon oxide film, and the material of the scattering layer 210 may not be limited to a silicide film, as long as it can ensure that micropores can be formed in the film after ion implantation and annealing processes. 211 materials are sufficient.
  • step 4 preparing the thin film encapsulation layer 130 on the side of the OLED light emitting device 120 away from the array substrate 110, specifically, step 4 includes step 41 to step 43.
  • Step 41 preparing a first inorganic layer 131 on the scattering layer
  • Step 42 preparing a first organic layer 132 on the first inorganic layer 131;
  • Step 43 preparing a second inorganic layer 133 and setting it on the first organic layer 132.
  • the scattering layer 210 is provided between the cathode layer and the first inorganic layer 131. In other embodiments, the scattering layer 210 may also be provided between the first inorganic layer 131 and the first organic layer 132, or The scattering layer 210 is provided on the second inorganic layer 133.
  • step 42 can also be: preparing a scattering layer on the first inorganic layer 131, and preparing a first organic layer 132 on the first inorganic layer 131;
  • step 43 can also be: preparing a scattering layer on the first organic layer 132, and preparing The second inorganic layer 133 is disposed on the first organic layer 132; or the method further includes step 44: preparing a scattering layer on the second inorganic layer 133.
  • a scattering layer 210 is provided on the OLED light emitting device 120 or between the film layers in the thin film encapsulation layer 130.
  • the scattering layer 210 has a number of micro holes 211, so that when the OLED light emitting device 120 emits light, light passes through the micro holes 211 in the scattering layer 210. Scattering to the surroundings, thereby increasing the light output rate of the OLED light emitting device 120, and improving the overall performance of the display panel 100.
  • the present invention also provides a display device, including the display panel 100 related to the present invention.
  • the present invention provides a display panel, a preparation method thereof, and a display device.
  • a scattering layer is provided on the OLED light-emitting device, and the scattering layer has several micropores, so that when the OLED light-emitting device emits light, the light passes through the scattering layer.
  • the micro holes in the middle scatter to the surroundings, thereby increasing the light output rate of the OLED light-emitting device and improving the overall performance of the display panel.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板（100）及其制备方法、显示装置，显示面板（100）包括阵列基板（110）；OLED发光器件（120），设于所述阵列基板（110）一侧；散射层（210），设于所述OLED发光器件（120）远离所述阵列基板（110）的一侧；其中，所述散射层（210）中具有若干微孔（211）。

Description

一种显示面板及其制备方法、显示装置 技术领域
本申请涉及显示面板技术领域，尤其涉及一种显示面板及其制备方法、显示装置。
 背景技术
目前现有的有机发光二极管（OrganicLight-Emitting Diode,OLED)结构具有自发光、广视角、高对比、低耗电、极高反应 速率等优点，已经成为当前的主流显示技术之一。
由于有机发光元器件对水氧具有高度敏感性，因此为了保护有机发光元器件，需要对OLED进行封装。目前常用的封装方法有：传统玻璃盖板封装、薄膜封装(Thin Film Encapsulation,TFE）等，以便提高封装结构的依赖性。目前的TFE的结构为有机/无机多层堆叠结构，其中无机层实现阻隔水氧的作用，而有机层实现平坦化的作用。
请参阅图1，图1所示为现有技术中的显示面板100的结构示意图，显示面板100包括阵列基板110、设于阵列基板110上的OLED发光器件120、设于OLED发光器件120上的薄膜封装层130，薄膜封装层130包括第一无机层131、设于第一无机层130上的第一有机层132、设于第一无机层132上的第二无机层133。因为OLED发光器件120材料本身性质会在器件内产生全反射，因此只有一部分光会通过薄膜封装层130，导致OLED发光器件出光率不高，而OLED发光器件的出光率会直接影响显示面板的整体性能。
因此，确有必要来开发一种新型的显示面板，以克服现有技术的缺陷。
 技术问题
本发明的一个目的是提供一种显示面板，其能够解决现有技术中OLED发光器件出光率不高的问题。
 技术解决方案
为实现上述目的，本发明提供一种显示面板，包括阵列基板；OLED发光器件，设于所述阵列基板一侧；散射层，设于所述OLED发光器件远离所述阵列基板的一侧，并包覆所述OLED发光器件；其中，所述散射层中具有若干微孔。
其中，在OLED发光器件上设置散射层，所述散射层中具有若干微孔，使得OLED发光器件发光时，光通过散射层中的微孔向四周散射，从而提高OLED发光器件的出光率，提升显示面板的整体性能。
进一步的，在其他实施方式中，其中所述OLED发光器件包括阳极层，设于所述阵列基板上；空穴传输层，设于所述阳极层上；发光层，设于所述空穴传输层上；电子传输层，设于所述发光层上；阴极层，设于所述电子传输层上。
进一步的，在其他实施方式中，其中所述显示面板还包括薄膜封装层，所述薄膜封装层设于所述OLED发光器件远离所述阵列基板的一侧上，所述薄膜封装层包括第一无机层；第一有机层，设于所述第一无机层上；第二无机层，设于所述第一有机层上；其中所述散射层设于所述阴极层和所述第一无机层之间，或/和所述散射层设于所述第一无机层和所述第一有机层之间，或/和所述散射层设于所述第二无机层上。
进一步的，在其他实施方式中，其中所述散射层的材料采用氮化硅或氧化硅，所述散射层的厚度为0.1-2um。
进一步的，在其他实施方式中，其中所述微孔的直径范围为10nm-50nm。
为实现上述目的，本发明还提供一种制备方法，用以制备本发明涉及的所述显示面板，所述制备方法包括以下步骤：提供一阵列基板；制备OLED发光器件，设于所述阵列基板一侧上；制备散射层于所述OLED发光器件远离所述阵列基板的一侧上；其中，所述散射层中具有若干微孔。
在OLED发光器件上设置散射层，散射层中具有若干微孔，使得OLED发光器件发光时，光通过散射层中的微孔向四周散射，从而提高OLED发光器件的出光率，提升显示面板的整体性能。
进一步的，在其他实施方式中，其中制备所述散射层的步骤包括制备硅化物薄膜于所述OLED发光器件远离所述阵列基板的一侧；对所述硅化物薄膜注入离子；对注入离子后的所述硅化物薄膜进行退火，所述离子在所述硅化物薄膜中析出微孔，形成散射层。
进一步的，在其他实施方式中，其中制备所述硅化物薄膜是通过化学沉积或喷墨打印的方式。
进一步的，在其他实施方式中，其中所述硅化物薄膜包括氮化硅薄膜或氧化硅薄膜，所述离子为氦离子。在其他实施方式中，所述散射层的材料不限于所述硅化物薄膜，只要是能保证通过离子注入、退火工艺后能在膜层内形成微孔的材料即可。
为实现上述目的，本发明还提供一种显示装置，包括本发明涉及的所述显示面板。
 有益效果
相对于现有技术，本发明的有益效果在于：本发明提供一种显示面板及其制备方法、显示装置，在OLED发光器件上设置散射层，散射层中具有若干微孔，使得OLED发光器件发光时，光通过散射层中的微孔向四周散射，从而提高OLED发光器件的出光率，提升显示面板的整体性能。
 附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为现有技术中提供的显示面板的结构示意图；
图2为本发明实施例提供的显示面板的结构示意图；
图3为本发明实施例提供的显示面板的制备方法的流程图。
背景技术中的附图说明：
显示面板-100；阵列基板-110；
OLED发光器件-120；薄膜封装层-130；
第一无机层-131；第一有机层-132；
第二无机层-133。
具体实施方式中的附图说明：
显示面板-100；阵列基板-110；
OLED发光器件-120；
散射层-210；微孔-211；
薄膜封装层-130；
第一无机层-131；第一有机层-132；
第二无机层-133。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本发明实施例提供一种显示面板100，请参阅图2，图2所示为本发明实施例提供的显示面板100的结构示意图，显示面板100包括阵列基板110、OLED发光器件120、散射层210和薄膜封装层130。
OLED发光器件120设于阵列基板110一侧，具体地，OLED发光器件120阳极层、空穴传输层、发光层、电子传输层和阴极层，阳极层设于阵列基板110上；空穴传输层设于阳极层上；发光层设于空穴传输层上；电子传输层设于发光层上；阴极层设于电子传输层上。由于本申请的设计要点在于散射层210，在此便不再对OLED发光器件120做具体阐述。
散射层210设于OLED发光器件120远离阵列基板110的一侧，并包覆所述OLED发光器件120；其中，散射层210中具有若干微孔211。
在本实施例中，散射层210的材料采用氮化硅，在其他实施方式中，散射层210的材料也可以采用氧化硅，在此不做限定。
其中，散射层210的厚度范围为0.1-2um，微孔211的直径范围为10nm-50nm。
在OLED发光器件120上设置散射层210，散射层210中具有若干微孔211，使得OLED发光器件120发光时，光通过散射层210中的微孔211向四周散射，从而提高OLED发光器件120的出光率，提升显示面板100的整体性能。
薄膜封装层130设于OLED发光器件120远离阵列基板110的一侧上，具体地，薄膜封装层130包括第一无机层131、第一有机层132和第二无机层133，第一有机层132设于第一无机层131上；第二无机层133设于第一有机层132上。
在本实施例中，散射层210设于阴极层和第一无机层131之间，在其他实施例中，散射层210也可以设于第一无机层131和第一有机层132之间，并包覆OLED发光器件120和第一无机层131；或散射层210设于第一有机层132和第二无机层133之间，并包覆OLED发光器件120和第一无机层131以及第一有机层132；或散射层210设于第二无机层133上，并包括OLED发光器件120和薄膜封装层130。
本发明实施例还提供一种制备方法，用以制备本发明涉及的显示面板100，请参阅图3，图3所示为本发明实施例提供的显示面板100的制备方法的流程图，制备方法包括步骤1-步骤3。
步骤1：提供一阵列基板110。
步骤2：制备OLED发光器件120于阵列基板110一侧上。
步骤3：制备散射层210于OLED发光器件120远离阵列基板110的一侧上；其中，散射层210中具有若干微孔211。
制备散射层210的步骤3具体包括步骤31-步骤33：
步骤31：制备硅化物薄膜于OLED发光器件120远离阵列基板110的一侧；其中制备硅化物薄膜是通过化学沉积或喷墨打印的方式。
步骤32：对硅化物薄膜注入离子。
步骤33：对注入离子后的硅化物薄膜进行退火，离子在硅化物薄膜中析出微孔211，形成散射层210。
在本实施例中，硅化物薄膜为氮化硅薄膜，离子为氦离子。在其他实施方式中，散射层210的材料也可以采用氧化硅薄膜，散射层210的材料也可以不限于硅化物薄膜，只要是能保证通过离子注入、退火工艺后能在膜层内形成微孔211的材料即可。
在步骤3后还要进行步骤4：制备薄膜封装层130于OLED发光器件120远离阵列基板110的一侧上，具体地，步骤4包括步骤41-步骤43。
步骤41：制备第一无机层131于散射层上；
步骤42：制备第一有机层132于第一无机层131上；
步骤43：制备第二无机层133设于第一有机层132上。
在本实施例中，散射层210设于阴极层和第一无机层131之间，在其他实施例中，散射层210也可以设于第一无机层131和第一有机层132之间，或散射层210设于第二无机层133上。因此步骤42也可以为：制备散射层于第一无机层131上，制备第一有机层132于第一无机层131上；步骤43也可以为：制备散射层于第一有机层132上，制备第二无机层133设于第一有机层132上；或者还包括步骤44：制备散射层于第二无机层133上。
在OLED发光器件120上或薄膜封装层130中各膜层之间设置散射层210，散射层210中具有若干微孔211，使得OLED发光器件120发光时，光通过散射层210中的微孔211向四周散射，从而提高OLED发光器件120的出光率，提升显示面板100的整体性能。
为实现上述目的，本发明还提供一种显示装置，包括本发明涉及的显示面板100。
本发明的有益效果在于：本发明提供一种显示面板及其制备方法、显示装置，在OLED发光器件上设置散射层，散射层中具有若干微孔，使得OLED发光器件发光时，光通过散射层中的微孔向四周散射，从而提高OLED发光器件的出光率，提升显示面板的整体性能。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种显示面板及其制备方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (14)

  1. 一种显示面板，其中，包括：
    阵列基板；
    OLED发光器件，设于所述阵列基板一侧；
    散射层，设于所述OLED发光器件远离所述阵列基板的一侧，并包覆所述OLED发光器件；
    其中，所述散射层中具有若干微孔。
  2. 如权利要求1所述的显示面板，其中，所述OLED发光器件包括
    阳极层，设于所述阵列基板上；
    空穴传输层，设于所述阳极层上；
    发光层，设于所述空穴传输层上；
    电子传输层，设于所述发光层上；
    阴极层，设于所述电子传输层上。
  3. 如权利要求2所述的显示面板，其中，所述显示面板还包括薄膜封装层，所述薄膜封装层设于所述OLED发光器件远离所述阵列基板的一侧上，所述薄膜封装层包括
    第一无机层；
    第一有机层，设于所述第一无机层上；
    第二无机层，设于所述第一有机层上；
    其中所述散射层设于所述阴极层和所述第一无机层之间，或/和
    所述散射层设于所述第一无机层和所述第一有机层之间，或/和
    所述散射层设于所述第二无机层上。
  4. 如权利要求1所述的显示面板，其中，所述散射层的材料采用氮化硅或氧化硅，所述散射层的厚度为0.1-2um。
  5. 如权利要求1所述的显示面板，其中，所述微孔的直径范围为10nm-50nm。
  6. 一种制备方法，用以制备如权利要求1所述的显示面板，其中，制备方法包括以下步骤：
    提供一阵列基板；
    制备OLED发光器件，设于所述阵列基板一侧上；
    制备散射层于所述OLED发光器件远离所述阵列基板的一侧上；其中，所述散射层中具有若干微孔。
  7. 如权利要求6所述的制备方法，其中，制备所述散射层的步骤包括
    制备硅化物薄膜于所述OLED发光器件远离所述阵列基板的一侧；
    对所述硅化物薄膜注入离子；
    对注入离子后的所述硅化物薄膜进行退火，所述离子在所述硅化物薄膜中析出微孔，形成散射层。
  8. 如权利要求7所述的制备方法，其中，制备所述硅化物薄膜是通过化学沉积或喷墨打印的方式。
  9. 如权利要求7所述的制备方法，其中，所述硅化物薄膜包括氮化硅薄膜或氧化硅薄膜，所述离子为氦离子。
  10. 一种显示装置，其中，包括如权利要求1所述的显示面板。
  11. 如权利要求10所述的显示装置，其中，所述OLED发光器件包括
    阳极层，设于所述阵列基板上；
    空穴传输层，设于所述阳极层上；
    发光层，设于所述空穴传输层上；
    电子传输层，设于所述发光层上；
    阴极层，设于所述电子传输层上。
  12. 如权利要求11所述的显示装置，其中，所述显示面板还包括薄膜封装层，所述薄膜封装层设于所述OLED发光器件远离所述阵列基板的一侧上，所述薄膜封装层包括
    第一无机层；
    第一有机层，设于所述第一无机层上；
    第二无机层，设于所述第一有机层上；
    其中所述散射层设于所述阴极层和所述第一无机层之间，或/和
    所述散射层设于所述第一无机层和所述第一有机层之间，或/和
    所述散射层设于所述第二无机层上。
  13. 如权利要求10所述的显示装置，其中，所述散射层的材料采用氮化硅或氧化硅，所述散射层的厚度为0.1-2um。
  14. 如权利要求10所述的显示装置，其中，所述微孔的直径范围为10nm-50nm。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1645977A (zh) * 2004-01-19 2005-07-27 株式会社日立显示器 有机电致发光显示装置及其制造方法
US20140264316A1 (en) * 2011-11-11 2014-09-18 Osram Opto Semiconductors Gmbh Organic Light-Emitting Device
US20150144900A1 (en) * 2012-06-14 2015-05-28 Saint-Gobain Glass France Layered structure for oled device, method for manufacturing the same, and oled device having the same
CN105895826A (zh) * 2016-06-17 2016-08-24 深圳市华星光电技术有限公司 一种自发光器件、制备方法及显示装置
CN106328819A (zh) * 2016-08-31 2017-01-11 深圳市华星光电技术有限公司 一种有机发光显示装置及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014514716A (ja) * 2011-04-12 2014-06-19 アーケマ・インコーポレイテッド Ｏｌｅｄ素子のための内部光学的取り出し層
KR101608273B1 (ko) * 2014-09-05 2016-04-01 코닝정밀소재 주식회사 유기발광소자용 광추출 기판 제조방법, 유기발광소자용 광추출 기판 및 이를 포함하는 유기발광소자
KR102604023B1 (ko) * 2016-03-10 2023-11-20 삼성디스플레이 주식회사 광산란 필름 및 이를 포함하는 표시장치
KR20190007942A (ko) * 2017-07-14 2019-01-23 코닝 인코포레이티드 다층 구조물 패터닝 방법
CN107464888A (zh) * 2017-08-01 2017-12-12 京东方科技集团股份有限公司 一种封装结构及其制备方法和显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1645977A (zh) * 2004-01-19 2005-07-27 株式会社日立显示器 有机电致发光显示装置及其制造方法
US20140264316A1 (en) * 2011-11-11 2014-09-18 Osram Opto Semiconductors Gmbh Organic Light-Emitting Device
US20150144900A1 (en) * 2012-06-14 2015-05-28 Saint-Gobain Glass France Layered structure for oled device, method for manufacturing the same, and oled device having the same
CN105895826A (zh) * 2016-06-17 2016-08-24 深圳市华星光电技术有限公司 一种自发光器件、制备方法及显示装置
CN106328819A (zh) * 2016-08-31 2017-01-11 深圳市华星光电技术有限公司 一种有机发光显示装置及其制作方法

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