WO2021172012A1 - Appareil laser à semi-conducteur - Google Patents

Appareil laser à semi-conducteur Download PDF

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Publication number
WO2021172012A1
WO2021172012A1 PCT/JP2021/004885 JP2021004885W WO2021172012A1 WO 2021172012 A1 WO2021172012 A1 WO 2021172012A1 JP 2021004885 W JP2021004885 W JP 2021004885W WO 2021172012 A1 WO2021172012 A1 WO 2021172012A1
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Prior art keywords
semiconductor laser
electrode
metal
laser device
conductive
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PCT/JP2021/004885
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English (en)
Japanese (ja)
Inventor
菱田　光起
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パナソニックＩｐマネジメント株式会社
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Application filed by パナソニックＩｐマネジメント株式会社 filed Critical パナソニックＩｐマネジメント株式会社
Priority to CN202180010942.6A priority Critical patent/CN115004348A/zh
Priority to JP2022503246A priority patent/JP7386408B2/ja
Priority to DE112021000342.9T priority patent/DE112021000342T5/de
Publication of WO2021172012A1 publication Critical patent/WO2021172012A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

Definitions

  • This disclosure relates to a semiconductor laser device.
  • one of the objects of the present disclosure is to provide a semiconductor laser device having high heat dissipation.
  • the semiconductor laser apparatus is electrically connected to a semiconductor laser element including the first and second electrodes, a conductive portion arranged on the first electrode, and the first electrode via the conductive portion.
  • a semiconductor laser device including the electrode block, wherein the conductive portion fills a space between a plurality of metal members arranged so as to be in contact with the first electrode and the plurality of metal members.
  • the metal member includes an arranged conductive layer, the metal member includes a metal wire portion, a part of the metal wire portion protrudes from the conductive layer, and the part of the metal wire portion faces the electrode block. Includes a curved portion having a convex arcuate shape.
  • a semiconductor laser device having high heat dissipation can be obtained.
  • FIG. 1 is a cross-sectional view schematically showing an example of the semiconductor laser device of the present disclosure.
  • FIG. 2A schematically shows a top view of the conductive portion when viewed from the first electrode block side.
  • FIG. 2B schematically shows a cross-sectional view of the semiconductor laser device and the conductive portion in the line IIB-IIB of FIG. 2A.
  • the semiconductor laser apparatus of the present disclosure is electrically connected to a semiconductor laser element including the first and second electrodes, a conductive portion arranged on the first electrode, and the first electrode via the conductive portion. Includes electrode blocks and. In the following, they will be described.
  • the semiconductor laser element is not particularly limited, and a known semiconductor laser element may be used.
  • the semiconductor laser device may have a plate-like shape as a whole having a first surface and a second surface opposite to the first surface.
  • the semiconductor laser device may have a plate-like shape having a rectangular planar shape.
  • the first electrode may be formed on the first surface, and the second electrode may be formed on the second surface.
  • the semiconductor laser device may have an emission end surface on a side surface connecting the first surface and the second surface.
  • the semiconductor laser element may have a plurality of emission end faces (emission end faces of laser light).
  • the plurality of emission end faces may be arranged on the side surface of the semiconductor laser device so as to be arranged in a line along the longitudinal direction of the side surface.
  • Such semiconductor laser devices have been conventionally proposed, and those known semiconductor laser devices may be used.
  • a semiconductor laser element used for a semiconductor laser called DDL (Direct Diode Laser) may be used.
  • the first and second electrodes may each have a two-dimensionally widened shape.
  • the first and second electrodes may each have a rectangular planar shape.
  • An example semiconductor laser device includes a plurality of resonators arranged in a stripe.
  • the electrode block is a block having conductivity.
  • a block made of metal can be used as the electrode block.
  • An example of an electrode block is a copper block (a block made of copper).
  • the surface of the copper block may be plated with a metal other than copper, for example, nickel and gold may be plated in this order.
  • the electrode block can function as a part of the electrode wiring for passing a current through the first electrode and a part of a member for dissipating heat generated by the semiconductor laser element.
  • the semiconductor laser device usually includes two electrode blocks (first and second electrode blocks).
  • the first electrode block is electrically connected to the first electrode of the semiconductor laser device via the conductive portion.
  • the second electrode block is electrically connected to the second electrode of the semiconductor laser device.
  • the conductive portion includes a plurality of metal members arranged so as to be in contact with the first electrode, and a conductive layer arranged so as to fill the space between the plurality of metal members.
  • the conductive layer is formed so as to be in contact with the first electrode.
  • the metal member includes the metal wire part.
  • a part of the metal wire portion protrudes from the conductive layer.
  • the part protruding from the conductive layer may be referred to as a “protruding portion (P)”.
  • Examples of materials for metal members include gold, copper, aluminum and the like.
  • a preferred example of a material for a metal member is gold.
  • a small amount of additive may be added to the material of the metal member.
  • As the material of the metal member a known material used for wire bonding may be used.
  • the above-mentioned part (protruding portion (P)) of the metal wire portion includes a curved portion having an arcuate shape that is convex toward the electrode block. According to this configuration, the curved portion can receive the electrode block particularly flexibly.
  • the metal member may be formed by using a wire bonder used for wire bonding, as will be described later. Thereby, the metal member including the metal wire portion can be easily formed. Further, by using a wire bonder, a metal wire portion having a shape described later can be easily formed.
  • the protruding part (P) of the metal wire part flexibly receives the electrode block. Further, the height of the metal wire portion can be flexibly adjusted. Therefore, as many protruding portions (P) of the metal wire portions as possible can be brought into contact with the electrode block (or the connecting layer formed on the electrode block). As a result, the contact resistance between the metal member and the electrode block can be reduced, and a good electrical connection between the semiconductor laser device and the electrode block can be realized. Further, the protruding portion (P) flexibly receives the electrode block, so that the stress acting between the semiconductor laser element and the electrode block can be relaxed. As a result, it is possible to suppress physical damage to the semiconductor laser element.
  • a conductive layer is arranged between the first electrode and the electrode block.
  • the conductive layer and the metal member can efficiently transfer the heat generated by the semiconductor laser device to the electrode block. That is, in the semiconductor laser apparatus of the present disclosure, higher heat dissipation can be realized as compared with the case where the heat generated by the semiconductor laser element is transferred to the electrode block only by bumps. Further, as compared with the case where the first electrode and the electrode block are electrically connected only by the bumps, the electric resistance between the first electrode and the electrode block can be reduced by using the conductive layer. It is possible.
  • a semiconductor laser device having high heat dissipation and less physical damage to the semiconductor laser element can be obtained. Further, according to the present disclosure, it is possible to reduce the electrical resistance between the first electrode and the electrode block.
  • the plurality of metal members are arranged at substantially equal intervals.
  • the plurality of metal members may be arranged in a matrix. Rows of metal members including a plurality of metal members arranged at equal intervals may be arranged in stripes at equal intervals.
  • the surface density of the metal member may be in the range of 50 to 1000 pieces / cm 2 (for example, the range of 100 to 300 pieces / cm 2). Within this range, the electrical and physical connections are particularly good.
  • the average (arithmetic mean) height H of the metal member ie, the distance from the surface of the first electrode to the highest portion of the metal wire
  • the average (arithmetic mean) height H of the metal member is in the range of 70 ⁇ m to 300 ⁇ m (eg 150 ⁇ m to 200 ⁇ m). You may. Within this range, the electrical and physical connections are particularly good.
  • the average thickness D of the conductive layer may be in the range of 60 ⁇ m to 250 ⁇ m (for example, 100 ⁇ m to 150 ⁇ m).
  • the average height H ( ⁇ m) of the metal member is in the range of 1.1 to 2.0 times (for example, the range of 1.2 to 1.5 times) the average thickness D ( ⁇ m) of the conductive layer. You may. Within this range, the metal wire portion protruding from the conductive layer can receive the electrode block particularly flexibly.
  • the volume and area of the portion where the conductive layer is formed also includes the volume and area of the metal member existing in the portion.
  • the metal wire portion may have an arch-like shape that is convex toward the electrode block.
  • An example metal member may include first and second bases that come into contact with the first electrode. The two ends of the metal wire portion may be connected to the first and second bases, respectively.
  • the metal wire portion may be an arch-shaped wire whose both ends are connected to the first base portion and the second base portion, respectively.
  • the first and second bases may have a hemispherical or columnar shape, respectively.
  • the conductive layer may contain metal particles. By using the metal particles, the thermal conductivity and the electrical conductivity of the conductive layer can be enhanced.
  • a conductive layer may be formed of a metal paste (paste containing metal particles), for example, a gold paste (paste containing gold particles) or a silver paste (paste containing silver particles). ..
  • a metal paste a known metal paste used in the manufacture of semiconductor devices may be used.
  • the semiconductor laser device 100 includes a semiconductor laser element 110, a first electrode block (upper electrode block) 121, a second electrode block 122, a submount 123, an insulating layer 124, and a conductive portion 130.
  • the semiconductor laser element 110 may have a plurality of emission end faces.
  • the plurality of emission end faces may be arranged in a row along the longitudinal direction of the side wall of the semiconductor laser device 110.
  • the semiconductor laser element 110 includes a first electrode 111 (see FIG. 2B) provided on a portion facing the conductive portion 130 and a second electrode (not shown) provided on a portion facing the submount 123. including.
  • the first electrode 111 is electrically connected to the first electrode block 121 via the conductive portion 130.
  • the second electrode is electrically connected to the second electrode block 122 via the submount 123.
  • the first and second electrode blocks 121 and 122 are connected to a power source (not shown) for injecting current into the semiconductor laser device 110. This power source injects a current into the active layer of the semiconductor laser device 110.
  • the submount 123 is made of a material having high conductivity and thermal conductivity.
  • the coefficient of thermal expansion of the submount 123 is preferably close to the coefficient of thermal expansion of the semiconductor laser device 110.
  • the submount is not particularly limited, and a known submount used in a semiconductor laser device may be applied.
  • the submount 123 may be made of a copper tungsten alloy or a copper molybdenum alloy.
  • a conductive connection layer for connecting the second electrode block 122 and the sub-mount 123 may be arranged.
  • the connecting layer may be, for example, a solder layer, a plating layer, a metal foil layer, or the like (the same applies to the connecting layer described below).
  • a connection layer for connecting the submount 123 and the semiconductor laser element 110 may be arranged, and they are connected between the conductive portion 130 and the first electrode block 121.
  • a connection layer may be arranged for this purpose.
  • the insulating layer 124 insulates the first electrode block 121 and the second electrode block 122.
  • the insulating layer 124 is made of a material having an insulating property.
  • the insulating layer 124 may be formed of an inorganic insulating material (for example, ceramics such as aluminum nitride) and / or an organic insulating material (for example, an insulating resin such as polyimide).
  • the insulating layer 124 of one example may contain polyimide, aluminum nitride, or the like.
  • FIG. 2A schematically shows a top view of the conductive portion 130 when viewed from the first electrode block 121 side. Further, a cross-sectional view of the semiconductor laser element 110 and the conductive portion 130 in the line IIB-IIB of FIG. 2A is schematically shown in FIG. 2B.
  • the conductive portion 130 includes a plurality of metal members 131 and a conductive layer 132 arranged so as to fill the space between the plurality of metal members 131.
  • the plurality of metal members 131 and the conductive layer 132 are arranged so as to be in contact with the first electrode 111 of the semiconductor laser element 110, respectively.
  • a plurality of metal members 131 are arranged in a matrix. From another point of view, the plurality of metal members 131 are arranged at the positions of the grid points.
  • the metal member 131 includes a bump-shaped first base portion 131a in contact with the first electrode 111 and a metal wire portion 131b extending from the first base portion 131a.
  • both ends of the metal wire portion 131b are connected to the bump-shaped first base portion 131a and the bump-shaped second base portion 131c, respectively.
  • the metal wire portion 131b has an arched shape.
  • the base portion 131c may not be in contact with the electrode 111, but even in that case, the metal wire portion 131b has an arch-like shape as described above.
  • the protruding portion 131bp (protruding portion (P)), which is a part of the metal wire portion 131b, protrudes from the conductive layer 132.
  • the protruding portion 131bp includes a curved portion having an arcuate shape that is convex toward the first electrode block 121. At least the upper part of the curved portion is in physical contact with the first electrode block 121 (or the connecting layer formed on the first electrode block). That is, the first electrode 111 and the first electrode block 121 are electrically connected at least via the upper part of the curved portion.
  • the conductive layer 132 is arranged so as to cover the portion of the surface of the first electrode 111 that is not covered by the metal member 131.
  • the conductive layer 132 contains metal fine particles. A part of the material constituting the conductive layer 132 may be attached to the protruding portion 131bp of the metal wire portion 131b, but the material attached to the protruding portion 131bp does not form a layer and is therefore conductive. Not included in layer 132.
  • the first electrode block 121 (or the connecting layer) is electrically received by the elastic metal wire portion 131b (specifically, the protruding portion 131bp including the curved portion). Form a connection. Therefore, even if the shapes and heights of the plurality of metal members 131 vary, it is possible to form an electrical connection uniformly and stably. Further, the stress applied between the semiconductor laser element 110 and the first electrode block 121 can be relaxed by the metal wire portion 131b. Further, in the semiconductor laser apparatus 100, the conductive layer 132 improves the conductivity and thermal conductivity of the conductive portion 130. Therefore, the semiconductor laser device 100 has high heat dissipation, and there is little physical damage to the semiconductor laser element 110. Further, in the semiconductor laser apparatus 100, the loss due to the electric resistance between the semiconductor laser element 110 and the first electrode block 121 is small.
  • a metal member 131 is formed on the first electrode 111 by using a wire bonder. Specifically, a ball-shaped portion formed at the tip of the gold wire is connected on the first electrode 111 to form the first base portion 131a by a ball bonding method using a wire bonder. Next, the gold wire (metal wire portion 131b) is extended to a certain length. After that, the wire bonder is operated to form the gold wire in an arch shape so that the arch-shaped metal wire portion 131b shown in FIG. 2B is formed, and when the gold wire is pressed onto the electrode 111, a high current is applied to cut the gold wire. do. In this way, the metal member 131 including the arch-shaped metal wire portion 131b is formed.
  • the conductive layer 132 is formed.
  • a metal paste for example, silver paste
  • the metal paste is applied so as to fill the space between the plurality of metal members 131.
  • the metal paste may be applied so that a part of the metal member 131 is exposed, or the metal paste may be applied so that the entire metal member 131 is completely covered.
  • a part of the metal member 131 protruding portion 131bp
  • the surface of the metal paste may be flattened if necessary.
  • the surface of the metal paste may be flattened with a non-woven fabric or the like. After applying the metal paste so that the entire metal member 131 is completely covered, a part of the metal member 131 may be exposed from the layer of the metal paste when the surface of the metal paste is flattened.
  • the metal paste is heated (baked) to form the conductive layer 132.
  • the heating conditions can be selected according to the metal paste.
  • the heating may be divided into a plurality of times. For example, after applying the metal paste, heating (temporary firing) may be performed at a relatively low temperature, and after assembling the semiconductor laser device 100, heating may be performed at a high temperature.
  • the conductive portion 130 can be formed at any stage at which the conductive portion 130 can be formed.
  • the conductive portion 130 may be formed before joining the submount 123 on which the semiconductor laser element 110 is mounted to the second electrode block 122, or may be formed after joining.
  • the semiconductor laser device 100 can be assembled by a known method. For example, first, the insulating layer 124 is formed on the second electrode block 122. Further, the submount 123 on which the semiconductor laser element 110 is mounted is joined to the second electrode block 122. A conductive portion 130 is formed on the first electrode 111 of the semiconductor laser element 110. Next, the first electrode block 121 is placed on the insulating layer 124 and the conductive portion 130. As described above, a connecting layer may be arranged between the conductive portion 130 and the first electrode block 121. In that case, the connecting layer is formed on the first electrode block 121.
  • the semiconductor laser device 100 can be manufactured.
  • the manufacturing method described above is an example, and the semiconductor laser device of the present disclosure can be manufactured by any method.
  • This disclosure can be used for semiconductor laser devices.
  • Semiconductor laser device 110 Semiconductor laser element 111: First electrode 130: Conductive portion 131: Metal member 131a: First base portion 131b: Metal wire portion 131bp: Protruding portion (part of metal wire portion, curved portion) 131c: Second base 132: Conductive layer

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
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  • Semiconductor Lasers (AREA)

Abstract

Un appareil laser à semi-conducteur selon l'invention comprend : un élément laser à semi-conducteur (110) comprenant une première électrode (111) et une seconde électrode ; une partie conductrice (130) disposée sur la première électrode (111) ; et un bloc d'électrode connecté électriquement à l'élément de couche semi-conductrice (110) par l'intermédiaire de la partie conductrice (130). La partie conductrice (130) comprend une pluralité d'éléments métalliques (131) agencés pour être en contact avec la première électrode (111), et une couche conductrice (132) disposée pour remplir un espace entre la pluralité d'éléments métalliques (131). Les éléments métalliques (131) comprennent chacun une partie de fil métallique (131b). Une partie de la partie de fil métallique (131b) fait saillie à partir de la couche conductrice (132). La partie de la partie de fil métallique (131b) comprend une partie incurvée ayant une forme arquée qui est convexe vers le bloc d'électrode.
PCT/JP2021/004885 2020-02-27 2021-02-10 Appareil laser à semi-conducteur WO2021172012A1 (fr)

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Citations (10)

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JPH10303242A (ja) * 1997-04-24 1998-11-13 Kyocera Corp 突出接点ならびに突出接点形成方法
US20030234451A1 (en) * 2002-06-25 2003-12-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
US20050133928A1 (en) * 2003-12-19 2005-06-23 Howard Gregory E. Wire loop grid array package
US20090026605A1 (en) * 2007-07-26 2009-01-29 Texas Instruments Incorporated Heat Extraction from Packaged Semiconductor Chips, Scalable with Chip Area
JP2011216822A (ja) * 2010-04-02 2011-10-27 Hitachi Ltd パワー半導体モジュール
JP2014209614A (ja) * 2013-03-29 2014-11-06 株式会社フジクラ 電子部品用放熱装置
JP2015138824A (ja) * 2014-01-21 2015-07-30 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法、並びに半導体装置を利用したパワーエレクトロニクスシステム
WO2016103536A1 (fr) * 2014-12-26 2016-06-30 パナソニックＩｐマネジメント株式会社 Dispositif à semi-conducteur
US20170301606A1 (en) * 2016-04-19 2017-10-19 Hyundai Mobis Co., Ltd. Bidirectional semiconductor package
WO2021044698A1 (fr) * 2019-09-06 2021-03-11 パナソニックＩｐマネジメント株式会社 Dispositif laser à semi-conducteur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019009172A1 (fr) 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 Dispositif laser à semi-conducteur

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303242A (ja) * 1997-04-24 1998-11-13 Kyocera Corp 突出接点ならびに突出接点形成方法
US20030234451A1 (en) * 2002-06-25 2003-12-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
US20050133928A1 (en) * 2003-12-19 2005-06-23 Howard Gregory E. Wire loop grid array package
US20090026605A1 (en) * 2007-07-26 2009-01-29 Texas Instruments Incorporated Heat Extraction from Packaged Semiconductor Chips, Scalable with Chip Area
JP2011216822A (ja) * 2010-04-02 2011-10-27 Hitachi Ltd パワー半導体モジュール
JP2014209614A (ja) * 2013-03-29 2014-11-06 株式会社フジクラ 電子部品用放熱装置
JP2015138824A (ja) * 2014-01-21 2015-07-30 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法、並びに半導体装置を利用したパワーエレクトロニクスシステム
WO2016103536A1 (fr) * 2014-12-26 2016-06-30 パナソニックＩｐマネジメント株式会社 Dispositif à semi-conducteur
US20170301606A1 (en) * 2016-04-19 2017-10-19 Hyundai Mobis Co., Ltd. Bidirectional semiconductor package
WO2021044698A1 (fr) * 2019-09-06 2021-03-11 パナソニックＩｐマネジメント株式会社 Dispositif laser à semi-conducteur

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JPWO2021172012A1 (fr) 2021-09-02
JP7386408B2 (ja) 2023-11-27
CN115004348A (zh) 2022-09-02
DE112021000342T5 (de) 2022-09-22

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