JP5807715B2 - 弾性波フィルタ素子及びその製造方法 - Google Patents
弾性波フィルタ素子及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 137
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052582 BN Inorganic materials 0.000 claims description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 238000010897 surface acoustic wave method Methods 0.000 description 66
- 239000010408 film Substances 0.000 description 24
- 238000005530 etching Methods 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- -1 LiTaO 3 Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
11a…送信側弾性表面波フィルタチップ
11b…受信側弾性表面波フィルタチップ
12…支持基板
13…誘電体層
14…圧電体層
14A…圧電基板
14a…高濃度イオン注入部分
15…IDT電極
16…電極ランド
17…保護膜
18…圧電基板
19…IDT電極
20…実装基板
20a、20b…電極ランド
30…絶縁材
31…保護部
32…絶縁板
41…エッチング層
43…仮支持部材
50…保護材
60…半導体チップ
Claims (10)
- 絶縁板と、前記絶縁板上に設けられた送信側弾性波フィルタチップと、受信側弾性波フィルタチップを備え、
前記送信側弾性波フィルタチップは、
前記絶縁板上に設けられており、かつ、絶縁性材料からなる支持基板と、
前記支持基板により直接または間接的に支持されている圧電体層と、
前記圧電体層に接するように設けられたIDT電極と、
を有し、
前記受信側弾性波フィルタチップは、
前記絶縁板の上に設けられた圧電基板と、
前記圧電基板の上に設けられたIDT電極と、
を有し、
前記支持基板の熱伝導率が前記圧電体層及び前記圧電基板のいずれの熱伝導率よりも高く、
前記絶縁板の熱伝導率は、前記圧電体層及び前記圧電基板の熱伝導率よりも高い、弾性波フィルタ素子。 - 前記送信側弾性波フィルタチップ及び前記受信側弾性波フィルタチップがフェースダウンで実装されている実装基板をさらに有する、請求項1に記載の弾性波フィルタ素子。
- 前記支持基板の熱膨張係数が前記圧電体層の熱膨張係数よりも小さい、請求項1または2に記載の弾性波フィルタ素子。
- 前記支持基板が、酸化アルミニウム、窒化アルミニウム、窒化ホウ素、炭化ケイ素、シリコン及び酸化マグネシウムからなる群から選択された少なくとも1種の材料からなる、請求項1〜3のいずれか一項に記載の弾性波フィルタ素子。
- 前記絶縁板上に設けられており、前記支持基板及び前記圧電体層の側面と、前記圧電基板の側面とを覆い、前記支持基板の前記実装基板とは反対側の表面の少なくとも一部と、前記圧電基板の前記実装基板とは反対側の表面の少なくとも一部とが露出するように設けられた保護部をさらに備え、前記絶縁板及び前記保護部が絶縁材を構成しており、
前記絶縁板は、前記支持基板の前記保護部から露出した表面上と、前記圧電基板の前記保護部から露出した表面上とに跨がるように設けられている、請求項1〜4のいずれか一項に記載の弾性波フィルタ素子。 - 前記絶縁板が、酸化アルミニウム、窒化アルミニウム、窒化ホウ素、炭化ケイ素、酸化マグネシウム及びシリコンからなる群から選ばれた少なくとも一種からなる、請求項5に記載の弾性波フィルタ素子。
- 前記IDT電極が、アルミニウムを主成分としたエピタキシャル膜を含む、請求項1〜6のいずれか一項に記載の弾性波フィルタ素子。
- 前記送信側弾性波フィルタチップが、ラダー型弾性波フィルタチップであり、
前記受信側弾性波フィルタチップが、縦結合共振子型弾性波フィルタチップである、請求項1〜7のいずれか一項に記載の弾性波フィルタ素子。 - 請求項1〜8のいずれか1項に記載の弾性波フィルタ素子の製造方法であって、
圧電基板の一方面からイオン注入する工程と、
前記イオン注入された前記圧電基板の前記一方面に仮支持部材を積層する工程と、
前記仮支持部材が積層された圧電基板を加熱しつつ、前記圧電基板の注入イオン濃度が最も高い高濃度イオン注入部分において前記圧電基板を分断することにより前記仮支持部材上に、前記送信側弾性波フィルタチップで用いられる前記圧電体層を形成する工程と、
前記圧電体層の前記仮支持部材とは反対側の面に、直接または間接的に支持基板を積層する工程と、
前記支持基板に直接または間接的に積層された圧電体層から前記仮支持部材を分離する工程と、
前記支持基板の前記圧電体層が積層された側とは反対側の面に前記絶縁板を設ける工程と、
を備える、弾性波フィルタ素子の製造方法。 - 前記圧電体層上に前記圧電体層よりも熱伝導率が高い誘電体層を形成し、前記誘電体層上に前記支持基板を積層する、請求項9に記載の弾性波フィルタ素子の製造方法。
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PCT/JP2013/057569 WO2013141184A1 (ja) | 2012-03-23 | 2013-03-16 | 弾性波フィルタ素子及びその製造方法 |
JP2014506213A JP5807715B2 (ja) | 2012-03-23 | 2013-03-16 | 弾性波フィルタ素子及びその製造方法 |
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US (1) | US9374062B2 (ja) |
JP (1) | JP5807715B2 (ja) |
CN (1) | CN104205633B (ja) |
WO (1) | WO2013141184A1 (ja) |
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KR101958132B1 (ko) * | 2015-03-16 | 2019-03-13 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치 및 그 제조 방법 |
CN104858122B (zh) * | 2015-04-15 | 2017-04-05 | 清华大学 | 弹性波模式分离方法及弹性波模式分离系统 |
KR102217746B1 (ko) | 2016-10-28 | 2021-02-19 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치 |
US20180123561A1 (en) * | 2016-10-31 | 2018-05-03 | Samsung Electro-Mechanics Co., Ltd. | Filter |
JP6743911B2 (ja) * | 2016-12-21 | 2020-08-19 | 株式会社村田製作所 | 弾性波装置の製造方法、弾性波装置、高周波フロントエンド回路、及び通信装置 |
KR102254688B1 (ko) * | 2016-12-27 | 2021-05-21 | 가부시키가이샤 무라타 세이사쿠쇼 | 멀티플렉서, 고주파 프론트 엔드 회로 및 통신 장치 |
US11558029B2 (en) | 2017-09-14 | 2023-01-17 | Kyocera Corporation | Acoustic wave device and communication apparatus |
DE102018108605A1 (de) * | 2018-04-11 | 2019-10-17 | RF360 Europe GmbH | SAW-Resonator mit verbesserter Leistungsbeständigkeit und Wärmeresistenz und SAW-Resonator umfassendes HF-Filter |
TWI811431B (zh) * | 2018-08-22 | 2023-08-11 | 美商天工方案公司 | 多層壓電基板 |
CN110138356B (zh) * | 2019-06-28 | 2020-11-06 | 中国科学院上海微系统与信息技术研究所 | 一种高频声表面波谐振器及其制备方法 |
WO2022187158A1 (en) * | 2021-03-02 | 2022-09-09 | Frore Systems Inc. | Mounting and use of piezoelectric cooling systems in devices |
CN113904652A (zh) * | 2021-09-13 | 2022-01-07 | 南方科技大学 | 兰姆波谐振器及其制备方法 |
WO2023190721A1 (ja) * | 2022-03-31 | 2023-10-05 | 株式会社村田製作所 | 弾性波装置 |
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JP3982876B2 (ja) | 1997-06-30 | 2007-09-26 | 沖電気工業株式会社 | 弾性表面波装置 |
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JP3735550B2 (ja) | 2001-09-21 | 2006-01-18 | Tdk株式会社 | 弾性表面波装置およびその製造方法 |
JP4096787B2 (ja) * | 2003-04-11 | 2008-06-04 | 株式会社村田製作所 | 弾性表面波素子の製造方法 |
KR101148587B1 (ko) | 2007-12-25 | 2012-05-23 | 가부시키가이샤 무라타 세이사쿠쇼 | 복합 압전 기판의 제조 방법 |
WO2009104438A1 (ja) * | 2008-02-18 | 2009-08-27 | 株式会社 村田製作所 | 弾性波装置及びその製造方法 |
JP4816710B2 (ja) * | 2008-10-30 | 2011-11-16 | 株式会社村田製作所 | 分波器 |
JP4821834B2 (ja) * | 2008-10-31 | 2011-11-24 | 株式会社村田製作所 | 圧電性複合基板の製造方法 |
KR20110020741A (ko) * | 2009-08-24 | 2011-03-03 | 엔지케이 인슐레이터 엘티디 | 복합 기판의 제조 방법 |
JP5341006B2 (ja) * | 2010-03-30 | 2013-11-13 | 新科實業有限公司 | 弾性表面波装置 |
JP5429200B2 (ja) | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | 複合圧電基板の製造方法および圧電デバイス |
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