WO2021195973A1 - 显示面板及其制作方法、显示装置 - Google Patents

显示面板及其制作方法、显示装置 Download PDF

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Publication number
WO2021195973A1
WO2021195973A1 PCT/CN2020/082470 CN2020082470W WO2021195973A1 WO 2021195973 A1 WO2021195973 A1 WO 2021195973A1 CN 2020082470 W CN2020082470 W CN 2020082470W WO 2021195973 A1 WO2021195973 A1 WO 2021195973A1
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WO
WIPO (PCT)
Prior art keywords
base substrate
display
layer
display panel
substrate
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PCT/CN2020/082470
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English (en)
French (fr)
Inventor
张逵
刘李
卢鹏程
李云龙
张大成
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2020/082470 priority Critical patent/WO2021195973A1/zh
Priority to CN202080000440.0A priority patent/CN113826232B/zh
Priority to US17/258,614 priority patent/US20210305535A1/en
Publication of WO2021195973A1 publication Critical patent/WO2021195973A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • the present disclosure relates to the field of display technology, in particular to a display panel, a manufacturing method thereof, and a display device.
  • Silicon-based organic light-emitting diodes are micro-displays developed in recent years. With mature silicon-based semiconductor manufacturing processes, organic light-emitting diode displays with high display density and high refresh rate can be fabricated for use in virtual reality or augmented reality.
  • the embodiments of the present disclosure provide a display panel, a manufacturing method thereof, and a display device.
  • a display panel including:
  • a display substrate which includes a base substrate, a driving transistor embedded on the base substrate, and a first electrode layer on the base substrate.
  • the first electrode layer is connected to the driving transistor.
  • An encapsulation protection structure located on the display substrate, the encapsulation protection structure surrounding the display area of the display substrate;
  • a light-emitting layer located on a side of the first electrode layer away from the base substrate;
  • a second electrode layer located on the side of the light-emitting layer away from the base substrate;
  • the first packaging layer is located on the side of the second electrode layer away from the base substrate.
  • the width of the package protection structure in a first direction is greater than 1 um, and the first direction is perpendicular to the extension direction of the package protection structure and parallel to the base substrate.
  • the shortest distance between the inner contour of the orthographic projection of the package protection structure on the base substrate and the outer contour of the orthographic projection of the display area on the base substrate is 100-200um .
  • the thickness of the package protection structure is 0.5-2.5 um.
  • the package protection structure uses photoresist.
  • it further includes:
  • a color filter layer located on the side of the first packaging layer away from the base substrate;
  • a second encapsulation layer located on the side of the color filter layer away from the base substrate;
  • a packaging cover plate located on a side of the second packaging layer away from the base substrate.
  • the embodiment of the present disclosure also provides a display device, including the above-mentioned display panel.
  • the embodiment of the present disclosure also provides a manufacturing method of a display panel, including:
  • a display substrate is provided.
  • the display substrate includes a base substrate, a driving transistor embedded on the base substrate, and a first electrode layer located on the base substrate. The first pole of the transistor is connected;
  • the transition structure is burnt with a laser, and the transition structure explodes after absorbing heat, exposing the binding area.
  • the method further includes:
  • a second encapsulation layer covering the display area and the binding area is formed.
  • forming the package protection structure and the transition structure includes:
  • the package protection structure and the transition structure are formed through one patterning process.
  • the transition structure and the packaging protection structure are an integral structure.
  • the first orthographic projection of the binding area on the base substrate is located in the second orthographic projection of the transition structure on the base substrate, and the first orthographic projection is outside the first orthographic projection of the transition structure on the base substrate.
  • the minimum distance between the contour and the outer contour of the second orthographic projection is 5-10um.
  • the wavelength of the laser is 235-550 nm.
  • the first orthographic projection of the binding area on the base substrate is located within the laser spot, and the outer contour of the first orthographic projection is between the outer contour of the spot The minimum distance is 5 ⁇ 10um.
  • FIG. 1 is a schematic plan view of a display panel according to an embodiment of the disclosure
  • 2-7 are schematic diagrams of the process of manufacturing a display panel according to the embodiments of the present disclosure.
  • the manufacturing process of a silicon-based OLED (organic electroluminescent diode) display device is divided into a front stage and a back stage.
  • the first stage is to prepare the first electrode layer of the OLED display device on the base substrate to obtain the display substrate; the latter stage is on the display substrate Prepare the light-emitting layer, the second electrode layer, the encapsulation layer, the color film layer, the encapsulation cover, etc., and bind the PCB (printed circuit board) and/or FPC (flexible circuit board) to the display substrate.
  • PCB printed circuit board
  • FPC flexible circuit board
  • the bonding pins of the display substrate need to be exposed.
  • the display substrate includes a base substrate 1 and a multi-layer metal lead set on the base substrate 1, where 6 is the first metal lead layer farthest from the base substrate 1, and the first metal lead layer 6 includes bonding pins 7 located in bonding area A. Since the pixel size of the display device is very small, the light-emitting layer and the encapsulation layer are prepared on the entire surface in the subsequent production.
  • the encapsulation layer that encapsulates the display panel will cover the display area and the binding area of the display substrate, but the PCB and/ Or when bonding the FPC, the pins of the bonding area need to be exposed, so before bonding, the encapsulation layer of the bonding area needs to be removed.
  • a photoresist covering the binding area can be formed before the light-emitting layer is evaporated.
  • a laser is used to ablate the photoresist. It has strong absorption to the laser, which can make the photoresist absorb the heat of the laser and explode, thereby exposing the pins in the binding area, but there will be photoresist residue on the edge of the area after the laser burn, which affects the compactness of the package.
  • the original package layer is affected to produce cracks, which is not conducive to water and oxygen isolation, and also affects the compactness of the package.
  • the embodiments of the present disclosure provide a display panel, a manufacturing method thereof, and a display device, which can ensure the packaging compactness of the display panel and improve the service life of the display panel.
  • FIG. 7 is a schematic cross-sectional view of FIG. 1 in the CC direction, including:
  • the display substrate includes a base substrate 1, a driving transistor embedded on the base substrate 1, and a first electrode layer on the base substrate 1.
  • the first electrode layer includes a plurality of mutually independent anode patterns 8. The first electrode layer is connected to the first electrode of the driving transistor;
  • the light-emitting layer 15 located on the side of the first electrode layer away from the base substrate 1;
  • the second electrode layer 16 located on the side of the light-emitting layer 15 away from the base substrate 1;
  • the first encapsulation layer 17 located on the side of the second electrode layer 16 away from the base substrate 1.
  • a driving transistor is provided in the base substrate 1, wherein 2 is the source of the driving transistor and 3 is the drain of the driving transistor.
  • a multi-layer metal lead and an insulating layer 11 covering the multi-layer metal lead are formed on the base substrate 1.
  • FIG. 7 only shows the first metal lead layer 6 furthest from the base substrate 1.
  • the first metal lead layer 6 is connected to the source 2, the drain 6 and the polysilicon gate 4 of the driving transistor through the conductive connection line 5.
  • the polysilicon gate 4 is a layer of polysilicon grown by molecular beam epitaxy. This layer is conductive and can be used as a thin film transistor ⁇ Grid.
  • the first electrode layer is connected to the first electrode of the driving transistor through the first metal lead layer 6, and the first electrode may be the source 2, the drain 6 and the polysilicon gate 4 of the driving transistor.
  • the first electrode layer is one of the anode layer and the cathode layer
  • the second electrode layer is the other of the anode layer and the cathode layer
  • the base substrate 1 may specifically be a wafer.
  • the display substrate includes a display area B and a bonding area A.
  • the part of the first metal lead layer 6 located in the bonding area A is the bonding pin 7.
  • the bonding pin 7 is required Bare.
  • an encapsulation protection structure 14 surrounding the display area B of the display substrate is provided, which can protect the periphery of the display area and improve the reliability of the package; after the encapsulation layer is formed, a laser is used to ablate the light in the binding area A
  • the compactness of the package can be guaranteed due to the existence of the package protection structure 14; in addition, if the package layer at the edge of the laser ablated area is affected If cracks occur, due to the existence of the package protection structure 14, water and oxygen can still be prevented from invading the display area B, and the compactness of the package can be ensured.
  • the display panel further includes a color filter layer 18 located on the side of the first packaging layer 17 away from the base substrate 1, and a second packaging layer 19 located on the side of the color filter layer 18 away from the base substrate 1.
  • the two encapsulation layers 19 are away from the encapsulation cover 20 on the side of the base substrate 1.
  • the color film layer 18 may include a plurality of filter units of different colors, such as a red filter unit R, a green filter unit G, and a blue filter unit B.
  • the color film layer 18 can realize the colorization of the light emitted from the display panel. Realize color display.
  • the first encapsulation layer 17 may use one or a combination of SiNX, SiO 2 , organics, and Al 2 O 3.
  • the first encapsulation layer 17 may include an SiOx layer, an organic layer, and Al 2 O 3 layer.
  • the second encapsulation layer 19 may use one or a combination of SiNX, SiO 2 , organics, and Al 2 O 3.
  • the second encapsulation layer 19 may include an SiOx layer, an organic layer, and Al 2 stacked in sequence. O 3 layers.
  • the packaging cover 20 may specifically be a glass cover.
  • the width S of the package protection structure 14 in the first direction may be greater than 1 um, and the thickness of the package protection structure 14 may be 0.5-2.5 um, wherein the first direction is perpendicular to the extension direction of the package protection structure 14 And it is parallel to the base substrate 1.
  • the shape of the package protection structure 14 is ring-shaped, as long as the package protection structure 14 can surround the display area B. Since the display area B is generally rectangular, the package protection structure 14 may be a square ring. Of course, the package protection structure 14 does not It is not limited to a square ring shape, and other shapes are also possible.
  • the package protection structure 14 needs to be separated from the display area B at a certain distance.
  • the inner contour of the orthographic projection of the package protection structure 14 on the base substrate 1 and the outer contour of the orthographic projection of the display area B on the base substrate 1 The shortest distance d can be greater than 100um.
  • the value of d can be less than 200um.
  • the package protection structure 14 can also use photoresist, so that the package protection structure 14 and the photoresist in the bonding area A can be patterned at the same time. Forming, there is no need to add an additional patterning process to specially manufacture the package protection structure 14, which can reduce the number of patterning processes for manufacturing the display panel.
  • the encapsulation protection structure 14 may adopt a positive photoresist or a negative photoresist.
  • the embodiment of the present disclosure also provides a manufacturing method of a display panel, including:
  • a display substrate includes a base substrate, a driving transistor embedded on the base substrate, and a first electrode layer on the base substrate.
  • the transition structure bursts after absorbing heat, exposing the binding area.
  • an encapsulation protection structure 14 surrounding the display area B of the display substrate is provided, which can protect the periphery of the display area and improve the reliability of the package; after the encapsulation layer is formed, a laser is used to ablate the light in the binding area A
  • the compactness of the package can be guaranteed due to the existence of the package protection structure 14; in addition, if the package layer at the edge of the laser ablated area is affected If cracks occur, due to the existence of the package protection structure 14, water and oxygen can still be prevented from invading the display area B, and the compactness of the package can be ensured.
  • the manufacturing method of the display panel includes the following steps:
  • Step 1 As shown in FIG. 2, a multilayer metal lead is formed on the base substrate 1, and the multilayer metal lead includes a first metal lead layer 6;
  • FIG. 2 is a schematic cross-sectional view of FIG. 1 in the CC direction.
  • FIG. 2 only shows the first metal lead layer 6 farthest from the base substrate 1.
  • the source 2, the drain 6 and the polysilicon gate 4 of the transistor are connected.
  • the polysilicon gate 4 is a layer of polysilicon grown by molecular beam epitaxy. This layer is conductive and can be used as the gate of a thin film transistor.
  • the first electrode layer of the display panel is connected to the first electrode of the driving transistor through the first metal lead layer 6, and the first electrode may be the source 2, the drain 6 and the polysilicon gate 4 of the driving transistor.
  • the base substrate 1 may specifically be a wafer.
  • the display substrate includes a display area B and a bonding area A.
  • the part of the first metal lead layer 6 located in the bonding area A is the bonding pin 7.
  • the bonding pin 7 is required Bare.
  • the first metal lead 6 can be made of a metal with good electrical conductivity, and the thickness is generally 300-5000 angstroms, and specifically can be 350 angstroms.
  • Step 2 As shown in FIG. 2, a first sub-insulating layer 111 covering the first metal lead layer 6 is formed;
  • the first sub-insulating layer 111 may be silicon nitride, silicon oxide, or silicon oxynitride, with a thickness of 500-5000 angstroms.
  • Step 3 As shown in Fig. 2, a reflection pattern 12 is formed
  • the anode pattern 8 of the display panel can be made of light-transmitting material, in order to increase the efficiency of light extraction, a reflective layer can be formed in the display area B of the display substrate.
  • the anode patterns 8 have a one-to-one correspondence.
  • the orthographic projection of the reflective pattern 12 on the base substrate 1 and the orthographic projection of the corresponding anode pattern 8 on the base substrate 1 have overlapping areas. Reflected to the light-emitting side to increase the light-emitting efficiency of the display panel.
  • the reflective pattern 12 does not participate in conduction, and the position of the reflective pattern 12 needs to avoid the area where the via is to be formed.
  • Step 4 As shown in FIG. 2, a second sub-insulating layer 112 is formed;
  • the second sub-insulating layer 112 may be silicon nitride, silicon oxide, or silicon oxynitride, and the thickness may be set as required, and specifically may be 1000-15000 angstroms.
  • Step 5 As shown in FIG. 2, the insulating layer 11 is etched to form a via hole 10 located in the bonding area, and the via hole 10 exposes the bonding pin 7;
  • Step 6 As shown in FIG. 2, an anode pattern 8 is formed on the insulating layer 11;
  • an anode material layer may be formed on the insulating layer 11, and the anode material layer may be patterned to form a plurality of independent anode patterns 8 located in the display area B.
  • Each anode pattern 8 passes through a conductive pillar 9 and a first metal lead. Layer 6 connection.
  • the reflection pattern 12 corresponds to the anode pattern 8 one-to-one, and the outer contour of the orthographic projection of the reflection pattern 12 on the base substrate 1 may coincide with the outer contour of the orthographic projection of the corresponding anode pattern 8 on the base substrate 1.
  • Step 7 As shown in FIG. 3, a layer of photoresist is coated on the display substrate on which the anode pattern 8 is formed, and the photoresist is exposed and developed to form a transition structure 13 covering the binding area A and surrounding the display area B ⁇ encapsulation protection structure 14;
  • the photoresist can be either a positive photoresist or a negative photoresist, and the thickness of the photoresist can be 0.5-2.5 um.
  • the transition structure 13 and the encapsulation protection structure 14 may be an integral structure, or may be separate.
  • the width S of the package protection structure 14 in the first direction may be greater than 1um, and the thickness of the package protection structure 14 may be 0.5-2.5um, where the first direction is perpendicular to the package
  • the extension direction of the protection structure 14 is parallel to the base substrate 1.
  • the shape of the package protection structure 14 is a ring, as long as the package protection structure 14 can surround the display area B. Since the display area B is generally rectangular, the package protection structure 14 may be a square ring. Of course, the package protection structure 14 does not It is not limited to a square ring shape.
  • the package protection structure 14 needs to be separated from the display area B at a certain distance.
  • the inner contour of the orthographic projection of the package protection structure 14 on the base substrate 1 and the outer contour of the orthographic projection of the display area B on the base substrate 1 The shortest distance d can be greater than 100um.
  • the value of d can be less than 200um.
  • Forming the transition structure 13 and the package protection structure 14 through one patterning process can strengthen and thicken the package layer without increasing the process, which can better isolate water and oxygen, which is beneficial to the improvement of the package reliability and life of the display device.
  • Step 8 As shown in FIG. 4, form the light-emitting layer 15, the second electrode layer 16, and the first encapsulation layer 17;
  • FIG. 4 is a schematic cross-sectional view in the CC direction of FIG.
  • the first encapsulation layer 17 covers the binding area A and the display area B.
  • One or a combination of SiNX, SiO 2 , organic matter, and Al 2 O 3 may be used.
  • the first encapsulation layer 17 may include Stacked SiOx layer, organic layer and Al 2 O 3 layer.
  • the thickness of the first encapsulation layer 17 can be designed as required.
  • Step 9 As shown in FIG. 5, a color film layer 18 and a second encapsulation layer 19 are formed;
  • FIG. 5 is a schematic cross-sectional view of FIG. 1 in the CC direction.
  • the color film layer 18 is located in the display area B, and may include multiple filter units of different colors, such as red filter unit R, green filter unit G, and blue.
  • the filter unit B can realize the colorization of the light emitted from the display panel through the color film layer 18.
  • the film forming order of the red filter unit R, the green filter unit G, and the blue filter unit B is not limited.
  • the second encapsulation layer 19 covers the binding area A and the display area B.
  • One or a combination of SiNX, SiO 2 , organic matter, and Al 2 O 3 may be used.
  • the second encapsulation layer 19 may include Stacked SiOx layer, organic layer and Al 2 O 3 layer.
  • the thickness of the second encapsulation layer 19 can be designed as required.
  • Step 10 remove the transition structure 13 of the binding area A;
  • FIG. 6 is a schematic cross-sectional view of FIG. 1 in the CC direction.
  • laser ablation can be performed on the transition structure 13 in the binding area to remove the transition structure 13 and other film layers above the binding area A, including the first The encapsulation layer 17 and the second encapsulation layer 19, the wavelength of the laser light can be 235 ⁇ 550nm, the transition structure 13 has strong absorption of the laser light of this wavelength, can explode after absorbing the heat of the laser, exposing the binding area Bind pin 7.
  • the first orthographic projection of the binding area A on the base substrate 1 is located within the laser spot, and the outer contour of the first orthographic projection is between the outer contour of the spot
  • the minimum distance is greater than 5um, which can ensure that the laser spot covers the binding area A; in addition, in order to avoid damage to other areas by the laser spot, the minimum distance between the outer contour of the first orthographic projection and the outer contour of the spot is less than 10um.
  • Step 11 As shown in FIG. 7, a package cover 20 is formed.
  • the package cover 20 can be a glass cover.
  • the display panel can be obtained, and then the FPC and/or PCB are attached to the display panel to complete the manufacture of the display device.
  • the package protection structure 14 can protect the display area B to prevent the heat generated by the laser from affecting the display area; in addition, even if the laser ablated
  • the first encapsulation layer 17 and the second encapsulation layer 19 at the edge of the area are affected to produce cracks, and the encapsulation protection structure 14 can also protect the display area B, prevent water and oxygen from invading the display area B, and ensure the compactness of the package.
  • the embodiment of the present disclosure also provides a display device, including the above-mentioned display panel.
  • the display device includes but is not limited to: radio frequency unit, network module, audio output unit, input unit, sensor, display unit, user input unit, interface unit, memory, processor, power supply and other components.
  • the structure of the above display device does not constitute a limitation on the display device, and the display device may include more or less of the above components, or combine some components, or arrange different components.
  • the display device includes, but is not limited to, a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.
  • the display device may be any product or component with a display function such as a TV, a monitor, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device also includes a flexible circuit board, a printed circuit board, and a backplane.
  • sequence number of each step cannot be used to limit the sequence of each step.
  • sequence of each step is changed without creative work. It is also within the protection scope of the present disclosure.

Abstract

一种显示面板及其制作方法、显示装置。显示面板，包括：显示基板，显示基板包括衬底基板（1）、嵌设在衬底基板（1）上的驱动晶体管和位于衬底基板（1）上的第一电极层；位于显示基板上的封装保护结构（14），封装保护结构（14）包围显示基板的显示区域（B）；位于第一电极层远离衬底基板（1）一侧的发光层（15）；位于发光层（15）远离衬底基板（1）一侧的第二电极层（16）；位于第二电极层（16）远离衬底基板（1）一侧的第一封装层（17）。显示面板的封装致密性得到有效保护，提高显示面板的寿命。

Description

显示面板及其制作方法、显示装置 技术领域
本公开涉及显示技术领域，特别是指一种显示面板及其制作方法、显示装置。
背景技术
硅基有机发光二极管是近年来发展起来的微型显示器，以成熟的硅基半导体工艺制程，可以制备高显示密度、高刷新频率的有机发光二极管显示器，应用在虚拟现实或增强现实领域中。
发明内容
本公开实施例提供一种显示面板及其制作方法、显示装置。
一方面，提供一种显示面板，包括：
显示基板，所述显示基板包括衬底基板、嵌设在所述衬底基板上的驱动晶体管和位于所述衬底基板上的第一电极层，所述第一电极层与所述驱动晶体管的第一极连接；
位于所述显示基板上的封装保护结构，所述封装保护结构包围所述显示基板的显示区域；
位于所述第一电极层远离所述衬底基板一侧的发光层；
位于所述发光层远离所述衬底基板一侧的第二电极层；
位于所述第二电极层远离所述衬底基板一侧的第一封装层。
一些实施例中，所述封装保护结构在第一方向上的宽度大于1um，所述第一方向垂直于所述封装保护结构的延伸方向且与所述衬底基板平行。
一些实施例中，所述封装保护结构在所述衬底基板上的正投影的内轮廓与所述显示区域在所述衬底基板上的正投影的外轮廓之间的最短距离为100-200um。
一些实施例中，所述封装保护结构的厚度为0.5-2.5um。
一些实施例中，所述封装保护结构采用光刻胶。
一些实施例中，还包括：
位于所述第一封装层远离所述衬底基板一侧的彩膜层；
位于所述彩膜层远离所述衬底基板一侧的第二封装层；
位于所述第二封装层远离所述衬底基板一侧的封装盖板。
本公开实施例还提供了一种显示装置，包括如上所述的显示面板。
本公开实施例还提供了一种显示面板的制作方法，包括：
提供一显示基板，所述显示基板包括衬底基板、嵌设在所述衬底基板上的驱动晶体管和位于所述衬底基板上的第一电极层，所述第一电极层与所述驱动晶体管的第一极连接；
形成包围所述显示基板的显示区域的封装保护结构以及覆盖所述显示基板的绑定区域的过渡结构；
形成覆盖所述显示区域的发光层；
形成覆盖所述显示区域的第二电极层；
形成覆盖所述显示区域和所述绑定区域的第一封装层；
利用激光烧灼所述过渡结构，所述过渡结构吸收热量后爆开，暴露出所述绑定区域。
一些实施例中，形成所述第一封装层之后，利用激光烧灼所述过渡结构之前，所述方法还包括：
形成覆盖所述显示区域的彩膜层；
形成覆盖所述显示区域和所述绑定区域的第二封装层。
一些实施例中，形成所述封装保护结构和所述过渡结构包括：
通过一次构图工艺形成所述封装保护结构和所述过渡结构。
一些实施例中，所述过渡结构与所述封装保护结构为一体结构。
一些实施例中，所述绑定区域在所述衬底基板上的第一正投影位于所述过渡结构在所述衬底基板上的第二正投影内，且所述第一正投影的外轮廓与所述第二正投影的外轮廓之间的最小距离为5～10um。
一些实施例中，所述激光的波长为235～550nm。
一些实施例中，所述绑定区域在所述衬底基板上的第一正投影位于所述激光的光斑内，且所述第一正投影的外轮廓与所述光斑的外轮廓之间的最小 距离为5～10um。
附图说明
图1为本公开实施例显示面板的平面示意图；
图2-图7为本公开实施例制作显示面板的流程示意图。
附图标记
1 衬底基板
2 源极
3 漏极
4 多晶硅栅极
5 导电连接线
6 第一金属引线层
7 绑定引脚
8 阳极图形
9 导电柱
10 过孔
11 绝缘层
111 第一子绝缘层
13 过渡结构
14 封装保护结构
15 发光层
16 阴极
17 第一封装层
18 彩膜层
19 第二封装层
20 封装盖板
具体实施方式
为使本公开的实施例要解决的技术问题、技术方案和优点更加清楚，下 面将结合附图及具体实施例进行详细描述。
硅基OLED(有机电致发光二极管)显示装置的制程分为前段和后段，前段即在衬底基板上制备OLED显示器件的第一电极层等，得到显示基板；后段即在显示基板上制备发光层、第二电极层、封装层、彩膜层以及封装盖板等，并将PCB(印刷电路板)和/或FPC(柔性电路板)与显示基板进行绑定。
其中，为了实现将PCB和/或FPC与显示基板进行绑定，需要裸露出显示基板的绑定引脚。如图1所示，显示基板包括衬底基板1和设置在衬底基板1上的多层金属引线，其中，6为距离衬底基板1最远的第一金属引线层，第一金属引线层6包括位于绑定区域A的绑定引脚7。由于显示装置的像素尺寸很小，在后段制作是整面制备发光层和封装层，对显示面板进行封装的封装层会覆盖显示基板的显示区域和绑定区域，但是在后续进行PCB和/或FPC的绑定时，需要暴露出绑定区域的引脚，所以在进行绑定之前，需要去除绑定区域的封装层。
为了在进行绑定之前去除绑定区域的封装层，可以在蒸镀发光层之前，形成覆盖绑定区域的光刻胶，在形成封装层之后，利用激光烧蚀光刻胶，由于光刻胶对激光具有很强的吸收性，可以使得光刻胶吸收激光的热量后爆开，进而暴露出绑定区域的引脚，但激光烧灼后的区域边缘会有光刻胶残留，影响封装的致密性；另外，在激光烧蚀过的区域边缘，原来的封装层被影响产生裂纹，不利于水氧隔绝，也会影响封装的致密性。
本公开实施例提供一种显示面板及其制作方法、显示装置，能够保证显示面板的封装致密性，提高显示面板的寿命。
本公开实施例提供一种显示面板，如图1和图7所示，其中，图7为图1在CC方向上的截面示意图，包括：
显示基板，显示基板包括衬底基板1、、嵌设在所述衬底基板1上的驱动晶体管和位于衬底基板1上的第一电极层，第一电极层包括多个相互独立的阳极图形8，所述第一电极层与所述驱动晶体管的第一极连接；
位于显示基板上的封装保护结构14，封装保护结构14包围显示基板的 显示区域B；
位于第一电极层远离衬底基板1一侧的发光层15；
位于发光层15远离衬底基板1一侧的第二电极层16；
位于第二电极层16远离衬底基板1一侧的第一封装层17。
如图7所示，在衬底基板1内设置有驱动晶体管，其中2为驱动晶体管的源极、3为驱动晶体管的漏极。在衬底基板1上形成有多层金属引线和覆盖多层金属引线的绝缘层11，图7中仅示出了距离衬底基板1最远的第一金属引线层6，第一金属引线层6通过导电连接线5与驱动晶体管的源极2、漏极6以及多晶硅栅极4连接，多晶硅栅极4为采用分子束外延处理长出的一层多晶硅，该层可导电，能够作为薄膜晶体管的栅极。第一电极层通过第一金属引线层6与驱动晶体管的第一极连接，第一极可以为驱动晶体管的源极2、漏极6以及多晶硅栅极4。
其中，第一电极层为阳极层和阴极层中的一者，第二电极层为阳极层和阴极层中的另一者。
一些实施例中，衬底基板1具体可以为晶圆。
显示基板包括显示区域B和绑定区域A，第一金属引线层6位于绑定区域A的部分为绑定引脚7，为了后续与PCB和/或FPC进行绑定，绑定引脚7需要裸露出来。
本实施例中，设置有包围显示基板的显示区域B的封装保护结构14，可以对显示区域周边进行保护，提高封装的可靠性；在形成封装层之后，利用激光烧蚀绑定区域A的光刻胶时，即使激光烧灼后的区域边缘会有光刻胶残留，由于封装保护结构14的存在，也能保证封装的致密性；另外，如果激光烧蚀过的区域边缘处的封装层被影响产生裂纹，由于封装保护结构14的存在，仍能避免水氧入侵显示区域B，保证封装的致密性。
如图7所示，显示面板还包括位于第一封装层17远离衬底基板1一侧的彩膜层18，位于彩膜层18远离衬底基板1一侧的第二封装层19，位于第二封装层19远离衬底基板1一侧的封装盖板20。彩膜层18可以包括多个不同颜色的滤光单元，比如红色滤光单元R、绿色滤光单元G和蓝色滤光单元B， 通过彩膜层18可以实现显示面板出射光线的彩色化，实现彩色显示。
其中，第一封装层17可以采用SiNX、SiO 2、有机物、Al 2O 3中一种或几种的组合，一具体示例中，第一封装层17可以包括依次层叠的SiOx层、有机层和Al 2O 3层。第二封装层19可以采用SiNX、SiO 2、有机物、Al 2O 3中一种或几种的组合，一具体示例中，第二封装层19可以包括依次层叠的SiOx层、有机层和Al 2O 3层。封装盖板20具体可以采用玻璃盖板。
为了保证封装的致密性，封装保护结构14在第一方向上的宽度S可以大于1um，封装保护结构14的厚度可以为0.5-2.5um，其中，第一方向垂直于封装保护结构14的延伸方向且与衬底基板1平行。
封装保护结构14的形状为环状，只要封装保护结构14能够包围显示区域B即可，由于显示区域B一般为矩形，因此，封装保护结构14可以为方形环状，当然，封装保护结构14并不局限为方形环状，还可以为其他形状。
封装保护结构14需要与显示区域B间隔一定距离，一些实施例中，封装保护结构14在衬底基板1上的正投影的内轮廓与显示区域B在衬底基板1上的正投影的外轮廓之间的最短距离d可以大于100um，另外，为了保证显示面板的窄边框，d的值可以小于200um。
由于在蒸镀发光层之前，会在绑定区域A形成光刻胶，封装保护结构14也可以采用光刻胶，这样封装保护结构14可以与绑定区域A的光刻胶通过一次构图工艺同时形成，无需增加额外的构图工艺来专门制作封装保护结构14，能够减少制作显示面板的构图工艺的次数。封装保护结构14可以采用正性光刻胶也可以采用负性光刻胶。
本公开实施例还提供了一种显示面板的制作方法，包括：
提供一显示基板，显示基板包括衬底基板、嵌设在所述衬底基板上的驱动晶体管和位于衬底基板上的第一电极层，所述第一电极层与所述驱动晶体管的第一极连接；
形成包围显示基板的显示区域的封装保护结构以及覆盖显示基板的绑定区域的过渡结构；
形成覆盖显示区域和绑定区域的发光层；
形成覆盖显示区域和绑定区域的第二电极层；
形成覆盖显示区域和绑定区域的第一封装层；
利用激光烧灼过渡结构，过渡结构吸收热量后爆开，暴露出绑定区域。
本实施例中，设置有包围显示基板的显示区域B的封装保护结构14，可以对显示区域周边进行保护，提高封装的可靠性；在形成封装层之后，利用激光烧蚀绑定区域A的光刻胶时，即使激光烧灼后的区域边缘会有光刻胶残留，由于封装保护结构14的存在，也能保证封装的致密性；另外，如果激光烧蚀过的区域边缘处的封装层被影响产生裂纹，由于封装保护结构14的存在，仍能避免水氧入侵显示区域B，保证封装的致密性。
一具体实施例中，显示面板的制作方法包括以下步骤：
步骤1、如图2所示，在衬底基板1上形成多层金属引线，多层金属引线包括第一金属引线层6；
其中，图2为图1在CC方向上的截面示意图，图2中仅示出了距离衬底基板1最远的第一金属引线层6，第一金属引线层6通过导电连接线5与驱动晶体管的源极2、漏极6以及多晶硅栅极4连接，多晶硅栅极4为采用分子束外延处理长出的一层多晶硅，该层可导电，能够作为薄膜晶体管的栅极。
显示面板的第一电极层通过第一金属引线层6与驱动晶体管的第一极连接，第一极可以为驱动晶体管的源极2、漏极6以及多晶硅栅极4。
一些实施例中，衬底基板1具体可以为晶圆。
显示基板包括显示区域B和绑定区域A，第一金属引线层6位于绑定区域A的部分为绑定引脚7，为了后续与PCB和/或FPC进行绑定，绑定引脚7需要裸露出来。
第一金属引线6可以采用导电性能较好的金属制作，厚度一般为300～5000埃，具体可以为350埃。
步骤2、如图2所示，形成覆盖第一金属引线层6的第一子绝缘层111；
第一子绝缘层111可以采用氮化硅、氧化硅或氮氧化硅，厚度为500～5000埃。
步骤3、如图2所示，形成反射图形12；
由于显示面板的阳极图形8可以采用透光材料制作，为了增加出光效率，在显示基板的显示区域B可以形成反射层，反射层包括多个相互独立的反射图形12，反射图形12与显示基板的阳极图形8一一对应，反射图形12在衬底基板1上的正投影与对应的阳极图形8在衬底基板1上的正投影存在重叠区域，反射图形12可以将透过阳极图形8的光线反射至出光侧，增加显示面板的出光效率。反射图形12不参与导电，反射图形12的位置需要避让待形成过孔的区域。
步骤4、如图2所示，形成第二子绝缘层112；
第二子绝缘层112可以采用氮化硅、氧化硅或氮氧化硅，厚度可以根据需要设置，具体可以为1000～15000埃。
步骤5、如图2所示，对绝缘层11进行刻蚀，形成位于绑定区域的过孔10，过孔10暴露出绑定引脚7；
步骤6、如图2所示，在绝缘层11上形成阳极图形8；
具体地，可以在绝缘层11上形成阳极材料层，对阳极材料层进行构图形成位于显示区域B的多个相互独立的阳极图形8，每一阳极图形8通过一导电柱9与第一金属引线层6连接。反射图形12与阳极图形8一一对应，反射图形12在衬底基板1上的正投影的外轮廓可以与对应的阳极图形8在衬底基板1上的正投影的外轮廓重合。
步骤7、如图3所示，在形成有阳极图形8的显示基板上涂覆一层光刻胶，对光刻胶进行曝光显影后形成覆盖绑定区域A的过渡结构13和包围显示区域B的封装保护结构14；
其中，图3为图1在CC方向上的截面示意图，光刻胶可以采用正性光刻胶也可以采用负性光刻胶，光刻胶的厚度可以为0.5～2.5um。
过渡结构13和封装保护结构14可以为一体结构，也可以为分离的。
为了保证封装的致密性，如图1所示，封装保护结构14在第一方向上的宽度S可以大于1um，封装保护结构14的厚度可以为0.5-2.5um，其中，第一方向垂直于封装保护结构14的延伸方向且与衬底基板1平行。封装保护结 构14的形状为环状，只要封装保护结构14能够包围显示区域B即可，由于显示区域B一般为矩形，因此，封装保护结构14可以为方形环状，当然，封装保护结构14并不局限为方形环状。
封装保护结构14需要与显示区域B间隔一定距离，一些实施例中，封装保护结构14在衬底基板1上的正投影的内轮廓与显示区域B在衬底基板1上的正投影的外轮廓之间的最短距离d可以大于100um，另外，为了保证显示面板的窄边框，d的值可以小于200um。
通过一次构图工艺形成过渡结构13和封装保护结构14，能够在不增加工艺制程的前提下，加强加厚封装层，可更好地隔绝水氧，有利于显示装置的封装信赖性及寿命提升。
步骤8、如图4所示，形成发光层15、第二电极层16和第一封装层17；
其中，图4为图1在CC方向上的截面示意图，在形成发光层15时，是整面蒸镀有机发光材料形成发光层15。
第一封装层17覆盖绑定区域A和显示区域B，可以采用SiNX、SiO 2、有机物、Al 2O 3中一种或几种的组合，一具体示例中，第一封装层17可以包括依次层叠的SiOx层、有机层和Al 2O 3层。第一封装层17的厚度可以根据需要设计。
步骤9、如图5所示，形成彩膜层18和第二封装层19；
其中，图5为图1在CC方向上的截面示意图，彩膜层18位于显示区域B，可以包括多个不同颜色的滤光单元，比如红色滤光单元R、绿色滤光单元G和蓝色滤光单元B，通过彩膜层18可以实现显示面板出射光线的彩色化。红色滤光单元R、绿色滤光单元G和蓝色滤光单元B的成膜顺序不做限定。
第二封装层19覆盖绑定区域A和显示区域B，可以采用SiNX、SiO 2、有机物、Al 2O 3中一种或几种的组合，一具体示例中，第二封装层19可以包括依次层叠的SiOx层、有机层和Al 2O 3层。第二封装层19的厚度可以根据需要设计。
步骤10、如图6所示，去除绑定区域A的过渡结构13；
其中，图6为图1在CC方向上的截面示意图，具体地，可以对绑定区 域的过渡结构13进行激光烧蚀，去除绑定区域A上方的过渡结构13及其他膜层，包括第一封装层17和第二封装层19，激光的波长可以为235～550nm，过渡结构13对该波长的激光有很强的吸收性，能够在吸收激光的热量后爆开，暴露出绑定区域的绑定引脚7。
为了保证有效去除绑定区域A的过渡结构13，绑定区域A在衬底基板1上的第一正投影位于激光的光斑内，且第一正投影的外轮廓与光斑的外轮廓之间的最小距离大于5um，这样可以保证激光的光斑覆盖绑定区域A；另外，为了避免激光的光斑对其他区域造成损伤，第一正投影的外轮廓与光斑的外轮廓之间的最小距离小于10um。
步骤11、如图7所示，形成封装盖板20。
其中，封装盖板20可以采用玻璃盖板。
经过上述步骤即可得到显示面板，之后在显示面板上进行FPC和/或PCB的贴附，即可完成显示装置的制作。
本实施例中，在激光烧蚀绑定区域A的过渡结构13时，封装保护结构14可以对显示区域B进行保护，避免激光产生的热量对显示区域造成影响；另外，即使激光烧蚀过的区域边缘处的第一封装层17和第二封装层19被影响产生裂纹，封装保护结构14也可以保护显示区域B，避免水氧入侵显示区域B，保证封装的致密性。
本公开实施例还提供了一种显示装置，包括如上所述的显示面板。
该显示装置包括但不限于：射频单元、网络模块、音频输出单元、输入单元、传感器、显示单元、用户输入单元、接口单元、存储器、处理器、以及电源等部件。本领域技术人员可以理解，上述显示装置的结构并不构成对显示装置的限定，显示装置可以包括上述更多或更少的部件，或者组合某些部件，或者不同的部件布置。在本公开实施例中，显示装置包括但不限于显示器、手机、平板电脑、电视机、可穿戴电子设备、导航显示设备等。
所述显示装置可以为：电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件，其中，所述显示装置还包括柔性电路板、印刷电路板和背板。
在本公开各方法实施例中，所述各步骤的序号并不能用于限定各步骤的先后顺序，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，对各步骤的先后变化也在本公开的保护范围之内。
需要说明，本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于实施例而言，由于其基本相似于产品实施例，所以描述得比较简单，相关之处参见产品实施例的部分说明即可。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (14)

  1. 一种显示面板，其特征在于，包括：
    显示基板，所述显示基板包括衬底基板、嵌设在所述衬底基板上的驱动晶体管和位于所述衬底基板上的第一电极层，所述第一电极层与所述驱动晶体管的第一极连接；
    位于所述显示基板上的封装保护结构，所述封装保护结构包围所述显示基板的显示区域；
    位于所述第一电极层远离所述衬底基板一侧的发光层；
    位于所述发光层远离所述衬底基板一侧的第二电极层；
    位于所述第二电极层远离所述衬底基板一侧的第一封装层。
  2. 根据权利要求1所述的显示面板，其特征在于，所述封装保护结构在第一方向上的宽度大于1um，所述第一方向垂直于所述封装保护结构的延伸方向且与所述衬底基板平行。
  3. 根据权利要求1所述的显示面板，其特征在于，所述封装保护结构在所述衬底基板上的正投影的内轮廓与所述显示区域在所述衬底基板上的正投影的外轮廓之间的最短距离为100-200um。
  4. 根据权利要求1所述的显示面板，其特征在于，所述封装保护结构的厚度为0.5-2.5um。
  5. 根据权利要求1所述的显示面板，其特征在于，所述封装保护结构采用光刻胶。
  6. 根据权利要求1-5中任一项所述的显示面板，其特征在于，还包括：
    位于所述第一封装层远离所述衬底基板一侧的彩膜层；
    位于所述彩膜层远离所述衬底基板一侧的第二封装层；
    位于所述第二封装层远离所述衬底基板一侧的封装盖板。
  7. 一种显示装置，其特征在于，包括如权利要求1-6中任一项所述的显示面板。
  8. 一种显示面板的制作方法，其特征在于，包括：
    提供一显示基板，所述显示基板包括衬底基板、嵌设在所述衬底基板上 的驱动晶体管和位于所述衬底基板上的第一电极层，所述第一电极层与所述驱动晶体管的第一极连接；
    形成包围所述显示基板的显示区域的封装保护结构以及覆盖所述显示基板的绑定区域的过渡结构；
    形成覆盖所述显示区域的发光层；
    形成覆盖所述显示区域的第二电极层；
    形成覆盖所述显示区域和所述绑定区域的第一封装层；
    利用激光烧灼所述过渡结构，所述过渡结构吸收热量后爆开，暴露出所述绑定区域。
  9. 根据权利要求8所述的显示面板的制作方法，其特征在于，形成所述第一封装层之后，利用激光烧灼所述过渡结构之前，所述方法还包括：
    形成覆盖所述显示区域的彩膜层；
    形成覆盖所述显示区域和所述绑定区域的第二封装层。
  10. 根据权利要求8所述的显示面板的制作方法，其特征在于，形成所述封装保护结构和所述过渡结构包括：
    通过一次构图工艺形成所述封装保护结构和所述过渡结构。
  11. 根据权利要求10所述的显示面板的制作方法，其特征在于，所述过渡结构与所述封装保护结构为一体结构。
  12. 根据权利要求8所述的显示面板的制作方法，其特征在于，所述绑定区域在所述衬底基板上的第一正投影位于所述过渡结构在所述衬底基板上的第二正投影内，且所述第一正投影的外轮廓与所述第二正投影的外轮廓之间的最小距离为5～10um。
  13. 根据权利要求8所述的显示面板的制作方法，其特征在于，所述激光的波长为235～550nm。
  14. 根据权利要求8所述的显示面板的制作方法，其特征在于，所述绑定区域在所述衬底基板上的第一正投影位于所述激光的光斑内，且所述第一正投影的外轮廓与所述光斑的外轮廓之间的最小距离为5～10um。
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