WO2021215041A1 - Module amplificateur de puissance et dispositif de communication - Google Patents

Module amplificateur de puissance et dispositif de communication Download PDF

Info

Publication number
WO2021215041A1
WO2021215041A1 PCT/JP2020/045528 JP2020045528W WO2021215041A1 WO 2021215041 A1 WO2021215041 A1 WO 2021215041A1 JP 2020045528 W JP2020045528 W JP 2020045528W WO 2021215041 A1 WO2021215041 A1 WO 2021215041A1
Authority
WO
WIPO (PCT)
Prior art keywords
power amplifier
inductor
circuit
amplifier module
switch
Prior art date
Application number
PCT/JP2020/045528
Other languages
English (en)
Japanese (ja)
Inventor
崇央 豊村
佑二 竹松
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2021215041A1 publication Critical patent/WO2021215041A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/03—Constructional details, e.g. casings, housings
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits

Definitions

  • the present invention generally relates to a power amplifier module and a communication device, and more particularly to a power amplifier module and a communication device including a circuit for performing impedance matching.
  • Patent Document 1 a high frequency module including a circuit for impedance matching is known (see Patent Document 1).
  • Patent Document 1 an output terminal of a power amplifier (power amplifier) and a transmission output matching circuit (output matching circuit) that performs impedance matching are connected. Further, the transmission output matching circuit is connected to the transmission filter. As a result, the transmission output matching circuit performs impedance matching between the power amplifier and the transmission filter.
  • a module having at least an output matching circuit and a power amplifier.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a power amplifier module and a communication device that can be miniaturized.
  • the power amplifier module includes a mounting board, a power amplifier, and an attenuation circuit for attenuating the harmonics of the signal output from the power amplifier.
  • the attenuation circuit includes a plurality of inductors that are inner-layered on the mounting board and connected to the output terminals of the power amplifier. The plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction of the mounting substrate.
  • the communication device includes the power amplifier module and a signal processing circuit for processing a high frequency signal passing through the power amplifier module.
  • miniaturization can be achieved.
  • FIG. 1 is a circuit diagram illustrating a configuration of a high frequency module and a communication device including a power amplifier module according to an embodiment.
  • FIG. 2 is a circuit diagram illustrating the configuration of the power amplifier module of the same.
  • FIG. 3 is a perspective view of the power amplifier module of the above.
  • FIG. 4 is a cross-sectional view of X1-X1 of FIG. 3 in which a part of the power amplifier module of the same is seen through.
  • FIG. 5 is a perspective view of a part of the power amplifier module of the same as above.
  • FIG. 6 is a cross-sectional view showing a part of the power amplifier module according to the first modification.
  • FIGS. 1 to 6 referred to in the following embodiments and the like are schematic views, and the ratio of the size and the thickness of each component in the figure does not necessarily reflect the actual dimensional ratio. Not necessarily.
  • the high frequency module 1 includes a power amplifier module 100, and is used, for example, in a communication device 500 compatible with multimode / multiband.
  • the communication device 500 is, for example, a mobile phone (for example, a smartphone), but is not limited to this, and may be, for example, a wearable terminal (for example, a smart watch) or the like.
  • the high frequency module 1 is a module capable of supporting, for example, a 4G (4th generation mobile communication) standard, a 5G (5th generation mobile communication) standard, and the like.
  • the 4G standard is, for example, a 3GPP LTE (LTE: Long Term Evolution) standard.
  • the 5G standard is, for example, 5G NR (New Radio).
  • the high frequency module 1 is a module capable of supporting carrier aggregation and dual connectivity.
  • the high frequency module 1 is configured to, for example, amplify the transmission signal (high frequency signal) input from the signal processing circuit 3 and output it to the antenna 4. Further, the high frequency module 1 is configured to amplify the received signal (high frequency signal) input from the antenna 4 and output it to the signal processing circuit 3.
  • the signal processing circuit 3 is not a component of the high frequency module 1, but a component of the communication device 500 including the high frequency module 1.
  • the high frequency module 1 according to the embodiment is controlled by, for example, a signal processing circuit 3 included in the communication device 500.
  • the communication device 500 includes a high frequency module 1 and a signal processing circuit 3.
  • the communication device 500 further includes an antenna 4.
  • the signal processing circuit 3 processes a signal received via the antenna 4 (received signal) and a signal transmitted via the antenna 4 (transmitted signal).
  • the high-frequency module 1 includes a mounting board 200, an antenna terminal T1, an antenna switch 10, a matching circuit 20, a filter group 30, and a first switch 40.
  • a second switch 50, an output matching circuit 60, an input matching circuit 70, a power amplifier 80, and a low noise amplifier 90 are provided.
  • the power amplifier module 100 includes a first switch 40, an output matching circuit 60, and a power amplifier 80.
  • the high frequency module 1 includes a mounting board 200, an antenna terminal T1, an antenna switch 10, a matching circuit 20, a filter group 30, a power amplifier module 100, an input matching circuit 70, and a low noise amplifier 90. Be prepared.
  • the high frequency module 1 further includes a plurality of external connection terminals 210 (see FIG. 4).
  • the antenna terminal T1 is electrically connected to the antenna 4.
  • the antenna switch 10 is a switch capable of selecting a signal path of at least one communication band among the signal paths of a plurality of communication bands as a signal path connected to the antenna 4.
  • the antenna switch 10 has a common terminal 11 and a plurality of (four in the illustrated example) selection terminals 12 to 15.
  • the common terminal 11 is electrically connected to the antenna terminal T1.
  • the selection terminal 12 is electrically connected to the filter 31 included in the filter group 30.
  • the selection terminal 13 is electrically connected to the filter 32 included in the filter group 30.
  • the selection terminal 14 is electrically connected to the filter 33 included in the filter group 30.
  • the selection terminal 15 is electrically connected to the filter 34 included in the filter group 30.
  • the antenna switch 10 is a switch capable of selecting at least one of a plurality of selection terminals 12 to 15 as a connection destination of the common terminal 11. That is, the antenna switch 10 is a switch capable of selectively connecting the filter 31, the filter 32, the filter 33, the filter 34, and the antenna 4.
  • the antenna switch 10 is controlled by, for example, the signal processing circuit 3.
  • the antenna switch 10 electrically connects at least one of the selection terminal 12, the selection terminal 13, and the selection terminal 14 and the common terminal 11 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the matching circuit 20 has, for example, a plurality of (four in the illustrated example) chip inductors 21 to 24 (see FIG. 1).
  • Each of the chip inductors 21 to 24 is a circuit element that performs impedance matching between the antenna switch 10 and the filter group 30.
  • One end of each of the chip inductors 21 to 24 is connected to a path connecting the antenna switch 10 and the filters 31 to 34 of the filter group 30, and the other end is connected to a reference terminal (ground).
  • the chip inductors 21 to 24 may be connected in series to the path instead of being connected between the path and the ground.
  • the matching circuit 20 is not limited to the chip inductors 21 to 24, and may be a capacitor or a circuit in which an inductor and a capacitor are combined.
  • the filter group 30 has a plurality of filters 31 to 34 (see FIG. 1).
  • the plurality of filters 31 to 34 are, for example, elastic wave filters, and each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators.
  • the surface acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves.
  • Filters 31-34 are duplexers.
  • the filter 31 includes a filter 31a and a filter 31b.
  • the filter 32 includes a filter 32a and a filter 32b.
  • the filter 33 includes a filter 33a and a filter 33b.
  • the filter 34 includes a filter 34a and a filter 34b.
  • the filters 31a, 32a, 33a, 34a are transmission filters for passing a transmission signal.
  • the filters 31b, 32b, 33b, 34b are reception filters for passing a reception signal.
  • the filter 31a passes the transmission signal of the Band 71 in the 4G standard, for example.
  • the filter 32a passes, for example, the transmission signal of Band 13 in the 4G standard.
  • the filter 33a passes, for example, the transmission signal of Band 20 in the 4G standard.
  • the filter 34a passes, for example, a Band 8 transmission signal in the 4G standard.
  • the filter 31b passes the received signal of the Band 71 in the 4G standard, for example.
  • the filter 32b passes the received signal of Band 13 in the 4G standard, for example.
  • the filter 33b passes the received signal of the Band 20 in the 4G standard, for example.
  • the filter 34b passes the received signal of Band 8 in the 4G standard, for example.
  • Each of the filters 31 to 34 is connected one-to-one to a plurality of selection terminals of the antenna switch 10.
  • Each of the filters 31 to 34 is electrically connected one-to-one to a plurality of (three in the illustrated example) selection terminals 43a to 43d of the band changeover switch 41 of the first switch 40.
  • the filter 31a is electrically connected to the selection terminal 43a
  • the filter 32a is electrically connected to the selection terminal 43b
  • the filter 33a is electrically connected to the selection terminal 43c
  • the filter 34a is electrically connected to the selection terminal 43d.
  • Each of the filters 31 to 34 is connected one-to-one to a plurality of (four in the illustrated example) selection terminals 52a to 52d of the second switch 50.
  • the filter 31b is electrically connected to the selection terminal 52a
  • the filter 32b is electrically connected to the selection terminal 52b
  • the filter 33b is electrically connected to the selection terminal 52c
  • the filter 34b is electrically connected to the selection terminal 52d.
  • the second switch 50 has a common terminal 51 and a plurality of (four in the illustrated example) selection terminals 52a to 52d.
  • the second switch 50 is a switch that switches the connection state between the common terminal 51 and the selection terminals 52a to 52d.
  • the common terminal 51 is electrically connected to the low noise amplifier 90. Specifically, the common terminal 51 is connected to the low noise amplifier 90 via the input matching circuit 70.
  • the plurality of selection terminals 52a to 52d are connected one-to-one to the plurality of filters 31 to 34. In the present embodiment, the selection terminal 52a is connected to the filter 31b, the selection terminal 52b is connected to the filter 32b, the selection terminal 52c is connected to the filter 33b, and the selection terminal 52d is connected to the filter 34b.
  • the second switch 50 electrically connects any one of the selection terminals 52a to 52d and the common terminal 51 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the input matching circuit 70 is a circuit element that performs impedance matching between the second switch 50 and the low noise amplifier 90.
  • the low noise amplifier 90 amplifies the signal (received signal) received by the antenna 4.
  • the input terminal 91 of the low noise amplifier 90 is electrically connected to the input matching circuit 70.
  • the output terminal 92 of the low noise amplifier 90 is connected to the signal processing circuit 3.
  • the low noise amplifier 90 amplifies a signal (received signal) that has passed through any of the filters 31b to 34b and the input matching circuit 70.
  • the low noise amplifier 90 outputs the amplified received signal to the signal processing circuit 3.
  • the power amplifier module 100 includes a first switch 40, an output matching circuit 60, and a power amplifier 80 (see FIG. 1).
  • the first switch 40 is, for example, a switch IC (Integrated Circuit). As shown in FIG. 1, the first switch 40 includes a band changeover switch 41, a first changeover switch 45, and a second changeover switch 46.
  • the band changeover switch 41 is a switch for switching the band used for signal transmission. As shown in FIG. 1, the band changeover switch 41 has a common terminal 42 and a plurality of (four in the illustrated example) selection terminals 43a to 43d.
  • the common terminal 42 is electrically connected to the output matching circuit 60.
  • the selection terminal 43a is electrically connected to the filter 31a.
  • the selection terminal 43b is electrically connected to the filter 32a.
  • the selection terminal 43c is electrically connected to the filter 33a.
  • the selection terminal 43d is electrically connected to the filter 34a.
  • the band changeover switch 41 is a switch that can select at least one of a plurality of selection terminals 43a to 43d as a connection destination of the common terminal 42. That is, the band changeover switch 41 is a switch capable of selectively connecting the filter 31, the filter 32, the filter 33, the filter 34, and the output matching circuit 60.
  • the band changeover switch 41 is controlled by, for example, the signal processing circuit 3.
  • the band changeover switch 41 electrically connects at least one of the selection terminals 43a to 43d and the common terminal 42 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the first changeover switch 45 is provided between the second inductor 613 (see FIG. 2), which will be described later, and the ground.
  • the first changeover switch 45 includes a first terminal 451 and a second terminal 452.
  • the first terminal 451 is electrically connected to the second inductor 613.
  • the second terminal 452 is electrically connected to the ground.
  • the first changeover switch 45 is controlled by, for example, the signal processing circuit 3.
  • the first changeover switch 45 electrically connects or disconnects the first terminal 451 and the second terminal 452 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the second changeover switch 46 is provided between the third inductor 614 (see FIG. 2), which will be described later, and the ground.
  • the second changeover switch 46 includes a first terminal 461 and a second terminal 462.
  • the first terminal 461 is electrically connected to the third inductor 614.
  • the second terminal 462 is electrically connected to the ground.
  • the second changeover switch 46 is controlled by, for example, the signal processing circuit 3.
  • the second changeover switch 46 electrically connects or disconnects the first terminal 461 and the second terminal 462 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the output matching circuit 60 is a circuit element that matches the impedance between the power amplifier 80 and the external circuit (here, the band changeover switch 41) connected to the output side of the output matching circuit 60.
  • the detailed configuration of the output matching circuit 60 will be described later.
  • the power amplifier 80 amplifies the signal (transmitted signal) transmitted from the antenna 4.
  • the input terminal 82 of the power amplifier 80 is connected to the signal processing circuit 3.
  • the output terminal 81 of the power amplifier 80 is connected to the output matching circuit 60.
  • the power amplifier 80 amplifies the signal output from the signal processing circuit 3.
  • the power amplifier 80 outputs the amplified transmission signal to the band changeover switch 41 via the output matching circuit 60.
  • the output matching circuit 60 includes a first attenuation circuit 61, a second attenuation circuit 62, a third attenuation circuit 63, and a fourth attenuation circuit 64.
  • the first attenuation circuit 61 is a circuit that attenuates harmonics that are double waves of the transmission signal. As shown in FIG. 2, the first attenuation circuit 61 includes a capacitor 611, a first inductor 612, a second inductor 613, a third inductor 614, and a fourth inductor 615.
  • the fourth inductor 615 is inserted in series with the path R60 (see FIG. 3) connecting the power amplifier 80 and the first switch 40 in the power amplifier module. Specifically, the first end of the fourth inductor 615 is electrically connected to the output terminal 81 of the power amplifier 80. The second end of the fourth inductor 615 is electrically connected to the second attenuation circuit 62.
  • the capacitor 611 is provided between the second end of the fourth inductor 615 and the ground. Specifically, the first end of the capacitor 611 is electrically connected to the second end of the fourth inductor 615. The second end of the capacitor 611 is electrically connected to the first end of each of the first inductor 612, the second inductor 613, and the third inductor 614.
  • the first inductor 612 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the first inductor 612 is electrically connected to the second end of the capacitor 611. The second end of the first inductor 612 is electrically connected to ground.
  • the second inductor 613 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the second inductor 613 is electrically connected to the second end of the capacitor 611. The second end of the second inductor 613 is electrically connected to the first terminal 451 of the first changeover switch 45. The second inductor 613 is connected to the ground by connecting between the first terminal 451 of the first changeover switch 45 and the second terminal 452 of the first changeover switch 45.
  • the third inductor 614 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the third inductor 614 is electrically connected to the second end of the capacitor 611. The second end of the third inductor 614 is electrically connected to the first terminal 461 of the second changeover switch 46. The third inductor 614 is connected to the ground by being connected between the first terminal 461 of the second changeover switch 46 and the second terminal 462 of the second changeover switch 46.
  • the first inductor 612, the second inductor 613, and the third inductor 614 are electrically connected to the fourth inductor 615. That is, the first inductor 612, the second inductor 613, and the third inductor 614 are electrically connected to the output terminal 81 of the power amplifier 80.
  • the inductance value of the first inductor 612 is smaller than the inductance value of the second inductor 613 and the inductance value of the third inductor 614.
  • the inductance value of the second inductor 613 is larger than the inductance value of the first inductor 612 and the inductance value of the third inductor 614. That is, among the first inductor 612, the second inductor 613, and the third inductor 614, the inductance value of the first inductor 612 is the smallest, then the inductance value of the third inductor 614 is the smallest, and the inductance value of the second inductor 613 is. The largest. That is, the inequality "inductance value of the first inductor 612 ⁇ inductance value of the third inductor 614 ⁇ inductance value of the second inductor 613" is established.
  • the inductor connected to the ground is selected from the first inductor 612, the second inductor 613, and the third inductor 614. NS. That is, the inductance value of the inductor connected to the ground can be changed by switching the open state and the closed state of the first changeover switch 45 and the second changeover switch 46, respectively.
  • the structure related to the arrangement of the first inductor 612, the second inductor 613, and the third inductor 614 will be described later.
  • the second attenuation circuit 62 is a circuit that attenuates harmonics that are the third harmonic of the transmitted signal.
  • the second attenuation circuit 62 has an inductor 621 and a capacitor 622, as shown in FIG.
  • the inductor 621 is inserted in series with the path R60 (see FIG. 3). Specifically, the first end of the inductor 621 is electrically connected to the second end of the fourth inductor 615 of the first attenuation circuit 61. The second end of the inductor 621 is electrically connected to the third attenuation circuit 63.
  • the capacitor 622 is provided between the second end of the inductor 621 and the ground. Specifically, the first end of the capacitor 622 is electrically connected to the second end of the inductor 621. The second end of capacitor 622 is electrically connected to ground.
  • the third attenuation circuit 63 is a circuit that passes a signal on the higher frequency side than the predetermined frequency band (first frequency band). That is, the third attenuation circuit 63 is a circuit that attenuates a signal on the frequency side lower than the first frequency band. As shown in FIG. 2, the third attenuation circuit 63 includes a capacitor 631 and an inductor 632.
  • Capacitor 631 is inserted in series with path R60 (see FIG. 3). Specifically, the first end of the capacitor 631 is electrically connected to the second end of the inductor 621 of the second attenuation circuit 62. The second end of the capacitor 631 is electrically connected to the fourth attenuation circuit 64.
  • the inductor 632 is provided between the second end of the capacitor 631 and the ground. Specifically, the first end of the inductor 632 is electrically connected to the second end of the capacitor 631. The second end of the inductor 632 is electrically connected to ground.
  • the fourth attenuation circuit 64 is a circuit that passes a signal on the lower frequency side than the predetermined frequency band (second frequency band). That is, the fourth attenuation circuit 64 is a circuit that attenuates a signal on the higher frequency side than the second frequency band. As shown in FIG. 2, the fourth attenuation circuit 64 has an inductor 641 and a capacitor 642.
  • the inductor 641 is inserted in series with the path R60 (see FIG. 3). Specifically, the first end of the inductor 641 is electrically connected to the second end of the capacitor 631 of the third attenuation circuit 63. The second end of the inductor 641 is electrically connected to the band changeover switch 41 of the first switch 40.
  • the capacitor 642 is provided between the second end of the inductor 641 and the ground. Specifically, the first end of the capacitor 642 is electrically connected to the second end of the inductor 641. The second end of capacitor 642 is electrically connected to ground.
  • the mounting board 200 has a first main surface 201 and a second main surface 202 facing each other in the thickness direction D1.
  • a power amplifier 80, a capacitor 611, a capacitor 622, a capacitor 631, and the like are arranged on the first main surface 201.
  • the first switch 40 is arranged on the second main surface 202.
  • the mounting board 200 is, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics), an HTCC (High Temperature Co-fired Ceramics), or a resin board.
  • the mounting substrate 200 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers.
  • the plurality of dielectric layers and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting substrate 200.
  • the plurality of conductive layers are formed in a predetermined pattern determined for each layer.
  • Each of the plurality of conductive layers includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 200.
  • the material of each conductive layer is, for example, copper.
  • the plurality of conductive layers include a ground layer. In the power amplifier module 100, a plurality of ground terminals and a ground layer are electrically connected via a via conductor or the like included in the mounting substrate 200.
  • the mounting board 200 is not limited to the printed wiring board and the LTCC board, but may be a wiring structure.
  • the wiring structure is, for example, a multi-layer structure.
  • the multilayer structure includes at least one insulating layer and at least one conductive layer.
  • the insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer.
  • the conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer.
  • the conductive layer may include one or more rewiring sections.
  • the first surface is the first main surface 201 of the mounting board 200
  • the second surface is the second main surface 202 of the mounting board 200.
  • the wiring structure may be, for example, an interposer.
  • the interposer may be an interposer using a silicon substrate, or may be a substrate composed of multiple layers.
  • the power amplifier module 100 has a plurality of external connection terminals 210.
  • the plurality of external connection terminals 210 connect the power amplifier module 100 to the mother board on which the signal processing circuit 3 and the like are mounted.
  • the plurality of external connection terminals 210 are columnar (for example, columnar) electrodes arranged (provided) on the second main surface 202 of the mounting substrate 200.
  • the material of the plurality of external connection terminals 210 is, for example, a metal (for example, copper, copper alloy, etc.).
  • One of the plurality of external connection terminals 210 is electrically connected to the antenna terminal T1.
  • the power amplifier module 100 has a first resin layer 230 on the first main surface 201 of the mounting board 200, which covers the power amplifier 80, the capacitor 611, the capacitor 622, the capacitor 631, and the like mounted on the first main surface 201. Further prepare.
  • the power amplifier module 100 further includes a second resin layer 240 on the second main surface 202 of the mounting board 200, which covers the first switch 40 and the like mounted on the second main surface 202.
  • the material of the second resin layer 240 may be the same material as the material of the first resin layer 230, or may be a different material. In FIG. 3, the first resin layer 230 is omitted.
  • the mounting board 200 has a polygonal shape in a plan view from the thickness direction D1.
  • the mounting substrate 200 has a rectangular shape in a plan view from the thickness direction D1.
  • the mounting board 200 includes a plurality of via conductors 220 and a plurality of wiring conductors 221.
  • the plurality of via conductors 220 include via conductors 613c, 614c, 661.
  • the plurality of wiring conductors 221 include wiring conductors 612a, 613a, 613b, 614a, 614b, 660.
  • the plurality of wiring conductors 221 are included in any one of the plurality of conductive layers.
  • the power amplifier module 100 of the present embodiment when the power amplifier module 100 (mounting board 200) is viewed in a plan view from the thickness direction D1 of the mounting board 200, as shown in FIGS. 3 to 5, the first inductor 612 And the second inductor 613 are arranged so as to overlap each other. At this time, of the first inductor 612 and the second inductor 613, the second inductor 613 is arranged on the second main surface side with respect to the first inductor 612.
  • the winding direction of these inductors is the same with the thickness direction D1 as the winding axis.
  • the first inductor 612 is formed of the wiring conductor 612a.
  • the wiring conductor 612a is formed along the clockwise direction D10 with the connection portion with the capacitor 611 (corresponding to the first end of the first inductor 612) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 612a, which is the first inductor 612, is formed with the winding direction as the clockwise direction D10.
  • the tip of the wiring conductor 612a (corresponding to the second end of the first inductor) is connected to the wiring conductor 660 (ground wiring) included in the ground layer.
  • the second inductor 613 is formed of a wiring conductor 613a, a wiring conductor 613b, and a via conductor 613c.
  • the wiring conductor 613a is formed along the clockwise direction D10 with the connection portion with the capacitor 611 (corresponding to the first end of the second inductor 613) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 613a, which is a part of the second inductor 613, is formed with the winding direction as the clockwise direction D10.
  • the wiring conductor 613b is connected to the tip of the wiring conductor 613a via a via conductor 613c.
  • the wiring conductor 613b is formed along the clockwise direction D10 with the connection portion with the via conductor 613c as the starting point and the axis along the thickness direction D1 as the rotation axis (see FIGS. 3 and 5).
  • the tip of the wiring conductor 613b (corresponding to the second end of the second inductor 613) is electrically connected to the first changeover switch 45.
  • the first inductor 612 and the second inductor 613 are formed so that the winding directions are the same.
  • the first switch The second inductor 613 is arranged so as to overlap the first changeover switch 45 of 40 (see FIG. 4).
  • the second inductor 613 may be arranged so as to overlap the first changeover switch 45 when the entire second inductor 613 is viewed in a plan view from the thickness direction D1 of the mounting substrate 200. That is, the second inductor 613 may be arranged so that at least a part of the second inductor 613 overlaps with the first switch 40 when viewed in a plan view from the thickness direction D1 of the mounting substrate 200.
  • the power amplifier module 100 (mounting board 200) is viewed in a plan view from the thickness direction D1 of the mounting board 200. If so, it is arranged so as not to overlap with the power amplifier 80.
  • the third inductor 614 is formed of wiring conductors 614a and 614b and via conductors 614c.
  • the wiring conductor 614a is formed along the counterclockwise direction D11 with the connection portion with the capacitor 611 (corresponding to the first end of the third inductor 614) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 614a, which is a part of the third inductor 614, is formed with the winding direction as the counterclockwise direction D11.
  • the wiring conductor 614b is connected to the tip of the wiring conductor 614a via a via conductor 614c.
  • the wiring conductor 614b is formed along the counterclockwise direction D11 with the connection portion with the via conductor 614c as the starting point and the axis along the thickness direction D1 as the rotation axis (see FIGS. 3 and 5).
  • the tip of the wiring conductor 614b (corresponding to the second end of the third inductor 614) is electrically connected to the second changeover switch 46.
  • the communication device 500 includes a high frequency module 1 including a power amplifier module 100, an antenna 4, and a signal processing circuit 3.
  • the communication device 500 transmits / receives signals via the antenna 4.
  • the signal processing circuit 3 processes the signal passing through the high frequency module 1. Specifically, the signal processing circuit 3 processes a high-frequency signal (transmission signal) that passes through the power amplifier module 100. Further, the signal processing circuit 3 processes a high frequency signal (received signal) passing through the input matching circuit 70 and the low noise amplifier 90.
  • the signal processing circuit 3 includes, for example, an RF signal processing circuit 5 and a baseband signal processing circuit 6.
  • the baseband signal processing circuit 6 is, for example, a BBIC (Baseband Integrated Circuit), and is electrically connected to the RF signal processing circuit 5.
  • the baseband signal processing circuit 6 generates an I-phase signal and a Q-phase signal from the baseband signal.
  • the baseband signal processing circuit 6 performs IQ modulation processing by synthesizing an I-phase signal and a Q-phase signal, and outputs a transmission signal.
  • the transmission signal is generated as a modulation signal obtained by amplitude-modulating a carrier signal having a predetermined frequency with a period longer than the period of the carrier signal.
  • the RF signal processing circuit 5 is, for example, an RFIC (Radio Frequency Integrated Circuit), and is provided between the high frequency module 1 and the baseband signal processing circuit 6.
  • the RF signal processing circuit 5 has a function of performing signal processing on the transmission signal from the baseband signal processing circuit 6 and a function of performing signal processing on the received signal received by the antenna 4.
  • the RF signal processing circuit 5 is a multi-band compatible processing circuit, and can generate and amplify transmission signals of a plurality of communication bands.
  • the baseband signal processing circuit 6 is not an indispensable component.
  • the power amplifier module 100 of the above embodiment is an attenuation circuit (first) for attenuating the harmonics of the mounting board 200, the power amplifier 80, and the signal output from the power amplifier 80.
  • the attenuation circuit includes a plurality of inductors (first inductor 612, second inductor 613) that are inner-layered on the mounting board 200 and connected to the output terminal 81 of the power amplifier 80.
  • the plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction D1 of the mounting substrate 200.
  • the layout area of the power amplifier module 100 can be reduced. Therefore, the power amplifier module 100 can be miniaturized.
  • At least one inductor (for example, the second inductor 613) among the plurality of inductors is connected to the switch (first changeover switch 45).
  • the inductance component can be adjusted by using a switch. For example, when the switch is turned on, an inductance component is generated in the second inductor 613, and the overall inductance component can be made to appear small by the inductance component generated in the first inductor 612.
  • the power amplifier module 100 includes a second inductor 613 connected to the first changeover switch 45 and a third inductor 614 connected to the second changeover switch 46.
  • the first pattern is a pattern in which both the first changeover switch 45 and the second changeover switch 46 are in the off state.
  • the second pattern is a pattern in which the first changeover switch 45 is in the on state and the second changeover switch 46 is in the off state.
  • the third pattern is a pattern in which the first changeover switch 45 is in the off state and the second changeover switch 46 is in the on state.
  • the fourth pattern is a pattern in which both the first changeover switch 45 and the second changeover switch 46 are in the ON state. In each pattern, the generated inductance component is different.
  • an inductance component is generated only in the first inductor 612 having the smallest inductance value. For example, in this case, good communication can be realized by using the filter 31a.
  • an inductance component is generated in the first inductor 612 and the second inductor 613. For example, in this case, good communication can be realized by using the filter 32a.
  • an inductance component is generated in the first inductor 612 and the third inductor 614. For example, in this case, good communication can be realized by using the filter 33a.
  • an inductance component is generated in the first inductor 612, the second inductor 613, and the third inductor 614. For example, in this case, good communication can be realized by using the filter 34a.
  • the winding direction is the same for the first inductor 612 and the second inductor 613. According to this configuration, the inductance component of the second inductor 613 can be made to appear longer.
  • the attenuation circuit is included in the output matching circuit 60. Therefore, the output matching circuit 60 can be miniaturized.
  • the power amplifier module 100 As shown in FIG. 4, the first switch 40 and the like mounted on the second main surface 202 are covered on the second main surface 202 side of the mounting board 200. A second resin layer 240 is provided. Further, the power amplifier module 100 includes a plurality of external connection terminals 210 formed in a columnar shape, and is connected to the mother board by the plurality of external connection terminals 210.
  • the second resin layer 240 is omitted on the second main surface 202 side of the mounting substrate 200, and the mother is formed by a plurality of external connection terminals 215 formed in a spherical shape. It may be connected to a board.
  • Each of the plurality of external connection terminals 215 is, for example, a ball bump formed in a spherical shape.
  • the material of the ball bump is, for example, gold, copper, solder or the like.
  • One of the plurality of external connection terminals 215, the external connection terminal 215, is electrically connected to the antenna terminal T1.
  • the power amplifier module 100 may include a plurality of external connection terminals 210 and a plurality of external connection terminals 215.
  • one of the plurality of external connection terminals 210 may be electrically connected to the antenna terminal T1
  • one of the plurality of external connection terminals 215, the external connection terminal 215, may be the antenna terminal T1. May be electrically connected to.
  • the power amplifier module 100 is configured to include a mounting board 200 in which components are arranged on both the first main surface 201 and the second main surface 202 facing each other in the thickness direction D1. Not limited to.
  • the mounting board 200 a single-sided mounting board on which components are mounted on one of the first main surface 201 and the second main surface 202, for example, the first main surface 201 may be used.
  • the power amplifier module 100 is configured to include the third inductor 614, but is not limited to this configuration.
  • the third inductor 614 is not an essential component. That is, the power amplifier module 100 may be configured not to include the third inductor 614.
  • the first inductor 612 of the power amplifier module 100 is connected to the ground without a switch, but is not limited to this configuration.
  • the first inductor 612 may be connected to the ground via a switch.
  • each of the three or more inductors When viewed in a plan view from the thickness direction D1 of the mounting board 200, three or more inductors may be arranged so as to overlap each other. In this case, each of the three or more inductors is connected between the capacitor 611 and ground. Each of the three or more inductors is connected to ground with or without a switch.
  • the first attenuation circuit 61 has a configuration including the first inductor 612 and the second inductor 613, but the configuration is not limited to this.
  • the second attenuation circuit 62 may include a first inductor 612 and a second inductor 613. Further, at least one of the third attenuation circuit 63 and the fourth attenuation circuit 64 may include the first inductor 612 and the second inductor 613.
  • Both the first attenuation circuit 61 and the second attenuation circuit 62 may include the first inductor 612 and the second inductor 613.
  • at least two of the first attenuation circuit 61, the second attenuation circuit 62, the third attenuation circuit 63, and the fourth attenuation circuit 64 may include the first inductor 612 and the second inductor 613. ..
  • the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 are configured as one chip, but the configuration is not limited to this. It is not essential that the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 are integrated into one chip.
  • the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 may be individually arranged (mounted) on the second main surface 202. Alternatively, two components of the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 may be integrated into one chip.
  • the power amplifier module (100) of the first aspect is an attenuation that attenuates the harmonics of the signals output from the mounting board (200), the power amplifier (80), and the power amplifier (80).
  • a circuit for example, a first attenuation circuit 61 is provided.
  • the attenuation circuit includes a plurality of inductors (first inductor 612, second inductor 613) which are inner-layered on the mounting board (200) and connected to the output terminal (81) of the power amplifier (80).
  • the plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction (D1) of the mounting substrate (200).
  • the layout area of the power amplifier module (100) (mounting board 200) can be reduced. Therefore, the power amplifier module (100) can be miniaturized.
  • the winding directions of the plurality of inductors are the same with the thickness direction (D1) as the winding axis.
  • the power amplifier module (100) of the third aspect includes an output matching circuit (60) including an attenuation circuit in the first or second aspect.
  • the output matching circuit (60) matches the impedance between the power amplifier (80) and the external circuit (for example, the band changeover switch 41) connected to the output side of the output matching circuit (60).
  • the output matching circuit (60) can be downsized.
  • the power amplifier module (100) of the fourth aspect further includes a switch circuit (first switch 40) in any one of the first to third aspects.
  • the switch circuit includes a switch (for example, a first changeover switch 45) connected to one of a plurality of inductors.
  • the inductance component can be adjusted by using a switch. For example, when the switch is turned on, an inductance component is generated in the inductor connected to the switch, and the total inductance component can be reduced by the inductance components generated in other inductors.
  • the mounting substrate (200) has a first main surface (201) and a second main surface (202) facing each other.
  • the power amplifier (80) is provided on the first main surface (201), and the switch circuit is provided on the second main surface (202).
  • the switch circuit is provided on the second main surface (202).
  • the path length between the above one inductor and the switch can be shortened.
  • the switch circuit further includes a changeover switch (for example, a band changeover switch 41) for switching the frequency band used for communication.
  • a changeover switch for example, a band changeover switch 41
  • the one inductor is arranged closest to the second main surface (202) among the plurality of inductors.
  • the path length between the above one inductor and the switch can be shortened.
  • the plurality of inductors when viewed in a plan view from the thickness direction (D1) of the mounting substrate (200), the plurality of inductors have power. It is arranged so as not to overlap with the amplifier (80).
  • the communication device (500) of the ninth aspect is a signal processing circuit (3) that processes a high frequency signal passing through the power amplifier module (100) of any one of the first to eighth aspects and the power amplifier module (100). And.
  • the power amplifier module (100) can be miniaturized.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

L'invention concerne un module amplificateur de puissance et un dispositif de communication ayant une taille réduite. Un module amplificateur de puissance (100) comprend un substrat de montage (200), un amplificateur de puissance (80) et un circuit d'atténuation (tel qu'un premier circuit d'atténuation 61) pour atténuer les harmoniques d'un signal délivré par l'amplificateur de puissance (80). Le circuit d'atténuation comprend une pluralité d'inductances (une première inductance 612, une deuxième inductance 613) qui sont empilées à l'intérieur du substrat de montage (200) et sont connectées à une borne de sortie (81) de l'amplificateur de puissance (80). La pluralité d'inductances sont disposées de manière à se chevaucher lorsque le substrat de montage (200) est vu dans un plan depuis un sens de l'épaisseur (D1).
PCT/JP2020/045528 2020-04-24 2020-12-07 Module amplificateur de puissance et dispositif de communication WO2021215041A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-077818 2020-04-24
JP2020077818 2020-04-24

Publications (1)

Publication Number Publication Date
WO2021215041A1 true WO2021215041A1 (fr) 2021-10-28

Family

ID=78270710

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/045528 WO2021215041A1 (fr) 2020-04-24 2020-12-07 Module amplificateur de puissance et dispositif de communication

Country Status (1)

Country Link
WO (1) WO2021215041A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129565A (ja) * 2005-11-04 2007-05-24 Alps Electric Co Ltd ローパスフィルタ
JP2007158748A (ja) * 2005-12-06 2007-06-21 Renesas Technology Corp Ｒｆ電力増幅器モジュール
JP2008211764A (ja) * 2006-12-08 2008-09-11 Renesas Technology Corp 電子装置およびｒｆモジュール
JP2017208729A (ja) * 2016-05-19 2017-11-24 株式会社村田製作所 電力増幅モジュール
JP2018032951A (ja) * 2016-08-23 2018-03-01 株式会社村田製作所 電力増幅モジュール
JP2018064266A (ja) * 2016-10-07 2018-04-19 株式会社村田製作所 高周波フィルタおよび高周波モジュール
WO2019240096A1 (fr) * 2018-06-11 2019-12-19 株式会社村田製作所 Module haute fréquence et dispositif de communication

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129565A (ja) * 2005-11-04 2007-05-24 Alps Electric Co Ltd ローパスフィルタ
JP2007158748A (ja) * 2005-12-06 2007-06-21 Renesas Technology Corp Ｒｆ電力増幅器モジュール
JP2008211764A (ja) * 2006-12-08 2008-09-11 Renesas Technology Corp 電子装置およびｒｆモジュール
JP2017208729A (ja) * 2016-05-19 2017-11-24 株式会社村田製作所 電力増幅モジュール
JP2018032951A (ja) * 2016-08-23 2018-03-01 株式会社村田製作所 電力増幅モジュール
JP2018064266A (ja) * 2016-10-07 2018-04-19 株式会社村田製作所 高周波フィルタおよび高周波モジュール
WO2019240096A1 (fr) * 2018-06-11 2019-12-19 株式会社村田製作所 Module haute fréquence et dispositif de communication

Similar Documents

Publication Publication Date Title
US11476226B2 (en) Radio-frequency module and communication device
JP5677499B2 (ja) 高周波回路モジュール
US11043983B2 (en) Radio frequency module and communication device including the same
WO2020184613A1 (fr) Module haute fréquence et dispositif de communication
WO2021044691A1 (fr) Module haute fréquence et dispositif de communication
US11418158B2 (en) Radio-frequency module and communication device
US11349507B2 (en) Radio frequency module and communication device
US11394421B2 (en) Radio frequency module and communication device
WO2021084848A1 (fr) Module haute fréquence et dispositif de communication
JP4702622B2 (ja) スイッチモジュール
WO2023112577A1 (fr) Module haute fréquence et dispositif de communication
JP2021197590A (ja) 高周波モジュール及び通信装置
WO2021215041A1 (fr) Module amplificateur de puissance et dispositif de communication
WO2021192429A1 (fr) Module haute fréquence et dispositif de communication
CN215912092U (zh) 高频模块和通信装置
WO2022034824A1 (fr) Circuit haute fréquence et dispositif de communication
JP2003152590A (ja) アンテナスイッチモジュール
JP4735773B2 (ja) 高周波モジュール
WO2019160140A1 (fr) Substrat multicouche, filtre multiplexeur, circuit frontal haute fréquence et dispositif de communication
WO2022230708A1 (fr) Circuit haute fréquence et dispositif de communication
WO2022131157A1 (fr) Module haute fréquence et dispositif de communication
US20230103162A1 (en) High frequency module and communication device
WO2021131125A1 (fr) Module haute fréquence et dispositif de communication
WO2022091852A1 (fr) Module haute fréquence et dispositif de communication
WO2021241064A1 (fr) Module haute fréquence et dispositif de communication

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20932129

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20932129

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP