WO2021206050A1 - 圧電デバイス - Google Patents

圧電デバイス Download PDF

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Publication number
WO2021206050A1
WO2021206050A1 PCT/JP2021/014486 JP2021014486W WO2021206050A1 WO 2021206050 A1 WO2021206050 A1 WO 2021206050A1 JP 2021014486 W JP2021014486 W JP 2021014486W WO 2021206050 A1 WO2021206050 A1 WO 2021206050A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
piezoelectric
insulating layer
region
support substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/014486
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English (en)
French (fr)
Japanese (ja)
Inventor
宗久 渡辺
康政 谷口
克也 大門
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2022514061A priority Critical patent/JP7459936B2/ja
Priority to CN202180023499.6A priority patent/CN115349226B/zh
Publication of WO2021206050A1 publication Critical patent/WO2021206050A1/ja
Priority to US17/960,161 priority patent/US20230027753A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H03H9/059—Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Definitions

  • the present disclosure relates to a piezoelectric device, and more specifically, to a technique for suppressing disconnection of a wiring electrode in the piezoelectric device.
  • a piezoelectric device in which a functional element is formed on a piezoelectric thin film is known.
  • Patent Document 1 a piezoelectric thin film is laminated on a laminated film formed by a low sound velocity film and a high sound velocity film, and a comb-shaped thin film is formed on the piezoelectric thin film.
  • An elastic wave device in which an IDT (Interdigital Transducer) electrode is formed is disclosed.
  • Patent Document 1 an insulating layer is formed on a support substrate in a region where the above-mentioned laminated film is not formed, and the insulating layer is formed. Reaches above the piezoelectric thin film. Then, a wiring electrode is formed on the insulating layer.
  • the wiring electrodes arranged on the insulating layer have a shape that conforms to the shape of the insulating layer. There is. Therefore, if the height of the insulating layer on the support substrate and the height of the piezoelectric thin film are different, a step is generated in the wiring electrode. When this step is large, stress is concentrated on the bent portion of the wiring electrode, and cracks occur in the bent portion, which may cause the wiring electrode to break.
  • the present disclosure has been made to solve the above-mentioned problems, and an object thereof is to suppress disconnection of a wiring electrode formed in a piezoelectric device.
  • the piezoelectric device includes a support substrate, an intermediate layer arranged on the support substrate, a piezoelectric layer arranged on the intermediate layer, a functional element formed on the piezoelectric layer, an insulating layer, and wiring. It is equipped with an electrode.
  • the insulating layer is arranged on the support substrate so as to be in contact with the side surface of the laminate formed by the intermediate layer and the piezoelectric layer.
  • the wiring electrode is formed from the insulating layer to the piezoelectric layer and is connected to the functional element.
  • the insulating layer includes a first region and a second region. The first region is formed thinner than the thickness of the laminated body. The second region connects the first region and the laminated body, and has a portion inclined from the first region toward the upper surface of the piezoelectric layer. The second region of the insulating layer does not reach on the piezoelectric layer.
  • the insulating layer in the second region does not reach the upper surface of the piezoelectric layer in the laminated body. That is, the end portion of the upper surface of the insulating layer is formed so as to be in contact with the side surface of the laminated body. Therefore, the inclination angle of the second region can be made smaller than when the insulating layer reaches the piezoelectric layer. As a result, the bending angle of the wiring electrode formed on the insulating layer becomes small, so that disconnection of the wiring electrode due to bending can be suppressed.
  • FIG. It is sectional drawing of the piezoelectric device which concerns on Embodiment 1.
  • FIG. It is a partial cross-sectional view of the piezoelectric device of FIG. It is a partial cross-sectional view of the piezoelectric device of the comparative example. It is a partial cross-sectional view of the piezoelectric device which concerns on Embodiment 2.
  • FIG. It is a partial cross-sectional view of the piezoelectric device which concerns on Embodiment 3.
  • FIG. 1 is a cross-sectional view of the piezoelectric device 100 according to the first embodiment. Further, FIG. 2 is an enlarged view of a part of the cross section of the piezoelectric device 100 of FIG.
  • the piezoelectric device 100 includes a support substrate 110, a functional element 120, a piezoelectric layer 130, an intermediate layer 140, an insulating layer 150, and a cover layer 175.
  • the positive direction of the Z axis in each figure may be referred to as the upper surface side
  • the negative direction may be referred to as the lower surface side.
  • Supporting substrate 110 for example, lithium tantalate (LiTaO 3), lithium niobate (LiNbO 3), a piezoelectric crystal or the like, alumina (Al 2 O 3), magnesia, silicon nitride (SiN), aluminum nitride (AlN) , Silicon Carbide (SiC), Zirconia (ZrO 2 ), Cojilite, Murite, Steatite, Forsterite and other ceramics, Dielectrics such as glass or Silicones (Si), Sapphire, Gallium nitride (GaN) and other semiconductors. It is formed of a resin substrate or the like.
  • a laminate 105 composed of a piezoelectric layer 130 and an intermediate layer 140 is formed on a part of the upper surface 111 of the support substrate 110, and at least one functional element 120 is formed on the upper surface 131 of the piezoelectric layer 130.
  • the piezoelectric layer 130 is formed of, for example, a piezoelectric single crystal material such as lithium tantalate, lithium niobate, zinc oxide (ZnO), aluminum nitride, or lead zirconate titanate (PZT), or a piezoelectric laminated material thereof. ..
  • the functional element 120 includes an elastic wave resonator composed of a comb-shaped IDT electrode.
  • a surface acoustic wave (SAW) resonator is formed by the piezoelectric layer 130 and the functional element 120.
  • the functional element 120 includes aluminum (Al), copper (Cu), silver (Ag), gold (Au), titanium (Ti), tungsten (W), platinum (Pt), chromium (Cr), nickel (Ni), and the like. It can be formed by using a single metal composed of at least one of molybdenum (Mo) or a metal material such as an alloy containing these as a main component. Further, the functional element 120 may have a structure in which a plurality of metal films made of these metals or alloys are laminated.
  • the intermediate layer 140 includes a hypersonic layer 142 arranged on the upper surface 111 of the support substrate 110 and a low sound layer 141 arranged on the high sound layer 142.
  • the hypersonic layer 142 is configured to propagate an elastic bulk wave faster than the velocity of the elastic wave propagating to the piezoelectric layer 130.
  • Examples of the treble layer 142 include a DLC (Diamond-like Carbon) film, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, lithium tantalate, lithium niobate, piezoelectric materials such as crystal, alumina, and zirconia.
  • Kojilite, Murite, Steatite, Forsterite and other ceramics, magnesia diamond, or a material containing each of the above materials as a main component, or a material containing a mixture of the above materials as a main component can be used. ..
  • the bass velocity layer 141 is configured to propagate an elastic bulk wave that is slower than the velocity of the elastic wave propagating to the piezoelectric layer 130.
  • the low sound velocity layer 141 for example, one of silicon oxide, glass, silicon nitride, tantalum oxide, a compound obtained by adding fluorine, carbon or boron to silicon oxide, or a material containing each of the above materials as a main component is used. Can be done.
  • the energy of the elastic wave is effectively transferred into the piezoelectric layer 130 by reflecting the elastic wave excited by the functional element 120 to the piezoelectric layer 130 by the sound velocity difference generated at the boundary between the low sound velocity layer 141 and the high sound velocity layer 142. Can be trapped.
  • the intermediate layer 140 includes one low sound speed layer 141 and one high sound speed layer 142 has been described, but the intermediate layer 140 includes a plurality of low sound speed layers.
  • the structure may be such that 141 and the hypersonic layer 142 are alternately laminated.
  • an adhesive layer may be provided between the low sound velocity layer 141 and the high sound velocity layer 142.
  • the insulating layer 150 is formed in the region where the laminated body 105 is not formed.
  • the insulating layer 150 is arranged on the support substrate 110 so as to be in contact with the side surface of the laminated body 105.
  • the insulating layer 150 is arranged so as to be in contact with the surface (side surface) of the laminated body 105 connecting the surface (upper surface) on which the functional element 120 is formed and the surface (lower surface) in contact with the support substrate 110.
  • the insulating layer 150 is formed of, for example, a resin containing epoxy, polyimide, acrylic, urethane or the like as a main component.
  • the insulating layer 150 has a first region AR1 formed thinner than the thickness (dimension in the Z direction) of the laminated body 105, and a second region connecting the first region AR1 and the laminated body 105. It is formed including AR2.
  • the upper surface of the second region AR2 is inclined from the first region AR1 toward the upper surface of the laminated body 105 (that is, the upper surface 131 of the piezoelectric layer 130) (inclined portion 155).
  • the upper end of the contact surface of the insulating layer 150 with the laminated body 105 is at the same level as the upper surface 131 of the piezoelectric layer 130. That is, the second region AR2 of the insulating layer 150 does not overlap the surface on which the functional element is formed in the piezoelectric layer 130.
  • the cover layer 175 is supported by the support layer 170 at a position separated from the functional element 120.
  • the cover layer 175 is formed of, for example, a resin containing epoxy, polyimide, acrylic, urethane or the like as a main component.
  • the support layer 170 is arranged on the upper surface of the insulating layer 150 so as to surround the periphery of the laminate 105.
  • the support layer 170 is formed of, for example, a resin containing an organic material such as polyimide, epoxy resin, ring olefin resin, benzocyclobutene, polybenzoxazole, phenol resin, silicone, or acrylic resin.
  • the support layer 170 and the cover layer 175 form a hollow space 190 between the laminate 105 and the cover layer 175.
  • a functional element 120 is formed inside the hollow space 190.
  • a columnar electrode 180 is formed through the support layer 170 and the cover layer 175.
  • the first end portion 181 of the columnar electrode 180 on the cover layer 175 side is connected to the connection electrode 185 for connecting to an external device.
  • the second end 182 of the columnar electrode 180 is electrically connected to the wiring electrode 160 formed on the upper surface of the insulating layer 150.
  • the wiring electrode 160 is formed from the upper surface of the insulating layer 150 to the upper surface of the piezoelectric layer 130, and is connected to the functional element 120 formed on the piezoelectric layer 130.
  • the functional element 120 and the connection electrode 185 are electrically connected by the wiring electrode 160 and the columnar electrode 180.
  • a wiring electrode 161 is formed on the upper surface 131 of the piezoelectric layer 130.
  • the functional elements 120 are electrically connected to each other by the wiring electrodes 161.
  • FIG. 3 is a partial cross-sectional view of the piezoelectric device 100 # of the comparative example.
  • a part of the insulating layer 150 # reaches the upper surface 131 of the piezoelectric layer 130, that is, the second region AR2 of the insulating layer 150 # is The difference is that it overlaps with the piezoelectric layer 130.
  • the wiring electrode 160 # is formed from the upper surface of the insulating layer 150 # to the upper surface of the piezoelectric layer 130.
  • the X-axis direction with respect to the inclined portion 155 # of the second region AR2 in the piezoelectric device 100 # when the boundary between the first region AR1 and the second region AR2 is at the same distance from the laminated body, the X-axis direction with respect to the inclined portion 155 # of the second region AR2 in the piezoelectric device 100 #.
  • the inclination angle ⁇ 2 from is larger than the inclination angle ⁇ 1 of the inclination portion 155 in the piezoelectric device 100 ( ⁇ 1 ⁇ 2).
  • the bending angle of the wiring electrode 160 # at the boundary between the first region AR1 and the second region AR2 also becomes larger in the comparative example. Then, stress is concentrated on the bent portion, cracks may occur in the wiring electrode 160 # at the bent portion, and the wiring electrode 160 # may be broken.
  • the piezoelectric device 100 of the first embodiment since the inclination angle of the inclined portion 155 is smaller than that of the comparative example, the stress concentration on the bent portion of the wiring electrode 160 is relaxed as compared with the case of the comparative example. Therefore, in the piezoelectric device 100 of the first embodiment, it is possible to suppress the disconnection of the wiring electrode 160 due to bending.
  • the inclination angle ⁇ 1 of the inclined portion 155 is preferably in the range of 0 ° ⁇ 1 ⁇ 45 °.
  • the side surface of the laminate formed by the piezoelectric layer and the intermediate layer is formed so as to be perpendicular to the support substrate.
  • the second embodiment a configuration in which the side surface of the laminated body is formed so as to be inclined with respect to the support substrate will be described.
  • FIG. 4 is a partial cross-sectional view of the piezoelectric device 100A according to the second embodiment.
  • the side surfaces of the piezoelectric layer 130A and the intermediate layer 140A (hypersonic layer 141A, hypersonic layer 142A) forming the laminate 105A that come into contact with the insulating layer 150 are inclined with respect to the support substrate 110. It has become. More specifically, the dimensions of the piezoelectric layer 130A and the intermediate layer 140A in the X-axis direction and the Y-axis direction are formed so as to increase from the upper surface 131A of the piezoelectric layer 130A toward the support substrate 110.
  • the upper end of the portion in contact with the laminated body 105A is set to the same level as the upper surface 131A of the piezoelectric layer 130A.
  • tensile stress acts on the wiring electrodes formed from the insulating layer to the piezoelectric layer, which may cause disconnection.
  • the contact area between the laminate 105A and the insulating layer 150 is increased by making the side surface of the laminate 105A inclined like the piezoelectric device 100A, the insulating layer 150 is difficult to peel off from the laminate 105A. Become.
  • the side surface of the laminate is perpendicular to the support substrate
  • the insulating layer 150 is formed on the support substrate 110
  • the side surface of the laminate and the support substrate are insulated from each other (region RG1 in FIG. 4).
  • the body may not be fully filled and air bubbles may remain.
  • the adhesive strength of the insulating layer 150 may be weakened and the insulating layer 150 may be easily peeled off.
  • the piezoelectric device 100A of the second embodiment by inclining the side surface of the laminated body 105A, the insulator easily flows into the portion of the region RG1 and the generation of air bubbles is suppressed, so that the insulating layer It is possible to suppress a decrease in the adhesive strength of 150.
  • the peeling of the insulating layer 150 is suppressed by expanding the contact area between the insulating layer 150 and the laminated body 105A and suppressing air bubbles in the insulating body, and as a result, the insulating layer 150 is insulated. It is possible to suppress disconnection of the wiring electrode 160 caused by peeling of the layer 150.
  • insulators that form an insulating layer have the property of easily absorbing moisture contained in the surrounding environment. When such an insulating layer comes into contact with the piezoelectric layer, the characteristics of the piezoelectric layer may be deteriorated due to the moisture in the insulating layer, and the characteristics of the elastic wave resonator may be deteriorated.
  • the contact portion between the insulating layer and the piezoelectric layer is reduced to suppress deterioration of the characteristics of the elastic wave resonator due to moisture absorption of the insulating layer.
  • FIG. 5 is a partial cross-sectional view of the piezoelectric device 100B according to the third embodiment.
  • the piezoelectric layer 130B and the intermediate layer 140B (hypersonic layer 141B, hypersonic layer 142B) forming the laminate 105B come into contact with the insulating layer 150B.
  • the side surface is inclined with respect to the support substrate 110.
  • the upper end of the contact surface of the insulating layer 150B with the laminated body 105B is in contact with the laminated body 105B at a position closer to the support substrate 110 than the upper surface 131B of the piezoelectric layer 130B.
  • the upper end of the contact surface in the insulating layer 150B is in contact with the piezoelectric layer 130B between the upper surface 131B and the lower surface 132B of the piezoelectric layer 130B.
  • the distance from the upper surface 131B of the upper end of the contact surface of the insulating layer 150B is preferably in the range of 10 to 50% of the thickness (dimension in the Z-axis direction) of the piezoelectric layer 130B.
  • the contact area between the insulating layer and the piezoelectric layer can be reduced, so that deterioration of the characteristics of the piezoelectric layer can be suppressed even when the insulating layer absorbs moisture. .. Therefore, it is possible to suppress deterioration of the characteristics of the elastic wave resonator due to moisture absorption of the insulating layer.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
PCT/JP2021/014486 2020-04-10 2021-04-05 圧電デバイス Ceased WO2021206050A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022514061A JP7459936B2 (ja) 2020-04-10 2021-04-05 圧電デバイス
CN202180023499.6A CN115349226B (zh) 2020-04-10 2021-04-05 压电器件
US17/960,161 US20230027753A1 (en) 2020-04-10 2022-10-05 Piezoelectric device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-071025 2020-04-10
JP2020071025 2020-04-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/960,161 Continuation US20230027753A1 (en) 2020-04-10 2022-10-05 Piezoelectric device

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WO2021206050A1 true WO2021206050A1 (ja) 2021-10-14

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PCT/JP2021/014486 Ceased WO2021206050A1 (ja) 2020-04-10 2021-04-05 圧電デバイス

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US (1) US20230027753A1 (https=)
JP (1) JP7459936B2 (https=)
CN (1) CN115349226B (https=)
WO (1) WO2021206050A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116722838B (zh) * 2023-06-29 2024-08-02 北京超材信息科技有限公司 声表面波滤波器及组、多工器及射频模组
CN120675527A (zh) * 2024-09-25 2025-09-19 华为技术有限公司 压电器件及其制备方法、电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098678A1 (ja) * 2013-12-27 2015-07-02 株式会社村田製作所 弾性波装置
JP2019179961A (ja) * 2018-03-30 2019-10-17 株式会社村田製作所 弾性波装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5807715B2 (ja) * 2012-03-23 2015-11-10 株式会社村田製作所 弾性波フィルタ素子及びその製造方法
KR101929333B1 (ko) * 2015-06-25 2018-12-14 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치
KR102369436B1 (ko) * 2017-04-19 2022-03-03 삼성전기주식회사 체적 음향 공진기

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098678A1 (ja) * 2013-12-27 2015-07-02 株式会社村田製作所 弾性波装置
JP2019179961A (ja) * 2018-03-30 2019-10-17 株式会社村田製作所 弾性波装置

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JP7459936B2 (ja) 2024-04-02
JPWO2021206050A1 (https=) 2021-10-14
CN115349226B (zh) 2025-12-16
CN115349226A (zh) 2022-11-15
US20230027753A1 (en) 2023-01-26

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