WO2021215041A1 - Power amplifier module and communication device - Google Patents

Power amplifier module and communication device Download PDF

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Publication number
WO2021215041A1
WO2021215041A1 PCT/JP2020/045528 JP2020045528W WO2021215041A1 WO 2021215041 A1 WO2021215041 A1 WO 2021215041A1 JP 2020045528 W JP2020045528 W JP 2020045528W WO 2021215041 A1 WO2021215041 A1 WO 2021215041A1
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WO
WIPO (PCT)
Prior art keywords
power amplifier
inductor
circuit
amplifier module
switch
Prior art date
Application number
PCT/JP2020/045528
Other languages
French (fr)
Japanese (ja)
Inventor
崇央 豊村
佑二 竹松
Original Assignee
株式会社村田製作所
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2021215041A1 publication Critical patent/WO2021215041A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/03—Constructional details, e.g. casings, housings
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits

Definitions

  • the present invention generally relates to a power amplifier module and a communication device, and more particularly to a power amplifier module and a communication device including a circuit for performing impedance matching.
  • Patent Document 1 a high frequency module including a circuit for impedance matching is known (see Patent Document 1).
  • Patent Document 1 an output terminal of a power amplifier (power amplifier) and a transmission output matching circuit (output matching circuit) that performs impedance matching are connected. Further, the transmission output matching circuit is connected to the transmission filter. As a result, the transmission output matching circuit performs impedance matching between the power amplifier and the transmission filter.
  • a module having at least an output matching circuit and a power amplifier.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a power amplifier module and a communication device that can be miniaturized.
  • the power amplifier module includes a mounting board, a power amplifier, and an attenuation circuit for attenuating the harmonics of the signal output from the power amplifier.
  • the attenuation circuit includes a plurality of inductors that are inner-layered on the mounting board and connected to the output terminals of the power amplifier. The plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction of the mounting substrate.
  • the communication device includes the power amplifier module and a signal processing circuit for processing a high frequency signal passing through the power amplifier module.
  • miniaturization can be achieved.
  • FIG. 1 is a circuit diagram illustrating a configuration of a high frequency module and a communication device including a power amplifier module according to an embodiment.
  • FIG. 2 is a circuit diagram illustrating the configuration of the power amplifier module of the same.
  • FIG. 3 is a perspective view of the power amplifier module of the above.
  • FIG. 4 is a cross-sectional view of X1-X1 of FIG. 3 in which a part of the power amplifier module of the same is seen through.
  • FIG. 5 is a perspective view of a part of the power amplifier module of the same as above.
  • FIG. 6 is a cross-sectional view showing a part of the power amplifier module according to the first modification.
  • FIGS. 1 to 6 referred to in the following embodiments and the like are schematic views, and the ratio of the size and the thickness of each component in the figure does not necessarily reflect the actual dimensional ratio. Not necessarily.
  • the high frequency module 1 includes a power amplifier module 100, and is used, for example, in a communication device 500 compatible with multimode / multiband.
  • the communication device 500 is, for example, a mobile phone (for example, a smartphone), but is not limited to this, and may be, for example, a wearable terminal (for example, a smart watch) or the like.
  • the high frequency module 1 is a module capable of supporting, for example, a 4G (4th generation mobile communication) standard, a 5G (5th generation mobile communication) standard, and the like.
  • the 4G standard is, for example, a 3GPP LTE (LTE: Long Term Evolution) standard.
  • the 5G standard is, for example, 5G NR (New Radio).
  • the high frequency module 1 is a module capable of supporting carrier aggregation and dual connectivity.
  • the high frequency module 1 is configured to, for example, amplify the transmission signal (high frequency signal) input from the signal processing circuit 3 and output it to the antenna 4. Further, the high frequency module 1 is configured to amplify the received signal (high frequency signal) input from the antenna 4 and output it to the signal processing circuit 3.
  • the signal processing circuit 3 is not a component of the high frequency module 1, but a component of the communication device 500 including the high frequency module 1.
  • the high frequency module 1 according to the embodiment is controlled by, for example, a signal processing circuit 3 included in the communication device 500.
  • the communication device 500 includes a high frequency module 1 and a signal processing circuit 3.
  • the communication device 500 further includes an antenna 4.
  • the signal processing circuit 3 processes a signal received via the antenna 4 (received signal) and a signal transmitted via the antenna 4 (transmitted signal).
  • the high-frequency module 1 includes a mounting board 200, an antenna terminal T1, an antenna switch 10, a matching circuit 20, a filter group 30, and a first switch 40.
  • a second switch 50, an output matching circuit 60, an input matching circuit 70, a power amplifier 80, and a low noise amplifier 90 are provided.
  • the power amplifier module 100 includes a first switch 40, an output matching circuit 60, and a power amplifier 80.
  • the high frequency module 1 includes a mounting board 200, an antenna terminal T1, an antenna switch 10, a matching circuit 20, a filter group 30, a power amplifier module 100, an input matching circuit 70, and a low noise amplifier 90. Be prepared.
  • the high frequency module 1 further includes a plurality of external connection terminals 210 (see FIG. 4).
  • the antenna terminal T1 is electrically connected to the antenna 4.
  • the antenna switch 10 is a switch capable of selecting a signal path of at least one communication band among the signal paths of a plurality of communication bands as a signal path connected to the antenna 4.
  • the antenna switch 10 has a common terminal 11 and a plurality of (four in the illustrated example) selection terminals 12 to 15.
  • the common terminal 11 is electrically connected to the antenna terminal T1.
  • the selection terminal 12 is electrically connected to the filter 31 included in the filter group 30.
  • the selection terminal 13 is electrically connected to the filter 32 included in the filter group 30.
  • the selection terminal 14 is electrically connected to the filter 33 included in the filter group 30.
  • the selection terminal 15 is electrically connected to the filter 34 included in the filter group 30.
  • the antenna switch 10 is a switch capable of selecting at least one of a plurality of selection terminals 12 to 15 as a connection destination of the common terminal 11. That is, the antenna switch 10 is a switch capable of selectively connecting the filter 31, the filter 32, the filter 33, the filter 34, and the antenna 4.
  • the antenna switch 10 is controlled by, for example, the signal processing circuit 3.
  • the antenna switch 10 electrically connects at least one of the selection terminal 12, the selection terminal 13, and the selection terminal 14 and the common terminal 11 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the matching circuit 20 has, for example, a plurality of (four in the illustrated example) chip inductors 21 to 24 (see FIG. 1).
  • Each of the chip inductors 21 to 24 is a circuit element that performs impedance matching between the antenna switch 10 and the filter group 30.
  • One end of each of the chip inductors 21 to 24 is connected to a path connecting the antenna switch 10 and the filters 31 to 34 of the filter group 30, and the other end is connected to a reference terminal (ground).
  • the chip inductors 21 to 24 may be connected in series to the path instead of being connected between the path and the ground.
  • the matching circuit 20 is not limited to the chip inductors 21 to 24, and may be a capacitor or a circuit in which an inductor and a capacitor are combined.
  • the filter group 30 has a plurality of filters 31 to 34 (see FIG. 1).
  • the plurality of filters 31 to 34 are, for example, elastic wave filters, and each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators.
  • the surface acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves.
  • Filters 31-34 are duplexers.
  • the filter 31 includes a filter 31a and a filter 31b.
  • the filter 32 includes a filter 32a and a filter 32b.
  • the filter 33 includes a filter 33a and a filter 33b.
  • the filter 34 includes a filter 34a and a filter 34b.
  • the filters 31a, 32a, 33a, 34a are transmission filters for passing a transmission signal.
  • the filters 31b, 32b, 33b, 34b are reception filters for passing a reception signal.
  • the filter 31a passes the transmission signal of the Band 71 in the 4G standard, for example.
  • the filter 32a passes, for example, the transmission signal of Band 13 in the 4G standard.
  • the filter 33a passes, for example, the transmission signal of Band 20 in the 4G standard.
  • the filter 34a passes, for example, a Band 8 transmission signal in the 4G standard.
  • the filter 31b passes the received signal of the Band 71 in the 4G standard, for example.
  • the filter 32b passes the received signal of Band 13 in the 4G standard, for example.
  • the filter 33b passes the received signal of the Band 20 in the 4G standard, for example.
  • the filter 34b passes the received signal of Band 8 in the 4G standard, for example.
  • Each of the filters 31 to 34 is connected one-to-one to a plurality of selection terminals of the antenna switch 10.
  • Each of the filters 31 to 34 is electrically connected one-to-one to a plurality of (three in the illustrated example) selection terminals 43a to 43d of the band changeover switch 41 of the first switch 40.
  • the filter 31a is electrically connected to the selection terminal 43a
  • the filter 32a is electrically connected to the selection terminal 43b
  • the filter 33a is electrically connected to the selection terminal 43c
  • the filter 34a is electrically connected to the selection terminal 43d.
  • Each of the filters 31 to 34 is connected one-to-one to a plurality of (four in the illustrated example) selection terminals 52a to 52d of the second switch 50.
  • the filter 31b is electrically connected to the selection terminal 52a
  • the filter 32b is electrically connected to the selection terminal 52b
  • the filter 33b is electrically connected to the selection terminal 52c
  • the filter 34b is electrically connected to the selection terminal 52d.
  • the second switch 50 has a common terminal 51 and a plurality of (four in the illustrated example) selection terminals 52a to 52d.
  • the second switch 50 is a switch that switches the connection state between the common terminal 51 and the selection terminals 52a to 52d.
  • the common terminal 51 is electrically connected to the low noise amplifier 90. Specifically, the common terminal 51 is connected to the low noise amplifier 90 via the input matching circuit 70.
  • the plurality of selection terminals 52a to 52d are connected one-to-one to the plurality of filters 31 to 34. In the present embodiment, the selection terminal 52a is connected to the filter 31b, the selection terminal 52b is connected to the filter 32b, the selection terminal 52c is connected to the filter 33b, and the selection terminal 52d is connected to the filter 34b.
  • the second switch 50 electrically connects any one of the selection terminals 52a to 52d and the common terminal 51 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the input matching circuit 70 is a circuit element that performs impedance matching between the second switch 50 and the low noise amplifier 90.
  • the low noise amplifier 90 amplifies the signal (received signal) received by the antenna 4.
  • the input terminal 91 of the low noise amplifier 90 is electrically connected to the input matching circuit 70.
  • the output terminal 92 of the low noise amplifier 90 is connected to the signal processing circuit 3.
  • the low noise amplifier 90 amplifies a signal (received signal) that has passed through any of the filters 31b to 34b and the input matching circuit 70.
  • the low noise amplifier 90 outputs the amplified received signal to the signal processing circuit 3.
  • the power amplifier module 100 includes a first switch 40, an output matching circuit 60, and a power amplifier 80 (see FIG. 1).
  • the first switch 40 is, for example, a switch IC (Integrated Circuit). As shown in FIG. 1, the first switch 40 includes a band changeover switch 41, a first changeover switch 45, and a second changeover switch 46.
  • the band changeover switch 41 is a switch for switching the band used for signal transmission. As shown in FIG. 1, the band changeover switch 41 has a common terminal 42 and a plurality of (four in the illustrated example) selection terminals 43a to 43d.
  • the common terminal 42 is electrically connected to the output matching circuit 60.
  • the selection terminal 43a is electrically connected to the filter 31a.
  • the selection terminal 43b is electrically connected to the filter 32a.
  • the selection terminal 43c is electrically connected to the filter 33a.
  • the selection terminal 43d is electrically connected to the filter 34a.
  • the band changeover switch 41 is a switch that can select at least one of a plurality of selection terminals 43a to 43d as a connection destination of the common terminal 42. That is, the band changeover switch 41 is a switch capable of selectively connecting the filter 31, the filter 32, the filter 33, the filter 34, and the output matching circuit 60.
  • the band changeover switch 41 is controlled by, for example, the signal processing circuit 3.
  • the band changeover switch 41 electrically connects at least one of the selection terminals 43a to 43d and the common terminal 42 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the first changeover switch 45 is provided between the second inductor 613 (see FIG. 2), which will be described later, and the ground.
  • the first changeover switch 45 includes a first terminal 451 and a second terminal 452.
  • the first terminal 451 is electrically connected to the second inductor 613.
  • the second terminal 452 is electrically connected to the ground.
  • the first changeover switch 45 is controlled by, for example, the signal processing circuit 3.
  • the first changeover switch 45 electrically connects or disconnects the first terminal 451 and the second terminal 452 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the second changeover switch 46 is provided between the third inductor 614 (see FIG. 2), which will be described later, and the ground.
  • the second changeover switch 46 includes a first terminal 461 and a second terminal 462.
  • the first terminal 461 is electrically connected to the third inductor 614.
  • the second terminal 462 is electrically connected to the ground.
  • the second changeover switch 46 is controlled by, for example, the signal processing circuit 3.
  • the second changeover switch 46 electrically connects or disconnects the first terminal 461 and the second terminal 462 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
  • the output matching circuit 60 is a circuit element that matches the impedance between the power amplifier 80 and the external circuit (here, the band changeover switch 41) connected to the output side of the output matching circuit 60.
  • the detailed configuration of the output matching circuit 60 will be described later.
  • the power amplifier 80 amplifies the signal (transmitted signal) transmitted from the antenna 4.
  • the input terminal 82 of the power amplifier 80 is connected to the signal processing circuit 3.
  • the output terminal 81 of the power amplifier 80 is connected to the output matching circuit 60.
  • the power amplifier 80 amplifies the signal output from the signal processing circuit 3.
  • the power amplifier 80 outputs the amplified transmission signal to the band changeover switch 41 via the output matching circuit 60.
  • the output matching circuit 60 includes a first attenuation circuit 61, a second attenuation circuit 62, a third attenuation circuit 63, and a fourth attenuation circuit 64.
  • the first attenuation circuit 61 is a circuit that attenuates harmonics that are double waves of the transmission signal. As shown in FIG. 2, the first attenuation circuit 61 includes a capacitor 611, a first inductor 612, a second inductor 613, a third inductor 614, and a fourth inductor 615.
  • the fourth inductor 615 is inserted in series with the path R60 (see FIG. 3) connecting the power amplifier 80 and the first switch 40 in the power amplifier module. Specifically, the first end of the fourth inductor 615 is electrically connected to the output terminal 81 of the power amplifier 80. The second end of the fourth inductor 615 is electrically connected to the second attenuation circuit 62.
  • the capacitor 611 is provided between the second end of the fourth inductor 615 and the ground. Specifically, the first end of the capacitor 611 is electrically connected to the second end of the fourth inductor 615. The second end of the capacitor 611 is electrically connected to the first end of each of the first inductor 612, the second inductor 613, and the third inductor 614.
  • the first inductor 612 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the first inductor 612 is electrically connected to the second end of the capacitor 611. The second end of the first inductor 612 is electrically connected to ground.
  • the second inductor 613 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the second inductor 613 is electrically connected to the second end of the capacitor 611. The second end of the second inductor 613 is electrically connected to the first terminal 451 of the first changeover switch 45. The second inductor 613 is connected to the ground by connecting between the first terminal 451 of the first changeover switch 45 and the second terminal 452 of the first changeover switch 45.
  • the third inductor 614 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the third inductor 614 is electrically connected to the second end of the capacitor 611. The second end of the third inductor 614 is electrically connected to the first terminal 461 of the second changeover switch 46. The third inductor 614 is connected to the ground by being connected between the first terminal 461 of the second changeover switch 46 and the second terminal 462 of the second changeover switch 46.
  • the first inductor 612, the second inductor 613, and the third inductor 614 are electrically connected to the fourth inductor 615. That is, the first inductor 612, the second inductor 613, and the third inductor 614 are electrically connected to the output terminal 81 of the power amplifier 80.
  • the inductance value of the first inductor 612 is smaller than the inductance value of the second inductor 613 and the inductance value of the third inductor 614.
  • the inductance value of the second inductor 613 is larger than the inductance value of the first inductor 612 and the inductance value of the third inductor 614. That is, among the first inductor 612, the second inductor 613, and the third inductor 614, the inductance value of the first inductor 612 is the smallest, then the inductance value of the third inductor 614 is the smallest, and the inductance value of the second inductor 613 is. The largest. That is, the inequality "inductance value of the first inductor 612 ⁇ inductance value of the third inductor 614 ⁇ inductance value of the second inductor 613" is established.
  • the inductor connected to the ground is selected from the first inductor 612, the second inductor 613, and the third inductor 614. NS. That is, the inductance value of the inductor connected to the ground can be changed by switching the open state and the closed state of the first changeover switch 45 and the second changeover switch 46, respectively.
  • the structure related to the arrangement of the first inductor 612, the second inductor 613, and the third inductor 614 will be described later.
  • the second attenuation circuit 62 is a circuit that attenuates harmonics that are the third harmonic of the transmitted signal.
  • the second attenuation circuit 62 has an inductor 621 and a capacitor 622, as shown in FIG.
  • the inductor 621 is inserted in series with the path R60 (see FIG. 3). Specifically, the first end of the inductor 621 is electrically connected to the second end of the fourth inductor 615 of the first attenuation circuit 61. The second end of the inductor 621 is electrically connected to the third attenuation circuit 63.
  • the capacitor 622 is provided between the second end of the inductor 621 and the ground. Specifically, the first end of the capacitor 622 is electrically connected to the second end of the inductor 621. The second end of capacitor 622 is electrically connected to ground.
  • the third attenuation circuit 63 is a circuit that passes a signal on the higher frequency side than the predetermined frequency band (first frequency band). That is, the third attenuation circuit 63 is a circuit that attenuates a signal on the frequency side lower than the first frequency band. As shown in FIG. 2, the third attenuation circuit 63 includes a capacitor 631 and an inductor 632.
  • Capacitor 631 is inserted in series with path R60 (see FIG. 3). Specifically, the first end of the capacitor 631 is electrically connected to the second end of the inductor 621 of the second attenuation circuit 62. The second end of the capacitor 631 is electrically connected to the fourth attenuation circuit 64.
  • the inductor 632 is provided between the second end of the capacitor 631 and the ground. Specifically, the first end of the inductor 632 is electrically connected to the second end of the capacitor 631. The second end of the inductor 632 is electrically connected to ground.
  • the fourth attenuation circuit 64 is a circuit that passes a signal on the lower frequency side than the predetermined frequency band (second frequency band). That is, the fourth attenuation circuit 64 is a circuit that attenuates a signal on the higher frequency side than the second frequency band. As shown in FIG. 2, the fourth attenuation circuit 64 has an inductor 641 and a capacitor 642.
  • the inductor 641 is inserted in series with the path R60 (see FIG. 3). Specifically, the first end of the inductor 641 is electrically connected to the second end of the capacitor 631 of the third attenuation circuit 63. The second end of the inductor 641 is electrically connected to the band changeover switch 41 of the first switch 40.
  • the capacitor 642 is provided between the second end of the inductor 641 and the ground. Specifically, the first end of the capacitor 642 is electrically connected to the second end of the inductor 641. The second end of capacitor 642 is electrically connected to ground.
  • the mounting board 200 has a first main surface 201 and a second main surface 202 facing each other in the thickness direction D1.
  • a power amplifier 80, a capacitor 611, a capacitor 622, a capacitor 631, and the like are arranged on the first main surface 201.
  • the first switch 40 is arranged on the second main surface 202.
  • the mounting board 200 is, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics), an HTCC (High Temperature Co-fired Ceramics), or a resin board.
  • the mounting substrate 200 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers.
  • the plurality of dielectric layers and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting substrate 200.
  • the plurality of conductive layers are formed in a predetermined pattern determined for each layer.
  • Each of the plurality of conductive layers includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 200.
  • the material of each conductive layer is, for example, copper.
  • the plurality of conductive layers include a ground layer. In the power amplifier module 100, a plurality of ground terminals and a ground layer are electrically connected via a via conductor or the like included in the mounting substrate 200.
  • the mounting board 200 is not limited to the printed wiring board and the LTCC board, but may be a wiring structure.
  • the wiring structure is, for example, a multi-layer structure.
  • the multilayer structure includes at least one insulating layer and at least one conductive layer.
  • the insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer.
  • the conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer.
  • the conductive layer may include one or more rewiring sections.
  • the first surface is the first main surface 201 of the mounting board 200
  • the second surface is the second main surface 202 of the mounting board 200.
  • the wiring structure may be, for example, an interposer.
  • the interposer may be an interposer using a silicon substrate, or may be a substrate composed of multiple layers.
  • the power amplifier module 100 has a plurality of external connection terminals 210.
  • the plurality of external connection terminals 210 connect the power amplifier module 100 to the mother board on which the signal processing circuit 3 and the like are mounted.
  • the plurality of external connection terminals 210 are columnar (for example, columnar) electrodes arranged (provided) on the second main surface 202 of the mounting substrate 200.
  • the material of the plurality of external connection terminals 210 is, for example, a metal (for example, copper, copper alloy, etc.).
  • One of the plurality of external connection terminals 210 is electrically connected to the antenna terminal T1.
  • the power amplifier module 100 has a first resin layer 230 on the first main surface 201 of the mounting board 200, which covers the power amplifier 80, the capacitor 611, the capacitor 622, the capacitor 631, and the like mounted on the first main surface 201. Further prepare.
  • the power amplifier module 100 further includes a second resin layer 240 on the second main surface 202 of the mounting board 200, which covers the first switch 40 and the like mounted on the second main surface 202.
  • the material of the second resin layer 240 may be the same material as the material of the first resin layer 230, or may be a different material. In FIG. 3, the first resin layer 230 is omitted.
  • the mounting board 200 has a polygonal shape in a plan view from the thickness direction D1.
  • the mounting substrate 200 has a rectangular shape in a plan view from the thickness direction D1.
  • the mounting board 200 includes a plurality of via conductors 220 and a plurality of wiring conductors 221.
  • the plurality of via conductors 220 include via conductors 613c, 614c, 661.
  • the plurality of wiring conductors 221 include wiring conductors 612a, 613a, 613b, 614a, 614b, 660.
  • the plurality of wiring conductors 221 are included in any one of the plurality of conductive layers.
  • the power amplifier module 100 of the present embodiment when the power amplifier module 100 (mounting board 200) is viewed in a plan view from the thickness direction D1 of the mounting board 200, as shown in FIGS. 3 to 5, the first inductor 612 And the second inductor 613 are arranged so as to overlap each other. At this time, of the first inductor 612 and the second inductor 613, the second inductor 613 is arranged on the second main surface side with respect to the first inductor 612.
  • the winding direction of these inductors is the same with the thickness direction D1 as the winding axis.
  • the first inductor 612 is formed of the wiring conductor 612a.
  • the wiring conductor 612a is formed along the clockwise direction D10 with the connection portion with the capacitor 611 (corresponding to the first end of the first inductor 612) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 612a, which is the first inductor 612, is formed with the winding direction as the clockwise direction D10.
  • the tip of the wiring conductor 612a (corresponding to the second end of the first inductor) is connected to the wiring conductor 660 (ground wiring) included in the ground layer.
  • the second inductor 613 is formed of a wiring conductor 613a, a wiring conductor 613b, and a via conductor 613c.
  • the wiring conductor 613a is formed along the clockwise direction D10 with the connection portion with the capacitor 611 (corresponding to the first end of the second inductor 613) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 613a, which is a part of the second inductor 613, is formed with the winding direction as the clockwise direction D10.
  • the wiring conductor 613b is connected to the tip of the wiring conductor 613a via a via conductor 613c.
  • the wiring conductor 613b is formed along the clockwise direction D10 with the connection portion with the via conductor 613c as the starting point and the axis along the thickness direction D1 as the rotation axis (see FIGS. 3 and 5).
  • the tip of the wiring conductor 613b (corresponding to the second end of the second inductor 613) is electrically connected to the first changeover switch 45.
  • the first inductor 612 and the second inductor 613 are formed so that the winding directions are the same.
  • the first switch The second inductor 613 is arranged so as to overlap the first changeover switch 45 of 40 (see FIG. 4).
  • the second inductor 613 may be arranged so as to overlap the first changeover switch 45 when the entire second inductor 613 is viewed in a plan view from the thickness direction D1 of the mounting substrate 200. That is, the second inductor 613 may be arranged so that at least a part of the second inductor 613 overlaps with the first switch 40 when viewed in a plan view from the thickness direction D1 of the mounting substrate 200.
  • the power amplifier module 100 (mounting board 200) is viewed in a plan view from the thickness direction D1 of the mounting board 200. If so, it is arranged so as not to overlap with the power amplifier 80.
  • the third inductor 614 is formed of wiring conductors 614a and 614b and via conductors 614c.
  • the wiring conductor 614a is formed along the counterclockwise direction D11 with the connection portion with the capacitor 611 (corresponding to the first end of the third inductor 614) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 614a, which is a part of the third inductor 614, is formed with the winding direction as the counterclockwise direction D11.
  • the wiring conductor 614b is connected to the tip of the wiring conductor 614a via a via conductor 614c.
  • the wiring conductor 614b is formed along the counterclockwise direction D11 with the connection portion with the via conductor 614c as the starting point and the axis along the thickness direction D1 as the rotation axis (see FIGS. 3 and 5).
  • the tip of the wiring conductor 614b (corresponding to the second end of the third inductor 614) is electrically connected to the second changeover switch 46.
  • the communication device 500 includes a high frequency module 1 including a power amplifier module 100, an antenna 4, and a signal processing circuit 3.
  • the communication device 500 transmits / receives signals via the antenna 4.
  • the signal processing circuit 3 processes the signal passing through the high frequency module 1. Specifically, the signal processing circuit 3 processes a high-frequency signal (transmission signal) that passes through the power amplifier module 100. Further, the signal processing circuit 3 processes a high frequency signal (received signal) passing through the input matching circuit 70 and the low noise amplifier 90.
  • the signal processing circuit 3 includes, for example, an RF signal processing circuit 5 and a baseband signal processing circuit 6.
  • the baseband signal processing circuit 6 is, for example, a BBIC (Baseband Integrated Circuit), and is electrically connected to the RF signal processing circuit 5.
  • the baseband signal processing circuit 6 generates an I-phase signal and a Q-phase signal from the baseband signal.
  • the baseband signal processing circuit 6 performs IQ modulation processing by synthesizing an I-phase signal and a Q-phase signal, and outputs a transmission signal.
  • the transmission signal is generated as a modulation signal obtained by amplitude-modulating a carrier signal having a predetermined frequency with a period longer than the period of the carrier signal.
  • the RF signal processing circuit 5 is, for example, an RFIC (Radio Frequency Integrated Circuit), and is provided between the high frequency module 1 and the baseband signal processing circuit 6.
  • the RF signal processing circuit 5 has a function of performing signal processing on the transmission signal from the baseband signal processing circuit 6 and a function of performing signal processing on the received signal received by the antenna 4.
  • the RF signal processing circuit 5 is a multi-band compatible processing circuit, and can generate and amplify transmission signals of a plurality of communication bands.
  • the baseband signal processing circuit 6 is not an indispensable component.
  • the power amplifier module 100 of the above embodiment is an attenuation circuit (first) for attenuating the harmonics of the mounting board 200, the power amplifier 80, and the signal output from the power amplifier 80.
  • the attenuation circuit includes a plurality of inductors (first inductor 612, second inductor 613) that are inner-layered on the mounting board 200 and connected to the output terminal 81 of the power amplifier 80.
  • the plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction D1 of the mounting substrate 200.
  • the layout area of the power amplifier module 100 can be reduced. Therefore, the power amplifier module 100 can be miniaturized.
  • At least one inductor (for example, the second inductor 613) among the plurality of inductors is connected to the switch (first changeover switch 45).
  • the inductance component can be adjusted by using a switch. For example, when the switch is turned on, an inductance component is generated in the second inductor 613, and the overall inductance component can be made to appear small by the inductance component generated in the first inductor 612.
  • the power amplifier module 100 includes a second inductor 613 connected to the first changeover switch 45 and a third inductor 614 connected to the second changeover switch 46.
  • the first pattern is a pattern in which both the first changeover switch 45 and the second changeover switch 46 are in the off state.
  • the second pattern is a pattern in which the first changeover switch 45 is in the on state and the second changeover switch 46 is in the off state.
  • the third pattern is a pattern in which the first changeover switch 45 is in the off state and the second changeover switch 46 is in the on state.
  • the fourth pattern is a pattern in which both the first changeover switch 45 and the second changeover switch 46 are in the ON state. In each pattern, the generated inductance component is different.
  • an inductance component is generated only in the first inductor 612 having the smallest inductance value. For example, in this case, good communication can be realized by using the filter 31a.
  • an inductance component is generated in the first inductor 612 and the second inductor 613. For example, in this case, good communication can be realized by using the filter 32a.
  • an inductance component is generated in the first inductor 612 and the third inductor 614. For example, in this case, good communication can be realized by using the filter 33a.
  • an inductance component is generated in the first inductor 612, the second inductor 613, and the third inductor 614. For example, in this case, good communication can be realized by using the filter 34a.
  • the winding direction is the same for the first inductor 612 and the second inductor 613. According to this configuration, the inductance component of the second inductor 613 can be made to appear longer.
  • the attenuation circuit is included in the output matching circuit 60. Therefore, the output matching circuit 60 can be miniaturized.
  • the power amplifier module 100 As shown in FIG. 4, the first switch 40 and the like mounted on the second main surface 202 are covered on the second main surface 202 side of the mounting board 200. A second resin layer 240 is provided. Further, the power amplifier module 100 includes a plurality of external connection terminals 210 formed in a columnar shape, and is connected to the mother board by the plurality of external connection terminals 210.
  • the second resin layer 240 is omitted on the second main surface 202 side of the mounting substrate 200, and the mother is formed by a plurality of external connection terminals 215 formed in a spherical shape. It may be connected to a board.
  • Each of the plurality of external connection terminals 215 is, for example, a ball bump formed in a spherical shape.
  • the material of the ball bump is, for example, gold, copper, solder or the like.
  • One of the plurality of external connection terminals 215, the external connection terminal 215, is electrically connected to the antenna terminal T1.
  • the power amplifier module 100 may include a plurality of external connection terminals 210 and a plurality of external connection terminals 215.
  • one of the plurality of external connection terminals 210 may be electrically connected to the antenna terminal T1
  • one of the plurality of external connection terminals 215, the external connection terminal 215, may be the antenna terminal T1. May be electrically connected to.
  • the power amplifier module 100 is configured to include a mounting board 200 in which components are arranged on both the first main surface 201 and the second main surface 202 facing each other in the thickness direction D1. Not limited to.
  • the mounting board 200 a single-sided mounting board on which components are mounted on one of the first main surface 201 and the second main surface 202, for example, the first main surface 201 may be used.
  • the power amplifier module 100 is configured to include the third inductor 614, but is not limited to this configuration.
  • the third inductor 614 is not an essential component. That is, the power amplifier module 100 may be configured not to include the third inductor 614.
  • the first inductor 612 of the power amplifier module 100 is connected to the ground without a switch, but is not limited to this configuration.
  • the first inductor 612 may be connected to the ground via a switch.
  • each of the three or more inductors When viewed in a plan view from the thickness direction D1 of the mounting board 200, three or more inductors may be arranged so as to overlap each other. In this case, each of the three or more inductors is connected between the capacitor 611 and ground. Each of the three or more inductors is connected to ground with or without a switch.
  • the first attenuation circuit 61 has a configuration including the first inductor 612 and the second inductor 613, but the configuration is not limited to this.
  • the second attenuation circuit 62 may include a first inductor 612 and a second inductor 613. Further, at least one of the third attenuation circuit 63 and the fourth attenuation circuit 64 may include the first inductor 612 and the second inductor 613.
  • Both the first attenuation circuit 61 and the second attenuation circuit 62 may include the first inductor 612 and the second inductor 613.
  • at least two of the first attenuation circuit 61, the second attenuation circuit 62, the third attenuation circuit 63, and the fourth attenuation circuit 64 may include the first inductor 612 and the second inductor 613. ..
  • the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 are configured as one chip, but the configuration is not limited to this. It is not essential that the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 are integrated into one chip.
  • the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 may be individually arranged (mounted) on the second main surface 202. Alternatively, two components of the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 may be integrated into one chip.
  • the power amplifier module (100) of the first aspect is an attenuation that attenuates the harmonics of the signals output from the mounting board (200), the power amplifier (80), and the power amplifier (80).
  • a circuit for example, a first attenuation circuit 61 is provided.
  • the attenuation circuit includes a plurality of inductors (first inductor 612, second inductor 613) which are inner-layered on the mounting board (200) and connected to the output terminal (81) of the power amplifier (80).
  • the plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction (D1) of the mounting substrate (200).
  • the layout area of the power amplifier module (100) (mounting board 200) can be reduced. Therefore, the power amplifier module (100) can be miniaturized.
  • the winding directions of the plurality of inductors are the same with the thickness direction (D1) as the winding axis.
  • the power amplifier module (100) of the third aspect includes an output matching circuit (60) including an attenuation circuit in the first or second aspect.
  • the output matching circuit (60) matches the impedance between the power amplifier (80) and the external circuit (for example, the band changeover switch 41) connected to the output side of the output matching circuit (60).
  • the output matching circuit (60) can be downsized.
  • the power amplifier module (100) of the fourth aspect further includes a switch circuit (first switch 40) in any one of the first to third aspects.
  • the switch circuit includes a switch (for example, a first changeover switch 45) connected to one of a plurality of inductors.
  • the inductance component can be adjusted by using a switch. For example, when the switch is turned on, an inductance component is generated in the inductor connected to the switch, and the total inductance component can be reduced by the inductance components generated in other inductors.
  • the mounting substrate (200) has a first main surface (201) and a second main surface (202) facing each other.
  • the power amplifier (80) is provided on the first main surface (201), and the switch circuit is provided on the second main surface (202).
  • the switch circuit is provided on the second main surface (202).
  • the path length between the above one inductor and the switch can be shortened.
  • the switch circuit further includes a changeover switch (for example, a band changeover switch 41) for switching the frequency band used for communication.
  • a changeover switch for example, a band changeover switch 41
  • the one inductor is arranged closest to the second main surface (202) among the plurality of inductors.
  • the path length between the above one inductor and the switch can be shortened.
  • the plurality of inductors when viewed in a plan view from the thickness direction (D1) of the mounting substrate (200), the plurality of inductors have power. It is arranged so as not to overlap with the amplifier (80).
  • the communication device (500) of the ninth aspect is a signal processing circuit (3) that processes a high frequency signal passing through the power amplifier module (100) of any one of the first to eighth aspects and the power amplifier module (100). And.
  • the power amplifier module (100) can be miniaturized.

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  • Engineering & Computer Science (AREA)
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Abstract

Provided are a power amplifier module and a communication device having reduced size. A power amplifier module (100) comprises a mounting substrate (200), a power amplifier (80), and an attenuating circuit (such as a first attenuating circuit 61) for attenuating harmonics of a signal output from the power amplifier (80). The attenuating circuit comprises a plurality of inductors (a first inductor 612, a second inductor 613) which are stacked inside the mounting substrate (200) and are connected to an output terminal (81) of the power amplifier (80). The plurality of inductors are disposed so as to overlap when the mounting substrate (200) is viewed in plan from a thickness direction (D1).

Description

パワーアンプモジュール及び通信装置Power amplifier module and communication device
　本発明は、一般にパワーアンプモジュール及び通信装置に関し、より詳細にはインピーダンス整合を行う回路を備えるパワーアンプモジュール及び通信装置に関する。 The present invention generally relates to a power amplifier module and a communication device, and more particularly to a power amplifier module and a communication device including a circuit for performing impedance matching.
　従来、インピーダンス整合を行う回路を備える高周波モジュールが知られている（特許文献１参照）。 Conventionally, a high frequency module including a circuit for impedance matching is known (see Patent Document 1).
　特許文献１では、電力増幅器（パワーアンプ）の出力端子と、インピーダンス整合を行う送信出力整合回路（出力整合回路）とが、接続されている。また、送信出力整合回路は、送信フィルタに接続されている。これにより、送信出力整合回路は、電力増幅器と送信フィルタとのインピーダンス整合をとる。 In Patent Document 1, an output terminal of a power amplifier (power amplifier) and a transmission output matching circuit (output matching circuit) that performs impedance matching are connected. Further, the transmission output matching circuit is connected to the transmission filter. As a result, the transmission output matching circuit performs impedance matching between the power amplifier and the transmission filter.
特開２０２０－２７９７５号公報Japanese Unexamined Patent Publication No. 2020-27775
　ところで、少なくとも出力整合回路とパワーアンプとを有するモジュール（パワーアンプモジュール）の小型化が望まれている。 By the way, it is desired to reduce the size of a module (power amplifier module) having at least an output matching circuit and a power amplifier.
　本発明は上記課題に鑑みてなされ、小型化を図ることができるパワーアンプモジュール及び通信装置を提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a power amplifier module and a communication device that can be miniaturized.
　本発明の一態様に係るパワーアンプモジュールは、実装基板と、パワーアンプと、前記パワーアンプから出力された信号の高調波を減衰させる減衰用回路と、を備える。前記減衰用回路は、前記実装基板に内層され、前記パワーアンプの出力端子に接続される複数のインダクタを含む。前記複数のインダクタは、前記実装基板の厚さ方向から平面視した場合に重なるように配置されている。 The power amplifier module according to one aspect of the present invention includes a mounting board, a power amplifier, and an attenuation circuit for attenuating the harmonics of the signal output from the power amplifier. The attenuation circuit includes a plurality of inductors that are inner-layered on the mounting board and connected to the output terminals of the power amplifier. The plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction of the mounting substrate.
　本発明の一態様に係る通信装置は、前記パワーアンプモジュールと、前記パワーアンプモジュールを通る高周波信号を処理する信号処理回路と、を備える。 The communication device according to one aspect of the present invention includes the power amplifier module and a signal processing circuit for processing a high frequency signal passing through the power amplifier module.
　本発明によると、小型化を図ることができる。 According to the present invention, miniaturization can be achieved.
図１は、一実施形態に係るパワーアンプモジュールを備える高周波モジュール及び通信装置の構成を説明する回路図である。FIG. 1 is a circuit diagram illustrating a configuration of a high frequency module and a communication device including a power amplifier module according to an embodiment. 図２は、同上のパワーアンプモジュールの構成を説明する回路図である。FIG. 2 is a circuit diagram illustrating the configuration of the power amplifier module of the same. 図３は、同上のパワーアンプモジュールを透視した平面図である。FIG. 3 is a perspective view of the power amplifier module of the above. 図４は、同上のパワーアンプモジュールを一部透視した、図３のＸ１－Ｘ１の断面図である。FIG. 4 is a cross-sectional view of X1-X1 of FIG. 3 in which a part of the power amplifier module of the same is seen through. 図５は、同上のパワーアンプモジュールの一部を透視した斜視図である。FIG. 5 is a perspective view of a part of the power amplifier module of the same as above. 図６は、変形例１に係るパワーアンプモジュールを一部透視した断面図である。FIG. 6 is a cross-sectional view showing a part of the power amplifier module according to the first modification.
　以下の実施形態等において参照する図１～図６は、いずれも模式的な図であり、図中の各構成要素の大きさや厚さそれぞれの比が、必ずしも実際の寸法比を反映しているとは限らない。 FIGS. 1 to 6 referred to in the following embodiments and the like are schematic views, and the ratio of the size and the thickness of each component in the figure does not necessarily reflect the actual dimensional ratio. Not necessarily.
　（実施形態）
　以下、本実施形態に係る高周波モジュール１、パワーアンプモジュール１００及び通信装置５００について、図１～図５を用いて説明する。 (Embodiment)
Hereinafter, the high frequency module 1, the power amplifier module 100, and the communication device 500 according to the present embodiment will be described with reference to FIGS. 1 to 5.
　（１）概要
　本実施形態に係る高周波モジュール１は、パワーアンプモジュール１００を備え、例えば、マルチモード／マルチバンド対応の通信装置５００に用いられる。通信装置５００は、例えば、携帯電話（例えば、スマートフォン）であるが、これに限らず、例えば、ウェアラブル端末（例えば、スマートウォッチ）等であってもよい。高周波モジュール１は、例えば、４Ｇ（第４世代移動通信）規格、５Ｇ（第５世代移動通信）規格等に対応可能なモジュールである。４Ｇ規格は、例えば、３ＧＰＰ　ＬＴＥ（ＬＴＥ：Long Term Evolution）規格である。５Ｇ規格は、例えば、５Ｇ　ＮＲ（New Radio）である。高周波モジュール１は、キャリアアグリゲーション（Carrier Aggregation）及びデュアルコネクティビティ（Dual connectivity）に対応可能なモジュールである。 (1) Outline The high frequency module 1 according to the present embodiment includes a power amplifier module 100, and is used, for example, in a communication device 500 compatible with multimode / multiband. The communication device 500 is, for example, a mobile phone (for example, a smartphone), but is not limited to this, and may be, for example, a wearable terminal (for example, a smart watch) or the like. The high frequency module 1 is a module capable of supporting, for example, a 4G (4th generation mobile communication) standard, a 5G (5th generation mobile communication) standard, and the like. The 4G standard is, for example, a 3GPP LTE (LTE: Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high frequency module 1 is a module capable of supporting carrier aggregation and dual connectivity.
　高周波モジュール１は、例えば、信号処理回路３から入力された送信信号（高周波信号）を増幅してアンテナ４に出力するように構成されている。また、高周波モジュール１は、アンテナ４から入力された受信信号（高周波信号）を増幅して信号処理回路３に出力するように構成されている。信号処理回路３は、高周波モジュール１の構成要素ではなく、高周波モジュール１を備える通信装置５００の構成要素である。実施形態に係る高周波モジュール１は、例えば、通信装置５００が備える信号処理回路３によって制御される。通信装置５００は、高周波モジュール１と、信号処理回路３と、を備える。通信装置５００は、アンテナ４を更に備える。信号処理回路３は、アンテナ４を介して受信した信号（受信信号）、及びアンテナ４を介して送信する信号（送信信号）を処理する。 The high frequency module 1 is configured to, for example, amplify the transmission signal (high frequency signal) input from the signal processing circuit 3 and output it to the antenna 4. Further, the high frequency module 1 is configured to amplify the received signal (high frequency signal) input from the antenna 4 and output it to the signal processing circuit 3. The signal processing circuit 3 is not a component of the high frequency module 1, but a component of the communication device 500 including the high frequency module 1. The high frequency module 1 according to the embodiment is controlled by, for example, a signal processing circuit 3 included in the communication device 500. The communication device 500 includes a high frequency module 1 and a signal processing circuit 3. The communication device 500 further includes an antenna 4. The signal processing circuit 3 processes a signal received via the antenna 4 (received signal) and a signal transmitted via the antenna 4 (transmitted signal).
　（２）高周波モジュールの各構成要素
　以下、本実施形態に係る高周波モジュール１の各構成要素について、図面を参照して説明する。 (2) Each component of the high frequency module Hereinafter, each component of the high frequency module 1 according to the present embodiment will be described with reference to the drawings.
　本実施形態に係る高周波モジュール１は、図１及び図４に示すように、実装基板２００と、アンテナ端子Ｔ１と、アンテナスイッチ１０と、整合回路２０と、フィルタ群３０と、第１スイッチ４０と、第２スイッチ５０と、出力整合回路６０と、入力整合回路７０と、パワーアンプ８０と、ローノイズアンプ９０と、を備える。ここで、パワーアンプモジュール１００は、第１スイッチ４０と、出力整合回路６０と、パワーアンプ８０と、を含む。要するに、高周波モジュール１は、実装基板２００と、アンテナ端子Ｔ１と、アンテナスイッチ１０と、整合回路２０と、フィルタ群３０と、パワーアンプモジュール１００と、入力整合回路７０と、ローノイズアンプ９０と、を備える。高周波モジュール１は、複数の外部接続端子２１０を、更に備える（図４参照）。 As shown in FIGS. 1 and 4, the high-frequency module 1 according to the present embodiment includes a mounting board 200, an antenna terminal T1, an antenna switch 10, a matching circuit 20, a filter group 30, and a first switch 40. A second switch 50, an output matching circuit 60, an input matching circuit 70, a power amplifier 80, and a low noise amplifier 90 are provided. Here, the power amplifier module 100 includes a first switch 40, an output matching circuit 60, and a power amplifier 80. In short, the high frequency module 1 includes a mounting board 200, an antenna terminal T1, an antenna switch 10, a matching circuit 20, a filter group 30, a power amplifier module 100, an input matching circuit 70, and a low noise amplifier 90. Be prepared. The high frequency module 1 further includes a plurality of external connection terminals 210 (see FIG. 4).
　アンテナ端子Ｔ１は、図１に示すように、アンテナ４に電気的に接続されている。 As shown in FIG. 1, the antenna terminal T1 is electrically connected to the antenna 4.
　アンテナスイッチ１０は、アンテナ４に接続される信号経路として、複数の通信バンドの信号経路のうち少なくとも１つの通信バンドの信号経路を選択可能なスイッチである。アンテナスイッチ１０は、図１に示すように、共通端子１１と、複数（図示例では４つ）の選択端子１２～１５と、を有する。共通端子１１は、アンテナ端子Ｔ１と電気的に接続されている。選択端子１２は、フィルタ群３０に含まれるフィルタ３１に電気的に接続されている。選択端子１３は、フィルタ群３０に含まれるフィルタ３２に電気的に接続されている。選択端子１４は、フィルタ群３０に含まれるフィルタ３３に電気的に接続されている。選択端子１５は、フィルタ群３０に含まれるフィルタ３４に電気的に接続されている。 The antenna switch 10 is a switch capable of selecting a signal path of at least one communication band among the signal paths of a plurality of communication bands as a signal path connected to the antenna 4. As shown in FIG. 1, the antenna switch 10 has a common terminal 11 and a plurality of (four in the illustrated example) selection terminals 12 to 15. The common terminal 11 is electrically connected to the antenna terminal T1. The selection terminal 12 is electrically connected to the filter 31 included in the filter group 30. The selection terminal 13 is electrically connected to the filter 32 included in the filter group 30. The selection terminal 14 is electrically connected to the filter 33 included in the filter group 30. The selection terminal 15 is electrically connected to the filter 34 included in the filter group 30.
　アンテナスイッチ１０は、複数の選択端子１２～１５の少なくとも１つを共通端子１１の接続先として選択可能なスイッチである。つまり、アンテナスイッチ１０は、フィルタ３１、フィルタ３２、フィルタ３３及びフィルタ３４とアンテナ４とを選択的に接続可能なスイッチである。 The antenna switch 10 is a switch capable of selecting at least one of a plurality of selection terminals 12 to 15 as a connection destination of the common terminal 11. That is, the antenna switch 10 is a switch capable of selectively connecting the filter 31, the filter 32, the filter 33, the filter 34, and the antenna 4.
　アンテナスイッチ１０は、例えば、信号処理回路３によって制御される。アンテナスイッチ１０は、信号処理回路３のＲＦ信号処理回路５からの制御信号にしたがって、選択端子１２、選択端子１３及び選択端子１４のうち少なくとも１つと共通端子１１と、を電気的に接続する。 The antenna switch 10 is controlled by, for example, the signal processing circuit 3. The antenna switch 10 electrically connects at least one of the selection terminal 12, the selection terminal 13, and the selection terminal 14 and the common terminal 11 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
　整合回路２０は、例えば、複数（図示例では４つ）のチップインダクタ２１～２４を有する（図１参照）。チップインダクタ２１～２４のそれぞれは、アンテナスイッチ１０とフィルタ群３０とのインピーダンス整合を取る回路素子である。チップインダクタ２１～２４のそれぞれは、一端がアンテナスイッチ１０とフィルタ群３０のフィルタ３１～３４とを接続する経路に接続され、他端が基準端子（グランド）に接続されている。なお、整合回路２０では、チップインダクタ２１～２４が、上記経路とグランドとの間に接続されている替わりに、上記経路に直列接続されていてもよい。さらに、整合回路２０は、チップインダクタ２１～２４に限らず、キャパシタ、又はインダクタとキャパシタとを組み合わせた回路であってもよい。 The matching circuit 20 has, for example, a plurality of (four in the illustrated example) chip inductors 21 to 24 (see FIG. 1). Each of the chip inductors 21 to 24 is a circuit element that performs impedance matching between the antenna switch 10 and the filter group 30. One end of each of the chip inductors 21 to 24 is connected to a path connecting the antenna switch 10 and the filters 31 to 34 of the filter group 30, and the other end is connected to a reference terminal (ground). In the matching circuit 20, the chip inductors 21 to 24 may be connected in series to the path instead of being connected between the path and the ground. Further, the matching circuit 20 is not limited to the chip inductors 21 to 24, and may be a capacitor or a circuit in which an inductor and a capacitor are combined.
　フィルタ群３０は、複数のフィルタ３１～３４を有する（図１参照）。複数のフィルタ３１～３４は、例えば、弾性波フィルタであり、複数の直列腕共振子及び複数の並列腕共振子の各々が弾性波共振子により構成されている。弾性波フィルタは、例えば、弾性表面波を利用するＳＡＷ（Surface Acoustic Wave）フィルタである。フィルタ３１～３４は、デュプレクサである。例えば、フィルタ３１は、フィルタ３１ａ及びフィルタ３１ｂを含む。フィルタ３２は、フィルタ３２ａ及びフィルタ３２ｂを含む。フィルタ３３は、フィルタ３３ａ及びフィルタ３３ｂを含む。フィルタ３４は、フィルタ３４ａ及びフィルタ３４ｂを含む。フィルタ３１ａ，３２ａ，３３ａ，３４ａは、送信信号を通過させる送信用のフィルタである。フィルタ３１ｂ，３２ｂ，３３ｂ，３４ｂは、受信信号を通過させる受信用のフィルタである。フィルタ３１ａは、例えば４Ｇ規格でのＢａｎｄ７１の送信信号を通過させる。フィルタ３２ａは、例えば４Ｇ規格でのＢａｎｄ１３の送信信号を通過させる。フィルタ３３ａは、例えば４Ｇ規格でのＢａｎｄ２０の送信信号を通過させる。フィルタ３４ａは、例えば４Ｇ規格でのＢａｎｄ８の送信信号を通過させる。フィルタ３１ｂは、例えば４Ｇ規格でのＢａｎｄ７１の受信信号を通過させる。フィルタ３２ｂは、例えば４Ｇ規格でのＢａｎｄ１３の受信信号を通過させる。フィルタ３３ｂは、例えば４Ｇ規格でのＢａｎｄ２０の受信信号を通過させる。フィルタ３４ｂは、例えば４Ｇ規格でのＢａｎｄ８の受信信号を通過させる。 The filter group 30 has a plurality of filters 31 to 34 (see FIG. 1). The plurality of filters 31 to 34 are, for example, elastic wave filters, and each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators. The surface acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves. Filters 31-34 are duplexers. For example, the filter 31 includes a filter 31a and a filter 31b. The filter 32 includes a filter 32a and a filter 32b. The filter 33 includes a filter 33a and a filter 33b. The filter 34 includes a filter 34a and a filter 34b. The filters 31a, 32a, 33a, 34a are transmission filters for passing a transmission signal. The filters 31b, 32b, 33b, 34b are reception filters for passing a reception signal. The filter 31a passes the transmission signal of the Band 71 in the 4G standard, for example. The filter 32a passes, for example, the transmission signal of Band 13 in the 4G standard. The filter 33a passes, for example, the transmission signal of Band 20 in the 4G standard. The filter 34a passes, for example, a Band 8 transmission signal in the 4G standard. The filter 31b passes the received signal of the Band 71 in the 4G standard, for example. The filter 32b passes the received signal of Band 13 in the 4G standard, for example. The filter 33b passes the received signal of the Band 20 in the 4G standard, for example. The filter 34b passes the received signal of Band 8 in the 4G standard, for example.
　フィルタ３１～３４のそれぞれは、アンテナスイッチ１０の複数の選択端子に一対一に接続されている。フィルタ３１～３４のそれぞれは、第１スイッチ４０のバンド切替スイッチ４１の複数（図示例では３つ）の選択端子４３ａ～４３ｄに一対一に電気的に接続されている。具体的には、フィルタ３１ａは選択端子４３ａに、フィルタ３２ａは選択端子４３ｂに、フィルタ３３ａは選択端子４３ｃに、フィルタ３４ａは選択端子４３ｄに、それぞれ電気的に接続されている。 Each of the filters 31 to 34 is connected one-to-one to a plurality of selection terminals of the antenna switch 10. Each of the filters 31 to 34 is electrically connected one-to-one to a plurality of (three in the illustrated example) selection terminals 43a to 43d of the band changeover switch 41 of the first switch 40. Specifically, the filter 31a is electrically connected to the selection terminal 43a, the filter 32a is electrically connected to the selection terminal 43b, the filter 33a is electrically connected to the selection terminal 43c, and the filter 34a is electrically connected to the selection terminal 43d.
　フィルタ３１～３４のそれぞれは、第２スイッチ５０の複数（図示例では４つ）の選択端子５２ａ～５２ｄに一対一に接続されている。具体的には、フィルタ３１ｂは選択端子５２ａに、フィルタ３２ｂは選択端子５２ｂに、フィルタ３３ｂは選択端子５２ｃに、フィルタ３４ｂは選択端子５２ｄに、それぞれ電気的に接続されている。 Each of the filters 31 to 34 is connected one-to-one to a plurality of (four in the illustrated example) selection terminals 52a to 52d of the second switch 50. Specifically, the filter 31b is electrically connected to the selection terminal 52a, the filter 32b is electrically connected to the selection terminal 52b, the filter 33b is electrically connected to the selection terminal 52c, and the filter 34b is electrically connected to the selection terminal 52d.
　第２スイッチ５０は、共通端子５１と、複数（図示例では、４つ）の選択端子５２ａ～５２ｄと、を有する。第２スイッチ５０は、共通端子５１と選択端子５２ａ～５２ｄとの接続状態を切り替えるスイッチである。共通端子５１は、ローノイズアンプ９０と電気的に接続されている。具体的には、共通端子５１は、入力整合回路７０を介して、ローノイズアンプ９０と接続されている。複数の選択端子５２ａ～５２ｄは、複数のフィルタ３１～３４に一対一に接続されている。本実施形態では、選択端子５２ａはフィルタ３１ｂに、選択端子５２ｂはフィルタ３２ｂに、選択端子５２ｃはフィルタ３３ｂに、選択端子５２ｄはフィルタ３４ｂに、それぞれ接続されている。第２スイッチ５０は、信号処理回路３のＲＦ信号処理回路５からの制御信号にしたがって、選択端子５２ａ～５２ｄのいずれか１つと共通端子５１と、を電気的に接続する。 The second switch 50 has a common terminal 51 and a plurality of (four in the illustrated example) selection terminals 52a to 52d. The second switch 50 is a switch that switches the connection state between the common terminal 51 and the selection terminals 52a to 52d. The common terminal 51 is electrically connected to the low noise amplifier 90. Specifically, the common terminal 51 is connected to the low noise amplifier 90 via the input matching circuit 70. The plurality of selection terminals 52a to 52d are connected one-to-one to the plurality of filters 31 to 34. In the present embodiment, the selection terminal 52a is connected to the filter 31b, the selection terminal 52b is connected to the filter 32b, the selection terminal 52c is connected to the filter 33b, and the selection terminal 52d is connected to the filter 34b. The second switch 50 electrically connects any one of the selection terminals 52a to 52d and the common terminal 51 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
　入力整合回路７０は、第２スイッチ５０とローノイズアンプ９０とのインピーダンス整合を取る回路素子である。 The input matching circuit 70 is a circuit element that performs impedance matching between the second switch 50 and the low noise amplifier 90.
　ローノイズアンプ９０は、アンテナ４が受信した信号（受信信号）を増幅する。ローノイズアンプ９０の入力端子９１は、入力整合回路７０に電気的に接続されている。ローノイズアンプ９０の出力端子９２は、信号処理回路３に接続されている。ローノイズアンプ９０は、フィルタ３１ｂ～３４ｂのいずれかのフィルタ及び入力整合回路７０を通過した信号（受信信号）を増幅する。ローノイズアンプ９０は、増幅した受信信号を信号処理回路３に出力する。 The low noise amplifier 90 amplifies the signal (received signal) received by the antenna 4. The input terminal 91 of the low noise amplifier 90 is electrically connected to the input matching circuit 70. The output terminal 92 of the low noise amplifier 90 is connected to the signal processing circuit 3. The low noise amplifier 90 amplifies a signal (received signal) that has passed through any of the filters 31b to 34b and the input matching circuit 70. The low noise amplifier 90 outputs the amplified received signal to the signal processing circuit 3.
　以下、パワーアンプモジュール１００の構成について説明する。 Hereinafter, the configuration of the power amplifier module 100 will be described.
　パワーアンプモジュール１００は、上述したように、第１スイッチ４０と、出力整合回路６０と、パワーアンプ８０と、を含む（図１参照）。 As described above, the power amplifier module 100 includes a first switch 40, an output matching circuit 60, and a power amplifier 80 (see FIG. 1).
　第１スイッチ４０は、例えばスイッチＩＣ（Integrated Circuit）である。第１スイッチ４０は、図１に示すように、バンド切替スイッチ４１と、第１切替スイッチ４５と、第２切替スイッチ４６と、を含んでいる。 The first switch 40 is, for example, a switch IC (Integrated Circuit). As shown in FIG. 1, the first switch 40 includes a band changeover switch 41, a first changeover switch 45, and a second changeover switch 46.
　バンド切替スイッチ４１は、信号の送信に用いるバンドを切り替えるためのスイッチである。バンド切替スイッチ４１は、図１に示すように、共通端子４２と、複数（図示例では４つ）の選択端子４３ａ～４３ｄと、を有する。共通端子４２は、出力整合回路６０と電気的に接続されている。選択端子４３ａは、フィルタ３１ａに電気的に接続されている。選択端子４３ｂは、フィルタ３２ａに電気的に接続されている。選択端子４３ｃは、フィルタ３３ａに電気的に接続されている。選択端子４３ｄは、フィルタ３４ａに電気的に接続されている。 The band changeover switch 41 is a switch for switching the band used for signal transmission. As shown in FIG. 1, the band changeover switch 41 has a common terminal 42 and a plurality of (four in the illustrated example) selection terminals 43a to 43d. The common terminal 42 is electrically connected to the output matching circuit 60. The selection terminal 43a is electrically connected to the filter 31a. The selection terminal 43b is electrically connected to the filter 32a. The selection terminal 43c is electrically connected to the filter 33a. The selection terminal 43d is electrically connected to the filter 34a.
　バンド切替スイッチ４１は、複数の選択端子４３ａ～４３ｄの少なくとも１つを共通端子４２の接続先として選択可能なスイッチである。つまり、バンド切替スイッチ４１は、フィルタ３１、フィルタ３２、フィルタ３３及びフィルタ３４と出力整合回路６０とを選択的に接続可能なスイッチである。 The band changeover switch 41 is a switch that can select at least one of a plurality of selection terminals 43a to 43d as a connection destination of the common terminal 42. That is, the band changeover switch 41 is a switch capable of selectively connecting the filter 31, the filter 32, the filter 33, the filter 34, and the output matching circuit 60.
　バンド切替スイッチ４１は、例えば、信号処理回路３によって制御される。バンド切替スイッチ４１は、信号処理回路３のＲＦ信号処理回路５からの制御信号にしたがって、選択端子４３ａ～４３ｄのうち少なくとも１つと共通端子４２と、を電気的に接続する。 The band changeover switch 41 is controlled by, for example, the signal processing circuit 3. The band changeover switch 41 electrically connects at least one of the selection terminals 43a to 43d and the common terminal 42 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
　第１切替スイッチ４５は、後述する第２インダクタ６１３（図２参照）とグランドとの間に設けられている。第１切替スイッチ４５は、第１端子４５１と第２端子４５２とを含んでいる。第１端子４５１は、第２インダクタ６１３に電気的に接続されている。第２端子４５２は、グランドに電気的に接続されている。第１切替スイッチ４５は、例えば、信号処理回路３によって制御される。第１切替スイッチ４５は、信号処理回路３のＲＦ信号処理回路５からの制御信号にしたがって、第１端子４５１と第２端子４５２との間を電気的に接続したり、非接続にしたりする。 The first changeover switch 45 is provided between the second inductor 613 (see FIG. 2), which will be described later, and the ground. The first changeover switch 45 includes a first terminal 451 and a second terminal 452. The first terminal 451 is electrically connected to the second inductor 613. The second terminal 452 is electrically connected to the ground. The first changeover switch 45 is controlled by, for example, the signal processing circuit 3. The first changeover switch 45 electrically connects or disconnects the first terminal 451 and the second terminal 452 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
　第２切替スイッチ４６は、後述する第３インダクタ６１４（図２参照）とグランドとの間に設けられている。第２切替スイッチ４６は、第１端子４６１と第２端子４６２とを含んでいる。第１端子４６１は、第３インダクタ６１４に電気的に接続されている。第２端子４６２は、グランドに電気的に接続されている。第２切替スイッチ４６は、例えば、信号処理回路３によって制御される。第２切替スイッチ４６は、信号処理回路３のＲＦ信号処理回路５からの制御信号にしたがって、第１端子４６１と第２端子４６２との間を電気的に接続したり、非接続にしたりする。 The second changeover switch 46 is provided between the third inductor 614 (see FIG. 2), which will be described later, and the ground. The second changeover switch 46 includes a first terminal 461 and a second terminal 462. The first terminal 461 is electrically connected to the third inductor 614. The second terminal 462 is electrically connected to the ground. The second changeover switch 46 is controlled by, for example, the signal processing circuit 3. The second changeover switch 46 electrically connects or disconnects the first terminal 461 and the second terminal 462 according to the control signal from the RF signal processing circuit 5 of the signal processing circuit 3.
　出力整合回路６０は、パワーアンプ８０と、出力整合回路６０の出力側と接続されている外部回路（ここでは、バンド切替スイッチ４１）との間のインピーダンスを整合させる回路素子である。なお、出力整合回路６０の詳細な構成については、後述する。 The output matching circuit 60 is a circuit element that matches the impedance between the power amplifier 80 and the external circuit (here, the band changeover switch 41) connected to the output side of the output matching circuit 60. The detailed configuration of the output matching circuit 60 will be described later.
　パワーアンプ８０は、アンテナ４から送信する信号（送信信号）を増幅する。パワーアンプ８０の入力端子８２は、信号処理回路３に接続されている。パワーアンプ８０の出力端子８１は、出力整合回路６０に接続されている。パワーアンプ８０は、信号処理回路３から出力された信号を増幅する。パワーアンプ８０は、増幅した送信信号を、出力整合回路６０を介してバンド切替スイッチ４１に出力する。 The power amplifier 80 amplifies the signal (transmitted signal) transmitted from the antenna 4. The input terminal 82 of the power amplifier 80 is connected to the signal processing circuit 3. The output terminal 81 of the power amplifier 80 is connected to the output matching circuit 60. The power amplifier 80 amplifies the signal output from the signal processing circuit 3. The power amplifier 80 outputs the amplified transmission signal to the band changeover switch 41 via the output matching circuit 60.
　出力整合回路６０は、図２に示すように、第１減衰用回路６１、第２減衰用回路６２、第３減衰用回路６３及び第４減衰用回路６４を含む。 As shown in FIG. 2, the output matching circuit 60 includes a first attenuation circuit 61, a second attenuation circuit 62, a third attenuation circuit 63, and a fourth attenuation circuit 64.
　第１減衰用回路６１は、送信信号の２倍波である高調波を減衰させる回路である。第１減衰用回路６１は、図２に示すように、キャパシタ６１１、第１インダクタ６１２、第２インダクタ６１３、第３インダクタ６１４及び第４インダクタ６１５を有している。 The first attenuation circuit 61 is a circuit that attenuates harmonics that are double waves of the transmission signal. As shown in FIG. 2, the first attenuation circuit 61 includes a capacitor 611, a first inductor 612, a second inductor 613, a third inductor 614, and a fourth inductor 615.
　第４インダクタ６１５は、パワーアンプモジュールにおけるパワーアンプ８０と第１スイッチ４０との間を接続する経路Ｒ６０（図３参照）に直列に挿入されている。具体的には、第４インダクタ６１５の第１端はパワーアンプ８０の出力端子８１と電気的に接続されている。第４インダクタ６１５の第２端は第２減衰用回路６２と電気的に接続されている。 The fourth inductor 615 is inserted in series with the path R60 (see FIG. 3) connecting the power amplifier 80 and the first switch 40 in the power amplifier module. Specifically, the first end of the fourth inductor 615 is electrically connected to the output terminal 81 of the power amplifier 80. The second end of the fourth inductor 615 is electrically connected to the second attenuation circuit 62.
　キャパシタ６１１は、第４インダクタ６１５の第２端とグランドとの間に設けられている。具体的には、キャパシタ６１１の第１端は、第４インダクタ６１５の第２端と電気的に接続されている。キャパシタ６１１の第２端は、第１インダクタ６１２、第２インダクタ６１３及び第３インダクタ６１４のそれぞれの第１端と電気的に接続されている。 The capacitor 611 is provided between the second end of the fourth inductor 615 and the ground. Specifically, the first end of the capacitor 611 is electrically connected to the second end of the fourth inductor 615. The second end of the capacitor 611 is electrically connected to the first end of each of the first inductor 612, the second inductor 613, and the third inductor 614.
　第１インダクタ６１２は、キャパシタ６１１の第２端とグランドとの間に設けられている。具体的には、第１インダクタ６１２の第１端は、キャパシタ６１１の第２端と電気的に接続されている。第１インダクタ６１２の第２端は、グランドに電気的に接続されている。 The first inductor 612 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the first inductor 612 is electrically connected to the second end of the capacitor 611. The second end of the first inductor 612 is electrically connected to ground.
　第２インダクタ６１３は、キャパシタ６１１の第２端とグランドとの間に設けられている。具体的には、第２インダクタ６１３の第１端は、キャパシタ６１１の第２端と電気的に接続されている。第２インダクタ６１３の第２端は、第１切替スイッチ４５の第１端子４５１に電気的に接続されている。第２インダクタ６１３は、第１切替スイッチ４５の第１端子４５１と第１切替スイッチ４５の第２端子４５２との間が接続されることで、グランドに接続される。 The second inductor 613 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the second inductor 613 is electrically connected to the second end of the capacitor 611. The second end of the second inductor 613 is electrically connected to the first terminal 451 of the first changeover switch 45. The second inductor 613 is connected to the ground by connecting between the first terminal 451 of the first changeover switch 45 and the second terminal 452 of the first changeover switch 45.
　第３インダクタ６１４は、キャパシタ６１１の第２端とグランドとの間に設けられている。具体的には、第３インダクタ６１４の第１端は、キャパシタ６１１の第２端と電気的に接続されている。第３インダクタ６１４の第２端は、第２切替スイッチ４６の第１端子４６１に電気的に接続されている。第３インダクタ６１４は、第２切替スイッチ４６の第１端子４６１と第２切替スイッチ４６の第２端子４６２との間が接続されることで、グランドに接続される。 The third inductor 614 is provided between the second end of the capacitor 611 and the ground. Specifically, the first end of the third inductor 614 is electrically connected to the second end of the capacitor 611. The second end of the third inductor 614 is electrically connected to the first terminal 461 of the second changeover switch 46. The third inductor 614 is connected to the ground by being connected between the first terminal 461 of the second changeover switch 46 and the second terminal 462 of the second changeover switch 46.
　第１インダクタ６１２、第２インダクタ６１３及び第３インダクタ６１４は、第４インダクタ６１５と電気的に接続されている。すなわち、第１インダクタ６１２、第２インダクタ６１３及び第３インダクタ６１４は、パワーアンプ８０の出力端子８１と電気的に接続されている。 The first inductor 612, the second inductor 613, and the third inductor 614 are electrically connected to the fourth inductor 615. That is, the first inductor 612, the second inductor 613, and the third inductor 614 are electrically connected to the output terminal 81 of the power amplifier 80.
　ここで、第１インダクタ６１２のインダクタンス値は、第２インダクタ６１３のインダクタンス値及び第３インダクタ６１４のインダクタンス値よりも小さい。第２インダクタ６１３のインダクタンス値は、第１インダクタ６１２のインダクタンス値及び第３インダクタ６１４のインダクタンス値よりも大きい。つまり、第１インダクタ６１２、第２インダクタ６１３及び第３インダクタ６１４のうち、第１インダクタ６１２のインダクタンス値が最も小さく、次に第３インダクタ６１４のインダクタンス値が小さく、第２インダクタ６１３のインダクタンス値が最も大きい。すなわち、不等式“第１インダクタ６１２のインダクタンス値＜第３インダクタ６１４のインダクタンス値＜第２インダクタ６１３のインダクタンス値”が成立している。 Here, the inductance value of the first inductor 612 is smaller than the inductance value of the second inductor 613 and the inductance value of the third inductor 614. The inductance value of the second inductor 613 is larger than the inductance value of the first inductor 612 and the inductance value of the third inductor 614. That is, among the first inductor 612, the second inductor 613, and the third inductor 614, the inductance value of the first inductor 612 is the smallest, then the inductance value of the third inductor 614 is the smallest, and the inductance value of the second inductor 613 is. The largest. That is, the inequality "inductance value of the first inductor 612 <inductance value of the third inductor 614 <inductance value of the second inductor 613" is established.
　第１切替スイッチ４５及び第２切替スイッチ４６のそれぞれの開状態、閉状態が切り替えられることで、第１インダクタ６１２、第２インダクタ６１３及び第３インダクタ６１４のうちグランドに接続されるインダクタが選択される。すなわち、第１切替スイッチ４５及び第２切替スイッチ４６のそれぞれの開状態、閉状態が切り替えられることで、グランドに接続されるインダクタのインダクタンス値を変更することが可能になる。 By switching the open state and closed state of the first changeover switch 45 and the second changeover switch 46, the inductor connected to the ground is selected from the first inductor 612, the second inductor 613, and the third inductor 614. NS. That is, the inductance value of the inductor connected to the ground can be changed by switching the open state and the closed state of the first changeover switch 45 and the second changeover switch 46, respectively.
　なお、第１インダクタ６１２、第２インダクタ６１３及び第３インダクタ６１４の配置に係る構造については、後述する。 The structure related to the arrangement of the first inductor 612, the second inductor 613, and the third inductor 614 will be described later.
　第２減衰用回路６２は、送信信号の３倍波である高調波を減衰させる回路である。第２減衰用回路６２は、図２に示すように、インダクタ６２１及びキャパシタ６２２を有している。 The second attenuation circuit 62 is a circuit that attenuates harmonics that are the third harmonic of the transmitted signal. The second attenuation circuit 62 has an inductor 621 and a capacitor 622, as shown in FIG.
　インダクタ６２１は、経路Ｒ６０（図３参照）に直列に挿入されている。具体的には、インダクタ６２１の第１端は、第１減衰用回路６１の第４インダクタ６１５の第２端と電気的に接続されている。インダクタ６２１の第２端は第３減衰用回路６３と電気的に接続されている。キャパシタ６２２は、インダクタ６２１の第２端とグランドとの間に設けられている。具体的には、キャパシタ６２２の第１端は、インダクタ６２１の第２端と電気的に接続されている。キャパシタ６２２の第２端は、グランドに電気的に接続されている。 The inductor 621 is inserted in series with the path R60 (see FIG. 3). Specifically, the first end of the inductor 621 is electrically connected to the second end of the fourth inductor 615 of the first attenuation circuit 61. The second end of the inductor 621 is electrically connected to the third attenuation circuit 63. The capacitor 622 is provided between the second end of the inductor 621 and the ground. Specifically, the first end of the capacitor 622 is electrically connected to the second end of the inductor 621. The second end of capacitor 622 is electrically connected to ground.
　第３減衰用回路６３は、所定の周波数帯域（第１周波数帯域）よりも高周波数側の信号を通過させる回路である。すなわち、第３減衰用回路６３は、第１周波数帯域よりも低周波数側の信号を減衰させる回路である。第３減衰用回路６３は、図２に示すように、キャパシタ６３１及びインダクタ６３２を有している。 The third attenuation circuit 63 is a circuit that passes a signal on the higher frequency side than the predetermined frequency band (first frequency band). That is, the third attenuation circuit 63 is a circuit that attenuates a signal on the frequency side lower than the first frequency band. As shown in FIG. 2, the third attenuation circuit 63 includes a capacitor 631 and an inductor 632.
　キャパシタ６３１は、経路Ｒ６０（図３参照）に直列に挿入されている。具体的には、キャパシタ６３１の第１端は、第２減衰用回路６２のインダクタ６２１の第２端と電気的に接続されている。キャパシタ６３１の第２端は第４減衰用回路６４と電気的に接続されている。インダクタ６３２は、キャパシタ６３１の第２端とグランドとの間に設けられている。具体的には、インダクタ６３２の第１端は、キャパシタ６３１の第２端と電気的に接続されている。インダクタ６３２の第２端は、グランドに電気的に接続されている。 Capacitor 631 is inserted in series with path R60 (see FIG. 3). Specifically, the first end of the capacitor 631 is electrically connected to the second end of the inductor 621 of the second attenuation circuit 62. The second end of the capacitor 631 is electrically connected to the fourth attenuation circuit 64. The inductor 632 is provided between the second end of the capacitor 631 and the ground. Specifically, the first end of the inductor 632 is electrically connected to the second end of the capacitor 631. The second end of the inductor 632 is electrically connected to ground.
　第４減衰用回路６４は、所定の周波数帯域（第２周波数帯域）よりも低周波数側の信号を通過させる回路である。すなわち、第４減衰用回路６４は、第２周波数帯域よりも高周波数側の信号を減衰させる回路である。第４減衰用回路６４は、図２に示すように、インダクタ６４１及びキャパシタ６４２を有している。 The fourth attenuation circuit 64 is a circuit that passes a signal on the lower frequency side than the predetermined frequency band (second frequency band). That is, the fourth attenuation circuit 64 is a circuit that attenuates a signal on the higher frequency side than the second frequency band. As shown in FIG. 2, the fourth attenuation circuit 64 has an inductor 641 and a capacitor 642.
　インダクタ６４１は、経路Ｒ６０（図３参照）に直列に挿入されている。具体的には、インダクタ６４１の第１端は、第３減衰用回路６３のキャパシタ６３１の第２端と電気的に接続されている。インダクタ６４１の第２端は、第１スイッチ４０のバンド切替スイッチ４１と電気的に接続されている。キャパシタ６４２は、インダクタ６４１の第２端とグランドとの間に設けられている。具体的には、キャパシタ６４２の第１端は、インダクタ６４１の第２端と電気的に接続されている。キャパシタ６４２の第２端は、グランドに電気的に接続されている。 The inductor 641 is inserted in series with the path R60 (see FIG. 3). Specifically, the first end of the inductor 641 is electrically connected to the second end of the capacitor 631 of the third attenuation circuit 63. The second end of the inductor 641 is electrically connected to the band changeover switch 41 of the first switch 40. The capacitor 642 is provided between the second end of the inductor 641 and the ground. Specifically, the first end of the capacitor 642 is electrically connected to the second end of the inductor 641. The second end of capacitor 642 is electrically connected to ground.
　次に、パワーアンプモジュール１００の構造について説明する。 Next, the structure of the power amplifier module 100 will be described.
　実装基板２００は、図４に示すように、厚さ方向Ｄ１において互いに対向する第１主面２０１と第２主面２０２と、を有する。第１主面２０１には、パワーアンプ８０、キャパシタ６１１、キャパシタ６２２、及びキャパシタ６３１等が配置されている。第２主面２０２には、第１スイッチ４０が配置されている。 As shown in FIG. 4, the mounting board 200 has a first main surface 201 and a second main surface 202 facing each other in the thickness direction D1. A power amplifier 80, a capacitor 611, a capacitor 622, a capacitor 631, and the like are arranged on the first main surface 201. The first switch 40 is arranged on the second main surface 202.
　実装基板２００は、例えば、プリント配線板、ＬＴＣＣ（Low Temperature Co-fired Ceramics）、ＨＴＣＣ（High Temperature Co-fired Ceramics）、樹脂基板である。ここにおいて、実装基板２００は、例えば、複数の誘電体層及び複数の導電層を含む多層基板である。複数の誘電体層及び複数の導電層は、実装基板２００の厚さ方向Ｄ１において積層されている。複数の導電層は、層ごとに定められた所定パターンに形成されている。複数の導電層の各々は、実装基板２００の厚さ方向Ｄ１に直交する一平面内において１つ又は複数の導体部を含む。各導電層の材料は、例えば、銅である。複数の導電層は、グランド層を含む。パワーアンプモジュール１００では、複数のグランド端子とグランド層とが、実装基板２００の有するビア導体等を介して電気的に接続されている。 The mounting board 200 is, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics), an HTCC (High Temperature Co-fired Ceramics), or a resin board. Here, the mounting substrate 200 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting substrate 200. The plurality of conductive layers are formed in a predetermined pattern determined for each layer. Each of the plurality of conductive layers includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 200. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground layer. In the power amplifier module 100, a plurality of ground terminals and a ground layer are electrically connected via a via conductor or the like included in the mounting substrate 200.
　実装基板２００は、プリント配線板、ＬＴＣＣ基板に限らず、配線構造体であってもよい。配線構造体は、例えば、多層構造体である。多層構造体は、少なくとも１つの絶縁層と、少なくとも１つの導電層とを含む。絶縁層は、所定パターンに形成されている。絶縁層が複数の場合は、複数の絶縁層は、層ごとに定められた所定パターンに形成されている。導電層は、絶縁層の所定パターンとは異なる所定パターンに形成されている。導電層が複数の場合は、複数の導電層は、層ごとに定められた所定パターンに形成されている。導電層は、１つ又は複数の再配線部を含んでもよい。配線構造体では、多層構造体の厚さ方向において互いに対向する２つの面のうち第１面が実装基板２００の第１主面２０１あり、第２面が実装基板２００の第２主面２０２である。配線構造体は、例えば、インタポーザであってもよい。インタポーザは、シリコン基板を用いたインタポーザであってもよいし、多層で構成された基板であってもよい。 The mounting board 200 is not limited to the printed wiring board and the LTCC board, but may be a wiring structure. The wiring structure is, for example, a multi-layer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may include one or more rewiring sections. In the wiring structure, of the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface is the first main surface 201 of the mounting board 200, and the second surface is the second main surface 202 of the mounting board 200. be. The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or may be a substrate composed of multiple layers.
　パワーアンプモジュール１００は、複数の外部接続端子２１０を有している。複数の外部接続端子２１０は、パワーアンプモジュール１００を、信号処理回路３等が実装されているマザー基板に接続する。複数の外部接続端子２１０は、実装基板２００の第２主面２０２上に配置された（設けられた）柱状（例えば、円柱状）の電極である。複数の外部接続端子２１０の材料は、例えば、金属（例えば、銅、銅合金等）である。複数の外部接続端子２１０のうち１つの外部接続端子２１０は、アンテナ端子Ｔ１に電気的に接続されている。 The power amplifier module 100 has a plurality of external connection terminals 210. The plurality of external connection terminals 210 connect the power amplifier module 100 to the mother board on which the signal processing circuit 3 and the like are mounted. The plurality of external connection terminals 210 are columnar (for example, columnar) electrodes arranged (provided) on the second main surface 202 of the mounting substrate 200. The material of the plurality of external connection terminals 210 is, for example, a metal (for example, copper, copper alloy, etc.). One of the plurality of external connection terminals 210 is electrically connected to the antenna terminal T1.
　パワーアンプモジュール１００は、実装基板２００の第１主面２０１において、第１主面２０１に実装されているパワーアンプ８０、キャパシタ６１１、キャパシタ６２２、及びキャパシタ６３１等を覆う第１樹脂層２３０を、更に備える。パワーアンプモジュール１００は、実装基板２００の第２主面２０２において、第２主面２０２に実装されている第１スイッチ４０等を覆う第２樹脂層２４０を、更に備える。第２樹脂層２４０の材料は、第１樹脂層２３０の材料と同じ材料であってもよいし、異なる材料であってもよい。なお、図３では、第１樹脂層２３０を省略している。 The power amplifier module 100 has a first resin layer 230 on the first main surface 201 of the mounting board 200, which covers the power amplifier 80, the capacitor 611, the capacitor 622, the capacitor 631, and the like mounted on the first main surface 201. Further prepare. The power amplifier module 100 further includes a second resin layer 240 on the second main surface 202 of the mounting board 200, which covers the first switch 40 and the like mounted on the second main surface 202. The material of the second resin layer 240 may be the same material as the material of the first resin layer 230, or may be a different material. In FIG. 3, the first resin layer 230 is omitted.
　実装基板２００は、厚さ方向Ｄ１からの平面視で、多角形状である。例えば、実装基板２００は、厚さ方向Ｄ１からの平面視で、四角形状である。実装基板２００は、図４に示すように、複数のビア導体２２０及び複数の配線導体２２１を含む。複数のビア導体２２０は、ビア導体６１３ｃ，６１４ｃ，６６１を含む。複数の配線導体２２１は、配線導体６１２ａ，６１３ａ，６１３ｂ，６１４ａ，６１４ｂ，６６０を含む。複数の配線導体２２１は、複数の導電層のうちいずれかの導電層に含まれている。複数のビア導体２２０複数の配線導体２２１のうち、厚さ方向Ｄ１から平面視した場合に、パワーアンプ８０と重なる位置に存在する１つ以上のビア導体２２０と１つ以上の配線導体２２１とは、パワーアンプ８０に対する放熱経路Ｒ８０を形成している。 The mounting board 200 has a polygonal shape in a plan view from the thickness direction D1. For example, the mounting substrate 200 has a rectangular shape in a plan view from the thickness direction D1. As shown in FIG. 4, the mounting board 200 includes a plurality of via conductors 220 and a plurality of wiring conductors 221. The plurality of via conductors 220 include via conductors 613c, 614c, 661. The plurality of wiring conductors 221 include wiring conductors 612a, 613a, 613b, 614a, 614b, 660. The plurality of wiring conductors 221 are included in any one of the plurality of conductive layers. A plurality of via conductors 220 Of a plurality of wiring conductors 221s, one or more via conductors 220 and one or more wiring conductors 221 existing at positions overlapping with the power amplifier 80 when viewed in a plan view from the thickness direction D1. , A heat dissipation path R80 for the power amplifier 80 is formed.
　本実施形態のパワーアンプモジュール１００では、パワーアンプモジュール１００（の実装基板２００）を実装基板２００の厚さ方向Ｄ１から平面視した場合に、図３～図５に示すように、第１インダクタ６１２と第２インダクタ６１３とは重なるように配置されている。このとき、第１インダクタ６１２と第２インダクタ６１３とのうち、第２インダクタ６１３は、第１インダクタ６１２よりも第２主面側に配置されている。 In the power amplifier module 100 of the present embodiment, when the power amplifier module 100 (mounting board 200) is viewed in a plan view from the thickness direction D1 of the mounting board 200, as shown in FIGS. 3 to 5, the first inductor 612 And the second inductor 613 are arranged so as to overlap each other. At this time, of the first inductor 612 and the second inductor 613, the second inductor 613 is arranged on the second main surface side with respect to the first inductor 612.
　また、第１インダクタ６１２と第２インダクタ６１３とにおいて、これらインダクタの巻き方向は、厚さ方向Ｄ１を巻回軸として、同一方向である。 Further, in the first inductor 612 and the second inductor 613, the winding direction of these inductors is the same with the thickness direction D1 as the winding axis.
　本実施形態では、第１インダクタ６１２は、配線導体６１２ａで形成されている。配線導体６１２ａは、キャパシタ６１１との接続部位（第１インダクタ６１２の第１端の相当）を始点、厚さ方向Ｄ１に沿った軸を回転軸として、右回り方向Ｄ１０に沿って形成されている（図３、図５参照）。すなわち、第１インダクタ６１２である配線導体６１２ａは、巻き方向を右回り方向Ｄ１０として形成されている。配線導体６１２ａの先端（第１インダクタの第２端に相当）は、グランド層に含まれる配線導体６６０（グランド配線）に接続されている。 In the present embodiment, the first inductor 612 is formed of the wiring conductor 612a. The wiring conductor 612a is formed along the clockwise direction D10 with the connection portion with the capacitor 611 (corresponding to the first end of the first inductor 612) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 612a, which is the first inductor 612, is formed with the winding direction as the clockwise direction D10. The tip of the wiring conductor 612a (corresponding to the second end of the first inductor) is connected to the wiring conductor 660 (ground wiring) included in the ground layer.
　第２インダクタ６１３は、配線導体６１３ａ，配線導体６１３ｂ及びビア導体６１３ｃで形成されている。配線導体６１３ａは、キャパシタ６１１との接続部位（第２インダクタ６１３の第１端の相当）を始点、厚さ方向Ｄ１に沿った軸を回転軸として、右回り方向Ｄ１０に沿って形成されている（図３、図５参照）。すなわち、第２インダクタ６１３の一部である配線導体６１３ａは、巻き方向を右回り方向Ｄ１０として形成されている。配線導体６１３ｂは、配線導体６１３ａの先端とビア導体６１３ｃを介して接続されている。配線導体６１３ｂは、ビア導体６１３ｃとの接続部位を始点、厚さ方向Ｄ１に沿った軸を回転軸として、右回り方向Ｄ１０に沿って形成されている（図３、図５参照）。配線導体６１３ｂの先端（第２インダクタ６１３の第２端に相当）は、第１切替スイッチ４５に電気的に接続されている。 The second inductor 613 is formed of a wiring conductor 613a, a wiring conductor 613b, and a via conductor 613c. The wiring conductor 613a is formed along the clockwise direction D10 with the connection portion with the capacitor 611 (corresponding to the first end of the second inductor 613) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 613a, which is a part of the second inductor 613, is formed with the winding direction as the clockwise direction D10. The wiring conductor 613b is connected to the tip of the wiring conductor 613a via a via conductor 613c. The wiring conductor 613b is formed along the clockwise direction D10 with the connection portion with the via conductor 613c as the starting point and the axis along the thickness direction D1 as the rotation axis (see FIGS. 3 and 5). The tip of the wiring conductor 613b (corresponding to the second end of the second inductor 613) is electrically connected to the first changeover switch 45.
　したがって、上述したように、第１インダクタ６１２と第２インダクタ６１３とは、巻き方向を同一方向として形成されている。 Therefore, as described above, the first inductor 612 and the second inductor 613 are formed so that the winding directions are the same.
　第１切替スイッチ４５と電気的に接続されている第２インダクタ６１３の一部が、パワーアンプモジュール１００（の実装基板２００）を実装基板２００の厚さ方向Ｄ１から平面視した場合、第１スイッチ４０の第１切替スイッチ４５と重なるように、第２インダクタ６１３は配置されている（図４参照）。なお、第２インダクタ６１３の全体が、実装基板２００の厚さ方向Ｄ１から平面視した場合、第１切替スイッチ４５と重なるように、第２インダクタ６１３は配置されてもよい。すなわち、第２インダクタ６１３の少なくとも一部が、実装基板２００の厚さ方向Ｄ１から平面視した場合、第１スイッチ４０と重なるように、第２インダクタ６１３は配置されてもよい。 When a part of the second inductor 613 electrically connected to the first changeover switch 45 views the power amplifier module 100 (mounting board 200) from the thickness direction D1 of the mounting board 200, the first switch The second inductor 613 is arranged so as to overlap the first changeover switch 45 of 40 (see FIG. 4). The second inductor 613 may be arranged so as to overlap the first changeover switch 45 when the entire second inductor 613 is viewed in a plan view from the thickness direction D1 of the mounting substrate 200. That is, the second inductor 613 may be arranged so that at least a part of the second inductor 613 overlaps with the first switch 40 when viewed in a plan view from the thickness direction D1 of the mounting substrate 200.
　さらに、図３及び図４に示すように、第１インダクタ６１２、第２インダクタ６１３及び第３インダクタ６１４は、パワーアンプモジュール１００（の実装基板２００）を実装基板２００の厚さ方向Ｄ１から平面視した場合、パワーアンプ８０と重ならないように、配置されている。 Further, as shown in FIGS. 3 and 4, in the first inductor 612, the second inductor 613, and the third inductor 614, the power amplifier module 100 (mounting board 200) is viewed in a plan view from the thickness direction D1 of the mounting board 200. If so, it is arranged so as not to overlap with the power amplifier 80.
　第３インダクタ６１４は、配線導体６１４ａ，６１４ｂ及びビア導体６１４ｃで形成されている。配線導体６１４ａは、キャパシタ６１１との接続部位（第３インダクタ６１４の第１端の相当）を始点、厚さ方向Ｄ１に沿った軸を回転軸として、左回り方向Ｄ１１に沿って形成されている（図３、図５参照）。すなわち、第３インダクタ６１４の一部である配線導体６１４ａは、巻き方向を左回り方向Ｄ１１として形成されている。配線導体６１４ｂは、配線導体６１４ａの先端とビア導体６１４ｃを介して接続されている。配線導体６１４ｂは、ビア導体６１４ｃとの接続部位を始点、厚さ方向Ｄ１に沿った軸を回転軸として、左回り方向Ｄ１１に沿って形成されている（図３、図５参照）。配線導体６１４ｂの先端（第３インダクタ６１４の第２端に相当）は、第２切替スイッチ４６に電気的に接続されている。 The third inductor 614 is formed of wiring conductors 614a and 614b and via conductors 614c. The wiring conductor 614a is formed along the counterclockwise direction D11 with the connection portion with the capacitor 611 (corresponding to the first end of the third inductor 614) as the starting point and the axis along the thickness direction D1 as the rotation axis. (See FIGS. 3 and 5). That is, the wiring conductor 614a, which is a part of the third inductor 614, is formed with the winding direction as the counterclockwise direction D11. The wiring conductor 614b is connected to the tip of the wiring conductor 614a via a via conductor 614c. The wiring conductor 614b is formed along the counterclockwise direction D11 with the connection portion with the via conductor 614c as the starting point and the axis along the thickness direction D1 as the rotation axis (see FIGS. 3 and 5). The tip of the wiring conductor 614b (corresponding to the second end of the third inductor 614) is electrically connected to the second changeover switch 46.
　（３）通信装置
　本実施形態に係る通信装置５００は、図１に示すように、パワーアンプモジュール１００を含む高周波モジュール１と、アンテナ４と、信号処理回路３と、を備える。通信装置５００は、アンテナ４を介して信号の送受信を行う。 (3) Communication Device As shown in FIG. 1, the communication device 500 according to the present embodiment includes a high frequency module 1 including a power amplifier module 100, an antenna 4, and a signal processing circuit 3. The communication device 500 transmits / receives signals via the antenna 4.
　信号処理回路３は、高周波モジュール１を通る信号を処理する。具体的には、信号処理回路３は、パワーアンプモジュール１００を通る高周波信号（送信信号）を処理する。さらに、信号処理回路３は、入力整合回路７０及びローノイズアンプ９０を通る高周波信号（受信信号）を処理する。信号処理回路３は、例えば、ＲＦ信号処理回路５と、ベースバンド信号処理回路６と、を含む。 The signal processing circuit 3 processes the signal passing through the high frequency module 1. Specifically, the signal processing circuit 3 processes a high-frequency signal (transmission signal) that passes through the power amplifier module 100. Further, the signal processing circuit 3 processes a high frequency signal (received signal) passing through the input matching circuit 70 and the low noise amplifier 90. The signal processing circuit 3 includes, for example, an RF signal processing circuit 5 and a baseband signal processing circuit 6.
　ベースバンド信号処理回路６は、図１に示すように、例えばＢＢＩＣ（Baseband Integrated Circuit）であり、ＲＦ信号処理回路５に電気的に接続されている。ベースバンド信号処理回路６は、ベースバンド信号からＩ相信号及びＱ相信号を生成する。ベースバンド信号処理回路６は、Ｉ相信号とＱ相信号とを合成することでＩＱ変調処理を行って、送信信号を出力する。この際、送信信号は、所定周波数の搬送波信号を、当該搬送波信号の周期よりも長い周期で振幅変調した変調信号として生成される。 As shown in FIG. 1, the baseband signal processing circuit 6 is, for example, a BBIC (Baseband Integrated Circuit), and is electrically connected to the RF signal processing circuit 5. The baseband signal processing circuit 6 generates an I-phase signal and a Q-phase signal from the baseband signal. The baseband signal processing circuit 6 performs IQ modulation processing by synthesizing an I-phase signal and a Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulation signal obtained by amplitude-modulating a carrier signal having a predetermined frequency with a period longer than the period of the carrier signal.
　ＲＦ信号処理回路５は、図１に示すように、例えばＲＦＩＣ（Radio Frequency Integrated Circuit）であり、高周波モジュール１とベースバンド信号処理回路６との間に設けられている。ＲＦ信号処理回路５は、ベースバンド信号処理回路６からの送信信号に対して信号処理を行う機能と、アンテナ４で受信された受信信号に対して信号処理を行う機能とを有する。ＲＦ信号処理回路５は、マルチバンド対応の処理回路であり、複数の通信バンドの送信信号を生成して増幅することが可能である。 As shown in FIG. 1, the RF signal processing circuit 5 is, for example, an RFIC (Radio Frequency Integrated Circuit), and is provided between the high frequency module 1 and the baseband signal processing circuit 6. The RF signal processing circuit 5 has a function of performing signal processing on the transmission signal from the baseband signal processing circuit 6 and a function of performing signal processing on the received signal received by the antenna 4. The RF signal processing circuit 5 is a multi-band compatible processing circuit, and can generate and amplify transmission signals of a plurality of communication bands.
　なお、通信装置５００では、ベースバンド信号処理回路６は必須の構成要素ではない。 In the communication device 500, the baseband signal processing circuit 6 is not an indispensable component.
　（４）利点
　以上説明したように、上記実施形態のパワーアンプモジュール１００は、実装基板２００と、パワーアンプ８０と、パワーアンプ８０から出力された信号の高調波を減衰させる減衰用回路（第１減衰用回路６１）と、を備える。減衰用回路は、実装基板２００に内層され、パワーアンプ８０の出力端子８１に接続される複数のインダクタ（第１インダクタ６１２、第２インダクタ６１３）を含む。複数のインダクタは、実装基板２００の厚さ方向Ｄ１から平面視した場合に重なるように配置されている。 (4) Advantages As described above, the power amplifier module 100 of the above embodiment is an attenuation circuit (first) for attenuating the harmonics of the mounting board 200, the power amplifier 80, and the signal output from the power amplifier 80. Attenuation circuit 61) and. The attenuation circuit includes a plurality of inductors (first inductor 612, second inductor 613) that are inner-layered on the mounting board 200 and connected to the output terminal 81 of the power amplifier 80. The plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction D1 of the mounting substrate 200.
　この構成によると、複数のインダクタを、厚さ方向Ｄ１に積層する（重ねる）ので、パワーアンプモジュール１００（の実装基板２００）のレイアウト面積を小さくすることができる。したがって、パワーアンプモジュール１００の小型化を図ることができる。 According to this configuration, since a plurality of inductors are stacked (stacked) in the thickness direction D1, the layout area of the power amplifier module 100 (mounting board 200) can be reduced. Therefore, the power amplifier module 100 can be miniaturized.
　また、パワーアンプモジュール１００では、複数のインダクタのうち少なくとも１つのインダクタ（例えば、第２インダクタ６１３）は、スイッチ（第１切替スイッチ４５）と接続されている。 Further, in the power amplifier module 100, at least one inductor (for example, the second inductor 613) among the plurality of inductors is connected to the switch (first changeover switch 45).
　この構成によると、スイッチを用いることで、インダクタンス成分の調整を行うことができる。例えば、スイッチをオンにした場合、第２インダクタ６１３にインダクタンス成分が発生し、第１インダクタ６１２で発生するインダクタンス成分とで、全体のインダクタンス成分を小さく見せることができる。 According to this configuration, the inductance component can be adjusted by using a switch. For example, when the switch is turned on, an inductance component is generated in the second inductor 613, and the overall inductance component can be made to appear small by the inductance component generated in the first inductor 612.
　例えば、実施形態１では、パワーアンプモジュール１００は、第１切替スイッチ４５と接続された第２インダクタ６１３と、第２切替スイッチ４６と接続された第３インダクタ６１４と、を備えている。このとき、第１切替スイッチ４５と第２切替スイッチ４６とのそれぞれのオン、オフ状態の組み合わせパターンとして４パターン存在する。第１のパターンは、第１切替スイッチ４５及び第２切替スイッチ４６の双方はオフ状態であるパターンである。第２のパターンは、第１切替スイッチ４５はオン状態で、第２切替スイッチ４６はオフ状態であるパターンである。第３のパターンは、第１切替スイッチ４５はオフ状態で、第２切替スイッチ４６はオン状態であるパターンである。第４のパターンは、第１切替スイッチ４５及び第２切替スイッチ４６の双方はオン状態であるパターンである。各パターンにおいて、発生するインダクタンス成分は異なる。 For example, in the first embodiment, the power amplifier module 100 includes a second inductor 613 connected to the first changeover switch 45 and a third inductor 614 connected to the second changeover switch 46. At this time, there are four patterns as combination patterns of the first changeover switch 45 and the second changeover switch 46 in the on and off states, respectively. The first pattern is a pattern in which both the first changeover switch 45 and the second changeover switch 46 are in the off state. The second pattern is a pattern in which the first changeover switch 45 is in the on state and the second changeover switch 46 is in the off state. The third pattern is a pattern in which the first changeover switch 45 is in the off state and the second changeover switch 46 is in the on state. The fourth pattern is a pattern in which both the first changeover switch 45 and the second changeover switch 46 are in the ON state. In each pattern, the generated inductance component is different.
　第１パターンでは、インダクタンス値が最も小さい第１インダクタ６１２のみにインダクタンス成分が発生する。例えば、この場合、フィルタ３１ａを使用することで、良好な通信を実現することができる。第２パターンでは、第１インダクタ６１２及び第２インダクタ６１３にインダクタンス成分が発生する。例えば、この場合、フィルタ３２ａを使用することで、良好な通信を実現することができる。第３パターンでは、第１インダクタ６１２及び第３インダクタ６１４にインダクタンス成分が発生する。例えば、この場合、フィルタ３３ａを使用することで、良好な通信を実現することができる。第４パターンでは、第１インダクタ６１２、第２インダクタ６１３及び第３インダクタ６１４にインダクタンス成分が発生する。例えば、この場合、フィルタ３４ａを使用することで、良好な通信を実現することができる。 In the first pattern, an inductance component is generated only in the first inductor 612 having the smallest inductance value. For example, in this case, good communication can be realized by using the filter 31a. In the second pattern, an inductance component is generated in the first inductor 612 and the second inductor 613. For example, in this case, good communication can be realized by using the filter 32a. In the third pattern, an inductance component is generated in the first inductor 612 and the third inductor 614. For example, in this case, good communication can be realized by using the filter 33a. In the fourth pattern, an inductance component is generated in the first inductor 612, the second inductor 613, and the third inductor 614. For example, in this case, good communication can be realized by using the filter 34a.
　また、上記実施形態では、第１インダクタ６１２と第２インダクタ６１３とにおいて、巻き方向は同一としている。この構成によると、第２インダクタ６１３のインダクタンス成分を長く見せることができる。 Further, in the above embodiment, the winding direction is the same for the first inductor 612 and the second inductor 613. According to this configuration, the inductance component of the second inductor 613 can be made to appear longer.
　また、上記実施形態では、減衰用回路は、出力整合回路６０に含まれている。そのため、出力整合回路６０の小型化を図ることができる。 Further, in the above embodiment, the attenuation circuit is included in the output matching circuit 60. Therefore, the output matching circuit 60 can be miniaturized.
　（５）変形例
　以下に、変形例について列記する。なお、以下に説明する変形例は、上記実施形態と適宜組み合わせて適用可能である。 (5) Modified Examples The modified examples are listed below. The modifications described below can be applied in combination with the above embodiments as appropriate.
　（５．１）変形例１
　上記実施形態に係るパワーアンプモジュール１００では、図４に示すように、実装基板２００の第２主面２０２側において、第２主面２０２上に実装されている第１スイッチ４０等を覆うように第２樹脂層２４０が設けられている。また、パワーアンプモジュール１００は、円柱状に形成されている複数の外部接続端子２１０を備えており、これら複数の外部接続端子２１０によりマザー基板に接続されている。 (5.1) Modification 1
In the power amplifier module 100 according to the above embodiment, as shown in FIG. 4, the first switch 40 and the like mounted on the second main surface 202 are covered on the second main surface 202 side of the mounting board 200. A second resin layer 240 is provided. Further, the power amplifier module 100 includes a plurality of external connection terminals 210 formed in a columnar shape, and is connected to the mother board by the plurality of external connection terminals 210.
　これに対して、図６に示すように、実装基板２００の第２主面２０２側において第２樹脂層２４０が省略されており、かつ、球状に形成されている複数の外部接続端子２１５によりマザー基板に接続されていてもよい。 On the other hand, as shown in FIG. 6, the second resin layer 240 is omitted on the second main surface 202 side of the mounting substrate 200, and the mother is formed by a plurality of external connection terminals 215 formed in a spherical shape. It may be connected to a board.
　複数の外部接続端子２１５の各々は、例えば、球状に形成されているボールバンプである。ボールバンプの材料は、例えば、金、銅、はんだ等である。複数の外部接続端子２１５のうち１つの外部接続端子２１５は、アンテナ端子Ｔ１に電気的に接続されている。 Each of the plurality of external connection terminals 215 is, for example, a ball bump formed in a spherical shape. The material of the ball bump is, for example, gold, copper, solder or the like. One of the plurality of external connection terminals 215, the external connection terminal 215, is electrically connected to the antenna terminal T1.
　また、パワーアンプモジュール１００は、複数の外部接続端子２１０及び複数の外部接続端子２１５を備えてもよい。この場合、複数の外部接続端子２１０のうち１つの外部接続端子２１０がアンテナ端子Ｔ１と電気的に接続されてもよいし、複数の外部接続端子２１５のうち１つの外部接続端子２１５がアンテナ端子Ｔ１と電気的に接続されてもよい。 Further, the power amplifier module 100 may include a plurality of external connection terminals 210 and a plurality of external connection terminals 215. In this case, one of the plurality of external connection terminals 210 may be electrically connected to the antenna terminal T1, and one of the plurality of external connection terminals 215, the external connection terminal 215, may be the antenna terminal T1. May be electrically connected to.
　（５．２）変形例２
　上記実施形態では、パワーアンプモジュール１００は、厚さ方向Ｄ１において互いに対向する第１主面２０１及び第２主面２０２の双方に部品が配置される実装基板２００を備える構成としたが、この構成に限定されない。 (5.2) Modification 2
In the above embodiment, the power amplifier module 100 is configured to include a mounting board 200 in which components are arranged on both the first main surface 201 and the second main surface 202 facing each other in the thickness direction D1. Not limited to.
　実装基板２００の代わりに、第１主面２０１及び第２主面２０２のうち一方の主面、例えば第１主面２０１に部品が実装される片面実装可能な実装基板が用いられてもよい。 Instead of the mounting board 200, a single-sided mounting board on which components are mounted on one of the first main surface 201 and the second main surface 202, for example, the first main surface 201 may be used.
　（５．３）変形例３
　上記実施形態では、パワーアンプモジュール１００は、第３インダクタ６１４を備える構成としたが、この構成に限定されない。 (5.3) Modification 3
In the above embodiment, the power amplifier module 100 is configured to include the third inductor 614, but is not limited to this configuration.
　第３インダクタ６１４は、必須の構成要素ではない。すなわち、パワーアンプモジュール１００は、第３インダクタ６１４を備えていない構成であってもよい。 The third inductor 614 is not an essential component. That is, the power amplifier module 100 may be configured not to include the third inductor 614.
　（５．４）変形例４
　上記実施形態では、パワーアンプモジュール１００の第１インダクタ６１２は、スイッチを介さずにグランドに接続されている構成としたが、この構成に限定されない。 (5.4) Modification 4
In the above embodiment, the first inductor 612 of the power amplifier module 100 is connected to the ground without a switch, but is not limited to this configuration.
　第１インダクタ６１２は、スイッチを介してグランドに接続されてもよい。 The first inductor 612 may be connected to the ground via a switch.
　（５．５）変形例５
　上記実施形態では、実装基板２００を厚さ方向Ｄ１から平面視した場合に、第１インダクタ６１２と第２インダクタ６１３との２つのインダクタが重なるように配置されている構成としたが、この構成に限定されない。 (5.5) Modification 5
In the above embodiment, when the mounting substrate 200 is viewed in a plan view from the thickness direction D1, the two inductors of the first inductor 612 and the second inductor 613 are arranged so as to overlap each other. Not limited.
　実装基板２００の厚さ方向Ｄ１から平面視した場合に、３つ以上のインダクタが重なるように配置されてもよい。この場合、３つ以上のインダクタの各々は、キャパシタ６１１とグランドとの間に接続されている。３つ以上のインダクタの各々は、スイッチを介して、又はスイッチを介さずに、グランドに接続されている。 When viewed in a plan view from the thickness direction D1 of the mounting board 200, three or more inductors may be arranged so as to overlap each other. In this case, each of the three or more inductors is connected between the capacitor 611 and ground. Each of the three or more inductors is connected to ground with or without a switch.
　（５．６）変形例６
　上記実施形態では、第１減衰用回路６１が、第１インダクタ６１２及び第２インダクタ６１３を含む構成としたが、この構成に限定されない。 (5.6) Modification 6
In the above embodiment, the first attenuation circuit 61 has a configuration including the first inductor 612 and the second inductor 613, but the configuration is not limited to this.
　第２減衰用回路６２が、第１インダクタ６１２及び第２インダクタ６１３を含んでもよい。また、第３減衰用回路６３及び第４減衰用回路６４の少なくとも一方は、第１インダクタ６１２及び第２インダクタ６１３を含んでもよい。 The second attenuation circuit 62 may include a first inductor 612 and a second inductor 613. Further, at least one of the third attenuation circuit 63 and the fourth attenuation circuit 64 may include the first inductor 612 and the second inductor 613.
　第１減衰用回路６１及び第２減衰用回路６２の双方が、第１インダクタ６１２及び第２インダクタ６１３を含んでもよい。または、第１減衰用回路６１、第２減衰用回路６２、第３減衰用回路６３及び第４減衰用回路６４のうち少なくとも２つの回路が、第１インダクタ６１２及び第２インダクタ６１３を含んでもよい。 Both the first attenuation circuit 61 and the second attenuation circuit 62 may include the first inductor 612 and the second inductor 613. Alternatively, at least two of the first attenuation circuit 61, the second attenuation circuit 62, the third attenuation circuit 63, and the fourth attenuation circuit 64 may include the first inductor 612 and the second inductor 613. ..
　（５．７）変形例７
　上記実施形態では、バンド切替スイッチ４１、第１切替スイッチ４５及び第２切替スイッチ４６は、１チップ化されている構成としたが、この構成に限定されない。バンド切替スイッチ４１、第１切替スイッチ４５及び第２切替スイッチ４６は、１チップ化されることは必須ではない。バンド切替スイッチ４１、第１切替スイッチ４５及び第２切替スイッチ４６は、それぞれ個別に第２主面２０２に配置（実装）されてもよい。または、バンド切替スイッチ４１、第１切替スイッチ４５及び第２切替スイッチ４６のうち２つの構成要素が１チップ化されてもよい。 (5.7) Modification 7
In the above embodiment, the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 are configured as one chip, but the configuration is not limited to this. It is not essential that the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 are integrated into one chip. The band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 may be individually arranged (mounted) on the second main surface 202. Alternatively, two components of the band changeover switch 41, the first changeover switch 45, and the second changeover switch 46 may be integrated into one chip.
　（まとめ）
　以上説明したように、第１の態様のパワーアンプモジュール（１００）は、実装基板（２００）と、パワーアンプ（８０）と、パワーアンプ（８０）から出力された信号の高調波を減衰させる減衰用回路（例えば、第１減衰用回路６１）と、を備える。減衰用回路は、実装基板（２００）に内層され、パワーアンプ（８０）の出力端子（８１）に接続される複数のインダクタ（第１インダクタ６１２、第２インダクタ６１３）を含む。複数のインダクタは、実装基板（２００）の厚さ方向（Ｄ１）から平面視した場合に重なるように配置されている。 (summary)
As described above, the power amplifier module (100) of the first aspect is an attenuation that attenuates the harmonics of the signals output from the mounting board (200), the power amplifier (80), and the power amplifier (80). A circuit (for example, a first attenuation circuit 61) is provided. The attenuation circuit includes a plurality of inductors (first inductor 612, second inductor 613) which are inner-layered on the mounting board (200) and connected to the output terminal (81) of the power amplifier (80). The plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction (D1) of the mounting substrate (200).
　この構成によると、複数のインダクタを、厚さ方向（Ｄ１）に積層する（重ねる）ので、パワーアンプモジュール（１００）（の実装基板２００）のレイアウト面積を小さくすることができる。したがって、パワーアンプモジュール（１００）の小型化を図ることができる。 According to this configuration, since a plurality of inductors are stacked (stacked) in the thickness direction (D1), the layout area of the power amplifier module (100) (mounting board 200) can be reduced. Therefore, the power amplifier module (100) can be miniaturized.
　第２の態様のパワーアンプモジュール（１００）では、第１の態様において、複数のインダクタの巻き方向は、厚さ方向（Ｄ１）を巻回軸として、同一方向である。 In the power amplifier module (100) of the second aspect, in the first aspect, the winding directions of the plurality of inductors are the same with the thickness direction (D1) as the winding axis.
　この構成によると、複数のインダクタのうち下層に存在するインダクタのインダクタンス成分を長く見せることができる。 According to this configuration, it is possible to make the inductance component of the inductor existing in the lower layer of the plurality of inductors look longer.
　第３の態様のパワーアンプモジュール（１００）は、第１又は第２の態様において、減衰用回路を含む出力整合回路（６０）を、備える。出力整合回路（６０）は、パワーアンプ（８０）と、出力整合回路（６０）の出力側と接続されている外部回路（例えば、バンド切替スイッチ４１）との間のインピーダンスを整合させる。 The power amplifier module (100) of the third aspect includes an output matching circuit (60) including an attenuation circuit in the first or second aspect. The output matching circuit (60) matches the impedance between the power amplifier (80) and the external circuit (for example, the band changeover switch 41) connected to the output side of the output matching circuit (60).
　この構成によると、出力整合回路（６０）の小型化を図ることができる。 According to this configuration, the output matching circuit (60) can be downsized.
　第４の態様のパワーアンプモジュール（１００）は、第１～第３のいずれかの態様において、スイッチ回路（第１スイッチ４０）を、更に備える。スイッチ回路は、複数のインダクタのうち１つのインダクタに接続されたスイッチ（例えば、第１切替スイッチ４５）を含む。 The power amplifier module (100) of the fourth aspect further includes a switch circuit (first switch 40) in any one of the first to third aspects. The switch circuit includes a switch (for example, a first changeover switch 45) connected to one of a plurality of inductors.
　この構成によると、スイッチを用いることで、インダクタンス成分の調整を行うことができる。例えば、スイッチをオンにした場合、スイッチと接続されたインダクタにインダクタンス成分が発生し、他のインダクタで発生するインダクタンス成分とで、全体のインダクタンス成分を小さくすることができる。 According to this configuration, the inductance component can be adjusted by using a switch. For example, when the switch is turned on, an inductance component is generated in the inductor connected to the switch, and the total inductance component can be reduced by the inductance components generated in other inductors.
　第５の態様のパワーアンプモジュール（１００）では、第４の態様において、実装基板（２００）は、互いに対向する第１主面（２０１）及び第２主面（２０２）を有している。パワーアンプ（８０）は第１主面（２０１）に設けられ、スイッチ回路は第２主面（２０２）に設けられている。実装基板（２００）の厚さ方向（Ｄ１）から平面視した場合に、上記１つのインダクタの少なくとも一部は、スイッチ回路と重なるように配置されている。 In the power amplifier module (100) of the fifth aspect, in the fourth aspect, the mounting substrate (200) has a first main surface (201) and a second main surface (202) facing each other. The power amplifier (80) is provided on the first main surface (201), and the switch circuit is provided on the second main surface (202). When viewed in a plan view from the thickness direction (D1) of the mounting substrate (200), at least a part of the above-mentioned one inductor is arranged so as to overlap the switch circuit.
　この構成によると、上記１つのインダクタと、スイッチとの間の経路長を短くすることができる。 According to this configuration, the path length between the above one inductor and the switch can be shortened.
　第６の態様のパワーアンプモジュール（１００）では、第５の態様において、スイッチ回路は、通信に用いる周波数帯域を切り替える切替スイッチ（例えば、バンド切替スイッチ４１）を、さらに含む。 In the power amplifier module (100) of the sixth aspect, in the fifth aspect, the switch circuit further includes a changeover switch (for example, a band changeover switch 41) for switching the frequency band used for communication.
　この構成によると、通信に使用する周波数帯域を切り替えるとともに、インダクタンス成分の調整を行うことができる。すなわち、使用する周波数帯域に適したインダクタンス成分を得ることができる。 According to this configuration, it is possible to switch the frequency band used for communication and adjust the inductance component. That is, it is possible to obtain an inductance component suitable for the frequency band to be used.
　第７の態様のパワーアンプモジュール（１００）では、第５又は第６の態様において、上記１つのインダクタは、複数のインダクタのうち、第２主面（２０２）に最も近くに配置されている。 In the power amplifier module (100) of the seventh aspect, in the fifth or sixth aspect, the one inductor is arranged closest to the second main surface (202) among the plurality of inductors.
　この構成によると、上記１つのインダクタと、スイッチとの間の経路長を短くすることができる。 According to this configuration, the path length between the above one inductor and the switch can be shortened.
　第８の態様のパワーアンプモジュール（１００）では、第１～第７のいずれかの態様において、実装基板（２００）の厚さ方向（Ｄ１）から平面視した場合に、複数のインダクタは、パワーアンプ（８０）と重ならないように配置されている。 In the power amplifier module (100) of the eighth aspect, in any one of the first to seventh aspects, when viewed in a plan view from the thickness direction (D1) of the mounting substrate (200), the plurality of inductors have power. It is arranged so as not to overlap with the amplifier (80).
　この構成によると、パワーアンプ（８０）の配下に、放熱用の経路を容易に確保することができる。 According to this configuration, a heat dissipation path can be easily secured under the power amplifier (80).
　第９の態様の通信装置（５００）は、第１～第８のいずれかの態様のパワーアンプモジュール（１００）と、パワーアンプモジュール（１００）を通る高周波信号を処理する信号処理回路（３）と、を備える。 The communication device (500) of the ninth aspect is a signal processing circuit (3) that processes a high frequency signal passing through the power amplifier module (100) of any one of the first to eighth aspects and the power amplifier module (100). And.
　この構成によると、パワーアンプモジュール（１００）の小型化を図ることができる。 According to this configuration, the power amplifier module (100) can be miniaturized.
　　１　高周波モジュール
　　３　信号処理回路
　　４　アンテナ
　　５　ＲＦ信号処理回路
　　６　ベースバンド信号処理回路
　　１０　アンテナスイッチ
　　１１，４２，５１　共通端子
　　１２，１３，１４，１５，４３ａ，４３ｂ，４３ｃ，４３ｄ，５２ａ，５２ｂ，５２ｃ，５２ｄ　選択端子
　　２０　整合回路
　　２１，２２，２３，２４　チップインダクタ
　　３０　フィルタ群
　　３１，３１ａ，３１ｂ，３２，３２ａ，３２ｂ，３３，３３ａ，３３ｂ，３４，３４ａ，３４ｂ　フィルタ
　　４０　第１スイッチ
　　４１　バンド切替スイッチ（切替スイッチ）
　　４５　第１切替スイッチ
　　４６　第２切替スイッチ
　　５０　第２スイッチ
　　６０　出力整合回路
　　６１　第１減衰用回路
　　６２　第２減衰用回路
　　６３　第３減衰用回路
　　６４　第４減衰用回路
　　７０　入力整合回路
　　８０　パワーアンプ
　　８１，９２　出力端子
　　８２，９１　入力端子
　　９０　ローノイズアンプ
　　１００　パワーアンプモジュール
　　２００　実装基板
　　２０１　第１主面
　　２０２　第２主面
　　２１０，２１５　外部接続端子
　　２２０，６１３ｃ，６１４ｃ，６６１　ビア導体
　　２２１，６１２ａ，６１３ａ，６１３ｂ，６１４ａ，６１４ｂ，６６０　配線導体
　　２３０　第１樹脂層
　　２４０　第２樹脂層
　　４５１，４６１　第１端子
　　４５２，４６２　第２端子
　　５００　通信装置
　　６１１，６２２，６３１，６４２　キャパシタ
　　６１２　第１インダクタ
　　６１３　第２インダクタ
　　６１４　第３インダクタ
　　６１５　第４インダクタ
　　６２１，６３２，６４１　インダクタ
　　Ｄ１　厚さ方向
　　Ｄ１０　右回り方向
　　Ｄ１１　左回り方向
　　Ｒ６０　経路
　　Ｒ８０　放熱経路
　　Ｔ１　アンテナ端子 1 High frequency module 3 Signal processing circuit 4 Antenna 5 RF signal processing circuit 6 Baseband signal processing circuit 10 Antenna switch 11, 42, 51 Common terminals 12, 13, 14, 15, 43a, 43b, 43c, 43d, 52a, 52b, 52c, 52d selection terminal 20 Matching circuit 21, 22, 23, 24 Chip inductor 30 Filter group 31, 31a, 31b, 32, 32a, 32b, 33, 33a, 33b, 34, 34a, 34b Filter 40 1st switch 41 band Changeover switch (changeover switch)
45 1st changeover switch 46 2nd changeover switch 50 2nd switch 60 Output matching circuit 61 1st attenuation circuit 62 2nd attenuation circuit 63 3rd attenuation circuit 64 4th attenuation circuit 70 Input matching circuit 80 Power amplifier 81 , 92 Output terminal 82,91 Input terminal 90 Low noise amplifier 100 Power amplifier module 200 Mounting board 201 1st main surface 202 2nd main surface 210, 215 External connection terminals 220, 613c, 614c, 661 Via conductors 221, 612a, 613a, 613b, 614a, 614b, 660 Wiring conductor 230 1st resin layer 240 2nd resin layer 451, 461 1st terminal 452,462 2nd terminal 500 Communication device 611, 622, 631, 642 Capacitor 612 1st inductor 613 2nd inductor 614 3rd Inductor 615 4th Inductor 621, 632, 641 Inductor D1 Thickness direction D10 Right-handed direction D11 Left-handed direction R60 path R80 Heat dissipation path T1 Antenna terminal

Claims (9)

  1. 　実装基板と、
    　パワーアンプと、
    　前記パワーアンプから出力された信号の高調波を減衰させる減衰用回路と、を備え、
    　前記減衰用回路は、
    　前記実装基板に内層され、前記パワーアンプの出力端子に接続される複数のインダクタを含み、
    　前記複数のインダクタは、前記実装基板の厚さ方向から平面視した場合に重なるように配置されている、
    　パワーアンプモジュール。     Mounting board and
    With a power amplifier
    It is provided with an attenuation circuit for attenuating the harmonics of the signal output from the power amplifier.
    The attenuation circuit is
    It contains a plurality of inductors that are inner layered on the mounting board and connected to the output terminals of the power amplifier.
    The plurality of inductors are arranged so as to overlap each other when viewed in a plan view from the thickness direction of the mounting substrate.
    Power amplifier module.
  2. 　前記複数のインダクタの巻き方向は、前記厚さ方向を巻回軸として、同一方向である、
    　請求項１に記載のパワーアンプモジュール。     The winding directions of the plurality of inductors are the same with the thickness direction as the winding axis.
    The power amplifier module according to claim 1.
  3. 　前記減衰用回路を含む出力整合回路を、備え、
    　前記出力整合回路は、前記パワーアンプと、前記出力整合回路の出力側と接続されている外部回路との間のインピーダンスを整合させる、
    　請求項１又は２に記載のパワーアンプモジュール。     An output matching circuit including the attenuation circuit is provided.
    The output matching circuit matches the impedance between the power amplifier and an external circuit connected to the output side of the output matching circuit.
    The power amplifier module according to claim 1 or 2.
  4. 　前記複数のインダクタのうち１つのインダクタに接続されたスイッチを含むスイッチ回路を、更に備える、
    　請求項１～３のいずれか一項に記載のパワーアンプモジュール。     A switch circuit including a switch connected to one of the plurality of inductors is further provided.
    The power amplifier module according to any one of claims 1 to 3.
  5. 　前記実装基板は、互いに対向する第１主面及び第２主面を有しており、
    　前記パワーアンプは前記第１主面に設けられ、前記スイッチ回路は前記第２主面に設けられており、
    　前記実装基板の前記厚さ方向から平面視した場合に、前記１つのインダクタの少なくとも一部は、前記スイッチ回路と重なるように配置されている、
    　請求項４に記載のパワーアンプモジュール。     The mounting board has a first main surface and a second main surface facing each other.
    The power amplifier is provided on the first main surface, and the switch circuit is provided on the second main surface.
    When viewed in a plan view from the thickness direction of the mounting board, at least a part of the one inductor is arranged so as to overlap the switch circuit.
    The power amplifier module according to claim 4.
  6. 　前記スイッチ回路は、通信に用いる周波数帯域を切り替える切替スイッチを、さらに含む、
    　請求項５に記載のパワーアンプモジュール。     The switch circuit further includes a changeover switch for switching a frequency band used for communication.
    The power amplifier module according to claim 5.
  7. 　前記１つのインダクタは、前記複数のインダクタのうち、前記第２主面に最も近くに配置されている、
    　請求項５又は６に記載のパワーアンプモジュール。     The one inductor is arranged closest to the second main surface among the plurality of inductors.
    The power amplifier module according to claim 5 or 6.
  8. 　前記実装基板の前記厚さ方向から平面視した場合に、前記複数のインダクタは、前記パワーアンプと重ならないように配置されている、
    　請求項１～７のいずれか一項に記載のパワーアンプモジュール。     The plurality of inductors are arranged so as not to overlap with the power amplifier when viewed in a plan view from the thickness direction of the mounting board.
    The power amplifier module according to any one of claims 1 to 7.
  9. 　請求項１～８のいずれか一項に記載のパワーアンプモジュールと、
    　前記パワーアンプモジュールを通る高周波信号を処理する信号処理回路と、を備える、
    　通信装置。     The power amplifier module according to any one of claims 1 to 8.
    A signal processing circuit for processing a high frequency signal passing through the power amplifier module is provided.
    Communication device.
PCT/JP2020/045528 2020-04-24 2020-12-07 Power amplifier module and communication device WO2021215041A1 (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129565A (en) * 2005-11-04 2007-05-24 Alps Electric Co Ltd Low-pass filter
JP2007158748A (en) * 2005-12-06 2007-06-21 Renesas Technology Corp Rf power amplifier module
JP2008211764A (en) * 2006-12-08 2008-09-11 Renesas Technology Corp Electronic device and rf module
JP2017208729A (en) * 2016-05-19 2017-11-24 株式会社村田製作所 Power amplification module
JP2018032951A (en) * 2016-08-23 2018-03-01 株式会社村田製作所 Power Amplifier Module
JP2018064266A (en) * 2016-10-07 2018-04-19 株式会社村田製作所 High frequency filter and high frequency module
WO2019240096A1 (en) * 2018-06-11 2019-12-19 株式会社村田製作所 High-frequency module and communication device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129565A (en) * 2005-11-04 2007-05-24 Alps Electric Co Ltd Low-pass filter
JP2007158748A (en) * 2005-12-06 2007-06-21 Renesas Technology Corp Rf power amplifier module
JP2008211764A (en) * 2006-12-08 2008-09-11 Renesas Technology Corp Electronic device and rf module
JP2017208729A (en) * 2016-05-19 2017-11-24 株式会社村田製作所 Power amplification module
JP2018032951A (en) * 2016-08-23 2018-03-01 株式会社村田製作所 Power Amplifier Module
JP2018064266A (en) * 2016-10-07 2018-04-19 株式会社村田製作所 High frequency filter and high frequency module
WO2019240096A1 (en) * 2018-06-11 2019-12-19 株式会社村田製作所 High-frequency module and communication device

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